WO1999054786A1 - Elastomeric mask and use in fabrication of devices, inlcuding pixelated electroluminescent displays - Google Patents
Elastomeric mask and use in fabrication of devices, inlcuding pixelated electroluminescent displays Download PDFInfo
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- WO1999054786A1 WO1999054786A1 PCT/US1999/008623 US9908623W WO9954786A1 WO 1999054786 A1 WO1999054786 A1 WO 1999054786A1 US 9908623 W US9908623 W US 9908623W WO 9954786 A1 WO9954786 A1 WO 9954786A1
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- 238000004519 manufacturing process Methods 0.000 title description 13
- 238000000034 method Methods 0.000 claims abstract description 185
- 239000000758 substrate Substances 0.000 claims abstract description 111
- 239000012530 fluid Substances 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 claims abstract description 75
- 230000008021 deposition Effects 0.000 claims abstract description 41
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 144
- 230000000873 masking effect Effects 0.000 claims description 54
- 238000000151 deposition Methods 0.000 claims description 39
- 239000002243 precursor Substances 0.000 claims description 39
- 238000007789 sealing Methods 0.000 claims description 16
- 238000001704 evaporation Methods 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 13
- 239000013543 active substance Substances 0.000 claims description 11
- 239000000725 suspension Substances 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000006731 degradation reaction Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 230000000593 degrading effect Effects 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 230000003100 immobilizing effect Effects 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 150000002484 inorganic compounds Chemical class 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 230000001737 promoting effect Effects 0.000 claims 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 36
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 36
- 229920000642 polymer Polymers 0.000 description 23
- 239000010410 layer Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052737 gold Inorganic materials 0.000 description 20
- 239000010931 gold Substances 0.000 description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 230000003213 activating effect Effects 0.000 description 17
- 238000000206 photolithography Methods 0.000 description 17
- 241000894007 species Species 0.000 description 17
- 239000000243 solution Substances 0.000 description 16
- 238000000059 patterning Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- -1 poly(p-phenylenevinylene) Polymers 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 11
- 229920001971 elastomer Polymers 0.000 description 11
- 239000011521 glass Substances 0.000 description 11
- 238000003491 array Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000000806 elastomer Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 9
- 108090000623 proteins and genes Proteins 0.000 description 9
- 102000004169 proteins and genes Human genes 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 9
- 239000003124 biologic agent Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 8
- 238000005401 electroluminescence Methods 0.000 description 8
- 239000000499 gel Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 239000004593 Epoxy Substances 0.000 description 7
- 239000004005 microsphere Substances 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000002209 hydrophobic effect Effects 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000012703 sol-gel precursor Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000007373 indentation Methods 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910001868 water Inorganic materials 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 102000004190 Enzymes Human genes 0.000 description 3
- 108090000790 Enzymes Proteins 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- YBJHBAHKTGYVGT-ZKWXMUAHSA-N biotin Natural products N1C(=O)N[C@@H]2[C@H](CCCCC(=O)O)SC[C@@H]21 YBJHBAHKTGYVGT-ZKWXMUAHSA-N 0.000 description 3
- 239000013626 chemical specie Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000002638 heterogeneous catalyst Substances 0.000 description 3
- 239000002815 homogeneous catalyst Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- 108090001008 Avidin Proteins 0.000 description 2
- 102000014914 Carrier Proteins Human genes 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 229910010252 TiO3 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229960002685 biotin Drugs 0.000 description 2
- 235000020958 biotin Nutrition 0.000 description 2
- 239000011616 biotin Substances 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000002322 conducting polymer Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000013536 elastomeric material Substances 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000002073 fluorescence micrograph Methods 0.000 description 2
- 239000008273 gelatin Substances 0.000 description 2
- 229920000159 gelatin Polymers 0.000 description 2
- 235000019322 gelatine Nutrition 0.000 description 2
- 235000011852 gelatine desserts Nutrition 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000017 hydrogel Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229960004592 isopropanol Drugs 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 2
- 238000001471 micro-filtration Methods 0.000 description 2
- 238000000813 microcontact printing Methods 0.000 description 2
- 238000001053 micromoulding Methods 0.000 description 2
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 230000015843 photosynthesis, light reaction Effects 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 238000006068 polycondensation reaction Methods 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 239000001044 red dye Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- OEZWIIUNRMEKGW-UHFFFAOYSA-N (2-bromophenyl) 2-methylprop-2-enoate Chemical class CC(=C)C(=O)OC1=CC=CC=C1Br OEZWIIUNRMEKGW-UHFFFAOYSA-N 0.000 description 1
- VNYTWDAWZSFABS-UHFFFAOYSA-N (2-bromophenyl) prop-2-enoate Chemical class BrC1=CC=CC=C1OC(=O)C=C VNYTWDAWZSFABS-UHFFFAOYSA-N 0.000 description 1
- FMQPBWHSNCRVQJ-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-yl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C(F)(F)F)C(F)(F)F FMQPBWHSNCRVQJ-UHFFFAOYSA-N 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- UGHIQYNKFXEQPU-UHFFFAOYSA-N 2,3-dichloro-1,4-dimethylbenzene Chemical group CC1=CC=C(C)C(Cl)=C1Cl UGHIQYNKFXEQPU-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 102000003846 Carbonic anhydrases Human genes 0.000 description 1
- 108090000209 Carbonic anhydrases Proteins 0.000 description 1
- 108010078791 Carrier Proteins Proteins 0.000 description 1
- 238000002965 ELISA Methods 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 238000007341 Heck reaction Methods 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 102000004856 Lectins Human genes 0.000 description 1
- 108090001090 Lectins Proteins 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229920001730 Moisture cure polyurethane Polymers 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910020279 Pb(Zr, Ti)O3 Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000000427 antigen Substances 0.000 description 1
- 102000036639 antigens Human genes 0.000 description 1
- 108091007433 antigens Proteins 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 108091008324 binding proteins Proteins 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000008364 bulk solution Substances 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010411 electrocatalyst Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- MHMNJMPURVTYEJ-UHFFFAOYSA-N fluorescein-5-isothiocyanate Chemical compound O1C(=O)C2=CC(N=C=S)=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 MHMNJMPURVTYEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 description 1
- 238000012615 high-resolution technique Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 239000005556 hormone Substances 0.000 description 1
- 229940088597 hormone Drugs 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000002523 lectin Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000001682 microtransfer moulding Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000007523 nucleic acids Chemical class 0.000 description 1
- 102000039446 nucleic acids Human genes 0.000 description 1
- 108020004707 nucleic acids Proteins 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- ATGAWOHQWWULNK-UHFFFAOYSA-I pentapotassium;[oxido(phosphonatooxy)phosphoryl] phosphate Chemical compound [K+].[K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O ATGAWOHQWWULNK-UHFFFAOYSA-I 0.000 description 1
- 229950011087 perflunafene Drugs 0.000 description 1
- UWEYRJFJVCLAGH-IJWZVTFUSA-N perfluorodecalin Chemical compound FC1(F)C(F)(F)C(F)(F)C(F)(F)[C@@]2(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)[C@@]21F UWEYRJFJVCLAGH-IJWZVTFUSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920002627 poly(phosphazenes) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012460 protein solution Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000033458 reproduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000007039 two-step reaction Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
Definitions
- the present invention relates generally to surface modification, and more particularly to the deposition of material onto a surface through openings in an elastomeric mask.
- Electroluminescence including in some cases organic electroluminescent materials, is described by Yam, "Plastics Get Wired", Scientific American, July, 1995, 83-87; Kijima, et al, "RGB Luminescence from Passive-Matrix Organic LED's", IEEE Transactions on Electron Devices, 44, 8, August, 1997; Shen, et al., “Three-Color, Tunable Organic Light- Emitting Devices", Science, 276, June 27, 1997; and Burrows, et al., “Achieving Full-Color Organic Light-Emitting Devices for Lightweight, Flat-Panel Displays", IEEE Transactions on Electron Devices, 44, 8, August, 1997.
- a variety of materials including electroluminescent materials, have been deposited on surfaces at small feature size using a variety of techniques including laser ablation, photolithography, the use of shadow masks, and other techniques.
- Burger, et al. in "High-Resolution Shadow Mask Patterning in Deep Holes and its Application to an Electrical Wafer Feed-Through", Sensors and Actuators, A 54 (1996) 669- 673, describe electron-beam evaporation of metals through a shadow mask.
- pixels are defined by patterning cathode material rather than the electroluminescent material itself, and therefore the technique is not well-suited to creation of a multi-colored display.
