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WO2011046091A1 - Magnet device - Google Patents

Magnet device Download PDF

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Publication number
WO2011046091A1
WO2011046091A1 PCT/JP2010/067788 JP2010067788W WO2011046091A1 WO 2011046091 A1 WO2011046091 A1 WO 2011046091A1 JP 2010067788 W JP2010067788 W JP 2010067788W WO 2011046091 A1 WO2011046091 A1 WO 2011046091A1
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WO
WIPO (PCT)
Prior art keywords
magnetic
magnetic shield
shield
substrate
curved region
Prior art date
Application number
PCT/JP2010/067788
Other languages
French (fr)
Japanese (ja)
Inventor
敬仁 渡邊
眞子　隆志
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP2011536127A priority Critical patent/JPWO2011046091A1/en
Publication of WO2011046091A1 publication Critical patent/WO2011046091A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
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    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the present invention relates to a magnetic device.
  • the present invention relates to a magnetic device provided with a magnetic shield.
  • a magnetic element using a magnetic substance is known.
  • a magnetoresistive element Magnetic Resistance Element
  • a typical magnetoresistive element has a structure in which a non-magnetic layer is sandwiched between two magnetic layers. One magnetic layer is a magnetization fixed layer whose magnetization direction is fixed, and the other is a magnetization free layer whose magnetization direction can be reversed.
  • the resistance value of the magnetoresistive element configured in this way is higher when the magnetization fixed layer and the magnetization free layer are antiparallel than when the magnetization directions are parallel to each other.
  • a magnetic random access memory (MRAM) and various logic circuits can be configured.
  • a magnetic shield In a magnetic device using a magnetic element, it is important to prevent the magnetization state (magnetization direction, etc.) of the magnetic material from fluctuating due to external disturbances for its normal operation.
  • a “magnetic shield” is generally used.
  • Patent Document 1 Japanese Patent Laid-Open No. 2003-124538 discloses an information storage device in which the surface of a resin for sealing an MRAM chip is curved.
  • a resin mixed with high permeability powder is used for the resin sealing of the MRAM chip.
  • the periphery of the MRAM chip is hardened with a sealing resin mixed with a high magnetic permeability powder.
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2003-309196 discloses a magnetic shield package of a magnetic nonvolatile memory element.
  • FIG. 1 shows a cross-sectional structure of the magnetic shield package.
  • the magnetic shield package 110 includes an MRAM element 111, a wire 112, a lead frame 113, and a magnetic shield 114.
  • the MRAM element 111 is connected to the lead frame 113 by a wire 112. Further, the entire periphery of the MRAM element 111 is surrounded by a hollow magnetic shield 114.
  • the magnetic shield 114 is made of an insulating soft magnetic material and has a rectangular cross-sectional shape as shown in FIG.
  • Patent Document 1 has the following problems. That is, in the information storage device described in Patent Document 1, the surface of the resin that seals the MRAM chip is curved, but the periphery of the MRAM chip is solidified with a sealing resin mixed with high magnetic permeability powder. In addition, there is no space with low magnetic permeability between the sealing resin and the MRAM chip. In the case of this structure, a shielding effect against a high-frequency magnetic field variation may be obtained, but a shielding effect against a static magnetic field cannot be obtained. This is because the magnetic flux of the static magnetic field is concentrated in the high permeability region. Since the high magnetic permeability resin surrounding the MRAM chip concentrates the magnetic flux of the static magnetic field around the MRAM chip, the MRAM chip does not have a shielding effect but rather damages the MRAM chip.
  • An object of the present invention is to provide a technique capable of further improving the shielding effect in a magnetic device including a magnetic shield.
  • a magnetic device in one aspect of the present invention, includes a substrate, at least one magnetic element mounted on the first main surface of the substrate, and a magnetic shield of a soft magnetic material disposed on the first main surface side of the substrate.
  • the magnetic shield includes a curved region that curves so as to be convex when viewed from the substrate.
  • the curved region includes at least a region where the magnetic shield and the magnetic element overlap when viewed from the top surface of the substrate.
  • the space between the magnetic shield and the magnetic element is magnetically hollow.
  • the shielding effect is further improved in the magnetic device including the magnetic shield.
  • FIG. 1 is a cross-sectional view showing a typical magnetic shield package according to the related art.
  • FIG. 2 is a cross-sectional view showing the structure of the magnetic device according to the embodiment of the present invention.
  • FIG. 3 is a perspective view showing an example of the shape of the magnetic shield according to the present embodiment.
  • FIG. 4 is a perspective view showing another example of the shape of the magnetic shield according to the present embodiment.
  • FIG. 5 is a cross-sectional view showing the structure of the magnetic device according to the present embodiment.
  • FIG. 6 is a schematic diagram for explaining the effect of the magnetic shield according to the present embodiment.
  • FIG. 7 is a schematic diagram for explaining the simulation conditions.
  • FIG. 8 is a schematic diagram for explaining the simulation conditions.
  • FIG. 9 is a graph showing the curvature dependency of the shielding effect.
  • FIG. 10 is a graph showing the thickness dependence of the shielding effect.
  • FIG. 11 is a cross-sectional view showing a first modification of the magnetic device according to the present embodiment.
  • FIG. 12 is a cross-sectional view showing a second modification of the magnetic device according to the present embodiment.
  • FIG. 13 is a cross-sectional view showing a third modification of the magnetic device according to the present embodiment.
  • FIG. 14 is a cross-sectional view showing a fourth modification of the magnetic device according to the present embodiment.
  • FIG. 15 is a cross-sectional view showing a fifth modification of the magnetic device according to the present embodiment.
  • FIG. 16 is a cross-sectional view showing an example of a package of the magnetic device according to the present embodiment.
  • FIG. 11 is a cross-sectional view showing a first modification of the magnetic device according to the present embodiment.
  • FIG. 12 is a cross-sectional view showing a second modification of the magnetic device according to the present embodiment.
  • FIG. 13 is a cross-section
  • FIG. 17 is a cross-sectional view showing another example of the package of the magnetic device according to the present embodiment.
  • FIG. 18 is a cross-sectional view showing still another example of the package of the magnetic device according to the present embodiment.
  • FIG. 19 is a perspective view showing still another example of the package of the magnetic device according to the present embodiment.
  • FIG. 2 is a cross-sectional view showing the structure of the magnetic device 1 according to the embodiment of the present invention.
  • the magnetic device 1 includes a substrate 10, a magnetic element 20, and a magnetic shield 30.
  • the direction perpendicular to the surface of the substrate 10 is the Z direction
  • the plane directions perpendicular to the Z direction are the X direction and the Y direction.
  • the substrate 10 is a member on which the magnetic element 20 is mounted.
  • Examples of the substrate 10 include a wiring substrate, a lead frame, and a semiconductor substrate.
  • the substrate 10 has a first main surface (front surface) 11 on which the magnetic element 20 is mounted, and a second main surface (back surface) 12 opposite to the first main surface 11. ing.
  • the magnetic element 20 is an element using a magnetic material.
  • Examples of the magnetic element 20 include a magnetoresistive element, an MRAM chip, and a logic circuit using the magnetoresistive element.
  • at least one magnetic element 20 is mounted on the first main surface 11 of the substrate 10.
  • the magnetic shield 30 is made of a soft magnetic material.
  • This soft magnetic material has a sufficiently high relative magnetic permeability (preferably 1000 or more).
  • the soft magnetic material include iron, nickel, silicon steel, permalloy, ferrite, amorphous magnetic alloy, and nanocrystal magnetic alloy. If there is a concern about a short circuit between the magnetic shield 30 and an internal structure such as a bonding wire, an insulating magnetic material (ferrite, etc.) may be used as the material of the magnetic shield 30.
  • the surface of the magnetic shield 30 made of a conductive magnetic material may be coated with an insulator.
  • the magnetic shield 30 is at least disposed on the first main surface 11 side of the substrate 10. Furthermore, at least a part of the magnetic shield 30 is curved so as to be convex when viewed from the substrate 10.
  • the region where the magnetic shield 30 is curved is hereinafter referred to as “curved region RC”.
  • the curved region RC includes at least a region where the magnetic shield 30 and the magnetic element 20 overlap. In other words, the curved portion of the magnetic shield 30 covers the upper side of the magnetic element 20. In the example shown in FIG. 2, the curved region RC extends over the entire area of the magnetic shield 30.
