WO2017222151A1 - Epoxy resin composition for sealing solid state semiconductor device, encapsulating material comprising same, and semiconductor package - Google Patents

Abstract

The present invention relates to: a resin composition for sealing a solid state semiconductor device, comprising an epoxy resin containing a compound represented by chemical formula 1, a curing agent, and an inorganic filler; an encapsulating material comprising the same; and a semiconductor package. The resin composition for sealing a semiconductor device has a low coefficient of thermal expansion and a high glass transition temperature, thereby enabling warpage to be minimized.

Description

Epoxy resin composition for sealing solid-state semiconductor device, encapsulant and semiconductor package comprising same

The present invention relates to an epoxy resin composition for semiconductor encapsulation, an encapsulant and a semiconductor package including the same. More specifically, the present invention relates to an epoxy resin composition for sealing a solid phase semiconductor, which can minimize warpage due to a low coefficient of thermal expansion and a high glass transition temperature, and an encapsulant and a semiconductor package including the same.

The method of sealing a semiconductor element with an epoxy resin composition is commercially performed for the purpose of protecting a semiconductor element from external environments, such as moisture or a mechanical shock. Conventionally, semiconductor chips are manufactured by cutting a wafer to manufacture semiconductor chips, and then packaging is performed in units of semiconductor chips, but packaging is performed in a wafer state not recently cut, and then semiconductor chips. A process of cutting with a has been developed. In general, the former method is called Chip Scale Package (CSP) and the latter process is called Wafer Level Packaging (WLP).

Wafer-level packaging has advantages in that the process is simpler than the chip scale packaging process, and the package thickness is reduced, thereby reducing the semiconductor mounting space. However, the wafer level packaging has a problem in that warpage due to the difference in thermal expansion rate between the wafer and the encapsulant is large because the film forming area is larger than that of the chip scale packaging for sealing the individual chips. If warping occurs, it will affect the yield and wafer handling of subsequent processes. In addition, liquid type epoxy resin or silicone resin is mainly used as an encapsulant for wafer level packaging. However, these encapsulants have poor storage stability, which is poor in storageability, impossible to re-storage after aging, and a filler content in the composition. When applied to wafer-level packaging, which is implemented to have a relatively low thickness, a problem of low durability and reliability is low.

Therefore, there is a need to develop a composition for sealing a semiconductor device capable of less warpage, easy storage and use, and excellent durability even when applying wafer level packaging.

Related prior art is disclosed in Korea Patent Publication No. 2014-0064638.

It is an object of the present invention to provide an epoxy resin composition for semiconductor encapsulation that can minimize warpage due to low thermal expansion coefficient and high glass transition temperature.

Another object of the present invention is to provide an epoxy resin composition for solid-state particulate semiconductor sealing, which can realize excellent durability even when applied to wafer level packaging, and is easy to store and use.

Still another object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation having excellent adhesion to a redistribution layer (RDL).

Still another object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation, which can realize excellent reliability with low moisture absorption.

Still another object of the present invention is to provide an encapsulant and a semiconductor package including the epoxy resin composition for semiconductor encapsulation as described above.

One aspect of the present invention relates to a resin composition for sealing a solid state semiconductor element. The solid-state semiconductor element sealing resin composition is an epoxy resin containing a compound represented by the formula (1); Curing agent; And inorganic fillers.

[Formula 1]

In Formula 1, R1 to R12 are each independently hydrogen, a substituent containing a nitrogen atom, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C3-C30 A heteroaryl group, a substituted or unsubstituted C3-C10 heterocycloalkyl group, a substituted or unsubstituted C7-C30 arylalkyl group, or a substituted or unsubstituted C1-C30 heteroalkyl group, at least one of the above R1 to R12 At least one is a substituted or unsubstituted C 6 -C 30 aryl group or a substituent containing a nitrogen atom.

In an embodiment, the substituent containing a nitrogen atom may be selected from an isocyanate group (-N = C = O), a cyano group, a nitro group, an amino group, an amine group, a C3-C30 heteroaryl group or nitrogen atom including a nitrogen atom. It may be a C3-C10 heterocycloalkyl group containing.

In embodiments, the C6 ~ C30 aryl group may be a phenyl group, biphenyl group, naphthyl group, naphthol group, or anthracenyl group.

In an embodiment, the epoxy resin may include at least one or more of the compounds represented by Formulas 1a to 1d.

[Formula 1a]

[Formula 1b]

[Formula 1c]

[Formula 1d]

In embodiments, the composition may comprise about 0.1 to about 15 weight percent of the epoxy resin, about 0.1 to about 13 weight percent of the curing agent and about 70 to about 95 weight percent of the inorganic filler.

Another aspect of the invention relates to an encapsulant. The encapsulant includes the resin composition for sealing the solid-state semiconductor element.

In an embodiment, the encapsulant may be tablet type, film type or sheet type.

Another aspect of the invention relates to a semiconductor package.

In one embodiment, the semiconductor package comprises a substrate; A semiconductor device mounted on the substrate; A sealing layer formed on the substrate to encapsulate at least a portion of the semiconductor device; And a connection terminal formed under the substrate, wherein the sealing layer includes the resin composition for sealing the solid-state semiconductor element.

