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WO2016124135A1 - 一种单芯片具有校准线圈和/或重置线圈的高强度磁场x轴线性磁电阻传感器 - Google Patents

一种单芯片具有校准线圈和/或重置线圈的高强度磁场x轴线性磁电阻传感器 Download PDF

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Publication number
WO2016124135A1
WO2016124135A1 PCT/CN2016/073244 CN2016073244W WO2016124135A1 WO 2016124135 A1 WO2016124135 A1 WO 2016124135A1 CN 2016073244 W CN2016073244 W CN 2016073244W WO 2016124135 A1 WO2016124135 A1 WO 2016124135A1
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WIPO (PCT)
Prior art keywords
coil
magnetic field
sensing unit
calibration
reset
Prior art date
Application number
PCT/CN2016/073244
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English (en)
French (fr)
Inventor
迪克詹姆斯·G
周志敏
Original Assignee
江苏多维科技有限公司
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Application filed by 江苏多维科技有限公司 filed Critical 江苏多维科技有限公司
Priority to US15/549,098 priority Critical patent/US10379176B2/en
Priority to JP2017541004A priority patent/JP6965161B2/ja
Priority to EP16746130.0A priority patent/EP3255446B1/en
Publication of WO2016124135A1 publication Critical patent/WO2016124135A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/007—Environmental aspects, e.g. temperature variations, radiation, stray fields
    • G01R33/0076—Protection, e.g. with housings against stray fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0094—Sensor arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Definitions

  • the present invention relates to the field of magnetic sensors, and more particularly to a high-intensity magnetic field X-axis magnetic resistance sensor having a calibration coil/reset coil on a single chip.
  • the silicon magnetic sensor mainly includes a Hall magnetic sensor, an AMR magnetic sensor, and a GMR magnetic sensor.
  • the Hall magnetic sensor obtains different resistance values by depositing a semiconductor film such as indium antimonide on the substrate by the deflection of the path of the external magnetic field, which has the advantage that the Hall magnetoresistive sensor can measure a wide magnetic field.
  • the disadvantage is that the sensitivity of the magnetic field is low, and it is usually necessary to introduce a flux concentrator to amplify the external magnetic field.
  • the AMR magnetic sensor deposits a single-layer magnetic film on the substrate, and changes the magnetic moment direction of the magnetic film by the external magnetic field, thereby changing the resistance at both ends thereof, and the sensing unit and the electrode are prepared in a diagonal strip shape so that the current direction and the magnetic field are made.
  • the direction is at a certain angle, so that the direction of the magnetic field can be distinguished.
  • the advantage is that the sensor unit is simple and has only one film.
  • the disadvantage is that the sensor has a low magnetic field change rate and poor sensitivity.
  • the GMR multilayer thin film magnetic sensor is a magnetoresistive sensor formed by forming a nano-multilayer film structure by a magnetic film and a conductive film. By changing the magnetization direction of the magnetic film layer, the magnetic carrier is carried by the magnetic field when the carrier passes through the multilayer film. The sub-path changes to change the resistance, and the rate of change in magnetoresistance is further improved relative to the AMR sensor.
  • the TMR magnetic multilayer film sensor controls the magnetization direction of the free layer by an external magnetic field by introducing a reference magnetic layer, a pinning layer, a non-metal isolating layer, and a magnetic free layer, thereby changing two magnetic free layers.
  • the relative ratio of spin electrons causes the current flowing from the reference free layer to enter the magnetic free layer to change, resulting in a change in the resistance of the sensor.
  • the rate of change of magnetoresistance can reach 200%, which is much higher than Hall, AMR and GMR types. Magnetoresistive sensor.
  • Three-axis magnetoresistive sensors include X-axis magnetoresistive sensors, Y-axis magnetoresistive sensors, and Z. Axial magnetoresistive sensors, but so far these sensors
  • the device is mainly based on Hall, AMR or GMR.
  • the present invention proposes a high-intensity magnetic field X-axis magnetoresistive sensor with a calibration coil/reset coil on a single chip, which has excellent linear range and magnetic field sensitivity. It can completely replace the current Hall, AMR or GMR type X-axis magnetoresistive sensor.
  • the invention provides a high-intensity magnetic field X-axis magnetoresistive sensor with a calibration coil/reset coil on a single chip, and a calibration coil/reset coil is introduced on the chip, and the sensitive magnetoresistance is passed through an appropriate current in the calibration coil.
  • the position of the string of cells and the reference magnetoresistive element string respectively generate a calibration magnetic field in the X direction, and realizes precise adjustment of the magnitude of the calibration magnetic field by adjustment of the calibration current. Since the calibration coil is located on the X-axis sensor chip, only measurement is required Measurements can be made by means of a probe that can apply a current, thereby improving the efficiency of the measurement and ensuring the accuracy of the measurement.
  • the invention provides a single-chip high-intensity magnetic field X-axis magnetoresistive sensor with a calibration coil/reset coil, which comprises a high-intensity magnetic field single-chip reference bridge X-axis magnetoresistive sensor, a calibration coil and/or Or reset the coil;
  • the high-intensity magnetic field single-chip reference bridge X-axis magnetoresistive sensor comprises a reference magnetoresistive sensing unit string and a sensitive magnetoresistive sensing unit string staggered on a substrate, and a long strip soft magnetic flux guide,
  • the soft magnetic flux guide includes a shield and an attenuator, and the reference magnetoresistive sensing unit string and the sensitive magnetoresistive sensing unit string are respectively located at a Y-axis center line position of the shield and the attenuator surface,
  • the reference magnetoresistive sensing unit string and the sensitive magnetoresistive sensing unit are electrically connected in a reference bridge structure, the sensitive direction is the X-axis direction, and the reference magnetoresistive sensing unit string and the sensitive magnetoresistive sensing unit string both include Magnetoresistive unit;
  • the calibration coil is a planar coil, including parallel and serial And a reference straight wire and a sensitive straight wire respectively corresponding to the reference magnetoresistive sensing unit string and the sensitive magnetoresist
  • the reset coil includes a plurality of reset straight wires perpendicular to the series of the sensitive magnetoresistive sensing unit strings and the reference magnetoresistive sensing unit strings, and the same is generated perpendicular to the sensitive direction at all of the magnetoresistive sensing unit strings Reset the magnetic field;
  • the calibration coil passes a calibration current, and an X-direction sensitive calibration magnetic field and a reference calibration magnetic field are respectively generated at the sensitive magnetoresistive sensing unit string and the reference magnetoresistive sensing unit string, by measuring the X-axis magnetic field An output signal of the resistance sensor, thereby implementing a calibration function; when resetting, a resetting magnetic field is generated in the reset coil by generating a reset magnetic field in the Y direction at each of the magnetoresistive sensing units, thereby realizing a magnetoresistance The magnetic state of the sensing unit is restored.
  • the sensitive straight wire of the calibration coil is elongated, having a width Lx1 that is symmetrical with respect to a Y-axis centerline of the attenuator; each of the reference reference wires of the calibration coil includes two sub-straight wires connected in parallel The sub-straight wire is elongated and has a width of Lx2.
  • the two sub-straight wires are symmetrically distributed on both sides of the reference magnetoresistive sensing unit string, and Lx2 is smaller than Lx1, the reference straight wire and the Sensitive straight wires are connected in series.
  • the sensitive straight wire of the calibration coil is elongated and has a width Lx1 which is symmetrical with respect to a Y-axis center line of the attenuator;
  • the reference straight wire of the calibration coil is elongated and has a width of Lx2 It is symmetrical with respect to the Y-axis centerline of the shield, and Lx1 is smaller than Lx2, and the reference straight wire and the sensitive straight wire are connected in series.
  • both the reference straight wire and the sensitive straight wire of the calibration coil are located at a gap between the adjacent shield and the attenuator, wherein the reference straight wire is located on a side close to the shield, The sensitive straight wire is located on a side close to the attenuator, and the sensitive straight wire and the reference straight wire are elongated, and the widths are Lx1 and Lx2, respectively, wherein Lx1 is smaller than Lx2, and the reference straight wire and the The sensitive straight wires are connected in series.
