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WO2017142251A1 - Epoxy resin composition for sealing semiconductor device, and semiconductor device sealed by using same - Google Patents

Epoxy resin composition for sealing semiconductor device, and semiconductor device sealed by using same Download PDF

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Publication number
WO2017142251A1
WO2017142251A1 PCT/KR2017/001385 KR2017001385W WO2017142251A1 WO 2017142251 A1 WO2017142251 A1 WO 2017142251A1 KR 2017001385 W KR2017001385 W KR 2017001385W WO 2017142251 A1 WO2017142251 A1 WO 2017142251A1
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WO
WIPO (PCT)
Prior art keywords
epoxy resin
resin composition
formula
weight
aromatic monomer
Prior art date
Application number
PCT/KR2017/001385
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French (fr)
Korean (ko)
Inventor
정경학
Original Assignee
삼성에스디아이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성에스디아이 주식회사 filed Critical 삼성에스디아이 주식회사
Priority to CN201780011510.0A priority Critical patent/CN108699423B/en
Publication of WO2017142251A1 publication Critical patent/WO2017142251A1/en

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/10Materials in mouldable or extrudable form for sealing or packing joints or covers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon

Definitions

  • the present invention relates to an epoxy resin composition for semiconductor device sealing and a semiconductor device sealed using the same. More specifically, the present invention relates to an epoxy resin composition for sealing a semiconductor device having excellent adhesion to a silicon nitride film and a semiconductor device sealed using the same.
  • the epoxy resin composition for sealing a semiconductor device generally includes an epoxy resin, a curing agent, a curing catalyst, and the like.
  • techniques for improving the characteristics and reliability of semiconductor devices have been mainly developed by improving epoxy resins or phenol resins. .
  • stack refers to a technique of vertically stacking at least two semiconductor chips or packages. By using the stack technique, the memory capacity of the semiconductor may be increased and the efficiency of using the mounting area may be improved.
  • the through silicon via chip stack package includes a through silicon via formed on each chip, and the through silicon vias are electrically connected to each other.
  • the required mounting area is smaller and the chip operating speed can be improved compared to the case of connecting chips through wire bonding.
  • the silicon nitride film (Si3N4) and the sealing epoxy resin composition are in direct contact with each other at the interface between the chips. , The adhesive force with the silicon nitride film is low, there is a problem that the interface peeling occurs. Therefore, development of the epoxy resin composition for semiconductor element sealing excellent in the adhesive force with a silicon nitride film is calculated
  • An object of the present invention is to provide an epoxy resin composition for semiconductor element sealing that is excellent in adhesion to a silicon nitride film.
  • Another object of the present invention is to provide an epoxy resin composition for sealing semiconductor elements excellent in flame retardancy.
  • Still another object of the present invention is to provide an epoxy resin composition for sealing semiconductor devices having excellent strength while minimizing toughness and flow balance deterioration.
  • Still another object of the present invention is to provide a semiconductor device sealed by the epoxy resin composition for sealing a semiconductor device as described above.
  • the invention is an epoxy resin composition
  • an epoxy resin composition comprising an epoxy resin, a curing agent, an inorganic filler and an aromatic monomer comprising at least two amine groups, wherein the aromatic monomer comprising at least two amine groups is about 0.1 in the epoxy resin composition.
  • an epoxy resin composition for sealing a semiconductor device comprises from about 1% by weight.
  • the aromatic monomer including two or more amine groups may be m-phenylenediamine, 2,3-diaminonaphthalene, 3,3'-diaminobenzidine, tolidine, 3,3'-dihydroxybenzidine or these It can include a combination of.
  • the epoxy resin composition may further comprise a reactive rubber, wherein the reactive rubber is a hydroxyl group, carboxyl group, amine group, epoxy group as a reactive group Or combinations thereof.
  • the reactive rubber is, for example, carboxyl terminated butadiene acrylonitrile, amine-terminated butadiene, amine-terminated butadiene-acrylonitrile, epoxy-terminated butadiene, epoxy-terminated butadiene -Acrylonitrile or combinations thereof.
  • the epoxy resin composition may be formed such that T represented by the following Formula (1) satisfies about 1.2 to about 2.0.
  • Ta, Tb, Tc, and Td are the values represented by following formula (2), formula (3), formula (4), and formula (5), respectively.
  • [A h ] is the weight percent of the h-th epoxy resin included in the composition
  • Eq (A h ) is the equivalent of the h-th epoxy resin
  • l is an integer of 1 to 3.
  • [Bi] is the weight% of the i-th curing agent included in the composition
  • Eq (Bi) is the equivalent of the i-th curing agent
  • m is an integer of 1 to 3.
  • Equation (4)
  • [Cj] is the weight% of the aromatic monomer containing two or more j-th amine groups included in the composition
  • Eq (Cj) is the equivalent of the j-th aromatic monomer
  • n is 1 to 3 Is an integer.
  • [Dk] is the weight percent of the k-th reactive rubber included in the composition
  • Eq (Dk) is the equivalent of the k-th reactive rubber
  • o is an integer of 1 to 3.
  • the epoxy resin composition includes about 0.1% to about 15% by weight of epoxy resin, about 0.1% to about 13% by weight of curing agent, about 70% to about 95% by weight of inorganic filler, and two or more amine groups. About 0.1 to about 1.0 weight percent aromatic monomer and about 0.1 to about 1.0 weight percent reactive rubber.
  • the present invention provides a semiconductor device sealed by the epoxy resin composition as described above.
  • the epoxy resin composition according to the present invention has excellent adhesion with the silicon nitride film, and when applied to a stacked semiconductor device, interfacial peeling is effectively suppressed.
  • the epoxy resin composition according to the present invention includes a plurality of aromatic rings and exhibits excellent flame retardancy.
  • the epoxy resin composition according to the present invention can realize excellent strength while minimizing toughness and flow balance degradation.
  • 1 is a view for explaining a specimen for measuring the flow balance.
  • the first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may be a second component within the technical spirit of the present invention.
  • X-Y which shows a range means "X or more and Y or less.”
  • the epoxy resin composition for semiconductor element sealing of this invention contains the aromatic monomer containing 2 or more of (A) epoxy resin, (B) hardening
  • epoxy resins generally used for sealing semiconductor devices may be used, and are not particularly limited. Specifically, an epoxy compound containing two or more epoxy groups in the molecule can be used.
  • epoxy resins include epoxy resins obtained by epoxidizing condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolak type epoxy resins, cresol novolak type epoxy resins, polyfunctional type epoxy resins, naphthol novolak type epoxys, etc.
  • Resins novolac epoxy resins of bisphenol A / bisphenol F / bisphenol AD, glycidyl ethers of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl epoxy resins, dicyclopentadiene epoxy resins, and the like.
  • the epoxy resin may include at least one of a cresol novolac epoxy resin, a polyfunctional epoxy resin, a phenol aralkyl type epoxy resin and a biphenyl type epoxy resin.
  • the multifunctional epoxy resin may be, for example, an epoxy resin represented by the following Chemical Formula 1.
  • R1, R2, R3, R4, and R5 are each independently a hydrogen atom or an alkyl group having 1 to 10 carbon atoms
  • R6 and R7 are each independently a hydrogen atom, a methyl group, or an ethyl group
  • a is 0 to 6 Is an integer.
  • R1, R2, R3, R4 and R5 are each independently hydrogen, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group or hexyl group
  • R6 and R7 may be hydrogen, but are not necessarily limited thereto.
  • the polyfunctional epoxy resin of the above [Formula 1] can reduce the deformation of the package, and has excellent advantages in fast curing, latentness and preservation, as well as excellent cured strength and adhesiveness.
  • the multifunctional epoxy resin composition may be a triphenol alkane type epoxy resin such as a triphenol methane type epoxy resin, a triphenol propane type epoxy resin, or the like.
  • the phenol aralkyl type epoxy resin may be, for example, a phenol aralkyl type epoxy resin having a novolak structure including a biphenyl derivative represented by the following Chemical Formula 2.
  • the phenol aralkyl type epoxy resin of [Formula 2] forms a structure having a biphenyl in the middle based on a phenol skeleton, and thus has excellent hygroscopicity, toughness, oxidative resistance and crack resistance, and has a low crosslinking density to burn at high temperatures. While forming a carbon layer (char) has the advantage that it can secure a certain level of flame resistance in itself.
  • the biphenyl type epoxy resin may be, for example, a biphenyl type epoxy resin represented by Formula 3 below.
  • R8, R9, R10, R11, R12, R13, R14 and R15 are each independently an alkyl group having 1 to 4 carbon atoms, the average value of c is 0 to 7.
  • the biphenyl type epoxy resin of [Formula 3] has the effect of fluidity and reliability ⁇ strengthening of the resin composition.
  • epoxy resins may be used alone or in combination, and are additive compounds made by preliminary reactions such as melt master batches with other components such as hardeners, curing accelerators, mold release agents, coupling agents, and stress relieving agents. It can also be used in the form.
  • the epoxy resin may be a low chlorine ion (ion), sodium ions (sodium ion), and other ionic impurities contained in the epoxy resin.
  • the epoxy resin is about 0.1% to about 15% by weight of the epoxy resin composition for sealing semiconductor devices, specifically about 0.1% to about 12% by weight, more specifically about 3% to about 12% by weight It may be included in the content of.
  • the content of the epoxy resin satisfies the above range, it is possible to better implement the adhesive strength and strength of the epoxy resin composition after curing.
  • curing agents generally used for sealing semiconductor devices may be used without limitation.
  • the curing agent may include one or more of phenol novolak-type phenol resin, xylox phenol resin, phenol aralkyl type phenol resin, and polyfunctional phenol resin.
  • the phenol novolak type phenol resin may be, for example, a phenol novolak type phenol resin represented by the following [Formula 4], and the phenol aralkyl type phenol resin is, for example, represented by the following [Formula 5] It may be a phenol aralkyl type phenol resin having a novolak structure containing a biphenyl derivative in a molecule thereof.
  • the xylol-type phenolic resin may be, for example, a xylok-type phenolic resin represented by the following [Formula 6], and the polyfunctional phenolic resin is, for example, represented by the following [Formula 7] It may be a polyfunctional phenol resin containing the repeating unit represented.
  • the phenol novolak type phenolic resin represented by Chemical Formula 4 has a short crosslinking point spacing, and when reacted with an epoxy resin, the crosslinking density becomes high, thereby increasing the glass transition temperature of the cured product.
  • the curvature of a package can be suppressed.
  • the phenol aralkyl type phenol resin represented by Chemical Formula 5 forms a carbon layer (char) by reacting with an epoxy resin to achieve flame retardancy by blocking transfer of heat and oxygen around.
  • the xylol-type phenolic resin represented by Chemical Formula 6 has an effect of enhancing the fluidity and reliability of the resin composition.
  • the polyfunctional phenolic resin including the repeating unit represented by Chemical Formula 7 has an effect of enhancing the high temperature bending property of the epoxy resin composition. .
  • curing agents may be used alone or in combination, and may also be used as an addition compound made by performing a linear reaction such as a melt master batch with other components such as an epoxy resin, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent.
  • a linear reaction such as a melt master batch with other components such as an epoxy resin, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent.
  • the curing agent may be included in about 0.1 to about 13% by weight, specifically about 0.1 to about 10% by weight, more specifically about 0.1 to about 8% by weight of the epoxy resin composition.
  • the content of the curing agent satisfies the above range, the curing degree of the epoxy resin composition and the strength of the cured product are excellent.
  • the blending ratio of the epoxy resin and the curing agent may be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package.
  • the chemical equivalent ratio of the epoxy resin to the curing agent may be about 0.95 to about 3, specifically about 1 to about 2, more specifically about 1 to about 1.75.
  • inorganic filler general inorganic fillers used in semiconductor sealing materials may be used without limitation, and are not particularly limited.
  • fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. may be used. Can be. These may be used alone or in combination.
  • molten silica having a low coefficient of linear expansion may be used to reduce stress.
  • Fused silica refers to amorphous silica having a specific gravity of 2.3 or less, and also includes amorphous silica made by melting crystalline silica or synthesized from various raw materials.
  • the shape and particle diameter of the molten silica are not particularly limited, but about 1 to about spherical molten silica having a spherical molten silica having an average particle diameter of about 5 to about 30 ⁇ m and an average particle diameter of about 0.001 to about 1 ⁇ m.
  • the molten silica mixture including about 50% by weight, comprises from about 40% to about 100% by weight of the total filler.
