WO2004025717A1

WO2004025717A1 - Device and method for polishing edges of semiconductor wafer

Info

Publication number: WO2004025717A1
Application number: PCT/JP2002/012241
Authority: WO
Inventors: Hisatomo Ohno; Yasushi Yoshizawa
Original assignee: Nihon Micro Coating Co., Ltd.
Priority date: 2002-09-10
Filing date: 2002-11-22
Publication date: 2004-03-25
Also published as: JP2004103825A; TW200404336A

Abstract

A device and a method for polishing the edges of a semiconductor wafer capable of continuously removing sagging with a same polishing tape irrespective of the type of a material forming the sagging formed at the edges of the semiconductor wafer without contaminating or dissolving the surface of a film during polishing, the polishing device (10) comprising a wafer holding part (24) for rotatably holding the semiconductor wafer (28), a head (11) having a pad (12) for pressing the surface of the polishing tape (31) with an abrasive grain fixing layer formed on the surface thereof against the edges of the semiconductor wafer (28), a tape feed means for feeding and winding up the polishing tape (31) to and from the surface of the pad (12), a nozzle (23) for feeding polishing fluid to the surface of the polishing tape (31), and turning means (21, 22) for turning the head (11) so that the surface of the pad (12) moves (R2) along the edges of the semiconductor wafer (28).

Description

Specification

Semiconductor wafer edge polishing apparatus and method

The present invention relates to a polishing apparatus and a polishing method for removing sagging formed on an edge of a semiconductor wafer in a semiconductor device wafer manufacturing process.

Background art

Semiconductor device wafers are manufactured by stacking an oxide film, a nitride film, a metal film, etc. on the surface of the semiconductor wafer, which is the substrate, using film formation techniques known in the semiconductor manufacturing field such as sputtering, CVD, and etching. Is done.

Materials such as oxides, nitrides, and metals that make up each film adhere to the edge of the semiconductor wafer during film formation and form sagging. The sag is unnecessary as wiring formed on the semiconductor wafer, and the sag formed at the edge is easily peeled off, and is a source of contamination on the film surface. For this reason, polishing for removing sagging formed at the edge of the semiconductor wafer is performed.

Conventionally, the removal of sagging formed at the edge of the semiconductor wafer has conventionally consisted of a cylindrical drum with a polishing tape attached to the peripheral side surface, and a holding table that holds the semiconductor wafer at an angle to the side surface of the drum. Polishing equipment (See, for example, Japanese Patent Application Laid-Open No. H10-70080 (Steps 017, 018, FIG. 3)). In such a conventional polishing apparatus, the edge of the semiconductor wafer is polished by rotating the semiconductor wafer held on the holding table at an angle to the side surface of the drum, moving the holding table toward the rotating drum, and rotating the semiconductor wafer. The polishing liquid is supplied near the edge of the wafer, and the semiconductor wafer is pressed against the surface of the polishing tape around the rotating drum.

However, in the polishing using such a conventional polishing apparatus, since the polishing tape is stuck around the drum, the dripping formed on the edge of the semiconductor wafer in the previous and current polishing is performed. If the same type of material is used, if the same polishing tape is used continuously, the material that adhered to the polishing tape during the previous polishing will scatter on the surface of the film made of a different type of material And contaminate the membrane surface. For this reason, it is necessary to change the polishing tape attached to the periphery of the drum for each type of material that composes the dripping, and it is not possible to remove dripping continuously with the same polishing tape. It takes time and effort.

When a polishing slurry containing abrasive grains is used as the polishing liquid, the polishing slurry supplied near the edge of the semiconductor wafer is moved from the polishing tape surface to the surface of the film on the semiconductor wafer by the centrifugal force caused by the rotation of the drum. Scattered and adhered to the surface of the membrane, contaminating the surface of the membrane. Problems arise.

Furthermore, when a reaction solution containing a chemical solution that dissolves sagging is used as the polishing solution, the polishing solution supplied near the edge of the semiconductor wafer due to the centrifugal force caused by the rotation of the drum similarly to the polishing slurry described above. Scatters from the polishing tape surface to the surface of the film on the semiconductor wafer, adheres to the surface of the film, and dissolves the surface of the film.