- Photolithography is generally faster than laser ablation and therefore has greater potential for high- volume production of useful devices.
- wet chemical etching generally is required to define pixels using photolithography, which has a deleterious effect on electroluminescent efficiency.
- Lidzey, et al. (Synth. Meth., 1996, 82, 141) report that the efficiency of an electroluminescent device was decreased by 60 percent upon one photolithographic step involving a wet chemical etch. Devices also can be degraded by exposure to atmospheric water and oxygen, inevitable during photolithography.
- Encapsulation has been used as a technique to avoid degradation during photolithography. (Tian, et al., Appl. Phys. Lett., 1997, 71, 3197). Encapsulation, however, is problematic, according to Tian, et al., who report that it can lead to shorting of devices. Encapsulation also adds an extra step to the fabrication process. Shadow masking techniques that are known typically involve the use of machined-metal masks, in which the size of pixels are generally considered too large for high-resolution displays. In many of the above techniques, it is not possible to fabricate displays on non-planar surfaces.
- a fluid carrier or precursor is introduced into the channels, an agent is deposited at regions of the substrate surface corresponding to the channels, and the article is removed from the surface. Patterned chemical reactions, precipitation, polymerization, and the like can take place at the substrate surface in this manner. Alternatively, an agent can be positioned in the indentations and the contoured surface brought into contact with a surface to be modified. Also described in Kim, et. al, is a flexible polymeric mask used to pattern deposition of material on a surface.
- Rogers, et al. (Appl. Phys. Lett. 1, 70, 1997) describe a technique for forming a photomask on the exterior surface of an optical fiber.
- An elastomeric article having a contoured surface including protrusions and intervening indentations, is used to apply a chemical species to the exterior surface of an optical fiber according to the pattern of the protrusions. Specifically, the axis of the optical fiber is positioned perpendicularly to the protrusions and is rolled across the protrusions, and rings of the chemical species are transferred from the protrusions to the outer surface of the fiber in this way.
- the chemical species can facilitate creation of a photomask by serving as a metal deposition catalyst.
- U.S. Patent No. 4,735,890 (Nakane) describes a photomask for photolithographic fine patterning of a photoresist film. A thin film of a polymeric material having elasticity is brought into intimate contact with a photoresist film. Selective exposure of the photoresist through the photomask allows desired patterning of photoresist.
- Other "contact photolithography” techniques involving contact between a mask and a photoresist coated substrate, are described in U.S. Patent Nos. 5,147,763 (Kamitakahara) and 5,160,959 (Everett) and 4,810,621 (Akkapeddi).
- U.S. Patent No. 5,259,926 (Kuwabara) describes a technique for thin-film patterning.
- a thin film is provided on a substrate and a mask, having a desired pattern, is formed on the thin film by forming a layer of an organic resin on the thin film and forming the organic resin layer in a desired pattern by a mechanical forming member.
- An exposed portion of the thin film then is removed by etching.
- U.S. Patent No. 4,518,636 (Richards) describes a technique for selective metal plating of a component. Upper and lower faces of the component are contacted with upper and lower masks, respectively, so that the lower mask exposes a part of the component to be plated. The part is positioned over a plating tank and selective plating takes place.
- the upper mask can be a deformable elastic polymeric material, and the lower mask is a more rigid rubber or plastic material.
- U.S. Patent No. 5,480,530 (Zejda) describes an elastomeric mask for covering the outer marginal area of a disk-shaped substrate surface during a coating process.
- the substrate can be a compact disk, and the mask is of an annular shape with a circular opening into which the disk is placed.
- U.S. Patent No. 5,691,018 (Kelly) describes a flexible elastomeric mask for protecting apparatus used to mount a work piece to be subjected to thermal spray coating.
- U.S. Patent No. 5,705,043 (Zwerner) describes apparatus for selectively electrolytically plating defined regions of a continuously moving conductive work piece. Elastomeric sealing plates are provided including openings that define areas of work pieces to be plated.
- one object of the present invention is to provide high-resolution optical devices that can be multi-color and can display electroluminescence.
- Another object of the invention is to provide apparatus and techniques for forming such displays. It is another object of the invention to provide improved apparatus and techniques for forming a variety of patterns of a variety of materials on a variety of surfaces at high resolution.
- the present invention provides a series of methods for patterning a surface, and articles including patterns at surfaces.
- the invention provides a series of methods.
- One method involves shielding a first portion of a surface of an article with a masking systems including a cohesive mask in conformal contact with a surface of the article.
- An agent then is allowed to be applied through a channel in the masking system to a second portion of the surface of the article while the agent is prevented from being applied to the first portion.
- the channel has a dimension of less than one millimeter.
- a method in another embodiment involves shielding a first portion of a surface of an article with a mask while leaving a second portion of the surface of the article remaining unshielded by the mask.
- the first portion has a dimension of less than one millimeter, and is shielded by positioning the mask in conformal contact with the surface without degrading a portion of the mask proximate the second portion of the surface.
- An agent then is applied to the second portion of the surface of the article.
- a first portion of a non-planar surface of the article is shielded with a mask by bringing a surface of the mask into conformal contact with the non-planar surface of the article an agent then is allowed to pass through a channel within the mask and to be applied to a second portion of the surface of the article while the agent is prevented from being applied to the first portion with the mask.
- the channel has a dimension of less than one millimeter.
- An agent is allowed to be applied to a second, unshielded portion of the surface of the article while the agent is prevented from application from the first portion of the surface of the article with the masking system.
- the masking system then is re-placed, and an agent is applied to at least a portion of the first portion of the surface of the article.
- a first portion of a surface of an article is shielded with a mask.
- a fluid is allowed to be applied to a second portion of the surface while the fluid is prevented from being applied to the first portion with the mask.
- the second portion of the surface has a dimension of less than one millimeter.
- a material is allowed to harden from the fluid, and the mask is removed from the surface while leaving the article adhere to the second portion of the surface.
- Another method involves shielding a first portion of a surface of a article with a mask by bringing a surface of the mask into conformal contact with the surface of the article while leaving a second portion of the surface of the article unshielded by the mask.
- the first portion that is shielded has a dimension of less than one millimeter.
- An agent then is applied to the second portion of the surface and, without exposure of the mask to conditions of degradation, the mask is removed from the surface thereby leaving the agent at the second portion of the surface and the first portion free of the agent.
- the invention also provides a method according to any of those described above involving application of an agent to a specific portion of a surface of an article using a mask, followed by application of the same or another agent, via a second masking step involving the same or a different mask, to a portion of the surface such that the agent applied via the second step contacts at least a portion of the agent applied via the first masking step.
- the method can result in an interconnected pattern of agent on a surface, where the surface also includes regions free of the agent, which can define electrical circuitry or the like.
- This technique can be used with multiple re-placement steps to produce not only contacting, but intersecting agent deposition portions. For example, a pattern can be used to conduct multiple depositions, or applications, resulting in intersecting wires, or the like.
- Another method of the invention involves immobilizing on average less than about 1 x 10 5 at each of a plurality of separate, isolated regions of a surface of an article while leaving regions of the surface of the article intervening the separate isolated regions essentially free of the molecules.
- the invention provides an article that can be used for methods described herein or for other purposes.
- the article is an elastomeric article including a first surface and an opposing second surface, and plurality of channels passing through the article and connecting the first surface with the second surface. At least one of the plurality of channels has a cross-sectional dimension of less than one millimeter.
- Another aspect of the invention involves making a mask.
- the method involves providing a master and forming the mask on a surface of the master, preferably by allowing a fluid precursor of the mask to at least partially solidify against the master.
- the fluid precursor can be a fluild polymer or prepolymer, which can be allowed to polymerize, crosslink, or solidify against the master surface.
- the master can be fabricated by micromchining or lithographic techniques, and the fluid precursor of the mask can be applied to the master surface by any technique such as pouring, spreading, spin-coating, and the like.
- the master is fabricated by photolithography, and a precursor of an elastomeric material is spin-coated on a surface of the master and allowed to harden, and is removed to define an elastomeric mask.
- the fabrication technique can involve applying different layers of fluid precursor to form a mask inlcuding sevaral layers.
