JP2002009265A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JP2002009265A JP2002009265A JP2000186816A JP2000186816A JP2002009265A JP 2002009265 A JP2002009265 A JP 2002009265A JP 2000186816 A JP2000186816 A JP 2000186816A JP 2000186816 A JP2000186816 A JP 2000186816A JP 2002009265 A JP2002009265 A JP 2002009265A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- imaging device
- state imaging
- image pickup
- transparent component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 229920005989 resin Polymers 0.000 claims abstract description 59
- 239000011347 resin Substances 0.000 claims abstract description 59
- 238000007789 sealing Methods 0.000 claims abstract description 51
- 230000001681 protective effect Effects 0.000 claims abstract description 40
- 238000003384 imaging method Methods 0.000 claims description 217
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000011521 glass Substances 0.000 abstract description 40
- 238000011109 contamination Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 15
- 239000000428 dust Substances 0.000 description 7
- 239000000470 constituent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000009291 secondary effect Effects 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、固体撮像装置に関
するものであり、更に詳しくは、固体撮像素子の撮像面
とこれを保護する透明部品との周縁部を封止する封止樹
脂が封止時に撮像面へ侵入することのない固体撮像装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device, and more particularly, to a solid-state imaging device in which a sealing resin for sealing a peripheral portion between an imaging surface of a solid-state imaging device and a transparent component for protecting the imaging surface is sealed. The present invention relates to a solid-state imaging device that does not sometimes enter an imaging surface.
【0002】[0002]
【従来の技術】従来、固体撮像装置は、固体撮像素子を
パッケージ内に収容して保護用のガラス板でカバーして
製造されている。図10はそのような固体撮像装置10
0を示す縦断面図であり、セラミックスのパッケージ1
08の底に撮像面102を上にして固体撮像素子101
を接着剤105でダイボンディングし、図示を省略した
配線回路との間を例えば金ワイヤ106でワイヤボンデ
ィングして電気的に接続した後、気体を封じ込め保護用
のガラス板104を封止樹脂109で取り付けて作製さ
れている。この封止樹脂109は接着剤を兼ねるもので
あり、パッケージ108にはプラスチックスによるもの
も存在する。2. Description of the Related Art Conventionally, a solid-state imaging device is manufactured by accommodating a solid-state imaging device in a package and covering it with a protective glass plate. FIG. 10 shows such a solid-state imaging device 10.
0 is a longitudinal sectional view showing a ceramic package 1;
08 and the solid-state imaging device 101 with the imaging surface 102 facing up.
Is electrically bonded to the wiring circuit (not shown) by, for example, wire bonding with a gold wire 106, and a glass plate 104 for containing and protecting gas is sealed with a sealing resin 109. It is made by attaching. The sealing resin 109 also serves as an adhesive, and some of the package 108 is made of plastics.
【0003】しかし、固体撮像装置が8mmビデオカメ
ラを始めとして、デジタルカメラ、内視鏡、その他に多
用されるに伴って、薄型化、小型化、また低コストが要
請されるようになり、ワイヤボンディング方式ではな
く、配線回路を備えた保護用透明部品を兼ねるガラス基
板に対して固体撮像素子をフェイスダウンに接続するフ
リップチップ方式や、固体撮像素子をフェイスダウンに
接続したフレキシブル基板を保護用透明部品に貼り合わ
せるテープキャリヤ方式によって製造されるようになっ
ている。However, as solid-state imaging devices are widely used in digital cameras, endoscopes, etc., including 8 mm video cameras, thinning, miniaturization, and low cost are required. Instead of a bonding method, a flip-chip method in which a solid-state image sensor is connected face-down to a glass substrate that also serves as a protective transparent component with a wiring circuit, and a transparent transparent board with a solid-state image sensor connected face-down It is manufactured by a tape carrier system that is attached to parts.
【0004】図6はフリップチップ方式によって固体撮
像素子がガラス基板にフェイスダウンに接続された固体
撮像装置200の構成要素を示す斜視図である。図6の
Aは接続される前の固体撮像素子201と保護用透明部
品204とを示す。すなわち、配線回路205が設けら
れた保護用透明部品204に対して、接続用のパンプ2
03を備えた固体撮像素子201が撮像面202を下側
にして重ね合わされ、加熱、加圧してバンプ203と配
線回路205とが接続される。続いて、撮像面202を
保護し光感度の劣化を防ぐために、重ね合わされた固体
撮像素子201と保護用透明部品204との周縁部を封
止樹脂209で封止することによって、図6のBに示す
固体撮像素子装置200が得られる。図7は図6のBに
示した固体撮像装置200の縦断面図である。なお、通
常的には固体撮像素子201の光感度を向上させるため
に、撮像面202の各画素には集光のための半凸レンズ
が形成される。FIG. 6 is a perspective view showing components of a solid-state imaging device 200 in which a solid-state imaging device is connected face-down to a glass substrate by a flip-chip method. FIG. 6A shows the solid-state imaging device 201 and the protective transparent component 204 before connection. That is, the connection pump 2 is connected to the protection transparent component 204 provided with the wiring circuit 205.
The solid-state image sensor 201 provided with the image sensor 03 is superposed with the image pickup surface 202 facing down, and the bump 203 and the wiring circuit 205 are connected by heating and pressing. Subsequently, in order to protect the imaging surface 202 and prevent deterioration of optical sensitivity, the peripheral portion of the superimposed solid-state imaging device 201 and the protective transparent component 204 is sealed with a sealing resin 209, thereby obtaining the image shown in FIG. Is obtained. FIG. 7 is a longitudinal sectional view of the solid-state imaging device 200 shown in FIG. 6B. In general, a semi-convex lens for condensing light is formed on each pixel of the imaging surface 202 in order to improve the light sensitivity of the solid-state imaging device 201.
【0005】上記の封止樹脂209には紫外線硬化性樹
脂や熱硬化性樹脂が使用され、封止樹脂は硬化前の状態
で塗布され直ちに硬化処理されるが、図7に示すよう
に、また図6のAも参照して、バンプ203および配線
回路205によって定まる固体撮像素子201と保護用
透明部品204との間の空間207の間隙g0 は0.0
3〜0.1mmと小さいので、硬化処理の過程で未硬化
の低粘度の封止樹脂209が毛細管現象によって内部へ
侵入し固体撮像素子201の撮像面202に至ってこれ
を汚染し易い。すなわち、侵入した封止樹脂209が不
透明品である場合には光を透過させないので撮像面20
2の実質的な面積を小さくし、透明品であっても撮像面
2の半凸レンズの効果を損なう。そのために、封止樹脂
の塗布プロセスは塗布量の厳密な管理を必要としてい
る。As the sealing resin 209, an ultraviolet curable resin or a thermosetting resin is used. The sealing resin is applied in a state before curing and is immediately cured, as shown in FIG. Referring also to FIG. 6A, the gap g 0 of the space 207 between the solid-state imaging device 201 and the protective transparent component 204 determined by the bump 203 and the wiring circuit 205 is 0.0
Since it is as small as 3 to 0.1 mm, the uncured low-viscosity sealing resin 209 easily enters the interior due to a capillary phenomenon during the curing process, reaches the imaging surface 202 of the solid-state imaging device 201, and easily contaminates it. In other words, if the penetrating sealing resin 209 is an opaque product, it does not transmit light, and
2 has a substantially reduced area, and the effect of the semi-convex lens on the imaging surface 2 is impaired even if the product is transparent. Therefore, the application process of the sealing resin requires strict control of the application amount.