  • the maximum particle diameter can be adjusted to any one of about 45 micrometers, about 55 micrometers, and about 75 micrometers, and can be used.
  • conductive carbon may be included as a foreign material on the silica surface, but it is also important to select a material containing less polar foreign matter.
  • the amount of the inorganic filler used depends on the required physical properties such as formability, low stress, and high temperature strength.
  • the inorganic filler may be included in about 70 to about 95% by weight, for example about 80% to about 90% or about 83% to about 97% by weight of the epoxy resin composition. Within this range, flame retardancy, fluidity and reliability of the epoxy resin composition can be ensured.
  • the epoxy resin composition of this invention contains the aromatic monomer containing two or more amine groups.
  • an aromatic monomer containing two or more amine groups When an aromatic monomer containing two or more amine groups is added, crosslinking is induced by the reaction between the amine and the epoxy of the epoxy resin, thereby improving adhesion to the silicon nitride film and improving strength after molding. Effect occurs.
  • the addition of an aromatic monomer has an effect of increasing the content of the aromatic ring in the epoxy resin to improve flame retardancy.
  • aromatic monomer containing two or more said amine groups it is m-phenylenediamine, 2, 3- diamino naphthalene, 3,3'- diaminobenzidine, tolidine, 3,3'- dihydride, for example. Hydroxybenzidine or a combination thereof, but is not limited thereto.
  • the aromatic monomer containing two or more amine groups may be included in about 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1.0% by weight of the epoxy resin composition.
  • the aromatic monomer including two or more amine groups may be included in the range of about one or more of the above numerical values and about one or less of the above numerical values in the epoxy resin composition.
  • the aromatic monomer including two or more amine groups may be included in about 0.1 to about 1% by weight, specifically about 0.2 to about 0.3% or about 0.5 to about 1.0% by weight of the epoxy resin composition. Can be. In the above range, there is an effect of improving adhesion and strength.
  • the epoxy resin composition of this invention can contain a reactive rubber further as needed.
  • the reactive rubber is for adjusting the toughness and flow balance of the epoxy resin composition.
  • the reactive rubber may include a hydroxyl group, a carboxyl group, an amine group, an epoxy group, or a combination thereof, but is not limited thereto.
  • the reactive rubber may be included in about 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1.0 weight percent of the epoxy resin composition.
  • the aromatic monomer including two or more amine groups may be included in the range of about one or more of the above numerical values and about one or less of the above numerical values in the epoxy resin composition.
  • the reactive rubber may be included in about 0.1 to about 0.7% by weight, specifically about 0.1 to 0.5% by weight of the epoxy resin composition. Toughness and flow balance can be appropriately adjusted in the above range.
  • the reactive rubber is carboxyl terminated butadiene acrylonitrile, amine-terminated butadiene, amine-terminated butadiene-acrylonitrile, epoxy-terminated butadiene, epoxy-terminated butadiene -Acrylonitrile or combinations thereof, but is not limited thereto.
  • the epoxy resin composition of the present invention is one or two or more components in each of the epoxy resin (A), the curing agent (B), the aromatic monomer (D) and / or the reactive rubber (E) containing two or more amine groups. It may include.
  • T represented by the following formula (1) is about 1.2 to about 2.0
  • an epoxy resin composition excellent in all of strength, toughness and flow balance may be used. You can get it.
  • T represented by Formula (1) may be about 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9 or 2.0.
  • T represented by the formula (1) may be in the range of at least one of the above numerical values and at most one of the above numerical values.
  • Ta, Tb, Tc, and Td are the values represented by following formula (2), formula (3), formula (4), and formula (5), respectively.
  • [A h ] is the weight percent of the h-th epoxy resin included in the composition
  • Eq (A h ) is the equivalent of the h-th epoxy resin
  • l is an integer of 1 to 3.
  • [Bi] is the weight% of the i-th curing agent included in the composition
  • Eq (Bi) is the equivalent of the i-th curing agent
  • m is an integer of 1 to 3.
  • Equation (4)
  • [Cj] is the weight% of the aromatic monomer containing two or more j-th amine groups included in the composition
  • Eq (Cj) is the equivalent of the j-th aromatic monomer
  • n is 1 to 3 Is an integer.
  • [Dk] is the weight percent of the k-th reactive rubber included in the composition
  • Eq (Dk) is the equivalent of the k-th reactive rubber
  • o is an integer of 1 to 3.
  • the epoxy resin composition may further include one or more of a curing accelerator, a coupling agent, and a colorant, as necessary.
  • a hardening accelerator is a substance which accelerates reaction of an epoxy resin and a hardening
  • a tertiary amine, an organometallic compound, an organophosphorus compound, an imidazole, a boron compound, etc. can be used, for example.
  • Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris (diaminomethyl ) Phenol and tri-2-ethylhexyl acid salt.
  • organometallic compound examples include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like.
  • Organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphate And pin-1,4-benzoquinones adducts.
  • the imidazoles include 2-phenyl-4methylimidazole, 2-methylimidazole, # 2-phenylimidazole, # 2-aminoimidazole, 2-methyl-1-vinylimidazole, and 2-ethyl-4.
  • boron compound examples include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoro Roboranetriethylamine, tetrafluoroboraneamine, and the like.
  • 1, 5- diazabicyclo [4.3.0] non-5-ene (1, 5- diazabicyclo [4.3.0] non-5-ene: DBN)
  • 1, 8- diazabicyclo [5.4. 0] undec-7-ene 1,8-diazabicyclo [5.4.0] undec-7-ene: DBU
  • phenol novolak resin salts and the like.
  • an organophosphorus compound, a boron compound, an amine type, or an imidazole series hardening accelerator can be used individually or in mixture as said hardening accelerator.
  • the curing accelerator may also use an epoxy resin or an adduct made by preliminary reaction with a curing agent.
  • the amount of the curing accelerator in the present invention may be about 0.01 to about 2% by weight based on the total weight of the epoxy resin composition, specifically about 0.02 to about 1.5% by weight, more specifically about 0.05 to about 1% by weight. . In the above range, there is an advantage that the curing of the epoxy resin composition is promoted and the degree of curing is also good.
  • the coupling agent may be a silane coupling agent.
  • the said silane coupling agent may react between an epoxy resin and an inorganic filler, and what is necessary is just to improve the interface strength of an epoxy resin and an inorganic filler, The kind is not specifically limited.
  • Specific examples of the silane coupling agent include epoxysilane, aminosilane, ureidosilane, mercaptosilane, and the like.
  • the coupling agents may be used alone or in combination.
  • the coupling agent may be included in an amount of about 0.01 to about 5 wt%, specifically about 0.05 to about 3 wt%, and more specifically about 0.1 to about 2 wt%, based on the total weight of the epoxy resin composition. In the above range, the strength of the cured epoxy resin composition is improved.
  • the colorant is for laser marking of the semiconductor device encapsulant, and may include, for example, carbon black, titanium nitride, titanium black, or a mixture thereof.
  • the colorant may be included in about 0.05 to about 4.0% by weight of the epoxy resin composition. Within this range, incomplete marking of the epoxy resin composition can be prevented from occurring, soot can be prevented from occurring due to sooting during marking, and electrical insulation of the resin composition can be prevented from deteriorating.
  • the epoxy resin composition is higher fatty acid in the range that does not impair the object of the present invention; Higher fatty acid metal salts; And release agents such as ester waxes and carnauba waxes; Stress relieving agents such as modified silicone oil, silicone powder, and silicone resin; Tetrakis [methylene-3- (3,5-di-tertbutyl-4-hydroxyphenyl) propionate Tetrakis [methylene-3- (3,5-di-tertbutylbutyl-4-hydroxyphenyl) propionate] methane antioxidants such as methane); And the like may be further added as necessary.
  • the epoxy resin composition is uniformly sufficiently mixed with the above components at a predetermined mixing ratio using a Henschel mixer or Lodige mixer, and then roll-mill or kneader ( kneader), and then cooled and milled to obtain a final powder product.
  • the epoxy resin composition of the present invention as described above is excellent in adhesive force with the silicon nitride film can be applied to a stacked semiconductor device can implement excellent durability.
  • the epoxy resin composition of the present invention may have an adhesive strength of about 40 kgf to about 60 kgf, specifically about 44 kgf to about 50 kgf.
  • the epoxy resin composition of the present invention has a toughness at room temperature (about 25 ° C.) of 50 kgf ⁇ mm or more, specifically, about 50 kgf ⁇ mm to about 65 kgf ⁇ mm, and a toughness at about 260 ° C. of about 26 kgf ⁇ mm or more, more specifically, about 30 kgf ⁇ mm to about 45 kgf ⁇ mm.
  • the epoxy resin composition of the present invention is high in the content of the aromatic group in the composition due to the addition of the aromatic amine is excellent in flame retardancy.
  • the epoxy resin composition of the present invention as described above can be usefully applied to semiconductor devices, in particular, stacked semiconductor devices.
  • a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention a low pressure transfer molding method can be generally used.
  • molding can also be performed by injection molding or casting.
  • Fused Silica (Admatech) having an average particle diameter of 20 ⁇ m and Synthetic Silica (Admatech) having an average particle diameter of 0.5 ⁇ m were mixed and used in a 9: 1 weight ratio.
  • TPP triphenylphosphine, Hokko Chemical
  • the components were weighed according to the composition (unit: parts by weight) of Table 1 below, and then uniformly mixed using a Henschel mixer to prepare a primary composition in powder form. After the melt kneading at 95 °C using a continuous kneader after cooling and pulverizing to prepare an epoxy resin composition for sealing a semiconductor device.
  • Adhesion force with the silicon nitride film (kgf): The silicon wafer on which silicon nitride was deposited was cut to a predetermined size (30 mm x 30 mm) and fixed inside the mold, and then the epoxy resin composition of Table 1 was prepared on the prepared metal test piece. ⁇ 180 °C, conveying pressure 1000psi, conveying speed 0.5 ⁇ 1cm / sec, curing time of 120 seconds to obtain a hardened specimen, and then put the specimen in an oven of 170 ⁇ 180 °C 4 hours post-cure (PMC; post mold Immediately after cure, and left for 120 hours at 60 ° C.
  • PMC post-cure
  • Toughness (kgf ⁇ mm): After making the standard specimen (125 ⁇ 12.6 ⁇ 6.4 mm) according to ASTM D-790 and curing it at 175 °C for 4 hours, use the universal testing machine (UTM) at 35 °C, It measured at 260 degreeC.

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Abstract

The present invention relates to an epoxy resin composition for sealing a semiconductor device, the epoxy resin composition comprising: an epoxy resin; a curing agent; an inorganic filler; and an aromatic monomer containing two or more amine groups, wherein the aromatic monomer containing two or more amine groups is contained in an amount of approximately 0.1 to 1.0 wt% in the epoxy resin composition.

Description

반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자Epoxy resin composition for semiconductor device sealing and semiconductor device sealed using the same
본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자에 관한 것이다. 보다 상세하게는, 질화실리콘 막과의 접착력이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자에 관한 것이다.The present invention relates to an epoxy resin composition for semiconductor device sealing and a semiconductor device sealed using the same. More specifically, the present invention relates to an epoxy resin composition for sealing a semiconductor device having excellent adhesion to a silicon nitride film and a semiconductor device sealed using the same.
IC(Integrated Circuit), LSI(Large Scale Integration) 등과 같은 반도체 소자를 수분 등의 외부 환경으로부터 보호하기 위해, 에폭시 수지 조성물을 이용하여 반도체 소자를 밀봉하는 기술이 널리 사용되고 있다. 이러한 반도체 소자 밀봉용 에폭시 수지 조성물은 일반적으로 에폭시 수지, 경화제, 경화 촉매 등을 포함하는데, 종래에는 에폭시 수지나 경화제인 페놀 수지를 개량함으로써, 반도체 소자의 특성 및 신뢰성을 향상시키는 기술들이 주로 개발되었다.In order to protect a semiconductor device such as an integrated circuit (IC), a large scale integration (LSI), and the like from an external environment such as moisture, a technique of sealing a semiconductor device using an epoxy resin composition is widely used. The epoxy resin composition for sealing a semiconductor device generally includes an epoxy resin, a curing agent, a curing catalyst, and the like. Conventionally, techniques for improving the characteristics and reliability of semiconductor devices have been mainly developed by improving epoxy resins or phenol resins. .