Accordingly, an object of the present invention is to provide a polishing apparatus and method capable of continuously removing sagging with the same polishing tape irrespective of the type of material constituting sagging formed on the edge of a semiconductor wafer.

Another object of the present invention is to provide a polishing apparatus and a polishing method capable of removing sagging without contaminating or dissolving the surface of the film during polishing.

Summary of the Invention

The present invention is a polishing apparatus and method for polishing a semiconductor wafer edge using a polishing tape having a surface having an abrasive grain fixed layer formed thereon in order to remove sagging formed on an edge of the semiconductor wafer.

A polishing apparatus according to the present invention for achieving the above object holds a semiconductor wafer, rotates a semiconductor wafer, and a pad for pressing a surface of a polishing tape against an edge of the semiconductor wafer held by the wafer holding section. A head having a polishing tape on the surface of the pad, Tape supply means for winding the polishing tape sent on the surface of the pad, polishing liquid supply means for supplying a polishing liquid to the surface of the polishing tape sent on the surface of the pad, and the surface of the pad are: Consists of a head turning means for turning the head so as to move in a circular motion along the edge of the semiconductor wafer from the back side of the semiconductor wafer to the front side or from the front side to the back side. .

The polishing apparatus of the present invention is characterized in that air is blown onto the surface on the center side of the semiconductor wafer held by the wafer holding unit, and air is supplied from an air supply means for flowing air from the center side of the semiconductor wafer toward the edge. Polishing of a wedge of a semiconductor wafer is performed using the above-described apparatus of the present invention.

First, a semiconductor wafer is held on a wafer holding unit and rotated. Preferably, the wafer holding unit includes a rotating shaft connected to an external motor, and a holding table fixed to an upper end of the rotating shaft. The holder has a plurality of holes communicating with an external vacuum pump. The semiconductor wafer is adsorbed on the holding table by placing the semiconductor wafer on the holding table and driving a vacuum pump, whereby the semiconductor wafer is held by the wafer holding unit. The semiconductor wafer held by the wafer holding unit is rotated by driving an external motor connected to a rotating shaft. Wafer holder Can be rotated continuously or intermittently.

Next, a polishing tape is sent over the surface of the pad, and the sent polishing tape is wound up on the surface of the pad. Preferably, the tape supply means has a tape sending section for detachably attaching a mouth of the polishing tape, and a tape winding section for winding the polishing tape. The polishing tape is pulled out from the roll attached to the tape feeding section, and the polishing tape is wound around the winding opening of the tape winding section through the surface of the pad. The take-up roller is connected to a motor, and by driving the motor, the polishing tape is fed onto the surface of the pad and taken up by the tape take-up unit. The polishing tape can be delivered over the surface of the pad continuously or intermittently. In this way, a new surface of the polishing tape can be appropriately fed onto the pad surface, so that the same polishing tape can be used irrespective of the type of material constituting the sag formed on the semiconductor wafer page. Continuously remove sagging.

Next, a polishing liquid is supplied to the surface of the polishing tape sent over the surface of the pad. Preferably, the polishing liquid supply means comprises a nozzle connected to the polishing liquid tank, and the nozzle is arranged above the surface of the polishing tape fed onto the surface of the pad. The polishing liquid is supplied to the surface of the polishing tape through this nozzle. In this way, the polishing liquid is supplied to the surface of the polishing tape that is sent onto the surface of the pad, so that the polishing liquid is not scattered, and It is supplied to the edge of the semiconductor wafer together with the tape. Thus, the polishing liquid is not supplied to a region other than the edge of the semiconductor wafer. Further, since the semiconductor wafer is rotating, centrifugal force due to this rotation acts on the polishing liquid supplied to the semiconductor wafer edge. This prevents the polishing liquid from entering the region other than the edge of the semiconductor wafer. Next, the surface of the polishing tape is pressed against the edge of the semiconductor wafer via the pad. Preferably, the back of the pad is attached to the tip of the piston cylinder shaft. The pad moves forward and backward in the longitudinal direction of the shaft by driving the piston cylinder. The pressing pressure of the polishing tape against the edge of the semiconductor wafer is performed by adjusting the amount of the advance and retreat.

