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WO2009078274A1 - 集積回路および半導体装置 - Google Patents

集積回路および半導体装置 Download PDF

Info

Publication number
WO2009078274A1
WO2009078274A1 PCT/JP2008/071893 JP2008071893W WO2009078274A1 WO 2009078274 A1 WO2009078274 A1 WO 2009078274A1 JP 2008071893 W JP2008071893 W JP 2008071893W WO 2009078274 A1 WO2009078274 A1 WO 2009078274A1
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
integrated circuit
resistor
control unit
dividing
Prior art date
Application number
PCT/JP2008/071893
Other languages
English (en)
French (fr)
Inventor
Taichi Karino
Akio Kitamura
Takato Sugawara
Original Assignee
Fuji Electric Device Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Device Technology Co., Ltd. filed Critical Fuji Electric Device Technology Co., Ltd.
Priority to JP2009546208A priority Critical patent/JP5104878B2/ja
Priority to CN200880121334.7A priority patent/CN101952955B/zh
Priority to US12/746,712 priority patent/US8638160B2/en
Publication of WO2009078274A1 publication Critical patent/WO2009078274A1/ja
Priority to US13/964,348 priority patent/US9411346B2/en

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)

Abstract

　分圧回路を集積させた集積回路(１００)は、第１抵抗(１２１)と、第２抵抗(１２２)と、制御部(１３０)と、スイッチ(１４０)と、切換部(１５０)と、を備えている。第１抵抗(１２１)および第２抵抗(１２２)は、制御部(１３０)へ供給される交流電圧を整流した電圧または直流電圧を分圧する抵抗分圧素子を構成している。スイッチ(１４０)は、抵抗分圧素子と直列に設けられ、抵抗分圧素子を通過する電流を通過させ、または遮断する。切換部(１５０)は、制御部(１３０)の駆動時は電流を通過させ、制御部(１３０)の待機時は電流を遮断するようにスイッチ(１４０)を切り換える。
PCT/JP2008/071893 2007-12-14 2008-12-02 集積回路および半導体装置 WO2009078274A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009546208A JP5104878B2 (ja) 2007-12-14 2008-12-02 集積回路および半導体装置
CN200880121334.7A CN101952955B (zh) 2007-12-14 2008-12-02 集成电路和半导体器件
US12/746,712 US8638160B2 (en) 2007-12-14 2008-12-02 Integrated circuit and semiconductor device
US13/964,348 US9411346B2 (en) 2007-12-14 2013-08-12 Integrated circuit and semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007323949 2007-12-14
JP2007-323949 2007-12-14

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/746,712 A-371-Of-International US8638160B2 (en) 2007-12-14 2008-12-02 Integrated circuit and semiconductor device
US13/964,348 Division US9411346B2 (en) 2007-12-14 2013-08-12 Integrated circuit and semiconductor device

Publications (1)

Publication Number Publication Date
WO2009078274A1 true WO2009078274A1 (ja) 2009-06-25

Family

ID=40795392

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071893 WO2009078274A1 (ja) 2007-12-14 2008-12-02 集積回路および半導体装置

Country Status (4)

Country Link
US (2) US8638160B2 (ja)
JP (1) JP5104878B2 (ja)
CN (1) CN101952955B (ja)
WO (1) WO2009078274A1 (ja)

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* Cited by examiner, † Cited by third party
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CN102480217A (zh) * 2010-11-30 2012-05-30 英飞凌科技股份有限公司 用于驱动开关的系统和方法
JP2012138387A (ja) * 2010-12-24 2012-07-19 Sanken Electric Co Ltd 起動回路、スイッチング電源用ｉｃ及びスイッチング電源装置
JP2012196109A (ja) * 2011-03-18 2012-10-11 Sanken Electric Co Ltd スイッチング電源装置の制御回路及びスイッチング電源装置
US20140054708A1 (en) * 2010-11-30 2014-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked and Tunable Power Fuse
US20150001677A1 (en) * 2013-06-28 2015-01-01 Stmicroelectronics S.R.L. Semiconductor device integrating a voltage divider and process for manufacturing a semiconductor device
JP2016081992A (ja) * 2014-10-14 2016-05-16 富士電機株式会社 半導体装置
US20160293696A1 (en) * 2011-06-14 2016-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage resistor with pin diode isolation
JP2017112703A (ja) * 2015-12-15 2017-06-22 富士電機株式会社 半導体装置
CN112310073A (zh) * 2019-06-28 2021-02-02 精工爱普生株式会社 半导体装置以及电源控制ic
JP2021121141A (ja) * 2020-01-30 2021-08-19 株式会社沖データ 電源回路及び画像形成装置

