JP2011091342A - Magnetoresistive element and magnetic domain wall random access memory - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a magnetoresistive element which uses a magnetization recording layer and a magnetization free layer both having vertical magnetic anisotropy and has a configuration that can obtain a high MR ratio at a high yield without increasing an element area. <P>SOLUTION: The magnetic memory element comprises a magnetization recording layer 10 and a magnetic reading layer 50. The magnetization recording layer 10 is a ferromagnetic layer having vertical magnetic anisotropy, and stores information as a magnetization direction. The magnetic reading layer 50 has a magnetic tunnel junction which includes ferromagnetic layers having in-plane magnetic anisotropy. The magnetization recording layer 10 and the magnetic reading layer 50 are arranged in mutually nonparallel planes, respectively. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a magnetoresistive element and an MRAM (magnetic random access memory) using the magnetoresistive element for a memory cell.

  MRAM is a promising nonvolatile memory from the viewpoint of high integration and high-speed operation. In the MRAM, a magnetoresistive element exhibiting a “magnetoresistance effect” such as a TMR (Tunnel MagnetoResistance) effect is used. In the magnetoresistive element, for example, a magnetic tunnel junction (MTJ: Magnetic Tunnel Junction) in which a tunnel barrier layer is sandwiched between two ferromagnetic layers is formed. One of the two ferromagnetic layers is a magnetization fixed layer (pinned layer) whose magnetization direction is fixed, and the other one is a magnetization free layer (free layer) whose magnetization direction can be reversed. ).

  The resistance value (R + ΔR) of the MTJ when the magnetization directions of the pinned layer and the free layer are “anti-parallel” is larger than the resistance value (R) when they are “parallel” due to the magnetoresistance effect. It is known. The MRAM uses the magnetoresistive element having the MTJ as a memory cell, and stores data in a nonvolatile manner by utilizing the change in the resistance value. For example, the antiparallel state is associated with data “1”, and the parallel state is associated with data “0”. Data is written to the memory cell by reversing the magnetization direction of the magnetization free layer.

The most traditional method of writing data to the MRAM is a method of reversing the magnetization of the magnetization free layer by a current magnetic field. However, in this writing method, the reversal magnetic field necessary for reversing the magnetization of the magnetization free layer becomes substantially inversely proportional to the memory cell size. That is, as the memory cell is miniaturized, the write current increases. This is not preferable in providing a highly integrated MRAM.
A “spin transfer method” has been proposed as a write method capable of suppressing an increase in write current accompanying miniaturization (for example, Japanese Patent Application Laid-Open No. 2005-93488). In the spin injection method, a spin-polarized current is injected into a ferromagnetic conductor, and the magnetization is reversed by a direct interaction between the spin of a conduction electron carrying the current and the magnetic moment of the conductor. This phenomenon is referred to as “Spin Transfer Magnetization Switching”. Writing by the spin injection method is suitable for realizing a highly integrated MRAM because the write current decreases as the size of the magnetization free layer decreases.

  Patent Document 2 (US Pat. No. 6,834,005) discloses a magnetic shift register using spin injection. The magnetic shift register stores information using a domain wall in a magnetic material. In a magnetic material divided into a number of regions (magnetic domains) by constriction or the like, a current is injected so as to pass through the domain wall, and the domain wall is moved by the current. The magnetization direction of each region is treated as recorded data. Such a magnetic shift register is used, for example, for recording a large amount of serial data.

  “Domain wall motion type MRAM” using such domain wall motion by spin injection is described in Patent Document 3 (Japanese Patent Laid-Open No. 2005-191032). The MRAM described in Patent Document 3 includes a magnetization fixed layer in which magnetization is fixed, a tunnel insulating layer stacked on the magnetization fixed layer, and a magnetization recording layer stacked on the tunnel insulating layer. Since the magnetization recording layer includes a portion where the magnetization direction can be reversed and a portion where the magnetization direction is not substantially changed, it is referred to as a magnetization recording layer, not a magnetization free layer.

  FIG. 1 shows the structure of the magnetization recording layer of Japanese Patent Application Laid-Open No. 2005-191032. In FIG. 1, the magnetization recording layer 100 has a linear shape. Specifically, the magnetization recording layer 100 includes a junction 103 that overlaps the tunnel insulating layer and the magnetization fixed layer, a constriction 104 adjacent to both ends of the junction 103, and a pair of magnetization fixed units formed adjacent to the constriction 104. 101, 102. The pair of magnetization fixed portions 101 and 102 are provided with fixed magnetizations in opposite directions. The magnetization of these magnetization fixed portions is fixed by an exchange bias magnetic field formed by laminating an antiferromagnetic layer, for example. The MRAM further includes a pair of write terminals 105 and 106 that are electrically connected to the pair of magnetization fixed portions 101 and 102. The write terminals 105 and 106 allow a write current to pass through the junction portion 103, the pair of constricted portions 104, and the pair of magnetization fixed portions 101 and 102 of the magnetization recording layer 100. The constricted portion 104 serves as a pin potential with respect to the domain wall, and information is held depending on which of the constricted portions the domain wall is present on the left or right side or the magnetization direction of the joint portion 103. The direction of the domain wall movement is controlled by the direction of the write current.

  In these spin-injection-based devices, it is possible to use a material having perpendicular magnetic anisotropy as the magnetization free layer or the magnetization recording layer (Patent Documents 4 and 5 (WO2009 / 001706, US Pat. No. 6,967,863)). Gazette).

