DE102014110271B4 - Optoelectronic component and method for producing an optoelectronic component - Google Patents

Abstract

Method (120) for producing an optoelectronic component (400), the method (120) comprising: • providing (130) a substrate (100), • forming (140) a layer on or above the substrate (100) in one first region (102) and a second region (104), wherein the first region (102) is disposed adjacent to the second region (104); and wherein the layer is formed at least partially simultaneously in the first region and in the second region, the layer being formed in the first region having a first thickness and a structured surface; - wherein the layer in the second region (104) is formed with a second thickness, wherein the second thickness is greater than the first thickness; and - wherein the layer in the first region (102) is translucent or transparent to visible light and the layer in the second region (104) is made opaque and / or specular with respect to visible light.

Description

The invention relates to an optoelectronic component and to a method for producing an optoelectronic component.

In various lighting applications, it makes sense that the illumination direction of a lighting device can be changed or a simultaneous illumination in opposite directions can take place.

In a conventional hybrid lighting device with lighting areas arranged next to one another, the lighting areas arranged next to one another are produced with high production costs. In a conventional method, a lighting device is provided with a first lighting area 702 and a second illumination area 704 on a carrier 700 produced by a multi-mask process, shown in FIG 7A -C. The first lighting area 702 is a transparent luminous field and the second lighting area 704 a so-called bottom emitter next to the first lighting area 702 is arranged. Illustrated in 7A are only the cathodes of the lighting device 700 with different transparency.

First, the first lighting area 702 by means of a first mask 708 with a first opening 710 formed by the material 706 of the first lighting area 702 through the first opening 710 on the carrier 700 is deposited, shown in 7B , Subsequently, a second mask 714 with a second opening 716 over the carrier 700 arranged. The second opening 716 is doing over the carrier 700 next to the first lighting area 702 aligned. Through the second opening 716 then becomes the material 712 on the carrier 700 deposited, shown in 7C , There is the risk that already deposited mask layers of the first illumination area 702 by depositing the material 712 of the second illumination area 704 be affected, for example by defects or particles between the second mask 714 and the first lighting area 702 ,

In another conventional method, the illumination light of the illumination device is laterally coupled by means of light emitting diodes (LED) in a waveguide, also referred to as Seiteneinkopplungslösung, wherein a waveguide is designed as a transparent / opaque cover of the LEDs.

In another conventional method, various singular organic light emitting diodes (OLEDs) of different types (transparent, bottom emitter, top emitter) are arranged in parallel or in series. However, the necessary wiring of the OLEDs and a hybrid structure of individual OLEDs can be very complex.

US 2007/0126681 A1 shows a method of forming a layer having different layer thicknesses in a central area and a side area on a substrate.

X.T. Hao et al. "Color tunability of polymeric light-emitting diodes with top emission architecture", Semicond. Sci. Technol., 21 (2006) pp. 19-24 shows an experimental setup in which indium tin oxide (ITO) is applied between a silver anode and a polymer stack as a layered anode.

US 2009/0231243 A1 shows an organic light-emitting display device with an intermediate layer with a hole transport layer whose thickness in the red pixel R is the largest.

The object of the invention is to form a laterally structured optoelectronic component in a simplified production manner. The optoelectronic component is for example a sheet-like component, for. B. a bidirectional organic light-emitting diodes (organic light emitting diode - OLED) -Leuchte.

The object is achieved according to one aspect of the invention by an optoelectronic component having an optically active structure with at least one electroluminescent layer. The electroluminescent layer is configured to provide electromagnetic radiation from an electrical current. In addition, the optoelectronic component has at least one layer with a first region and a second region. The first area is located next to the second area. The first region and the second region are arranged in the beam path of the electromagnetic radiation and / or the layer is a part of the optically active structure. The layer has a first thickness and a structured surface in the first region. In the second region, the layer has a second thickness, wherein the second thickness is greater than the first thickness. The layer in the first region is made translucent or transparent with respect to visible light, and the layer in the second region is made opaque and / or specular with respect to visible light.

The two regions of the layer enable a laterally structured bi-directional organic light-emitting diode with exact transitions between the different regions on a carrier substrate. This will be new Design options for the optoelectronic device allows. Furthermore, the defect and particle risk is reduced, which is increased by the use of multiple shadow masks. This leads to a higher yield in the production of the optoelectronic components and an optoelectronic component with a narrow, almost seamless sequential arrangement of differently emitting optoelectronic component units or optically active structures. This also allows an optoelectronic device, which is permeable to light in the first region and is suitable for light in the second region. As a result, an optical structuring can be realized in the surface emitting electromagnetic radiation, for example in the form of a freestanding region in the radiation-emitting surface. The surface emitting the electromagnetic radiation of the optoelectronic component may also be referred to as optically active surface, light emitting surface, radiation emitting surface, luminous surface or emitting surface. By means of the optical structuring of the emitting surface, information can be displayed in the emitting surface, for example a symbol, a lettering, a pictogram or an ideogram.

According to a further development of the optoelectronic component, the optoelectronic component has a first electrode and a second electrode. The layer comprises or is formed from an electrically conductive material. For example, the layer is formed as a first electrode or second electrode of the optoelectronic component. Alternatively or additionally, the layer comprises or is formed from an optically active material, for example an electroluminescent and / or photoluminescent material. An electrically conductive, electroluminescent layer may be formed as an emitter layer of the optoelectronic component. An electrically nonconductive, photoluminescent layer may be formed as a phosphor layer. The electrode as a layer in the region of the second thickness has a lower transmission than the electrode in the region of the first thickness. Furthermore, the structured surface of the electrode in the first region increases the coupling-out of electromagnetic radiation from the optically active structure. The structured surface can thus be embodied as a coupling-out structure, for example in that the structured surface has a structuring in the region of the wavelength of the electromagnetic radiation. Additionally or alternatively, the structured surface may increase the current distribution in the electrode. In the case of an emitter layer or phosphor layer, the properties of the emitted electromagnetic radiation can be adjusted by means of the thickness of the layer, for example the color locus or the color pencil. In the emitter layer, this is done by means of the different optical length of the optical cavity at different thicknesses of the layer. In the case of the phosphor layer this is done by means of the different absolute proportion of the wavelength-converted in the phosphor layer electromagnetic radiation. By means of the structured surface of the emitter layer or phosphor layer in the first region, a given inhomogeneity in the emitting surface can be realized. For example, this allows a given color pattern to be realized in the luminous area.

According to a further development of the optoelectronic component, the optoelectronic component has a first optoelectronic component unit by means of the layer in the first region and a second optoelectronic component unit in the second region, wherein the first optoelectronic component unit of the second optoelectronic component unit differs in at least one optical and / or electronic property. An optoelectronic component unit has a first electrode, a second electrode and an organic functional layer structure, which is arranged physically and / or electrically between the first electrode and the second electrode. A plurality of optoelectronic component units may be formed on a common carrier next to each other or stacked one above the other. This makes it possible that two different optoelectronic component units can be formed virtually seamlessly next to each other. As a result, the proportion of the optically inactive surface of the optoelectronic component can be reduced and the efficiency of the optoelectronic component can be increased with respect to the surface of the substrate. For example, multi-colored light-emitting components are thereby made possible, without or at least with reduced non-light-emitting region between the different colored light-emitting regions.

According to a further development, the optoelectronic component is designed as an organic optoelectronic component, for example as an organic light-emitting diode, an organic photodetector and / or an organic display component. In an organic optoelectronic component, an organic functional layer structure is formed between a first electrode and a second electrode. The organic functional layer structure comprises the electroluminescent layer, and has at least one organic substance or is formed therefrom. Organic optoelectronic components have the advantage that they can be easily formed at temperatures of less than 150 ° C on a large area.

The object is achieved according to a further aspect of the invention by a method for producing an optoelectronic component, in which a substrate is provided, and a layer is formed on or above the substrate. The layer is formed on or over the substrate in a first region and a second region. The first area is located next to the second area. The layer is formed at least partially simultaneously in the first region and in the second region. The layer is formed in the first region with a first thickness and a structured surface. In the second region, the layer is formed with a second thickness, wherein the second thickness is greater than the first thickness. With respect to visible light, the first region is translucent or transparent and the second region is opaque and / or reflective.

