USRE43401E1 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- USRE43401E1 USRE43401E1 US12/369,914 US36991409A USRE43401E US RE43401 E1 USRE43401 E1 US RE43401E1 US 36991409 A US36991409 A US 36991409A US RE43401 E USRE43401 E US RE43401E
- Authority
- US
- United States
- Prior art keywords
- transistor
- gate electrode
- semiconductor device
- output terminal
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 85
- 239000003990 capacitor Substances 0.000 claims abstract description 63
- 239000000872 buffer Substances 0.000 claims description 19
- 239000004973 liquid crystal related substance Substances 0.000 claims description 18
- 239000011810 insulating material Substances 0.000 claims description 11
- 239000010408 film Substances 0.000 description 164
- 239000010410 layer Substances 0.000 description 58
- 238000000034 method Methods 0.000 description 45
- 238000010586 diagram Methods 0.000 description 33
- 239000012535 impurity Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 30
- 238000005401 electroluminescence Methods 0.000 description 29
- 238000005530 etching Methods 0.000 description 29
- 230000008569 process Effects 0.000 description 21
- 239000000463 material Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000000565 sealant Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000005001 laminate film Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004537 TaCl5 Inorganic materials 0.000 description 1
- 229910004546 TaF5 Inorganic materials 0.000 description 1
- 229910009035 WF6 Inorganic materials 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002365 multiple layer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WIDQNNDDTXUPAN-UHFFFAOYSA-I tungsten(v) chloride Chemical compound Cl[W](Cl)(Cl)(Cl)Cl WIDQNNDDTXUPAN-UHFFFAOYSA-I 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
- H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0202—Addressing of scan or signal lines
- G09G2310/0218—Addressing of scan or signal lines with collection of electrodes in groups for n-dimensional addressing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/027—Details of drivers for data electrodes, the drivers handling digital grey scale data, e.g. use of D/A converters
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0275—Details of drivers for data electrodes, other than drivers for liquid crystal, plasma or OLED displays, not related to handling digital grey scale data or to communication of data to the pixels by means of a current
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0289—Details of voltage level shifters arranged for use in a driving circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3275—Details of drivers for data electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L2029/7863—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
Definitions
- the present invention relates to an inverter, buffer, and level shifter, and to a semiconductor device using them.
- display device used within this specification includes a liquid crystal display device which employ liquid crystal elements in pixels, and a light emitting device which employ light emitting elements such as electroluminescence (EL) elements.
- semiconductor device indicates circuits that perform processing for inputting video signals into pixels disposed in the display device and displaying images. Pulse output circuits such as shift register, inverters, buffers, and level shifters, and amplification circuits such as amplifiers are included in the category of semiconductor devices.
- TFTs thin film transistors
- a driver circuit using TFTs is formed in a peripheral region of a pixel portion on a substrate simultaneously with pixel TFTs structuring pixels.
- the techniques contribute greatly to making a device small size and to reducing electric power Consumption, and accordingly, a display device has come to be indispensable for a portion such as a display portion of a mobile information terminal, which has remarkably been applied to the extensive fields in recent years.
- CMOS circuit in which an n-channel TFT and a p-channel TFT are combined are used as a circuit for structuring semiconductor devices.
- a CMOS inverter is shown in FIG. 11A as one example of the CMOS circuit.
- a p-channel TFT 1101 and an n-channel TFT 1102 are combined, and an output signal is obtained by inverting the polarity of an input signal (see FIG. 11B ).
- FIG. 11C there is a state in which a certain load (Load) is attached to the later state of the CMOS inverter. If the load is excessive with respect to the size of the TFTs structuring the CMOS inverter at this point and a pulse is input from an input (In), there will be a case in which an output pulse, namely an output (Out i) of an inverter (Inv 1 ) in FIG. 11C , is greatly dulled in both rise and fall of the pulse, compared to the waveform of the input signal, as shown in FIG. 11E . This is because the CMOS itself inverter does not have the capability of supplying a sufficient amount of electric charge for driving the load.
- a certain load Load
- a buffer is normally formed between a driver circuit portion and a pixel portion.
- a plurality of inverter stages are disposed in series as shown in FIG. 11D , and driving of the final load can be performed without problem by driving the inverters that are gradually increased in size.
- the waveform of an output (Out ii) of a buffer in the final stage (Inv 4 ) is not greatly dulled and thus is output as a normal pulse, and the load in the later stage can be driven.
- Display devices have come to be employed in the display portion of many types of electronic devices in recent years, and there is steady expansion in the number of fields in which display devices are used. Display devices are recently being actively employed even in relatively low cost electronic equipment, and therefore further cost reductions are desirable.
- a multiple-layer structure is formed for a display device by repeatedly performing processes of film formation, exposure to light using a photomask, and etching.
- the extreme complexity of the processes therefore invites an increase in manufacturing costs.
- the driver circuit and the pixel portion are formed integrally on the substrate as discussed above, some defects become a problem which affects the entire manufactured product, and has a large influence on yield.
- a method in which the number of processes is reduced as much as possible, and manufacturing can be performed simply in a short period of time can be given as one method of achieving the cost reduction.
- a display device is manufactured with a structure that uses TFTs with a single polarity type, n-channel TFTs or p-channel TFTs, instead of a CMOS structure for the driver circuit. Processes for adding an impurity which imparts a conductivity to a semiconductor layer can thus be simply cut in half, and in addition, the number of photomasks can be reduced. This is extremely effective from the vie point of cost-related merits.
- FIG. 12A shows an example in which an inverter is structured by two n-channel TFTs.
- the inverter is a two input type inverter with signals input to gate electrodes of TFTs 1201 and 1202 .
- An inverted signal of one input is used as the other input.
- gate electrode, input terminal, and output terminal and the terms “gate electrode, source region, and drain region” are used separately in this specification for the names of the three electrodes of the TFT in explaining the circuit structure and operation. This is because, although there are many cases in which the voltage between the gate and the source is considered in explaining TFT operation, it is difficult to clearly differentiate the source region and the drain region of the TFT based upon the structure of the TFT and the use of unified names may, instead of being helpful, lead to confusion developing.
- the terms input terminal and output terminal are used in explaining the input and output of signals.
- the input terminal or the output terminal is referred to as the source region, and the other is referred to as the drain region, in explaining the relationship of the electric potential between the electrodes of the TFT.
- the L level is input to the gate electrode of the TFT 1202 when the H level is input to the gate electrode of the TFT 1201 in FIG. 12A .
- the TFT 1201 is therefore on, and the TFT 1202 is therefore off. Accordingly, the electric potential of the output (Out) beings to rise, and the voltage between the gate and the source of the TFT 1201 becomes equal to the threshold value VthN when the electric potential of the output (Out) becomes (VDD ⁇ VthN). That is, the TFT 1201 turns off at this instant, and therefore the electric potential of the output (Out) cannot rise any further.
- FIG. 12B A circuit in which a plurality of stages of the inverters shown FIG. 12A are connected in series is shown in FIG. 12B .
- the output of a certain stage becomes the input of the next stage with this type of circuit.
- waveforms in which the amplitude is attenuated by VthN with respect to the Input signal appear in an output (Out i) of a first stage and an output (Out ii) of the next stage.
- An output (Out iii) of a third stage is additionally attenuated by VthN compared with the first stage output ( FIG. 12C ).
- attenuation of the amplitude due to the threshold voltage continues to develop and overlap throughout the stages, the amplitude of the waveform shrinks rapidly, and the circuit cannot function as a satisfactory circuit.
- a boot strap method is known in order to resolve this problem in structuring the circuit by using single polarity type TFTs.
- a basic circuit which functions by using the boot strap method is shown in FIG. 13A .
- FIG. 13A is an inverter structured by three n-channel TFTs 1301 to 1303 and a capacitor means 1304 , as disclosed in JP 3092596 B.
- a signal is input to a gate electrode of the TFT 1303 , and the inverted signal of the signal is input to an input terminal of the TFT 1301 .
- FIG. 13B is a diagram showing an input signal (In), an electric potential (Vf) of a gate electrode of the TFT 1302 , and an output signal (Out).
- the electric potential of the gate electrode of the TFT 1301 is VDD to be in an on state, and therefore the electric potential of the gate electrode of the TFT 1302 is H level.
- the electric potential of the gate electrode of the TFT 1301 is VDD, and therefore the electric potential of an output terminal of the TFT 1301 , that is the electric potential of the gate electrode of the TFT 1302 , becomes (VDD ⁇ VthN) to place the TFT 1301 in an off state.
- the gate electrode of the TFT 1302 is thus placed in a floating state at this instant.
- the TFT 1303 turns off.
- the voltage between the gate and the source of the TFT 1302 rises above the TFT threshold voltage, the TFT 1302 therefore turns on, and the electric potential of an output terminal of the TFT 1302 is pulled up the to VDD side.
- the electric potential of the gate electrode of the TFT 1302 is (VDD ⁇ VthN) at this point, and the electric potential of the output terminal of the TFT 1302 can thus only increase to (VDD ⁇ 2VthN).
- the capacitor 1304 is formed between the output terminal and the gate electrode of the TFT 1302 , however, and the gate electrode of the TFT 1302 is in a floating state. Therefore the electric potential of the gate electrode of the TFT 1302 rises by ⁇ Vf shown in (ii) of FIG. 13B due to capacitive coupling along with the rise in the electric potential of the output terminal of the TFT 1302 . The electric potential of the gate electrode of the TFT 1302 is thus greater than VDD+VthN), and therefore the electric potential of the output terminal of the TFT 1302 then becomes equal to VDD.
- a dotted line denoted by reference number 1350 in (iii) of FIG. 13B is an output example in the case of using the inverter shown in FIGS. 12A and 12B .
- the inverter shown in FIG. 13A outputs an inverted signal without amplitude attenuation due to the threshold value of the TFT by the aforementioned procedure.
- a method of operating the electric potential of a node in a floating state by utilizing capacitive coupling between two nodes is referred to as a boot strap method.
- the rise time become long, or the boot strap may not function sufficiently and the amplitude of the output signal may not be able to be normalized (specifically, H level may not be sufficiently brought up), in the cases in which the load attached to the later stage of the output is additionally large, the amplitude of the input signal is small (H level is low), the threshold value of the TFT is large, and parasitic capacitance in the gate electrode of the TFT in a floating state is large during boot strap operations, and similar cases.
- the present invention has been made in view of the above, and an object of the present invention is therefore to provide a circuit which with a high load driving capability, which is structured to make a rise time short and to make the amplitude of an output signal normal in cases stated above.
- FIG. 1A there is a structure in which two TFTs are added to the structure of FIG. 13A .
- the TFTs 1302 and 1303 in FIG. 13A have roles for boot strap operation and for electrical charge and discharge of a load of a latter stage.
- TFTs 102 and 103 contribute only to boot strap operations in the structure shown in FIG. 1A
- TFTs 105 and 106 are formed as TFTs that perform electric charge and discharge of a load.
- iT is possible to obtain good operation with no loss of function even in the case in which the load attached to a later stage becomes somewhat large.
- the electric potential of a gate electrode of the TFT 102 in a floating state is taken as V 1
- the electric potential of an output electrode of the TFT 102 at this time is taken as V 2
- a capacitor 104 and a capacitance due to parasitic capacitance an the like exist in the gate electrode of the TFT 102 , and their values are taken as C 1 and C 0 , respectively.
- ⁇ V 1 there are two ways for increasing ⁇ V 1 , namely increasing the amount of fluctuation in the electric potential of the gate electrode of the TFT 102 in a floating state: (1) increasing the value of [C 1 /(C 0 +C 1 )], and (2) increasing ⁇ V 2 .
- the coupling capacitance C 1 between the gate electrode and the output electrode of the TFT 102 sufficiently is made large with respect to the parasitic capacitance C 0 .
- ⁇ V 2 [V 2 ( 1 ) ⁇ V 2 ( 0 )], and therefor a method of reducing V 2 ( 0 ) and a method of increasing V 2 ( 1 ) can be considered. It is difficult to increase V 2 ( 1 ) to be equal to or greater than VDD with this structure, and therefore the method of reducing V 2 ( 0 ) is employed.