  FIG. 2 shows the structure of the MRAM described in WO2009 / 001706. In FIG. 2, the magnetization of the magnetization recording layer 10 is oriented in a direction perpendicular to the wafer plane. Further, the hard magnetic layers 9a and 9b provided adjacent to the magnetization recording layer and forming the magnetization fixed portions 11a and 11b also have a perpendicular magnetization direction. Further, the magnetization fixed layer 30 stacked on the magnetization recording layer 10 via the tunnel insulating layer 32 also has a perpendicular magnetization direction. Therefore, in FIG. 2, information is read out by the MTJ having perpendicular magnetic anisotropy. The advantage of using a material having perpendicular magnetic anisotropy for the magnetic recording layer is that the threshold current for moving the domain wall can be reduced.

  FIG. 3 is a perspective view showing an example of a spin injection element using a perpendicular magnetic anisotropic material. In FIG. 3, a magnetization free layer 52 having perpendicular magnetic anisotropy, a tunnel insulating layer 32, and a magnetization fixed layer 30 are sequentially stacked. As the magnetization fixed layer 30, a laminated ferrimagnetic structure composed of a first ferromagnetic layer 34, a nonmagnetic layer 31, and a second ferromagnetic layer 33 is used. In the spin injection element, the magnetization direction of the magnetization free layer 52 can be reversed by applying a current perpendicular to the stacking direction, that is, between the current terminals 84a and 84b. It is known that the threshold current at this time is smaller than in the case of in-plane magnetic anisotropy. Information is read out as a resistance change of the MTJ having perpendicular magnetic anisotropy, as in the case of FIG.

  Increasing the MR ratio of the MTJ is effective for reading information at a high speed and with a high yield. In MTJ having in-plane magnetic anisotropy, for example, Patent Document 6 (Japanese Patent Laid-Open No. 2006-080116) discloses that a high MR ratio can be obtained by using CoFeB for the magnetic layer and MgO for the tunnel insulating layer. It is disclosed. However, there have been few reports on a configuration for obtaining a high MR ratio in an MTJ having perpendicular magnetic anisotropy. Patent Document 7 discloses an MRAM that combines a magnetic recording layer having perpendicular magnetic anisotropy with a small write current threshold, or an MTJ with in-plane anisotropy with a large MR ratio and a magnetic free layer. 8 (WO2009 / 019947, WO2009 / 060749).

  FIG. 4 shows a configuration of a domain wall motion type MRAM in which a magnetization recording layer having perpendicular magnetic anisotropy and an MTJ having in-plane anisotropy disclosed in WO2009 / 060749 are combined. The memory cell includes a magnetization recording layer 10 and a magnetic read layer 50. In the magnetic read layer 50, an MTJ having in-plane anisotropy (hereinafter also referred to as an in-plane MTJ) includes a magnetic sense layer 45, a tunnel insulating layer 42, and a magnetization fixed layer 40. The magnetic recording layer 10 is disposed at a position shifted in the Y direction. Here, the magnetizations of the two magnetic layers 43 and 44 coupled via the nonmagnetic layer 41 constituting the magnetization fixed layer 40 are substantially fixed and are not affected by the magnetization direction of the magnetization recording layer 10. On the other hand, the magnetization direction of the magnetic sensing layer 45 changes due to the change of the leakage magnetic field direction accompanying the reversal of the magnetization of the magnetization recording layer 10. Therefore, it is possible to obtain an MRAM having both a low write current by using the perpendicular magnetic anisotropy and a high MR ratio by using the in-plane MTJ.

  As a related technique, Japanese Patent Application Laid-Open No. 2008-147488 discloses a magnetoresistive effect element and an MRAM. This magnetoresistive effect element includes at least two first magnetization fixed layers whose magnetization directions are fixed, a magnetization free layer formed on a first plane and having a variable magnetization direction, and the magnetization via a nonmagnetic layer. A second magnetization fixed layer connected to the free layer and having a fixed magnetization direction. The two first magnetization fixed layers are disposed so as to face the second magnetization fixed layer with the magnetization free layer interposed therebetween, and are magnetically coupled to the magnetization free layer. The magnetizations of the two first magnetization fixed layers both have a component in a first direction perpendicular to the first plane. At the time of data writing, a write current is passed from one end of the magnetization free layer to the other end in the first plane.

  Japanese Unexamined Patent Application Publication No. 2009-54715 discloses a domain wall random access memory. The magnetic random access memory includes a magnetization recording layer that is a ferromagnetic layer having magnetic anisotropy, and a reading layer for reading information provided on the magnetization recording layer. The magnetization recording layer is connected to a boundary between the first magnetization switching region and a magnetization switching region including a first magnetization switching region having a reversible magnetization and a second magnetization switching region, and a magnetization direction is fixed. And a second magnetization fixed region connected to a boundary between the first magnetization fixed region and the second magnetization switching region and having a fixed magnetization direction.

Japanese Patent Laid-Open No. 2005-93488 US Pat. No. 6,834,005 JP 2005-191032 A WO2009 / 001706 Publication US Pat. No. 6,967,863 JP 2006-080116 A WO2009 / 0199947 WO2009 / 060749 JP 2008-147488 A JP 2009-54715 A

  In the memory cell shown in FIG. 4, in order to take out the magnetization change of the magnetization recording layer having perpendicular magnetic anisotropy as the magnetization change of the magnetic sense layer, the in-plane MTJ is arranged so as to be shifted from the magnetization recording layer. It is necessary to use the leakage magnetic field from the part. However, when this shift amount changes, the amount of leakage magnetic flux applied to the magnetic sensing layer changes, which causes a problem that the resistance value varies. There is also a problem that the area of the MRAM element is increased by the amount of shifting the in-plane MTJ. Further, when the in-plane MTJ is arranged on the upper part of the magnetic recording layer as shown in FIG. 4 and the flattening process after the processing of the magnetic recording layer is not performed strictly, there is a problem that the MTJ has a resistance defect due to a step. there were.