Illustratively, the layer is formed in regions arranged laterally with different thicknesses in a single process step. The simultaneous formation of the layer of different thicknesses allows to reduce the cost of the manufacturing process by reducing the number of mask layers required. For example, this saves the money for the use of additional masks and the cycle times for the formation of the optoelectronic component are reduced. Furthermore, a cost-effective lateral structuring of the radiation-emitting surface is made possible. Conventionally, masks are placed over the substrate in successive mask processes. The effort for the exact alignment of the mask openings, for example by optical methods, over the area of the substrate to be processed is very high. The simultaneous formation of the layer in the first region and in the second region has the effect of simplifying the method for producing the optoelectronic component, for example by eliminating alignment of at least the mask for forming the second region compared to the conventional method. Furthermore, no adjustment tolerances are to be considered for the formation of the layer in the second region after the formation of the layer in the first region. As a result, a sharp, virtually unsteady transition between the first region and the second region of the layer is furthermore made possible.

According to one development of the method, the method further comprises forming an optically active structure having at least one electroluminescent layer. The electroluminescent layer is formed to provide electromagnetic radiation from an electric current. The first region and the second region of the layer are formed in the beam path of the electromagnetic radiation and / or are formed as part of the optically active structure. This allows the first region and the second region to act on the beam path of the electromagnetic radiation. As a result, the appearance of the emitting surface is laterally structurable by means of the layer.

According to a development of the method, the layer is formed by means of a mask process with a mask. The mask has a first mask area and a second mask area. The first mask area and the second mask area have one or more openings. The first mask region differs from the second mask region in at least one of: the arrangement of aperture (s), the mean distance of apertures, the size of apertures, the shape of apertures, the number of apertures, the number density of apertures, and / or the area fraction of the opening (s) on the mask area. This makes it possible to form a predetermined, laterally structured layer on the substrate or a predetermined, lateral structuring in a layer on the substrate by means of a mask. The mask is for example a multi-layer screen masks or a microstructured shadow masks. By means of a microscopic change in the mesh density and / or the mesh diameter, vapor deposition of laterally different layer thicknesses in one process step is made possible. In the first mask area and / or in the second mask area, also referred to as masking units, the mask may be coated with a material-repellent layer. This increases the uniformity of the layer and the life of the mask. Furthermore, in the case of a metallic electrode deposition, a different layer thickness is realized in the first region of the layer than in the second region of the layer. For example, an electrode can be realized with regions of different layer thickness, the regions being transparent or non-transparent.

According to one development of the method, the mask is arranged above the substrate in such a way that the first mask area is arranged above the first area, and the second mask area is arranged above the second area. This allows the layer to be formed simultaneously in the first region and in the second region of different thickness.

According to a development of the method, the mask is arranged at a distance above the substrate. This allows areas of the layer to be coated, irradiated, or removed below opaque areas of the mask. This can irrelevant the impermeable Formed areas of the mask, a closed layer on the substrate, or a predetermined structuring of the structured surface of the layer can be formed. The degree of closed surface can be adjusted by means of the distance of the mask to the substrate and the spacing of the openings in the mask.

According to a development of the method, the mask has a positioning structure, or a positioning structure is arranged between the mask and the substrate. Thereby, the distance of the mask to the substrate and / or the alignment of the first mask region and the second mask region with respect to the first region and the second region of the layer to be formed can be adjusted in a simple manner.

According to a development of the method, the layer is formed in the first region and in the second region using a single mask. This allows a simplification of the method by simplifying or eliminating the adjustment in successive mask processes.

According to a development of the method, the mask process comprises a gas phase deposition of a material through the mask, for example a physical vapor deposition, a chemical vapor deposition, an atomic layer deposition or a molecular layer deposition. This enables a direct, structured formation of the layer in the first region or the second region without further process steps.

According to a development of the method, the material of the layer or a starting material of the material of the layer with the second thickness or with a third thickness that is greater than the second thickness is formed flat on the substrate. Furthermore, the method comprises irradiating the material or the starting material of the layer through the mask, for example irradiating the starting material with an electromagnetic radiation and / or a particle beam, for example an electron or ion beam, or a chemically reactive substance. By means of irradiation, the material or the starting material is chemically converted. The starting material can thereby be converted into the material in the irradiated areas, for example by means of a crosslinking process and / or hardening. The non-irradiated area of starting material can then be removed, for example wet-chemically by means of a solvent or an etching medium. Alternatively, the material is chemically reduced by the irradiation, for example decomposed or degraded. The irradiated area of reduced material can be removed, for example wet-chemically by means of a solvent or an etching medium.

According to a development of the method, the material of the layer with the second thickness or with a third thickness, which is greater than the second thickness, is formed flat on the substrate. Furthermore, the method has an etching process, wherein a part of the layer is removed at least in the first region by means of an etching medium through the mask. As a result, the layer is formed in the first region with the first thickness and structured surface. The etching medium may be a chemically and / or physically acting etching medium, for example an oxidizing agent or a reducing agent, for example potassium hydroxide, hydrogen chloride, hydrofluoric acid; or a plasma. The material of the second thickness layer or of a third thickness greater than the second thickness is removed from the first area and the second area to different degrees by the mask. This further allows forming the structured surface of the layer in the first region. In addition, the surface of the layer in the second region can be structured in this way.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it:

1A , B are schematic representations of an embodiment of a method for producing an optoelectronic component;

2 a schematic cross-sectional view of a precursor of an optoelectronic component in the method for producing the optoelectronic device;

3A -C schematic representations of various developments of the method for producing the optoelectronic component;

4A -F schematic representations of various developments of the optoelectronic device;

5A -C schematic representations of various developments of the optoelectronic component;

6A B shows schematic representations of various developments of the optoelectronic component; and

7A -C a conventional method for producing an optoelectronic component.

In the following detailed description, reference is made to the accompanying drawings, which form a part of this specification, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments may be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made. It should be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

An optoelectronic component may have one, two or more optoelectronic components. Optionally, an optoelectronic component may also have one, two or more electronic components. An electronic component may have, for example, an active and / or a passive component. An active electronic component may have, for example, a computing, control and / or regulating unit and / or a transistor. A passive electronic component may for example comprise a capacitor, a resistor, a diode or a coil.

An optoelectronic component may be an electromagnetic radiation emitting component or an electromagnetic radiation absorbing component. An electromagnetic radiation absorbing component may be, for example, a solar cell or a photodetector. In various embodiments, a component emitting electromagnetic radiation can be a semiconductor device emitting electromagnetic radiation and / or a diode emitting electromagnetic radiation, a diode emitting organic electromagnetic radiation, a transistor emitting electromagnetic radiation or a transistor emitting organic electromagnetic radiation be. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the electromagnetic radiation emitting device may be formed, for example, as a light emitting diode (LED) as an organic light emitting diode (OLED), as a light emitting transistor or as an organic light emitting transistor. The light emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting components may be provided, for example housed in a common housing.

1A B illustrate an exemplary embodiment of a method for producing an optoelectronic component.

The optoelectronic component is formed by means of a mask process. The mask process includes placing a mask 108 over a substrate 100 on. The mask 108 will be at a distance 110 above the substrate 100 arranged.

The mask 108 has a first mask area 112 and a second mask area 114 on. The first mask area 112 the mask 108 differs in at least one property of the second mask area 114 the mask 108 , The mask 108 has a plurality of openings, by means of which a first area 102 a layer and a second area 104 the layer can be formed simultaneously. The openings of the mask 108 are permeable to a material or radiation - as will be described in more detail below, and in US Pat 1A by means of the arrow 106 is illustrated. The mask 108 will be described in more detail below.

By means of differently set mask areas, the first mask area 112 and the second mask area 114 , and the arrangement of the mask 108 at a distance 110 above the substrate 100 becomes a layer with a first area in a single process step 102 and a second area 104 educated. In other words, it becomes a procedure 120 for producing an optoelectronic component 400 provided. The procedure 120 has a provision 130 a substrate 100 , and on or over the substrate 100 a training 140 a layer with or in a first area 102 and a second area 104 for example, illustrated in the flowchart in FIG 1B , The first area 102 is next to the second area 104 arranged. The layer is in the first area 102 and in the second area 104 at least partially formed simultaneously. The layer is in the first area 102 formed with a first thickness and a textured surface. In the second area 104 the layer is formed with a second thickness, wherein the second thickness is greater than the first thickness.

