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WO2008139621A1 - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法 Download PDF

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Publication number
WO2008139621A1
WO2008139621A1 PCT/JP2007/059931 JP2007059931W WO2008139621A1 WO 2008139621 A1 WO2008139621 A1 WO 2008139621A1 JP 2007059931 W JP2007059931 W JP 2007059931W WO 2008139621 A1 WO2008139621 A1 WO 2008139621A1
Authority
WO
WIPO (PCT)
Prior art keywords
exposing
substrate
semiconductor device
fluorine radicals
producing semiconductor
Prior art date
Application number
PCT/JP2007/059931
Other languages
English (en)
French (fr)
Inventor
Takuya Seino
Manabu Ikemoto
Hiroki Date
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Priority to KR1020097023702A priority Critical patent/KR101157938B1/ko
Priority to JP2009513951A priority patent/JP4503095B2/ja
Priority to CN200780053807XA priority patent/CN101765905B/zh
Priority to PCT/JP2007/059931 priority patent/WO2008139621A1/ja
Publication of WO2008139621A1 publication Critical patent/WO2008139621A1/ja
Priority to US12/611,088 priority patent/US7807585B2/en

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    • H—ELECTRICITY
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
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Abstract

フッ素ラジカルを半導体基板の表面に露出して基板表面を洗浄後に、フッ素ラジカル又は水素化合物（SiH4等）で水素終端処理をして、Hf等をスパッタした後、酸化・窒化しHfO等の誘電体絶縁膜を形成する。これらの工程中、基板は大気に晒されることなく行われ、ヒステリシスの小さいＣ－Ｖ曲線が得られ、ＭＯＳ－ＦＥＴにあって良好なデバイス特性が実現される。
PCT/JP2007/059931 2007-05-15 2007-05-15 半導体素子の製造方法 WO2008139621A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020097023702A KR101157938B1 (ko) 2007-05-15 2007-05-15 반도체 소자 제조 방법
JP2009513951A JP4503095B2 (ja) 2007-05-15 2007-05-15 半導体素子の製造方法
CN200780053807XA CN101765905B (zh) 2007-05-15 2007-05-15 半导体器件的制备方法
PCT/JP2007/059931 WO2008139621A1 (ja) 2007-05-15 2007-05-15 半導体素子の製造方法
US12/611,088 US7807585B2 (en) 2007-05-15 2009-11-02 Method of fabricating a semiconductor device

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Application Number Priority Date Filing Date Title
PCT/JP2007/059931 WO2008139621A1 (ja) 2007-05-15 2007-05-15 半導体素子の製造方法

Related Child Applications (1)

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US12/611,088 Continuation US7807585B2 (en) 2007-05-15 2009-11-02 Method of fabricating a semiconductor device

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WO2008139621A1 true WO2008139621A1 (ja) 2008-11-20

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KR20100005126A (ko) 2010-01-13
CN101765905B (zh) 2012-07-18
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