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Mynbaeva et al., 2003 - Google Patents

Porous SiC: New applications through in-and out-dopant diffusion

Mynbaeva et al., 2003

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Document ID
7739036832862670303
Author
Mynbaeva M
Kuznetsov N
Lavrent'ev A
Mynbaev K
Wolan J
Grayson B
Ivantsov V
Syrkin A
Fomin A
Saddow S
Publication year
Publication venue
Materials Science Forum

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Snippet

New applications for porous SiC are shown. They include using porous SiC substrate with introduced Mg for autodoping of GaN films grown on 6H-SiC, and fabricating semiinsulating 4H-SiC films through doping porous SiC with Si or V. In the latter cases, specific resistivity of …
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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