By the mask 108 in the distance 110 above the substrate 100 is arranged, the openings in the mask are free of direct contact with the substrate 100 , As a result, vaporization of the material impermeable areas of the mask occurs 108 , For example, the webs in the sieve. The underdamping is microscopically visible, but may be macroscopically inconspicuous. By depositing material of the layer through the mask 108 on the substrate 100 is by means of the partial shading of the substrate 100 a layer formed with laterally different layer thicknesses. The partial shielding of the surface of the substrate 102 thus results in reduced thicknesses of the layer. The layer of reduced thickness may appear at least translucent. The layer thus appears overall by means of a mask 108 laterally structured opaque or transparent. Instead of a multi-mask process for the different layer thicknesses, a simplified production of bidirectional organic light-emitting diodes, a bottom emitter or a top emitter can be provided depending on the desired surface light source.

In one development is the mask 108 formed as a microstructured shadow mask or screen structure.

In one development, the layer is the first area 102 and second area 104 formed by the substrate 100 through the mask 108 is steamed with a material. In one development, the layer is the first area 102 and second area 104 is formed as an electrical contact layer of the optoelectronic component, for example a metal layer. In a development, the optoelectronic component is designed as a surface light source.

Further, an optically active structure 414 trained, for example, illustrated in 4A , The optically active structure 414 is formed with at least one electroluminescent layer. The electroluminescent layer is formed to provide electromagnetic radiation from an electric current. The layer in the first area 102 and the layer in the second area 104 are arranged in the beam path of the electromagnetic radiation and / or are / are part of the optically active structure 414 ,

In a further development, the layer is masked by means of a mask process with a mask 108 is formed, wherein the mask 108 a first mask area 112 and a second mask area 114 having. The first mask area 112 differs from the second mask area 114 in at least one of the following: the arrangement of apertures, the mean spacing of apertures, the size of apertures, the shape of apertures, the number of apertures, the number density of apertures, and / or the area ratio of apertures on the mask portion 108 ,

In a further development, the layer is in the first area 102 and in the second area 104 using a single mask 108 educated.

In a development, the mask process comprises a gas phase deposition of a material through the mask 108 for example, a physical vapor deposition, a chemical vapor deposition, an atomic layer deposition or a molecular layer deposition. Alternatively, the masking process comprises irradiating the material of the layer through the mask 108 on, for example, irradiation by means of electromagnetic radiation and / or a particle beam. Alternatively, the mask process is set up as an etching process, by means of an etching medium through the mask 108 a part of the layer at least in the first area 102 Will get removed.

The mask 108 has a first mask area 112 and a second mask area 114 on, wherein at least the first mask area 112 has two or more openings. The second mask area 114 has one or more openings. Alternatively, the second mask area 114 is formed as an impermeable structure, for example, impermeable to a deposition of the material of the layer. The mask 108 is placed over the substrate such that the first mask area 112 over the first area 102 and the second mask area 114 over the second area 104 are arranged.

The mask 108 is formed in one piece, for example as a sieve screen or as a microstructured plate.

The layer is in the second area 104 formed substantially planar, for example, such that the surface of the layer in the second region 104 has a roughness of less than 0.25 μm. Alternatively, the structured surface of the layer in the first region 102 a first structuring on and the layer in the second area 104 a structured surface having a second structuring, wherein the second structuring is different from the first structuring. The second structuring differs from the first structuring in one of the following properties of the structures: in aspect ratio, shape or periodicity.

In a development, the layer is formed such that it in the first area 102 has a difference in at least one optical and / or electrical characteristic than in the second region 104 ,

In a development, the first area is with respect to visible light 102 translucent or transparent and the second area 104 opaque and / or specular. In a development, the optoelectronic component is designed such that the first region 102 a first visible light and the second area 104 emits a second visible light, wherein the first visible light and the second visible light have a different color location, a different brightness and / or a different saturation.

In one development, the layer is formed with or made of an electrically conductive material, for example formed as an electrode of the optoelectronic component. Alternatively or additionally, the layer is formed with or from an optically active material, for example an electroluminescent and / or photoluminescent material.

The optoelectronic component is formed as an organic optoelectronic component, for example as an organic light-emitting diode, an organic photodetector and / or an organic display component. In a development, the optoelectronic component is designed as a display component having a large number of pixels, wherein each pixel is formed from two or more subunits and the first optoelectronic component unit 420 and the second optoelectronic device unit 410 be formed as subunits of a pixel.

2 FIG. 2 illustrates a precursor of an optoelectronic component in the method for producing the optoelectronic component, which for example largely corresponds to that in FIG 1 shown embodiments may correspond. In the schematic side view in 2 the vapor deposition case is illustrated, with the underdamping of a non-adjacent shadow mask 108 is exploited.

In the schematic cross-sectional view AA in 2 is the mask 108 at a distance 110 above the substrate 100 after forming the layer with the first region 102 and second area 104 on the substrate 100 illustrated.

The layer with the first area 102 and second area 104 is in the in 2 illustrated training as a second electrode 214 of the optoelectronic component, as will be described in more detail below.

The mask 108 with first mask area 112 and second mask area 114 is in the distance 110 by means of a positioning structure 202 above the substrate 100 arranged as described in more detail below.

In the in 2 illustrated embodiment of the mask 108 indicates the first mask area 112 an arrangement of a plurality of openings. The second mask area 114 is formed as an opening.

In a further development of the method 120 becomes the material of the layer with the first area 102 and second area 104 through the mask 108 on the substrate 100 deposited.

On the substrate 100 in the area below the first mask area 112 the mask 108 gets less material on the surface of the substrate 100 than on the substrate 100 in the area below the second area 114 the mask 108 , Thus, the layer in the second area 104 a greater layer thickness than in the first area 102 the layer. By means of the arrangement of the mask 108 at a distance 110 above the substrate 100 become the areas between the openings of the first mask area 112 the mask 108 behind coated. This will make the layer in the first area 102 formed with a textured surface, in 2 illustrated by the wavy surface of the layer 214 in the area 102 while the shift 214 in the second area 104 has a planar surface.

In the context of this description is the substrate 100 a structure with a surface on which the layer with the first area 102 and second area 104 is trained. In the in 2 illustrated embodiment, the substrate 100 on: a carrier 200 , a first electrode 210 on or above the vehicle 200 ; an organic functional layer structure 212 on or above the first electrode 210 ; several electrical connections 218 that with the first electrode 210 (not illustrated) or the second electrode 214 physically connected and electrically coupled; and electrical insulations 204 that the first electrode 210 from the second electrode 214 electrically isolate. Further developments of the optoelectronic component and the illustrated layers are in 4A to 4F described in more detail.

3A to 3C illustrate various developments of the method for producing the optoelectronic device, which may for example largely correspond to the embodiments shown above.

In a further development of the method 120 becomes the layer with first area 102 and second area 104 trained by a material 306 from a source of material 304 through the mask 108 on the substrate 100 is deposited. The material 306 gets from the material source 304 at an opening angle to the substrate 100 applied. The material source 304 is, for example, a source usable for physical or chemical vapor deposition or atomic layer deposition.

The mask 108 will be at a distance 110 above the substrate 100 arranged. In the distance 110 is a positioning structure 202 arranged. Above is a structure 310 arranged with openings. The mask 108 has the positioning structure 202 on. Alternatively, the positioning structure 202 between the mask 108 and the substrate 100 is arranged.

The structure 310 with openings can also be used as a thread structure 310 be designated. The thread structure 310 is an array of filaments having at least a first filament and a second filament, the first filament and the second filament forming an aperture having a surface. Alternatively, the thread structure 310 as a microstructured plate 310 or a sieve structure 310 formed with webs, for example illustrated in 3A ,

The mask 108 has the positioning structure 202 and the thread structure 310 on and is on or above the substrate 100 arranged. Alternatively, the mask indicates 108 the thread structure 310 on, and is on or above the positioning structure 202 above the substrate 100 arranged.

The positioning structure 202 becomes relative to the substrate 100 arranged in a first plane and the thread structure 310 in a second level. Because of the thread structure 310 in the distance 110 above the substrate 100 is arranged is at least a part 302 of the substrate 100 under or behind the thread structure 310 back-coated or under-evaporated, for example illustrated in FIG 3A , The thread structure 310 causes partial shading of the material of the layer. This allows the first thickness and the structuring of the surface of the first area 102 the layer 102 be set. The structure range of underdamping, underexposure or undercut depends on the width of the impermeable areas of the mask 108 in the beam access of the material 306 , the radiation or the etching medium, for example the web width of the thread structure 310 , Furthermore, the structural area is dependent on the thickness of the impermeable area, for example the web thickness of the thread structure 310 , Furthermore, the structure area is dependent on the thickness of the positioning structure 202 That is, the minimum distance of the openings of the mask 108 from the surface of the substrate 100 , The distance 110 and / or the thickness of the positioning structure 202 causes or effect, for example, the desired Unterdampfung or shading of the surface of the substrate 100 ,

In a further development is the positioning structure 202 formed such that the thread structure 310 in the distance 110 above the substrate 100 by means of a physical contact of the thread structure 310 with the positioning structure 202 and / or the positioning structure 202 with the substrate 100 is arranged.

