WO2015000671A1

WO2015000671A1 - Optoelectronic component device, method for producing an optoelectronic component device, and method for operating an optoelectronic component device

Info

Publication number: WO2015000671A1
Application number: PCT/EP2014/062279
Authority: WO
Inventors: Michael Popp; Arndt Jaeger
Original assignee: Osram Oled Gmbh
Priority date: 2013-07-02
Filing date: 2014-06-12
Publication date: 2015-01-08
Also published as: DE102013106944A1

Abstract

The invention relates to an optoelectronic component device in various embodiments, which optoelectronic component device comprises: a radiation source (130) having a first optically active region and a second optically active region, wherein the first optically active region is designed to emit first electromagnetic radiation (500) and the second optically active region is designed to emit second electromagnetic radiation (510); and a first electro-optical component (110) and at least one second electro-optical component (120); wherein the first electro-optical component (110) and the at least one second electro-optical component (120) are arranged in relation to each other in the beam path of the radiation source (130) in such a way that the first electromagnetic radiation (500) is changed differently from the second electromagnetic radiation (510), such that the first electromagnetic radiation (500) differs from the second electromagnetic radiation (510) in at least one property.

Description

description

Optoelectronic component device, method for

Producing an optoelectronic component device and method for operating an optoelectronic

components device

In various embodiments, a

Optoelectronic component device, a method for producing an optoelectronic component device and a method for operating an optoelectronic component device provided.

A conventional organic optoelectronic component (FIG. 8), for example an organic light emitting diode (OLED), may comprise an anode and a

Have cathode with an organic functional layer system in between. The organic functional

Layer system may include one or more emitter shafts in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure of two or more each

Charge carrier pair generation layers · charge generating couple (CGL) and one or more electron block layers, also referred to as

Hole transport layer (s) (hole transport layer-HTL), and one or more hole block layers, also referred to as electron transport layer (s) ("ectron transport layer" - ETL), for directing the flow of current.

Organic-based optoelectronic components,

For example, organic light emitting diode, find increasingly widespread application in general lighting,

For example, as a large area lighting areas

(Area light source). OLED area light sources have hitherto been either transparent, semitransparent, diffuse or specular. Colloquially, an OLED is described as transparent or not transparent. The appearance of an OLED can, as far as known, not yet changed in the switched-on state and in the off state.

Also known are electrically switchable

Mirror layers: DE10031294A1, DE102007022090A1; and

electrically switchable diaphragms / filters: J. Jacobsen et al. , IBM System Journal 36 (1997) 457-463; B. Comiskey et al. Nature 394 (1998) 253-255; W0199803896A1; W0199841899A1;

WO2010064165A1; WO2009053890A2 and EP1601030A2.

In various embodiments, a

Optoelectronic component device, a method for producing an optoelectronic component device and a method for operating an optoelectronic component device provided, with which it is possible to change the appearance and the beam direction of OLED area light sources in the off state and / or in the on state. In various embodiments, a

Optoelectronic component device provided, the optoelectronic component device on eisend: a Strahlradeque1le with a first optically active region and a second optically active region, wherein the first optically active region is arranged to emit a first electromagnetic radiation and the second optically active region for emitting a second electromagnetic radiation is set up; and a first electro-optical component and at least one second electro-optical component; wherein the first electro-optical component and the at least one second electro-optical component are arranged in the beam path of the radiation source to each other such that the first electromagnetic radiation is changed in a different manner than the second electromagnetic radiation, so that the first

differs electromagnetic radiation in at least one property of the second electromagnetic radiation. In various embodiments, the radiation source can be designed as a light-emitting component, for example a light-emitting diode, an organic light-emitting diode, an (organic) light-emitting diode laterally coupled into an optical waveguide, also referred to as

be incoupled LED or rarely coupled OLED, a fluorescent tube, a filament lamp or a

Compact fluorescent lamp, in various embodiments, the optoelectronic component device can be designed as a mechanically flexible component, for example as a bendable OLED,

In one embodiment, the radiation source may be configured as a surface light source, wherein the

Surface normal of the first optically active region has a different orientation than the surface normal of the second optically active region. As an orientation of a surface normal, for example, the normal vector of the surface can be understood. A different orientation can already be given if the normal vectors of a first surface and a second surface have different signs. In one embodiment, the first optically active region may be formed parallel to the second optically active region, for example approximately plane-parallel. However, the first optically active region can also be opposite to the second optically active region in a form without being plane-parallel, for example tapering or diverging.

In one embodiment, the surface light source can be configured as an organic light-emitting diode. In one embodiment, the organic light-emitting diode may be transparent or translucent. In one embodiment, the first electro-optical

Component in the beam path of the first optically active

Be formed area. In one embodiment, the second electro-optical

Component in the beam path of the first optically active

Range and / or the second optically active region may be formed. In one embodiment, the second electro-optical

Component be formed between the first electro-optical device and the first optically active region.

In one embodiment, the first electro-optical component and / or the second electro-optical component can / can be formed on the first optically active region and / or the second optically active region.

In one embodiment, the first electro-optical component and / or the second electro-optical component can be integrated in the radiation source, for example

monolithic, for example as a structure in the

Layer cross-section of the radiation source. In one embodiment, the first electro-optical

Component and the second electro-optical component be designed such that the first electro-optical component at least a first electrically einsteilbare optical

Has property and the at least one second

Electro-optical device has at least a second electrically adjustable optical property.

In one embodiment, the first electro-optical component and the second electro-optical component

have at least one of the following electro-optical components or be configured as such: a mirror with electrically tunable reflectivity; a filter with electrically tunable absorption; and / or a diaphragm with electrically tunable transmission.

In one embodiment, the first electro-optical component and the second electro-optical component can have the same electro-optical component, that is to say an electro-optical component of the same type.

In one embodiment, the first electro-optical component and the second electro-optical component may have a different electro-optical component.

In one embodiment of the optoelectronic

Component device may be the opto-electronic

Component device further comprises a control device

wherein the first electro-optical component, the second electro-optical component and / or the

Radiation source with the control device are electrically connected / is.

In one embodiment, the control device may be designed such that the optoelectronic properties, for example optical properties, of the first

Electro-optic device, the at least one second electro-optical component and the radiation source are independently variable. optical

Properties can be, for example, the transmission,

Absorption and / or reflection of electromagnetic

Radiation as a function of a wavelength or a

Be wavelength range. Another optical property, for example, the intensity distribution in a

Wavelength spectrum of an emitted or absorbed electromagnetic radiation. In one embodiment, the control device may have a pulse modulator which is used to drive the first electro-optical component, the at least one second electro-optical component electro-optical component and / or the radiation source is set up.

In one embodiment, the pulse modulator as a

Pulse amplitude modulator, a pulse frequency modulator and / or a pulse width modulator be set up.

In one embodiment, the optoelectronic component can be designed such that the first electromagnetic radiation and the second electromagnetic radiation are approximately equal in at least one of the following properties: color tone; Saturation; or brightness.

In one embodiment, the radiation source can be configured such that the first electromagnetic radiation and the second electromagnetic radiation are different in at least one of the following properties:

Hue; Saturation; or brightness. In one embodiment, the first electro-optical

Component and the at least one second electro-optical device may be arranged such that the first optically active region and the second optically active region differ in at least one of the following properties: eflektivität; Absorption; or transmissivity.

In one embodiment, the radiation source can be configured such that the first electromagnetic radiation has approximately the same color location as the second

electromagnetic radiation .

In one embodiment, the first electro-optical

Component and the at least one second electro-optical component be structured, for example, surface, for example, for information reproduction, for example in the form of a pictogram, a symbol, an ideogram and / or a lettering. In one embodiment, the optoelectronic

Component device as a one-sided light-emitting

Mirror or unilaterally light-emitting window to be formed.

In various embodiments, a method for. Producing an optoelectronic component device, the method comprising: forming a radiation source having a first optically active region and a second optically active region, wherein the first optically active region is arranged to emit a first electromagnetic radiation and the second optically active region to emit a second electromagnetic radiation is set up; and forming a first electro-electric device and forming at least one second electro-optic device; wherein the first electro-optical component and the at least one second electro-optical component in the beam path of

Radiation source are formed to each other such that the first electromagnetic radiation is changed in a different manner than the second electromagnetic radiation, so that the first electromagnetic radiation in

at least one property of the second

electromagnetic radiation is different.

In one embodiment of the method, the

Radiation source can be formed as a surface light source, wherein the surface normal of the first optically active region may have a different orientation than the surface normal of the second optically active region.

In one embodiment of the method, the first optically active region can be parallel to the second optically active region

Be formed area, for example approximately

plane-parallel. In one embodiment of the method, the

Area light source as an organic light emitting diode

In one embodiment of the method, the organic light-emitting diode can be made transparent or translucent.

In one embodiment of the method, the first

electro-optical component can be formed in the beam path of the first optically active region.

In one embodiment of the method, the second

Electro-optical component in the beam path of the first optically active region and / or the second optically active

Be trained area.

In one embodiment of the method, the second

electro-optical device between the first

electro-optical component and the first optically active region are formed.

In one embodiment of the method, the first electro-optical component and / or the second one can / may be used

electro-optical component on the first optically active region and / or the second optically active region

be formed.

electro-optical component can be formed integrated in the radiation source, for example monolithic.

In one configuration of the method, the first electro-optical component and the at least one second electro-optical component may be formed such that the first electro-optical component has at least one first electrically adjustable optical property and the at least one second electro-optical component at least has a second electrically adjustable optical property. An electrically adjustable optical property can be, for example, the absorption, reflectivity, the

Transmission and / or affect the color appearance.