【0006】これに対して、特開平6ー37143号公
報には、固体撮像素子に撮像面を囲むように枠状構造体
を設けて封止樹脂の流れを止めるようにした固体撮像装
置が例示されている。図8はそのような固体撮像装置3
00の端部の拡大断面図である。配線305を設けたガ
ラス基板304に固体撮像素子301がバンプ303を
介してフェイスダウンに接続されており、更に、高さ5
0μm、幅80μmの金メッキ膜からなる枠状構造体3
06が撮像面302を囲むように、固体撮像素子301
表面とガラス基板304表面との双方に固着されてい
る。そして、その外側に封止樹脂309が充填されたも
のである。このような固体撮像装置300は封止樹脂3
09が比較的低い粘度であっても、枠状構造体306が
封止樹脂309の流れを止めるので撮像面302へ侵入
することはないとされている。On the other hand, Japanese Patent Application Laid-Open No. Hei 6-37143 exemplifies a solid-state imaging device in which a solid-state imaging device is provided with a frame-like structure so as to surround an imaging surface to stop the flow of a sealing resin. Have been. FIG. 8 shows such a solid-state imaging device 3.
It is an expanded sectional view of the end of 00. A solid-state imaging device 301 is connected face-down via a bump 303 to a glass substrate 304 provided with a wiring 305, and a height 5
Frame-shaped structure 3 made of a gold plating film having a thickness of 0 μm and a width of 80 μm
06 so as to surround the imaging surface 302.
It is fixed to both the surface and the surface of the glass substrate 304. Then, the outside thereof is filled with a sealing resin 309. Such a solid-state imaging device 300 includes a sealing resin 3
Even if 09 has a relatively low viscosity, the frame-shaped structure 306 stops the flow of the sealing resin 309 and thus does not enter the imaging surface 302.
【0007】また、固体撮像素子のキャリヤテープとし
てのフレキシブル基板に設けられた開口の周囲に隆起部
を設けて封止樹脂の流れを止めるようにした固体撮像装
置も考えられる。図9はそのような固体撮像装置400
の端部の拡大断面図である。すなわち、固体撮像装置4
00は、固体撮像素子401の電極403eに設けたバ
ンプ403をフレキシブル基板407上の配線回路パタ
ーン405に圧接またはハンダ付けして、固体撮像素子
401をフェイスダウンに接続し、これを更に透明基板
404に対して接着剤408で貼り合わせた後、固体撮
像素子401、フレキシブル基板407、透明基板40
4の周縁部に紫外線硬化性樹脂または熱硬化性樹脂から
なる封止樹脂409を塗布して硬化させたものである。
そして、この固体撮像素子401の撮像面402に対応
するフレキシブル基板407の開口407hの周囲には
バンプ403より低い隆起部406が例えばフォトレジ
スト膜またはメッキ膜によって設けられている。このよ
うな固体撮像装置400は隆起部406が侵入する封止
樹脂409を阻止し、固体撮像素子401の撮像面40
2に至ることを防ぐので、良好な撮像品質が得られると
されている。[0007] A solid-state imaging device in which a raised portion is provided around an opening provided in a flexible substrate as a carrier tape of the solid-state imaging device to stop the flow of the sealing resin is also conceivable. FIG. 9 shows such a solid-state imaging device 400.
It is an expanded sectional view of the end part. That is, the solid-state imaging device 4
00, the bumps 403 provided on the electrodes 403e of the solid-state imaging device 401 are pressed or soldered to the wiring circuit pattern 405 on the flexible substrate 407, and the solid-state imaging device 401 is connected face-down. , The solid-state imaging device 401, the flexible substrate 407, and the transparent substrate 40.
The sealing resin 409 made of an ultraviolet curable resin or a thermosetting resin is applied to the periphery of No. 4 and cured.
A raised portion 406 lower than the bump 403 is provided around the opening 407h of the flexible substrate 407 corresponding to the imaging surface 402 of the solid-state imaging device 401 by, for example, a photoresist film or a plating film. Such a solid-state imaging device 400 blocks the sealing resin 409 into which the raised portion 406 enters, and the imaging surface 40 of the solid-state imaging device 401.
2, it is said that good imaging quality can be obtained.
【0008】[0008]
【発明が解決しようとする課題】上記図7の固体撮像装
置200は量産化に際して封止樹脂の塗布量の厳密な管
理に困難がある。また、特開平6ー37143号による
固体撮像素子301の撮像面302の周囲に枠状構造体
306を設けた固体撮像装置300や、フレキシブル基
板407の開口407hの周囲に隆起部406を設けた
固体撮像装置400は、封止樹脂が撮像面にまで侵入す
ることを防ぐには有効な方法ではあるが、何れの場合も
固体撮像素子またはフレキシブル基板に対して高精度の
フォトリソグラフィ技術によるメッキ膜またはフォトレ
ジスト膜の形成を必要とする。また、固体撮像素子をガ
ラス基板または透明基板に対してフェイスダウンに接続
した固体撮像装置においては、撮像面と基板と間の空間
の間隔は電気的な接続に使用されるバンプ等の高さによ
ってほぼ一義的に決定され、その間隔は大幅に変え得る
ものではないが、上記の空間の間隔を大にすることがで
きれば、例えば基板の撮像面側に塵埃が付着した場合に
おいて、塵埃の影の撮像面への写り込みが低減されるで
あろうことが期待される。In the solid-state imaging device 200 shown in FIG. 7, it is difficult to strictly control the application amount of the sealing resin in mass production. Also, a solid-state imaging device 300 provided with a frame-shaped structure 306 around an imaging surface 302 of a solid-state imaging device 301 according to JP-A-6-37143, and a solid-state imaging device provided with a raised portion 406 around an opening 407h of a flexible substrate 407. The imaging device 400 is an effective method for preventing the sealing resin from invading the imaging surface, but in any case, a solid-state imaging device or a plating film or a flexible substrate by a high-precision photolithography technique. It requires the formation of a photoresist film. In a solid-state imaging device in which a solid-state imaging device is connected face-down to a glass substrate or a transparent substrate, the space between the imaging surface and the substrate depends on the height of bumps or the like used for electrical connection. It is determined almost unambiguously, and the interval can not be changed drastically.However, if the interval of the space can be increased, for example, when dust adheres to the imaging surface side of the substrate, the shadow of the dust It is expected that the reflection on the imaging surface will be reduced.