In embodiments, the substrate may be a circuit board, a lead frame substrate or a substrate including a redistribution layer.

In an embodiment, the semiconductor device may be one in which a plurality of semiconductor chips are electrically stacked through a through silicon via (TSV).

In another embodiment, the semiconductor package includes a substrate including a redistribution layer; A semiconductor device disposed on the redistribution layer; A sealing layer formed on the redistribution layer to seal at least a portion of the semiconductor device; And a connection terminal formed under the substrate, wherein the sealing layer includes the resin composition for sealing the solid-state semiconductor element.

In yet another embodiment, the semiconductor package comprises a substrate; A semiconductor device mounted on the substrate through an adhesive member, wherein a plurality of semiconductor chips are electrically stacked through a through silicon via (TSV); A connection terminal is formed below the substrate, and the sealing layer includes the resin composition for sealing the solid-state semiconductor device.

The present invention has a low coefficient of thermal expansion, high glass transition temperature to minimize warpage, excellent durability even when applied to wafer level packaging, and is easy to store and use in a solid rather than liquid form. , The effect of the invention to provide an epoxy resin composition for sealing a semiconductor and an encapsulant and a semiconductor package including the same, which has excellent adhesion to a re-distribution layer (RDL), low moisture absorption rate and can implement excellent reliability Have

1 is a view schematically showing an embodiment of a semiconductor package according to the present invention.

2 is a view schematically showing another embodiment of a semiconductor package according to the present invention.

Hereinafter, with reference to the accompanying drawings will be described the present invention in more detail. However, the following drawings are provided only to assist in understanding the present invention, and the present invention is not limited by the following drawings.

In addition, the shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings are exemplary, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that the detailed description of the related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

In the present specification, when 'comprises', 'haves', 'consists of' and the like are used, other parts may be added unless 'only' is used. In the case where the component is expressed in the singular, the plural includes the plural unless specifically stated otherwise.

In interpreting a component, it is interpreted to include an error range even if there is no separate description.

If the positional relationship between the two parts is described as 'upper', 'upper', 'lower', 'beside', etc., the two parts are not used unless 'right' or 'direct' is used. One or more other parts may be located in the.

Positional relationships such as 'top', 'top', 'bottom', and 'bottom' are described based on the drawings and do not represent absolute positional relationships. That is, the positions of the 'top' and 'bottom' or 'top' and 'bottom' may be changed depending on the position to be observed.

In this specification, "substituted" in "substituted or unsubstituted" means that at least one hydrogen atom of the functional group is a hydroxyl group, a halogen, an amino group, a nitro group, a cyano group, a carboxyl group, a C1-C20 alkyl group, a C1-C20 Alkenyl group, C1-C20 alkynyl group, C1-C20 haloalkyl group, C6-C30 aryl group, C3-C30 heteroaryl group, C3-C10 cycloalkyl group, C3-C10 heterocycloalkyl group, C7-C30 An arylalkyl group, C1 ~ C30 It is substituted with a heteroalkyl group, "halogen" means fluorine, chlorine, iodine or bromine.

As used herein, "aryl group" means a substituent in which all elements of a cyclic substituent have p-orbital and p-orbital forms a conjugate, and a single ring structure or two or more rings are fused. It includes a multi-ring structure, for example, it may mean a phenyl group, biphenyl group, naphthyl group, naphthol group, anthracenyl group and the like, but is not limited thereto.

In the present specification, the "heteroaryl group" means one to three atoms selected from the group consisting of nitrogen, oxygen, sulfur and phosphorus in the aryl group of C6 to C30 and the rest are carbon, for example, Dinyl, pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, quinoxalinyl, acridinyl, quinazolinyl, cshinolinyl, phthalazinyl, thiazolyl, benzothia Zolyl, isoxazolyl, benzisoxazolyl, oxazolyl, benzoxazolyl, pyrazolyl, indazolyl, imidazolyl, benzimidazolyl, furinyl, thiophenyl, benzothiophenyl, furanyl, benzofuranyl, iso Benzofuranyl, and the like, but is not limited thereto.

In the present specification, 'hetero' in the 'heterocycloalkyl group', 'heteroaryl group', 'heterocycloalkylene group', and 'heteroarylene group' means nitrogen, oxygen, sulfur or phosphorus atoms.

In addition, in this specification, "X-Y" which shows a range means "X or more and Y or less."

Epoxy resin composition

First, the epoxy resin composition for semiconductor sealing which concerns on this invention is demonstrated.

The epoxy resin composition of this invention contains (A) epoxy resin, (B) hardening | curing agent, and (C) inorganic filler.

(A) epoxy resin

The epoxy resin used in the present invention includes an alicyclic epoxy compound represented by the following formula (1).