- the voltage between a gate and a source of the TFT 102 can be increased by reducing V 2 ( 0 ), and a larger amount of drain current can be made to flow. Shortening of the rise time can thus be expected.
- a capacitor means 155 is formed between a gate electrode and an output terminal of a TFT 153 in addition to a capacitor means 154 formed between a gate electrode and an output terminal of a TFT 152 .
- the load driving capability can be increased with such structure, and therefore the number of stages for buffers and the like can be made smaller, which lead to redaction in the surface area occupied by circuits.
- the driver circuit and the pixel portion can be structured by using TFTs with the single polarity, and therefore a portion of processes for adding impurity elements to semiconductor layers can be omitted in a process of manufacturing a display device.
- FIGS. 1A to 1C are diagrams showing an embodiment mode of the present invention.
- FIGS. 2A to 2E are diagrams showing the electric potential of each node of the circuit shown in FIG. 1A to 1C during boot strap operation;
- FIG. 3 is a diagram showing the structure of a source signal line driver circuit used in a display device manufactured by an embodiment
- FIGS. 4A and 4B are diagrams showing the structure of a shift register used in a display device manufactured by an embodiment
- FIGS. 5A to 5C are diagrams showing the structure of a buffer used in a display device manufactured by an embodiment
- FIGS. 6A to 6D are diagrams showing the structure of a level shifter used in a display device manufactured by an embodiment
- FIGS. 7A to 7C are diagrams showing an example of a process of manufacturing a display device
- FIGS. 8A to 8C are diagrams showing the example of a process of manufacturing a display device
- FIGS. 9A and 9B are diagrams showing an embodiment of the present invention.
- FIGS. 10A to 10C are schematic and cross sectional diagrams of a display device
- FIGS. 11A to 11E are diagrams showing the relationship between CMOS inverter operation and load
- FIGS. 12A to 12C are diagrams showing inverter operation by single polarity TFTs
- FIGS. 13A and 13B are diagrams showing circuit operation in accordance with a boot strap method
- FIG. 14 is a diagram for explaining operational timing for a shift register
- FIG. 15 is a diagram showing the structure of a gate signal line driver circuit used in a display device manufactured by an embodiment
- FIGS. 16A to 16C are diagrams showing an example of a process of manufacturing a display device
- FIGS. 17A to 17G are diagrams showing examples of electronic equipment to which it is possible to apply the present invention.
- FIGS. 18A and 18B are diagrams showing an embodiment using a level shifter of the present invention.
- FIGS. 19A and 19B are diagrams showing an example of a process of manufacturing of a light emitting device
- FIGS. 20A and 20B are diagrams showing an example of a process of manufacturing of a light emitting device
- FIG. 21 is a diagram showing an embodiment of the present invention.
- FIGS. 22A to 22C are mask-layout diagrams of the structure shown in FIG. 21 , and a photograph of a manufactured circuit.
- FIGS. 13A and 13B Operation of the circuits shown in FIGS. 1A and 1B is explained.
- Basic circuit operation is explained using FIGS. 13A and 13B .
- the L level appears from a signal output portion (Out) when the H level is input to a first signal input portion (In) and the L level is input to a second signal input portion (Inb), and the H level appears from the signal output portion (Out) when the L level is input to the first signal input portion (In) and the H level is input to the second signal input portion (Inb).
- attenuation in the voltage amplitude caused by the TFT threshold value is compensated by using a boot strap method, and an output with a normal amplitude can be obtained.
- boot strap operations, and load charge and discharge operations are each performed by independent TFTs, and therefore high speed operation is possible, and a sufficient load driving capability can be achieved.
- FIG. 1C is a diagram showing signal waveforms of respective portions related to operation of an inverter to which the present invention is applied. The operation is explained using FIGS. 1B and 1C . Note that the amplitude of the input signal is from VDD to VSS.
- the H level is input to the first signal input portion (In), and TFTs 153 and 157 are placed in an on state.
- VDD is always input to a gate electrode of a TFT 151 , and gate electrodes of TFTs 152 and 156 become the L level through the TFT 151 to be turn off when the L level is input to the second signal input portion (Inb).
- the L level therefore appears in the signal output portion (Out).
- the signal input to the first signal input portion (In) then begins to become the L level from the H level.
- the TFT turns off when the electric potential falls below the threshold value of the TFT 153 .
- An output terminal of the TFT 153 is therefore momentarily in a floating state.
- the electric potential of the signal input to the first signal input portion (In) drops, that is, the electric potential of a gate electrode of the TFT 153 drops.
- the electric potential of the output terminal of the TFT 153 in a floating state then drops by an amount denoted by ⁇ V f ′ due to capacitive coupling by a capacitor 155 between the gate electrode and the output terminal of the TFT 153 , as shown in FIG. 1C .
- the signal input to the second signal input portion (Inb) becomes the H level from the L level.
- the electric potential of the gate electrodes of the TFTs 152 and 156 therefore rises to be placed in a floating state when the electric potential becomes (VDD ⁇ VthN).
- the electric potential of an output terminal of the TFT 152 is (VSS ⁇ V f ) here, and the voltage between a gate and a source of the TFT 152 becomes larger than the voltage between the gate and the source of the TFT 1302 in the circuit shown in FIG. 13A . That is, more electric current flows in the TFT 152 than in the TFT 1302 .
- the increase in the electric potential of the output terminal of the TFT 152 therefore becomes faster than the increase in the electric potential of the output terminal of the TFT 1302 . Due to the boot strap, the speed, at which the electric potentials of the gate electrodes of the TFTs 152 and 156 lift up, also becomes faster than the speed at which the electric potential of the gate electrode of the TFT 1302 does.
- the H level therefore appears at the signal output portion (Out), and the time for the increase in the electric potential becomes shorter than that of the circuit shown in FIG. 13A .
- the amount of electric current flowing in the TFTs 152 and 156 increases, and therefore the electric potential of the gate electrode of the TFT 152 can also increase to a higher value than (VDD+VthN) due to normal boot strap operations if the load attached to the output stage is large.
- the electric potential of the gate electrode of the TFT 1302 in a floating state cannot be brought up to an electric potential that is higher than (VDD+VthN), as shown in the dotted line waveform in FIG. 1B , and therefore the amplitude of the output signal is also attenuated.
- FIGS. 2A and 2E transitional operations at the instant of changing the signal input to the first signal input portion (In) from the H level to the L level are explained in detail.
- FIG. 2A is similar to the circuit shown in FIG. 1B . It is noted that attention is paid to only the capacitor 154 and the capacitor 155 , and changes in the electric potential at the nodes of both ends of the capacitors here.
- FIG. 2B is a diagram showing an extraction of the capacitors 154 and 155 .
- a node which is corresponding to the gate electrode of the TFT 152 is denoted by V 152 G
- a node which is corresponding to the output terminal of the TFT 152 is denoted by V 152 S
- a node which is corresponding to a gate electrode of the TFT 153 is denoted by V 153 G.
- FIG. 2C shows a state in which the H level is input to the first signal input portion (In), and the L level is input to the second signal input portion (Inb).
- the electric potential of the node V 152 G at this point is VSS
- the electric potential of the node V 152 S is VSS
- the electric potential of the node V 153 G is VDD.
- the signal input to the first signal input portion (In) then becomes the L level from the H level.
- the electric potential of the gate electrode of the TFT 153 therefore drops, and the TFT 153 turns off when the electric potential falls lower than the threshold value.
- the node V 152 S is then placed in a floating state.
- the electric potential of the node V 153 G also drops after falling below the threshold value of the TFT 153 , and the electric potential becomes VSS.
- the electric potential of the node V 152 S drops by ⁇ Vf due to capacitive coupling by the capacitor 155 with the node 153 G.
- the electric potential of the node V 153 G therefore becomes (VSS ⁇ Vf′), as shown in FIG. 2D .
- the signal input to the second signal input portion (Inb) becomes the H level from the L level.
- the TFT 152 thus turns on, and the node V 152 G is placed in a floating state when the electric potential of the node V 152 G becomes (VDD ⁇ VthN).
- the electric potential of the node V 152 G becomes (VDD ⁇ VthN+ ⁇ Vf).
- the electric potential of the node V 152 S therefore increases to VDD.
- the electric potential of the gate electrode of the TFT 156 also becomes equal to the electric potential of the node V 152 G, and therefore the H level increased normally to VDD appears in the signal output portion (Out).
- the role of placing the gate electrode of the TFT 102 in a floating state is accomplished by only the TFT 101 .
- the gate electrode of the TFT 102 is placed in a floating state when the electric potential of the gate electrode of the TFT 102 becomes (VDD ⁇ VthN). If the H level of the input signal is not satisfy (VDD ⁇ VthN), the TFT 101 does not turn off, and therefore the gate electrode of the TFT 102 is not placed in a floating state, and accordingly the boot strap does not work.
- the circuit shown in FIG. 9A is used in the above case.
- a difference between the circuits shown in FIG. 9A and in FIG. 1A is that two TFTs, a TFT 901 and a TFT 902 , are used in order to place a gate electrode of a TFT 903 in a floating state.
- the above stated condition is considered with the circuit of FIG. 9A .
- the TFT 902 When the H level is input to the first signal input portion (In) and the L level is input to the second signal input portion (Inb), the TFT 902 , a TFT 904 , and a TFT 908 turn on. In addition, the TFT 901 turns off, and therefore the L level is input to a gate electrode of the TFT 903 and a gate electrode of a TFT 907 and the TFTs 903 and 907 turn off. The L level thus appears in the signal output portion (Out).
- the TFT 902 , the TFT 904 , and the TFT 908 turns off. Further, the TFT 901 turns on, and the electric potentials of the gate electrodes of the TFTs 903 and 907 increase.
- the electric potential of the gate electrode of the TFT 901 at this point is VDD 0 , and therefore a floating state arises with certainty when the electric potential of the gate electrodes of the TFTs 903 and 907 becomes (VDD 0 ⁇ VthN).
- the H level then appears normally in the signal output portion (Out) due to the boot strap, as shown in the Embodiment Mode.
- the output with an amplitude of (VDD ⁇ VSS) can be obtained for input of signals with an amplitude of (VDD 0 ⁇ VSS) if the circuit shown in FIG. 9A is used. That is, the circuit can be made to function as a level shifter.
- FIG. 9B is a similar circuit.
- a gate electrode of a TFT 911 is connected to an electric power source VDD, and signals are input only to a gate electrode of a TFT 912 . It is thus possible to obtain similar operation to the circuit shown in FIG. 9A with a single input type circuit.
- This embodiment gives a description on a method of manufacturing TFTs for driving circuit provided in a pixel portion and in the periphery of the pixel potion formed on the same substrate. Note that the processes of manufacturing a liquid crystal device is described as an example here, as mentioned above, there is not particular limitation on the liquid crystal display device.
- a base film 5002 is formed from an insulating film such as a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on a glass substrate 5001 .
- the substrate 5001 is formed of barium borosilicate glass typical example of which is Corning #7059 glass or Corning #1737 glass (product of Corning Incorporated), or of aluminoborosilicate glass.
- the base film 5002 is, for example, (now shown) a laminate of a silicon oxynitride film that is formed from SiH 4 , NH 3 , and N 2 O by plasma CVD to a thickness of 10 to 200 nm (preferably 50 to 100 nm) and a silicon oxynitride hydride film formed from SiH 4 and N 2 O by plasma CVD to a thickness of 50 to 200 nm (preferably 100 to 150 nm).
- a semiconductor film having an amorphous structure is crystallized by laser crystallization or a known thermal crystallization method to form a crystalline semiconductor film.
- the crystalline semiconductor film makes island-like semiconductor layers 5003 to 5005 .
- the island-like semiconductor layers 5003 to 5005 each have a thickness of 25 to 80 nm (preferably 30 to 60 nm). No limitation is put on the choice of material of the crystalline semiconductor film but it is preferable to use silicon or a silicon germanium (SiGe) alloy.
