WO2001031702A1 - Procede de protection de puces de circuit integre par depot d'une couche electriquement isolante par aspirante sous vide - Google Patents
Procede de protection de puces de circuit integre par depot d'une couche electriquement isolante par aspirante sous vide Download PDFInfo
- Publication number
- WO2001031702A1 WO2001031702A1 PCT/FR2000/002793 FR0002793W WO0131702A1 WO 2001031702 A1 WO2001031702 A1 WO 2001031702A1 FR 0002793 W FR0002793 W FR 0002793W WO 0131702 A1 WO0131702 A1 WO 0131702A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- integrated circuit
- electrically insulating
- insulating material
- chip
- chips
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000012777 electrically insulating material Substances 0.000 claims abstract description 24
- 238000005520 cutting process Methods 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000002966 varnish Substances 0.000 claims abstract description 5
- 239000000853 adhesive Substances 0.000 claims description 20
- 230000001070 adhesive effect Effects 0.000 claims description 20
- 235000012431 wafers Nutrition 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000002985 plastic film Substances 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 238000006731 degradation reaction Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 239000004840 adhesive resin Substances 0.000 abstract 1
- 229920006223 adhesive resin Polymers 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- 229920001940 conductive polymer Polymers 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Definitions
- the present invention relates to the field of integrated circuit chips.
- the present invention relates more particularly to a method for protecting integrated circuit chips making it possible to isolate its flanks.
- connection of integrated circuit chips with a connection terminal block of a card for example, can be carried out by traditional wired wiring or by other techniques using conductive polymer compounds in contact with the output pads of the chip.
- FIG. 1 A first method using a conductive polymer compound to connect the chip to the binding tracks is illustrated in FIG. 1.
- the connection tracks 12 are brought close to the location provided for the chip 100.
- the latter is bonded by the rear face 104 to the connection tracks 12 of the connection terminal block using an electrically insulating adhesive 50
- This adhesive may for example be a crosslinking adhesive under the effect of exposure to ultraviolet radiation.
- the electrical connections between the output pads 120 of the chip 100 and the connection tracks 12 are then made by depositing an electrically conductive resin 40 which covers the output pads 120 of the chip 100 and the connection tracks 12 of the menu.
- This conductive resin 40 can for example be a polymerizable adhesive loaded with conductive particles such as silver particles.
- FIG. 2 A second method using a conductive polymer compound to connect the chip to the bonding tracks is illustrated in FIG. 2. This method consists in transferring the chip according to a well-known "flip chip" arrangement.
- the chip 100 is turned upside down with the output pads 120 downwards.
- the chip 100 is then connected by placing the output pads previously provided with bosses 120 on the connecting tracks 12 printed at the location provided for the chip.
- the chip 100 is connected to the connecting tracks 12 by means of an adhesive 35 with electrical conduction.
- These chip connection techniques using conductive polymers are very effective and efficient. They have many advantages over the traditional technique of wired cabling and tend to become widespread among integrated circuit assemblers. In fact, these techniques using a conductive polymer make it possible to reduce the number of manufacturing operations and to significantly reduce the cost of manufacturing materials for integrated circuits.
- the conductivity of silicon is directly linked to the process for manufacturing the wafers on which the integrated circuit chips are arranged and differs according to the manufacturers and the production lines.
- a user wishing to specify a particular conductivity of the substrate will then be linked to a given supplier and even to a given product range, which automatically results in additional costs and a limitation of the products that can be used.
- the object of the present invention is to solve the problems set out above.
- the object of the present invention is to eliminate the drawbacks linked to the connection of integrated circuit chips by technologies using conductive polymers.
- the present invention provides a method of protecting the sides of circuit chips integrates in order to isolate them from the conductive polymer components used for the connection of the chip output pads with the connection tracks of the connection terminal blocks.
- the present invention provides a method of protecting integrated circuit chips arranged on a silicon wafer, characterized in that the method comprises the steps consisting in: cutting out cutting paths in the silicon wafer so as to separate the integrated circuit chips and reveal their sides; placing the integrated circuit chips between two support sheets; - Penetrating an electrically insulating material between the two support sheets so as to cover the sides of each integrated circuit chip.
- the electrically insulating material penetrates between the two support sheets by vacuum suction.
- At least one of the two support sheets is an adhesive plastic sheet.
- the adhesive of the support sheets is degradable by exposure to ultraviolet light.
- the upper support sheet is removed by peeling after exposure to ultraviolet light.
- the integrated circuit chips are ejected from the lower support sheet after degradation of the adhesion strength of said sheet by exposure to ultraviolet light.
- the electrically insulating material has a viscosity of between 20 CPS and 20,000 CPS.
- the electrically insulating material has adhesion properties on silicon.
- the electrically insulating material fills the entire height of the cutting paths between the sides of the circuit chips integrates and retracts as it dries.