Thus, the edge of the semiconductor wafer is polished.

In the polishing of the edge of a semiconductor wafer according to the present invention, the surface of the polishing tape is pressed against the edge of the semiconductor wafer via a pad, and the surface of the pad is moved along the edge of the semiconductor wafer to the back side of the semiconductor wafer. The head can be turned so that it moves in a circle from front to back or from front to back. While the head is pivoting, the surface of the polishing tape that is fed over the surface of the pad is constantly pressed against the edge of the semiconductor wafer. Preferably, the center of rotation of the head is near the point of contact between the edge of the semiconductor wafer and the polishing tape fed over the surface of the pad. Head Is connected to the motor, and by driving the motor, it turns in a circle about the center of this turn. The range and speed of the head turning can be changed or changed as appropriate by controlling the driving time of the motor. While turning the head, the surface of the polishing tape is pressed through the pad toward the edge of the semiconductor wafer by the shaft of the piston cylinder behind the pad. That is, during the rotation of the head, the edge of the semiconductor wafer is polished while the surface of the polishing tape is kept pressed against the edge of the semiconductor wafer via the pad.

In the polishing of the edge of the semiconductor wafer according to the present invention, the surface of the pad moves along the edge of the semiconductor wafer so as to draw a circle from the back side of the semiconductor wafer to the front side or from the front side to the back side. Then, the surface of the polishing tape is pressed against the edge of the semiconductor wafer through the pad, and the desired portion of the edge of the semiconductor wafer can be selectively polished. . Preferably, the center of this pivot is near the point of contact between the edge of the semiconductor wafer and the polishing tape fed over the surface of the pad. The head is connected to the motor, and by driving the motor, the head turns in a circle with respect to the center of the turning. While swiveling and tilting the head, the shaft of the piston cylinder behind the pad is retracted. When the pad is tilted to the desired angle, stop driving the motor connected to the head and stop turning the head. Stop. Then, the piston cylinder is driven to advance the shaft, and the surface of the polishing tape is pressed against the edge of the semiconductor wafer via the pad. Thus, the polishing tape can be selectively pressed against the desired position of the edge of the semiconductor wafer to polish the surface. That is, the surface of the polishing tape can be pressed against only the unnecessary dripping attached to the edge. Further, in polishing the edge of the semiconductor wafer according to the present invention, air may be blown from the center side of the semiconductor wafer toward the edge. The polishing liquid supplied to the surface of the polishing tape sent onto the surface of the pad is supplied to the edge of the semiconductor wafer together with the polishing tape as described above. Here, when a large amount of polishing liquid is supplied and the number of rotations of the semiconductor wafer is small, the polishing liquid may enter a region other than the edge of the semiconductor wafer. For this reason, by blowing air from the center side of the semiconductor wafer toward the edge, air pressure is applied to the polishing liquid supplied to the edge of the semiconductor wafer, and the polishing liquid is applied to a region other than the edge of the semiconductor wafer. Intrusion is prevented. Preferably, a nozzle connected to an external air source is arranged above the rotation center of the semiconductor wafer held by the wafer holding unit, and air is blown onto the rotation center of the semiconductor wafer through the nozzle. It flows from the center of rotation radially to the edge of the semiconductor wafer. Thus, during polishing, the polishing liquid does not scatter to the surface of the film in a region other than the edge of the semiconductor wafer, and does not contaminate or dissolve the surface of the film. In the present invention, a cooling liquid or a reaction liquid containing a chemical solution that dissolves dripping is used as the polishing liquid. Here, which of the cooling liquid and the reaction liquid is used as the polishing liquid is arbitrary. When a cooling liquid is used as the polishing liquid, the edge of the semiconductor wafer is polished mechanically, and when a reaction liquid is used, the edge of the semiconductor wafer is polished chemically and mechanically. The chemical solution can be appropriately selected according to the material constituting the dripping.