In one configuration of the method, the first electro-optical component and the second electro-optical component may have at least one of the following electro-optical components or be formed as such: a mirror with electrically tunable reflectivity; a filter with electrically tunable absorption, - and / or a diaphragm with electrically tunable

Transmission. By means of an electrically switchable aperture, the

Beam propagation of a beam path of a

Electromagnetic radiation are limited or interrupted, for example, for information reproduction. The reproduced information can be formed on the screen, for example as a pictogram, an ideogram and / or a logo, which is represented for example by means of colored particles. In addition or instead, the information can be displayed by means of the restricted or interrupted beam path. Alternatively or additionally, an electrically switchable diaphragm has a phosphor, wherein the phosphor can be introduced into the beam path by means of electrical switching or can be removed therefrom. The phosphor can become a

Wavelength conversion and the color appearance, i. the wavelength spectrum,

transmitted or reflected electromagnetic

Change radiation.

By means of an electrically switchable filter can

For example, a elleniangsbereich and / or a

Polarization provided by the spectrum

electromagnetic radiation are removed. This can For example, the color appearance can be changed.

By means of the change in the color appearance, for example by means of wavelength conversion or a

Filtering the electromagnetic radiation, can one

Information will be presented or another

physiological mood to be transported. In one embodiment of the method, the first

Electro-optical component and the second electro-optical component will be designed as identical electro-optical components. In one embodiment of the method, the first electro-optical component and the second electro-optical component may be designed as a different electro-optical component

Component be formed, for example as

different design with the same optical effect or different design.

In one embodiment of the method, the method may further comprise forming or providing a

Have control device, wherein the first electro-optical component, the second electro-optical component and / or the radiation source is electrically connected to the control device / is.

In one embodiment of the method, the

Control device may be formed or be such that the optoelectronic properties of the first

Electro-optic device, the at least one second electro-optical component and the radiation source are changed independently.

In one embodiment of the method, the

Control device have a pulse modulator or be formed. The pulse modulator is / is for driving the first electro-optical component, the at least one second electro-optical component and the

formed optoelectronic component. In one embodiment of the method, the pulse modulator can be designed as a pulse amplitude modulator, a pulse frequency modulator and / or a pulse width modulator. In one embodiment of the method, the

optoelectronic component be formed such that the first electromagnetic radiation and the second

electromagnetic radiation in at least one of

following properties are approximately equal: hue;

Saturation; or brightness.

In one embodiment of the method, the

electromagnetic radiation in at least one of

following characteristics are different: color;

Saturation; or brightness,

In one embodiment of the method, the first electro-optical component and the at least one second electro-optical component can be arranged such that the first optically active region and the second optically active region differ in at least one of the following properties: reflectivity; Absorption; or

Transmittivity.

In one embodiment of the method, the

Optoelectronic component are formed such that the first electromagnetic radiation has approximately the same color locus as the second electromagnetic radiation.

In one embodiment of the method, the first

electro-optical component and the at least one second electro-optical component are formed structured, for example, to reproduce information,

For example, in the form of a pictogram, an ideogram and / or a lettering.

In one embodiment of the method, the

Optoelectronic component device can be formed as a one-sided light-emitting mirror or one-sided light-emitting window.

In various embodiments, there is provided a method of operating an optoelectronic component device, the method comprising: driving an optoelectronic component device according to any of the above-described embodiments; the first one

Electro-optical component and the at least one second electro-optical component are driven differently such that the first electromagnetic radiation is changed in a different manner than the second e1ektromagnetische radiation, so that the first electromagnetic

Distinguish radiation in at least one property of the second electromagnetic radiation.

In one embodiment of the method, the first

Electro-optical device are driven such that the first optically active region at least partially emits a first electromagnetic radiation.

In one embodiment of the method, the first

Electro-optic device are driven such that the first optically active region is at least partially reflective, for example in terms

electromagnetic radiation incident on the first optically active region.

In one embodiment of the method, the first

Electro-optical device are driven such that the first optically active region at least partially for example, in terms of absorbing

electromagnetic radiation incident on the first optically active region. In one embodiment of the method, the first

Electro-optical device are driven such that the first optically active region is at least partially optically inactive, for example, in which a diaphragm is formed in front of the first optically active region.

In one embodiment of the method, the second electro-optical component can be controlled such that the second optically active region at least partially emits a second electromagnetic radiation.

In one embodiment of the method, the second electro-optical component can be controlled in such a way that the second optically active region is at least partially reflective, for example as regards

electromagnetic radiation incident on the two optically active regions.

In one embodiment of the method, the second electro-optical component can be controlled in such a way that the second optically active region is at least partially absorbent, for example as regards

electromagnetic radiation incident on the second optically active region. In one embodiment of the method, the second electro-optical component can be controlled in such a way that the second optically active region is at least partially optically inactive, for example by forming a diaphragm in front of the second optically active region.

In one embodiment of the method, the driving of the radiation source with the driving of the first electro-optical component and / or the second

be coupled electro-optical component.

In one embodiment of the method, the first

Electro-optical component and the radiation source are driven such that the first optically active region is at least partially transparent or translucent.

In one embodiment of the method, the second

Electro-optical component and the radiation source are driven such that the second optically active region is at least partially transparent or translucent.

In one embodiment of the method, the first

electro-optical device, the second electro-optical

Component and the radiation source are driven such that the first electro-optical component is at least partially reflective and the second electro-optical component and the second optically active region are at least partially transmissive or translucent.

In one embodiment of the method, the first

Electro-optical device and the second electro-optical device are driven such that the first optically active region -at least partially a first

emitted electromagnetic radiation and the second electro-optical component and the second optically active region are at least partially transmissive or translucent.

In one configuration of the method, the control signal of the optoelectronic component can be used as an input signal for the control of the first electro-optical component and / or of the at least one second electro-optical component

Be set up device.

In one embodiment of the method, the

Optoelectronic component device as one-sided operated light-emitting mirror or one-sided light-emitting window,

In one embodiment of the method, the pulse modulator can be a phase dimmer on iron or as such

be furnished, with a phase dimmer to one

Phase dimming a provided voltage or a provided stream is set up. The phase dimmer can be used for a phase angle control or a

Be set up phase control.

Embodiments of the invention are illustrated in the figures and are explained in more detail below. Show it

Figures la-d schematic cross-sectional views of a

Optoelectronic component device according to various embodiments;

FIG. 2 shows a schematic cross-sectional view of an optoelectronic component device according to various exemplary embodiments; Figure 3 is a schematic representation of a

Method for operating a

Optoelectronic component device according to various embodiments; FIGS. 4a, b are schematic representations of a method for operating an optoelectronic

Component device according to various embodiments; Figures 5a-d are schematic diagrams of a method for operating an optoelectronic

Component device according to various embodiments; Figures 6a-c are schematic representations of a method for operating an optoelectronic

Component device according to various

Embodiments; and

Figure 7 is a diagram of a method of operation

an optoelectronic

Component device according to various embodiments; and

Figure 8 is a conventional optoelectronic

Component In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration

Embodiments are shown in which the invention can be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. with reference to the

Orientation of the described figure (s) used. There

Components of embodiments in number

Being positioned in different orientations, the directional terminology is illustrative and not restrictive in any way. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the

Scope of the present invention is defined by the appended claims. In the context of this description, the terms

"connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

A radiation source may be a device emitting electromagnetic radiation. As electromagnetic

Radiation is X-rays, UV radiation, light,

Microwaves and electromagnetic radiation higher

To understand wavelength. In various embodiments, a radiation source, for example, a

be electromagnetic radiation emitting semiconductor device and / or as an electromagnetic

Radiation emitting diode, as an organic

electromagnetic radiation emitting diode, as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation

be formed emitting transistor. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the

electromagnetic radiation emitting device

For example, as a light emitting diode (light emitting diode, LED) as an organic light emitting diode (organic light emitting diode, OLED), as light emitting

Transistor or formed as an organic light-emitting transistor. The light emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of

Be provided light emitting devices,

For example, housed in a common housing. A radiation source, which is embodied as an optoelectronic component, can in various configurations, as an organic light emitting diode (OLED), an organic photovoltaic system, for example an organic solar cell, an organic sensor, an organic field effect transistor (OFET) and / or organic electronics

be educated. The organic field effect transistor may be an all-OFET in which all

Layers are organic. An organic, electronic

Component may have an organic functional layer structure, which is synonymously also referred to as organically functional layer structure. The organically functional layer structure may comprise or be formed from an organic substance or an organic substance mixture, which may be used, for example, to provide a

electromagnetic radiation from a supplied electric current or for providing an electric current from a provided electromagnetic

Radiation is set up.

In the context of this description, an optically active region of an optoelectronic component can be understood as the region of an optoelectronic component which absorbs electromagnetic radiation and from this a photocurrent or an electrical voltage

can form, or can emit electromagnetic radiation by means of an applied voltage to the optically active region. An optoelectronic component may, for example, two or more optically active regions

have, wherein the optically active regions, for example, optically active sides of a flat optoelectronic device may be, for example, two themselves

opposite optically active surface. One

However, an optoelectronic component having two or more optically active regions may also be referred to as a so-called stacked organic light emitting diode having two or more

be formed stacked OLED units. In the case of a stacked organic light-emitting diode, for example, a first OLED unit can be used as a first optically active one

Range and a second OLED unit may be formed as a second optically active region. An optoelectronic Component which has two flat, optically active sides, for example, can be transparent, for example, as a transparent organic light-emitting diode. However, the optically active region can also have a planar, optically active side and a flat, optically inactive

Side, for example, an organic light-emitting diode, which is set up as a top emitter or bottom emitter.

In various Ausges arrangements, the optoelectronic component device can be controlled by means of the phase angle, for example, be dimmed, for example by means of a phase control and / or a

Phase sequence control. The phase angle may be understood to mean the angular interval in one half cycle of the input voltage of the radiation source and / or electro-optical components, while no voltage is applied to the connected components by means of the dimmer. For example, the phase angle may be an amount in a range of

about 0 ° to about 180 °. A phase angle of about 0 ° can be understood as undimmed. One

Phase angle of about 180 ° can be understood as being maximally dimmed. Maximum dimming may be understood as being similar to an open switch electrically connected in series with the group of dimmed components.

