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WO2012167607A1 - 一种化学机械抛光液 - Google Patents

一种化学机械抛光液 Download PDF

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Publication number
WO2012167607A1
WO2012167607A1 PCT/CN2012/000763 CN2012000763W WO2012167607A1 WO 2012167607 A1 WO2012167607 A1 WO 2012167607A1 CN 2012000763 W CN2012000763 W CN 2012000763W WO 2012167607 A1 WO2012167607 A1 WO 2012167607A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing liquid
polishing
triazole
liquid according
silicon
Prior art date
Application number
PCT/CN2012/000763
Other languages
English (en)
French (fr)
Inventor
王晨
何华锋
Original Assignee
安集微电子（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子（上海）有限公司 filed Critical 安集微电子（上海）有限公司
Priority to SG2013086707A priority Critical patent/SG195120A1/en
Priority to KR1020137029860A priority patent/KR101924668B1/ko
Publication of WO2012167607A1 publication Critical patent/WO2012167607A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a chemical mechanical polishing liquid.
  • CMP chemical mechanical polishing
  • CMP Chemical mechanical polishing
  • Its equipment usually consists of a polishing table with a polishing pad and a carrier for carrying the wafer.
  • the polishing head holds the chip and then presses the front side of the chip against the polishing pad.
  • the polishing head moves linearly on the polishing pad or in the same direction of motion as the polishing table.
  • the slurry containing the abrasive is dropped onto the polishing pad and laid flat on the polishing pad by centrifugation.
  • the wafer surface is globally planarized by both mechanical and chemical effects.
  • silicon is required to have a very high polishing speed.
  • US2002032987 discloses a polishing liquid using an alcoholamine as an additive to increase the removal rate of polysilicon, wherein the additive is preferably 2-(dimethylamine). Base) -2-methyl-1-propanol.
  • US2002151252 discloses a polishing liquid comprising a complexing agent having a plurality of carboxylic acid structures for increasing the removal rate of polysilicon, wherein the preferred complexing agent is EDTA (ethylenediaminetetraacetic acid) and DTPA (diethyltriamine). Pentaacetic acid).
  • EDTA ethylenediaminetetraacetic acid
  • DTPA diethyltriamine
  • EP1072662 discloses a polishing solution containing a lone pair of electrons and a double bond to produce a delocalized organic material to increase the removal rate of polysilicon.
  • the compound is a terpenoid compound and a salt thereof.
  • US2006014390 discloses a polishing liquid for increasing the removal rate of polycrystalline silicon, which comprises 4.25 to 18.5% by weight of an abrasive and 0.05 to 1.5% by weight of an additive.
  • the additive is mainly selected from organic bases such as quaternary ammonium salts, quaternary ammonium bases and ethanolamines.
  • the polishing liquid further contains a nonionic surfactant such as a homopolymer or a copolymerization product of ethylene glycol or propylene glycol.
  • U.S. Patent No. 7,452,481 B2 discloses a method of increasing the polishing rate of silicon using a combination of zirconia, a quaternary carboxylic acid or a quaternary ammonium base.
  • CN101492592A discloses a method of increasing the polishing rate of silicon with azole. Since the salts of the azoles in this method are sodium salts and potassium salts, the polishing liquid system has a problem of poor stability. Since the pH of the acidic azole (e.g., TAZ) is adjusted to be alkaline, the pH is adjusted with potassium hydroxide or sodium hydroxide in the examples, and the introduced sodium ions and potassium ions cause a decrease in colloidal stability. At the same time, these metal ions can cause metal ion contamination of the semiconductor. Reduce the reliability of components.
  • the salts of the azoles in this method are sodium salts and potassium salts
  • the polishing liquid system has a problem of poor stability. Since the pH of the acidic azole (e.g., TAZ) is adjusted to be alkaline, the pH is adjusted with potassium hydroxide or sodium hydroxide in the examples, and the introduced sodium ions and potassium ions cause a decrease in colloidal stability. At the same time,
