WO2017163633A1

WO2017163633A1 - Substrate cleaning apparatus

Info

Publication number: WO2017163633A1
Application number: PCT/JP2017/004254
Authority: WO
Inventors: 天野　嘉文; 優樹伊藤; 健人久留巣
Original assignee: 東京エレクトロン株式会社
Priority date: 2016-03-22
Filing date: 2017-02-06
Publication date: 2017-09-28
Also published as: JP6671459B2; KR20180125474A; KR102629296B1; JPWO2017163633A1; CN108885985B; CN108885985A

Abstract

According to an embodiment of the present invention, a substrate cleaning apparatus for cleaning a substrate using a brush is provided with a substrate holding section, an arm, and a supply section. The substrate holding section holds the substrate such that the substrate can rotate. The arm supports the brush via a spindle such that the brush can rotate. The supply section supplies a treatment liquid to the substrate. The brush is provided with a main body section, a cleaning body, and a liquid receiving member. The main body section is connected to the spindle. The cleaning body is provided at a lower portion of the main body section, and is pressed to the substrate. The liquid receiving member is provided at the outer peripheral portion of the main body section, and is protruding from the outer peripheral portion of the main body section.

Description

Substrate cleaning device

The disclosed embodiment relates to a substrate cleaning apparatus.

Conventionally, as one of the substrate cleaning apparatuses for processing a substrate such as a semiconductor wafer, the substrate and the brush are rotated with each other while the brush is brought into contact with the substrate and the processing liquid is supplied to the brush from the outside of the brush. A substrate cleaning apparatus for cleaning a substrate is known (Patent Document 1).

Japanese Patent No. 4658914

However, when the substrate is cleaned using a brush and a processing liquid as in the above-described prior art, there is a problem that the processing liquid is easily scattered over a wide range as compared with the case where only the processing liquid is used. If the processing liquid is scattered over a wide area, the apparatus may be contaminated.

An object of one embodiment of the present invention is to provide a substrate cleaning apparatus that can suppress scattering of a processing solution.

A substrate cleaning apparatus according to an aspect of the embodiment is a substrate cleaning apparatus that cleans a substrate using a brush, and includes a substrate holding unit, an arm, and a supply unit. The substrate holding unit holds the substrate rotatably. The arm rotatably supports the brush via the spindle. The supply unit supplies the processing liquid to the substrate. The brush includes a main body, a cleaning body, and a liquid receiving member. The main body is connected to the spindle. The cleaning body is provided at the lower portion of the main body and is pressed against the substrate. The liquid receiving member is provided on the outer peripheral portion of the main body portion and protrudes from the outer peripheral portion of the main body portion.

According to one aspect of the embodiment, it is possible to provide a substrate cleaning apparatus capable of suppressing the scattering of the processing liquid.

FIG. 1 is a schematic plan view of a substrate processing system according to an embodiment. FIG. 2 is a schematic side view of the substrate processing system according to the embodiment. FIG. 3 is a schematic plan view of the second processing block. FIG. 4 is a schematic plan view of the second processing unit. FIG. 5 is a schematic side view of the second processing unit. FIG. 6 is a schematic side view of the back brush. FIG. 7 is a diagram illustrating a relationship between the liquid receiving member and the peripheral wall portion. FIG. 8 is a schematic side sectional view of the back surface cleaning unit. FIG. 9 is a schematic perspective view of the guide member. FIG. 10 is a schematic perspective view of the back brush. FIG. 11 is a schematic side view of the accommodating portion. FIG. 12 is a flowchart showing the processing procedure of the back surface cleaning processing. FIG. 13 is a diagram illustrating a positional relationship between the back brush and the first supply unit. FIG. 14 is a schematic plan view of the first processing unit. FIG. 15A is a schematic side view of the accommodating portion. FIG. 15B is a schematic side view of the accommodating portion. FIG. 15C is a schematic side view of the accommodating portion.

Hereinafter, embodiments of a substrate processing apparatus disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

<Configuration of substrate processing system>
First, the configuration of the substrate processing system 1 according to the embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic plan view of a substrate processing system 1 according to the embodiment. FIG. 2 is a schematic side view of the substrate processing system 1 according to the embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

As shown in FIG. 1, the substrate processing system 1 according to the embodiment includes a carry-in / out block 2, a processing block 3, and a delivery block 4. These are arranged in the order of the carry-in / out block 2, the delivery block 4 and the processing block 3.

The substrate processing system 1 transports the substrate loaded from the loading / unloading block 2, in this embodiment, a semiconductor wafer (hereinafter referred to as wafer W) to the processing block 3 via the delivery block 4, and processes it in the processing block 3. Further, the substrate processing system 1 returns the processed wafer W from the processing block 3 to the loading / unloading block 2 via the delivery block 4, and pays out from the loading / unloading block 2 to the outside. Hereinafter, the configuration of each of the blocks 2 to 4 will be described.

<Configuration of loading / unloading block 2>
The carry-in / out block 2 includes a placement unit 11 and a transport unit 12. A plurality of cassettes C that accommodate a plurality of wafers W in a horizontal state are placed on the placement unit 11.

The transport unit 12 is disposed adjacent to the placement unit 11 and includes a main transport device 13 therein. The main transfer device 13 transfers the wafer W between the placement unit 11 and the delivery block 4.

<Configuration of processing block 3>
As illustrated in FIG. 2, the processing block 3 includes a first processing block 3U and a second processing block 3L. The first processing block 3U and the second processing block 3L are spatially partitioned by a partition wall, a shutter, and the like, and are arranged side by side in the height direction. In the present embodiment, the first processing block 3U is arranged on the upper stage side, and the second processing block 3L is arranged on the lower stage side.

In the first processing block 3U, processing is performed on the wafer W with the circuit formation surface (hereinafter referred to as “front surface”) facing upward. On the other hand, in the second processing block 3L, processing is performed on the wafer W in a state where the back surface, which is the surface opposite to the front surface, faces upward. The configurations of the first processing block 3U and the second processing block 3L will be described.

<Configuration of first processing block 3U>
As shown in FIG. 1, the first processing block 3 </ b> U includes a transport unit 16, a first transport device 17, and a plurality of first processing units 18. The first transport device 17 is disposed inside the transport unit 16, and the plurality of first processing units 18 are disposed adjacent to the transport unit 16 outside the transport unit 16.

The first transfer device 17 transfers the wafer W between the delivery block 4 and the first processing unit 18. Specifically, the first transfer device 17 takes out the wafer W from the delivery block 4 and transfers it to the first processing unit 18, and the wafer W processed by the first processing unit 18 from the first processing unit 18. The process of taking out and carrying to the delivery block 4 is performed.

The first processing unit 18 performs a bevel cleaning process on the wafer W with the front surface facing upward. The bevel cleaning process is a process for removing particles, boat traces, and the like attached to the peripheral portion (bevel portion) of the wafer W.

For example, the first processing unit 18 includes a suction holding unit that rotatably holds the wafer W, and a bevel cleaning unit that physically cleans the peripheral portion of the wafer W by bringing a brush into contact with the peripheral portion of the wafer W. And a discharge unit that discharges the chemical toward the peripheral edge of the wafer W. The first processing unit 18 rotates the wafer W in a state where the back surface of the wafer W with the front surface facing upward is sucked and held by the suction holding unit. Then, the first processing unit 18 causes the brush of the bevel cleaning unit to contact the peripheral portion of the wafer W while discharging the chemical solution from the discharge unit toward the peripheral portion of the back surface of the rotating wafer W. Remove particles and the like adhering to the periphery. In this way, by combining chemical cleaning with a chemical solution and physical cleaning with a brush, the removal performance of particles, boat traces, and the like can be enhanced.

<Configuration of Second Processing Block 3L>
Next, the configuration of the second processing block 3L will be described with reference to FIG. FIG. 3 is a schematic plan view of the second processing block 3L.