  • FIG. 3 and 4 are perspective views showing examples of the shape of the magnetic shield 30.
  • the magnetic shield 30 has a dome shape.
  • the magnetic shield 30 has a tunnel shape (partial cylindrical shape).
  • the space MC between the magnetic shield 30 and the magnetic element 20 is “magnetically hollow”, and is hereinafter referred to as “magnetic cavity space MC”.
  • Magneticically hollow means that the magnetic permeability is extremely low (relative magnetic permeability ⁇ 1) compared to the magnetic shield 30 having high magnetic permeability (relative magnetic permeability> 1000).
  • the magnetic cavity space MC is physically hollow.
  • the magnetic cavity space MC may be filled with a nonmagnetic insulator 40.
  • the nonmagnetic insulator 40 is, for example, a molding resin.
  • the magnetic shield 30 has the curved region RC that is curved in a convex shape when viewed from the substrate 10. Therefore, the external magnetic field He in the Z direction is not perpendicular to the surface of the magnetic shield 30 at almost all positions in the curved region RC. As a result, as shown in FIG. 6, the magnetic flux of the external magnetic field He is efficiently guided into the high magnetic permeability magnetic shield 30 without penetrating the magnetic shield 30. In other words, the magnetic flux of the external magnetic field He is bent by the magnetic shield 30 in a direction away from the Z direction. In particular, since the curved region RC covers the magnetic element 20, the magnetic flux of the external magnetic field He is bent in a direction away from the magnetic element 20 above the magnetic element 20.
  • the magnetic permeability of the magnetic cavity space MC between the magnetic shield 30 and the magnetic element 20 is extremely lower than the magnetic permeability of the magnetic shield 30. Therefore, the magnetic flux once guided into the magnetic shield 30 having high permeability is effectively prevented from leaking into the magnetic cavity space MC.
  • the magnetic flux of the external magnetic field He reaching the vicinity of the magnetic element 20 is greatly reduced. That is, the shielding effect by the magnetic shield 30 is improved. For this reason, when an MRAM chip using a perpendicular magnetization film is employed as the magnetic element 20, the magnetic shield 30 of the present embodiment is particularly suitable.
  • the inventors of the present application have demonstrated the effect of this embodiment through simulation.
  • 7 and 8 are diagrams for explaining the simulation conditions.
  • the shape of the magnetic shield 30 is the tunnel shape (partial cylindrical shape) shown in FIG.
  • the length of the cylinder in the longitudinal direction is 20 mm.
  • the radius of curvature of the inner diameter of the cylinder is r [mm], and the curvature is 1 / r [/ mm].
  • the thickness of the magnetic shield 30 is d [mm].
  • the relative permeability of the magnetic shield 30 is 2000, and its saturation magnetization is 1 [T].
  • a magnet was disposed at a position 20 mm away from the bottom of the magnetic shield 30 in the Z direction.
  • the magnet has a plane area of 20 mm ⁇ 28 mm and a thickness of 50 mm.
  • the coercive force of the magnet is 3000 [Oe], and the residual magnetization is 4000 [G].
  • the shielding effect against the vertical magnetic field generated by this magnet was investigated.
  • FIG. 9 is a graph showing the curvature dependency of the shielding effect.
  • the vertical axis represents the vertical magnetic field [Oe] near the element, and the horizontal axis represents the curvature 1 / r [/ mm].
  • the thickness d is fixed at 0.15 mm.
  • FIG. 9 shows that the shielding effect is enhanced by curving the magnetic shield. However, if the curvature is too large, the shielding effect tends to weaken. A sufficient shielding effect is obtained when the curvature is 0.06 [/ mm] or less, which is preferable.
  • FIG. 10 is a graph showing the thickness dependence of the shielding effect.
  • the vertical axis represents the vertical magnetic field [Oe] near the element, and the horizontal axis represents the thickness d [mm].
  • the curvature radius r is fixed at 26 mm.
  • FIG. 10 shows that a certain thickness d is necessary to obtain a sufficient shielding effect.
  • the thickness d is 0.1 mm or less, the magnetic shield 30 is considered to be in a saturated state.
  • the demagnetizing field component inside the magnetic shield 30 is considered to be weak.
  • the shielding effect by the magnetic shield is improved.
  • the shielding effect is not limited to the external magnetic field in the Z direction.
  • the curved magnetic shield 30 achieves the same shielding effect for all directions.
  • FIG. 11 is a cross-sectional view showing a first modification example of the magnetic device 1.
  • the curved region RC may be only a part of the magnetic shield 30. Even in that case, the curved region RC includes at least a region where the magnetic element 20 and the magnetic shield 30 overlap.
  • FIG. 12 is a cross-sectional view showing a second modification example of the magnetic device 1.
  • magnetic shields 30 may be provided on both sides of the substrate 10 as shown in FIG. More specifically, the first magnetic shield 30A is arranged on the first main surface 11 side, and the second magnetic shield 30B is arranged on the second main surface 12 side.
  • Each of the magnetic shields 30 ⁇ / b> A and 30 ⁇ / b> B is the same as the magnetic shield 30. That is, each of the magnetic shields 30 ⁇ / b> A and 30 ⁇ / b> B is curved so as to be convex as viewed from the substrate 10.
  • the space MC between each of the magnetic shields 30A and 30B and the substrate 10 is magnetically hollow. According to this modification, the shielding effect is further improved.
  • FIG. 13 is a cross-sectional view showing a third modification of the magnetic device 1.
  • the outer peripheral surface of the magnetic shield 30 (surface opposite to the magnetic cavity space MC side) is covered with an external mold resin 50. Thereby, corrosion of the magnetic shield 30 is prevented, and workability is also improved.
  • magnetic powder may be mixed in the external mold resin 50 outside the magnetic shield 30. That is, the outer peripheral surface of the magnetic shield 30 (surface opposite to the magnetic cavity space MC side) may be covered with the external mold resin 50 mixed with magnetic powder. Thereby, the shielding effect as a whole further increases. Further, the magnetic flux emitted from the end of the magnetic shield 30 can be collected not on the magnetic cavity space MC but on the external mold resin 50 side due to the difference in magnetic permeability. The penetration of the magnetic flux into the magnetic cavity space MC is further suppressed, which is preferable.
  • FIG. 14 is a cross-sectional view showing a fourth modified example of the magnetic device 1.
  • the magnetic shield 30 is a metal magnetic shield formed of a conductive magnetic material.
  • the metal magnetic shield 30 is grounded.
  • the ground pad 61 is provided on the substrate 10, and the metal magnetic shield 30 is electrically connected to the ground pad 61 via the solder 62.
  • the grounded metal magnetic shield 30 also serves as an electromagnetic wave shield, which is preferable.
  • FIG. 15 is a cross-sectional view showing a fifth modification of the magnetic device 1.
  • a plurality of magnetic elements 20 are mounted on the substrate 10, and the magnetic shield 30 is provided in common so as to cover all of the plurality of magnetic elements 20.
  • two MRAM chips 20-1 and 20-2 are mounted on the wiring board 10, and the magnetic shield 30 is provided in common so as to cover both of the MRAM chips 20-1 and 20-2.
  • FIG. 15 shows a mode in which two MRAM chips 20-1 and 20-2 are arranged in the X-axis direction, but a mode in which a plurality of MRAM chips are arranged in the Y-axis direction, 2 in the X-axis direction and the Y-axis direction.
  • a dimensional arrangement is also possible.
  • FIG. 16 shows an example of a BGA (Ball Grid Array) package.
  • a magnetic element 20 is mounted on a wiring board 10 having solder balls 71 as external terminals.
  • the magnetic element 20 is, for example, an MRAM chip using a perpendicular magnetization film.
  • the adhesive layer 72 between the wiring board 10 and the MRAM chip 20 is DAF (Die Attach Film) or DAP (Die Attach Paste).
  • the MRAM chip 20 is electrically connected to the wiring board 10 via bonding wires 73.
  • the magnetic cavity space MC between the magnetic shield 30 and the wiring board 10 may be physically hollow or filled with a nonmagnetic insulator 40.
  • a nonmagnetic insulator 40 When a short circuit between the magnetic shield 30 and the bonding wire 73 is a concern, an insulating magnetic material (ferrite, etc.) may be used as the material of the magnetic shield 30.
  • the surface of the magnetic shield 30 made of a conductive magnetic material may be coated with an insulator.
