[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

WO2008079077A3 - Structure nanoélectronique et procédé de production associé - Google Patents

Structure nanoélectronique et procédé de production associé Download PDF

Info

Publication number
WO2008079077A3
WO2008079077A3 PCT/SE2007/001171 SE2007001171W WO2008079077A3 WO 2008079077 A3 WO2008079077 A3 WO 2008079077A3 SE 2007001171 W SE2007001171 W SE 2007001171W WO 2008079077 A3 WO2008079077 A3 WO 2008079077A3
Authority
WO
WIPO (PCT)
Prior art keywords
volume element
nanoelement
semiconductor device
producing
semiconductor
Prior art date
Application number
PCT/SE2007/001171
Other languages
English (en)
Other versions
WO2008079077A2 (fr
Inventor
Patrik Svensson
Jonas Ohlsson
Lars Samuelson
Truls Loewgren
Yourii Martynov
Original Assignee
Qunano Ab
Patrik Svensson
Jonas Ohlsson
Lars Samuelson
Truls Loewgren
Yourii Martynov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/812,226 external-priority patent/US8049203B2/en
Application filed by Qunano Ab, Patrik Svensson, Jonas Ohlsson, Lars Samuelson, Truls Loewgren, Yourii Martynov filed Critical Qunano Ab
Priority to EP07861100A priority Critical patent/EP2095426A4/fr
Publication of WO2008079077A2 publication Critical patent/WO2008079077A2/fr
Publication of WO2008079077A3 publication Critical patent/WO2008079077A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02606—Nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02653—Vapour-liquid-solid growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Led Devices (AREA)

Abstract

La présente invention concerne un dispositif à semi-conducteurs comprenant un élément nanométrique à semi-conducteurs (100) et un élément de volume (105) agencés en connexion épitaxiale l'un à l'autre. Le dispositif à semi-conducteurs est électriquement raccordable à l'élément de volume (105) et l'élément nanométrique (100) est connecté électriquement en série. L'élément de volume (105) est au moins partiellement dopé afin de produire une concentration de porteurs de charge élevée dans l'élément nanométrique (100) et une faible résistance d'accès dans la connexion électrique avec l'élément de volume (105). De préférence l'élément nanométrique (100) s'avance à partir d'un substrat à semi-conducteurs (110). Une couche concentrique (106) peut être agencée sur l'élément de volume (105) pour former un contact électrique. Des structures de DEL comprenant des structures d'élément de volume/éléments nanométriques (100, 105) sont décrites. Un procédé pour produire un dispositif à semi-conducteurs selon l'invention est également présenté.
PCT/SE2007/001171 2006-12-22 2007-12-22 Structure nanoélectronique et procédé de production associé WO2008079077A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07861100A EP2095426A4 (fr) 2006-12-22 2007-12-22 Structure nanoélectronique et procédé de production associé

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
SE0602840-1 2006-12-22
SE0602840 2006-12-22
SE0700102 2007-01-12
SE0700102-7 2007-01-12
US11/812,226 2007-06-15
US11/812,226 US8049203B2 (en) 2006-12-22 2007-06-15 Nanoelectronic structure and method of producing such
SE0702404 2007-10-26
SE0702404-5 2007-10-26

Publications (2)

Publication Number Publication Date
WO2008079077A2 WO2008079077A2 (fr) 2008-07-03
WO2008079077A3 true WO2008079077A3 (fr) 2008-08-21

Family

ID=40902775

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE2007/001171 WO2008079077A2 (fr) 2006-12-22 2007-12-22 Structure nanoélectronique et procédé de production associé

Country Status (2)

