WO2009110530A1

WO2009110530A1 - Semiconductor device

Info

Publication number: WO2009110530A1
Application number: PCT/JP2009/054127
Authority: WO
Inventors: 俊輔深見; 延行石綿; 哲広鈴木; 則和大嶋; 聖万永原
Original assignee: 日本電気株式会社
Priority date: 2008-03-07
Filing date: 2009-03-05
Publication date: 2009-09-11
Also published as: JP5435298B2; JPWO2009110530A1

Abstract

Disclosed is a semiconductor device equipped with a first magnetic random access memory that has a first memory cell (9), and a second magnetic random access memory that has a second memory cell (8) which operates at a higher speed than the first memory cell (9) and that is provided within the same chip as the aforementioned first magnetic random access memory. First memory cell (9) is a spin injection magnetization inversion type MRAM. Data is stored based on the position of the magnetic wall of a magnetization-free layer. The layer in which write current flows and the layer in which readout current flows are not the same. Second memory cell (8) is a current-induced magnetic field type MRAM. Data is stored based on a magnetic field induced by the write current.

Description

Semiconductor device

The present invention relates to a semiconductor device, and more particularly to a semiconductor device using a magnetoresistive effect element for a memory cell.

Magnetic Random Access Memory (Magnetic Random Access Memory; MRAM) is expected to be a non-volatile memory capable of high-speed operation and infinite rewriting, and has been actively developed. In the MRAM, a magnetoresistive effect element is integrated in a memory cell, and data is stored as the magnetization direction of the ferromagnetic layer of the magnetoresistive effect element. Several types of MRAMs have been proposed corresponding to the method of switching the magnetization of the ferromagnetic layer.

The most common MRAM is a current-induced magnetic field writing type MRAM. In this MRAM, wiring for passing a write current is arranged around the magnetoresistive effect element, and the magnetization direction of the ferromagnetic layer of the magnetoresistive effect element is switched by a current magnetic field generated by passing the write current. In principle, this MRAM can be written in 1 nanosecond or less, and is suitable as a high-speed MRAM. For example, there has been a report of successful operation verification at 250 MHz (N. Sakimura et al., “A 250-MHz 1-Mbit Embedded MRAM Macro Usage 2T1MTJ Cell Bitline Separation and Half-ShipCritichi” Conference, 2007. ASSCC '07. IEEE Asian. P. 216.). Furthermore, a circuit configuration suitable for operation at 500 MHz has also been proposed (N. Sakimura et al., “MRAM Cell Technology for Over 500-MHz SoC”, IEEE JOURNAL OF SOLID-STATE CIRCUITS, Vol. 42. p.830.).

However, the magnetic field for switching the magnetization of the magnetic material in which the thermal stability and the disturbance magnetic field resistance are ensured is generally about several tens [Oe]. In order to generate such a magnetic field, a large write current of about several mA is required. Even the lowest reported write current is about 1 mA (H. Honjo et al., “Performance of write-line-inserted MTJ for low-write-current MRAM cell”, 52nd MagnetismensMet 2007 (MMM 2007), p. 481.). When the write current is large, the chip area is inevitably increased, and the power consumption required for writing increases. In addition to this, when the memory cell is miniaturized, the write current further increases and does not scale.

As another MRAM, there is a spin polarized current writing type MRAM. In this MRAM, a spin-polarized current is injected into the ferromagnetic conductor of the magnetoresistive element, and the magnetization is caused by a direct interaction between the spin of the conduction electron carrying the current and the magnetic moment of the conductor. (Hereinafter referred to as “Spin Transfer Magnetization Switching”). The presence or absence of spin injection magnetization reversal depends on the current density (not the absolute value of the current). Accordingly, when spin injection magnetization reversal is used for data writing, the write current is reduced if the size of the memory cell is reduced. That is, the spin injection magnetization reversal method is excellent in scaling. When the write current is small, the chip area is small, and high integration and large scale are possible. However, the writing time tends to be longer than that of the current-induced magnetic field writing type MRAM (example: 1 nsec. Or more).

In a semiconductor device (hereinafter also referred to as a “memory-embedded semiconductor device”) such as a system LSI (Large-Scale Integration) equipped with logic and memory, an area that requires high-speed operation, large capacity and high integration ( That is, there are areas that require a low write current, and a memory is provided in each area. For example, a register or cache is provided as a memory in an area requiring high-speed operation, and a main storage device or an auxiliary storage device is provided as a memory in an area requiring large capacity and high integration. Since the performance and functions required for each memory are different from each other, one type of memory cannot be used. Therefore, at least one of a plurality of types of memory (FF (Flip-Flop), SRAM (Static Random Access Memory), DRAM (Dynamic Random Access Memory), flash memory, etc.) has been operated at high speed so far. At least one of the other required areas was used for a large capacity / highly integrated area. However, in this case, the number of processes increases because the materials and processes used in each memory are different from each other. As a result, problems such as an increase in manufacturing cost, a prolonged manufacturing period, and a decrease in manufacturing yield may occur.

Therefore, an object of the present invention is to provide a memory-embedded semiconductor device capable of achieving both high-speed processing and large-capacity processing in an internal memory.

The semiconductor device of the present invention has a first magnetic random access memory having a first memory cell and a second memory cell that operates at a higher speed than the first memory cell, and is the same as the first magnetic random access memory. And a second magnetic random access memory provided in the chip. The first memory cell includes a first magnetization fixed layer whose magnetization direction is fixed, a first magnetization free layer whose magnetization direction can be reversed, a first magnetization fixed layer, and a first magnetization free layer sandwiched between the first magnetization fixed layer and the first magnetization free layer. A nonmagnetic layer; a second magnetization fixed layer whose magnetization direction is fixed; a second magnetization free layer whose magnetization direction is reversible; a second non-magnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer A magnetic layer. The first magnetization fixed layer and the first magnetization free layer are made of a ferromagnetic material and have perpendicular magnetic anisotropy. The second magnetization fixed layer and the second magnetization free layer are made of a ferromagnetic material and have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. In the first plane parallel to each layer, the center of gravity of the second magnetization free layer is shifted from the center of gravity of the first magnetization free layer. The magnetization direction of the second magnetization fixed layer is substantially parallel or substantially antiparallel to the direction of deviation of the center of gravity between the first magnetization free layer and the second magnetization free layer. The second memory cell includes a third magnetization free layer, a third magnetization fixed layer, and a second nonmagnetic layer provided between the third magnetization free layer and the third magnetization fixed layer. The third magnetization free layer and the third magnetization fixed layer are made of a ferromagnetic material.

FIG. 1 is a schematic diagram showing a configuration of a semiconductor device according to an embodiment of the present invention. FIG. 2 is a perspective view showing the configuration of the magnetoresistive element in each MRAM of this embodiment. FIG. 3A is a perspective view showing the structure of the main part of the magnetoresistive effect element of this embodiment. FIG. 3B is a plan view showing the structure of the main part of the magnetoresistive element of this example. FIG. 3C is a cross-sectional view showing the structure of the main part of the magnetoresistive element of this example. FIG. 4A is a cross-sectional view for explaining the state of magnetic flux in the magnetoresistive effect element of this embodiment. FIG. 4B is a plan view for explaining the state of magnetic flux in the magnetoresistive effect element of this embodiment. FIG. 5A is a cross-sectional view for explaining two states that can be taken by the magnetoresistive element of this embodiment. FIG. 5B is a cross-sectional view for explaining two states that can be taken by the magnetoresistive element of this embodiment. FIG. 6A is a conceptual diagram for explaining a method of writing data to the magnetoresistive effect element 9. FIG. 6B is a conceptual diagram for explaining a method of writing data to the magnetoresistive effect element 9. FIG. 7A is a circuit diagram showing a configuration example of a memory cell in which the magnetoresistive effect element of this embodiment is integrated. FIG. 7B is a circuit diagram showing a configuration example of an MRAM in which the magnetoresistive effect element of this embodiment is integrated. FIG. 8 is a circuit diagram showing another configuration example of the memory cell in which the magnetoresistive effect element of this embodiment is integrated. FIG. 9 is a perspective view showing a configuration of a first modification of the magnetoresistive effect element in each MRAM according to the embodiment of the present invention. FIG. 10 is a plan view showing the structure of the main part of the magnetoresistive effect element of this embodiment. FIG. 11A is a conceptual diagram for explaining a method of reading data from a magnetoresistive element. FIG. 11B is a conceptual diagram for explaining a method of reading data from the magnetoresistive effect element. FIG. 12A is a conceptual diagram for explaining a method of writing data to the magnetoresistive effect element. FIG. 12B is a conceptual diagram for explaining a method of writing data to the magnetoresistive effect element. FIG. 13 is a perspective view showing a configuration of a second modification of the magnetoresistive element in each MRAM according to the present embodiment. FIG. 14A is a perspective view showing the structure of the main part of the magnetoresistive element of this example. FIG. 14B is a plan view showing the structure of the main part of the magnetoresistive element of this example. FIG. 14C is a cross-sectional view showing the structure of the main part of the magnetoresistive element of this example. FIG. 15A is a perspective view showing the structure of the main part of the magnetoresistive element of this example. FIG. 15B is a plan view showing the structure of the main part of the magnetoresistive element of this example. FIG. 15C is a cross-sectional view showing the structure of the main part of the magnetoresistive element of this example. FIG. 16A is a cross-sectional view for explaining two states that can be taken by the magnetoresistive element of this embodiment. FIG. 16B is a cross-sectional view for explaining two states that can be taken by the magnetoresistive element of this embodiment. FIG. 17A is a conceptual diagram for explaining a method of writing data to the magnetoresistive effect element 9. FIG. 17B is a conceptual diagram for explaining a method of reading data to the magnetoresistive effect element 9. FIG. 18A is a perspective view showing the structure of the main part of the magnetoresistive element of this example. FIG. 18B is a plan view showing the structure of the main part of the magnetoresistive element of this example. FIG. 18C is a cross-sectional view showing the structure of the main part of the magnetoresistive element of this example. FIG. 18D is a cross-sectional view showing the structure of the main part of the magnetoresistive element of this example. FIG. 19A is a perspective view showing the structure of the main part of the magnetoresistive element of this example. FIG. 19B is a plan view showing the structure of the main part of the magnetoresistive element of this example. FIG. 19C is a cross-sectional view showing the structure of the main part of the magnetoresistive element of this example. FIG. 20A is a conceptual diagram for explaining a method of writing data to the magnetoresistive effect element 9. FIG. 20B is a conceptual diagram for explaining a method of reading data to the magnetoresistive effect element 9.

Hereinafter, embodiments of the semiconductor device of the present invention will be described. FIG. 1 is a schematic diagram showing a configuration of a semiconductor device according to an embodiment of the present invention. The semiconductor device 1 of the present embodiment is a memory-embedded semiconductor device. The semiconductor device 1 is exemplified by a memory-embedded LSI formed on one chip, and includes a logic unit 2 and a memory unit 3.

The logic unit 2 is an area that requires high-speed operation, and has a logic circuit that performs a logical operation. The logic unit 2 further includes MRAMs 4-1 to 4-4 capable of high speed operation. The MRAMs 4-1 to 4-4 are exemplified as current-induced magnetic field writing type MRAMs, and are used as registers, L1 caches (primary caches), and L2 caches (secondary caches). Hereinafter, when it is not necessary to distinguish between them, they are simply abbreviated as MRAM4.

The current-induced magnetic field writing type MRAM is theoretically 1 nsec. The following writing is possible, and it is suitable as an MRAM capable of high-speed operation. In general, since the write current is large, the area of the MRAM is relatively large. However, since the memory is used as a memory having a relatively small capacity such as a register, an L1 cache, or an L2 cache, the area of the entire chip is large. The impact on is very small.

The memory unit 3 is an area that requires large capacity and high integration (that is, low write current), and has a memory circuit for storing data. As the storage circuit, large-capacity and highly integrated MRAMs 5-1 to 5-3 are included. The MRAMs 5-1 to 5-3 are exemplified as spin-polarized current writing type MRAMs, and are used as a main storage device or an auxiliary storage device. Hereinafter, when it is not necessary to distinguish between them, they are simply abbreviated as MRAM5.

The spin-polarized current writing type MRAM is exemplified by a spin injection magnetization switching type MRAM.
In the spin injection magnetization reversal type MRAM, the magnetoresistive effect element includes a first ferromagnetic layer having a reversible magnetization (often referred to as a magnetization free layer) and a second ferromagnetic layer having a fixed magnetization ( (Often referred to as a magnetization fixed layer) and a tunnel body provided with a tunnel barrier layer provided between these ferromagnetic layers. Such MRAM data writing utilizes the interaction between spin-polarized conduction electrons and localized electrons in the magnetization free layer when a current is passed between the magnetization free layer and the magnetization fixed layer. The magnetization of the magnetization free layer is reversed. In this case, the magnetoresistive effect element is a two-terminal element having a terminal connected to the magnetization free layer and a terminal connected to the magnetization fixed layer. Therefore, this MRAM is effective for reducing the area.

Regarding the reduction of the write current, for example, there is a report demonstrating the write at 0.2 mA in the spin injection magnetization reversal type MRAM (T. Kawahara et al., “2 Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by -Bit Bidirectional Current Write and Parallelizing-Direction Current Read ", Solid-State Circuits Confence, 2007. ISSCC 2007. DigestEnt. However, it has been reported that the write current increases rapidly in the nanosecond region in principle (T. Aoki et al., “Spin transfer switching in nano second switching speed region for MgO based ferromechanical 31”. Conference on MAGNETICS in Japan (2007), The Magnetics Society of Japan.p.340.). In addition, there is a report that a type having perpendicular magnetic anisotropy is more advantageous than a type having in-plane magnetic anisotropy for reducing current (M. Nakayama et al., “TbCoFe / CoFeB”). / MgO / CoFeB / TbCoFe magnetotunative tunneling junctions with perpendental magnetic anisotropy ", 52nd Magnetism and MagneticMen.M200.