  • the magnetic shield 30 may be fixed to the wiring board 10 with an adhesive 74.
  • the adhesive 74 may be omitted.
  • the magnetic shield 30 is a metal magnetic shield, the metal magnetic shield 30 is electrically connected to the ground pad of the wiring board 10 via a conductive member (solder, conductive resin, conductive adhesive, etc.). It may be connected.
  • the outer peripheral surface of the magnetic shield 30 may be covered with an external mold resin 50 mixed with magnetic powder.
  • FIG. 17 shows an example of FCBGA (Flip Chip Chip Ball Grid Array) package.
  • a magnetic element 20 is mounted on a wiring board 10 having solder balls 81 as external terminals.
  • the magnetic element 20 is, for example, an MRAM chip using a perpendicular magnetization film.
  • Solder bumps 82 as connection terminals are formed on the MRAM chip 20, and the MRAM chip 20 is electrically connected to the wiring substrate 10 via the solder bumps 82.
  • the magnetic cavity space MC between the magnetic shield 30 and the wiring board 10 may be physically hollow or filled with a nonmagnetic insulator 40.
  • the magnetic shield 30 may be fixed to the wiring board 10 with an adhesive 84.
  • the adhesive 84 may not be required.
  • the magnetic shield 30 is a metal magnetic shield, the metal magnetic shield 30 is electrically connected to the ground pad of the wiring board 10 via a conductive member (solder, conductive resin, conductive adhesive, etc.). It may be connected.
  • the outer peripheral surface of the magnetic shield 30 may be covered with an external mold resin 50 mixed with magnetic powder.
  • FIG. 18 shows an example of QFP (Quad Flat Package).
  • a magnetic element 20 is mounted on a die pad 91 corresponding to the substrate 10.
  • the magnetic element 20 is, for example, an MRAM chip using a perpendicular magnetization film.
  • the adhesive layer 92 between the die pad 91 and the MRAM chip 20 is DAF or DAP.
  • the MRAM chip 20 is electrically connected to a lead frame 95 as an external terminal via a bonding wire 93.
  • the magnetic shield 30 is placed on the lead frame 95. Therefore, it is desirable that the magnetic shield 30 is formed of an insulating magnetic material, or the conductive magnetic shield 30 is coated with an insulating material.
  • the magnetic shield 30 may be fixed to the lead frame 95 with an insulating adhesive 94.
  • the magnetic cavity space MC inside the magnetic shield 30 may be physically hollow or may be filled with a nonmagnetic insulator 40.
  • the outer peripheral surface of the magnetic shield 30 may be covered with an external mold resin 50 mixed with magnetic powder.
  • the first magnetic shield 30A and the second magnetic shield 30B are respectively disposed on both sides of the die pad 91 (substrate 10).
  • the second magnetic shield 30B is removed, the effects of the present invention can be obtained.
  • FIG. 19 shows an example of a multichip module package.
  • a plurality of MRAM chips 20 ⁇ / b> A are mounted on the substrate 10.
  • the MRAM chip 20A and another semiconductor chip 20B may be mixedly mounted in one package.
  • the magnetic shield 30 is provided so as to cover all the chips.

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Abstract

Disclosed is a magnet device provided with a substrate, at least one magnet element mounted on a first principal surface of the substrate, and a soft-magnetic magnetic shield disposed on the first-principal-surface side of the substrate. The magnetic shield includes a curved region that is curved convexly, as seen from the substrate. The curved region includes at least the region where the magnetic shield and a magnet element overlap, as seen from the top surface of the substrate. The space between the magnetic shield and the magnet element is a magnetic cavity.

Description

磁性体装置Magnetic device
　本発明は、磁性体装置に関する。特に、本発明は、磁気シールドを備えた磁性体装置に関する。 The present invention relates to a magnetic device. In particular, the present invention relates to a magnetic device provided with a magnetic shield.
　磁性体を利用した磁性体素子が知られている。例えば、磁気抵抗素子（Magneto Resistance
Element）は、磁性体の磁化状態に応じて抵抗値が変わる磁性体素子である。典型的な磁気抵抗素子は、２層の磁性体層に非磁性体層が挟まれた構造を有している。一方の磁性体層は、磁化方向が固定された磁化固定層であり、他方は、磁化方向が反転可能な磁化自由層である。このように構成された磁気抵抗素子の抵抗値は、磁化固定層と磁化自由層の磁化方向が互いに平行である場合よりも、それらが反平行である場合により高くなる。このような磁気抵抗素子を利用することによって、磁気ランダムアクセスメモリ（MRAM: Magnetic Random Access Memory）や様々な論理回路を構成可能である。 A magnetic element using a magnetic substance is known. For example, a magnetoresistive element (Magneto Resistance)
Element) is a magnetic element whose resistance value changes according to the magnetization state of the magnetic substance. A typical magnetoresistive element has a structure in which a non-magnetic layer is sandwiched between two magnetic layers. One magnetic layer is a magnetization fixed layer whose magnetization direction is fixed, and the other is a magnetization free layer whose magnetization direction can be reversed. The resistance value of the magnetoresistive element configured in this way is higher when the magnetization fixed layer and the magnetization free layer are antiparallel than when the magnetization directions are parallel to each other. By using such a magnetoresistive element, a magnetic random access memory (MRAM) and various logic circuits can be configured.
　磁性体素子を用いた磁性体装置では、その正常動作のために、磁性体の磁化状態（磁化方向等）が外部擾乱によって変動することを防ぐことが重要である。そのために、一般的に、「磁気シールド（magnetic shield）」が利用される。 In a magnetic device using a magnetic element, it is important to prevent the magnetization state (magnetization direction, etc.) of the magnetic material from fluctuating due to external disturbances for its normal operation. For this purpose, a “magnetic shield” is generally used.
　特許文献１（特開２００３－１２４５３８号公報）には、ＭＲＡＭチップを封止する樹脂の表面が湾曲している情報記憶装置が開示されている。ＭＲＡＭチップの樹脂封止には、高透磁率粉末が混合された樹脂が用いられている。言い換えれば、ＭＲＡＭチップの周囲が、高透磁率粉末が混合された封止樹脂で固められている。 Patent Document 1 (Japanese Patent Laid-Open No. 2003-124538) discloses an information storage device in which the surface of a resin for sealing an MRAM chip is curved. For the resin sealing of the MRAM chip, a resin mixed with high permeability powder is used. In other words, the periphery of the MRAM chip is hardened with a sealing resin mixed with a high magnetic permeability powder.
　特許文献２（特開２００３－３０９１９６号公報）には、磁気不揮発性メモリ素子の磁気シールドパッケージが開示されている。図１は、その磁気シールドパッケージの断面構造を示している。磁気シールドパッケージ１１０は、ＭＲＡＭ素子１１１、ワイヤ１１２、リードフレーム１１３、及び磁気シールド１１４を備えている。ＭＲＡＭ素子１１１は、ワイヤ１１２でリードフレーム１１３に接続されている。更に、ＭＲＡＭ素子１１１は、その周囲全体が中空の磁気シールド１１４に囲まれている。磁気シールド１１４は、絶縁性の軟磁性材料で形成され、図１に示されるように矩形の断面形状を有している。 Patent Document 2 (Japanese Patent Application Laid-Open No. 2003-309196) discloses a magnetic shield package of a magnetic nonvolatile memory element. FIG. 1 shows a cross-sectional structure of the magnetic shield package. The magnetic shield package 110 includes an MRAM element 111, a wire 112, a lead frame 113, and a magnetic shield 114. The MRAM element 111 is connected to the lead frame 113 by a wire 112. Further, the entire periphery of the MRAM element 111 is surrounded by a hollow magnetic shield 114. The magnetic shield 114 is made of an insulating soft magnetic material and has a rectangular cross-sectional shape as shown in FIG.