【0009】本発明は上述の問題に鑑みてなされ、固体
撮像素子が基板に対してフェイスダウンに接続され、保
護用透明部品でカバーされた固体撮像装置において、精
度の高いフォトリソグラフィ技術を必要とせず簡易に製
造され、封止樹脂の侵入による固体撮像素子の撮像面の
汚染を防ぐことのできる固体撮像装置を提供することを
課題とする。The present invention has been made in view of the above-described problems, and requires a high-precision photolithography technique in a solid-state imaging device in which a solid-state imaging device is connected face-down to a substrate and covered with a protective transparent component. It is an object of the present invention to provide a solid-state imaging device that can be manufactured easily and can prevent contamination of an imaging surface of a solid-state imaging device due to penetration of a sealing resin.
【0010】[0010]
【課題を解決するための手段】上記の課題は請求項1の
構成によって解決されるが、その解決手段を説明すれ
ば、次の如くである。Means for Solving the Problems The above-mentioned problems can be solved by the structure of claim 1. The means for solving the problems will be described as follows.
【0011】請求項1の固体撮像装置は、基板に対して
撮像面をフェイスダウンに接続した固体撮像素子と固体
撮像素子を保護する保護用透明部品とが狭い空間をあけ
て接合され、その接合物の周縁部が封止樹脂で封止され
た固体撮像装置において、撮像面と対向する保護用透明
部品の内側の面に、撮像面より広い面積の窪み、または
撮像面より広い面積を囲う形状の環状溝が設けられてい
る装置である。このような固体撮像装置は、塗布される
低粘度の封止樹脂が毛細管現象によって内部へ侵入して
も、透明部品の内側の面に形成された窪みまたは環状溝
によって毛細管現象が立ち切られて、封止樹脂の侵入が
停止される。また、透明部品に設けられた窪みは固体撮
像素子と保護用透明部品との間の間隔を大にすることか
ら、保護用透明部品の内面に付着した塵埃の影の撮像面
への写り込みを低減させるという副次的効果を与える。
なお、環状溝はそのような副次的効果を与えないが、環
状溝の内側に上記の窪みよりは浅い窪みを形成させるこ
とによって、環状溝のみでは得られない副次的な効果を
付与することができる。In the solid-state imaging device according to the first aspect, a solid-state imaging device having an imaging surface connected face-down to a substrate and a protective transparent component for protecting the solid-state imaging device are joined with a narrow space, and the joining is performed. In a solid-state imaging device in which the peripheral portion of the object is sealed with a sealing resin, a recess having a larger area than the imaging surface or a shape enclosing an area larger than the imaging surface is formed on the inner surface of the protective transparent component facing the imaging surface. This device has an annular groove. In such a solid-state imaging device, even if the low-viscosity sealing resin applied enters the interior due to capillary action, the capillary action is cut off by a dent or an annular groove formed on the inner surface of the transparent component. Then, the penetration of the sealing resin is stopped. In addition, since the recess provided in the transparent component increases the distance between the solid-state imaging device and the protective transparent component, the shadow of dust adhering to the inner surface of the protective transparent component is reflected on the imaging surface. It has the secondary effect of reducing.
Although the annular groove does not provide such a secondary effect, by forming a shallower dent than the above-described dent inside the annular groove, a secondary effect that cannot be obtained only with the annular groove is provided. be able to.
【0012】請求項1に従属する請求項2の固体撮像装
置は、保護用透明部品に固体撮像素子を接続すべき配線
回路が形成されており、基板と保護用透明部品とが一体
とされた装置である。このような固体撮像装置は、フリ
ップチップ方式によって固体撮像素子がバンプを介して
加熱加圧下に例えばガラス基板に接続されるものであ
り、最も簡素な構成で薄型化、小型化されたものとな
る。請求項1に従属する請求項3の固体撮像装置は、基
板がフレキシブル基板であり、フレキシブル基板の開口
枠内に撮像面を位置させるように固体撮像素子がフェイ
スダウンに接続され、固体撮像素子の接続面とは反対側
の面に保護用透明部品が接合された装置である。このよ
うな固体撮像装置は、テープキャリア方式によって固体
撮像素子が接続された例えばTABテープと保護用透明
部品とが接着剤で接合され高い量産性のもとに製造され
る。According to a second aspect of the present invention, a wiring circuit for connecting the solid-state imaging device is formed on the protective transparent component, and the substrate and the protective transparent component are integrated. Device. In such a solid-state imaging device, a solid-state imaging device is connected to, for example, a glass substrate under heat and pressure via bumps by a flip-chip method, and has a simplest configuration and is thinner and smaller. . The solid-state imaging device according to claim 3 is dependent on claim 1, wherein the substrate is a flexible substrate, and the solid-state imaging device is connected face-down so that an imaging surface is positioned within an opening frame of the flexible substrate. This is a device in which a protective transparent component is joined to the surface opposite to the connection surface. Such a solid-state imaging device is manufactured with high mass productivity, for example, a TAB tape to which a solid-state imaging device is connected by a tape carrier method and a protective transparent component are bonded with an adhesive.
【0013】請求項1に従属する請求項4の固体撮像装
置は、窪みによる保護用透明部品の薄肉部分が平板状、
またはレンズ状に形成されている装置である。このよう
な固体撮像装置は、撮像光が透過する保護用透明部品の
薄肉部分を平板状とすることによって一般的に広く使用
されるほか、レンズ状とすることによって、広角的な撮
像または望遠的な撮像を可能とする。請求項1に従属す
る請求項5の固体撮像装置は、保護用透明部品が可視光
線、赤外線、または紫外線に透明である装置である。こ
のような固体撮像装置は、一般的な可視光線下での撮像
のほか、赤外線に透明な保護用透明部品によって赤外線
像の撮像が可能であり、紫外線に透明な保護用透明部品
によって紫外線像の撮像が可能である。According to a fourth aspect of the present invention, in the solid-state imaging device according to the first aspect, the thin portion of the protection transparent component formed by the depression has a flat plate shape.