[Formula 1]

In Formula 1, R1 to R12 (R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11 and R12) are each independently a substituent containing a hydrogen, a nitrogen atom, substituted or unsubstituted C1 ~ C20 alkyl group, substituted or unsubstituted C6 ~ C30 aryl group, substituted or unsubstituted C3 ~ C30 heteroaryl group, substituted or unsubstituted C3 ~ C10 heterocycloalkyl group, substituted or unsubstituted C7 ~ C30 is an arylalkyl group or a substituted or unsubstituted C1-C30 heteroalkyl group, and at least one of R1 to R12 is a substituted or unsubstituted C6 to C30 aryl group or a substituent containing a nitrogen atom.

The substituent containing the said nitrogen atom is C3-C30 heteroaryl group or nitrogen atom containing an isocyanate group (-N = C = O), a cyano group, a nitro group, an amino group, an amine group, and a nitrogen atom, for example. It may be a C3-C10 heterocycloalkyl group containing, preferably, isocyanate group, cyano group, nitro group, amino group or amine group.

The C6 to C30 aryl group may be a phenyl group, biphenyl group, naphthyl group, naphthol group or anthracenyl group.

Since the compound having an alicyclic epoxy structure as shown in Formula 1 has a high coefficient of thermal expansion and a high glass transition temperature, it is possible to effectively suppress warpage of a semiconductor package by using an epoxy resin to which the compound is applied.

In addition, when the compound having an alicyclic epoxy structure as shown in Formula 1 and containing a substituent containing a nitrogen atom as the epoxy resin, it is possible to excellently implement the adhesive force with the redistribution layer (Re-Distribution Layer, RDL). . In the wafer level packaging process, the semiconductor device is sealed on the carrier wafer to facilitate packaging of the input / output terminals, the carrier wafer is removed, and the sealed semiconductor device is formed on the substrate on which the dielectric and metal layers are alternately stacked. A method of relocating on (Re-Distribution Layer, RDL) is used. In this case, since the redistribution layer (RDL) is formed by using a negative photoresist such as polybenzoazole, the adhesion force between the epoxy resin and the redistribution layer when a substituent containing a nitrogen atom is included in the epoxy resin. This improved effect can be obtained.

In addition, when the compound having an alicyclic epoxy structure as shown in the general formula (1) and containing a C6 ~ C30 aryl group as the epoxy resin, it is possible to obtain the effect of improving the moisture absorption of the epoxy resin. In general, in the case of an alicyclic epoxy compound, there is a problem that the moisture absorption is high and the reliability of the semiconductor after packaging is somewhat lowered. However, when the C6-C30 aryl group is included as a substituent in the alicyclic epoxy structure as in the present invention, the moisture absorption rate is lowered, thereby improving reliability.

In an embodiment, the epoxy resin may include at least one or more of the compounds represented by Formulas 1a to 1d.

[Formula 1a]

[Formula 1b]

[Formula 1c]

[Formula 1d]

In one embodiment, the epoxy resin comprising the compound represented by Formula 1 is about 0.1 to about 15% by weight of the epoxy resin composition for sealing semiconductor devices, for example about 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7 , 0.8, 0.9, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14 or 15% by weight, one or more of the above values and a range below one of the above values It may be included as. It may also be included in an amount of about 3 to about 15 weight percent, more specifically about 3 to about 12 weight percent.

(B) curing agent

As the curing agent, curing agents generally used for sealing semiconductor devices may be used without limitation, and preferably, curing agents having two or more reactors may be used.

Specifically, as the curing agent, a phenol aralkyl type phenol resin, a phenol phenol novolak type phenol resin, a xylok type phenol resin, a cresol novolak type phenol resin, a naphthol type phenol resin, a terpene type phenol resin, a polyfunctional type Phenol resins, dicyclopentadiene phenol resins, polyhydric phenol compounds including novolac-type phenol resins synthesized from bisphenol A and resol, tris (hydroxyphenyl) methane, dihydroxybiphenyl, maleic anhydride and phthalic anhydride Aromatic amines such as acid anhydride, metaphenylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone, and the like may be used, but are not limited thereto.

For example, the curing agent may include one or more of phenol novolak-type phenol resin, xylox phenol resin, phenol aralkyl type phenol resin, and polyfunctional phenol resin.

The phenol novolak type phenol resin may be, for example, a phenol novolak type phenol resin represented by the following formula (2).

[Formula 2]

In Formula 2, the average value of d is 1 to 7.

The phenol novolak-type phenolic resin represented by Chemical Formula 2 has a short crosslinking point spacing, and when reacted with an epoxy resin, the crosslinking density becomes high, thereby increasing the glass transition temperature of the cured product, thereby lowering the coefficient of linear expansion of the cured product. The warpage of the package can be more effectively suppressed.

The phenol aralkyl type phenol resin may be, for example, a phenol aralkyl type phenol resin having a novolak structure containing a biphenyl derivative in a molecule represented by the following formula (3).

[Formula 3]

In Formula 3, the average value of e is 1 to 7.

The phenol aralkyl type phenol resin represented by Chemical Formula 3 forms a carbon layer (char) by reacting with the epoxy resin to block the transfer of heat and oxygen in the surroundings to achieve flame retardancy.

In addition, the "Xylox type phenol resin" may be, for example, "xylok" type phenol resin represented by the following formula (4).

