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WO2014027476A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
WO2014027476A1
WO2014027476A1 PCT/JP2013/057260 JP2013057260W WO2014027476A1 WO 2014027476 A1 WO2014027476 A1 WO 2014027476A1 JP 2013057260 W JP2013057260 W JP 2013057260W WO 2014027476 A1 WO2014027476 A1 WO 2014027476A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
translucent member
translucent
sealing
sealing member
Prior art date
Application number
PCT/JP2013/057260
Other languages
French (fr)
Japanese (ja)
Inventor
賢治郎 綾野
伸一 眞▲崎▼
井上　修二
Original Assignee
アオイ電子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アオイ電子株式会社 filed Critical アオイ電子株式会社
Priority to TW102125705A priority Critical patent/TW201409672A/en
Publication of WO2014027476A1 publication Critical patent/WO2014027476A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Definitions

  • the present invention relates to a semiconductor device in which a semiconductor element is sealed with a sealing resin.
  • a semiconductor device in which an insulating sealing resin is filled around a semiconductor element and a translucent member has a problem that the translucent member is easily damaged.
  • a semiconductor device includes a substrate, a semiconductor element mounted on one surface of the substrate and having a functional region formed on the upper surface, and a first stacked on the functional region of the semiconductor element.
  • a sealing member covers the area
  • the semiconductor element has electrodes arranged on the outer periphery of the functional region, and a connection terminal is formed on the one surface, and the electrode The connection terminal is preferably connected by a wire.
  • the upper surface of the sealing member opposite to the one surface is located on the outer side of the vicinity in the vicinity of the first translucent member. Preferably, it is formed lower than the surroundings.
  • the semiconductor element is bonded to the one surface, and the first translucent member is bonded to the semiconductor element. It is preferable.
  • the first light transmissive property is provided on the side opposite to the functional region with respect to the first light transmissive member. It is preferable to further include a second translucent member spaced from the member.
  • the sealing member has a gap on a side of the first light transmissive member facing the second light transmissive member, and the second light transmissive member is supported by the sealing member.
  • the second light-transmissive member is disposed on the sealing member.
  • the surface of the second light transmissive member facing the first light transmissive member is the first light transmissive member.
  • the first translucent member has a larger area than the surface facing the second translucent member.
  • the second translucent member is bonded to the sealing member.
  • an optical filter is formed on the surface of the second translucent member on the gap side.
  • an optical filter is formed on the surface of the first light transmissive member on the semiconductor element side.
  • a transparent substance is provided between the second light transmissive member and the first light transmissive member. Filling is preferred.
  • a peripheral edge portion of the translucent member is formed thinner than a central portion of the translucent member, and the sealing is performed.
  • the stop member preferably covers the entire region of the peripheral edge.
  • a peripheral portion of the translucent member is formed thinner than a central portion of the translucent member, and the sealing is performed.
  • the stop member preferably covers a partial region of the entire thickness of the peripheral edge.
  • the translucent member is not easily damaged.
  • Embodiment 1 of the semiconductor device which concerns on this invention. It is sectional drawing of Embodiment 2 of the semiconductor device which concerns on this invention. It is sectional drawing of Embodiment 3 of the semiconductor device which concerns on this invention. It is sectional drawing of Embodiment 4 of the semiconductor device which concerns on this invention. It is sectional drawing of Embodiment 5 of the semiconductor device which concerns on this invention. It is sectional drawing of Embodiment 6 of the semiconductor device which concerns on this invention.
  • Embodiment 1 In a conventional semiconductor device having a functional region such as an optical sensor, when a translucent member is directly laminated on one surface of a semiconductor element, the upper surface of the encapsulating resin is usually a translucent member. It is formed to a thickness that is substantially flush with the upper surface of the film.
  • Patent Document 1 Japanese Unexamined Patent Publication No. 2011-54925
  • light incident from the peripheral side portion of the translucent member reaches the light receiving portion.
  • a tapered surface is provided on the peripheral edge of the upper surface of the translucent member so as to be difficult.
  • the upper surface of the sealing resin is positioned slightly lower than the upper surface of the translucent member. Also in this semiconductor device, the upper surface of the sealing resin is located in the middle portion of the tapered surface, and is formed to a thickness that covers almost the entire thickness of the translucent member.
  • FIG. 1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention.
  • the semiconductor device 1 includes a circuit board (substrate) 2, a semiconductor element 3, a translucent member 4, and a sealing member 5.
  • the semiconductor element 3 has, for example, a functional region 31 such as a light receiving region on its upper surface, and is die-bonded on one surface of the circuit board 2, that is, on the upper surface 21 with a die bonding material (not shown).
  • a plurality of electrodes 32 are arranged around the functional region 31 of the semiconductor element 3.
  • Each electrode 32 is connected by a wire 6 to a connection terminal 22 formed on the outer surface of the semiconductor element 3 on the upper surface 21 of the circuit board 2.
  • the electrode 32 and the connection terminal 22 are connected by a wire bonding method using a gold wire.
  • wirings constituting a predetermined circuit are formed on the upper surface 21 of the circuit board 2.
  • the translucent member 4 is bonded and laminated by the transparent adhesive layer 7.
  • the translucent member 4 is a plate-like member having a uniform thickness formed of a transparent resin material or glass.
  • the adhesive surface of the translucent member 4 with the functional region 31 through the transparent adhesive layer 7 has a slightly larger area than the functional region 31, and the translucent member 4 covers the entire functional region 31.
  • the sealing member 5 is formed on the upper surface 21 of the circuit board 2 so as to cover the entire semiconductor element 3 and the wires 6.
  • the sealing member 5 covers the entire periphery of the transparent adhesive layer 7 and the periphery of the translucent member 4 to seal the translucent member 4.
  • the important point here is that the sealing member 5 does not seal the entire thickness of the translucent member 4 but seals a shallow region below the lower half of the thickness of the translucent member 4. This is the point.
  • the wire 6 has a maximum height portion (a portion included in the wire 6 and having a maximum height from the upper surface 21 of the circuit board 2) 6a on a slightly outer periphery of the peripheral edge portion of the semiconductor element 3; It is formed in a curved shape that gradually descends from the maximum height portion 6 a toward the electrode 32.
  • the upper surface 51 of the sealing member 5 follows the curved shape of the wire 6 between the electrode 32 and the maximum height portion 6a so as to be lower in the vicinity of the translucent member 4 than the outer periphery in the vicinity thereof.
  • the shape of the sealing member 5 is formed.
  • a semiconductor element 3 is die-bonded on the circuit board 2.
  • the electrode 32 of the semiconductor element 3 and the connection terminal 22 of the circuit board 2 are connected by the wire 6 using a wire bonding method.
  • the translucent member 4 is bonded onto the functional region 31 of the semiconductor element 3 by the transparent adhesive layer 7 and laminated on the functional region 31.
  • a material for the transparent adhesive layer 7 for example, a transparent epoxy resin or silicone resin can be used.
  • a liquid sealing material is applied on the circuit board 2 by a potting method or the like. The sealing material covers the entire semiconductor element 3 and the wire 6, and covers a region of the lower half of the thickness of the translucent member 4. The sealing material may cover only about 10% to 30% of the thickness of the translucent member.
  • sealing resin material for example, epoxy resin or silicone resin can be used.
  • a material in which a filler such as glass fiber is dispersed in a resin is also preferable.
  • the sealing member 5 as illustrated in FIG. 1 is formed by heating and curing the sealing resin.
  • the semiconductor device 1 having the sealing member 5 is formed.
  • An ultraviolet curable resin may be used as the sealing resin material, and the sealing resin material may be cured by irradiating the sealing resin material with ultraviolet rays.
  • the semiconductor device 1 When the semiconductor device 1 is manufactured, a large number of semiconductor devices 1 can be obtained simultaneously from one circuit board 2. In that case, a plurality of semiconductor elements 3 are arranged on one circuit board 2 and the above process is performed in each region where each semiconductor element 3 is mounted, before or after the sealing resin is cured. The circuit board 2 and the sealing member 5 may be cut at the boundary between the semiconductor devices 1.
  • the entire semiconductor element 3 and the wire 6 are covered and sealed by the sealing member 5 to be protected.
  • the translucent member 4 is sealed by bonding a region below the lower half of its thickness with the sealing member 5.
  • the sealing region of the translucent member 4 by the sealing member 5 is a shallow region that is less than or equal to the lower half of the thickness of the translucent member 4. For this reason, the stress which acts on the translucent member 4 due to the difference in the thermal expansion coefficient between the translucent member 4 and the sealing member 5 becomes smaller than before, and the translucent member 4 is damaged. Can be difficult.
  • the upper surface 51 of the sealing member 5 is formed following the curved shape of the wire 6 between the electrode 32 and the maximum height portion 6a. That is, on the upper surface 51 of the sealing member 5, the position corresponding to the maximum height portion 6 a of the wire 6 is higher than the position corresponding to the electrode 32. For this reason, even if the upper surface 51 of the sealing member 5 has a shape that is lower in the vicinity of the translucent member 4 than the outer periphery in the vicinity thereof, the thickness of the sealing member 5 is sufficient to protect the wire 6. It can be a thickness.
  • FIG. 2 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention.
  • the semiconductor device 1 ⁇ / b> A according to the second embodiment includes a first light transmissive member 4 ⁇ / b> A and a second light transmissive member 4 ⁇ / b> B as the two light transmissive members 4.
  • the first translucent member 4A is bonded and laminated on the functional region 31 of the semiconductor element 3 by the transparent adhesive layer 7 as in the first embodiment.
  • the sealing member 5A covers the area of the lower half of the thickness of the first translucent member 4A around the first translucent member 4A.