As described above, the spin-injection magnetization reversal type MRAM has an excellent scaling property and is suitable as an MRAM capable of high integration and large scale. In addition, although the operation speed is relatively low, the influence is extremely small because it is used as a memory that does not require high-speed operation as compared with a register such as a main storage device or an auxiliary storage device.

In the semiconductor device 1, when all of the storage elements of the logic unit 2 and the memory unit 3 are nonvolatile memory MRAMs, it is preferable that data can be retained in the MRAMs even when the power is turned off. In that case, power off can be set to the basic state (instant on). Thereby, power consumption can be reduced.

Furthermore, in the semiconductor device 1, when the memory elements of the logic unit 2 and the memory unit 3 are nonvolatile memory MRAMs, the memory elements can be manufactured in the same process as described later, which is preferable. Thus, by manufacturing different types of MRAMs in the same process, the semiconductor device 1 can be manufactured at a low cost and in a short time.

Note that the semiconductor device of the present invention is not limited to the configuration illustrated in FIG. That is, the number, shape, arrangement, etc. of the MRAM in each part, such as the shape and arrangement of the logic part 2 and the memory part 3, can be freely modified within the scope of the technical idea of the present invention.

Next, the configuration of the magnetoresistive effect element in each MRAM according to the embodiment of the present invention will be described. FIG. 2 is a perspective view showing the configuration of the magnetoresistive effect element in each MRAM according to the embodiment of the present invention. The magnetoresistive effect element 8 and the magnetoresistive effect element 9 according to the embodiment of the present invention are formed on the same chip. However, the white arrow in each component in the figure indicates the direction of magnetization (the same applies hereinafter).

The magnetoresistive effect element 8 is used in a memory cell of the MRAM 4 (operating frequency is preferably 200 MHz or more) for high speed operation. This is a current-induced magnetic field writing type magnetoresistive effect element. The magnetoresistive effect element 8 includes a magnetization free layer 140, a magnetization fixed layer 160, and a nonmagnetic layer 150 provided between the magnetization free layer 140 and the magnetization fixed layer 160. Although not shown, in addition to the above-described layers, it is desirable that an electrode layer, a diffusion prevention layer, a base layer, and the like are appropriately provided.

The magnetization free layer 140 and the magnetization fixed layer 160 are made of a ferromagnetic material. The magnetization free layer 140 and the magnetization fixed layer 160 are in-plane magnetization films having in-plane magnetic anisotropy. That is, the magnetization free layer 140 and the magnetization fixed layer 160 have magnetic anisotropy in the in-plane direction (xy in-plane direction). In this embodiment, the nonmagnetic layer 150 is made of an insulator, and a magnetic tunnel junction (MTJ) is formed by the magnetization free layer 140, the nonmagnetic layer 150, and the magnetization fixed layer 160. The nonmagnetic layer 150 is preferably made of an insulator, but may be made of a semiconductor or a conductor. Specific materials of the magnetization free layer 140, the nonmagnetic layer 150, and the magnetization fixed layer 160 will be described later.

The magnetization fixed layer 160 has a fixed magnetization. The fixed magnetization is set in a direction perpendicular to the longitudinal direction (y direction) of the magnetization fixed layer 160 or has a vertical component. On the other hand, the magnetization free layer 140 has reversible magnetization. Further, the easy axis of magnetization of the magnetization free layer 140 is set to be perpendicular to the longitudinal direction (y direction) of the magnetization fixed layer 160 or to have a perpendicular component. Such magnetic anisotropy can be imparted by shape magnetic anisotropy.

When the fixed magnetization of the magnetization fixed layer 160 and the magnetization easy axis of the magnetization free layer 140 are as described above, the magnetization of the magnetization free layer 140 is either a parallel component or an antiparallel component with respect to the magnetization of the magnetization fixed layer 160. You can have either. In the magnetoresistive effect element 8 of the present embodiment, the magnetization direction of the magnetization free layer 140 corresponds to stored data.

Next, a method for writing data in the magnetoresistive effect element 8 of this embodiment will be described. First, a write current is passed through the magnetization fixed layer 160. The magnetization of the magnetization free layer 140 is reversed by a current-induced magnetic field generated by the write current. At that time, the direction of the current-induced magnetic field generated by the direction of the write current can be controlled to change the magnetization of the magnetization free layer 140 to a desired direction. Thereby, desired data is recorded in the magnetization free layer 140. The magnetization fixed layer 160 may be referred to as a base electrode because of its role. Such a writing method in which a writing current is supplied to the magnetization fixed layer 160, that is, the base electrode, can also be referred to as a base writing type. In this method, since the write current is directly supplied to the magnetoresistive effect element 8, the magnitude of the current-induced magnetic field becomes relatively large. Therefore, the write current can be reduced. Moreover, since the magnetization fixed layer 160 introduces a write current, it is desirable that the electric resistance is relatively small. Therefore, the electric resistance may be lowered by making a conductive layer adjacent to the magnetization fixed layer 160.

Next, a method for reading data from the magnetoresistive effect element 8 of this embodiment will be described. First, a read current is passed between the magnetization fixed layer 160 and the magnetization free layer 140 through the nonmagnetic layer 150. Then, data is read by detecting a change in resistance according to the relative angle between the magnetization of the magnetization fixed layer 160 and the magnetization of the magnetization free layer 140. For example, when the magnetization of the magnetization fixed layer 160 and the magnetization of the magnetization free layer 140 are parallel (for example, “0” is stored), the low resistance state is realized, and the magnetization of the magnetization fixed layer 160 and the magnetization of the magnetization free layer 140 are realized. Are antiparallel (example: “1” is stored), a high resistance state is realized. A change in resistance of the magnetoresistive effect element 8 is detected as a voltage signal or a current signal, and data stored in the magnetoresistive effect element 8 is determined using the voltage signal or the current signal.

The magnetoresistive element 9 is used in a memory cell of MRAM 5 (desirably having a write current of 0.5 mA or less) for high integration and large capacity (low current). This is a spin-polarization current writing type spin-injection magnetization reversal type magnetoresistive effect element. The magnetoresistive effect element 9 includes a first magnetization fixed layer 10, a first nonmagnetic layer 20, a first magnetization free layer 30, a second magnetization free layer 40, a second nonmagnetic layer 50, and a second magnetization fixed layer 60. It has. The first magnetization fixed layer 10 is provided adjacent to one surface of the first nonmagnetic layer 20, and the first magnetization free layer 30 is provided adjacent to the other surface of the first nonmagnetic layer 20. Yes. That is, the first nonmagnetic layer 20 is sandwiched between the first magnetization fixed layer 10 and the first magnetization free layer 30. The second magnetization fixed layer 60 is provided adjacent to one surface of the second nonmagnetic layer 50, and the second magnetization free layer 40 is provided adjacent to the other surface of the second nonmagnetic layer 50. It has been. That is, the second nonmagnetic layer 50 is sandwiched between the second magnetization fixed layer 60 and the second magnetization free layer 40.

The magnetoresistive effect element 9 further includes a first conductive layer 70 and a second conductive layer 80. The first conductive layer 70 is provided so as to be electrically connected to the first magnetization free layer 30 and the second magnetization free layer 40. In particular, as shown in FIG. 2, the first conductive layer 70 is sandwiched between the first magnetization free layer 30 and the second magnetization free layer 40. The second conductive layer 80 is provided so as to be electrically connected to the first conductive layer 70. Note that the first conductive layer 70 and the second conductive layer 80 may be omitted. An embodiment in which the second conductive layer 80 is omitted will be described later. Although not shown, it is desirable that an electrode layer, a diffusion prevention layer, a base layer, and the like be appropriately provided in addition to the above-described layers.

Each of the first nonmagnetic layer 20 and the second nonmagnetic layer 50 is a nonmagnetic layer formed of a nonmagnetic material. The first nonmagnetic layer 20 and the second nonmagnetic layer 50 may have any electrical characteristics, and the material may be a conductor, an insulator, or a semiconductor. However, the second nonmagnetic layer 50 is preferably formed of an insulator.

Each of the first magnetization fixed layer 10, the first magnetization free layer 30, the second magnetization free layer 40, and the second magnetization fixed layer 60 is formed of a ferromagnetic material. Among these, the first magnetization fixed layer 10 and the first magnetization free layer 30 are a perpendicular magnetization film having a perpendicular magnetic anisotropy. That is, the first magnetization fixed layer 10 and the first magnetization free layer 30 have magnetic anisotropy in the direction perpendicular to the film surface (z-axis direction). On the other hand, the second magnetization free layer 40 and the second magnetization fixed layer 60 are in-plane magnetization films having in-plane magnetic anisotropy. That is, the second magnetization free layer 40 and the second magnetization fixed layer 60 have magnetic anisotropy in the film plane parallel direction (xy in-plane direction). The direction of the easy magnetization axis of the second magnetization free layer 40 is arbitrary. As will be described later, in the present embodiment, the first magnetization fixed layer 10, the first nonmagnetic layer 20, and the first magnetization free layer 30 form a magnetic tunnel junction (MTJ) for writing. Further, the second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed layer 60 form a magnetic tunnel junction (MTJ) for reading.

The magnetoresistive effect element 8 and the magnetoresistive effect element 9 according to the embodiment of the present invention are formed on the same chip. The magnetization free layer 140, the nonmagnetic layer 150, and the magnetization fixed layer 160 of the magnetoresistive effect element 8 are the second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed layer of the magnetoresistance effect element 9, respectively. 60 and the same material are simultaneously formed in the same layer. That is, the MRAM 4 and the MRAM 5 can be formed by the same process, and the number of processes does not increase. As a result, the semiconductor device 1 can be manufactured at a low cost and in a short time.

Next, the magnetoresistive effect element 9 of this embodiment will be described in more detail.

3A to 3C are schematic views schematically showing the configuration of the magnetoresistive effect element 9 according to the embodiment of the present invention. Specifically, FIG. 3A is a perspective view, and FIGS. 3B and 3C are an xy plan view and an xz sectional view in the xyz coordinate system shown in FIG. 3A, respectively. The magnetoresistive effect element 9 has a laminated structure composed of a plurality of layers, and the lamination direction is defined as the z-axis direction. A plane parallel to each layer of the stacked structure is an xy plane.

FIG. 3C shows the magnetization direction of each layer. The magnetization direction of the first magnetization fixed layer 10 is substantially fixed in one direction. On the other hand, the magnetization direction of the first magnetization free layer 30 can be reversed. Since the first magnetization fixed layer 10 and the first magnetization free layer 30 have perpendicular magnetic anisotropy, their magnetization directions are substantially parallel to the z-axis. In the example shown in FIG. 3C, the magnetization of the first magnetization fixed layer 10 is fixed in the + z direction. On the other hand, the magnetization of the first magnetization free layer 30 is allowed to be in the + z direction or the −z direction. That is, the magnetization direction of the first magnetization free layer 30 can be parallel or antiparallel to the magnetization direction of the first magnetization fixed layer 10.

Further, the magnetization direction of the second magnetization fixed layer 60 is substantially fixed in one direction. On the other hand, the magnetization direction of the second magnetization free layer 40 can be reversed. Since the second magnetization fixed layer 60 and the second magnetization free layer 40 have in-plane magnetic anisotropy, their magnetization directions are substantially parallel to the film surface (xy plane). In the example shown in FIG. 3C, the magnetization of the second magnetization fixed layer 60 is fixed in the + x direction. On the other hand, the magnetization of the second magnetization free layer 40 is allowed to have a component in the + x direction or the −x direction. That is, the magnetization direction of the second magnetization free layer 40 can have a component parallel or antiparallel to the magnetization direction of the second magnetization fixed layer 60.

As described above, the magnetoresistive effect element 9 according to this example includes the “first magnetoresistive effect element” including the first magnetization fixed layer 10, the first nonmagnetic layer 20, and the first magnetization free layer 30, and the second A “second magnetoresistive element” including the magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed layer 60 is included. Note that the first magnetoresistance effect element includes a perpendicular magnetization film, and the second magnetoresistance effect element includes an in-plane magnetization film. As will be described later, the first magnetoresistance effect element is used for data writing, and the second magnetoresistance effect element is used for data reading.

Also, the first magnetization free layer 30 of the first magnetoresistance effect element and the second magnetization free layer 40 of the second magnetoresistance effect element are formed in different layers, but are magnetically coupled to each other. In other words, the magnetization state of the first magnetization free layer 30 and the magnetization state of the second magnetization free layer 40 affect each other. In particular, as described later, it is important that the magnetization state of the first magnetization free layer 30 affects the magnetization state of the second magnetization free layer 40.

FIG. 3B also shows the positions of the center of gravity G30 of the first magnetization free layer 30 and the center of gravity G40 of the second magnetization free layer 40 in the xy plane. The center of gravity referred to here is the center of gravity in the geometric sense on the xy plane. That is, when the position vector of an arbitrary point i of the geometric shape is Ri = (Xi, Yi), the center-of-gravity position vector Rg = (Xg, Yg) satisfies the relationship of Σi (Ri−Rg) = 0. . Here, Σi means the total sum related to i. For example, in the case of a rectangle or parallelogram, the center of gravity is the intersection of diagonal lines, and in the case of an ellipse, the center of gravity is the center.

According to the present embodiment, the centroid G30 of the first magnetization free layer 30 and the centroid G40 of the second magnetization free layer 40 are shifted in the xy plane. That is, in the xy plane, the center of gravity G40 of the second magnetization free layer 40 is shifted from the center of gravity G30 of the first magnetization free layer 30 in the “first direction” parallel to the film surface. In the example shown in FIG. 3B, the first direction (shift direction) is the −x direction. The first magnetization free layer 30 and the second magnetization free layer 40 may overlap at least partially, or may not overlap.

