WO2007142289A1 - 蛍光体及びその製造方法並びにそれを用いた照明器具 - Google Patents
蛍光体及びその製造方法並びにそれを用いた照明器具 Download PDFInfo
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- WO2007142289A1 WO2007142289A1 PCT/JP2007/061529 JP2007061529W WO2007142289A1 WO 2007142289 A1 WO2007142289 A1 WO 2007142289A1 JP 2007061529 W JP2007061529 W JP 2007061529W WO 2007142289 A1 WO2007142289 A1 WO 2007142289A1
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- powder
- phosphor
- heating
- sialon
- diameter
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- 239000000463 material Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title description 21
- 230000008569 process Effects 0.000 title description 3
- 239000000843 powder Substances 0.000 claims abstract description 136
- 239000002245 particle Substances 0.000 claims abstract description 68
- 238000009826 distribution Methods 0.000 claims abstract description 49
- 239000002994 raw material Substances 0.000 claims abstract description 34
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 24
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000012298 atmosphere Substances 0.000 claims abstract description 12
- 238000000790 scattering method Methods 0.000 claims abstract description 12
- 230000001590 oxidative effect Effects 0.000 claims abstract description 10
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000002156 mixing Methods 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 103
- 238000010438 heat treatment Methods 0.000 claims description 62
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 22
- 229910001940 europium oxide Inorganic materials 0.000 claims description 21
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 12
- 239000007858 starting material Substances 0.000 claims description 12
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 10
- 229910052582 BN Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000006104 solid solution Substances 0.000 claims description 6
- -1 aluminum compound Chemical class 0.000 abstract description 6
- 230000007423 decrease Effects 0.000 abstract description 6
- 230000001186 cumulative effect Effects 0.000 abstract description 3
- 238000007561 laser diffraction method Methods 0.000 abstract description 2
- 150000002178 europium compounds Chemical class 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 230000005284 excitation Effects 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 21
- 238000005259 measurement Methods 0.000 description 19
- 238000010304 firing Methods 0.000 description 18
- 238000002189 fluorescence spectrum Methods 0.000 description 14
- 239000000203 mixture Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000000634 powder X-ray diffraction Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 101001012040 Pseudomonas aeruginosa (strain ATCC 15692 / DSM 22644 / CIP 104116 / JCM 14847 / LMG 12228 / 1C / PRS 101 / PAO1) Immunomodulating metalloprotease Proteins 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
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- 238000004062 sedimentation Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910002795 Si–Al–O–N Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- QNDQILQPPKQROV-UHFFFAOYSA-N dizinc Chemical compound [Zn]=[Zn] QNDQILQPPKQROV-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PVDYMOCCGHXJAK-UHFFFAOYSA-H europium(3+);oxalate Chemical compound [Eu+3].[Eu+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O PVDYMOCCGHXJAK-UHFFFAOYSA-H 0.000 description 1
- CQQZFSZWNXAJQN-UHFFFAOYSA-K europium(3+);trihydroxide Chemical compound [OH-].[OH-].[OH-].[Eu+3] CQQZFSZWNXAJQN-UHFFFAOYSA-K 0.000 description 1
- GAGGCOKRLXYWIV-UHFFFAOYSA-N europium(3+);trinitrate Chemical compound [Eu+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GAGGCOKRLXYWIV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Definitions
- the present invention relates to a phosphor, a method of manufacturing the same, and a lighting fixture using the same. More specifically, the present invention relates to a phosphor composed of ⁇ -sialon that emits visible light when excited by ultraviolet light or blue light, a method for manufacturing the phosphor, and a lighting device such as a white light emitting diode using the phosphor. .
- Phosphors using a silicate, phosphate, aluminate, or sulfide as a base material and using a transition metal or a rare earth metal in the light emission center are widely known.
- white light-emitting diodes (hereinafter referred to as white LEDs) that are excited by an excitation source having high energy such as ultraviolet light or blue light to emit visible light have attracted attention and have been developed. Progressing.
- the above-described conventional phosphor has a problem that the luminance of the phosphor is lowered as a result of exposure to an excitation source.
- nitride and oxynitride phosphors have recently been attracting attention because they have a stable crystal structure and can shift excitation light and light emission to the longer wavelength side.
- Ca (Si, Al) N, CaSiAIN, or ⁇ -type sialon activated with rare earth elements is also available.
- Type sialon is a solid solution of type nitride nitride, with substitutional solid solution of A1 at the Si position and ⁇ at the N position. Since there are two formula atoms in the unit cell, Si Al ON is used as a general formula.
- the composition Z is 0 to 4.2, and the solid solution range is
- ⁇ -sialon can be generally obtained by heating with silicon oxide and aluminum nitride or aluminum oxide and aluminum nitride in addition to silicon nitride.
