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WO2019105102A1 - 触控面板、触控设备和制造触控面板的方法 - Google Patents

触控面板、触控设备和制造触控面板的方法 Download PDF

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Publication number
WO2019105102A1
WO2019105102A1 PCT/CN2018/105746 CN2018105746W WO2019105102A1 WO 2019105102 A1 WO2019105102 A1 WO 2019105102A1 CN 2018105746 W CN2018105746 W CN 2018105746W WO 2019105102 A1 WO2019105102 A1 WO 2019105102A1
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WO
WIPO (PCT)
Prior art keywords
touch
shift register
register circuit
electrode
touch panel
Prior art date
Application number
PCT/CN2018/105746
Other languages
English (en)
French (fr)
Inventor
史世明
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/336,194 priority Critical patent/US10761652B2/en
Priority to EP18857438.8A priority patent/EP3719621B1/en
Publication of WO2019105102A1 publication Critical patent/WO2019105102A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • Embodiments of the present disclosure relate to a touch panel, a touch device having the touch panel, and a method of manufacturing the touch panel.
  • the touch screen provides a simple and convenient way of human-computer interaction by replacing the mechanical button panel with a tactile feedback system.
  • the touch screen includes capacitive, resistive, infrared and surface acoustic wave types.
  • Capacitive touch screen works by the current sensing phenomenon of the human body, supports multi-touch, and has the advantages of wear resistance, long life, low power consumption, etc., so it has been developed rapidly and has been widely applied to mobile phones, tablets, notebooks. Computers, televisions, monitors, digital photo frames, navigators and other electronic products.
  • At least one embodiment of the present disclosure provides a touch panel including: a substrate; a touch structure, the touch structure includes: a touch scan electrode disposed on the substrate in a first direction; Controlling the sensing electrode, disposed on the substrate in a second direction, wherein the first direction intersects the second direction; a touch shift register circuit disposed on the substrate and associated with The touch scan electrodes are electrically connected to be configured to provide a touch scan signal to the touch scan electrodes.
  • the touch scan electrode includes a plurality of first electrode portions and a plurality of second electrode portions, and the first electrode portion is located at the touch sensing electrode In the same layer, the second electrode portion is located at different layers and constitutes a bridge portion connecting the adjacent first electrode portions, such that the touch scan electrode passes over the touch sensing electrode that intersects the touch scan electrode.
  • the touch shift register circuit includes at least one thin film transistor, and a source and a drain of the thin film transistor are located at a first portion of the touch scan electrode.
  • the gate of the thin film transistor is in the same layer as the second electrode portion of the touch scan electrode.
  • the first electrode portion is farther away from the base substrate than the second electrode portion.
  • a touch panel provided in an embodiment of the present disclosure includes a display structure, wherein the display structure and the touch structure are stacked in a direction perpendicular to a surface of the touch panel.
  • the display structure and the touch structure are disposed on the same side of the base substrate, and the touch structure is more than the display structure. Keep away from the substrate.
  • a touch panel provided in an embodiment of the present disclosure includes a thin film encapsulation layer, wherein the thin film encapsulation layer is disposed on the display structure, and the touch control structure is disposed on the thin film encapsulation layer.
  • the touch shift register circuit is disposed on the thin film encapsulation layer.
  • the display structure includes an array substrate, the array substrate serves as the base substrate, and the touch shift register circuit is disposed on the array substrate.
  • the thin film encapsulation layer has a via hole, and the touch shift register circuit is covered by the thin film encapsulation layer and passes through the thin film encapsulation layer.
  • the hole is electrically connected to the touch scan electrode.
  • the display structure further includes a display shift register circuit, and the touch shift register circuit and the display shift register circuit are juxtaposed on the array substrate on.
  • the display structure further includes a common electrode line, and the common electrode line is disposed on the array substrate.
  • the touch panel provided in an embodiment of the present disclosure further includes a first shift register circuit
  • the display structure further includes a display shift register circuit
  • the first shift register circuit includes the touch shift a bit register circuit and the display shift register circuit
  • the array substrate is provided with a touch scan connection line
  • the thin film encapsulation layer has a via hole
  • the touch shift register circuit passes the touch scan scan line
  • a via hole in the thin film encapsulation layer is electrically connected to the touch scan electrode.
  • the display structure includes a cover plate, the cover plate serves as the base substrate, and the display structure and the touch structure are disposed on the cover plate. On both sides.
  • the display structure includes an electroluminescent display array.
  • At least one embodiment of the present disclosure further provides a touch device, including the touch panel of any of the embodiments of the present disclosure.
  • At least one embodiment of the present disclosure further provides a method for manufacturing a touch panel, comprising: forming a touch shift register circuit and a touch structure on a base substrate; wherein the touch structure includes a touch scan electrode and a touch Controlling the sensing electrode, the touch scanning electrode is disposed on the substrate in a first direction, the touch sensing electrode is disposed on the substrate in a second direction, the first direction and the The second direction intersects, and the touch shift register circuit is electrically connected to the touch scan electrode.
  • FIG. 1 is a schematic plan view of a touch panel according to an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of a touch scan shift register circuit of a touch panel according to an embodiment of the present disclosure
  • FIG. 3 is a timing diagram of a signal of a touch scan shift register circuit of a touch panel according to an embodiment of the present disclosure
  • FIG. 4 is a sub-circuit structure diagram of a touch scan shift register circuit of a touch panel according to an embodiment of the present disclosure
  • FIG. 5 is a cross-sectional view of a touch panel according to an embodiment of the present disclosure.
  • FIG. 6 is a cross-sectional view of another touch panel according to an embodiment of the present disclosure.
  • FIG. 7 is a cross-sectional view of another touch panel according to an embodiment of the present disclosure.
  • FIG. 8 is a cross-sectional view of another touch panel according to an embodiment of the present disclosure.
  • FIG. 9 is a cross-sectional view of another touch panel according to an embodiment of the present disclosure.
  • FIG. 10A is a structural diagram of a 2T1C pixel circuit of a touch panel according to an embodiment of the present disclosure
  • FIG. 10B is a structural diagram of a 2T1C pixel circuit of another touch panel according to an embodiment of the present disclosure.
  • FIG. 11 is a schematic diagram of the appearance of a touch device according to an embodiment of the present disclosure.
  • Capacitive touch screens include self-capacitive touch screens and mutual capacitive touch screens.
  • the mutual capacitive touch screen generally includes two sets of electrodes, which are a touch scan electrode and a touch sensing electrode.
  • the two sets of electrodes are alternately disposed on the base substrate to form a capacitance at a position where the two intersect each other.
  • the touch driver provides a scan signal to the touch scan electrode through the touch shift register circuit, and then detects the change of the capacitance value by detecting the sensing signal received by the touch sensing electrode, thereby determining the touch position. Since the number of touch scan electrodes is large, there are many leads between the touch driver and the touch panel, the leads are affected by the side signal interference load, and the lengths of the leads are different, resulting in different loads, thereby interfering with the detection signal and affecting the detection accuracy. This setting has higher requirements for the drive signal.
  • At least one embodiment of the present disclosure provides a touch panel, a touch device having the touch panel, and a method of manufacturing the touch panel.
  • the touch panel is formed on the base substrate provided with the touch structure by the touch shift register circuit, thereby shortening the length of the lead between the touch shift register and the touch scan electrode, and reducing the touch driver.
  • the number of leads between the touch panel and the touch panel can solve the problem that the lead is affected by the side signal interference and the load is increased and the lead length is different, which can improve the detection accuracy and reduce the requirement for the driving signal.
  • the touch panel of at least one embodiment can also reduce the influence on the bezel design, and is advantageous for implementing touch and display drive integration and narrow bezel design.
  • At least one embodiment of the present disclosure provides a touch panel including a base substrate, a touch structure, and a touch shift register circuit.
  • the touch sensing structure includes a touch scan electrode and a touch sensing electrode, wherein the touch scan electrode is disposed on the base substrate along a first direction, and the touch sensing electrode is disposed on the lining along a second direction On the base substrate, the first direction intersects the second direction.
  • the touch shift register circuit is disposed on the base substrate and electrically connected to the touch scan electrode, and is configured to provide a touch scan signal to the touch scan electrode.
  • FIG. 1 is a schematic plan view of a touch panel according to an embodiment of the present disclosure.
  • the touch panel 001 includes a touch scan electrode 004 , a touch sensing electrode 005 , and a touch shift register circuit 210 disposed on a base substrate.
  • the touch scan electrode 004 and the touch sensing electrode 005 are insulated from each other and disposed in the touch effective area 002.
  • the touch scan electrode 004 is disposed along a first direction (lateral direction in the drawing), and the touch sensing electrode 005 is disposed along a second direction (longitudinal direction in the drawing) crossing the first direction, for example, the first direction and the second direction are mutually
  • the vertical that is, the angle between the first direction and the second direction is 90 degrees, and embodiments of the present disclosure are not limited thereto.
  • the touch scan electrode 004 includes a plurality of first electrode portions 0041 and a plurality of second electrode portions 0042, and the touch sensing electrodes 005 are continuously extended.
  • the first electrode portion 0041 is located on the same layer as the touch sensing electrode 005.
  • the second electrode portion 0042 is located at a different layer (which may be in a layer closer to the substrate of the substrate or further away from the substrate) and constitutes a bridging portion connecting the adjacent first electrode portions 0041 to allow the touch scan electrode 004 to pass over
  • the touch sensing electrode 005 intersects with it.
  • the touch scan electrode 004 and the touch sensing electrode 005 are not limited to the diamond-shaped block structure in the figure, and may be other structural forms, such as a rectangle, a triangle, a circle, and the like.