As shown in FIG. 3, the second processing block 3 </ b> L includes a transport unit 26, a second transport device 27, and a plurality of second processing units 28. The second transport device 27 is disposed inside the transport unit 26, and the plurality of second processing units 28 are disposed adjacent to the transport unit 26 outside the transport unit 26.

The second transfer device 27 transfers the wafer W between the delivery block 4 and the second processing unit 28. Specifically, the second transfer device 27 takes out the wafer W from the delivery block 4 and transfers it to the second processing unit 28, and the wafer W processed by the second processing unit 28 from the second processing unit 28. The process of taking out and carrying to the delivery block 4 is performed.

The second processing unit 28 performs a back surface cleaning process for removing particles and the like attached to the back surface of the wafer W with respect to the wafer W with the back surface facing upward. Here, the configuration of the second processing unit 28 will be described with reference to FIGS. 4 and 5. FIG. 4 is a schematic plan view of the second processing unit 28. FIG. 5 is a schematic side view of the second processing unit 28.

As shown in FIGS. 4 and 5, the second processing unit 28 includes a chamber 201, a substrate holding unit 202, a recovery cup 203, a back surface cleaning unit 204, a first supply unit 205, and a second supply unit 206. And a peripheral wall portion 207.

The chamber 201 accommodates the substrate holding part 202, the recovery cup 203, the back surface cleaning part 204, the first supply part 205, the second supply part 206, and the peripheral wall part 207. An FFU (Fun Filter Unit) 211 that forms a downflow in the chamber 201 is provided at the ceiling of the chamber 201.

The substrate holding unit 202 rotates the main body 221 having a diameter larger than that of the wafer W, a plurality of gripping parts 222 provided on the upper surface of the main body 221, a support member 223 that supports the main body 221, and the support member 223. A driving unit 224 is provided. The number of gripping portions 222 is not limited to that shown in the figure.

The substrate holding unit 202 holds the wafer W by holding the peripheral edge of the wafer W using the plurality of holding units 222. As a result, the wafer W is held horizontally while being slightly separated from the upper surface of the main body 221.

In the second processing unit 28, the back surface cleaning process is performed on the wafer W with the back surface facing upward, in other words, the front surface facing downward. For this reason, if the second processing unit 28 uses a type that adsorbs the wafer W, such as the suction holding unit of the first processing unit 18, the front surface that is a circuit forming surface may be stained. In view of this, in the substrate processing system 1, a substrate holding unit 202 that grips the peripheral edge of the wafer W is used so as not to stain the circuit forming surface as much as possible.

The collection cup 203 is arranged so as to surround the substrate holding unit 202. At the bottom of the recovery cup 203, a liquid outlet 231 for discharging the chemical liquid discharged from the first supply unit 205 and the second supply unit 206 to the outside of the chamber 201, and for exhausting the atmosphere in the chamber 201 An exhaust port 232 is formed. The second processing unit 28 may include a mechanism for switching between a discharge destination of the chemical liquid discharged from the first supply unit 205 and a discharge destination of the chemical liquid discharged from the second supply unit 206.

The back surface cleaning unit 204 extends in the horizontal direction (here, the Y-axis direction) with the back surface brush 241, and supports the back surface brush 241 to be rotatable from above via the spindle 242, and swivels the arm 243. And a swivel lifting mechanism 244 for moving up and down.

The back surface cleaning unit 204 is connected to the first chemical liquid supply source 245a via a valve 244a, a flow rate regulator (not shown) or the like, and supplied with a second chemical liquid via the valve 244b, a flow rate regulator (not shown) or the like. Connected to source 245b. The back surface cleaning unit 204 is connected to the rinse liquid supply source 245c via a valve 244c, a flow rate regulator (not shown), or the like.

The back surface cleaning unit 204 is a first chemical liquid supplied from the first chemical liquid supply source 245a, a second chemical liquid supplied from the second chemical liquid supply source 245b, or a rinse liquid supplied from the rinse liquid supply source 245c (here, pure liquid) Water) can be discharged from the inside of the back brush 241 toward the wafer W. A specific configuration of the back surface cleaning unit 204 will be described later.

Here, it is assumed that the first chemical solution is SC-1 (mixed solution of ammonia, hydrogen peroxide and water) and the second chemical solution is DHF (dilute hydrofluoric acid). The second chemical solution is not limited to DHF.

The first supply unit 205 is disposed outside the peripheral wall unit 207. The first supply unit 205 includes a nozzle 251, a nozzle arm 252 that extends in the horizontal direction and supports the nozzle 251 from above, and a turning lift mechanism 253 that turns and lifts the nozzle arm 252.

The nozzle 251 is connected to the first chemical liquid supply source 255a via a valve 254a, a flow rate regulator (not shown), or the like. The nozzle 251 is connected to the rinse liquid supply source 255b via a valve 254b, a flow rate regulator (not shown), and the like. The first supply unit 205 discharges the first chemical supplied from the first chemical supply source 255a toward the wafer W. The first supply unit 205 discharges pure water supplied from the rinse liquid supply source 255b toward the wafer W.

The second supply unit 206 is disposed outside the peripheral wall unit 207. The second supply unit 206 includes a nozzle 261, a nozzle arm 262 that extends in the horizontal direction and supports the nozzle 261 from above, and a turning lift mechanism 263 that turns and lifts the nozzle arm 262.

The nozzle 261 is connected to the second chemical liquid supply source 265a via a valve 264a, a flow rate regulator (not shown), or the like. The nozzle 261 is connected to the rinse liquid supply source 265b via a valve 264b, a flow rate regulator (not shown), and the like. The second supply unit 206 discharges the second chemical solution supplied from the second chemical solution supply source 265a toward the wafer W. The second supply unit 206 discharges pure water supplied from the rinse liquid supply source 265b toward the wafer W.

The peripheral wall portion 207 is disposed outside the collection cup 203 so as to surround the substrate holding portion 202, and receives processing liquids such as a first chemical solution, a second chemical solution, and pure water scattered from the substrate holding portion 202. The peripheral wall portion 207 is connected to the lifting mechanism 271 and can be moved in the vertical direction by the lifting mechanism 271. That is, the peripheral wall portion 207 is configured to be able to change the height.

The second processing unit 28 is configured as described above, and rotates by holding the peripheral portion of the wafer W with the back surface facing upward by the substrate holding portion 202. Then, the second processing unit 28 removes particles and the like attached to the back surface of the wafer W using either the first supply unit 205 or the second supply unit 206 and the back surface cleaning unit 204.

In the chamber 201 of the second processing unit 28, the back surface brush 241 of the back surface cleaning unit 204, the nozzle 251 of the first supply unit 205, and the nozzle 261 of the second supply unit 206 are retracted from the main body 221. A position is provided. In each retracted position, accommodating portions 208a to 208c for accommodating the back brush 241, the nozzle 251 and the nozzle 261 are provided. In FIG. 4, the back surface cleaning unit 204, the first supply unit 205, and the second supply unit 206 are disposed at the retreat positions, and the back surface brush 241, the nozzle 251 and the nozzle 261 are stored in the storage units 208a to 208c, respectively. It shows how it is.

<Configuration of delivery block 4>
Next, the delivery block 4 will be described. As shown in FIGS. 1 and 2, inside the delivery block 4, a plurality of

transfer devices

15a and 15b, a first buffer unit 21U, a second buffer unit 21L, a

first delivery unit

22U, 2 delivery part 22L, the 1st inversion mechanism 23a, and the 2nd inversion mechanism 23b are arrange | positioned.

The first buffer unit 21U, the second buffer unit 21L, the first delivery unit 22U, the second delivery unit 22L, the first reversing mechanism 23a, and the second reversing mechanism 23b are arranged side by side in the height direction. Specifically, the first delivery unit 22U, the first buffer unit 21U, the second buffer unit 21L, the second delivery unit 22L, the first reversing mechanism 23a, and the second reversing mechanism 23b are arranged in this order from the top. (See FIG. 2).