[Formula 4]

In Formula 4, the average value of f is 0 to 7.

The xylox phenol resin represented by the formula (4) is preferable in view of fluidity and reliability strengthening of the resin composition.

The polyfunctional phenol resin may be, for example, a polyfunctional phenol resin containing a repeating unit represented by the following formula (5).

[Formula 5]

In Formula 5, the average value of g is 1 to 7.

The polyfunctional phenol resin containing the repeating unit represented by the formula (5) is preferable in view of enhancing the high temperature bending characteristics of the epoxy resin composition.

These curing agents may be used alone or in combination. Moreover, the addition agent which made the said hardening agent and other components, such as an epoxy resin, a hardening accelerator, a mold release agent, a coupling agent, and a stress relaxation agent, pre-reacts, such as a melt master batch, can also be used as a compound.

In embodiments, the curing agent is about 0.1 to about 13% by weight of the epoxy resin composition for sealing the semiconductor device, for example about 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 2, 3 , 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13% by weight, may be included in the range of one or more of the above values and one or less of the above values. It may also be included in an amount of about 0.1 to about 10% by weight, more specifically about 0.1 to about 8% by weight.

The blending ratio of the epoxy resin and the curing agent may be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package. For example, the chemical equivalent ratio of the epoxy resin to the curing agent may be about 0.95 to about 3, specifically about 1 to about 2, more specifically about 1 to about 1.75. When the compounding ratio of the epoxy resin and the curing agent satisfies the above range, it is possible to implement excellent strength after curing the epoxy resin composition.

Inorganic filler

The inorganic filler is for improving the mechanical properties and low stress of the epoxy resin composition. As the inorganic filler, general inorganic fillers used in semiconductor sealing materials can be used without limitation, and are not particularly limited. For example, as the inorganic filler, fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. may be used. Can be. These may be used alone or in combination.

Preferably, molten silica having a low coefficient of linear expansion is used to reduce stress. Fused silica refers to amorphous silica having a specific gravity of about 2.3 or less, and also includes amorphous silica made by melting crystalline silica or synthesized from various raw materials. The shape and particle diameter of the molten silica are not particularly limited, but about 1 to about spherical molten silica having a spherical molten silica having an average particle diameter of about 5 to about 30 μm, and an average particle diameter of about 0.001 to about 1 μm. Preferably, the molten silica mixture, including about 50% by weight, is included from about 40% to about 100% by weight of the total filler. Moreover, according to a use, the maximum particle diameter can be adjusted to any one of about 45 micrometers, about 55 micrometers, and about 75 micrometers, and can be used. In the spherical molten silica, conductive carbon may be included as a foreign material on the silica surface, but it is also important to select a material containing less polar foreign matter.

The amount of the inorganic filler used depends on the required physical properties such as formability, low stress, and high temperature strength. In an embodiment, the inorganic filler is about 70 to about 95 weight percent of the epoxy resin composition, for example about 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94 or 95% by weight, may be included in the range of one or more of the above values and one or less of the above values. It may also specifically comprise about 80 to about 90% by weight or about 83 to about 97% by weight.

Other ingredients

Meanwhile, in addition to the above components, the epoxy resin composition according to the present invention may further include one or more of a curing accelerator, a coupling agent, a mold releasing agent, and a coloring agent.

Curing accelerator

A hardening accelerator is a substance which accelerates reaction of an epoxy resin and a hardening | curing agent. As said hardening accelerator, a tertiary amine, an organometallic compound, an organophosphorus compound, an imidazole, a boron compound, etc. can be used, for example. Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris (diaminomethyl ) Phenol and tri-2-ethylhexyl acid salt.

Specific examples of the organometallic compound include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphate And pin-1,4-benzoquinones adducts. The imidazoles include 2-phenyl-4methylimidazole, 2-methylimidazole, # 2-phenylimidazole, # 2-aminoimidazole, 2-methyl-1-vinylimidazole, and 2-ethyl-4. -Methylimidazole, 2-heptadecylimidazole, and the like, but are not limited thereto. Specific examples of the boron compound include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoro Roboranetriethylamine, tetrafluoroboraneamine, and the like. In addition, 1, 5- diazabicyclo [4.3.0] non-5-ene (1, 5- diazabicyclo [4.3.0] non-5-ene: DBN), 1, 8- diazabicyclo [5.4. 0] undec-7-ene (1,8-diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolak resin salts, and the like.

More specifically, an organophosphorus compound, a boron compound, an amine type, or an imidazole series hardening accelerator can be used individually or in mixture as said hardening accelerator. The curing accelerator may also use an epoxy resin or an adduct made by preliminary reaction with a curing agent.

The amount of the curing accelerator used in the present invention may be about 0.01 to about 2% by weight, specifically about 0.02 to about 1.5% by weight, and more specifically about 0.05 to about 1% by weight, based on the total weight of the epoxy resin composition. In the above range, there is an advantage that the curing of the epoxy resin composition is promoted and the degree of curing is also good.

