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WO2009022377A1 - 放射線検出素子用のシリコンカーバイド及び放射線検出方法 - Google Patents

放射線検出素子用のシリコンカーバイド及び放射線検出方法 Download PDF

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Publication number
WO2009022377A1
WO2009022377A1 PCT/JP2007/065727 JP2007065727W WO2009022377A1 WO 2009022377 A1 WO2009022377 A1 WO 2009022377A1 JP 2007065727 W JP2007065727 W JP 2007065727W WO 2009022377 A1 WO2009022377 A1 WO 2009022377A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
radiation
sic
detecting
detecting element
Prior art date
Application number
PCT/JP2007/065727
Other languages
English (en)
French (fr)
Inventor
Hideharu Matsuura
Original Assignee
Osaka Electro-Communication University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Electro-Communication University filed Critical Osaka Electro-Communication University
Priority to JP2008558133A priority Critical patent/JPWO2009022377A1/ja
Priority to PCT/JP2007/065727 priority patent/WO2009022377A1/ja
Publication of WO2009022377A1 publication Critical patent/WO2009022377A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1037—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIVBVI compounds
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)

Abstract

　放射線検出用素子を提供する。  　高純度であり半絶縁性を有するＳｉＣを放射線検出用素子として用いる。ＳｉＣ１の一方の面に半径が１．２５ｍｍ程度の円形状のＸ線の検出面としての電極２を形成する。ＳｉＣ１の他方の面の中央部に電極３を形成し、電極２、３の間に所定の直流電圧を印加する。電極２に入射したＸ線によりＳｉＣ１内で生成された電子が電極３に集められ、電極３より増幅器２０へ電気信号が出力される。増幅器２０は、入力された電気信号を増幅して生成された電子の数に応じた電圧を多重波高分析器へ出力する。
PCT/JP2007/065727 2007-08-10 2007-08-10 放射線検出素子用のシリコンカーバイド及び放射線検出方法 WO2009022377A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008558133A JPWO2009022377A1 (ja) 2007-08-10 2007-08-10 放射線検出素子用のシリコンカーバイド及び放射線検出方法
PCT/JP2007/065727 WO2009022377A1 (ja) 2007-08-10 2007-08-10 放射線検出素子用のシリコンカーバイド及び放射線検出方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065727 WO2009022377A1 (ja) 2007-08-10 2007-08-10 放射線検出素子用のシリコンカーバイド及び放射線検出方法

Publications (1)

Publication Number Publication Date
WO2009022377A1 true WO2009022377A1 (ja) 2009-02-19

Family

ID=40350441

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/065727 WO2009022377A1 (ja) 2007-08-10 2007-08-10 放射線検出素子用のシリコンカーバイド及び放射線検出方法

Country Status (2)

Country Link
JP (1) JPWO2009022377A1 (ja)
WO (1) WO2009022377A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016143156A1 (ja) * 2015-03-09 2017-06-15 株式会社日立製作所 放射線検出器およびそれを用いた放射線検出装置
WO2021168693A1 (en) * 2020-02-26 2021-09-02 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148342A (ja) * 2000-11-07 2002-05-22 Canon Inc 放射線撮像装置
JP2004228482A (ja) * 2003-01-27 2004-08-12 Japan Atom Energy Res Inst 化合物半導体ＩｎＳｂ単結晶を用いた半導体放射線検出器
JP2006234661A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 放射線入射位置検出装置および放射線入射位置検出方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260085A (en) * 1975-11-12 1977-05-18 Tdk Corp Neutron detector
JPS6412582A (en) * 1987-07-07 1989-01-17 Matsushita Electric Ind Co Ltd Semiconductor radiation detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148342A (ja) * 2000-11-07 2002-05-22 Canon Inc 放射線撮像装置
JP2004228482A (ja) * 2003-01-27 2004-08-12 Japan Atom Energy Res Inst 化合物半導体ＩｎＳｂ単結晶を用いた半導体放射線検出器
JP2006234661A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 放射線入射位置検出装置および放射線入射位置検出方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016143156A1 (ja) * 2015-03-09 2017-06-15 株式会社日立製作所 放射線検出器およびそれを用いた放射線検出装置
US11119228B2 (en) 2015-03-09 2021-09-14 Hitachi, Ltd. Radiation detector and radiation detection device using the same
WO2021168693A1 (en) * 2020-02-26 2021-09-02 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector

Also Published As

Publication number Publication date
JPWO2009022377A1 (ja) 2010-11-11

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