Furthermore, the positioning structure 202 formed such that the first mask area 112 directly above the first area 102 and the second mask area 114 directly above the second area 104 are positionable. The positioning structure 202 is designed, for example, as a frame.

In a further development of the method 102 becomes the substrate 100 under the mask 108 and the material source 304 passed through, illustrated in 3A by means of the arrow 308 , In other words: the substrate 100 is driven in so-called inline mode via the one linear source. This makes it possible to form the layer with the first region 102 and second area 104 on a relatively large substrate 100 by means of a relatively small, quasi punctiform, material or radiation source.

It is clear in 3A the principle of action of the laterally partially microstructured shadow mask 108 as a mask 108 illustrated with underdamping. The openings of the shadow mask 108 have a dimension of from about 10 μm to about 100 μm, for example from about 20 μm to about 75 μm, for example from about 50 μm. Partially, the mask 108 also have a 20-grid with dimensions of the openings of about 30 microns to 40 microns. By means of the shielding of the substrate 100 by means of the mask 108 This results in a layer with a reduced layer thickness, and for example with lateral waviness. The distance 110 the mask 108 above the substrate 100 has a value in a range of about 100 μm to about 1000 mm, for example, from about 500 μm to about 10 mm, for example, about 1 mm.

In a further development of the mask 108 assigns the mask 108 in addition a flat structure 312 with at least one opening, for example illustrated in FIG 3B , The area of the opening of the flat structure 312 is greater than the mean area of the openings of the thread structure 310 , The flat structure 312 can also act as a template structure 312 be designated. The template structure 312 For example, it may be formed as a patterned or microstructured plate. The template structure 312 has one or more predetermined openings (s), each with a surface. The area of the opening of the thread structure 310 is smaller than the area of the opening of the template structure 312 , This allows the template structure 312 used to make the permeable area of the thread structure 310 in a simple way to downsize.

The template structure 312 is in the beam path of the material 306 or irradiation (not illustrated) over the substrate 100 arranged. The thread structure 310 and the template structure 312 are arranged above the substrate such that at least one opening of the template structure 312 and at least one opening of the thread structure 310 over the first area 102 are arranged so that a contiguous opening through the mask 108 is trained. For example, in the second electrode of the optoelectronic component as a layer with first region and second region, the second electrode 214 and / or the structured surface of the second electrode 214 in the first area 104 through the opening of the template structure 312 and the opening of the thread structure 310 educated.

The template structure 312 is in a third plane above the substrate 100 arranged. Alternatively, the template structure 312 arranged in the second level and the thread structure 310 in the third level.

In a further development is the template structure 312 formed from an epoxy compound or has such. The template structure 312 represents an additional possibility of lateral structuring, for example, for large-scale shading. This allows the thread structure 310 be generated from a single grid. This simplifies the manufacturing process of the layer, since a thread structure 310 for a variety of different template structures 312 can be used.

By means of the template structure 312 can easily layer the first area 102 and second area 104 be formed flat over the substrate. This results in a lateral structuring of the thread structure 310 optionally also by means of the first area 102 and the second area 104 the layer formed. This allows for a thread structure 310 for a variety of different template structures 312 can be used. This enables a flexible, customer-specific design of very different designs of the optoelectronic component.

In a further development, the template structure acts 312 as a positioning structure 202 by changing the template structure 312 between the thread structure 310 and the substrate 100 is arranged, for example on the substrate 100 , This allows the thread structure 310 in a simple way in the distance 110 above the substrate 100 be arranged and a separate positioning structure 202 become optional.

In a further development of the mask 108 assigns the mask 108 a non-stick coating 314 exposed on the surface of the mask 108 on, for example, in 3C , The non-stick coating 314 is designed to have an anti-adhesive effect on the material 304 the layer with the first area 102 and second area 104 having. This will be the material 306 the layer containing the openings of the thread structure 310 could close off on deposition, easier on the mask 108 removable or does not stick to the mask 108 , This allows the mask 108 easier and cheaper to clean and reuse.

In a further development, the non-stick coating with respect to the material that passes through the mask 308 reaches a Lotus surface structure in such a way that the non-stick coating has a lotus effect.

4A to 4F illustrate various developments of the optoelectronic device, which may for example largely correspond to the embodiments shown above.

In one embodiment, the optoelectronic component 400 an optically active structure 414 with at least one electroluminescent layer. The electroluminescent layer is configured to provide electromagnetic radiation from an electrical current. Furthermore, the optoelectronic component 400 at least one layer with a first area 102 and a second area 104 on, the first area 102 next to the second area 104 is arranged, and the first area 102 and the second area 104 are arranged in the beam path of the electromagnetic radiation and / or the layer is a part of the optically active structure 414 is. The layer in the first area 102 has a first thickness and a textured surface, and the layer in the second area 104 a second thickness, wherein the second thickness is greater than the first thickness.

The optoelectronic component 400 has an optically active structure 414 on or above the vehicle 200 on.

The optically active structure 414 has at least one first electrode 210 , an organic functional layer structure 212 and a second electrode 214 on which one or more layer (s) with a first area 102 and a second area 104 have or have or are designed in such a way or are.

In the in 4A to 4F illustrated developments of the optoelectronic component 400 is for illustrative purposes the second electrode 214 as a layer with the first area 102 and second area 104 trained or furnished.

In a development is by means of the layer in the first area 102 a first optoelectronic component unit 420 and in the second area 104 a second optoelectronic component unit 410 formed, wherein the first optoelectronic component unit 420 from the second optoelectronic component unit 410 differs in at least one optical and / or electronic property. In other words: by means of the second electrode 214 with first area 102 and second area 104 is in the optoelectronic device 400 a first optoelectronic component unit 420 and a second optoelectronic component unit 410 realized, for example, illustrated in 4A , The first optoelectronic component unit 420 is defined as the planar part of the optically active structure 414 with the first area 102 the second electrode 214 , and the second optoelectronic component unit 410 by means of the part of the optically active structure 414 with the second area 104 the second electrode 214 ,

In a development, for example, illustrated in 4A , is the second electrode 214 with first area 102 and second area 104 formed such that the first area 102 and the second area 104 the second electrode 214 are physically interconnected and have a sharp, quasi discontinuous, discrete or stepped transition.

In the in 4A illustrated development of the second electrode 214 is the second area 104 the second electrode 214 by the second thickness of the electrically conductive material of the second electrode 214 opaque and / or reflective. As a result, the second optoelectronic component unit 410 as a downwardly emitting electromagnetic radiation device unit, that is, as a bottom emitter, illustrated by means of the arrow 434 , The first area 102 the second electrode 214 has a first thickness at which the second electrode 214 at least partially transparent or translucent with respect to the emitted electromagnetic radiation. As a result, the first optoelectronic component unit 420 a bi-directionally emitting optoelectronic component unit, also referred to as bidirectional emitting electromagnetic radiation, illustrated by means of the arrows 430 . 432 ,

Thus, by means of a single mask 108 , and thus in a simpler way, a laterally structured second electrode 214 be trained in the first area 102 is transparent or translucent, and in the second area 104 opaque and / or reflective. This will be an optoelectronic device 400 realized that side by side in at least one different main emission direction electromagnetic radiation emitting device units 410 . 420 on a common carrier 200 having. By means of a single mask 108 The adjustment tolerances can be used to align multiple masks one after the other over the carrier 200 eliminated or reduced, so that between the optoelectronic component units 410 . 420 a particularly sharp transition can be realized.

Furthermore, the optoelectronic component 400 in one beam path or in several beam paths of the electromagnetic radiation 430 . 432 . 434 a coupling-out structure (not illustrated), for example on the carrier or the cover of the optoelectronic component. The coupling-out structure has particles embedded in a matrix with respect to the electromagnetic radiation-scattering particles.