  • the touch sensing electrodes 005 and the touch scan electrodes 004 are located in different layers, thereby achieving mutual crossing and insulation, thereby eliminating the need for bridging portions, which is simple in manufacturing process and easy to implement.
  • the touch scan electrode 004 is continuously extended
  • the touch sensing electrode 005 may include a first electrode portion and a second electrode portion
  • the second electrode portion constitutes a bridge portion to enable touch sensing.
  • the electrode 005 passes over the touch scan electrode 004 that intersects therewith.
  • the first direction and the second direction may be any direction, and the angle between the first direction and the second direction is not limited to 90 degrees.
  • the touch shift register circuit 210 is directly disposed on the base substrate and located in a peripheral area outside the touch effective area 002.
  • the touch shift register circuit 210 includes a plurality of cascaded sub-circuits (shift register units) SRn (where n ⁇ 1), and the plurality of sub-circuits SRn and the plurality of touch scan electrodes 004 disposed in parallel with each other Correspondingly and electrically connected to provide a touch scan signal TXn (where n ⁇ 1) to the plurality of touch scan electrodes 004 during operation, for example, the touch scan signal TXn is provided in a progressive scan manner.
  • shift register units shift register units
  • the structure of the touch shift register circuit 210 is not limited, and may include a plurality of thin film transistors or field effect transistors or other devices having the same characteristics, and may be other suitable structural forms.
  • the thin film transistor may be an oxide thin film transistor, or may be another type of transistor such as an amorphous silicon thin film transistor, a polysilicon thin film transistor, or the like.
  • the position of the touch shift register circuit 210 on the touch panel 001 is not limited and can be determined according to actual needs.
  • the touch driver 003 can be disposed outside the touch panel 001, and can be electrically connected to the touch shift register circuit 210 and the touch sensing electrode 005, for example, by a flexible printed circuit board or the like.
  • the touch driver 003 is configured to control the touch panel 001 to perform touch detection, for example, providing a shift trigger signal SR_IN to the touch shift register circuit 210, and collecting a plurality of sensing signals RXm of the touch sensing electrode 005 (where m ⁇ 1).
  • the touch driver 003 may further include a processing circuit for determining coordinates of the touch position in the touch effective area 002 according to the sensing signal RXm.
  • the structure of the touch driver 003 is not limited, and may be a dedicated or general-purpose chip, or may be a dedicated drive circuit or a dedicated drive device or other suitable structure.
  • the length of the lead between the touch shift register circuit 210 and the touch scan electrode 004 can be shortened, and the touch driver 003 and the touch panel 001 can be reduced.
  • the number of leads between the two can solve the problem that the lead is affected by the side signal interference and the load is increased and the lead length is different, and the detection accuracy and the requirement of the driving signal can be improved.
  • the touch driver 003 disposed outside the touch panel 001 outputs a shift trigger signal SR_IN, and after receiving the shift trigger signal SR_IN, the touch shift register circuit 210 starts to the touch scan electrode 004, for example.
  • the plurality of touch scan signals TXn are outputted by the touch driver 003, and the plurality of sensing signals RXm on the touch sensing electrodes 005 are detected, so that the coordinates of the touch position in the touch effective area 002 are determined according to the sensing signal RXm.
  • SRn cascaded sub-circuits
  • the input signal includes a clock signal, an on signal STV (i.e., shift trigger signal SR_IN), a high level signal VGH (not shown), and a low level signal VGL (not shown).
  • the clock signal may include a first clock signal CLK1 and a second clock signal CLK2 as needed to provide a clock to the sub-circuit SRn.
  • the clock signal is not limited to two and may be one or more.
  • the high level signal VGH and the low level signal VGL are used to provide a constant voltage signal to the touch shift register circuit 210.
  • a high level signal VGH and a low level signal VGL may be required, or a plurality of high level signals VGH and a plurality of low level signals VGL may be required, and a high level signal VGH may not be required.
  • the embodiment of the present disclosure does not limit this.
  • the turn-on signal STV is input to the first sub-circuit SR1.
  • the turn-on signal STV may be one or more depending on the different structure of the circuit.
  • the touch scan signals TX1, TX2, TX3, and TX4 are scan signals output from the sub-circuits SR1, SR2, SR3, and SR4 to the corresponding touch scan electrodes 004, respectively.
  • the output signal TXn of each sub-circuit SRn also serves as a reset signal of the previous sub-circuit and an input signal of the next sub-circuit, respectively.
  • FIG. 3 is a timing diagram of signals of a touch shift register circuit in a touch panel according to an embodiment of the present disclosure.
  • the touch driver 003 inputs the turn-on signal STV, the first clock signal CLK1, and the second clock signal CLK2 to the touch shift register circuit 210.
  • the first sub-circuit SR1 receives the turn-on signal STV, and outputs a high-level square wave when the corresponding first clock signal CLK1 is at a high level, that is, the first touch scan signal TX1.
  • the first touch scan signal TX1 is used not only for scanning the corresponding touch scan electrode 004 but also as an input signal for the next sub-circuit SR2.
  • the subsequent sub-circuit SRn receives the input signal provided by the previous sub-circuit, and outputs a high-level square wave, that is, the touch scan signal TXn, when the corresponding clock signal is at a high level.
  • the touch scan signal TXn is not only used to scan the corresponding touch scan electrode 004, but also acts as an input signal on the next sub-circuit, and also acts as a reset signal on the previous sub-circuit. This is done until the end of the last sub-circuit SR4 output.
  • each sub-circuit SRn will turn off the output of the previous sub-circuit when it starts outputting, and the next sub-circuit will also start outputting and turn off the output of the sub-circuit SRn after the output of the sub-circuit SRn ends. Thereby, each sub-circuit SRn can realize sequential output and realize the function of the shift register.
  • the number of the input signal and the output signal of the touch shift register circuit 210 is not limited to the number described in the embodiment, and may be any number, and may be determined according to actual needs.
  • the circuit structure of the sub-circuit SR3 is as shown in FIG. Referring to FIG. 4, the sub-circuit SR3 includes a first transistor T1, a second transistor T2, a third transistor T3, a fourth transistor T4, and a capacitor C1.
  • the first electrode of the first transistor T1 is connected to the first clock signal CLK1
  • the second electrode is connected to the first electrode of the second transistor T2 and the third driving scan signal TX3 is output.
  • the gate of the first transistor T1 is connected to the first electrode of the third transistor T3 and the second electrode of the fourth transistor T4.
  • the second electrode of the second transistor T2 is connected to the second electrode of the third transistor T3 and the low level signal VGL.
  • the gate of the second transistor T2 is connected to the gate of the third transistor T3 and the fourth driving scan signal TX4.
  • the first electrode of the fourth transistor T4 is connected to its gate and is connected to the second driving scan signal TX2.
  • One end of the capacitor C1 is connected to the gate of the first transistor T1, and the other end is connected to the second pole of the first transistor T1.
  • each of the above transistors are symmetrical, the source and the drain thereof can be interchanged.
  • the first pole can be a source or a drain, and the second pole can be a drain or a source.
  • each of the above transistors is an N-type transistor.
  • each of the above transistors is not limited to an N-type transistor, and may be a P-type transistor, whereby the polarity of the corresponding turn-on signal STV may be changed accordingly.
  • the structure of the sub-circuit SR3 is not limited to the structure described above, and the sub-circuit SR3 may be any structure, and may include more or less transistors and/or capacitors, for example, for example. Sub-circuits for implementing functions such as pull-up node control, pull-down node control, and noise reduction are added. Similarly, the sub-circuit SRn may be the structure described above, or may be any applicable structure, and the embodiment of the present disclosure does not limit this.
  • FIG. 5 is a cross-sectional view of a touch panel according to an embodiment of the present disclosure.
  • the touch panel includes a base substrate 100 , a gate insulating layer 120 , a touch shift register circuit 210 , a touch scan electrode 130 , a touch sensing electrode 230 , and a protective layer 140 .
  • the touch shift register circuit 210 includes a plurality of thin film transistors, capacitors, and the like.
  • the at least one thin film transistor includes a gate electrode 211, an active layer 212, and a source/drain 213.
  • the gate electrode 211 is disposed on the base substrate 100 and covered by the gate insulating layer 120.
  • the active layer 212 is disposed on the gate insulating layer 120 to form a channel region.
  • the source/drain electrodes 213 are disposed on the gate insulating layer 120, and are directly overlapped at both ends of the active layer 212 as shown in FIG.
  • the /drain 213 may also be in electrical contact with the active layer 212 through two vias, respectively.
  • the gate electrode 211, the active layer 212, and the source/drain 213 constitute a bottom gate type thin film transistor.
  • the embodiment of the present disclosure is not limited thereto, and the touch shift register circuit 210 may include a bottom gate type thin film transistor, or may include a top gate type thin film transistor, or both a bottom gate type thin film transistor and a top gate type thin film transistor. .
  • the base substrate 100 may be a glass substrate, a plastic substrate, or the like, and an inorganic buffer layer may be formed on the base substrate 100 first, and then the above-described circuit configuration may be formed on the inorganic buffer layer.
  • the gate 211 and the source/drain 213 may be made of metal, a transparent conductive material, or other suitable material.
  • the active layer 212 may be made of amorphous silicon, polycrystalline silicon, metal oxide, or other suitable materials.
  • the gate insulating layer 120 may be made of silicon nitride or other suitable material.
  • the touch scan electrode 130 includes a first electrode portion 131 and a second electrode portion 132.
  • the first electrode portion 131 is disposed on the gate insulating layer 120, and the first electrode portion 131 closest to the source/drain 213 is electrically connected to the source/drain 213, thereby receiving the output of the touch shift register circuit 210.
  • the second electrode portion 132 is disposed on the base substrate 100.