한편, 최근 전자제품들이 점점 더 박형화, 소형화, 고성능화되어 감에 따라, 다수의 반도체칩들을 스택(stack)하여 고집적화된 반도체 패키지의 사용이 늘고 있다. 여기서 "스택"이란 적어도 2개 이상의 반도체 칩 또는 패키지를 수직으로 쌓아올리는 기술을 일컫는 것으로, 이러한 스택 기술을 이용하면, 반도체의 메모리 용량을 증가시킬 수 있고 실장 면적 사용의 효율성도 향상시킬 수 있다. Meanwhile, as electronic products become thinner, smaller, and higher in recent years, the use of highly integrated semiconductor packages by stacking a plurality of semiconductor chips is increasing. Here, the term "stack" refers to a technique of vertically stacking at least two semiconductor chips or packages. By using the stack technique, the memory capacity of the semiconductor may be increased and the efficiency of using the mounting area may be improved.
이 중 관통 실리콘 비아 칩 스택 패키지(Through silicon Via Chip stack pakage)는 각 칩에 관통 실리콘 비아를 형성하고, 상기 관통 실리콘 비아들이 서로 전기적으로 연결되는 구조로 이루어진다. 관통 실리콘 비아 칩 스택 패키지의 경우, 와이어 본딩을 통해 칩들을 연결하는 경우에 비해 요구되는 실장 면적이 작고, 칩 동작 속도를 향상시킬 수 있다는 장점을 가진다. The through silicon via chip stack package includes a through silicon via formed on each chip, and the through silicon vias are electrically connected to each other. In the case of through-silicon via chip stack packages, the required mounting area is smaller and the chip operating speed can be improved compared to the case of connecting chips through wire bonding.
한편, 상기와 같은 관통 실리콘 비아 칩 스택 패키지의 경우, 칩들 사이의 계면에서 질화실리콘막(Si3N4)과 밀봉용 에폭시 수지 조성물이 직접 접촉하게 되는데, 종래에 사용되던 반도체 소자 밀봉용 에폭시 수지 조성물의 경우, 질화 실리콘막과의 접착력이 낮아 계면 박리가 발생한다는 문제점이 있다. 따라서, 질화실리콘 막과의 접착력이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물의 개발이 요구되고 있다.On the other hand, in the case of the through-silicon via chip stack package as described above, the silicon nitride film (Si3N4) and the sealing epoxy resin composition are in direct contact with each other at the interface between the chips. , The adhesive force with the silicon nitride film is low, there is a problem that the interface peeling occurs. Therefore, development of the epoxy resin composition for semiconductor element sealing excellent in the adhesive force with a silicon nitride film is calculated | required.
관련 선행문헌으로 일본공개특허 제2007-262238호가 있다.As a related prior art, there is Japanese Patent Laid-Open No. 2007-262238.
본 발명의 목적은 질화실리콘 막과의 접착력이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 것이다.An object of the present invention is to provide an epoxy resin composition for semiconductor element sealing that is excellent in adhesion to a silicon nitride film.
본 발명의 다른 목적은 난연성이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 것이다.Another object of the present invention is to provide an epoxy resin composition for sealing semiconductor elements excellent in flame retardancy.
본 발명의 또 다른 목적은 터프니스(Toughness) 및 플로우 발란스(flow balance) 저하를 최소화하면서 우수한 강도를 갖는 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 것이다.Still another object of the present invention is to provide an epoxy resin composition for sealing semiconductor devices having excellent strength while minimizing toughness and flow balance deterioration.
본 발명의 또 다른 목적은 상기와 같은 반도체 소자 밀봉용 에폭시 수지 조성물에 의해 밀봉된 반도체 소자를 제공하는 것이다.Still another object of the present invention is to provide a semiconductor device sealed by the epoxy resin composition for sealing a semiconductor device as described above.
일 측면에서, 본 발명은 에폭시 수지, 경화제, 무기 충전재 및 아민기를 2개 이상 포함하는 방향족 모노머를 포함하는 에폭시 수지 조성물이며, 상기 아민기를 2개 이상 포함하는 방향족 모노머가 상기 에폭시 수지 조성물 내에 약 0.1 내지 약 1중량%로 포함되는 반도체 소자 밀봉용 에폭시 수지 조성물을 제공한다.In one aspect, the invention is an epoxy resin composition comprising an epoxy resin, a curing agent, an inorganic filler and an aromatic monomer comprising at least two amine groups, wherein the aromatic monomer comprising at least two amine groups is about 0.1 in the epoxy resin composition. To provide an epoxy resin composition for sealing a semiconductor device comprises from about 1% by weight.
이때, 상기 아민기를 2개 이상 포함하는 방향족 모노머는 m-페닐렌디아민, 2,3-디아미노나프탈렌, 3,3'-디아미노벤지딘, 톨리딘, 3,3'-디히드록시벤지딘 또는 이들의 조합을 포함할 수 있다. In this case, the aromatic monomer including two or more amine groups may be m-phenylenediamine, 2,3-diaminonaphthalene, 3,3'-diaminobenzidine, tolidine, 3,3'-dihydroxybenzidine or these It can include a combination of.
한편, 상기 에폭시 수지 조성물은 반응성 러버를 추가로 포함할 수 있으며, 이때, 상기 반응성 러버는 반응성기로 수산기, 카르복시기, 아민기, 에폭시기 또는 이들의 조합을 포함할 수 있다. 상기 반응성 러버는, 예를 들면, 카르복실 터미네이티드 부타디엔 아크릴로니트릴, 아민-테미네이티드 부타디엔, 아민-터미네이티드 부타디엔-아크릴로니트릴, 에폭시-터미네이티드 부타디엔, 에폭시-터미네이티드 부타디엔-아크릴로니트릴 또는 이들의 조합을 포함하는 것일 수 있다. On the other hand, the epoxy resin composition may further comprise a reactive rubber, wherein the reactive rubber is a hydroxyl group, carboxyl group, amine group, epoxy group as a reactive group Or combinations thereof. The reactive rubber is, for example, carboxyl terminated butadiene acrylonitrile, amine-terminated butadiene, amine-terminated butadiene-acrylonitrile, epoxy-terminated butadiene, epoxy-terminated butadiene -Acrylonitrile or combinations thereof.
상기 에폭시 수지 조성물은, 하기 식 (1)으로 표시되는 T가 약 1.2 내지 약 2.0을 만족하도록 형성될 수 있다. The epoxy resin composition may be formed such that T represented by the following Formula (1) satisfies about 1.2 to about 2.0.
식 (1): T = Ta / (Tb + Tc + Td)Equation (1): T = Ta / (Tb + Tc + Td)
상기 식 (1)에서, Ta, Tb, Tc 및 Td는 각각 하기 식 (2), 식 (3), 식(4) 및 식(5)로 표시되는 값이다.In said Formula (1), Ta, Tb, Tc, and Td are the values represented by following formula (2), formula (3), formula (4), and formula (5), respectively.
식 (2):
Figure PCTKR2017001385-appb-I000001
Equation (2):
Figure PCTKR2017001385-appb-I000001
상기 식 (2)에서, [Ah]는 조성물 내에 포함되는 h번째 에폭시 수지의 중량%이고, Eq(Ah)는 h번째 에폭시 수지의 당량이며, l은 1 내지 3의 정수이다. In the formula (2), [A h ] is the weight percent of the h-th epoxy resin included in the composition, Eq (A h ) is the equivalent of the h-th epoxy resin, and l is an integer of 1 to 3.
식 (3):
Figure PCTKR2017001385-appb-I000002
Equation (3):
Figure PCTKR2017001385-appb-I000002
상기 식 (3)에서, [Bi]는 조성물 내에 포함되는 i번째 경화제의 중량%이고, Eq(Bi)는 i번째 경화제의 당량이며, m은 1 내지 3의 정수이다. In the formula (3), [Bi] is the weight% of the i-th curing agent included in the composition, Eq (Bi) is the equivalent of the i-th curing agent, m is an integer of 1 to 3.
식 (4):
Figure PCTKR2017001385-appb-I000003
Equation (4):
Figure PCTKR2017001385-appb-I000003
상기 식 (4)에서, [Cj]는 조성물 내에 포함되는 j번째 아민기를 2개 이상 포함하는 방향족 모노머의 중량%이고, Eq(Cj)는 상기 j번째 방향족 모노머의 당량이며, n은 1 내지 3의 정수이다. In the formula (4), [Cj] is the weight% of the aromatic monomer containing two or more j-th amine groups included in the composition, Eq (Cj) is the equivalent of the j-th aromatic monomer, n is 1 to 3 Is an integer.
식 (5):
Figure PCTKR2017001385-appb-I000004
Equation (5):
Figure PCTKR2017001385-appb-I000004
상기 식 (5)에서, [Dk]는 조성물 내에 포함되는 k번째 반응성 러버의 중량%이고, Eq(Dk)는 상기 k번째 반응성 러버의 당량이며, o는 1 내지 3의 정수이다. In the formula (5), [Dk] is the weight percent of the k-th reactive rubber included in the composition, Eq (Dk) is the equivalent of the k-th reactive rubber, and o is an integer of 1 to 3.
구체적으로는, 상기 에폭시 수지 조성물은 에폭시 수지 약 0.1중량% 내지 약 15중량%, 경화제 약 0.1중량% 내지 약 13중량%, 무기 충전재 약 70중량% 내지 약 95중량%, 아민기를 2개 이상 포함하는 방향족 모노머 약 0.1 내지 약 1.0중량% 및 반응성 러버 약 0.1 내지 약 1.0중량%를 포함할 수 있다.Specifically, the epoxy resin composition includes about 0.1% to about 15% by weight of epoxy resin, about 0.1% to about 13% by weight of curing agent, about 70% to about 95% by weight of inorganic filler, and two or more amine groups. About 0.1 to about 1.0 weight percent aromatic monomer and about 0.1 to about 1.0 weight percent reactive rubber.
다른 측면에서, 본 발명은 상기와 같은 에폭시 수지 조성물에 의해 밀봉된 반도체 소자를 제공한다.In another aspect, the present invention provides a semiconductor device sealed by the epoxy resin composition as described above.
본 발명에 따른 에폭시 수지 조성물은 질화실리콘 막과의 접착력이 우수하여, 스택형 반도체 소자에 적용할 경우 계면 박리가 효과적으로 억제된다. The epoxy resin composition according to the present invention has excellent adhesion with the silicon nitride film, and when applied to a stacked semiconductor device, interfacial peeling is effectively suppressed.
또한, 본 발명에 따른 에폭시 수지 조성물은 다수의 방향족 환을 포함하여 우수한 난연성을 나타낸다.In addition, the epoxy resin composition according to the present invention includes a plurality of aromatic rings and exhibits excellent flame retardancy.
또한, 본 발명에 따른 에폭시 수지 조성물은 Toughness 및 flow balance 저하를 최소화하면서 우수한 강도를 구현할 수 있다.In addition, the epoxy resin composition according to the present invention can realize excellent strength while minimizing toughness and flow balance degradation.
도 1은 플로우 발란스 측정용 시편을 설명하기 위한 도면이다.1 is a view for explaining a specimen for measuring the flow balance.
이하, 본 발명에 대해 보다 구체적으로 설명한다. EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated more concretely.
본 발명을 설명함에 있어서, 관련된 공지 기술에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우 그 상세한 설명은 생략한다. In describing the present invention, when it is determined that the detailed description of the related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.
본 명세서 상에서 언급한 '포함한다', '갖는다', '이루어진다' 등이 사용되는 경우 '~만'이 사용되지 않는 이상 다른 부분이 추가될 수 있다. 구성 요소를 단수로 표현한 경우에 특별히 명시적인 기재 사항이 없는 한 복수를 포함하는 경우를 포함한다.In the case where 'comprises', 'haves', 'consists of' and the like mentioned in the present specification are used, other parts may be added unless 'only' is used. In the case where the component is expressed in the singular, the plural includes the plural unless specifically stated otherwise.
구성 요소를 해석함에 있어서, 별도의 명시적 기재가 없더라도 오차 범위를 포함하는 것으로 해석한다.In interpreting a component, it is interpreted to include an error range even if there is no separate description.
제1, 제2 등이 다양한 구성요소들을 서술하기 위해서 사용되나, 이들 구성요소들은 이들 용어에 의해 제한되지 않는다. 이들 용어들은 단지 하나의 구성요소를 다른 구성요소와 구별하기 위하여 사용하는 것이다. 따라서, 이하에서 언급되는 제1 구성요소는 본 발명의 기술적 사상 내에서 제2 구성요소일 수도 있다.The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may be a second component within the technical spirit of the present invention.