  • the above method improves the polishing speed of silicon, especially in the emerging TSV (Through Silicon Via) technology, it is difficult to meet the requirement of very high polishing speed for silicon.
  • the technical problem solved by the invention is to provide a chemical mechanical polishing liquid, which realizes a high silicon polishing Light speed.
  • the chemical mechanical polishing liquid of the present invention comprises abrasive particles, water, an azole compound and piperazine.
  • the present inventors have found that the combination of an azole compound and piperazine has a very high polishing rate for silicon, whether monocrystalline or polycrystalline. Not only that, the polishing fluid system also has very high colloidal stability.
  • the combination of the present invention may further comprise tetramethylammonium hydroxide (TMAH) for further increasing the polishing rate.
  • TMAH tetramethylammonium hydroxide
  • the azole compound is selected from one or more of triazole and tetrazolium and derivatives thereof.
  • the azole compound is 1,2,4-triazole, 3-amino-1,2,4-triazole, 5-amino-1,2,4-triazole, 5-carboxyl One or more of -3-amino-1,2,4-triazole and benzotriazole, 1-H tetrazolium, 5-aminotetrazole.
  • the mass percentage concentration of the azole compound is from 1 to 8%.
  • the abrasive particles are selected from one or more of SiO 2 , Al 2 O 3 , CeO 2 , SiC, and Si 3 N 4 .
  • the mass percentage of the abrasive particles is from 1 to 20%.
  • the piperazine has a mass percentage concentration of 1 to 10%.
  • the mass percentage concentration of tetramethylammonium hydroxide is from 1 to 10%.
  • the pH of the polishing liquid is 9 to 12.
  • the reagents and starting materials used in the present invention are commercially available.
  • the positive effects of the present invention are:
  • Table 1 shows the formulations of Examples 1 to 13 of the chemical mechanical polishing liquid of the present invention
  • Chemical mechanical polishing liquid can be prepared by mixing the components listed in Table 1 and their contents in deionized water and adjusting to the desired pH with a pH adjuster.
  • Polishing machine is Logitech (UK) 1 PM52 type, polytex polishing pad, 4cmx4cm square wafer (Wafer), grinding pressure 3psi, grinding table rotation speed 70rev/min, grinding head rotation speed 150rev/min, polishing liquid Drop rate of 100 ml / min. Comparative Example 1 ⁇ 2 and Example Bu 13 Comparison of Polishing Effect
  • Comparative Example 1 shows that the speed of a single silicon dioxide throwing silicon is not high, only 2100 A/min.
  • Comparative Example 2 shows that under the same conditions, the addition of TAZ (1,2,4-triazole) to the polishing solution can increase the polishing speed of silicon by a factor of two. However, since the system contains metal ions (potassium ions), the system is unstable, and after 15 minutes, the polishing particles become gel and precipitate. The polishing liquid also gradually fails with the occurrence of precipitation.
  • Example 2 shows that the addition of piperazine can increase the polishing rate by a factor of two.
  • Examples 3 and 4 show that the polishing rate is further improved by further containing tetramethylammonium hydroxide.
  • Examples 1-7 show that the combination of different azoles and piperazine can significantly increase the polishing speed of silicon when using silica as an abrasive.
  • Examples 8 to 13 show that when Al 2 O 3 , CeO 2 , SiC and Si 3 N 4 are selected as the abrasive, the combination of different azoles and piperazine can also significantly increase the polishing speed of silicon. Examples 1 to 13 also show that the combination of azole and piperazine makes the polishing system unstable from the original instability (layering after 5 minutes, precipitation) (the average particle size of the abrasive particles does not change within 30 days) . The stability effect is very significant.
  • the chemical mechanical polishing liquid of the present invention has the following advantages:

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

一种化学机械抛光液包含：研磨颗粒、水、唑类化合物和哌嗪。该抛光液实现了硅的高速抛光，且该体系具有非常高的稳定性，降低了半导体加工的综合成本。

Description

一种化学机械抛光液
技术领域
本发明涉及一种化学机械抛光液。 技术背景
随着半导体技术的不断发展， 以及大规模集成电路互连层的不断增加， 导电层和绝缘介质层的平坦化技术变得尤为关键。 由 IBM公司二十世纪 80 年代首创的化学机械研磨（CMP)技术被认为是目前全局平坦化的最有效的 方法。
化学机械研磨（CMP)由化学作用和机械作用和两种作用结合而成。它 的设备通常由一个带有抛光垫 （pad) 的研磨台 （polishing table), 及一个 用于承载芯片 （wafer) 的研磨头 (carrier)组成。 其中研磨头固定住芯片， 然 后将芯片的正面压在研磨垫上。 当进行化学机械研磨时， 研磨头在抛光垫 ( pad) 上线性移动或是沿着与研磨台一样的运动方向旋转。 与此同时， 含 有研磨剂的浆液 (slurry)被滴到抛光垫（pad)上， 并因离心作用平铺在抛光 垫（pad)上。 芯片 （wafer)表面在机械和化学的双重作用下实现全局平坦 化。
在新兴的 TSV ( Through Silicon Via ) 技术中， 尤其是在晶背减薄 (backside thinning) 时， 对硅要求具有非常高的抛光速度。 提高硅抛光速 度的方法有很多种， 通常以加强化学作用为主。
US2002032987 公开了一种用醇胺作为添加剂的抛光液， 以提高多晶 硅（Poly silicon) 的去除速率（removal rate), 其中添加剂优选 2- (二甲氨 基） -2-甲基 -1-丙醇。
US2002151252 公开了一种含具有多个羧酸结构的络合剂的抛光液， 用于提高多晶硅去除速率， 其中优选的络合剂是 EDTA (乙二胺四乙酸）和 DTPA (二乙基三胺五乙酸）。
EP1072662 公开了一种含孤对电子和双键产生离域结构的有机物的抛 光液， 以提高多晶硅（Poly silicon) 的去除速率（removal rate), 优选化合 物是胍类的化合物及其盐。
US2006014390公开了一种用于提高多晶硅的去除速率的抛光液，其包 含重量百分比为 4.25〜18.5%研磨剂和重量百分比为 0.05〜1.5%的添加剂。 其中添加剂主要选自季铵盐、季胺碱和乙醇胺等有机碱。此外， 该抛光液还 包含非离子型表面活性剂， 例如乙二醇或丙二醇的均聚或共聚产物。
US7452481 B2公开了用氧化锆、 四元以上的羧酸、 季铵碱的组合物提 高硅的抛光速度的方法。
CN101492592A公开了用唑提高硅的抛光速度的方法。 由于该方法中 唑的盐类为钠盐和钾盐， 使得抛光液体系存在稳定性差的问题。 因为为了使 酸性的唑（例如 TAZ) pH值调到碱性， 实施例中用氢氧化钾或氢氧化钠调 节 pH值， 引入的钠离子和钾离子会造成胶体稳定性下降。 同时这些金属离 子会造成半导体的金属离子污染。 降低元器件的可靠性。
以上方法提高硅的抛光速度有限，尤其在新兴的 TSV (Through Silicon Via)技术中， 难以满足对硅要有非常高的抛光速度的要求。
发明概要
本发明解决的技术问题是提供一种化学机械抛光液，实现了很高的硅抛 光速度。 本发明的化学机械抛光液， 其包含研磨颗粒、 水、 唑类化合物和哌嗪。 本发明发现唑类化合物和哌嗪的组合对硅（无论是单晶硅， 还是多晶硅）都 具有非常高的抛光速度。 不仅如此， 该抛光液系统还具有非常高的胶体稳定 性。 本发明的组合还可以继续包含四甲基氢氧化铵 （TMAH), 用于进一步 提高抛光速度。 在本发明中， 唑类化合物选自三氮唑和四氮唑及其衍生物中的一种或多 种。
在本发明中， 唑类化合物为 1 ,2,4-三氮唑， 3-氨基 -1 ,2,4-三氮唑， 5-氨 基 -1，2，4-三氮唑， 5-羧基 -3-氨基 -1，2,4-三氮唑和苯并三氮唑、 1-H四氮唑、 5-氨基四氮唑中的一种或多种。 在本发明中， 唑类化合物的质量百分比浓度为 1~8%。 在本发明中， 研磨颗粒选自 Si02、 Al203、 Ce02、 SiC和 Si3N4中的一 种或多种。
在本发明中， 研磨颗粒的质量百分比浓度为 1~20%。 在本发明中， 哌嗪的质量百分比浓度为 1~10%。 在本发明中， 四甲基氢氧化铵的质量百分比浓度为 1~10%。
在本发明中， 抛光液的 pH值为 9〜12。 本发明所用试剂及原料均市售可得。 本发明的积极进步效果在于：
1 ) 解决了硅的抛光速度低， 并且胶体不稳定的问题；