特開２００３－１２４５３８号公報JP 2003-124538 A 特開２００３－３０９１９６号公報JP 2003-309196 A
　しかしながら、特許文献１に記載の技術には、以下に示すような問題点が存在する。即ち、特許文献１に記載の情報記憶装置は、ＭＲＡＭチップを封止する樹脂の表面が湾曲した態様であるが、ＭＲＡＭチップの周囲が高透磁率粉末が混合された封止樹脂で固められており、封止樹脂とＭＲＡＭチップの間に透磁率の低い空間が存在しない。この構造の場合、高周波の磁界変動に対するシールド効果は得られるかもしれないが、静磁界に対するシールド効果は得られない。それは、静磁界の磁束は高透磁率領域に集中するためである。ＭＲＡＭチップを取り囲む高透磁率樹脂は、ＭＲＡＭチップの周りに静磁界の磁束を集中させるため、そのＭＲＡＭチップに対してシールド効果ではなく、むしろダメージを与えてしまう。 However, the technique described in Patent Document 1 has the following problems. That is, in the information storage device described in Patent Document 1, the surface of the resin that seals the MRAM chip is curved, but the periphery of the MRAM chip is solidified with a sealing resin mixed with high magnetic permeability powder. In addition, there is no space with low magnetic permeability between the sealing resin and the MRAM chip. In the case of this structure, a shielding effect against a high-frequency magnetic field variation may be obtained, but a shielding effect against a static magnetic field cannot be obtained. This is because the magnetic flux of the static magnetic field is concentrated in the high permeability region. Since the high magnetic permeability resin surrounding the MRAM chip concentrates the magnetic flux of the static magnetic field around the MRAM chip, the MRAM chip does not have a shielding effect but rather damages the MRAM chip.
　一方、図１で示された特許文献２の構造の場合、ＭＲＡＭ素子１１１と磁気シールド１１４との間に透磁率の低い空間が存在する。しかしながら、ＭＲＡＭ素子１１１の上方において、磁気シールド１１４は水平（デバイス面に平行）である。このため、その水平磁気シールド１１４に対して垂直な外部磁界Ｈｅが印加された場合、理論的には、その外部磁界Ｈｅは磁気シールド１１４を貫通して、磁気シールド１１４より内側のＭＲＡＭ素子１１１近傍に達してしまう。すなわち、所望のシールド効果が十分に得られない。 On the other hand, in the case of the structure of Patent Document 2 shown in FIG. 1, a space with low magnetic permeability exists between the MRAM element 111 and the magnetic shield 114. However, above the MRAM element 111, the magnetic shield 114 is horizontal (parallel to the device surface). Therefore, when an external magnetic field He perpendicular to the horizontal magnetic shield 114 is applied, theoretically, the external magnetic field He penetrates the magnetic shield 114 and is near the MRAM element 111 inside the magnetic shield 114. Will be reached. That is, the desired shielding effect cannot be obtained sufficiently.
　本発明の目的は、磁気シールドを備える磁性体装置において、シールド効果をより向上させることができる技術を提供することにある。 An object of the present invention is to provide a technique capable of further improving the shielding effect in a magnetic device including a magnetic shield.
　本発明の１つの観点において、磁性体装置が提供される。その磁性体装置は、基板と、基板の第１主面上に搭載された少なくとも１つの磁性体素子と、基板の第１主面側に配置された軟磁性体の磁気シールドと、を備える。磁気シールドは、基板から見て凸になるように湾曲する湾曲領域を含む。その湾曲領域は、少なくとも、基板上面から見て磁気シールドと磁性体素子とがオーバーラップする領域を含む。磁気シールドと磁性体素子との間の空間は、磁気的に空洞である。 In one aspect of the present invention, a magnetic device is provided. The magnetic device includes a substrate, at least one magnetic element mounted on the first main surface of the substrate, and a magnetic shield of a soft magnetic material disposed on the first main surface side of the substrate. The magnetic shield includes a curved region that curves so as to be convex when viewed from the substrate. The curved region includes at least a region where the magnetic shield and the magnetic element overlap when viewed from the top surface of the substrate. The space between the magnetic shield and the magnetic element is magnetically hollow.
　本発明によれば、磁気シールドを備える磁性体装置において、シールド効果がより向上する。 According to the present invention, the shielding effect is further improved in the magnetic device including the magnetic shield.
　上記及び他の目的、長所、特徴は、次の図面と共に説明される本発明の実施の形態により明らかになるであろう。 The above and other objects, advantages, and features will become apparent from the embodiments of the present invention described in conjunction with the following drawings.
図１は、関連技術に係る典型的な磁気シールドパッケージを示す断面図である。FIG. 1 is a cross-sectional view showing a typical magnetic shield package according to the related art. 図２は、本発明の実施の形態に係る磁性体装置の構造を示す断面図である。FIG. 2 is a cross-sectional view showing the structure of the magnetic device according to the embodiment of the present invention. 図３は、本実施の形態に係る磁気シールドの形状の一例を示す斜視図である。FIG. 3 is a perspective view showing an example of the shape of the magnetic shield according to the present embodiment. 図４は、本実施の形態に係る磁気シールドの形状の他の例を示す斜視図である。FIG. 4 is a perspective view showing another example of the shape of the magnetic shield according to the present embodiment. 図５は、本実施の形態に係る磁性体装置の構造を示す断面図である。FIG. 5 is a cross-sectional view showing the structure of the magnetic device according to the present embodiment. 図６は、本実施の形態に係る磁気シールドによる効果を説明するための概略図である。FIG. 6 is a schematic diagram for explaining the effect of the magnetic shield according to the present embodiment. 図７は、シミュレーション条件を説明するための概略図である。FIG. 7 is a schematic diagram for explaining the simulation conditions. 図８は、シミュレーション条件を説明するための概略図である。FIG. 8 is a schematic diagram for explaining the simulation conditions. 図９は、シールド効果の曲率依存性を示すグラフである。FIG. 9 is a graph showing the curvature dependency of the shielding effect. 図１０は、シールド効果の厚さ依存性を示すグラフである。FIG. 10 is a graph showing the thickness dependence of the shielding effect. 図１１は、本実施の形態に係る磁性体装置の第１の変形例を示す断面図である。FIG. 11 is a cross-sectional view showing a first modification of the magnetic device according to the present embodiment. 図１２は、本実施の形態に係る磁性体装置の第２の変形例を示す断面図である。FIG. 12 is a cross-sectional view showing a second modification of the magnetic device according to the present embodiment. 図１３は、本実施の形態に係る磁性体装置の第３の変形例を示す断面図である。FIG. 13 is a cross-sectional view showing a third modification of the magnetic device according to the present embodiment. 図１４は、本実施の形態に係る磁性体装置の第４の変形例を示す断面図である。FIG. 14 is a cross-sectional view showing a fourth modification of the magnetic device according to the present embodiment. 図１５は、本実施の形態に係る磁性体装置の第５の変形例を示す断面図である。FIG. 15 is a cross-sectional view showing a fifth modification of the magnetic device according to the present embodiment. 図１６は、本実施の形態に係る磁性体装置のパッケージの一例を示す断面図である。FIG. 16 is a cross-sectional view showing an example of a package of the magnetic device according to the present embodiment. 図１７は、本実施の形態に係る磁性体装置のパッケージの他の例を示す断面図である。FIG. 17 is a cross-sectional view showing another example of the package of the magnetic device according to the present embodiment. 図１８は、本実施の形態に係る磁性体装置のパッケージの更に他の例を示す断面図である。FIG. 18 is a cross-sectional view showing still another example of the package of the magnetic device according to the present embodiment. 図１９は、本実施の形態に係る磁性体装置のパッケージの更に他の例を示す斜視図である。FIG. 19 is a perspective view showing still another example of the package of the magnetic device according to the present embodiment.
　添付図面を参照して、本発明の実施の形態に係る磁性体装置を説明する。 A magnetic device according to an embodiment of the present invention will be described with reference to the accompanying drawings.
　１．基本構造
　図２は、本発明の実施の形態に係る磁性体装置１の構造を示す断面図である。図２に示されるように、磁性体装置１は、基板１０、磁性体素子２０、及び磁気シールド３０を備えている。以下の説明において、基板１０の表面に垂直な方向はＺ方向であり、Ｚ方向に直交する平面方向は、Ｘ方向及びＹ方向である。 1. Basic Structure FIG. 2 is a cross-sectional view showing the structure of the magnetic device 1 according to the embodiment of the present invention. As shown in FIG. 2, the magnetic device 1 includes a substrate 10, a magnetic element 20, and a magnetic shield 30. In the following description, the direction perpendicular to the surface of the substrate 10 is the Z direction, and the plane directions perpendicular to the Z direction are the X direction and the Y direction.