In the polishing according to the present invention, the first polishing may be performed first using a cooling liquid as a polishing liquid, and then the second polishing may be performed using a reaction liquid as a polishing liquid. Conversely, the first polishing using the reaction liquid may be performed first, and then the second polishing using the cooling liquid may be performed.

Since the present invention is configured as described above, it is possible to continuously remove the dripping with the same polishing tape irrespective of the type of the substance constituting the dripping formed on the edge of the semiconductor wafer, and to form the film during polishing. This has the effect of removing sagging without contaminating or dissolving the surface of the steel. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 (a) is a plan view of the device according to the present invention, and FIG. 1 (b) is a cross-sectional view taken along line AA of FIG. 1 (a).

2A is a cross-sectional view of the edge of the semiconductor wafer before polishing, and FIGS. 2B and 2C respectively show the surface of the polishing tape through a pad. FIG. 2 (d) is a cross-sectional view of the edge of the polished semiconductor wafer when pressed against the edge of the semiconductor wafer.

BEST MODE FOR CARRYING OUT THE INVENTION

The present invention is an apparatus and a method for polishing an edge of a semiconductor wafer by using a polishing tape having an abrasive grain fixed layer formed on a surface thereof in order to remove sagging formed on a semiconductor wafer edge.

As shown in FIG. 2 (a), the sag 30 is formed on the semiconductor wafer 28 at the time of film formation, and this is unnecessary as wiring formed on the semiconductor wafer 28. In addition, the dripping 30 formed on the edge is easily peeled off, and is a source of contamination on the surface of the film 29.

<Polishing Apparatus> As shown in FIGS. 1A and 1B, a polishing apparatus 10 of the present invention holds a semiconductor wafer 28 and a wafer holding section 24 for rotating the semiconductor wafer 28. The head 11 has a pad 12 for pressing the surface of the polishing tape 31 against the edge of the semiconductor wafer 28 held by the wafer holding portion 24, and the polishing tape 31 is fed onto the surface of the pad 12 A tape feeding unit (not shown) for unwinding, a tape winding unit (not shown) for winding the polishing tape 31 sent on the surface of the pad 12, and on the surface of the pad 12 A polishing liquid supply means (a nozzle denoted by reference numeral 23) for supplying a polishing liquid to the surface of the polishing tape 31 sent to the semiconductor wafer, and the surface of the pad 12 is moved along the edge of the semiconductor wafer 28 along with the semiconductor wafer. Back of 2 8 A head swiveling means (shown by reference numeral 21) for swiveling the head 11 so as to move in a circle from the side to the front side or from the front side to the back side (in the direction of arrow R2). The wafer holding part 24, which is composed of a shaft and a motor indicated by reference numeral 22, includes a rotating shaft 26 connected to an external motor (not shown) and an upper end of the rotating shaft 26. And a holding table 25 fixed to the section. The holding table 25 has a plurality of holes communicating with an external vacuum pump (not shown). The semiconductor wafer 28 is adsorbed to the holding table 25 by driving the vacuum pump by placing the semiconductor wafer 28 on the holding table 25 and held by the wafer holding section 24. The semiconductor wafer 28 held by the wafer holder 24 is rotated in the direction of the arrow R 1 by driving the external motor (not shown) to rotate the rotation shaft 26. Is done. The rotating shaft 26 can be rotated continuously or intermittently as appropriate. The head 11 includes first and second support plates 15 and 16 facing each other, and first, second, third and third parallel plates arranged between these support plates 15 and 16 respectively. It is composed of four rollers 17, 18, 19, 20 and a piston cylinder 13 fixed between these support plates 15, 16. The node 12 is fixed to the tip of the shaft 14 of the piston cylinder 13 and moves forward and backward in the longitudinal direction of the shaft 14 indicated by the arrow T by driving the piston cylinder 13 (toward the drawing). Left direction is forward Is the direction to move forward, and the right direction is the direction to reverse).