In addition, a buffer part (here 1st buffer part 21U and 2nd buffer part 21L), a delivery part (here 1st delivery part 22U and 2nd delivery part 22L), a reverse mechanism (here 1st reverse mechanism) The number of 23a and the second reversing mechanism 23b) and the arrangement in the height direction are not limited to those illustrated. For example, inside the delivery block 4, the delivery unit, the buffer unit, the reversing mechanism, the delivery unit, and the reversing mechanism may be arranged in this order from the top.

The

transfer devices

15a and 15b are provided with a lifting mechanism (not shown), and the wafer W is moved with respect to the first delivery section 22U and the like arranged in the height direction by moving in the vertical direction using the lifting mechanism. Carry in and out. The transfer device 15a accesses the first delivery unit 22U and the like from the Y axis positive direction side of the first delivery unit 22U and the like. In addition, the transfer device 15b accesses the first delivery unit 22U and the like from the Y axis negative direction side of the first delivery unit 22U and the like.

The first buffer unit 21U, the second buffer unit 21L, the first delivery unit 22U, and the second delivery unit 22L are modules that can accommodate the wafers W in multiple stages. Among these, the first buffer unit 21U and the second buffer unit 21L are accessed by the main transport device 13 and the

transfer devices

15a and 15b.

<Configuration of control device>
The substrate processing system 1 includes a control device 5 (see FIG. 1). The control device 5 is a computer, for example, and includes a control unit 51 and a storage unit 52. The storage unit 52 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 51 is, for example, a CPU (Central Processing Unit), and controls the operation of the substrate processing system 1 by reading and executing a program stored in the storage unit 52.

Note that such a program may be recorded in a computer-readable storage medium and installed in the storage unit 52 of the control device 5 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card. Note that the control unit 51 may be configured only by hardware without using a program.

<Wafer transfer flow>
Next, an example of the transfer flow of the wafer W in the substrate processing system 1 will be briefly described. In the substrate processing system 1, first, the main transfer apparatus 13 collects a plurality of unprocessed wafers W from the cassette C and stores them in the first buffer unit 21U. Subsequently, the transfer device 15a takes out the unprocessed wafer W from the first buffer unit 21U and transfers it to the first delivery unit 22U, and the first transfer device 17 of the first processing block 3U receives the first delivery unit 22U. The wafer W is taken out from the wafer W and transferred to the first processing unit 18, and the first processing unit 18 performs a bevel cleaning process on the wafer W. When the bevel cleaning process is completed, the first transfer device 17 takes out the wafer W after the bevel cleaning process from the first processing unit 18 and accommodates it in the first delivery unit 22U.

Subsequently, the transfer device 15a takes out the bevel-cleaned wafer W from the first delivery unit 22U and transfers it to the first reversing mechanism 23a. The first reversing mechanism 23a reverses the front and back of the wafer W, The transfer device 15b takes out the wafer W from the first reversing mechanism 23a and transfers it to the second delivery unit 22L. Subsequently, the second transfer device 27 of the second processing block 3L takes out the wafer W from the second delivery unit 22L and transfers it to the second processing unit 28. The second processing unit 28 cleans the back surface of the wafer W. Process. When the back surface cleaning process is completed, the second transfer device 27 takes out the wafer W that has been subjected to the back surface cleaning process from the second processing unit 28 and accommodates it in the second delivery unit 22L.

Subsequently, the transfer device 15b takes out the wafer W from the second delivery unit 22L and transfers it to the second reversing mechanism 23b. The second reversing mechanism 23b reverses the front and back of the wafer W, and the transfer device 15a Then, the wafer W is taken out from the second reversing mechanism 23b and transferred to the second buffer unit 21L, and the main transfer device 13 collects a plurality of wafers W from the second buffer unit 21L after the bevel cleaning process and the back surface cleaning process. Take out and store in cassette C. Thereby, a series of substrate processing is completed.

<Configuration of back surface cleaning unit>
Next, a specific configuration of the back surface cleaning unit 204 will be described with reference to FIGS. First, the configuration of the back brush 241 will be described with reference to FIGS. 6 and 7. FIG. 6 is a schematic side view of the back brush 241. FIG. 7 is a view showing the relationship between the liquid receiving member and the peripheral wall portion 207.

As shown in FIG. 6, the back surface brush 241 includes a main body portion 101, a connection portion 102, a cleaning body 103, and a liquid receiving member 104.

The main body 101 has a cylindrical shape, and is connected to the spindle 242 (see FIG. 4) via the connecting portion 102. The main body 101 includes a first main body 111 and a second main body 112. The first main body 111 and the second main body 112 are cylindrical members having the same diameter, and the main body 101 is formed by attaching the second main body 112 to the lower portion of the first main body 111. .

The connecting portion 102 has a cylindrical shape with a smaller diameter than the main body portion 101. The connecting portion 102 is provided in the first main body 111 and protrudes upward from the first main body 111. Further, the connecting portion 102 has an insertion hole 121. By inserting the spindle 242 into the insertion hole 121 and fixing the spindle 242 and the connecting portion 102 with a screw or the like, the main body portion 101 is attached to the spindle 242. Fixed.

The cleaning body 103 is provided below the second main body 112 and is pressed against the wafer W. The cleaning body 103 is configured by a large number of hair bundles, but is not limited thereto, and may be configured by, for example, a sponge or the like.

The liquid receiving member 104 is provided on the outer peripheral portion of the main body portion 101, specifically, on the outer peripheral portion 112 a of the second main body portion 112. The liquid receiving member 104 has a bowl shape protruding from the outer peripheral part 112 a of the second main body part 112, and the processing liquid passes over the peripheral wall part 207 by receiving the processing liquid scattered from the cleaning body 103 at the lower surface 141. Can be prevented (see FIG. 7). Since the liquid receiving member 104 has a circular shape in plan view, the dispersion of the processing liquid can be suppressed in all directions.

The liquid receiving member 104 is disposed above the mounting surface of the cleaning body 103, that is, the lower surface 112b of the second main body 112, and the lower surface 141 of the liquid receiving member 104 is lower than the lower surface 112b of the second main body 112. Is also disposed above. By arranging in this way, it is possible to prevent the liquid receiving member 104 from interfering with other members when the back brush 241 is moved toward the outer peripheral portion of the wafer W in the back surface cleaning process.

Specifically, as shown in FIG. 7, the lower surface 141 of the liquid receiving member 104 is disposed above the upper end of the gripping part 222 provided in the substrate holding part 202. Further, the lower surface 141 of the liquid receiving member 104 is disposed above the upper end of the recovery cup 203. By arranging in this way, it is possible to prevent the liquid receiving member 104 from interfering with the grip portion 222 and the recovery cup 203. Further, the lower surface 141 of the liquid receiving member 104 may be horizontal in a direction protruding from the outer peripheral portion 112a of the second main body 112, or may be inclined downwardly, at a height that does not contact the gripping portion 222 (see FIG. 5). Also good. When the lower surface 141 of the liquid receiving member 104 is inclined downward, the liquid can be further prevented from remaining on the lower surface 141 of the liquid receiving member 104. Furthermore, by making the lower surface 141 of the liquid receiving member 104 hydrophobic, it is possible to prevent the liquid from remaining on the lower surface 141 of the liquid receiving member 104. Further, by making the outer peripheral portion of the main body portion 101 hydrophobic, it is possible to prevent liquid from remaining on the outer peripheral portion of the main body portion 101.

When the process using the back brush 241 is performed in the back surface cleaning process, the peripheral wall part 207 is disposed at the first height position H1 where the upper end of the peripheral wall part 207 is highest. The liquid receiving member 104 has a diameter that prevents the processing liquid scattered from the cleaning body 103 from exceeding the peripheral wall portion 207 disposed at the first height position H1. As shown in FIG. 7, this diameter is determined based on at least the relationship between the angle with respect to the wafer W that can be taken by the processing liquid scattered from the cleaning body 103 and the first height position H1 of the peripheral wall portion 207. Note that the speed at which the scattered processing liquid can be taken and the position of the cleaning body 103 on the wafer W can also be related to the determination of the diameter. In this way, while preventing the processing liquid from being scattered to some extent using the peripheral wall portion 207, by receiving the processing liquid splashing beyond the peripheral wall portion 207 with the liquid receiving member 104, while suppressing the height of the peripheral wall portion 207, Spattering of the processing liquid can be suppressed.