　基板１０は、磁性体素子２０が搭載される部材である。基板１０としては、配線基板、リードフレーム、半導体基板などが挙げられる。図２に示されるように、基板１０は、磁性体素子２０が搭載される第１主面（表面）１１と、第１主面１１の逆側の第２主面（裏面）１２を有している。 The substrate 10 is a member on which the magnetic element 20 is mounted. Examples of the substrate 10 include a wiring substrate, a lead frame, and a semiconductor substrate. As shown in FIG. 2, the substrate 10 has a first main surface (front surface) 11 on which the magnetic element 20 is mounted, and a second main surface (back surface) 12 opposite to the first main surface 11. ing.
　磁性体素子２０は、磁性体を利用した素子である。磁性体素子２０としては、磁気抵抗素子、ＭＲＡＭチップ、磁気抵抗素子を利用した論理回路などが挙げられる。本実施の形態では、少なくとも１つの磁性体素子２０が、基板１０の第１主面１１上に搭載される。 The magnetic element 20 is an element using a magnetic material. Examples of the magnetic element 20 include a magnetoresistive element, an MRAM chip, and a logic circuit using the magnetoresistive element. In the present embodiment, at least one magnetic element 20 is mounted on the first main surface 11 of the substrate 10.
　磁気シールド３０は、軟磁性体材料で形成されている。この軟磁性体材料は、十分に高い比透磁率（好ましくは、１０００以上）を有している。軟磁性体材料としては、鉄、ニッケル、珪素鋼、パーマロイ、フェライト、アモルファス磁性合金、ナノクリスタル磁性合金などが挙げられる。尚、磁気シールド３０とボンディングワイヤ等の内部構造との間のショートが懸念される場合、磁気シールド３０の材料として、絶縁性磁性体（フェライト、等）が用いられてもよい。あるいは、導電性磁性体の磁気シールド３０の表面が、絶縁体でコーティングされてもよい。 The magnetic shield 30 is made of a soft magnetic material. This soft magnetic material has a sufficiently high relative magnetic permeability (preferably 1000 or more). Examples of the soft magnetic material include iron, nickel, silicon steel, permalloy, ferrite, amorphous magnetic alloy, and nanocrystal magnetic alloy. If there is a concern about a short circuit between the magnetic shield 30 and an internal structure such as a bonding wire, an insulating magnetic material (ferrite, etc.) may be used as the material of the magnetic shield 30. Alternatively, the surface of the magnetic shield 30 made of a conductive magnetic material may be coated with an insulator.
　図２に示されるように、磁気シールド３０は、基板１０の第１主面１１側に少なくとも配置されている。更に、磁気シールド３０の少なくとも一部分は、基板１０から見て凸になるように湾曲している。磁気シールド３０が湾曲している領域は、以下「湾曲領域ＲＣ」と参照される。本実施の形態では、湾曲領域ＲＣは、少なくとも、磁気シールド３０と磁性体素子２０とがオーバーラップしている領域を含む。言い換えれば、磁気シールド３０の湾曲部分が、磁性体素子２０の上方を覆っている。図２で示された例では、湾曲領域ＲＣは、磁気シールド３０の全域にわたっている。 As shown in FIG. 2, the magnetic shield 30 is at least disposed on the first main surface 11 side of the substrate 10. Furthermore, at least a part of the magnetic shield 30 is curved so as to be convex when viewed from the substrate 10. The region where the magnetic shield 30 is curved is hereinafter referred to as “curved region RC”. In the present embodiment, the curved region RC includes at least a region where the magnetic shield 30 and the magnetic element 20 overlap. In other words, the curved portion of the magnetic shield 30 covers the upper side of the magnetic element 20. In the example shown in FIG. 2, the curved region RC extends over the entire area of the magnetic shield 30.
　図３及び図４は、磁気シールド３０の形状の例を示す斜視図である。図３の例では、磁気シールド３０はドーム形状を有している。図４の例では、磁気シールド３０は、トンネル形状（部分円筒形状）を有している。 3 and 4 are perspective views showing examples of the shape of the magnetic shield 30. FIG. In the example of FIG. 3, the magnetic shield 30 has a dome shape. In the example of FIG. 4, the magnetic shield 30 has a tunnel shape (partial cylindrical shape).
　再度図２を参照して説明する。磁気シールド３０と磁性体素子２０との間の空間ＭＣは、“磁気的に空洞”であり、以下「磁気空洞空間ＭＣ」と参照される。“磁気的に空洞”とは、高透磁率の磁気シールド３０（比透磁率＞１０００）に比べて、透磁率が極めて低い（比透磁率～１）ことを意味する。例えば、図２に示されるように、磁気空洞空間ＭＣは、物理的に空洞である。あるいは、図５に示されるように、磁気空洞空間ＭＣは、非磁性絶縁体４０で充填されていてもよい。非磁性絶縁体４０は、例えば、モールド樹脂（molding compound）である。 Explanation will be made with reference to FIG. 2 again. The space MC between the magnetic shield 30 and the magnetic element 20 is “magnetically hollow”, and is hereinafter referred to as “magnetic cavity space MC”. “Magnetically hollow” means that the magnetic permeability is extremely low (relative magnetic permeability˜1) compared to the magnetic shield 30 having high magnetic permeability (relative magnetic permeability> 1000). For example, as shown in FIG. 2, the magnetic cavity space MC is physically hollow. Alternatively, as shown in FIG. 5, the magnetic cavity space MC may be filled with a nonmagnetic insulator 40. The nonmagnetic insulator 40 is, for example, a molding resin.
　２．作用、効果
　図６を参照して、本実施の形態に係る構造による効果を説明する。ここでは、デバイス面（基板１０の表面）に垂直なＺ方向の外部磁界Ｈｅを考える。 2. Action and Effect With reference to FIG. 6, the effect of the structure according to the present embodiment will be described. Here, an external magnetic field He in the Z direction perpendicular to the device surface (the surface of the substrate 10) is considered.
　上述の通り、磁気シールド３０は、基板１０から見て凸形状に湾曲した湾曲領域ＲＣを有している。従って、湾曲領域ＲＣのほとんど全ての位置で、Ｚ方向の外部磁界Ｈｅが磁気シールド３０の表面に対して垂直でなくなる。その結果、図６に示されるように、外部磁界Ｈｅの磁束は、磁気シールド３０を貫通することなく、高透磁率の磁気シールド３０内部に効率的にガイドされる。言い換えれば、外部磁界Ｈｅの磁束は、磁気シールド３０によって、Ｚ方向から離れる方向に曲げられる。特に、湾曲領域ＲＣは磁性体素子２０の上方を覆っているため、外部磁界Ｈｅの磁束は、磁性体素子２０の上方において、磁性体素子２０から離れる方向に曲げられる。 As described above, the magnetic shield 30 has the curved region RC that is curved in a convex shape when viewed from the substrate 10. Therefore, the external magnetic field He in the Z direction is not perpendicular to the surface of the magnetic shield 30 at almost all positions in the curved region RC. As a result, as shown in FIG. 6, the magnetic flux of the external magnetic field He is efficiently guided into the high magnetic permeability magnetic shield 30 without penetrating the magnetic shield 30. In other words, the magnetic flux of the external magnetic field He is bent by the magnetic shield 30 in a direction away from the Z direction. In particular, since the curved region RC covers the magnetic element 20, the magnetic flux of the external magnetic field He is bent in a direction away from the magnetic element 20 above the magnetic element 20.
　更に、磁気シールド３０と磁性体素子２０との間の磁気空洞空間ＭＣの透磁率は、磁気シールド３０の透磁率に比べて極めて低い。従って、高透磁率の磁気シールド３０内部に一旦ガイドされた磁束が、磁気空洞空間ＭＣに漏れ出すことが効果的に防止される。このように、本実施の形態によれば、磁性体素子２０の近傍にまで到達する外部磁界Ｈｅの磁束が大幅に低減される。すなわち、磁気シールド３０によるシールド効果が向上する。このため、磁性体素子２０として垂直磁化膜を利用したＭＲＡＭチップを採用した場合、本実施の形態の磁気シールド３０は特に好適である。 Furthermore, the magnetic permeability of the magnetic cavity space MC between the magnetic shield 30 and the magnetic element 20 is extremely lower than the magnetic permeability of the magnetic shield 30. Therefore, the magnetic flux once guided into the magnetic shield 30 having high permeability is effectively prevented from leaking into the magnetic cavity space MC. Thus, according to the present embodiment, the magnetic flux of the external magnetic field He reaching the vicinity of the magnetic element 20 is greatly reduced. That is, the shielding effect by the magnetic shield 30 is improved. For this reason, when an MRAM chip using a perpendicular magnetization film is employed as the magnetic element 20, the magnetic shield 30 of the present embodiment is particularly suitable.