- a pulse oscillation-type or continuous wave excimer laser, YAG laser, or YVO 4 laser is used.
- Laser light emitted from a laser as those given in the above is desirably collected into a linear beam by an optical system before irradiating the semiconductor film.
- Conditions of crystallization are set suitably by an operator. However, if an excimer laser is used, the pulse oscillation frequency is set to 30 Hz and the laser energy density is set to 100 to 400 mJ/cm 2 (typically 200 to 300 mJ/cm 2 ).
- a YAG laser is used, second harmonic thereof is employed and the pulse oscillation frequency is set to 1 to 10 kHz while setting the laser energy density to 300 to 600 mJ/cm 2 (typically 350 to 500 mJ/cm 2 ).
- the laser light is collected into a linear beam having a width of 100 to 1000 ⁇ m, for example, 400 ⁇ m, to irradiate the entire substrate.
- the substrate is irradiated with the linear laser light with the beam overlapping each other at an overlap ratio of 80 to 98%.
- a gate insulating film 5006 is formed so as to cover the island-like semiconductor layers 5003 to 5005 .
- the gate insulating film 5006 is formed from an insulating film containing silicon by plasma CVD or sputtering to a thickness of 40 to 150 nm.
- a silicon oxynitride film having a thickness of 120 nm is used.
- the gate insulating film is not limited to a silicon oxynitride film but may be a single layer or a laminate of other insulating films containing silicon.
- the film is formed by plasma CVD in which TEOS (tetraethyl orthosilicate) is mixed with O 2 and the reaction pressure is set to 40 Pa, the substrate temperature to 300 to 400° C., the frequency is set high to 13.56 MH z , and the power density is set to 0.5 to 0.8 W/cm 2 for electric discharge.
- TEOS tetraethyl orthosilicate
- the silicon oxide film thus formed can provide the gate insulating film with excellent characteristics when it is subjected to subsequent thermal annealing at 400 to 500° C.
- the first conductive film 5007 is a Ta film with a thickness of 50 to 100 nm and the second conductive film 5009 is a W film with a thickness of 100 to 300 nm ( FIG. 7A ).
- the Ta film is formed by sputtering in which Ta as a target is sputtered with Ar. In this case, an appropriate amount of Xe or Kr is added to Ar to ease the internal stress of the Ta film and thus prevent the Ta film from peeling off.
- the resistivity of a Ta film in ⁇ phase is about 20 ⁇ cm and is usable for a gate electrode. On the other hand, the resistivity of a Ta film in ⁇ phase is about 180 ⁇ cm and is not suitable for a gate electrode.
- a Ta film in ⁇ phase can readily be obtained when a base with a thickness of about 10 to 50 nm is formed from tantalum nitride (TaN) that has a crystal structure approximate to that of the ⁇ phase Ta film.
- the W film is formed by sputtering with W as a target.
- the W film may be formed by thermal CVD using tungsten hexafluoride (WF 6 ).
- WF 6 tungsten hexafluoride
- the W film has to have a low resistivity in order to use the W film as a gate electrode.
- a desirable resistivity of the W film is 20 ⁇ cm or lower.
- the resistivity of the W film can be reduced by increasing the crystal grain size, but if there are too many impurity elements such as oxygen in the W film, crystallization is inhibited to raise the resistivity.
- the W film when the W film is formed by sputtering a W target with a purity of 99.9999% is used and a great care is taken not to allow impurities in the air to mix in the W film being formed. As a result, the W film can have a resistivity of 9 to 20 ⁇ cm.
- the first conductive film 5007 is a Ta film and the second conductive film 5008 is a W film in this embodiment, there is no particular limitation.
- the conductive films may be formed of any element selected from a group consisting of Ta, W, Mo, Al, and Cu, or of an alloy material or compound material mainly containing the elements listed above.
- a semiconductor film typically a polycrystalline silicon film doped with an impurity element such as phosphorus, may be used instead.
- a resist mask 5009 is formed to carry out first etching treatment for forming electrodes and wiring lines.
- ICP inductively coupled plasma
- etching is employed in which CF 4 and Cl 2 are mixed as etching gas and an RF (13.56 MH z ) power of 500 W is given to a coiled electrode at a pressure of 1 Pa to generate plasma.
- the substrate side also receives an RF (13.56 MH z ) power of 100 W so that a substantially negative self-bias voltage is applied.
- the W film and the Ta film are etched to the same degree.
- the first conductive films and the second conductive film are tapered around the edges by the effect of the bias voltage applied to the substrate side.
- the angle of the tapered portions is 15° to 45°.
- the etching time is prolonged by about 10 to 20%.
- the selective radio of the W film to the silicon oxynitride film is 2 to 4 (typically 3), and therefore a region where the silicon oxynitride film is exposed is etched by about 20 to 50 nm by the over-etching treatment.
- first shape conductive layers 5010 to 5013 comprising first conductive layers 5010 a to 5013 a and second conductive layers 5010 b to 5013 b are formed from the first conductive film and the second conductive film through the first etching treatment.
- regions of the gate insulating film 5006 that are not covered with the first shape conductive layers 5010 to 5013 are etched an thinned by about 20 to 50 nm. ( FIG. 7B )
- First doping treatment is conducted next for doping of an impurity element that gives the N-type conductivity ( FIG. 7B ).
- Ion doping or ion implanting is employed.
- the dose is set to 1 ⁇ 10 13 to 5 ⁇ 10 14 atoms/cm 2 and the acceleration voltage is set to 60 to 100 keV.
- the impurity element that gives the N-type conductivity is an element belonging to Group 15 , typically, phosphorus (P) or arsenic (As).
- phosphorus (P) is used.
- the conductive layers 5010 to 5013 serve as masks against the impurity element that gives the n-type conductivity, and first impurity regions 5014 to 5016 are formed in a self-aligning manner.
- the first impurity regions 5014 to 5016 each contain the impurity element that gives the N-type conductivity in a concentration of 1 ⁇ 10 20 to 1 ⁇ 10 21 atoms/cm 3 .
- a second etching process is performed.
- the ICP etching method is similarly used in which CF 4 , Cl 2 , and O 2 are mixed as the etching gases, and an RF power of 500 W is applied to a coil type electrode under a pressure of 1 Pa to generate plasma.
- An RF power of 50 W is applied to the side of the substrate (sample stage), and a low self bias voltage as compared with the first etching process is applied thereto.
- the W film as the second conductive layer is anisotropically etched
- the Ta film as the first conductive layer is anisotropically etched at an etching rate lower than the W film to form second shape conductive layers 5017 to 5020 (first conductive layers 5017 a to 5020 a and second conductive layers 5017 b to 5020 b).
- Reference number 5006 designates a gate insulating film, and regions which are not covered with the second shape conductive layers 5017 to 5020 are etched into a film thickness of about 20 to 50 nm, to for thin regions.
- the reaction of the W film and the Ta film to etching by the mixture gas of CF 4 and Cl 2 can be deduced from the vapor pressure of radical or ion species generated and of reaction products.
- WF 6 that is a fluoride of W has an extremely high vapor pressure while the others, namely, WCl 5 , TaF 5 , and TaCl 5 have a vapor pressure about the same degree. Accordingly, the W film and the Ta film are both etched with the mixture gas of CF 4 and Cl 2 .
- the film is doped with an impurity element that gives the N-type conductivity in a dose smaller than in the first doping treatment and at a high acceleration voltage.
- the acceleration voltage is set to 70 to 120 KeV and the dose is set to 1 ⁇ 10 13 atoms/cm 2 to form new impurity regions inside the first impurity regions that are formed in the island-like semiconductor layers in FIG. 7B .
- the second conductive layers 5017 b to 5020 b are used as masks against the impurity element, regions under the first conductive layers 5017 a to 5020 a are also doped with the impurity element.
- second impurity regions 5021 to 5023 overlapping the first conductive layer.
- a third etching process is performed.
- an ICP etching device is employed and Cl 2 is used as etching gas.
- Etching is conducted for 70 seconds, setting the flow rate of Cl 2 to 60 (sccm), and an RF power of 350 W is applied to a coil type electrode under a pressure of 1 Pa to generate plasma.
- An RF power is also applied to the side of the substrate (sample stage) so that a substantially negative self-bias voltage is applied.
- the first conductive layer is etched to reduce the region, thereby third shape conductive layers 5024 to 5027 (first conductive layers 5024 a to 5027 a and second conductive layers 5024 b to 5027 b) are formed.
- a portion of the second impurity regions 5021 to 5023 include the third impurity regions 5028 to 5030 that are not covered with the first conductive layer.
- the third shape conductive layers 5024 to 5027 overlapping the island-like semiconductor layers function as gate electrodes of TFTs.
- the impurity elements used to dope the island-like semiconductor layers in order to control the conductivity types are activated.
- the activation step is carried out by thermal annealing using an annealing furnace.
- Other activation adoptable methods include laser annealing and rapid thermal annealing (RTA).
- the thermal annealing is conducted in a nitrogen atmosphere with an oxygen concentration of 1 ppm or less, preferably 0.1 ppm or less, at 400 to 700° C., typically 500 to 600° C.
- the substrate is subjected to heat treatment at 500° C. for four hours.
- the activation is desirably made after an interlayer insulating film (mainly containing silicon) is formed in order to protect the wiring lines and others.
- Another heat treatment is conducted in an atmosphere containing 3 to 100% hydrogen at 300 to 450° C. for one to twelve hours, thereby hydrogenating the island-like semiconductor layers.
- the hydrogenation steps are to terminate dangling bonds in the semiconductor layers using thermally excited hydrogen.
- plasma hydrogenation using hydrogen that is excited by plasma may be employed.
- a first interlayer insulating film 5031 is formed next from a silicon oxynitride film with a thickness of 100 to 200 nm.
- a second interlayer insulating film 5032 is formed thereon from an organic insulating material. Thereafter, contact holes are formed corresponding to the first interlayer insulating film 5031 , the second interlayer insulating film 5032 , and the gate insulating film 5006 .
- a film made of wiring lines material is formed, whereby connection -wiring lines 5033 to 5036 and a pixel electrode 5037 are formed by patterning.
- the second interlayer insulating film 5032 is a film made of an organic resin.
- the usable organic resin includes polyimide, polyamide, acrylic resin, and BCB (benzocyclobutene). Since planarization is a significant aspect of the role of the second interlayer insulating film 5032 , acrylic resin that can level the surface well is particularly preferable. In this embodiment, the acrylic film is thick enough to eliminate the level differences caused by the TFTs. An appropriate thickness of the film is 1 to 5 ⁇ m (preferably 2 to 4 ⁇ m).
- the contact holes are formed by dry etching or wet etching, and include contact holes reaching the impurity regions 5014 to 5016 having the N-type conductivity, the source signal lines, the gate signal lines (now shown), power supply lines (not shown), and gate electrodes 5024 to 5026 (not shown) respectively.
- a lamination film of a three layer structure in which a 100 nm thick Ti film, a 300 nm thick Al film containing Ti, and a 150 nm thick Ti film are formed in succession by sputtering wirings 5033 to 5036 .
- other conductive films may be used.
- the pixel electrode 5037 in a case of that the display device is a reflect type, is formed by a material in high reflectivity.
- the pixel electrode 5037 is formed by using a material like Indium Tin Oxide (ITO) or the like that has transparent conductivity.
- ITO Indium Tin Oxide
- An opposing substrate 5038 is prepared next.
- a light shielding film is formed on the opposing substrate 5038 .
- the light shielding film is formed of a material such as chrome (Cr) into a thickness of 100 to 200 nm.
- an opposing electrode 5040 is formed in the pixel portion.
- the opposing electrode is formed by using a transparent conductive material such as ITO. Further, it is preferable that the film thickness of the opposing electrode be from 100 to 120 nm in order to maintain a high transmittivity of visible light.