Note that the bowl-shaped upper surface 142 of the liquid receiving member 104 is inclined downward toward the outside. For this reason, it is possible to prevent the processing liquid from remaining on the upper surface 142. Note that the shape of the upper surface 142 does not need to have a constant inclination angle toward the outside as shown in FIG. 6, for example, a multi-stage inclination shape in which the inclination angle is increased stepwise on the way to the outside direction. Alternatively, it may be arcuate with the inclination angle gradually increasing toward the outside.

The peripheral wall portion 207 is changed in height position in at least three stages of a first height position H1, a second height position H2, and a third height position H3 in a series of substrate processing. The first height position H1 is a height position at which the peripheral wall portion 207 is disposed when processing using the back surface brush 241 is performed in the back surface cleaning processing. In the second height position H2, for example, the peripheral wall portion 207 is disposed when processing with less scattering of the processing liquid is performed as compared with the case where the back surface brush 241 is used, such as processing using only the second supply unit 206. And is set lower than the first height position H1. The third height position H3 is an initial position of the peripheral wall portion 207, and is set lower than the second height position H2, for example, at a height position similar to that of the recovery cup 203.

The third height position H3 is a height position that interferes with the back surface cleaning unit 204, the first supply unit 205, and the second supply unit 206, and the first height position H1 and the second height position H2 are: The height position does not interfere with the back surface cleaning unit 204, the first supply unit 205, and the second supply unit 206.

FIG. 8 is a schematic side sectional view of the back surface cleaning unit 204. As shown in FIG. 8, the arm 243 includes a first arm body 246 that extends in the horizontal direction and a second arm body 247 that is provided below the first arm body 246.

The first arm body 246 has a drive part 246a such as a motor for rotating the spindle 242, and a first internal space R1 that accommodates a part of the spindle 242. The drive unit 246a and the spindle 242 are connected by, for example, pulleys 246b and 246c and a transmission belt 246d. In addition, devices (not shown) such as a bearing portion 246e and a load cell that rotatably support the spindle 242 are disposed in the first internal space R1.

In the lower part of the first arm body 246, an insertion port 246f for inserting the spindle 242 is formed. Therefore, the first internal space R1 is not a complete sealed space.

The second arm body 247 communicates the first internal space R1 and the outside through the insertion port 246f of the first arm body 246, and a part of the spindle 242 exposed from the first internal space R1 through the insertion port 246f. Has a second internal space R2.

The second internal space R2 has an upper internal space R2a that communicates with the insertion port 246f of the first arm body 246, a lower internal space R2b that communicates with the upper internal space R2a at the upper portion, and communicates with the outside at the lower portion. The upper internal space R2a and the lower internal space R2b are loosely formed by an annular first protrusion 247a protruding toward the second internal space R2 from the inner peripheral surface of the second arm body 247 forming the second internal space R2. It is delimited.

The spindle 242 has annular second projecting

portions

242a and 242b that project radially outward from the outer peripheral surface at a portion disposed in the second internal space R2. The second protrusion 242a is disposed above the first protrusion 247a. Moreover, the 2nd protrusion part 242b is arrange | positioned under the 1st protrusion part 247a.

As described above, in the back surface cleaning unit 204, the first internal portion R 247 a provided in the second internal space R 2 of the second arm body 247 and the second

internal protrusions

242 a and 242 b provided on the spindle 242 serve as the second internal A so-called labyrinth structure is formed in the space R2. Thereby, the back surface cleaning unit 204 can prevent the atmosphere such as the first chemical solution or the second chemical solution from entering the first internal space R1 and degrading the driving unit 246a and the like in the first internal space R1. it can.

Furthermore, the arm 243 includes a gas supply unit 247b. The gas supply unit 247b is configured by a passage hole, piping, or the like formed in the first arm body 246 or the second arm body 247, and one end thereof is connected to the lower internal space R2b of the second internal space R2. The other end is connected to a gas supply source 245d via a valve 244d, a flow rate regulator (not shown), or the like. The gas supply unit 247b supplies an inert gas such as N 2 gas supplied from the gas supply source 245d to the lower internal space R2b. Thereby, since the invasion of the external atmosphere into the lower internal space R2b is hindered by the inert gas, the atmosphere such as the first chemical liquid or the second chemical liquid is more reliably prevented from entering the first internal space R1. be able to.

Further, the arm 243 includes an intake portion 247c. The intake portion 247c is configured by a passage hole, piping, or the like formed in the first arm body 246 or the second arm body 247, and one end thereof is connected to the upper internal space R2a of the second internal space R2, and the like. The end is connected to the intake mechanism 247d. The intake portion 247c takes in the atmosphere in the upper internal space R2a using the intake mechanism 247d. Thereby, it is possible to prevent dust generated from the drive unit 246a and the bearing unit 246e accommodated in the first internal space R1 from flowing out to contaminate the wafer W and the like.

The arm 243 includes a discharge unit 247e. The discharge part 247e is configured by a passage hole, piping, or the like formed in the first arm body 246 or the second arm body 247, and one end thereof is exposed on the lower surface of the second arm body 247. The other end of the discharge unit 247e is connected to the first chemical supply source 245a via a valve 244a, a flow rate regulator (not shown), and the like, and via the valve 244b, a flow rate regulator (not shown), etc. It is connected to the second chemical liquid supply source 245b and connected to the rinse liquid supply source 245c via a valve 244c, a flow rate regulator (not shown), or the like.

The discharge unit 247e uses the first chemical liquid supplied from the first chemical liquid supply source 245a, the second chemical liquid supplied from the second chemical liquid supply source 245b, or pure water supplied from the rinse liquid supply source 245c to the back brush 241. In order to supply to the hollow portion 113 formed in the main body portion 101, it is discharged vertically downward from the lower surface of the second arm body 247.

Here, since the second internal space R2 is formed in the second arm body 247 as described above, it is difficult to place the discharge portion 247e close to the center of the second arm body 247. For this reason, the discharge part 247e is disposed at a position farther from the spindle 242 than the hollow part 113 of the back brush 241. Specifically, the discharge part 247e is disposed at a position farther from the spindle 242 than the outer peripheral part of the main body part 101 of the back brush 241. In this case, the processing liquid cannot be supplied to the hollow portion 113 simply by discharging the processing liquid from the discharge unit 247e.

Therefore, the back surface cleaning unit 204 includes a guide member 248. The guide member 248 is disposed between the discharge unit 247e and the back surface brush 241, and once receives the processing liquid discharged from the discharge unit 247e and guides it to the hollow portion 113 of the back surface brush 241.

Specifically, the guide member 248 has a circular tray shape in plan view, and is disposed below the second arm body 247 and separated from the second arm body 247. Further, the guide member 248 has an insertion port 248e at the center, and the spindle 242 is inserted into the insertion port 248e, and the step portion formed on the spindle 242 and the connecting portion 102 of the back surface brush 241 move in the vertical direction. It is fixed by being pinched from and rotated together with the spindle 242.

Here, the configuration of the guide member 248 will be specifically described with reference to FIG. FIG. 9 is a schematic perspective view of the guide member 248.

As shown in FIG. 9, the guide member 248 includes a receiving surface 248a and a discharge portion 248b. The receiving surface 248a is an inclined surface that is disposed below the discharge unit 247e and is inclined downward toward the spindle 242 from a position farther from the spindle 242 than the discharge unit 247e.