  Accordingly, an object of the present invention is to provide a configuration capable of realizing a high MR ratio with a high yield without increasing the element area in a magnetoresistive element using a perpendicularly anisotropic magnetization recording layer and magnetization free layer. That is.

  The magnetic memory element of the present invention includes a magnetization recording layer and a magnetic read layer. The magnetization recording layer is a ferromagnetic layer having perpendicular magnetic anisotropy and stores information as the magnetization direction. The magnetic read layer has a magnetic tunnel junction including a ferromagnetic layer having in-plane magnetic anisotropy. The magnetization recording layer and the magnetic reading layer are arranged on planes that are not parallel to each other.

  The magnetic random access memory according to the present invention includes a plurality of magnetic memory elements and a control circuit. The plurality of magnetic memory elements are arranged in a matrix and are described above. The control circuit controls a write operation and a read operation of the plurality of magnetic memory elements.

  According to the present invention, in a magnetoresistive element using a magnetization recording layer and a magnetization free layer having perpendicular anisotropy, it is possible to provide a configuration capable of realizing a high MR ratio with a high yield without increasing the element area. it can.

FIG. 1 shows the structure of a magnetization recording layer disclosed in Japanese Patent Application Laid-Open No. 2005-191032. FIG. 2 shows the structure of the MRAM described in WO2009 / 001706. FIG. 3 is a perspective view showing an example of a spin injection element using a perpendicular magnetic anisotropic material. FIG. 4 shows a configuration of a domain wall motion type MRAM in which a magnetization recording layer having perpendicular magnetic anisotropy and an MTJ having in-plane anisotropy disclosed in WO2009 / 060749 are combined. FIG. 5 shows an example of a perspective view of the magnetic memory element (magnetoresistance element) according to the first exemplary embodiment of the present invention. FIG. 6 schematically shows the leakage magnetic flux from the magnetization recording layer in FIG. FIG. 7 shows a first modification of the magnetic memory element according to the first embodiment of the present invention. FIG. 8 shows a second modification of the magnetic memory element according to the first embodiment of the present invention. FIG. 9 shows a data write principle for the magnetic memory element according to the first embodiment of the present invention. FIG. 10 is a conceptual diagram showing a configuration of the MRAM according to the embodiment of the present invention. FIG. 11 shows an example of a perspective view of a magnetic memory element (magnetoresistance element) according to the second exemplary embodiment of the present invention. FIG. 12 shows a modified example of the magnetic memory element according to the second embodiment of the present invention. FIG. 13 shows a reference technique related to the present invention.

  Embodiments of a magnetoresistive element, domain wall random access memory, and initialization method thereof according to the present invention will be described below with reference to the accompanying drawings. The present invention can be applied to both the case where the principle is domain wall movement by spin torque and the case where the principle is spin injection. However, in the first embodiment, the case where domain wall movement is the principle will be described below. In the second embodiment, a case where the principle is spin injection will be described.

(First embodiment)
First, the magnetic memory element 1 (magnetoresistance element) according to the first embodiment of the present invention will be described.

1. Structure of Magnetoresistive Element FIG. 5 shows an example of a perspective view of the magnetic memory element 1 (magnetoresistance element) according to the first exemplary embodiment of the present invention. The magnetic memory element 1 includes a magnetization recording layer 10 that is a ferromagnetic layer and a magnetic read layer 50. A separation layer 46 is disposed between the magnetic recording layer 10 and the magnetic read layer 50. The magnetization recording layer 10 is provided with current terminals 14a and 14b. The magnetic read layer 50 is connected to a current terminal 14c for drawing current.

  The magnetization recording layer 10 is a ferromagnetic layer having anisotropy (perpendicular magnetic anisotropy) in a direction perpendicular to the substrate surface. The magnetization recording layer 10 includes at least one material of Fe, Co, and Ni. Further, the perpendicular magnetic anisotropy can be stabilized when the magnetic recording layer 10 contains Pt or Pd. In addition to this, the magnetic recording layer 10 has B, C, N, O, Al, Si, P, Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, Mo, Tc, Ru, Rh, Ag, By adding Hf, Ta, W, Re, Os, Ir, Au, and Sm, adjustment can be made so that desired magnetic properties are expressed. Specifically, the material of the magnetic recording layer 10 includes Co, Co—Pt, Co—Pd, Co—Cr, Co—Pt—Cr, Co—Cr—Ta, Co—Cr—B, and Co—Cr—. Pt-B, Co-Cr-Ta-B, Co-V, Co-Mo, Co-W, Co-Ti, Co-Ru, Co-Rh, Fe-Pt, Fe-Pd, Fe-Co-Pt, Fe-Co-Pd, Sm-Co, etc. are mentioned. In addition, a laminated body in which a layer containing at least one material of Fe, Co, and Ni is laminated with different layers can be used as the magnetization recording layer 10 that exhibits magnetic anisotropy in the perpendicular direction. . Specifically, a laminate of Co film and Pd film, a laminate of Co film and Pt film, a laminate of Co film and Ni film, a laminate of Fe film and Au film can be used as the magnetic recording layer 10. It is.

  As shown in FIG. 5, the magnetization recording layer 10 includes a first magnetization fixed region 11 a, a second magnetization fixed region 11 b, and a magnetization switching region 13. In the present embodiment, magnetization hard layers 9a and 9b are provided below the first magnetization fixed region 11a and the second magnetization fixed region. Due to the magnetic coupling with these magnetization hard layers 9a and 9b, the magnetizations of the first and second magnetization fixed regions 11a and 11b are fixed in antiparallel directions. Note that “magnetization is fixed” means that the magnetization direction does not change before and after the write operation. Even if the magnetization direction of a part of the magnetization fixed region changes during the write operation, it returns to the original state after the write operation is completed. In order to realize this antiparallel magnetization arrangement, the magnetization hard layers 9a and 9b desirably have different magnetic characteristics.