- Eu ions When Eu ions are sufficiently dissolved in the crystal structure of ⁇ -sialon, they are excited by ultraviolet to blue light and emit green to yellow light of 500 to 550 nm.
- the white light of a white LED requires a combination of a plurality of colors unlike a monochromatic light, and a general white LED has a purple color as disclosed in Patent Documents 9 to 10 for example. It consists of a combination of an external LED or blue LED and a phosphor that emits visible light using these LEDs as an excitation source. Therefore, if the intensity of the light emitted from the phosphor is small, the intensity of the white light emitted from the LED also decreases.
- white light is often used as illumination light to illuminate an object brightly. Therefore, when white LEDs are used as backlights for display devices such as liquid crystal devices and lighting equipment for general indoor and outdoor lighting, it is important to emit white light with sufficient intensity.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2002-363554
- Patent Document 2 Japanese Patent Laid-Open No. 2003-336059
- Patent Document 3 Japanese Patent Laid-Open No. 2003-124527
- Patent Document 4 Japanese Unexamined Patent Application Publication No. 2003-206481
- Patent Document 5 Japanese Unexamined Patent Application Publication No. 2004-186278
- Patent Document 6 Japanese Patent Application Laid-Open No. 2004-244560
- Patent Document 7 Japanese Unexamined Patent Publication No. 2005-255895
- Non-Patent Document 1 J. W. H. van Krebel On new rare-earth doped M-Si-Al-O-N materi als ", TU Eindhoven, The Netherlands, p. 145-161 (1998)
- Non-Patent Document 2 Proceedings of the 65th JSAP Academic Lecture Meeting (September 2004, Tohoku Studies) No. 3 p. 1282- 1284
- Non-Patent Document 3 Proceedings of the 52nd Joint Lecture on Applied Physics (March 2005, Saitama University) No. 3 p. 1615
- Patent Document 8 Japanese Unexamined Patent Publication No. 2005-255895
- Patent Document 9 JP-A-5-152609
- Patent Document 10 JP-A-7-99345
- Patent Document 11 Japanese Patent No. 2927279
- the decrease in the fluorescence intensity of the ⁇ -type sialon phosphor that causes a decrease in the emission intensity of the white LED is largely due to the particle size of the j3-type sialon phosphor. Fluorescence is generated when the excitation light absorbed by the phosphor is converted into fluorescence, but a portion of the excitation light is not absorbed and is reflected by the phosphor surface to become scattered light.
- the smaller the particle size of the phosphor the greater the surface area per unit mass of the phosphor. Therefore, even for the same mass of phosphor, the smaller the particle size, the more the excitation light is reflected from the phosphor surface and becomes scattered light. As a result, the excitation light absorbed by the phosphor decreases, and the intensity of the generated fluorescence also decreases.
- the conventional / 3-type sialon phosphor disclosed in Patent Document 8 has an average particle diameter adjusted to a range of 50 nm to 20 ⁇ m.
- the method for increasing the particle size is, for example, a method in which, when the powder after baking of ⁇ -sialon obtained by heating the raw material powder is pulverized, the powder is adjusted so that it becomes loose so that particles with a large particle size are likely to remain Conventionally, when the average particle size of the type sialon phosphor powder is increased, the dispersibility deteriorates when applied to a lighting fixture or the like, and color unevenness occurs.
- the present invention aims to solve the problems of the prior art, and the inventor has developed ⁇ -sialon.
- the method for adjusting the particle size of the phosphor comprising the above, by devising the heating conditions during firing, a ⁇ -sialon phosphor having a specific particle size distribution can be obtained, and the specific particle size distribution Therefore, the present inventors have found that the phosphor can solve the problems of the prior art and have completed the present invention.
- the phosphor of the present invention is represented by the general formula: Si Al O N
- the i3 type sialon is the base material, Eu is dissolved as the emission center, and the particle size distribution measured by the laser diffraction scattering method is 10% diameter (D) in the integrated fraction of 7 to 20 ⁇ m.
- the phosphor production method of the present invention includes a nitride silicon powder, an aluminum nitride powder, an aluminum oxide powder, or an aluminum-containing compound that decomposes by heating to produce aluminum oxide, a europium oxide powder, A step of mixing a starting material comprising a europium-containing compound that decomposes by heating to produce europium oxide to form a raw material powder, and heating the raw material powder in a nitrogen atmosphere or a non-oxidizing atmosphere to produce an i3-type support. And a step of forming a phosphor made of sialon powder, and the heating is maintained at a temperature of 1850 to 2050 ° C. for 9 hours or more.
- any of a nitride nitride powder, an aluminum nitride powder, an aluminum oxide powder, or an aluminum-containing compound that is decomposed by heating to produce aluminum oxide A process of mixing a europium oxide powder or a europium-containing compound that decomposes by heating to produce europium oxide and a powerful starting material into a raw material powder, and the raw material powder in a nitrogen atmosphere or a non-oxidizing atmosphere Heating to form a phosphor made of ⁇ -sialon powder, and heating is divided into at least two times, and the crushing operation is performed between multiple heating operations.