The discharge part 248b is provided in a region of the receiving surface 248a located immediately above the hollow part 113 of the back brush 241 and discharges the processing liquid received on the receiving surface 248a toward the hollow part 113. Specifically, the discharge part 248b includes a plurality of discharge ports 248b1 that are arranged circumferentially with respect to the receiving surface 248a. Thereby, compared with the case where a single discharge port is provided, for example, the treatment liquid received on the receiving surface 248a can be evenly dropped toward the hollow portion 113.

Further, the guide member 248 includes a circumferential first wall portion 248c erected upward from the outer peripheral portion of the receiving surface 248a. Thereby, it is possible to prevent the processing liquid received on the receiving surface 248a from dropping from the outer peripheral portion of the receiving surface 248a. Further, the guide member 248 includes a circumferential second wall portion 248d that is erected upward between the discharge portion 248b and the spindle 242. Accordingly, it is possible to prevent the processing liquid received by the receiving surface 248a from entering the insertion hole 121 of the connecting portion 102 along the spindle 242. In addition, it is possible to prevent the spindle 242 and the connection unit 102 from being deteriorated by the processing liquid.

Next, the configuration of the hollow portion 113 of the back brush 241 will be described with reference to FIGS. 8 and 10. FIG. 10 is a schematic perspective view of the back brush 241.

As shown in FIG. 8, the main body portion 101 of the back brush 241 includes a hollow portion 113 that is open at both upper and lower ends. An upper opening 113 a in the hollow portion 113 is provided in the first main body 111. The inner peripheral surface of the upper opening 113 a is provided at a position farther from the spindle 242 than the discharge portion 248 b of the guide member 248.

The lower opening 113 b in the hollow portion 113 is provided in the second main body portion 112. The lower opening 113b has a smaller diameter than the upper opening 113a. Specifically, the inner peripheral surface of the lower opening 113 b is provided at a position closer to the spindle 242 than the discharge portion 248 b of the guide member 248. Therefore, the processing liquid discharged from the discharge portion 248b of the guide member 248 enters the hollow portion 113 from the upper opening 113a, is collected near the spindle 242 side, and is discharged toward the wafer W from the lower opening 113b. It will be.

As shown in FIG. 10, a plurality of openings 113 c are provided in the middle of the hollow portion 113. The plurality of openings 113 c are provided in the first main body 111. In addition, a connection portion 113d between the first main body portion 111 and the connection portion 102 is provided between the openings 113c.

<Configuration of back brush housing>
Next, the structure of the accommodating part 208a of the back surface brush 241 will be described with reference to FIG. FIG. 11 is a schematic side view of the accommodating portion 208a.

As shown in FIG. 11, a brush cleaning unit 282 that cleans the back brush 241 disposed at the retracted position is provided on the bottom surface 281 of the accommodating unit 208 a that is the retracted position of the back brush 241. The brush cleaning unit 282 has a discharge port that discharges the cleaning liquid vertically upward, and is connected to the cleaning liquid supply source 284 via a valve 283, a flow rate regulator (not shown), and the like. The brush cleaning unit 282 discharges the cleaning liquid supplied from the cleaning liquid supply source 284 (here, pure water) vertically upward from the discharge port on the bottom surface 281 of the storage unit 208a toward the back brush 241. Then, the back brush 241 is cleaned using a cleaning liquid.

The discharge port of the brush cleaning unit 282 is disposed vertically below a region including the outer peripheral portion of the cleaning body 103 and the base end portion of the liquid receiving member 104 disposed at the retracted position. Supply some pure water. As a result, not only the cleaning body 103 but also the liquid receiving member 104 can be cleaned.

Further, during the brush cleaning process, the back surface cleaning unit 204 discharges pure water from the hollow portion 113 of the back surface brush 241. Thereby, not only the outer side of the cleaning body 103 but also the inner side can be cleaned.

In addition, the bottom surface 281 of the storage unit 208a is provided with a discharge unit 285 for discharging pure water discharged from the brush cleaning unit 282 and the hollow portion 113 in the brush cleaning process. The bottom surface 281 of the storage unit 208a is inclined downward toward the discharge unit 285.

<Processing procedure for back surface cleaning>
Next, a specific processing procedure of the back surface cleaning process executed in the second processing unit 28 will be described with reference to FIG. FIG. 12 is a flowchart showing the processing procedure of the back surface cleaning processing. Each processing procedure illustrated in FIG. 12 is executed by the control unit 51 controlling the substrate holding unit 202, the back surface cleaning unit 204, the first supply unit 205, the second supply unit 206, and the like of the second processing unit 28. The

As shown in FIG. 12, in the second processing unit 28, after the wafer W carried into the chamber 201 is held by the substrate holding unit 202, the first chemical processing is performed (step S101). In the first chemical treatment, first, the nozzle arm 252 is swung using the swivel lift mechanism 253 of the first supply unit 205 to position the nozzle 251 above the wafer W, and then the swivel lift mechanism 244 of the back surface cleaning unit 204. Is used to rotate the arm 243 so that the back brush 241 is positioned above the wafer W. Then, the surrounding wall part 207 is raised using the raising / lowering mechanism 271, and the height position of the surrounding wall part 207 is changed from the 3rd height position H3 (refer FIG. 7) to the 1st height position H1.

Subsequently, the wafer W is rotated using the driving unit 224 of the substrate holding unit 202, and the back surface brush 241 is rotated using the driving unit 246a of the back surface cleaning unit 204. Further, SC-1 as the first chemical solution is supplied from the nozzle 251 of the first supply unit 205 to the wafer W, and SC-1 is also supplied from the hollow part 113 of the back brush 241 to the wafer W. Then, the back surface brush 241 is lowered using the turning lift mechanism 244 of the back surface cleaning unit 204 to press the cleaning body 103 against the wafer W, and then the back surface brush 241 and the nozzle 251 are directed from the center of the wafer W to the outer periphery. To move. As a result, the particles are removed from the wafer W by the physical cleaning power by the cleaning body 103 and the chemical cleaning power by the SC-1.

Here, the positional relationship between the back brush 241 and the first supply unit 205 in the first chemical treatment will be specifically described with reference to FIG. FIG. 13 is a diagram illustrating a positional relationship between the back brush 241 and the first supply unit 205.

When the processing liquid is discharged to the wafer W from the outside of the back surface brush 241, the supply position of the processing liquid to the wafer W is preferably as close as possible to the back surface brush 241. This is because, as the processing liquid supply position is closer to the back surface brush 241, it becomes easier to form a liquid film of the processing liquid around the back surface brush 241.

However, if the nozzle 251 is too close to the back surface brush 241, the first supply unit 205 and the back surface cleaning unit 204 may come into contact with each other.

Therefore, as shown in FIG. 13, the nozzle 251 of the first supply unit 205 obliquely discharges SC-1 from the outside of the back brush 241 toward the position on the wafer W in front of the back brush 241. In this way, SC-1 is discharged obliquely, so that a liquid film of SC-1 is formed around the back surface brush 241 while avoiding a collision between the first supply unit 205 and the back surface cleaning unit 204. can do. The “position on the wafer W before the back brush 241” is a position on the wafer W at which the SC-1 liquid film formed on the wafer W can reach the back brush 241.

When the processing liquid is discharged obliquely, the rebound after the processing liquid contacts the wafer W may be larger than when the processing liquid is discharged in the vertical direction. When the rebound of the processing liquid becomes large, the rebounding processing liquid may scatter over, for example, the peripheral wall portion 207 (see FIG. 5).

Therefore, the nozzle 251 of the first supply unit 205 is located on the wafer W from the outside of the back brush 241 and on the front side of the back brush 241, and SC-1 that has bounced back on the wafer W moves to the liquid receiving member 104. SC-1 is discharged obliquely toward the position received by the lower surface 141. In other words, the inclination angle of the nozzle 251 and the height position and horizontal position on the wafer W are such that the SC-1 bounced on the wafer W can be received by the lower surface 141 of the liquid receiving member 104. And set to horizontal position.