  • a gap 53 having a shape similar to an inverted truncated pyramid whose area increases upward from a portion covering the periphery of the first light-transmissive member 4A is formed in the central portion of the sealing member 5A.
  • the second translucent member 4B is disposed to face the first translucent member 4A with the gap 53 interposed therebetween. That is, the second light transmissive member 4B is spaced upward from the first light transmissive member 4A (on the side opposite to the functional region 31 with respect to the first light transmissive member 4A).
  • the lower surface of the second light transmissive member 4B facing the first light transmissive member 4A is larger than the upper surface of the first light transmissive member 4A facing the second light transmissive member 4B.
  • Have The second translucent member 4B is disposed in a state where the lower side of the second translucent member 4B is housed in the upper portion of the gap 53 of the sealing member 5A.
  • the upper surface 52 of the sealing member 5A is formed flat.
  • the upper surface 41 of the second translucent member 4B protrudes from the flat upper surface 52 of the sealing member 5A.
  • the lower surface of the second translucent member 4B is separated from the upper surface of the first translucent member 4A.
  • a gap portion 53 that is, a hollow structure portion is formed.
  • the second translucent member 4B is bonded to the sealing member 5A with an adhesive (not shown).
  • the portion not bonded to the sealing member 5A covers the gap 53.
  • FIG. 1 An example of a manufacturing process process of the semiconductor device 1A shown in the second embodiment is shown below.
  • the process from the step of die-bonding the semiconductor element 3 on the circuit board 2 to the step of laminating the first translucent member 4A on the functional region 31 of the semiconductor element 3 is the same as in the first embodiment.
  • the translucent member 4A in the second embodiment corresponds to the translucent member 4 in the first embodiment.
  • a liquid sealing resin material is applied on the circuit board 2 by a potting method or the like.
  • the liquid sealing material is formed so as to cover the entire semiconductor element 3 and the wire 6. This step is the same as in the first embodiment, but the liquid sealing resin is used more than in the first embodiment so that the upper surface of the liquid sealing material is higher than the upper surface of the first translucent member 4A. Apply thick.
  • the liquid sealing resin is pressed from above the first translucent member 4A by a jig (not shown) having the shape of the gap portion 53, and the liquid sealing resin flows around. In this way, the gap 53 is formed in the liquid sealing resin.
  • the liquid sealing resin is cured to form the sealing member 5A.
  • the second translucent member 4B is adhered to the sealing member 5A so that the second translucent member 4B covers the upper portion of the gap 53 of the sealing member 5A. Since the upper surface 52 of the sealing member 5A is at a position lower than the upper surface 41 of the second light transmissive member 4B, not the entire thickness of the outer peripheral side surface of the second light transmissive member 4B, but the second light transmissive member 4B. Only the partial region of the thickness of the outer peripheral side surface of the light-sensitive member 4B is bonded to the sealing member 5A, whereby the second light-transmissive member 4B is supported. The second translucent member 4B is disposed on the sealing member 5A, and a part of the second translucent member 4B is in contact with the gap 53.
  • the second translucent member 4B is not sealed to the sealing member 5A but is bonded to the sealing member 5A. Therefore, as shown in FIG. 2, the outer peripheral side surface of the second light transmissive member 4B may adhere to the sealing member 5A over half the thickness of the second light transmissive member 4B. .
  • the second translucent member 4B is likely to be damaged. In such a case, you may make it adhere
  • FIG. 3 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention.
  • the semiconductor device 1B of the third embodiment also includes the first light transmissive member 4A and the second light transmissive member 4C.
  • the difference between the third embodiment and the second embodiment is that the outer size of the second translucent member 4C is the same as the outer size of the sealing member 5B.
  • the sealing member 5B is formed thinner than the sealing member 5A of the semiconductor device 1A in the second embodiment.
  • the upper surface 52a of the sealing member 5B is formed flat from the vicinity of the gap 53a to the peripheral edge of the semiconductor device 1A.
  • the second translucent member 4C is supported by the sealing member 5B by being bonded to the upper surface 52a of the sealing member 5B.
  • the second translucent member 4C is disposed on the sealing member 5B. Of the lower surface of the second light transmissive member 4C facing the first light transmissive member 4A, the portion not bonded to the sealing member 5B covers the gap 53a.
  • the semiconductor device 1B of the third embodiment can be manufactured by the same method as the semiconductor device 1A of the second embodiment. However, in the case of the third embodiment, after the second light transmissive member 4C is bonded to the sealing member 5B, the second light transmissive member 4C together with the circuit board 2 and the sealing member 5B is attached to the semiconductor device 1B. You may make it cut
  • the second translucent member 4C is a material that is difficult to cut such as glass
  • the circuit board 2 and the sealing member 5B are cut at the peripheral edge of the semiconductor device 1B, and then the second transparent member is cut.
  • the optical member 4C may be bonded to the sealing member 5B.
  • the molding of the shape of the sealing member 5B is simpler than the second embodiment, and the productivity can be improved.
  • the external size of the semiconductor device 1B is small, the external size of the second translucent member 4C is not so large, which is advantageous.
  • the second embodiment is the same as the second embodiment.
  • Embodiment 2 and Embodiment 3 between 1st translucent member 4A and 2nd translucent member 4B, or between 1st translucent member 4A and 2nd translucent member 4C.
  • a hollow structure that is, a gap 53 or 53a is provided between them.
  • the hollow structure portion may be at atmospheric pressure, but may be depressurized. You may fill this hollow structure part with a transparent substance.
  • a getter can be formed in the hollow structure portion to facilitate the securing of reduced pressure. When the substance is not filled, water vapor or the like existing in the hollow structure part may condense due to a temperature change and cloud the light receiving region.
  • the hollow structure part By filling the hollow structure part with a transparent substance, water vapor present in the hollow structure part can be eliminated, so that the light receiving region can be prevented from being clouded by condensation of water vapor.
  • the substance filled in the hollow structure portion include an epoxy resin and an acrylic resin.
  • the optical filter for causing or blocking may be provided in the hollow structure portion.
  • FIG. 4 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention.
  • the semiconductor device 1C of the fourth embodiment has the same structure as the semiconductor device 1A of the second embodiment except that the first wavelength selecting thin film 81 and the second wavelength selecting thin film 82 are formed.
  • the semiconductor device 1C of the fourth embodiment is different from the semiconductor device 1A of the second embodiment in that the first light-transmissive member 4A and the second light-transmissive member 4B are each provided with a first wavelength selection thin film 81.
  • a wavelength selecting thin film (optical filter) such as the second wavelength selecting thin film 82 is formed.
  • the first wavelength selecting thin film 81 is formed on the lower surface of the first light transmissive member 4A, that is, the surface on the semiconductor element 3 side, and the lower surface of the second light transmissive member 4B. That is, the second wavelength selecting thin film 82 is formed on the surface of the hollow structure portion on the side of the gap 53.
  • the first and second wavelength selection thin films 81 and 82 allow only light in a specific range such as infrared rays and ultraviolet rays to reach or block the light receiving unit (the functional region 31 provided on the upper surface of the semiconductor element 3). Or an optical filter.
  • the first wavelength selecting thin film 81 and the second wavelength selecting thin film 82 can be formed by vapor deposition or the like.
  • One or both of the first and second wavelength selecting thin films 81 and 82 may be formed on the upper surface of the first or second translucent member 4A or 4B.
  • the semiconductor device 1 ⁇ / b> C may have only one of the first and second wavelength selecting thin films 81 and 82. Since others are the same as that of Embodiment 2, the same code
  • the first and second wavelength selecting thin films 81 and 82 are formed on one or both of the first and second translucent members 4A and 4C. Also good.
  • FIG. 5 is a sectional view of a semiconductor device according to a fifth embodiment of the present invention.
  • the translucent member is a plate-like member having a uniform thickness.
  • the peripheral portion 4d1 of the translucent member 4D illustrated in FIG. 5 is formed thinner than the central portion 4d2.
  • the thickness of the peripheral portion 4d1 is thicker than half of the thickness of the central portion 4d2, and the sealing member 5 is a region around the peripheral portion 4d1 of the translucent member 4D and below the lower half of the thickness of the peripheral portion 4d1.
  • the translucent member 4D is sealed by covering.
  • the shape of the translucent member 4D is not limited to flat (that is, the translucent member 4D is a plate-like member), and the central portion of the translucent member 4D is curved in a convex or concave shape, or the translucent member 4D. Fine lenses and irregularities may be formed on the upper surface of the substrate. Others are the same as those of the first embodiment, and members corresponding to those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
  • FIG. 6 is a sectional view of a semiconductor device according to a sixth embodiment of the present invention.
  • the peripheral edge of the translucent member is formed thinner than the center.
  • the semiconductor device 1E according to the sixth embodiment is different from the semiconductor device 1D according to the fifth embodiment in that the sealing member 5 covers the entire region of the peripheral edge 4e1 of the translucent member 4E so that the translucent light is transmitted. It is the point which has sealed the property member 4E.
  • the thickness of the peripheral portion 4e1 of the translucent member 4E shown in FIG. 6 is set to be half or less of the thickness of the central portion 4e2.
  • the stress acting on the translucent member 4E due to the difference in the thermal expansion coefficient between the translucent member 4E and the sealing member 5 is higher than that in the past. It becomes small and can make the translucent member 4E hard to be damaged.
  • the semiconductor devices 1 and 1A to 1E are sealed around the translucent members 4 and 4A to 4E stacked on the functional region 31 of the semiconductor element 3. It has the sealing members 5, 5A, and 5B to do.