Furthermore, the optoelectronic component 400 an encapsulation structure. The encapsulation structure has a barrier thin film 408 , a tie layer 424 and a cover 426 on. Alternatively, the barrier thin film 408 optional, leaving the cover 426 directly on the optically active structure 414 and the substrate 100 by means of the bonding layer 424 connected is. Alternatively, the cover 426 and / or the tie layer 424 optional, so that the optically active structure 414 by means of the barrier thin film 408 hermetically sealed. In an encapsulation structure with interconnect layer 424 and barrier thin film 408 the connection layer acts 424 as a mechanical protection for the barrier thin film 408 , In an encapsulation structure with cover 426 and barrier thin film 408 the cover works 426 as a mechanical protection with respect to the barrier thin film 408 , and may for example by means of a plasma spraying directly on the barrier thin film 408 be formed.

The illustrated optoelectronic component 400 is formed monolithic in that the encapsulation structure has approximately the same dimension as the carrier 200 ,

In a further development, for example illustrated in 4B , becomes the optoelectronic component 400 with an intermediate area 436 between the first area 102 and the second area 104 the second electrode 214 educated. In a further development is the intermediate area 436 a part of the second electrode 214 and differs in at least one electrical and / or optical characteristic to the first region 102 and the second area 104 the second electrode, for example, has the intermediate region 436 a third thickness that is different to the first thickness and the second thickness. Alternatively, the intermediate area 436 free of material of the second electrode 214 , In the in 4B illustrated embodiment of the optoelectronic device 400 is in the intermediate area 436 a part of the at least partially translucent barrier thin film 408 educated. As a result, in the case of an electrically insulating barrier thin film 408 the first area 102 the second electrode 214 from the second area 104 the second electrode 214 be electrically isolated. This enables an electrically independent, individual control of the juxtaposed first optoelectronic component unit 420 and the second optoelectronic device unit 410 as described in more detail below. The driving, for example, by means of providing a current to the electrodes 210 . 214 the optoelectronic component unit 410 . 420 be realized, for example, an alternating current, a direct current, a pulse amplitude modulated current or a pulse-code-modulated current.

In a further development, the first electrode 210 the first optoelectronic component unit 420 and the first electrode 210 the second optoelectronic component unit 410 electrically and / or physically isolated from each other (not illustrated). The first electrode 210 is at least partially translucent.

In a further development, for example illustrated in 4C , is in the intermediate area 436 and / or in the layers or structures above or below the intermediate region 436 an electrically conductive structure 438 educated. The electrically conductive structure 438 can in or on the carrier 200 , the first electrode 410 , the organic functional layer structure 412 and / or the barrier thin film 408 be educated. The electrically conductive structure 438 For example, it may be an electrical connection layer or an electrical busbar. The electrically conductive structure 438 is an electrically conductive connection of the optoelectronic component units 410 . 420 set up. Alternatively or additionally, the electrically conductive structure 438 for increasing the area current distribution in the optoelectronic component units 410 . 420 set up.

In a further development, for example illustrated in 4D , is in the first optoelectronic devices unit 420 a lateral optical structuring 440 educated. The lateral optical structuring 440 is in the beam path of at least one emission direction of the first optoelectronic component unit 420 emitted electromagnetic radiation 430 . 432 educated. The lateral optical structuring 440 is formed such that it the beam path of at least one of these electromagnetic radiation 430 . 432 deflects and / or at least part of this electromagnetic radiation 430 . 432 absorbed. The lateral optical structuring 440 can with respect to the electromagnetic radiation 430 . 432 For example, optically inactive, transparent, reflective or reflective formed as the area of the first optoelectronic component unit 420 which is free of lateral optical structuring 440 ,

In a further development, the lateral optical structuring 440 formed of a phosphor adapted to wavelength-convert at least a portion of the transmissive electromagnetic radiation.

Alternatively or additionally, the optically lateral structuring 440 in the second optoelectronic component unit 410 educated.

By means of the lateral optical structuring 440 can in a simple way in the radiation-emitting surface of the optoelectronic component units 410 . 420 the optically active structure 414 an information is visually displayed.

In a further development, the lateral optical structuring 440 as an electrically conductive or electrically insulating intermediate region 436 educated.

The optoelectronic component 400 can have any number and / or size of areas and / or directions of radiation-emitting areas, that is to say optoelectronic component units.

In a further development of the optoelectronic component 400 has the optoelectronic component 400 Component-external connections 218 on. By means of the component-external connections 218 are the optoelectronic component units 410 . 420 supplied with an electric current from a component-external power source. The first electrode 210 and the second electrode 214 are each with an electrical connection 218 electrically connected. The first electrode 210 and the second electrode 214 the optoelectronic component units 410 . 420 each have a physical contact with an electrical connection 218 on. Alternatively, the first electrode 210 or the second electrode 214 by means of an electrical connection structure 438 electrically with the respective connection 218 connected to the electrode. The first optoelectronic component unit 420 and the second optoelectronic device unit 410 may comprise one or more common electrodes or contacts (one pole), for example illustrated in FIG 4E ,

In a further development of the optoelectronic component 400 , for example, illustrated in 4F , assign the first optoelectronic device unit 420 and the second opto-electronic device 410 one electrical connection each 218 which is electrically isolated from the other optoelectronic component unit. In other words, the optoelectronic component units 410 . 420 have separate contact (one pole). This allows a separate control of the optoelectronic component units 410 . 420 ,

In a further development of the optoelectronic component 400 have the optoelectronic component units 410 . 420 a common electrical contact on. Alternatively, the electrical contacting of the optoelectronic component units 410 . 420 electrically and / or physically separated.

In a further development of the optoelectronic component 400 have the optoelectronic component units 410 . 420 a common contact electrode. Alternatively, the contact electrode of the optoelectronic component units 410 . 420 electrically and / or physically separated.

In a further development of the optoelectronic component 400 have the optoelectronic component units 410 . 420 a common organic functional layer structure 212 on. Alternatively, the optoelectronic component units 410 . 420 organic functional layer structures 212 which are electrically and / or physically separated from each other.

In a further development of the optoelectronic component 400 have the optoelectronic component units 410 . 420 one of the following designs: top emitter, bottom emitter, bidirectional emitter.

Furthermore, the optoelectronic component units 410 . 420 with or without barrier thin film 408 be educated. Furthermore, the organic functional layer structure of the optoelectronic component units 410 . 420 be completely covered by metallization, or be textured and partially exposed. In other words, any combination of contacting all contacts is conceivable, and combinations without electrical isolation 204 ,

In a further development, the organic functional layer structure 212 a layer with a first area 102 and a second area 104 on. As a result, by means of the laterally different organic functional layer structure 212 from the optoelectronic component units 410 . 420 electromagnetic radiation of different colors are emitted.

In a further development, the layer is in the second area 104 substantially planar, for example, the surface of the layer in the second region 104 a roughness of less than 0.25 microns.

In a development, the structured surface of the layer in the first area 102 a first structuring on and the layer in the second area 104 a structured surface having a second structuring, the second structuring being different from the first structuring. The second structuring may be different from the first structuring in one of the following properties of the structures: the aspect ratio, the shape, the periodicity.

A structuring has a periodic and / or random arrangement of elevations and / or depressions in the surface. The elevations and / or depressions may have a convex and / or concave shape; for example, be hole-shaped, trench-shaped or lenticular.

In a development, the layer is formed such that the layer in the first area 102 has a difference in at least one optical and / or electrical characteristic compared to the second range 104 ,

In a development, the first region is with respect to visible light 102 translucent or transparent, and the second area 104 opaque and / or reflective.

In a development, the optoelectronic component is designed such that the first region 102 a first visible light and the second area 104 emits a second visible light, wherein the first visible light and the second visible light have a different color location, a different brightness and / or a different saturation.

In one development is an intermediate area 436 between the first area 102 and the second area 104 on the substrate free from the layer.

In a further development, the substrate 100 under or in the intermediate area 436 an electric busbar on.

In a further development, the first optoelectronic component unit 420 and the second optoelectronic device unit 410 at least one common electrode and / or a common electrical component-external connection 218 on.

In a development, the first optoelectronic component unit 420 from the second optoelectronic component unit 410 electrically isolated such that the operating current of the first optoelectronic component unit 420 only through the first optoelectronic component unit 420 flows and the operating current of the second optoelectronic component unit 410 only through the second optoelectronic component unit 410 flows.

In a development, the optoelectronic component 400 as an organic optoelectronic component 400 formed, for example, as an organic light-emitting diode, an organic photodetector and / or an organic display device.