The term "translucent" or "translucent layer" can be understood in various embodiments that a layer is permeable to light,

for example, for the light generated by the light-emitting component, for example one or more

Wavelength ranges, for example, for light in one

Wavelength range of the visible light (for example, at least in a partial region of the wavelength range of 380 nm to 780 nm). For example, the term "translucent layer" in various embodiments is to be understood to mean that substantially all of them are in one

Structure (for example, a layer) eingekoppe1te

Amount of light also from the structure (for example layer) is decoupled, whereby a part of the light can be scattered here

The term "transparent" or "transparent layer" can be understood in various embodiments that a layer is transparent to light

(For example, at least in a portion of the

Wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is coupled out of the structure (for example layer) substantially without scattering or light conversion.

1a-d show schematic cross-sectional views of an optoelectronic component device according to various exemplary embodiments.

Shown is a schematic cross-sectional view of an embodiment of an optoelectronic

Device device 100 with a first electro-optical component 110, a second electro-optical component 120 and an optoelectronic component 130.

The illustrated embodiment of the optoelectronic component 130 has a first electrode 104 on or above a carrier 102. On or above the first electrode 104, an organic functional layer structure 106 is formed. Over or on the organically functional

Layer structure 106 is a second electrode 108

educated . The second electrode 108 is electrically insulated from the first electrode 104 by means of electrical insulation 112. On or above the second electrode 108, a barrier thin film 118 is disposed such that the second electrode 108, the electrical insulation 112, and the organic functional layer structure 106 are surrounded by the barrier film 118, that is, in FIG

Connection of barrier thin layer 118 with the carrier 102 are included. The barrier film 118 can hermetically seal the trapped layers Environmental influences, such as oxygen, water,

for example, to seal moisture. On or above the barrier thin film 118, an adhesive layer 122 is disposed such that the adhesive layer 122 supports the adhesive layer 122

Barrier thin-film 118 surface and hermetically seals against harmful environmental influences. On or above the adhesive layer 122, a cover 124 is arranged. The cover 124 is, for example, adhered to the barrier thin film 118 with an adhesive 122, for example, laminated. The structures mentioned are described in more detail below.

The optoelectronic component 130 in the form of a

A light-emitting device, for example in the form of an organic light-emitting diode 130, may have a carrier 102. The carrier 102 may be used, for example, as a support for electronic elements or layers, for example

light-emitting elements, serve. For example, the carrier 102 may be glass, quartz, and / or a semiconductor material on or formed of iron. Furthermore, the carrier may comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may contain one or more polyolefins

(For example, high density polyethylene or low density polyethylene or polypropylene (PP)) or be formed therefrom. Furthermore, the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),

Polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN) or be formed therefrom. The carrier 102 may be one or more of the above

have mentioned materials. The carrier 102 may

be translucent or even transparent.

The carrier 102 may comprise or be formed of a metal, for example copper, silver, gold, platinum, iron, aluminum, chromium, molybdenum, for example one

Metal compound, for example steel. A carrier 102 comprising a metal or a

Metal compound may also be formed as a metal foil or a metal-coated foil. The carrier 102 may be translucent or even transparent. In a carrier 102, a metal

For example, the metal may be considered a thin one

Layer be transparent or translucent layer formed and / or the metal to be part of a mirror structure.

The carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or be formed in such a way. For example, a carrier 102 having a mechanically rigid region and a mechanically flexible region may be patterned, for example by having the rigid region and the flexible region of different thickness.

A mechanically flexible carrier 102 or the mechanically flexible region may, for example, be a foil

be formed, for example, a plastic film,

Metal foil or a thin glass.

In one embodiment, the carrier 102 may be referred to as

Waveguide for electromagnetic radiation of the

be formed optoelectronic component 130, for example, be transparent or translucent with respect to the provided electromagnetic radiation of the optoelectronic component 130th

On or above the carrier 102 may be in different

Embodiments optionally a barrier layer

be arranged (not shown), for example, on the side of the organic functional layer structure 106 and / or on the side of the organically functional

Layer structure 106 faces away. On or about your carrier 102 can in different

Embodiments optionally a barrier layer

be arranged (not shown). The barrier layer may comprise or be formed from one or more of the following materials:

Alumina, zinc oxide, zirconia, titania,

Hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide,

Silicon nitride, silicon oxynitride, indium tin oxide,

Indium zinc oxide, aluminum-doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and

Alloys thereof.

In various embodiments, the barrier layer can be supported by means of an atomic layer deposition (ALD) method, a molecular layer deposition method (MLD) and / or a chemical vapor deposition (CVD) method, for example a plasma

Gas phase deposition process (plasma enhanced chemical vapor deposition - PE-CVD) are formed.

In various embodiments, the barrier layer may have two or more identical and / or different layers or layers, for example next to one another and / or one above the other, for example as a barrier layer structure or a barrier stack, for example. Furthermore, the barrier layer in different

Embodiments have a layer thickness in a range of about 0.1 nm (one atomic layer) to about hr 1000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example one

Layer thickness of about 40 nm. In various embodiments, a cover (not shown) may be provided on or over the barrier layer and / or the barrier layer as a cover be formed, for example as a

Cavity glass encapsulation.

In various embodiments, the

Barrier layer be optional, for example by the

Carrier 102 is already hermetically sealed.

On or above the barrier layer (or, if the

Barrier layer is not present, on or above the carrier 102), an electrically active region of the

Be arranged light emitting device 130. The electrically active area may be considered the area of the

be understood light emitting device 130, in which an electric current for operation of the optoelectronic component, such as the light-emitting

Component 130 flows.

In various embodiments, the electrically active region may include a first electrode 104, a second electrode

Electrode 108 and an organically functional

Layer structure 106 have.

In various embodiments, the first electrode 104 (eg, in the form of a first electrode layer 110) may be deposited on or over the barrier layer (or, if the barrier layer is not present (shown) on or above the carrier 102).

The first electrode 104 (hereinafter also referred to as lower

Electrode 104) may be made of an electric

conductive material can be made or how

for example, from a metal or a conductive transparent oxide (TCO) or a layer stack of several layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive materials, for example

Metal oxides, such as zinc oxide, tin oxide, Cadmium oxide, titanium oxide, indium oxide, or indium-innate oxide (ITO). In addition to binary metal oxygen compounds such as ZnO, SnO ₂ , or In ₂ O ₃ , ternary metal oxygenates such as AlZnO, Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgO ₂ O ₄ , GalnO ₃ , Zn _{2 In} 2O _{5 are also included} or

In ₄ S ₃ 0 ₁₂ or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments.

Furthermore, the TCOs do not necessarily correspond to one

stoichiometric composition and may also be p-doped or n-doped.

In various embodiments, the first

Electrode 104 have a metal, for example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, and compounds, combinations or alloys of these materials.

In various embodiments, the first

Electrode 104 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is one

Silver layer deposited on an indium tin oxide (ITO) layer {Ag on ITO) or ITO-Ag-ITO multilayers. In various embodiments, the first

Electrode 104 provide one or more of the following materials, as an alternative or in addition to the materials mentioned above: networks of metallic nanowires and particles, such as Ag, Ag / Mg networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 104 may be electrically conductive polymers or transition metal oxides or electrically

having conductive transparent oxides. In various embodiments, the first

Electrode 104 and the carrier 102 may be translucent or transparent. For example, in the case that the first electrode 104 is formed of a metal, the first electrode 104 may have a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example one

Layer thickness of less than or equal to about 18 nm.

Further, for example, the first electrode 104 may have a layer thickness of greater than or equal to about 10 nm, for example, a layer thickness greater than or equal to about 15 nm. In various embodiments, the first electrode 104 may have a layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.

Further, in the case where the first electrode 104 is formed of a conductive transparent oxide {TCO}, the first electrode 104 may have a layer thickness, for example

in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range of about 75 nm to about 250 nm, for example one

Layer thickness in a range of about 100 nm to

about 150 nm.

Further, in the case where the first electrode 104 is made of, for example, a network of metallic nanowires, such as Ag, that may be combined with conductive polymers, a network of carbon nanotubes that may be combined with conductive polymers, or Graphene layers and composites is formed, the first electrode 104, for example, a

Layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm, For example, a layer thickness in a range of

about 40 nm to about 250 nm.

The first electrode 104 can be used as the anode, ie as

hole-injecting electrode may be formed or as

Cathode _» as an electron-injecting electrode.

The first electrode 104 may be a first electrical

Have terminal to which a first electrical potential (provided by a power source (not shown), for example, a power source or a voltage source) can be applied. Alternatively, the first electrical potential may be applied to the carrier 102, and may then be indirectly supplied to the first electrode 104 or may be. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

Furthermore, the electrically active region of the

light emitting device 130 an organic

functional layer structure 106, also referred to as an organic electroluminescent layer structure 106,

that on or above the first electrode 104

is or is applied.

The organic functional layer structure 106 may include a plurality of organic functional layer structures. In various exemplary embodiments, the organic electroluminescent layer structure 106 may also have more than two organically functional layer structures,

for example 3, 4, 5, 6, 7, 8, 9, 10, or even more.

In various embodiments, the other organic functional layer structures (not

shown) as one of the embodiments of the first

organically functional layered structures 106 may be formed. Several organic functional

Layer structures can be the same or different be formed, for example, an equal or

have different emitter material.

The organic functional layer structure 106 may be disposed on or above the first electrode 104. In the case of a plurality of organically functional layer structures, a second organically functional layer structure may be arranged above the first organically functional layer structure, wherein between the first organically functional layer structure

Layer Structure and the Second Organic Functional Layer Structure: A Charge Pair Generation Layer Structure (CGL)

is arranged. In embodiments in which more than two organic functional layer structures are provided, between each two organic functional

Layer structures may be provided a respective charge carrier pair generation layer structure.