  • the regions of the translucent members 4, 4A to 4E that are sealed by the sealing member 5 are shallow regions that are less than the lower half of the thickness of the translucent members 4 and 4A to 4E. Therefore, the stress acting on the translucent members 4, 4A to 4E due to the difference in thermal expansion coefficient between the sealing tree members 5, 5A and 5B and the translucent members 4, 4A to 4E is reduced. It is possible to make the translucent members 4, 4A to 4E difficult to break.
  • the upper surface 51 of the sealing member 5 has a shape that is low in the vicinity of the translucent member 4 and is high at a position corresponding to the maximum height portion 6 a of the wire 6. For this reason, even if the upper surface 51 of the sealing member 5 has a shape lower than the outer periphery in the vicinity of the translucent member 4, the sealing has a sufficient thickness to protect the wire 6. The member 5 is obtained.
  • the first and second translucent members 4A and 4B (or 4C) are arranged on the circuit board 2, and the first and second translucent members are disposed.
  • a hollow structure portion that is, a gap portion 53, 53a can be formed between 4A, 4B (or 4C).
  • a getter can be formed in the hollow structure portion to facilitate the securing of reduced pressure.
  • the function of the optical filter may be provided in the hollow structure part by dispersing pigments or dyes in the hollow structure part.
  • the wavelength selecting thin films 81 and 82 are formed on one surface of the first and second translucent members 4A and 4B, so that the function of the optical filter is reduced. May be provided.
  • the structure in which the semiconductor element 3 and the circuit board 2 are connected by wire bonding is exemplified.
  • other bonding methods such as flip chip bonding can be applied as bonding between the semiconductor element 3 and the circuit board 2.
  • the functional region 31 of the semiconductor element 3 is exemplified as the light receiving region, but the present invention can also be applied to the semiconductor element 3 having a function other than light reception such as light emission.
  • the semiconductor device of the present invention is not limited to these contents.
  • the embodiments described above can be combined or modified in various ways within the scope of the spirit of the invention, and other aspects conceivable within the scope of the technical idea of the present invention are also possible. Included in range.
  • the encapsulating member covers the area below the lower half of the thickness of the translucent member to seal the translucent member Anything can be used.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

This semiconductor device includes: a substrate; a semiconductor element mounted on one surface of the substrate and having a functional region formed on an upper surface; a first translucent member layered on the functional region of the semiconductor element; and a sealing member, formed on one surface of the substrate, for covering the circumference of the semiconductor element and the circumference of the first translucent member and thereby sealing the first translucent member. The sealing member covers a region no greater than the lower half the thickness of the first translucent member.

Description

半導体デバイスSemiconductor device
　本発明は、半導体素子が封止樹脂により封止された半導体デバイスに関する。 The present invention relates to a semiconductor device in which a semiconductor element is sealed with a sealing resin.
　光学センサ等の機能領域を有する半導体デバイスにおいては、電子機器の小型化に伴い、小型化および薄型化が図られており、最近では、半導体素子の一面上に透光性部材を直接的に積層する構造が、検討されている。この構造では、半導体素子と透光性部材の周囲とに絶縁性の封止樹脂を充填する方式が採用されている（特許文献１参照）。 In semiconductor devices having functional areas such as optical sensors, electronic devices have been downsized and thinned, and recently, a light-transmitting member is directly laminated on one surface of a semiconductor element. The structure to be studied is being studied. In this structure, a method of filling an insulating sealing resin around the semiconductor element and the translucent member is employed (see Patent Document 1).
日本国特開２０１１－５４９２５号公報Japanese Unexamined Patent Publication No. 2011-54925
　半導体素子と透光性部材の周囲とに絶縁性の封止樹脂を充填した半導体デバイスには、透光性部材が破損しやすいという問題がある。 A semiconductor device in which an insulating sealing resin is filled around a semiconductor element and a translucent member has a problem that the translucent member is easily damaged.
　本発明の第１の態様によると、半導体デバイスは、基板と、基板の一面上に搭載され、上面に機能領域が形成された半導体素子と、半導体素子の機能領域上に積層された第１の透光性部材と、基板の一面上に形成され、半導体素子の周囲および第１の透光性部材の周囲を覆うことによって第１の透光性部材を封止する封止部材とを含む。封止部材は第１の透光性部材の厚さの下半分以下の領域を覆う。
　本発明の第２の態様によると、第１の態様の半導体デバイスにおいて、前記半導体素子は、前記機能領域の外周に配列された電極を有し、前記一面には接続端子が形成され、前記電極と前記接続端子とはワイヤにより接続されるのが好ましい。
　本発明の第３の態様によると、第２の態様の半導体デバイスにおいて、前記封止部材の前記一面とは反対側の上面は、前記第１の透光性部材の近傍において前記近傍の外側の周囲よりも低く形成されるのが好ましい。
　本発明の第４の態様によると、第１～第３のいずれかの態様の半導体デバイスにおいて、前記半導体素子は前記一面にボンディングされ、前記第１の透光性部材は前記半導体素子に接着されるのが好ましい。
　本発明の第５の態様によると、第１～第４のいずれかの態様の半導体デバイスにおいて、前記第１の透光性部材に関して前記機能領域とは反対側に、前記第１の透光性部材から離間した第２の透光性部材をさらに備えるのが好ましい。前記封止部材は、前記第１の透光性部材の前記第２の透光性部材に面する側に空隙を有し、前記第２の透光性部材は、前記封止部材に支持されて設けられる。
　本発明の第６の態様によると、第５の態様の半導体デバイスにおいて、前記第２の透光性部材の一部が前記空隙を覆うのが好ましい。
　本発明の第７の態様によると、第５の態様の半導体デバイスにおいて、前記第２の透光性部材は、前記封止部材上に配置されるのが好ましい。
　本発明の第８の態様によると、第５～第７のいずれかの態様の半導体デバイスにおいて、前記第２の透光性部材の前記第１の透光性部材に面する面は、前記第１の透光性部材の前記第２の透光性部材に面する面よりも大きい面積を有する。
　本発明の第９の態様によると、第５～第８のいずれかの態様の半導体デバイスにおいて、前記第２の透光性部材は前記封止部材に接着されるのが好ましい。
　本発明の第１０の態様によると、第５～第９のいずれかの態様の半導体デバイスにおいて、前記第２の透光性部材の前記空隙側の面に光学的フィルタが形成されるのが好ましい。
　本発明の第１１の態様によると、第１０の態様の半導体デバイスにおいて、前記第１の透光性部材の前記半導体素子側の面に光学的フィルタが形成されるのが好ましい。
　本発明の第１２の態様によると、第５～第９のいずれかの態様の半導体デバイスにおいて、前記第２の透光性部材と前記第１の透光性部材との間に透明な物質が充填されるのが好ましい。
　本発明の第１３の態様によると、第１～第４のいずれかの態様の半導体デバイスにおいて、前記透光性部材の周縁部が前記透光性部材の中央部よりも薄く形成され、前記封止部材は、前記周縁部の厚さ全体の領域を覆うのが好ましい。
　本発明の第１４の態様によると、第１～第４のいずれかの態様の半導体デバイスにおいて、前記透光性部材の周縁部が前記透光性部材の中央部よりも薄く形成され、前記封止部材は、前記周縁部の厚さ全体の一部の領域を覆うのが好ましい。 According to the first aspect of the present invention, a semiconductor device includes a substrate, a semiconductor element mounted on one surface of the substrate and having a functional region formed on the upper surface, and a first stacked on the functional region of the semiconductor element. A translucent member; and a sealing member that is formed on one surface of the substrate and seals the first translucent member by covering the periphery of the semiconductor element and the periphery of the first translucent member. A sealing member covers the area | region below the lower half of the thickness of the 1st translucent member.
According to a second aspect of the present invention, in the semiconductor device of the first aspect, the semiconductor element has electrodes arranged on the outer periphery of the functional region, and a connection terminal is formed on the one surface, and the electrode The connection terminal is preferably connected by a wire.
According to a third aspect of the present invention, in the semiconductor device according to the second aspect, the upper surface of the sealing member opposite to the one surface is located on the outer side of the vicinity in the vicinity of the first translucent member. Preferably, it is formed lower than the surroundings.
According to a fourth aspect of the present invention, in the semiconductor device according to any one of the first to third aspects, the semiconductor element is bonded to the one surface, and the first translucent member is bonded to the semiconductor element. It is preferable.
According to a fifth aspect of the present invention, in the semiconductor device according to any one of the first to fourth aspects, the first light transmissive property is provided on the side opposite to the functional region with respect to the first light transmissive member. It is preferable to further include a second translucent member spaced from the member. The sealing member has a gap on a side of the first light transmissive member facing the second light transmissive member, and the second light transmissive member is supported by the sealing member. Provided.
According to a sixth aspect of the present invention, in the semiconductor device according to the fifth aspect, it is preferable that a part of the second translucent member covers the gap.
According to a seventh aspect of the present invention, in the semiconductor device according to the fifth aspect, it is preferable that the second light-transmissive member is disposed on the sealing member.
According to an eighth aspect of the present invention, in the semiconductor device according to any one of the fifth to seventh aspects, the surface of the second light transmissive member facing the first light transmissive member is the first light transmissive member. The first translucent member has a larger area than the surface facing the second translucent member.
According to a ninth aspect of the present invention, in the semiconductor device according to any one of the fifth to eighth aspects, it is preferable that the second translucent member is bonded to the sealing member.
According to the tenth aspect of the present invention, in the semiconductor device according to any one of the fifth to ninth aspects, it is preferable that an optical filter is formed on the surface of the second translucent member on the gap side. .
According to an eleventh aspect of the present invention, in the semiconductor device according to the tenth aspect, it is preferable that an optical filter is formed on the surface of the first light transmissive member on the semiconductor element side.
