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WO2010058264A1 - Semi-conducteur au sic de type p - Google Patents

Semi-conducteur au sic de type p Download PDF

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Publication number
WO2010058264A1
WO2010058264A1 PCT/IB2009/007497 IB2009007497W WO2010058264A1 WO 2010058264 A1 WO2010058264 A1 WO 2010058264A1 IB 2009007497 W IB2009007497 W IB 2009007497W WO 2010058264 A1 WO2010058264 A1 WO 2010058264A1
Authority
WO
WIPO (PCT)
Prior art keywords
concentration
atom number
type sic
sic semiconductor
satisfy
Prior art date
Application number
PCT/IB2009/007497
Other languages
English (en)
Inventor
Hiroaki Saitoh
Akinori Seki
Tsunenobu Kimoto
Original Assignee
Toyota Jidosha Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Jidosha Kabushiki Kaisha filed Critical Toyota Jidosha Kabushiki Kaisha
Priority to DE112009003685.6T priority Critical patent/DE112009003685B4/de
Priority to CN2009801467545A priority patent/CN102224592B/zh
Priority to US13/127,814 priority patent/US8399888B2/en
Publication of WO2010058264A1 publication Critical patent/WO2010058264A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Definitions

  • the invention relates to a SiC semiconductor, and in particular to a p-type SiC semiconductor of low resistance.
  • JP-A-2005-507360 describes the method of obtaining a semi-insulating SiC single crystal of high resistance by employing the combination of deep-energy-level intrinsic defects of high concentration and deep-energy-level acceptors (Ti and B).
  • Ti and B deep-energy-level acceptors
  • a method of manufacturing a p-type SiC single crystal by Al-doping, modified LeIy method (sublimation method) is described in T. L. Staubinger, et al. Mat. Sci. Forum 389-393 (2002) p.131.
  • the crystal growth with high-concentration Al doping can adversely affect the crystallinity.
  • JP-A-2008-100890 describes a manufacturing method that is characterized in that the liquid alloy used when a SiC single crystal is grown by liquid-phase growth method, is a Si-Al-M alloy (M is Ti, for example).
  • M is Ti, for example.
  • Al and Ti are used to obtain a high-quality SiC single crystal and neither a method of controlling the amounts of these elements that are mixed into the crystal made nor the properties of the crystal are described in this document.
  • Al and B are representative acceptors for p-type SiC.
  • the ionization energy of Al and B is higher than that of N, which is a donor for n-type SiC.
  • N which is a donor for n-type SiC.
  • JP-A-2007-13154 Published Japanese Translation of PCT application No. 2008-505833 (JP-A-2008-505833), WO2004/090969, Japanese Patent Application Publication No. 10-70273 (JP-A-10-70273), and Japanese Patent Application Publication No. 2006-237319 (JP-A-2006 : 237319) describe that Al and Ti atoms are introduced into a SiC single crystal.
  • JP-A-2006 : 237319 describe that Al and Ti atoms are introduced into a SiC single crystal.
  • the invention provides a p-type SiC semiconductor of low resistance.
  • An aspect of the invention is a p-type SiC semiconductor including a SiC crystal that contains, as impurities, Al and Ti, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al.
  • the atom number concentration of Al and the atom number concentration of Ti may satisfy the following relations: (Concentration of Al) ⁇ 5 x 10 18 /cm 3 ; and 0.01% ⁇ (Concentration of Ti)/(Concentration of Al) ⁇ 20%.
  • the atom number concentration of Al and the atom number concentration of Ti may satisfy the following relations: 5 x 10 /cm ⁇ (Concentration of Al) ⁇ 1 x 10 20 /cm 3 ; and 0.01% ⁇ (Concentration of Ti)/(Concentration of Al) ⁇ 20%.
  • the atom number concentration of Al and the atom number concentration of Ti may satisfy the following relations: (Concentration of Al) ⁇ 5 x 10 18 /cm 3 ; and 1 x 10 17 /cm 3 ⁇ (Concentration of Ti) ⁇ 1 x 10 18 /cm 3 .
  • the atom number concentration of Al and the atom number concentration of Ti may satisfy the following relations: 5 x 10 /cm ⁇ (Concentration of Al) ⁇ 1 x 10 20 /cm 3 ; and 1 x 10 17 /cm 3 ⁇ (Concentration of Ti) ⁇ 1 x 10 18 /cm 3 .