Alternatively, the device is formed in a lens shape. Such a solid-state imaging device is generally widely used by forming a thin portion of a protective transparent component through which imaging light is transmitted into a flat plate shape, and by forming a thin lens portion into a lens shape, thereby wide-angle imaging or telephoto. It is possible to perform various imaging. The solid-state imaging device according to claim 5 is a device in which the protective transparent component is transparent to visible light, infrared light, or ultraviolet light. Such a solid-state imaging device can capture an infrared image with a protective transparent component that is transparent to infrared rays, and can capture an infrared image with a protective transparent component that is transparent to ultraviolet rays, in addition to imaging under general visible light. Imaging is possible.
【0014】[0014]
【発明の実施の形態】本発明の固体撮像装置は、上述し
たように、基板に対して撮像面をフェイスダウンに接続
した固体撮像素子と固体撮像素子を保護する保護用透明
部品とが狭い空間をあけて接合され、その接合物の周縁
部が封止樹脂で封止された固体撮像装置において、保護
用透明部品の撮像面と対向する内側の面に、撮像面より
広い面積の窪み、または撮像面より広い面積を囲う形状
の環状溝が設けられている装置である。環状溝の内側に
更に窪みを形成させたものであってもよい。これら保護
用透明部品における窪みや環状溝は保護用透明部品の材
料をガラスやプラスチックスとする場合、何れも溶融状
態で型に入れ加圧し冷却することによって得られるが、
勿論、ブロック状のものを削ってもよく、また窪みの場
合には、平板と枠状板との貼り合わせることによっても
得られる。DESCRIPTION OF THE PREFERRED EMBODIMENTS As described above, the solid-state imaging device according to the present invention has a narrow space in which a solid-state imaging device having an imaging surface connected face-down to a substrate and a protective transparent component for protecting the solid-state imaging device are narrow. In a solid-state imaging device in which the peripheral portion of the joined product is sealed with a sealing resin, a recess having a larger area than the imaging surface on the inner surface facing the imaging surface of the protective transparent component, or This is an apparatus provided with an annular groove having a shape surrounding an area larger than the imaging surface. A recess may be further formed inside the annular groove. When the material for the protective transparent component is made of glass or plastics, the dents and annular grooves in these protective transparent components are obtained by putting them in a mold in a molten state, pressurizing and cooling,
Of course, a block-shaped object may be cut off, and in the case of a dent, it can be obtained by laminating a flat plate and a frame-shaped plate.
【0015】上記の基板は、固体撮像素子が接続される
べき配線回路を備えた保護用透明部品、例えば配線回路
が設けられたガラス板、すなわちガラス基板であっても
よく、また透明な合成樹脂基板であってもよい。更に
は、基板は固体撮像素子が接続されるべき配線回路を備
えたフレキシブルなテープキャリヤであってもよい。こ
の場合、テープキャリヤは固体撮像素子が接続される面
とは反対側の面が保護用透明部品に接着される。The substrate may be a protective transparent component provided with a wiring circuit to which a solid-state imaging device is to be connected, for example, a glass plate provided with a wiring circuit, that is, a glass substrate. It may be a substrate. Further, the substrate may be a flexible tape carrier provided with a wiring circuit to which a solid-state imaging device is to be connected. In this case, the surface of the tape carrier opposite to the surface to which the solid-state imaging device is connected is bonded to the protective transparent component.
【0016】また上記の保護用透明部品の窪みによる薄
肉部分の断面形状は特に限定されないが、一般的には均
一厚さの板状とされる。しかし、不均一な厚さのレンズ
形状としてもよく、その場合、一方の面を平面状として
もよい。更には、保護用透明部品はガラスであってもよ
く、また透明な合成樹脂であってもよい。勿論、透明性
は可視光線に透明であること以外に、赤外線または紫外
線に透明であることも含まれる。The sectional shape of the thin portion due to the depression of the protective transparent component is not particularly limited, but is generally a plate having a uniform thickness. However, the lens may have a non-uniform thickness, and in this case, one surface may be planar. Furthermore, the protective transparent component may be glass or a transparent synthetic resin. Of course, transparency includes not only transparency to visible light but also transparency to infrared or ultraviolet light.
【0017】[0017]
【実施例】次に本発明の固体撮像装置を実施例により、
図面を参照して、具体的に説明する。Next, the solid-state imaging device of the present invention will be described by way of an embodiment.
This will be specifically described with reference to the drawings.
【0018】(実施例1)図1は実施例1の固体撮像装
置1の断面図であり、従来例で示した図7に対応する図
である。また、図2は図1において〇印で示した部分の
拡大断面図である。固体撮像装置1は固体撮像素子11
が撮像面12をフェイスダウンにしてガラス基板14に
接続されたものである。すなわち、固体撮像素子11に
形成された例えば金によるバンプ13とガラス基板14
に形成されている配線回路15とを位置合わせし加熱、
加圧して接続されたものである。そして、固体撮像素子
11の撮像面12に対向するガラス基板14の面には撮
像面12よりも広い面積で窪み16が形成されている。
窪み16の上側の空間17はバンプ13と配線回路15
とによって定まる固体撮像素子11とガラス基板14と
の間の本来的な空間である。なお、上記の金によるバン
プ13に代えてハンダによるバンプ13としてもよい。
その場合の接続は加熱のみで可能である。(Embodiment 1) FIG. 1 is a sectional view of a solid-state imaging device 1 according to Embodiment 1 and corresponds to FIG. 7 shown in a conventional example. FIG. 2 is an enlarged cross-sectional view of a portion indicated by a mark in FIG. The solid-state imaging device 1 includes a solid-state imaging device 11
Are connected to the glass substrate 14 with the imaging surface 12 facing down. That is, the bump 13 made of, for example, gold and the glass substrate 14 formed on the solid-state imaging device 11 are formed.
The heating is performed by aligning the wiring circuit 15 formed in
They are connected under pressure. A depression 16 is formed on the surface of the glass substrate 14 facing the imaging surface 12 of the solid-state imaging device 11 with a larger area than the imaging surface 12.
The space 17 above the depression 16 is formed by the bump 13 and the wiring circuit 15.
This is an intrinsic space between the solid-state imaging device 11 and the glass substrate 14 determined by The bumps 13 made of solder may be used instead of the bumps 13 made of gold.
The connection in that case is possible only by heating.