According to a twelfth aspect of the present invention, in the semiconductor device according to any one of the fifth to ninth aspects, a transparent substance is provided between the second light transmissive member and the first light transmissive member. Filling is preferred.
According to a thirteenth aspect of the present invention, in the semiconductor device according to any one of the first to fourth aspects, a peripheral edge portion of the translucent member is formed thinner than a central portion of the translucent member, and the sealing is performed. The stop member preferably covers the entire region of the peripheral edge.
According to a fourteenth aspect of the present invention, in the semiconductor device according to any one of the first to fourth aspects, a peripheral portion of the translucent member is formed thinner than a central portion of the translucent member, and the sealing is performed. The stop member preferably covers a partial region of the entire thickness of the peripheral edge.
　本発明によれば、透光性部材が破損しにくい。 According to the present invention, the translucent member is not easily damaged.
本発明に係る半導体デバイスの実施形態１の断面図である。It is sectional drawing of Embodiment 1 of the semiconductor device which concerns on this invention. 本発明に係る半導体デバイスの実施形態２の断面図である。It is sectional drawing of Embodiment 2 of the semiconductor device which concerns on this invention. 本発明に係る半導体デバイスの実施形態３の断面図である。It is sectional drawing of Embodiment 3 of the semiconductor device which concerns on this invention. 本発明に係る半導体デバイスの実施形態４の断面図である。It is sectional drawing of Embodiment 4 of the semiconductor device which concerns on this invention. 本発明に係る半導体デバイスの実施形態５の断面図である。It is sectional drawing of Embodiment 5 of the semiconductor device which concerns on this invention. 本発明に係る半導体デバイスの実施形態６の断面図である。It is sectional drawing of Embodiment 6 of the semiconductor device which concerns on this invention.
－実施形態１－
　光学センサ等の機能領域を有する従来の半導体デバイスにおいて、半導体素子の一面上に透光性部材を直接的に積層する場合、通常、封止樹脂は、その封止樹脂の上面が透光性部材の上面とほぼ同一面となる厚さに形成される。 Embodiment 1
In a conventional semiconductor device having a functional region such as an optical sensor, when a translucent member is directly laminated on one surface of a semiconductor element, the upper surface of the encapsulating resin is usually a translucent member. It is formed to a thickness that is substantially flush with the upper surface of the film.
　特許文献１（日本国特開２０１１－５４９２５号公報）に記載された固体撮像素子のような光学素子を有する半導体デバイスにおいては、透光性部材の周側部から入射する光が受光部に届きにくくなるように、透光性部材の上面周縁部にテーパ面を設けている。この半導体デバイスにおいては、封止樹脂の上面が、透光性部材の上面より少し低い位置にしている。この半導体デバイスにおいても、封止樹脂の上面はテーパ面の中間部に位置しており、ほぼ、透光性部材の厚さ全体を覆う厚さに形成されている。 In a semiconductor device having an optical element such as a solid-state imaging device described in Patent Document 1 (Japanese Unexamined Patent Publication No. 2011-54925), light incident from the peripheral side portion of the translucent member reaches the light receiving portion. A tapered surface is provided on the peripheral edge of the upper surface of the translucent member so as to be difficult. In this semiconductor device, the upper surface of the sealing resin is positioned slightly lower than the upper surface of the translucent member. Also in this semiconductor device, the upper surface of the sealing resin is located in the middle portion of the tapered surface, and is formed to a thickness that covers almost the entire thickness of the translucent member.
　透光性部材の周縁部の厚さのほぼ全体を封止樹脂で覆う従来の構造では、封止樹脂と透光性部材との熱膨張係数の相違に起因する大きな応力が透光性部材に作用し、透光性部材が破損する可能性が大きい。 In the conventional structure in which the entire thickness of the peripheral portion of the translucent member is covered with the sealing resin, a large stress due to the difference in thermal expansion coefficient between the sealing resin and the translucent member is applied to the translucent member. It acts, and there is a high possibility that the translucent member is damaged.
　以下、本発明の半導体デバイスの実施形態１を図面と共に説明する。図１は、本発明の半導体デバイスの実施形態１の断面図である。半導体デバイス１は、回路基板（基板）２と、半導体素子３と、透光性部材４と、封止部材５とを有する。半導体素子３は、その上面に、例えば、受光領域などの機能領域３１等を有し、回路基板２の一面、すなわち上面２１上に、不図示のダイボンド材によってダイボンディングされている。半導体素子３の機能領域３１の周囲には、複数の電極３２が配列されている。各電極３２は、回路基板２の上面２１上において半導体素子３の外周に配列して形成された接続端子２２に、ワイヤ６によって接続されている。電極３２と接続端子２２とは、金ワイヤを用いたワイヤボンディング法によって接続される。図示はしないが、回路基板２の上面２１には、所定の回路を構成する配線が形成されている。 Hereinafter, a semiconductor device according to a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention. The semiconductor device 1 includes a circuit board (substrate) 2, a semiconductor element 3, a translucent member 4, and a sealing member 5. The semiconductor element 3 has, for example, a functional region 31 such as a light receiving region on its upper surface, and is die-bonded on one surface of the circuit board 2, that is, on the upper surface 21 with a die bonding material (not shown). A plurality of electrodes 32 are arranged around the functional region 31 of the semiconductor element 3. Each electrode 32 is connected by a wire 6 to a connection terminal 22 formed on the outer surface of the semiconductor element 3 on the upper surface 21 of the circuit board 2. The electrode 32 and the connection terminal 22 are connected by a wire bonding method using a gold wire. Although not shown, wirings constituting a predetermined circuit are formed on the upper surface 21 of the circuit board 2.
　半導体素子３の機能領域３１上には、透光性部材４が、透明接着剤層７によって接着されて積層されている。透光性部材４は、透明な樹脂材料またはガラスによって形成された、厚さが均一な板状部材である。透明接着剤層７を介した透光性部材４の機能領域３１との接着面は機能領域３１よりも少し大きい面積を有し、透光性部材４が機能領域３１全体を覆っている。 On the functional area 31 of the semiconductor element 3, the translucent member 4 is bonded and laminated by the transparent adhesive layer 7. The translucent member 4 is a plate-like member having a uniform thickness formed of a transparent resin material or glass. The adhesive surface of the translucent member 4 with the functional region 31 through the transparent adhesive layer 7 has a slightly larger area than the functional region 31, and the translucent member 4 covers the entire functional region 31.
　封止部材５は、回路基板２の上面２１上において、半導体素子３およびワイヤ６の全体を覆って形成されている。封止部材５は、透明接着剤層７の周囲全体、および透光性部材４の周囲を覆って透光性部材４を封止している。ここで重要な点は、封止部材５は、透光性部材４の厚さ全体を封止しているのではなく、透光性部材４の厚さの下半分以下の浅い領域を封止している点である。 The sealing member 5 is formed on the upper surface 21 of the circuit board 2 so as to cover the entire semiconductor element 3 and the wires 6. The sealing member 5 covers the entire periphery of the transparent adhesive layer 7 and the periphery of the translucent member 4 to seal the translucent member 4. The important point here is that the sealing member 5 does not seal the entire thickness of the translucent member 4 but seals a shallow region below the lower half of the thickness of the translucent member 4. This is the point.
　ワイヤ６は、半導体素子３の周縁部の少し外周に最大高さ部（ワイヤ６に含まれる部分であって、回路基板２の上面２１からの高さが最大となる部分）６ａを有し、最大高さ部６ａから電極３２に向かって漸次下降する湾曲状に形成されている。封止部材５の上面５１が、電極３２と最大高さ部６ａとの間のワイヤ６の湾曲形状に倣って、透光性部材４の近傍においてその近傍の外側の周囲よりも低くなるように、封止部材５の形状が形成されている。 The wire 6 has a maximum height portion (a portion included in the wire 6 and having a maximum height from the upper surface 21 of the circuit board 2) 6a on a slightly outer periphery of the peripheral edge portion of the semiconductor element 3; It is formed in a curved shape that gradually descends from the maximum height portion 6 a toward the electrode 32. The upper surface 51 of the sealing member 5 follows the curved shape of the wire 6 between the electrode 32 and the maximum height portion 6a so as to be lower in the vicinity of the translucent member 4 than the outer periphery in the vicinity thereof. The shape of the sealing member 5 is formed.
　このような、半導体デバイス１の製造工程処理の一例を下記に示す。回路基板２上に半導体素子３をダイボンディングする。半導体素子３の電極３２と回路基板２の接続端子２２とを、ワイヤボンディング法を用いてワイヤ６によって接続する。透光性部材４を、透明接着剤層７によって半導体素子３の機能領域３１上に接着して、機能領域３１上に積層する。透明接着剤層７の材料として、例えば、透明なエポキシ樹脂またはシリコーン樹脂を用いることができる。回路基板２上に、液状の封止材料を、ポッティング法等によって塗布する。封止材料は、半導体素子３およびワイヤ６全体を覆い、かつ、透光性部材４の厚さの下半分以下の領域を覆う。封止材料は、透光性部材の厚さの１割～３割程度を覆う程度としてもよい。 An example of the manufacturing process of the semiconductor device 1 is shown below. A semiconductor element 3 is die-bonded on the circuit board 2. The electrode 32 of the semiconductor element 3 and the connection terminal 22 of the circuit board 2 are connected by the wire 6 using a wire bonding method. The translucent member 4 is bonded onto the functional region 31 of the semiconductor element 3 by the transparent adhesive layer 7 and laminated on the functional region 31. As a material for the transparent adhesive layer 7, for example, a transparent epoxy resin or silicone resin can be used. A liquid sealing material is applied on the circuit board 2 by a potting method or the like. The sealing material covers the entire semiconductor element 3 and the wire 6, and covers a region of the lower half of the thickness of the translucent member 4. The sealing material may cover only about 10% to 30% of the thickness of the translucent member.