  • the gate insulating layer 120 has a first via 121 thereon.
  • the first electrode portion 131 is electrically connected to the second electrode portion 132 through the first via 121, and the second electrode portion 132 constitutes a bridge portion to connect the adjacent two first electrode portions 131.
  • the first electrode portion 131 is located in the same layer as the source/drain 213 (ie, the source and the drain), and the second electrode portion 132 is located at the same layer as the gate 211, so that the touch shift register circuit 210 can be fabricated.
  • the touch scan electrode 130 is fabricated, thereby simplifying the process and reducing the cost.
  • the structural forms of the first electrode portion 131 and the second electrode portion 132 are not limited, and the first electrode portion 131 may be disposed on the base substrate 100, the second electrode portion 132 may be disposed on the gate insulating layer 120, or Other applicable structural forms.
  • the first electrode portion 131 and the second electrode portion 132 may be made of metal, a transparent conductive material, or other suitable material.
  • the touch sensing electrodes 230 are disposed on the gate insulating layer 120 in the same layer as the first electrode portions 131 and are arranged in a cross arrangement.
  • the position of the touch sensing electrode 230 is not limited, and may be located in the same layer as the first electrode portion 131 or in a different layer from the first electrode portion 131.
  • the touch sensing electrode 230 can be made of metal, a transparent conductive material, or other suitable materials.
  • the protective layer 140 is formed on the touch shift register circuit 210, the touch scan electrode 130 and the touch sensing electrode 230, and the main functions include protection and insulation.
  • the material of the protective layer 140 is not limited and may be an inorganic insulating material such as silicon oxide, silicon nitride, or an organic insulating material such as a resin, or other suitable materials.
  • the touch driver 003 can be electrically connected to the touch shift register circuit 210 and the touch sensing electrode 230 of the touch panel, for example, by a flexible printed circuit board or the like.
  • the touch panel shown in FIG. 5 can be combined with other products and structures, for example, attached to the display side of the liquid crystal display panel and the OLED display panel, thereby forming, for example, an on-cell touch display device;
  • the display panel may include, for example, an array substrate and a counter substrate disposed opposite to the array substrate, for example, combined with each other to form a space for accommodating the liquid crystal material or the OLED device.
  • the touch structure is directly formed on the opposite substrate, for example, the opposite substrate of the display panel serves as a base substrate on which the touch structure is disposed, and the touch structure and the display structure are formed on different sides of the base substrate.
  • the touch driver 003 may be formed integrally with the display controller, or formed by a display controller or the like.
  • FIG. 6 is a cross-sectional view of another touch panel according to an embodiment of the present disclosure.
  • the touch panel of this embodiment is substantially the same as the touch panel described in FIG. 5 except that the display structure 110 and the thin film encapsulation layer 180 are further included.
  • the touch display panel can be provided.
  • the display structure 110 includes, for example, a plurality of sub-pixel units arranged in an array, and a power line (not shown) for providing a gate line for displaying a scan signal, a data line of a data signal, a voltage signal, and the like for the sub-pixel unit.
  • the display structure 110 includes an array substrate 101 and a pixel circuit 150, an electroluminescent layer 160, a cathode layer 170, a display shift register circuit 190, a common electrode line 200, and the like formed on the array substrate 101.
  • electroluminescent layer 160 is an electroluminescent display array.
  • the common electrode line 200 is disposed directly or indirectly on the array substrate 101.
  • the pixel circuit 150 of the sub-pixel unit is used to drive and control the illumination of the electroluminescent layer 160, and may include a plurality of thin film transistors or field effect transistors or other devices (such as capacitors), and may also be other suitable structural forms.
  • the pixel circuit 150 includes a plurality of thin film transistors including a gate 152, an active layer 151, and a source/drain 153.
  • the source/drain 153 is electrically connected to the electroluminescent layer 160 through the first connection electrode 291.
  • the display shift register circuit 190 is configured to provide a plurality of display scans, control signals, and the like for the pixel circuits 150 of the sub-pixel units arranged in the array, for example, to provide display scan signals in a progressive scan manner, so that the sub-pixel units can be turned on line by line.
  • the display shift register circuit 190 may include a plurality of thin film transistors or field effect transistors or other devices having the same characteristics, or may be in other suitable configurations.
  • display shift register circuit 190 includes a plurality of thin film transistors including a gate 191, an active layer 192, and a source/drain 193.
  • the source/drain 193 is electrically connected to the pixel circuit 150 through a scan line (not shown).
  • the common electrode line 200 is electrically coupled to the cathode layer 170, for example, via a second connection electrode 292 for providing a common voltage signal (eg, voltage signal VSS), the material of which may be metal or other suitable material.
  • the electroluminescent layer 160 is disposed on the pixel circuit 150 and may include, but is not limited to, an organic light emitting diode.
  • the anode, the cathode, and the organic light emitting layer sandwiched therebetween may be included. Others of the touch panel of this embodiment The structure or component can be adjusted accordingly.
  • a cathode layer 170 is disposed on the electroluminescent layer 160 of the sub-pixel unit for providing a common cathode for the sub-pixel array.
  • the material of the cathode layer 170 may be metal, a transparent conductive material or other suitable material.
  • the thin film encapsulation layer 180 is disposed on the display structure 110, and the main functions include protection and insulation.
  • the material of the film encapsulation layer 180 is not limited and may be an inorganic or organic film, or other suitable materials.
  • the touch shift register circuit 210 and the touch structure are directly formed on the thin film encapsulation layer 180, that is, the thin film encapsulation layer 180 protects and insulates the display structure 110 and functions as the touch shift register circuit 210.
  • the base substrate of the touch structure serves as a support.
  • the touch panel further includes a first insulating layer 250, a second insulating layer 260, a third insulating layer 270, and a pixel defining layer 280.
  • the respective insulating layers and pixel defining layers are disposed on the pixel circuit 150 and the display shift register circuit.
  • the arrangement of each film layer of 190 can be referred to FIG. 6 and will not be described in detail herein. It should be noted that, in the embodiment of the present disclosure, the manner in which the pixel circuit 150, the display shift register circuit 190, the common electrode line 200, and the above respective insulating layers and pixel defining layers are not limited to the case shown in FIG.
  • the thin film transistor in the pixel circuit 150 and the display shift register circuit 190 may be a top gate type or a bottom gate type thin film transistor, which is not limited in the embodiment of the present disclosure.
  • the touch panel of this embodiment integrates components for implementing a touch function and components for realizing a display function, thereby having both a touch function and a display function, and does not affect the structure of the existing display component. It can reduce the impact on the design of the bezel, which is beneficial to the integration of touch and display drive and narrow bezel design.
  • the display structure 110 is not limited to the above-mentioned structural form, and may be any structural form, and may include more or less components, which is not limited by the embodiments of the present disclosure.
  • FIG. 7 is a cross-sectional view of another touch panel according to an embodiment of the present disclosure.
  • the touch panel of this embodiment may be substantially the same as the touch panel described in FIG. 6 except for the manner in which the touch sensing electrodes 230 , the touch scan electrodes 130 , and the touch shift register circuit 210 are disposed.
  • the touch sensing electrode 230 is disposed on the thin film encapsulation layer 180.
  • the touch scan electrode 130 includes a first electrode portion 131 and a second electrode portion 132.
  • the first electrode portion 131 is disposed on the thin film encapsulation layer 180 and is located in the same layer as the touch sensing electrode 230.
  • the second electrode portion 132 is disposed on the insulating layer 125.
  • the insulating layer 125 has a second via 122.
  • the first electrode portion 131 is electrically connected to the second electrode portion 132 through the second via 122.
  • the second electrode portion 132 forms a bridge portion to pass the touch scan electrode 130 across the touch sensing electrode 230 that intersects the touch scan electrode 130.
  • the touch shift register circuit 210 is disposed on the array substrate 101 and is, for example, at the same horizontal position as the display shift register circuit 190, whereby the array substrate 101 in this embodiment is used.
  • the touch shift register circuit 210 includes a plurality of thin film transistors
  • the display shift register circuit 190 also includes a plurality of thin film transistors, and respective film layers of the thin film transistors in the touch shift register circuit 210 and the display shift register circuit 190.
  • the respective film layers of the thin film transistor correspond to each other, and the corresponding film layers are located at the same layer, that is, the touch shift register circuit 210 and the display shift register circuit 190 are at the same horizontal position.
  • the thin film encapsulation layer 180 has a third via 181.
  • the touch shift register circuit 210 is electrically connected to the first electrode portion 131 through the third via 181, so that the touch scan signal TXn can be output to the touch scan electrode 130.
  • the display structure 110 and the touch structure are disposed on the same side of the substrate, and the touch structure is farther away from the substrate than the display structure 110.
  • the touch shift register circuit 210 is disposed on the array substrate 101 of the display structure 110, which can reduce the process temperature requirement, is beneficial to improving the performance of the touch shift register circuit 210, and can be combined with the display shift register circuit 190 and
  • the pixel circuit 150 is fabricated at the same time, which reduces the number of process steps and reduces the production cost. It should be noted that, in various embodiments of the present disclosure, the position of the touch shift register circuit 210 on the array substrate 101 is not limited, and may be determined according to actual needs. The position at which the touch sensing electrode 230, the first electrode portion 131, and the second electrode portion 132 are disposed is not limited and can be determined according to actual needs.
  • FIG. 8 is a cross-sectional view of another touch panel according to an embodiment of the present disclosure.
  • the touch panel of this embodiment in addition to the touch shift register circuit 210, the display shift register circuit 190, the touch scan connection line 220, and the common electrode line 200, the touch panel of this embodiment is basically the same as the touch panel described in FIG. Same on the same.