  • a SiC single crystal is caused to contain, as acceptors, Ti as well as Al and the atom number concentration of Ti is equal to or less than the atom number concentration of Al, so that it is possible to reduce the specific resistance as compared to the case where Al alone is added.
  • FIG. 1 is a graph showing the variation of specific resistance with the change in the concentration of Ti for each of the concentrations of Al in a SiC single crystal to which Al and Ti atoms are added according to the invention.
  • the atom number concentration of Al and the atom number concentration of Ti satisfy the following relations: (Concentration of Al) ⁇ 5 x 10 18 /cm 3 ; and 0.01% ⁇ (Concentration of Ti)/(Concentration of Al) ⁇ 20%.
  • the atom number concentration of Al and the atom number concentration of Ti satisfy the following relations: (Concentration of Al) ⁇ 5 x 10 18 /cm 3 ; and 1 x 10 17 /cm 3 ⁇ (Concentration of Ti) ⁇ 1 x 10 18 /cm 3 .
  • a sample is made that is obtained by introducing Al and Ti atoms into a SiC single crystal by ion co-implantation.
  • a sample is also made that is obtained by introducing only Al into a SiC single crystal.
  • Implantation Angle 0 • • ⁇ oo°
  • Implantation Substrate Temperature 500 0 C ⁇ High-Temperature Annealing after Implantation>
  • the atom number concentration of Al and the atom number concentration of Ti are measured by secondary ion mass spectrometry (SIMS) for each of the samples into which ions have been implanted. Then, by conducting a Hall-effect measurement by the van der Pauw method, the specific resistance of each sample is determined. The result is collectively shown in Table 1. In Table 1, the specific resistance improvement rates that are obtained using the following equation are also shown.
  • Improvement Rate (%) ⁇ 1 - (p2/pl) ⁇ x 100 pi: Specific resistance ( ⁇ cm) of the sample when Al alone is introduced p2: Specific resistance ( ⁇ -cm) of the sample when Al and Ti are introduced
  • Table 3 shows the ratio (%) of the concentration of Ti to the concentration of Al and Table 4 shows the relations between the respective ratios and the sample numbers.
  • FIG. 1 shows the variation of specific resistance with the change in the concentration of Ti when the concentration of Al is 1 x 10 20 /cm 3 and 5 x 10 20 /cm 3 . It is clearly seen that when the concentration of Al is 1 x 10 20 /cm 3 , the specific resistance monotonously decreases as the concentration of Ti increases. When the concentration of Al is 5 x 10 20 /cm 3 , because the concentration of Al is high and the absolute value of the specific resistance is therefore relatively low even when no Ti is added, the decrease in the specific resistance with the increase in the concentration of Ti is small. However, it is perceived that there is a tendency of gradual decrease as a whole.
  • a p-type SiC semiconductor is provided that is reduced in resistance as compared to the case where Al alone is added.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention porte sur un semi-conducteur au SiC de type P qui comprend un cristal Sic contenant Al et Ti en tant qu'impuretés, la concentration en nombre d'atomes de Ti étant inférieure ou égale à la concentration en nombre d'atomes d'Al. Il est préférable que la concentration d'Al et la concentration de Ti satisfassent les relations suivantes : (concentration d'Al) > 5 x 1018/cm3 et 0,01 % = (concentration de Ti)/(concentration d'Al) = 20 %. Il est plus préférable que la concentration d'Al et la concentration de Ti satisfassent les relations suivantes : (concentration d'Al) = 5 x 1018/cm3 et 1 x 1017/cm3 = (concentration de Ti) = 1 x 1018/cm3.
PCT/IB2009/007497 2008-11-20 2009-11-19 Semi-conducteur au sic de type p WO2010058264A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112009003685.6T DE112009003685B4 (de) 2008-11-20 2009-11-19 p-SiC-Halbleiter
CN2009801467545A CN102224592B (zh) 2008-11-20 2009-11-19 p型SiC半导体
US13/127,814 US8399888B2 (en) 2008-11-20 2009-11-19 P-type SiC semiconductor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008296814A JP5521317B2 (ja) 2008-11-20 2008-11-20 ｐ型ＳｉＣ半導体
JP2008-296814 2008-11-20