The surface of the pad 12 is arranged parallel to the axis of the shaft 21 fixed to the first support plate 15. This axis 21 is located near the point of contact between the edge of the semiconductor wafer 28 and the polishing tape 31 sent on the surface of the node 12 (slightly closer to the center of the semiconductor wafer 28 than the contact point). To position. The shaft 21 is connected to the motor 22. When the motor 22 is driven, the head 11 draws a circle with the piston 21 as the center of rotation, together with the piston cylinder 13 and the pad 12. Turn in the direction of arrow R2.

The head 11 can be turned as appropriate by driving the motor 22 and the head 11 can be turned continuously in the direction of the arrow R2. Can be swung in the direction of arrow R2 to remain tilted at the desired angle.

Here, the edge of the semiconductor wafer 28 can be polished by a combination of turning the head 11 and moving the pad 12 forward and backward. In other words, as shown in FIGS. 2B and 2C, the surface of the polishing tape 31 sent in the direction of arrow t is pressed against the edge of the semiconductor wafer 28 on the surface of the pad 12. As it is! By continuously turning the head 11 in the direction of arrow R2 with the dog 1, the droop 30 formed on the edge of the semiconductor wafer 28 can be removed. In a state where the pad 11 is separated from the semiconductor wafer 28 (not shown), the head 11 is moved to the arrow R 2 shown in the figure. To tilt the head 11 to the desired angle, move the piston cylinder 13 to the horse, advance the pad 12 and move the arrow on the surface of the node 12. By pressing the surface of the polishing tape 31 sent in the direction of t against the edge of the semiconductor wafer 28, the location of the page to be polished is selected, and the droop 30 formed on the edge of the semiconductor wafer 28 is removed. Can be removed. The pressing pressure of the polishing tape 31 against the edge of the semiconductor wafer 28 is performed by adjusting the amount of movement of the shaft 14 in the direction of arrow T.

In the example shown in FIG. 1, the tape sending section and the winding section (not shown) are provided outside. The tape sending section detachably mounts a roll (not shown) of the polishing tape 31. Then, the polishing tape 31 is pulled out from this mouth, passed through the surfaces of the first and second rollers 17, 18 and the pad 12, and further, the third and fourth rollers 19, 2 The polishing tape 31 is wound around a winding roller (not shown) of the tape winding section via a tape 0. The take-up roller is connected to a motor (not shown), and by driving the motor, the polishing tape 31 is moved in the direction of arrow t from an external tape sending unit. The polishing tape 31 sent out on the surface of the pad 12 via the first and second rollers 17 and 18 and sent on the surface of the pad 12 is divided into third and fourth rollers 19 and It is sent out in the direction of arrow t through 20 and wound up on an external tape winding unit. Polishing table Since the tape 31 can be continuously or intermittently fed onto the surface of the pad 12, the tape feeding section and the winding section as described above include the first and second support plates of the head 11. It may be provided between 15 and 16. That is, a roll mounting portion (not shown) for detachably mounting a roll of the polishing tape 31 is provided between the first and second support plates 15 and 16. A winding roller (not shown) for winding 1 may be arranged. With this configuration, the tape sending section and the winding section pivot with respect to the shaft 21 together with the head 11.

The nozzle 23 is fixed to the first support plate 15, one end of which is arranged so that the polishing liquid is supplied to substantially the center of the surface of the polishing tape 31 on the second roller 18. The end is connected to an external polishing liquid tank (not shown) via a flexible hose. The nozzle 23 pivots with the head 11 about the axis 21 so that the position of one end of the nozzle 23 is always fixed with respect to the second roller 18 and the nozzle 11 Even when swirled, the position of one end of the nozzle with respect to the second roller 18 does not change. As a result, the polishing liquid supplied to the surface of the polishing tape 31 is supplied to the page of the semiconductor wafer 28 together with the polishing tape 31, and the area other than the edge of the semiconductor wafer 28 (the area indicated by the symbol in FIG. 2) (J3 enormous surface indicated by 29). The illustrated polishing apparatus 10 further includes a nozzle 27 for blowing air toward the center of rotation of the semiconductor wafer 28 held on the wafer holding unit 24. Thus, air is blown from the inside to the outside edge of the semiconductor wafer 28.