  • the touch panel further includes a first shift register circuit 240.
  • the first shift register circuit 240 is disposed on the array substrate 101 and includes a touch shift register circuit 210 and a display shift register circuit 190.
  • the touch scan connection line 220 is disposed on the array substrate 101 (eg, disposed on the first insulating layer 250 on the array substrate 101) and is electrically connected to the touch shift register circuit 210 in the first shift register circuit 240.
  • the material of the touch scan connection line 220 may be metal, a transparent conductive material or other suitable materials.
  • the common electrode lines 200 are partially stacked on the touch scan connection line 220 and insulated from the touch scan connection lines 220 (for example, the common electrode lines 200 are disposed on the second insulating layer 260).
  • the thin film encapsulation layer 180 has a third via 181.
  • the touch scan shift register circuit 210 in the first shift register circuit is electrically connected to the first electrode portion 131 of the touch scan electrode 130 through the touch scan connection line 220 and the third via 181 for touch
  • the scan electrode 130 outputs a touch scan signal TXn.
  • the display shift register circuit 190 in the first shift register circuit 240 is electrically connected to the pixel circuit 150, for example, by a scan line (not shown) for providing a plurality of pixel circuits 150 of the sub-pixel unit arranged in the array. Display scan signals, etc.
  • the first shift register circuit 240 may be only a conventional shift register circuit, which is used as both the display shift register circuit 190 and the multiplexed touch.
  • the shift register circuit 210 is controlled, that is, the display shift register circuit 190 is multiplexed as the touch shift register circuit 210.
  • the gate signal outputted from the display shift register circuit 190 is multiplexed into the touch scan signal TXn outputted by the touch shift register circuit 210.
  • the number of output signals of the display shift register circuit 190 is not limited, and the types of signals that can be multiplexed by the touch shift register circuit 210 are not limited, and may be selected. Any signal is multiplexed.
  • FIG. 9 is a cross-sectional view of another touch panel according to an embodiment of the present disclosure.
  • the touch panel of this embodiment is substantially the same as the touch panel described in FIG. 6, except for the cover 102.
  • display structure 110 includes a cover plate 102.
  • the cover plate 102 is disposed on the cathode layer 170, and the main functions include protection, insulation, and support.
  • the material of the cover plate 102 can be glass, plastic, ceramic material or other suitable material.
  • the touch panel may further include a flat layer 103 covering the cathode layer 170, and the cover 102 is disposed on the flat layer 103.
  • the touch shift register circuit 210, the touch scan electrode 130 and the touch sensing electrode 230 are disposed on the cover 102.
  • the cover 102 is an example of a base substrate, the display structure 110 and the touch structure. They are disposed on both sides of the base substrate. Since the touch shift register circuit 210 is disposed on the cap plate 102, the process temperature requirement can be reduced, the performance of the touch shift register circuit 210 is improved, and the fabrication process of the existing display structure is not affected.
  • the display structure 110 may be an OLED panel, and the basic pixel circuit of each sub-pixel unit of the OLED panel is usually a 2T1C pixel circuit, that is, using two TFTs (thin film transistors) and one storage capacitor Cs.
  • 10A and 10B are schematic views of two 2T1C pixel circuits, respectively.
  • a 2T1C pixel circuit includes a switching transistor T0, a driving transistor N0, and a storage capacitor Cs.
  • the gate of the switching transistor T0 is connected to the gate line (scanning line) to receive the scan signal Scan1, for example, the source is connected to the data line to receive the data signal Vdata, the drain is connected to the gate of the driving transistor N0; the driving transistor N0 The source is connected to the first power terminal Vdd (for example, the high voltage terminal), and the drain is connected to the positive terminal of the OLED; one end of the storage capacitor Cs is connected to the drain of the switching transistor T0 and the gate of the driving transistor N0, and the other end is connected to the driving.
  • Vdd for example, the high voltage terminal
  • the 2T1C pixel circuit is driven by controlling the brightness and darkness (gray scale) of the pixel via the two TFTs and the storage capacitor Cs.
  • the scan signal Scan1 is applied through the gate line to turn on the switching transistor T0, the data voltage (data signal Vdata) sent from the data driving circuit through the data line charges the storage capacitor Cs via the switching transistor T0, thereby storing the data voltage in the storage.
  • the switching transistor T0 is an N-type transistor and the driving transistor N0 is a P-type transistor.
  • another 2T1C pixel circuit also includes a switching transistor T0, a driving transistor N0, and a storage capacitor Cs, but the connection mode thereof is slightly changed, and the driving transistor N0 is an N-type transistor.
  • the variation of the pixel circuit of FIG. 10B with respect to FIG. 10A includes that the positive terminal of the OLED is connected to the first power terminal Vdd (for example, the high voltage terminal) and the negative terminal is connected to the drain of the driving transistor N0, and the source of the driving transistor N0 is connected.
  • Vdd for example, the high voltage terminal
  • Vss such as the low voltage side
  • the operation mode of the 2T1C pixel circuit is basically the same as that of the pixel circuit shown in FIG. 10A, and details are not described herein again.
  • the switching transistor T0 is not limited to the N-type transistor, and may be a P-type transistor, whereby the polarity of the scan signal Scan1 that controls its on or off is changed accordingly. can.
  • the pixel circuit may further include other circuit structures having a compensation function on the basis of the basic pixel circuit of the above 2T1C.
  • the compensation function can be realized by voltage compensation, current compensation or hybrid compensation, and the pixel circuit with compensation function can be, for example, 4T1C or 4T2C.
  • the data write circuit and the compensation circuit cooperate to write a voltage value carrying the data voltage and the threshold voltage information of the drive transistor to the gate of the drive transistor and stored by the voltage storage circuit.
  • An example of a specific compensation circuit is not described in detail herein.
  • At least one embodiment of the present disclosure further provides a touch device, which includes the touch panel of any of the embodiments of the present disclosure.
  • the touch device can shorten the length of the lead between the touch shift register circuit and the touch scan electrode, reduce the number of leads between the touch driver and the touch panel, and solve the problem that the lead is interfered by the side signal and the load is increased and the lead
  • the problem of different loads caused by different lengths can improve the detection accuracy and reduce the requirements on the driving signals
  • at least one embodiment including the display structure can reduce the influence on the frame design, and is advantageous for implementing touch and display driving integration and narrow borders. design.
  • FIG. 11 is a schematic diagram of the appearance of a touch device according to an embodiment of the present disclosure.
  • the touch device is a television set 300.
  • the television set 300 includes a touch panel 301.
  • the touch panel 301 is a touch panel having a display structure according to any embodiment of the present disclosure.
  • the touch panel 301 can display according to the image signal and can perform touch detection.
  • the touch device is not limited to the television set 300, and may be any of a mobile phone, a tablet computer, a notebook computer, an e-book, a game machine, a display, a digital photo frame, a navigator, and the like.
  • the integrated position of the touch panel 301 is not limited and can be integrated on the front, side or other suitable position of the touch device.
  • At least one embodiment of the present disclosure also provides a method of fabricating a touch panel, the method comprising forming a touch shift register circuit and a touch structure on a substrate.
  • the touch sensing structure includes a touch scan electrode and a touch sensing electrode, wherein the touch scan electrode is disposed on the base substrate along a first direction, and the touch sensing electrode is disposed on the lining along a second direction The first direction intersects the second direction on the bottom substrate, and the touch shift register circuit is electrically connected to the touch scan electrode.
  • the method can manufacture the touch panel of any of the above embodiments, and can solve the problem that the lead of the touch scan signal is affected by the side signal interference and the load is increased and the lead length is different, which can improve the detection precision and reduce the pair.
  • the requirements of the drive signal, and including at least one embodiment of the display structure can reduce the impact on the bezel design, facilitating touch and display drive integration and narrow bezel design.
  • the order in which the touch shift register circuit and the touch structure are fabricated is not limited.
  • a touch shift register circuit is first formed on a base substrate, and then a touch structure is fabricated on the base substrate.
  • the touch shift register circuit and the touch structure can be fabricated simultaneously.
  • the method for manufacturing the touch panel is not limited to the steps and the order described above, and may include more steps, and the order between the steps may be determined according to actual needs.
  • the method of manufacturing a touch panel may further include the step of forming a display structure on the base substrate.