  • a ratio of a magnetic field generated by the calibration coil in a sensitive direction at the string of the sensitive magnetoresistive sensing unit and the reference magnetoresistive sensing unit string approaches or exceeds the X external magnetic field in the sensitive magnetoresistive sensing unit string And a ratio of magnetic fields in a sensitive direction at the reference magnetoresistive sensing unit string.
  • the calibration coil is located above the substrate, below the magnetoresistive sensing unit, or between the magnetoresistive sensing unit and the soft magnetic flux director, or above the soft magnetic flux director.
  • the calibration coil is located above the substrate, under the magnetoresistive sensing unit, or between the magnetoresistive sensing unit and the soft magnetic flux director, or at the magnetoresistive resistor Above the sensing unit and at the gap between the shield of the soft magnetic flux director and the attenuator.
  • the reset coil is a planar reset coil located directly above or directly below the magnetoresistive sensing unit string arranged in the X direction of the magnetoresistive sensing unit array.
  • the reset coil is a three-dimensional reset coil, comprising a top-level straight wire and a bottom-layer straight wire perpendicular to a center line of the Y-axis, wherein the top-layer straight wire and the bottom-straight wire are connected in series to form a three-dimensional coil, and the three-dimensional coil is wound around a soft magnetic flux guide and the magnetoresistive sensing unit, wherein the top straight wire and the bottom straight wire are respectively located on surfaces of the soft magnetic flux guide and the magnetoresistive sensing unit, and the top straight wire and the bottom straight wire are in the Each of the surfaces has the same arrangement interval.
  • the planar reset coil may be located above the substrate, under the magnetoresistive sensing unit, or between the magnetoresistive sensing unit and the soft magnetic flux director, or above the soft magnetic flux director.
  • the reset coil and the calibration coil are high conductivity materials such as Cu, Au or Ag.
  • the reset coil and/or the calibration coil are isolated from the high-intensity magnetic field single-chip reference bridge X-axis magnetoresistive sensor by an insulating material of SiO 2 , Al 2 O 3 , Si 3 N 4 , polyimide or photoresist.
  • the calibration coil includes a positive port and a negative port, and when the two ports pass current, the calibration magnetic field amplitude generated therein is within a linear operating region of the magnetoresistive sensing unit.
  • the calibration current can be set to a current value, or a plurality of current values.
  • the reset coil includes two ports, and when the two ports pass current, the generated reset magnetic field is higher than the saturation magnetic field value of the magnetoresistive sensing unit.
  • the reset current can be a pulse current or a direct current.
  • Figure 1 shows the structure of a high-intensity magnetic field single-chip reference bridge X-axis magnetoresistive sensor.
  • FIG. 2 is a structural diagram of a high-intensity magnetic field single-chip reference bridge X-axis magnetoresistive sensor.
  • FIG. 3 is a cross-sectional structural view of a high-intensity magnetic field single-chip reference bridge X-axis magnetoresistive sensor.
  • FIG. 4 is a structural diagram of a high-intensity magnetic field X-axis magnetoresistive sensor including a type-plane calibration coil.
  • Figure 5 is a cross-sectional view of a high-intensity magnetic field X-axis magnetoresistive sensor including a type-plane calibration coil.
  • FIG. 6 is a cross-sectional view 2 of a high-intensity magnetic field X-axis magnetoresistive sensor including a type-plane calibration coil.
  • FIG. 7 is a cross-sectional view 3 of a high-intensity magnetic field X-axis magnetoresistive sensor including a type-plane calibration coil.
  • Figure 8 is a magnetic field distribution diagram of a type-plane calibration coil on a high-intensity magnetic field X-axis magnetoresistance sensing.
  • Figure 9 is a diagram showing the X-direction magnetic field distribution of a type-plane calibration coil in a high-intensity magnetic field X-axis magnetoresistance sensing at a position of a magnetoresistive sensing unit.
  • Figure 10 is a magnetic field distribution diagram of a type-plane calibration coil on a high-intensity magnetic field X-axis magnetoresistance sensing.
  • Figure 11 is a diagram showing the X-direction magnetic field distribution of a type-plane calibration coil in a high-intensity magnetic field X-axis magnetoresistance sensing at a position of a magnetoresistive sensing unit.
  • Figure 12 is a magnetic field distribution diagram of a type-plane calibration coil on a high-intensity magnetic field X-axis magnetoresistance sensing.
  • Figure 13 is a three-dimensional magnetic field distribution diagram of a type-plane calibration coil in a high-intensity magnetic field X-axis magnetoresistance sensing at a magnetoresistive sensing unit position.
  • Figure 14 is a structural diagram of a high-intensity magnetic field X-axis magnetoresistive sensor including a type II planar calibration coil.
  • Figure 15 is a cross-sectional view of a high-intensity magnetic field X-axis magnetoresistive sensor including a type II planar calibration coil.
  • Figure 16 is a magnetic field distribution diagram of a type II planar calibration coil on a high-intensity magnetic field X-axis magnetoresistance sensing.
  • Figure 17 is a type II planar calibration coil on a high-intensity magnetic field X-axis magnetoresistance sensing magnetic field Layout II.
  • Figure 18 is a diagram showing the X-direction magnetic field distribution of the type II planar calibration coil at the position of the magnetoresistive sensing unit in the high-intensity magnetic field X-axis magnetoresistance sensing.
  • Figure 19 is a structural diagram of a high-intensity magnetic field X-axis magnetoresistive sensor including a type three planar calibration coil.
  • Figure 20 is a cross-sectional view of a high-intensity magnetic field X-axis magnetoresistive sensor including a type three planar calibration coil.
  • Figure 21 is a magnetic field distribution diagram of a type three planar calibration coil on a high-intensity magnetic field X-axis magnetoresistance sensing.
  • Figure 22 is a diagram showing the X-direction magnetic field distribution of the type three-plane calibration coil at the position of the magnetoresistive sensing unit in the high-intensity magnetic field X-axis magnetoresistance sensing.
  • Figure 23 is a structural diagram of a high-intensity magnetic field X-axis magnetoresistive sensor including a planar reset coil.
  • Figure 24 is a cross-sectional view of a high-intensity magnetic field X-axis magnetoresistive sensor including a planar reset coil.
  • Figure 25 is a magnetic field distribution diagram of a planar reset coil on a high-intensity magnetic field X-axis magnetoresistance sensing.
  • Figure 26 is a diagram showing the Y-direction magnetic field distribution of the planar reset coil at the position of the magnetoresistive sensing unit in the high-intensity magnetic field X-axis magnetoresistance sensing.
  • Figure 27 is a structural diagram of a high-intensity magnetic field X-axis magnetoresistive sensor including a three-dimensional reset coil.
  • Figure 28 is a cross-sectional view of a high-intensity magnetic field X-axis magnetoresistive sensor including a three-dimensional reset coil.
  • Figure 29 is a magnetic field distribution diagram of a three-dimensional reset coil on a high-intensity magnetic field X-axis magnetoresistance sensing.
  • Figure 30 is a diagram showing the Y-direction magnetic field distribution of the planar reset coil at the position of the magnetoresistive sensing unit in the high-intensity magnetic field X-axis magnetoresistance sensing.
  • 31 is a cross-sectional view of a high-intensity magnetic field X-axis magnetoresistive sensor including a planar calibration coil and a reset coil.
  • a single-chip reference bridge magnetic sensor for high-intensity magnetic field including a substrate 1, a reference magnetoresistance on the substrate.
  • the soft magnetic flux directors include shields 2 corresponding to reference magnetoresistive sensing unit strings 4, 41, respectively 21, corresponding to the attenuators 3, 31 of the sensitive magnetoresistive sensing unit strings 5, 51;
  • the reference magnetoresistive sensing unit string and the sensitive magnetoresistive sensing unit are electrically connected into a reference bridge structure, and The connection is made by wires 6, wherein the ports include a power terminal 7, a ground terminal 9, and signal output terminals 8 and 10.