The shape of each layer in the xy plane is not limited to a rectangle, and may be a circle, an ellipse, a rhombus, a hexagon, or the like. In addition, irregularities can be appropriately provided on the surface of each layer so that appropriate characteristics can be obtained. Also, the area of each layer is arbitrary.

Next, the material of each layer of the magnetoresistive effect element 9 will be exemplified. The materials shown below are all examples, and any material may be used in practice as long as the above-described magnetization state can be realized.

The first magnetization fixed layer 10 and the first magnetization free layer 30 that are perpendicular magnetization films are formed of a ferromagnetic material including at least one material selected from Fe, Co, and Ni. Moreover, perpendicular magnetic anisotropy can be stabilized by adding Pt or Pd. In addition to this, B, C, N, O, Al, Si, P, Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, Mo, Tc, Ru, Rh, Ag, Hf, Ta, W , Re, Os, Ir, Au, Sm, etc. can be added to adjust the magnetic properties. Specific materials include Co, Co—Pt, Co—Pd, Co—Cr, Co—Pt—Cr, Co—Cr—Ta, Co—Cr—B, Co—Cr—Pt—B, and Co—Cr. -Ta-B, Co-V, Co-Mo, Co-W, Co-Ti, Co-Ru, Co-Rh, Fe-Pt, Fe-Pd, Fe-Co-Pt, Fe-Co-Pd, Sm -Co, Gd-Fe-Co, Tb-Fe-Co, Gd-Tb-Fe-Co and the like are exemplified. In addition, perpendicular magnetic anisotropy can also be exhibited by laminating a layer containing any one material selected from Fe, Co, and Ni with different layers. Specifically, a laminated film of Co / Pd, Co / Pt, Co / Ni, Fe / Au, etc. is exemplified.

The second magnetization free layer 40 and the second magnetization fixed layer 60 that are in-plane magnetization films are formed of a ferromagnetic material including at least one material selected from Fe, Co, and Ni. In addition to this, B, C, N, O, Al, Si, P, Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, Mo, Tc, Ru, Rh, Ag, Hf, Ta, W , Re, Os, Ir, Au, etc. can be added to adjust the magnetic properties. Specific examples of the material include Ni—Fe, Co—Fe, Fe—Co—Ni, Ni—Fe—Zr, Co—Fe—B, and Co—Fe—Zr—B.

Various materials can be used for the first nonmagnetic layer 20. For example, a conductor such as Al, Cr, or Cu can be used. Further, an insulator such as Mg—O may be used. As will be described later, the first nonmagnetic layer 20 included in the first magnetoresistive effect element used for writing exists on the path of the write current. Generally, it is desirable that the resistance of the write current path is low. In this respect, a material having low resistance is preferable. On the other hand, if the first nonmagnetic layer 20 has a filtering effect that preferentially passes one spin-polarized electron, the current density required for writing is reduced. In this respect, Mg—O is preferable. The material of the first nonmagnetic layer 20 can be appropriately selected according to the application of the magnetoresistive effect element 9.

The second nonmagnetic layer 50 is preferably formed of an insulating material. Specific examples of the material include Mg—O, Al—O, Al—N, Ni—O, and Hf—O. However, it is also possible to use a semiconductor or a metal as a material.

The second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed layer 60 are included in the second magnetoresistive effect element used for reading. Exists. For this reason, it is preferable to use a material that exhibits a high MR ratio. For example, in recent years, it has been reported that a very large MR ratio of 500% is obtained in a magnetic tunnel junction (MTJ) of a Co—Fe—B / Mg—O / Co—Fe—B system (Hayakawa et al. , “Effective of high annealing temperature on giant tunnel magnetorelatency ratio of CoFeB / MgO / CoFeB magnetotunnel junctions”, Applied Vs. From this point of view, the second nonmagnetic layer 50 preferably contains Mg—O. Further, it is preferable that at least one of the second magnetization free layer 40 and the second magnetization fixed layer 60 contains Co—Fe—B.

Also, a laminated film (laminated ferri-coupled film) in which the magnetizations are antiparallel coupled can be applied to a magnetization fixed layer such as the first magnetization fixed layer 10 or the second magnetization fixed layer 60. In this case, the magnetization of the magnetization fixed layer can be more firmly fixed, and the influence of the leakage magnetic field to the outside can be reduced. As a mode of antiparallel coupling, magnetostatic coupling or exchange coupling based on RKKY interaction can be considered. For example, the second magnetization fixed layer 60 can be formed of a laminated film of Co—Fe—B / Ru / Co—Fe—B. Thereby, the upper and lower Co—Fe—B films are antiparallel coupled by the RKKY interaction of the Ru film. As a result, the fixed magnetization can be made stronger and the leakage magnetic field to the outside can be reduced.

Further, the magnetization can be more firmly fixed by making the antiferromagnetic layer adjacent to the magnetization fixed layer such as the first magnetization fixed layer 10 or the second magnetization fixed layer 60. Examples of the material of the antiferromagnetic layer include Pt—Mn, Ir—Mn, and Fe—Mn. For example, it is conceivable that a Pt—Mn antiferromagnetic layer is adjacent to the second magnetization fixed layer 60 of Co—Fe—B / Ru / Co—Fe—B.

The first conductive layer 70 and the second conductive layer 80 are preferably formed of a material having a small electrical resistance. Further, by appropriately selecting the material of the first conductive layer 70, the second magnetization free layer 40 directly below can be protected from the processing process. In this respect, a material having high chemical stability is desirable. Further, the growth of the first magnetization free layer 30 can be controlled by appropriately selecting the material of the first conductive layer 70 as the underlayer of the first magnetization free layer 30.

Further, the first conductive layer 70 sandwiched between the first magnetization free layer 30 and the second magnetization free layer 40 may be formed of a magnetic material such as Fe, Co, or Ni. In this case, the leakage magnetic flux from the first magnetization free layer 30 can be efficiently transmitted to the second magnetization free layer 40, which is preferable from the viewpoint of the magnetic coupling described above. From this point of view, the first conductive layer 70 is preferably formed of a material having high magnetic permeability.

In addition, the same material as the 2nd magnetization free layer 40, the 2nd nonmagnetic layer 50, and the 2nd magnetization fixed layer 60 is used for the magnetization free layer 140 of the magnetoresistive effect element 8, the nonmagnetic layer 150, and the magnetization fixed layer 160, respectively. be able to. When the magnetoresistive effect element 8 and the magnetoresistive effect element 9 are manufactured by the same process, the magnetization free layer 140, the nonmagnetic layer 150, and the magnetization fixed layer 160 are the second magnetization free layer 40 and the second nonmagnetic layer, respectively. 50 and the same material as the second magnetization fixed layer 60.

Next, the principle of the magnetoresistive effect element 9 according to this embodiment will be described in detail. 4A and 4B schematically show a leakage magnetic field (leakage magnetic flux) generated in the periphery by the magnetization of the first magnetization free layer 30. FIG. 4A shows a state in the xz plane, and FIG. 4B shows a state in the xy plane.

Consider the case where the magnetization direction of the first magnetization free layer 30 is uniformly aligned in the + z-axis direction. In this case, the magnetic field lines of the leakage magnetic field have a dipole shape as shown in FIG. 4A and come out from the upper surface (positive magnetic pole side) of the first magnetization free layer 30 and smoothly connect to the lower surface (negative magnetic pole side). . As shown in FIG. 4B, the leakage magnetic field spreads radially from the center of gravity G30 of the first magnetization free layer 30. That is, in the vicinity of the center of gravity G30 of the first magnetization free layer 30, the leakage magnetic field is substantially in the z direction, and as the end of the first magnetization free layer 30 is approached, the leakage magnetic field has a larger xy component (component in the film plane parallel direction). Will have.

As described above, the center of gravity G40 of the second magnetization free layer 40 is shifted from the center of gravity G30 of the first magnetization free layer 30 in the “first direction” in the xy plane. Accordingly, the leakage magnetic field generated by the magnetization of the first magnetization free layer 30 has an xy component along the “first direction” at the position of the center of gravity G40 of the second magnetization free layer 40. That is, the magnetization of the first magnetization free layer 30 exerts a magnetic force substantially parallel or substantially antiparallel to the “first direction” on the second magnetization free layer 40. As a result, the magnetization of the second magnetization free layer 40 has a component substantially parallel or substantially antiparallel to the “first direction”.

5A and 5B illustrate two memory states that the magnetoresistive effect element 1 can take. In the example shown in FIGS. 5A and 5B, the magnetization direction of the first magnetization fixed layer 10 is fixed in the + z direction, and the magnetization direction of the second magnetization fixed layer 60 is fixed in the + x direction. However, one or both of these magnetization directions may be reversed. Further, in this example, the shift direction (first direction) of the center G40 of the second magnetization free layer 40 with respect to the center G30 of the first magnetization free layer 30 is the −x direction. This first direction is also arbitrary. However, it is desirable that the first direction is substantially parallel or substantially antiparallel to the magnetization direction of the second magnetization fixed layer 60.

In FIG. 5A, the magnetization of the first magnetization free layer 30 is in the + z direction. In this case, the leakage magnetic field from the first magnetization free layer 30 has a + x component along the first direction at the position of the center of gravity G40 of the second magnetization free layer 40. Therefore, due to the magnetic coupling between the first magnetization free layer 30 and the second magnetization free layer 40, the magnetization of the second magnetization free layer 40 has a component in the + x direction. At this time, the magnetization direction of the second magnetization free layer 40 has a component “parallel” to the magnetization direction of the second magnetization fixed layer 60, and the second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed layer. The resistance value of the second magnetoresistive element composed of 60 is relatively small. The memory state shown in FIG. 5A is hereinafter referred to as a “0” state (example: a state in which data “0” is stored).

On the other hand, in FIG. 5B, the magnetization of the first magnetization free layer 30 faces the −z direction. In this case, the leakage magnetic field from the first magnetization free layer 30 has a −x component along the first direction at the position of the center of gravity G40 of the second magnetization free layer 40. Accordingly, the magnetic coupling between the first magnetization free layer 30 and the second magnetization free layer 40 causes the magnetization of the second magnetization free layer 40 to have a component in the −x direction. At this time, the magnetization direction of the second magnetization free layer 40 has a component “antiparallel” to the magnetization direction of the second magnetization fixed layer 60, and the second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization The resistance value of the second magnetoresistive effect element composed of the fixed layer 60 is relatively large. The memory state shown in FIG. 5B is hereinafter referred to as a “1” state (example: a state in which data “1” is stored).

As exemplified above, the magnetization direction of the second magnetization free layer 40 is changed to the first magnetization free layer due to the shift of the center of gravity between the first magnetization free layer 30 and the second magnetization free layer 40 and magnetic coupling. It is uniquely determined according to the magnetization direction of 30. When the magnetization direction of the first magnetization free layer 30 is reversed, the magnetization direction of the second magnetization free layer 40 also changes. As a result, a difference occurs in the relative angle of the magnetization direction between the second magnetization free layer 40 and the second magnetization fixed layer 60, and two memory states of “0” state and “1” state are realized. That is, two memory states are realized according to the magnetization direction of the first magnetization free layer 30.

The direction of fixed magnetization of the second magnetization fixed layer 60 is substantially parallel or substantially antiparallel to the direction of shift of the center of gravity (first direction) between the first magnetization free layer 30 and the second magnetization free layer 40. Preferably it is. This is because the variable magnetization of the second magnetization free layer 40 has a component that is substantially parallel or substantially antiparallel to the first direction depending on the magnetization direction of the first magnetization free layer 30. When the direction of the fixed magnetization of the second magnetization fixed layer 60 is substantially parallel or substantially antiparallel to the first direction, the relative angle between the direction of the fixed magnetization and the direction of the variable magnetization of the second magnetization free layer 40 The change of becomes remarkable. As a result, the difference between the two memory states becomes significant.

In this embodiment, the information stored as the perpendicular magnetization component in the first magnetization free layer 30 is transmitted to the magnetization component in the film surface direction of the second magnetization free layer 40 through magnetic coupling. I can say that. As long as such information transmission is realized, the magnetic coupling method is not limited to the one using the above-described leakage magnetic field. For example, the first magnetization free layer 30 and the second magnetization free layer 40 can be magnetically related by any magnetic coupling method such as a method using exchange coupling.

Further, in the example of FIGS. 5A and 5B, the case where the magnetization of the second magnetization free layer 40 is completely saturated by the leakage magnetic field from the first magnetization free layer 30 is described. Actually, the magnetization of the second magnetization free layer 40 may not be completely saturated. It is only necessary that the magnetization direction of the second magnetization free layer 40 varies depending on the magnetization direction of the first magnetization free layer 30.

Further, as long as the magnetization direction of the second magnetization free layer 40 can be changed according to the magnetization direction of the first magnetization free layer 30, the easy axis of magnetization of the second magnetization free layer 40 may be along any direction. In the case of the easy magnetization axis along the x-axis direction as in the above example, the magnetization of the second magnetization free layer 40 is reversed between the directions along the easy magnetization axis. On the other hand, in the case of the easy axis along the y-axis direction, the magnetization of the second magnetization free layer 40 rotates in the hard axis direction centering on the easy axis.

In addition, it is desirable that the magnetic anisotropy of the second magnetization free layer 40 is not extremely large. This is because if the magnetic anisotropy of the second magnetization free layer 40 becomes extremely large, magnetization reversal by a leakage magnetic field from the first magnetization free layer 30 becomes difficult. Further, the magnetic anisotropy of the second magnetization free layer 40 may be imparted by crystal magnetic anisotropy or may be imparted by shape magnetic anisotropy. The second magnetization free layer 40 may be a laminated film made of a plurality of ferromagnetic materials. A layer made of a non-magnetic material may be inserted between these ferromagnetic materials as long as the magnetization state is not disturbed.