- Fig. 1 schematically illustrates a photolithographically-prepared template for creation of an elastomeric masking system of the invention
- Fig. 2 schematically illustrates a polymeric elastomeric masking system formed on the template of Fig. 1;
- FIG. 3 schematically illustrates a masking system formed as shown in Figs. 1 and 2, following removal from the template;
- Fig. 4 schematically illustrates formation of an array of organic electroluminescent pixels on a surface using the masking system of Fig. 3;
- FIG. 5 schematically illustrates formation of a multi-color organic electroluminescent array using a masking system of multiple masks
- FIG. 6 is a top view of the masking system used in the procedure of Fig. 5;
- Fig. 7 schematically illustrates formation of an array of different materials on a surface using multiple masks
- Fig. 8 illustrates schematically a technique for application of a fluid to regions of a substrate surface in register with channels of a masking system as illustrated in Figs. 3-7;
- Fig. 9 is a photocopy of a scanning electron micrograph (SEM) image of gold dots created on a substrate surface using a masking technique of the invention;
- Fig. 10 is a photocopy of a SEM image of wells etched in silicon using a masking system of the invention
- Fig. 11 is a photocopy of an image of electroluminescence from electroluminescent pixels created on a surface using a masking system of the invention
- Fig. 12 is a photocopy of an optical micrograph image of photoluminescent material created on a substrate surface using the masking technique of the invention.
- Fig. 13 is a photocopy of an image showing photo luminescence of photoluminescent pixels created on a substrate surface using the masking technique of the invention
- Fig. 14 is a photocopy of an optical image of silver circles electroplated onto gold using a masking technique of the invention
- Fig. 15 is a photocopy of an optical image of glass circles created on silicon using a masking technique of the invention.
- Fig. 16 is a photocopy of a fluorescence image of fluorescently-labeled protein immobilized at discreet regions of a surface using a masking technique of the invention
- Fig. 17 is a photocopy of an elastomeric mask defining a staggered array of crosses, used in Example 8, below;
- Fig. 18 is a photocopy of an optical micrograph of a gold grid formed using the mask of Fig. 17 in two deposition steps (see Example 8).
- PCT/US96/03073 publication WO 96/29629, June 26, 1996
- International patent application no. PCT/US97/04237 publication WO 97/34025
- International patent application no. PCT/US97/04005 publication WO 97/33737, September 18, 1997.
- the present invention provides a mask, and techniques for use of the mask that involve shielding selected portions of a surface, while leaving other portions unshielded, and allowing an agent to be applied to unshielded portions via deposition, chemical reaction, or the like.
- the mask can shield selected portions of the surface by being brought into contact with those portions and, in preferred embodiments, the mask has a flexible surface that allows the mask to conform to the surface.
- the entire mask can be flexible and therefore can conform to a non-planar surface.
- the mask is a polymeric elastomer that can form a seal against a substrate surface.
- masks of the invention can form a seal against a substrate surface in the absence of any clamping apparatus or other apparatus used to apply a force against the mask in a direction of the substrate surface.
- sealing can occur essentially instantaneously upon contact without application of significant pressure, and sealing can be maintained without maintenance of any pressure.
- This sealing is reversible, that is, the mask can be removed from the substrate surface by being peeled off, and can be reused on the same or a different substrate surface. Reusability of a particular mask increases with the thickness of the mask.
- the mask can be used for a variety of applications, one of which is the fabrication of an array of pixels of an organic electroluminescent material on a substrate. Multi-colored, pixelated arrays can be made using the preferred mask of the invention via a technique that avoids the use of solvents during fabrication, and does not require encapsulation of pixels between formation steps.
- the mask can include a very small-scale pattern, for example an array of holes of less than about 1 millimeter down to less than about 1.5 micron. When the mask conforms to and seals against a substrate, material can be patterned through the holes against the substrate, and the mask removed, leaving an array of pixels, without the requirement of steps and apparatus involved in laser ablation, photolithography, and shadow mask procedures.
- Fig. 1 shows a master 20 for fabricating an elastomeric mask of the invention.
- Master 20 includes a substrate 22, on a top surface 24 of which is created an array of essentially cylindrical posts 26 via, for example, photolithography.
- a prepolymeric material 28 then is spin-cast onto the master 20 (on surface 24 and around posts 26) such that the thickness of prepolymer layer 28 is less than the height of posts 26. Posts 26 thus protrude slightly above the layer of prepolymer material 28.
- Mask 30 includes a plurality of holes, or channels 32 that correspond to posts 26 of master 20.
- the pattern of channels 32 in mask 30 is for illustrative purposes only. Any pattern, for example a pattern defined by a single channel or many channels that can be circular, oval, square, rectangular, and the like, and arranged in a grid-like array (as illustrated) or in a non- array (for example random pattern) can be used.
- the pattern can include alphanumeric characters.
- the mask and channels can be of a variety of dimensions. In preferred embodiment, the mask has a thickness (which defines a channel length) of no more than about 1 millimeter.
- the thickness of the mask is no more than about 500 microns, more preferably no more than about 200 microns, more preferably no more than about 100 microns, more preferably still no more than about 25 microns, and the mask can be no more than about 30 microns thick in some embodiments.
- the channels have a preferred cross-sectional dimension that corresponds to the thickness of the mask to create a length-to-diameter ratio of channels of no more than about 5 to 1.
- the channels have a length-to-diameter ratio of no more than about 2 to 1.
- the mask is particularly suited for creation of high-resolution electroluminescent displays, or other devices requiring high resolution and large numbers of small features, and accordingly in preferred embodiments includes at least about 100 channels 32. At least about 50% of the channels in this embodiment have a cross-sectional dimension of less than about 200 microns.
- the channels can be of a variety of cross-sectional shapes and, as illustrated, are essentially circular in cross-section. Where the channels are non-circular, for example ovoid or elongated rectangular, the "cross-sectional dimension" is meant to define the shortest distance across the cross-section of the channel. "Maximum cross-sectional dimension" in this context means the longest distance across the cross-section of the channels.
- the channels 26 have a cross-sectional dimension of less than about 200 microns, more preferably the mask includes at least about 500 channels each of less than about 200 microns in cross-sectional dimension, and each channel spaced from an adjacent channel by no more than about 400 microns.
- This close spacing is particularly important in creation of microelectronic devices where each component created in register with a channel 32 should not be in electrical communication with an adjacent component.
- the mask of the invention facilitates surprisingly high-resolution deposition that allows creation of components in close proximity to each other but without contact with each other (leakage between the mask and masked surface is avoided).
- the mask can include at least about 1000 channels, 1500 channels, or even 2000 or more channels, with at least about 50% of the channels, more preferably at least about 98% of the channels, or essentially all of the channels having a cross- sectional dimension of less than about 100 microns, with each channel spaced from an adjacent channel by no more than about 200 microns. More preferred channel dimensions are less than about 50 microns, less than about 25 microns, less than about 10 microns, less than about 5 microns, less than about 3 microns, and less than about 1.5 microns, with spacing between channels of no more than about twice the cross-section of each channel.
- the cross-section can be maximum cross-sectional channel dimension.
- FIG. 4 illustrates fabrication of a pixelated electroluminescent device.
- a substrate 34 e.g., glass
- a hole-transporting material e.g., poly(N-vinyl carbazole) (PVK)
- ITO indium tin oxide
- Mask 30 of the invention (shown in cross-section) is brought into conformal contact with top surface 42 of the hole-transporting material 36.
- Mask 30 can conform to surface 42 and form a close and reversible seal therewith.
- the tightly-sealed mask 30 allows selective deposition, through channels 32 thereof, of an emitter 44 (e.g., 8- hydroxyquinoline aluminum) via thermal evaporation to form a plurality of pixels of the emitter 44.
- an emitter 44 e.g. 8- hydroxyquinoline aluminum
- deposition may occur atop exposed surfaces of the masking system as well.
- Mask 30 then is re-placed by being removed from surface 42 of hole-transporting material 36, leaving the pixels 44 of emitter intact and adhered to surface 42.
- "re-place" is meant to define moving the mask in any way between steps in a deposition process.
- Re-place can define removing the mask from the surface completely, or re-orienting the mask at the surface, that is, removing the mask and replacing the mask at the same surface in a different position.
- the mask is cohesive and can be removed from a surface as a single unit and re-used, i.e., the mask facilitates a "dry lift-off procedure.
- the mask is cohesive in that attractive forces within the mask that hold the mask together are stronger than forces typically required to remove the mask from a surface. That is. the mask can be used to seal a surface during a deposition process, then can be removed by lifting a portion of the mask which draws the entire mask away from the surface, and the mask then can be reused.
- a cathode 46 e.g.. aluminum
- a cathode 46 then is evaporated on top of the device so as to cover and surround pixels 44 and coat portions of top surface 42 of hole-transporting material 36 not covered by pixels 44.