또한, 본 명세서에 있어서, 범위를 나타내는 「X 내지 Y」는 「X 이상 Y 이하」를 의미한다. In addition, in this specification, "X-Y" which shows a range means "X or more and Y or less."
이하, 본 발명에 따른 에폭시 수지 조성물에 대해 자세히 설명한다.Hereinafter, the epoxy resin composition according to the present invention will be described in detail.
본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물은 (A) 에폭시 수지, (B) 경화제, (C) 무기 충전제 및 (D) 아민기를 2개 이상 포함하는 방향족 모노머를 포함한다. 또한, 본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물은 필요에 따라, (E) 반응성 러버를 더 포함할 수 있다. The epoxy resin composition for semiconductor element sealing of this invention contains the aromatic monomer containing 2 or more of (A) epoxy resin, (B) hardening | curing agent, (C) inorganic filler, and (D) amine group. Moreover, the epoxy resin composition for semiconductor element sealing of this invention can further contain (E) reactive rubber as needed.
(A) 에폭시 수지(A) epoxy resin
본 발명에서 사용되는 에폭시 수지로는, 반도체 소자 밀봉용으로 일반적으로 사용되는 에폭시 수지들이 사용될 수 있으며, 특별히 제한되지 않는다. 구체적으로 분자 중에 2개 이상의 에폭시기를 함유하는 에폭시 화합물을 사용할 수 있다. 이와 같은 에폭시 수지로는 페놀 또는 알킬 페놀류와 히드록시벤즈알데히드와의 축합물을 에폭시화함으로써 얻어지는 에폭시 수지, 페놀노볼락형 에폭시 수지, 크레졸노볼락형 에폭시 수지, 다관능형 에폭시 수지, 나프톨노볼락형 에폭시 수지, 비스페놀A/비스페놀F/비스페놀AD의 노볼락형 에폭시 수지, 비스페놀A/비스페놀F/비스페놀AD의 글리시딜에테르, 비스히드록시비페닐계 에폭시 수지, 디시클로펜타디엔계 에폭시 수지 등을 들 수 있다. 보다 구체적으로는, 상기 에폭시 수지는 크레졸노볼락형 에폭시 수지, 다관능형 에폭시 수지, 페놀아랄킬형 에폭시 수지 및 바이페닐형 에폭시 수지 중 하나 이상을 포함할 수 있다. As the epoxy resin used in the present invention, epoxy resins generally used for sealing semiconductor devices may be used, and are not particularly limited. Specifically, an epoxy compound containing two or more epoxy groups in the molecule can be used. Such epoxy resins include epoxy resins obtained by epoxidizing condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolak type epoxy resins, cresol novolak type epoxy resins, polyfunctional type epoxy resins, naphthol novolak type epoxys, etc. Resins, novolac epoxy resins of bisphenol A / bisphenol F / bisphenol AD, glycidyl ethers of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl epoxy resins, dicyclopentadiene epoxy resins, and the like. Can be. More specifically, the epoxy resin may include at least one of a cresol novolac epoxy resin, a polyfunctional epoxy resin, a phenol aralkyl type epoxy resin and a biphenyl type epoxy resin.
상기 다관능형 에폭시 수지는, 예를 들면, 하기 화학식 1로 표시되는 에폭시 수지일 수 있다.The multifunctional epoxy resin may be, for example, an epoxy resin represented by the following Chemical Formula 1.
[화학식 1][Formula 1]
Figure PCTKR2017001385-appb-I000005
Figure PCTKR2017001385-appb-I000005
상기 [화학식 1]에서 R1, R2, R3, R4 및 R5는 각각 독립적으로 수소 원자 또는 탄소수 1~10의 알킬기이고, R6 및 R7은 각각 독립적으로 수소 원자, 메틸기 또는 에틸기이고, a는 O 내지 6의 정수이다. 구체적으로, 상기 R1, R2, R3, R4 및 R5는 각각 독립적으로 수소, 메틸기, 에틸기, 프로필기, 이소프로필기, n-부틸기, 이소부틸기, tert-부틸기, 펜틸기 또는 헥실기이며, R6 및 R7은 수소일 수 있으나, 반드시 이에 제한되는 것은 아니다. In Formula 1, R1, R2, R3, R4, and R5 are each independently a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, R6 and R7 are each independently a hydrogen atom, a methyl group, or an ethyl group, and a is 0 to 6 Is an integer. Specifically, R1, R2, R3, R4 and R5 are each independently hydrogen, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group or hexyl group , R6 and R7 may be hydrogen, but are not necessarily limited thereto.
상기 [화학식 1]의 다관능형 에폭시 수지는 패키지의 변형을 작게 할 수 있고, 속경화성, 잠재성 및 보존성이 우수할 뿐만 아니라, 경화물 강도 및 접착성도 우수한 장점이 있다.The polyfunctional epoxy resin of the above [Formula 1] can reduce the deformation of the package, and has excellent advantages in fast curing, latentness and preservation, as well as excellent cured strength and adhesiveness.
보다 구체적으로 상기 다관능형 에폭시 수지 조성물은 트리페놀메탄형 에폭시 수지, 트리페놀프로판형 에폭시 수지 등과 같은 트리페놀알칸형 에폭시 수지일 수 있다.More specifically, the multifunctional epoxy resin composition may be a triphenol alkane type epoxy resin such as a triphenol methane type epoxy resin, a triphenol propane type epoxy resin, or the like.
상기 페놀아랄킬형 에폭시 수지는, 예를 들면, 하기 화학식 2로 표시되는 바이페닐(biphenyl) 유도체를 포함하는 노볼락 구조의 페놀아랄킬형 에폭시 수지일 수 있다. The phenol aralkyl type epoxy resin may be, for example, a phenol aralkyl type epoxy resin having a novolak structure including a biphenyl derivative represented by the following Chemical Formula 2.
[화학식 2][Formula 2]
Figure PCTKR2017001385-appb-I000006
Figure PCTKR2017001385-appb-I000006
상기 [화학식 2]에서, b의 평균치는 1 내지 7이다.In [Formula 2], the average value of b is 1 to 7.
상기 [화학식 2]의 페놀아랄킬형 에폭시 수지는 페놀 골격을 바탕으로 하면서 중간에 바이페닐을 가지고 있는 구조를 형성하여 흡습성, 인성, 내산화성 및 내크랙성이 우수하며, 가교 밀도가 낮아서 고온에서 연소 시 탄소층(char)을 형성하면서 그 자체로 어느 정도 수준의 난연성을 확보할 수 있는 장점이 있다.The phenol aralkyl type epoxy resin of [Formula 2] forms a structure having a biphenyl in the middle based on a phenol skeleton, and thus has excellent hygroscopicity, toughness, oxidative resistance and crack resistance, and has a low crosslinking density to burn at high temperatures. While forming a carbon layer (char) has the advantage that it can secure a certain level of flame resistance in itself.
상기 바이페닐형 에폭시 수지는, 예를 들면, 하기 화학식 3로 표시되는 바이페닐형 에폭시 수지일 수 있다.The biphenyl type epoxy resin may be, for example, a biphenyl type epoxy resin represented by Formula 3 below.
[화학식 3][Formula 3]
Figure PCTKR2017001385-appb-I000007
Figure PCTKR2017001385-appb-I000007
상기 [화학식 3]에서, R8, R9, R10, R11, R12, R13, R14 및 R15는 각각 독립적으로 탄소수 1~4의 알킬기이며, c의 평균값은 0 내지 7이다.In [Formula 3], R8, R9, R10, R11, R12, R13, R14 and R15 are each independently an alkyl group having 1 to 4 carbon atoms, the average value of c is 0 to 7.
상기 [화학식 3]의 바이페닐형 에폭시 수지는 수지 조성물의 유동성 및 신뢰성 강화의 효과가 있다.The biphenyl type epoxy resin of [Formula 3] has the effect of fluidity and reliability 유동 strengthening of the resin composition.
이들 에폭시 수지는 단독 혹은 병용하여 사용될 수 있으며, 에폭시 수지에 경화제, 경화 촉진제, 이형제, 커플링제, 및 응력완화제 등의 기타 성분과 멜트 마스터배치(melt master batch)와 같은 선반응을 시켜 만든 부가 화합물 형태로 사용할 수도 있다. 한편, 내습 신뢰성 향상을 위해 상기 에폭시 수지는 에폭시 수지 중에 함유된 염소 이온(ion), 나트륨 이온(sodium ion), 및 그 밖의 이온성 불순물이 낮은 것을 사용할 수 있다.These epoxy resins may be used alone or in combination, and are additive compounds made by preliminary reactions such as melt master batches with other components such as hardeners, curing accelerators, mold release agents, coupling agents, and stress relieving agents. It can also be used in the form. On the other hand, in order to improve the moisture resistance reliability, the epoxy resin may be a low chlorine ion (ion), sodium ions (sodium ion), and other ionic impurities contained in the epoxy resin.
상기 에폭시 수지는 반도체 소자 밀봉용 에폭시 수지 조성물 중 약 0.1중량% 내지 약 15중량% 정도, 구체적으로는 약 0.1중량% 내지 약 12중량% 정도, 더욱 구체적으로 약 3중량% 내지 약 12중량% 정도의 함량으로 포함될 수 있다. 에폭시 수지의 함량이 상기 범위를 만족할 경우, 경화 후 에폭시 수지 조성물의 접착력 및 강도를 보다 우수하게 구현할 수 있다.The epoxy resin is about 0.1% to about 15% by weight of the epoxy resin composition for sealing semiconductor devices, specifically about 0.1% to about 12% by weight, more specifically about 3% to about 12% by weight It may be included in the content of. When the content of the epoxy resin satisfies the above range, it is possible to better implement the adhesive strength and strength of the epoxy resin composition after curing.
(B) 경화제(B) curing agent
상기 경화제로는, 반도체 소자 밀봉용으로 일반적으로 사용되는 경화제들이 제한없이 사용될 수 있다. 구체적으로, 상기 경화제로 페놀아랄킬형 페놀수지, 페놀노볼락형 페놀수지, 자일록(xylok)형 페놀수지, 크레졸 노볼락형 페놀수지, 나프톨형 페놀수지, 테르펜형 페놀수지, 다관능형 페놀수지, 디시클로펜타디엔계 페놀수지, 비스페놀 A와 레졸로부터 합성된 노볼락형 페놀수지 등과 같은 페놀 수지가 사용될 수 있다.As the curing agent, curing agents generally used for sealing semiconductor devices may be used without limitation. Specifically, as the curing agent, a phenol aralkyl type phenol resin, a phenol phenol novolak phenol resin, a xylox phenol resin, a cresol novolak phenol resin, a naphthol phenol resin, a terpene phenol resin, a polyfunctional phenol resin, Phenolic resins such as dicyclopentadiene-based phenol resins, novolak-type phenol resins synthesized from bisphenol A and resol and the like can be used.
구체적으로는, 상기 경화제는 페놀노볼락형 페놀수지, 자일록형 페놀수지, 페놀아랄킬형 페놀수지 및 다관능형 페놀수지 중 하나 이상을 포함할 수 있다. Specifically, the curing agent may include one or more of phenol novolak-type phenol resin, xylox phenol resin, phenol aralkyl type phenol resin, and polyfunctional phenol resin.
상기 페놀노볼락형 페놀수지는, 예를 들면, 하기 [화학식 4]로 표시되는 페놀노볼락형 패놀수지일 수 있으며, 상기 페놀아랄킬형 페놀수지는 예를 들면, 하기 [화학식 5]로 표시되는 분자 중에 바이페닐 유도체를 포함하는 노볼락 구조의 페놀아랄킬형 페놀수지일 수 있다. 또한, 상기 자일록형 페놀수지는, 예를 들면, 하기 [화학식 6]으로 표시되는 자일록(xylok)형 페놀수지일 수 있으며, 상기 다관능형 페놀수지는, 예를 들면, 하기 [화학식 7]로 표시되는 반복 단위를 포함하는 다관능형 페놀수지일 수 있다.The phenol novolak type phenol resin may be, for example, a phenol novolak type phenol resin represented by the following [Formula 4], and the phenol aralkyl type phenol resin is, for example, represented by the following [Formula 5] It may be a phenol aralkyl type phenol resin having a novolak structure containing a biphenyl derivative in a molecule thereof. In addition, the xylol-type phenolic resin may be, for example, a xylok-type phenolic resin represented by the following [Formula 6], and the polyfunctional phenolic resin is, for example, represented by the following [Formula 7] It may be a polyfunctional phenol resin containing the repeating unit represented.