  On the other hand, the magnetization direction of the magnetization switching region 13 can be reversed and is the + Z direction or the −Z direction. When the magnetization direction of the magnetization switching region 13 is the + Z direction as shown in FIG. 5, the first magnetization fixed region 11a forms one magnetic domain, and the magnetization switching region 13 and the second magnetization fixed region 11b are Form another magnetic domain. That is, a domain wall 12 is formed between the first magnetization fixed region 11 a and the magnetization switching region 13. On the other hand, when the magnetization direction of the magnetization switching region 13 is the -Z direction, the first magnetization fixed region 11a and the magnetization switching region 13 form one magnetic domain, and the second magnetization fixed region 11b forms another magnetic domain. . That is, a domain wall is formed between the first magnetization fixed region 11 b and the magnetization switching region 13.

  In addition, as a method of arranging the domain wall between the magnetization fixed region and the magnetization switching region in this way, there are other methods such as using a planar shape such as a constriction and making an intentional step.

  As shown in FIG. 5, the magnetic read layer 50 includes a magnetic sense layer 45, a tunnel barrier layer 42, and a pinned layer 40. These magnetic sense layer 45, tunnel barrier layer 42, and pinned layer 40 form a magnetic tunnel junction (MTJ). Both the magnetic sense layer 45 and the pinned layer 40 are magnetic films having in-plane magnetic anisotropy, and the material includes at least one material selected from Fe, Co, and Ni. Is desirable. Specific examples include NiFe, CoFe, CoFeB, and laminated films thereof.

As shown in FIG. 5, the pinned layer 40 may be a laminated ferrimagnetic structure including a first ferromagnetic layer 44, a nonmagnetic layer 41, and a second ferromagnetic layer 43. The advantage of the laminated ferrimagnetic structure is that the magnitude of the leakage magnetic field from the pinned layer can be adjusted by the magnetic characteristics and film thickness of each layer. The magnetization direction of the pinned layer 40 is not changed by writing and reading operations. Therefore, it is desirable that the magnetic anisotropy of the pinned layer 40 is larger than that of the magnetic sense layer 45. This is realized by changing materials and compositions of the magnetic sense layer 45 and the pinned layer 40. Further, on the surface opposite to the tunnel barrier layer 42 of the pinned layer 40, when a laminated ferrimagnetic structure is used, an antiferromagnetic material layer such as PtMn, IrMn, FeMn or the like is laminated on the second ferromagnetic layer 43 and magnetized. It is also realized by pinning. As the tunnel barrier layer 42, a thin insulating film such as an Al ₂ O ₃ film or an MgO film can be used.

  The magnetic read layer 50 and the magnetization recording layer 10 are formed on surfaces that are not relatively parallel. In the present embodiment, the separation layer 46 provided on the magnetic recording layer 10 is formed in a wedge shape, and the magnetic read layer 50 is formed thereon. However, the wedge shape of the separation layer 46 means that the cross section perpendicular to the substrate of the separation layer 46 has a wedge shape. In this case, an inclination is formed along the X direction. That is, the inclination is such that the first magnetization fixed region 11a side is low and the second magnetization fixed region 11b side is high. The separation layer 46 is processed into a wedge shape by an obliquely incident ion milling method or by forming the separation layer 46 while relatively shifting the target and the substrate position. However, the inclination may be reversed. That is, the inclination may be such that the first magnetization fixed region 11a side is high and the second magnetization fixed region 11b side is low.

  As described above, by arranging the magnetic reading layer 50, that is, the magnetic sensing layer 45 and the magnetic recording layer 10 on surfaces that are not relatively parallel, the magnetic sensing layer 45 and the magnetic recording layer 10 are arranged in the X direction or Y direction. The leakage magnetic flux from the magnetization recording layer 10 can be efficiently guided to the magnetic sensing layer 45 without shifting in the direction.

  FIG. 6 schematically shows the leakage magnetic flux from the magnetization recording layer in FIG. The leakage magnetic flux 71 from the magnetization recording layer 10 is perpendicular to the magnetization recording layer 10 in the magnetic sensing layer 45. The leakage magnetic flux 71 can be vector-decomposed into a component 73 perpendicular to the surface of the magnetic sensing layer 45 and a component 73 parallel to the surface. Among these, the component 72 perpendicular to the surface of the magnetic sense layer 45 does not contribute to the magnetization reversal of the magnetic sense layer 45 due to the demagnetizing field in the vertical direction of the magnetic sense layer 45, that is, the shape anisotropy. Accordingly, the magnetization of the magnetic sensing layer 45 changes due to the component 73 parallel to the surface of the magnetic sensing layer 45. If the relative tilt angle between the magnetic sensing layer 45 and the magnetization recording layer 10 is θ, the in-plane component 73 is proportional to sin θ. For example, in the case of an inclination of 30 degrees, 50% of the vertical leakage magnetic flux acts as an effective magnetic field for inverting the magnetic sensing layer 45 from sin θ = ½. Although the perpendicular leakage magnetic flux depends on the saturation magnetization and the film thickness of the magnetization recording layer 10, it is about 100 Oe. Therefore, if the coercive force of the magnetic sensing layer 45 is set to 50 Oe or less, it corresponds to the magnetization direction of the magnetization recording layer 10. The change in resistance can be read out.