- Application of an electrical potential between cathode 46 and anode 38, via an electrical circuit 48 (including a power source 50 in electrical communication with cathode 46 and anode 38) creates electroluminescence 52 emanating from pixels 44.
- FIG. 5 one technique for forming a multi-layer pixelated electroluminescent structure that can be used in accordance with the invention is illustrated schematically.
- the mask used in the technique illustrated represents but one pattern that can be used to pattern a surface. Other patterns, including different sizes, shapes, and spacing of channels can be used.
- the technique takes advantage of a method of the invention involving shielding a portion of a surface with a mask and applying an agent to an unshielded portion, then re-placing the mask and applying an agent to a shielded portion.
- a first mask 30 is brought into conformal contact with top surface 42 of hole-transporting material 36.
- a second mask 300 is placed atop mask 30, the first and second masks defining a masking system.
- Mask 300 includes a plurality of channels 302 that are larger than channels 32 of mask 30.
- Mask 300 is placed atop mask 30 such that several of channels 32 of mask 30 are shielded by mask 300, while others of channels 32 remain unshielded.
- mask.300 includes a series of linear channels 302 (elongates channels that extend into and out of the page) that allow exposure of a linear array of channels 32 of mask 30 to be exposed, while shielding other linear arrays of channels 32.
- mask 300 is aligned with every third line of channel 32 of mask 30. Together, the masking system defined by masks 30 and 300 shields a first portion of surface 42.
- An emitter 44 then is evaporated through channels 32 that remain unshielded to create a linear array of pixels at a second portion of surface 42.
- Mask 30 then is re-placed, i.e., re-oriented in relation to the surface, to shield a different set of channels 32.
- mask 300 is removed, re-aligned, and re-sealed so as to shield channels 32 that it had left unshielded in the step previously described, while shielding an adjacent, linear array of channels 32.
- a second evaporation step of a second emitter 45 creates lines of pixels of a different color emitter on a portion of the first portion (which had been shield originally) of surface 42.
- both masks 300 and 30 are re-placed (removed) leaving a linear array of pixels 44, a linear array of pixels 45 next to the array of pixels 44, and a linear array of pixels 47 in between the linear arrays 44 and 45.
- emitter pixels 45 emit red light
- emitter pixels 44 emit green light
- emitter pixels 47 emit blue light, red, green, and blue light, respectively, will be emitted when an electrical potential is applied between cathode 46 (deposited atop pixels 44, 45, and 47) and anode 38 via electrical circuit 48.
- Fig. 6 illustrates the technique of Fig. 5 from a top view.
- Mask 30 in Fig. 6 includes linear arrays 52, 54, and 56 of channels (holes) 32, corresponding to the different pixel arrays 44, 45, and 47 of Fig. 5.
- Mask 300 is a slit mask including an elongated opening (channel) 302, and mask 300 is positioned atop mask 30 such that channel 302 leaves linear array 56 of channels 32 of mask 30 unshielded, while shielding linear arrays 52 and 56 of channels 32.
- Mask 30 seals against top surface 42 of hole-transporting material 36 (not shown) and mask 300 seals against mask 30 after deposition of a first emitter material 44 in channels 32 of array 54.
- Mask 300 then is re-placed so as to expose array 54 of channel 32, while sealing against mask 30 so as to shield arrays 52 and 54.
- a second emitter material 45 then is deposited in channels of array 56
- mask 300 then is re-placed so as to expose array 52 while shielding arrays 54 and 56
- a third emitter material 47 is deposited in channels 32 of array 52. Both masks then are re-placed (removed).
- the technique illustrated in Figs. 5 and 6 can be carried out by hand under a stereoscope at resolution of about 200 microns, and at higher resolution using a rotation and alignment stage apparatus of the type readily available and usable by those of ordinary skill in the art.
- Fig. 7 illustrates a technique similar to that illustrated in Figs. 5 and 6, where a masking system including multiple masks is used and individual masks are re-placed not by being re-oriented relative to a substrate surface, but being removed between deposition steps.
- the arrangement in Fig. 7 involves selective deposition of a variety of materials on a surface 70 of a substrate 72.
- Masks 30, 300 and 310 are stacked, in that order, on a surface 70.
- Mask 30 includes a plurality of channels 32
- mask 300 includes a plurality of channels 302
- mask 310 includes a plurality of channels 312.
- the masks are in register with each other such that in some cases channels of all three mask are in register with each other, in other cases channels of two masks only are in register with each other, and in other cases a channel of one mask is not in register with any channel of any other masks. As illustrated, this results in an arrangement in which every third channel 32 of mask 30 is in register with channels 302 and 312, every third channel 32 is in register with channel 302 only, and every third channel 32 is in register with no other channel. Following arrangement of the masks in this manner on surface 70 to shield a first portion of surface 70, the surface is exposed to conditions allowing deposition of a first agent 314 on a second portion of surface 70.
- Agent 314 is deposited only at those regions in which channels 32, 302, and 312 of masks 30, 300, and 310, respectively, are in alignment. Following removal of the top mask 310, a portion of the first portion of surface 70, that is, regions in which channels 32 and 302 had been in alignment, but not in alignment with any channel 312 of mask 310, now are exposed for further deposition. Exposure of the surface to appropriate conditions results in deposition of agent 316 atop agent 314 (under conditions where agent 316 can be deposited atop agent 314) as well as deposition at regions in which channels 302 and 32 had been in alignment but shielded by mask 310.
- agent 318 Following removal of mask 300, additional regions of the first portion of surface 70 in register with channels 32 of mask 30, that had not been in register with channels of either of masks 300 and 310, experience deposition of agent 318 under exposure to appropriate conditions. Agent 318 also is deposited atop agents 314 and 316, where those agents are exposed, under conditions appropriate for such deposition. This technique can find use where it is desirable to expose, upwardly, different agents 314, 316, and 318. Where this is desired, the technique illustrated in either of Fig. 7 or in Figs 5 and 6 can be used. The technique of Fig. 7 is useful, in addition, where it is desired to have multi-layered structures for electronic or other purposes as would be apparent to those of ordinary skill in the art.
- Mask 30 is used to shield portions of a surface not in register with channels 32 from an agent. In all of the embodiments described herein, shielding can be accomplished by positioning mask 30 proximate to a surface (such as surface 42 of material 36). "Proximate" in this context can define contact, or can define positioning of the mask between a source of the agent and the surface upon which the agent is to be patterned. Preferably, mask 30 is brought into contact with the surface desirably patterned and it is a feature of the invention that the surface of mask 30 that is brought into the surface of the article to be patterned is flexible so that it can be brought into conformal contact with the surface of the article to be patterned.
- Conformal contact in this context is meant to define essentially continuous contact between portions of mask 30, other than channels 32, and the surface of the article to be patterned. This is to be distinguished from, for example, a metal screen or a rigid polymer, each of which can contact a surface to be masked but which are not flexible enough to conformally contact the surface. In particularly preferred embodiments, a surface of mask 30 seals against a surface of an article to be patterned.
- “Seal” in this context means that when the mask is sealingly engaged with a surface and a fluid is applied to the masked surface, the fluid is allowed to contact only those portions of the masked surface in register with channels 32 of the mask and the fluid does not pass under the mask and contact shielded portions of the article surface covered by solid portions of the mask, so long as the fluid does not degrade the mask or the surface to be patterned (in which case fluid could pass under the mask due to degradation of the mask and/or surface).
- "Sealing” in this context is to be distinguished from the operation of other rigid or flexible masks that may be brought into conformal contact with a surface, but that can not seal against the surface.
- the surface of mask 30 that is brought into contact with a surface to be masked is flexible and polymeric, and preferably the entire mask 30 is flexible and polymeric.
- the surface of mask 30 used to mask a surface of an article is elastomeric, which allows the mask to readily seal the article to be masked, and in particularly preferred embodiments the entire mask 30 is elastomeric .
- elastomeric defines an elastic polymer. Where mask 30 is flexible or elastomeric in its entirety, the masking of non-planar surfaces is facilitated. "Non-planar" includes curved surfaces. The mask of the invention can readily conform to surfaces having relatively small radii of curvature.
- masks of the invention can be used to pattern agents on . surfaces having both negative and positive radii of curvature, such as both concave and convex surfaces.
- Masks of the invention have been used to pattern agents on the interior and exterior of cylindrical substrates.
- Article 30 can be fabricated of an elastomer as described in co-pending, commonly- owned U.S. Patent No. 5,512,131, issued April 30, 1996 by Kumar, et al, entitled "Formation of Microstamped Patterns on Surfaces and Derivative Articles ", and as described in International Patent Publication No.