- the starting material contains 1.5 to 20% by mass of type sialon.
- the starting material is filled in a container of boron nitride material having a density of 1.75 g / cm 3 or more and heated.
- the lighting fixture of the present invention includes a phosphor and a light emitting light source, and the phosphor has the general formula: Si A1
- ⁇ -sialon represented by ON is used as the base material, and Eu is dissolved as the emission center.
- the particle size distribution measured by the laser diffraction scattering method shows that the 10% diameter (D) in the cumulative fraction is 7 to 20 xm and the 90% diameter (D) is 50 to 90 ⁇ m.
- the light emission source preferably emits ultraviolet light or visible light.
- the phosphor composed of sialon of the present invention is a phosphor composed of ⁇ -sialon containing Eu, and Eu functions as a light emission center because of the unique crystal structure possessed by the type sialon.
- this phosphor can be suitably used for various lighting fixtures, particularly white LEDs using blue LEDs or ultraviolet LEDs as a light source, alone or in combination with other phosphors.
- the phosphor of the present invention can be manufactured by applying a manufacturing method described in detail later.
- a conventional phosphor powder composed of ⁇ -sialon has a tendency to cause dispersibility and color unevenness when the particle diameter is increased in order to increase the fluorescence intensity.
- a phosphor powder having a large particle size and good dispersibility can be produced in a simple manner and thus at a low process cost, so it is inexpensive and has high fluorescence intensity. It is possible to provide a powdery ⁇ -sialon-powered phosphor with less color unevenness, that is, less performance degradation.
- the lighting fixture of the present invention uses the phosphor made of the / 3 type sialon. Since type sialon is thermally and chemically stable, phosphors made of type sialon have the characteristic that there is little change in luminance and long life even when used at high temperatures.
- Type sialon phosphor a blue LED capable of emitting visible light having a wavelength of 440 to 480 nm and an ultraviolet LED capable of emitting ultraviolet light having a wavelength of 350 to 410 nm are used as a light source.
- White light can be easily provided by combining light, type sialon phosphors and red and blue phosphors as necessary, such as backlights for display devices such as liquid crystal devices and general indoor and outdoor lighting. Applicable to various uses such as lighting equipment Noh.
- FIG. 1 is a schematic explanatory diagram of a lighting fixture (surface mount LED) according to an embodiment of the present invention.
- composition of the phosphor of ⁇ -sialon according to the present invention is represented by the general formula: Si Al O N
- the power to produce fluorescence characteristics is desirable because the emission characteristics can be obtained reliably if the Eu content is 0.05 to 0.3 atm%.
- the particle size distribution measured by the laser diffraction scattering method of the phosphor comprising ⁇ -sialon of the present invention has a 10% diameter (D) in a volume-based integrated fraction of 7 to 20 / im.
- An i3-type sialon phosphor powder having a diameter distribution width is obtained.
- the present inventors can eliminate the deterioration of dispersibility and the occurrence of uneven color when applied to a lighting fixture or the like, even if the phosphor powder has a large particle size.
- the present invention has been completed. That is, if the 10% diameter (D) is more than
- the 10% diameter (D) is from 3 to 15 x m
- the 90% diameter (D) is from 3 to 80 ⁇ m.
- a method for producing a phosphor comprising ⁇ -sialon according to the present invention produces aluminum oxide by decomposition with a silicon nitride powder, an aluminum nitride powder, an aluminum oxide powder, or heating.
- a raw material powder is used, in which the resulting aluminum-containing compound and the europium oxide powder or the europium-containing compound that decomposes by heating to produce europium oxide are blended and mixed according to the desired composition of ⁇ -sialon. Is.
- the raw material powder is heated in a nitrogen atmosphere or a non-oxidizing atmosphere to produce a phosphor made of ⁇ -sialon. Specifically, the raw material is heated at a temperature of 1850 to 2050 ° C.
- examples of the aluminum-containing compound that decomposes by heating to produce aluminum oxide include aluminum hydroxide and aluminum nitrate.
- examples of europium-containing compounds that decompose by heating to produce europium oxide include europium hydroxide, europium nitrate, and europium oxalate.
- the specific particle size distribution width is set, that is, the 10% diameter (D) in the volume-based integrated fraction in the particle size distribution is 7 to 20 ⁇ , and the 90% diameter (D) 50
- the specific method of ⁇ 90 / m is to set the holding temperature during heating and baking to 1850 to 2050 ° C. and the holding time to 9 hours or more.
- a suitable firing temperature has been defined as 1820-2200 ° C, an atmospheric pressure of 0.1 MPa to 100 MPa, etc. Only 2 hours and 8 hours were exemplified as examples without clear provisions (see Patent Document 8).