  FIG. 7 shows a first modification of the magnetic memory element according to the first embodiment of the present invention. In FIG. 7, the magnetic read layer 50 is inclined along the Y direction. That is, the inclination is such that the front side of the magnetization reversal region 13 is low and the back side of the magnetization reversal region 13 is high. However, the inclination may be reversed. That is, the inclination may be such that the near side of the magnetization reversal region 13 is high and the back side of the magnetization reversal region 13 is low. Thus, the direction of inclination may be the X direction (FIGS. 5 and 6) or the Y direction (FIG. 7).

  Furthermore, in the present embodiment, the direction of the inclination may be not only the X direction and the Y direction, but also any other direction. Furthermore, the shape of the magnetic read layer 50 is not limited to the rectangular shape as shown in FIGS. 4 to 7 and may be, for example, an elliptical shape. What is important is that the magnetization direction of the magnetization fixed layer 40 is determined so that the magnetization change direction of the magnetic sensing layer 45 can be read as a resistance change of the MTJ. That is, it is desirable that the magnetization direction of the magnetization fixed layer 40 is fixed in the tilt direction.

  FIG. 8 shows a second modification of the magnetic memory element according to the first embodiment of the present invention. In FIG. 8, in the magnetic memory element 1, the magnetic reading layer 50 is disposed below, the magnetization recording layer 10 is disposed above, and the magnetization recording layer 10 is inclined with respect to the substrate surface. Also in this configuration, the magnetization direction of the magnetization recording layer 10 can be read by the magnetic sensing layer 45.

  In this embodiment, since the read current passes through the separation layer 46, the separation layer 46 needs to be a metal. However, regarding the path of the read current, it is not always necessary to use a terminal connected to the magnetization recording layer 10. For example, in the first embodiment shown in FIG. 5, an insulating layer may be provided between the separation layer 46 and the magnetic recording layer 10, and another terminal may be provided on the separation layer 46. In this case, the magnetic read layer 50 and the magnetization recording layer 10 are made completely independent from each other, and reading is performed between the terminal provided on the separation layer 46 and the current terminal 14c. Dividing the current path is important in order to prevent erroneous writing due to the read current during reading.

2. Write Operation and Read Operation Next, a data write operation for the memory cell 1 (magnetoresistance element) according to the first exemplary embodiment of the present invention will be described. First, the principle of writing data to the magnetic memory element 1 will be described. FIG. 9 shows the principle of writing data to the magnetic memory element 1 according to the first embodiment of the present invention. Data writing is performed by a domain wall motion method using spin injection. The write current flows in a plane in the magnetization recording layer 10, not in the direction penetrating the MTJ. The write current is supplied to the magnetic recording layer 10 from the current supply terminals 14a and 14b. In the data “0” state, the magnetization direction of the magnetization switching region 13 is the −Z direction, and the domain wall DW12 exists at the boundary between the magnetization switching region 13 and the second magnetization fixed region 11b. On the other hand, in the data “1” state, the magnetization direction of the magnetization switching region 13 is the + Z direction, and the domain wall DW12 exists at the boundary between the magnetization switching region 13 and the first magnetization fixed region 11a.

  When data “1” is written, the first write current IW1 flows from the first magnetization fixed region 11a through the magnetization switching region 13 to the second magnetization fixed region 11b. In this case, spin electrons are injected into the magnetization switching region 13 from the second magnetization fixed region 11b. The spin of the injected electrons drives the domain wall DW12 at the boundary between the magnetization switching region 13 and the second magnetization fixed region 11b in the direction of the first magnetization fixed region 11a. As a result, the magnetization direction of the magnetization switching region 13 is switched to the + Z direction. That is, due to the spin transfer effect, the magnetization of the magnetization switching region 13 is reversed and the magnetization direction is changed to the + Z direction. As a result, data “1” is written.

  On the other hand, when data “0” is written, the second write current IW2 flows from the second magnetization fixed region 11b through the magnetization switching region 13 to the first magnetization fixed region 11a. In this case, spin electrons are injected into the magnetization switching region 13 from the first magnetization fixed region 11a. The spin of the injected electrons drives the domain wall DW12 at the boundary between the magnetization switching region 13 and the first magnetization fixed region 11a in the direction of the second magnetization fixed region 11b. As a result, the magnetization of the magnetization switching region 13 is reversed, and the magnetization direction is changed to the −Z direction. As a result, data “0” is written.

  As described above, the magnetization direction of the magnetization switching region 13 is switched by the write currents IW1 and IW2 flowing in the magnetization recording layer 10 in a plane. The first magnetization fixed region 11a and the second magnetization fixed region 11b serve as a supply source of electrons having different spins.

  Next, the data read operation for the memory cell 1 (magnetoresistance element) according to the first exemplary embodiment of the present invention will be described with reference to the case of FIG. A read current is supplied to the magnetic read layer 50. That is, the read current flows from the current terminal 14c to the current supply terminal 14a via the pinned layer 40, the barrier layer 42, the magnetic sense layer 45, the separation layer 46, the magnetization switching region 13, and the first fixed region 11a. . The magnetization of the pinned layer 40 is fixed in the direction along the slope (the −XZ direction (the direction in which the −X direction and the −Z direction are combined, the same applies hereinafter)). However, it is the first ferromagnetic layer 44 that contributes as MTJ at the time of reading in the pinned layer 40. The magnetic anisotropy of the magnetic sense layer 45 is also in the direction along the slope.