Country Link
EP (1) EP2095426A4 (fr)
WO (1) WO2008079077A2 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE533090C2 (sv) * 2008-07-09 2010-06-22 Qunano Ab Nanostrukturerad ljusdiod
US8692301B2 (en) 2008-09-04 2014-04-08 Qunano Ab Nanostructured photodiode
EP2412028A4 (fr) * 2009-03-25 2014-06-18 Qunano Ab Dispositif schottky
EP2472585B1 (fr) * 2009-09-30 2022-07-06 National University Corporation Hokkaido University Transistor à effet de champ et effet tunnel et procédé de fabrication associé
JP2011211047A (ja) * 2010-03-30 2011-10-20 Sharp Corp 表示装置、表示装置の製造方法および表示装置の駆動方法
US9329433B2 (en) 2010-03-12 2016-05-03 Sharp Kabushiki Kaisha Light-emitting device manufacturing method, light-emitting device, lighting device, backlight, liquid-crystal panel, display device, display device manufacturing method, display device drive method and liquid-crystal display device
CN102959740B (zh) 2010-09-14 2018-08-03 原子能与替代能源委员会 用于光发射的基于纳米线的光电器件
WO2012066444A1 (fr) * 2010-11-17 2012-05-24 International Business Machines Corporation Dispositifs à nanofil contraint
KR101316375B1 (ko) * 2011-08-19 2013-10-08 포항공과대학교 산학협력단 태양전지 및 이의 제조방법
US9653286B2 (en) 2012-02-14 2017-05-16 Hexagem Ab Gallium nitride nanowire based electronics
FR2991100B1 (fr) * 2012-05-25 2014-06-27 Commissariat Energie Atomique Transistor a base de nanofil, procede de fabrication du transistor, composant semi-conducteur integrant le transistor, programme informatique et support d'enregistrement associes au procede de fabrication
CN104603952B (zh) * 2012-07-06 2017-07-21 昆南诺股份有限公司 径向纳米线江崎二极管装置和方法
US9166106B2 (en) 2012-10-26 2015-10-20 Glo Ab Nanowire sized opto-electronic structure and method for modifying selected portions of same
FR3011383B1 (fr) * 2013-09-30 2017-05-26 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes
KR102168936B1 (ko) * 2014-03-28 2020-10-22 인텔 코포레이션 수직 반도체 디바이스들을 위한 선택적으로 재성장된 상부 컨택트
WO2015147865A1 (fr) * 2014-03-28 2015-10-01 Intel Corporation Piégeage selon le rapport de forme (art) pour fabriquer des dispositifs à semi-conducteur verticaux
FR3098011B1 (fr) * 2019-06-28 2022-07-15 Aledia Procede de fabrication de microfils ou nanofils

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0544408A2 (fr) * 1991-10-28 1993-06-02 Xerox Corporation Dispositifs à semi-conducteurs émetteurs de lumière à confinement quantique
US20040175844A1 (en) * 2002-12-09 2004-09-09 The Regents Of The University Of California Sacrificial template method of fabricating a nanotube
US20050006673A1 (en) * 2003-04-04 2005-01-13 Btg International Limited Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them
US20050161662A1 (en) * 2001-03-30 2005-07-28 Arun Majumdar Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
WO2006135336A1 (fr) * 2005-06-16 2006-12-21 Qunano Ab Transistor a nanofil semi-conducteur

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1420463A4 (fr) * 2001-08-22 2008-11-26 Sony Corp Element semiconducteur au nitrure et procede de production de cet element
US20040003839A1 (en) * 2002-07-05 2004-01-08 Curtin Lawrence F. Nano photovoltaic/solar cells
KR100553317B1 (ko) * 2004-04-23 2006-02-20 한국과학기술연구원 실리콘 나노선을 이용한 실리콘 광소자 및 이의 제조방법
JP4740795B2 (ja) * 2005-05-24 2011-08-03 エルジー エレクトロニクス インコーポレイティド ロッド型発光素子及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0544408A2 (fr) * 1991-10-28 1993-06-02 Xerox Corporation Dispositifs à semi-conducteurs émetteurs de lumière à confinement quantique
US20050161662A1 (en) * 2001-03-30 2005-07-28 Arun Majumdar Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US20040175844A1 (en) * 2002-12-09 2004-09-09 The Regents Of The University Of California Sacrificial template method of fabricating a nanotube
US20050006673A1 (en) * 2003-04-04 2005-01-13 Btg International Limited Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them
WO2006135336A1 (fr) * 2005-06-16 2006-12-21 Qunano Ab Transistor a nanofil semi-conducteur