- the present inventors experimentally examined the heating conditions, and adopting a holding time of 9 hours or more when using a specific raw material, thereby making a phosphor composed of ⁇ -sialon having a specific particle size distribution. Is found to be obtained.
- the holding time during heating and firing is set at 9 o'clock.
- the upper limit of the holding time is not particularly defined, but even if it is held for an extremely long time, the effect of obtaining a specific particle size distribution width is no longer significantly improved, but rather the economic loss increases.
- the upper limit is preferably 48 hours.
- the pressure in the nitrogen atmosphere or non-oxidizing atmosphere during heating which is suitable for the production of the phosphor comprising ⁇ -sialon of the present invention, is preferably 0.3 to 4 MPa.
- heating of the raw material powder is performed at least twice, and the crushing operation is performed between a plurality of heating operations.
- the temperature, pressure and holding time of the nitrogen atmosphere or non-oxidizing atmosphere at the time of heating are 1350 ⁇ : 1700 ° C, 0 .:! ⁇ IMPa and 1 minute, respectively. ⁇ 12 hours is preferred.
- the fired product taken out after cooling is crushed.
- the specific method of crushing is to pass through the sieve as it is depending on the degree of agglomeration, or to squeeze it by human power, to crush it manually using a roller, etc. You may pass through a sieve after.
- the heat treatment is performed again in an elementary atmosphere or a non-oxidizing atmosphere.
- the temperature is 1820 to 2200 ° C
- the pressure of the atmosphere is 0.
- the holding time is 1 hour or more, and the like.
- the starting material of the present invention is the mixed powder. If a mixed powder containing ⁇ to sialon in an amount of 1.5 to 20% by mass is used, the particle size distribution width is adjusted during heating and firing. Since it becomes easy, it is more preferable.
- the reason why the content of the type sialon is set to 1.5 to 20% by mass is that the effect of the present invention is stably obtained when the content is 1.5% by mass or more, and the above effect is sufficiently obtained when the content is 20% by mass or less. It is.
- the container filled with the starting material at the time of heating is required to be made of a material that does not react with any of the starting material, the fired product, and the atmospheric gas without being altered under the heating and holding conditions.
- a material is boron nitride (BN).
- BN boron nitride
- P—BN pyrolytic boron nitride
- the initial density (bulk density ilS R 1628-1997) is set to about 1. Og / cm 3 or less, and increasing the strength between the heated particles It is more preferable from the viewpoint of suppressing aggregation.
- the ⁇ -sialon obtained by the above-described operation is subjected to crushing and classification as necessary, so that the final particle size is adjusted.
- the specific method of crushing is through a sieve, or it is crushed by human power, crushed by a human force using a roller, etc., patted or crushed with a pestle, or crushed and loosened, a stone mill, a rough machine, a ball mill, a vibration mill or Force, which is a method using a pulverizer such as a jet mill, etc. If necessary, a sieve may be passed after these.
- Specific methods for classification include sieving, airflow classification, elutriation classification, and centrifugal sedimentation classification. Since the particle size tends to be smaller as the strength is crushed, the pulverization in the present invention is carried out through a sieve, or it is manually crushed, crushed by a roller, etc., patted or crushed with a pestle. A relatively mild disintegration is preferable, such as passing through a sieve if necessary after thawing.
- the particle size distribution of the phosphor comprising the ⁇ -sialon of the present invention can be adjusted by crushing and classification as necessary.
- the particle size distribution of the phosphor comprising ⁇ -sialon of the present invention measured by the laser diffraction diffraction method has a 10% diameter (D) of 7 to 20 / im in a volume-based integrated fraction and 90% Diameter (D) force 0-90 / im.
- the particle size distribution in addition to the laser diffraction scattering method, there are a centrifugal sedimentation light transmission method, an X-ray transmission method, a light shielding method, an electrical detection band method, and the like.
- the laser diffraction / scattering method was used because the operation was good and the operation was relatively simple.
- accurate particle size distribution cannot be measured if some of the particles remain attached to the surface of other particles. Therefore, the particles do not adhere to each other in the liquid, which is the particle medium.
- an appropriate dispersant is added to the liquid, and an ultrasonic wave is further applied before measurement.
- Identification of the crystal structure of a phosphor composed of ⁇ -sialon can be performed using a powder X-ray diffractometer (XRD) or the like, and the emission intensity can be determined using a spectrofluorometer, for example, using a predetermined wave.
- XRD powder X-ray diffractometer
- a phosphor having a ⁇ -type sialon force is used in a luminaire composed of a light source and a phosphor force, and in particular, is irradiated with ultraviolet light or visible light containing a wavelength of 350 to 500 nm as an excitation source. Because it has emission characteristics with a peak at a wavelength in the range of 500 to 550 nm, white light can be easily obtained by combination with ultraviolet LED or blue LED and red and Z or blue phosphor as necessary. There is.