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Abstract

一种触控面板、具有该触控面板的触控设备和制造触控面板的方法，该触控面板(001)包括衬底基板、触控结构和触控移位寄存器电路(210)。所述触控结构包括：触控扫描电极(004)，沿第一方向设置在所述衬底基板上；以及触控感应电极(005)，沿第二方向设置在所述衬底基板上，所述第一方向与所述第二方向相交叉。所述触控移位寄存器电路(210)设置在所述衬底基板上且与所述触控扫描电极(004)电连接，配置为向所述触控扫描电极(004)提供触控扫描信号。该触控面板(001)可以解决触控扫描信号的引线受到侧边信号干扰而负载增大和引线长度不同造成的负载不同的问题，能够提高检测精度，降低对驱动信号的要求，有利于触控与显示驱动集成的实现。

Description

触控面板、触控设备和制造触控面板的方法
本申请要求于2017年12月1日递交的中国专利申请第201711250373.4号的优先权，在此以引入的方式并入上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及一种触控面板、具有该触控面板的触控设备和制造触控面板的方法。
背景技术
随着技术的发展，触摸屏得到了越来越广泛的应用。触摸屏通过利用触觉反馈系统取代机械式的按钮面板，从而提供了简单、方便的人机交互方式。根据不同的工作原理，触摸屏包括电容式、电阻式、红外式和表面声波式等类型。电容式触摸屏利用人体的电流感应现象进行工作，支持多点触控，且具有耐磨损、寿命长、功耗低等优点，因此得到了较快发展，已经广泛应用到手机、平板电脑、笔记本电脑、电视机、显示器、数码相框、导航仪等电子产品中。
发明内容
本公开至少一个实施例提供一种触控面板，包括：衬底基板；触控结构，所述触控结构包括：触控扫描电极，沿第一方向设置在所述衬底基板上；以及触控感应电极，沿第二方向设置在所述衬底基板上，其中，所述第一方向与所述第二方向相交叉；触控移位寄存器电路，设置在所述衬底基板上且与所述触控扫描电极电连接，配置为向所述触控扫描电极提供触控扫描信号。
例如，在本公开一实施例提供的触控面板中，所述触控扫描电极包括多个第一电极部分和多个第二电极部分，所述第一电极部分与所述触控感应电极位于同一层，所述第二电极部分位于不同层且构成连接相邻的第一电极部分的桥接部分，以使得所述触控扫描电极越过与所述触控扫描电极交叉的触 控感应电极。
例如，在本公开一实施例提供的触控面板中，所述触控移位寄存器电路包括至少一个薄膜晶体管，所述薄膜晶体管的源极和漏极与所述触控扫描电极的第一部分位于同一层，所述薄膜晶体管的栅极与所述触控扫描电极的第二电极部分位于同一层。
例如，在本公开一实施例提供的触控面板中，所述第一电极部分相比于所述第二电极部分更远离所述衬底基板。
例如，在本公开一实施例提供的触控面板包括显示结构，其中，所述显示结构与所述触控结构在垂直于所述触控面板板面的方向上层叠设置。
例如，在本公开一实施例提供的触控面板中，所述显示结构和所述触控结构设置在所述衬底基板的同一侧，且所述触控结构相比于所述显示结构更远离所述衬底基板。
例如，在本公开一实施例提供的触控面板包括薄膜封装层，其中，所述薄膜封装层设置在所述显示结构上，所述触控结构设置在所述薄膜封装层上。
例如，在本公开一实施例提供的触控面板中，所述触控移位寄存器电路设置在所述薄膜封装层上。
例如，在本公开一实施例提供的触控面板中，所述显示结构包括阵列基板，所述阵列基板作为所述衬底基板，所述触控移位寄存器电路设置在所述阵列基板上。
例如，在本公开一实施例提供的触控面板中，所述薄膜封装层具有过孔，所述触控移位寄存器电路由所述薄膜封装层覆盖，且通过所述薄膜封装层中的过孔与所述触控扫描电极电连接。
例如，在本公开一实施例提供的触控面板中，所述显示结构还包括显示移位寄存器电路，所述触控移位寄存器电路与所述显示移位寄存器电路并列设置在所述阵列基板上。
例如，在本公开一实施例提供的触控面板中，所述显示结构还包括公共电极线，所述公共电极线设置在所述阵列基板上。
例如，在本公开一实施例提供的触控面板还包括第一移位寄存器电路，其中，所述显示结构还包括显示移位寄存器电路，所述第一移位寄存器电路包括所述触控移位寄存器电路和所述显示移位寄存器电路，所述阵列基板上 设置有触控扫描连接线，所述薄膜封装层具有过孔，所述触控移位寄存器电路通过所述触控扫描连接线和所述薄膜封装层中的过孔与所述触控扫描电极电连接。
例如，在本公开一实施例提供的触控面板中，所述显示结构包括盖板，所述盖板作为所述衬底基板，所述显示结构和所述触控结构设置在所述盖板的两侧。
例如，在本公开一实施例提供的触控面板中，所述显示结构包括电致发光显示阵列。
本公开至少一个实施例还提供一种触控设备，包括本公开任一实施例所述的触控面板。
本公开至少一个实施例还提供一种制造触控面板的方法，包括：在衬底基板上形成触控移位寄存器电路和触控结构；其中，所述触控结构包括触控扫描电极和触控感应电极，所述触控扫描电极沿第一方向设置在所述衬底基板上，所述触控感应电极沿第二方向设置在所述衬底基板上，所述第一方向与所述第二方向相交叉，所述触控移位寄存器电路与所述触控扫描电极电连接。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为本公开一实施例提供的一种触控面板的平面示意图；
图2为本公开一实施例提供的一种触控面板的触控扫描移位寄存器电路结构示意图；
图3为本公开一实施例提供的一种触控面板的触控扫描移位寄存器电路信号时序图；
图4为本公开一实施例提供的一种触控面板的触控扫描移位寄存器电路的子电路结构图；
图5为本公开一实施例提供的一种触控面板的剖面示意图；
图6为本公开一实施例提供的另一种触控面板的剖面示意图；
图7为本公开一实施例提供的另一种触控面板的剖面示意图；
图8为本公开一实施例提供的另一种触控面板的剖面示意图；
图9为本公开一实施例提供的另一种触控面板的剖面示意图；
图10A为本公开一实施例提供的一种触控面板的2T1C像素电路结构图；
图10B为本公开一实施例提供的另一种触控面板的2T1C像素电路结构图；以及
图11为本公开一实施例提供的一种触控设备的外观示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
电容式触摸屏包括自电容式触摸屏和互电容式触摸屏。互电容式触摸屏一般包括两组电极，分别为触控扫描电极和触控感应电极。两组电极交叉设置在衬底基板上，在二者彼此交叉的位置形成电容。当手指触摸到屏幕时，影响触摸点附近触控扫描电极和触控感应电极之间通过交叉形成的电容的耦合，从而改变了电极之间的电容的电容量。触控驱动器通过其中的触控移位寄存器电路向触控扫描电极提供扫描信号，然后通过检测触控感应电极接收 的感应信号来检测电容值的变化，从而判断触控位置。由于触控扫描电极的数量庞大，因此触控驱动器与触控面板之间的引线很多，引线受到侧边信号干扰负载增大，且引线的长度不同造成负载不同，从而干扰检测信号，影响检测精度，这种设置对驱动信号的要求较高。
本公开至少一实施例提供一种触控面板、具有该触控面板的触控设备和制造触控面板的方法。该触控面板通过将触控移位寄存器电路制作在设置有触控结构的衬底基板上，从而缩短了触控移位寄存器与触控扫描电极之间的引线的长度，减少了触控驱动器与触控面板之间的引线数量，由此可以解决引线受到侧边信号干扰而负载增大和引线长度不同造成的负载不同的问题，能够提高检测精度，降低对驱动信号的要求。而且，至少一个实施例的触控面板还可以降低对边框设计的影响，有利于实现触控与显示驱动集成和窄边框设计。
下面，将参考附图详细地说明本公开的实施例。应当注意的是，不同的附图中相同的附图标记将用于指代已描述的相同的元件。
本公开至少一实施例提供一种触控面板，包括衬底基板、触控结构和触控移位寄存器电路。所述触控结构包括触控扫描电极和触控感应电极，所述触控扫描电极沿第一方向设置在所述衬底基板上，所述触控感应电极沿第二方向设置在所述衬底基板上，所述第一方向与所述第二方向相交叉。所述触控移位寄存器电路设置在所述衬底基板上且与所述触控扫描电极电连接，配置为向所述触控扫描电极提供触控扫描信号。
图1为本公开一实施例提供的一种触控面板的平面示意图。参考图1，该触控面板001包括设置在衬底基板上的触控扫描电极004、触控感应电极005和触控移位寄存器电路210。
触控扫描电极004和触控感应电极005彼此绝缘且设置在触控有效区002内。触控扫描电极004沿第一方向(图中的横向)设置，触控感应电极005沿与第一方向交叉的第二方向(图中的纵向)设置，例如，第一方向与第二方向相互垂直，即第一方向与第二方向的夹角为90度，本公开的实施例并不限于此。
例如，在如图1所示的示例中，触控扫描电极004包括多个第一电极部分0041和多个第二电极部分0042，而触控感应电极005是连续延伸的。第 一电极部分0041与触控感应电极005位于同一层。第二电极部分0042位于不同层(可以在更接近衬底基板的层或更远离衬底基板的层)且构成连接相邻的第一电极部分0041的桥接部分，以使得触控扫描电极004越过与其交叉的触控感应电极005。需要说明的是，本公开的各实施例中，触控扫描电极004和触控感应电极005不局限于图中的菱形块状结构形式，可以为其他结构形式，例如矩形、三角形、圆形等。例如，在一个实施例的示例中，触控感应电极005与触控扫描电极004位于不同层，由此实现彼此交叉且绝缘，从而不需要桥接部分，该方式制作工艺简单，易于实现。例如，在另一个实施例的示例中，触控扫描电极004是连续延伸的，触控感应电极005可以包括第一电极部分和第二电极部分，第二电极部分构成桥接部分以使得触控感应电极005越过与其交叉的触控扫描电极004。这里，第一方向与第二方向可以为任意方向，且第一方向与第二方向的夹角不局限于90度。