- WO 96/29629 of Whitesides, et al. entitled 'Microcontact Printing on Surfaces and Derivative Articles ", published June 26, 1996, both of which are incorporated herein by reference.
- One useful technique for fabricating article 30 involves spin coating an elastomer on a master (described above with reference to Fig. 1) rather than by simply pouring an elastomer precursor over a pattern as described by Kumar, et. al. This allows for even application of a layer of defined thickness thinner than the height of features on the surface of the master that create channels in the mask.
- Elastomeric surfaces and masks of the invention should have a Shore A hardness of preferably from about 30 to about 70, so long as the elastomer can provide a seal where desired.
- Exemplary elastomers are disclosed in U.S. Patent No. 5,691,018 (Kelley et al., filed December 15, 1995), incorporated herein by reference.
- Substrates that can be masked and patterned using mask 30 of the invention can be essentially any material including polymers, metals, ceramics, oxides, and the like. Silicon and silicon dioxide can be patterned using mask 30.
- any of a wide variety of agents can be applied to portions of an article of a surface remaining unshielded (in register with channels 32) by mask 30. Many of these are “dry” processes, and others involve “wet” chemical processing.
- the agent can be a precursor of a chemical vapor deposition product, that is, an article can be masked using mask 30 and exposed to chemical vapor deposition conditions whereupon a product, defining the agent, is deposited in unshielded portions in register with channels 32.
- Other "dry” processes include reactive ion etching or thermal or e-beam evaporation or sputtering of metals, metal oxides, and ceramics.
- Metal deposition such as "wet" electrochemical deposition or electroless deposition, can be carried out from fluid precursors defining electrochemical or electroless plating baths.
- a prepolymeric fluid precursor can be used, such as a fluid containing species that can react to form a thermoset polymer at unshielded portions, or a fluid pre-polymer that can be polymerized at unshielded portions via photolysis, convective or radiative heat, free- radical polymerization, and the like.
- a relatively low-melting polymer can be applied in a molten form, allowed to solidify at unshielded portions, followed by removal of the mask.
- polymers that are suitable include polyurethane, polyamides, polycarbonates, polyacetylenes and polydiacetylenes, polyphosphazenes, polysiloxanes, polyolefins, polyesters, polyethers, poly(ether ketones), poly(alkylene oxides), poly(ethylene terephthalate), poly(methyl methacrylate), polystyrene, and derivatives and block, random, radial, linear, or teleblock copolymers, cross-linkable materials such as proteinaceous material and/or blends of the above. Gels are suitable where dimensionally stable enough to maintain structural integrity upon removal of mask 30 from the substrate surface.
- Monomers can be used alone, or mixtures of different monomers can be used to form homopolymers and copolymers.
- Non-linear and ferroelectric polymers can be advantageous.
- a polymerizable or cross-linkable species including an admixed biochemically active agent such as a protein can be made to form a pattern on a substrate surface according to the described technique.
- carboxylated DextranTM can carry admixed protein, be introduced into channels 32, and hardened.
- the article can be exposed to a medium suspected of containing a biological binding partner of the biochemical agent, and any biochemical binding or other interaction detected via, for example, diffraction, or via a change in coupling between waveguide cores as described more fully below.
- a species such as polymerizable or cross-linkable species can entirely coat a surface, mask 30 can be placed adjacent the surface, a biological agent can be introduced into channels 32 and allowed to admix with the polymerizable or cross-linkable species, and prior to or subsequent to removal of mask 30 species on the surface can be polymerized or cross-linked.
- a surface having a pattern of biological agent compounded therein is produced, and can serve as a sensor for a biological binding partner of the biological agent via change in refraction or diffraction of light at the surface.
- a patterned article is created using mask 30 that is dissolved or dispersed in a fluid carrier to form fluid precursor which is introduced into channels 32, whereupon the fluid carrier or solvent dissipates (e.g., is removed via evaporation from the mold channels and/or absorption into the substrate or mask 20).
- a patterned structure erected is an inorganic structure, such as a salt or ceramic.
- a salt soluble in a fluid precursor can be prepared as a solution defining a fluid precursor that is introduced into channels 32 and precipitated as a patterned salt structure by removal of solvent via evaporation, adsorption, or other physical or chemical change to the surrounding environment.
- Inorganic salts or ceramics can be carried as a suspension in a fluid carrier, flowed into channels 32, and precipitated or deposited.
- Metals such as those commonly deposited from pastes in accordance with thick-film silk- screening techniques, can be applied to regions of a substrate surface defined by channels 32 where a paste is sufficiently fluid, or the paste and/or metal can be carried in a fluid as a suspension or sol in a fluid precursor.
- Those of ordinary skill in the art will recognize that a wide variety of non-electrically conductive, electrically semi-conductive, and electrically- conductive structures can be patterned proximate a substrate surface according to the inventive technique.
- Fluid precursors of inorganic materials can be used to form structures, such as waveguides, from materials such as TiO 2 , TiO 2 /SiO 2 , ZnO, Nb 2 O 5 , Si 3 N 4 , Ta 2 O 5 , Hf0 2 , ZrO 2 , or the like.
- materials such as TiO 2 , TiO 2 /SiO 2 , ZnO, Nb 2 O 5 , Si 3 N 4 , Ta 2 O 5 , Hf0 2 , ZrO 2 , or the like.
- U.S. Patent Nos. 5,009,483, 5,369,722, and 5,009,483, each incorporated herein by reference, describe many suitable precursor and waveguide materials.
- Dye-doped fluid precursors can be used, and are advantageous in many situations.
- Another fluid precursor can be a sol-gel precursor, and sol-gel techniques known to those of skill in the art can be used to create the solid structures in patterns, according to the invention.
- Ferroelectric and electrooptic materials and sol-gel processing of a variety of precursors to form a variety of species is well known to those of ordinary skilled in the art and can be applied and exploited by the method of the invention.
- materials such as PbScTa0 3 , (Pb, La)TiO 3 (PLT), LiNbO 3 , KNb0 3 , LiTa0 3 , potassium diphosphate, potassium triphosphate, PbMo0 4 , Te0 2 Ta 2 O 5 BaTi0 3 , BBO crystals, Ba,.
- sol-gel precursors that can define fluid precursors of the invention include precursors of multicomponent glasses or ceramics containing at least one oxide, such as silicate glasses or ceramics containing the oxides of aluminum, boron, phosphorus, titanium, zirconium, sodium, etc...
- sol-gel precursors appropriate for use are precursors of hybrid materials or organically modified ceramics, such as precursors of silicon oxycarbide or ORMOCERs.
- sol-gel precursors appropriate for use are described by Brinker and Scherer, in Sol-Gel Science; Academic Press, San Diego, 1990; Dislich, Transformation of Organometallics into Common and Exotic Materials; Nijhof, Dordrecht, 1998, volume 141; Pani, et al., J. Am. Ceram. Assoc, 1994, 77, 1242; Ramamurthi, et al., Mat. Res. Soc. Symp. Proc, 1992, 271, 351; Peiying, et al., Sensors and Actuators, 1995, A49, 187; Rao, J Electrochem.
- sol-gel precursor a hydrolysis and polycondensation reaction takes place, preferably a two-step reaction.
- the working examples described herein use tetramethylorthosilicate as the main constituent in glasses formed according to this reaction. Other alkoxides react similarly.
- Sol-gel precursors that include mixtures of glasses or glasses that are mixtures of compounds. These structures can be deposited in any pattern that corresponds to a pattern defined by channels 32 and can include dimensions through a wide range as described herein.
- a biologically active agent can be dissolved or suspended in a fluid carrier as a fluid precursor and introduced into channels 32 adjacent portions of a surface masked with mask 30 and, prior or subsequent to removal of the mask, allowed to engage in a biochemical interaction proximate regions of substrate the surface in register with channels 32.
- a biochemical agent can include a biotin linker while the substrate surface carries immobilized avidin, and biochemical interaction can be allowed to take place at regions of substrate the surface in register with channels 32 in this manner, linking the biochemical agent to the substrate surface at those regions.
- Biochemical agents can be immobilized proximate regions of the substrate surface according to other techniques as well.
- a biological agent such as a protein can be non-covalently immobilized at regions of the substrate surface in register with channels 32.
- a hydrophobic chemical moiety can be coupled to the biochemical agent at a region of the agent remote from its active site. In this manner, the agent can be hydrophobically coupled to the surface and maintain exposure, away from the surface, of its biochemically active region.