- Orientation films 5041 and 5042 are formed in the active matrix substrate and the opposing substrate. It is preferable that the film thickness of the orientation films 5041 and 5042 be from 30 to 80 nm. Furthermore, materials such as SE7992, for example, manufactured by Nissan Chemical Industries, Ltd., can be used for the orientation films. If an orientation film having a high pre-tilt angle is used, then the generation of disclination can be controlled at the same time as driving the liquid crystal display device by an active matrix method.
- the orientation films 5041 and 5042 undergo a rubbing process next. It is preferable that the rubbing direction show a counterclockwise TN (twisted nematic) orientation when the liquid crystal display device is complete.
- Embodiment 2 Although now shown in particular in the figures for Embodiment 2, it is also possible to increase the uniformity of a cell gap by distributing spacers within the pixels or by patterning.
- a photosensitive resin film is formed and patterned in Embodiment 2, thus fanning spacers having a height of 4.0 ⁇ m.
- the active matrix substrate and the opposing substrate are then bonded by using a sealant 5043 .
- the thermosetting sealant XN-21S manufactured by Mitsui Chemicals is used as the sealant.
- a filler is mixed into the sealant. Note that the height of the filler is set to 4.0 ⁇ m. After the sealant is hardened, the active matrix substrate and the opposing substrate are sectioned simultaneously into predetermined sizes.
- Liquid crystals 5044 are injected next. Considering high speed response characteristics and the like, it is preferable to use a low viscosity liquid crystal material for the liquid crystals.
- a nematic liquid crystal material having an easily controlled orientation is used in Embodiment 2.
- High response speed ferroelectric liquid crystals and anti-ferroelectric liquid crystals may of course also be used.
- the number of photomasks necessary for manufacturing the active matrix substrate can be kept to four (island shape semiconductor layer patter, first wiring pattern (gate wirings, island shape source wirings, capacitor wirings), contact hole pattern, and second wiring pattern (including pixel electrodes and connection electrodes)) in accordance with the processes disclosed in Embodiment 2.
- processing can be shortened, and this contributes to a reduction in manufacturing costs and to an increase in yield.
- Embodiment 3 An example of manufacturing a display device which has the circuit as shown in the Embodiment Mode and Embodiment 1 is discussed in Embodiment 3.
- FIG. 10A A schematic diagram of the display device is shown in FIG. 10A .
- a pixel portion 1001 is placed in a center portion of a substrate 1000 .
- a source signal line driver circuit 1002 for controlling source signal lines, and gate signal line driver circuits 1007 for controlling gate signal lines are formed in the periphery of the pixel portion 1001 .
- the gate signal line driver circuits 1007 are placed symmetrically on both side of the pixel portion 1001 , there may be a gate signal driver circuit on only one side thereof.
- Signals input from the outside for driving the source signal line driver circuit 1002 and the gate signal line driver circuits 1007 are input through an FPC 1010 .
- the signals input from the FPC 1010 have small voltage amplitudes, and therefore undergo transformation of the voltage amplitudes by level shifters 1006 , and then, are input to the source signal line driver circuit 1002 and the gate signal line driver circuits 1007 in Embodiment 3.
- FIG. 10B illustrates a cross section taken along line A-A′ of FIG. 10A .
- the pixel portion 1001 , the source signal line driver circuit 1002 , the gate signal drive circuit (now shown) are formed on the substrate 1000 .
- the substrate 1000 and a counter substrate 1011 are attached each other by a sealant 1002 , liquid crystals are injected in the gap between the substrates. As shown in FIG. 10A , the injection entrance is sealed by a sealant 1013 thereafter.
- a lead-out wiring 1021 is electrically connected to an FPC side wiring 1022 of an FPC 1010 through an anisotropic conductive film 1023 . Further, as shown in FIG. 10C , the anisotropic conductive film 1023 has conductive filter 1024 .
- the lead-out wiring 1021 on the substrate 1000 and the FPC side wiring 1022 on the FPC 1010 are electrically connected to each other through the conductive filler 1024 by heat-pressing the substrata 1000 and the FPC 1010 .
- FIG. 3 is a diagram showing the structure of the source signal line driver circuit.
- the source signal line driver circuit has level shifters 301 , 302 , shift registers 303 , buffers 304 , sampling circuits 305 .
- a source side clock signal (S-CK), a source side clock inverted signal (S-CKb), a source side start pulse (S-SP), analog image signals (Video 1 - 8 ) are input to the source signal line driver circuit.
- the clock signal and the start pulse are input after undergoing amplitude transformation by the level shifters 301 and 302 .
- the analog image signals divided into 8 divisions are input in Embodiment 3, substantially there is no limitation when the display device is manufactured.
- FIG. 4 A block denoted by reference numeral 400 in a block diagram of FIG. 4A is a pulse output circuit for outputting one stage portion of sampling pulses.
- Shift registers of FIG. 4A are structured by n stages (where n is a natural number, 1 ⁇ n) of pulse output circuits.
- FIG. 4B is a diagram showing the structure of the pulse output circuit in detail.
- the pulse output circuit body is composed of TFTs 401 to 406 , and a capacitor 407 .
- output pulses from the (K ⁇ 1)-th stage pulse output circuit are input to gate electrodes of the TFTs 401 and 404
- output pulses from the (k+1)-th stage pulse output circuit are input to gate electrodes of the TFTs 402 and 403 , respectively.
- the electric potential of a gate electrode of the TFT 405 is pulled up to the VDD side ( FIG. 14 , reference numeral 1402 ), and the TFT 401 turns off to the gate electrode of the TFT 405 placed in a floating state when the electric potential becomes VDD ⁇ VthN.
- the voltage between a gate and a source of the TFT 405 is greater than the threshold value at this point, and the TFT 405 turns on.
- pulses are not input to the gate electrodes of the TFTs 402 and 403 to remain at L level and the TFTs 402 and 403 are therefore in an off state.
- the electric potential of a gate electrode of the TFT 406 is therefore L level to be turned off.
- the electric potential of an output terminal (SR out) of the pulse output circuit is thus pulled up to the VDD side in accordance with the clock signal becoming H level (S-CK or S-CKb) input to an input electrode of the TFT 405 ( FIG. 14 , reference numeral 1403 ).
- the capacitor 407 is formed between the gate electrode and the output electrode of the TFT 405 here, and in addition, the gate electrode of the TFT 405 is in a floating state.
- the electric potential of the gate electrode of the TFT 405 is therefore further pulled up from (VDD ⁇ VthN) by the capacitor 407 in accordance with the rise in the electric potential of the output terminal (SR out) of the pulse output circuit, namely the rise in the electric potential of the output electrode of the TFT 405 .
- the final electric potential of the gate electrode of the TFT 405 becomes higher than (VDD+VthN) ( FIG. 14 , reference number 1402 ).
- the electric potential of the output terminal (SR out) of the pulse output circuit is not influenced by the threshold value of the TFT 405 , and increases normally to VDD ( FIG. 14 , reference numeral 1403 ).
- a pulse is output from the (k+1)-th stage pulse output circuit ( FIG. 14 , reference numeral 1404 ).
- the output pulse of the (k+1)-th stage is returned to the k-th stage and is input to the gate electrodes of the TFTs 402 and 403 .
- the electric potentials of the gate electrodes of the TFTs 402 and 403 become H level, and the TFTs 402 and 403 turn on.
- the electric potential of the gate electrode of the TFT 405 is pulled down to the VSS side, and the TFT 405 turns off. Simultaneously, the electric potential of the gate electrode of the TFT 406 becomes H level, and the TFT 406 turns on.
- the electric potential of the output terminal (SR out) of the k-stage pulse output circuit becomes L level.
- Pulses with amplitude between VDD ⁇ VSS are then output one after another by similar operations up through the final stage. Circuit operation is also similar for reverse direction scanning.
- the shift register is therefore structured by pulse output circuits with two more stages than the necessary number of stages. The pulse output circuits at both ends are handled as dummy stages.
- FIG. 5 shows the structure of the buffers 304 . As shown in FIG. 5A , this is a structure having four stages. Only the first stage is a single input, single output type (Buf Unit 1 ) 501 . The second and subsequent stages are two input, two output types (Buf Unit 2 ) 502 .
- the circuit structure of the initial stage unit (Buf Unit 1 ) is shown in FIG. 5B .
- Signals are input to gate electrodes of TFTs 552 , 554 and 556 .
- a gate electrode of a TFT 551 is connected to an input electrode.
- H level is input to the gate electrodes of the TFTs 552 , 554 and 556 to become in an on state, then the electric potential of gate electrodes of TFTs 553 and 555 become L level, and as a result, an output terminal (out) becomes L level.
- L level is input to the gate electrodes of the TFTs 552 , 554 and 556 , the TFTs 552 , 554 and 556 turn off.
- the gate electrode and an input electrode of the TFT 551 are connected and the TFT 551 is normally on, the electric potential of the gate electrodes of the TFT 553 and 555 increase. Similarly to the case of the above-stated shift register, there is capacitive coupling due to a capacitor 557 , and the output therefore becomes H level.
- the capacitor 558 is used to reduce the electric potential of the output electrode of the TFT 553 once, as described in the Embodiment Mode.
- the relationship between the TFT 551 and the TFT 552 is as follows: the gate electrode and the input electrode of the TFT 551 are connected, and therefore both the TFT 551 and the TFT 552 are in an on state when the TFT 552 turns on. It is necessary for the electric potential of the gate electrodes of the TFT 553 and 555 to become L level in this state, and therefore it is necessary to design the channel width of the TFT 551 to be smaller than that of the TFT 552 . It is sufficient to have the capability for changing the gate electrodes of the TFT 553 and 555 , and therefore the channel width of the TFT 551 may be set to a minimum value.
- FIG. 5C shows the structure of the unit (Bud Unit 2 ) used in the second and later stages.
- Input to the gate electrode of the TFT 562 is similar to that of the initial stage, and in addition, the previous stage input is used as an inverted input to the gate electrode of the TFT 561 .
- the TFTs 561 and 562 are thus exclusively on and off, respectively, and the penetration path among power supply VDD, the TFT 561 , the TFT 562 , and power supply VSS can be eliminated in the structure of FIG. 5B .
- FIG. 6 shows structures of a clock signal level shifter (CKLS) and a start pulse level shifter (SPLS) used in the display device of Embodiment 3.
- the basic structure has four stages, a level shifter for an initial stage, and buffers for the second and the following stages, which are similar to the aforementioned buffer circuits.
- a signal with the amplitude of VDD LO ⁇ VSS is input, and an output signal with amplitude of VDD ⁇ VSS is obtained (where
- the initial stage is one input, one output type, while the second and the subsequent stages are two input, one output types.
- the mutual inputs are also used as inverted inputs.
- the start pulse level shifter has a similar structure to that of the aforementioned buffer.
- FIG. 6C The circuit structure of the unit used for the initial stage of the level shifter is shown in FIG. 6C , while the circuit structure the unit used for the second and the subsequent stages is shown in FIG. 6D .
- the circuit structure and operation are similar to those shown in FIGS. 5B and 5C , respectively. The only difference is that the amplitude of the signal input to the initial stage is VDD LO ⁇ VSS.
- the TFT 652 , 654 , 656 turn on when the H level signal is input from an input terminal (IN) (in the case in which the absolute value
- the electric potential of gate electrodes of TFTs 653 and 654 is pulled down to the VSS side, and therefore L level appears at an output terminal (out).
- This level shifter with the above structure has a characteristic that the input signal is not directly input to the gate electrode for controlling the TFT 651 connected to the high electric potential side (VDD side). Consequently, the electric potential of the gate electrodes of the TFTs 653 and 655 can be pulled up, no matter what the threshold value of the TFT 651 is, even if the amplitude of the input signal is small. A high amplitude transformation gain is therefore obtained.
- FIG. 15 is a diagram showing the circuit structure of a gate signal line driver circuit.
- the gate signal line driver circuit has a level shifter 1501 used for start pulse, a level shifter 1502 used for a clock signal, a shift register 1503 and a buffer 1504 .