【0019】上記の固体撮像素子11とガラス基板14
とがバンプ13を介して接続された状態において、その
周縁部に硬化前の紫外線硬化性の封止樹脂19がディス
ペンサによって塗布される。塗布後に紫外線を照射して
封止樹脂19を硬化させるが、その過程において、未硬
化の低粘度の封止樹脂19は固体撮像素子11とガラス
基板14との狭い空間17、ないしは固体撮像素子11
と配線回路15との間の空間を毛細管現象によって侵入
し内部へ入り込むが、図2に示すように、ガラス基板1
4に設けられている窪み16と本来の空間17とによっ
て、固体撮像素子11の表面と窪み16の底面との間に
は矢印g1 で示す大きさの間隙が形成されているので毛
細管現象が立ち切られ、封止樹脂19は窪み16へ僅か
入った箇所で垂直方向へ垂れて侵入を停止される。そし
て、紫外線硬化が進行することにより封止樹脂19は図
2に示した状態で完全に固体化される。The above-mentioned solid-state image pickup device 11 and glass substrate 14
In a state where the sealing resin 19 is connected via the bump 13, an ultraviolet-curable sealing resin 19 before curing is applied to a peripheral portion thereof by a dispenser. After the application, the sealing resin 19 is cured by irradiating ultraviolet rays. In the process, the uncured low-viscosity sealing resin 19 forms a narrow space 17 between the solid-state imaging device 11 and the glass substrate 14 or the solid-state imaging device 11.
The space between the wiring circuit 15 and the wiring circuit 15 is penetrated by capillary action and enters the inside. As shown in FIG.
By a recess 16 is provided to the original space 17 to 4, capillary action because the gap size indicated by the arrow g 1 is formed between the bottom surface and recess 16 of the solid-state imaging device 11 Then, the sealing resin 19 is suspended in the vertical direction at a position where the sealing resin 19 slightly enters the depression 16 and is stopped. Then, as the ultraviolet curing proceeds, the sealing resin 19 is completely solidified in the state shown in FIG.
【0020】このようにして、侵入した封止樹脂19が
固体撮像素子11の撮像面12を汚染することを完全に
防止することができ、優れた撮像品質が得られる。ま
た、封止樹脂19が撮像面12を汚染した不良品の発生
が防止されるので、製品の歩留りが向上し、製造ライン
の生産性を高める。更には、窪み16によって固体撮像
素子11の撮像面12とガラス基板14の内面(窪み1
6の底面)との間隔が大になることにより、ガラス基板
14の内面に塵埃が付着するようなことがあっても、撮
像面12への塵埃の影の写り込みが低減されるという副
次的な効果が得られる。In this manner, the contamination of the imaging surface 12 of the solid-state imaging device 11 by the infiltrating sealing resin 19 can be completely prevented, and excellent imaging quality can be obtained. Further, since the occurrence of defective products in which the sealing resin 19 contaminates the imaging surface 12 is prevented, the product yield is improved, and the productivity of the manufacturing line is improved. Further, the image pickup surface 12 of the solid-state imaging device 11 and the inner surface of the glass substrate 14 (the depression 1
6 (the bottom surface of the glass substrate 6), even if dust adheres to the inner surface of the glass substrate 14, the shadow of dust on the imaging surface 12 is reduced. Effect is obtained.
【0021】(実施例2)図3は実施例2の固体撮像装
置2についての、実施例1の図2と同様な拡大断面図で
ある。各構成要素のうち、実施例1の固体撮像装置1の
構成要素と共通するものには1の位の数字を同一とする
20番台の符号を付して説明を省略し、異なる構成要素
を主体的に説明する。すなわち、図3に示すように、固
体撮像素子21の撮像面22に対向するガラス基板24
の内面に、実施例1の窪み16に代えて、撮像面22よ
り広い面積を囲う形状の環状溝28を形成させたもので
ある。環状溝28は角樋状の溝として示したが、勿論、
丸樋状の溝としてもよい。(Embodiment 2) FIG. 3 is an enlarged sectional view of the solid-state imaging device 2 of Embodiment 2 similar to FIG. 2 of Embodiment 1. Among the constituent elements, those in common with the constituent elements of the solid-state imaging device 1 of the first embodiment are denoted by the same reference numerals in the twentieth unit, and the description thereof is omitted. Will be explained. That is, as shown in FIG. 3, the glass substrate 24 facing the imaging surface 22 of the solid-state imaging device 21.
An annular groove 28 having a shape surrounding an area larger than the imaging surface 22 is formed instead of the depression 16 of the first embodiment. Although the annular groove 28 is shown as a trough-shaped groove, of course,
It may be a round trough-shaped groove.
【0022】実施例1の場合と同様、固体撮像素子21
とガラス基板24とが接続された状態において、その周
縁部に硬化前の紫外線硬化性の封止樹脂29をディスペ
ンサによって塗布し、紫外線を照射して封止樹脂29を
硬化させるが、その過程で、未硬化の低粘度の封止樹脂
29は固体撮像素子21とガラス基板24の間の空間2
7を毛細管現象によって侵入して環状溝28に至る。し
かし、この環状溝28によって固体撮像素子21の表面
と環状溝28の底面との間に矢印g2 で示す大きさの間
隙が形成されているので毛細管現象が立ち切られ、封止
樹脂29は環状溝28へ僅か入った箇所で侵入を停止さ
れると共に、紫外線硬化が進行することにより固体化さ
れる。なお、実施例2の固体撮像装置2においては、封
止樹脂29による撮像面22の汚染は十分に防止し得る
が、空間27の間隙を大にするものではないので、実施
例1におけるような、ガラス基板24の内面に付着した
塵埃の影の撮像面22への写り込みを低減させるという
効果は得られない。As in the first embodiment, the solid-state imaging device 21
In a state where the glass substrate 24 and the glass substrate 24 are connected, an ultraviolet-curable sealing resin 29 before curing is applied to a peripheral portion thereof by a dispenser, and the sealing resin 29 is cured by irradiating ultraviolet rays. And the uncured low-viscosity sealing resin 29 is used for the space 2 between the solid-state imaging device 21 and the glass substrate 24.
7 penetrate by capillary action and reach the annular groove 28. However, since the size of the gap indicated by the arrow g 2 between the bottom surface and the annular groove 28 of the solid-state imaging device 21 is formed by the annular groove 28 is cut standing capillary action, the sealing resin 29 Intrusion is stopped at a position slightly entering the annular groove 28, and solidification is caused by the progress of ultraviolet curing. In the solid-state imaging device 2 according to the second embodiment, the contamination of the imaging surface 22 by the sealing resin 29 can be sufficiently prevented. However, since the gap of the space 27 is not increased, the solid-state imaging device 2 as in the first embodiment is used. However, the effect of reducing the reflection of dust shadows on the inner surface of the glass substrate 24 on the imaging surface 22 cannot be obtained.