Coupling agent

The coupling agent is for improving the interfacial strength by reacting between the epoxy resin and the inorganic filler. For example, the coupling agent may be a silane coupling agent. The said silane coupling agent may react between an epoxy resin and an inorganic filler, and what is necessary is just to improve the interface strength of an epoxy resin and an inorganic filler, The kind is not specifically limited. Specific examples of the silane coupling agent include epoxysilane, aminosilane, ureidosilane, mercaptosilane, and the like. The coupling agents may be used alone or in combination.

The coupling agent may be included in an amount of about 0.01 to about 5 wt%, specifically about 0.05 to about 3 wt%, more specifically about 0.1 to about 2 wt%, based on the total weight of the epoxy resin composition. In the above range, the strength of the cured epoxy resin composition may be improved.

Release agent

The release agent may be used at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt.

The release agent may be included in about 0.1 to about 1% by weight of the epoxy resin composition.

coloring agent

The colorant is for laser marking of the semiconductor device sealant, and colorants well known in the art may be used, and are not particularly limited. For example, the colorant may include one or more of carbon black, titanium black, titanium nitride, copper hydroxide phosphate, iron oxide, and mica.

The colorant may be included in an amount of about 0.01 to about 5 wt%, specifically about 0.05 to about 3 wt%, more specifically about 0.1 to about 2 wt%, based on the total weight of the epoxy resin composition.

In addition, the epoxy resin composition of the present invention may be selected from the group consisting of stress relieving agents such as modified silicone oil, silicone powder, and silicone resin within the scope of not impairing the object of the present invention; Antioxidants such as Tetrakis [methylene-3- (3,5-di-tertbutyl-4-hydroxyphenyl) propionate] methane; And the like may be further added as necessary.

On the other hand, the epoxy resin composition is uniformly sufficiently mixed with the above components at a predetermined mixing ratio using a Henschel mixer or Lodige mixer, and then roll-mill or kneader ( After kneading with a kneader), it can be prepared in the form of a solid powder through cooling and grinding.

Since the epoxy resin composition of the present invention is in a solid state, the storage stability is higher than that of the liquid epoxy resin composition, so that storage and transporting are easy. In addition, it is possible to re-storage after aging to prevent waste of material. In addition, the content of the inorganic filler is higher than the liquid epoxy resin, it is excellent in durability and reliability.

In addition, since the epoxy resin composition of the present invention uses an alicyclic epoxy resin having a low thermal expansion coefficient and a high glass transition temperature as the epoxy resin, warpage generation of the semiconductor package can be minimized.

Encapsulant

This invention provides the sealing material containing the resin composition for semiconductor element sealing of this invention as mentioned above. The sealing material of this invention only needs to contain the resin composition for semiconductor element sealing of above-mentioned this invention, and the kind in particular is not restrict | limited. For example, the encapsulant may be a variety of encapsulation materials commonly used in the art, such as granule encapsulation, tablet encapsulation, film encapsulation, or sheet. It may be a (sheet) -type encapsulant. In this case, the film encapsulant means a film-type encapsulant that is flexible enough to be wound on a winding roll, and the sheet encapsulant means an encapsulant that cannot be wound on a roll because it is relatively hard as compared to the film encapsulant. do.

The encapsulant of the present invention has less warpage than the encapsulant for semiconductor encapsulation, which can be used in the wafer level packaging process.

Semiconductor package

Next, a semiconductor package according to the present invention will be described. 1 and 2 illustrate embodiments of a semiconductor package according to the present invention.

1 and 2, the semiconductor packages 100 and 200 of the present invention may include the substrates 110 and 210, the semiconductor elements 120 and 220, the sealing layers 130 and 230, and the connection terminals 140. 240).

Board

The substrates 110 and 210 support the semiconductor devices 120 and 220 and provide electrical signals to the semiconductor devices 120 and 220, and the semiconductor mounting substrates generally used in the art are not limited. Can be used. For example, the substrates 110 and 210 may be a circuit board, a lead frame substrate, or a substrate including a redistribution layer.

The circuit board may be made of an insulating material, for example, a flat plate to which a heat-curable film such as an epoxy resin or a polyimide is attached, or a heat-resistant organic film such as a liquid crystal polyester film or a polyamide film. A circuit pattern is formed on the circuit board, and the circuit pattern includes a power line for supplying power, a ground line, a signal line for signal transmission, and the like. Each of the wires may be separated from each other by an interlayer insulating layer. Specifically, the circuit board may be a printed circuit board (PCB) in which a circuit pattern is formed by a printing process.

The lead frame substrate may be made of a metal material such as nickel, iron, copper, nickel alloy, iron alloy, copper alloy, or the like. The lead frame substrate may include a semiconductor chip mounting part for mounting a semiconductor chip and a connection terminal part electrically connected to an electrode part of the semiconductor chip. However, the lead frame substrate is not limited thereto, and leads of various structures and materials known in the art may be used. Frame substrates can be used without limitation.