- a gate side clock signal (G-CK), a gate side clock inverted signal (G-CKb), and a gate side start pulse (G-SP) are input to the gate signal line driver circuit.
- the input signals are input after undergoing amplitude transformation by level shifters 1501 and 1502 .
- shift register 1503 the buffer 1504 , the start pulse level shifter 1501 , and the clock signal level shifter 1502 are similar to those used in the source signal line driver circuit, and therefore an explanation of their structure and operation is omitted here.
- the display device manufactured by using the driver circuit introduced here and pixels shown in Embodiment 2 is structured by only single polarity TFTs, and therefore a portion of a doping process during manufacturing can be eliminated. In addition, it becomes possible to reduce the number of photomasks. It is also possible to resolve the problem of an increase in current consumption due to an expanded signal amplitude by using circuits that apply the bootstrap method, as discussed above.
- Embodiment 2 Although an example of a case in which the pixels and the driver circuits in the periphery are structured by using n-channel TFTs is explained in Embodiment 2, it is also possible to implement the present invention by using p-channel TFTs.
- impurity regions referred to a overlap regions are formed to overlap gate electrodes in order to control hot carrier degradation and the like.
- there is little influence due to hot carrier degradation in the case of p-channel TFTs and therefore it is not particularly necessary to form overlap regions. It is therefore possible to perform manufacturing by simpler process steps.
- a base film 6002 is formed on an insulating substrate 6001 1 such as glass, island-shaped semiconductor layers 6003 to 6005 , a gate insulating film 6006 , and conductive layers 6007 and 6008 are then formed as shown in FIG. 16A in accordance with Embodiment 2.
- insulating substrate 6001 1 such as glass
- island-shaped semiconductor layers 6003 to 6005 a gate insulating film 6006
- conductive layers 6007 and 6008 are then formed as shown in FIG. 16A in accordance with Embodiment 2.
- the conductive layers 6007 and 6008 are shown here as a laminate structure, a single layer structure may also be used without any particular problems.
- a mask 6009 is formed from resist, and a first etching process is performed.
- Anisotropic etching is performed in Embodiment 2 by utilizing selectivity due to the materials of the conductive layers with the laminate structure. However, it is not particularly necessary to form regions that become overlap regions here, and therefore normal etching may be performed.
- a region that becomes thinner by an amount on the order of 20 to 50 nm due to etching at this point is formed in the gate insulating film 6006 .
- a first doping process for adding an impurity element that imparts p-type conductivity to the island shape semiconductor layers is performed next.
- Conductive layers 6010 to 6013 are used as masks against the impurity element, and the impurity regions 6014 to 6016 are formed in a self-aligning manner.
- Boron (B) and the like are typically used as the impurity element that imparts p-type conductivity.
- the impurity regions 6014 to 6016 are formed by an ion doping using diborane (B 2 H 6 ) here, and the impurity concentration within the semiconductor layers is set from 2 ⁇ 10 20 to 2 ⁇ 10 21 atoms/cm 3 .
- the resist mask is then removed, and the state of FIG. 16C is obtained. Manufacturing then continues in accordance with the steps from FIG. 8B onward in Embodiment 2.
- electric potential applied to a gate electrode of a TFT 1801 is VDD LO ( ⁇ VDD), and the amplitude of an input signal is from VDD LO to VSS.
- the electric potential of the gate electrode of the TFTs 1803 and 1807 becomes the L level to turn the TFTs 1803 and 1807 off when the L level is input to the first signal input portion (In).
- the signal input to the second signal input portion (Inb) switches from the L level to the H level.
- the electric potential of the gate electrodes of the TFTs 1802 and 1806 therefore rises, and reaches (VDD LO ⁇ VthN) to be placed in a floating state.
- the voltage between a gate and a source of the TFT 1802 and the voltage between a gate and a source of the TFT 1806 at this point become large than VthN to turn the TFTs 1802 and 1806 on.
- the electric potential of output terminals of the TFTs 1802 and 1806 therefore rises.
- the electric potential of the gate electrode of the TFT 1806 therefore also rises to (VDD LO ⁇ VthN+ ⁇ Vf) at the same time, and the H level at the signal output portion (Out) rises normally to VDD.
- the circuit shown in FIG. 18A obtains output with an amplitude from VDD to VSS for input of a signal with an amplitude between VDD LO and VSS, and therefore can be used as a level shifter.
- Embodiment 6 A method of manufacturing a light emitting device using light emitting elements such as EL elements in a pixel portion is explained in Embodiment 6.
- films up through a first interlayer insulating film and a second interlayer insulating film are formed as shown in FIGS. 8A and 8B .
- Contact holes are then opened as shown in FIG. 19A .
- the contact holes are formed by using dry etching or wet etching in order to reach n-type impurity regions, source signal lines, gate signal lines, electric current supply lines, and gate electrodes, respectively.
- a transparent conductive film typically ITO
- ITO transparent conductive film
- a laminate film made from Ti, Al containing Ti, and Ti is formed, and patterned into a predetermined shape to form wiring electrodes 7002 to 7005 and a pixel electrode 7006 .
- the film thickness of each of the laminate film may be set similarly to those of Embodiment 2.
- the pixel electrode 7006 is formed so as to overlap with the anode 7001 already formed and exhibit contact.
- An insulating film containing silicon (typically a silicon oxide film) is formed next, an opening portion is formed in a location which is corresponding to the anode 7001 of the EL. element, and a third interlayer insulating film 7007 is formed.
- a sidewall with a tapered shape can easily be formed here by using wet etching in forming the opening portion. Note that EL layer deterioration, cut step, and the like, which are caused by steps, become conspicuous problems in the case in which the sidewalls do not have a sufficiently smooth tapered shape, and it is therefore necessary to exert caution.
- an EL element cathode 7009 is formed from cesium (Cs) with a thickness equal to or less than 2 nm and silver (Ag) with a thickness equal to or less than 10 nm. Light generated in the EL layer is transmitted through the cathode 7009 to be emitted by making the film thickness of the cathode 7009 of the EL element extremely thin.
- a protective film 7010 is formed next in order to protect the EL element. After work for attaching an FPC and the like is then performed, the light emitting device is complete.
- the detailed structure of the EL element is the light emitting device shown in FIG. 19A is shown in FIG. 19B in Embodiment 6.
- the anode 7101 of the EL element is made from a transparent conductive film, typically ITO.
- Reference numeral 7102 denotes an EL layer containing a light emitting layer.
- the cathode of the EL element is made from a Cs film 7103 and an Ag film 7104 each having an extremely thin thickness.
- Reference numeral 7105 denotes a protective film.
- Light generated in an EL layer 7102 is emitted in an upward direction after transmitting through the Cs film 7103 and the Ag film 7104 constituting the cathode by forming the cathode of the EL element with an extremely thin film thickness. That is, the surface area of the light emitting area is not overwhelmed by a region where TFTs are formed, and therefore an aperture ratio of nearly 100% can be achieved.
- Embodiment 7 A manufacturing process of a light emitting device by a method that differs from Embodiment 6 is explained in Embodiment 7.
- films up thorough a first interlayer insulating film and a second interlayer insulating film are formed as shown in FIGS. 8A and 8B .
- Contact holes are then opened as shown in FIG. 20A .
- the contact holes are formed by using dry etching or wet etching in order to reach n-type impurity regions, source signal lines, gate signal lines, electric current supply lines, and gate electrodes, respectively.
- Wirings 7201 to 7204 are then formed, and a pixel electrode 7205 which serves as an anode of an EL element is formed as a laminate film made from Ti, Al containing Ti, Ti, and, a transparent conductive film.
- An insulating film containing silicon (typically a silicon oxide film) is formed next, an opening portion is formed in a location which is corresponding to the anode of the EL element, and a third interlayer insulating film 7206 is formed.
- a sidewall with a tapered shape can easily be formed here by using wet etching in forming the opening portion. Note that EL layer deterioration, cut step, and the like caused by steps become conspicuous problems in the case in which the sidewalls do not have a sufficiently smooth tapered shape, and it is therefore necessary to exert caution.
- an EL element cathode 7208 is formed from cesium (Cs) with a thickness equal to or less than 2 nm, and silver (Ag) with a thickness equal to or less than 10 nm. Light generated in the EL layer is transmitted through the cathode 7208 to be emitted by making the film thickness of the cathode 7208 the EL element extremely thin.
- a protective film 7209 is formed next in order to protect the EL element. After work for attaching an FPC and the like is then performed, the light emitting device is complete.
- the detailed structure of the EL element in the light emitting device shown in FIG. 20A is shown in FIG. 20B .
- the anode of the EL element is made from a metallic film 7301 which is a laminate film of Ti, Al containing Ti, and Ti, and a transparent conductive film 7302 , typically ITO.
- Reference numeral 7303 denotes an EL layer containing a light emitting layer.
- the cathode of the EL element is made from a Cs film 7304 and an Ag film 7305 each having an extremely thin thickness.
- Reference numeral 7306 denotes a protective film.
- the light emitting device manufactured in accordance with Embodiment 7 has an advantage that an aperture ratio of nearly 100% can be achieved, similar to the display device disclosed in Embodiment 6.
- capacitor means formed in order to perform boot strap operations may utilize a capacitance between a gate and a source of a TFT, and the capacitor means may also be formed by a pair of electrodes of two materials selected from a wiring, a gate electrode, an active layer, and the like, and an insulating layer sandwiched between the pair of electrodes.
- FIG. 21 shows a structure in which capacitor means 2154 and 2155 are formed similarly to TFTs.
- a source region and a drain region of a TFT are mutually connected to function as capacitor means in which a gate electrode and a channel forming region below are taken as an electrode pair and a gate insulating film is taken as an insulating film.
- the gate electrode and a wiring material connected to a source region and a drain region may be taken as an electrode pair, and an interlayer insulating film between the gate material and the wiring material may be taken as an insulating film to function as the capacitor means.
- FIG. 22A An example of a mask layout, in the case of manufacturing an actual circuit as the structure shown in FIG. 21 , is shown in FIG. 22A . It is noted that electric power sources, signals input from respective input terminals, signals output from respective output terminals, reference numerals for TFTs, and the like all correspond to the circuit diagram shown in FIG. 21 .
- FIG. 22B is a diagram showing a cross sectional diagram of FIG. 22A cut along a line segment X-X′.
- the source regions and the drain regions of the respective TFTs are connected by a wiring material formed over the TFTs 2154 and 2155 .
- FIG. 22C shows a photograph of an actual circuit manufactured by using the mask layout shown in FIG. 22A . It is noted that reference numerals and other symbols used in the photograph correspond to those in FIG. 21 and FIG. 22A .
- the present invention can be applied to fabrication of a display device used for various electronic devices.
- Such electronic devices include a portable information terminal (electronic notebook, mobile computer, cellular phone, etc.), a video camera, a digital camera, a personal computer, a television, cellular phone, and the like.
- FIG. 17 shows examples of those.
- FIG. 17A shows a liquid crystal display device or an OLED display which is constituted by a housing 3001 , a supporting stand 3002 , a display portion 3003 , and the like.
- the present invention can be applied to the fabrication of the display portion 3003 .
- FIG. 17B shows a video camera which is constituted by a main body 3011 , a display portion 3012 , an audio input portion 3013 , and operation switch 3014 , a battery 3015 , an image receiving portion 3016 , and the like.
- the present invention can be applied to the fabrication of the display portion 3012 .
- FIG. 17C shows a notebook personal computer which is constituted by a main body 3021 , a housing 3022 , a display portion 3023 , a keyboard 3024 , and the like.
- the present invention can be applied to the fabrication of the display portion 3023 .
- FIG. 17D shows a portable information terminal which is constituted by a main body 3031 , a stylus 3032 , a display portion 3033 , an operation button 3034 , an external interface 3035 , and the like.
- the present invention can be applied to the fabrication of the display portion 3033 .
