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WO2011148444A1 - Dispositif à semi-conducteurs et son procédé de fabrication - Google Patents

Dispositif à semi-conducteurs et son procédé de fabrication Download PDF

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Publication number
WO2011148444A1
WO2011148444A1 PCT/JP2010/007013 JP2010007013W WO2011148444A1 WO 2011148444 A1 WO2011148444 A1 WO 2011148444A1 JP 2010007013 W JP2010007013 W JP 2010007013W WO 2011148444 A1 WO2011148444 A1 WO 2011148444A1
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WO
WIPO (PCT)
Prior art keywords
electrode
semiconductor device
semiconductor substrate
recess
film
Prior art date
Application number
PCT/JP2010/007013
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English (en)
Japanese (ja)
Inventor
青井信雄
Original Assignee
パナソニック株式会社
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Filing date
Publication date
Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Publication of WO2011148444A1 publication Critical patent/WO2011148444A1/fr

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Definitions

  • the present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a chip-chip stacking, a chip-wafer stacking or a wafer-wafer stacking semiconductor device and a manufacturing method thereof.
  • the thermal conductivity of a TEOS (tetraethylorthosilicate) film is as low as about 1.2 W / (m ⁇ K), which is a factor that hinders heat dissipation of the semiconductor substrate.
  • an object of the present invention is to provide a semiconductor device having a heat dissipation structure with high heat dissipation efficiency and a method for manufacturing the same, which can obtain a sufficient heat dissipation effect even when a three-dimensional integration technique is applied.
  • the inventor of the present application leads to the outside of the three-dimensional semiconductor chip in the three-dimensional semiconductor chip configuration disclosed in Patent Document 1, that is, the surface of each LSI chip to which other chips are bonded.
  • Patent Document 1 the surface of each LSI chip to which other chips are bonded.
  • the inventor of the present application prevents the electrical short circuit between the through electrode and the semiconductor substrate, and provides a heat dissipation recess connected to the through electrode on the back surface of the substrate, or the back surface of the substrate.
  • an insulating high heat dissipation material film specifically, a diamond-like carbon film
  • the inventors have come up with an invention that realizes a semiconductor device having a heat dissipation structure with high heat dissipation efficiency.
  • a first semiconductor device includes a semiconductor substrate and a through electrode penetrating the semiconductor substrate, and at least an end surface of the through electrode is exposed on a surface opposite to an element formation surface of the semiconductor substrate.
  • a first recess and a second recess that does not expose the through electrode, and an inner surface of the first recess excluding the end surface of the through electrode and the second substrate are formed on the opposite surface of the semiconductor substrate.
  • a first insulating film is formed so as to cover the inner surface of the second recess, and the first insulating film is connected to the end surface of the through electrode and extends to the outside of the first recess on the first insulating film.
  • a conductive film is formed.
  • the heat-dissipating recess (the first recess) exposing the end face of the through electrode (that is, connecting to the through electrode) on the opposite surface (substrate back surface) of the element formation surface of the semiconductor substrate. ) Is provided. For this reason, heat generated on the element formation surface of the semiconductor substrate and transmitted to the back surface of the substrate via the through electrode can be radiated from the first recess, so that the through electrode is not exposed (that is, connected to the through electrode). No) The heat radiation efficiency can be sufficiently improved even when the three-dimensional integration technique is applied, compared with the conventional structure in which only the heat radiation recess is provided on the back surface of the substrate.
  • the first insulating film is formed on the back surface of the substrate so as to cover the inner surface of the first recess except for the end surface of the through electrode, formation of a conductive film (that is, an extraction wiring) connected to the end surface of the through electrode is formed. It is possible to reliably prevent an electrical short circuit between the through electrode and the semiconductor substrate due to the above.
  • the second recess may be a groove reaching the outside of the semiconductor substrate.
  • the conductive film may have a heat radiating portion for further improving the heat radiation efficiency, separately from the portion serving as the lead wiring of the through electrode.
  • an electrode is formed on the conductive film in a portion located outside the first recess, and the electrode is formed on the first insulating film and the conductive film.
  • the second insulating film may be formed so that at least the upper surface of the electrode is exposed.