　封止樹脂材料としては、例えば、エポキシ樹脂、シリコーン樹脂を用いることができる。樹脂中にガラス繊維などのフィラを分散した材料も好ましい。封止樹脂を、加熱して硬化させることによって、図１に図示されるような封止部材５が形成される。その封止部材５を有する半導体デバイス１が形成される。封止樹脂材料として紫外線硬化型樹脂を用い、その封止樹脂材料に紫外線を照射してその封止樹脂材料を硬化させるようにしてもよい。 As the sealing resin material, for example, epoxy resin or silicone resin can be used. A material in which a filler such as glass fiber is dispersed in a resin is also preferable. The sealing member 5 as illustrated in FIG. 1 is formed by heating and curing the sealing resin. The semiconductor device 1 having the sealing member 5 is formed. An ultraviolet curable resin may be used as the sealing resin material, and the sealing resin material may be cured by irradiating the sealing resin material with ultraviolet rays.
　半導体デバイス１を製造する場合、１枚の回路基板２から、多数の半導体デバイス１を同時に得るようにすることもできる。その場合には、１枚の回路基板２に複数の半導体素子３を配列し、各半導体素子３が搭載された各領域において上記工程処理を行い、封止樹脂が硬化する前、または硬化した後、回路基板２および封止部材５を各半導体デバイス１の境界で切断すればよい。 When the semiconductor device 1 is manufactured, a large number of semiconductor devices 1 can be obtained simultaneously from one circuit board 2. In that case, a plurality of semiconductor elements 3 are arranged on one circuit board 2 and the above process is performed in each region where each semiconductor element 3 is mounted, before or after the sealing resin is cured. The circuit board 2 and the sealing member 5 may be cut at the boundary between the semiconductor devices 1.
　上記実施形態において、半導体素子３およびワイヤ６は、その全体が封止部材５に覆われて封止され、保護される。透光性部材４は、その厚さの下半分以下の領域が封止部材５により接着されて、封止される。封止部材５による透光性部材４の封止領域は、透光性部材４の厚さの下半分以下の浅い領域である。このため、透光性部材４と封止部材５との熱膨張係数の相違に起因して透光性部材４に作用する応力は、従来よりも小さくなり、透光性部材４を、破損しにくくすることができる。 In the above embodiment, the entire semiconductor element 3 and the wire 6 are covered and sealed by the sealing member 5 to be protected. The translucent member 4 is sealed by bonding a region below the lower half of its thickness with the sealing member 5. The sealing region of the translucent member 4 by the sealing member 5 is a shallow region that is less than or equal to the lower half of the thickness of the translucent member 4. For this reason, the stress which acts on the translucent member 4 due to the difference in the thermal expansion coefficient between the translucent member 4 and the sealing member 5 becomes smaller than before, and the translucent member 4 is damaged. Can be difficult.
　上記実施形態において、封止部材５の上面５１は、電極３２と最大高さ部６ａとの間のワイヤ６の湾曲形状に倣って形成されている。すなわち、封止部材５の上面５１において、ワイヤ６の最大高さ部６ａに対応する位置が、電極３２に対応する位置よりも高い。このため、封止部材５の上面５１が、透光性部材４の近傍においてその近傍の外側の周囲よりも低くなる形状としても、封止部材５の厚さを、ワイヤ６を保護する十分な厚さとすることができる。 In the above embodiment, the upper surface 51 of the sealing member 5 is formed following the curved shape of the wire 6 between the electrode 32 and the maximum height portion 6a. That is, on the upper surface 51 of the sealing member 5, the position corresponding to the maximum height portion 6 a of the wire 6 is higher than the position corresponding to the electrode 32. For this reason, even if the upper surface 51 of the sealing member 5 has a shape that is lower in the vicinity of the translucent member 4 than the outer periphery in the vicinity thereof, the thickness of the sealing member 5 is sufficient to protect the wire 6. It can be a thickness.
　なお、本発明に係る半導体デバイスとしては、以下に示すように、種々の実施形態を採用することが可能である。 As the semiconductor device according to the present invention, various embodiments can be adopted as described below.
－実施形態２－
　図２は、本発明に係る半導体デバイスの実施形態２の断面図である。実施形態２の半導体デバイス１Ａは、２つの透光性部材４として、第１の透光性部材４Ａおよび第２の透光性部材４Ｂを有している。 Embodiment 2
FIG. 2 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention. The semiconductor device 1 </ b> A according to the second embodiment includes a first light transmissive member 4 </ b> A and a second light transmissive member 4 </ b> B as the two light transmissive members 4.
　第１の透光性部材４Ａは、実施形態１と同様、半導体素子３の機能領域３１上に、透明接着剤層７によって接着されて積層されている。封止部材５Ａは、第１の透光性部材４Ａの周囲に、第１の透光性部材４Ａの厚さの下半分以下の領域を覆っている。封止部材５Ａの中央部には、第１の透光性部材４Ａの周囲を覆う部分から上方に向けて面積が拡大する逆角錐台形に似た形状の空隙部５３が形成されている。 The first translucent member 4A is bonded and laminated on the functional region 31 of the semiconductor element 3 by the transparent adhesive layer 7 as in the first embodiment. The sealing member 5A covers the area of the lower half of the thickness of the first translucent member 4A around the first translucent member 4A. A gap 53 having a shape similar to an inverted truncated pyramid whose area increases upward from a portion covering the periphery of the first light-transmissive member 4A is formed in the central portion of the sealing member 5A.
　第２の透光性部材４Ｂは、空隙部５３を挟んで第１の透光性部材４Ａに面して配置される。すなわち、第２の透光性部材４Ｂは、第１の透光性部材４Ａから上方（第１の透光性部材４Ａに関して機能領域３１とは反対側）に離間している。第２の透光性部材４Ｂの、第１の透光性部材４Ａに面する下面は、第１の透光性部材４Ａの、第２の透光性部材４Ｂに面する上面よりも大きい面積を有する。第２の透光性部材４Ｂの下部側が封止部材５Ａの空隙部５３の上部に収納された状態で、第２の透光性部材４Ｂが配置されている。封止部材５Ａは上面５２が平坦に形成されている。第２の透光性部材４Ｂの上面４１は、封止部材５Ａの平坦な上面５２から突出している。第２の透光性部材４Ｂの下面は第１の透光性部材４Ａの上面から離間している。第２の透光性部材４Ｂと第１の透光性部材４Ａとの間には空隙部５３、すなわち中空構造部が形成されている。この状態で、第２の透光性部材４Ｂは、封止部材５Ａに不図示の接着剤により接着されている。第２の透光性部材４Ｂの下面のうち、封止部材５Ａに接着していない部分は、空隙部５３を覆っている。 The second translucent member 4B is disposed to face the first translucent member 4A with the gap 53 interposed therebetween. That is, the second light transmissive member 4B is spaced upward from the first light transmissive member 4A (on the side opposite to the functional region 31 with respect to the first light transmissive member 4A). The lower surface of the second light transmissive member 4B facing the first light transmissive member 4A is larger than the upper surface of the first light transmissive member 4A facing the second light transmissive member 4B. Have The second translucent member 4B is disposed in a state where the lower side of the second translucent member 4B is housed in the upper portion of the gap 53 of the sealing member 5A. The upper surface 52 of the sealing member 5A is formed flat. The upper surface 41 of the second translucent member 4B protrudes from the flat upper surface 52 of the sealing member 5A. The lower surface of the second translucent member 4B is separated from the upper surface of the first translucent member 4A. Between the second light transmissive member 4B and the first light transmissive member 4A, a gap portion 53, that is, a hollow structure portion is formed. In this state, the second translucent member 4B is bonded to the sealing member 5A with an adhesive (not shown). Of the lower surface of the second translucent member 4B, the portion not bonded to the sealing member 5A covers the gap 53.
　実施形態２に示す半導体デバイス１Ａの製造工程処理の一例を以下に示す。回路基板２上に半導体素子３をダイボンドする工程から、第１の透光性部材４Ａを半導体素子３の機能領域３１上に積層する工程までは、実施形態１と同様である。但し、実施形態２における透光性部材４Ａは、実施形態１における透光性部材４に対応する。 An example of a manufacturing process process of the semiconductor device 1A shown in the second embodiment is shown below. The process from the step of die-bonding the semiconductor element 3 on the circuit board 2 to the step of laminating the first translucent member 4A on the functional region 31 of the semiconductor element 3 is the same as in the first embodiment. However, the translucent member 4A in the second embodiment corresponds to the translucent member 4 in the first embodiment.
　回路基板２上に、液状封止樹脂材料を、ポッティング法等によって塗布する。液状封止材料は、半導体素子３およびワイヤ６全体を覆うように形成される。この工程は、実施形態１と同様であるが、液状封止材料の上面が、第１の透光性部材４Ａの上面よりも高くなるように、実施形態１の場合よりも液状封止樹脂を厚く塗布する。 A liquid sealing resin material is applied on the circuit board 2 by a potting method or the like. The liquid sealing material is formed so as to cover the entire semiconductor element 3 and the wire 6. This step is the same as in the first embodiment, but the liquid sealing resin is used more than in the first embodiment so that the upper surface of the liquid sealing material is higher than the upper surface of the first translucent member 4A. Apply thick.
　空隙部５３の形状を有する治具（図示せず）によって、第１の透光性部材４Ａの上方から液状封止樹脂を押圧し、液状封止樹脂を周囲に流動させる。このようにして、液状封止樹脂に空隙部５３を形成する。液状封止樹脂を硬化させて封止部材５Ａを形成する。 The liquid sealing resin is pressed from above the first translucent member 4A by a jig (not shown) having the shape of the gap portion 53, and the liquid sealing resin flows around. In this way, the gap 53 is formed in the liquid sealing resin. The liquid sealing resin is cured to form the sealing member 5A.