In one development, the optoelectronic component is designed as a display component with a large number of pixels, each pixel being formed from two or more subunits and the first optoelectronic component unit 420 and the second optoelectronic device unit 410 are formed as subunits of a pixel.

The optoelectronic component 400 has a hermetically sealed substrate, an active region and an encapsulation structure.

The hermetically sealed substrate has the carrier 200 and a barrier layer up.

The active region is an electrically active region and / or an optically active region. The active region is, for example, the region of the optoelectronic component 400 in which electrical current for operation of the optoelectronic component 400 flows and / or generated and / or absorbed in the electromagnetic radiation. Clearly describes the electrically active structure 414 the horizontal extent of the vertical active area.

The electrically active region has the first electrode 210 , the organic functional layer structure 212 and the second electrode 214 on.

The organic functional layer structure 212 may comprise one, two or more functional layered structure units and one, two or more interlayer structures between the layered structure units. The organic functional layer structure 212 For example, it may comprise a first organic functional layer structure unit, an interlayer structure, and a second organic functional layer structure unit.

The encapsulation structure may be a second barrier thin film 408 , a tie layer 424 and a cover 426 exhibit.

The barrier layer may include or be formed from any of the following materials: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide, lanthano, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, as well as mixtures and alloys thereof.

The barrier layer is formed by one of the following methods: Atomic Layer Deposition (ALD), for example Plasma Enhanced Atomic Layer Deposition (PEALD) or a Plasma-less Atomic Layer Deposition (PLALD). ; a chemical vapor deposition (CVD) process, for example, plasma enhanced chemical vapor deposition (PECVD) or plasmaless plasma vapor deposition (PLCVD); or alternatively by other suitable deposition methods.

The barrier layer has a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness of about 10 nm to about 100 nm according to a Embodiment, for example, about 40 nm according to an embodiment.

The barrier layer is optional when the wearer 200 is already hermetically sealed, for example, comprises a glass, a metal or a metal oxide or is formed therefrom.

The carrier 200 comprises glass, quartz, and / or a semiconductor material or is formed therefrom. Alternatively or additionally, the carrier comprises or is formed from a plastic film or a laminate with one or more plastic films. The plastic is one or more polyolefins (for example high or low density polyethylene (PE) or polypropylene (PP)), polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN). Alternatively or additionally, the carrier 200 a metal or formed therefrom, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel.

The carrier 200 may be formed as a waveguide for the electromagnetic radiation, for example, be transparent or translucent with respect to the emitted electromagnetic radiation.

The first electrode is formed as an anode or as a cathode.

The first electrode 210 comprises or is formed from one of the following electrically conductive materials: a metal; a conductive transparent oxide (TCO); a network of metallic nanowires and particles, such as Ag, combined, for example, with conductive polymers; a network of carbon nanotubes combined, for example, with conductive polymers; Graphene particles and layers; a network of semiconducting nanowires; an electrically conductive polymer; a transition metal oxide; and / or their composites. The first electrode 210 consists of a metal or comprises a metal of the following materials: Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials, for example Mo / Al / Mo; Cr / Al / Cr; Ag / Mg, Al. Alternatively or additionally, the first electrode 210 a transparent conductive oxide of the following materials: for example, metal oxides: for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds, such as ZnO, SnO ₂ , or In ₂ O _{3 also} include ternary metal oxygen compounds, such as AlZnO, Zn ₂ SnO ₄ , CdSnO ₃ , ZnSnO ₃ , MgIn ₂ O ₄ , GaInO ₃ , Zn ₂ In ₂ O ₅ or In ₄ Sn ₃ O ₁₂ or mixtures of different transparent conductive oxides to the group of TCOs and can for the first electrode 210 be used. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may furthermore be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).

The first electrode 210 has a layer or a layer stack of multiple layers of the same material or different materials. In a development, the first electrode 210 formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

The first electrode has a layer thickness in a range from 10 nm to 500 nm, for example from less than 25 nm to 250 nm, for example from 50 nm to 100 nm.

The first electrode 210 is with a first electrical connection 218 connected, to which a first electrical potential can be applied. The first electrical potential is provided by a device external power source, for example as illustrated in FIG 6A , For example, a power source or a voltage source. Alternatively, the first electrical potential is applied to an electrically conductive carrier 200 applied and the first electrode 210 through the carrier 200 indirectly supplied electrically. The first electrical potential is, for example, the ground potential or another predetermined reference potential.

The organic functional layer structure 212 has one or more organic functional layer structures, for example 3, 4, 5, 6, 7, 8, 9, 10, or even more, for example 15 or more, for example 70, each of which is the same or different.

The organic functional layered structure unit 212 has a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and an electron injection layer. In the organic functional layer structure unit 212 one or more of said layers may be provided, wherein like layers may have physical contact, may only be electrically connected to each other, or may even be formed electrically insulated from each other, for example, formed side by side. Individual layers of said layers may be optional.

The hole injection layer comprises one or more of the following materials or is formed therefrom: HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, Fl6 CuPc; NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2,2 ', 7,7'-tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9-fluoro; N, N'-bis (phenanthrene-9-yl) -N, N'-bis (phenyl) benzidine; 2,7-bis [N, N-bis (9,9-spiro-bifluorenes-2-yl) amino] -9,9-spiro-bifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene; 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4- (N, N-ditolyl-amino) -phenyl] cyclohexane; 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and / or N, N, N ', N'-tetra-naphthalen-2-yl-benzidine.

The hole injection layer has a layer thickness in a range of about 10 nm to about 1000 nm, for example in a range of about 30 nm to about 300 nm, for example in a range of about 50 nm to about 200 nm.

The hole transport layer comprises or is formed from one or more of the following materials: NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, N'-bis (phenyl) -benzidine); TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) benzidine); Spiro-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -spiro); DMFL-TPD N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); DPFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2,2 ', 7,7'-tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, N'-bis-phenyl-amino) -phenyl] -9-fluoro; N, N'-bis (phenanthrene-9-yl) -N, N'-bis (phenyl) benzidine; 2,7-bis [N, N-bis (9,9-spiro-bifluorenes-2-yl) amino] -9,9-spiro-bifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spiro-bifluorene; 2,2'-bis (N, N-di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4- (N, N-ditolyl-amino) -phenyl] cyclohexane; 2,2 ', 7,7'-tetra (N, N-di-tolyl) amino-spiro-bifluorene; and N, N, N ', N'-tetra-naphthalen-2-yl-benzidine, a tertiary amine, a carbazole derivative, a conductive polyaniline and / or polyethylenedioxythiophene.

The hole transport layer has a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

An emitter layer comprises or is formed from organic polymers, organic oligomers, organic monomers, organic small non-polymeric molecules ("small molecules") or a combination of these materials. The optoelectronic component 400 comprises or is formed from one or more of the following materials in an emitter layer: organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (for example 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium Complexes such as blue phosphorescent FIrPic (bis (3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) iridium III), green phosphorescing Ir (ppy) ₃ (tris (2-phenylpyridine) iridium III ), red phosphorescent Ru (dtb-bpy) ₃ * 2 (PF ₆₎ (tris [4,4'-di-tert-butyl- (2,2 ') - bipyridine] ruthenium (III) complex), and blue fluorescent DPAVBi (4,4-bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9,10-bis [N, N-di- (p-tolyl) -amino] anthracene) and red fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-julolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. It is also possible to use polymer emitters which can be deposited, for example, by means of a wet-chemical process, for example a spin coating process. The emitter materials may be suitably embedded in a matrix material, for example a technical ceramic or a polymer, for example an epoxide; or a silicone.

The emitter layer has single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials. Alternatively, the emitter layer has a plurality of partial layers which emit light of different colors. By means of mixing the different colors, the emission of light results in a white color impression. Alternatively, it is also provided to arrange a phosphor (converter material) in the beam path of the primary emission generated by these layers, which contains the primary radiation at least partially absorbed and emitted a secondary radiation of different wavelengths, so that results from a (not yet white) primary radiation by the combination of primary radiation and secondary radiation, a white color impression.

The emitter layer has a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

The electron transport layer comprises or is formed from one or more of the following materials: NET-18; 2,2 ', 2' '- (1,3,5-Benzinetriyl) -tris (1-phenyl-1-H-benzimidazole); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolines (BCP); 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles; 1,3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1,10-phenanthroline (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazole; Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalen-2-yl) anthracenes; 2,7-bis -9,9-dimethylfluorene [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl]; 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene; 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) borane; 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthroline; Phenyl-dipyrenylphosphine oxides; Naphthalenetetracarboxylic dianhydride or its imides; Perylenetetracarboxylic dianhydride or its imides; and silanol-based materials containing a silacyclopentadiene moiety.