触控移位寄存器电路210直接设置在衬底基板上且位于触控有效区002之外的周边区域中。该触控移位寄存器电路210包括多个级联的子电路(移位寄存器单元)SRn(其中，n≥1)，该多个子电路SRn与多个彼此平行设置的触控扫描电极004一一对应且分别电连接，以在工作过程中向多个触控扫描电极004依次提供触控扫描信号TXn(其中，n≥1)，例如以逐行扫描的方式提供触控扫描信号TXn。触控移位寄存器电路210的结构形式不受限制，可以包括多个薄膜晶体管或场效应管或其他特性相同的器件，也可以为其他适用的结构形式。薄膜晶体管可以是氧化物薄膜晶体管，也可以是其他类型的晶体管，例如非晶硅薄膜晶体管、多晶硅薄膜晶体管等。触控移位寄存器电路210在触控面板001上的设置位置不受限制，可以根据实际需求确定。
触控驱动器003可以设置在触控面板001之外，例如可以通过柔性印刷电路板等方式与触控移位寄存器电路210和触控感应电极005电连接。触控驱动器003用于控制触控面板001进行触控检测，例如，向触控移位寄存器电路210提供移位触发信号SR_IN，采集触控感应电极005的多个感应信号RXm(其中，m≥1)。触控驱动器003还可以包括处理电路，用以根据感应信号RXm判断触控位置在触控有效区002内的坐标。触控驱动器003的结构形式不受限制，可以为专用或通用芯片，也可以为专用驱动电路或专用驱 动装置或其他适用的结构形式。
通过将触控移位寄存器电路210直接设置在触控面板001上，可以缩短触控移位寄存器电路210与触控扫描电极004之间的引线的长度，减少触控驱动器003与触控面板001之间的引线数量，可以解决引线受到侧边信号干扰而负载增大和引线长度不同造成的负载不同的问题，还能够提高检测精度，降低对驱动信号的要求。
该触控面板001的工作过程描述如下。进行触控检测时，设置在触控面板001之外的触控驱动器003输出移位触发信号SR_IN，触控移位寄存器电路210接收移位触发信号SR_IN之后，开始向触控扫描电极004例如逐行输出多个触控扫描信号TXn，触控驱动器003检测触控感应电极005上的多个感应信号RXm，从而根据感应信号RXm判断触控位置在触控有效区002内的坐标。
在一个实施例的示例中，触控移位寄存器电路210的结构如图2所示。触控移位寄存器电路210包括多个级联的子电路(移位寄存器单元)SRn(其中，n＝1,2,3,4)。当然，子电路SRn的个数不局限于4个，可以为任意个数，可以根据触控扫描电极004的条数确定。输入信号包括时钟信号、开启信号STV(即移位触发信号SR_IN)、高电平信号VGH(图中未示出)和低电平信号VGL(图中未示出)。时钟信号根据需要可以包括第一时钟信号CLK1和第二时钟信号CLK2，用以为子电路SRn提供时钟。根据电路的不同结构，时钟信号不局限于两个，可以为一个或多个。高电平信号VGH和低电平信号VGL用于为触控移位寄存器电路210提供恒压信号。根据电路的不同结构，可以需要一个高电平信号VGH和一个低电平信号VGL，也可以需要多个高电平信号VGH和多个低电平信号VGL，还可以不需要高电平信号VGH和/或低电平信号VGL，本公开的实施例对此不作限制。开启信号STV输入到第一个子电路SR1。根据电路的不同结构，开启信号STV可以为一个或多个。触控扫描信号TX1、TX2、TX3、TX4分别是子电路SR1、SR2、SR3、SR4输出给相应的触控扫描电极004的扫描信号。并且，除了第一个子电路SR1和最后一个子电路SR4外，每一个子电路SRn的输出信号TXn还分别作为上一个子电路的复位信号和下一个子电路的输入信号。
图3为本公开一实施例提供的触控面板中的触控移位寄存器电路的信号 时序图。参考图3，触控扫描开始后，触控驱动器003对触控移位寄存器电路210输入开启信号STV、第一时钟信号CLK1和第二时钟信号CLK2。第一个子电路SR1接收到开启信号STV，在对应的第一时钟信号CLK1为高电平时，输出高电平方波，即为第一触控扫描信号TX1。第一触控扫描信号TX1不仅用于扫描对应的触控扫描电极004，还作为输入信号作用于下一个子电路SR2。从第二个子电路SR2开始，后续子电路SRn接收到前一个子电路提供的输入信号，在各自对应的时钟信号为高电平时，输出高电平方波，即为触控扫描信号TXn。该触控扫描信号TXn不仅用于扫描对应的触控扫描电极004，也作为输入信号作用于下一个子电路，还作为复位信号作用于上一个子电路。如此直至最后一个子电路SR4输出结束为止。每个子电路SRn会在其开始输出时，关闭上一个子电路的输出，其下一个子电路也将在该子电路SRn输出结束之后开始输出并关闭该子电路SRn的输出。由此，各个子电路SRn即可实现顺序输出，实现了移位寄存器的功能。当然，触控移位寄存器电路210的输入信号和输出信号的个数不局限于该实施例描述的个数，可以为任意个数，可以根据实际需求确定。
在一个实施例的示例中，子电路SR3的电路结构如图4所示。参考图4，子电路SR3包括第一晶体管T1、第二晶体管T2、第三晶体管T3、第四晶体管T4和电容C1。例如，第一晶体管T1的第一极连接第一时钟信号CLK1，第二极连接第二晶体管T2的第一极并输出第三驱动扫描信号TX3。第一晶体管T1的栅极连接第三晶体管T3的第一极以及第四晶体管T4的第二极。第二晶体管T2的第二极连接第三晶体管T3的第二极以及低电平信号VGL。第二晶体管T2的栅极连接第三晶体管T3的栅极以及第四驱动扫描信号TX4。第四晶体管T4的第一极和其栅极相连，并连接第二驱动扫描信号TX2。电容C1的一端连接第一晶体管T1的栅极，另一端连接第一晶体管T1的第二极。该电路工作时，当第二驱动扫描信号TX2为高电平，则第四晶体管T4和第一晶体管T1接通，因此第三驱动扫描信号TX3等于第一时钟信号CLK1，即当第一时钟信号CLK1为高电平时第三驱动扫描信号TX3也输出高电平。当第四驱动扫描信号TX4为高电平时，第二驱动晶体管T2和第三驱动晶体管T3接通，因此第三驱动扫描信号TX3等于低电平信号VGL，即达到复位的效果。由于上述各个晶体管的源极、漏极是对称的，所以其源极、 漏极可以互换。第一极可以为源极或者漏极，第二极可以为漏极或者源极。例如，上述各个晶体管为N型晶体管。当然，上述各个晶体管不限于N型晶体管，也可以为P型晶体管，由此相应的开启信号STV的极性进行相应地改变即可。
需要说明的是，本公开的各实施例中，子电路SR3的结构不局限于上面描述的结构，子电路SR3可以为任意结构，也可以包括更多或更少的晶体管和/或电容，例如加入用于实现上拉节点控制、下拉节点控制、降噪等功能的子电路等。同样地，子电路SRn可以为上面描述的结构，也可以为任意适用的结构，本公开的实施例对此不作限制。
图5为本公开一实施例提供的一种触控面板的剖面示意图。参考图5，该触控面板包括衬底基板100、栅绝缘层120、触控移位寄存器电路210、触控扫描电极130、触控感应电极230和保护层140。
例如，触控移位寄存器电路210包括多个薄膜晶体管、电容等。至少一个薄膜晶体管包括栅极211、有源层212和源极/漏极213。该栅极211设置在衬底基板100上，由栅绝缘层120覆盖。有源层212设置在栅绝缘层120上，以形成沟道区域。源极/漏极213设置在栅绝缘层120上，如图5所示直接搭接在有源层212的两端；或者，在有源层212上覆盖有层间绝缘层的情形，源极/漏极213也可以通过两个过孔分别与有源层212电接触。这里，栅极211、有源层212和源极/漏极213构成了底栅型薄膜晶体管。当然，本公开的实施例不局限于此，触控移位寄存器电路210可以包括底栅型薄膜晶体管，也可以包括顶栅型薄膜晶体管，或者同时包括底栅型薄膜晶体管和顶栅型薄膜晶体管。这里，衬底基板100可以为玻璃基板、塑料基板等，并且还可以在衬底基板100上先形成无机缓冲层，然后在无机缓冲层上形成上述电路构造。栅极211和源极/漏极213可以采用金属、透明导电材料或其他适用的材料。有源层212可以采用非晶硅、多晶硅、金属氧化物或其他适用的材料。栅绝缘层120可以采用硅氮化物或其他适用的材料。
在该示例中，触控扫描电极130包括第一电极部分131和第二电极部分132。第一电极部分131设置在栅绝缘层120上，且最靠近源极/漏极213的第一电极部分131与源极/漏极213电连接，由此可以接收触控移位寄存器电路210输出的触控扫描信号TXn。第二电极部分132设置在衬底基板100上。 栅绝缘层120上具有第一过孔121。第一电极部分131通过第一过孔121与第二电极部分132电连接，第二电极部分132构成桥接部分以连接相邻的两个第一电极部分131。这里，第一电极部分131与源极/漏极213(即源极和漏极)位于同一层，第二电极部分132与栅极211位于同一层，因此可以在制作触控移位寄存器电路210的同时制作触控扫描电极130，从而可以简化工艺，降低成本。第一电极部分131和第二电极部分132的结构形式不受限制，也可以将第一电极部分131设置在衬底基板100上，将第二电极部分132设置在栅绝缘层120上，或者采用其他适用的结构形式。第一电极部分131和第二电极部分132可以采用金属、透明导电材料或其他适用的材料。