As shown in FIG. 1, the substrate including the redistribution layer may include a redistribution layer (RDL) 113 at an outermost layer of the laminate in which the dielectric layer 111 and the metal layer 112 are alternately stacked. This is a formed substrate. The dielectric layer 111 may be made of, for example, photosensitive polyimide, and the metal layer 112 may be made of, for example, copper. Without being limited thereto, dielectric layers and metal layers of various materials used in the art may be used without limitation. In addition, the redistribution layer 113 may include, for example, a photoresist such as polybenzoazole, but is not limited thereto. Various redistribution layer forming materials used in the art may be used without limitation.

Semiconductor device

The semiconductor devices 120 and 220 are mounted on the substrates 110 and 210. In this case, the semiconductor device mounting method is not particularly limited, and semiconductor chip mounting techniques known in the art may be used without limitation. For example, the semiconductor device may be mounted on a substrate by a flip chip or a wire bonding method.

In the flip chip method, a bump is formed on a bottom surface of a semiconductor chip, and a semiconductor device is fused to a circuit board using the bump. When the semiconductor chip is mounted in a flip chip method, an additional connection structure such as a wire is not required, which is advantageous in miniaturization and light weight of the semiconductor package, and has a merit of high integration since the distance between electrodes can be reduced.

The wire bonding method is a method of electrically connecting an electrode portion of a semiconductor device and a substrate with a metal wire. When the semiconductor chip is mounted by a wire bonding method, as illustrated in FIG. 2, an adhesive member 250, such as a die bonding film, may be interposed between the semiconductor device 220 and the substrate 210. The semiconductor device 220 is fixed on the substrate 210 by 250.

Meanwhile, the semiconductor device may be formed of one semiconductor chip or may include a plurality of semiconductor chips. For example, as illustrated in FIG. 2, the semiconductor device may be a stacked semiconductor device in which a plurality of semiconductor chips 222 are electrically stacked through a through silicon via (TSV) 224. Can be.

Sealing layer

The sealing layers 130 and 230 are for protecting the semiconductor devices 120 and 220 from the external environment, and include the epoxy resin composition according to the present invention. Since the epoxy resin composition has been described above, a detailed description thereof will be omitted.

The sealing layer is formed to encapsulate at least a portion of the semiconductor device on the substrate. 1 and 2, the sealing layer is illustrated as encapsulating the side surface of the semiconductor device, but is not limited thereto. That is, the sealing layer may be formed so as to seal both the side surface and the upper surface of the semiconductor device.

Connection terminal

Connection terminals 140 and 240 for electrically connecting the substrates 110 and 210 and an external power source are formed on the lower surfaces of the substrates 110 and 210, that is, opposite surfaces on which the semiconductor devices are mounted. The connection terminal may be any of various connection terminals well known in the art, for example, a lead, a ball grid array, and the like, without limitation.

According to one embodiment, the semiconductor package according to the present invention, as shown in Figure 1, the substrate 110 including a redistribution layer (113), and on the redistribution layer 113 A semiconductor device 120 disposed, a sealing layer 130 formed on the redistribution layer 113 and encapsulating at least a portion of the semiconductor device 120, and a connection terminal formed under the substrate 110. 140 may be included. At this time, the sealing layer comprises an epoxy resin composition according to the present invention.

According to another embodiment, the semiconductor package according to the present invention, as shown in Figure 2, is mounted on the substrate 210, the adhesive member 250 on the substrate 210, a plurality of semiconductor chips ( 222 may include a semiconductor device 220 that is electrically stacked through a through silicon via (TSV) 224, and a connection terminal 240 formed under the substrate 210. have. At this time, the sealing layer comprises an epoxy resin composition according to the present invention.

Hereinafter, the configuration and operation of the present invention through the preferred embodiment of the present invention will be described in more detail. However, this is presented as a preferred example of the present invention and in no sense can be construed as limiting the present invention.

Details that are not described herein will be omitted since those skilled in the art can sufficiently infer technically.

Specifications of each component used in the following Examples and Comparative Examples are as follows.

(A) epoxy resin

(a1) The compound of Formula 1a was used.

[Formula 1a]

(a2) The compound of Formula 1b was used.

[Formula 1b]

(a3) The compound of Formula 1c was used.

[Formula 1c]

(a4) The compound of Formula 1d was used.

[Formula 1d]

(a5) NC-3000 from Nippon Gunpowder was used.

(a6) Japan Epoxy Resin YX-4000 was used.

(B) curing agent

(b1) KPH-F3065 from Kolon Emulsifier was used.

(b2) MEH-7851 from Maywa was used.

(C) curing accelerator

(C1) TPP-k (triphenylphosphine) from Hokko Chemical was used.

(C2) 1,4-benzoquinone of Aldrich Corporation was used.

(D) inorganic filler

A 9: 1 (weight ratio) mixture of spherical molten silica having an average particle diameter of 20 µm and spherical molten silica having an average particle diameter of 0.5 µm was used.

(E) coupling agent

(e1) SZ-6070, a methyltrimethoxy silane coupling agent from Dow Corning, was used.

(e2) KBM-573, a Shin-Etsu N-phenyl-3-aminopropyltrimethoxy silane coupling agent, was used.

(F) colorant

Mitsubishi Chemical's carbon black MA-600B was used.