2) 实现了很高的硅抛光速度。 大幅提高了 TSV (Through Silicon Via) 技术中， 硅的抛光能力， 提高了产能； 3) 降低了半导体加工的综合成本。 发明内容
下面通过具体实施例进一步阐述本发明的优点，但本发明的保护范围不 仅仅局限于下述实施例。 制备实施例
表 1给出了本发明的化学机械抛光液实施例 1~13的配方，
按表 1中所列组分及其含量， 在去离子水中混合均匀， 用 pH调节剂调 到所需 pH值， 即可制得化学机械抛光液。
表 1 本发明的化学机械抛光液实施例 1~13的配方 研磨 研磨剂浓度 唑的浓度 哌嗪浓度 TMAH浓
序号 唑 PH 剂 (%) (%) (%) 度 （％) 对比 " (用氢氧化
Si02 5 无 无 无 无
例 1 钾调 pH) 对比 11 (用氢氧化
Si02 5 1 ,2,4-三氮唑 4 无 无
例 2 钾调 pH) 实施
Si02 5 1 ,2,4-三氮唑 4 8 0 11 例 1
实施
Si02 5 1 ,2,4-三氮唑 4 10 0 11 例 2
实施
Si02 5 1 ,2,4-三氮唑 4 10 4 11 例 3
实施
Si02 5 1 ,2,4-三氮唑 4 10 8 11 例 4
实施 3-氨基 -1，2，4-
Si02 10 8 6 0 9 例 5 三氮唑
实施 3-氨基 -1 ,2,4-
Si02 10 6 10 0 10 例 6 三氮唑
实施 4-氨基 -1 ,2,4-
Si02 20 1 5 10 12 例 7 三氮唑 实施 5-氨基 -1 ,2,4-
Ce02 1 4 6 2
例 8 三氮唑 11 实施 5-羧基 -3-氨基
Al203 1 4 1 5
例 9 -1 ,2,4-三氮唑 11 实施
S13N4 1 苯并三氮唑 4 6 0
例 10 11 实施
SiC 1 苯并三氮唑 4 6 1
例 11 11 实施
Si02 5 1-H四氮唑 2 4 6
例 12 11 实施
Si02 5 5-氨基四氮唑 2 4 6
例 13 11
效果实施例
抛光条件： 抛光机台为 Logitech (英国） 1 PM52型， polytex抛光垫, 4cmx4cm正方形晶圆 （Wafer), 研磨压力 3psi， 研磨台转速 70转 /分钟， 研磨头自转转速 150转 /分钟， 抛光液滴加速度 100 ml/分钟。 对比例 1~2及实施例卜 13抛光效果对比
30天内 研磨剂 研磨剂 硅抛光
研磨 唑的浓 哌嗪浓 颗粒平 序号 浓度 唑 PH 速度
剂 度 （％) 度（％) 均粒径 ( %) (A/min)
增加值 (A)
11 (用
对比 氢氧化
Si02 5 无 无 无 无 2100 20 例 1 钾调
pH)
11 (用
15分钟 对比 1，2，4-三 氢氧化
Si02 5 4 无 无 4200 后分层， 例 2 氮唑 钾调
沉淀 pH)
实施 1 ,2,4-三
Si02 5 4 8 0 11 9000 0 例 1 氮唑
实施 1 ,2,4-三
Si02 5 4 10 0 11 9500 0 例 2 氮唑
实施 1 ,2,4-三
Si02 5 4 10 4 11 9700 0 例 3 氮唑
Figure imgf000007_0001
对比例 1表明： 单一的二氧化硅抛硅的速度不高， 只有 2100A/min。对 比例 2表明： 在同样条件下， 抛光液中加入 TAZ (1 ,2,4-三氮唑)， 可以将硅 的抛光速度提高 2倍。 但是， 该体系由于含有金属离子 （钾离子)， 体系很 不稳定， 15 分钟后就会出现抛光颗粒变成凝胶、 沉淀。 伴随着沉淀现象的 发生， 抛光液也逐渐失效。
对比例 2和实施例 2比较后表明， 加入哌嗪可使抛光速度提高 2倍。 实施例 3、 4表明， 进一步含有四甲基氢氧化铵， 抛光速度会进一步提 高。 实施例 1~7表明，在用二氧化硅做研磨剂时，不同的唑类和哌嗪的组合 都可以显著提高硅的抛光速度。
实施例 8~13表明， 选用 Al203、 Ce02、 SiC和 Si3N4作为研磨剂时， 不同的唑类和哌嗪的组合也可以显著提高硅的抛光速度。 实施例 1~13同时还表明， 唑类和哌嗪的组合使得抛光液体系由原先的 不稳定（5分钟后分层， 沉淀）变得十分稳定（30天内研磨剂颗粒平均粒径 没有变化)。 稳定效果十分显著。
由以上数据表明， 本发明的化学机械抛光液具有以下优点：
1 ) 解决了硅的抛光速度低， 并且胶体不稳定的问题；
2) 实现了很高的硅抛光速度。 大幅提高了 TSV (Through Silicon Via) 技术中， 硅的抛光能力， 提高了产能；
3) 降低了半导体加工的综合成本。
以上对本发明的具体实施例进行了详细描述， 但其只是作为范例， 本发 明并不限制于以上描述的具体实施例。对于本领域技术人员而言， 任何对本 发明进行的等同修改和替代也都在本发明的范畴之中。 因此， 在不脱离本发 明的精神和范围下所作的均等变换和修改， 都应涵盖在本发明的范围内。