Next, an operation method of the magnetoresistive effect element 9 of the present embodiment, specifically, a writing method and a reading method will be described.

First, a method for reading the magnetoresistive effect element 9 of the present embodiment will be described. 5A and 5B are also conceptual diagrams for explaining a method of reading data from the magnetoresistive effect element 9. In data reading, the magnitude of the resistance value due to the magnetoresistive effect is detected. For this purpose, a “second magnetoresistive element” composed of the second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed layer 60 is used, and the second magnetization free layer 40 and the second magnetization fixed layer 60 are used. A read current Iread flows between the two.

FIG. 5A shows the case of the “0” state. In this case, the magnetization direction of the second magnetization free layer 40 is substantially parallel to the magnetization direction of the second magnetization fixed layer 60, and the resistance value of the second magnetoresistance effect element is relatively small. On the other hand, FIG. 5B shows the case of the “1” state. In this case, the magnetization direction of the second magnetization free layer 40 is substantially antiparallel to the magnetization direction of the second magnetization fixed layer 60, and the resistance value of the second magnetoresistive element is relatively large. That is, the read current Iread or the magnitude of the read voltage corresponding to the read current Iread varies depending on the “0” state or the “1” state. Therefore, by comparing the read current Iread or the read voltage with a predetermined reference level, it is possible to determine whether the state is “0” or “1”. That is, information recorded in the magnetoresistive effect element 1 can be read.

In the example shown in FIGS. 5A and 5B, the read current Iread flows through the first conductive layer 70 and the second conductive layer 80. However, the method of flowing the read current Iread to the second magnetoresistance effect element is not limited to the example shown in FIGS. 5A and 5B. It suffices for the read current Iread to flow bidirectionally between the second magnetization free layer 40 and the second magnetization fixed layer 60, and the current paths in other portions can be designed as appropriate.

Next, a writing method of the magnetoresistive effect element 9 of this embodiment will be described. 6A and 6B are conceptual diagrams for explaining a method of writing data to the magnetoresistive effect element 9. Data writing is realized by the “spin injection magnetization reversal method”. Specifically, a “first magnetoresistive effect element” including the first magnetization fixed layer 10, the first nonmagnetic layer 20, and the first magnetization free layer 30 is used, and the first magnetization fixed layer 10 and the first magnetization free layer are used. A write current Iwrite is passed between the layers 30.

FIG. 6A shows a transition from the “0” state (see FIG. 5A) to the “1” state (see FIG. 5B), that is, the path of the write current Iwrite at the time of writing “1”. Consider a case where a write current Iwrite is introduced in the direction of an arrow in the “0” state as shown in FIG. 6A. In this case, the write current Iwrite flows from the first magnetization fixed layer 10 to the first magnetization free layer 30 through the first nonmagnetic layer 20, and the conduction electrons pass through the first magnetization free layer 30 through the first nonmagnetic layer 20. It flows to one magnetization fixed layer 10. In FIG. 6A, the magnetization direction of the first magnetization fixed layer 10 is fixed in the + z direction, and the conduction electrons having the spin angular momentum in the −z direction are compared with the conduction electrons having the spin angular momentum in the + z direction. More reflections are made at the interface of the single magnetization fixed layer 10. As a result, in the first magnetization free layer 30, electrons having a spin angular momentum in the −z direction become the majority, and magnetization reversal in the −z direction is induced. When the magnetization of the first magnetization free layer 30 is reversed in the −z direction, the magnetization of the second magnetization free layer 40 is rotated in the −x direction by the magnetic coupling described above. That is, the “1” state shown in FIG. 5B is obtained.

On the other hand, FIG. 6B shows a transition from the “1” state (see FIG. 5B) to the “0” state (see FIG. 5A), that is, the path of the write current Iwrite at the time of writing “0”. As shown in FIG. 6B, consider a case where the write current Iwrite is introduced in the direction of the arrow in the “1” state. In this case, the write current Iwrite flows from the first magnetization free layer 30 to the first magnetization fixed layer 10 through the first nonmagnetic layer 20, and the conduction electrons pass through the first magnetization fixed layer 10 through the first nonmagnetic layer 20. It flows to one magnetization free layer 30. In FIG. 6B, the magnetization direction of the first magnetization fixed layer 10 is fixed in the + z direction, and many conduction electrons having a spin angular momentum in the + z direction flow into the first magnetization free layer 30. As a result, in the first magnetization free layer 30, electrons having a spin angular momentum in the + z direction become majority, and magnetization reversal in the + z direction is induced. When the magnetization of the first magnetization free layer 30 is reversed in the + z direction, the magnetization of the second magnetization free layer 40 is rotated in the + x direction due to the magnetic coupling described above. That is, the “0” state shown in FIG. 5A is obtained.

In this way, “1” write from the “0” state and “0” write from the “1” state are realized. Although not shown, “0” writing from the “0” state and “1” writing from the “1” state, that is, overwriting is also possible.

In the example shown in FIG. 6A, the write current Iwrite flows from the first magnetoresistive element to the second conductive layer 80 via the first conductive layer 70. In the example shown in FIG. 6B, the write current Iwrite Iwrite flows from the second conductive layer 80 into the first magnetoresistive element via the first conductive layer 70. However, the method of flowing the write current Iwrite to the first magnetoresistive effect element is not limited to the example shown in FIGS. 6A and 6B. The write current Iwrite only has to flow bidirectionally between the first magnetization fixed layer 10 and the first magnetization free layer 30, and the current paths in other parts can be appropriately designed.

Further, it is desirable that the area of the junction between the first magnetization fixed layer 10 and the first magnetization free layer 30 is appropriately small. This is because as the area becomes smaller, the current density increases and the current value required for writing can be reduced. The feature length is preferably 100 nm or less.

As described above, in the magnetoresistive effect element 9 according to the present embodiment, the first magnetization fixed layer 10, the first nonmagnetic layer 20, and the first magnetization free layer 30 are used at the time of data writing. In this sense, the first magnetization fixed layer 10, the first nonmagnetic layer 20, and the first magnetization free layer 30 are referred to as a “write layer group”. On the other hand, the second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed layer 60 are used at the time of data reading. In this sense, the second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed layer 60 are referred to as a “read layer group”.

According to the present embodiment, the write layer group and the read layer group are provided separately, but are related to each other through magnetic coupling. Information written to the first magnetization free layer 30 of the write layer group is transmitted to the second magnetization free layer 40 of the read layer group via magnetic coupling. In other words, since there is information transmission through magnetic coupling, it is possible to separately provide a write layer group for writing and a read layer group for reading. Therefore, the write layer group and the read layer group can be optimized independently so that desired characteristics can be obtained. As a result, it is possible to simultaneously improve the write characteristics and the read characteristics. For example, a perpendicular magnetization film having appropriate material characteristics for reducing the write threshold current density can be applied to the write layer group, and an MTJ that exhibits a high MR ratio can be applied to the read layer group.

Next, the circuit configuration of the memory cell 201 in the MRAM 5 of this embodiment will be described with reference to FIGS. 7A and 7B. 7A and 7B, the magnetoresistive effect element 9 is used as the memory element of the memory cell 201. This circuit configuration is similarly applied to the memory cell 201 (using the magnetoresistive effect element 8 as a storage element) of the MRAM 4 of the present embodiment.

FIG. 7A is a circuit diagram showing a configuration example of a memory cell in which the magnetoresistive effect element of this embodiment is integrated. FIG. 7A shows a circuit configuration of a single memory cell 201. In practice, however, a plurality of memory cells 201 are arranged in an array and integrated in the MRAM 5 (or 4). Those skilled in the art will appreciate.

In the case of the magnetoresistive effect element 9, in FIG. 7A, the terminal connected to the second magnetization fixed layer 60 is connected to the ground line GND for reading via the node N3. A terminal connected to the first magnetization fixed layer 10 is connected to one of the source / drain of the MOS transistor M1 via the node N1. The other of the source / drain is connected to the bit line BL1. A terminal connected to the second conductive layer 80 is connected to one of the source / drain of the MOS transistor M2 via the node N2. The other of the source / drain is connected to the bit line BL2. The gates of the MOS transistors M1 and M2 are connected to a common word line WL. That is, 210 in the figure corresponds to the first magnetization fixed layer 10, the first nonmagnetic layer 20, the first magnetization free layer 30, the first conductive layer 70, and the second conductive layer 80 of the first magnetoresistive effect element. .

In the case of the magnetoresistive effect element 8, in FIG. 7A, one of two terminals connected to both ends of the magnetization fixed layer 160 is connected to one source / drain of the MOS transistor M1 via the node N1, and the other Is connected to one source / drain of MOS transistor M2 via node N2. A terminal connected to the magnetization free layer 140 is connected to a ground line GND for reading via a node N3. That is, 210 in the figure corresponds to the magnetization fixed layer 160.

FIG. 7B is a block diagram showing a configuration example of an MRAM in which the memory cells of this embodiment are integrated. In FIG. 7B, the MRAM 260 includes a memory cell array 261 in which a plurality of memory cells 201 are arranged in a matrix. The memory cell array 261 includes a reference cell 201r that is referred to when reading data together with the memory cell 201 used for data recording described with reference to FIG. 7A. The structure of the reference cell 201r is the same as that of the memory cell 201.

The word line WL is connected to the X selector 262. The X selector 262 selects the word line WL connected to the target memory cell 201s as the selected word line WLs during the data write operation and the read operation. The bit line BL1 is connected to the Y-side current termination circuit 264, and the bit line BL2 is connected to the Y selector 263. The Y selector 263 selects the bit line BL2 connected to the target memory cell 201s as the selected bit line BL2s during the data write operation and the read operation. The Y-side current termination circuit 264 selects the bit line BL1 connected to the target memory cell 201s as the selected bit line BL1s.

The Y-side current source circuit 265 supplies or draws a predetermined write current (Iwrite) to the selected bit line BL2s during the data write operation. The Y-side power supply circuit 266 supplies a predetermined voltage to the Y-side current termination circuit 264 during the data write operation. As a result, the write current (Iwrite) flows into or out of the Y selector 263. These X selector 262, Y selector 263, Y side current termination circuit 264, Y side current source circuit 265, and Y side power supply circuit 266 are “write current supply circuits for supplying a write current (Iwrite) to the memory cell 201. Is comprised.

The read current adding circuit 267 supplies a predetermined read current (Iread) to the selected second bit line BL2s during the data read operation. The Y-side current termination circuit 264 sets the bit line BL1 to “Open”. The read current load circuit 267 supplies a predetermined read current (Iread) to the reference bit line BL2r connected to the reference cell 201r. The sense amplifier 268 reads data from the target memory cell 201s based on the difference between the potential of the reference bit line BL2r and the potential of the selected bit line BL2s, and outputs the data. The X selector 262, Y selector 263, Y-side current termination circuit 264, read current addition circuit 267, and sense amplifier 268 constitute a “read current supply circuit” for supplying a read current (Iread) to the memory cell 201. is doing.

Next, a writing method and a reading method in the MRAM shown in FIGS. 7A and 7B will be described. First, when writing, the word line WL is pulled up to a “high” level, and the MOS transistors M1 and M2 are turned “ON”. One of the bit lines BL1 and BL2 is pulled up to the “high” level, and the other is pulled down to the “low” level. Which of the bit lines BL1 and BL2 is pulled up to a “high” level and which is pulled down to a “low” level is determined by data to be written in the magnetoresistive element 9 (or magnetoresistive element 8). Is done. That is, it is determined according to the direction of the current flowing through the first magnetization free layer 10 (or the magnetization fixed layer 160). As described above, data “0” and “1” can be written separately.

On the other hand, when reading, the word line WL is pulled up to the “high” level, and the MOS transistors M1 and M2 are turned “ON”. One of the bit lines BL1 and BL2 is pulled up to the “high” level, and the other is set to “open” (floating). At this time, a read current passing through the magnetoresistive effect element 9 (or the magnetoresistive effect element 8) from one of the bit lines BL1 and BL2 is transferred to the second conductive layer 80, the first conductive layer 70, the second magnetization free layer 40, the first 2 It flows to the ground line GND via the nonmagnetic layer 50 and the second magnetization fixed layer 60 (or the magnetization fixed layer 160, the nonmagnetic layer 150, and the magnetization free layer 140). The potential of the bit line through which the read current flows or the magnitude of the read current depends on a change in resistance of the magnetoresistive effect element 9 (or magnetoresistive effect element 8) due to the magnetoresistive effect. By detecting this change in resistance as a voltage signal or a current signal, high-speed reading can be performed.

However, the circuit configuration shown in FIGS. 7A and 7B and the circuit operation described here are merely examples of a method for carrying out the present invention, and can be implemented by other circuit configurations.

When the circuit configuration of FIG. 7A is applied to the current-induced magnetic field write type magnetoresistive element 8, it has been reported that operation at 200 MHz or higher is possible (N. Sakimura et al., IEEE JOURNAL). OF SOLID-STATE CIRCUITS, Vol. 42, 2007, p. 830.). However, other circuit configurations as shown in FIG. 8 can be used to perform higher-speed operation.

FIG. 8 is a circuit diagram showing another configuration example of the memory cell in which the magnetoresistive effect element of this embodiment is integrated. Although FIG. 8 shows a circuit configuration of a single memory cell 202, it will be understood by those skilled in the art that a plurality of memory cells 202 are actually arranged in an array and integrated in an MRAM. It will be understood. When the circuit configuration of FIG. 8 is applied to the current-induced magnetic field writing type magnetoresistive element 8, it has been reported that operation at 500 MHz or higher is possible (N. Sakimura et al., IEEE JOURNAL). OF SOLID-STATE CIRCUITS, Vol. 42, 2007, p. 830.).