  • the thermal conductivity of the first insulating film may be higher than the thermal conductivity of the silicon oxide film. If it does in this way, heat dissipation efficiency can be improved further.
  • the thermal conductivity of the first insulating film may be 1.5 W / (m ⁇ K) or more. If it does in this way, heat dissipation efficiency can be improved further.
  • the first insulating film may be composed of a diamond-like carbon film.
  • the thermal conductivity of the diamond-like carbon film is as high as about 30 W / (m ⁇ K), so that the heat dissipation efficiency can be further improved.
  • the first method for manufacturing a semiconductor device includes a step (a) of preparing a semiconductor substrate embedded so that the through electrode is not exposed on the opposite surface of the element formation surface, and the opposite surface of the semiconductor substrate. Forming a first recess that exposes at least an end surface of the through electrode and a second recess that does not expose the through electrode; and the first recess on the opposite surface of the semiconductor substrate.
  • the first semiconductor device according to the present invention can be obtained according to the first semiconductor device manufacturing method according to the present invention, the same effects as those of the first semiconductor device according to the present invention can be obtained. be able to.
  • the heat radiation recess (first recess) exposing the end face of the through electrode (that is, connecting to the through electrode) does not expose the through electrode (that is, Since it can be formed at the same time as the heat radiation recess (second recess) (not connected to the through electrode), the same effects as those of the first semiconductor device according to the present invention described above can be obtained without complicating the process. Can do.
  • the second recess may be a groove reaching the outside of the semiconductor substrate.
  • the conductive film may have a heat radiating portion for further improving the heat radiation efficiency, separately from the portion serving as the lead wiring of the through electrode.
  • the semiconductor substrate is polished from the opposite surface side between the step (a) and the step (b), and is applied to the opposite surface after the polishing.
  • the method may further include a step of thinning the semiconductor substrate so that the through electrode is not exposed.
  • the first method of manufacturing a semiconductor device after the step (d), after forming an electrode on the conductive film in a portion located outside the first recess, the first A step of forming a second insulating film on the insulating film and the conductive film so that at least an upper surface of the electrode is exposed may be further provided.
  • the thermal conductivity of the first insulating film may be higher than the thermal conductivity of the silicon oxide film. If it does in this way, heat dissipation efficiency can be improved further.
  • the thermal conductivity of the first insulating film may be 1.5 W / (mK) or more. If it does in this way, heat dissipation efficiency can be improved further.
  • the first insulating film may be composed of a diamond-like carbon film.
  • the thermal conductivity of the diamond-like carbon film is as high as about 30 W / (m ⁇ K), so that the heat dissipation efficiency can be further improved.
  • the first surface is provided on the opposite surface of the semiconductor substrate. Two recesses may not be formed.
  • a second semiconductor device includes a semiconductor substrate and a through electrode penetrating the semiconductor substrate, and at least an end surface of the through electrode is exposed on a surface opposite to an element formation surface of the semiconductor substrate. Thus, a diamond-like carbon film is formed.
  • a diamond-like material having a maximum thermal conductivity of about 30 W / (m ⁇ K) on the surface opposite to the element formation surface (substrate back surface) of the semiconductor substrate from which the through electrode is exposed.
  • a carbon film is formed.
  • the heat generated on the element formation surface of the semiconductor substrate and transmitted to the back surface of the substrate via the through electrode can be dissipated very efficiently. Therefore, even when the three-dimensional integration technology is applied, the heat dissipates. Efficiency can be improved sufficiently.
  • the diamond-like carbon film has an insulating property, it is possible to reliably prevent an electrical short circuit between the through electrode and the semiconductor substrate due to the diamond-like carbon film.
  • the through electrode may protrude from the opposite surface of the semiconductor substrate.
  • the diamond-like carbon film is in contact with the side wall of the protruding portion of the through electrode, the heat dissipation efficiency can be further improved.
  • an electrode may be formed on the end face of the through electrode.
  • a recess that exposes at least the end face of the through electrode may be formed on the opposite surface of the semiconductor substrate.
  • the heat dissipation efficiency can be further improved.
  • the diamond-like carbon film covers the inner surface of the recess except the end surface of the through electrode, the heat dissipation efficiency can be further improved.
  • the diamond-like carbon film may be formed apart from the through electrode.