　本願発明者らは、シミュレーションを通して、本実施の形態による効果を実証した。図７及び図８は、シミュレーション条件を説明するための図である。磁気シールド３０の形状は、図４で示されたトンネル形状（部分円筒形状）である。円筒の長手方向の長さは２０ｍｍである。円筒の内径の曲率半径はｒ［ｍｍ］であり、その曲率は１／ｒ［／ｍｍ］である。磁気シールド３０の厚さはｄ［ｍｍ］である。磁気シールド３０の比透磁率は２０００であり、その飽和磁化は１［Ｔ］である。また、磁気シールド３０の底部からＺ方向に２０ｍｍ離れた位置に、磁石が配置された。その磁石の平面積は２０ｍｍ×２８ｍｍであり、その厚さは５０ｍｍである。その磁石の保磁力は３０００［Ｏｅ］であり、残留磁化は４０００［Ｇ］である。この磁石により生成される垂直磁界に対するシールド効果が調べられた。 The inventors of the present application have demonstrated the effect of this embodiment through simulation. 7 and 8 are diagrams for explaining the simulation conditions. The shape of the magnetic shield 30 is the tunnel shape (partial cylindrical shape) shown in FIG. The length of the cylinder in the longitudinal direction is 20 mm. The radius of curvature of the inner diameter of the cylinder is r [mm], and the curvature is 1 / r [/ mm]. The thickness of the magnetic shield 30 is d [mm]. The relative permeability of the magnetic shield 30 is 2000, and its saturation magnetization is 1 [T]. A magnet was disposed at a position 20 mm away from the bottom of the magnetic shield 30 in the Z direction. The magnet has a plane area of 20 mm × 28 mm and a thickness of 50 mm. The coercive force of the magnet is 3000 [Oe], and the residual magnetization is 4000 [G]. The shielding effect against the vertical magnetic field generated by this magnet was investigated.
　図９は、シールド効果の曲率依存性を示すグラフである。縦軸は素子近傍の垂直磁界［Ｏｅ］を表し、横軸は曲率１／ｒ［／ｍｍ］を表している。厚さｄは０．１５ｍｍに固定されている。曲率１／ｒ＝０の場合は、図１で示された水平の磁気シールドに相当する。図９から、磁気シールドを湾曲させることによってシールド効果が高まっていることが分かる。但し、曲率があまりにも大きくなり過ぎると、シールド効果が弱くなる傾向もある。曲率が０．０６［／ｍｍ］以下であると十分なシールド効果が得られ、好適である。 FIG. 9 is a graph showing the curvature dependency of the shielding effect. The vertical axis represents the vertical magnetic field [Oe] near the element, and the horizontal axis represents the curvature 1 / r [/ mm]. The thickness d is fixed at 0.15 mm. The curvature 1 / r = 0 corresponds to the horizontal magnetic shield shown in FIG. FIG. 9 shows that the shielding effect is enhanced by curving the magnetic shield. However, if the curvature is too large, the shielding effect tends to weaken. A sufficient shielding effect is obtained when the curvature is 0.06 [/ mm] or less, which is preferable.
　図１０は、シールド効果の厚さ依存性を示すグラフである。縦軸は素子近傍の垂直磁界［Ｏｅ］を表し、横軸は厚さｄ［ｍｍ］を表している。曲率半径ｒは２６ｍｍに固定されている。図１０から、十分なシールド効果を得るためには、ある程度の厚さｄが必要であることが分かる。厚さｄが０．１ｍｍ以下の場合、磁気シールド３０は飽和状態にあると考えられる。一方、厚さｄが５ｍｍ以上になると、磁気シールド３０内部の反磁界成分が弱くなると考えられる。 FIG. 10 is a graph showing the thickness dependence of the shielding effect. The vertical axis represents the vertical magnetic field [Oe] near the element, and the horizontal axis represents the thickness d [mm]. The curvature radius r is fixed at 26 mm. FIG. 10 shows that a certain thickness d is necessary to obtain a sufficient shielding effect. When the thickness d is 0.1 mm or less, the magnetic shield 30 is considered to be in a saturated state. On the other hand, when the thickness d is 5 mm or more, the demagnetizing field component inside the magnetic shield 30 is considered to be weak.
　以上に説明されたように、本実施の形態によれば、磁気シールドによるシールド効果が向上する。尚、シールド効果は、Ｚ方向の外部磁界に対してだけに限られない。湾曲した磁気シールド３０によって、全方位に対するシールド効果が同様に実現される。 As described above, according to the present embodiment, the shielding effect by the magnetic shield is improved. The shielding effect is not limited to the external magnetic field in the Z direction. The curved magnetic shield 30 achieves the same shielding effect for all directions.
　３．変形例
　３－１．第１の変形例
　図１１は、磁性体装置１の第１の変形例を示す断面図である。図１１に示されるように、湾曲領域ＲＣは、磁気シールド３０のうち一部分だけであってもよい。その場合でも、湾曲領域ＲＣは、磁性体素子２０と磁気シールド３０とがオーバーラップする領域を少なくとも含んでいる。 3. Modified example 3-1. First Modification Example FIG. 11 is a cross-sectional view showing a first modification example of the magnetic device 1. As shown in FIG. 11, the curved region RC may be only a part of the magnetic shield 30. Even in that case, the curved region RC includes at least a region where the magnetic element 20 and the magnetic shield 30 overlap.
　３－２．第２の変形例
　図１２は、磁性体装置１の第２の変形例を示す断面図である。パッケージ構造が許せば、図１２に示されるように、基板１０の両側に磁気シールド３０が設けられてもよい。より詳細には、第１磁気シールド３０Ａが第１主面１１側に配置され、第２磁気シールド３０Ｂが第２主面１２側に配置されている。磁気シールド３０Ａ、３０Ｂの各々は、磁気シールド３０と同様である。すなわち、磁気シールド３０Ａ、３０Ｂの各々は、基板１０から見て凸になるように湾曲している。更に、磁気シールド３０Ａ、３０Ｂの各々と基板１０との間の空間ＭＣは、磁気的に空洞である。本変形例によれば、シールド効果が更に向上する。 3-2. Second Modification Example FIG. 12 is a cross-sectional view showing a second modification example of the magnetic device 1. If the package structure permits, magnetic shields 30 may be provided on both sides of the substrate 10 as shown in FIG. More specifically, the first magnetic shield 30A is arranged on the first main surface 11 side, and the second magnetic shield 30B is arranged on the second main surface 12 side. Each of the magnetic shields 30 </ b> A and 30 </ b> B is the same as the magnetic shield 30. That is, each of the magnetic shields 30 </ b> A and 30 </ b> B is curved so as to be convex as viewed from the substrate 10. Furthermore, the space MC between each of the magnetic shields 30A and 30B and the substrate 10 is magnetically hollow. According to this modification, the shielding effect is further improved.
　３－３．第３の変形例
　磁気シールド３０の外周面は露出していてもよいが、腐食防止や加工性を考えると、磁気シールド３０の外側も樹脂封止した方が望ましい。図１３は、磁性体装置１の第３の変形例を示す断面図である。図１３において、磁気シールド３０の外周面（磁気空洞空間ＭＣ側と逆側の面）は、外部モールド樹脂５０によって覆われている。これにより、磁気シールド３０の腐食が防止され、また、加工性も向上する。 3-3. Third Modification Although the outer peripheral surface of the magnetic shield 30 may be exposed, it is desirable that the outer side of the magnetic shield 30 is also resin-sealed in view of corrosion prevention and workability. FIG. 13 is a cross-sectional view showing a third modification of the magnetic device 1. In FIG. 13, the outer peripheral surface of the magnetic shield 30 (surface opposite to the magnetic cavity space MC side) is covered with an external mold resin 50. Thereby, corrosion of the magnetic shield 30 is prevented, and workability is also improved.