　この後、第２の透光性部材４Ｂが封止部材５Ａの空隙部５３の上部を覆うように、第２の透光性部材４Ｂを封止部材５Ａに接着させる。封止部材５Ａの上面５２は、第２の透光性部材４Ｂの上面４１よりも低い位置にあるので、第２の透光性部材４Ｂの外周側面の厚さ全体ではなく、第２の透光性部材４Ｂの外周側面の厚さの一部の領域のみが封止部材５Ａに接着されることによって、第２の透光性部材４Ｂが支持される。第２の透光性部材４Ｂは封止部材５Ａ上に配置され、第２の透光性部材４Ｂの一部は空隙部５３に接している。 Thereafter, the second translucent member 4B is adhered to the sealing member 5A so that the second translucent member 4B covers the upper portion of the gap 53 of the sealing member 5A. Since the upper surface 52 of the sealing member 5A is at a position lower than the upper surface 41 of the second light transmissive member 4B, not the entire thickness of the outer peripheral side surface of the second light transmissive member 4B, but the second light transmissive member 4B. Only the partial region of the thickness of the outer peripheral side surface of the light-sensitive member 4B is bonded to the sealing member 5A, whereby the second light-transmissive member 4B is supported. The second translucent member 4B is disposed on the sealing member 5A, and a part of the second translucent member 4B is in contact with the gap 53.
　第２の透光性部材４Ｂは、封止部材５Ａに封止されるのではなく、封止部材５Ａに接着される構造である。そのため、図２に図示されるように、第２の透光性部材４Ｂの厚さの半分以上に亘り、第２の透光性部材４Ｂの外周側面が封止部材５Ａに接着してもよい。第２の透光性部材４Ｂの材料によっては、第２の透光性部材４Ｂが破損する可能性が大きい場合がある。そのような場合であれば、第２の透光性部材４Ｂの厚さの下半分以下の領域を封止部材５Ａに接着するようにしてもよい。 The second translucent member 4B is not sealed to the sealing member 5A but is bonded to the sealing member 5A. Therefore, as shown in FIG. 2, the outer peripheral side surface of the second light transmissive member 4B may adhere to the sealing member 5A over half the thickness of the second light transmissive member 4B. . Depending on the material of the second translucent member 4B, there is a possibility that the second translucent member 4B is likely to be damaged. In such a case, you may make it adhere | attach the area | region below the lower half of the thickness of the 2nd translucent member 4B to the sealing member 5A.
－実施形態３－
　図３は、本発明に係る半導体デバイスの実施形態３の断面図である。実施形態３の半導体デバイス１Ｂも、実施形態２の半導体デバイス１Ａと同様、第１の透光性部材４Ａと第２の透光性部材４Ｃとを有する。実施形態３が実施形態２と相違する点は、第２の透光性部材４Ｃの外形サイズが封止部材５Ｂの外形サイズと同一であることである。 Embodiment 3
FIG. 3 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention. Similarly to the semiconductor device 1A of the second embodiment, the semiconductor device 1B of the third embodiment also includes the first light transmissive member 4A and the second light transmissive member 4C. The difference between the third embodiment and the second embodiment is that the outer size of the second translucent member 4C is the same as the outer size of the sealing member 5B.
　実施形態３における半導体デバイス１Ｂにおいては、封止部材５Ｂは、第２実施形態の半導体デバイス１Ａの封止部材５Ａより薄く形成される。封止部材５Ｂの上面５２ａは、空隙部５３ａの近傍から半導体デバイス１Ａの周縁部まで全体に亘り平坦に形成されている。第２の透光性部材４Ｃは、封止部材５Ｂの上面５２ａに接着されることによって、封止部材５Ｂに支持されている。第２の透光性部材４Ｃは封止部材５Ｂ上に配置される。第２の透光性部材４Ｃの第１の透光性部材４Ａに面する下面のうち、封止部材５Ｂに接着していない部分は、空隙部５３ａを覆っている。 In the semiconductor device 1B in the third embodiment, the sealing member 5B is formed thinner than the sealing member 5A of the semiconductor device 1A in the second embodiment. The upper surface 52a of the sealing member 5B is formed flat from the vicinity of the gap 53a to the peripheral edge of the semiconductor device 1A. The second translucent member 4C is supported by the sealing member 5B by being bonded to the upper surface 52a of the sealing member 5B. The second translucent member 4C is disposed on the sealing member 5B. Of the lower surface of the second light transmissive member 4C facing the first light transmissive member 4A, the portion not bonded to the sealing member 5B covers the gap 53a.
　実施形態３の半導体デバイス１Ｂは、実施形態２の半導体デバイス１Ａと同様な方法で製造することが可能である。但し、実施形態３の場合には、第２の透光性部材４Ｃを封止部材５Ｂに接着した後、回路基板２、封止部材５Ｂと共に第２の透光性部材４Ｃを、半導体デバイス１Ｂの外周において切断するようにしてもよい。第２の透光性部材４Ｃがガラスのように切断が困難な材料である場合には、回路基板２と封止部材５Ｂとを、半導体デバイス１Ｂの周縁部で切断した後、第２の透光性部材４Ｃを封止部材５Ｂに接着するようにしてもよい。 The semiconductor device 1B of the third embodiment can be manufactured by the same method as the semiconductor device 1A of the second embodiment. However, in the case of the third embodiment, after the second light transmissive member 4C is bonded to the sealing member 5B, the second light transmissive member 4C together with the circuit board 2 and the sealing member 5B is attached to the semiconductor device 1B. You may make it cut | disconnect in the outer periphery. When the second translucent member 4C is a material that is difficult to cut such as glass, the circuit board 2 and the sealing member 5B are cut at the peripheral edge of the semiconductor device 1B, and then the second transparent member is cut. The optical member 4C may be bonded to the sealing member 5B.
　第３の実施形態は、第２の実施形態に比し、封止部材５Ｂの形状の成形等が簡単であり、生産性の向上を図ることができる。半導体デバイス１Ｂの外形サイズが小さい場合には、第２の透光性部材４Ｃの外形サイズが余り大きくならないので、有利である。上記以外は、実施形態２と同様であり、実施形態２に対応する部材に同一の符号を付して説明を省略する。 In the third embodiment, the molding of the shape of the sealing member 5B is simpler than the second embodiment, and the productivity can be improved. When the external size of the semiconductor device 1B is small, the external size of the second translucent member 4C is not so large, which is advantageous. Except for the above, the second embodiment is the same as the second embodiment.
　実施形態２および実施形態３において、第１の透光性部材４Ａと第２の透光性部材４Ｂとの間、または第１の透光性部材４Ａと第２の透光性部材４Ｃとの間には中空構造部、すなわち空隙部５３または５３ａが設けられている。この中空構造部を大気圧としてもよいが、減圧してもよい。この中空構造部に透明な物質を充填してもよい。中空構造部内にゲッタを成膜して減圧の確保を容易にすることができる。物質が充填されていない場合には、中空構造部内に存在する水蒸気等が温度変化により結露して受光領域を曇らせることがある。中空構造部内に、透明な物質を充填することによって、中空構造部内に存在する水蒸気を無くすことができるので、水蒸気の結露による受光領域の曇りを防止することができる。中空構造部内に充填する物質の例としては、エポキシ樹脂、アクリル樹脂等を挙げることができる。 In Embodiment 2 and Embodiment 3, between 1st translucent member 4A and 2nd translucent member 4B, or between 1st translucent member 4A and 2nd translucent member 4C. A hollow structure, that is, a gap 53 or 53a is provided between them. The hollow structure portion may be at atmospheric pressure, but may be depressurized. You may fill this hollow structure part with a transparent substance. A getter can be formed in the hollow structure portion to facilitate the securing of reduced pressure. When the substance is not filled, water vapor or the like existing in the hollow structure part may condense due to a temperature change and cloud the light receiving region. By filling the hollow structure part with a transparent substance, water vapor present in the hollow structure part can be eliminated, so that the light receiving region can be prevented from being clouded by condensation of water vapor. Examples of the substance filled in the hollow structure portion include an epoxy resin and an acrylic resin.
　中空構造部内に充填する透明な物質内に顔料や染料を分散させることによって、赤外線、紫外線等の特定範囲の波長光のみを受光部（半導体素子３の上面に設けられた機能領域３１）に到達させたり、遮断したりする光学的フィルタの機能を中空構造部に設けてもよい。 By dispersing pigments and dyes in a transparent material filled in the hollow structure portion, only light in a specific range of wavelengths such as infrared rays and ultraviolet rays reaches the light receiving portion (the functional region 31 provided on the upper surface of the semiconductor element 3). The function of the optical filter for causing or blocking may be provided in the hollow structure portion.