  • the second method for manufacturing a semiconductor device includes a step (a) of preparing a semiconductor substrate formed so that the through electrode is exposed on the opposite surface of the element formation surface, and an element formation surface of the semiconductor substrate. (B) forming a diamond-like carbon film on the opposite surface of the through electrode so that at least the end face of the through electrode is exposed.
  • the second semiconductor device according to the present invention can be obtained according to the second semiconductor device manufacturing method according to the present invention, the same effects as those of the second semiconductor device according to the present invention can be obtained. be able to.
  • the step (a) is performed by polishing and etching the opposite surface of the semiconductor substrate so that the through electrode is disposed on the opposite surface of the semiconductor substrate.
  • the process of protruding from may be included.
  • the diamond-like carbon film is formed so as to be in contact with the side wall of the protruding portion of the through electrode, the heat dissipation efficiency can be further improved.
  • the second method of manufacturing a semiconductor device according to the present invention may further include a step of forming an electrode on the end face of the through electrode after the step (b).
  • the step of the semiconductor substrate is performed.
  • the opposite surface may include a step of forming a recess exposing at least the end surface of the through electrode.
  • the heat dissipation efficiency can be further improved.
  • the step (b) includes the step of forming the diamond-like carbon film so as to cover the inner surface of the concave portion excluding the end face, the heat dissipation efficiency can be further improved.
  • the step (b) may include a step of forming the diamond-like carbon film apart from the through electrode.
  • the present invention while preventing an electrical short circuit between the through electrode and the semiconductor substrate, by providing a heat radiation recess connected to the through electrode on the back surface of the substrate, or on the back surface of the substrate or in the vicinity thereof.
  • a semiconductor device having a heat dissipation structure with high heat dissipation efficiency can be obtained.
  • FIGS. 1A to 1C are cross-sectional views showing respective steps of the semiconductor device manufacturing method according to the first embodiment.
  • 2A to 2C are cross-sectional views showing respective steps of the semiconductor device manufacturing method according to the first embodiment.
  • FIG. 3A is a view of the state where the semiconductor device according to the first embodiment is formed in each chip region of the semiconductor substrate (wafer) from the back side of the substrate, and FIG. It is the figure which looked at a mode that the 1st crevice and the 2nd crevice were formed in one chip field from the substrate back side, and Drawing 3 (c) is a penetration electrode arranged in a chip field, the 1st FIG. 3D is a perspective view of a recess and a second recess, and FIGS.
  • 3D and 3E respectively show a first recess (including a through electrode) and a second before an electrode and a second insulating film are formed. It is an expanded sectional view of a crevice.
  • 4A to 4C are cross-sectional views showing respective steps of a method for manufacturing a semiconductor device according to a modification of the first embodiment.
  • FIGS. 5A to 5C are cross-sectional views showing respective steps of the method for manufacturing the semiconductor device according to the modification of the first embodiment.
  • FIG. 6 is a plan view of the heat dissipation portion of the semiconductor device according to the modification of the first embodiment as viewed from the back side of the substrate.
  • FIG. 7A is a view of a state in which the semiconductor device according to the modification of the first embodiment is formed in each chip region of the semiconductor substrate (wafer) as viewed from the back side of the substrate.
  • FIG. 7C shows the through electrode and the first recess disposed in the chip region.
  • FIG. 7D is an enlarged cross-sectional view of the first recess (including the through electrode) before forming the electrode and the second insulating film.
  • 8A to 8C are cross-sectional views showing respective steps of the method for manufacturing the semiconductor device according to the second embodiment.
  • FIGS. 9A and 9B are cross-sectional views illustrating respective steps of the method for manufacturing the semiconductor device according to the second embodiment.
  • FIGS. 10A and 10B are cross-sectional views of a semiconductor device according to a modification of the second embodiment.
  • FIGS. 1A to 1C and FIGS. 2A to 2C are cross-sectional views showing respective steps of the semiconductor device manufacturing method according to the first embodiment.
  • a semiconductor substrate 1 is prepared in which a through electrode 2 is buried so as not to be exposed on the surface opposite to the element formation surface (back surface 1b).
  • Various functional elements such as the transistor 11 are formed on the element formation surface (front surface 1 a) side of the semiconductor substrate 1.