在该示例中，触控感应电极230设置在栅绝缘层120上，与第一电极部分131位于同一层且交叉排列。触控感应电极230的设置位置不受限制，可以与第一电极部分131位于同一层，也可以与第一电极部分131位于不同层。触控感应电极230可以采用金属、透明导电材料或其他适用的材料。
保护层140形成在触控移位寄存器电路210、触控扫描电极130和触控感应电极230上，主要作用包括保护、绝缘。保护层140的材料不受限制，可以是无机绝缘材料如硅氧化物、硅氮化物，或有机绝缘材料例如树脂，或者其他适用的材料。
该实施例中，触控驱动器003例如可以通过柔性印刷电路板等方式与该触控面板的触控移位寄存器电路210和触控感应电极230电连接。
如图5所示的触控面板可以与其他产品、结构结合，例如附着在液晶显示面板、OLED显示面板的显示侧上，从而形成例如外挂式(On-cell)触控显示设备；在这种结构中，显示面板例如可以包括阵列基板和与该阵列基板相对设置的对置基板，二者例如彼此结合以形成容纳液晶材料或OLED器件的空间。触控结构例如直接形成在对置基板上，此时显示面板的对置基板作为设置触控结构的衬底基板，触控结构和显示结构形成在该衬底基板的不同侧。例如，触控驱动器003可以与显示控制器一体形成，或者由显示控制器形成等。
图6为本公开一实施例提供的另一种触控面板的剖面示意图。参考图6，除了还进一步包括显示结构110和薄膜封装层180外，该实施例的触控面板与图5中描述的触控面板基本上相同。在该实施例中，由于显示结构110与 触控结构例如触控扫描电极130和触控感应电极230彼此组合，由此可以提供触控显示面板。该显示结构110例如包括多个按照阵列排布的子像素单元以及为这些子像素单元提供显示扫描信号的栅线、数据信号的数据线、电压信号的电源线(图中未示出)等，例如，该显示结构110包括阵列基板101以及形成在阵列基板101上的像素电路150、电致发光层160、阴极层170、显示移位寄存器电路190和公共电极线200等。例如，电致发光层160为电致发光显示阵列。例如，公共电极线200直接或间接设置在阵列基板101上。
子像素单元的像素电路150用于驱动、控制电致发光层160发光，可以包括多个薄膜晶体管或场效应管或其他器件(例如电容)，也可以为其他适用的结构形式。例如，在一个示例中，如图6所示，像素电路150包括多个薄膜晶体管，至少一个薄膜晶体管包括栅极152、有源层151和源极/漏极153。例如，源极/漏极153通过第一连接电极291与电致发光层160电连接。
显示移位寄存器电路190用于为阵列排布的子像素单元的像素电路150提供多个显示扫描、控制信号等，例如以逐行扫描的方式提供显示扫描信号，从而可以逐行开启子像素单元以进行显示。显示移位寄存器电路190可以包括多个薄膜晶体管或场效应管或其他特性相同的器件，也可以为其他适用的结构形式。例如，在一个示例中，如图6所示，显示移位寄存器电路190包括多个薄膜晶体管，至少一个薄膜晶体管包括栅极191、有源层192和源极/漏极193。例如，源极/漏极193通过扫描线(图中未示出)与像素电路150电连接。
公共电极线200例如通过第二连接电极292与阴极层170电连接，用于提供公共电压信号(例如电压信号VSS)，其材料可以采用金属或其他适用的材料。电致发光层160设置在像素电路150上，可以包括但不局限于有机发光二极管，例如可以包括阳极、阴极和夹置在二者之间的有机发光层，该实施例的触控面板的其他结构或部件作相应调整即可。阴极层170设置在子像素单元的电致发光层160上，用于为子像素阵列提供公共阴极。阴极层170的材料可以采用金属、透明导电材料或其他适用的材料。薄膜封装层180设置在显示结构110上，主要作用包括保护、绝缘。薄膜封装层180的材料不受限制，可以为无机或有机薄膜，或其他适用的材料。在该实施例中，触控移位寄存器电路210与触控结构直接形成在薄膜封装层180上，即薄膜封装 层180既对显示结构110进行保护、绝缘，又作为触控移位寄存器电路210和触控结构的衬底基板以起到支撑作用。
例如，该触控面板还包括第一绝缘层250、第二绝缘层260、第三绝缘层270和像素限定层280，上述各个绝缘层和像素限定层设置在像素电路150和显示移位寄存器电路190的各个膜层之间，其设置方式可参考图6，此处不再详述。需要说明的是，本公开的实施例中，像素电路150、显示移位寄存器电路190、公共电极线200以及上述各个绝缘层和像素限定层的设置方式不限于图6所示的情形，可以为任意适用的设置方式，例如可以参考常规设计，此处不再赘述。像素电路150和显示移位寄存器电路190中的薄膜晶体管可以为顶栅型或底栅型薄膜晶体管，本公开的实施例对此不作限制。
该实施例的触控面板整合了用于实现触控功能的部件和用于实现显示功能的部件，从而既具有触控功能，又具有显示功能，并且不影响现有的显示部件的结构，还可以降低对边框设计的影响，有利于实现触控与显示驱动集成和窄边框设计。
需要说明的是，本公开的各实施例中，显示结构110不局限于上述结构形式，可以为任意结构形式，也可以包括更多或更少的部件，本公开的实施例对此不作限制。
图7为本公开一实施例提供的另一种触控面板的剖面示意图。参考图7，除了触控感应电极230、触控扫描电极130和触控移位寄存器电路210的设置方式之外，该实施例的触控面板可以与图6中描述的触控面板基本上相同。在该实施例中，触控感应电极230设置在薄膜封装层180上。触控扫描电极130包括第一电极部分131和第二电极部分132。第一电极部分131设置在薄膜封装层180上，且与触控感应电极230位于同一层。第二电极部分132设置在绝缘层125上。绝缘层125具有第二过孔122。第一电极部分131通过第二过孔122与第二电极部分132电连接。第二电极部分132构成桥接部分以使触控扫描电极130越过与其交叉的触控感应电极230。
在该实施例中，如图7所示，触控移位寄存器电路210设置在阵列基板101上，并且例如与显示移位寄存器电路190位于同一水平位置，由此在该实施例中阵列基板101为用于触控结构的衬底基板的一个示例。例如，触控移位寄存器电路210包括多个薄膜晶体管，显示移位寄存器电路190也包括 多个薄膜晶体管，触控移位寄存器电路210中的薄膜晶体管的各个膜层与显示移位寄存器电路190中的薄膜晶体管的各个膜层相对应，且对应的膜层位于同一层，也即是，触控移位寄存器电路210与显示移位寄存器电路190位于同一水平位置。薄膜封装层180具有第三过孔181。触控移位寄存器电路210通过第三过孔181与第一电极部分131电连接，从而可以向触控扫描电极130输出触控扫描信号TXn。
本实施例中，显示结构110和触控结构设置在衬底基板的同一侧，且触控结构相比于显示结构110更远离衬底基板。将触控移位寄存器电路210设置在显示结构110的阵列基板101上，可以降低对工艺温度的要求，有利于提高触控移位寄存器电路210的性能，且可以与显示移位寄存器电路190和像素电路150同时制作，减少了工艺步骤，降低了生产成本。需要说明的是，本公开的各实施例中，触控移位寄存器电路210在阵列基板101上的设置位置不受限制，可以根据实际需求确定。触控感应电极230、第一电极部分131和第二电极部分132的设置位置不受限制，可以根据实际需求确定。
图8为本公开一实施例提供的另一种触控面板的剖面示意图。参考图8，除了触控移位寄存器电路210、显示移位寄存器电路190、触控扫描连接线220和公共电极线200外，该实施例的触控面板与图7中描述的触控面板基本上相同。在该实施例中，触控面板还包括第一移位寄存器电路240。第一移位寄存器电路240设置在阵列基板101上，包括触控移位寄存器电路210和显示移位寄存器电路190。触控扫描连接线220设置在阵列基板101上(例如设置在阵列基板101上的第一绝缘层250上)，并与第一移位寄存器电路240中的触控移位寄存器电路210电连接。触控扫描连接线220的材料可以采用金属、透明导电材料或其他适用的材料。公共电极线200部分层叠地设置在触控扫描连接线220上且与触控扫描连接线220彼此绝缘(例如，公共电极线200设置在第二绝缘层260上)。薄膜封装层180具有第三过孔181。该第一移位寄存器电路中的触控扫描移位寄存器电路210通过触控扫描连接线220和第三过孔181与触控扫描电极130的第一电极部分131电连接，用于向触控扫描电极130输出触控扫描信号TXn。该第一移位寄存器电路240中的显示移位寄存器电路190例如通过扫描线(图中未示出)与像素电路150电连接，用于为阵列排布的子像素单元的像素电路150提供多个显示扫描信 号等。
需要说明的是，本公开的实施例中，第一移位寄存器电路240可以仅为一个常规的移位寄存器电路，该移位寄存器电路既用作显示移位寄存器电路190，又复用为触控移位寄存器电路210，也即是，显示移位寄存器电路190复用作为触控移位寄存器电路210。例如，将显示移位寄存器电路190输出的栅信号复用为触控移位寄存器电路210输出的触控扫描信号TXn。通过信号复用的方式，可以简化电路结构，提高可靠性。需要说明的是，本公开的各实施例中，显示移位寄存器电路190的输出信号的数量不受限制，可以被触控移位寄存器电路210复用的信号的种类也不受限制，可以选择任意信号进行复用。
图9为本公开一实施例提供的另一种触控面板的剖面示意图。参考图9，除了盖板102外，该实施例的触控面板与图6中描述的触控面板基本上相同。在该实施例中，显示结构110包括盖板102。盖板102设置在阴极层170上，主要作用包括保护、绝缘、支撑。盖板102的材料可为玻璃、塑料、陶瓷材料或其他适用的材料。例如，该触控面板还可以包括平坦层103，平坦层103覆盖阴极层170，盖板102设置在平坦层103上。触控移位寄存器电路210、触控扫描电极130和触控感应电极230设置在盖板102上，即在该实施例中盖板102为衬底基板的一个示例，显示结构110和触控结构设置在衬底基板的两侧。由于将触控移位寄存器电路210设置在盖板102上，可以降低对工艺温度的要求，有利于提高触控移位寄存器电路210的性能，并且不影响现有的显示结构的制作工艺。