- One of ordinary skill in the art can conduct a simple test to determine whether a biochemical agent is suitable for use with the described technique.
- the binding constant of a candidate biochemical agent for a target species can be determined using standard ELISA techniques.
- the candidate biochemical agent can be hydrophobically immobilized (or immobilized in any other manner described herein or known to those of ordinary skill in the art, for example via a polyamino acid tag coupled to a metal ion immobilized at the surface by a chelating agent) at a variety of surfaces, and then assays can be performed to determine whether the agent has retained its ability to biologically bind to the target species or has been denatured and is unable to bind (this exemplary test is particularly useful in connection with biological agents that, in their native form only, bind target species, but when denatured do not bind the target species).
- Biochemical recognition can be exploited in immobilization of a particular biochemical agent desirably patterned on a substrate surface.
- a first agent can be immobilized (for example using hydrophobic coupling) at regions of the substrate surface (in register with channels 32), and a second agent (which is a biological binding partner of the first agent) then can be immobilized at regions other than those regions (for example via the technique illustrated in Figs. 5-7).
- Biochemical recognition involving partners also can be exploited to trap biological agents at regions of the substrate surface using other biological agents that have been immobilized at those regions via mask 30.
- Biochemical recognition involving partners such as antibody/antigen, antibody/hapten, enzyme/substrate, enzyme/inhibitor, enzyme/cofactor, biotin/avidin, binding protein/substrate, carrier protein/substrate, lectin/carbohydrate, receptor/hormone, receptor/effector, complementary strands of nucleic acid, repressor/inducer, and the like can be exploited in connection with the technique.
- Those of ordinary skill will recognize a variety of uses for placement of such biochemically active agents at predetermined portions of a substrate surface in a pattern, for example as disclosed in co-pending, commonly-owned U.S. Patent No. 5,512,131 of Kumar, et al. and International Patent Application Publication No. WO 96/29629, both referenced above.
- a fluid precursor applied to a surface through channels 32 of mask 30 to form an agent at unshielded portions of the surface and register with channels 32 carries a suspended or dissolved chemically active agent that is an activating agent as described in a co-pending, commonly owned U.S. application serial no. 08/616,692 of Hidber, et al. entitled “Microcontact Printing of Catalytic Colloids", and corresponding international patent publication WO 97/34025, both incorporated herein by reference.
- a fluid carrier When a fluid carrier is used in this and other embodiments, it can form part of a species or article immobilized proximate the substrate surface or can dissipate, for example via evaporation or adsorption into the mask or substrate surface, leaving the species carried in the fluid carrier immobilized at the surface.
- a non-limiting list of chemically active agents that can be patterned on a surface in accordance with the invention also includes agents as described by Lando (U.S. Patent Nos.
- catalytic activating agents such as finely distributed metal particles and clusters such as conventional metal powders, substrate-fixed metal clusters or multimetallic clusters that are well known as valuable heterogeneous and homogeneous catalysts in organic chemistry, inorganic chemistry, and electrochemistry, etc.
- such agents can include those capable of being applied to unshielded portions of a surface through channels of a mask of the invention in a form in which it can effect a chemical reaction (such as a metal deposition reaction), and immobilized at the surface with a degree of adhesion and for a period of time sufficient to participate in the desired chemical reaction.
- a chemical reaction such as a metal deposition reaction
- the chemically active agent can participate in a desired chemical reaction with the mask in position at the surface.
- the chemically activation can be deposited at the surface in desired regions using the mask, followed by removal of the mask, followed by a second step involving the chemically activate agent.
- a catalyst can be deposited in desired regions using mask 30, mask 30 can be removed, and the catalytically active regions of the surface (locations where channels 32 had been) can promote metal deposition at those regions selectively.
- one class of activating agents provided in accordance with one embodiment of the invention are distinguished from prior art agents applied with an applicator such as a stamp, for example as disclosed by Lando (U.S. Patent Nos. 3,873,359, 3,873,360, and 3,900,614), in that the activating agent of the present invention is in a form suitable for effecting reaction such as metal plating or catalytic action when transferred to the surface.
- Metal deposition reactions contemplated include electrochemical deposition and electroless deposition, generally involving reduction of a metal cation to create the metal, facilitated in part by the lowering of the electrochemical potential involved in the deposition.
- Activating agents that are finely distributed metal particles and clusters such as conventional metal powders, including substrate-fixed metal clusters or multimetallic clusters are suitable for use as activating agents in accordance with the invention, and are well known as valuable heterogeneous and homogeneous catalysts in organic, inorganic, and electrochemistry.
- exemplary activating agents include one or more metals of periodic table groups lb, lib, III, IV, V, VI, Vllb, VIII, lanthanides, and actinides, preferably copper and any metal more noble than copper, in particular Pd, Au, Ag, Pt, and Cu.
- Hydrogenation catalysts for example those effective in hydrogenating olefins or aromatics, as in the partial hydrogenation of benzene to form cyclohexene, with a substrate-fixed ruthenium activating agent or bimetallic activating agent (e.g. Ru/Sn) are contemplated.
- ruthenium activating agent or bimetallic activating agent e.g. Ru/Sn
- Zirconium and titanium catalysts are suitable for use in the invention that catalyze polymerization, such as polymerization of olefins such as ethylene, and these are intended to form part of the invention.
- Other examples of catalytic activating agents include those used in Heck reactions, e.g. in the Pd-catalyzed reaction of bromobenzene and styrene to form stilbene.
- Activating agents that are heterogeneous catalysts are also useful as electrocatalysts in fuel cells (in particular substrate-fixed Pt and Pt/Ru clusters).
- Activating agents prepared according to he invention can be homogeneous catalysts, such as those used in two phase systems (for instance H 2 O/toluene), such as e.g. betaine-stabilized Pd clusters soluble in H 2 0.
- Activating agents that are embedded in polymers can be used to prepare materials for electronic, optical and magnetic applications.
- Suitable embedding polymers include organic polymers, such as poly-p-phenylene-vinylene, polymethyl methacrylate, polysilanes, and polystyrene, or inorganic polymers, such as zeolites, silicates, and metal oxides.
- organic polymers such as poly-p-phenylene-vinylene, polymethyl methacrylate, polysilanes, and polystyrene
- inorganic polymers such as zeolites, silicates, and metal oxides.
- the well-known sol-gel process can be used to incorporate metal clusters in amorphous metal oxide materials (e.g. SiO 2 ) as activating agents. Soluble metal clusters that are activating agents can also be surface-deposited to prepare novel materials for applications in optics and electronics, e.g. Pd on HOPG (highly oriented pyrolytic graphite).
- HOPG highly oriented pyrolytic graphite
- colloidal activating agents Especially preferred as activating agents in accordance with this embodiment of the invention are colloidal activating agents. Suitable colloid-forming species and colloids are described in Hidber, et al., referenced above, and in European patent publication no. 672765 by Reetz et al., published September 20, 1995, and incorporated herein by reference.
- a suspension of particulate species in a fluid carrier can be introduced into channels 32, followed by removal of the fluid carrier via dissipation, as discussed.
- the particulate species can be organic, inorganic, or polymeric material as described above, for example finely-ground polymeric, ceramic, or crystalline material, or can be in the form of microspheres.
- the application of microspheres in a predetermined pattern to a substrate surface can serve a variety of purposes that will be apparent to those of ordinary skill in the art upon reading the present disclosure, in light of the state of the art as set forth in several publications. An article by Lenzmann, et al., entitled “Thin-Film Micropatteming Using Polymer Microspheres", Chem.
- the spheres serve as a mask for zinc sulfide deposition on the substrate as a thin film by thermal evaporation in vacuum.
- the mask are removed from the substrate surface after evaporative deposition leaving behind a surface with zinc sulfide features located in the interstitial spaces of the densely-packed spheres.
- the lattice spacing of the resulting pattern is approximately 900 nanometers with individual trigonal pyramidal peaks.
- a particular concentration of polymeric microspheres is approximately 900 nanometers with individual trigonal pyramidal peaks.
- a fluid carrier in a fluid carrier can be selected without undue experimentation that, when introduced into channels 32, followed by evaporation of the fluid carrier, would result in microspheres selectively patterned at regions of a substrate surface in register with channels 32.
- Other materials that can be patterned on a substrate surface using masks of the invention include hydrogels, via dewetting; organometallic compounds, via evaporation; and the like.
- the material defining the mask of the invention should be selected, in conjunction with an agent applied to unmasked portions of a surface, or a fluid carrier of the agent, such that the mask is not adversely affected during deposition.