[화학식 4][Formula 4]
Figure PCTKR2017001385-appb-I000008
Figure PCTKR2017001385-appb-I000008
상기 [화학식 4]에서 d는 1 내지 7이다.In [Formula 4] d is 1 to 7.
[화학식 5][Formula 5]
Figure PCTKR2017001385-appb-I000009
Figure PCTKR2017001385-appb-I000009
상기 [화학식 5]에서, e의 평균치는 1 내지 7이다.In [Formula 5], the average value of e is 1 to 7.
[화학식 6] [Formula 6]
Figure PCTKR2017001385-appb-I000010
Figure PCTKR2017001385-appb-I000010
상기 [화학식 6]에서, f의 평균치는 0 내지 7이다.In [Formula 6], the average value of f is 0 to 7.
[화학식 7] [Formula 7]
Figure PCTKR2017001385-appb-I000011
Figure PCTKR2017001385-appb-I000011
상기 [화학식 7]에서 g의 평균치는 1 내지 7이다.In Formula [7], the average value of g is 1 to 7.
상기 화학식 4로 표시되는 페놀노볼락형 페놀수지는 가교점 간격이 짧아, 에폭시 수지와 반응할 경우 가교밀도가 높아져 그 경화물의 유리전이온도를 높일 수 있고, 이에 따라 경화물 선팽창계수를 낮추어 반도체 소자 패키지의 휨을 억제할 수 있다. 상기 화학식 5로 표시되는 페놀아랄킬형 페놀수지는 에폭시 수지와 반응하여 탄소층(char)을 형성하여 주변의 열 및 산소의 전달을 차단함으로써 난연성을 달성하게 된다. 상기 화학식 6으로 표시되는 자일록형 페놀수지는 수지 조성물의 유동성 및 신뢰성 강화 효과가 있다.. 상기 화학식 7로 표시되는 반복단위를 포함하는 다관능형 페놀수지는 에폭시 수지 조성물의 고온 휨 특성 강화 효과가 있다.The phenol novolak type phenolic resin represented by Chemical Formula 4 has a short crosslinking point spacing, and when reacted with an epoxy resin, the crosslinking density becomes high, thereby increasing the glass transition temperature of the cured product. The curvature of a package can be suppressed. The phenol aralkyl type phenol resin represented by Chemical Formula 5 forms a carbon layer (char) by reacting with an epoxy resin to achieve flame retardancy by blocking transfer of heat and oxygen around. The xylol-type phenolic resin represented by Chemical Formula 6 has an effect of enhancing the fluidity and reliability of the resin composition. The polyfunctional phenolic resin including the repeating unit represented by Chemical Formula 7 has an effect of enhancing the high temperature bending property of the epoxy resin composition. .
이들 경화제는 단독 혹은 병용하여 사용될 수 있으며, 경화제에 에폭시 수지, 경화 촉진제, 이형제, 커플링제, 및 응력완화제 등의 기타 성분과 멜트 마스터 배치와 같은 선반응을 시켜 만든 부가 화합물로도 사용할 수 있다.These curing agents may be used alone or in combination, and may also be used as an addition compound made by performing a linear reaction such as a melt master batch with other components such as an epoxy resin, a curing accelerator, a releasing agent, a coupling agent, and a stress relaxation agent.
상기 경화제는 에폭시 수지 조성물 중 약 0.1 내지 약 13 중량%, 구체적으로 약 0.1 내지 약 10 중량%, 더욱 구체적으로 약 0.1 내지 약 8 중량%으로 포함될 수 있다. 경화제의 함량이 상기의 범위를 만족할 경우, 에폭시 수지 조성물의 경화도 및 경화물의 강도가 우수하다.The curing agent may be included in about 0.1 to about 13% by weight, specifically about 0.1 to about 10% by weight, more specifically about 0.1 to about 8% by weight of the epoxy resin composition. When the content of the curing agent satisfies the above range, the curing degree of the epoxy resin composition and the strength of the cured product are excellent.
상기 에폭시 수지와 경화제와의 배합비는 패키지에서의 기계적 성질 및 내습 신뢰성의 요구에 따라 조절될 수 있다. 예를 들면, 경화제에 대한 에폭시 수지의 화학 당량비가 약 0.95 내지 약 3정도일 수 있으며, 구체적으로 약 1 내지 약 2 정도, 더욱 구체적으로 약 1 내지 약 1.75 정도일 수 있다. 에폭시 수지와 경화제의 배합비가 상기의 범위를 만족할 경우, 에폭시 수지 조성물 경화 후에 우수한 강도를 구현할 수 있다.The blending ratio of the epoxy resin and the curing agent may be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package. For example, the chemical equivalent ratio of the epoxy resin to the curing agent may be about 0.95 to about 3, specifically about 1 to about 2, more specifically about 1 to about 1.75. When the compounding ratio of the epoxy resin and the curing agent satisfies the above range, it is possible to implement excellent strength after curing the epoxy resin composition.
(C) 무기 충전제 (C) inorganic filler
상기 무기 충전제로는 반도체 밀봉재에 사용되는 일반적인 무기 충전제들이 제한없이 사용될 수 있으며, 특별히 한정되지 않는다. 예를 들면, 상기 무기 충전제로는 용융실리카, 결정성실리카, 탄산칼슘, 탄산마그네슘, 알루미나, 마그네시아, 클레이(clay), 탈크(talc), 규산칼슘, 산화티탄, 산화안티몬, 유리섬유 등이 사용될 수 있다. 이들은 단독 또는 혼합하여 사용될 수 있다. As the inorganic filler, general inorganic fillers used in semiconductor sealing materials may be used without limitation, and are not particularly limited. For example, as the inorganic filler, fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. may be used. Can be. These may be used alone or in combination.
예를 들어, 저응력화를 위해서 선팽창계수가 낮은 용융실리카를 사용할 수 있다. 용융실리카는 진비중이 2.3 이하인 비결정성 실리카를 의미하는 것으로 결정성 실리카를 용융하여 만들거나 다양한 원료로부터 합성한 비결정성 실리카도 포함된다. 용융실리카의 형상 및 입경은 특별히 한정되지는 않지만, 평균 입경 약 5 내지 약 30㎛의 구상용융실리카를 약 50 내지 약 99중량%, 평균입경 약 0.001 내지 약 1㎛의 구상 용융실리카를 약 1 내지 약 50중량%를 포함한 용융실리카 혼합물을 전체 충전제에 대하여 약 40 내지 약 100중량%가 되도록 포함하는 것이 좋다. 또한, 용도에 맞춰 그 최대 입경을 약 45㎛, 약 55㎛, 및 약 75㎛ 중 어느 하나로 조정해서 사용할 수가 있다. 상기 구상 용융실리카에는 도전성의 카본이 실리카 표면에 이물질로서 포함되는 경우가 있으나 극성 이물질의 혼입이 적은 물질을 선택하는 것도 중요하다.For example, molten silica having a low coefficient of linear expansion may be used to reduce stress. Fused silica refers to amorphous silica having a specific gravity of 2.3 or less, and also includes amorphous silica made by melting crystalline silica or synthesized from various raw materials. The shape and particle diameter of the molten silica are not particularly limited, but about 1 to about spherical molten silica having a spherical molten silica having an average particle diameter of about 5 to about 30 µm and an average particle diameter of about 0.001 to about 1 µm. Preferably, the molten silica mixture, including about 50% by weight, comprises from about 40% to about 100% by weight of the total filler. Moreover, according to a use, the maximum particle diameter can be adjusted to any one of about 45 micrometers, about 55 micrometers, and about 75 micrometers, and can be used. In the spherical molten silica, conductive carbon may be included as a foreign material on the silica surface, but it is also important to select a material containing less polar foreign matter.
무기 충전제의 사용량은 성형성, 저응력성, 및 고온강도 등의 요구 물성에 따라 다르다. 구체예에서는 상기 무기 충전제는 에폭시 수지 조성물 중 약 70 내지 약 95중량%, 예를 들면 약 80중량% 내지 약 90중량% 또는 약 83중량% 내지 약 97중량%로 포함될 수 있다. 상기 범위에서, 에폭시 수지 조성물의 난연성, 유동성 및 신뢰성을 확보할 수 있다.The amount of the inorganic filler used depends on the required physical properties such as formability, low stress, and high temperature strength. In embodiments, the inorganic filler may be included in about 70 to about 95% by weight, for example about 80% to about 90% or about 83% to about 97% by weight of the epoxy resin composition. Within this range, flame retardancy, fluidity and reliability of the epoxy resin composition can be ensured.
(D) 아민기를 2개 이상 포함하는 방향족 모노머(D) an aromatic monomer containing two or more amine groups
본 발명의 에폭시 수지 조성물은 아민기를 2개 이상 포함하는 방향족 모노머를 포함한다. 상기 아민기를 2개 이상 포함하는 방향족 모노머를 첨가할 경우, 아민기와 에폭시 수지의 에폭시가 반응하여 가교 결합(crosslnking)이 유도되고, 이로 인해 질화실리콘막과의 접착력이 향상되고, 성형 후 강도를 향상시키는 효과가 발생한다. 또한, 방향족 모노머 첨가로 인해 에폭시 수지 내의 방향족 환의 함유율이 증가하여 난연성이 향상되는 효과가 있다.The epoxy resin composition of this invention contains the aromatic monomer containing two or more amine groups. When an aromatic monomer containing two or more amine groups is added, crosslinking is induced by the reaction between the amine and the epoxy of the epoxy resin, thereby improving adhesion to the silicon nitride film and improving strength after molding. Effect occurs. In addition, the addition of an aromatic monomer has an effect of increasing the content of the aromatic ring in the epoxy resin to improve flame retardancy.
상기 아민기를 2개 이상 포함하는 방향족 모노머로는, 예를 들면, m-페닐렌디아민, 2,3-디아미노나프탈렌, 3,3'-디아미노벤지딘, 톨리딘, 3,3'-디히드록시벤지딘 또는 이들의 조합을 들 수 있으나, 이에 한정되는 것은 아니다.As an aromatic monomer containing two or more said amine groups, it is m-phenylenediamine, 2, 3- diamino naphthalene, 3,3'- diaminobenzidine, tolidine, 3,3'- dihydride, for example. Hydroxybenzidine or a combination thereof, but is not limited thereto.
한편, 상기 아민기를 2개 이상 포함하는 방향족 모노머는 에폭시 수지 조성물 중 약 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 또는 1.0중량%로 포함될 수 있다. 또한, 상기 아민기를 2개 이상 포함하는 방향족 모노머는 에폭시 수지 조성물 중 약 상기 수치 중 하나 이상 및 약 상기 수치 중 하나 이하의 범위로 포함될 수 있다. 예를 들어, 상기 아민기를 2개 이상 포함하는 방향족 모노머는 에폭시 수지 조성물 중 약 0.1 내지 약 1중량%, 구체적으로 약 0.2중량% 내지 약 0.3중량% 또는 약 0.5중량% 내지 약 1.0중량%로 포함될 수 있다. 상기 범위에서, 접착력 및 강도 향상 효과가 있다. On the other hand, the aromatic monomer containing two or more amine groups may be included in about 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1.0% by weight of the epoxy resin composition. In addition, the aromatic monomer including two or more amine groups may be included in the range of about one or more of the above numerical values and about one or less of the above numerical values in the epoxy resin composition. For example, the aromatic monomer including two or more amine groups may be included in about 0.1 to about 1% by weight, specifically about 0.2 to about 0.3% or about 0.5 to about 1.0% by weight of the epoxy resin composition. Can be. In the above range, there is an effect of improving adhesion and strength.
(E) 반응성 러버(E) reactive rubber
본 발명의 에폭시 수지 조성물은, 필요에 따라, 반응성 러버를 추가로 포함할 수 있다. 상기 반응성 러버는 에폭시 수지 조성물의 Toughness 및 Flow balance를 조정하기 위한 것이다. The epoxy resin composition of this invention can contain a reactive rubber further as needed. The reactive rubber is for adjusting the toughness and flow balance of the epoxy resin composition.
상기 반응성 러버는 반응성기로 수산기, 카르복시기, 아민기, 에폭시기 또는 이들의 조합을 포함할 수 있으나, 이에 한정되는 것은 아니다. The reactive rubber may include a hydroxyl group, a carboxyl group, an amine group, an epoxy group, or a combination thereof, but is not limited thereto.