  • FIG. 1 and FIG. 2 differ in that the reference magneto-resistance sensing unit string and the sensitive magnetoresistive sensing unit string are arranged in a different order, wherein in FIG. 1, the middle two sensitive magnetoresistive sensing units are adjacent to each other, and the two sides are adjacent to each other. Corresponding to two reference magnetoresistive sensing units, in FIG. 1, the middle two sensitive magnetoresistive sensing units are adjacent to each other, and the two sides are adjacent to each other.
  • the middle two reference magnetoresistive sensing unit strings are adjacent, and the two sides correspond to two sensitive magnetoresistive sensing unit strings, wherein the reference magnetoresistive sensing unit
  • the string of cells and the pair of sensitive magnetoresistive sensing elements are located on the corresponding Y-axis center line of the shield and the attenuator, and the magnetic field sensitive direction of the magnetoresistive sensing unit string is the X-axis direction.
  • the principle is that when the external magnetic field acts in the X-axis direction, the attenuation factor of the magnetic field component generated at the reference magnetoresistive sensing unit string is very large. Because the width of the shielding device is large, the width of the shielding is much larger than the reference magnetic resistance sensing.
  • the width of the cell string is less attenuated by the magnetic field component generated at the string of sensitive magnetoresistive sensing elements. Since the width of the attenuator is small, the width amplitude is close to the width of the string of sensitive magnetoresistive sensing elements. Therefore, although the magnetoresistive sensing unit string can measure the magnetic field value is low, since the attenuator can attenuate the external magnetic field far larger than the measurable magnetic field value into the measurable magnetic field range, the shielding device can attenuate the external magnetic field to a far distance. It is smaller than the range of the measurable magnetic field amplitude, and therefore constitutes a reference bridge type high magnetic field measuring X-axis magnetic field sensor.
  • FIG. 3 is a cross-sectional view of the single-chip reference bridge X-axis magnetic sensor for high-intensity magnetic field, from bottom to top, substrate 1, magnetic resistance unit including reference magnetoresistive sensing unit string 4 and sensitive magnetic
  • the resistance sensing unit string 5, and the soft magnetic flux director that is, the shield 2 on the surface of the reference magnetoresistive sensing unit string 4 and the attenuator 3 on the surface of the sensitive magnetoresistive sensing unit string 5, in addition, including the substrate 1 and an insulating material layer 11 for isolation between the magnetoresistive sensing unit, and an insulating material layer 12 between the soft magnetic flux director and the magnetoresistive sensing unit, and an insulating material 13 covering the surface layer, and 7 indicates The four electrodes described.
  • Figure 1 and Figure 2 show the magnetoresistance in a single-chip reference bridge magnetic sensor for high-intensity magnetic fields.
  • the sensing unit string is a TMR magnetoresistive sensing unit, and includes a free layer, a pinning layer and an intermediate barrier layer.
  • the initial magnetization direction of the free layer is the Y direction
  • the magnetization direction of the pinning layer that is, the magnetic field sensitive direction is the X direction.
  • the single-chip X-axis magnetoresistive sensor described above can measure the external magnetic field component from the X-axis, but has the following problems:
  • the high-intensity magnetic field single-chip reference bridge X-axis magnetoresistive sensor of FIG. 2 is taken as an example to illustrate the types and characteristics of the calibration coil and the reset coil on the chip, and the results are also applicable.
  • the high-intensity magnetic field single-chip reference bridge X-axis magnetoresistive sensor shown in FIG. 2 is taken as an example to illustrate the types and characteristics of the calibration coil and the reset coil on the chip, and the results are also applicable.
  • FIG. 4 is a structure and a distribution diagram of a type one calibration coil 70 which is a planar coil including an elongated sensitive straight wire 101 and a reference straight wire 104 connected in series, the sensitive straight wire 101 having a width of Lx1, whose Y-axis center line is arranged along the sensitive magnetoresistive element string 51, each of the reference straight wires 104 including two sub-straight wires 102 and 103, which are connected in parallel and symmetric in the Y direction Distributed on both sides of the reference magnetoresistive sensing unit string 41, the sub-straight conductors 102 and 103 have a width of Lx2.
  • FIG. 5-7 are cross-sectional views of the X-axis magnetoresistive sensor including the type one calibration coil 70, wherein the planar calibration coil is located above the substrate 1 and under the magnetoresistive sensing unit, respectively.
  • the sensitive straight wire 101 is located below the sensitive magnetoresistive sensing cell string 51
  • the reference straight wire 104 comprises two parallel sub-straight wires 102 and 103, and 102 and 103 are symmetrically distributed over the reference magnetoresistive sensing cell string 41. On both sides.
  • the type one calibration coil 70 is located between the magnetoresistive sensing units 41, 51 and the soft magnetic flux directors 21 and 31.
  • the type one calibration coil 70 is located in the soft magnetic flux guide 21 and Above 31. Furthermore, in order to ensure electrical isolation of the type one calibration coil 70 and other portions of the X-axis magnetoresistive sensor, layers 14, 15 and 16 of insulating material are introduced.
  • a magnetic field distribution map generated by 104 wherein 104 includes two parallel sub-straight wires 102 and 103, and m1-m9 correspond to magnetoresistive sensor positions, respectively.
  • FIG. 9 is a distribution diagram of X-axis magnetic field components on a straight line corresponding to the magnetoresistive sensor connected to m1-m9 shown in FIG. 8, and it can be seen that m1, m3, m5, m7, and m9 corresponding to the attenuator have the same
  • FIG. 10 is a view showing a straight wire 101 corresponding to the attenuator 31 and corresponding to the shield included in the calibration coil when the type one calibration coil is located above the magnetoresistive sensing units 41 and 51 and under the soft magnetic flux directors 21 and 31.
  • Figure 11 is a distribution diagram of the X-axis magnetic field component on a straight line corresponding to the magnetoresistive sensor of the connection m11-m19 shown in Figure 10, it can be seen that m11, m13, m15, m17 and m19 corresponding to the attenuator have the same
  • the magnetic field values, corresponding to the m12, m14, m16 and m18 of the shield, also have the same magnetic field value, the former being much larger than the latter, Bs/Bf 8.86.
  • Figure 12 is a magnetic field distribution of a straight wire 101 corresponding to the attenuator 31 and a straight wire 104 corresponding to the shield 21 included in the calibration coil when the type one calibration coil is placed over the soft magnetic flux directors 21 and 31.
  • Figure 13 is a distribution diagram of X-axis magnetic field components on a straight line corresponding to the magnetoresistive sensor of the connection m21-m29 shown in Figure 12, and it can be seen that m21, m23, m25, m27 and m29 corresponding to the attenuator have the same
  • the type 2 planar calibration coil 80 includes two straight wires, that is, a reference straight wire 105 and a sensitive straight wire 106, respectively. Located at a gap between the shield 21 and the attenuator 31, and the reference straight wire 105 is wide, located on the side close to the shield 21, the sensitive straight wire 106 is narrow in width and is located on the side close to the attenuator 31. And the sensitive straight wire 106 and the reference straight wire 105 are connected to each other in series.
  • Figure 15 is a cross-sectional view of a type two planar calibration coil 80 on a high-intensity magnetic field single-chip X-axis magnetoresistive sensor.
  • the reference straight wire 105 and the sensitive straight wire 106 are located at the gap between the attenuator 31 and the shield 21, and are located above the magnetoresistive sensing units 41 and 51.
  • Figure 16 is a magnetic field distribution diagram of the type 2 planar calibration coil 80. It can be seen that the relative positional relationship and magnetic field distribution of the m31-m42 total of 12 magnetoresistive sensing units in the reference straight conductor and the sensitive straight conductor, Fig. 17
  • the magnetic field distribution diagram at the reference magnetoresistive sensing unit and the sensitive magnetoresistive sensing unit in FIG. 16 has a magnetic field strength at the sensitive magnetoresistive sensing unit 51 that is significantly stronger than the magnetic field strength at the reference magnetoresistive sensing unit 41.
  • the X-direction magnetic field component distribution diagram is shown in FIG.
  • the type 2 planar calibration coil 80 is located above the magnetoresistive sensing units 41 and 51, between the adjacent attenuator 21 and the shield 31, in fact, the type II is flat.