  • a wiring layer 12 having a multilayer wiring that is electrically connected to the through electrode 2 and the transistor 11 is formed.
  • the through electrode 2 has, for example, a 5 ⁇ m square shape in plan view from the back surface 1 b side of the semiconductor substrate 1.
  • the through electrode 2 is formed so as to reach the inside of the wiring layer 12, and the side wall of the through electrode 2 is covered with an insulating film 13 with a barrier film (not shown) interposed therebetween.
  • the semiconductor substrate 1 is polished from the back surface 1b side using, for example, CMP (chemical mechanical polishing), and the through electrode 2 is not exposed to the back surface 1b after the polishing.
  • CMP chemical mechanical polishing
  • a rectangular shape of, for example, 20 ⁇ m ⁇ is formed in a region including the portion directly above the through electrode 2 and other regions other than the region.
  • a resist pattern (not shown) having the openings
  • dry etching is performed on the semiconductor substrate 1 using the resist pattern as a mask, and then the resist pattern is removed.
  • the first recess 3 that exposes at least the end face (bottom surface) of the through electrode 2 is formed on the back surface 1b of the semiconductor substrate 1, and the second recess 8 that does not expose the through electrode is formed.
  • the first recess 3 has a bottom portion larger than the bottom surface of the through electrode 2.
  • the depth of each of the first recess 3 and the second recess 8 is, for example, about 10 ⁇ m.
  • a CVD (chemical vapor deposition) method is performed on the back surface 1b of the semiconductor substrate 1 so as to cover the inner surfaces of the first concave portion 3 and the second concave portion 8, respectively.
  • the first insulating film 4 made of a silicon oxide film having a thickness of about 500 nm is formed. Thereafter, only the portion of the first insulating film 4 formed on the bottom surface of the through electrode 2 is removed using, for example, a dry etching method.
  • a TiN film (not shown) having a thickness of, for example, about 100 nm is formed as a barrier film on the first insulating film 4 by, for example, sputtering, and then, for example, 20 nm in thickness is formed on the TiN film by, for example, sputtering.
  • a Cu seed film (not shown) is formed.
  • a conductive film 5 made of a Cu film having a thickness of about 1 ⁇ m is formed.
  • the conductive film 5 is connected to the bottom surface of the through electrode 2 and extends to the outside of the first recess 3. Then, after removing the resist pattern, the TiN film and the Cu seed film in a region where the conductive film 5 is not formed are removed by dry etching, for example, using the conductive film 5 as a mask.
  • an electrode 6 made of, for example, a solder bump is formed on a portion of the conductive film 5 located outside the first recess 3.
  • a CVD method is used to form a first silicon oxide film having a thickness of, for example, about 500 nm over the entire surface of the back surface 1b of the semiconductor substrate 1 including the inner surfaces of the first recess 3 and the second recess 8.
  • the second insulating film 7 is patterned so as to completely cover the conductive film 5 and expose at least the upper surface of the electrode 6.
  • the semiconductor device of this embodiment is completed.
  • FIG. 3A is a view (bird's eye view) of a state in which the semiconductor device of the present embodiment is formed in each chip region 50 of the semiconductor substrate (wafer) 1 from the back surface 1b side
  • FIG. 3C is a view (bird's eye view) of a state in which the first concave portion 3 and the second concave portion 8 are formed in one chip region 50 from the back surface 1b side
  • FIG. It is a perspective view (semi-transparent figure) of the penetration electrode 2, the 1st crevice 3, and the 2nd crevice 8 arranged.
  • FIGS. 3D and 3E are enlarged sectional views of the first recess 3 (including the through electrode 2) and the second recess 8 before forming the electrode 6 and the second insulating film 7, respectively. It is.
  • FIG. 3D shows a barrier film (TiN film) 14 not shown in FIGS. 2B and 2C.
  • the back surface 1b of the semiconductor substrate 1 is provided with a heat radiation recess (first recess 3) that exposes the end surface of the through electrode 2 (that is, is connected to the through electrode 2).
  • first recess 3 a heat radiation recess
  • the heat generated on the element formation surface (front surface 1a) of the semiconductor substrate 1 and transmitted to the back surface 1b via the through electrode 2 can be radiated from the first recess 3, so that the through electrode is exposed.