　更に、磁気シールド３０の外側の外部モールド樹脂５０には、磁性体粉が混合されていてもよい。すなわち、磁気シールド３０の外周面（磁気空洞空間ＭＣ側と逆側の面）は、磁性体粉が混合された外部モールド樹脂５０によって覆われていてもよい。これにより、全体としてのシールド効果が更に高まる。また、磁気シールド３０の端部から放出される磁束を、透磁率の差により、磁気空洞空間ＭＣではなく外部モールド樹脂５０側に集めることができる。磁束の磁気空洞空間ＭＣへの侵入が更に抑制され、好適である。 Furthermore, magnetic powder may be mixed in the external mold resin 50 outside the magnetic shield 30. That is, the outer peripheral surface of the magnetic shield 30 (surface opposite to the magnetic cavity space MC side) may be covered with the external mold resin 50 mixed with magnetic powder. Thereby, the shielding effect as a whole further increases. Further, the magnetic flux emitted from the end of the magnetic shield 30 can be collected not on the magnetic cavity space MC but on the external mold resin 50 side due to the difference in magnetic permeability. The penetration of the magnetic flux into the magnetic cavity space MC is further suppressed, which is preferable.
　３－４．第４の変形例
　図１４は、磁性体装置１の第４の変形例を示す断面図である。本変形例において、磁気シールド３０は、導電性磁性材料で形成された金属磁気シールドである。そして、その金属磁気シールド３０が接地されている。例えば、基板１０上にグランドパッド６１が設けられ、金属磁気シールド３０は半田６２を介してそのグランドパッド６１に電気的に接続される。このように接地した金属磁気シールド３０は、電磁波シールドの役割も果たすことになり、好適である。 3-4. Fourth Modified Example FIG. 14 is a cross-sectional view showing a fourth modified example of the magnetic device 1. In this modification, the magnetic shield 30 is a metal magnetic shield formed of a conductive magnetic material. The metal magnetic shield 30 is grounded. For example, the ground pad 61 is provided on the substrate 10, and the metal magnetic shield 30 is electrically connected to the ground pad 61 via the solder 62. The grounded metal magnetic shield 30 also serves as an electromagnetic wave shield, which is preferable.
　３－５．第５の変形例
　図１５は、磁性体装置１の第５の変形例を示す断面図である。本変形例において、基板１０上には複数の磁性体素子２０が搭載され、磁気シールド３０はそれら複数の磁性体素子２０の全てをカバーするように共通に設けられる。例えば、配線基板１０上に２つのＭＲＡＭチップ２０－１、２０－２が搭載され、磁気シールド３０はそれらＭＲＡＭチップ２０－１、２０－２の両方をカバーするように共通に設けられる。 3-5. Fifth Modification FIG. 15 is a cross-sectional view showing a fifth modification of the magnetic device 1. In this modification, a plurality of magnetic elements 20 are mounted on the substrate 10, and the magnetic shield 30 is provided in common so as to cover all of the plurality of magnetic elements 20. For example, two MRAM chips 20-1 and 20-2 are mounted on the wiring board 10, and the magnetic shield 30 is provided in common so as to cover both of the MRAM chips 20-1 and 20-2.
　なお、図１５は２つのＭＲＡＭチップ２０－１、２０－２がＸ軸方向に並んだ態様であるが、複数のＭＲＡＭチップがＹ軸方向に並んだ態様、Ｘ軸方向及びＹ軸方向に２次元的に並んだ態様も、もちろん可能である。 FIG. 15 shows a mode in which two MRAM chips 20-1 and 20-2 are arranged in the X-axis direction, but a mode in which a plurality of MRAM chips are arranged in the Y-axis direction, 2 in the X-axis direction and the Y-axis direction. Of course, a dimensional arrangement is also possible.
　矛盾しない限りにおいて、上述の変形例同士の組み合わせも可能である。 As long as there is no contradiction, combinations of the above-described modifications are possible.
　４．パッケージ例
　以下、本発明が適用された磁気シールドパッケージの様々な例を説明する。 4). Package Examples Hereinafter, various examples of the magnetic shield package to which the present invention is applied will be described.
　図１６は、ＢＧＡ（Ball Grid Array）パッケージの例を示している。外部端子としての半田ボール（Solder Ball）７１を有する配線基板１０上に、磁性体素子２０が搭載されている。磁性体素子２０は、例えば、垂直磁化膜を利用したＭＲＡＭチップである。配線基板１０とＭＲＡＭチップ２０との間の接着層７２は、ＤＡＦ（Die Attach Film）あるいはＤＡＰ（Die Attach Paste）である。ＭＲＡＭチップ２０は、ボンディングワイヤ７３を介して、配線基板１０に電気的に接続されている。 FIG. 16 shows an example of a BGA (Ball Grid Array) package. A magnetic element 20 is mounted on a wiring board 10 having solder balls 71 as external terminals. The magnetic element 20 is, for example, an MRAM chip using a perpendicular magnetization film. The adhesive layer 72 between the wiring board 10 and the MRAM chip 20 is DAF (Die Attach Film) or DAP (Die Attach Paste). The MRAM chip 20 is electrically connected to the wiring board 10 via bonding wires 73.
　磁気シールド３０と配線基板１０との間の磁気空洞空間ＭＣは、物理的に空洞であってもよいし、非磁性絶縁体４０で充填されていてもよい。磁気シールド３０とボンディングワイヤ７３との間のショートが懸念される場合、磁気シールド３０の材料として、絶縁性磁性体（フェライト、等）が用いられてもよい。あるいは、導電性磁性体の磁気シールド３０の表面が、絶縁体でコーティングされてもよい。 The magnetic cavity space MC between the magnetic shield 30 and the wiring board 10 may be physically hollow or filled with a nonmagnetic insulator 40. When a short circuit between the magnetic shield 30 and the bonding wire 73 is a concern, an insulating magnetic material (ferrite, etc.) may be used as the material of the magnetic shield 30. Alternatively, the surface of the magnetic shield 30 made of a conductive magnetic material may be coated with an insulator.
　磁気シールド３０は、接着剤７４で配線基板１０に固定されてもよい。磁気空洞空間ＭＣが非磁性絶縁体４０で充填される場合、接着剤７４はなくてもよい。あるいは、磁気シールド３０が金属磁気シールドである場合、その金属磁気シールド３０は、導電部材（半田、導電性樹脂、導電性接着剤、等）を介して、配線基板１０のグランドパッドに電気的に接続されてもよい。磁気シールド３０の外周面は、磁性体粉が混合された外部モールド樹脂５０によって覆われていてもよい。 The magnetic shield 30 may be fixed to the wiring board 10 with an adhesive 74. When the magnetic cavity space MC is filled with the nonmagnetic insulator 40, the adhesive 74 may be omitted. Alternatively, when the magnetic shield 30 is a metal magnetic shield, the metal magnetic shield 30 is electrically connected to the ground pad of the wiring board 10 via a conductive member (solder, conductive resin, conductive adhesive, etc.). It may be connected. The outer peripheral surface of the magnetic shield 30 may be covered with an external mold resin 50 mixed with magnetic powder.
　図１７は、ＦＣＢＧＡ（Flip Chip Ball Grid Array）パッケージの例を示している。外部端子としての半田ボール８１を有する配線基板１０上に、磁性体素子２０が搭載されている。磁性体素子２０は、例えば、垂直磁化膜を利用したＭＲＡＭチップである。ＭＲＡＭチップ２０上には接続端子としての半田バンプ８２が形成されており、ＭＲＡＭチップ２０は、その半田バンプ８２を介して、配線基板１０に電気的に接続されている。 FIG. 17 shows an example of FCBGA (Flip Chip Chip Ball Grid Array) package. A magnetic element 20 is mounted on a wiring board 10 having solder balls 81 as external terminals. The magnetic element 20 is, for example, an MRAM chip using a perpendicular magnetization film. Solder bumps 82 as connection terminals are formed on the MRAM chip 20, and the MRAM chip 20 is electrically connected to the wiring substrate 10 via the solder bumps 82.