  In the data “0” state, the magnetization of the magnetization recording layer 10 (magnetization switching region 13) in the vicinity of the magnetic sensing layer 45 is in the −Z direction. At this time, the magnetic field applied to the magnetic sense layer 45 is also in the −Z direction. Since the magnetic sense layer 45 is difficult to face due to the demagnetizing field in the direction perpendicular to the slope, the magnetic field from the magnetization recording layer 10 contributes to the change in the magnetization direction of the magnetic sense layer 45 as shown in FIG. It becomes only a component parallel to such a slope. In the case of data “0”, since this component faces the −XZ direction, the magnetization of the magnetic sense layer 45 also faces the −XZ direction. At this time, the relative angles of magnetization of the magnetic sensing layer 45 and the pinned layer 40 are parallel, and the tunnel resistance of the magnetic reading layer 50 is in a low resistance state.

  In the data “1” state, the magnetization of the magnetization recording layer 10 (magnetization switching region 13) in the vicinity of the magnetic sensing layer 45 is in the + Z direction. At this time, the magnetic field applied to the magnetic sense layer 45 is also in the + Z direction. Therefore, of the magnetic field from the magnetization recording layer 10, the change in the magnetization direction at the position of the magnetic sense layer 45 contributes to the + XZ direction (the direction in which the + X direction and the + Z direction are combined, the same applies hereinafter) direction parallel to the inclined surface. It is an ingredient. For this reason, the magnetization of the magnetic sense layer 45 also faces the + XZ direction. At this time, the relative angles of magnetization of the magnetic sensing layer 45 and the pinned layer 40 are antiparallel, and the tunnel resistance of the magnetic reading layer 50 is in a high resistance state.

  The magnetic anisotropy direction of the magnetic sense layer 45 and the pinned layer 40 may be other than the direction shown in FIG. For example, when the magnetic anisotropy of the magnetic sense layer 45 is in the Y direction, the magnetization direction of the magnetic sense layer 45 may not be completely in the ± XZ direction depending on the magnitude of the magnetic field from the magnetization recording layer 10. However, a resistance change corresponding to a change in the magnetization direction of the magnetization recording layer 10 can be obtained.

3. Integration in MRAM The magnetic memory element 1 (magnetoresistance element) described above can be used by being integrated in the MRAM. FIG. 10 is a conceptual diagram showing the configuration of the MRAM according to the first exemplary embodiment of the present invention. The MRAM has a memory cell array 60 in which a plurality of memory cells 61 are arranged in a matrix. In each memory cell 61, a magnetic memory element 1 (magnetoresistive element) and two select transistors TR1 and TR2 are integrated. One of the source / drain of the selection transistor TR1 is connected to the current supply terminal 14a connected to the first magnetization fixed region 11a (or the hard layer 9a), and the other is connected to the first bit line BL1. One of the source / drain of the selection transistor TR2 is connected to the current supply terminal 14b of the second magnetization fixed region 11b (or the hard layer 9b), and the other is connected to the second bit line BL2. The gates of the selection transistors TR1 and TR2 are connected to the word line WL. The magnetic read layer 50 of the magnetic memory element 1 (magnetoresistance element) is connected to the ground line through the current terminal 14c and the wiring.

  The word line WL is connected to the X selector 62. The X selector 62 selects a word line WL corresponding to a target memory cell 61 (hereinafter referred to as “selected memory cell”) as a selected word line WL in data writing / reading. The first bit line BL1 is connected to the Y-side current termination circuit 64, and the second bit line BL2 is connected to the Y selector 63. The Y selector 63 selects the second bit line BL2 connected to the selected memory cell 61 as the selected second bit line BL2. The Y-side current termination circuit 64 selects the first bit line BL1 connected to the selected memory cell as the selected first bit line BL1.

  The memory cell array 60 includes a reference cell 61r that is referred to when reading data, in addition to the memory cell 61 used for data recording. The structure of the reference cell 61r is the same as that of the memory cell 61. A first reference bit line BL1r and a second reference bit line BL2r are provided along the column of reference cells 61r.

  The operation of the MRAM at the time of data writing is as follows: The Y-side current source circuit 65 supplies or draws a predetermined write current (IW1, IW2) to the selected second bit line. The Y-side power supply circuit 66 supplies a predetermined voltage to the Y-side current termination circuit 64. As a result, the write currents (IW1, IW2) flow into or out of the Y selector 63. These X selector 62, Y selector 63, Y side current termination circuit 64, Y side current source circuit 65, and Y side power supply circuit 66 supply write currents IW1 and IW2 to the magnetoresistive elements to write data. Is configured.

  On the other hand, the operation of the MRAM during data reading is as follows: the first bit line BL1 is set to “Open”. The read current adding circuit 67 supplies a predetermined read current to the selected second bit line. Further, the read current adding circuit 67 supplies a predetermined current to the second reference bit line BL2r connected to the reference cell 61r corresponding to the selected word line WL. The sense amplifier 68 determines the data stored in the selected memory cell 61 from the difference between the potential of the second reference bit line BL2r and the potential of the selected second bit line BL2, and outputs the data. The X selector 62, Y selector 63, Y-side current termination circuit 64, read current adding circuit 67, and sense amplifier 68 constitute a read control circuit for supplying read current to the magnetoresistive element and reading data. Yes.

  The write control circuit that controls the write operation and the read control circuit that controls the read operation can be regarded as a data control circuit. Note that the configuration of the data control circuit is not limited to this example, and other configurations can be used as long as writing to and reading from the memory cell 61 are possible.

  As described above, in the present embodiment, in a magnetoresistive element using a magnetization recording layer and a magnetization free layer having perpendicular anisotropy, a high MR ratio is achieved with a high yield without increasing the element area. It is possible to provide a configuration that can be realized.

(Second Embodiment)
First, a magnetic memory element 1a (magnetoresistance element) according to a second embodiment of the present invention will be described.