  • the heat radiation efficiency can be sufficiently improved even when the three-dimensional integration technique is applied.
  • the first insulating film 4 is formed on the back surface 1 b of the semiconductor substrate 1 so as to cover the inner surface of the first recess 3 except for the end surface of the through electrode 2, the conductive material connected to the end surface of the through electrode 2. It is possible to reliably prevent an electrical short circuit between the through electrode 2 and the semiconductor substrate 1 due to the formation of the film 5 (that is, the lead wiring).
  • the conductive film 5 has a heat dissipating part for further improving the heat dissipating efficiency on the back surface 1b of the semiconductor substrate 1 outside the first recessed part 3 separately from the part serving as the lead wiring of the through electrode 2. You may do it.
  • the second recess 8 is formed also in the back surface 1b of the semiconductor substrate 1 in the region where the through electrode 2 is not formed, the substantial back surface 1b of the semiconductor substrate 1 is formed. Since the surface area can be greatly increased, the heat radiation efficiency can be further enhanced.
  • the heat radiation recess (first recess 3) that exposes the end face of the through electrode 2 (that is, is connected to the through electrode 2) does not expose the through electrode 2 (that is, the through electrode 2). Since the heat dissipation recess (second recess 8) can be formed at the same time, the above-described effects can be obtained without complicating the process.
  • a silicon oxide film formed by a CVD method is used as the first insulating film 4 formed on the back surface 1b of the semiconductor substrate 1.
  • an insulating material having a higher thermal conductivity than the silicon oxide film specifically, a thermal conductivity of 1.5 W / (m ⁇ K) or more
  • a low stress amorphous silicon nitride film thermal conductivity is about 4 W / (m ⁇ K) at maximum
  • a diamond-like carbon (DLC) film thermal conductivity is about 30 W / (m ⁇ K) at maximum
  • the DLC film is an amorphous carbon film in which both the sp 3 bond of diamond and the sp 2 bond of graphite have a skeleton structure of carbon atoms.
  • a method for forming the DLC film there are a plasma CVD method, a thermal CVD method, a photo CVD method, a sputtering method, and the like, which can be formed at a low temperature of about 200 ° C. (that is, a temperature range suitable for a semiconductor process).
  • the size and shape of the first recess 3 that is connected to the through electrode 2 and the second recess 8 that is not connected to the through electrode 2 are not particularly limited.
  • both the size and shape of the first recess 3 and the second recess 8 may be the same, or at least one of the size and shape of the first recess 3 and the second recess 8 is different. It may be.
  • the second recess 8 may be a groove reaching the outside of the semiconductor substrate 1.
  • the semiconductor device and the manufacturing method thereof include chip-chip stacking (stacking of chip-state semiconductor devices obtained by wafer dicing), chip-wafer stacking (chip-state semiconductor device and pre-dicing semiconductor device).
  • the semiconductor device can be applied to any of the semiconductor devices in which the wafer state semiconductor device is stacked) or the wafer-wafer stack (lamination of the semiconductor devices in the wafer state) and the manufacturing method thereof.
  • FIGS. 5 (a) to 5 (c) are cross-sectional views showing respective steps of a method for manufacturing a semiconductor device according to this modification.
  • a semiconductor substrate 1 is prepared in which a through electrode 2 is buried so as not to be exposed on the surface opposite to the element formation surface (back surface 1b).
  • Various functional elements such as the transistor 11 are formed on the element formation surface (front surface 1 a) side of the semiconductor substrate 1.
  • a wiring layer 12 having a multilayer wiring that is electrically connected to the through electrode 2 and the transistor 11 is formed.
  • the through electrode 2 has, for example, a 5 ⁇ m square shape in plan view from the back surface 1 b side of the semiconductor substrate 1.
  • the through electrode 2 is formed so as to reach the inside of the wiring layer 12, and the side wall of the through electrode 2 is covered with an insulating film 13 with a barrier film (not shown) interposed therebetween.
  • the semiconductor substrate 1 is polished from the back surface 1b side using, for example, CMP, and the thickness of the semiconductor substrate 1 is set so that the through electrode 2 is not exposed to the back surface 1b after the polishing. Thin out.