Example  1 to 5 and Comparative example  1 to 2

According to the composition of Table 1 below. After mixing uniformly for 30 minutes at 25 ~ 30 ℃ using a Henschel mixer (KEUM SUNG MACHINERY CO.LTD (KSM-22)), the Max. After melt kneading at 110 ° C. for 30 minutes, the mixture was cooled and ground to 10 to 15 ° C. to prepare an epoxy resin composition for sealing semiconductor elements. Then, 4.5 g of the epoxy resin composition was taken and put into a tablet manufacturing facility, and then pressed under a weight of 12 tons to prepare a tablet-type encapsulant having an outer diameter of Φ14 (mm).

		Example 1	Example 2	Example 3	Example 4	Example 5	Comparative Example 1	Comparative Example 2
(A)	(a1)	8	-	-	-	2	-	-
	(a2)	-	8	-	-	2	-	-
	(a3)	-	-	8	-	2	-	-
	(a4)	-	-	-	8	2	-	-
	(a5)	-	-	-	-	-	5	3.5
	(a6)	-	-	-	-	-	1.5	3
(B)	(b1)	0.4	0.4	0.4	0.4	0.5	One	0.5
	(b2)	0.6	0.6	0.6	0.6	0.5	1.5	2
(C)	(c1)	0.2	0.2	0.2	0.2	0.1	0.2	0.1
	(c2)	-	-	-	-	0.1	-	0.1
(D)		90	90	90	90	90	90	90
(E)	(e1)	0.1	0.1	0.1	0.1	0.1	0.1	0.1
	(e2)	0.2	0.2	0.2	0.2	0.2	0.2	0.2
(F)		0.5	0.5	0.5	0.5	0.5	0.5	0.5

Physical properties of the epoxy resin compositions of Examples 1 to 5 and Comparative Examples 1 and 2 were evaluated by the following methods, and are shown in Table 2 below.

Property evaluation method

(1) Glass transition temperature (℃), thermal expansion coefficient (ppm / ℃):

4.2 g of the encapsulant prepared by Examples and Comparative Examples were transferred to a transfer molding (molding temperature: 175 ° C., curing time: 120 seconds, transfer time: 14 seconds, transfer speed: 1.2 mm / sec, clamp pressure: 40 tons, Transfer pressure: 1 ton), the specimen was prepared, and then the glass transition temperature and the coefficient of thermal expansion (α1, α2) of the test specimen were measured using TMA (USA) Q400. The coefficient of thermal expansion in the section before the glass transition temperature is defined as α1, and the coefficient of thermal expansion in the section after the glass transition temperature is defined as α2.

(2) warpage (μm):

After attaching an adhesive tape to a carrier wafer (200mm_8inch or 300mm_12inch), a single silicon chip was rearranged on top of a carrier wafer having an adhesive tape by using a pick-and-place process. The chips were rearranged and then pre-baked at 120 ° C. Then, after raising the temperature to 120 ~ 170 ℃, the sealing material prepared in Examples and Comparative Examples was applied on a carrier wafer and then cooled to room temperature to form a sealing layer at the wafer level. After the sealing layer was formed, (7) about 70,000 points of the height and cross section of the wafer were measured using a laser technology WDM-300, and the average of the measured values was expressed as warpage at the wafer level.

Then, the temperature of the carrier wafer was raised to 150-200 ° C. to separate the carrier wafer and the sealed semiconductor chip. Then, a spin coating of the polybenzoazole precursor solution was formed on the molded wafer to form a redistribution layer, and a semiconductor chip separated on the redistribution layer was disposed and then UV cured. Then, the individual semiconductor packages were manufactured by dicing. The warpage of the individual semiconductor packages manufactured as described above was measured using a profile according to JESD22-B112 using AKRO MATRIX of Shadow Moire (USA).

(3) water absorption (wt.%)

Test specimens were prepared using the epoxy resin compositions according to Examples and Comparative Examples. Test specimens were prepared by making a disk-type hardened specimen of 5 cm in diameter and 5 mm in depth using a 30 ton press molding machine and post-curing at 175 ° C. for 2 hours in a dry oven. After measuring the initial weight of the prepared test specimen to 0.001g unit, the test specimen was placed in a chamber of a pressure cooking tester (PCT) (EHS-211MD, EPEC Co., Ltd.) at 120 ° C, 2 atmospheres, and a relative humidity of 100%. After 24 hours of exposure at, the weight was measured to 0.001g units after exposure to calculate the absorption. The mean value is shown after three measurements.