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US20120313692A1 (en) * 2011-06-08 2012-12-13 Sehat Sutardja Super-high-voltage resistor on silicon
US8928043B2 (en) * 2013-04-25 2015-01-06 Monolithic Power Systems, Inc. High voltage FET device with voltage sensing
TWI489744B (zh) * 2013-06-03 2015-06-21 Richtek Technology Corp 交流對直流電源轉換器的控制電路
WO2014203487A1 (ja) 2013-06-20 2014-12-24 富士電機株式会社 半導体装置、スイッチング電源用制御ｉｃおよびスイッチング電源装置
US9941268B2 (en) * 2014-03-13 2018-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. Series resistor over drain region in high voltage device
JP6531447B2 (ja) * 2015-03-20 2019-06-19 富士電機株式会社 半導体装置
US9698214B1 (en) * 2016-03-31 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitor structure of integrated circuit chip and method of fabricating the same
US10475784B2 (en) * 2017-05-30 2019-11-12 Vanguard International Semiconductor Corporation Semiconductor structure with a resistor and a transistor and method for forming the same
DE102017130213B4 (de) * 2017-12-15 2021-10-21 Infineon Technologies Ag Planarer feldeffekttransistor
DE102018112866B4 (de) 2018-05-29 2020-07-02 Infineon Technologies Ag Halbleitervorrichtung mit elektrischem Widerstand
DE102018113145B4 (de) * 2018-06-01 2020-06-04 Infineon Technologies Ag Gleichrichtereinrichtung
CN114823664A (zh) 2018-06-19 2022-07-29 新唐科技日本株式会社 半导体装置
WO2019244387A1 (ja) * 2018-06-19 2019-12-26 パナソニックＩｐマネジメント株式会社 半導体装置
JP7180359B2 (ja) * 2018-12-19 2022-11-30 富士電機株式会社 抵抗素子
DE102019008580A1 (de) 2019-02-19 2020-08-20 Semiconductor Components Industries, Llc Verfahren zum bilden einer halbleitervorrichtung und struktur dafür
US11152454B2 (en) * 2019-02-19 2021-10-19 Semiconductor Components Industries, Llc Method of forming a semiconductor device having a resistor and structure therefor
US11585860B2 (en) * 2020-05-13 2023-02-21 Nuvoton Technology Corporation Japan Semiconductor device

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Cited By (20)

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CN102480217A (zh) * 2010-11-30 2012-05-30 英飞凌科技股份有限公司 用于驱动开关的系统和方法
US20140054708A1 (en) * 2010-11-30 2014-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked and Tunable Power Fuse
CN104767360B (zh) * 2010-11-30 2017-10-10 英飞凌科技股份有限公司 用于驱动开关的系统和方法
CN104753319A (zh) * 2010-11-30 2015-07-01 英飞凌科技股份有限公司 用于驱动开关的系统和方法
CN104767360A (zh) * 2010-11-30 2015-07-08 英飞凌科技股份有限公司 用于驱动开关的系统和方法
US9299694B2 (en) * 2010-11-30 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked and tunable power fuse
CN104753319B (zh) * 2010-11-30 2017-07-18 英飞凌科技股份有限公司 用于驱动开关的方法
JP2012138387A (ja) * 2010-12-24 2012-07-19 Sanken Electric Co Ltd 起動回路、スイッチング電源用ｉｃ及びスイッチング電源装置
JP2012196109A (ja) * 2011-03-18 2012-10-11 Sanken Electric Co Ltd スイッチング電源装置の制御回路及びスイッチング電源装置
US20160293696A1 (en) * 2011-06-14 2016-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage resistor with pin diode isolation
US10103223B2 (en) * 2011-06-14 2018-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage resistor with pin diode isolation
US9461104B2 (en) * 2013-06-28 2016-10-04 Stmicroelectronics S.R.L. Semiconductor device integrating a voltage divider and process for manufacturing a semiconductor device
US20150001677A1 (en) * 2013-06-28 2015-01-01 Stmicroelectronics S.R.L. Semiconductor device integrating a voltage divider and process for manufacturing a semiconductor device
JP2016081992A (ja) * 2014-10-14 2016-05-16 富士電機株式会社 半導体装置
JP2017112703A (ja) * 2015-12-15 2017-06-22 富士電機株式会社 半導体装置
CN112310073A (zh) * 2019-06-28 2021-02-02 精工爱普生株式会社 半导体装置以及电源控制ic
US11502073B2 (en) 2019-06-28 2022-11-15 Seiko Epson Corporation Semiconductor device and power source control IC
CN112310073B (zh) * 2019-06-28 2023-06-06 精工爱普生株式会社 半导体装置以及电源控制ic
JP2021121141A (ja) * 2020-01-30 2021-08-19 株式会社沖データ 電源回路及び画像形成装置
JP7327186B2 (ja) 2020-01-30 2023-08-16 沖電気工業株式会社 電源回路及び画像形成装置

Also Published As

Publication number Publication date
US20130328619A1 (en) 2013-12-12
CN101952955A (zh) 2011-01-19
CN101952955B (zh) 2014-03-05
JPWO2009078274A1 (ja) 2011-04-28
US8638160B2 (en) 2014-01-28
JP5104878B2 (ja) 2012-12-19
US20120154026A1 (en) 2012-06-21
US9411346B2 (en) 2016-08-09

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