As will be explained in more detail below, a

organic functional layer structure 106 each have one or more emitter layers, for example, with fluorescent and / or phosphorescent emitters, and one or more Lochleitungsschichten {not shown in Fig.l) (also referred to as Lochtransportschient (s)).

In various embodiments, alternatively or additionally, one or more electron conductive layers (also referred to as electron transport layer (s)) may be used.

be provided.

Examples of emitter materials used in the

light-emitting device 130 according to various

Examples of embodiments of the emitter layer (s) include organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2, 5-substituted poly-p-). phenylenevinylene) and metal complexes, for example

Iridium complexes such as blue phosphorescent FIrPic

(Bis (3,5-difluoro-2- (2-pyridyl) phenyl - (2-carboxypyridyl) iridium III), green phosphorescing Ir (ppy) 3 (tris (2-phenylpyridine) iridium III), red phosphorescent Ru ( DTB bpy) 3 * 2 (PF ₆₎ (tris [4, 4 '-di-tert-butyl- (2,2'} - bipyridine] ruthenium (III) complex), and blue fluorescent DPAVBi (4, 4-bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9, 10-bis [Ν, Ν-di- (p-tolyl) -amino] anthracene) and red fluorescent DCM2 (4-

Dicyanomethylene) -2-methyl-6-glolidolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, it is possible to use polymer emitters which can be deposited in particular by means of a wet-chemical method, for example a spin-coating method (also referred to as spin coating).

The emitter materials may be suitably embedded in one or more matrix material (s).

It should be noted that other suitable

Emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) of the

For example, light-emitting device 130 may be selected such that light-emitting device 100 emits white light. The emitter layer (s) can / can

several different colors (for example, blue and yellow or blue, green and red) emitting emitter materials

Alternatively, the emitter layer (s) may also be composed of several sub-layers, such as a blue-fluorescent emitter layer or blue-phosphorescent emitter layer, a green-phosphorescent emitter layer and a red-phosphorescent emitter layer. By mixing the different colors, the emission of light result in a white color impression. Alternatively, it can also be provided in the beam path through this

Layers generated primary emission to arrange a converter material that at least partially absorbs the primary radiation and emits a secondary radiation of different wavelength, so that from a (not yet white)

Primary radiation by the combination of primary radiation and secondary radiation gives a white color impression. The emitter materials of various organic functional layer structures can also be chosen such that the individual emitter materials emit light of different colors (for example blue, green or red or any other color combinations, for example any other complementary color combinations), but that, for example, the total light, the a total of all organic functional layer structures is emitted and emitted from the OLED to the outside, a light of predetermined color, such as white light, is.

An organic functional layer structure 106 may

generally one or more electroluminescent layers on iron. The one or more electroluminescent

Layers may or may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules"), or a combination of these materials

organic electroluminescent layer structure 106 comprises one or more electroluminescent layers embodied as a hole transport layer such that, for example, in the case of an OLED, an effective one

Locherinj tion in an electroluminescent layer or an electroluminescent region is made possible.

Alternatively, in various embodiments, the organically functional layered structure 106 may include one or more functional layers referred to as

Electron transport layer is executed or are, so that, for example, in an OLED an effective Elektroneninj tion is made possible in an electroluminescent layer or an electroluminescent region. As a material for the hole transport layer can

For example, tertiary amines, carbazole derivatives, conductive polyaniline or Polethylendioxythiophen be used. In various embodiments, the one or more electroluminescent layers may or may not be referred to as

be carried out electroluminescent layer. On or over the organic electroluminescent

Layer structure 106 or optionally on or over the one or more other organic

Functional layers, the second electrode 108th

(for example in the form of a second electrode layer 108) »has been described above.

In various embodiments, the second

Electrode 108 may be formed according to one of the embodiments of the first electrode 104, wherein the first electrode 104 and the second electrode 108 may be configured the same or different in one embodiment. In various embodiments, metals are particularly suitable. In various embodiments, the second

Electrode 108 (for example in the case of a metallic second electrode 108), for example have a layer thickness of less than or equal to about 2000 nm,

For example, have a layer thickness of less than or equal to about 1000 nm, for example, have a layer thickness of less than or equal to about 500 nm,

For example, have a layer thickness of less than or equal to about 200 nm, for example, have a layer thickness of less than or equal to about 100 nm

For example, have a layer thickness of less than or equal to about 50 nm, for example, a layer thickness of less than or equal to about 45 nm _» for example, a layer thickness of less than or equal to about 40 nm, for example, a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm, for example a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to approximately 20 nm,

For example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm

Embodiments of one or more of the materials and be formed with the respective layer thickness, as described above in connection with the first electrode 104.

In various embodiments, the first

Electrode 104 and the second electrode 108 are both formed translucent or transparent. Thus, the light-emitting device 130 shown in Fig.la can be described as a top and bottom emitter (in other words, as transparent

light emitting device 130).

The second electrode 108 can be used as anode, ie as

hole-injecting electrode may be formed or as

Cathode, so as an electron injecting electrode.

The second electrode 108 may have a second electrical connection to which a second electrical connection

Potential (which is different from the first one)

electric potential) provided by the

Energy source, can be applied. For example, the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V. A contact pad 114, 116 may be electrically and / or physically connected to an electrode 104, 108. However, a contact pad 114, 116 may also be configured as a portion of an electrode 104, 108, or a connecting slide.

The first electrode 104 may be electrically connected to a first electrical contact pad 116, to which a first electrical potential can be applied - provided by a power source (not shown), for example a current source or a voltage source. The first contact pad 116 may be formed on or above the carrier 102 in the geometric edge region of the optically active region of the light-emitting component 130, for example laterally next to the first electrode 10. Alternatively, the first electrical potential may be applied to the carrier 102 and then indirectly applied to the first electrode 104. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

In various embodiments, the second

Electrode 108 to be physically and electrically connected to a second contact pad 114, to which the second electrical potential can be applied - provided by a

Energy source (not shown), for example one

Power source or a voltage source. The second

Contact pad 114 may be formed in the geometric edge region of the optically active region of light-emitting component 130 on or above carrier 102, for example laterally next to first electrode 104.

The contact pads 114, 116 are by means of electrical

Isolations 112 are electrically isolated from the counter-pole electrodes 104, 108. In other words: the electrical

Isolations 112 may be configured such that a current flow between two electrically conductive regions, for example, between the first electrode 104 and the second electrode 108 or, for example, between the first Electrode 104 and the second contact pad 114 is prevented. The substance or the substance mixture of the electrical insulation can be, for example, a coating or a coating agent, for example a polymer and / or a lacquer. The lacquer may, for example, have a coating substance which can be applied in liquid or in powder form,

For example, have or be formed from a polyamide. The electrical insulation 112 can be applied or formed, for example, lithographically or by means of a printing process, for example, structured. The

Printing process, for example, an inkjet printing {Inkj et-Printing), a screen printing and / or a pad printing (pad-printing) have. In one embodiment, electrical isolation 112 may be optional, for example, in forming the

optoelectronic component 130 with a suitable mask process. The contact pads 114, 116 may be a substance or a substance mixture similar to the first substance or mixture of substances

Electrode 104 and / or the second electrode 108 or be formed therefrom, for example as a

Metal layer structure comprising at least one chromium layer and at least one aluminum layer, for example chromium-aluminum-chromium (Cr-Al-Cr); or molybdenum-aluminum-molybdenum (Mo-Al-Mo), silver-magnesium (Ag-Mg), aluminum.

The contact pads 114, 116 may, for example, a

Contact surface, a pin, a flexible printed circuit board, a clamp, a clamp or other electrical

Have connecting means or be formed.

On or above the second electrode 108 and thus on or above the electrically active region can optionally still a Verka beeting, for example in the form of a

Barrier thin film / thin film encapsulation 118 may be formed or be. In the context of this application, a "barrier thin film" or a "barrier thin film" 118 can be understood, for example, as a layer or layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and Oxygen, form. In other words, the barrier film 118 is formed to be resistant to OLED damaging materials such as

Water, oxygen or solvents can not be penetrated or at most at very low levels,

-6. 2,

for example, less than 10 g / m / d.

In accordance with one embodiment, the barrier film 118 may be formed as a single layer (in other words, as

Single layer) may be formed. According to an alternative embodiment, the barrier thin film 118 may comprise a plurality of sublayers formed on each other. In other words, according to one embodiment, the

Barrier thin film 118 as a stack of layers (stack)

be educated. The barrier film 118 or one or more sublayers of the barrier film 118 may be formed, for example, by a suitable deposition process, e.g. by means of a

Atomic Layer Deposition (ALD) method according to an embodiment, e.g. a Plasma Enhanced Atomic Layer Deposition (PEALD) or a plasmaless

Atomic deposition method (Plasmaless Atomic Layer

Deposition (PLALD)), or by means of a chemical

Chemical Vapor Deposition (CVD) according to another embodiment, e.g. one

plasma enhanced chemical vapor deposition (PECVD) or plasmaless vapor deposition (plasma-less

Chemical Vapor Deposition (PLCVD)), or alternatively by other suitable deposition methods. By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region.

According to one embodiment, in a

Barrier thin film 118 having multiple sublayers, all sublayers formed by an atomic layer deposition process. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

According to an alternative embodiment, in a

A barrier film 118 comprising a plurality of sub-layers, one or more sub-layers of the barrier film 118 by means of a different deposition than one method

Atomic layer deposition processes are deposited,

for example by means of a gas phase separation process. The barrier film 118 may, according to one embodiment, have a film thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a film thickness of about 10 nm to about 100 nm according to a

Embodiment, for example, about 40 nm according to an embodiment.