In FIG. 8, two MTJ1 and MTJ2 are used for one memory cell 202. Complementary data ("0" and "1" or "1" and "0") are stored in MTJ1 and MTJ2. In addition, in the memory cell 202, a read signal is sensed by the MOS transistors M13 and M14.

When magnetoresistive effect elements 8 (MTJ1) and 8 (MTJ2) are used as MTJ1 and MTJ2, in magnetoresistive effect element 8 (MTJ2), one of the two terminals connected to both ends of magnetization fixed layer 160 is a MOS transistor. One source / drain of M11 is connected via node N11, and the other is connected to one end of magnetization fixed layer 160 of magnetoresistive effect element 8 (MTJ1) via node N12. A terminal connected to the magnetization free layer 140 is connected to a wiring SPL that supplies a read current via a node N14. In the magnetoresistive effect element 8 (MTJ1), one of two terminals connected to both ends of the magnetization fixed layer 160 is connected to the other end of the magnetization fixed layer 160 of the magnetoresistive effect element 8 (MTJ2) via the node N12. The other is connected to one source / drain of the MOS transistor M12 via a node N13. A terminal connected to the magnetization free layer 140 is connected to a ground line GND for reading via a node N15. That is, 211 and 212 in the figure correspond to the magnetization fixed layer 160 of the first magnetoresistance effect element 8 (MTJ1) and 8 (MTJ2), respectively.

When the magnetoresistive effect elements 9 (MTJ1) and 9 (MTJ2) are used as the MTJ1 and MTJ2, in the magnetoresistive effect element 9 (MTJ2), the terminal connected to the second magnetization fixed layer 60 is a wiring for supplying a read current Connected to SPL via node N14. A terminal connected to the first magnetization free layer 10 is connected to one source / drain of the MOS transistor M11 via a node N11. A terminal connected to the second conductive layer 80 is connected to the first magnetization free layer 30 of the magnetoresistive effect element 9 (MTJ1) via the node N12. In the magnetoresistive effect element 9 (MTJ1), a terminal connected to the first magnetization fixed layer 10 is connected to a ground line GND for reading via a node N15. A terminal connected to the first magnetization free layer 30 is connected to the second conductive layer 80 of the magnetoresistive effect element 9 (MTJ2) via the node N12. Second conductive layer 80 is connected to one source / drain of MOS transistor M12 via node N13. That is, 211 and 212 in the figure are the first magnetization free layer 10, the first nonmagnetic layer 20, the first magnetization fixed layer 30, and the first conductive layer of the magnetoresistive effect elements 9 (MTJ1) and 9 (MTJ2), respectively. 70 corresponds to the second conductive layer 80.

Next, a writing method and a reading method in the MRAM shown in FIG. 8 will be described. First, when writing, the word line WWL is pulled up to a “high” level, and the MOS transistors M11 and M12 are turned “ON”. One of the bit lines WBLa and WBLb is pulled up to the “high” level, and the other is pulled down to the “low” level. Which of the bit lines WBLa and WBLb is pulled up to the “high” level and which is pulled down to the “low” level is determined by the data to be written in the MTJ1 and MTJ2. That is, it is determined according to the direction of the current flowing through the two first magnetization free layers 30 (or the two magnetization fixed layers 160). Thereby, complementary data ("0" and "1" or "1" and "0") are stored in MTJ2 and MTJ1.

On the other hand, when reading, the word line RWL is pulled up to “high” level, and the MOS transistor M15 is turned “ON”. Further, the read voltage supply line SPL is pulled up to the “high” level. At this time, the read current passing through the paths of the node N14, MTJ2, node N12, MTJ1, and node N15 from the read voltage supply line SPL is the second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed of MTJ1 and MTJ2. It flows to the ground line GND via the layer 60 (or the magnetization fixed layer 160, the nonmagnetic layer 150, and the magnetization free layer 140 of MTJ1 and MTJ2). At this time, the potential of the node N12 between MTJ2 and MTJ1 depends on complementary data stored in MTJ2 and MTJ1. Therefore, the potential of the node N12 is sensed by the MOS transistors M13 and M14 and output to the bit line RBL, thereby enabling high-speed reading.

However, the circuit configuration shown in FIG. 8 and the circuit operation described here are merely examples of a method for carrying out the present invention, and can be implemented by other circuit configurations.

According to this embodiment, in the MRAM using the spin transfer magnetization reversal method, it is possible to independently improve the writing characteristics, the recording data holding characteristics, and the reading characteristics. This is because, in the magnetoresistive effect element 1 according to this embodiment, the portion responsible for writing and recording data is different from the portion responsible for reading. As described in Japanese Patent Application Laid-Open No. 2007-142364 (corresponding US application US2007086121 (A1)), a write threshold current density of 5 MA / cm ² or less is obtained by using a perpendicular magnetization film in which various constants are appropriately set. Can perform spin injection magnetization reversal. On the other hand, the aforementioned Hayaka et al. , Applied Physics Letters, Vol. 89, p. 232510, (2006), an MR ratio close to 500% can be obtained by using an MTJ having a certain laminated structure. According to the present embodiment, it is possible to reduce the write threshold current density by forming the first magnetization fixed layer 10 and the first magnetization free layer 30 that control data writing / holding with the perpendicular magnetization film. In addition, by forming the second magnetization free layer 40 and the second magnetization fixed layer 60 that are responsible for data reading with in-plane magnetization films, it is possible to increase the MR ratio and increase the read signal.

Here, consider one MTJ using a perpendicular magnetization film in order to reduce the write threshold current density. It is considered difficult to simultaneously improve the read characteristics of the same MTJ for the following reason. As described in Japanese Patent Application Laid-Open No. 2007-142364 (corresponding US application US2007086121 (A1)), in order to reduce the write threshold current density, the recording layer (in this case, the first magnetization free layer 30) is used. (E.g.) is preferably moderately small. However, generally, when the saturation magnetization is reduced, the spin polarizability of the magnetic layer is lowered. When the spin polarizability decreases, the MR ratio that contributes to the magnitude of the read signal decreases. That is, it is difficult to improve read characteristics with a perpendicular magnetic film suitable for reducing the write threshold current density.

On the other hand, consider one MTJ using an in-plane magnetization film (Co—Fe—B or the like) that provides a high MR ratio. In the same MTJ, it is difficult to sufficiently reduce the write threshold current density. Further, when the element size is reduced, it is difficult to ensure the heat disturbance resistance of the retained information. According to this embodiment, information is held by the first magnetization free layer 30 formed of a perpendicular magnetization film, so that sufficient thermal disturbance resistance is ensured. This is because a general perpendicular magnetization film has a sufficiently large magnetic anisotropy energy density (Ku).

In the present invention, an appropriate type of MRAM is selected and arranged in a memory-mounted semiconductor device according to a required function. For example, as a memory for a logic circuit that requires high-speed operation, a current-induced magnetic field writing type MRAM capable of high-speed operation is used. As a memory for a main storage device that requires low current (large capacity and high integration), A spin-injection magnetization reversal MRAM capable of reducing current (capacitance / high integration) is used. As a result, a nonvolatile memory mixed system (memory-mounted semiconductor device) that achieves both high-speed processing and large-capacity processing can be obtained.

In the present invention, since the memory cell is non-volatile, the power can be turned off to a basic state (instant on), and power consumption can be reduced. Furthermore, even if different types of MRAM are mounted on the same chip, they can be manufactured using the same process and the same material. As a result, a semiconductor device can be manufactured at a low cost and in a short time.

(First modification)
Next, the configuration of a first modification of the magnetoresistive effect element in each MRAM according to an embodiment of the present invention will be described. FIG. 9 is a perspective view showing a configuration of a first modification of the magnetoresistive effect element in each MRAM according to the embodiment of the present invention. The magnetoresistive effect element 8a and the magnetoresistive effect element 9a according to the first modification of the embodiment of the present invention are formed on the same chip. In this modification, the configuration of the magnetoresistive effect element 8a for the MRAM 4 for high speed operation and the magnetoresistive effect element 9a for the MRAM 5 for high integration and large capacity is the magnetoresistive effect element 8 and the magnetoresistive effect element 9 of FIG. And different.

The magnetoresistive effect element 8a is used in a memory cell of the MRAM 4 for high speed operation. This is a current-induced magnetic field writing type magnetoresistive effect element. The magnetoresistive effect element 8a includes a magnetization free layer 140, a magnetization fixed layer 160a, a nonmagnetic layer 150 provided between the magnetization free layer 140 and the magnetization fixed layer 160a, and a conductivity provided in the vicinity of the magnetization free layer 140. Layer 190 is provided. Although not shown, in addition to the above-described layers, it is desirable that an electrode layer, a diffusion prevention layer, a base layer, and the like are appropriately provided.

The magnetization free layer 140, the magnetization fixed layer 160a, and the nonmagnetic layer 150 are the same as the magnetization free layer 140, the magnetization fixed layer 160, and the nonmagnetic layer 150 in FIG. However, the magnetization fixed layer 160a differs from the magnetization fixed layer 160 of FIG. 2 in that a write current is not passed.

The conductive layer 190 is a wiring layer for data writing, and is formed of a conductor. The direction of magnetization of the magnetization free layer 140 is controlled by a current-induced magnetic field generated by a write current flowing inside the conductive layer 190. That is, data is written in the magnetoresistive effect element 8a by the current-induced magnetic field. Since the write current flows through the conductive layer 190 formed of a high conductivity conductor such as copper (Cu) or aluminum (Al), not the fixed magnetization layer (ferromagnetic material), the write wiring resistance is further reduced. I can do it. The conductive layer 190 is electrically connected to the magnetization fixed layer 160a through the contact 101.
The other configuration is the same as that in the case of FIG.

Next, a method of writing data in the magnetoresistive effect element 8a of this embodiment will be described. First, a write current is passed through the conductive layer 190 from one end to the other end of the conductive layer 190. The magnetization of the magnetization free layer 140 is reversed by a current-induced magnetic field generated by the write current. At that time, the direction of the current-induced magnetic field generated by the direction of the write current can be controlled to change the magnetization of the magnetization free layer 140 to a desired direction. Thereby, desired data is recorded in the magnetization free layer 140. Such a writing method in which a writing current is allowed to flow through the conductive layer 190 can be called a wiring layer writing type because a wiring dedicated to writing is provided.

Next, a method for reading data from the magnetoresistive effect element 8a of this embodiment will be described. First, a read current is passed through the paths of the magnetization free layer 140, the nonmagnetic layer 150, and the magnetization fixed layer 160a. Then, data is read by detecting a change in resistance according to the relative angle between the magnetization of the magnetization fixed layer 160a and the magnetization of the magnetization free layer 140. For example, when the magnetization of the magnetization fixed layer 160a and the magnetization of the magnetization free layer 140 are parallel, a low resistance state is realized, and when the magnetization of the magnetization fixed layer 160a and the magnetization of the magnetization free layer 140 are antiparallel, the resistance is high. A state is realized. A change in resistance of the magnetoresistive effect element 8a is detected as a voltage signal or a current signal, and data stored in the magnetoresistive effect element 8a is determined using the voltage signal or the current signal.

The magnetoresistive effect element 9a is used in a memory cell of the MRAM 5 for high integration and large capacity (low current). This is a spin-polarization current writing type spin-injection magnetization reversal type magnetoresistive effect element. The magnetoresistive effect element 9a includes a first magnetoresistive effect element for writing and a second magnetoresistive effect element for reading. The first magnetoresistive element includes a first magnetization fixed layer 10, a first magnetization free layer 30, and a first nonmagnetic layer 20 sandwiched between the first magnetization fixed layer 10 and the first magnetization free layer 30. . The second magnetoresistance effect element includes a second magnetization free layer 40, a second magnetization fixed layer 60, and a second nonmagnetic layer 50 sandwiched between the second magnetization fixed layer 60 and the second magnetization free layer 40. . The magnetoresistive element 9 a further includes a first conductive layer 70 and a second conductive layer 80. The first conductive layer 70 is provided so as to be electrically connected to the first magnetization free layer 30 and the second magnetization free layer 40. In particular, as shown in FIG. 9, the first conductive layer 70 is sandwiched between the first magnetization free layer 30 and the second magnetization free layer 40. The second conductive layer 80 is provided so as to be electrically connected to the first conductive layer 70. Note that the first conductive layer 70 and the second conductive layer 80 may be omitted. An embodiment in which the second conductive layer 80 is omitted will be described later. Although not shown, it is desirable that an electrode layer, a diffusion prevention layer, a base layer, and the like be appropriately provided in addition to the above-described layers.

The magnetoresistive effect element 9a has a configuration in which the first magnetoresistive effect element and the second magnetoresistive effect element of the magnetoresistive effect element 9 in FIG. 2 are changed to positions opposite to each other with the first conductive layer 70 interposed therebetween. Have. Further, the magnetization fixed layer 60 is electrically connected to the conductive layer 90 (wiring layer) via the contact 102.

Also, the first magnetization free layer 30 of the first magnetoresistance effect element and the second magnetization free layer 40 of the second magnetoresistance effect element are formed in different layers, but are magnetically coupled to each other. In other words, the magnetization state of the first magnetization free layer 30 and the magnetization state of the second magnetization free layer 40 affect each other. In particular, as in the case of FIG. 2, it is important that the magnetization state of the first magnetization free layer 30 affects the magnetization state of the second magnetization free layer 40.