- the / 3 type sialon does not deteriorate even when exposed to high temperatures, has excellent heat resistance, and has excellent long-term stability in an oxidizing atmosphere and moisture environment. It has the feature that the instrument has high brightness and long life.
- the main application of lighting equipment that emits white light is light emission to illuminate an object by illuminating it, so a stable color tone is required to correctly reflect the color of the object. It is done. For this reason, not only the blue LED, which is a light source, but also ⁇ -sialon, which is a phosphor, is required to have a stable emission intensity with little variation.
- the luminaire of the present invention is configured by using at least one light-emitting light source and a phosphor comprising the ⁇ -sialon of the present invention.
- the lighting apparatus of the present invention includes an LED, a fluorescent lamp, and the like.
- an LED can be manufactured using the phosphor of the present invention by a known method described in Patent Documents 9 to 11 and the like. I can do it.
- a luminaire in addition to the method of using the phosphor of the type 3 sialon alone according to the present invention, a luminaire that emits a desired color by using in combination with a phosphor having other light emission characteristics. It can also be configured.
- a blue LED is used as an excitation source
- white light emission in a wide range of color temperatures is possible when a phosphor comprising the type sialon of the present invention is combined with a phosphor that emits yellow light.
- An example of such a phosphor is a model sialon in which Eu is dissolved.
- red phosphors such as CaSiAIN: Eu Therefore, the color reproducibility can be improved and the color rendering property can be improved.
- the backlight has a color reproducibility suitable for a display device such as a liquid crystal device, and lighting equipment such as various indoor / outdoor general lighting devices with excellent color rendering properties. Can be provided.
- This raw material powder was made into a cylindrical boron nitride container with a lid having an inner size of 14.8 cm in diameter and 13.8 cm in height (manufactured by Denki Kagaku Kogyo, N-1 grade, density 1.80 g / cm 3 ) was charged in an electric furnace with a single-bon heater and subjected to heat treatment for 12 hours at 1950 ° C in a pressurized nitrogen atmosphere of 0.9 MPa. The resulting product was a loose, agglomerated lump that could be loosened lightly with fingers wearing clean rubber gloves. After mild crushing in this way, it was passed through a sieve with an opening of 45 ⁇ . By these operations, 550 g of synthetic powder was obtained.
- the synthetic powder was a ⁇ -type sialon single phase.
- 10% diameter (D) in volume-based integrated fraction is 8.5 xm, The 90% diameter (D) was 63.2 m.
- the sample for distribution measurement was prepared according to the measurement conditions of silicon nitride in Table 1 of the appendix for raw shellfish IjJIS R 1629-1997.
- the fluorescence spectrum at a wavelength of 455 nm was measured, and the peak intensity (emission intensity) and peak wavelength of the spectrum were determined. Since the peak intensity varies depending on the measurement device and conditions, a relative comparison was made between the examples and comparative examples measured under the same conditions. The results are shown in Table 2.
- the peak intensity of the fluorescence spectrum of the ⁇ -sialon phosphor of Example 1 excited by 455 nm was 665 (arbitrary scale), and the peak wavelength was 541 nm.
- Example 2 the same raw material powder as that used in Example 1 was used, and the synthesis was performed in the same manner as in Example 1 except that these self-bonding and firing conditions were changed as shown in Table 1.
- Get powder As shown in Table 1, the raw material powder used in Example 2 was ⁇ -type silicon nitride powder 94.2% by mass, aluminum nitride powder 3.5% by mass, aluminum oxide powder 1.0% by mass, europium oxide powder 1. It was blended so that it might be 3% by mass, so that the total amount was 1. Okg. In this case, the Eu content is 0.14 atm. /. It is.
- Firing conditions were as follows: heat treatment was performed at 1 900 ° C for 24 hours in a pressurized nitrogen atmosphere of 0.9 MPa.
- the raw material powder used in Example 3 was a diamond silicon nitride powder 93.9% by mass, aluminum nitride powder 3.5% by mass, aluminum oxide powder 1.0% by mass, europium oxide powder 1. 6 mass % So that the total amount becomes 1.0 kg. In this case, the Eu content is 0.18 atm%.
- the baking conditions were a heat treatment at 1850 ° C for 36 hours in a pressurized nitrogen atmosphere of 0.5 MPa.
- the raw material powder used in Example 4 is a diamond silicon nitride powder 93.0% by mass, aluminum nitride powder 4.0% by mass, aluminum oxide powder 2.2% by mass, europium oxide powder 0.8 mass % So that the total amount becomes 1.0 kg. In this case, the Eu content is 0.09 atm%.