  • the face calibration coil 80 can also be located above the substrate, under the magnetoresistive sensing unit, or above the magnetoresistive sensing unit, under the soft magnetic flux director.
  • Figure 19 is a distribution diagram of a type three planar calibration coil 81 on a high intensity magnetic field single chip X-axis magnetoresistive sensor, the type three planar calibration coil 81 comprising a sensitive straight wire 107 and a reference straight wire 108, both connected in series, wherein
  • the reference straight wire 108 corresponds to the shield 21, the sensitive straight wire 107 corresponds to the attenuator 31, and the reference straight wire 108 and the sensitive straight wire 107 are each elongated, respectively
  • the attenuator 31 and the Y-axis centerline of the shield 21 coincide, and the width of the sensitive straight wire 107 is smaller than the width of the reference straight wire 108.
  • FIG. 20 is a cross-sectional view of a type three planar calibration coil 81 on a high-intensity magnetic field single-chip X-axis magnetoresistive sensor.
  • the reference straight conductor 108 and the sensitive straight conductor 107 are respectively located in the reference magnetoresistive sensing unit string 41 and the sensitive magnetoresistive sensing. Below the cell string 51.
  • the type three-plane calibration coil 81 can also be located between the magnetoresistive sensing unit and the soft magnetic flux guide, or in the soft magnetic flux guide.
  • an insulating layer 141 is introduced.
  • FIG. 21 is a distribution diagram of a magnetic field generated by a type three planar calibration coil 81 on a high-intensity magnetic field single-chip X-axis magnetoresistive sensor, wherein m51-m59 respectively represent a reference magnetoresistive sensing unit and a sensitive magnetoresistive sensing unit X.
  • the distribution of the axial magnetic field, the value of the X magnetic field distribution is shown in Fig. 22. It can be seen that the X-direction magnetic field component at the reference magnetoresistive sensing unit is very small, and the X-direction at the sensitive magnetoresistive sensing unit.
  • FIG. 23 is a distribution diagram of a planar reset coil 82 on a single-chip high-intensity magnetic field X-axis magnetoresistive sensor, including two straight wires 109 and 110 connected in series, the straight wires being perpendicular to the Y-axis center line, wherein a straight wire 109 is located in the magnetoresistive sensing unit of the magnetoresistive sensing unit array in the X direction The line is directly above or directly below, and the straight wire 110 is located at the gap of the adjacent two magnetoresistive sensing unit rows or at the two outer positions of the row of the magnetoresistive sensing unit.
  • Figure 24 is a cross-sectional view of the planar reset coil 82 on a single-chip high-intensity magnetic field X-axis magnetoresistive sensor located above the substrate and under the magnetoresistive sensing unit, for convenience of explanation, this example Only one case is given.
  • the planar reset coil 82 may also be located between the magnetoresistive sensing unit and the soft magnetic flux director or on the soft magnetic flux guide. Further, in order to secure electrical insulation between the planar reset coil 82 and the magnetoresistive sensing units 41 and 51, an insulating material 143 is introduced.
  • FIG. 25 is a magnetic field distribution diagram of the planar reset coil 82 on a single-chip high-intensity magnetic field X-axis magnetoresistive sensor, wherein the magnetoresistive sensing unit m61-m65 is located on the surface of the attenuator 21 or the shield 31, and its X direction
  • the magnetic field distribution curve is as shown in Fig. 26.
  • the magnetoresistive sensing units m61-m65 have the same Y-direction magnetic field component.
  • FIG. 27 is a distribution diagram of a three-dimensional reset coil 83 on a single-chip high magnetic field strength magnetic field X-axis magnetoresistive sensor, including a straight wire perpendicular to the center line of the Y axis, including a top straight wire 111 and a bottom straight wire 112.
  • the top straight wire 111 and the bottom straight wire 112 form a three-dimensional helical coil structure, and the soft magnetic flux guide and the magnetoresistive sensing unit are magnetic cores, and the three-dimensional helical coil structure has an axial direction of the Y direction, and the top layer The same spacing is between the straight wires 111 and the bottom straight wires 112.
  • FIG. 28 is a cross-sectional view of the three-dimensional reset coil 83 on a single-chip high-intensity magnetic field X-axis magnetoresistive sensor, the top-level straight wire 112 of the three-dimensional reset coil being located above the soft magnetic flux directors 21 and 31, The bottom straight conductor 112 is located above the substrate, under the magnetoresistive sensing units 41 and 51.
  • insulating material layers 131 and 144 are introduced.
  • FIG. 29 is a magnetic field distribution diagram of the three-dimensional reset coil 83 on a single-chip high-intensity magnetic field X-axis magnetoresistive sensor, wherein m71-m75 are respectively the magnetoresistive sensing unit 41 or 51 on the attenuator 21 or the shield 31, respectively.
  • the distribution, the corresponding Y-direction magnetic field component is shown in Fig. 30, and it can be seen that the Y-direction magnetic field component has a periodic distribution characteristic as long as the top-layer straight wire 111 and the bottom layer of the three-dimensional reset coil 83 are reset.
  • the straight wires 112 have a uniform pitch, and the magnetoresistive sensing unit 41 or 51 has an equidistant periodic distribution in the Y direction on the attenuator 21 or the shield 31, respectively, that is, the Y-direction magnetic field of the magnetoresistive sensing unit can be ensured. Evenly distributed features.
  • FIG. 31 is a one-chip high-field-strength X-axis magnetoresistive sensor including a calibration coil and a reset coil, wherein reset The coil is a planar reset coil comprising reset direct conductors 109 and 110, the calibration coil being a planar coil comprising a reference straight conductor 101 and a sensitive straight conductor 104, said 101 and 104 being located above the magnetic sensing unit, Below the soft magnetic flux guide, the sensitive straight wire contains two sub-straight wires 102 and 103. Furthermore, in order to ensure electrical insulation between the calibration coil and the reset coil and other parts, layers of insulating material 111, 122 and 152 are introduced.
  • this example only shows a single-chip high-field-strength X-axis magnetoresistive sensor including a calibration coil and a reset coil.
  • the calibration coil can be any of type one, type two, and type three.
  • the reset coil may be a planar reset coil or a three-dimensional reset coil.
  • the calibration coil and the planar reset coil may be located above the substrate, under the magnetoresistive sensing unit, or the magnetoresistive sensing Between the unit and the soft flux guide, or any position above the soft flux guide, the two are independent of each other; for the calibration coil and the 3D reset coil, the calibration coil can be located at the above positions, but the three-dimensional weight There is only one case where the coil is placed, that is, the soft magnetic flux guide and the magnetoresistive sensing unit are centered.
  • the reset coil and/or the calibration coil are isolated from the high-intensity magnetic field single-chip reference bridge X-axis magnetoresistive sensor by an insulating material of SiO 2 , Al 2 O 3 , Si 3 N 4 , polyimide or photoresist.
  • the reset coil and the calibration coil are high conductivity materials such as Cu, Au or Ag.