　磁気シールド３０と配線基板１０との間の磁気空洞空間ＭＣは、物理的に空洞であってもよいし、非磁性絶縁体４０で充填されていてもよい。磁気シールド３０は、接着剤８４で配線基板１０に固定されてもよい。磁気空洞空間ＭＣが非磁性絶縁体４０で充填される場合、接着剤８４はなくてもよい。あるいは、磁気シールド３０が金属磁気シールドである場合、その金属磁気シールド３０は、導電部材（半田、導電性樹脂、導電性接着剤、等）を介して、配線基板１０のグランドパッドに電気的に接続されてもよい。磁気シールド３０の外周面は、磁性体粉が混合された外部モールド樹脂５０によって覆われていてもよい。 The magnetic cavity space MC between the magnetic shield 30 and the wiring board 10 may be physically hollow or filled with a nonmagnetic insulator 40. The magnetic shield 30 may be fixed to the wiring board 10 with an adhesive 84. When the magnetic cavity space MC is filled with the nonmagnetic insulator 40, the adhesive 84 may not be required. Alternatively, when the magnetic shield 30 is a metal magnetic shield, the metal magnetic shield 30 is electrically connected to the ground pad of the wiring board 10 via a conductive member (solder, conductive resin, conductive adhesive, etc.). It may be connected. The outer peripheral surface of the magnetic shield 30 may be covered with an external mold resin 50 mixed with magnetic powder.
　図１８は、ＱＦＰ（Quad Flat Package）の例を示している。基板１０に相当するダイパッド９１上に、磁性体素子２０が搭載されている。磁性体素子２０は、例えば、垂直磁化膜を利用したＭＲＡＭチップである。ダイパッド９１とＭＲＡＭチップ２０との間の接着層９２は、ＤＡＦあるいはＤＡＰである。ＭＲＡＭチップ２０は、ボンディングワイヤ９３を介して、外部端子としてのリードフレーム（lead frame）９５に電気的に接続されている。 FIG. 18 shows an example of QFP (Quad Flat Package). A magnetic element 20 is mounted on a die pad 91 corresponding to the substrate 10. The magnetic element 20 is, for example, an MRAM chip using a perpendicular magnetization film. The adhesive layer 92 between the die pad 91 and the MRAM chip 20 is DAF or DAP. The MRAM chip 20 is electrically connected to a lead frame 95 as an external terminal via a bonding wire 93.
　磁気シールド３０は、リードフレーム９５上に載置される。従って、磁気シールド３０は絶縁性磁性体で形成される、あるいは、導電性の磁気シールド３０が絶縁体でコーティングされることが望ましい。磁気シールド３０は、絶縁性の接着剤９４でリードフレーム９５に固定されてもよい。磁気シールド３０の内側の磁気空洞空間ＭＣは、物理的に空洞であってもよいし、非磁性絶縁体４０で充填されていてもよい。磁気シールド３０の外周面は、磁性体粉が混合された外部モールド樹脂５０によって覆われていてもよい。 The magnetic shield 30 is placed on the lead frame 95. Therefore, it is desirable that the magnetic shield 30 is formed of an insulating magnetic material, or the conductive magnetic shield 30 is coated with an insulating material. The magnetic shield 30 may be fixed to the lead frame 95 with an insulating adhesive 94. The magnetic cavity space MC inside the magnetic shield 30 may be physically hollow or may be filled with a nonmagnetic insulator 40. The outer peripheral surface of the magnetic shield 30 may be covered with an external mold resin 50 mixed with magnetic powder.
　図１８に示されるように、ダイパッド９１（基板１０）の両側に、第１磁気シールド３０Ａと第２磁気シールド３０Ｂがそれぞれ配置されると好適である。当然、第２磁気シールド３０Ｂが除かれても、本発明の効果は得られる。 As shown in FIG. 18, it is preferable that the first magnetic shield 30A and the second magnetic shield 30B are respectively disposed on both sides of the die pad 91 (substrate 10). Of course, even if the second magnetic shield 30B is removed, the effects of the present invention can be obtained.
　図１９は、マルチチップモジュールパッケージの例を示している。例えば、基板１０上に、複数のＭＲＡＭチップ２０Ａが搭載される。また、１パッケージ内に、ＭＲＡＭチップ２０Ａと他の半導体チップ２０Ｂが混載されていてもよい。いずれの場合であっても、磁気シールド３０は全てのチップをカバーするように設けられる。 FIG. 19 shows an example of a multichip module package. For example, a plurality of MRAM chips 20 </ b> A are mounted on the substrate 10. Further, the MRAM chip 20A and another semiconductor chip 20B may be mixedly mounted in one package. In either case, the magnetic shield 30 is provided so as to cover all the chips.
　以上、本発明の実施の形態が添付の図面を参照することにより説明された。但し、本発明は、上述の実施の形態に限定されず、要旨を逸脱しない範囲で当業者により適宜変更され得る。 The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the above-described embodiment, and can be appropriately changed by those skilled in the art without departing from the gist.
　本出願は、２００９年１０月１３日に出願された日本国特許出願２００９－２３６３２６を基礎とする優先権を主張し、その開示の全てをここに取り込む。 This application claims priority based on Japanese Patent Application No. 2009-236326 filed on Oct. 13, 2009, the entire disclosure of which is incorporated herein.

Claims (7)

  1. 　基板と、
    　前記基板の第１主面上に搭載された少なくとも１つの磁性体素子と、
    　前記基板の前記第１主面側に配置された軟磁性体の磁気シールドと
    　を備え、
    　前記磁気シールドは、前記基板から見て凸になるように湾曲する湾曲領域を含み、
    　前記湾曲領域は、少なくとも、前記基板上面から見て前記磁気シールドと前記磁性体素子とがオーバーラップする領域を含み、
    　前記磁気シールドと前記磁性体素子との間の空間は、磁気的に空洞である
    　磁性体装置。     A substrate,
    At least one magnetic element mounted on the first main surface of the substrate;
    A magnetic shield of soft magnetic material disposed on the first main surface side of the substrate,
    The magnetic shield includes a curved region that curves so as to be convex when viewed from the substrate,
    The curved region includes at least a region where the magnetic shield and the magnetic element overlap when viewed from the upper surface of the substrate,
    A space between the magnetic shield and the magnetic element is a magnetic cavity.
  2. 　請求項１に記載の磁性体装置であって、
    　前記磁気シールドと前記磁性体素子との間には非磁性絶縁体が充填されている、または、前記磁気シールドと前記磁性体素子の間の空間は空洞である
    　磁性体装置。     The magnetic device according to claim 1,
    A nonmagnetic insulator is filled between the magnetic shield and the magnetic element, or a space between the magnetic shield and the magnetic element is a cavity.
  3. 　請求項１又は２に記載の磁性体装置であって、
    　前記磁気シールドの前記空間と逆側の面は、磁性体粉が混合された外部モールド樹脂によって覆われている
    　磁性体装置。     The magnetic device according to claim 1 or 2,
    The surface of the magnetic shield opposite to the space is covered with an external mold resin mixed with magnetic powder.
  4. 　請求項１乃至３のいずれか一項に記載の磁性体装置であって、
    　前記磁気シールドは、導電性磁性材料で形成され、且つ、接地されている
    　磁性体装置。     A magnetic device according to any one of claims 1 to 3,
    The magnetic shield is formed of a conductive magnetic material and is grounded.
  5. 　請求項１乃至４のいずれか一項に記載の磁性体装置であって、
    　前記磁性体素子の数は複数であり、
    　前記湾曲領域は、前記複数の磁性体素子の全てをカバーする
    　磁性体装置。     The magnetic device according to any one of claims 1 to 4, wherein
    The number of the magnetic elements is plural,
    The curved region covers all of the plurality of magnetic elements.
  6. 　請求項１乃至５のいずれか一項に記載の磁性体装置であって、
    　前記湾曲領域は、前記磁気シールドの全域にわたる
    　磁性体装置。     It is a magnetic body device according to any one of claims 1 to 5,
    The curved region extends over the entire area of the magnetic shield.
  7. 　請求項１乃至６のいずれか一項に記載の磁性体装置であって、
    　更に、軟磁性体の他の磁気シールドを備え、
    　前記他の磁気シールドは、前記基板の前記第１主面と逆側の第２主面側に配置され、
    　前記他の磁気シールドは、前記基板から見て凸になるように湾曲する他の湾曲領域を備え、
    　前記他の磁気シールドと前記基板との間の空間は、磁気的に空洞である
    　磁性体装置。     A magnetic device according to any one of claims 1 to 6,
    In addition, it has another magnetic shield of soft magnetic material,
    The other magnetic shield is disposed on the second main surface side opposite to the first main surface of the substrate,
    The other magnetic shield includes another curved region that curves so as to be convex when viewed from the substrate,
    A space between the other magnetic shield and the substrate is magnetically hollow.
PCT/JP2010/067788 2009-10-13 2010-10-08 Magnet device WO2011046091A1 (en)

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