According to an embodiment in which the barrier thin layer 118 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another

Design, the individual sub-layers of

Barrier thin layer 118 have different layer thicknesses. In other words, at least one of

Partial layers have a different layer thickness on iron than one or more other of the partial layers.

The barrier thin-film layer 118 or the individual partial layers of the barrier thin-film layer 118 may, according to one embodiment, be formed as a translucent or transparent layer. In other words, the barrier film 118 (or the individual sublayers of the barrier film 118) may be made of a translucent or transparent material (or combination of materials that is translucent or transparent).

According to one embodiment, the barrier thin layer 118 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the

Barrier film 118 comprising or being formed from one of the following materials: alumina, zinc oxide, zirconia, titania, haf ium oxide, tantalum oxide,

Lanthanum oxide, silicon oxide, silicon nitride,

Silicon oxynitride, SiC _x Ny, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and

Alloys thereof. In various embodiments, the barrier film layer 118 or (in the case of a

Layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 118 comprise one or more high refractive index materials, in other words one or more high refractive index materials, for example, having a refractive index of at least 2. It should also be noted that in various

Embodiments can be completely dispensed with a barrier thin film 118. In such an embodiment, the optoelectronic component device can, for example, have a further encapsulation structure, as a result of which a barrier thin layer 118 can become optional, for example a cover, for example a cavity glass encapsulation or metallic encapsulation.

In various embodiments, an adhesive 122 and / or on or above the barrier thin film 118 may be used

Protective varnish 122 may be provided, by means of which, for example, a cover 124 (for example a glass cover 12, a metal foil cover 124, a sealed plastic film cover 124} is secured to the barrier film 118, for example glued. In

various embodiments, the optically

translucent layer of adhesive 122 and / or

Protective varnish 122 has a layer thickness of greater than 1 μπι

have, for example, a layer thickness of several μν. In various embodiments, the adhesive may include or be a lamination adhesive.

In the layer of the adhesive (also referred to as

Klebstoffschiebt) can in different

Embodiments still light scattering particles

be embedded, which can lead to a further improvement of the color angle distortion and the Auskoppeleffizienz. In various embodiments, as

light-scattering particles, for example dielectric

Such as metal oxides such as silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga20 _x ), alumina, or provided titanium oxide. Other particles may be suitable, provided that they have a

Have refractive index, which is different from the effective refractive index of the matrix of the translucent layer structure, for example, air bubbles, acrylate, or glass bubbles. Furthermore, for example, metallic nanoparticles,

Metals such as gold, silver, iron nanoparticles, or

may be provided as light-scattering particles. In various embodiments, between the second electrode 108 and the layer of adhesive 122 and / or resist 122, an electrically insulating layer (not shown) may be applied or be, for example, SiN, for example, with a layer thickness in a range of about 300 nm to about 1.5 μτη,

for example, with a layer thickness in a range of about 500 nm to about 1 μιπ to electrically unstable Protect materials, for example during a

wet-chemical process,

In various embodiments, the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the refractive index

Cover 124. Such an adhesive may be, for example, a low-refractive adhesive such as a

Acrylate having a refractive index of about 1.3. In one embodiment, for example, an adhesive may be a high refractive index adhesive

having refractive index non-diffusing particles and having an average refractive index approximately equal to the average refractive index of the organically functional layered structure, for example in a range of about 1.7 to about 2.0. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence. It should also be noted that in various

Embodiments can be completely dispensed with an adhesive 122, for example in embodiments in which the cover 124, for example made of glass, are applied to the barrier thin film 118 by means of, for example, plasma spraying.

On or above the electrically active region may optionally be arranged a getter layer (not shown) such that the Gette layer is the electrically active

Hermetically sealed with respect to harmful environmental influences, for example, reduces the diffusion rate of water and / or oxygen to the barrier thin film 118 and / or the electrically active area down. The getter layer can be structured, for example in an op isch inactive edge region of the optoelectronic component. In various embodiments, the getter layer may be translucent, transparent or opaque and have a layer thickness of greater than about 1 μτ, for example, a layer thickness of several μπι. In

According to various embodiments, the matrix of

Getter layer have a lamination adhesive.

Furthermore, in various embodiments

additionally one or more antireflection coatings

(for example, combined with the barrier thin film 118) may be provided in the light-emitting device 130.

In various embodiments, the / may

Cover 124 and / or the adhesive 122 have a refractive index (for example, at a wavelength of 633 nra) of 1.55.

In one embodiment, the cover 124, for example of glass, for example by means of a frit bonding {glass frit bonding / glass soldering / seal glass bonding) applied by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic device 100 with the barrier film 108 become. In various embodiments, a

Electro-optical component 110, 120 may be formed as a colored, matte, silver and / or diffuse electrically switchable structure. In various embodiments, a

Electro-optical device 110, 120 as an electrically switchable mirror with tunable Ref lectivity

be furnished. In various embodiments, the immense reflectivity can be carried out by electrochromic, gasochromic or thermochromic.

An electrically switchable mirror layer with tunable Ref lectivity can be designed as they for example, described in DE10031294A1;

DE102007Q22090A1.

An electrically switchable aperture with tunable

Transmission or an electrically switchable filter with tuneable absorption can be designed as described, for example, in: J. Jacobsen et al. , IBM System Journal 36 (1997) 457-463; B. Comiskey et al.

Nature 394 (1998) 253-255; WO199803896A1; W0199841899A1;

WO2010064165A1; WO2009053890A2; EP1601030A2.

In various embodiments, ei

Electro-optical component 110, 120 may be formed as a film and glued on or over the optoelectronic device 130, for example with an adhesive according to one of the embodiments shown above. In one

Embodiment, the adhesive which is used for adhering an electro-optical component 110, 120, also be arranged as Auskoppelschicht, as will be described in more detail below.

The electro-optical component 110, 120 may be such

be formed that by means of an application of a

Control signal to the electro-optical device 110, 120, the optical properties of the electro-optical device 110, 120 are changed, for example, the transmission, absorption and / or reflection of electromagnetic radiation by / in / from the electro-optical device 110, 120. A control signal, for example the change of a voltage applied to the electro-optical component 110, 120

Voltage or a change in current through the

be electro-optical component 110, 120 (see Fig.5 and

Fig.6). For example, the optical characteristics can be changed in a range of 0% (no change) to 100% (full change). In various embodiments, a

electro-optical device 110, 120 may be formed such that the optical properties of the electro-optical device abruptly, i. instantaneous, unsteady; change with the application of a control signal to the electro-optical component.

In various embodiments, a

Electro-optical device 110, 120 may be formed so that the optical properties of the electro-optical device continuously, i. fluent, steady; with the

Applying a control signal to the electro-optical component change.

In various embodiments, this will be

optoelectronic device 130 independent of the

electro-optical components 110, 120 controlled,

For example, the optoelectronic device is operated in a DC mode. Thus, given a given emission ratio of the optoelectronic component 130, the transmissivity and reflectivity of the optoelectronic component 130 are given discreetly, i. there are

various discrete settings possible.

In various embodiments, a static outcoupling layer 126, 128 and / or a self-regulating one can

Decoupling layer 126, 128 in the optoelectronic

Device device 100 may be provided (shown in Fig.lb-d). An outcoupling layer 126, 128 may be formed, for example, as an external outcoupling foil 126, 128 on or above the carrier 102 or as an internal auxucial splint (not shown) in the layer cross section of the optoelectronic component 130.

The decoupling layer 126, 128 may comprise a matrix and scattering centers distributed therein, wherein the

Layer cross-section - average refractive index (average Refractive index) of the outcoupling layer 126, 128 is smaller or larger than the average refractive index of the layer from which the electromagnetic radiation is provided. The decoupling layer 126, 128 and / or the scattering centers can, for example, according to one of the embodiments of

Adhesive layer 122 may be configured.

A self-regulating decoupling layer 126, 128 can be a matrix or scattering centers of a substance or a Stoffgeraisch

whose refractive index changes with temperature such that the refractive index difference of the

Scattering centers to the matrix at a first operating temperature of the optoelectronic component device is less than 0.05 and at a second operating temperature of

Refractive index difference is greater than 0.05. In one

Embodiment, the scattering centers and / or the matrix may comprise or from a thermotropic substance

be formed. Under an external coupling devices can

be understood, in which decouples light from the substrate in radiated light. Such a device may, for example, a film with scattering particles or a

Surface structuring, for example, microlenses, be. The film can for example be applied to the substrate outside. Further possibilities may be a direct structuring of the substrate outside or the introduction of scattering particles into the substrate, for example into a glass substrate.

In various embodiments, a static outcoupling layer 126, 128 and / or a self-regulating

Decoupling layer 126, 128 may be provided in the beam path of the light emitted by the optoelectronic component on one of the electro-optical components 110, 120 (Fig.lb). In various embodiments, a static outcoupling layer 126, 128 and / or a self-regulating

AuskoppeIschlcht 126, 128 in the beam path of the of

Optoelectronic component emitted light between one of the electro-optical components 110, 120 and the optoelectronic component 130 may be provided (Fig. Lc).

In various exemplary embodiments, one or more static decoupling layer (s) 126, 128 and / or one or more self-regulating decoupling layer (s) 126, 128 may be arranged in the beam path of the light emitted by the optoelectronic component, in accordance with FIGS

Embodiments of Fig. Lb and Fig. Lc. One

Exemplary embodiment of a multiplicity of possible combinations of a plurality of outcoupling layers 126, 128 with regard to a first electro-optical component 110 and a second electro-optical component 120 is shown in FIG.

In addition, in various embodiments, or instead of the outcoupling layer (s) 126, 128, optically

be provided functional layers, for example

Litter layers, effect foils, glitter foils, color foils, transparent foils or non-transparent / opaque foils with, for example, image information, for example one

Pictogram, ideogram or scrapbook; electrochromic

Layers, photochromic layers and / or a display.

