[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

WO2021049845A3 - 오버레이 측정장치 - Google Patents

오버레이 측정장치 Download PDF

Info

Publication number
WO2021049845A3
WO2021049845A3 PCT/KR2020/012096 KR2020012096W WO2021049845A3 WO 2021049845 A3 WO2021049845 A3 WO 2021049845A3 KR 2020012096 W KR2020012096 W KR 2020012096W WO 2021049845 A3 WO2021049845 A3 WO 2021049845A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
overlay
measurement device
light source
objective lens
Prior art date
Application number
PCT/KR2020/012096
Other languages
English (en)
French (fr)
Other versions
WO2021049845A2 (ko
Inventor
박규남
신현기
이성수
Original Assignee
(주)오로스 테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)오로스 테크놀로지 filed Critical (주)오로스 테크놀로지
Priority to JP2022515113A priority Critical patent/JP7280434B2/ja
Priority to CN202080063499.4A priority patent/CN114424019A/zh
Priority to US17/641,602 priority patent/US12085383B2/en
Publication of WO2021049845A2 publication Critical patent/WO2021049845A2/ko
Publication of WO2021049845A3 publication Critical patent/WO2021049845A3/ko

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

본 발명은 오버레이 측정장치에 관한 것이다. 더욱 상세하게는 서로 다른 파장의 광원을 사용하는 자동 초점(Auto focus) 시스템을 구비한 오버레이 측정장치에 관한 것이다. 본 발명은 웨이퍼에 형성된 서로 다른 층들에 각각 형성된 제1 오버레이 마크와 제2 오버레이 마크 사이의 오차를 측정하는 장치로서, 제1 빔을 조사하는 제1 광원과; 상기 제1 광원으로부터 나와서 상기 웨이퍼의 측정위치에서 반사된 상기 제1 빔에 의한 신호를 획득하는 제1 검출기와; 상기 제1 빔과 파장이 다른 제2 빔을 조사하는 제2 광원과; 상기 제2 광원으로부터 나와서 상기 웨이퍼의 상기 측정위치에서 반사된 상기 제2 빔에 의한 신호를 획득하는 제2 검출기와; 상기 제1 빔과 상기 제2 빔을 상기 웨이퍼의 상기 측정위치에 집광시키고, 상기 측정위치에서 반사된 빔을 수집하는 대물렌즈와; 상기 웨이퍼에 대한 상기 대물렌즈의 광축 방향의 상대 위치를 조절하는 액추에이터와; 상기 액추에이터를 제어하는 제어수단과; 상기 웨이퍼에 대한 상기 대물렌즈의 상기 광축 방향의 상대 위치의 변화에 따른 상기 제1 검출기의 신호의 변화를 기초로 상기 제1 오버레이 마크의 높이를 검출하고, 상기 웨이퍼에 대한 상기 대물렌즈의 상기 광축 방향의 상대 위치의 변화에 따른 상기 제2 검출기의 신호의 변화를 기초로 상기 제2 오버레이 마크의 높이를 검출하는 높이 검출수단을 포함하는 오버레이 측정장치를 제공한다.
PCT/KR2020/012096 2019-09-10 2020-09-08 오버레이 측정장치 WO2021049845A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2022515113A JP7280434B2 (ja) 2019-09-10 2020-09-08 オーバーレイ測定装置
CN202080063499.4A CN114424019A (zh) 2019-09-10 2020-09-08 套刻测量装置
US17/641,602 US12085383B2 (en) 2019-09-10 2020-09-08 Overlay measurement device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0111950 2019-09-10
KR1020190111950A KR102273278B1 (ko) 2019-09-10 2019-09-10 오버레이 측정장치

Publications (2)

Publication Number Publication Date
WO2021049845A2 WO2021049845A2 (ko) 2021-03-18
WO2021049845A3 true WO2021049845A3 (ko) 2021-06-10

Family

ID=74870010

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2020/012096 WO2021049845A2 (ko) 2019-09-10 2020-09-08 오버레이 측정장치