- FIG. 17E shows a sound reproducing system, specifically an on-vehicle audio apparatus, which is constituted by a main body 3041 , a display portion 3042 , operation switches 3043 and 3044 , and the like.
- the present invention can be applied to the fabrication of the display portion 3042 .
- the on-vehicle audio apparatus is illustrated in this example, the invention can also be used for a portable or household audio apparatus.
- FIG. 17F shows a digital camera which is constituted by a main body 3051 , a display portion (A) 3052 , an eyepiece portion 3053 , an operation switch 3054 , a display portion (B) 3055 , a battery 3056 , and the like.
- the present invention can be applied to the fabrication of the display portion (A) 3052 and the display portion (B) 3055 .
- FIG. 17G shows a cellular phone which is constituted by a main body 3061 , an audio output portion 3062 , an audio input portion 3063 , a display portion 3064 , an operation switch 3065 , an antenna 3066 , and the like.
- the present invention can be applied to the fabrication of the display portion 3064 .
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Computing Systems (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Thin Film Transistor (AREA)
- Logic Circuits (AREA)
- Electroluminescent Light Sources (AREA)
- Shift Register Type Memory (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT (152), and a larger load driving capability is obtained.
Description
This application is a Reissue application of U.S. application Ser. No. 11/463,356, filed Aug. 9, 2006, now U.S. Pat. No. 7,362,139, issued Apr. 22, 2008, which is a continuation of U.S. application Ser. No. 10/901,127, filed Jul. 29, 2004, now U.S. Pat. No. 7,091,749, issued Aug. 15, 2006, which is a continuation of U.S. application Ser. No. 10/202,861, filed Jul. 26, 2002, now U.S. Pat. No. 6,788,108, issued Sep. 7, 2004 and claims the benefit of a foreign priority application filed in Japan as Serial No. 2001-229054 on Jul. 30, 2001. This application claims priority to each of these prior applications, and the disclosures of the prior applications are considered part of (and are incorporated by reference in) the disclosure of this application.
1. Field of the Invention
The present invention relates to an inverter, buffer, and level shifter, and to a semiconductor device using them. Note that the term display device used within this specification includes a liquid crystal display device which employ liquid crystal elements in pixels, and a light emitting device which employ light emitting elements such as electroluminescence (EL) elements. The term semiconductor device indicates circuits that perform processing for inputting video signals into pixels disposed in the display device and displaying images. Pulse output circuits such as shift register, inverters, buffers, and level shifters, and amplification circuits such as amplifiers are included in the category of semiconductor devices.
2. Description of the Related Art
In recent years, display devices manufactured by forming semiconductor thin films on an insulator such as a glass substrate, in particular, active matrix display devices such as LCDs (liquid crystal displays) using thin film transistors (hereinafter referred to as TFTs), are being utilized in many manufactured products, and are spreading. The active matrix display devices using TFTs have from several hundred thousands to several million pixels arranged in a matrix shape, and display of images is performed by controlling the electric charge of each pixel with TFTs disposed in the respective pixels.
In addition, techniques related to polysilicon TFTs for TFTs have been developed recently, and a driver circuit using TFTs is formed in a peripheral region of a pixel portion on a substrate simultaneously with pixel TFTs structuring pixels. The techniques contribute greatly to making a device small size and to reducing electric power Consumption, and accordingly, a display device has come to be indispensable for a portion such as a display portion of a mobile information terminal, which has remarkably been applied to the extensive fields in recent years.
In general, a CMOS circuit in which an n-channel TFT and a p-channel TFT are combined are used as a circuit for structuring semiconductor devices. A CMOS inverter is shown in FIG. 11A as one example of the CMOS circuit. A p-channel TFT 1101 and an n-channel TFT 1102 are combined, and an output signal is obtained by inverting the polarity of an input signal (see FIG. 11B ).
Now, as shown in FIG. 11C , there is a state in which a certain load (Load) is attached to the later state of the CMOS inverter. If the load is excessive with respect to the size of the TFTs structuring the CMOS inverter at this point and a pulse is input from an input (In), there will be a case in which an output pulse, namely an output (Out i) of an inverter (Inv1) in FIG. 11C , is greatly dulled in both rise and fall of the pulse, compared to the waveform of the input signal, as shown in FIG. 11E . This is because the CMOS itself inverter does not have the capability of supplying a sufficient amount of electric charge for driving the load.
There normally is lot of weight given to low electric power consumption with semiconductor devices, and logical circuits are structured using relatively small size TFTs. On the other hand, display regions are becoming larger in size, and in addition, the number of pixels is increasing. The load due to the pixels is therefore large. As stated above, pulses are not output normally if a large load is present in the later stage of an inverter with a small driving capability.
A buffer is normally formed between a driver circuit portion and a pixel portion. Typically, a plurality of inverter stages are disposed in series as shown in FIG. 11D , and driving of the final load can be performed without problem by driving the inverters that are gradually increased in size. Compared to the structure of FIG. 11C , the waveform of an output (Out ii) of a buffer in the final stage (Inv4) is not greatly dulled and thus is output as a normal pulse, and the load in the later stage can be driven.
Display devices have come to be employed in the display portion of many types of electronic devices in recent years, and there is steady expansion in the number of fields in which display devices are used. Display devices are recently being actively employed even in relatively low cost electronic equipment, and therefore further cost reductions are desirable.
A multiple-layer structure is formed for a display device by repeatedly performing processes of film formation, exposure to light using a photomask, and etching. The extreme complexity of the processes therefore invites an increase in manufacturing costs. In addition, in the case in which the driver circuit and the pixel portion are formed integrally on the substrate as discussed above, some defects become a problem which affects the entire manufactured product, and has a large influence on yield.
A method in which the number of processes is reduced as much as possible, and manufacturing can be performed simply in a short period of time can be given as one method of achieving the cost reduction. A display device is manufactured with a structure that uses TFTs with a single polarity type, n-channel TFTs or p-channel TFTs, instead of a CMOS structure for the driver circuit. Processes for adding an impurity which imparts a conductivity to a semiconductor layer can thus be simply cut in half, and in addition, the number of photomasks can be reduced. This is extremely effective from the vie point of cost-related merits.
A conventionally known single polarity type circuit is explained here.
Operation of the inverter shown in FIG. 12A is explained simply here. Note that the terms “gate electrode, input terminal, and output terminal”, and the terms “gate electrode, source region, and drain region” are used separately in this specification for the names of the three electrodes of the TFT in explaining the circuit structure and operation. This is because, although there are many cases in which the voltage between the gate and the source is considered in explaining TFT operation, it is difficult to clearly differentiate the source region and the drain region of the TFT based upon the structure of the TFT and the use of unified names may, instead of being helpful, lead to confusion developing. The terms input terminal and output terminal are used in explaining the input and output of signals. The input terminal or the output terminal is referred to as the source region, and the other is referred to as the drain region, in explaining the relationship of the electric potential between the electrodes of the TFT.
First, operation of the two input inverter of FIG. 12A is explained. When H level is input to a first input (In) and L level is input to a second input (Inb), the TFT 1201 turns off and the TFT 1202 turns on. L level therefore appears in an output (Out) and the electric potential of the output becomes VSS. On the other hand, when L level is input to the first input (In), and H level is input to the second input (Inb), the TFT 1201 turns on the TFT 1202 turns off. H level therefore appears in the output (Out) to pulled up to the VDD side.
At this point, the electric potential is considered when the output (Out) become the H level.
The L level is input to the gate electrode of the TFT 1202 when the H level is input to the gate electrode of the TFT 1201 in FIG. 12A . The TFT 1201 is therefore on, and the TFT 1202 is therefore off. Accordingly, the electric potential of the output (Out) beings to rise, and the voltage between the gate and the source of the TFT 1201 becomes equal to the threshold value VthN when the electric potential of the output (Out) becomes (VDD−VthN). That is, the TFT 1201 turns off at this instant, and therefore the electric potential of the output (Out) cannot rise any further.
A circuit in which a plurality of stages of the inverters shown FIG. 12A are connected in series is shown in FIG. 12B . The output of a certain stage becomes the input of the next stage with this type of circuit. As discussed above, waveforms in which the amplitude is attenuated by VthN with respect to the Input signal appear in an output (Out i) of a first stage and an output (Out ii) of the next stage. An output (Out iii) of a third stage is additionally attenuated by VthN compared with the first stage output (FIG. 12C ). Similarly, attenuation of the amplitude due to the threshold voltage continues to develop and overlap throughout the stages, the amplitude of the waveform shrinks rapidly, and the circuit cannot function as a satisfactory circuit.
A boot strap method is known in order to resolve this problem in structuring the circuit by using single polarity type TFTs. A basic circuit which functions by using the boot strap method is shown in FIG. 13A .
Operation is explained. The amplitude of the input signal is VDD to VSS here. Refer to FIG. 13A and FIG. 13B . FIG. 13B is a diagram showing an input signal (In), an electric potential (Vf) of a gate electrode of the TFT 1302, and an output signal (Out).
When a H level signal is input to the input (In), and a L level signal is input to the inverted input (Inb), the electric potential of the gate electrode of the TFT 1301 is VDD to be in an on state, and therefore the electric potential of the gate electrode of the TFT 1302 is L level to turn off. On the other hand, the H level is input to the gate electrode of the TFT 1303 to turn on, and L level appears at the output (Out).
When a L level signal is input to the input (In), and an H level signal is input to the inverted input (Inb), the electric potential of the gate electrode of the TFT 1301 is VDD to be in an on state, and therefore the electric potential of the gate electrode of the TFT 1302 is H level. However, the electric potential of the gate electrode of the TFT 1301 is VDD, and therefore the electric potential of an output terminal of the TFT 1301, that is the electric potential of the gate electrode of the TFT 1302, becomes (VDD−VthN) to place the TFT 1301 in an off state. The gate electrode of the TFT 1302 is thus placed in a floating state at this instant. On the other hand, the TFT 1303 turns off.
The voltage between the gate and the source of the TFT 1302 rises above the TFT threshold voltage, the TFT 1302 therefore turns on, and the electric potential of an output terminal of the TFT 1302 is pulled up the to VDD side. However, the electric potential of the gate electrode of the TFT 1302 is (VDD−VthN) at this point, and the electric potential of the output terminal of the TFT 1302 can thus only increase to (VDD−2VthN).
The capacitor 1304 is formed between the output terminal and the gate electrode of the TFT 1302, however, and the gate electrode of the TFT 1302 is in a floating state. Therefore the electric potential of the gate electrode of the TFT 1302 rises by ΔVf shown in (ii) of FIG. 13B due to capacitive coupling along with the rise in the electric potential of the output terminal of the TFT 1302. The electric potential of the gate electrode of the TFT 1302 is thus greater than VDD+VthN), and therefore the electric potential of the output terminal of the TFT 1302 then becomes equal to VDD. Note that a dotted line denoted by reference number 1350 in (iii) of FIG. 13B is an output example in the case of using the inverter shown in FIGS. 12A and 12B .
The inverter shown in FIG. 13A outputs an inverted signal without amplitude attenuation due to the threshold value of the TFT by the aforementioned procedure. A method of operating the electric potential of a node in a floating state by utilizing capacitive coupling between two nodes is referred to as a boot strap method.
It takes time for charging a load in the case in which the load attached to the later stage is large in an inverter that uses a boot strap method, and therefore the rise time becomes long. It is possible to increase the effect of the boot strap by making the capacitor 1304 larger. Conversely, however, a delay in the increase of the electric potential of the output with respect to the input becomes long if the capacitor is made too large, thus the size of the capacitor is limited.
The rise time become long, or the boot strap may not function sufficiently and the amplitude of the output signal may not be able to be normalized (specifically, H level may not be sufficiently brought up), in the cases in which the load attached to the later stage of the output is additionally large, the amplitude of the input signal is small (H level is low), the threshold value of the TFT is large, and parasitic capacitance in the gate electrode of the TFT in a floating state is large during boot strap operations, and similar cases.
The present invention has been made in view of the above, and an object of the present invention is therefore to provide a circuit which with a high load driving capability, which is structured to make a rise time short and to make the amplitude of an output signal normal in cases stated above.