－実施形態４－
　図４は、本発明に係る半導体デバイスの実施形態４の断面図である。実施形態４の半導体デバイス１Ｃは、第１の波長選択用薄膜８１および第２の波長選択用薄膜８２が形成されている点を除き、実施形態２の半導体デバイス１Ａと同様な構造を有する。実施形態４の半導体デバイス１Ｃが、実施形態２の半導体デバイス１Ａと相違する点は、第１の透光性部材４Ａおよび第２の透光性部材４Ｂに、それぞれ第１の波長選択用薄膜８１および第２の波長選択用薄膜８２といった波長選択用薄膜（光学的フィルタ）が形成されている点である。半導体デバイス１Ｃにおいて、第１の透光性部材４Ａの下面、すなわち、半導体素子３側の面には、第１の波長選択用薄膜８１が、また、第２の透光性部材４Ｂの下面、すなわち、中空構造部である空隙部５３側の面には第２の波長選択用薄膜８２が形成されている。 Embodiment 4
FIG. 4 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention. The semiconductor device 1C of the fourth embodiment has the same structure as the semiconductor device 1A of the second embodiment except that the first wavelength selecting thin film 81 and the second wavelength selecting thin film 82 are formed. The semiconductor device 1C of the fourth embodiment is different from the semiconductor device 1A of the second embodiment in that the first light-transmissive member 4A and the second light-transmissive member 4B are each provided with a first wavelength selection thin film 81. In addition, a wavelength selecting thin film (optical filter) such as the second wavelength selecting thin film 82 is formed. In the semiconductor device 1C, the first wavelength selecting thin film 81 is formed on the lower surface of the first light transmissive member 4A, that is, the surface on the semiconductor element 3 side, and the lower surface of the second light transmissive member 4B. That is, the second wavelength selecting thin film 82 is formed on the surface of the hollow structure portion on the side of the gap 53.
　第１および第２の波長選択用薄膜８１および８２は、赤外線、紫外線等の特定範囲の波長光のみを受光部（半導体素子３の上面に設けられた機能領域３１）に到達させたり、遮断したりする光学的フィルタである。例えば、蒸着等によって、第１の波長選択用薄膜８１および第２の波長選択用薄膜８２を成膜することができる。第１および第２の波長選択用薄膜８１および８２のうちの一方、または両方を、第１または第２の透光性部材４Ａまたは４Ｂの上面に形成してもよい。半導体デバイス１Ｃは、第１および第２の波長選択用薄膜８１および８２のいずれか一方のみを有することとしてもよい。その他は、実施形態２と同様であるので、実施形態２に対応する部材に同一の符号を付して説明を省略する。 The first and second wavelength selection thin films 81 and 82 allow only light in a specific range such as infrared rays and ultraviolet rays to reach or block the light receiving unit (the functional region 31 provided on the upper surface of the semiconductor element 3). Or an optical filter. For example, the first wavelength selecting thin film 81 and the second wavelength selecting thin film 82 can be formed by vapor deposition or the like. One or both of the first and second wavelength selecting thin films 81 and 82 may be formed on the upper surface of the first or second translucent member 4A or 4B. The semiconductor device 1 </ b> C may have only one of the first and second wavelength selecting thin films 81 and 82. Since others are the same as that of Embodiment 2, the same code | symbol is attached | subjected to the member corresponding to Embodiment 2, and description is abbreviate | omitted.
　図３に示す実施形態３の半導体デバイス１Ｂにおいても、第１および第２の透光性部材４Ａおよび４Ｃの一方または両方に、第および第２の波長選択用薄膜８１および８２を形成することとしてもよい。 Also in the semiconductor device 1B of the third embodiment shown in FIG. 3, the first and second wavelength selecting thin films 81 and 82 are formed on one or both of the first and second translucent members 4A and 4C. Also good.
－実施形態５－
　図５は、本発明に係る半導体デバイスの実施形態５の断面図である。実施形態１～４においては、透光性部材は、厚さが一様な板状部材である。図５に図示された透光性部材４Ｄの周縁部４ｄ１は、中央部４ｄ２より薄く形成されている。周縁部４ｄ１の厚さは、中央部４ｄ２の厚さの半分よりも厚く、封止部材５は、透光性部材４Ｄの周縁部４ｄ１の周囲を周縁部４ｄ１の厚さの下半分以下の領域を覆うことによって、透光性部材４Ｄを封止している。透光性部材４Ｄの形状は、平坦（すなわち透光性部材４Ｄは板状部材）に限らず、透光性部材４Ｄの中央部が凸状あるいは凹状に湾曲したり、あるいは透光性部材４Ｄの上面に微細なレンズや凹凸が形成されてもよい。その他は、実施形態１と同様であり、実施形態１に対応する部材に同一の符号を付して説明を省略する。 -Embodiment 5
FIG. 5 is a sectional view of a semiconductor device according to a fifth embodiment of the present invention. In Embodiments 1 to 4, the translucent member is a plate-like member having a uniform thickness. The peripheral portion 4d1 of the translucent member 4D illustrated in FIG. 5 is formed thinner than the central portion 4d2. The thickness of the peripheral portion 4d1 is thicker than half of the thickness of the central portion 4d2, and the sealing member 5 is a region around the peripheral portion 4d1 of the translucent member 4D and below the lower half of the thickness of the peripheral portion 4d1. The translucent member 4D is sealed by covering. The shape of the translucent member 4D is not limited to flat (that is, the translucent member 4D is a plate-like member), and the central portion of the translucent member 4D is curved in a convex or concave shape, or the translucent member 4D. Fine lenses and irregularities may be formed on the upper surface of the substrate. Others are the same as those of the first embodiment, and members corresponding to those of the first embodiment are denoted by the same reference numerals and description thereof is omitted.
－実施形態６－
　図６は、本発明に係る半導体デバイスの実施形態６の断面図である。実施形態６においても、実施形態５と同様、透光性部材の周縁部が中央部より薄く形成されている。実施形態６の半導体デバイス１Ｅが、実施形態５の半導体デバイス１Ｄと相違する点は、封止部材５が、透光性部材４Ｅの周縁部４ｅ１の厚さ全体の領域を覆うことによって、透光性部材４Ｅを封止している点である。図６に図示された透光性部材４Ｅの周縁部４ｅ１の厚さは、中央部４ｅ２の厚さの半分以下とされている。このため、封止部材５により、透光性部材４Ｅの周縁部４ｅ１の厚さ全体の領域を覆うことによって透光性部材４Ｅを封止しても、透光性部材４Ｅの中央部４ｅ２の厚さの下半分以下の領域が封止されるにすぎない。 -Sixth Embodiment-
FIG. 6 is a sectional view of a semiconductor device according to a sixth embodiment of the present invention. In Embodiment 6, as in Embodiment 5, the peripheral edge of the translucent member is formed thinner than the center. The semiconductor device 1E according to the sixth embodiment is different from the semiconductor device 1D according to the fifth embodiment in that the sealing member 5 covers the entire region of the peripheral edge 4e1 of the translucent member 4E so that the translucent light is transmitted. It is the point which has sealed the property member 4E. The thickness of the peripheral portion 4e1 of the translucent member 4E shown in FIG. 6 is set to be half or less of the thickness of the central portion 4e2. For this reason, even if the translucent member 4E is sealed by covering the entire region of the peripheral edge portion 4e1 of the translucent member 4E with the sealing member 5, the central portion 4e2 of the translucent member 4E is sealed. Only the area below the lower half of the thickness is sealed.
　従って、実施形態６においても、他の実施形態と同様、透光性部材４Ｅと封止部材５との熱膨張係数の相違に起因して透光性部材４Ｅに作用する応力は、従来よりも小さくなり、透光性部材４Ｅを、破損しにくくすることができる。 Therefore, in the sixth embodiment, as in the other embodiments, the stress acting on the translucent member 4E due to the difference in the thermal expansion coefficient between the translucent member 4E and the sealing member 5 is higher than that in the past. It becomes small and can make the translucent member 4E hard to be damaged.
　以上説明した通り、本発明の各実施形態によれば、半導体デバイス１および１Ａ～１Ｅは、半導体素子３の機能領域３１上に積層された透光性部材４および４Ａ～４Ｅの周囲を封止する封止部材５、５Ａ、および５Ｂを有する。封止部材５が封止する透光性部材４、４Ａ～４Ｅの領域は、透光性部材４および４Ａ～４Ｅの厚さの下半分以下の浅い領域とされている。このため、封止樹部材５、５Ａ、５Ｂと透光性部材４、４Ａ～４Ｅとの熱膨張係数の相違に起因して透光性部材４、４Ａ～４Ｅに作用する応力を小さくすることができ、透光性部材４、４Ａ～４Ｅを破損しにくくすることができる。 As described above, according to each embodiment of the present invention, the semiconductor devices 1 and 1A to 1E are sealed around the translucent members 4 and 4A to 4E stacked on the functional region 31 of the semiconductor element 3. It has the sealing members 5, 5A, and 5B to do. The regions of the translucent members 4, 4A to 4E that are sealed by the sealing member 5 are shallow regions that are less than the lower half of the thickness of the translucent members 4 and 4A to 4E. Therefore, the stress acting on the translucent members 4, 4A to 4E due to the difference in thermal expansion coefficient between the sealing tree members 5, 5A and 5B and the translucent members 4, 4A to 4E is reduced. It is possible to make the translucent members 4, 4A to 4E difficult to break.
　上記各実施形態において、封止部材５の上面５１は、透光性部材４の近傍において低く、ワイヤ６の最大高さ部６ａに対応する位置において高くなる形状を有する。このため、封止部材５の上面５１が、透光性部材４の近傍においてその近傍の外側の周囲よりも低くなる形状を有することとしても、ワイヤ６を保護する十分な厚さを有する封止部材５が得られる。 In each of the above embodiments, the upper surface 51 of the sealing member 5 has a shape that is low in the vicinity of the translucent member 4 and is high at a position corresponding to the maximum height portion 6 a of the wire 6. For this reason, even if the upper surface 51 of the sealing member 5 has a shape lower than the outer periphery in the vicinity of the translucent member 4, the sealing has a sufficient thickness to protect the wire 6. The member 5 is obtained.