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Abstract

一种单芯片具有校准线圈（70，80，81）和/或重置线圈（82，83）的高强度磁场X轴线性磁电阻传感器，包括高强度磁场单芯片参考桥式X轴磁电阻传感器及校准线圈（70，80，81）和/或重置线圈（82，83），所述校准线圈（70，80，81）为平面线圈，所述重置线圈（82，83）为平面或三维线圈，所述平面校准线圈（70，80，81）和平面重置线圈（82）可以位于衬底（1）之上磁电阻传感单元（4，41，5，51）之下、磁电阻传感单元（4，41，5，51）和软磁通量引导器之间、软磁通量引导器之上或间隙处，所述三维重置线圈（83）缠绕软磁通量引导器和磁电阻传感单元（4，41，5，51），所述校准线圈（70，80，81）和重置线圈（82，83）分别在磁电阻传感单元（4，41，5，51）处产生平行于钉扎层方向的校准磁场和自由层方向的均匀重置磁场。通过控制校准线圈（70，80，81）和重置线圈（82，83）电流可实现单芯片X轴线性磁电阻传感器校准及磁状态重置。

Description

一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器 技术领域
本发明涉及磁性传感器领域，特别涉及一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器。
背景技术
硅磁传感器主要包括Hall磁传感器、AMR磁传感器、GMR磁传感器。Hall磁传感器通过在衬底上沉积半导体薄膜如碲化铟，通过外磁场对于载流子的路径的偏转来获得不同的阻值，其优点在于，Hall磁电阻传感器所能测量的磁场范围较宽，其缺点在于，磁场灵敏度较低，通常需要引入通量集中器来对外磁场进行放大。AMR磁传感器在衬底上沉积单层磁性薄膜，通过外磁场改变磁性薄膜的磁矩方向，从而改变其两端的电阻，其传感单元和电极均制备成斜条状，以使得电流方向和磁场方向成一定夹角，从而能够对磁场方向进行辨别，其优点在于，传感器单元简单，只有一层薄膜，其缺点在于，传感器磁场变化率较低，灵敏度差。GMR多层薄膜磁传感器是通过磁性薄膜和导电薄膜构成纳米多层薄膜结构形成的磁电阻传感器，通过改变磁性薄膜层的磁化方向，通过磁场对载流子在通过多层薄膜时对磁性载流子路径的改变来改变电阻，其磁电阻变化率相对于AMR传感器得到进一步的提高。
与以上技术相比，TMR磁性多层薄膜传感器，通过引入参考磁性层、钉扎层、非金属隔离层以及磁性自由层，通过外磁场来控制自由层的磁化方向，从而改变磁性自由层的两种自旋电子的相对比率，使得从参考自由层隧穿进入磁性自由层的电流变化，导致传感器的电阻发生变化，其磁电阻变化率可以达到200％，远远高于Hall，AMR以及GMR类型的磁电阻传感器。
目前，硅磁三轴线性磁电阻传感器在消费电子产品如手机、平板电脑等电子产品中得到广泛的应用，三轴线性磁电阻传感器包括X轴线性磁电阻传感器、Y轴线性磁电阻传感器、Z轴线性磁电阻传感器，但目前为止，这些传感 器主要以Hall、AMR或者GMR为主。
因此，为了拓展TMR磁电阻传感器的应用领域和范围，本发明提出了一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其具有优良的线性范围和磁场灵敏度，完全可以取代目前的Hall、AMR或者GMR类型的X轴线性磁电阻传感器。
发明内容
本发明提出了一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，在芯片上引入校准线圈/重置线圈，通过在校准线圈中通过适当电流，在敏感磁电阻单元串和参考磁电阻单元串所在位置分别沿X方向产生校准磁场，并且实现通过校准电流的调节实现校准磁场大小的精确调节，由于校准线圈位于所述X轴传感器芯片上，因此测量时只需要通过探针即可以施加电流的方式进行测量，从而提高了测量的效率，并且保证了测量的精度。
同样，当X轴磁电阻传感器受外磁场作用发生不可逆的磁化状态改变时，可以在重置线圈中通入电流，在所有磁电阻传感单元处产生沿自由层起始磁化方向的外磁场，从而对自由层磁化状态进行恢复，消除由于磁场作用历史对软磁薄膜磁化状态的影响。
本发明所提出的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，包括高强度磁场单芯片参考桥式X轴磁电阻传感器、校准线圈和/或重置线圈；
所述高强度磁场单芯片参考桥式X轴磁电阻传感器包括位于衬底之上交错排列的参考磁电阻传感单元串和敏感磁电阻传感单元串，以及长条形软磁通量引导器，所述软磁通量引导器包括屏蔽器和衰减器，所述参考磁电阻传感单元串和敏感磁电阻传感单元串分别位于所述屏蔽器和所述衰减器表面的Y轴中心线位置，所述参考磁电阻传感单元串和敏感磁电阻传感单元串电连接成参考桥式结构，敏感方向为X轴方向，所述参考磁电阻传感单元串和敏感磁电阻传感单元串均包括多个磁电阻单元；所述校准线圈为平面线圈，包括平行且串联连 接的分别对应于所述参考磁电阻传感单元串和敏感磁电阻传感单元串的参考直导线和敏感直导线，所述两组直导线分别在所述参考磁电阻传感单元串和敏感磁电阻传感单元串位置处沿磁电阻传感单元敏感方向产生参考校准磁场和敏感校准磁场；
所述重置线圈包括多个垂直于所述敏感磁电阻传感单元串和参考磁电阻传感单元串的重置直导线，并在所有磁电阻传感单元串处沿垂直于敏感方向产生相同重置磁场；
校准时，所述校准线圈中通过校准电流，在所述敏感磁电阻传感单元串和参考磁电阻传感单元串处分别产生X向敏感校准磁场和参考校准磁场，通过测量所述X轴磁电阻传感器的输出信号，从而实现校准功能；重置时，在所述重置线圈中通过重置电流，在所述每个磁电阻传感单元处沿Y向产生重置磁场，从而实现磁电阻传感单元的磁状态恢复。
所述校准线圈的敏感直导线为长条形，宽度为Lx1，其相对于所述衰减器的Y轴中心线对称；所述校准线圈的每一段参考直导线包括两个并联连接的子直导线，所述子直导线为长条形，宽度为Lx2，所述两个子直导线对称分布于所述参考磁电阻传感单元串的两侧，且Lx2小于Lx1，所述参考直导线和所述敏感直导线串联连接。
优选地，所述校准线圈的敏感直导线为长条形，宽度为Lx1，其相对于所述衰减器的Y轴中心线对称；所述校准线圈的参考直导线为长条形，宽度为Lx2，其相对于所述屏蔽器的Y轴中心线对称，且Lx1小于Lx2，所述参考直导线和所述敏感直导线串联连接。
优选地，所述校准线圈的参考直导线和敏感直导线都位于相邻所述屏蔽器和衰减器之间的间隙处，其中，所述参考直导线位于靠近所述屏蔽器的一侧，所述敏感直导线位于靠近所述衰减器的一侧，所述敏感直导线和所述参考直导线均为长条形，宽度分别为Lx1和Lx2，其中Lx1小于Lx2，所述参考直导线和所述敏感直导线串联连接。
所述校准线圈在所述敏感磁电阻传感单元串和所述参考磁电阻传感单元串处沿敏感方向产生的磁场比率接近或超过所述X外磁场在所述敏感磁电阻传感单元串和所述参考磁电阻传感单元串处的沿敏感方向的磁场比率。
所述校准线圈位于所述衬底之上、磁电阻传感单元之下，或者位于所述磁电阻传感单元和所述软磁通量引导器之间，或者位于所述软磁通量引导器之上。
优选地，所述校准线圈位于所述衬底之上、所述磁电阻传感单元之下，或者位于所述磁电阻传感单元和所述软磁通量引导器之间，或者位于所述磁电阻传感单元之上且处于所述软磁通量引导器的屏蔽器和衰减器之间的间隙处。
所述重置线圈为平面重置线圈，所述重置直导线位于所述磁电阻传感单元阵列的沿X方向排列的磁电阻传感单元串的正上方或者正下方。
所述重置线圈为三维重置线圈，包含垂直于所述Y轴中心线的顶层直导线和底层直导线，所述顶层直导线和底层直导线串联形成三维线圈，所述三维线圈缠绕所述软磁通量引导器以及所述磁电阻传感单元，所述顶层直导线和底层直导线分别位于所述软磁通量引导器和磁电阻传感单元的表面，所述顶层直导线和底层直导线在所述表面上各自具有相同排列间隔。