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BINDAL A. ET AL.: "The impact of silicon nano-wire technology on the design of single-work-function CMOS transistor and circuits", NANOTECHNOLOGY, vol. 17, 2006, pages 4340 - 4351, XP020104037 *
BRYLLERT T. ET AL.: "Vertical wrap-gated nanowire transistors", NANOTECHNOLOGY, vol. 17, 2006, pages S227 - S230, XP020103764 *
See also references of EP2095426A4 *

Also Published As

Publication number Publication date
WO2008079077A2 (fr) 2008-07-03
EP2095426A2 (fr) 2009-09-02
EP2095426A4 (fr) 2012-10-10

Similar Documents

Publication Publication Date Title
WO2008079077A3 (fr) Structure nanoélectronique et procédé de production associé
WO2009071595A3 (fr) Dispositif a circuit integre et n/mems encapsule et procede de realisation
WO2008057671A3 (fr) Dispositif électronique incluant une structure conductrice s'étendant d'un bout à l'autre d'une couche isolante enterrée
TWI260056B (en) Module structure having an embedded chip
WO2009146007A3 (fr) Ensemble microélectronique contenant des puces en silicium pour interconnexions à haute densité et son procédé de fabrication
TW200725880A (en) Semiconductor piezoresistive sensor and operation method thereof
WO2007095061A3 (fr) Dispositif comprenant des nanocristaux semi-conducteurs et une couche comprenant un matériau organique dopé et procédés correspondant
WO2008090718A1 (fr) Cellule de batterie solaire, réseau de batteries solaires, module de batterie solaire et procédé de fabrication d'un réseau de batteries solaires
WO2008099863A1 (fr) Semi-conducteur, dispositif à semi-conducteur et dispositif de circuit à transistor complémentaire
WO2008107205A3 (fr) Module solaire commuté en série en face avant
EP4372824A3 (fr) Dispositif semi-conducteur et son procédé de fabrication
GB0229653D0 (en) Electrical connection of optoelectronic devices
TW200711194A (en) Organic based device and method for manufacture thereof
TW200608456A (en) Nanowire device with (111) vertical sidewalls and method of fabrication
TW200620657A (en) Recessed semiconductor device
ATE535019T1 (de) Verfahren zur herstellung einer waferanordnung mit mittels pn-übergang isolierten vias
WO2010013956A3 (fr) Cellule solaire, procédé de fabrication associé et module de cellule solaire
WO2007073601A8 (fr) Structure de pixels pour dispositif electroluminescent a semi-conducteur
EP2045840A3 (fr) Carte de circuit avec anneau de garde
EP2068366A3 (fr) Dispositif semiconducteur et méthode pour sa fabrication
TW200727497A (en) Dielectric isolation type semiconductor device and manufacturing method therefor
TW200503064A (en) Method for manufacturing semiconductor package
WO2008093789A1 (fr) Dispositif semi-conducteur bipolaire, procédé de fabrication du dispositif semi-conducteur bipolaire et procédé de commande de tension zener
TW200501384A (en) Semiconductor carrier film, and semiconductor device and liquid crystal module using the same
WO2009020240A3 (fr) Dispositif à semi-conducteur et procédé servant à fabriquer celui-ci

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07861100

Country of ref document: EP

Kind code of ref document: A2

REEP Request for entry into the european phase

Ref document number: 2007861100

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2007861100

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 4112/DELNP/2009

Country of ref document: IN

NENP Non-entry into the national phase

Ref country code: DE