在本公开的实施例中，显示结构110可以为OLED面板，该OLED面板的每个子像素单元的基本像素电路通常为2T1C像素电路，即利用两个TFT(薄膜晶体管)和一个存储电容Cs来实现驱动OLED发光的基本功能。图10A和图10B分别为两种2T1C像素电路的示意图。
如图10A所示，一种2T1C像素电路包括开关晶体管T0、驱动晶体管N0以及存储电容Cs。例如，该开关晶体管T0的栅极连接栅线(扫描线)以接收扫描信号Scan1，例如源极连接到数据线以接收数据信号Vdata，漏极连接到驱动晶体管N0的栅极；驱动晶体管N0的源极连接到第一电源端Vdd(例如高压端)，漏极连接到OLED的正极端；存储电容Cs的一端连接到 开关晶体管T0的漏极以及驱动晶体管N0的栅极，另一端连接到驱动晶体管N0的源极以及第一电源端Vdd；OLED的负极连接到第二电源端Vss(例如低压端)，例如接地。该2T1C像素电路的驱动方式是将像素的明暗(灰阶)经由两个TFT和存储电容Cs来控制。当通过栅线施加扫描信号Scan1以开启开关晶体管T0时，数据驱动电路通过数据线送入的数据电压(数据信号Vdata)将经由开关晶体管T0对存储电容Cs充电，由此将数据电压存储在存储电容Cs中，且此存储的数据电压控制驱动晶体管N0的导通程度，由此控制流过驱动晶体管N0以驱动OLED发光的电流大小，即此电流决定该像素发光的灰阶。在图10A所示的2T1C像素电路中，开关晶体管T0为N型晶体管而驱动晶体管N0为P型晶体管。
如图10B所示，另一种2T1C像素电路也包括开关晶体管T0、驱动晶体管N0以及存储电容Cs，但是其连接方式略有改变，且驱动晶体管N0为N型晶体管。图10B的像素电路相对于图10A的变化之处包括：OLED的正极端连接到第一电源端Vdd(例如高压端)而负极端连接到驱动晶体管N0的漏极，驱动晶体管N0的源极连接到第二电源端Vss(例如低压端)，例如接地。存储电容Cs的一端连接到开关晶体管T0的漏极以及驱动晶体管N0的栅极，另一端连接到驱动晶体管N0的源极以及第二电源端Vss。该2T1C像素电路的工作方式与图10A所示的像素电路基本相同，这里不再赘述。
此外，对于图10A和图10B所示的像素电路，开关晶体管T0不限于N型晶体管，也可以为P型晶体管，由此控制其导通或截止的扫描信号Scan1的极性进行相应地改变即可。
像素电路在上述2T1C的基本像素电路的基础上还可以包括其他具有补偿功能的电路结构。补偿功能可以通过电压补偿、电流补偿或混合补偿来实现，具有补偿功能的像素电路例如可以为4T1C或4T2C等。例如，在具有补偿功能的像素电路中，数据写入电路和补偿电路配合将携带有数据电压以及驱动晶体管的阈值电压信息的电压值写入到驱动晶体管的控制极且通过电压存储电路存储。具体的补偿电路的示例，这里不再详述。
本公开至少一实施例还提供一种触控设备，该触控设备包括本公开任一实施例所述的触控面板。该触控设备可以缩短触控移位寄存器电路与触控扫描电极之间的引线的长度，减少触控驱动器与触控面板之间的引线数量，解 决引线受到侧边信号干扰而负载增大和引线长度不同造成的负载不同的问题，能够提高检测精度，降低对驱动信号的要求，且包括显示结构的至少一个实施例可以降低对边框设计的影响，有利于实现触控与显示驱动集成和窄边框设计。
图11为本公开一实施例提供的一种触控设备的外观示意图。参考图11，该触控设备为电视机300。电视机300包括触控面板301。触控面板301为本公开任一实施例提供的具有显示结构的触控面板。触控面板301既能根据影像信号进行显示，又能进行触控检测。
需要说明的是，本公开的各实施例中，触控设备不局限于电视机300，还可以是手机、平板电脑、笔记本电脑、电子书、游戏机、显示器、数码相框、导航仪等任何具有触控功能的产品或部件。触控面板301的集成位置不受限制，可以集成在触控设备的正面、侧面或者其他适用的位置上。
本公开至少一实施例还提供一种制造触控面板的方法，该方法包括在衬底基板上形成触控移位寄存器电路和触控结构。所述触控结构包括触控扫描电极和触控感应电极，所述触控扫描电极沿第一方向设置在所述衬底基板上，所述触控感应电极沿第二方向设置在所述衬底基板上，所述第一方向与所述第二方向相交叉，所述触控移位寄存器电路与所述触控扫描电极电连接。该方法可制造如上所述任一实施例的触控面板，可以解决触控扫描信号的引线受到侧边信号干扰而负载增大和引线长度不同造成的负载不同的问题，能够提高检测精度，降低对驱动信号的要求，且包括显示结构的至少一个实施例可以降低对边框设计的影响，有利于实现触控与显示驱动集成和窄边框设计。
通过该方法，触控移位寄存器电路和触控结构的制作顺序不受限制。例如，在一个实施例的示例中，先开始在衬底基板上制作触控移位寄存器电路，然后再在衬底基板上制作触控结构。例如，在另一个实施例的示例中，可以将触控移位寄存器电路和触控结构同时制作。需要说明的是，本公开的各实施例中，制造触控面板的方法不局限于上面描述的步骤和顺序，还可以包括更多的步骤，各个步骤之间的顺序可以根据实际需求确定。例如，制造触控面板的方法还可以包括在衬底基板上形成显示结构的步骤。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。

Claims (17)

  1. 一种触控面板，包括：
    衬底基板；
    触控结构，所述触控结构包括：
    触控扫描电极，沿第一方向设置在所述衬底基板上；以及
    触控感应电极，沿第二方向设置在所述衬底基板上，其中，所述第一方向与所述第二方向相交叉；
    触控移位寄存器电路，设置在所述衬底基板上且与所述触控扫描电极电连接，配置为向所述触控扫描电极提供触控扫描信号。
  2. 根据权利要求1所述的触控面板，其中，所述触控扫描电极包括多个第一电极部分和多个第二电极部分，
    所述第一电极部分与所述触控感应电极位于同一层，所述第二电极部分位于不同层且构成连接相邻的第一电极部分的桥接部分，以使得所述触控扫描电极越过与所述触控扫描电极交叉的触控感应电极。
  3. 根据权利要求2所述的触控面板，其中，所述触控移位寄存器电路包括至少一个薄膜晶体管，
    所述薄膜晶体管的源极和漏极与所述触控扫描电极的第一部分位于同一层，所述薄膜晶体管的栅极与所述触控扫描电极的第二电极部分位于同一层。
  4. 根据权利要求3所述的触控面板，其中，所述第一电极部分相比于所述第二电极部分更远离所述衬底基板。
  5. 根据权利要求1-4任一所述的触控面板，还包括显示结构，其中，所述显示结构与所述触控结构在垂直于所述触控面板板面的方向上层叠设置。
  6. 根据权利要求5所述的触控面板，其中，所述显示结构和所述触控结构设置在所述衬底基板的同一侧，且所述触控结构相比于所述显示结构更远离所述衬底基板。
  7. 根据权利要求5或6所述的触控面板，还包括薄膜封装层，其中，所述薄膜封装层设置在所述显示结构上，所述触控结构设置在所述薄膜封装层上。
  8. 根据权利要求7所述的触控面板，其中，所述触控移位寄存器电路设 置在所述薄膜封装层上。
  9. 根据权利要求7所述的触控面板，其中，所述显示结构包括阵列基板，所述阵列基板作为所述衬底基板，所述触控移位寄存器电路设置在所述阵列基板上。
  10. 根据权利要求9所述的触控面板，其中，所述薄膜封装层具有过孔，所述触控移位寄存器电路由所述薄膜封装层覆盖，且通过所述薄膜封装层中的过孔与所述触控扫描电极电连接。
  11. 根据权利要求10所述的触控面板，其中，所述显示结构还包括显示移位寄存器电路，所述触控移位寄存器电路与所述显示移位寄存器电路并列设置在所述阵列基板上。
  12. 根据权利要求11所述的触控面板，其中，所述显示结构还包括公共电极线，所述公共电极线设置在所述阵列基板上。
  13. 根据权利要求9所述的触控面板，还包括第一移位寄存器电路，
    其中，所述显示结构还包括显示移位寄存器电路，所述第一移位寄存器电路包括所述触控移位寄存器电路和所述显示移位寄存器电路，所述阵列基板上设置有触控扫描连接线，所述薄膜封装层具有过孔，所述触控移位寄存器电路通过所述触控扫描连接线和所述薄膜封装层中的过孔与所述触控扫描电极电连接。
  14. 根据权利要求5所述的触控面板，其中，所述显示结构包括盖板，所述盖板作为所述衬底基板，所述显示结构和所述触控结构设置在所述盖板的两侧。
  15. 根据权利要求5-14任一所述的触控面板，其中，所述显示结构包括电致发光显示阵列。
  16. 一种触控设备，包括根据权利要求1-15任一所述的触控面板。
  17. 一种制造触控面板的方法，包括：
    在衬底基板上形成触控移位寄存器电路和触控结构；
    其中，所述触控结构包括触控扫描电极和触控感应电极，所述触控扫描电极沿第一方向设置在所述衬底基板上，所述触控感应电极沿第二方向设置在所述衬底基板上，所述第一方向与所述第二方向相交叉，所述触控移位寄存器电路与所述触控扫描电极电连接。
PCT/CN2018/105746 2017-12-01 2018-09-14 触控面板、触控设备和制造触控面板的方法 WO2019105102A1 (zh)

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