1. Structure of Magnetoresistive Element FIG. 11 shows an example of a perspective view of a magnetic memory element 1a (magnetoresistive element) according to a second embodiment of the present invention. The magnetic memory element 1 a includes a spin injection element layer 80 and a magnetic read layer 50. A separation layer 46 is disposed between the spin injection element layer 80 and the magnetic read layer 50. The spin injection element layer 80 is provided with a current terminal 84a. A current terminal 84 b is connected to the magnetic read layer 50. As in the first embodiment, since the read current passes through the separation layer 46, the separation layer 46 is a metal.

  The spin injection element layer 80 includes a magnetization fixed layer 81, an intermediate layer 52, and a magnetization free layer 55. Both the magnetization fixed layer 81 and the magnetization free layer 55 have perpendicular magnetic anisotropy. The material used is the same as that of the magnetic recording layer 10 shown in FIG. Here, since the magnetization free layer 55 records information as the magnetization direction, it can also be regarded as a magnetization recording layer. The intermediate layer 52 may be a tunnel insulating film or a nonmagnetic metal such as Cu. Further, the magnetization fixed layer 81 may be a laminated magnetic layer including the magnetic layer 53, the nonmagnetic layer 51, and the magnetic layer 54. The magnetization direction of the magnetization fixed layer 81 is unchanged during operation. On the other hand, the magnetization direction of the magnetization free layer 55 can be controlled based on the spin torque effect by applying a current in the stacking direction. That is, when the magnetization of the magnetization fixed layer 81 is fixed in the direction shown in FIG. 11, the magnetization of the magnetization free layer 55 is reversed by applying a current in the + Z direction (electrons flow in the opposite direction) ( -Z direction).

  The magnetic read layer 50 has in-plane magnetic anisotropy and is disposed on the inclined separation layer 46, as in the first embodiment shown in FIG. Therefore, as described in the first embodiment, the leakage magnetic flux can be read from the magnetization free layer 55 as a resistance change of the magnetic read layer 50. The tilt direction may be not only the X direction but also the Y direction or any other direction, or if the magnetization direction of the magnetization fixed layer 40 is fixed in the tilt direction, it may have any shape. As described in the first embodiment.

  FIG. 12 shows a modified example of the magnetic memory element according to the second embodiment of the present invention. In the present modification, the third current terminal 84 c is connected to the separation layer 46. In this configuration, the write current path can be divided between 84a and 84c, and the read current path can be divided between 84b and 84c. Dividing the current path is important in order to prevent erroneous writing due to the read current during reading.

2. Write Operation and Read Operation Next, a data write operation and a read operation for the memory cell 1a (magnetoresistance element) according to the second exemplary embodiment of the present invention will be described. Here, the magnetic memory cell 1a of FIG. 12 will be described.

First, a data write operation will be described.
When data “0” is written, a write current flows from the current terminal 84c to the current terminal 84a through the separation layer 46, the magnetization free layer 55, the intermediate layer 52, and the magnetization fixed layer 81 (electrons flow in the opposite direction). In this case, the magnetization free layer 55 is magnetized in the + Z direction by the spin transfer effect. As a result, data “0” is written (state shown in FIG. 12). On the other hand, when data “1” is written, a write current flows from the current terminal 84 a to the current terminal 84 c through the magnetization fixed layer 81, the intermediate layer 52, the magnetization free layer 55, and the separation layer 46. In this case, the magnetization free layer 55 is magnetized in the −Z direction by the spin transfer effect. As a result, data “1” is written.

Next, a data read operation will be described.
A read current is supplied to the magnetic read layer 50. That is, the read current flows from the current terminal 84 b to the current terminal 84 c via the pinned layer 40, the barrier layer 42, the magnetic sense layer 45, and the separation layer 46. The magnetization of the pinned layer 40 is fixed in the direction along the slope (+ XZ direction). However, it is the first ferromagnetic layer 44 that contributes as MTJ at the time of reading in the pinned layer 40. The magnetic anisotropy of the magnetic sense layer 45 is also in the direction along the slope.

  In the data “0” state, the magnetization of the magnetization free layer 55 below the magnetic sense layer 45 is in the + Z direction. At this time, the magnetic field applied to the magnetic sense layer 45 is also in the + Z direction. Since the magnetic sense layer 45 is difficult to face due to the demagnetizing field in the direction perpendicular to the slope, the magnetic field from the magnetization free layer 55 contributes to the change in the magnetization direction of the magnetic sense layer 45 as shown in FIG. It becomes only a component parallel to such a slope. In the case of data “0”, since this component faces the + XZ direction, the magnetization of the magnetic sensing layer 45 also faces the + XZ direction. At this time, the relative angles of magnetization of the magnetic sensing layer 45 and the pinned layer 40 are parallel, and the tunnel resistance of the magnetic reading layer 50 is in a low resistance state.

  In the data “1” state, the magnetization of the magnetization free layer 55 below the magnetic sensing layer 45 is in the −Z direction. At this time, the magnetic field applied to the magnetic sense layer 45 is also in the −Z direction. Therefore, of the magnetic field from the magnetization free layer 55, the component in the -XZ direction parallel to the slope contributes to the change in the magnetization direction of the magnetic sense layer 45. Therefore, the magnetization of the magnetic sense layer 45 is also directed in the −XZ direction. At this time, the relative angles of magnetization of the magnetic sensing layer 45 and the pinned layer 40 are antiparallel, and the tunnel resistance of the magnetic reading layer 50 is in a high resistance state.