Claims

权利要求
1、 一种化学机械抛光液， 其包含： 研磨颗粒、 水、 唑类化合物和哌嗪。
2、如权利要求 1所述的抛光液，其特征在于:所述的研磨颗粒选自 Si02、 Al203、 Ce02、 SiC和 Si3N4中的一种或多种。
3、 如权利要求 1或 2所述的抛光液， 其特征在于： 所述的研磨颗粒的 质量百分比浓度为 1~20%。
4、 如权利要求 1所述的抛光液， 其特征在于： 所述的唑类化合物选自 三氮唑和四氮唑及其衍生物中的一种或多种。
5、如权利要求 4所述的抛光液，其特征在于:所述的唑类化合物为 1，2,4- 三氮唑， 3-氨基 -1 ,2,4-三氮唑， 5-氨基 -1，2,4-三氮唑， 5-羧基 -3-氨基 -1 ,2,4- 三氮唑、 苯并三氮唑、 1-H四氮唑、 5-氨基四氮唑中的一种或多种。
6、 如权利要求 1所述的抛光液， 其特征在于： 所述的唑类化合物的质 量百分比浓度为 1~8%。
7、 如权利要求 1所述的抛光液， 其特征在于： 所述的哌嗪的质量百分 比浓度为 1~10%。
8、 如权利要求 1所述的抛光液， 其特征在于： 所述抛光液还含有四甲 基氢氧化铵。
9、 如权利要求 8所述的抛光液， 其特征在于： 所述的四甲基氢氧化铵 的质量百分比浓度为 1〜10%。
10、 如权利要求 1所述的抛光液， 其特征在于： 所述抛光液的 pH值为 9~12。
11、 如权利要求 1-10任一项所述的抛光液， 其特征在于： 所述抛光液 用于抛光单晶硅或多晶硅 (
PCT/CN2012/000763 2011-06-08 2012-06-04 一种化学机械抛光液 WO2012167607A1 (zh)

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US8795548B1 (en) * 2013-04-11 2014-08-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Silicon wafer polishing composition and related methods
US9150759B2 (en) * 2013-09-27 2015-10-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing composition for polishing silicon wafers and related methods
CN106189873A (zh) * 2016-07-22 2016-12-07 清华大学 一种抛光组合物
CN111378384A (zh) * 2018-12-28 2020-07-07 安集微电子科技（上海）股份有限公司 一种化学机械抛光液

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