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WO2008126718A1 - 半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート - Google Patents

半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート Download PDF

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Publication number
WO2008126718A1
WO2008126718A1 PCT/JP2008/056361 JP2008056361W WO2008126718A1 WO 2008126718 A1 WO2008126718 A1 WO 2008126718A1 JP 2008056361 W JP2008056361 W JP 2008056361W WO 2008126718 A1 WO2008126718 A1 WO 2008126718A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor
adhesive film
film
semiconductor chips
composite sheet
Prior art date
Application number
PCT/JP2008/056361
Other languages
English (en)
French (fr)
Inventor
Yuuki Nakamura
Tsutomu Kitakatsu
Youji Katayama
Keiichi Hatakeyama
Original Assignee
Hitachi Chemical Company, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Company, Ltd. filed Critical Hitachi Chemical Company, Ltd.
Priority to EP08739474A priority Critical patent/EP2139028A1/en
Priority to CN2008800107124A priority patent/CN101647096B/zh
Priority to US12/594,634 priority patent/US8232185B2/en
Priority to JP2009509251A priority patent/JP5045745B2/ja
Priority to KR1020097017859A priority patent/KR101162819B1/ko
Publication of WO2008126718A1 publication Critical patent/WO2008126718A1/ja
Priority to US13/420,266 priority patent/US20120244347A1/en

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    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
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    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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Abstract

 チップクラックやバリの発生を十分に抑制しながら、半導体ウェハから半導体チップを歩留よく得ることを可能にするための方法を提供する。  半導体ウェハ、半導体用接着フィルム及びダイシングテープがこの順で積層され、半導体ウェハが複数の半導体チップに分割されるとともに半導体用接着フィルムの厚さ方向の一部が切断されずに残るように切り込みが形成されている積層体を準備する工程と、ダイシングテープを複数の半導体チップが互いに離れる方向に引き伸ばすことにより、半導体用接着フィルムを切り込みに沿って分割する工程とを備える半導体チップの製造方法。半導体用接着フィルムは、5%未満の引張破断伸度を有し、該引張破断伸度が最大荷重時の伸度の110%未満である。
PCT/JP2008/056361 2007-04-05 2008-03-31 半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート WO2008126718A1 (ja)

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EP08739474A EP2139028A1 (en) 2007-04-05 2008-03-31 Method for manufacturing semiconductor chip, adhesive film for semiconductor, and composite sheet using the film
CN2008800107124A CN101647096B (zh) 2007-04-05 2008-03-31 半导体芯片的制造方法和半导体用粘接膜及其复合片
US12/594,634 US8232185B2 (en) 2007-04-05 2008-03-31 Method for manufacturing semiconductor chip, adhesive film for semiconductor, and composite sheet using the film
JP2009509251A JP5045745B2 (ja) 2007-04-05 2008-03-31 半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート
KR1020097017859A KR101162819B1 (ko) 2007-04-05 2008-03-31 반도체 칩의 제조방법, 및 반도체용 접착 필름 및 이것을 이용한 복합 시트
US13/420,266 US20120244347A1 (en) 2007-04-05 2012-03-14 Method for manufacturing semiconductor chip, adhesive film for semiconductor, and composite sheet using the film

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009048061A1 (ja) * 2007-10-09 2009-04-16 Hitachi Chemical Company, Ltd. 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法
WO2009048060A1 (ja) * 2007-10-09 2009-04-16 Hitachi Chemical Company, Ltd. 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法
JP2014045033A (ja) * 2012-08-24 2014-03-13 Hitachi Chemical Co Ltd 半導体装置の製造方法及び半導体装置
JP2015195264A (ja) * 2014-03-31 2015-11-05 日東電工株式会社 ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、半導体装置、及び、半導体装置の製造方法
CN107353841A (zh) * 2017-08-14 2017-11-17 东莞市哲华电子有限公司 一种Mylar片的低成本生产工艺
CN113299594A (zh) * 2021-05-25 2021-08-24 江西信芯半导体有限公司 Tvs芯片贴蓝膜后加工方法
JP7471879B2 (ja) 2020-03-18 2024-04-22 リンテック株式会社 フィルム状接着剤及びダイシングダイボンディングシート
JP7471880B2 (ja) 2020-03-18 2024-04-22 リンテック株式会社 フィルム状接着剤及びダイシングダイボンディングシート