- the firing conditions were as follows: 2. Heat treatment was performed at 2000 ° C for 10 hours in a pressurized nitrogen atmosphere of OMPa.
- the raw material powder used in Comparative Example 1 was ⁇ -type silicon nitride powder 95.5 mass%, aluminum nitride powder 3.3 mass%, aluminum oxide powder 0.4 mass%, europium oxide powder 0.8 mass % So that the total amount is 1. Okg. In this case, the Eu content is 0.09 atm%.
- the firing conditions were heat treatment at 1950 ° C for 8 hours in a pressurized nitrogen atmosphere of 0.9 MPa.
- the raw material powder used in Comparative Example 2 was ⁇ -type silicon nitride powder 93.9 mass%, aluminum nitride powder 3.5 mass%, aluminum oxide powder 1.0 mass%, europium oxide powder 1.6 mass % So that the total amount is 1. Okg. In this case, the Eu content is 0.18 atm%.
- the firing conditions were heat treatment at 1850 ° C for 8 hours in a pressurized nitrogen atmosphere of 0.5 MPa.
- the peak intensity of the fluorescence spectrum by nm excitation was 643, and the peak wavelength was 538 nm.
- the peak intensity of the fluorescence spectrum of the j3 type sialon phosphor obtained in Example 3 by excitation at 455 nm was 692, and the peak wavelength was 536 nm.
- the peak intensity of the fluorescence vector obtained by excitation at 455 nm of the ⁇ -type sialon phosphor obtained in Comparative Example 1 was 496, and the peak wavelength was 540 nm.
- the peak intensity of the fluorescent vector obtained by excitation of 455 nm of the ⁇ -type sialon phosphor obtained in Comparative Example 2 was 481, and the peak wavelength was 533 nm.
- Example 5 the same raw material powder as the raw material powder used in Example 1 was formed into a cylindrical boron nitride container with a lid having an inner size of 14.8 cm x 13.8 cm in height (manufactured by Electrochemical Industry, N — 1 grade, density 1.78 g / cm 3 ) was charged to 560 g, and heat treatment was performed at 1500 ° C for 1 hour in a pressurized nitrogen atmosphere of 0.9 MPa in an electric furnace of a carbon heater. After cooling, the baked product taken out from the container is passed through a nylon sieve with a mesh opening of 833 xm (20 mesh), and then refilled in the container. 0.9 hours in a pressurized nitrogen atmosphere at 1950 ° C for 8 hours The heat treatment was performed.
- the resulting product was a loose, agglomerated mass that could be lightly loosened with fingers wearing clean rubber gloves. After mild crushing in this way, it was passed through a sieve with an opening of 45 xm. By these operations, 450 g of synthetic powder was obtained.
- the synthesized powder was a single phase of ⁇ -sialon.
- D was 9.2 xm and D was 71.
- the fluorescence spectrum was measured, and the peak intensity (emission intensity) and peak wavelength of the spectrum were determined.
- the peak intensity of the fluorescence spectrum of the ⁇ -sialon phosphor obtained in Example 5 by excitation at 455 nm was 720, and the peak wavelength was 540 nm.
- Synthetic powders were obtained by firing twice in the same manner as in Example 5 except that the raw material powder blends and firing conditions shown in Examples 6 to 8 and Comparative Example 3 were as shown in Table 3.
- the raw material powder used in Example 6 was a diamond silicon nitride powder 94.2% by mass, aluminum nitride powder 3.5% by mass, aluminum oxide powder 1.0% by mass, europium oxide powder 1. It was blended so that it might be 3% by mass, so that the total amount was 1. Okg. In this case, the Eu content is 0.14 atm. /. It is.
- the firing conditions were a heating treatment at 1600 ° C for 2 hours in a pressurized nitrogen atmosphere with the first heating condition of 0.8 MPa, and a second heating condition in a pressurized nitrogen atmosphere of 0.9 MPa. The heat treatment was performed at 1900 ° C for 24 hours.
- the raw material powder used in Example 7 was ⁇ -type silicon nitride powder 93.9 mass%, aluminum nitride powder 3.5 mass%, aluminum oxide powder 1.0 mass%, europium oxide powder 1.6 mass % So that the total amount is 1. Okg. In this case, the Eu content is 0.18 atm%.
- the firing conditions were the first heating condition in a pressurized nitrogen atmosphere at 0.5 MPa and a heat treatment at 1400 ° C for 4 hours, and the second heating condition was in a pressurized nitrogen atmosphere at 0.5 MPa. The heat treatment was performed at 1850 ° C for 36 hours.
- the raw material powder used in Example 8 was a diamond silicon nitride powder 93.0% by mass, aluminum nitride powder 4.0% by mass, aluminum oxide powder 2.2% by mass, europium oxide powder 0.8 mass % So that the total amount is 1. Okg. In this case, the Eu content is 0.09 atm%.