Country Status (5)

Country Link
US (1) US12085383B2 (ko)
JP (1) JP7280434B2 (ko)
KR (1) KR102273278B1 (ko)
CN (1) CN114424019A (ko)
WO (1) WO2021049845A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113985711B (zh) * 2021-10-28 2024-02-02 无锡卓海科技股份有限公司 一种套刻测量装置
KR102524462B1 (ko) * 2022-03-28 2023-04-21 (주)오로스 테크놀로지 오버레이 측정장치
KR102526522B1 (ko) 2022-11-02 2023-04-27 (주)오로스테크놀로지 포커스를 제어하는 오버레이 계측 장치 및 방법과 이를 위한 프로그램
KR102576639B1 (ko) * 2022-11-09 2023-09-08 (주)오로스테크놀로지 초점 이동을 제어하는 오버레이 계측 장치 및 방법과 이를 위한 프로그램 저장 매체
KR102550408B1 (ko) * 2023-02-14 2023-07-03 (주)오로스 테크놀로지 오버레이 측정장치 및 방법
US20240280914A1 (en) * 2023-02-16 2024-08-22 Kla Corporation Scanning overlay metrology with high signal to noise ratio
KR20240146271A (ko) * 2023-03-29 2024-10-08 (주) 오로스테크놀로지 파장 가변형 광섬유 광원 및 이를 구비한 오버레이 측정 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306602A (ja) * 1995-04-27 1996-11-22 Nikon Corp アライメント装置
JPH10122820A (ja) * 1996-10-16 1998-05-15 Nikon Corp パターン間寸法測定装置及び方法
JP2002196223A (ja) * 2000-12-26 2002-07-12 Nikon Corp 光学的位置ずれ検出装置
JP2012094915A (ja) * 2002-09-20 2012-05-17 Asml Netherlands Bv リソグラフィ装置の位置決めシステムおよび方法
KR20130101458A (ko) * 2012-03-05 2013-09-13 캐논 가부시끼가이샤 검출 장치, 노광 장치, 및 디바이스 제조 방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348104A (ja) * 1989-07-17 1991-03-01 Nippon Telegr & Teleph Corp <Ntt> 重ね合せ偏差測定方法およびその測定装置
JPH07190735A (ja) * 1993-12-27 1995-07-28 Tosok Corp 光学式測定装置およびその測定方法
KR100417212B1 (ko) 2001-12-26 2004-02-05 동부전자 주식회사 오버레이 측정 장치 및 이를 이용한 오버레이 측정 방법
US7230703B2 (en) * 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
EP1755152B1 (en) * 2004-04-23 2016-02-24 Nikon Corporation Measuring method, measuring equipment, exposing method and exposing equipment
KR100689816B1 (ko) * 2004-11-03 2007-03-08 삼성전자주식회사 노광장치 및 레티클 정렬상태 측정방법
JP4883751B2 (ja) * 2005-06-17 2012-02-22 レーザーテック株式会社 ３次元形状測定装置及び３次元形状測定方法
KR100689709B1 (ko) 2005-08-10 2007-03-08 삼성전자주식회사 반도체 디바이스 제조를 위한 오버레이 마크 및 이를이용한 오버레이 측정방법
US8432541B2 (en) * 2007-12-17 2013-04-30 Accuri Cytometers, Inc. Optical system for a flow cytometer with an interrogation zone
JP2010164832A (ja) * 2009-01-16 2010-07-29 Sony Corp 光照射装置、光照射方法
CN105446082B (zh) * 2014-08-20 2018-03-02 上海微电子装备（集团）股份有限公司 套刻误差测量装置及方法
CN105807573B (zh) * 2014-12-31 2017-12-29 上海微电子装备（集团）股份有限公司 用于套刻误差检测的装置和方法
KR101564312B1 (ko) 2015-07-07 2015-10-29 (주)오로스 테크놀로지 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법
JP6489999B2 (ja) * 2015-11-19 2019-03-27 東芝メモリ株式会社 位置合わせ方法およびパターン形成システム
CN109690234B (zh) * 2016-09-15 2021-09-14 科磊股份有限公司 用于优化以成像为基础的覆盖度量的聚焦的系统及方法
JP6900702B2 (ja) * 2017-02-24 2021-07-07 株式会社リコー 計測装置および計測方法
US10572990B2 (en) * 2017-04-07 2020-02-25 Nuflare Technology, Inc. Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image, pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system
EP3470923A1 (en) * 2017-10-10 2019-04-17 ASML Netherlands B.V. Metrology method
KR101906098B1 (ko) * 2018-01-12 2018-10-10 (주)오로스 테크놀로지 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법
KR102120551B1 (ko) * 2018-09-14 2020-06-09 (주)오로스 테크놀로지 오버레이 측정장치
KR102524462B1 (ko) * 2022-03-28 2023-04-21 (주)오로스 테크놀로지 오버레이 측정장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306602A (ja) * 1995-04-27 1996-11-22 Nikon Corp アライメント装置
JPH10122820A (ja) * 1996-10-16 1998-05-15 Nikon Corp パターン間寸法測定装置及び方法
JP2002196223A (ja) * 2000-12-26 2002-07-12 Nikon Corp 光学的位置ずれ検出装置
JP2012094915A (ja) * 2002-09-20 2012-05-17 Asml Netherlands Bv リソグラフィ装置の位置決めシステムおよび方法
KR20130101458A (ko) * 2012-03-05 2013-09-13 캐논 가부시끼가이샤 검출 장치, 노광 장치, 및 디바이스 제조 방법