- an agent applied to unmasked portions of a surface, or a fluid carrier of the agent such that the mask is not adversely affected during deposition.
- This technique makes the process feasible where, in some cases, the process would be very difficult or impossible, such as conditions in which the channels of the mask are very, very small and it is desirable to apply an agent to regions of the surface and register with the channel from a fluid that is difficult to interject into the channels. For example, where it is desirable to isolate and manipulate small quantities of liquid for studying single molecules, or very small numbers of molecules, the technique is useful.
- the technique can be used to position, at separate, isolated regions of a substrate surface in register with channels of a mask, less than about 1 x 10 5 molecules, on average (the average number of molecules per channel), or less than about 1 x 10 4 molecules or less than about 1000 molecules, or 100 molecules, or 10 molecules, or even on average 1 molecule per region.
- This can be accomplished readily because the volume of a "microwell", defined by a channel of a mask and the portion of a surface of an article and register with the channel, can readily be determined and the concentration of molecules within a fluid introduced into such channels can be known. It is known, for example, that a 1 femtoliter vessel filled with a 1 nanomolar solution will contain, on average, 1 molecule.
- the present invention allows formation of an agent, or product of an agent, selectively at a surface at regions in register with a channel or channels of a masking system with particularly good edge resolution.
- Preferred edge resolution values listed below can be achieved in combination with other aspects of the invention, for example feature size (channel size), channel spacing, and the like.
- edge resolution of better than 500 nanometers can be achieved, more preferably better than 300 nanometers more preferably better than 200 nanometers, and more preferably still better than 100 nanometers.
- Edge resolution in this context, means that the edge of an agent formed at a surface, using a masking system of the invention, followed by removal of the masking system where the agents remains at the surface in the shape of the channel, deviates from the edge of the channel used to create the agent by no more of about 500 nanometers or more preferred values. That is, where a channel of a perfect square shape is used to form an agent at a surface of an article, the edges of the square agent deviate from a perfect line by no more than about 500 nanometers or more preferred ranges.
- a resulting circular agent is deposited at a surface of a substrate where the periphery of the circle of the agent differs from a perfect circle by no more than about 500 nanometers or more preferred ranges.
- not all channels will be perfectly square, circular, or of other specific geometric shape, but will be of a variety of shapes for a variety of purposes. Edge resolution of an agent created using such a channel defines deviation from the shape defined by the channel.
- One process for filling channels involves "discontinuous dewetting" which takes advantage of the difference in interfacial free energies of the channels and substrate surface, and the liquid that desirably fills microwells defined thereby (Jackman, et al., Anal. Chem. 1998, 70, 2280-7).
- liquid is allowed to drain off of an array of microwells defined by mask channels and a substrate surface either by gravity or by pulling the array from a bulk solution.
- the microwells will remain filled with approximately equal volumes of fluid as the fluid dewets the surface of the material.
- Fig. 8 illustrates schematically discontinuous dewetting.
- microwells 80 are filled with a fluid 84 as the substrate/mask assembly is pulled upwardly, in a vertical orientation, from a container containing fluid 84.
- the technique illustrated schematically in Fig. 8 is successful where three criteria are met.
- the fluid that is to fill the microwells should not swell.
- the material defining the mask manufactured non-polar organic liquids, e.g. haptene, toluene, methylene chloride, acetone, and others swell PDMS).
- the fluid should have a low viscosity (preferably less than about 500 cps) so that it begins to dewet the surface on a reasonable time scale.
- the fluid must have a receding contact angle on the substrate (interior surfaces of channels 32 and regions 80 of the surface of substrate 82 and register therewith) that falls in an appropriate range. Specifically, where a PDMS stamp is used and a surface of substrate 82 has similar hydrophobicity or hydrophilicity, fluids that have receding contact angles that fall between about 16 ° and about 81 ° will fill the microwells easily by discontinuous dewetting. Liquids with contact angles above 81 ° tend to bead on the substrate (PDMS) and do not spread to fill the wells. Where a PDMS mask is used, table 1 presents a set of liquids that will fill microwells defined by the mask relatively readily, together with their interfacial free energies and contact angles on PDMS.
- a volatile fluid is used to fill the microwells
- problems associated with rapid evaporation of the fluids can be experienced unless steps are taken to counteract evaporation.
- steps can include the use of high ionic strength, buffered, aqueous solutions (where aqueous solutions are desired, for example, for biological experiments), and closed, humidity- controlled environments.
- Evaporation problems can be avoided completely by using less volatile solvents or co-solvents (e.g., triethyleneglycol).
- Individual microwells also can be addressed with different fluids using a sharp glass probe (approximately 15 microns in diameter) that was used to hold a drop of fluid and to drag the drop of fluid across an array of microwells, filling a single line of microwells selectively.
- a sharp glass probe approximately 15 microns in diameter
- One probe can be made by dipping an optical fiber (125 microns diameter) into 48% HF for about 10 minutes.
- Individual wells can be selectively addressed in this manner by mounting a probe on an XYZ stage.
- a masking system is positioned adjacent a surface of an article, an agent is applied through a channel in the masking system to a surface of the article, and the masking system is re-placed followed by further application of an agent to a surface of the article.
- this can involve moving, or re-orienting a mask on a surface so that channels in the mask align with different portions of the surface, and reapplication of an agent, or application of a new agent, through channels in the mask.
- This can be used to create continuous, or connected patterns on a surface using a mask with discontinuous, or non-connected channels, and this can have particular use in the microelectronics industry.
- Example 8 a technique is described in which a single mask is used in two steps to direct a patterned array of isolated features in a first step, followed by re-orientation of the mask at the surface to produce the same pattern at the surface, but shifted laterally, the second pattern connecting the isolated regions defined by the first pattern to form an overall connected pattern.
- the resulting pattern as illustrated in Fig. 18, is a grid pattern that would have been impossible to produce using a single mask deposition step because it would have required the mask to contain a series of disconnected squares.
- Example 1 Fabrication of a Mask A polydimethylsiloxane (PDMS) mask was fabricated.
- PDMS polydimethylsiloxane
- a master including an array of photoresist posts on a silicon wafer was created by photolithography.
- the master consisted of an array of features in photoresist created on a silicon wafer. It was generated either by "rapid prototyping" (for feature sizes 50 ⁇ m) - by using a high-resolution transparency as the photomask for photolithography - or by performing standard photolithography with a chrome mask (for feature sizes ⁇ 50 ⁇ m).
- the photomasks for performing photolithography were either rigid chrome masks (Advanced Reproductions, North Andover, MA; features - ⁇ 50 ⁇ m) or transparencies (produced using Herkules PRO image setter, 3387 dpi, Linotype-Hell Co., Hauppauge, NY, by a desktop publishing company, Pageworks, Cambridge St., Cambridge, MA; features ⁇ 50 ⁇ m).
- SU-8 50 SU-8 5
- resist as received from Microlithography Chemical Corp., Newton, MA
- Posts with diameters between 50 and 500 microns were 50 microns thick; for smaller (1.5 to 50 micron diameter) posts, the thickness of photoresist was approximately equal to the diameter of the posts.
- Sylgard 184 silicone elastomer, parts A and B (10:1, by weight, Dow Corning) were mixed in a container and trapped air was removed under vacuum.
- PDMS was spin-coated onto the master so that the thickness of the layer of polymer was less than the height of the posts of photoresist.
- the elastomer mixture was spin-coated at 3000 rpm for 40 s to yield a 30 micron layer of polymer; for thinner posts, the elastomer mixture was diluted in toluene and then spin-coated at 3000 rpm for 60 s.
- the PDMS was cured at 65 deg C for one hour.
- a 1-mm thick layer of elastomer mixture was then painted around the pattern and cured.
- the polymer was peeled away from the master, using the thicker surround of PDMS as a support (in the case of the thinner masks), to yield a flexible, elastomeric membranous mask containing an array of holes with diameters varying from 1.5 to 500 microns.
- the thicknesses of the elastomeric masks formed by this technique were determined: speed and duration of spin-coating; lateral dimensions and spacing of features on the master; and the viscosity of the prepolymer (which changes as a function of time).
- speed and duration of spin-coating For a given master (50 micron diameter circles, spaced by 50 microns) a given spin speed (3000 rpm) and PDMS mixed and degassed in vacuo for approximately 20 minutes before spin- coating, the mask thickness varied between 26 and 53 microns (at a minimum, i.e., between a set of four holes; and between 45 and 55 microns in the regions immediately adjacent to each feature) for different periods of spin-coating.