所述平面重置线圈可以位于所述衬底之上、磁电阻传感单元之下，或者位于磁电阻传感单元和软磁通量引导器之间，或者位于软磁通量引导器之上。
所述重置线圈和校准线圈为高导电率材料，如Cu、Au或Ag。
所述重置线圈和/或校准线圈与所述高强度磁场单芯片参考桥式X轴磁电阻传感器之间采用绝缘材料隔离，所述绝缘材料为SiO2、Al2O3、Si3N4、聚酰亚胺或光刻胶。
所述校准线圈包含一个正的端口和一个负的端口，所述两个端口通过电流时，其所产生校准磁场幅度范围在所述磁电阻传感单元的线性工作区域内。
所述校准电流可以设定为一个电流值，或者多个电流值。
所述重置线圈包含两个端口，当两端口通过电流时，其所产生的重置磁场大小为高于所述磁电阻传感单元的饱和磁场值。
所述重置电流可以为脉冲电流或直流电流。
附图说明
图1为高强度磁场单芯片参考桥式X轴磁电阻传感器结构图一。
图2为高强度磁场单芯片参考桥式X轴磁电阻传感器结构图二。
图3为高强度磁场单芯片参考桥式X轴磁电阻传感器截面结构图。
图4为包含类型一平面校准线圈高强度磁场X轴线性磁电阻传感器结构图。
图5为包含类型一平面校准线圈高强度磁场X轴线性磁电阻传感器截面图一。
图6为包含类型一平面校准线圈高强度磁场X轴线性磁电阻传感器截面图二。
图7为包含类型一平面校准线圈高强度磁场X轴线性磁电阻传感器截面图三。
图8为类型一平面校准线圈在高强度磁场X轴线性磁电阻传感上磁场分布图一。
图9为类型一平面校准线圈在高强度磁场X轴线性磁电阻传感在磁电阻传感单元位置处X向磁场分布图一。
图10为类型一平面校准线圈在高强度磁场X轴线性磁电阻传感上磁场分布图二。
图11为类型一平面校准线圈在高强度磁场X轴线性磁电阻传感在磁电阻传感单元位置处X向磁场分布图二。
图12为类型一平面校准线圈在高强度磁场X轴线性磁电阻传感上磁场分布图三。
图13为类型一平面校准线圈在高强度磁场X轴线性磁电阻传感在磁电阻传感单元位置处X向磁场分布图三。
图14为包含类型二平面校准线圈高强度磁场X轴线性磁电阻传感器结构图。
图15为包含类型二平面校准线圈高强度磁场X轴线性磁电阻传感器截面图。
图16为类型二平面校准线圈在高强度磁场X轴线性磁电阻传感上磁场分布图。
图17为类型二平面校准线圈在高强度磁场X轴线性磁电阻传感上磁场分 布图二。
图18为类型二平面校准线圈在高强度磁场X轴线性磁电阻传感在磁电阻传感单元位置处X向磁场分布图。
图19为包含类型三平面校准线圈高强度磁场X轴线性磁电阻传感器结构图。
图20为包含类型三平面校准线圈高强度磁场X轴线性磁电阻传感器截面图。
图21为类型三平面校准线圈在高强度磁场X轴线性磁电阻传感上磁场分布图。
图22为类型三平面校准线圈在高强度磁场X轴线性磁电阻传感在磁电阻传感单元位置处X向磁场分布图。
图23为包含平面重置线圈高强度磁场X轴线性磁电阻传感器结构图。
图24为包含平面重置线圈高强度磁场X轴线性磁电阻传感器截面图。
图25为平面重置线圈在高强度磁场X轴线性磁电阻传感上磁场分布图。
图26为平面重置线圈在高强度磁场X轴线性磁电阻传感在磁电阻传感单元位置处Y向磁场分布图。
图27为包含三维重置线圈高强度磁场X轴线性磁电阻传感器结构图。
图28为包含三维重置线圈高强度磁场X轴线性磁电阻传感器截面图。
图29为三维重置线圈在高强度磁场X轴线性磁电阻传感上磁场分布图。
图30为平面重置线圈在高强度磁场X轴线性磁电阻传感在磁电阻传感单元位置处Y向磁场分布图。
图31为包含平面校准线圈和重置线圈的高强度磁场X轴线性磁电阻传感器截面图。
具体实施方式
在中国专利201310719255.9中，公布了一种用于高强度磁场的单芯片参考桥式磁传感器，如图1和图2所示，包括衬底1，位于衬底之上的参考磁电阻 传感单元串4、41，敏感磁电阻传感单元串5、51，以及软磁通量引导器；所述软磁通量引导器包括分别对应于参考磁电阻传感单元串4、41的屏蔽器2、21，分别对应于敏感磁电阻传感单元串5、51的衰减器3、31；所述参考磁电阻传感单元串和所述敏感磁电阻传感单元串电连接成参考桥式结构，并通过导线6进行连接，其中端口包括电源端7、接地端9、以及信号输出端8和10。其中，图1和图2的区别在于，参考磁电阻传感单元串和敏感磁电阻传感单元串排列顺序的不同，其中图1中，中间两个敏感磁电阻传感单元相邻，而两边对应为两个参考磁电阻传感单元，图2中，中间两个参考磁电阻传感单元串相邻，而两边对应为两个敏感磁电阻传感单元串，其中所述参考磁电阻传感单元串和敏感磁电阻传感单元串位于所对应的屏蔽器以及衰减器的Y轴中心线上，并且所述磁电阻传感单元串的磁场敏感方向为X轴方向。其原理在于，在X轴方向外磁场作用时，其在参考磁电阻传感单元串处所产生的磁场分量衰减因子非常大，由于屏蔽器的宽度较大，其宽度幅度远大于参考磁电阻传感单元串的宽度，另一方面，在敏感磁电阻传感单元串处所产生的磁场分量衰减幅度则较小，由于衰减器的宽度较小，宽度幅度接近敏感磁电阻传感单元串的宽度。因此，虽然磁电阻传感单元串可测量磁场值较低，但是由于衰减器能够将远大于可测量磁场值的外磁场衰减到可测量磁场范围内，而屏蔽器则能将外磁场衰减到远小于可测量磁场幅度的范围，因此，构成一个参考桥式高磁场测量X轴磁场传感器。
图3为所述用于高强度磁场的单芯片参考桥式X轴磁传感器的截面图，从下到上依次为，衬底1，磁电阻单元包括参考磁电阻传感单元串4和敏感磁电阻传感单元串5，以及软磁通量引导器即位于参考磁电阻传感单元串4表面的屏蔽器2以及位于敏感磁电阻传感单元串5表面的衰减器3，此外，还包括位于衬底1和磁电阻传感单元之间用于隔离的绝缘材料层11，以及位于软磁通量引导器和磁电阻传感单元之间的绝缘材料层12，以及覆盖表层的绝缘材料13，此外7表示所述的四个电极。
图1和图2所述用于高强度磁场的单芯片参考桥式磁传感器中的磁电阻传 感单元串为TMR磁电阻传感单元，包含自由层、钉扎层以及中间势垒层，其自由层的起始磁化方向为Y方向，钉扎层磁化方向即磁场敏感方向为X方向。以上所述单芯片X轴磁电阻传感器可以实现来自于X轴的外磁场分量的测量，但存在如下问题：
1)晶圆测试阶段，需要设计复杂的X向外磁场产生系统，包括电磁线圈和电磁线圈电源，而且电磁线圈系统需要随着探针平台一起移动，从而增加了测量的成本，影响了测量的效率；
2)电磁线圈系统磁场的施加和定位存在着不精确的问题，从而影响测量的精度；
3)由于自由层软磁薄膜中存在磁畴，在外磁场作用时，存在着畴壁移动的不可逆性，导致在外磁场移除之后，自由层磁性薄膜无法回复起始状态，并且导致磁滞的出现，使得传感器测量可重复性难以保障。
下面将参考附图并结合实施例，来详细说明本发明。
为了方便起见，下面以图2中的高强度磁场单芯片参考桥式X轴磁电阻传感器为例来对校准线圈和重置线圈在芯片上的排布种类及其特征进行说明，其结果同样适用于图1所示的高强度磁场单芯片参考桥式X轴磁电阻传感器。
实施例一
图4为类型一校准线圈70的结构及分布图，所述校准线圈70为平面线圈，包括串联连接的长条形敏感直导线101和参考直导线104，所述敏感直导线101，其宽度为Lx1，其Y轴中心线沿着敏感磁电阻单元串51排列，所述每一段参考直导线104包括两个子直导线102和103，所述子直导线102和103并联连接，并且沿Y方向对称分布于参考磁电阻传感单元串41的两侧，所述子直导线102和103宽度均为Lx2。
图5-7分别为图4所示为包含类型一校准线圈70的X轴磁电阻传感器的截面图，其中，图5中，平面校准线圈位于衬底1之上、磁电阻传感单元之下， 其中敏感直导线101位于敏感磁电阻传感单元串51之下，参考直导线104包含两个并联的子直导线102和103，并且102和103对称的分布于参考磁电阻传感单元串41的两侧。
图6中，所述类型一校准线圈70位于磁电阻传感单元41、51和软磁通量引导器21和31之间，图7中，所述类型一校准线圈70则位于软磁通量引导器21和31之上。此外，为了保证类型一校准线圈70和X轴磁电阻传感器其它部分的电绝缘，引入了绝缘材料层14、15和16。