(4) adhesion (kgf)

Substrate with an RDL layer formed by performing a plasma treatment on a Ni metal plate having a width × length × depth of 35 × 35 × 2 mm, followed by spin coating a PBO-based liquid type RDL to a thickness of 15 to 20 μm and curing at 200 ° C. Was prepared. After the epoxy resin compositions of Examples and Comparative Examples were molded on the substrate under conditions of a mold temperature of 175 ° C., a transfer pressure of 9 MPa, a feed rate of 1 mm / sec, and a curing time of 90 seconds, a cured specimen was obtained, and then the cured specimen was ovened at 175 ° C. And post-cured (PMC) for 4 hours. Thereafter, the mixture was left for 60 hours at 60 ° C. and 60% relative humidity conditions, and then C-SAM (C) was used to detect the occurrence of semiconductor package cracks under pre-condition conditions, which was repeated three times at 260 ° C. for 30 seconds. Scanning Acoustic Microscope: Sonix Co., Ltd., a device for determining the presence or absence of peeling by sound waves, was measured for tensile strength (kgf). At this time, the area of the epoxy resin composition in contact with the substrate is 1 × 1cm and the tensile force measurement was carried out using a universal testing machine (UTM) for three specimens for each measurement process and the average value was calculated.

Evaluation item		Example 1	Example 2	Example 3	Example 4	Example 5	Comparative Example 1	Comparative Example 2
Tg (℃)		188	183	179	175	175	160	175
CTE (ppm / ° C)	α1	4.3	4.7	5.0	5.6	6.1	10.8	11
	α2	28	30	52	34	38	38	42
Warpage (μm)	Wafer level	112	129	158	193	286	842	636
	Individual package	63	71	76	75	86	128	121
Hygroscopicity (%)		0.12	0.15	0.16	0.18	0.20	0.97	0.83
Adhesion (kgf)		67	65	61	63	66	32	38

Through Table 2, in Examples 1 to 5 using an epoxy resin containing a compound of Formula 1, the thermal expansion coefficient is lower than that of Comparative Examples 1 to 2 using a conventional general epoxy resin, the glass transition temperature is lower, bending characteristics It can be confirmed that this excellent. In addition, in the case of Examples 1 to 5, it can be confirmed that the moisture absorption rate and the adhesive force characteristics are also superior to Comparative Examples 1 to 2.

[Description of the code]

110, 210: Substrate

120, 220: semiconductor device

130, 230: sealing layer

140, 240: connection terminal

250: adhesive member

Claims (12)

1. Epoxy resin containing a compound represented by the formula (1);

   Curing agent; And

   Resin composition for sealing a solid-state semiconductor device containing an inorganic filler:

   [Formula 1]

   

   In Formula 1, R1 to R12 are each independently hydrogen, a substituent containing a nitrogen atom, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C3-C30 Heteroaryl group, substituted or unsubstituted C3-C10 heterocycloalkyl group, substituted or unsubstituted C7-C30 arylalkyl group, or substituted or unsubstituted C1-C30 heteroalkyl group,

   At least one of R 1 to R 12 is a substituted or unsubstituted C 6 to C 30 aryl group or a substituent containing a nitrogen atom.
2. The substituent containing a nitrogen atom according to claim 1, wherein the substituent containing an isocyanate group (-N = C = O), a cyano group, a nitro group, an amino group, an amine group, a C3-C30 heteroaryl group or nitrogen The resin composition for sealing a solid-state semiconductor element which is a C3-C10 heterocycloalkyl group containing an atom.
3. The resin composition for sealing a solid-state semiconductor element according to claim 1, wherein the C6 to C30 aryl group is a phenyl group, a biphenyl group, a naphthyl group, a naphthol group, or an anthracenyl group.
4. The resin composition of claim 1, wherein the epoxy resin comprises at least one or more of the compounds represented by the following Chemical Formulas 1a to 1d.

   [Formula 1a]

   

   [Formula 1b]

   

   [Formula 1c]

   

   [Formula 1d]

   
5. The resin composition of claim 1, wherein the composition comprises about 0.1 wt% to about 15 wt% of the epoxy resin, about 0.1 wt% to about 13 wt% of the curing agent, and about 70 wt% to about 95 wt% of the inorganic filler.
6. The sealing material containing the resin composition for sealing the solid-state semiconductor element of any one of Claims 1-5.
7. The encapsulant of claim 6, wherein the encapsulant is a tablet, film, or sheet.
8. Board;

   A semiconductor device mounted on the substrate;

   A sealing layer formed on the substrate to encapsulate at least a portion of the semiconductor device; And

   It includes a connection terminal formed under the substrate,

   The said sealing layer is a semiconductor package containing the resin composition for sealing the solid-state semiconductor element of any one of Claims 1-5.
9. The semiconductor package of claim 8, wherein the substrate is a substrate including a circuit board, a lead frame substrate, or a redistribution layer.
10. The semiconductor package of claim 8, wherein a plurality of semiconductor chips are electrically stacked through a through silicon via (TSV).
11. A substrate comprising a redistribution layer;

    A semiconductor device disposed on the redistribution layer;

    A sealing layer formed on the redistribution layer to seal at least a portion of the semiconductor device; And

    A connection terminal formed under the substrate,

    The said sealing layer is a semiconductor package containing the resin composition for sealing the solid-state semiconductor element of any one of Claims 1-5.
12. Board;

    A semiconductor device mounted on the substrate through an adhesive member, wherein a plurality of semiconductor chips are electrically stacked through a through silicon via (TSV);

    It includes a connection terminal formed under the substrate,

    The said sealing layer is a semiconductor package containing the resin composition for sealing the solid-state semiconductor element of any one of Claims 1-5.

Images