The magnetoresistive effect element 8a and the magnetoresistive effect element 9a according to the embodiment of the present invention are formed on the same chip. The magnetization free layer 140, the nonmagnetic layer 150, and the magnetization fixed layer 160a of the magnetoresistive effect element 8a are respectively the second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed layer of the magnetoresistive effect element 9a. 60 and the same material are simultaneously formed in the same layer. In addition, the conductive layer 190 is simultaneously formed using the same material in the same layer as the conductive layer 90. That is, the MRAM 4 and the MRAM 5 can be formed by the same process, and the number of processes does not increase. As a result, the semiconductor device 1 can be manufactured at a low cost and in a short time.

Next, the magnetoresistive effect element 9a of the present embodiment will be described in more detail.

FIG. 10 is a schematic view schematically showing the configuration of the magnetoresistive effect element 9a according to the embodiment of the present invention. FIG. 10 is an xy plan view in the xyz coordinate system shown in FIG. 9. The magnetoresistive effect element 9a has a laminated structure composed of a plurality of layers, and the lamination direction is defined as the z-axis direction. A plane parallel to each layer of the stacked structure is an xy plane.

FIG. 10 shows the positions of the centroid G30 of the first magnetization free layer 30 and the centroid G40 of the second magnetization free layer 40 in the xy plane. The center of gravity referred to here is the center of gravity in the geometric sense on the xy plane. That is, when the position vector of an arbitrary point i of the geometric shape is Ri = (Xi, Yi), the center-of-gravity position vector Rg = (Xg, Yg) satisfies the relationship of Σi (Ri−Rg) = 0. . Here, Σi means the total sum related to i. For example, in the case of a rectangle or parallelogram, the center of gravity is the intersection of diagonal lines, and in the case of an ellipse, the center of gravity is the center.

According to the present embodiment, the centroid G30 of the first magnetization free layer 30 and the centroid G40 of the second magnetization free layer 40 are shifted in the xy plane. That is, in the xy plane, the center of gravity G40 of the second magnetization free layer 40 is shifted from the center of gravity G30 of the first magnetization free layer 30 in the “first direction” parallel to the film surface. In the example shown in FIG. 10, the first direction (shift direction) is the + x direction. The first magnetization free layer 30 and the second magnetization free layer 40 may overlap at least partially, or may not overlap.

Other configurations and principles regarding the magnetoresistive effect element 9a are the same as those in FIG. The materials of the layers of the magnetoresistive effect element 9a and the magnetoresistive effect element 8a are the same as in the case of FIG.

Next, an operation method of the magnetoresistive effect element 9a of the present embodiment, specifically, a writing method and a reading method will be described.

First, a method of reading the magnetoresistive effect element 9a of this embodiment will be described. 11A and 11B are conceptual diagrams for explaining a method of reading data to the magnetoresistive effect element 9a. In data reading, the magnitude of the resistance value due to the magnetoresistive effect is detected. For this purpose, the second magnetoresistive element (second magnetization free layer 40, second nonmagnetic layer 50, and second magnetization fixed layer 60) is used, and the second magnetization free layer 40 and the second magnetization fixed layer 60 are separated from each other. A read current Iread flows between them.

FIG. 11A shows the case of the “0” state. In this case, the magnetization direction of the second magnetization free layer 40 is substantially parallel to the magnetization direction of the second magnetization fixed layer 60, and the resistance value of the second magnetoresistance effect element is relatively small. On the other hand, FIG. 11B shows the case of the “1” state. In this case, the magnetization direction of the second magnetization free layer 40 is substantially antiparallel to the magnetization direction of the second magnetization fixed layer 60, and the resistance value of the second magnetoresistive element is relatively large. That is, the read current Iread or the magnitude of the read voltage corresponding to the read current Iread varies depending on the “0” state or the “1” state. Therefore, by comparing the read current Iread or the read voltage with a predetermined reference level, it is possible to determine whether the state is “0” or “1”. That is, the information recorded in the magnetoresistive effect element 9a can be read.

In the example shown in FIGS. 11A and 11B, the read current Iread flows through the first conductive layer 70 and the second conductive layer 80. However, the method of flowing the read current Iread to the second magnetoresistive effect element is not limited to the example shown in FIGS. 11A and 11B. It suffices for the read current Iread to flow bidirectionally between the second magnetization free layer 40 and the second magnetization fixed layer 60, and the current paths in other portions can be designed as appropriate.

Next, a writing method of the magnetoresistive effect element 9a of this embodiment will be described. 12A and 12B are conceptual diagrams for explaining a method of writing data to the magnetoresistive effect element 9. Data writing is realized by the “spin injection magnetization reversal method”. Specifically, the first magnetoresistance effect element (the first magnetization fixed layer 10, the first nonmagnetic layer 20 and the first magnetization free layer 30) is used, and the first magnetization fixed layer 10 and the first magnetization free layer 30 are used. A write current Iwrite is passed between the two.

FIG. 12A shows the transition from the “0” state (see FIG. 11A) to the “1” state (see FIG. 11B), that is, the path of the write current Iwrite at the time of writing “1”. Consider the case where a write current Iwrite is introduced in the direction of the arrow in the “0” state as shown in FIG. 12A. In this case, the write current Iwrite flows from the first magnetization fixed layer 10 to the first magnetization free layer 30 through the first nonmagnetic layer 20, and the conduction electrons pass through the first magnetization free layer 30 through the first nonmagnetic layer 20. It flows to one magnetization fixed layer 10. In FIG. 12A, the magnetization direction of the first magnetization fixed layer 10 is fixed in the + z direction, and the conduction electrons having the spin angular momentum in the −z direction are compared with the conduction electrons having the spin angular momentum in the + z direction. More reflections are made at the interface of the single magnetization fixed layer 10. As a result, in the first magnetization free layer 30, electrons having a spin angular momentum in the −z direction become the majority, and magnetization reversal in the −z direction is induced. When the magnetization of the first magnetization free layer 30 is reversed in the −z direction, the magnetization of the second magnetization free layer 40 is rotated in the −x direction by the magnetic coupling described above. That is, the “1” state shown in FIG. 11B is obtained.

On the other hand, FIG. 12B shows a transition from the “1” state (see FIG. 11B) to the “0” state (see FIG. 11A), that is, the path of the write current Iwrite when writing “0”. Consider a case where a write current Iwrite is introduced in the direction of the arrow in the “1” state as shown in FIG. 12B. In this case, the write current Iwrite flows from the first magnetization free layer 30 to the first magnetization fixed layer 10 through the first nonmagnetic layer 20, and the conduction electrons pass through the first magnetization fixed layer 10 through the first nonmagnetic layer 20. It flows to one magnetization free layer 30. In FIG. 12B, the magnetization direction of the first magnetization fixed layer 10 is fixed in the + z direction, and many conduction electrons having a spin angular momentum in the + z direction flow into the first magnetization free layer 30. As a result, in the first magnetization free layer 30, electrons having a spin angular momentum in the + z direction become majority, and magnetization reversal in the + z direction is induced. When the magnetization of the first magnetization free layer 30 is reversed in the + z direction, the magnetization of the second magnetization free layer 40 is rotated in the + x direction due to the magnetic coupling described above. That is, the “0” state shown in FIG. 11A is obtained.

In the example shown in FIG. 12A, the write current Iwrite flows from the first magnetoresistive element through the first conductive layer 70 to the second conductive layer 80. In the example shown in FIG. 12B, the write current Iwrite Iwrite flows from the second conductive layer 80 into the first magnetoresistive element via the first conductive layer 70. However, the method of flowing the write current Iwrite to the first magnetoresistance effect element is not limited to the example shown in FIGS. 12A and 12B. The write current Iwrite only has to flow bidirectionally between the first magnetization fixed layer 10 and the first magnetization free layer 30, and the current paths in other parts can be appropriately designed.

(Second modification)
Next, the configuration of the second modification of the magnetoresistive effect element in each MRAM according to the embodiment of the present invention will be described. FIG. 13 is a perspective view showing a configuration of a second modification of the magnetoresistive effect element in each MRAM according to the embodiment of the present invention. The magnetoresistive effect element 8b and the magnetoresistive effect element 9b according to the second modification of the embodiment of the present invention are formed on the same chip. In this modification, the configurations of the magnetoresistive effect element 8b for the MRAM 4 for high-speed operation and the magnetoresistive effect element 9b for the MRAM 5 for high integration and large capacity (low current) are respectively shown in FIG. Different from the magnetoresistive effect element 9.

The magnetoresistive effect element 8b is used in a memory cell of the MRAM 4 for high speed operation. This is a current-induced magnetic field writing type magnetoresistive effect element. The magnetoresistive effect element 8b includes a magnetization free layer 140, a magnetization fixed layer 160, a nonmagnetic layer 150 provided between the magnetization free layer 140 and the magnetization fixed layer 160, and the nonmagnetic layer 150 sandwiching the magnetization fixed layer 160. And a magnetization free layer 140a provided on the opposite side to the magnetization fixed layer 160 with the nonmagnetic layer 151 interposed therebetween. Although not shown, in addition to the above-described layers, it is desirable that an electrode layer, a diffusion prevention layer, a base layer, and the like are appropriately provided.

The magnetization free layer 140, the magnetization fixed layer 160, and the nonmagnetic layer 150 are the same as the magnetization free layer 140, the magnetization fixed layer 160, and the nonmagnetic layer 150 in FIG. However, the magnetoresistive effect element 8b differs from the magnetoresistive effect element 8 of FIG. 2 in that it includes a magnetization free layer 140a provided on the opposite side of the nonmagnetic layer 150 with the magnetization fixed layer 160 interposed therebetween.

The magnetization free layer 140a is preferably made of the same ferromagnetic material as the magnetization free layer 140, has the same in-plane magnetic anisotropy, and has a reversible magnetization in the reverse direction. The magnetization free layer 60a is antiferromagnetically magnetically coupled to the magnetization free layer 60 and stabilizes the magnetization of each other. The magnetization free layer 140a and the magnetization free layer 140 located on both sides of the magnetization fixed layer 160 have a function of amplifying a current-induced magnetic field generated by a write current flowing through the magnetization fixed layer 160 during a write operation. Yes. The nonmagnetic layer 151 has a function of cutting the magnetic coupling between the magnetization fixed layer 160 and the magnetization free layer 140a. The nonmagnetic layer 151 may be made of any material as long as it is a nonmagnetic material.
The other configuration is the same as that in the case of FIG.

Next, regarding the data writing method of the magnetoresistive effect element 8b of the present embodiment, the current induced magnetic field due to the write current flowing through the magnetization fixed layer 160 is amplified by the magnetization free layer 140a and the magnetization free layer 140, Except that the magnetization free layer 140a is magnetized in the opposite direction to the magnetization free layer 140 by the current-induced magnetic field, the description is omitted because it is the same as in FIG. Such a writing method in which a fixed magnetization layer 160 serving as a writing wiring layer is positioned between the magnetization free layer 140a and the magnetization free layer 140 and a writing current is passed therethrough can also be referred to as an intermediate wiring layer writing type.
The method for reading data from the magnetoresistive effect element 8b of the present embodiment is the same as in the case of FIG.

In FIG. 13, the magnetization free layer 140 and the magnetization free layer 140a are depicted as having substantially the same shape, but the shapes of the two layers may be different. For example, the magnetization free layer 140a may have the same shape as the magnetization fixed layer 160. In this case, the magnetization of the magnetization free layer 140a is oriented in the y direction, which is the longitudinal direction in a steady state, and rotates in the direction of the current-induced magnetic field when a current is introduced into the magnetization fixed layer 160. It is possible to efficiently apply a magnetic field. The magnetization free layer 140a having such a role is often referred to as a cladding layer or a yoke layer.

The magnetoresistive effect element 9b is used in a memory cell of the MRAM 5 for high integration and large capacity (low current). This is a spin-polarization current writing type spin-injection magnetization reversal type magnetoresistive effect element. The magnetoresistive effect element 9b includes a first magnetoresistive effect element for writing and a second magnetoresistive effect element for reading.

This magnetoresistive effect element 9b is the same as the magnetoresistive effect element 9 of FIG. However, it differs from the magnetoresistive element 9 of FIG. 2 in that the nonmagnetic layer 51 and the magnetic layer 41 are provided under the second magnetization fixed layer 60. However, the nonmagnetic layer 51 and the magnetic layer 41 do not have any influence on the element operation, and may be omitted.
Other configurations and operations are the same as in the case of FIG.

The magnetoresistive effect element 8b and the magnetoresistive effect element 9b according to the embodiment of the present invention are formed on the same chip. The magnetization free layer 140, the nonmagnetic layer 150, the magnetization fixed layer 160, and the magnetization free layer 140a of the magnetoresistive effect element 8b are respectively the second magnetization free layer 40, the second nonmagnetic layer 50, and the magnetoresistance effect element 9b. The second magnetization fixed layer 40 and the magnetic layer 41 are simultaneously formed of the same material in the same layer. That is, the MRAM 4 and the MRAM 5 can be formed by the same process, and the number of processes does not increase. As a result, the semiconductor device 1 can be manufactured at a low cost and in a short time.

(Third Modification)
Next, the configuration of a third modification of the magnetoresistive element in each MRAM according to the embodiment of the present invention will be described. The third modification relates to the positional relationship in the z-axis direction (stacking direction) of each layer constituting the magnetoresistive effect element 9c. The magnetoresistive effect element 9c is used in a memory cell of the MRAM 5 for high integration and large capacity (low current). This is a spin-polarization current writing type spin-injection magnetization reversal type magnetoresistive effect element.

As described above, the first magnetization fixed layer 10, the first nonmagnetic layer 20, and the first magnetization free layer 30 constitute a “write layer group”, and the second magnetization free layer 40 and the second nonmagnetic layer 50. The second magnetization fixed layer 60 constitutes a “read layer group”. The first conductive layer 70 and the second conductive layer 80 constitute a “plug group” that introduces a current into the write layer group and the read layer group. The positional relationship among the write layer group, the read layer group, and the plug group is not limited to that shown in the above example. The first magnetization free layer 30 of the write layer group and the second magnetization free layer 40 of the read layer group may be formed in different layers and magnetically coupled to each other.