【0023】(実施例3)図4は実施例3の固体撮像装
置3についての、実施例2の図3と同様な拡大断面図で
ある。各構成要素のうち、実施例2の固体撮像装置2の
構成要素と共通するものには1の位の数字を同一にした
30番台の符号を付して説明を省略し、異なる構成要素
を主体的に説明する。すなわち、固体撮像装置3は、図
4に示すように、固体撮像素子31の撮像面32に対向
するガラス基板34の面に、実施例2の環状溝28と同
様に、撮像面32の外周より大きい環状溝38を設け、
その環状溝38の内側に環状溝38よりは浅い窪み36
を形成させたものである。実施例2の場合と同様に、毛
細管現象によって内部へ侵入する未硬化の封止樹脂39
は環状溝38に至って毛細管現象が立ち切られて侵入を
停止される。また、環状溝38の内側に形成させた窪み
36は実施例1の固体撮像装置1のガラス基板14に設
けた窪み16よりは浅いが、固体撮像素子31の表面と
窪み36の底面との間の空間の間隙g3 の大きさを適宜
設定することができる。(Embodiment 3) FIG. 4 is an enlarged sectional view of the solid-state imaging device 3 of Embodiment 3 similar to FIG. 3 of Embodiment 2. Among the constituent elements, those common to the constituent elements of the solid-state imaging device 2 according to the second embodiment are denoted by the same reference numerals in the thirties and the description thereof is omitted, and different constituent elements are mainly described. Will be explained. That is, as shown in FIG. 4, the solid-state imaging device 3 is provided on the surface of the glass substrate 34 facing the imaging surface 32 of the solid-state imaging Providing a large annular groove 38,
A recess 36 shallower than the annular groove 38 inside the annular groove 38
Is formed. As in the case of the second embodiment, the uncured sealing resin 39 penetrating into the interior due to the capillary phenomenon.
Reaches the annular groove 38, the capillary action is cut off, and the intrusion is stopped. The depression 36 formed inside the annular groove 38 is shallower than the depression 16 provided in the glass substrate 14 of the solid-state imaging device 1 of the first embodiment, but is between the surface of the solid-state imaging device 31 and the bottom surface of the depression 36. it is possible to set the size of the gap g 3 space appropriately.
【0024】(実施例4)実施例1から実施例3まで
は、ガラス基板に固体撮像素子をフリップチップ方式で
接続した固体撮像装置を例示したが、実施例4において
は、固体撮像素子をテープキャリヤ方式によって保護用
透明部品に接続する場合を示す。すなわち、図5は実施
例4の固体撮像装置4の端部を示す拡大断面図である。
図5に示すように、固体撮像装置4は、例えば銅箔貼り
ポリイミドシートから作成されたTAB(テープ自動ボ
ンディング)用のフレキシブル基板47の開口47hの
枠内に固体撮像素子41の撮像面42が位置するよう
に、固体撮像素子41のバンプ43をフレキシブル基板
47の配線回路45に加熱、加圧して接続したものを、
保護用透明部品としてのガラス板44に対して接着剤4
8で接合した後、周縁部に硬化前の紫外線硬化性の封止
樹脂49を塗布し、紫外線を照射し光硬化させて製造さ
れるものである。そのガラス板44にはフレキシブル基
板47の開口47hに対応する部分に撮像面42より広
い面積の窪み46が設けられている。従って固体撮像素
子41の表面と窪み46の底面との間に、矢印g4 で示
す大きさの間隙が形成されている。(Embodiment 4) Embodiments 1 to 3 illustrate a solid-state imaging device in which a solid-state imaging device is connected to a glass substrate by a flip-chip method. The case of connecting to a protective transparent component by a carrier system is shown. That is, FIG. 5 is an enlarged cross-sectional view illustrating an end of the solid-state imaging device 4 according to the fourth embodiment.
As shown in FIG. 5, the solid-state imaging device 4 includes an imaging surface 42 of a solid-state imaging device 41 in a frame of an opening 47h of a flexible substrate 47 for TAB (tape automatic bonding) made of, for example, a copper foil-bonded polyimide sheet. Heating, pressing and connecting the bump 43 of the solid-state imaging device 41 to the wiring circuit 45 of the flexible substrate 47 so as to be located,
Adhesive 4 to glass plate 44 as a transparent part for protection
After joining at step 8, an ultraviolet-curing sealing resin 49 before curing is applied to the peripheral portion, and the resin is irradiated with ultraviolet rays to be light-cured to be manufactured. The glass plate 44 is provided with a depression 46 having an area larger than the imaging surface 42 at a portion corresponding to the opening 47h of the flexible substrate 47. Thus between the bottom surface and recess 46 of the solid-state imaging device 41, the gap size indicated by the arrow g 4 are formed.
【0025】すなわち、封止樹脂49が硬化される過程
で低粘度の未硬化の封止樹脂49が固体撮像素子41と
フレキシブル基板47との間の隙間を毛細管現象によっ
て内部へ侵入するが、ガラス板44に設けられている窪
み46に至って毛細管現象が立ち切られて侵入が停止さ
れることにより、封止樹脂49による固体撮像素子41
の撮像面42の汚染が防止される。That is, while the sealing resin 49 is being cured, the low-viscosity uncured sealing resin 49 penetrates into the gap between the solid-state imaging device 41 and the flexible substrate 47 by capillary action. The capillarity breaks down to the depression 46 provided in the plate 44 and the intrusion is stopped, so that the solid-state imaging device 41 using the sealing resin 49 is formed.
Of the imaging surface 42 is prevented.
【0026】以上、本発明の固体撮像装置を実施例によ
って具体的に説明したが、勿論、本発明はこれに限られ
ることなく、本発明の技術的思想に基づいて種々の変形
が可能である。Although the solid-state imaging device of the present invention has been described in detail with reference to the embodiments, it is needless to say that the present invention is not limited to this, and various modifications can be made based on the technical concept of the present invention. .
【0027】例えば実施例2の固体撮像装置2において
はガラス基板24に単純な環状溝28を設けたが、低粘
度の封止樹脂29が侵入を停止される限りにおいて、環
状溝28は複数の円弧状の溝が細幅の境界壁を介して環
状に形成されたものであってもよい。また、複数の環状
溝を同心的に設けてもよい。また、実施例3の固体撮像
装置3においては、環状溝38の内側に続けて窪み36
を設けたが、環状溝38の内側に窪み36を環状溝38
とは独立して設けてもよい。For example, in the solid-state imaging device 2 according to the second embodiment, a simple annular groove 28 is provided in the glass substrate 24, but as long as the low-viscosity sealing resin 29 is stopped from entering, the annular groove 28 may have a plurality of annular grooves. The arc-shaped groove may be formed annularly via a narrow boundary wall. Further, a plurality of annular grooves may be provided concentrically. Further, in the solid-state imaging device 3 according to the third embodiment, the recess 36 continues inside the annular groove 38.