图8为类型一校准线圈位于所述磁电阻传感单元41和51之下、衬底之上时，校准线圈所包含的对应于衰减器31的直导线101和对应于屏蔽器21的直导线104所产生的磁场分布图，其中104包含两个并联的子直导线102和103，m1-m9分别对应于磁电阻传感器位置。
图9为对应于图8所示的连接m1-m9的磁电阻传感器的直线上的X轴向磁场分量分布图，可以看出，对应于衰减器的m1、m3、m5、m7和m9具有相同的磁场值，对应于屏蔽器的m2、m4、m6和m8同样具有相同的磁场值，前者远大于后者，Bs/Bf＝8.28，其中Bs为敏感磁场幅度值，Bf为参考磁场幅度值。
图10为类型一校准线圈位于所述磁电阻传感单元41和51之上、软磁通量引导器21和31之下时，校准线圈所包含的对应于衰减器31的直导线101和对应于屏蔽器21的直导线104所产生的磁场分布图，其中104包含两个并联的子直导线102和103，m11-m19分别对应于磁电阻传感器位置。
图11为对应于图10所示的连接m11-m19的磁电阻传感器的直线上的X轴向磁场分量分布图，可以看出，对应于衰减器的m11、m13、m15、m17和m19具有相同的磁场值，对应于屏蔽器的m12、m14、m16和m18同样具有相同的磁场值，前者远大于后者，Bs/Bf＝8.86。
图12为类型一校准线圈位于所述软磁通量引导器21和31之上时，校准线圈所包含的对应于衰减器31的直导线101和对应于屏蔽器21的直导线104所产生的磁场分布图，其中104包含两个并联的子直导线102和103，m21-m29 分别对应于磁电阻传感器位置。
图13为对应于图12所示的连接m21-m29的磁电阻传感器的直线上的X轴向磁场分量分布图，可以看出，对应于衰减器的m21、m23、m25、m27和m29具有相同的磁场值，对应于屏蔽器的m22、m24、m26和m28同样具有相同的磁场值，前者远大于后者，不过可以看出，由于软磁通量引导器对于外磁场的屏蔽的作用，对于衰减器和屏蔽器都产生相当大的衰减，尤其是衰减器磁场，相对于图10和图8，其磁场幅度都大幅减小，Bs/Bf＝9.36。
实施例二
图14为类型二平面校准线圈80在高强度磁场的单芯片X轴线性磁电阻传感器上的结构图，类型二平面校准线圈80包含两个直导线即参考直导线105和敏感直导线106，分别位于屏蔽器21和衰减器31之间的间隙处，且所述参考直导线105宽度较宽，位于靠近屏蔽器21的一侧，敏感直导线106宽度较窄，位于靠近衰减器31的一侧，且所述敏感直导线106和参考直导线105之间相互串联连接。
图15为类型二平面校准线圈80在高强度磁场的单芯片X轴线性磁电阻传感器上的截面图。其中，参考直导线105和敏感直导线106位于衰减器31和屏蔽器21之间的间隙处，且位于磁电阻传感单元41和51之上。
图16为类型二平面校准线圈80工作时的磁场分布图，可以看出，m31-m42共12个磁电阻传感单元在参考直导线和敏感直导线的相对位置关系以及磁场分布，图17为图16中在参考磁电阻传感单元和敏感磁电阻传感单元处的磁场分布图，在敏感磁电阻传感单元处51的磁场强度明显强于在参考磁电阻传感单元41处的磁场强度，其X方向磁场分量分布图如图18所示，其中参考磁电阻传感单元处X方向磁场接近于0，而敏感磁电阻传感单元X方向磁场有一个突起，其中Bs/Bf＝128.96。
本方案为了说明方便，只给出了类型二平面校准线圈80位于磁电阻传感单元41和51之上、相邻衰减器21和屏蔽器31之间的情况，实际上类型二平 面校准线圈80还可以位于衬底之上、磁电阻传感单元之下，或者位于磁电阻传感单元之上、软磁通量引导器之下。
实施例三
图19为类型三平面校准线圈81在高强度磁场单芯片X轴磁电阻传感器上的分布图，所述类型三平面校准线圈81包括敏感直导线107和参考直导线108，两者串联连接，其中参考直导线108对应于所述屏蔽器21，所述敏感直导线107对应于所述衰减器31，所述参考直导线108和所述敏感直导线107都为长条形，其分别于所述衰减器31和屏蔽器21的Y轴中心线重合，所述敏感直导线107宽度要小于参考直导线108的宽度。
图20为类型三平面校准线圈81在高强度磁场单芯片X轴磁电阻传感器上的截面图，参考直导线108和敏感直导线107分别位于参考磁电阻传感单元串41和敏感磁电阻传感单元串51之下。需要指出的是，本例为了方便说明，只给出了一种情况，实际上，类型三平面校准线圈81还可以位于磁电阻传感单元和软磁通量引导器之间，或者位于软磁通量引导器之上。此外，为了保证类型三平面校准线圈81与磁电阻传感单元41和51之间的电绝缘，引入了绝缘层141。
图21为类型三平面校准线圈81所产生的磁场在高强度磁场单芯片X轴磁电阻传感器上的分布图，其中m51-m59分别表示参考磁电阻传感单元和敏感磁电阻传感单元处X轴向磁场的分布图，其X磁场分布数值如图22所示，可以看出，在参考磁电阻传感单元处的X向磁场分量非常小，而在敏感磁电阻传感单元处的X向磁场分量则明显增加，其中Bs/Bf＝5.68。
实施例四
图23为平面重置线圈82在单芯片高强度磁场X轴磁电阻传感器上的分布图，包括串联连接的两种直导线109和110，所述直导线垂直于所述Y轴中心线，其中直导线109位于所述磁电阻传感单元阵列沿X方向的磁电阻传感单元 行正上方或者正下方，而直导线110位于所述相邻两个磁电阻传感单元行的间隙或者磁电阻传感单元行的两个外侧位置处。
图24为平面重置线圈82在单芯片高强度磁场X轴磁电阻传感器上的截面图，所述平面重置线圈位于衬底之上、磁电阻传感单元之下，为了方便说明，本例只给出了一种情况，实际实施时，平面重置线圈82还可以位于磁电阻传感单元和软磁通量引导器之间，或者位于所述软磁通量引导器之上。此外，为了保证平面重置线圈82与磁电阻传感单元41和51之间的电绝缘，引入了绝缘材料143。
图25为平面重置线圈82在单芯片高强度磁场X轴磁电阻传感器上的磁场分布图，其中，磁电阻传感单元m61-m65为位于衰减器21或者屏蔽器31表面上，其X向磁场分布曲线如图26所示，从图24看可以看出，所述磁电阻传感单元m61-m65位置具有相同的Y向磁场分量。
实施例五
图27为三维重置线圈83在单芯片高磁场强度磁场X轴磁电阻传感器上的分布图，包含垂直于所述Y轴中心线的直导线，包括顶层直导线111以及底层直导线112，所述顶层直导线111和所述底层直导线112形成三维螺线圈结构，并以软磁通量引导器和磁电阻传感单元为磁芯，所述三维螺线圈结构轴心方向为Y方向，所述顶层直导线111之间以及底层直导线112之间具有相同的间距。
图28为三维重置线圈83在单芯片高强度磁场X轴磁电阻传感器上的截面图，所述三维重置线圈的顶层直导线112位于所述软磁通量引导器21和31之上，所述底层直导线112位于衬底之上，磁电阻传感单元41和51之下。为了保证三维重置线圈83和其他部分之间的电绝缘，引入了绝缘材料层131和144。
图29为三维重置线圈83在单芯片高强度磁场X轴磁电阻传感器上的磁场分布图，其中m71-m75分别为磁电阻传感单元41或51分别在衰减器21或者屏蔽器31上的分布，对应的Y向磁场分量如图30所示，可以看出，Y向磁场分量具有周期性分布的特点，只要三维重置线圈83的顶层直导线111和底层 直导线112具有均匀的间距，并且磁电阻传感单元41或51分别在衰减器21或者屏蔽器31上沿Y方向具有等距离的周期分布，即可以保证磁电阻传感单元的Y向磁场的均匀分布特征。
实施例六
以上为包含单个校准线圈或者包含单个重置线圈的单芯片高磁场强度X轴磁电阻传感器，图31为同时包含校准线圈和重置线圈的单芯片高磁场强度X轴磁电阻传感器，其中重置线圈为平面重置线圈，其包含的重置直导线109和110，校准线圈为平面线圈，其包含的参考直导线101和敏感直导线104，所述101和104位于磁传感单元之上、软磁通量引导器之下，敏感直导线包含两个子直导线102和103。此外，为了保证校准线圈和重置线圈与其它部分之间的电绝缘，引入了绝缘材料层111、122和152。