상기 반응성 러버는 에폭시 수지 조성물 중 약 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 또는 1.0중량%로 포함될 수 있다. 또한, 상기 아민기를 2개 이상 포함하는 방향족 모노머는 에폭시 수지 조성물 중 약 상기 수치 중 하나 이상 및 약 상기 수치 중 하나 이하의 범위로 포함될 수 있다. 예를 들어, 상기 반응성 러버는 에폭시 수지 조성물 중 약 0.1 내지 약 0.7 중량%, 구체적으로 약 0.1 내지 0.5 중량%로 포함될 수 있다. 상기 범위에서 터프니스(Toughness) 및 플로우 밸런스(Flow balance)를 적절하게 조절할 수 있다.The reactive rubber may be included in about 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1.0 weight percent of the epoxy resin composition. In addition, the aromatic monomer including two or more amine groups may be included in the range of about one or more of the above numerical values and about one or less of the above numerical values in the epoxy resin composition. For example, the reactive rubber may be included in about 0.1 to about 0.7% by weight, specifically about 0.1 to 0.5% by weight of the epoxy resin composition. Toughness and flow balance can be appropriately adjusted in the above range.
구체적으로는, 상기 반응성 러버는, 카르복실 터미네이티드 부타디엔 아크릴로니트릴, 아민-테미네이티드 부타디엔, 아민-터미네이티드 부타디엔-아크릴로니트릴, 에폭시-터미네이티드 부타디엔, 에폭시-터미네이티드 부타디엔-아크릴로니트릴 또는 이들의 조합을 포함하는 것일 수 있으나, 이에 한정되는 것은 아니다. Specifically, the reactive rubber is carboxyl terminated butadiene acrylonitrile, amine-terminated butadiene, amine-terminated butadiene-acrylonitrile, epoxy-terminated butadiene, epoxy-terminated butadiene -Acrylonitrile or combinations thereof, but is not limited thereto.
한편, 본 발명의 에폭시 수지 조성물은 상기 에폭시 수지(A), 경화제(B), 2개 이상의 아민기를 포함하는 방향족 모노머(D) 및/또는 반응성 러버(E) 각각에 1종 또는 2종 이상의 성분을 포함할 수 있다. 이때, 상기 에폭시 수지(A), 경화제(B), 2개 이상의 아민기를 포함하는 방향족 모노머(D) 및 반응성 러버(E)의 함량을 특정 조건을 만족하도록 함으로써, 에폭시 수지 조성물의 강도, 터프니스(Toughness) 및 플로우 발란스(Flow balance)를 적절하게 조절할 수 있다. 구체적으로는, 하기 식 (1)로 표시되는 T가 약 1.2 내지 약 2.0이 되도록 에폭시 수지 조성물을 제조할 경우, 강도, 터프니스(Toughness) 및 플로우 발란스(Flow balance)가 모두 우수한 에폭시 수지 조성물을 얻을 수 있다. 예를 들어, 상기 식 (1)로 표시되는 T는 약 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9 또는 2.0일 수 있다. 또한 상기 식 (1)로 표시되는 T는 약 상기 수치 중 하나 이상 및 약 상기 수치 중 하나 이하의 범위일 수 있다.On the other hand, the epoxy resin composition of the present invention is one or two or more components in each of the epoxy resin (A), the curing agent (B), the aromatic monomer (D) and / or the reactive rubber (E) containing two or more amine groups. It may include. At this time, the content of the epoxy resin (A), the curing agent (B), the aromatic monomer (D) containing two or more amine groups and the reactive rubber (E) to satisfy the specific conditions, the strength and toughness of the epoxy resin composition Toughness and flow balance can be properly adjusted. Specifically, when the epoxy resin composition is prepared such that T represented by the following formula (1) is about 1.2 to about 2.0, an epoxy resin composition excellent in all of strength, toughness and flow balance may be used. You can get it. For example, T represented by Formula (1) may be about 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9 or 2.0. In addition, T represented by the formula (1) may be in the range of at least one of the above numerical values and at most one of the above numerical values.
식 (1): T = Ta / (Tb + Tc + Td)Equation (1): T = Ta / (Tb + Tc + Td)
상기 식 (1)에서, Ta, Tb, Tc 및 Td는 각각 하기 식 (2), 식 (3), 식 (4) 및 식(5)로 표시되는 값이다.In said Formula (1), Ta, Tb, Tc, and Td are the values represented by following formula (2), formula (3), formula (4), and formula (5), respectively.
식 (2):
Figure PCTKR2017001385-appb-I000012
Equation (2):
Figure PCTKR2017001385-appb-I000012
상기 식 (2)에서, [Ah]는 조성물 내에 포함되는 h번째 에폭시 수지의 중량%이고, Eq(Ah)는 h번째 에폭시 수지의 당량이며, l은 1 내지 3의 정수이다. In the formula (2), [A h ] is the weight percent of the h-th epoxy resin included in the composition, Eq (A h ) is the equivalent of the h-th epoxy resin, and l is an integer of 1 to 3.
식 (3):
Figure PCTKR2017001385-appb-I000013
Equation (3):
Figure PCTKR2017001385-appb-I000013
상기 식 (3)에서, [Bi]는 조성물 내에 포함되는 i번째 경화제의 중량%이고, Eq(Bi)는 i번째 경화제의 당량이며, m은 1 내지 3의 정수이다. In the formula (3), [Bi] is the weight% of the i-th curing agent included in the composition, Eq (Bi) is the equivalent of the i-th curing agent, m is an integer of 1 to 3.
식 (4):
Figure PCTKR2017001385-appb-I000014
Equation (4):
Figure PCTKR2017001385-appb-I000014
상기 식 (4)에서, [Cj]는 조성물 내에 포함되는 j번째 아민기를 2개 이상 포함하는 방향족 모노머의 중량%이고, Eq(Cj)는 상기 j번째 방향족 모노머의 당량이며, n은 1 내지 3의 정수이다. In the formula (4), [Cj] is the weight% of the aromatic monomer containing two or more j-th amine groups included in the composition, Eq (Cj) is the equivalent of the j-th aromatic monomer, n is 1 to 3 Is an integer.
식 (5):
Figure PCTKR2017001385-appb-I000015
Equation (5):
Figure PCTKR2017001385-appb-I000015
상기 식 (5)에서, [Dk]는 조성물 내에 포함되는 k번째 반응성 러버의 중량%이고, Eq(Dk)는 상기 k번째 반응성 러버의 당량이며, o는 1 내지 3의 정수이다. In the formula (5), [Dk] is the weight percent of the k-th reactive rubber included in the composition, Eq (Dk) is the equivalent of the k-th reactive rubber, and o is an integer of 1 to 3.
(F) 기타 성분(F) other ingredients
상기 에폭시 수지 조성물은, 상기한 성분들 이외에, 필요에 따라, 경화촉진제, 커플링제 및 착색제 중 하나 이상을 더 포함할 수 있다.In addition to the above components, the epoxy resin composition may further include one or more of a curing accelerator, a coupling agent, and a colorant, as necessary.
경화 촉진제는 에폭시 수지와 경화제의 반응을 촉진하는 물질이다. 상기 경화 촉진제로는, 예를 들면, 3급 아민, 유기금속화합물, 유기인화합물, 이미다졸, 및 붕소화합물 등이 사용 가능하다. 3급 아민에는 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디에틸아미노에탄올, 트리(디메틸아미노메틸)페놀, 2-2-(디메틸아미노메틸)페놀, 2,4,6-트리스(디아미노메틸)페놀과 트리-2-에틸헥실산염 등이 있다. A hardening accelerator is a substance which accelerates reaction of an epoxy resin and a hardening | curing agent. As said hardening accelerator, a tertiary amine, an organometallic compound, an organophosphorus compound, an imidazole, a boron compound, etc. can be used, for example. Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris (diaminomethyl ) Phenol and tri-2-ethylhexyl acid salt.
상기 유기 금속화합물의 구체적인 예로는, 크로뮴아세틸아세토네이트, 징크아세틸아세토네이트, 니켈아세틸아세토네이트 등이 있다. 유기인화합물에는 트리스-4-메톡시포스핀, 테트라부틸포스포늄브로마이드, 테트라페닐포스포늄브로마이드, 페닐포스핀, 디페닐포스핀, 트리페닐포스핀, 트리페닐포스핀트리페닐보란, 트리페닐포스핀-1,4-벤조퀴논 부가물 등이 있다. 이미다졸류에는 2-페닐-4메틸이미다졸, 2-메틸이미다졸, 2-페닐이미다졸, 2-아미노이미다졸, 2-메틸-1-비닐이미다졸, 2-에틸-4-메틸이미다졸, 2-헵타데실이미다졸 등을 들 수 있으나, 이에 한정되는 것은 아니다. 상기 붕소화합물의 구체적인 예로는, 테트라페닐포스포늄-테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트, 테트라페닐보론염, 트리플루오로보란-n-헥실아민, 트리플루오로보란모노에틸아민, 테트라플루오로보란트리에틸아민, 테트라플루오로보란아민 등이 있다. 이외에도 1,5-디아자바이시클로[4.3.0]논-5-엔(1,5-diazabicyclo[4.3.0]non-5-ene:DBN), 1,8-디아자바이시클로[5.4.0]운덱-7-엔(1,8-diazabicyclo[5.4.0]undec-7-ene: DBU) 및 페놀노볼락 수지염 등을 들 수 있으나, 이에 한정되는 것은 아니다.Specific examples of the organometallic compound include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphate And pin-1,4-benzoquinones adducts. The imidazoles include 2-phenyl-4methylimidazole, 2-methylimidazole, # 2-phenylimidazole, # 2-aminoimidazole, 2-methyl-1-vinylimidazole, and 2-ethyl-4. -Methylimidazole, 2-heptadecylimidazole, and the like, but are not limited thereto. Specific examples of the boron compound include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoro Roboranetriethylamine, tetrafluoroboraneamine, and the like. In addition, 1, 5- diazabicyclo [4.3.0] non-5-ene (1, 5- diazabicyclo [4.3.0] non-5-ene: DBN), 1, 8- diazabicyclo [5.4. 0] undec-7-ene (1,8-diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolak resin salts, and the like.
보다 구체적으로는, 상기 경화 촉진제로 유기인화합물, 붕소화합물, 아민계, 또는 이미다졸계 경화 촉진제를 단독 혹은 혼합하여 사용할 수 있다. 상기 경화 촉진제는 에폭시 수지 또는 경화제와 선반응하여 만든 부가물을 사용하는 것도 가능하다.More specifically, an organophosphorus compound, a boron compound, an amine type, or an imidazole series hardening accelerator can be used individually or in mixture as said hardening accelerator. The curing accelerator may also use an epoxy resin or an adduct made by preliminary reaction with a curing agent.
본 발명에서 경화 촉진제의 사용량은 에폭시 수지 조성물 총 중량에 대하여 약 0.01 내지 약 2 중량% 정도일 수 있으며, 구체적으로 약 0.02 내지 약 1.5 중량% 정도, 더욱 구체적으로 약 0.05 내지 약 1 중량% 정도일 수 있다. 상기의 범위에서 에폭시 수지 조성물의 경화를 촉진하고 또한, 경화도도 좋은 장점이 있다.The amount of the curing accelerator in the present invention may be about 0.01 to about 2% by weight based on the total weight of the epoxy resin composition, specifically about 0.02 to about 1.5% by weight, more specifically about 0.05 to about 1% by weight. . In the above range, there is an advantage that the curing of the epoxy resin composition is promoted and the degree of curing is also good.
상기 커플링제는 실란 커플링제일 수 있다. 상기 실란 커플링제는 에폭시 수지와 무기 충전제 사이에서 반응하여, 에폭시 수지와 무기 충전제의 계면 강도를 향상시키는 것이면 되고, 그 종류가 특별히 한정되지 않는다. 상기 실란 커플링제의 구체적인 예로는 에폭시실란, 아미노실란, 우레이도실란, 머캅토실란 등을 들 수 있다. 상기 커플링제는 단독으로 사용할 수 있으며 병용해서 사용할 수도 있다.The coupling agent may be a silane coupling agent. The said silane coupling agent may react between an epoxy resin and an inorganic filler, and what is necessary is just to improve the interface strength of an epoxy resin and an inorganic filler, The kind is not specifically limited. Specific examples of the silane coupling agent include epoxysilane, aminosilane, ureidosilane, mercaptosilane, and the like. The coupling agents may be used alone or in combination.