As the polishing liquid, a cooling liquid or a reaction liquid containing a chemical solution that dissolves dripping 30 is used. Here, which of the cooling liquid and the reaction liquid is used as the polishing liquid is arbitrary. When a coolant is used, the edges of the semiconductor wafer 28 are mechanically polished. When a reaction solution is used, the edge of the semiconductor wafer 28 is chemically and mechanically polished.

The chemical can be appropriately selected according to the substance constituting the dripping 30. For example, in the case where the substance composing the dripping 30 is silicon dioxide, hydrating hydroxide, tetramethylammonium hydroxide, hydrofluoric acid, fluoride and the like are used. When the material composing the sag 30 is tungsten, iron nitrate, potassium iodate and the like are used. When the material composing the dripping 30 is copper, glycine, quinaldic acid, hydrogen peroxide, benzotriazole and the like are used.

As the polishing tape 31, a known tape in which an abrasive grain fixed layer is formed on the surface of a base tape can be used. As the base tape, a tape made of synthetic resin such as polyester, woven fabric, non-woven fabric or foam, or a flocking tape is used. Fixed abrasive layer is made of polyurethane, polyester, A coating material in which abrasive grains such as alumina, silica, and ceria are dispersed in a resin solution such as rill is applied to the surface of the base tape, and dried to form on the surface of the base tape.

<Polishing Method> Using the polishing apparatus 10 shown in FIGS. 1A and 1B, the sag 30 formed on the edge of the semiconductor wafer 28 is removed as shown in FIG. 2A. .

First, the semiconductor wafer 28 is placed on the holding table 25 at the upper end of the wafer holding section 24, and an external vacuum pump (not shown) is driven to attract the semiconductor wafer 28 to the holding table 25. Hold in the holding section 24. An external motor (not shown) connected to the wafer holder 24 is driven to rotate the rotating shaft 26 and rotate the semiconductor wafer 28 held by the wafer holder 24. The rotating shaft 26 is rotated continuously or intermittently as appropriate by adjusting the driving of the motor.

Next, the mouth of the polishing tape 31 is attached to an external tape sending section (not shown). Then, the polishing tape 31 is pulled out from this roll, passed through the first and second rollers 17 and 18 and the surface of the pad 12, and furthermore, the third and fourth rollers 19 and 20 are moved. Then, the polishing tape 31 is wound around a winding port (not shown) of the tape winding section. The motor connected to the take-up roller is driven, and the polishing tape 31 is padded from the tape sending section in the direction of arrow t via the first and second rollers 17 and 18. 12 on the surface of the pad 12, and the polishing tape 31 sent on the surface of the pad 12 in the direction of the arrow t through the third and fourth rollers 19, 20. Take up at the take part. The polishing tape 31 is appropriately or continuously fed onto the surface of the pad 12 continuously or intermittently.

Next, the polishing liquid is supplied to almost the center of the surface of the polishing tape 31 passing through the second roller 18 through the nozzle 23, and the polishing liquid is supplied together with the polishing tape 31 in the direction of the arrow t. To send out.

Next, the piston cylinder 23 is driven to advance the shaft 24 in the direction of the arrow, and the surface of the polishing tape 31 is pressed against the edge of the semiconductor wafer 28 via the pad 12. The pressing pressure of the polishing tape 31 against the page of the semiconductor wafer 28 is performed by adjusting the amount of the advance / retreat movement.

In one embodiment of the present invention, the motor 22 is driven while pressing the surface of the polishing tape 31 against the edge of the semiconductor wafer 28 via the pad 12. Then, head 1 1 is turned about axis 21 in the direction of arrow R 2. Here, while the head 11 is turning in the direction of the arrow R2, the shaft 14 on the back side of the pad 12 is advanced in the direction of the arrow T, and the surface of the polishing tape 31 is It is pressed against the edge of the semiconductor wafer 28 via the pad 12 (see FIGS. 2 (b) and 2 (c)). In another embodiment of the present invention for polishing the edge of the semiconductor wafer 28, the motor 22 is driven to move the head 11 along the edge of the semiconductor wafer 28 with respect to the axis 21. Swivel in the direction of R2, tilt the head 11 and then drive the piston cylinder 13 on the back side of the pad 12 to advance the shaft 14 in the direction of arrow T and remove the pad 12 Then, the surface of the polishing tape 31 is pressed against the edge of the semiconductor wafer 28, and a desired portion of the edge of the semiconductor wafer 28 is selectively polished.