- Firing conditions are as follows: the first heating condition is a pressurized nitrogen atmosphere of 1.5 MPa The heat treatment was performed at 1600 ° C for 1 hour, and the second heating condition was 2. Heat treatment at 2000 ° C for 10 hours in a pressurized nitrogen atmosphere of OMPa.
- the raw material powder used in Comparative Example 3 was ⁇ -type silicon nitride powder 95.5 mass%, aluminum nitride powder 3.3 mass%, aluminum oxide powder 0.4 mass%, europium oxide powder 0.8 mass % So that the total amount is 1. Okg. In this case, the Eu content is 0.
- Firing conditions are as follows: 1st heating condition is 0.9MPa in pressurized nitrogen atmosphere, 1800 ° C for 1 hour, 2nd heating condition is in 0.9MPa pressurized nitrogen atmosphere And heat treatment at 1950 ° C. for 12 hours.
- the peak intensity of the fluorescent spectrum by excitation is 706, and the peak wavelength is 539 nm.
- D was 19. l / im, and D was 87.
- D was 8. l / im, and D was 62.
- Example 9 a synthetic powder was obtained in the same manner as in Example 1, except that 3% by mass of type sialon powder was added to the raw material powder used in Example 1. In the same manner as in Example 1, powder X diffraction, particle size distribution and fluorescence intensity were measured. The results are shown in Table 2, Example 9 The synthetic powder obtained in (1) was a ⁇ -type sialon single phase. This ⁇ -sialon had a particle size distribution measurement of D of 10.8 ⁇ and ⁇ of 73.3 / im. Type sialo obtained in Example 9
- the peak intensity of the fluorescence spectrum of the phosphor obtained by excitation at 455 nm was 716 and the peak wavelength was 541 nm.
- Example 10 a synthetic powder was obtained in the same manner as in Example 5 except that 10% by mass of the j3 type sialon powder was added to the raw material powder used in Example 5. In the same manner as in Example 5, powder X-ray diffraction, particle size distribution and fluorescence intensity were measured. As shown in Table 2, the synthetic powder obtained in Example 10 was a ⁇ -type sialon single phase. According to the particle size distribution measurement of the / 3 type sialon obtained in Example 10, D was 12.9 x m, and D was 80.2 ⁇ m. This / 3 type
- the peak intensity of the fluorescence spectrum obtained by excitation of the sialon phosphor at 455 nm was 745, and the peak wavelength was 540 nm.
- a synthetic powder was obtained as shown in Table 1, except that a cylindrical pyrolytic boron nitride container (manufactured by Shin-Etsu Chemical Co., Ltd., density 2.l Og / cm 3 ) was used. Further, in the same manner as in Example 1, powder X diffraction, particle size distribution, and fluorescence intensity were measured. As shown in Table 2, the synthetic powder obtained in Example 11 was a single-phase sialon single phase. According to the particle size distribution measurement of the type sialon of Example 11, D was 10. l / im and D was 68.1 ⁇ m. This ⁇
- the peak intensity of the fluorescence spectrum of the type sialon phosphor excited by 455 nm was 725, and the peak wavelength was 541 nm.
- a synthetic powder was obtained in the same manner as in Example 1 except that a cylindrical boron nitride container with a density of 1.60 gZcm 3 (manufactured by Denki Kagaku Kogyo, NB-1000 grade) was used. . Further, in the same manner as in Example 1, powder X diffraction, particle size distribution, and fluorescence intensity were measured. As shown in Table 2, the synthesized powder obtained in Comparative Example 4 was a / 3 type sialon single phase. D is 6.7 zm and D is 44.6 ⁇ m by the particle size distribution measurement of the j3 type sialon of Comparative Example 4.
- ⁇ -sialon phosphor 1 Og obtained in Examples 1 to 11 and Comparative Examples 1 to 4 was added to 100 g of water with an epoxysilane coupling agent (Shin-Etsu Silicone Co., Ltd., KBE402). While standing overnight. Then, an appropriate amount of the above sialon phosphor treated with a filtered and dried silane coupling agent was kneaded with 10 g of epoxy resin (NLD _ SL _ 2 101) manufactured by Sanurec Co., Ltd. Then, the resin was heated and cured at 110 ° C. to produce surface-mounted LEDs of Examples 12 to 22 and Comparative Examples 5 to 8. Table 4 shows the lamp efficiency obtained by measuring the emission spectrum of the light generated when a current of 10 mA is applied to this.
- FIG. 1 shows the structure of the surface-mounted LED (white LED).
- the white LED is connected to the conductive terminal 6 and the blue LED chip 1 is installed at the bottom of the container 5, the blue LED chip 1 is connected to the other conductive terminal 7 with the wire 3, and then the sialon fluorescent light is connected.