　実施形態２、３として示されているように、回路基板２上に、第１、第２の透光性部材４Ａ、４Ｂ（または４Ｃ）を配置し、第１、第２の透光性部材４Ａ、４Ｂ（または４Ｃ）間に中空構造部、すなわち空隙部５３、５３ａを構成することができる。中空構造部内にゲッタを成膜して減圧の確保を容易にすることができる。中空構造部内に透明な物質を充填することによって、内部に水蒸気が結露するのを防止することができる。中空構造部内に顔料や染料を分散させることによって、光学的フィルタの機能を中空構造部に設けてもよい。 As shown in the second and third embodiments, the first and second translucent members 4A and 4B (or 4C) are arranged on the circuit board 2, and the first and second translucent members are disposed. A hollow structure portion, that is, a gap portion 53, 53a can be formed between 4A, 4B (or 4C). A getter can be formed in the hollow structure portion to facilitate the securing of reduced pressure. By filling the hollow structure with a transparent substance, it is possible to prevent water vapor from condensing inside. The function of the optical filter may be provided in the hollow structure part by dispersing pigments or dyes in the hollow structure part.
　実施形態４に示すように、第１、第２の透光性部材４Ａ、４Ｂの一面に波長選択用薄膜８１、８２を形成することによって、光学的フィルタの機能を波長選択用薄膜８１および８２に設けてもよい。 As shown in the fourth embodiment, the wavelength selecting thin films 81 and 82 are formed on one surface of the first and second translucent members 4A and 4B, so that the function of the optical filter is reduced. May be provided.
　上記実施形態では、半導体素子３と回路基板２とをワイヤボンディングにより接続する構造を例示した。しかし、本発明は、半導体素子３と回路基板２とのボンディングとして、フリップチップボンディング等他の接合方法を適用することが可能である。 In the above embodiment, the structure in which the semiconductor element 3 and the circuit board 2 are connected by wire bonding is exemplified. However, in the present invention, other bonding methods such as flip chip bonding can be applied as bonding between the semiconductor element 3 and the circuit board 2.
　上記実施形態では、半導体素子３の機能領域３１を受光領域として例示したが、本発明は、発光等、受光以外の他の機能を有する半導体素子３に対しても適用することができる。 In the above embodiment, the functional region 31 of the semiconductor element 3 is exemplified as the light receiving region, but the present invention can also be applied to the semiconductor element 3 having a function other than light reception such as light emission.
　その他、本発明の半導体デバイスは、本発明はこれらの内容に限定されるものではない。上記各実施形態を組み合わせたり、発明の趣旨の範囲内において、種々、変形したりして構成することが可能であり、本発明の技術的思想の範囲内で考えられるその他の態様も本発明の範囲内に含まれる。要は、半導体素子の機能領域上に積層された透光性部材の周囲において、封止部材が、透光性部材の厚さの下半分以下の領域を覆うことによって透光性部材を封止するようにしたものであればよい。 In addition, the semiconductor device of the present invention is not limited to these contents. The embodiments described above can be combined or modified in various ways within the scope of the spirit of the invention, and other aspects conceivable within the scope of the technical idea of the present invention are also possible. Included in range. In short, around the translucent member laminated on the functional area of the semiconductor element, the encapsulating member covers the area below the lower half of the thickness of the translucent member to seal the translucent member Anything can be used.
　次の優先権基礎出願の開示内容は引用文としてここに組み込まれる。
　日本国特許出願２０１２年第１８０５０９号（２０１２年８月１６日出願）
  The disclosure of the following priority application is hereby incorporated by reference.
Japanese patent application 2012 No. 180509 (filed on August 16, 2012)

Claims (14)

  1. 　基板と、
    　前記基板の一面上に搭載され、上面に機能領域が形成された半導体素子と、
    　前記半導体素子の機能領域上に積層された第１の透光性部材と、
    　前記基板の一面上に形成され、前記半導体素子の周囲および前記第１の透光性部材の周囲を覆うことによって前記第１の透光性部材を封止する封止部材とを備え、
    　前記封止部材は前記第１の透光性部材の厚さの下半分以下の領域を覆う半導体デバイス。     A substrate,
    A semiconductor element mounted on one surface of the substrate and having a functional region formed on the upper surface;
    A first translucent member laminated on the functional region of the semiconductor element;
    A sealing member that is formed on one surface of the substrate and seals the first translucent member by covering the periphery of the semiconductor element and the periphery of the first translucent member;
    The said sealing member is a semiconductor device which covers the area | region below the lower half of the thickness of said 1st translucent member.
  2. 　請求項１に記載の半導体デバイスにおいて、
    　前記半導体素子は、前記機能領域の外周に配列された電極を有し、
    　前記一面には接続端子が形成され、
    　前記電極と前記接続端子とはワイヤにより接続される半導体デバイス。     The semiconductor device according to claim 1,
    The semiconductor element has electrodes arranged on the outer periphery of the functional region,
    A connection terminal is formed on the one surface,
    A semiconductor device in which the electrode and the connection terminal are connected by a wire.
  3. 　請求項２に記載の半導体デバイスにおいて、
    　前記封止部材の前記一面とは反対側の上面は、前記第１の透光性部材の近傍において前記近傍の外側の周囲よりも低く形成される半導体デバイス。     The semiconductor device according to claim 2,
    The upper surface of the sealing member opposite to the one surface is a semiconductor device formed lower in the vicinity of the first light-transmissive member than in the vicinity of the outer periphery in the vicinity.
  4. 　請求項１～３のいずれか１項に記載の半導体デバイスにおいて、
    　前記半導体素子は前記一面にボンディングされ、
    　前記第１の透光性部材は前記半導体素子に接着される半導体デバイス。     The semiconductor device according to any one of claims 1 to 3,
    The semiconductor element is bonded to the one surface,
    The first translucent member is a semiconductor device bonded to the semiconductor element.
  5. 　請求項１～４のいずれか１項に記載の半導体デバイスにおいて、
    　前記第１の透光性部材に関して前記機能領域とは反対側に、前記第１の透光性部材から離間した第２の透光性部材をさらに備え、
    　前記封止部材は、前記第１の透光性部材の前記第２の透光性部材に面する側に空隙を有し、
    　前記第２の透光性部材は、前記封止部材に支持されて設けられる半導体デバイス。     The semiconductor device according to any one of claims 1 to 4,
    A second translucent member spaced from the first translucent member on the opposite side of the functional region with respect to the first translucent member;
    The sealing member has a gap on the side of the first light transmissive member facing the second light transmissive member,
    The second translucent member is a semiconductor device provided to be supported by the sealing member.
  6. 　請求項５に記載の半導体デバイスにおいて、
    　前記第２の透光性部材の一部が前記空隙を覆う半導体デバイス。     The semiconductor device according to claim 5, wherein
    A semiconductor device in which a part of the second translucent member covers the gap.
  7. 　請求項５に記載の半導体デバイスにおいて、
    　前記第２の透光性部材は、前記封止部材上に配置される半導体デバイス。     The semiconductor device according to claim 5, wherein
    The second translucent member is a semiconductor device disposed on the sealing member.
  8. 　請求項５～７のいずれか１項に記載の半導体デバイスにおいて、
    　前記第２の透光性部材の前記第１の透光性部材に面する面は、前記第１の透光性部材の前記第２の透光性部材に面する面よりも大きい面積を有する半導体デバイス。     The semiconductor device according to any one of claims 5 to 7,
    The surface of the second light transmissive member facing the first light transmissive member has a larger area than the surface of the first light transmissive member facing the second light transmissive member. Semiconductor device.
  9. 　請求項５～８のいずれか１項に記載の半導体デバイスにおいて、
    　前記第２の透光性部材は前記封止部材に接着される半導体デバイス。     The semiconductor device according to any one of claims 5 to 8,
    The second translucent member is a semiconductor device bonded to the sealing member.
  10. 　請求項５～９のいずれか１項に記載の半導体デバイスにおいて、
    　前記第２の透光性部材の前記空隙側の面に光学的フィルタが形成される半導体デバイス。     The semiconductor device according to any one of claims 5 to 9,
    A semiconductor device in which an optical filter is formed on a surface of the second translucent member on the air gap side.
  11. 　請求項１０に記載の半導体デバイスにおいて、
    　前記第１の透光性部材の前記半導体素子側の面に光学的フィルタが形成される半導体デバイス。     The semiconductor device according to claim 10.
    A semiconductor device in which an optical filter is formed on a surface of the first translucent member on the semiconductor element side.
  12. 　請求項５～９のいずれか１項に記載の半導体デバイスにおいて、
    　前記第２の透光性部材と前記第１の透光性部材との間に透明な物質が充填される半導体デバイス。     The semiconductor device according to any one of claims 5 to 9,
    A semiconductor device in which a transparent substance is filled between the second translucent member and the first translucent member.
  13. 　請求項１～４のいずれか１項に記載の半導体デバイスにおいて、
    　前記透光性部材の周縁部が前記透光性部材の中央部よりも薄く形成され、
    　前記封止部材は、前記周縁部の厚さ全体の領域を覆う半導体デバイス。     The semiconductor device according to any one of claims 1 to 4,
    The peripheral part of the translucent member is formed thinner than the central part of the translucent member,
    The said sealing member is a semiconductor device which covers the area | region of the whole thickness of the said peripheral part.
  14. 　請求項１～４のいずれか１項に記載の半導体デバイスにおいて、
    　前記透光性部材の周縁部が前記透光性部材の中央部よりも薄く形成され、
    　前記封止部材は、前記周縁部の厚さ全体の一部の領域を覆う半導体デバイス。
          The semiconductor device according to any one of claims 1 to 4,
    The peripheral part of the translucent member is formed thinner than the central part of the translucent member,
    The said sealing member is a semiconductor device which covers the one part area | region of the whole thickness of the said peripheral part.
PCT/JP2013/057260 2012-08-16 2013-03-14 Semiconductor device WO2014027476A1 (en)

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