In various embodiments, the

Optoelectronic component generally be a light-emitting component, such as a light emitting diode, an organic light emitting diode, a laterally into the carrier 102 light einkoppelnde (organic) light emitting diode, also referred to as page-coupled LED / OLED, a fluorescent tube, a Glühf denlampe, a compact fluorescent lamp.

In various embodiments, the

Optoelectronic component device as a mechanical be formed flexible component, for example as a bendable OLED.

2 shows a schematic cross-sectional view of an optoelectronic component device according to various embodiments according to one of the embodiments of FIGS

Descriptions of Fig.la to Fig.ld and a controller 202nd

The control unit 202 can be electrically connected to the first electro-optical component 110 by means of electrical connections 206 and drive it.

The control unit 202 can be electrically connected to the second electro-optical component 120 by means of electrical connections 208 and drive it.

The control unit 202 can be connected to the optoelectronic by means of electrical connections 204 and the ontaktpads 114, 116

Component 130 to be electrically connected and this

drive.

The controller 202 may include a pulse modulator (not

shown) and different voltage waveforms and / or current waveforms to the with the controller 202nd

connected electrical components 110, 120, 130th

provide.

The control unit 202 may be configured such that the power supply connected to the control unit 102

Components 110, 120, 130 controlled independently of each other, that is energized, can be.

The driving of the electro-optical components 110, 120 can take place by means of a voltage applied to the electro-optical components 110, 120 or an applied current. The optical properties of the electro-optical components 110, 120 can by means of a change in the pulse width or the pulse frequency of the voltage pulses, for example by means of a Pulse width modulation (PWM), a pulse frequency modulation (PFM); and / or by means of a change of the control voltage, for example by means of a pulse amplitude modulation (PAM) or a DC modulation (DCM) (direct current

Modulation), for example in the form of a pulse code modulation (PCM). A PWM and PFM Ans euerung can be used, for example, if the electro-optical components 110, 120 are formed such that can be switched only between two states,

for example, only between an on state and an off state. A PAM and DC drive can be used, for example, if the electro-optical components 110, 120 are designed such that the optical properties by means of the magnitude and / or the current direction of

applied voltage can be adjusted.

3 shows a schematic representation of a method for operating an optoelectronic component device according to various exemplary embodiments.

Shown are appearances optoelectronic

Component devices with regard to the light emission in the case of a light-emitting optoelectronic component for a first optoelectronic component device 302 with only a first electro-optical component 110, for a second optoelectronic component device 304 with an optoelectronic component 130 between a first electro-optical component 110 and a second one

electro-optical device 120 (according to one embodiment of the description of Fig. 1); for a third

optoelectronic component device 306 with only a second electro-optical component 120; and for a fourth (conventional) optoelectronic component device without electro-optical components.

For the description, a simplified representation is shown with a same optoelectronic component 130 for the four illustrated optoelectronic component devices 302, 304, 306, 308. The optoelectronic

In this illustrated case, device 130 is configured as a transparent organic light-emitting diode 130 that can emit light up and down. The optically active surface which emits light upwards may, for example, be referred to as the first optically active region and the surface which emits light downwards may be referred to as the second optically active region.

In the following case consideration, a

Electro-optical device be optically inactivating and prevent emission from an optically active region (shown by means of the arrow 322), for example, in which the electro-optical device light, which is emitted from an optically active region, reflects, reflects, filters and / or absorbed. An electro-optical device is optically transparent if it does not change the light emitted by an optically active region - represented by the arrow 324. For the case consideration, the appearance of the optoelectronic

Component device shown, for example in

Case considerations in which an electro-optical device is optically inactivated, this in the

However, optoelectronic component device is not provided.

In a first case 310, the first is electro-optical

Component 110 optically inactivating and the second

electro-optical component 120 is switched to be transmissive. In the first case 310, in the first optoelectronic component device 302 and the second optoelectronic component device 304, the emission of light upward is inhibited, so that light is emitted downwardly only from the second optically active region. The third

Optoelectronic device device 306 and fourth optoelectronic device device 308 emit light up and down. In a second case 320, the first electro-optical component 110 and the second electro-optical component 120 are connected in a transmissive manner. In the second case 320

emit all considered optoelectronic

Construction device 302, 304, 306, 308 light up and down.

In a third case 330, the first electro-optical component 110 and the second electro-optical component 120 are optically inactivated. In the third case 330, the first optoelectronic component device 302 emits light only down, the second optoelectronic

Component device 304 no light, the third

Optoelectronic component device 306 light only up and the fourth optoelectronic component device 308 light up and down.

In a fourth case 340, the first is electro-optic

Component 110 transmissive and the second electro-optical component 120 optically inactivating switched. In the fourth case 340, in the third optoelectronic component device 306 and the second optoelectronic component device 304, the emission of light downward is inhibited, so that light is emitted upward only from the first optically active region. The first optoelectronic component device 302 and the fourth optoelectronic component device 308 emit light up and down. From the case consideration 310, 320, 330, 340 it can be seen that it is with the second optoelectronic

Component device 304 is possible, a

Optoelectronic device device to switch optically inactive, although the optoelectronic device is optically active.

4a, b show schematic representations

optoelectronic component devices in one Method for operating an optoelectronics

Component device.

In various exemplary embodiments, the first electro-optical component 110 and / or the second

electro-optical device 120 as an electrical

tunable mirror, an electrically tunable

Aperture, or an electrically tunable filter

be educated.

A transparent optoelectronic component 130 may, for example, have a transparency of approximately 50% due to transparent electrical contacts and the organically functional layer structure (see FIG. 1 a). Depending on the design of the electro-optical

Component, the appearance of the optoelectronic device can be changed, for example, whether an optically inactivating switched optoelectronic device 110, 120 should appear as a mirror or a glossy or matte colored surface. When considering a

Electro-optic device by a transparent

Optoelectronic device may have a different appearance on the inside than the outside of the

electro-optic device. The outside and inside can appear different, even with isotropic

Configuration of the electro-optical component. Cause of this can be when looking at the inside

For example, scattering layers and / or coupling-out layers in the beam path of the observer, for example in the optoelectronic component. As a result, depending on the control of the electro-optical components and

Viewing direction different appearances for an optoelectronic component device can be realized.

By way of illustration, for the false positives 310, 320, 330, 340, the appearances of the optoelectronic component device 302, 304, 306, 308 for a Viewing the first electro-optical component 110 (FIG. 4a) and looking at the second one

electro-optical component 120 (Fig.4b) shown. In the first case 310, the outside of the first electro-optical component 110 is visible at a glance 410 in the direction of the first electro-optical component 110 (FIG. 4 a) in the case of the first optoelectronic component device 302 and the lateral optoelectronic component device 304. The third optoelectronic component device 306 and the fourth optoelectronic component device 308 appear transparent.

In the first case 310, the inside of the first electro-optical component 110 is visible in the case of the first optoelectronic component device 302 and the second optoelectronic component device 304 in the direction of the second electro-optical component 120 (FIG. The third optoelectronic component device 306 and the fourth optoelectronic component device 308 appear transparent.

In the second case 320, at a glance, 410 in

Direction to the first electro-optical device 110th

(Fig.4a) and at a glance 420 in the direction of the second electro-optical component 120 (Fig.4b) the

optoelectronic component devices 302, 30, 306, 308 transparent. In the third case 330, the outside of the first electro-optical component 110 is visible at a glance 410 in the direction of the first electro-optical component 110 (FIG. A) in the first optoelectronic component device 302 and the second optoelectronic component device 304. At the third optoelectronic

Device 306, the inside of the second electro-optical device 120 is visible and the fourth Optoelectronic device device 308 appears transparent.

In the third case 330, the outside of the second electro-optical component 120 is visible in the case of the second optoelectronic component device 304 and the third optoelectronic component device 306 in the direction of the second electro-optical component 120 (FIG. At the first optoelectronic

Device device 302, the inside of the first electro-optic device 120 is visible and the fourth optoelectronic device device 308 appears transparent. In the fourth case 340, the interior of the second electro-optical component 120 is visible in the case of the second optoelectronic component device 304 and the third optoelectronic component device 306 in the direction of the first electro-optical component 120 (FIG. The first optoelectronic component device 302 and the fourth optoelectronic component device 308 appear transparent.

In the fourth case 340, the outer side of the second electro-optical component 120 is visible in the case of the second optoelectronic component device 304 and the third optoelectronic component device 306 in the direction of the second electro-optical component 110 {FIG. The first optoelectronic component device 302 and the fourth optoelectronic component device 308 appear transparent.

From the case consideration 310, 320, 330, 340 of Fig. 4a and Fig. B it can be seen that it with the second

Optoelectronic component device 304 is possible that the optoelectronic component device in

Depending on the viewing direction and the control of the electro-optical components 110, 120 more different With the embodiment of the second optoelectronic component devices 100, 304, the appearance of an optoelectronic component devices on five different manifestations on iron - each in the form of the configuration of the inside and the outside of the first electro-optical Component 110 and the second electro-optical component 120 and transparent. This can be realized because an electro-optical device according to the embodiments shown in Fig.la can have optical properties that are dependent on the

Viewing direction. In an optoelectronic component devices 302, 306 with only one electro-optical component and a transparent optoelectronic component with

asymmetric emission (see Figure 7) does not adjust the transparency of the optoelectronic device

possible.

5 a - c show schematic representations of a method for operating an optoelectronic component device according to various exemplary embodiments.