Publications (1)

Publication Number Publication Date
WO2010058264A1 true WO2010058264A1 (fr) 2010-05-27

Family

ID=41593032

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2009/007497 WO2010058264A1 (fr) 2008-11-20 2009-11-19 Semi-conducteur au sic de type p

Country Status (5)

Country Link
US (1) US8399888B2 (fr)
JP (1) JP5521317B2 (fr)
CN (1) CN102224592B (fr)
DE (1) DE112009003685B4 (fr)
WO (1) WO2010058264A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014189010A1 (fr) * 2013-05-20 2014-11-27 日立化成株式会社 Monocristaux de carbure de silicium, et procédé de fabrication de ceux-ci
JP6380267B2 (ja) * 2015-07-09 2018-08-29 トヨタ自動車株式会社 ＳｉＣ単結晶及びその製造方法
CN113279065B (zh) * 2021-04-01 2022-01-11 浙江大学杭州国际科创中心 一种IVB族原子和铝共掺制备p型4H-SiC的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5063421A (en) * 1988-08-08 1991-11-05 Sharp Kabushiki Kaisha Silicon carbide light emitting diode having a pn junction
JPH04206578A (ja) * 1990-11-30 1992-07-28 Toshiba Corp 炭化珪素半導体素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281831A (en) 1990-10-31 1994-01-25 Kabushiki Kaisha Toshiba Optical semiconductor device
EP0831520B1 (fr) 1996-07-19 2004-09-29 Infineon Technologies AG Méthode de fabrication d'une structure MIS en carbure de silicium (SiC)
JP2000277448A (ja) * 1999-03-26 2000-10-06 Ion Kogaku Kenkyusho:Kk 結晶材料の製造方法および半導体素子
US6599644B1 (en) * 2000-10-06 2003-07-29 Foundation For Research & Technology-Hellas Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
SE520968C2 (sv) 2001-10-29 2003-09-16 Okmetic Oyj Högresistiv monokristallin kiselkarbid och metod för dess framställning
GB0215150D0 (en) * 2002-07-01 2002-08-07 Univ Hull Photoelectric cell
JPWO2004090969A1 (ja) * 2003-03-24 2006-07-06 独立行政法人産業技術総合研究所 炭化珪素半導体装置およびその製造方法
JP4987707B2 (ja) * 2004-07-07 2012-07-25 トゥー‐シックス・インコーポレイテッド 低ドーピング半絶縁性ＳｉＣ結晶と方法
JP4763314B2 (ja) 2005-02-25 2011-08-31 新日本無線株式会社 ｐ型シリコンカーバイド層の製造方法
US7391058B2 (en) 2005-06-27 2008-06-24 General Electric Company Semiconductor devices and methods of making same
JP4419937B2 (ja) 2005-09-16 2010-02-24 住友金属工業株式会社 炭化珪素単結晶の製造方法
JP2008100890A (ja) 2006-10-20 2008-05-01 Sumitomo Metal Ind Ltd ＳｉＣ単結晶の製造方法
JP4697235B2 (ja) * 2008-01-29 2011-06-08 トヨタ自動車株式会社 ｐ型ＳｉＣ半導体単結晶の製造方法およびそれにより製造されたｐ型ＳｉＣ半導体単結晶

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5063421A (en) * 1988-08-08 1991-11-05 Sharp Kabushiki Kaisha Silicon carbide light emitting diode having a pn junction
JPH04206578A (ja) * 1990-11-30 1992-07-28 Toshiba Corp 炭化珪素半導体素子

Also Published As

Publication number Publication date
CN102224592B (zh) 2013-05-22
JP2010123794A (ja) 2010-06-03
DE112009003685B4 (de) 2020-03-19
DE112009003685T5 (de) 2012-10-18
US8399888B2 (en) 2013-03-19
US20110210341A1 (en) 2011-09-01
JP5521317B2 (ja) 2014-06-11
CN102224592A (zh) 2011-10-19

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