Thereby, since SC-1 bounced on the wafer W can be received by the lower surface 141 of the liquid receiving member 104, scattering of SC-1 can be suppressed. Further, by suppressing the scattering of SC-1, it is possible to suppress the SC-1 that has bounced on the wafer W from adhering to the main body portion 101, the connection portion 102, and the like of the back brush 241.

The control unit 51 controls the swivel lifting mechanism 244 of the back surface cleaning unit 204 and the swivel lifting mechanism 253 of the first supply unit 205 to maintain the positional relationship between the back brush 241 and the nozzle 251 described above and the back brush 241 and The nozzle 251 is moved from the center of the wafer W toward the outer periphery. Thus, the entire surface of the wafer W can be processed while suppressing the scattering of SC-1.

When the back brush 241 reaches the outer periphery of the wafer W, the supply of SC-1 from the nozzle 251 and the hollow portion 113 is stopped, the back brush 241 is raised, and the rotation of the back brush 241 is stopped. Further, the back brush 241 and the nozzle 251 are moved to the center of the wafer W.

Subsequently, in the second processing unit 28, the first rinsing process is performed (step S102). In the first rinsing process, the processing liquid discharged to the wafer W is switched from the first chemical liquid to the pure water that is the rinsing liquid, and the back surface cleaning unit 204 and the first supply unit 205 are operated in the same manner as the first chemical liquid processing described above. . As a result, the SC-1 on the wafer W is washed away with pure water.

The positional relationship between the back surface brush 241 and the nozzle 251 in the first rinsing process is the same as the positional relationship between the back surface brush 241 and the nozzle 251 in the first chemical liquid process described above. That is, the nozzle 251 of the first supply unit 205 is located on the wafer W from the outside of the back brush 241 and on the front side of the back brush 241, and the pure water bounced on the wafer W is on the bottom surface of the liquid receiving member 104. The pure water is discharged obliquely toward the position received by 141.

According to the first rinsing process, the pure water bounced on the wafer W is supplied to the lower surface 141 of the liquid receiving member 104, whereby the SC-1 remaining on the lower surface 141 of the liquid receiving member 104 can be washed away. Moreover, according to the 1st rinse process, the outer peripheral part of the washing | cleaning body 103 can be wash | cleaned with a pure water.

Note that after the first rinsing process, the cleaning body 103 may be cleaned using pure water discharged from the nozzle 251. At this time, the control unit 51 may adjust the position of the nozzle 251 so that the pure water discharged from the nozzle 251 is directly supplied to the cleaning body 103. Thereby, the cleaning effect can be enhanced.

When the back brush 241 reaches the outer periphery of the wafer W, the supply of pure water from the nozzle 251 and the hollow portion 113 is stopped, the back brush 241 is raised, and the rotation of the back brush 241 is stopped. Thereafter, the peripheral wall 207 is displaced from the third height position H3 to the second height position H2, and the back brush 241 and the first supply unit 205 are retracted from the wafer W.

Subsequently, in the second processing unit 28, a second chemical liquid process is performed (step S103). In the second chemical treatment, first, the nozzle 261 of the second supply unit 206 is disposed on the wafer W, and then the back surface brush 241 is disposed on the wafer W. Thereafter, the peripheral wall portion 207 is moved from the second height position H2. Displace to the third height position H3.

Subsequently, the back brush 241 is rotated to supply DHF as the second chemical solution from the nozzle 261 of the second supply unit 206 to the wafer W, and DHF is also applied to the wafer W from the hollow portion 113 of the back brush 241. Supply. Then, after the back surface brush 241 is lowered and the cleaning body 103 is pressed against the wafer W, the back surface brush 241 and the nozzle 261 are moved from the center of the wafer W toward the outer periphery. Thereby, the particles are removed from the wafer W by the physical cleaning force by the cleaning body 103 and the chemical cleaning force by DHF.

The positional relationship between the back brush 241 and the nozzle 261 in the second chemical treatment is the same as the positional relationship between the back brush 241 and the nozzle 251 in the first chemical treatment described above. That is, the nozzle 261 of the second supply unit 206 is located on the wafer W from the outside of the back brush 241 and on the front side of the back brush 241, and DHF bounced on the wafer W is received by the liquid receiving member 104. Pure water is discharged obliquely toward the position. Further, the control unit 51 moves the back surface brush 241 and the nozzle 261 from the center portion of the wafer W toward the outer peripheral portion while maintaining the positional relationship between the back surface brush 241 and the nozzle 261 described above.

When the back surface brush 241 reaches the outer peripheral portion of the wafer W, the supply of DHF from the nozzle 261 and the hollow portion 113 is stopped, the back surface brush 241 is raised, and the rotation of the back surface brush 241 is stopped. Thereafter, the peripheral wall portion 207 is displaced from the third height position H3 to the second height position H2, and the back surface brush 241 is retracted from the wafer W.

Subsequently, in the second processing unit 28, a second rinse process is performed (step S104). In the second rinsing process, pure water that is a rinsing liquid is supplied to the wafer W from the nozzle 261 of the second supply unit 206. Thereby, DHF on the wafer W is washed away with pure water. Thereafter, the supply of pure water from the nozzle 261 is stopped, and the second supply unit 206 is retracted from the wafer W.

The positional relationship between the back surface brush 241 and the nozzle 261 in the second rinsing process is the same as the positional relationship between the back surface brush 241 and the nozzle 261 in the second chemical liquid process described above.

Subsequently, in the second processing unit 28, a brush cleaning process is performed (step S105). In the brush cleaning process, the back surface brush 241 is rotated in the accommodating portion 208a which is the retracted position, and pure water is supplied from the bottom surface 281 to the region including the outer peripheral portion of the cleaning body 103 and the base end portion of the liquid receiving member 104. To do. Further, pure water is discharged from the hollow portion 113 of the rotating back surface brush 241. Thereby, the outer side and the inner side of the cleaning body 103 are cleaned, and the liquid receiving member 104 is cleaned.

Subsequently, in the second processing unit 28, a drying process is performed (step S106). In the drying process, the wafer W is rotated at a faster rotation speed than that in the second rinse process. Thereby, the pure water on the wafer W is removed, and the wafer W is dried. Thereafter, the rotation of the wafer W is stopped, and the peripheral wall portion 207 is displaced from the second height position H2 to the first height position H1.

The brush cleaning process may be performed in parallel with the second rinse process or the drying process. Further, the brush cleaning process may be performed in parallel with the unloading process of the processed wafer W and the unloading process of the unprocessed wafer W.

As described above, the back surface cleaning unit 204 discharges the processing liquid not only from the outside of the back brush 241 but also from the inside of the back brush 241 in the first chemical liquid process, the first rinse process, and the second chemical liquid process. Therefore, particles removed from the wafer W can be made difficult to remain inside the cleaning body 103.

Further, the discharge unit 247e (see FIG. 8) of the back surface cleaning unit 204 discharges the first chemical liquid that is the first processing liquid among the plurality of types of processing liquids, and then discharges pure water that is the second processing liquid. Thereafter, the second chemical liquid that is the third processing liquid is discharged. In this way, in the first rinsing process after the first chemical liquid process and before the second chemical liquid process, the SC-1 is discharged from the cleaning body 103 by discharging pure water from the hollow portion 113 of the back surface brush 241, that is, from the inside of the cleaning body 103. Can be removed more reliably. Therefore, it is possible to prevent the salt from being generated by the reaction of DHF and SC-1 in the second chemical treatment.

Incidentally, the second processing unit 28 performs, for example, initialization processing for returning the back surface cleaning unit 204, the first supply unit 205, and the second supply unit 206 to their respective retracted positions after power-on. In such initialization processing, the second processing unit 28 simultaneously causes the arm 243 of the back surface cleaning unit 204, the nozzle arm 252 of the first supply unit 205, and the nozzle arm 262 of the second supply unit 206 to simultaneously move toward the retracted position at the same speed. Turn.