As shown in FIG. 1A , there is a structure in which two TFTs are added to the structure of FIG. 13A . The TFTs 1302 and 1303 in FIG. 13A have roles for boot strap operation and for electrical charge and discharge of a load of a latter stage. However, TFTs 102 and 103 contribute only to boot strap operations in the structure shown in FIG. 1A , and TFTs 105 and 106 are formed as TFTs that perform electric charge and discharge of a load. With such structure, iT is possible to obtain good operation with no loss of function even in the case in which the load attached to a later stage becomes somewhat large.
In FIG. 1A , the electric potential of a gate electrode of the TFT 102 in a floating state is taken as V1, and the electric potential of an output electrode of the TFT 102 at this time is taken as V2. A capacitor 104 and a capacitance due to parasitic capacitance an the like exist in the gate electrode of the TFT 102, and their values are taken as C1 and C0, respectively.
V2 fluctuates from V2(0) to V2(1) (where V2(0)<V2(1)). If the value of this fluctuation is taken as ΔV2, the electric potential of V1 also fluctuates from V1(0) to V1(1) (where V1(0)<V4(1)) due to capacitive coupling of C1. If the value of the fluctuation is taken as ΔV1, the relationship can be shown by the following equation:
ΔV1=ΔV2[C1/(C0+C1)] (Eq. 1)
ΔV1=ΔV2[C1/(C0+C1)] (Eq. 1)
There are two ways for increasing ΔV1, namely increasing the amount of fluctuation in the electric potential of the gate electrode of the TFT 102 in a floating state: (1) increasing the value of [C1/(C0+C1)], and (2) increasing ΔV2. In the former case, the coupling capacitance C1 between the gate electrode and the output electrode of the TFT 102 sufficiently is made large with respect to the parasitic capacitance C0. In the latter case, ΔV2=[V2(1)−V2 (0)], and therefor a method of reducing V2(0) and a method of increasing V2(1) can be considered. It is difficult to increase V2(1) to be equal to or greater than VDD with this structure, and therefore the method of reducing V2(0) is employed.
The voltage between a gate and a source of the TFT 102 can be increased by reducing V2(0), and a larger amount of drain current can be made to flow. Shortening of the rise time can thus be expected.
In order to achieve such means, as shown in FIG. 1B , a capacitor means 155 is formed between a gate electrode and an output terminal of a TFT 153 in addition to a capacitor means 154 formed between a gate electrode and an output terminal of a TFT 152.
The load driving capability can be increased with such structure, and therefore the number of stages for buffers and the like can be made smaller, which lead to redaction in the surface area occupied by circuits.
The driver circuit and the pixel portion can be structured by using TFTs with the single polarity, and therefore a portion of processes for adding impurity elements to semiconductor layers can be omitted in a process of manufacturing a display device.
Structures of the present invention are described below.
A semiconductor device according to the present invention is characterized by comprising:
-
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising: a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor, and a capacitor between the output terminal of the fifth transistor and an output terminal of the first transistor;
- a first signal input portion for inputting a first signal to a gate electrode of the third transistor and a gate electrode of the fourth transistor;
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor; and
- a signal output portion,
- in which:
- each of the first through the fifth transistors have the same conductivity type,
- the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
- an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
A semiconductor device according to the present invention is characterized by comprising:
-
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising: a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor; a first capacitor between a gate electrode of the first transistor and an output terminal of the first transistor; and a second capacitor between a gate electrode of the third transistor and an output terminal of the third transistor;
- a first signal input portion for inputting a first signal to a gate electrode of the third transistor and a gate electrode of the fourth transistor;
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor; and
- a signal output portion,
- in which:
- each of the first through the fifth transistors have the same conductivity type,
- the output terminal of the first transistor and the output terminal of the third transistor are electrically connected,
- an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
The semiconductor device according to the present invention is characterized id that the capacitor is formed by:
-
- two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
- an insulating material between the two electrodes.
The semiconductor device according to the present invention is characterized in that one of the first and second capacitor means is formed by:
-
- two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and an insulating material between the two electrodes.
The semiconductor device according to the present invention is characterized in that:
-
- electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and
- the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
The semiconductor device according to the present invention is characterized in that:
-
- electric potential of the third electric power source is more than electric potential of the second electric power source and less than electric potential of the first electric power source when the conductivity type is n-channel, and
- the electric potential of the third electric power source is less than the electric potential of the second electric power source and more than the electric potential of the first electric power source when the conductivity type is p-channel.
A semiconductor device according to the present invention is characterized by comprising:
-
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising: a fifth transistor comprising an input terminal electrically connected to the first electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor; a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor; and a capacitor between the gate electrode and an output terminal of the first transistor;
- a first signal input portion for inputting a first signal to a gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor; and
- a signal output portion,
- in which:
- each of the first through the sixth transistors have the same conductivity type,
- the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
- an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
A semiconductor device according to the present invention is characterized by comprising:
-
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising: a fifth transistor comprising an input terminal electrically connected to the first electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor; a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor; a first capacitor between the gate electrode and an output terminal of the first transistor; and a second capacitor between a gate electrode and an output terminal of the first transistor;
- a first signal input portion for inputting a first signal to the gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor,
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor; and
- a signal output portion,
- in which:
- each of the first through the sixth transistors have the same conductivity type,
- the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
- an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
The semiconductor device according to the present invention is characterized in that the capacitor is formed by:
-
- two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
- an insulating material between the two electrodes.
The semiconductor device according to the present invention is characterized in that one of the first and second capacitor means is formed by:
-
- two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
- an insulating material between the two electrodes.
The semiconductor device according to the present invention is characterized in that:
-
- wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is a n-channel, and
- wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
In the accompanying drawings:
Operation of the circuits shown in FIGS. 1A and 1B is explained. Basic circuit operation is explained using FIGS. 13A and 13B . The L level appears from a signal output portion (Out) when the H level is input to a first signal input portion (In) and the L level is input to a second signal input portion (Inb), and the H level appears from the signal output portion (Out) when the L level is input to the first signal input portion (In) and the H level is input to the second signal input portion (Inb). At this time, attenuation in the voltage amplitude caused by the TFT threshold value is compensated by using a boot strap method, and an output with a normal amplitude can be obtained. In addition, boot strap operations, and load charge and discharge operations are each performed by independent TFTs, and therefore high speed operation is possible, and a sufficient load driving capability can be achieved.
In addition, there is a specific operation at the instant of changing the signal input to the first signal input portion (In) from the H level to the L level in the structure of FIG. 1B . An explanation is as follows.
The H level is input to the first signal input portion (In), and TFTs 153 and 157 are placed in an on state. On the other hand, VDD is always input to a gate electrode of a TFT 151, and gate electrodes of TFTs 152 and 156 become the L level through the TFT 151 to be turn off when the L level is input to the second signal input portion (Inb). The L level therefore appears in the signal output portion (Out).
The signal input to the first signal input portion (In) then begins to become the L level from the H level. The TFT turns off when the electric potential falls below the threshold value of the TFT 153. An output terminal of the TFT 153 is therefore momentarily in a floating state. In addition, the electric potential of the signal input to the first signal input portion (In) drops, that is, the electric potential of a gate electrode of the TFT 153 drops. The electric potential of the output terminal of the TFT 153 in a floating state then drops by an amount denoted by ΔVf′ due to capacitive coupling by a capacitor 155 between the gate electrode and the output terminal of the TFT 153, as shown in FIG. 1C .
At the same time, the signal input to the second signal input portion (Inb) becomes the H level from the L level. The electric potential of the gate electrodes of the TFTs 152 and 156 therefore rises to be placed in a floating state when the electric potential becomes (VDD−VthN).
the electric potential of an output terminal of the TFT 152 is (VSS−ΔVf) here, and the voltage between a gate and a source of the TFT 152 becomes larger than the voltage between the gate and the source of the TFT 1302 in the circuit shown in FIG. 13A . That is, more electric current flows in the TFT 152 than in the TFT 1302.
The increase in the electric potential of the output terminal of the TFT 152 therefore becomes faster than the increase in the electric potential of the output terminal of the TFT 1302. Due to the boot strap, the speed, at which the electric potentials of the gate electrodes of the TFTs 152 and 156 lift up, also becomes faster than the speed at which the electric potential of the gate electrode of the TFT 1302 does.
The H level therefore appears at the signal output portion (Out), and the time for the increase in the electric potential becomes shorter than that of the circuit shown in FIG. 13A . In addition, the amount of electric current flowing in the TFTs 152 and 156 increases, and therefore the electric potential of the gate electrode of the TFT 152 can also increase to a higher value than (VDD+VthN) due to normal boot strap operations if the load attached to the output stage is large. In the case of the circuit using the conventional boot strap method shown in FIG. 13A , there are some cases where the electric potential of the gate electrode of the TFT 1302 in a floating state cannot be brought up to an electric potential that is higher than (VDD+VthN), as shown in the dotted line waveform in FIG. 1B , and therefore the amplitude of the output signal is also attenuated.
With FIGS. 2A and 2E , transitional operations at the instant of changing the signal input to the first signal input portion (In) from the H level to the L level are explained in detail.
As shown in FIG. 2D , the signal input to the first signal input portion (In) then becomes the L level from the H level. The electric potential of the gate electrode of the TFT 153 therefore drops, and the TFT 153 turns off when the electric potential falls lower than the threshold value. The node V152S is then placed in a floating state. In addition, the electric potential of the node V153G also drops after falling below the threshold value of the TFT 153, and the electric potential becomes VSS. The electric potential of the node V152S drops by ΔVf due to capacitive coupling by the capacitor 155 with the node 153G. The electric potential of the node V153G therefore becomes (VSS−ΔVf′), as shown in FIG. 2D .
At the same time, the signal input to the second signal input portion (Inb) becomes the H level from the L level. The TFT 152 thus turns on, and the node V152G is placed in a floating state when the electric potential of the node V152G becomes (VDD−VthN). Next, there is a further increase by ΔVf due to the boot strap, and the electric potential of the node V152G becomes (VDD−VthN+ΔVf). The electric potential of the node V152S therefore increases to VDD. At the same time, the electric potential of the gate electrode of the TFT 156 also becomes equal to the electric potential of the node V152G, and therefore the H level increased normally to VDD appears in the signal output portion (Out).
It is possible to obtain a sufficient driving ability in accordance with the operations shown above in the present invention, even if there is a large load in a later stage. Note that a structure that uses p-channel TFTs may of course be employed although an example of a case in which the polarity of the TFTs is n-channel is explained in this Embodiment Mode.
Embodiments of the present invention are discussed below.
In the circuits shown in FIGS. 1A and 1B and explained in the Embodiment Mode, the role of placing the gate electrode of the TFT 102 in a floating state is accomplished by only the TFT 101, There is the fact discussed above that the gate electrode of the TFT 102 is placed in a floating state when the electric potential of the gate electrode of the TFT 102 becomes (VDD−VthN). If the H level of the input signal is not satisfy (VDD−VthN), the TFT 101 does not turn off, and therefore the gate electrode of the TFT 102 is not placed in a floating state, and accordingly the boot strap does not work.
The circuit shown in FIG. 9A is used in the above case. A difference between the circuits shown in FIG. 9A and in FIG. 1A is that two TFTs, a TFT 901 and a TFT 902, are used in order to place a gate electrode of a TFT 903 in a floating state. The above stated condition is considered with the circuit of FIG. 9A . The voltage amplitude of an input signal is VDD0(Hi) to VSS(Lo), and the relationship among the electric potentials is:
VSS<VthN=VDD0<(VDD−VthN) (Eq. 2).
VSS<VthN=VDD0<(VDD−VthN) (Eq. 2).
When the H level is input to the first signal input portion (In) and the L level is input to the second signal input portion (Inb), the TFT 902, a TFT 904, and a TFT 908 turn on. In addition, the TFT 901 turns off, and therefore the L level is input to a gate electrode of the TFT 903 and a gate electrode of a TFT 907 and the TFTs 903 and 907 turn off. The L level thus appears in the signal output portion (Out).