The electron transport layer has a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

The electron injection layer comprises or is formed from one or more of the following materials: NDN-26, MgAg, Cs ₂ CO ₃ , Cs ₃ PO ₄ , Na, Ca, K, Mg, Cs, Li, LiF; 2,2 ', 2''- (1,3,5-Benzinetriyl) -tris (1-phenyl-1-H-benzimidazole); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazoles, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrolines (BCP); 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazoles; 1,3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1,10-phenanthroline (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazoles; Bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalen-2-yl) anthracenes; 2,7-bis -9,9-dimethylfluorene [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl]; 1,3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene; 2- (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline; Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) borane; 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5-f] [1,10] phenanthroline; Phenyl-dipyrenylphosphine oxides; Naphthalenetetracarboxylic dianhydride or its imides; Perylenetetracarboxylic dianhydride or its imides; and silanol-based materials containing a silacyclopentadiene moiety.

The electron injection layer has a layer thickness in a range of about 5 nm to about 200 nm, for example, in a range of about 20 nm to about 50 nm, for example about 30 nm.

For an organic functional layer structure 212 with two or more organic functional layer structure, the second organic functional layer structure unit may be formed over or adjacent to the first functional layer structure units. Electrically between the organic functional layer structure units, an intermediate layer structure is formed.

The interlayer structure is formed as an intermediate electrode, for example, according to one of the configurations of the first electrode 210 , One may be electrically connected to an external voltage source. The external voltage source provides a third electrical potential at the intermediate electrode. Alternatively, however, the intermediate electrode has no external electrical connection, and thus a floating electrical potential.

Alternatively, the interlayer structure is formed as a charge generation layer (CGL) layer structure. A charge carrier pair generation layer structure comprises one or more electron-conducting charge carrier pair generation layer (s) and one or more hole-conducting charge carrier pair generation layer (s). The electron-conductive charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) may each be formed of an intrinsic conductive substance or a dopant in a matrix. The charge carrier pair generation layer structure should be designed with respect to the energy levels of the electron-conducting charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) such that at the interface of an electron-conducting charge carrier pair Generation layer with a hole-conducting carrier pair generation layer, a separation of electron and hole takes place. The carrier pair generation layer structure further has a diffusion barrier between adjacent layers.

The optoelectronic component 400 Optionally, it has further organic functional layers, for example, disposed on or over the one or more emitter layers or on or over the electron transport layer (s). The further organic functional layers can be, for example, internal or external coupling-in / coupling-out structures that increase the functionality and thus the efficiency of the optoelectronic component 400 improve further.

The second electrode 214 is according to one of the embodiments of the first electrode 210 formed, wherein the first electrode 210 and the second electrode 214 may be the same or different. The second electrode 214 is formed as an anode, that is, as a hole-injecting electrode, or as a cathode, that is, as an electron-injecting electrode.

The second electrode 214 has a second electrical connection to which a second electrical potential can be applied. The second electrical potential is provided by the same or a different energy source as the first electrical potential and / or the optional third electrical potential. The second electrical potential is different from the first electrical potential and / or the optionally third electrical potential. For example, the second electric potential has a value such that the difference from the first electric potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.

The barrier thin film 408 is formed according to one of the embodiments of the barrier layer described above.

It should also be pointed out that in embodiments also entirely on a barrier thin film 408 can be dispensed with. In such an embodiment, the encapsulation structure has a further barrier, whereby a barrier thin layer 408 becomes optional, for example, the cover 426 For example, a Kavitätsglasverkapselung or a metallic encapsulation.

Furthermore, one or more input / output coupling layers are additionally provided in the optoelectronic component 400 formed, for example, an external Auskoppelfolie on or above the carrier 200 (not shown) or an internal coupling-out layer (not shown) in the layer cross-section of the optoelectronic component 400 , The input / outcoupling layer has a matrix and scattering centers with respect to the electromagnetic radiation distributed therein, wherein the mean refractive index of the input / outcoupling layer is greater or smaller than the average refractive index of the layer from which the electromagnetic radiation is provided. In addition, one or more antireflection layers (for example combined with the second barrier thin layer 408 ) in the optoelectronic component 400 be provided.

The connection layer 424 is made of an adhesive or a varnish.

A connection layer 424 From a transparent material, for example, has particles that scatter electromagnetic radiation, such as light-scattering particles. This affects the connection layer 424 as a scattering layer and leads to an improvement in the color angle distortion and the coupling-out efficiency.

Dielectric scattering particles may be provided as light-scattering particles, for example of a metal oxide, for example silicon oxide (SiO ₂ ), zinc oxide (ZnO), zirconium oxide (ZrO ₂ ), indium tin oxide (ITO) or indium zinc oxide (IZO), Gallium oxide (Ga ₂ O _x ) alumina, or titanium oxide. Other particles may also be suitable provided they have a refractive index that is greater than the effective refractive index of the matrix of the bonding layer 224 is different, for example, air bubbles, acrylate, or glass bubbles. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles or the like can be provided as light-scattering particles.

The connection layer 424 has a layer thickness of greater than 1 .mu.m, for example, a layer thickness of several microns.

In a development is between the second electrode 214 and the tie layer 224 an electrically insulating layer (not shown) is formed, for example, SiN, for example, with a layer thickness in a range of about 300 nm to about 1.5 microns, for example, with a layer thickness in a range of about 500 nm to about 1 micron to electrically to protect unstable materials, for example during a wet-chemical process.

The connection layer 424 is optional, for example if the cover 426 directly on the second barrier thin film 408 is trained for example, a cover 426 made of glass, which is formed by means of plasma spraying.

Furthermore, the optoelectronic component 400 a so-called getter layer or getter structure, for example, a laterally structured getter layer (not shown). The getter layer comprises or is formed from a material that absorbs and binds substances that are detrimental to the electrically active region, such as water vapor and / or oxygen. For example, a getter layer comprises or is formed from a zeolite derivative. The getter layer has a layer thickness of greater than approximately 1 μm, for example of several μm.

On or above the tie layer 224 is the cover 426 trained or arranged. The cover 426 is by means of the bonding layer 224 with the optically active structure 414 connected and protects it from harmful substances. The cover 426 is for example a glass cover 426 , a metal foil cover 426 or a sealed plastic film cover 426 , The glass cover 426 is for example by means of a frit bonding / glass soldering / seal glass bonding by means of a conventional glass solder in the geometric edge regions of the optoelectronic component 400 connected.

5A to 5C illustrate various developments of the optoelectronic device, which may for example largely correspond to the embodiments shown above.

By means of the lateral structuring of the second electrode 214 with a first area 102 and a second area 104 can be an optoelectronic device 400 be realized, in which optically different, free-standing areas are formed in the radiation-emitting surface, for example, illustrated in 5A to 5C ,

In a development, for example, illustrated in 5A , is a first area 504 formed, which is at least optically translucent; and a second area 502 , which is a first electromagnetic radiation 510 emitted. The translucent first area 504 is from the radiation-emitting second area 502 surrounded such that the first area 504 detached in the second area 502 is trained.

In a development, for example, illustrated in 5B , Shows the optoelectronic component 400 a third area 506 on that a second electromagnetic radiation 520 emitted. The third area 506 is next to the second area 502 arranged and surrounds together with the second area 502 the first area 504 so that it is freestanding. The third area 506 may be formed such that the second electromagnetic radiation 520 in a different direction than the first electromagnetic radiation 510 is emitted, and / or that the second electromagnetic radiation 520 has a different optical property than the first electromagnetic radiation 510 For example, another color location. The second region may appear, for example, reflective and / or opaque in the emission direction of the first electromagnetic radiation. This optoelectronic component 400 for example, can be realized by the second area 502 of the optoelectronic component 400 a layer described above with a second area 102 and the third area 506 of the optoelectronic component 400 a layer described above with a second area 104 having. The layer is in the second area 502 of the optoelectronic component as a second electrode 114 and in the third area 506 of the optoelectronic component 400 as the first electrode 210 educated; and the carrier 200 is at least translucent. As a result, an optoelectronic component 400 be realized that in the radiation-emitting surface a free-standing, transparent first area 504 having, of different radiation-emitting areas 502 . 506 is surrounded.