- the thickness of the mask was greater than the height of the features of photoresist on the master: the film of PDMS contained no holes.
- Spin-coating for more than 160 seconds resulted in defects in the masks that were significantly larger than the features.
- the masks were self-supporting and contained open holes. We typically used masks at the thicker end of this range to facilitate handling.
- a drop of fluid such as (in the case of a PDMS mask), 2-propanol or ethanol onto the mask after bringing it into contact with a substrate to reduce the tendency of the mask to stick to itself.
- a second layer of a non-elastomeric polymer could be added to the elastomeric mask by spin-coating, for example, a layer of epoxy onto PDMS before its removal from the master.
- the composite mask did not tend to stick to itself, but still maintained its ability to seal against both planar and nonplanar surfaces.
- a cut was made around the border with a scalpel and then, using a pair of tweezers, the mask was peeled slowly from the master.
- the masks were brought into contact with the substrate to be patterned using a pair of tweezers.
- the mask wet the surface and formed a reversible seal with it. If the mask was not lying flat on the substrate to begin, the mask was removed with tweezers, replaced on the surface, and allowed to reseal.
- a drop of 2- propanol was often placed on a mask in contact with a substrate. This procedure made it easier to ensure that the mask was lying flat on the substrate.
- An agent was applied through the channels of the mask of Example 1 so as to form a patterned structure adhered to a substrate.
- a surface of the mask of Example 1 was sealed against a silicon substrate surface.
- the masked surface was exposed to conditions of gold e-beam deposition, resulting in deposition of gold on surfaces of the silicon substrate in register with channels of the mask.
- deposition of a thin layer of titanium (5 nm. -0.1 nm/s) followed by a layer of gold (50 nm, -0.3 nm/s) by electron-beam evaporation (based pressure -5 x 10 "7 Torr) onto the masked substrate resulted in metal on both the substrate and the mask.
- a "dry” lift-off technique of the invention was carried out by simply peeling the mask from the surface and allowing the gold to remain adhered to the silicon surface at regions in register with channels 32.
- Fig. 9 is an SEM image of resulting 50 micron circles of gold patterned on a silicon substrate according to this example. Excellent edge resolution of the gold features was observed.
- Example 3 A "Dry" Lift-Off Method: (B Etching Through an Elastomeric Mask Followinged by Removal of the Mask
- an agent was delivered through a mask: in this example the agent was an etchant.
- the masked surface was then exposed to Reactive Ion Etching (RIE), i.e., SF6 gas in a plasma discharge for 8 min.
- RIE Reactive Ion Etching
- the mask was then removed from the surface to reveal "wells" etched into the silicon that were in register with the channels in the PDMS mask.
- Patterning by RIE usually requires photolithography to create a mask followed by a wet lift-off: these two steps are bypassed by using an elastomeric mask.
- Fig. 10 is an SEM image of the 3 micron diameter wells in silicon. Such structures could be used as nanovials for chemical analysis of very small volumes of samples.
- Example 4 Fabrication of Single-Color and Multicolor Electroluminescent Pixels
- ITO indium tin oxide
- Fig. 11 shows an image of the electroluminescence from 500 micron diameter pixels.
- Figs. 12 and 13 show photoluminescence images of Alq3 pixels with diameters of 50 and 3 microns, respectively, patterned on a silicon substrate.
- Multicolor pixels based on organic electroluminescent molecules can be created easily using two PDMS masks.
- TPB 1,1,4,4-tetraphenyl- 1,3 -butadiene
- Nile Red dye was thermally evaporated through the masks to pattern the first line of pixels.
- the upper mask was then re-placed by being removed and realigned with the line of pixels adjacent to those exposed previously: Nile Red dye was then evaporated through the masks to pattern a second line of pixels.
- the upper mask was then removed and realigned with the remaining line of unpatterned pixels: Alq3 was then evaporated through the masks. Lines of pixels of molecules that display red, green, and blue electroluminescence were revealed when both the upper and lower masks were removed.
- the conformal seal of the PDMS masks with the substrate to be patterned makes it possible to deposit materials from the liquid phase, for example, by electroplating.
- the surface of the PDMS mask had been oxidized for 30 s using a plasma cleaner (Harrick, PDC-23C) to render the surface of the mask hydrophilic so that the plating solution would wet it.
- Fig. 14 is an optical image of the 50 micron diameter circles of silver electroplated onto gold.
- 6.5 g tetramethylorthosilicate (TMOS) and 1.5 g 0.1 M oxalic acid were mixed for 1 min and left to stand for 1 h: a drop of this mixture was placed on top of the PDMS mask and a vacuum was applied to remove air from the wells (described in Example 5) filled with liquid.
- the silicon substrate and mask were tilted to drain the liquid from the surface, and then left in a sealed container along with a drop of ammonium hydroxide for 18 h.
- TMOS solution gels by hydrolysis and polycondensation under basic conditions to yield a glassy material: when the PDMS mask was removed from the silicon substrate, glassy structures in register with the channels in the mask were revealed.
- Fig. 15 is an optical image of the circles of solid glass on silicon created using this method.
- Example 7 Application of a Biological Agent From the Liquid Phase: Patterning Proteins Through an Elastomeric Mask A PDMS mask containing circular channels of 3 microns in diameter, separated by 7 microns, was brought into conformal, sealing contact with a gold surface coated with a monolayer of hexadecanethiol. A buffer solution (100 mM Tris, 20 mM boric acid) containing 2 mg/ml of a protein, bovine carbonic anhydrase, that had been fluorescently labeled with fluorescein isothiocyanate was prepared. A drop of the solution of protein was placed on the PDMS mask to fill the wells defined by the channels in the mask and the hydrophobic gold surface; trapped air was removed by vacuum.
- a buffer solution 100 mM Tris, 20 mM boric acid
- Alq 3 tris(8-hydroxyquinoline) aluminum
- Shadow masks or patterned photoresist, but are usually soluble in the solvents used for lift-off since they may be useful in optical displays.
- Example 11 Application of Conducting Polymer Precursors by Chemical Vapor Deposition f CVD) Through a Mask
- a mask 50 ⁇ m holes, spaced by 50 ⁇ m
- a substrate Si or indium tin oxide
- CVD system base pressure -0.03 Torr
- PPV was prepared from a dichloro-p-xylene starting monomer, in a method similar to CVD of parylene.
- the monomer (c_, ⁇ '-dichloro-p-xylene) was heated to 60 °C and brought to a furnace where it was pyrolized at 675 °C to form a chloro-p-xylylene.
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Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000545072A JP2002512124A (en) | 1998-04-21 | 1999-04-20 | Use in the manufacture of devices including elastomeric masks and pixelated electroluminescent displays |
CA2329412A CA2329412C (en) | 1998-04-21 | 1999-04-20 | Elastomeric mask and use in fabrication of devices, including pixelated electroluminescent displays |
EP99918698A EP1080394A1 (en) | 1998-04-21 | 1999-04-20 | Elastomeric mask and use in fabrication of devices, inlcuding pixelated electroluminescent displays |
US09/694,074 US7282240B1 (en) | 1998-04-21 | 2000-10-20 | Elastomeric mask and use in fabrication of devices |
US11/890,326 US20100239833A9 (en) | 1998-04-21 | 2007-08-06 | Elastomeric mask and use in fabrication of devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6374298A | 1998-04-21 | 1998-04-21 | |
US09/063,742 | 1998-04-21 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US6374298A Continuation-In-Part | 1998-04-21 | 1998-04-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/694,074 Continuation US7282240B1 (en) | 1998-04-21 | 2000-10-20 | Elastomeric mask and use in fabrication of devices |
Publications (2)
Publication Number | Publication Date |
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WO1999054786A1 true WO1999054786A1 (en) | 1999-10-28 |
WO1999054786A9 WO1999054786A9 (en) | 2000-02-03 |
Family
ID=22051194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US1999/008623 WO1999054786A1 (en) | 1998-04-21 | 1999-04-20 | Elastomeric mask and use in fabrication of devices, inlcuding pixelated electroluminescent displays |
Country Status (4)
Country | Link |
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EP (1) | EP1080394A1 (en) |
JP (1) | JP2002512124A (en) |
CA (1) | CA2329412C (en) |
WO (1) | WO1999054786A1 (en) |
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Also Published As
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CA2329412A1 (en) | 1999-10-28 |
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JP2002512124A (en) | 2002-04-23 |
CA2329412C (en) | 2010-09-21 |
EP1080394A1 (en) | 2001-03-07 |
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