To illustrate the control of the optoelectronic component devices, the control is described using the example of an optoelectronic component 130 which emits a first electromagnetic radiation (indicated by the arrow 500) and a second electromagnetic radiation (indicated by the arrow 510) to different sides of the optoelectronic component 130 , FIG. 5 a shows an optoelectronic component device 100 according to one embodiment of the descriptions of FIGS. 1 and 2. While the optoelectronic component 130 emits light, the first electro-optical component can / can 110 and / or the second electro-optical component 120 are driven pulsed (see Figure 2). The pulsed

Control can, for example, as a pulse width modulation (PWM), a pulse frequency modulation (PFM) a

Pulse amplitude modulation (PAM) and / or a

Pulse code modulation (PCM). Due to the inertia of the human eye, mixed scenarios of the case considerations 310, 320, 330, 340 of the second optoelectronic can be used by means of the pulsed activation

Device device 30, 100 of the description of

4a, b realized.

To illustrate the principle of action of the pulsed drive, the effect of a pulsed drive of the first electro-optical component 110 is shown below. Only for the sake of simplification

Illustration shows the optoelectronic

Component device, the following properties: The first electromagnetic radiation 500 and the second

electromagnetic radiation 510 have identical

Features, for example, the same

Brightness, the same hue and the same saturation. That 50% of the electromagnetic radiation emitted by the optoelectronic component 130 is emitted in the direction of the arrow 500 and the other 50% in the direction of the arrow 510. The optoelectronic component 130 is arranged between the first electro-optical component 110 and the second electro-optical component 120. The first electro-optical component 110 and the second electro-optical component 120 are considered to be electrically tunable

Mirror formed (see description Fig. La) and the same design. The first electro-optical component 110 may therefore also be referred to below as the first electro-optical mirror 110 and the second electro-optical component 120 subsequently also as the second electro-optical mirror 120. An optically inactivating switched

electro-optical mirror reflects the electromagnetic radiation 100% in the opposite direction - For example, in the first case 310 in Figure 3, the light emitted to the top (500) is redirected 100% down (510), so that instead of originally 50% of the total

emitted electromagnetic radiation (500 + 510) is now emitted 100% down.

The proportion of the electromagnetic upwards and downwards emitted by the optoelectronic component 130

Radiation can be adjusted by means of the control of the electro-optical components 110, 120 independently of the control of the optoelectronic component 130.

Fig.5b-d show different controls of a

electro-optical device 110, 120. Shown is the transmission 502 as a function of the time 504 of a

electro-optical component 110, 120. The duty cycle (Mux) can be understood as the inverse ratio of the transmission time 512, within which an electro-optical mirror 110, 120 is transmissive or a high one

Transmission coefficient 502, with respect to the time of a period 506 of the drive. The switching of the electro-optical device between the high-transmission state and the low-transmission state can be realized, for example, by turning on or off the electro-optical device. For this it is assumed that the electro-optical component

instantaneously following the electrical pulses at power up or power off. Furthermore, it is assumed that the eye of a viewer perceives no switching operations and otherwise no electrical or optical losses occur.

For the subsequent consideration of the drive (FIGS. 5 b-d), it is assumed that the second electro-optical component 120 is 100% transparent and the first electro-optical component 110 is pulsed.

Shown in Fig.5b and Fig.5c are two different controls, with which a duty cycle of 2 realized becomes. Such a controlled electro-optical component 110, 120 is as long as reflective as well as transmissive on average over time, ie is 50% transparent or translucent and 50% reflective. If only the first electro-optical component 110 is driven in such a way while the second electro-optical component 120 is transmitting {first case 310 - see FIG

optoelectronic component device 100 emitted 25% of the total electromagnetic radiation up and 75% down. The emission ratio of

Optoelectronic component device 100 with respect to the first optically active region is thus 1/3.

Over the periods 506, 508, 510 of an electro-optical

Mirror 110, 120 can on average over time

Reflectance of electro-optical mirror 110, 120

to be changed. The period 506, 508 can be changed, for example, by means of pulse frequency modulation. The duty cycle can, for example, by means of a

Pulse width modulation can be set (shown in

Fig.5d}. Such a controlled electro-optical component 110, 120 has a reflected portion of electromagnetic radiation of, for example, 75%. This will be a

Tasting ratio of 4 allows. The radiation ratio of the optoelectronic component device 100 with respect to the first optically active region is thus 1/8.

In a transmission of the first electro-optical mirror 110 in the time average of 100% that is

Emission ratio of the optoelectronic

Device device 100 with respect to the first optically active region 1 (in a transparent second

electro-optical component 120; third case 330 in Fig.3). In other words, the electromagnetic radiation of the optoelectronic component device is emitted in such a way as it is emitted by the optoelectronic component, that is to say 50% upwards and 50% downwards in the above-described assumption. With a transmission of the first electro-optical mirror 110 on a time average of 0%, upwards 0% of the total electromagnetic radiation is emitted and downwards 100%. The emission ratio of the optoelectronic component device 100 with respect to the first optically active region is 0 (first case 310 in FIG. 3).

In the case of an optoelectronic component device 302, 306 with only one electro-optical component 110, 120, the range of the possible emission directions depends on the fundamental radiation of the optoelectronic component 130, for example in a range between 0% and 70%.

with respect to the first optically active region. On the other hand, with an optoelectronic component device 100, 304 with two or more electro-optical components 110, 120 independent of the A control of the optoelectronic

Component, the radiation for electromagnetic radiation in both directions 500, 510 are varied in a range of 0% to 100%.

6a-c show schematic representations of a method for operating an optoelectronic component device according to various exemplary embodiments.

By means of the actuation of the electro-optical components 110, 120, the optoelectronic properties of this electro-optical component 110, 120 can be adjusted, for example the reflectivity, the transmission and / or the absorption of electromagnetic radiation at this electro-optical component 110, 120.

An electro-optic device 110, 120 can in

According to various exemplary embodiments, the (normalized) reflectivity 604 is a function of a (normalized) voltage 602 applied to the electro-optical component 110, 120-illustrated in FIG. 6 a. In one embodiment, the Electro-optical device 110, 120 may be formed such that the reflection of electromagnetic radiation to the electro-optical device 110, 120 linearly with a

applied voltage increases, for example at a

Driving the electro-optical component 110, 120 with a direct current, i. have a direct current modulation (DCM). The illustrated

unctional relationship between reflectivity and

applied voltage can, for example, for a

Pulse amplitude modulation can be used (not

shown).

An electro-optical component 110, 120 can be used in

Different embodiments may be designed and controlled such that the reflectivity 604

electromagnetic radiation at the electro-optical

Component 110, 120 can be adjusted by means of a pulse width modulation - shown in Figure 6b. Shown are a first pulse width 608 and a second pulse width 610. By means of different duty cycles 608, 610 (Mux) on the electro-optical components 110, 120 can in

temporal means different reflectivities in the electro-optical components 110, 120 are realized, for example, a reflectivity of 40% by means of the first pulse width 608 and a reflectivity of 60% by means of the second pulse width 610th

An electro-optical component 110, 120 can in

electromagnetic radiation at the electro-optical

Device 110, 120 can be adjusted by means of a pulse frequency modulation - shown in Fig.6c. Shown are a first pulse rate 612 and a second pulse width 614, whereby on average over time

Reflections could be realized. In various embodiments, depending on the configuration of the electro-optical component 110, 120, the control of the electro-optical component 110, 120 may have a mixed form of the abovementioned modulations, for example in the form of pulse code modulation.

The electro-optical components 110, 120 can be designed and controlled in such a way that the transmission, reflection and absorption of electromagnetic radiation by / on / in the electro-optical components 110, 120 of an optoelectronic component device 100 according to one of the illustrated functional relationships of the embodiments of the description of FIG . 5a-d and 6a-c. The ratio of the proportions of electromagnetic radiation emitted by the first optically active region and the second optically active region can be determined by means of

Embodiment of the optoelectronic component 130

be set, for example, by a coupling-out layer is formed in the beam path of the first optically active region and not in the beam path of the second optically active region. As a result, the optoelectronic component can have optical properties which are dependent on the viewing direction, for example a direction-dependent transmission or reflection. Such directional optical properties may be referred to as an asymmetric emission ratio. An asymmetric emission ratio may, for example, have an emission of 60% of the total electromagnetic radiation from the second optically active region and 40% from the first optically active region.

7 shows a diagram of a method for operating an optoelectronic component device according to various exemplary embodiments.

Shown is the emission ratio 702 as a function of the mirror pulse ratio 704 for optoelectronic Device devices 100 with optoelectronic

Devices 130 different AbstrahlVerhältnissen 706 (asymmetric emission). The functional relationship of the radiation ratio 702 of the optoelectronic component device 100 is characterized in the selected representation by a discontinuity of the derivative for a mirror pulse ratio 704 of FIG. In the diagram shown is only ever one

Electro-optical component driven pulsed (see Figure 5 and Figure 6), while the other electro-optical device is transparent. It can be seen that in an optoelectronic

Device device with two electro-optic components, a change in the radiation characteristic of the optoelectronic component in a range of about 0% to about 100% is possible is. Furthermore, when changing the

Mirror pulse ratio 704 at constant

Emission ratio 702, the transparency of the optoelectronic component to be changed, which corresponds approximately to a change of the fundamental radiation 706. The following is an example of the calculations of some of the data points shown:

In an optoelectronic component 130, in which 50% of the total electromagnetic radiation is emitted upwards and 50% downwards (see above), this is

Abstrahlverhältnis of the optoelectronic component 130 with respect to the second optically active region: 1.00 / 1. In an optoelectronic component 130 in which 60% of the total electromagnetic radiation is emitted downwards and 40% upwards, the emission ratio of the optoelectronic component 130 with respect to the second optically active region is 1.50 / 1. In the optoelectronic component device 100 with an emission ratio of the optoelectronic

Device 130 of 1.00 / 1 and a drive (PWM, PFM, PAM, DCM) of the electro-optic devices 110, 120, in which the first electro-optical device 110 is 100% transparent and the second electro-optical device to 60%

is transparent, results in a mirror pulse ratio of 0.6. This will be 64% of the total electromagnetic

Emitted radiation upwards and emitted 36% down, resulting in a radiation ratio of the optoelectronic component device 100 of 0.5625. In the

Optoelectronic component device 100 with a

Abstrahlverhältnis of the optoelectronic component 130 of 1.00 / 1 and the same control is emitted 70% of the total electromagnetic radiation up and 30% down, bringing a radiation ratio of the

Optoelectronic device device 100 of 0.4286 results. In the optoelectronic component device 100 with an emission ratio of the optoelectronic

Device 130 of 1.50 / 1 and a drive (PWM, PFM, PAM, DCM) of the electro-optic devices 110, 120, in which the second electro-optical device 110 to 100%

is transparent and the first electro-optical device is 40% transparent, results in a mirror pulse ratio of 2.5. As a result, 84% of the total electromagnetic radiation is emitted downwardly and emitted 16% upwards, resulting in an emission ratio of the optoelectronic component device 100 of 5.2500. In the

Optoelectronic component device 100 with a

Emission of the optoelectronic component 130 of 1.00 / 1 and a drive in which the second

electro-optical device 110 is 100% transparent and the first electro-optical device is 20% transparent, resulting in a mirror pulse ratio of 5. Thus, 90% of the total electromagnetic radiation emitted upwards and 10% down, bringing a Emission ratio of the optoelectronic

Device device 100 of 9,0000 results.