In a further development, for example illustrated in 5C , is the first area 504 as a fourth region emitting at least partially transparent or translucent electromagnetic radiation 508 educated. As a result, an optoelectronic component can be realized, which in the radiation-emitting surface is a freestanding, translucent or transparent region 508 having, of different radiation emitting areas 502 . 506 is surrounded. This optoelectronic component 400 can be realized, for example, by the fourth area 508 of the optoelectronic component 400 a layer having a first region described above 102 and the second area 502 and the third area 506 of the optoelectronic component 400 a layer having a second region described above 104 exhibit. The layer with a second area 104 is in the second area 502 of the optoelectronic component as the first electrode 210 trained, and in the third area 506 of the optoelectronic component 400 as a second electrode 214 , or the other way around.

6A and 6B illustrate various developments of the optoelectronic device, which may for example largely correspond to the embodiments shown above.

In a further development of the optoelectronic component 400 , for example, illustrated in 6A , are the optoelectronic device units 410 . 420 electrically controllable independently of each other, and as described in more detail above. The optoelectronic component units 410 . 420 are by means of electrical connection lines 608 . 610 . 612 . 614 and by means of a control device 602 with a device-external electrical power source 604 electrically connected. The control device is further provided with a detection device 606 connected, for example, a sensor. This will be an optoelectronic device 400 realized in which, depending on the signal of the detection means 606 the optoelectronic component units 410 . 420 by means of the control device 602 be energized. An arrangement of such optoelectronic components 400 in a room, for example, illustrated in 6B , can be used for a specific illumination of the room.

In a further development, the external electrical energy source 604 an external control, such as Lan / WAN, bus, or an externally controlled power supply.

In a development, the control device 602 designed as a current and / or voltage control.

In a development, the first optoelectronic component unit 420 as a surface light source, and the second optoelectronic component unit 410 as a radiation-determining device, for example as a photodetector for device-external electromagnetic radiation and / or that of the first optoelectronic component unit 420 emitted electromagnetic radiation.

In the in 6B Illustrated application example are in the room 630 steles 620 arranged. A stele 620 has optoelectronic components 400 whose main emission direction is in a first direction 622 show, and optoelectronic devices 400 whose main emission direction is in a second direction 624 show, which is directed in the first direction opposite. The main emission direction may be by means of the second region 104 be given the layer.

The investigative device 606 For example, it may include a motion sensor such that it depends on the movement of a person in the room 630 a stele 620 Light emitted in different directions. As a result, for example, the space in the direction of movement of the person in the room by means of the second optoelectronic component unit 410 be lit up. The area of the room from which the person is standing on the stele 620 moved to, by means of the first optoelectronic component 420 be lit up. Alternatively, the first optoelectronic device unit as a position or night light of the stele 620 be educated.

This results in the advantage of a monolithic structure for the optoelectronic device 400 or for the stele 620 which can be made with reduced mask levels at a reduced cost. The control of the steles 620 allows lighting of the room 630 only where people are.

The invention is not limited to the specified embodiments. By way of example, any desired layers of the optoelectronic component can be formed as a layer having a first region and a second region, in different shapes and dimensions; by means of a deposition process through a mask, an irradiation process through the mask or a removal process through the mask.

Claims (14)

Procedure ( 120 ) for producing an optoelectronic component ( 400 ), the procedure ( 120 ) comprising: • providing ( 130 ) of a substrate ( 100 ), • a training ( 140 ) of a layer on or over the substrate ( 100 ) in a first area ( 102 ) and a second area ( 104 ), the first area ( 102 ) next to the second area ( 104 ) is arranged; and wherein the layer in the first region ( 102 ) and in the second area ( 104 ) is formed at least partially simultaneously, - wherein the layer in the first region ( 102 ) is formed with a first thickness and a textured surface; - wherein the layer in the second area ( 104 ) is formed with a second thickness, wherein the second thickness is greater than the first thickness; and - wherein the layer in the first region ( 102 ) translucent or transparent with respect to visible light and the layer in the second region ( 104 ) are made opaque and / or specular with respect to visible light. Procedure ( 120 ) according to claim 1, further comprising: forming an optically active structure ( 414 ), with at least one electroluminescent layer, wherein the electroluminescent layer for Providing an electromagnetic radiation is formed from an electric current; the first area ( 102 ) and the second area ( 104 ) of the layer in the beam path of the electromagnetic radiation and / or as part of the optically active structure ( 414 ) be formed. Procedure ( 120 ) according to claim 1 or 2, wherein the layer by means of a mask process with a mask ( 108 ) is formed, wherein the mask ( 108 ) a first mask area ( 112 ) and a second mask area ( 114 ), each having at least one opening, wherein the first mask area ( 112 ) from the second mask area ( 114 ) in at least one of the following properties: the arrangement of aperture, the mean spacing of apertures, the size of apertures, the shape of apertures, the number of apertures, the number density of apertures, and / or the area ratio of apertures at the mask area ( 112 . 114 ). Procedure ( 120 ) according to claim 3, wherein the mask ( 108 ) above the substrate ( 100 ) is arranged, that the first mask area ( 112 ) over the first area ( 102 ), and the second mask area ( 114 ) over the second area ( 104 ) are arranged. Procedure ( 120 ) according to claim 3 or 4, wherein the mask ( 108 ) at a distance ( 110 ) above the substrate ( 100 ) is arranged. Procedure ( 120 ) according to one of claims 3 to 5, wherein the mask ( 108 ) a positioning structure ( 202 ) or between the mask ( 108 ) and the substrate ( 100 ) a positioning structure ( 202 ) is arranged. Procedure ( 120 ) according to one of claims 1 to 6, wherein the layer in the first region ( 102 ) and in the second area ( 104 ) using a single mask ( 108 ) is formed. Procedure ( 120 ) according to one of claims 3 to 7, wherein the mask process comprises a vapor deposition of a material ( 106 . 306 ) through the mask ( 108 ), preferably a physical vapor deposition, a chemical vapor deposition, an atomic layer deposition or a molecular layer deposition. Procedure ( 120 ) according to one of claims 3 to 7, wherein the material of the layer or a pre-material of the material of the layer with the second thickness or with a third thickness, which is greater than the second thickness, flat on the substrate ( 100 ) is formed, and the material or the starting material through the mask ( 108 ) is irradiated, preferably by means of an electromagnetic radiation and / or a particle beam. Procedure ( 120 ) according to one of claims 3 to 7, wherein the material of the layer with the second thickness or with a third thickness, which is greater than the second thickness, flat on the substrate ( 100 ) is formed, wherein by means of an etching process, an etching medium through the mask ( 108 ) a part of the layer at least in the first area ( 102 ) away. Optoelectronic component ( 400 ), comprising: an optically active structure ( 414 ) having at least one electroluminescent layer, wherein the electroluminescent layer is configured to provide an electromagnetic radiation from an electric current; and at least one layer with a first region ( 102 ) and a second area ( 104 ), the first area ( 102 ) next to the second area ( 104 ), and the first area ( 102 ) and the second area ( 104 ) are arranged in the beam path of the electromagnetic radiation and / or the layer is a part of the optically active structure ( 414 ); Where the layer in the first area ( 102 ) has a first thickness and a structured surface, and the layer in the second region ( 104 ) has a second thickness, wherein the second thickness is greater than the first thickness, and wherein, with respect to visible light, the first region (FIG. 102 ) is translucent or transparent and the second area ( 104 ) is opaque and / or reflective. Optoelectronic component ( 400 ) according to claim 11, wherein the optoelectronic component ( 400 ) at least one first electrode ( 210 ) and a second electrode ( 214 wherein the layer comprises or is formed from an electrically conductive material, preferably as a first electrode ( 210 ) or second electrode ( 214 ) is trained; and / or wherein the layer comprises or is formed from an optically active material, preferably an electroluminescent and / or photoluminescent material. Optoelectronic component ( 400 ) according to one of claims 11 to 12, wherein by means of the layer in the first region ( 102 ) a first optoelectronic component unit ( 420 ) and in the second area ( 104 ) a second optoelectronic component unit ( 410 ), wherein the first optoelectronic component unit ( 420 ) of the second optoelectronic component unit ( 410 ) differs in at least one optical and / or electronic characteristic. Optoelectronic component ( 400 ) according to any one of claims 11 to 13, wherein the optoelectronic component ( 400 ) as an organic optoelectronic component ( 400 ), preferably as an organic light-emitting diode, an organic photodetector and / or an organic display component.

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