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8647964B2 (en) * 2010-02-12 2014-02-11 Dow Corning Corporation Temporary wafer bonding method for semiconductor processing
JP5554118B2 (ja) * 2010-03-31 2014-07-23 古河電気工業株式会社 ウエハ加工用テープ
JP2012069919A (ja) * 2010-08-25 2012-04-05 Toshiba Corp 半導体装置の製造方法
JP2012195388A (ja) * 2011-03-15 2012-10-11 Toshiba Corp 半導体装置の製造方法及び半導体装置
US9559004B2 (en) 2011-05-12 2017-01-31 STATS ChipPAC Pte. Ltd. Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy
JP2013008915A (ja) * 2011-06-27 2013-01-10 Toshiba Corp 基板加工方法及び基板加工装置
CN103013365A (zh) * 2011-09-23 2013-04-03 古河电气工业株式会社 晶片加工用带
CN103178007A (zh) * 2011-12-20 2013-06-26 杭州士兰集成电路有限公司 划片方法、芯片制作方法及凸点玻璃封装二极管
US8936969B2 (en) 2012-03-21 2015-01-20 Stats Chippac, Ltd. Semiconductor device and method of singulating semiconductor wafer along modified region within non-active region formed by irradiating energy through mounting tape
CN104647615A (zh) * 2013-11-15 2015-05-27 台湾暹劲股份有限公司 晶圆切割装置及其切割方法
WO2016080570A1 (ko) * 2014-11-20 2016-05-26 주식회사 이녹스 유기전자장치용 봉지재 및 이를 포함하는 발광장치
JP7041476B2 (ja) * 2017-07-04 2022-03-24 日東電工株式会社 ダイシングテープおよびダイシングダイボンドフィルム
JP6977588B2 (ja) * 2018-01-30 2021-12-08 昭和電工マテリアルズ株式会社 半導体装置の製造方法及び接着フィルム
JP7019254B2 (ja) * 2018-04-10 2022-02-15 株式会社ディスコ 被加工物の切削方法
JP7305268B2 (ja) * 2019-08-07 2023-07-10 株式会社ディスコ ウェーハの加工方法
CN116062536B (zh) * 2023-02-07 2024-08-02 珠海芯烨电子科技有限公司 双面胶贴装组件、设备及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002192370A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法
JP2003338467A (ja) 2002-03-12 2003-11-28 Hamamatsu Photonics Kk 半導体基板の切断方法
WO2004109786A1 (ja) * 2003-06-06 2004-12-16 Hitachi Chemical Co., Ltd. 接着シート、ダイシングテープ一体型接着シート、及び半導体装置の製造方法
JP2006203133A (ja) * 2005-01-24 2006-08-03 Lintec Corp チップ体の製造方法、デバイスの製造方法およびチップ体固着用粘接着シート
JP2007335643A (ja) * 2006-06-15 2007-12-27 Nitto Denko Corp 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0979852B1 (en) * 1998-08-10 2004-01-28 LINTEC Corporation A dicing tape and a method of dicing a semiconductor wafer
JP2003257896A (ja) * 2002-02-28 2003-09-12 Disco Abrasive Syst Ltd 半導体ウェーハの分割方法
JP4107417B2 (ja) * 2002-10-15 2008-06-25 日東電工株式会社 チップ状ワークの固定方法
CN100454493C (zh) 2003-06-06 2009-01-21 日立化成工业株式会社 粘合片、与切割胶带一体化粘合片以及半导体的制造方法
KR100673685B1 (ko) 2005-04-29 2007-01-24 엘에스전선 주식회사 반도체용 접착 필름

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002192370A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法
JP2003338467A (ja) 2002-03-12 2003-11-28 Hamamatsu Photonics Kk 半導体基板の切断方法
WO2004109786A1 (ja) * 2003-06-06 2004-12-16 Hitachi Chemical Co., Ltd. 接着シート、ダイシングテープ一体型接着シート、及び半導体装置の製造方法
JP2006203133A (ja) * 2005-01-24 2006-08-03 Lintec Corp チップ体の製造方法、デバイスの製造方法およびチップ体固着用粘接着シート
JP2007335643A (ja) * 2006-06-15 2007-12-27 Nitto Denko Corp 半導体装置の製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009048061A1 (ja) * 2007-10-09 2009-04-16 Hitachi Chemical Company, Ltd. 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法
WO2009048060A1 (ja) * 2007-10-09 2009-04-16 Hitachi Chemical Company, Ltd. 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法
US8071465B2 (en) 2007-10-09 2011-12-06 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
US8198176B2 (en) 2007-10-09 2012-06-12 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
JP2014045033A (ja) * 2012-08-24 2014-03-13 Hitachi Chemical Co Ltd 半導体装置の製造方法及び半導体装置
JP2015195264A (ja) * 2014-03-31 2015-11-05 日東電工株式会社 ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、半導体装置、及び、半導体装置の製造方法
CN107353841A (zh) * 2017-08-14 2017-11-17 东莞市哲华电子有限公司 一种Mylar片的低成本生产工艺
JP7471879B2 (ja) 2020-03-18 2024-04-22 リンテック株式会社 フィルム状接着剤及びダイシングダイボンディングシート
JP7471880B2 (ja) 2020-03-18 2024-04-22 リンテック株式会社 フィルム状接着剤及びダイシングダイボンディングシート
CN113299594A (zh) * 2021-05-25 2021-08-24 江西信芯半导体有限公司 Tvs芯片贴蓝膜后加工方法

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TW200903609A (en) 2009-01-16
CN101647096B (zh) 2012-01-04
TWI419215B (zh) 2013-12-11
JP5045745B2 (ja) 2012-10-10
KR20090126249A (ko) 2009-12-08
CN101647096A (zh) 2010-02-10
US8232185B2 (en) 2012-07-31
US20100120229A1 (en) 2010-05-13

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