The arm 243 of the back surface cleaning unit 204 rotates the back surface brush 241 along a trajectory that intersects with the trajectory of the nozzle arm 252 of the first supply unit 205 and the trajectory of the nozzle arm 262 of the second supply unit 206. Assuming that the arm 243 and the

nozzle arms

252 and 262 are moved at the same speed at the same time, the arm 243 or the like may be displaced from the normal position by manually moving the arm 243 or the like when the power is not supplied. Even if they are, they can be returned to the retracted position, which is the initial position, without interfering with each other.

As described above, the second processing unit 28 (an example of the substrate cleaning apparatus) according to this embodiment includes the substrate holding unit 202, the back surface brush 241 (an example of the brush), the arm 243, and the first supply unit 205. And a second supply unit 206 (an example of a supply unit). The substrate holding unit 202 rotatably holds the wafer W (an example of a substrate). The arm 243 supports the back brush 241 via the spindle 242 so as to be rotatable. The first supply unit 205 and the second supply unit 206 supply the processing liquid to the wafer W. The back brush 241 includes the main body 101, the cleaning body 103, and the liquid receiving member 104. The main body 101 is connected to the spindle 242. The cleaning body 103 is provided below the main body 101 and is pressed against the wafer W. The liquid receiving member 104 is provided on the outer peripheral portion of the main body 101 and receives the processing liquid scattered from the cleaning body 103.

Therefore, the second processing unit 28 according to the present embodiment can suppress scattering of the processing liquid.

Further, the second processing unit 28 (an example of a substrate cleaning apparatus) according to the present embodiment includes a substrate holding unit 202, a back surface brush 241 (an example of a brush), an arm 243, a discharge unit 247e, and a guide member 248. Is provided. The substrate holding unit 202 rotatably holds the wafer W (an example of a substrate). The back brush 241 is a hollow brush that is open at both upper and lower ends. The arm 243 supports the back brush 241 via the spindle 242 so as to be rotatable. The discharge unit 247e is provided on the arm 243 and can discharge by switching a plurality of types of processing liquids. The guide member 248 is disposed between the discharge portion 247e and the back brush 241 and temporarily receives the processing liquid discharged from the discharge portion 247e and guides it to the hollow portion 113 of the brush.

Therefore, according to the second processing unit 28 according to the present embodiment, even when a plurality of different types of cleaning liquids are supplied to the back surface brush 241, good cleaning processing can be performed. Further, it is possible to make it difficult for particles or the like removed from the wafer W to remain in the cleaning body 103 of the back surface cleaning unit 204.

In the above-described embodiment, an example in which the guide member 248 rotates integrally with the back brush 241 has been described. However, the guide member 248 may be integrated with the second arm body 247 so as not to rotate.

In the above-described embodiment, an example in which the liquid receiving member 104 is provided in the second main body 112 of the main body 101 has been described. However, the liquid receiving member 104 may be provided in the first main body 111. .

In the above-described embodiment, the back brush for cleaning the back surface of the substrate has been described as an example. However, the present invention is not limited to this, and the same brush is used for cleaning the front surface and the peripheral edge of the substrate. A configuration may be applied.

In the above-described embodiment, the inert gas is supplied to the lower internal space R2b of the second internal space R2 (see FIG. 8) and the atmosphere in the upper internal space R2a is sucked. The atmosphere of the lower internal space R2b may be sucked in while supplying an inert gas to the internal space R2a. Further, the back surface cleaning unit 204 does not necessarily need to include the intake unit 247c.

In the above-described embodiment, an example in which both the first supply unit 205 and the second supply unit 206 are configured to be able to supply pure water that is a rinsing liquid has been described. Only one of the second supply units 206 may be configured to be able to supply pure water that is a rinse liquid. The back surface cleaning unit 204 may further include a third supply unit that supplies a rinsing liquid.

(Other embodiments)
Next, the configuration of the first processing unit 18 will be described with reference to FIG. FIG. 14 is a schematic side view of the first processing unit 18.

As shown in FIG. 14, the first chamber 301 accommodates a first holding unit 302, a first recovery cup 303, a bevel cleaning unit 304, and a first discharge unit 305. An FFU 311 that forms a downflow in the first chamber 301 is provided on the ceiling of the first chamber 301.

The first holding unit 302 includes an adsorption holding unit 321, a support member 322, and a driving unit 323. The suction holding unit 321 is, for example, a vacuum chuck, and holds the wafer W by suction. The column member 322 is provided below the suction holding unit 321 and is rotatably supported by the first chamber 301 and the first recovery cup 303 via a bearing (not shown). The drive unit 323 is provided below the support member 322 and rotates the support member 322 around the vertical axis.

The first recovery cup 303 is disposed so as to surround the first holding unit 302. At the bottom of the first recovery cup 303, a liquid discharge port 331 for discharging the chemical liquid discharged from the first discharge unit 305 to the outside of the first chamber 301, and for exhausting the atmosphere in the first chamber 301 An exhaust port 332 is formed.

The bevel cleaning unit 304 extends in the horizontal direction (here, the Y-axis direction) with the bevel brush 341, and supports the bevel brush 341 from above via the first shaft 342, and the arm 345 in the horizontal direction (here Then, a moving mechanism (not shown) for moving in the X-axis direction is provided. This moving mechanism can move the arm 345 also in the vertical direction (Z-axis direction).

In this embodiment, the arm 345 can switch between the operation of supporting the bevel brush 341 from above via the first shaft 342 and the operation of supporting the bevel brush 344 from above via the second shaft 343. FIG. 14 shows a state where the bevel brush 344 is removed and the bevel cleaning of the wafer W is performed using only the bevel brush 341. An operation of supporting both the bevel brush 341 and the bevel brush 344 and performing bevel cleaning of the wafer W with two brushes is also possible, but the description thereof is omitted in this embodiment.

The accommodating portion 308 accommodates the removed bevel brush 341 or the bevel brush 344. The arm 345 can move between the processing position of the wafer W and the storage unit 308 by moving in the horizontal direction (X-axis direction) and the vertical direction (Z-axis direction). The first discharge unit 305 is provided, for example, at the bottom of the first recovery cup 303, and for example, SC1 (ammonia / hydrogen peroxide / water mixture) via a valve 351, a flow rate regulator (not shown), or the like. Is connected to a chemical solution supply source 352.

The first processing unit 18 is configured as described above, and rotates the wafer W in a state where the back surface of the wafer W with the front surface facing upward is sucked and held by the suction holding unit 321. Then, the first processing unit 18 causes the bevel brush 341 of the bevel cleaning unit 304 to contact the peripheral part of the wafer W while discharging the chemical solution from the first discharge unit 305 toward the peripheral part of the back surface of the rotating wafer W. Thus, chemical cleaning with a chemical solution and physical cleaning with a bevel brush 341 are performed. The first processing unit 18 performs a rinsing process by supplying a rinsing liquid such as pure water from the first ejection unit 305 and a drying process of the wafer W by rotating the wafer W after the bevel cleaning process.

15A to 15C are schematic side views of the accommodating portion 308. FIG. As shown in FIG. 15C, the accommodating portion 308 is provided with a bevel brush 341 disposed at the retracted position and a brush cleaning portion 386 for cleaning the bevel brush 344, and includes a valve 384 and a flow rate regulator (not shown). Etc., and connected to the cleaning liquid supply source 383. The brush cleaning unit 386 discharges the cleaning liquid (here, pure water) supplied from the cleaning liquid supply source 383 toward the brush from above the storage unit 308. The bottom surface 381 of the storage unit 308 is provided with a discharge unit 385 for discharging pure water discharged from the brush cleaning unit 386 to the outside in the brush cleaning process.

During the brush cleaning, the holding unit 387 holds the brush horizontally. The holding portion 387 has a rotation drive mechanism (not shown) and rotates the bevel brush 344 while holding it. In this embodiment, it is rotated horizontally, but it may be held and rotated with an inclination. In this case, the cleaning liquid supplied from the brush cleaning unit 386 can be easily shaken off from the upper surface of the bevel brush 344 rather than being held horizontally, and the cleaning efficiency is improved.