- the electrically insulating material is a resin.
- the electrically insulating material is a varnish.
- the present invention also relates to an integrated circuit chip comprising an active face, a rear face and wafers, characterized in that said wafers are covered with an electrically insulating layer which extends from the edge of the active face to the 'stops from the rear side.
- the invention also applies to an electronic device with integrated circuit chip comprising the chip according to the invention.
- the chip is connected to connection points or communication interface by electrically conductive adhesive material conforming to the surface of the chip.
- the method according to the invention has the advantage of allowing the systematic use of techniques of direct connection between the output pads of a chip and the connection tracks of a terminal block with a conductive adhesive whatever the chip used.
- the method according to the present invention can advantageously be used with any type of chip whatever the substrate used, whatever the size and shape of the chip.
- the method according to the present invention is easy to implement. Although it requires an additional step preceding the connection of the chips, the protection method according to the invention does not entail any significant additional cost or lengthy manufacturing time.
- the protective layer is deposited only on the sides of the integrated circuit chips, without being applied to the rear face of the latter, unlike conventional methods such as spraying, screen printing or the like.
- Figure 1 is a sectional diagram of the connection of a chip with dispensing of conductive resin.
- FIG. 2 dice to described, is a sectional diagram of the connection of a chip according to a technique of "flip chip” with conductive adhesive.
- Figure 3 is a schematic perspective view of the first step of the method according to the invention.
- FIG. 4 illustrates a second step of the method according to the present invention.
- FIG. 5 illustrates the step of protecting the flanks of the chips according to the method of the present invention.
- the method according to the present invention comprises several steps.
- a first step consists in cutting the silicon wafer 10 on which the integrated circuit chips 100 are arranged in order to separate them.
- the wafer 10 is placed on a support sheet 110.
- This support sheet 110 can for example consist of an adhesive plastic sheet whose adhesion is degradable by exposure to ultraviolet for example.
- the silicon wafer 10 is then cut according to known conventional methods and the dissociated chips 100 are held together by the adhesive of the support sheet 110.
- This support essentially has the function of keeping the circuit chips 100 in cohesion and of enabling them handling for the following protection step.
- a support 110 is thus obtained on which the integrated circuit chips 100 are arranged separated by cutting paths 115 so as to clearly show their sides 106.
- a second step, illustrated in FIG. 4, consists in placing a second support sheet 120 on the integrated circuit chips 100 placed on the first support sheet 110.
- the second support sheet 120 can for example be laminated.
- This step thus makes it possible to place the chips 100 in sandwich between two support sheets 110 and 120.
- the front and rear faces of the chips 100 are therefore protected.
- the second support sheet 120 also consists of an adhesive plastic sheet and the adhesion of which is degradable by exposure to ultraviolet light.
- the third step of the method according to the invention consists in introducing an electrically insulating material 150 between the two support sheets 110 and 120 in order to deposit a protection 150 on the sides 106 of the chips 100 placed between said sheets 110 and 120.
- the protective material 150 of the flanks of the chips 100 penetrates between the two support sheets 110 and 120 by vacuum suction.
- a pumping device is provided in order to create a primary vacuum between said sheets 110, 120.
- the protective material 150 is inserted between the support sheets 110, 120.
- the vacuum thus created between the support sheets 110, 120 allows the propagation of the insulating material 150 by suction between the cutting paths 115.
- the pumping device can be located, for example, on one of the sides of the support sheets 110, 120 and the inlet of the protective material 150 can be located on the side opposite to the pumping device. It can also be envisaged, for example, to have a matrix of micro suction nozzles under the first support sheet 110, said nozzles being located on the cutting paths 115, and to insert the protective material 150 all around the sheets support 110, 120.
- the protective material 150 used in the method according to the invention can be a resin or a varnish.
- the viscosity of said material 150 is preferably between 20 and 20,000 CPS, that is to say relatively liquid in order to be well propagate in the cutting paths 115 between the chips 100 during the aspiration.
- the protective material 150 retracts as it dries.
- it fills the entire height of the cutting paths 115, then retracts by drying to properly press along the sides 106 of the chips 100 while leaving only a thin film in the cutting paths 115 which will facilitate the chip ejection step.
- the protective layer 150 on the sides 106 of the chips 100 After depositing the protective layer 150 on the sides 106 of the chips 100, the latter are detached from their supports 110 and 120 so as to be connected in their place and place.
- the second support sheet 120 can be removed for example by peeling after having been exposed to ultraviolet in order to reduce its adhesion strength.
- the ICJ chips must then be ejected from the first support sheet 110.
- This ejection of the chips 100 can be carried out by cutting the support 110 between the chips 100, or by mechanical ejection by lifting the chips 100 and breaking the protective layer 150 deposited on the cutting cnemms 115 between the chips 100, or by reducing the adhesion strength of the support sheet 110 by exposure to ultraviolet light, or by any other suitable means.