3. Integration in MRAM The magnetic memory element 1a (magnetoresistance element) described above can also be used by being integrated in the MRAM as in the first embodiment. Similar to the first embodiment, the configuration of the MRAM shown in FIG. 10 can be used. In this case, for example, in each memory cell 61, the magnetic memory cell 1a (magnetoresistance element) of FIG. 12 and the two selection transistors TR1 and TR2 are integrated. One of the source / drain of the selection transistor TR1 is connected to the current terminal 84a of the magnetization fixed layer 81, and the other is connected to the first bit line BL1. One of the source / drain of the selection transistor TR2 is connected to the current terminal 84c of the isolation layer 46, and the other is connected to the second bit line BL2. The gates of the selection transistors TR1 and TR2 are connected to the word line WL. The magnetic read layer 50 of the magnetic memory element 1 (magnetoresistance element) is connected to a ground line through a current terminal 84b and wiring. Since the read operation and the write operation are the same as those in the first embodiment, description thereof is omitted.

  As described above, in the present embodiment, in a magnetoresistive element using a magnetization recording layer and a magnetization free layer having perpendicular anisotropy, a high MR ratio is achieved with a high yield without increasing the element area. It is possible to provide a configuration that can be realized.

  FIG. 13 shows a reference technique related to the present invention considered by the inventors. In FIG. 13, instead of changing the relative angle between the magnetic recording layer 10 and the magnetic read layer 50 (example: example of FIG. 5), the direction of magnetic anisotropy of the magnetic recording layer 10 is tilted from the vertical direction ( For example, it is slightly inclined from the + Z direction to the + X direction). Thereby, since an in-plane component is generated in the leakage magnetic field from the magnetization recording layer 10, the magnetization reversal of the magnetization recording layer 10 can be read by the magnetic reading layer 50.

  Examples of utilization of the present invention include nonvolatile semiconductor memory devices used in mobile phones, mobile personal computers and PDAs, and microcomputers with built-in nonvolatile memory used in automobiles and the like.

  Although various embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments. Various changes that can be understood by those skilled in the art can be made to the configuration and details of the present invention within the scope of the present invention. The technology in each embodiment can be applied to other embodiments as long as no contradiction occurs.

DESCRIPTION OF SYMBOLS 1, 1a Magnetic memory element 9a, 9b Magnetization hard layer 10 Magnetization recording layer 11a 1st magnetization fixed area | region 11b 2nd magnetization fixed area | region 12 Domain wall 13 Magnetization inversion area | region 14a, 14b, 14c Current end 40 Pin layer 41 Nonmagnetic layer 42 Tunnel Barrier layer 43 Second ferromagnetic layer 44 First ferromagnetic layer 45 Magnetic sensing layer 46 Separating layer 50 Magnetic readout layer 51 Nonmagnetic layer 52 Intermediate layer 53 Magnetic layer 54 Magnetic layer 55 Magnetized free layer 60 Memory cell array 61 Memory cell 61r Reference Cell 62 X selector 63 Y selector 64 Y side current termination circuit 65 Y side current source circuit 66 Y side power source circuit 67 Read current addition circuit 68 Sense amplifier 71 Leakage magnetic flux 72, 73 Component 80 Spin injection element layer 81 Magnetization fixed layer 84a, 84b, 84c Current terminal TR1, TR2 Transitions BL1 first bit line BL2 second bit line WL the word line

Claims (11)

A magnetic recording layer that has a perpendicular magnetic anisotropy and stores information as a magnetization direction;
A magnetic readout layer having a magnetic tunnel junction including a ferromagnetic layer having in-plane magnetic anisotropy, and
The magnetic recording element and the magnetic reading layer are arranged on planes that are not parallel to each other. The magnetic memory element according to claim 1, wherein the magnetic read layer is formed to be inclined with respect to the substrate. The magnetic memory element according to claim 1, wherein the magnetization recording layer is formed to be inclined with respect to the substrate. The magnetic memory element according to claim 1, wherein a wedge-shaped nonmagnetic layer is disposed between the magnetization recording layer and the magnetic reading layer. Two or more current application terminals connected to the magnetization recording layer;
The magnetization recording layer has one or more domain walls;
5. The magnetic memory according to claim 1, wherein the write operation is performed by driving the domain wall by applying a current between the current application terminals and reversing the magnetization of the magnetization recording layer. element. The magnetization recording layer is
A first magnetization fixed region in which magnetization is fixed in a first direction;
A second magnetization fixed region in which magnetization is fixed in a second direction opposite to the first direction;
A magnetization reversal region connected to the first magnetization fixed region and the second magnetization fixed region;
The magnetic memory element according to claim 5, wherein the first magnetization fixed region has one of the current application terminals, and the second magnetization fixed region has another one of the current application terminals. Further comprising a read terminal connected to the magnetic read layer;
The magnetic memory element according to claim 5, wherein a read operation is performed based on an electrical resistance between any of the current application terminals and the read terminal. A nonmagnetic layer adjacent to the magnetization recording layer;
A magnetization pinned layer adjacent to the nonmagnetic layer;
The magnetic memory element according to claim 1, wherein the magnetization direction of the magnetization recording layer is controlled by applying a current between the magnetization recording layer and the magnetization fixed layer. A first terminal connected to the magnetization recording layer;
The magnetic memory according to claim 8, further comprising: a second terminal connected to the magnetization fixed layer, wherein a write operation is performed by applying a current between the first terminal and the second terminal. element. A third terminal connected to the magnetic read layer;
The magnetic memory element according to claim 8, wherein a read operation is performed based on an electrical resistance between the second terminal and the third terminal. A plurality of magnetic memory elements according to any one of claims 1 to 10 arranged on a matrix;
A magnetic random access memory comprising: a control circuit that controls a write operation and a read operation of the plurality of magnetic memory elements.

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