Is provided, but a recess 36 is formed inside the annular groove 38.
May be provided independently.
【0028】また各実施例においては、固体撮像装置
や、その構成要素である固体撮像素子が方形である場合
を説明したが、それ以外の多角形や円形または楕円形で
あってもよく、固体撮像装置や固体撮像素子の形状は限
定されない。また実施例4においてはTAB用のフレキ
シブル基板として銅箔貼りポリイミドのシートによるも
のを例示したが、勿論、これ以外の材料によるフレキシ
ブル基板を使用するものであってもよく、フレキシブル
基板の材料は特に限定されない。また各実施例において
は、封止樹脂として紫外線硬化性樹脂を使用したが、熱
硬化性樹脂を使用してもよいことは言うまでもない。In each embodiment, the solid-state image pickup device and the solid-state image pickup device which is a component thereof have been described as being square. However, other solid-state image pickup devices may be polygonal, circular or elliptical. The shapes of the imaging device and the solid-state imaging device are not limited. In the fourth embodiment, the flexible substrate for TAB is exemplified by a copper foil-bonded polyimide sheet. However, a flexible substrate made of any other material may be used. Not limited. Further, in each of the embodiments, the ultraviolet curable resin is used as the sealing resin, but it goes without saying that a thermosetting resin may be used.
【0029】また各実施例においては、保護用透明部品
として、ガラス基板またはガラス板など、ガラスを材料
とするものを例示したが、ガラス以外の透明な無機物、
例えば水晶や透明石英であってもよく、また透明な合成
樹脂、例えばポリカーボネート樹脂やポリアクリレート
樹脂を材料とするものであってもよい。また、保護用透
明部品の材料として、可視光線に透明な材料のほかに、
赤外線に透明な材料である臭化カリウム(KBr)やポ
リエチレンを使用して物体の赤外線像を撮像することが
可能であり、紫外線に透明な材料としてフッ化カルシウ
ム(CaF2 )やフッ素樹脂を使用して紫外線像を撮像
することができる。Further, in each of the embodiments, as a transparent component for protection, one made of glass, such as a glass substrate or a glass plate, is exemplified.
For example, quartz or transparent quartz may be used, or a transparent synthetic resin such as a polycarbonate resin or a polyacrylate resin may be used. In addition, in addition to materials that are transparent to visible light,
It is possible to take an infrared image of an object using potassium bromide (KBr) or polyethylene that is transparent to infrared rays, and use calcium fluoride (CaF 2 ) or fluororesin as a material that is transparent to ultraviolet rays. Thus, an ultraviolet image can be captured.
【0030】[0030]
【発明の効果】本発明のは以上に説明したような形態で
実施され、次に述べるような効果を奏する。The present invention is embodied in the form described above, and has the following effects.
【0031】請求項1の固体撮像装置によれば、固体撮
像素子の撮像面に対向する保護用透明部品の内面側に、
撮像面より広い面積の窪みまたは撮像面より広い面積を
囲う大きさの環状溝が設けられ、固体撮像素子の表面と
窪みの底面、または固体撮像素子の表面と環状溝の底面
との間隔が大になっているので、その窪みまたは環状溝
によって毛細管現象が立ち切られ封止樹脂の侵入が停止
されて撮像面を汚染せず、良好な撮像品質が得られる。
また、製品の歩留りを向上させ、生産性を高める。更に
は、窪みを設けたものは、固体撮像素子の表面と保護用
透明部品の内面(窪みの底面)との間隔が大になるの
で、保護用透明部品の内面に塵埃が付着するようなこと
があっても、その影の撮像面への写り込みが低減され
る。According to the solid-state imaging device of the first aspect, on the inner surface side of the protective transparent component facing the imaging surface of the solid-state imaging device,
A recess having an area larger than the imaging surface or an annular groove having a size surrounding the area larger than the imaging surface is provided, and a distance between the surface of the solid-state imaging device and the bottom of the depression or the surface of the solid-state imaging device and the bottom of the annular groove is large. Therefore, the capillarity is cut off by the depression or the annular groove, the intrusion of the sealing resin is stopped, and the imaging surface is not contaminated, so that good imaging quality can be obtained.
It also improves product yield and productivity. Further, in the case of the recessed portion, the distance between the surface of the solid-state imaging device and the inner surface of the protective transparent component (the bottom surface of the recess) becomes large, so that dust adheres to the inner surface of the protective transparent component. Even if there is, the reflection of the shadow on the imaging surface is reduced.
【0032】請求項2の固体撮像装置によれば、保護用
透明部品に配線回路が形成されており、固体撮像素子が
直接に接続されるので、構成が簡素で撮像信号の伝送効
率に優れ、かつ撮像面が汚染されることのない固体撮像
装置を与える。請求項3の固体撮像装置によれば、フレ
キブル基板の開口枠内に固体撮像素子の撮像面を位置さ
せて、フレキブル基板の配線回路に固体撮像素子をあら
かじめ接続したものを保護用透明部品と接合させるの
で、量産性が良好で、かつ撮像面が汚染されることのな
い固体撮像装置を与える。According to the solid-state imaging device of the second aspect, the wiring circuit is formed on the protective transparent component and the solid-state imaging device is directly connected, so that the configuration is simple and the transmission efficiency of the imaging signal is excellent. Further, a solid-state imaging device in which an imaging surface is not contaminated is provided. According to the solid-state imaging device of the third aspect, the imaging surface of the solid-state imaging device is positioned in the opening frame of the flexible substrate, and the solid-state imaging device connected in advance to the wiring circuit of the flexible substrate is joined to the protective transparent component. Therefore, a solid-state imaging device with good mass productivity and no contamination of the imaging surface is provided.
【0033】請求項4の固体撮像装置によれば、窪みに
よる保護用透明部品の薄肉部分が平板状とされているも
のは一般的に広く使用され、レンズ状に形成されている
のもは広角的な撮像または望遠的な撮像を可能ならしめ
る。請求項5の固体撮像装置によれば、保護用透明部品
が可視光線に透明なものは一般的に広く使用され、赤外
線に透明なものは赤外線像の撮像、また紫外線に透明な
ものは紫外線像の撮像を可能ならしめる。According to the solid-state image pickup device of the fourth aspect, the thin transparent portion of the protective transparent component formed by the depression is generally widely used, and the thin transparent portion is widely used in the form of a lens. And telephoto imaging. According to the solid-state imaging device of the fifth aspect, a transparent transparent component for visible light is generally widely used, and a transparent transparent component for infrared is used for imaging an infrared image, and a transparent transparent component for ultraviolet light is used for an ultraviolet image. Imaging is possible.