- the characteristics chosen for the insulating material are such that the break or cut between the chips will be clear and will leave the sides 106 of the chips 100 covered by the protective layer 150.
- the integrated circuit chips 100 are therefore detached from the support 110 and can be connected according to any type of assembly using conductive polymers since the sides 106 of the chips 100 are protected by the insulating material 150.
- the circuit chips thus integrates Protected devices can be used in electronic devices in which they are connected to connection points or to a communication interface by electrically conductive adhesive material conforming to the shape of the chip.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU77961/00A AU7796100A (en) | 1999-10-26 | 2000-10-09 | Method for protecting integrated card chips by deposit of an electrically insulating layer by vacuum suction |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR99/13371 | 1999-10-26 | ||
FR9913371A FR2800198B1 (fr) | 1999-10-26 | 1999-10-26 | Procede de protection de puces de circuit integre par aspiration sous vide |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001031702A1 true WO2001031702A1 (fr) | 2001-05-03 |
Family
ID=9551370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2000/002793 WO2001031702A1 (fr) | 1999-10-26 | 2000-10-09 | Procede de protection de puces de circuit integre par depot d'une couche electriquement isolante par aspirante sous vide |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU7796100A (fr) |
FR (1) | FR2800198B1 (fr) |
WO (1) | WO2001031702A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10706344B1 (en) * | 2017-05-23 | 2020-07-07 | Fiteq, Inc. | Process for maintaining registration of an array through use of a carrier in process flow |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2348323A1 (de) * | 1973-09-26 | 1975-04-03 | Licentia Gmbh | Integrierte festkoerperschaltung mit einer vielzahl von bauelementen in einem gemeinsamen halbleiterkoerper |
GB2120861A (en) * | 1982-05-27 | 1983-12-07 | Vladimir Iosifovich Livshits | Process for manufacturing panels to be used in microelectric systems |
US5270260A (en) * | 1990-08-23 | 1993-12-14 | Siemens Aktiengesellschaft | Method and apparatus for connecting a semiconductor chip to a carrier system |
EP0704899A2 (fr) * | 1994-09-30 | 1996-04-03 | Nec Corporation | Procédé de fabrication d'un boîtier pour dispositif semi-conducteur de la taille d'une puce |
US5533664A (en) * | 1993-09-07 | 1996-07-09 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
FR2761497A1 (fr) * | 1997-03-27 | 1998-10-02 | Gemplus Card Int | Procede de fabrication d'une carte a puce ou analogue |
FR2761498A1 (fr) * | 1997-03-27 | 1998-10-02 | Gemplus Card Int | Module electronique et son procede de fabrication et carte a puce comportant un tel module |
DE19845296A1 (de) * | 1998-09-03 | 2000-03-16 | Fraunhofer Ges Forschung | Verfahren zur Kontaktierung eines Schaltungschips |
-
1999
- 1999-10-26 FR FR9913371A patent/FR2800198B1/fr not_active Expired - Fee Related
-
2000
- 2000-10-09 AU AU77961/00A patent/AU7796100A/en not_active Abandoned
- 2000-10-09 WO PCT/FR2000/002793 patent/WO2001031702A1/fr active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2348323A1 (de) * | 1973-09-26 | 1975-04-03 | Licentia Gmbh | Integrierte festkoerperschaltung mit einer vielzahl von bauelementen in einem gemeinsamen halbleiterkoerper |
GB2120861A (en) * | 1982-05-27 | 1983-12-07 | Vladimir Iosifovich Livshits | Process for manufacturing panels to be used in microelectric systems |
US5270260A (en) * | 1990-08-23 | 1993-12-14 | Siemens Aktiengesellschaft | Method and apparatus for connecting a semiconductor chip to a carrier system |
US5533664A (en) * | 1993-09-07 | 1996-07-09 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
EP0704899A2 (fr) * | 1994-09-30 | 1996-04-03 | Nec Corporation | Procédé de fabrication d'un boîtier pour dispositif semi-conducteur de la taille d'une puce |
FR2761497A1 (fr) * | 1997-03-27 | 1998-10-02 | Gemplus Card Int | Procede de fabrication d'une carte a puce ou analogue |
FR2761498A1 (fr) * | 1997-03-27 | 1998-10-02 | Gemplus Card Int | Module electronique et son procede de fabrication et carte a puce comportant un tel module |
DE19845296A1 (de) * | 1998-09-03 | 2000-03-16 | Fraunhofer Ges Forschung | Verfahren zur Kontaktierung eines Schaltungschips |
Also Published As
Publication number | Publication date |
---|---|
FR2800198B1 (fr) | 2002-03-29 |
AU7796100A (en) | 2001-05-08 |
FR2800198A1 (fr) | 2001-04-27 |
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