FIG. 15A and FIG. 15B explain the operation until the storage unit 308 stores the bevel brush 344 before performing the cleaning operation of FIG. 15C. First, as shown in FIG. 15A, the arm 345 moves in the X-axis direction to above the accommodating portion 308 and then descends in the Z-axis direction. The holding portion 387 is movable, and in this state, the holding portion 387 is in the retracted position so that the bevel brush 344 can enter the housing portion 308. Thereafter, when the bevel brush 344 is lowered to a predetermined height, the holding portion 387 starts moving in the X-axis direction indicated by the arrow. Then, the position of the bevel brush 344 is fixed by moving the upper part of the bevel brush 344 from the lateral direction to a position where it is gripped. The shape of the holding unit 387 in plan view is not limited, but even if the brush cleaning unit 386 discharges the cleaning liquid as illustrated in FIG. 15C, an opening or a region that passes through the cleaning liquid without colliding and reaches the bevel brush 344 is secured. It is assumed that

As shown in FIG. 15B, when the bevel brush 344 is fixed in the accommodating portion 308, the arm 345 is raised. The attaching portion 348 of the second shaft 343 has a convex shape, and the bevel brush 344 is attached to the second shaft 343 by engaging with a not-shown recessed portion provided above the bevel brush 344. As illustrated, the bevel brush 344 can be removed from the second shaft 343 by raising the arm 345.

Since the arm 345 can move to the position of the wafer W after the bevel brush 344 is removed, the bevel cleaning process of the wafer W by the bevel brush 341 as shown in FIG. 14 while the bevel brush 344 is being cleaned as shown in FIG. 15C. Can be performed in parallel. Similarly, while the bevel brush 341 is being cleaned, the bevel cleaning process of the wafer W by the bevel brush 344 can be performed in parallel. Therefore, the downtime of the bevel cleaning process can be reduced as compared with a system in which one bevel brush is used and the brush is cleaned by the storage unit 308 each time it is contaminated, and the operation efficiency of the first processing unit 18 is improved. be able to.

In the embodiment described above, the processing liquid is supplied to the wafer W from both the inside and the outside of the back brush 241, that is, from the hollow portion 113 and the first supply unit 205 or the second supply unit 206 of the back brush 241. The example of was described. However, the present invention is not limited to this, and the processing liquid may be discharged only from the inside of the back surface brush 241, that is, from the hollow portion 113 of the back surface brush 241. In this case, the processing liquid scattered from the cleaning body 103 is received by the lower surface 141 of the liquid receiving member 104, whereby the processing liquid can be prevented from scattering beyond the peripheral wall portion 207. Further, the processing liquid may be supplied only from the outside of the back surface brush 241, that is, from the first supply unit 205 or the second supply unit 206. In this case, the processing liquid splashed from the cleaning body 103 is received by the lower surface 141 of the liquid receiving member 104, so that the processing liquid can be prevented from splashing over the peripheral wall portion 207, and splashed on the wafer W. It is possible to prevent the treated liquid from adhering to the main body portion 101, the connection portion 102, and the like of the back brush 241.

In the above-described embodiment, the arm 243 is swung by the swivel raising / lowering mechanism 244 (an example of the first moving mechanism). However, the first moving mechanism moves the arm 243 linearly along the rail, for example. It may be. Similarly, in the embodiment described above, the nozzle arm 252 is swung by the swivel raising / lowering mechanism 253 (an example of the second moving mechanism). However, the second moving mechanism moves the nozzle arm 252 linearly along the rail, for example. It may be moved. The same applies to the turning lift mechanism 263 (an example of the second moving mechanism) in which the nozzle arm 262 is turned.

Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W wafer 28 second processing unit 101 main body portion 102 connecting portion 103 cleaning body 104 liquid receiving member 111 first main body portion 112 second main body portion 113 hollow portion 202 substrate holding portion 203 recovery cup 204 back surface cleaning portion 205 first supply portion 206 Second supply section 207 Peripheral wall section 241 Back brush 242 Spindle 243 Arm 244 Rotation lifting mechanism

Claims

A substrate cleaning apparatus for cleaning a substrate using a brush,
A substrate holding unit for rotatably holding the substrate;
An arm that rotatably supports the brush via a spindle;
A supply unit for supplying a processing liquid to the substrate,
The brush
A main body connected to the spindle;
A cleaning body provided at a lower portion of the main body and pressed against the substrate;
A substrate cleaning apparatus, comprising: a liquid receiving member provided on an outer peripheral portion of the main body portion and protruding from the outer peripheral portion of the main body portion.
The liquid receiving member is
The substrate cleaning apparatus according to claim 1, wherein the substrate cleaning apparatus has a bowl shape whose upper surface is inclined.
The liquid receiving member is
The substrate cleaning apparatus according to claim 1, wherein the substrate cleaning apparatus is disposed above a mounting surface of the cleaning body in the main body.
The liquid receiving member is
The substrate cleaning apparatus according to claim 2, wherein the substrate cleaning apparatus is disposed above a mounting surface of the cleaning body in the main body.
The substrate holder is
A gripping portion for gripping the peripheral edge of the substrate;
4. The substrate cleaning apparatus according to claim 3, wherein a lower surface of the liquid receiving member is positioned above an upper end of the grip portion in a state where the cleaning body is pressed against the substrate.
The substrate holder is
A gripping portion for gripping the peripheral edge of the substrate;
5. The substrate cleaning apparatus according to claim 4, wherein a lower surface of the liquid receiving member is positioned above an upper end of the grip portion in a state where the cleaning body is pressed against the substrate.
A peripheral wall that surrounds the periphery of the substrate holder and receives a processing liquid scattered from the substrate holder;
The diameter of the liquid receiving member is
The substrate cleaning apparatus according to claim 1, wherein the substrate cleaning apparatus is determined based on at least a relationship between an angle of the processing liquid scattered from the cleaning body with respect to the substrate and a height of the peripheral wall portion.
A brush cleaning unit that is provided at a retracted position of the brush, has a discharge port that discharges a cleaning liquid vertically upward, and cleans the brush disposed at the retracted position using a cleaning liquid discharged from the discharge port With
2. The substrate according to claim 1, wherein the discharge port of the brush cleaning unit is disposed vertically below a region including an outer peripheral portion of the cleaning body and a base end portion of the liquid receiving member that are disposed at the retracted position. Cleaning device.
The arm is
A first internal space for accommodating a drive unit for rotating the spindle and a part of the spindle;
A second internal space that communicates the first internal space with the outside and covers a part of the spindle exposed from the first internal space;
The substrate cleaning apparatus according to claim 1, further comprising: a gas supply unit that supplies an inert gas to the second internal space.
The arm is
The substrate cleaning apparatus according to claim 9, further comprising: an intake portion that sucks the second internal space.
The intake section is
The substrate cleaning apparatus according to claim 10, which is provided at a position closer to the first internal space than the gas supply unit.
The substrate holder is
A gripping portion for gripping the peripheral edge of the substrate;
The lower surface of the liquid receiving member is disposed above the mounting surface of the cleaning body in the main body, and is positioned above the upper end of the gripping portion in a state where the cleaning body is pressed against the substrate. The substrate cleaning apparatus according to claim 11.
The supply unit
The processing liquid is ejected obliquely from the outside of the brush toward the position on the substrate before the brush and where the processing liquid bounced on the substrate is received by the liquid receiving member. The substrate cleaning apparatus according to claim 1, wherein:
The supply unit
A nozzle for discharging the treatment liquid;
A nozzle arm that supports the nozzle;
A first moving mechanism for moving the arm;
A second moving mechanism for moving the nozzle arm;
By controlling the first moving mechanism and the second moving mechanism, the supply unit is a position on the substrate in front of the brush from the outside of the brush and rebounds on the substrate. A control unit that moves the brush and the nozzle while maintaining a state in which the processing liquid is discharged obliquely toward the position where the processing liquid is received by the liquid receiving member. 14. The substrate cleaning apparatus according to 13.