FIG. 14A to FIG. 14C are schematic views schematically showing a configuration of a third modification of the magnetoresistive effect element according to the present example. Specifically, FIG. 14A is a perspective view, and FIGS. 14B and 14C are an xy plan view and an xz sectional view in the xyz coordinate system shown in FIG. 14A, respectively.

In the example shown in FIGS. 14A to 14C, the write layer group is provided above the read layer group. On the other hand, the second conductive layer 80 is provided on the writing layer group side (upper side) with respect to the first conductive layer 70. Also in this case, the first magnetization free layer 30 of the write layer group and the second magnetization free layer 40 of the read layer group are magnetically coupled to each other. Furthermore, the center of gravity G40 of the second magnetization free layer 40 is shifted from the center of gravity G30 of the first magnetization free layer 30 in the xy plane. Therefore, the magnetization direction of the second magnetization free layer 40 is uniquely determined by the leakage magnetic field that spreads radially from the first magnetization free layer 30.

As in the previous example, the write current Iwrite flows from the plug group to the write layer group or from the write layer group to the plug group. By changing the direction of the write current Iwrite, both “0” write and “1” write can be realized. Similarly to the above-described example, the read current Iread is introduced into the read layer group by using the plug group.

In addition to these, various positional relationships among the write layer group, the read layer group, and the plug group can be considered. However, in order to increase the strength of the magnetic coupling between the first magnetization free layer 30 and the second magnetization free layer 40, the distance between the first magnetization free layer 30 and the second magnetization free layer 40 is small. It is preferable. Therefore, as described above, the first magnetization fixed layer 10, the first nonmagnetic layer 20, the first magnetization free layer 30, the first conductive layer 70, the second magnetization free layer 40, the second nonmagnetic layer 50, and the second The magnetization fixed layer 60 is preferably laminated from the bottom or the top in this order. As will be described later, the first conductive layer 70 can be omitted.

In this modification, the semiconductor device 1 can be configured with the same combination as in FIG. 2 with respect to the magnetoresistive effect element 8 for the MRAM 4 in FIG. That is, the magnetoresistive effect element 9c and the magnetoresistive effect element 8 according to this modification can be formed on the same chip. The magnetization free layer 140, the nonmagnetic layer 150, and the magnetization fixed layer 160 of the magnetoresistive effect element 8 are the same as the second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed layer 60 of the magnetoresistive effect element 9c, respectively. The same layer and the same material are simultaneously formed. That is, the MRAM 4 and the MRAM 5 can be formed by the same process, and the number of processes does not increase. As a result, the semiconductor device 1 can be manufactured at a low cost and in a short time.

Similarly, also for the magnetoresistive effect element 8a for the MRAM 4 in FIG. 9, the semiconductor device 1 can be configured with the same combination as in FIG. That is, the magnetoresistive effect element 9c and the magnetoresistive effect element 8a according to the present modification can be formed on the same chip at the same time with the same material and the same layer. Similarly, also for the magnetoresistive effect element 8b for the MRAM 4 in FIG. 13, the semiconductor device 1 can be configured with the same combination as in FIG. That is, the magnetoresistive effect element 9c and the magnetoresistive effect element 8b according to this modification can be formed on the same chip at the same time with the same material and the same layer. Even in these cases, formation by the same process is possible.

(Fourth modification)
Next, the configuration of a fourth modification of the magnetoresistive element in each MRAM according to the embodiment of the present invention will be described. The fourth modification relates to the number of write layer groups constituting the magnetoresistive effect element 9d. The magnetoresistive effect element 9d is used in a memory cell of the MRAM 5 for high integration and large capacity (low current). This is a spin-polarization current writing type spin-injection magnetization reversal type magnetoresistive effect element.

The magnetoresistance effect element 9d according to the fourth modification includes a plurality of write layer groups. Each of the plurality of write layer groups includes the first magnetization fixed layer 10, the first nonmagnetic layer 20, and the first magnetization free layer 30 described above.

15A to 15C are schematic views schematically showing a configuration of a fourth modification of the magnetoresistive effect element according to the present example. Specifically, FIG. 15A is a perspective view showing an example of the structure of the magnetoresistive effect element 9d. 15B and 15C are respectively an xy plan view and an xz side view of the structure shown in FIG. 15A. In the example shown in FIGS. 15A to 15C, the magnetoresistive element 9d includes a first write layer group, a second write layer group, a first conductive layer 70, and a read layer group (40 to 60). Yes. The first write layer group includes a first magnetization fixed layer 10a, a first nonmagnetic layer 20a, and a first magnetization free layer 30a. The second write layer group includes a first magnetization fixed layer 10b, a first nonmagnetic layer 20b, and a first magnetization free layer 30b.

Preferably, the first magnetization fixed layer 10a and the first magnetization fixed layer 10b are formed in the same layer and have the same material, shape, and film thickness. The first nonmagnetic layer 20a and the first nonmagnetic layer 20b are formed in the same layer and have the same material, shape, and film thickness. The first magnetization free layer 30a and the first magnetization free layer 30b are formed in the same layer and have the same material, shape, and film thickness. By having the same layer, the same material, and the same film thickness, they can be formed by the same process. In the example shown in FIGS. 15A to 15C, both the first magnetization free layer 30a and the first magnetization free layer 30b are in contact with one surface of the first conductive layer 70, and the other surface has a second magnetization magnetization. The free layer 40 is in contact.

The first magnetization free layer 30a and the second magnetization free layer 40 are magnetically coupled to each other. In the xy plane, the center of gravity G40 of the second magnetization free layer 40 is shifted from the center of gravity G30a of the first magnetization free layer 30a. Therefore, the magnetization of the first magnetization free layer 30 a exerts a magnetic force in the in-plane direction on the second magnetization free layer 40. Similarly, the first magnetization free layer 30b and the second magnetization free layer 40 are magnetically coupled to each other. In the xy plane, the center of gravity G40 of the second magnetization free layer 40 is shifted from the center of gravity G30b of the first magnetization free layer 30b. Accordingly, the magnetization of the first magnetization free layer 30 b exerts a magnetic force in the in-plane direction on the second magnetization free layer 40.

Preferably, the centroid G40 of the second magnetization free layer 40 is located between the centroid G30a of the first magnetization free layer 30a and the centroid G30b of the first magnetization free layer 30b in the xy plane. In particular, it is preferable that the centroid G30a of the first magnetization free layer 30a, the centroid G40 of the second magnetization free layer 40, and the centroid G30b of the first magnetization free layer 30b are aligned on the xy plane. In the example shown in FIGS. 15A to 15C, the centroid G40 of the second magnetization free layer 40 is shifted in the + x direction from the centroid G30a of the first magnetization free layer 30a, and the centroid G30b of the first magnetization free layer 30b is The second magnetization free layer 40 is shifted from the center of gravity G40 in the + x direction.

16A and 16B each illustrate two memory states that the magnetoresistive effect element 9d shown in FIGS. 15A to 15C can take. In the example shown in FIGS. 16A and 16B, the magnetization directions of the first magnetization fixed

layers

10a and 10b are parallel to each other and fixed in the same + z direction. The magnetization direction of the second magnetization fixed layer 60 is fixed in the + x direction.

In FIG. 16A, the magnetization of the first magnetization free layer 30a faces the + z direction, while the magnetization of the first magnetization free layer 30b faces the -z direction. That is, the magnetization directions of the first magnetization

free layers

30a and 30b are substantially antiparallel to each other. In this case, both the leakage magnetic fields from the first magnetization

free layers

30a and 30b have a + x component at the position of the center of gravity G40 of the second magnetization free layer 40. This is because the center of gravity G40 of the second magnetization free layer 40 is located between the centers of gravity G30a and G30b of the first magnetization

free layers

30a and 30b. In other words, since the center of gravity G40 is located between the centers of gravity G30a and G30b and the magnetization directions of the first magnetization

free layers

30a and 30b are antiparallel, the magnetic force generated by the first magnetization

free layers

30a and 30b is reduced to the second magnetization free layer. It strengthens each other at 40 positions. The strengthening effect of magnetic force is maximized when the centers of gravity G30a, G40, and G30b are aligned. Thus, due to the magnetic coupling between the first magnetization

free layers

30a and 30b and the second magnetization free layer 40, the magnetization of the second magnetization free layer 40 has a component in the + x direction. At this time, the magnetization direction of the second magnetization free layer 40 has a component “parallel” to the magnetization direction of the second magnetization fixed layer 60, and the resistance value of the second magnetoresistive element is relatively small (“0”). Status).

On the other hand, in FIG. 16B, the magnetization of the first magnetization free layer 30a faces the −z direction, and the magnetization of the first magnetization free layer 30b faces the + z direction. In this case, both the leakage magnetic fields from the first magnetization

free layers

30 a and 30 b have a −x component at the position of the center of gravity G 40 of the second magnetization free layer 40. As a result, the magnetization of the second magnetization free layer 40 has a component in the −x direction. At this time, the magnetization direction of the second magnetization free layer 40 has a component “antiparallel” to the magnetization direction of the second magnetization fixed layer 60, and the resistance value of the second magnetoresistance effect element is relatively large (“1”). "Status).

When reversing the magnetization direction of one of the first magnetization

free layers

30a and 30b, it is necessary to simultaneously reverse the other magnetization direction. Therefore, at the time of data writing, the write current Iwrite flows between the first magnetization fixed layer 10 and the first magnetization free layer 30 in each of the write layer groups. The direction of the write current Iwrite in each write layer group is appropriately set so that the magnetization of each first magnetization free layer 30 is reversed.

FIG. 17A shows an example of the write current Iwrite in the fourth modification. As described above, the magnetization directions of the first magnetization fixed

layers

10a and 10b are parallel to each other, and the magnetization directions of the first magnetization

free layers

30a and 30b are antiparallel to each other. Therefore, the direction of the write current Iwrite flowing between the first magnetization fixed layer 10a and the first magnetization free layer 30a of the first write layer group is the same as that of the first magnetization fixed layer 10b and the first magnetization fixed layer 10b of the second write layer group. It is set opposite to the direction of the write current Iwrite flowing between the magnetization free layer 30b. That is, when the write current Iwrite flows from the first magnetization fixed layer 10 to the first magnetization free layer 30 in one write layer group, the write current Iwrite is transferred from the first magnetization free layer 30 to the first magnetization free layer 30 in the other write layer group. 1 flows to the magnetization fixed layer 10. As a result, both antiparallel magnetizations of the first magnetization

free layers

30a and 30b are reversed. In the example shown in FIG. 17A, the write current Iwrite is passed between the first write layer group and the second write layer group via the first conductive layer 70, and the direction of the write current Iwrite is changed. Thus, both “0” writing and “1” writing can be realized. However, the method for introducing the write current Iwrite is not limited thereto.

At the time of data reading, a read current Iread flows between the second magnetization free layer 40 and the second magnetization fixed layer 60 of the read layer group. The method of introducing the read current Iread into the read layer group can be designed as appropriate. FIG. 17B shows an example of a method for introducing the read current Iread in the fourth modification. In the example shown in FIG. 17B, the read current Iread is introduced via the second write layer group. The read current Iread may pass through the first write layer group, or may pass through both the first write layer group and the second write layer group.

The fourth modification can be combined with the previous modification. Moreover, according to the 4th modification, the following effect is acquired additionally. First, the read signal further increases. In this modification, two or more first magnetization free layers 30 that are sources of leakage magnetic fields that contribute to the rotation of magnetization of the second magnetization free layer 40 are provided. Therefore, the magnitude of the magnetic field acting on the second magnetization free layer 40 is more than twice, and the magnetization of the second magnetization free layer 40 rotates more greatly. As a result, a large magnetoresistive effect is exhibited, and a large read signal is obtained.

Also, the manufacturing process is simplified. That is, according to this modification, the first writing layer group and the second writing layer group can be manufactured in the same process. Therefore, the number of manufacturing processes is reduced, and the manufacturing cost is reduced.

In this modification, the magnetization free layer 140, the nonmagnetic layer 150, and the magnetization fixed layer 160 of the magnetoresistive effect element 8 for the MRAM 4 in FIG. 2 are replaced with the second magnetization free layer 40 and the second nonmagnetic layer 50 of the readout layer group. In addition, the second magnetization fixed layer 60 and the second magnetization fixed layer 60 can be simultaneously formed using the same material. In that case, the MRAM 4 and the MRAM 5 can be formed by the same process, and the number of processes does not increase. As a result, the semiconductor device 1 can be manufactured at a low cost and in a short time.

Similarly, the semiconductor device 1 can be configured with the same combination as in FIG. 9 with respect to the magnetoresistive effect element 8a for the MRAM 4 in FIG. That is, the magnetoresistive effect element 9d and the magnetoresistive effect element 8a according to this modification can be formed on the same chip at the same time with the same material and the same layer. Similarly, also for the magnetoresistive effect element 8b for the MRAM 4 in FIG. 13, the semiconductor device 1 can be configured with the same combination as in FIG. That is, the magnetoresistive effect element 9d and the magnetoresistive effect element 8b according to this modification can be formed on the same chip at the same time with the same material and the same layer. Even in these cases, formation by the same process is possible.

(5th modification)
Next, the configuration of the fifth modification example of the magnetoresistive effect element in each MRAM according to the embodiment of the present invention will be described. The fifth modification relates to the positional relationship in the xy plane between the first magnetization free layer 30 and the second magnetization free layer 40 constituting the magnetoresistive effect element 9e. The magnetoresistive effect element 9d is used in a memory cell of the MRAM 5 for high integration and large capacity (low current). This is a spin-polarization current writing type spin-injection magnetization reversal type magnetoresistive effect element.