【図1】実施例1の固体撮像装置の縦断面図である。FIG. 1 is a longitudinal sectional view of a solid-state imaging device according to a first embodiment.
【図2】図1における〇印部分の部分拡大断面図であ
る。FIG. 2 is a partially enlarged cross-sectional view of a portion marked with “〇” in FIG. 1;
【図3】実施例2の固体撮像装置の部分拡大断面図であ
る。FIG. 3 is a partially enlarged cross-sectional view of a solid-state imaging device according to a second embodiment.
【図4】実施例3の固体撮像装置の部分拡大断面図であ
る。FIG. 4 is a partially enlarged cross-sectional view of a solid-state imaging device according to a third embodiment.
【図5】実施例4の固体撮像装置の部分拡大断面図であ
る。FIG. 5 is a partially enlarged cross-sectional view of a solid-state imaging device according to a fourth embodiment.
【図6】フリップチップ方式による従来例の固体撮像装
置の構成要素を示す斜視図であり、Aは固体撮像素子と
保護用透明部品を示し、Bは接続された固体撮像素子と
保護用透明部品との周縁部を封止樹脂によって封止して
形成された固体撮像装置を示す。FIG. 6 is a perspective view showing components of a conventional solid-state imaging device using a flip-chip method, wherein A shows a solid-state imaging device and a protective transparent component, and B shows a connected solid-state imaging device and a protective transparent component. 5 shows a solid-state imaging device formed by sealing a peripheral portion of the solid-state imaging device with a sealing resin.
【図7】図6のBの従来の固体撮像装置の縦断面図であ
る。FIG. 7 is a longitudinal sectional view of the conventional solid-state imaging device of FIG. 6B.
【図8】フリップチップ方式による他の従来例の固体撮
像装置の部分拡大断面図である。FIG. 8 is a partially enlarged cross-sectional view of another conventional solid-state imaging device using a flip-chip method.
【図9】キャリヤテープ方式による従来例の固体撮像装
置の部分拡大断面図である。FIG. 9 is a partially enlarged cross-sectional view of a conventional solid-state imaging device using a carrier tape system.
【図10】固体撮像素子がパケージに収容されたワイヤ
ボンディング方式による従来例の固体撮像装置の縦断面
図である。FIG. 10 is a longitudinal sectional view of a conventional solid-state imaging device using a wire bonding method in which a solid-state imaging device is housed in a package.
1……固体撮像装置、11……固体撮像素子、12……
撮像面、13……バンプ、14……ガラス基板、15…
…配線回路、16……窪み、17……空間、19……封
止樹脂、28……環状溝。1 ... solid-state imaging device, 11 ... solid-state imaging device, 12 ...
Imaging surface, 13 ... bump, 14 ... glass substrate, 15 ...
... wiring circuit, 16 ... recess, 17 ... space, 19 ... sealing resin, 28 ... annular groove.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H04N 5/335 H01L 27/14 D (72)発明者 中田 信一 東京都品川区北品川6丁目7番35号 ソニ ー株式会社内 (72)発明者 塚田 敦士 東京都品川区北品川6丁目7番35号 ソニ ー株式会社内 (72)発明者 笹野 啓二 東京都品川区北品川6丁目7番35号 ソニ ー株式会社内 Fターム(参考) 4M109 AA01 BA04 CA06 DB06 GA01 4M118 AA10 AB01 GD03 GD07 HA05 HA10 HA11 HA14 HA25 HA26 HA27 HA31 5C024 CY47 CY48 EX23 EX24 EX25 GY01 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H04N 5/335 H01L 27/14 D (72) Inventor Shinichi Nakata 6-7 Kita Shinagawa, Shinagawa-ku, Tokyo 35 Inside Sony Corporation (72) Inventor Atsushi Tsukada 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation (72) Keiji Sasano 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F term (reference) 4M109 AA01 BA04 CA06 DB06 GA01 4M118 AA10 AB01 GD03 GD07 HA05 HA10 HA11 HA14 HA25 HA26 HA27 HA31 5C024 CY47 CY48 EX23 EX24 EX25 GY01
Claims (5)
接続した固体撮像素子と前記固体撮像素子を保護する保
護用透明部品とが狭い空間をあけて接合され、その接合
物の周縁部が封止樹脂で封止された固体撮像装置におい
て、 前記撮像面と対向する前記保護用透明部品の内側の面
に、前記撮像面より広い面積の窪み、または前記撮像面
より広い面積を囲う形状の環状溝が設けられていること
を特徴とする固体撮像装置。1. A solid-state imaging device having an imaging surface connected face-down to a substrate and a transparent protective component for protecting the solid-state imaging device are joined with a small space therebetween, and a peripheral edge of the joined product is sealed. In the solid-state imaging device sealed with a sealing resin, an inner surface of the protection transparent component facing the imaging surface, a recess having a larger area than the imaging surface, or a ring having a shape surrounding an area larger than the imaging surface. A solid-state imaging device having a groove.
を接続すべき配線回路が形成されており、前記基板と前
記保護用透明部品とが一体とされたものであることを特
徴とする請求項1に記載の固体撮像装置。2. A wiring circuit for connecting the solid-state imaging device to the protective transparent component is formed, and the substrate and the protective transparent component are integrated. Item 2. The solid-state imaging device according to Item 1.
記フレキシブル基板の開口枠内に前記撮像面を位置させ
るように前記固体撮像素子がフェイスダウンに接続さ
れ、前記固体撮像素子の接続面とは反対側の面に前記保
護用透明部品が接合されたものであることを特徴とする
請求項1に記載の固体撮像装置。3. The substrate is a flexible substrate, and the solid-state imaging device is connected face-down so that the imaging surface is positioned within an opening frame of the flexible substrate, and is opposite to a connection surface of the solid-state imaging device. The solid-state imaging device according to claim 1, wherein the protective transparent component is bonded to a side surface.
肉部分が平板状、またはレンズ状に形成されていること
を特徴とする請求項1に記載の固体撮像装置。4. The solid-state imaging device according to claim 1, wherein the thin portion of the protection transparent component formed by the recess is formed in a flat plate shape or a lens shape.
外線、または紫外線に透明であることを特徴とする請求
項1に記載の固体撮像装置。5. The solid-state imaging device according to claim 1, wherein the transparent component for protection is transparent to visible light, infrared light, or ultraviolet light.
Priority Applications (1)
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JP2000186816A JP2002009265A (en) | 2000-06-21 | 2000-06-21 | Solid-state image pickup device |
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JP2000186816A JP2002009265A (en) | 2000-06-21 | 2000-06-21 | Solid-state image pickup device |
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