  • the first recess 3 is formed on the back surface 1 b of the semiconductor substrate 1 to expose at least the end surface (bottom surface) of the through electrode 2.
  • the first recess 3 has a bottom portion larger than the bottom surface of the through electrode 2.
  • the depth of the first recess 3 is, for example, about 10 ⁇ m.
  • a silicon oxide film having a thickness of, for example, about 500 nm is formed on the back surface 1b of the semiconductor substrate 1 by using, for example, a CVD method so as to cover the inner surface of the first recess 3.
  • a first insulating film 4 made of is formed. Thereafter, only the portion of the first insulating film 4 formed on the bottom surface of the through electrode 2 is removed using, for example, a dry etching method.
  • a TiN film (not shown) having a thickness of, for example, about 100 nm is formed as a barrier film on the first insulating film 4 by, for example, sputtering, and then, for example, 20 nm in thickness is formed on the TiN film by, for example, sputtering.
  • a Cu seed film (not shown) is formed.
  • a conductive film 5 made of a Cu film having a thickness of about 1 ⁇ m is formed.
  • the conductive film 5 is connected to the bottom surface of the through electrode 2 and extends to the outside of the first recess 3.
  • the conductive film 5 is provided on the semiconductor substrate 1 outside the first recess 3 separately from the lead-out wiring portion for electrically connecting the electrode 6 (see FIG. 5C) described later and the through electrode 2.
  • On the back surface 1b there is a heat dissipating part 5a for improving the heat dissipating efficiency.
  • FIG. 6 is a plan view of the heat radiating portion 5 a as viewed from the back surface 1 b side of the semiconductor substrate 1. As shown in FIG. 6, the heat radiating portion 5 a has a wider shape than the other portions of the conductive film 5.
  • the TiN film and the Cu seed film in a region where the conductive film 5 is not formed are removed by dry etching, for example, using the conductive film 5 as a mask.
  • an electrode 6 made of, for example, a solder bump is formed on a portion of the conductive film 5 located outside the first recess 3.
  • the second insulating film 7 made of, for example, a silicon oxide film having a thickness of about 500 nm is formed over the entire surface of the back surface 1b of the semiconductor substrate 1 including the inner surface of the first recess 3 by using, for example, the CVD method.
  • the second insulating film 7 is patterned so as to completely cover the conductive film 5 and expose at least the upper surface of the electrode 6.
  • FIG. 7A is a view (bird's eye view) of a state in which the semiconductor device of the present modification is formed in each chip region 50 of the semiconductor substrate (wafer) 1 as viewed from the back surface 1b side.
  • FIG. 7C is a view (bird's eye view) of a state in which the first concave portion 3 is formed in one chip region 50 from the back surface 1b side, and
  • FIG. 7C is a through electrode 2 arranged in the chip region 50.
  • FIG. 3 is a perspective view (semi-transparent view) of the first recess 3.
  • FIG. 7D is an enlarged cross-sectional view of the first recess 3 (including the through electrode 2) before the electrode 6 and the second insulating film 7 are formed.
  • FIG. 7D shows a barrier film (TiN film) 14 that is not shown in FIGS. 5B and 5C.
  • a heat radiation recess (first recess 3) is provided on the back surface 1b of the semiconductor substrate 1 to expose the end face of the through electrode 2 (that is, to be connected to the through electrode 2).
  • first recess 3 the heat generated on the element formation surface (front surface 1a) of the semiconductor substrate 1 and transmitted to the back surface 1b via the through electrode 2 can be radiated from the first recess 3, so that the through electrode is exposed.
  • the heat radiation efficiency can be sufficiently improved even when the three-dimensional integration technique is applied.
  • the first insulating film 4 is formed on the back surface 1 b of the semiconductor substrate 1 so as to cover the inner surface of the first recess 3 except for the end surface of the through electrode 2, the conductive material connected to the end surface of the through electrode 2. It is possible to reliably prevent an electrical short circuit between the through electrode 2 and the semiconductor substrate 1 due to the formation of the film 5 (that is, the lead wiring).
  • the conductive film (Cu film in this embodiment) 5 connected to the through electrode 2 in which heat from the heat source (element formation surface (surface 1a) of the semiconductor substrate 1) is accumulated is the first. Since the surface area of the conductive film 5 having a high thermal conductivity is increased, the heat radiation efficiency can be further increased.