Further, in another embodiment of the polishing of the edge of the semiconductor wafer 28 according to the present invention, air is passed through the nozzles 27 arranged above the center of rotation of the semiconductor wafer 28 held on the wafer holder 24. Polishing is performed while blowing air onto the rotation center of the semiconductor wafer 28 and blowing air from the center side of the semiconductor wafer 28 toward the edge. As a result, air pressure is applied to the polishing liquid supplied to the semiconductor wafer 28 by the polishing tape 31 sent onto the surface of the pad 12, and a region other than the edge of the semiconductor wafer 28 (reference numeral in FIG. 2) 29 Prevents the polishing liquid from entering the film surface (shown in 9).

The page of the semiconductor wafer 28 is polished as described above, and the droop 30 is removed from the page of the semiconductor wafer 28 as shown in FIG.

In the polishing of the edge of the semiconductor wafer 28 according to the present invention, the polishing first The first polishing may be performed using a cooling liquid as a liquid, and then the second polishing may be performed using a reaction liquid as a polishing liquid. The first polishing may be performed by using the polishing liquid, and then the second polishing may be performed by using the cooling liquid.

Claims

The scope of the claims

1. An apparatus for polishing an edge of a semiconductor wafer using a polishing tape having an abrasive fixed layer formed on a surface thereof in order to remove sagging formed on an edge of the semiconductor wafer,

(1) a wafer holding unit that holds a semiconductor wafer and rotates the semiconductor wafer;

(2) a head having a pad for pressing the surface of the polishing tape against the edge of the semiconductor wafer held by the wafer holding unit;

(3) tape supply means for sending the polishing tape over the surface of the pad, and winding up the polishing tape sent over the surface of the pad;

(4) a polishing liquid supply means for supplying a polishing liquid to the surface of the polishing tape sent on the surface of the pad; and

(5) The head is rotated so that the surface of the pad moves along the edge of the semiconductor wafer so as to draw a circle from the back side of the semiconductor wafer to the front side or from the front side to the back side. Head swiveling means to

Device consisting of

2. Air supply means for blowing air onto the surface on the center side of the semiconductor wafer held by the wafer holding portion to flow the air from the center side of the semiconductor wafer toward the edge. Claim 1 apparatus.

3. The apparatus according to claim 1, wherein a cooling liquid is used as the polishing liquid. 4. The apparatus according to claim 1, wherein a reaction liquid containing a chemical solution for dissolving the dripping is used as the polishing liquid.

5. A method of polishing the edge of the semiconductor wafer using the apparatus according to claim 1, wherein

(1) a step of holding a semiconductor wafer on the wafer holding unit and rotating the semiconductor wafer;

(2) sending the polishing tape onto the surface of the pad, and winding up the polishing tape sent to the surface of the pad;

(3) supplying the polishing liquid to the surface of the polishing tape sent on the surface of the pad; and

(4) pressing the surface of the polishing tape against the edge of the semiconductor wafer 8 via the pad;

Consisting of:

6. While pressing the surface of the polishing tape against the edge of the semiconductor wafer 8 via the pad, the surface of the pad is moved along the edge of the semiconductor wafer from the back side of the semiconductor wafer to the front side or 6. The method according to claim 5, further comprising: rotating the head so as to move in a circle from the front side to the back side.

7. The surface of the pad is along the edge of the semiconductor wafer, Turning the head and inclining the head so as to move in a circle in a direction from the back side to the front side or from the front side to the back side of the semiconductor wafer. 6. The method according to claim 5, wherein after tilting the pad, the surface of the polishing tape is pressed against the edge of the semiconductor wafer via the pad.

8. The method of claim 5, further comprising: blowing air onto a central surface of the semiconductor wafer to flow the air from a central side of the semiconductor wafer toward an edge.