In the magnetoresistive effect element 9e according to the fifth modification, the positional relationship between the first magnetization free layer 30 and the second magnetization free layer 40 is not limited to the above-described example. In the xy plane, the center of gravity G40 of the second magnetization free layer 40 only needs to be positioned in the “first direction” with respect to the center of gravity G30 of the first magnetization free layer 30.

18A to 18D are schematic views schematically showing the configuration of a fifth modification of the magnetoresistive effect element according to this example. Specifically, FIG. 18A is a perspective view showing an example of the structure of the magnetoresistive effect element 9e. 18B, 18C, and 18D are respectively an xy plan view, an xz sectional view, and a yz sectional view of the structure shown in FIG. 18A. In the example shown by the magnetoresistive effect element 9e, the shift direction (first direction) between the first magnetization free layer 30 and the second magnetization free layer 40 in the xy plane is different from the longitudinal direction of the first conductive layer 70. Yes. Specifically, the longitudinal direction of the first conductive layer 70 is the x-axis direction, and the first direction is a y-axis direction different from the x-axis direction. That is, in the xy plane, the center G40 of the second magnetization free layer 40 is shifted from the center G30 of the first magnetization free layer 30 in the y-axis direction. Therefore, the magnetization direction of the second magnetization free layer 40 is uniquely determined by the leakage magnetic field that spreads radially from the first magnetization free layer 30. In this case, the magnetization direction of the second magnetization free layer 40 has a component in the + y direction or the −y direction depending on the magnetization direction of the first magnetization free layer 30. The magnetization direction of the second magnetization fixed layer 60 is preferably fixed in either the + y direction or the −y direction.

In this modification, the magnetization free layer 140, the nonmagnetic layer 150, and the magnetization fixed layer 160 of the magnetoresistive effect element 8 for the MRAM 4 in FIG. 2 are replaced with the second magnetization free layer 40 of the readout layer group of the magnetoresistive effect element 9e, The second nonmagnetic layer 50 and the second magnetization fixed layer 60 can be simultaneously formed of the same material in the same layer. In that case, the MRAM 4 and the MRAM 5 can be formed by the same process, and the number of processes does not increase. As a result, the semiconductor device 1 can be manufactured at a low cost and in a short time.

Similarly, the semiconductor device 1 can be configured with the same combination as in FIG. 9 with respect to the magnetoresistive effect element 8a for the MRAM 4 in FIG. That is, the magnetoresistive effect element 9e and the magnetoresistive effect element 8a according to the present modification can be formed on the same chip at the same time using the same material with the same layers. Similarly, also for the magnetoresistive effect element 8b for the MRAM 4 in FIG. 13, the semiconductor device 1 can be configured with the same combination as in FIG. That is, the magnetoresistive effect element 9e and the magnetoresistive effect element 8a according to the present modification can be formed on the same chip at the same time using the same material with the same layers. Even in these cases, formation by the same process is possible.

(Sixth Modification)
Next, the configuration of a sixth modification of the magnetoresistive element in each MRAM according to the embodiment of the present invention will be described. In the sixth modification, the second conductive layer 80 constituting the magnetoresistive effect element 9f is omitted. The magnetoresistive effect element 9d is used in a memory cell of the MRAM 5 (desirably, the write current is 0.5 mA or less) for high integration and large capacity (low current). This is a spin-polarization current writing type spin-injection magnetization reversal type magnetoresistive effect element.

FIGS. 19A to 19C are schematic views schematically showing the configuration of a sixth modification of the magnetoresistive effect element according to this example. Specifically, FIG. 19A is a perspective view showing an example of the structure of the magnetoresistive element 9f. 19B and 19C are respectively an xy plan view and an xz side view of the structure shown in FIG. 19A. As shown in FIGS. 19A to 19C, the second conductive layer 80 is omitted, and the magnetoresistive effect element 9f is a two-terminal element. Even in this case, the first magnetization free layer 30 and the second magnetization free layer 40 are magnetically coupled, and the center G40 of the second magnetization free layer 40 is shifted from the center G30 of the first magnetization free layer 30. ing. Therefore, the magnetization direction of the second magnetization free layer 40 is uniquely determined according to the magnetization direction of the first magnetization free layer 30.

20A and 20B show paths of the write current Iwrite and the read current Iread in the present modification, respectively. Since the magnetoresistive effect element 9f according to this modification is a two-terminal element, the write current Iwrite introduced into the write layer group at the time of data writing also flows through the read layer group. Further, the read current Iread introduced into the read layer group at the time of data reading also flows through the write layer group. That is, the path of the write current Iwrite and the path of the read current Iread are the same.

Therefore, it is necessary to prevent the spin injection magnetization reversal from occurring in the first magnetization free layer 30 due to the read current Iread when reading data. Therefore, the read current Iread is set small. Further, it is necessary to prevent the spin injection magnetization reversal from occurring in the second magnetization free layer 40 due to the write current Iwrite during data writing. For this purpose, it is desirable to make the current density of the write current Iwrite flowing through the read layer group (40, 50, 60) smaller than the current density of the write current Iwrite flowing through the write layer group (10, 20, 30). For example, the area of the read layer group in the xy plane is designed to be larger than the area of the write layer group in the xy plane.

According to the sixth modification, since the magnetoresistive effect element 9f is a two-terminal element, it is preferable to provide one transistor per memory cell. A transistor may be connected to either the first magnetization fixed layer 10 or the second magnetization fixed layer 60. For example, the transistor M2 and the bit line BL2 can be omitted from the circuit configuration shown in FIG. 7A. As a result, the area of the magnetic memory cell is reduced. The sixth modification can be combined with other modifications.

In this modification, the semiconductor device 1 can be configured with the same combination as in FIG. 2 with respect to the magnetoresistive effect element 8 for the MRAM 4 in FIG. That is, according to this modification, the magnetoresistive effect element 9f and the magnetoresistive effect element 8 are formed on the same chip. The magnetization free layer 140, the nonmagnetic layer 150, and the magnetization fixed layer 160 of the magnetoresistive effect element 8 are the same as the second magnetization free layer 40, the second nonmagnetic layer 50, and the second magnetization fixed layer 60 of the magnetoresistive effect element 9f, respectively. The same layer and the same material are simultaneously formed. That is, the MRAM 4 and the MRAM 5 can be formed by the same process, and the number of processes does not increase. As a result, the semiconductor device 1 can be manufactured at a low cost and in a short time.

Similarly, the semiconductor device 1 can be configured with the same combination as in FIG. 9 with respect to the magnetoresistive effect element 8a for the MRAM 4 in FIG. That is, the magnetoresistive effect element 9f and the magnetoresistive effect element 8a according to the present modification can be formed on the same chip at the same time with the same material and the same layer. Similarly, also for the magnetoresistive effect element 8b for the MRAM 4 in FIG. 13, the semiconductor device 1 can be configured with the same combination as in FIG. That is, the magnetoresistive effect element 9f and the magnetoresistive effect element 8b according to the present modification can be formed on the same chip at the same time using the same material and the same layers. Even in these cases, formation by the same process is possible.

Other than the modifications described so far, various modifications can be considered. For example, a material having a heat generation effect may be inserted into the write current path. In this case, the temperature of the element rises due to heat generation, and a heat-assisted recording effect can be obtained at the time of data writing. Further, a magnetic field induced by arranging a wiring in the vicinity of the magnetoresistive effect element and passing a current through the wiring may be used as an assist magnetic field at the time of spin injection magnetization reversal.

In addition, although the Example of this invention and its various modifications are described above, this invention should not be limited to the above-mentioned Example and modification. Those skilled in the art will readily understand that a plurality of the above-described modified examples can be applied in combination as long as there is no contradiction.

Although the present invention has been described above with reference to the embodiment, the present invention is not limited to the above embodiment. Various changes that can be understood by those skilled in the art can be made to the configuration and details of the present invention within the scope of the present invention.

The semiconductor device of the present invention can achieve both high-speed processing and large-capacity processing in the internal memory as a memory-embedded semiconductor device.

This application is based on Japanese Patent Application No. 2008-058494 filed on Mar. 7, 2008, claiming the benefit of priority from that application, the disclosure of that application should be cited Is incorporated here as it is.

Claims

A first magnetic random access memory having first memory cells;
A second magnetic random access memory having a second memory cell operating at a higher speed than the first memory cell, and provided in the same chip as the first magnetic random access memory;
The first memory cell includes
A first magnetization fixed layer having a fixed magnetization direction;
A first magnetization free layer whose magnetization direction is reversible;
A first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer;
A second magnetization fixed layer having a fixed magnetization direction;
A second magnetization free layer whose magnetization direction is reversible;
A second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer,
The first magnetization fixed layer and the first magnetization free layer are made of a ferromagnetic material and have perpendicular magnetic anisotropy,
The second magnetization fixed layer and the second magnetization free layer are made of a ferromagnetic material and have in-plane magnetic anisotropy,
The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other;
In the first plane parallel to each layer, the center of gravity of the second magnetization free layer is shifted from the center of gravity of the first magnetization free layer;
The magnetization direction of the second magnetization fixed layer is substantially parallel or substantially anti-parallel to the direction of displacement of the center of gravity between the first magnetization free layer and the second magnetization free layer,
The second memory cell includes
A third magnetization free layer;
A third magnetization fixed layer;
A third nonmagnetic layer provided between the third magnetization free layer and the third magnetization fixed layer;
The third magnetization free layer and the third magnetization fixed layer are made of a ferromagnetic material.
A semiconductor device according to claim 1,
The third magnetization free layer and the third magnetization fixed layer have in-plane magnetic anisotropy,
The second magnetization free layer and the third magnetization free layer are provided in the same layer,
The second magnetization fixed layer and the third magnetization fixed layer are provided in different same layers.
A semiconductor device according to claim 2,
In the first memory cell, a write current flows between the first magnetization free layer and the first magnetization fixed layer, and a read current flows between the second magnetization free layer and the second magnetization fixed layer. A semiconductor device that is swept away.
A semiconductor device according to any one of claims 1 to 3,
In the second memory cell, a write current flows through the third magnetization fixed layer.
A semiconductor device according to any one of claims 1 to 3,
The second memory cell further includes a write wiring provided in the vicinity of the third magnetization free layer and through which a write current flows.
A semiconductor device according to any one of claims 1 to 3,
The second memory cell further includes a fourth magnetization free layer that is provided on the opposite side of the second nonmagnetic layer with the third magnetization fixed layer interposed therebetween, and is made of a ferromagnetic material. A semiconductor device in which a write current flows in a layer.
A semiconductor device according to any one of claims 1 to 6,
In the first memory cell, the area of the first magnetization fixed layer is larger than the area of the first magnetization free layer in the first plane.
A semiconductor device according to any one of claims 1 to 7,
In the first memory cell, the area of the second magnetization fixed layer is smaller than the area of the second magnetization free layer in the first plane.
A semiconductor device according to any one of claims 1 to 8,
The first memory cell further includes a first conductive layer sandwiched between the first magnetization free layer and the second magnetization free layer.
A semiconductor device according to claim 9,
In the first memory cell, the first conductive layer is formed of a magnetic material. Semiconductor device.
A semiconductor device according to any one of claims 1 to 8,
In the first memory cell, the second magnetization free layer is in contact with one surface of the first magnetization free layer.
A semiconductor device according to claim 11,
The first memory cell further includes a second conductive layer electrically connected to the second magnetization free layer. Semiconductor device.
A semiconductor device according to any one of claims 1 to 11,
In the first memory cell, a write current flows between the first magnetization free layer and the first magnetization fixed layer, and further flows between the second magnetization free layer and the second magnetization fixed layer. Semiconductor device.
A semiconductor device according to claim 13,
In the first memory cell, a current density of the write current flowing between the second magnetization free layer and the second magnetization fixed layer is between the first magnetization free layer and the first magnetization fixed layer. A semiconductor device smaller than a current density of the flowing write current.
A semiconductor device according to any one of claims 1 to 11,
The first memory cell includes a plurality of write layer groups,
Each of the plurality of write layer groups includes the first magnetization fixed layer, the first magnetization free layer, and the first nonmagnetic layer.
A semiconductor device according to claim 15,
In the first memory cell, the plurality of write layer groups include a first write layer group and a second write layer group,
In the first plane, the center of gravity of the second magnetization free layer is between the center of gravity of the first magnetization free layer of the first writing layer group and the center of gravity of the first magnetization free layer of the second writing layer group. Located in the semiconductor device.
A semiconductor device according to claim 16, comprising:
The first memory cell includes, in the first plane, a center of gravity of the first magnetization free layer of the first write layer group, a center of gravity of the second magnetization free layer, and the first of the second write layer group. A semiconductor device in which the center of gravity of the magnetization free layer is aligned.
A semiconductor device according to claim 16 or 17,
In the first memory cell, the magnetization direction of the first magnetization free layer of the first write layer group is antiparallel to the magnetization direction of the first magnetization free layer of the second write layer group.
A semiconductor device according to claim 18,
In the first memory cell, the magnetization direction of the first magnetization fixed layer of the first write layer group is parallel to the magnetization direction of the first magnetization fixed layer of the second write layer group.
A semiconductor device according to claim 19, wherein
In the first memory cell, a write current is passed between the first magnetization free layer and the first magnetization fixed layer in each of the first write layer group and the second write layer group,
The direction of the write current flowing through the first write layer group is opposite to the direction of the write current flowing through the second write layer group.
A semiconductor device according to any one of claims 1 to 20,
In the first memory cell, the second nonmagnetic layer contains Mg—O. Semiconductor device
A semiconductor device according to any one of claims 1 to 21,
In the first memory cell, at least one of the second magnetization free layer and the second magnetization fixed layer contains Co—Fe—B.