Also Published As

Publication number Publication date
US20220326008A1 (en) 2022-10-13
WO2021049845A2 (ko) 2021-03-18
JP2023500556A (ja) 2023-01-10
US12085383B2 (en) 2024-09-10
JP7280434B2 (ja) 2023-05-23
KR20210031015A (ko) 2021-03-19
CN114424019A (zh) 2022-04-29
KR102273278B1 (ko) 2021-07-07

Similar Documents

Publication Publication Date Title
WO2021049845A3 (ko) 오버레이 측정장치
JP6044315B2 (ja) 変位計測方法および変位計測装置
US7123345B2 (en) Automatic focusing apparatus
JP2020016898A (ja) アライメントシステム
TWI398717B (zh) 自動對焦控制單元、電子裝置及自動對焦控制方法
KR102077064B1 (ko) 자동초점 제어장치, 반도체 검사장치 및 현미경
US9025243B2 (en) Microscope apparatus
JP2009034723A5 (ko)
US8772688B2 (en) Autofocus device including line image forming unit and rotation unit that rotates line image
TWI644749B (zh) 雷射加工裝置以及雷射加工方法
US5742397A (en) Control device of the position and slope of a target
US10656507B2 (en) Focusing and leveling measurement device and method
WO2019031328A1 (ja) 光学装置
US7462805B2 (en) Focus detection apparatus having a luminous flux deformation member
US8441652B2 (en) Profile measuring apparatus, method for measuring profile, and method for manufacturing product
US10634895B2 (en) Microscope apparatus, automatic focusing device, and automatic focusing method
US11016279B2 (en) Observation device
US9945656B2 (en) Multi-function spectroscopic device
US20230184546A1 (en) Apparatus and method for measuring overlay
JP2005198851A (ja) 干渉式眼計測装置
US20240155211A1 (en) Image acquisition method and device
US20220350110A1 (en) Focus system and method for operating a focus system
KR20190111717A (ko) 광학식 높이 계측용 광모듈
JPH1164719A (ja) 焦点検出手段を備えた顕微鏡および変位計測装置
JPH1123953A (ja) 焦点検出装置を備えた顕微鏡および変位計測装置

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2022515113

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20864066

Country of ref document: EP

Kind code of ref document: A2