- the body 2 and the sealing resin (epoxy resin) 4 are heated and cured. The emission spectrum of the light generated by applying a current of 10 mA to this surface-mounted LED was measured.
- the LED lamp efficiencies (Lm / W) of Examples 12, 13, and 14 were 42.1, 40.6, and 46.2, respectively.
- Example 15, 16 and 17 LED lamp efficiency (Lm / W) were 44. 4, 50. 3, 49. 1 respectively.
- Examples 18, 19, and 20 The LED lamp efficiencies (Lm / W) were 52. 4, 44. 8, and 50. 8, respectively.
- the lamp efficiencies (Lm / W) of the LEDs of Examples 21 and 22 were 54.6 and 51.3, respectively.
- the phosphor of ⁇ -sialon according to the present invention has a peak in a region of 500 to 550 nm by excitation light of 350 to 500 nm due to its specific crystal structure and composition, and specific particle size distribution. Since it has the light emission characteristics, it is suitable as a luminaire that uses ultraviolet light or blue light as a light source, particularly as a phosphor for white LED that uses ultraviolet LED or blue LED as a light source, and is very useful industrially.
- the method for producing a sialon phosphor of the present invention is extremely useful industrially because a phosphor powder comprising a sialon having a high fluorescence intensity can be provided simply and at a low cost.
- the lighting fixture of the present invention uses a powdered phosphor made of a type sialon having a stable color tone of light emission color, excellent heat resistance, and little change in temperature of light emission characteristics. It is possible to project colors correctly and maintain high brightness for a long time, which is industrially useful.
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Abstract
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US12/303,959 US8080174B2 (en) | 2006-06-09 | 2007-06-07 | Fluorescent material, process for producing the same and illuminator employing the same |
KR1020087031448A KR101083504B1 (ko) | 2006-06-09 | 2007-06-07 | 형광체 및 그 제조 방법 및 그것을 이용한 조명기구 |
CN2007800213896A CN101466813B (zh) | 2006-06-09 | 2007-06-07 | 荧光粉及其制备方法以及使用该荧光粉的照明器具 |
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- 2007-06-07 US US12/303,959 patent/US8080174B2/en active Active
- 2007-06-07 CN CN2007800213896A patent/CN101466813B/zh not_active Expired - Fee Related
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Cited By (10)
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EP2418265A1 (en) * | 2009-04-06 | 2012-02-15 | Sharp Kabushiki Kaisha | Group of phosphor particles, light-emitting device using same, and liquid crystal television receiver |
EP2418265A4 (en) * | 2009-04-06 | 2012-09-19 | Sharp Kk | PHOSPHORESCENT PARTICLE GROUP, LIGHT EMITTING DEVICE USING THE SAME, AND LIQUID CRYSTAL TELEVISION RECEIVER |
US9000664B2 (en) | 2009-04-06 | 2015-04-07 | Sharp Kabushiki Kaisha | Phosphor particle group, light emitting apparatus using the same, and liquid crystal display television |
JP2010241995A (ja) * | 2009-04-08 | 2010-10-28 | Denki Kagaku Kogyo Kk | β型サイアロン蛍光体とその製造方法、およびその用途 |
US20120228551A1 (en) * | 2009-11-10 | 2012-09-13 | Denki Kagaku Kogyo Kabushiki Kaisha | Beta-sialon, method for producing same and light-emitting device using same |
US9139769B2 (en) * | 2009-11-10 | 2015-09-22 | Denki Kagaku Kogyo Kabushiki Kaisha | Beta-sialon, method for producing same and light-emitting device using same |
WO2011105305A1 (ja) | 2010-02-25 | 2011-09-01 | 電気化学工業株式会社 | β型サイアロン蛍光体、その用途及びβ型サイアロン蛍光体の製造方法 |
WO2012032818A1 (ja) * | 2010-09-09 | 2012-03-15 | 電気化学工業株式会社 | Eu固溶β型サイアロンの製造方法 |
JP2019104773A (ja) * | 2017-12-08 | 2019-06-27 | デンカ株式会社 | β型サイアロン蛍光体の製造方法 |
JP6997611B2 (ja) | 2017-12-08 | 2022-01-17 | デンカ株式会社 | β型サイアロン蛍光体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5122765B2 (ja) | 2013-01-16 |
CN101466813A (zh) | 2009-06-24 |
US20100219741A1 (en) | 2010-09-02 |
EP2045308A1 (en) | 2009-04-08 |
KR101083504B1 (ko) | 2011-11-16 |
US8080174B2 (en) | 2011-12-20 |
JP2007326981A (ja) | 2007-12-20 |
KR20090028724A (ko) | 2009-03-19 |
EP2045308A4 (en) | 2010-12-01 |
EP2045308B1 (en) | 2016-08-10 |
CN101466813B (zh) | 2013-04-03 |
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