상기 커플링제는 에폭시 수지 조성물 총 중량에 대해 약 0.01 내지 약 5 중량% 정도, 구체적으로 약 0.05 내지 약 3 중량% 정도, 더욱 구체적으로 약 0.1 내지 약 2 중량% 정도의 함량으로 포함될 수 있다. 상기 범위에서 에폭시 수지 조성물 경화물의 강도가 향상된다.The coupling agent may be included in an amount of about 0.01 to about 5 wt%, specifically about 0.05 to about 3 wt%, and more specifically about 0.1 to about 2 wt%, based on the total weight of the epoxy resin composition. In the above range, the strength of the cured epoxy resin composition is improved.
상기 착색제는 반도체 소자 밀봉재의 레이저 마킹을 위한 것으로, 예를 들면, 카본 블랙, 티탄질화물(titanium nitride), 티탄블랙(titan black) 또는 이들의 혼합물을 포함할 수 있다. The colorant is for laser marking of the semiconductor device encapsulant, and may include, for example, carbon black, titanium nitride, titanium black, or a mixture thereof.
상기 착색제는 에폭시 수지 조성물 중 약 0.05 내지 약 4.0중량%로 포함될 수 있다. 상기 범위에서, 에폭시 수지 조성물의 불완전 마킹이 일어나는 것을 방지하고, 마킹시 그을음이 발생하여 마킹성이 저하되는 것을 막을 수 있으며, 수지 조성물의 전기 절연성이 나빠지는 것을 막을 수 있다.The colorant may be included in about 0.05 to about 4.0% by weight of the epoxy resin composition. Within this range, incomplete marking of the epoxy resin composition can be prevented from occurring, soot can be prevented from occurring due to sooting during marking, and electrical insulation of the resin composition can be prevented from deteriorating.
이외에도, 상기 에폭시 수지 조성물은 본 발명의 목적을 해하지 않는 범위에서 고급 지방산; 고급 지방산 금속염; 및 에스테르계 왁스, 카르나우바 왁스 등의 이형제; 변성 실리콘 오일, 실리콘 파우더, 및 실리콘 레진 등의 응력완화제; 테트라키스[메틸렌-3-(3,5-디-터셔리부틸-4-히드록시페닐)프로피오네이트]메탄(Tetrakis[methylene-3-(3,5-di-tertbutyl-4-hydroxyphenyl)propionate]methane) 등의 산화방지제; 등을 필요에 따라 추가로 함유할 수 있다.In addition, the epoxy resin composition is higher fatty acid in the range that does not impair the object of the present invention; Higher fatty acid metal salts; And release agents such as ester waxes and carnauba waxes; Stress relieving agents such as modified silicone oil, silicone powder, and silicone resin; Tetrakis [methylene-3- (3,5-di-tertbutyl-4-hydroxyphenyl) propionate Tetrakis [methylene-3- (3,5-di-tertbutylbutyl-4-hydroxyphenyl) propionate] methane antioxidants such as methane); And the like may be further added as necessary.
한편, 상기 에폭시 수지 조성물은 상기와 같은 성분들을 헨셀 믹서(Hensel mixer)나 뢰디게 믹서(Lodige mixer)를 이용하여 소정의 배합비로 균일하게 충분히 혼합한 뒤, 롤밀(roll-mill)이나 니이더(kneader)로 용융 혼련한 후, 냉각, 분쇄 과정을 거쳐 최종 분말 제품을 얻는 방법으로 제조될 수 있다.On the other hand, the epoxy resin composition is uniformly sufficiently mixed with the above components at a predetermined mixing ratio using a Henschel mixer or Lodige mixer, and then roll-mill or kneader ( kneader), and then cooled and milled to obtain a final powder product.
상기와 같은 본 발명의 에폭시 수지 조성물은 질화 실리콘막과의 접착력이 우수하여 스택형 반도체 소자에 적용되어 우수한 내구성을 구현할 수 있다. 구체적으로는, 본 발명의 에폭시 수지 조성물은 질화 실리콘막과의 접착력이 약 40kgf 내지 약 60kgf, 구체적으로 약 44kgf 내지 약 50kgf 정도일 수 있다. The epoxy resin composition of the present invention as described above is excellent in adhesive force with the silicon nitride film can be applied to a stacked semiconductor device can implement excellent durability. Specifically, the epoxy resin composition of the present invention may have an adhesive strength of about 40 kgf to about 60 kgf, specifically about 44 kgf to about 50 kgf.
또한, 본 발명의 에폭시 수지 조성물은 상온(약 25℃)에서의 터프니스가 50kgf·mm 이상, 구체적으로, 약 50kgf·mm 내지 약 65kgf·mm 이며, 약 260℃에서의 터프니스가 약 26kgf·mm 이상, 더욱 구체적으로, 약 30kgf·mm 내지 약 45kgf·mm이다.Further, the epoxy resin composition of the present invention has a toughness at room temperature (about 25 ° C.) of 50 kgf · mm or more, specifically, about 50 kgf · mm to about 65 kgf · mm, and a toughness at about 260 ° C. of about 26 kgf · mm or more, more specifically, about 30 kgf · mm to about 45 kgf · mm.
또한, 상기 본 발명의 에폭시 수지 조성물은 방향족 아민의 첨가로 인해 조성물 내의 방향족 기의 함유량이 높아 난연성이 우수하다.In addition, the epoxy resin composition of the present invention is high in the content of the aromatic group in the composition due to the addition of the aromatic amine is excellent in flame retardancy.
상기와 같은 본 발명의 에폭시 수지 조성물은 반도체 소자, 특히 스택형 반도체 소자에 유용하게 적용될 수 있다. 본 발명에서 얻어진 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로써는 저압 트랜스퍼 성형법이 일반적으로 사용될 수 있다. 그러나, 인젝션(injection) 성형법이나 캐스팅(casting) 등의 방법으로도 성형이 가능하다.The epoxy resin composition of the present invention as described above can be usefully applied to semiconductor devices, in particular, stacked semiconductor devices. As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method can be generally used. However, molding can also be performed by injection molding or casting.
이하, 본 발명의 바람직한 실시예를 통해 본 발명의 구성 및 작용을 더욱 상세히 설명하기로 한다. 다만, 이는 본 발명의 바람직한 예시로 제시된 것이며 어떠한 의미로도 이에 의해 본 발명이 제한되는 것으로 해석될 수는 없다.Hereinafter, the configuration and operation of the present invention through the preferred embodiment of the present invention will be described in more detail. However, this is presented as a preferred example of the present invention and in no sense can be construed as limiting the present invention.
여기에 기재되지 않은 내용은 이 기술 분야에서 숙련된 자이면 충분히 기술적으로 유추할 수 있는 것이므로 그 설명을 생략하기로 한다.Details that are not described herein will be omitted since those skilled in the art can sufficiently infer technically.
실시예Example
이하, 구체적인 실시예를 통해 본 발명을 구체적으로 설명한다. Hereinafter, the present invention will be described in detail through specific examples.
실시예 및 비교예에서 사용된 성분의 구체적인 사양은 다음과 같다.Specific specifications of the components used in Examples and Comparative Examples are as follows.
(A) 에폭시 수지:(A) epoxy resin:
(A1) DIC사의 HP-4770(당량=204)을 사용하였다.(A1) HP-4770 (equivalent amount = 204) of DIC Corporation was used.
(A2) Japan epoxy resin사의 YX-8800(당량=181)를 사용하였다.(A2) YX-8800 (equivalent weight: 181) of Japan epoxy resin was used.
(B) 경화제:(B) curing agent:
(B1) Meiwa 사의 MEH-7500-3S(당량=103)을 사용하였다.(B1) MEH-7500-3S (equivalent value = 103) manufactured by Meiwa Corporation was used.
(B2) Meiwa 사의 MEH-7851S(당량=203)을 사용하였다.(B2) MEH-7851S (equivalent = 203) from Meiwa Corporation was used.
(C) 무기 충전제: (C) inorganic filler:
평균입경 20㎛인 용융실리카(Fused Silica)(Admatech)와 평균입경 0.5㎛인 합성 실리카(Synthetic Silica)(Admatech)을 혼합하여 9 : 1중량비로 사용하였다. Fused Silica (Admatech) having an average particle diameter of 20 µm and Synthetic Silica (Admatech) having an average particle diameter of 0.5 µm were mixed and used in a 9: 1 weight ratio.
(D) 방향족 모노머: m-페닐렌디아민(Sigma Aldrich 사)(당량=54)을 사용하였다.(D) Aromatic monomer: m-phenylenediamine (Sigma Aldrich) (equivalent weight = 54) was used.
(E) 반응성 러버: 카르복실 터미네이티드 부타디엔-아크릴로니트릴(Sigma aldrich 사)(당량=105)을 사용하였다.(E) Reactive rubber: A carboxyl terminated butadiene-acrylonitrile (Sigma aldrich) (equivalent weight = 105) was used.
(F) 경화촉진제: TPP(트리페닐포스핀, Hokko Chemical)를 사용하였다.(F) Curing accelerator: TPP (triphenylphosphine, Hokko Chemical) was used.
(G) 커플링제: GE Silicones 사의 Y-9669를 사용하였다.(G) Coupling agent: Y-9669 from GE Silicones was used.
(H) 착색제: Mitsubishi 사의 MA-100R을 사용하였다.(H) Colorant: MA-100R manufactured by Mitsubishi Corporation was used.
실시예Example  And 비교예Comparative example
상기 각 성분들을 하기 표 1의 조성(단위: 중량부)에 따라 각 성분들을 평량한 후 헨셀 믹서를 이용하여 균일하게 혼합하여 분말 상태의 1차 조성물을 제조하였다. 이후 연속 니이더를 이용하여 95℃에서 용융 혼련한 후 냉각 및 분쇄하여 반도체 소자 밀봉용 에폭시 수지 조성물을 제조하였다.The components were weighed according to the composition (unit: parts by weight) of Table 1 below, and then uniformly mixed using a Henschel mixer to prepare a primary composition in powder form. After the melt kneading at 95 ℃ using a continuous kneader after cooling and pulverizing to prepare an epoxy resin composition for sealing a semiconductor device.
구분division 실시예 1Example 1 실시예 2Example 2 실시예 3Example 3 비교예 1Comparative Example 1 비교예 2Comparative Example 2 비교예 3Comparative Example 3 비교예 4Comparative Example 4
(A)(A) (A1)(A1) 2.72.7 2.672.67 2.642.64 2.792.79 3.33.3 2.42.4 2.82.8
(A2)(A2) 6.36.3 6.236.23 6.166.16 6.516.51 7.77.7 5.65.6 6.46.4
(B)(B) (B1)(B1) 2.852.85 1.221.22 1.191.19 1.261.26 -- 0.90.9 1.341.34
(B2)(B2) 1.251.25 2.782.78 2.712.71 2.942.94 -- 2.12.1 2.942.94
(C)(C) 8585 8585 8585 8585 8585 8585 8585
(D)(D) 0.20.2 0.30.3 0.50.5 -- 2.22.2 1.31.3 0.010.01
(E)(E) 0.20.2 0.30.3 0.30.3 -- 0.30.3 1.21.2 0.010.01
(F)(F) 0.50.5 0.50.5 0.50.5 0.50.5 0.50.5 0.50.5 0.50.5
(G)(G) 0.70.7 0.70.7 0.70.7 0.70.7 0.70.7 0.70.7 0.70.7
(H)(H) 0.30.3 0.30.3 0.30.3 0.30.3 0.30.3 0.30.3 0.30.3
하기 물성 측정 방법에 따라, 질화실리콘막과의 부착력, 강도, Toughness, Flow balance 및 난연성을 측정하였다. 측정 결과는 하기 [표 2]에 나타내었다. According to the following physical property measurement method, the adhesion, strength, toughness, flow balance and flame retardance with the silicon nitride film were measured. The measurement results are shown in the following [Table 2].