  • the heat radiating portion 5 a apart from the portion where the conductive film 5 becomes the lead wiring of the through electrode 2, the heat radiating portion 5 a (see FIG. 6) is formed on the back surface 1 b of the semiconductor substrate 1 outside the first recess 3. Therefore, the heat dissipation efficiency can be further improved.
  • a silicon oxide film formed by a CVD method is used as the first insulating film 4 formed on the back surface 1b of the semiconductor substrate 1.
  • an insulating material having a higher thermal conductivity than the silicon oxide film specifically, a thermal conductivity of 1.5 W / (m ⁇ K) or more
  • a low stress amorphous silicon nitride film thermal conductivity is about 4 W / (m ⁇ K) at maximum
  • a diamond-like carbon (DLC) film thermal conductivity is about 30 W / (m ⁇ K) at maximum
  • the DLC film is an amorphous carbon film in which both the sp 3 bond of diamond and the sp 2 bond of graphite have a skeleton structure of carbon atoms.
  • a method for forming the DLC film there are a plasma CVD method, a thermal CVD method, a photo CVD method, a sputtering method, and the like, which can be formed at a low temperature of about 200 ° C. (that is, a temperature range suitable for a semiconductor process).
  • the semiconductor device and the manufacturing method thereof according to this modification include chip-chip stacking (stacking of chip-state semiconductor devices obtained by wafer dicing), chip-wafer stacking (chip-state semiconductor device and pre-dicing semiconductor device).
  • the semiconductor device can be applied to any of the semiconductor devices in which the wafer state semiconductor device is stacked) or the wafer-wafer stack (lamination of the semiconductor devices in the wafer state) and the manufacturing method thereof.
  • FIGS. 8A to 8C and FIGS. 9A and 9B are cross-sectional views showing respective steps of the semiconductor device manufacturing method according to the second embodiment.
  • a semiconductor substrate 1 is prepared in which the through electrode 2 is buried so as not to be exposed on the opposite surface (back surface 1b) of the element formation surface.
  • Various functional elements such as the transistor 11 are formed on the element formation surface (front surface 1 a) side of the semiconductor substrate 1.
  • a wiring layer 12 having a multilayer wiring that is electrically connected to the through electrode 2 and the transistor 11 is formed on the surface 1 a of the semiconductor substrate 1.
  • the through electrode 2 has, for example, a 5 ⁇ m square shape in plan view from the back surface 1 b side of the semiconductor substrate 1.
  • the through electrode 2 is formed so as to reach the inside of the wiring layer 12, and the side wall of the through electrode 2 is covered with an insulating film 13 with a barrier film (not shown) interposed therebetween.
  • the thickness of the semiconductor substrate 1 is such that the semiconductor substrate 1 is polished from the back surface 1b side using, for example, CMP, and the through electrode 2 is exposed on the back surface 1b after the polishing. Thin out. Thereafter, by etching the back surface 1b of the semiconductor substrate 1, the end portion (bottom portion) of the through electrode 2 is raised from the back surface 1b after the etching, for example, by about 400 nm. At this time, the insulating film 13 covering the side wall of the protruding portion of the through electrode 2 may be removed.
  • a diamond-like carbon film having a thickness of, for example, about 200 nm is formed as an insulating film having high thermal conductivity on the back surface 1b of the semiconductor substrate 1 where the bottom of the through electrode 2 is exposed. 9 is formed.
  • a resist 10 having a thickness of, for example, about 500 nm is formed on the diamond-like carbon film 9.
  • the diamond-like carbon film 9 on the bottom surface of the through electrode 2 is selectively removed as shown in FIG. 9B.
  • the bottom surface of the through electrode 2 is exposed, and the diamond-like carbon is formed on the side wall of the through electrode 2 protruding from the back surface 1 b of the semiconductor substrate 1 and on the back surface 1 b of the semiconductor substrate 1 including the periphery of the through electrode 2.
  • the film 9 can remain.
  • an electrode 6 made of, for example, a solder bump is formed on the exposed bottom surface of the through electrode 2.
  • the semiconductor device of this embodiment is completed.