In the optoelectronic component device 100 with a Abs rahlverhäitnis the optoelectronic

Device 130 of 1.00 / 1 and a Ans euerung (P M, PFM, PAM, DCM) of the electronic components 110, 120, in which the first electro-optical component 110 is 20% transparent and the second electro-optical component to 90%

is transparent, 90% of the total electromagnetic radiation is emitted downwards and 10% emitted upwards, which results in a radiation ratio of the optoelectronic component device 100 of 0, 1111. In the optoelectronic component device 100 with a radiation ratio of the optoelectronic

Device 130 of 1.50 / 1 and a drive (PWM, PFM, PAM, DCM) of the electro-optical components 110, 120, in which the first electro-optical component 110 is 100% transparent and the second electro-optical component to 0%

is transparent, results in a mirror pulse of 0. This results in 100% of the total electromagnetic radiation emitted to the top and 0% emitted to the top, bringing a radiation ratio of optoelectronic

Device device 100 of 0 results. In the

Optoelectronic component device 100 with a

Abstrahlverhältnis of the optoelectronic component 130 of 1, 00/1 and a drive, wherein the first

electro-optical device 110 is 0% transparent and the second electro-optical device is 60% transparent, resulting in a mirror pulse ratio of infinity. As a result, 0% of the total electromagnetic radiation is emitted upwards and 100% down, bringing a

Emission ratio of the optoelectronic

Device device 100 of infinite results.

In various embodiments, the control signal of the optoelectronic component as an input signal the first electro-optical component and / or the

at least a second electroo tables. Be set up device. In various embodiments, the control signal of the first electro-optic component and / or the

at least one second electro-optical component to be set up as an input signal of the optoelectronic component.

Fig. 8 shows a conventional optoelectronic device.

A conventional optoelectronic component 800 has a first electrode 804 on a carrier 802. On the first electrode 804 is an organically functional

Layer structure 806 formed. About the organic

functional layer structure 806, a second electrode 808 is formed. The second electrode 808 is electrically isolated from the first electrode 804 by means of electrical insulation 812. On the second electrode 808, a barrier thin film 816 is arranged such that the second electrode 808, the electrical insulations 812, and the organic functional layer structure 806 of the

Barrier thin film 816 are surrounded. The

Barrier thin film 816 is intended to hermetically seal the enclosed layers with respect to harmful environmental influences. An adhesive layer 818 is disposed on the barrier film 816 such that the adhesive layer 818 seals the barrier film 816 flat and hermetic to harmful environmental influences. On the

Adhesive layer 818, a cover 820 is arranged. The cover 820 is adhered to the barrier film 816 with an adhesive 820. In various embodiments, a

Optoelectronic component and a method, for

Producing an optoelectronic component

provided with which it is possible that Appearance and the beam direction of OLED area light sources in the off state and / or to change in the on state. This makes it possible the radiation of the

Front side and / or back of a transparent OLED area light source depending on the transparency of the OLED area light source continuously or discreetly to change. The emission characteristics of one side of the

Area light sources can be changed in transmittance in a range of 0% to 100%. Furthermore, the appearance of the optically active times of the OLED area light sources in the off state, that is, in the optically inactive state of the OLED can be changed. The property of the appearance of an optically inactive side in the off state may include, for example, the transmissivity or reflectivity. Regardless of operating parameters of the OLED, the brightness of the OLED area light sources

be managed . Furthermore, the production of an OLED area light source according to various embodiments is technically easily possible, for example by a

electrically switchable mirror structure, for example, an electrically switchable mirror film or an electrically switchable mirror glass, is glued to the OLED.

Furthermore, the electrically switchable mirror structure can act as an encapsulation for the OLED. Furthermore, the electrically switchable mirror structure, for example in the form of an electrically switchable mirror foil or an electrically switchable mirror glass, allows a modular structure of an OLED area light source with a plurality of mirror structures.

Claims

claims

Optoelectronic component device (100, 302), on iron;

A radiation source having a first optically active region and a second optically active region, wherein the first optically active region is arranged to emit a first electromagnetic radiation, and the second optically active region is arranged to emit a second electromagnetic radiation (510) is set up; and

A first electro-optical component (110) and

at least one second electro-optical component (120); wherein the first electro-optical component (110) and the at least one second electro-optical component (120) in the beam path of

Radiation source (130) are arranged to each other such that the first electromagnetic radiation (500) is changed in a different manner than the second electromagnetic radiation (510), so that the first electromagnetic radiation (500) in at least one property of the second electromagnetic Radiation (510) is different; and

A control device, wherein the first electro-optical component, the second

electro-optical component and / or the

Radiation source are connected to the control device / is, wherein the control device comprises a pulse modulator, which is adapted for driving the first electro-optical component, the at least one second electro-optical component and / or the radiation source.

Optoelectronic component device (100, 302] according to claim 1, wherein the radiation source (130) as a

Area light source (130) is arranged, preferably as an organic light-emitting diode (130), wherein the

Surface normal of the first optically active region has a different orientation than the surface normal of the second optically active region.

Optoelectronic component device (100, 302) according to one of claims 1 or 2,

Wherein the first electro-optical component (110):

Beam path of the first optically active region is formed; and or

• wherein the second electro-optical component (120) is formed beam path of the first optically active region and / or the second optically active region.

Optoelectronic component device (100, 302) according to one of claims 1 to 3, further comprising: one or more static and / or self-regulating Auskoppelschicht / s (126, 128).

Optoelectronic component device (100, 302) according to one of claims 1 to 4,

wherein the Steuervo direction (202) is formed such that the optoelectronic properties of the first electro-optical component (110), the

at least one second electro-optical component (120) and the radiation source (130) independently

be changed from each other.

6. Optoelectronic component device (100, 302)

according to one of claims 1 to 5,

wherein the radiation source (130) is formed such that the first electromagnetic radiation (500) and the second electromagnetic radiation (510) in

at least one of the following properties are approximately equal or different: • Hue;

• saturation; or

• brightness,

Optoelectronic component device (100, 302) according to one of claims 1 to 6,

wherein the first electro-optical component (110) and the at least one second electro-optical component (120) are arranged such that the first optically active region and the second optically active region are in at least one of the following properties

distinguish:

• reflectivity;

• absorption; or

• Transmittivity.

Method for producing an optoelectronic

Device device comprising the method:

Forming a radiation source (130) with a

first optically active region and a second optically active region, wherein the first optically active region is designed to emit a first electromagnetic radiation (500) and the second optically active region to a second optically active region

Emitting a second electromagnetic

Radiation (510) is formed, - and

Forming a first electro-optical component (110) and forming at least one second one

electro-optical component (120); wherein the first electro-optical component (110) and the at least one second electro-optical component (120) in the beam path of the radiation source (130) are formed to each other such that the first electromagnetic radiation (500) is changed in a different manner than the second

electromagnetic radiation (510), so that the first electromagnetic radiation (500) in

at least one property of the second distinguish electromagnetic radiation (510); and

Providing a control device, wherein the first electro-optical component, the second electro-optical component and / or the

Radiation source is connected to the control device /, wherein the control device a

Pulse modulator, which is adapted for driving the first electro-optical component, the at least one second electro-optical component and / or the radiation source.

Method according to claim 8,

wherein the radiation source (130) as a

Surface light source (130} is formed, wherein the surface normal of the first optically active region has a different orientation than the surface normal of the second optically active region.

Method according to one of claims 8 or 9,

wherein the surface light source (130) as an organic

LED (130) is set up.

Method according to claim 10,

wherein the organic light emitting diode (130) is formed transparent translucent.

Method according to one of claims 8 to 11,

• wherein the first electro-optical component (110) is formed in the beam path of the first optically active region; and or

• wherein the second electro-optical component (120) is formed in the beam path of the first optically active region and / or the second optically active region.

13. The method according to any one of claims 9 to 13, wherein the first electro-optical component (110) and the at least one second electro-optical component (120) are arranged such that the first optically active region and the second optically active region are in at least one of the following properties

distinguish:

• reflectivity;

• absorption; or

• Transmittivity.

14. Method for operating an optoelectronic

Device device comprising the method:

• Control of an optoelectronic

Component device according to one of claims 1 to 13;

Wherein the first electro-optical component (110) and the at least one second electro-optical component (120) are driven differently, so that the first electromagnetic radiation (500) is changed in a different way than the second electromagnetic radiation (510), so that distinguish the first electromagnetic radiation (500) in at least one property from the second electromagnetic radiation (510).

15. The method according to claim 14,

wherein the first electro-optical component is driven such that the first optically active region at least partially emits a first electromagnetic radiation (500).