물성 측정 방법Property measurement method
(1) 질화실리콘막과의 부착력(kgf): 질화실리콘이 증착된 실리콘 웨이퍼를 일정크기(30mm×30mm)로 절단하여 금형 내부에 고정한 후 준비된 금속 시험편에 표 1의 에폭시 수지 조성물을 금형온도 170 ~ 180℃, 이송압력 1000psi, 이송속도0.5 ~ 1cm/sec, 경화시간 120초의 조건으로 성형하여 경화 시편을 얻은 후, 시편을 170 ~ 180℃의 오븐에 넣어 4시간 동안 후경화(PMC; post mold cure)시킨 직후와, 60℃, 60% 상대습도 조건 하에서 120시간 동안 방치시킨 후 260℃에서 30초 동안 IR 리플로우(reflow)를 1회 통과시키는 것을 3회 반복하는 프리컨디션 조건하에서의 부착력을 각각 측정하였다. 이때 금속 시편에 닿는 에폭시 수지 조성물의 면적은 40±1mm2였으며, 부착력 측정은 각 측정 공정당 12개의 시편에 대하여 UTM(Universal Testing Machine)을 이용하여 측정한 후 평균값을 계산하였다.(1) Adhesion force with the silicon nitride film (kgf): The silicon wafer on which silicon nitride was deposited was cut to a predetermined size (30 mm x 30 mm) and fixed inside the mold, and then the epoxy resin composition of Table 1 was prepared on the prepared metal test piece. ~ 180 ℃, conveying pressure 1000psi, conveying speed 0.5 ~ 1cm / sec, curing time of 120 seconds to obtain a hardened specimen, and then put the specimen in an oven of 170 ~ 180 ℃ 4 hours post-cure (PMC; post mold Immediately after cure, and left for 120 hours at 60 ° C. and 60% relative humidity conditions, and then under precondition conditions, three times of one pass of IR reflow for 30 seconds at 260 ° C., respectively. Measured. At this time, the area of the epoxy resin composition in contact with the metal specimen was 40 ± 1mm 2 , the adhesion was measured by measuring the average value after measuring by using a universal testing machine (UTM) for 12 specimens for each measurement process.
(2) 강도(kgf·m/m2): ASTM D-790에 준하여 표준시편(125×12.6×6.4 mm)을 만든 후 175℃에서 4시간 경화시킨 이후에 UTM(Universal Testing Machine)을 이용하여 35℃, 260℃에서 측정하였다.(2) Strength (kgf · m / m 2 ): After making standard specimen (125 × 12.6 × 6.4 mm) according to ASTM D-790 and curing it at 175 ℃ for 4 hours, using UTM (Universal Testing Machine) It measured at 35 degreeC and 260 degreeC.
(3) Toughness(kgf·mm): ASTM D-790에 준하여 표준시편(125×12.6×6.4 mm)을 만든 후 175℃에서 4시간 경화시킨 이후에 UTM(Universal Testing Machine)을 이용하여 35℃, 260℃에서 측정하였다.(3) Toughness (kgf · mm): After making the standard specimen (125 × 12.6 × 6.4 mm) according to ASTM D-790 and curing it at 175 ℃ for 4 hours, use the universal testing machine (UTM) at 35 ℃, It measured at 260 degreeC.
(4) Flow balance: 표 1의 에폭시 수지 조성물로 MPS(Multi Plunger System) 성형기를 이용하여 기준 중량의 50~70% Tablet을 175℃에서 80초간 트랜스퍼 몰딩으로 성형시켜 도 1에 도시된 바와 같은 패키지를 제작하였다. 이후, 육안으로 패키지 표면에 관찰되는 a, b의 길이의 비율을 측정하였다.(4) Flow balance: The package as shown in Figure 1 by molding 50 ~ 70% Tablet of the reference weight by transfer molding at 175 ℃ for 80 seconds using the MPS (Multi Plunger System) molding machine with the epoxy resin composition of Table 1 Was produced. Then, the ratio of the length of a, b observed with the package surface visually was measured.
(5) 난연성: UL94 수직 연소 시험 방법에 의거하여 1/8인치 두께의 시편에 대하여 측정하였다.(5) Flame retardancy: measured on a 1/8 inch thick specimen in accordance with the UL94 vertical combustion test method.
구분division 부착력(kgf)Adhesive force (kgf) 강도(kgf·m/m2)Strength (kgfm / m 2 ) Toughness(kgf·mm)Toughness (kgfmm) flow balanceflow balance 난연성Flame retardant
상온Room temperature 260℃260 ℃
실시예 1Example 1 4444 15.515.5 5151 3636 0.780.78 V-0V-0
실시예 2Example 2 4545 15.815.8 5151 3838 0.820.82 V-0V-0
실시예 3Example 3 4949 16.216.2 5151 4242 0.910.91 V-0V-0
비교예 1Comparative Example 1 3838 15.115.1 4545 2121 0.800.80 V-1V-1
비교예 2Comparative Example 2 3333 15.215.2 4545 1919 0.650.65 V-0V-0
비교예 3Comparative Example 3 3636 14.914.9 4545 2121 0.730.73 V-1V-1
비교예 4Comparative Example 4 3737 15.415.4 4545 2424 0.960.96 V-0V-0
상기 [표 2]에 나타난 바와 같이, 아민기를 2개 이상 포함하는 방향족 모노머 0.1 내지 1.0중량%로 포함하는 실시예 1 ~ 4의 경우, 부착력, 강도, 터프니스, 플로우 발란스 및 난연성이 모두 우수하게 나타남을 알 수 있다. 이에 비해, 아민기를 2개 이상 포함하는 방향족 모노머를 포함하지 않거나(비교예 1), 아민기를 2개 이상 포함하는 방향족 모노머의 함량이 본 발명의 범위를 벗어나는 경우(비교예 2 ~ 4)에는 부착력, 강도, 터프니스 및 난연성 중 하나 이상의 물성이 저하됨을 확인할 수 있다.As shown in Table 2, in Examples 1 to 4 containing 0.1 to 1.0% by weight of an aromatic monomer containing two or more amine groups, all of adhesion, strength, toughness, flow balance and flame retardancy were excellent. It can be seen that. On the other hand, when the aromatic monomer containing two or more amine groups is not included (Comparative Example 1), or the content of the aromatic monomer containing two or more amine groups is outside the scope of the present invention (Comparative Examples 2 to 4), It can be seen that the physical properties of at least one of the strength, toughness and flame retardancy are reduced.

Claims (8)

  1. 에폭시 수지, 경화제, 무기 충전재 및 아민기를 2개 이상 포함하는 방향족 모노머를 포함하는 에폭시 수지 조성물이며,It is an epoxy resin composition containing an epoxy resin, a hardening | curing agent, an inorganic filler, and the aromatic monomer containing two or more amine groups,
    상기 아민기를 2개 이상 포함하는 방향족 모노머는 상기 에폭시 수지 조성물 내에 약 0.1 내지 약 1.0중량%로 포함되는 반도체 소자 밀봉용 에폭시 수지 조성물.The aromatic monomer containing two or more amine groups is contained in the epoxy resin composition in about 0.1 to about 1.0% by weight epoxy resin composition for sealing semiconductor elements.
  2. 제1항에 있어서,The method of claim 1,
    상기 아민기를 2개 이상 포함하는 방향족 모노머는 m-페닐렌디아민, 2,3-디아미노나프탈렌, 3,3'-디아미노벤지딘, 톨리딘, 3,3'-디히드록시벤지딘 또는 이들의 조합을 포함하는 반도체 소자 밀봉용 에폭시 수지 조성물.The aromatic monomer including two or more amine groups may be m-phenylenediamine, 2,3-diaminonaphthalene, 3,3'-diaminobenzidine, tolidine, 3,3'-dihydroxybenzidine or a combination thereof. Epoxy resin composition for sealing a semiconductor device comprising a.
  3. 제1항에 있어서,The method of claim 1,
    상기 에폭시 수지 조성물은 반응성 러버를 더 포함하는 에폭시 수지 조성물.The epoxy resin composition further comprises a reactive rubber.
  4. 제3항에 있어서,The method of claim 3,
    상기 반응성 러버는 수산기, 카르복시기, 아민기, 에폭시기 또는 이들의 조합을 포함하는 에폭시 수지 조성물.The reactive rubber is an epoxy resin composition comprising a hydroxyl group, a carboxyl group, an amine group, an epoxy group or a combination thereof.
  5. 제3항에 있어서,The method of claim 3,
    상기 반응성 러버는 카르복실 터미네이티드 부타디엔 아크릴로니트릴, 아민-테미네이티드 부타디엔, 아민-터미네이티드 부타디엔-아크릴로니트릴, 에폭시-터미네이티드 부타디엔, 에폭시-터미네이티드 부타디엔-아크릴로니트릴 또는 이들의 조합을 포함하는 에폭시 수지 조성물.The reactive rubber is carboxyl terminated butadiene acrylonitrile, amine-terminated butadiene, amine-terminated butadiene-acrylonitrile, epoxy-terminated butadiene, epoxy-terminated butadiene-acrylonitrile or Epoxy resin composition containing these combinations.
  6. 제3항에 있어서,The method of claim 3,
    상기 에폭시 수지 조성물은 하기 식 (1)로 표시되는 T가 약 1.2 내지 약 2.0인 에폭시 수지 조성물.The epoxy resin composition has an epoxy resin composition having T of about 1.2 to about 2.0 represented by the following formula (1).
    식 (1): T = Ta / (Tb + Tc + Td)Equation (1): T = Ta / (Tb + Tc + Td)
    상기 식 (1)에서, Ta, Tb, Tc 및 Td는 각각 하기 식 (2), 식(3), 식(4) 및 식(5)로 표시되는 값임.In the formula (1), Ta, Tb, Tc and Td are values represented by the following formula (2), formula (3), formula (4) and formula (5), respectively.
    식 (2):
    Figure PCTKR2017001385-appb-I000016
    Equation (2):
    Figure PCTKR2017001385-appb-I000016
    상기 식 (2)에서, [Ah]는 조성물 내에 포함되는 h번째 에폭시 수지의 중량%이고, Eq(Ah)는 h번째 에폭시 수지의 당량이며, l은 1 내지 3의 정수임. In the formula (2), [A h ] is the weight percent of the h-th epoxy resin included in the composition, Eq (A h ) is the equivalent of the h-th epoxy resin, l is an integer of 1 to 3.
    식 (3):
    Figure PCTKR2017001385-appb-I000017
    Equation (3):
    Figure PCTKR2017001385-appb-I000017
    상기 식 (3)에서, [Bi]는 조성물 내에 포함되는 i번째 경화제의 중량%이고, Eq(Bi)는 i번째 경화제의 당량이며, m은 1 내지 3의 정수임. In the formula (3), [Bi] is the weight percent of the i-th curing agent included in the composition, Eq (Bi) is the equivalent of the i-th curing agent, m is an integer of 1 to 3.
    식 (4):
    Figure PCTKR2017001385-appb-I000018
    Equation (4):
    Figure PCTKR2017001385-appb-I000018
    상기 식 (4)에서, [Cj]는 조성물 내에 포함되는 j번째 아민기를 2개 이상 포함하는 방향족 모노머의 중량%이고, Eq(Cj)는 상기 j번째 방향족 모노머의 당량이며, n은 1 내지 3의 정수임. In the formula (4), [Cj] is the weight% of the aromatic monomer containing two or more j-th amine groups included in the composition, Eq (Cj) is the equivalent of the j-th aromatic monomer, n is 1 to 3 Integer of.
    식 (5):
    Figure PCTKR2017001385-appb-I000019
    Equation (5):
    Figure PCTKR2017001385-appb-I000019
    상기 식 (5)에서, [Dk]는 조성물 내에 포함되는 k번째 반응성 러버의 중량%이고, Eq(Dk)는 상기 k번째 반응성 러버의 당량이며, o는 1 내지 3의 정수임. In the formula (5), [Dk] is the weight percent of the k-th reactive rubber included in the composition, Eq (Dk) is the equivalent of the k-th reactive rubber, o is an integer of 1 to 3.
  7. 제3항에 있어서,The method of claim 3,
    상기 에폭시 수지 조성물은 에폭시 수지 약 0.1중량% 내지 약 15중량%, 경화제 약 0.1중량% 내지 약 13중량%, 무기 충전재 약 70중량% 내지 약 95중량%, 아민기를 2개 이상 포함하는 방향족 모노머 약 0.1 내지 약 1.0중량% 및 반응성 러버 약 0.1 내지 약 1.0중량%를 포함하는 것인 에폭시 수지 조성물.The epoxy resin composition is about 0.1% to about 15% by weight epoxy resin, about 0.1% to about 13% by weight curing agent, about 70% to about 95% by weight inorganic filler, aromatic monomer containing two or more amine groups 0.1 to about 1.0 weight percent and about 0.1 to about 1.0 weight percent reactive rubber.
  8. 청구항 1 내지 7 중 어느 한 항의 에폭시 수지 조성물에 의해 밀봉된 반도체 소자.The semiconductor element sealed by the epoxy resin composition of any one of Claims 1-7.
PCT/KR2017/001385 2016-02-16 2017-02-08 Epoxy resin composition for sealing semiconductor device, and semiconductor device sealed by using same WO2017142251A1 (en)

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