为了说明方便，本例只给出了一种包含校准线圈和重置线圈的单芯片高磁场强度X轴磁电阻传感器，实际上，校准线圈可以为类型一、类型二、类型三其中的任一种，重置线圈可以为平面重置线圈或者三维重置线圈，从其位置来看，校准线圈和平面重置线圈可以位于衬底之上、磁电阻传感单元之下，或者磁电阻传感单元和软磁通量引导器之间，或者软磁通量引导器之上的任一位置，两者互相独立；而对于校准线圈和三维重置线圈，则校准线圈可以位于位于上述几处位置，但三维重置线圈只有一种情况，即以软磁通量引导器和磁电阻传感单元为中心进行环绕。
所述重置线圈和/或校准线圈与所述高强度磁场单芯片参考桥式X轴磁电阻传感器之间采用绝缘材料隔离，所述绝缘材料为SiO2、Al2O3、Si3N4、聚酰亚胺或光刻胶。所述重置线圈和校准线圈为高导电率材料，如Cu、Au或Ag。

Claims (16)

  1. 一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，包括高强度磁场单芯片参考桥式X轴磁电阻传感器、校准线圈和/或重置线圈；
    所述高强度磁场单芯片参考桥式X轴磁电阻传感器包括位于衬底之上交错排列的参考磁电阻传感单元串和敏感磁电阻传感单元串，以及长条形软磁通量引导器，所述软磁通量引导器包括屏蔽器和衰减器，所述参考磁电阻传感单元串和敏感磁电阻传感单元串分别位于所述屏蔽器和所述衰减器表面的Y轴中心线位置，所述参考磁电阻传感单元串和敏感磁电阻传感单元串电连接成参考桥式结构，敏感方向为X轴方向，所述参考磁电阻传感单元串和敏感磁电阻传感单元串均包括多个磁电阻单元；
    所述校准线圈为平面线圈，包括平行且串联连接的分别对应于所述参考磁电阻传感单元串和敏感磁电阻传感单元串的参考直导线和敏感直导线，所述参考直导线和所述敏感直导线分别在所述参考磁电阻传感单元串和敏感磁电阻传感单元串位置处沿磁电阻传感单元敏感方向产生参考校准磁场和敏感校准磁场；
    所述重置线圈包括多个垂直于所述敏感磁电阻传感单元串和参考磁电阻传感单元串的重置直导线，并在所有磁电阻传感单元串处沿垂直于敏感方向产生相同重置磁场。
  2. 根据权利要求1所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述校准线圈的敏感直导线为长条形，宽度为Lx1，其相对于所述衰减器的Y轴中心线对称；所述校准线圈的每一段参考直导线包括两个并联连接的子直导线，所述子直导线为长条形，宽度为Lx2，所述两个子直导线对称分布于所述参考磁电阻传感单元串的两侧，且Lx2小于Lx1，所述参考直导线和所述敏感直导线串联连接。
  3. 根据权利要求1所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述校准线圈的敏感直导线为长条形， 宽度为Lx1，其相对于所述衰减器的Y轴中心线对称；所述参考直导线为长条形，宽度为Lx2，其相对于所述屏蔽器的Y轴中心线对称，且Lx1小于Lx2，所述参考直导线和所述敏感直导线串联连接。
  4. 根据权利要求1所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述校准线圈的参考直导线和敏感直导线都位于相邻所述屏蔽器和衰减器之间的间隙处，其中，所述参考直导线位于靠近所述屏蔽器的一侧，所述敏感直导线位于靠近所述衰减器的一侧，所述敏感直导线和所述参考直导线均为长条形，宽度分别为Lx1和Lx2，其中Lx1小于Lx2，所述参考直导线和所述敏感直导线串联连接。
  5. 根据权利要求2-4中任意一项所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述敏感校准磁场和参考校准磁场比率大于等于X轴外加磁场在所述敏感磁电阻传感单元串和参考磁电阻传感单元串处的沿敏感方向的磁场比率。
  6. 根据权利要求2或3所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述校准线圈位于所述衬底之上、所述磁电阻传感单元之下，或者位于所述磁电阻传感单元和所述软磁通量引导器之间，或者位于所述软磁通量引导器之上。
  7. 根据权利要求4所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述校准线圈位于所述衬底之上、所述磁电阻传感单元之下，或者位于所述磁电阻传感单元和所述软磁通量引导器之间，或者位于所述磁电阻传感单元之上且处于所述软磁通量引导器的屏蔽器和衰减器之间的间隙处。
  8. 根据权利要求1所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述重置线圈为平面重置线圈，所述重置直导线位于所述磁电阻传感单元阵列的沿所述X轴方向排列的磁电阻传感 单元行的正上方或者正下方。
  9. 根据权利要求1所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述重置线圈为三维重置线圈，包含垂直于所述Y轴中心线的顶层直导线和底层直导线，所述顶层直导线和底层直导线串联形成三维线圈，所述三维线圈缠绕所述软磁通量引导器以及所述磁电阻传感单元，所述顶层直导线之间以及底层直导线之间分别以相同间隔排列在所述软磁通量引导器和磁电阻传感单元的表面。
  10. 根据权利要求8所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述平面重置线圈位于所述衬底之上、磁电阻传感单元之下，或者位于磁电阻传感单元和软磁通量引导器之间，或者位于软磁通量引导器之上。
  11. 根据权利要求1-10中任意一项所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述重置线圈和校准线圈为高导电率材料，所述高导电率材料为Cu、Au或Ag。
  12. 根据权利要求1-10中任意一项所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述重置线圈和/或校准线圈与所述高强度磁场单芯片参考桥式X轴磁电阻传感器之间采用绝缘材料隔离，所述绝缘材料为SiO2、Al2O3、Si3N4、聚酰亚胺或光刻胶。
  13. 根据权利要求1、2、3、4或7所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述校准线圈包含一个正的端口和一个负的端口，所述两个端口通过校准电流时，其所产生的校准磁场幅度范围在所述磁电阻传感单元的线性工作区域内。
  14. 根据权利要求13所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述校准电流为设定的一个电流值 或者多个电流值。
  15. 根据权利要求1、8、9或10所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述重置线圈包含两个端口，当两端口通过重置电流时，其所产生的重置磁场大小为高于所述磁电阻传感单元的饱和磁场值。
  16. 根据权利要求15所述的一种单芯片具有校准线圈/重置线圈的高强度磁场X轴线性磁电阻传感器，其特征在于，所述重置电流为脉冲电流或直流电流。
PCT/CN2016/073244 2015-02-04 2016-02-03 一种单芯片具有校准线圈和/或重置线圈的高强度磁场x轴线性磁电阻传感器 WO2016124135A1 (zh)

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