  • the diamond-like carbon film 9 having a maximum thermal conductivity of about 30 W / (m ⁇ K) is formed on the back surface 1b of the semiconductor substrate 1 where the through electrode 2 is exposed. For this reason, the heat generated on the element formation surface (front surface 1a) of the semiconductor substrate 1 and transmitted to the back surface 1b via the through electrode 2 can be dissipated very efficiently. Even when applied, the heat dissipation efficiency can be sufficiently improved. Further, since the diamond-like carbon film 9 has an insulating property, it is possible to reliably prevent an electrical short circuit between the through electrode 2 and the semiconductor substrate 1 due to the diamond-like carbon film 9.
  • the bottom of the through electrode 2 protrudes from the back surface 1b of the semiconductor substrate 1, and the diamond-like carbon film 9 is in contact with the side wall of the protruding portion. Can be improved.
  • the electrode 6 may not be formed if the height of the protruding portion of the through electrode 2 from the back surface 1b of the semiconductor substrate 1 is sufficient. Further, the bottom portion of the through electrode 2 may not protrude from the back surface 1 b of the semiconductor substrate 1.
  • the diamond-like carbon film 9 and the through electrode 2 may be separated from each other.
  • a first recess 3 that exposes at least an end surface (bottom surface) of the through electrode 2 may be provided on the back surface 1 b of the semiconductor substrate 1. In this way, since the substantial surface area of the back surface 1b of the semiconductor substrate 1 can be increased, the heat dissipation efficiency can be further improved.
  • the semiconductor device and the manufacturing method thereof include chip-chip stacking (stacking of chip-state semiconductor devices obtained by wafer dicing), chip-wafer stacking (chip-state semiconductor device and pre-dicing semiconductor device).
  • the semiconductor device can be applied to any of the semiconductor devices in which the wafer state semiconductor device is stacked) or the wafer-wafer stack (lamination of the semiconductor devices in the wafer state) and the manufacturing method thereof.
  • the semiconductor device and the manufacturing method thereof according to the present invention are provided by providing a heat radiation recess connected to the through electrode on the back surface of the substrate while preventing an electrical short circuit between the through electrode and the semiconductor substrate.
  • a heat radiation recess connected to the through electrode on the back surface of the substrate while preventing an electrical short circuit between the through electrode and the semiconductor substrate.
  • an insulating high heat dissipation material film that reaches the through electrode or the vicinity thereof on the back surface of the substrate, a heat dissipation structure with high heat dissipation efficiency is realized.
  • chip-chip stacking, chip-wafer stacking or This is useful in a wafer-wafer stacked semiconductor device, a manufacturing method thereof, and the like.

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Abstract

Selon l'invention, la surface opposée (1b) d'un substrat semi-conducteur (1), située au verso d'une surface de formation d'élément (1a) du substrat semi-conducteur (1), comporte un premier évidement (3) au travers duquel est exposée au moins une face d'extrémité d'une électrode traversante (2), et un second évidement (8) au travers duquel l'électrode traversante (2) n'est pas exposée. La surface opposée (1b) du substrat semi-conducteur (1) comporte un premier film isolant (4), de telle sorte que la surface intérieure du premier évidement (3), en-dehors de la face d'extrémité de l'électrode traversante (2), et la surface intérieure du second évidement (8) se trouvent recouvertes par le premier film isolant (4). Un film conducteur (5) est formé sur le premier film isolant (4) afin de s'étendre vers l'extérieur du premier évidement (3) tout en étant connecté à la face d'extrémité de l'électrode traversante (2).
PCT/JP2010/007013 2010-05-27 2010-12-01 Dispositif à semi-conducteurs et son procédé de fabrication WO2011148444A1 (fr)

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US20210407891A1 (en) * 2019-11-04 2021-12-30 Samsung Electronics Co., Ltd. Semiconductor package
EP4089725A4 (fr) * 2020-07-20 2023-08-30 Changxin Memory Technologies, Inc. Appareil à semi-conducteur, son procédé de préparation et circuit intégré tridimensionnel

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WO2023145445A1 (fr) 2022-01-27 2023-08-03 ソニーセミコンダクタソリューションズ株式会社 Dispositif à semi-conducteurs, son procédé de fabrication et appareil électronique

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