On the other hand, when the L level is input to the first signal input portion (In) and the H level is input to the second signal input portion (Inb), then the TFT 902, the TFT 904, and the TFT 908 turns off. Further, the TFT 901 turns on, and the electric potentials of the gate electrodes of the TFTs 903 and 907 increase. The electric potential of the gate electrode of the TFT 901 at this point is VDD0, and therefore a floating state arises with certainty when the electric potential of the gate electrodes of the TFTs 903 and 907 becomes (VDD0−VthN). The H level then appears normally in the signal output portion (Out) due to the boot strap, as shown in the Embodiment Mode.
The output with an amplitude of (VDD−VSS) can be obtained for input of signals with an amplitude of (VDD0−VSS) if the circuit shown in FIG. 9A is used. That is, the circuit can be made to function as a level shifter.
This embodiment gives a description on a method of manufacturing TFTs for driving circuit provided in a pixel portion and in the periphery of the pixel potion formed on the same substrate. Note that the processes of manufacturing a liquid crystal device is described as an example here, as mentioned above, there is not particular limitation on the liquid crystal display device.
First, as shown in FIG. 7A , a base film 5002 is formed from an insulating film such as a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on a glass substrate 5001. The substrate 5001 is formed of barium borosilicate glass typical example of which is Corning #7059 glass or Corning #1737 glass (product of Corning Incorporated), or of aluminoborosilicate glass. The base film 5002 is, for example, (now shown) a laminate of a silicon oxynitride film that is formed from SiH4, NH3, and N2O by plasma CVD to a thickness of 10 to 200 nm (preferably 50 to 100 nm) and a silicon oxynitride hydride film formed from SiH4 and N2O by plasma CVD to a thickness of 50 to 200 nm (preferably 100 to 150 nm).
A semiconductor film having an amorphous structure is crystallized by laser crystallization or a known thermal crystallization method to form a crystalline semiconductor film. The crystalline semiconductor film makes island-like semiconductor layers 5003 to 5005. The island-like semiconductor layers 5003 to 5005 each have a thickness of 25 to 80 nm (preferably 30 to 60 nm). No limitation is put on the choice of material of the crystalline semiconductor film but it is preferable to use silicon or a silicon germanium (SiGe) alloy.
When the crystalline semiconductor film is formed by laser crystallization, a pulse oscillation-type or continuous wave excimer laser, YAG laser, or YVO4 laser is used. Laser light emitted from a laser as those given in the above is desirably collected into a linear beam by an optical system before irradiating the semiconductor film. Conditions of crystallization are set suitably by an operator. However, if an excimer laser is used, the pulse oscillation frequency is set to 30 Hz and the laser energy density is set to 100 to 400 mJ/cm2 (typically 200 to 300 mJ/cm2). If a YAG laser is used, second harmonic thereof is employed and the pulse oscillation frequency is set to 1 to 10 kHz while setting the laser energy density to 300 to 600 mJ/cm2 (typically 350 to 500 mJ/cm2). The laser light is collected into a linear beam having a width of 100 to 1000 μm, for example, 400 μm, to irradiate the entire substrate. The substrate is irradiated with the linear laser light with the beam overlapping each other at an overlap ratio of 80 to 98%.
Next, a gate insulating film 5006 is formed so as to cover the island-like semiconductor layers 5003 to 5005. The gate insulating film 5006 is formed from an insulating film containing silicon by plasma CVD or sputtering to a thickness of 40 to 150 nm. In this embodiment, a silicon oxynitride film having a thickness of 120 nm is used. Needless to say, the gate insulating film is not limited to a silicon oxynitride film but may be a single layer or a laminate of other insulating films containing silicon. For example, if a silicon oxide film is used for the gate insulating film, the film is formed by plasma CVD in which TEOS (tetraethyl orthosilicate) is mixed with O2 and the reaction pressure is set to 40 Pa, the substrate temperature to 300 to 400° C., the frequency is set high to 13.56 MHz, and the power density is set to 0.5 to 0.8 W/cm2 for electric discharge. The silicon oxide film thus formed can provide the gate insulating film with excellent characteristics when it is subjected to subsequent thermal annealing at 400 to 500° C.
On the gate insulating film 5006, a first conductive film 5007 and a second conductive film 5008 for forming gate electrodes are formed. In this embodiment, the first conductive film 5007 is a Ta film with a thickness of 50 to 100 nm and the second conductive film 5009 is a W film with a thickness of 100 to 300 nm (FIG. 7A ).
The Ta film is formed by sputtering in which Ta as a target is sputtered with Ar. In this case, an appropriate amount of Xe or Kr is added to Ar to ease the internal stress of the Ta film and thus prevent the Ta film from peeling off. The resistivity of a Ta film in α phase is about 20 μΩcm and is usable for a gate electrode. On the other hand, the resistivity of a Ta film in β phase is about 180 μΩcm and is not suitable for a gate electrode. A Ta film in α phase can readily be obtained when a base with a thickness of about 10 to 50 nm is formed from tantalum nitride (TaN) that has a crystal structure approximate to that of the α phase Ta film.
The W film is formed by sputtering with W as a target. Alternatively, the W film may be formed by thermal CVD using tungsten hexafluoride (WF6). In either case, the W film has to have a low resistivity in order to use the W film as a gate electrode. A desirable resistivity of the W film is 20 μΩcm or lower. The resistivity of the W film can be reduced by increasing the crystal grain size, but if there are too many impurity elements such as oxygen in the W film, crystallization is inhibited to raise the resistivity. Accordingly, when the W film is formed by sputtering a W target with a purity of 99.9999% is used and a great care is taken not to allow impurities in the air to mix in the W film being formed. As a result, the W film can have a resistivity of 9 to 20 μΩcm.
Although the first conductive film 5007 is a Ta film and the second conductive film 5008 is a W film in this embodiment, there is no particular limitation. The conductive films may be formed of any element selected from a group consisting of Ta, W, Mo, Al, and Cu, or of an alloy material or compound material mainly containing the elements listed above. A semiconductor film, typically a polycrystalline silicon film doped with an impurity element such as phosphorus, may be used instead. Other desirable combinations of materials for the first and second conductive films than the one shown in this embodiment include: tantalum nitride (TaN) for the first conductive film 5007 and W for the second conductive film 5008; tantalum nitride (TaN) for the first conductive film 5007 and Al for the second conductive film 5008; and tantalum nitride (TaN) for the first conductive film 5007 and Cu for the second conductive film 5008.
Next, a resist mask 5009 is formed to carry out first etching treatment for forming electrodes and wiring lines. In this embodiment, ICP (inductively coupled plasma) etching is employed in which CF4 and Cl2 are mixed as etching gas and an RF (13.56 MHz) power of 500 W is given to a coiled electrode at a pressure of 1 Pa to generate plasma. The substrate side (sample stage) also receives an RF (13.56 MHz) power of 100 W so that a substantially negative self-bias voltage is applied. When the mixture of CF4 and Cl2 is used, the W film and the Ta film are etched to the same degree.
Under the above etching conditions, if the resist mask is properly shaped, the first conductive films and the second conductive film are tapered around the edges by the effect of the bias voltage applied to the substrate side. The angle of the tapered portions is 15° to 45°. In order to etch the conductive films without leaving any residue on the gate insulating film, the etching time is prolonged by about 10 to 20%. The selective radio of the W film to the silicon oxynitride film is 2 to 4 (typically 3), and therefore a region where the silicon oxynitride film is exposed is etched by about 20 to 50 nm by the over-etching treatment. In this way, first shape conductive layers 5010 to 5013 comprising first conductive layers 5010a to 5013a and second conductive layers 5010b to 5013b are formed from the first conductive film and the second conductive film through the first etching treatment. At this point, regions of the gate insulating film 5006 that are not covered with the first shape conductive layers 5010 to 5013 are etched an thinned by about 20 to 50 nm. (FIG. 7B )
First doping treatment is conducted next for doping of an impurity element that gives the N-type conductivity (FIG. 7B ). Ion doping or ion implanting is employed. In ion doping, the dose is set to 1×1013 to 5×1014 atoms/cm2 and the acceleration voltage is set to 60 to 100 keV. The impurity element that gives the N-type conductivity is an element belonging to Group 15, typically, phosphorus (P) or arsenic (As). Here, phosphorus (P) is used. In this case, the conductive layers 5010 to 5013 serve as masks against the impurity element that gives the n-type conductivity, and first impurity regions 5014 to 5016 are formed in a self-aligning manner. The first impurity regions 5014 to 5016 each contain the impurity element that gives the N-type conductivity in a concentration of 1×1020 to 1×1021 atoms/cm3.
Next, as shown in FIG. 7C , a second etching process is performed. The ICP etching method is similarly used in which CF4, Cl2, and O2 are mixed as the etching gases, and an RF power of 500 W is applied to a coil type electrode under a pressure of 1 Pa to generate plasma. An RF power of 50 W is applied to the side of the substrate (sample stage), and a low self bias voltage as compared with the first etching process is applied thereto. In accordance with the conditions, the W film as the second conductive layer is anisotropically etched, and the Ta film as the first conductive layer is anisotropically etched at an etching rate lower than the W film to form second shape conductive layers 5017 to 5020 (first conductive layers 5017a to 5020a and second conductive layers 5017b to 5020b). Reference number 5006 designates a gate insulating film, and regions which are not covered with the second shape conductive layers 5017 to 5020 are etched into a film thickness of about 20 to 50 nm, to for thin regions.
The reaction of the W film and the Ta film to etching by the mixture gas of CF4 and Cl2 can be deduced from the vapor pressure of radical or ion species generated and of reaction products. Comparing the vapor pressure among fluorides and chlorides of W and Ta, WF6 that is a fluoride of W has an extremely high vapor pressure while the others, namely, WCl5, TaF5, and TaCl5 have a vapor pressure about the same degree. Accordingly, the W film and the Ta film are both etched with the mixture gas of CF4 and Cl2. However, when appropriate amount of O2 is added to this mixture gas, CF4 and O2 react to each other to be changed into CO and F, generating a large amount of F radicals or F ions. As a result, the W film whose fluoride has a high vapor pressure is etched at an increased etching rate. On the other hand, the etching rate of the Ta film is not increased much when F ions are increased in number. Since Ta is more easily oxidized than W, the addition of O2 results in oxidation of the surface of the Ta film. The oxide of Ta does not react with fluorine or chlorine and therefore the etching rate of the Ta film is reduced further. Thus a difference in etching rate is introduced between the W film and the Ta film, so that the etching rate of the W film is set faster than the etching rate of the Ta film.
Then second doping treatment is conducted (FIG. 7C ). In the second doping treatment, the film is doped with an impurity element that gives the N-type conductivity in a dose smaller than in the first doping treatment and at a high acceleration voltage. For example, the acceleration voltage is set to 70 to 120 KeV and the dose is set to 1×1013 atoms/cm2 to form new impurity regions inside the first impurity regions that are formed in the island-like semiconductor layers in FIG. 7B . While the second conductive layers 5017b to 5020b are used as masks against the impurity element, regions under the first conductive layers 5017a to 5020a are also doped with the impurity element. Thus formed are second impurity regions 5021 to 5023 overlapping the first conductive layer.
Next, as shown in FIG. 8A , a third etching process is performed. In this embodiment, an ICP etching device is employed and Cl2 is used as etching gas. Etching is conducted for 70 seconds, setting the flow rate of Cl2 to 60 (sccm), and an RF power of 350 W is applied to a coil type electrode under a pressure of 1 Pa to generate plasma. An RF power is also applied to the side of the substrate (sample stage) so that a substantially negative self-bias voltage is applied. Through the third etching process, the first conductive layer is etched to reduce the region, thereby third shape conductive layers 5024 to 5027 (first conductive layers 5024a to 5027a and second conductive layers 5024b to 5027b) are formed. A portion of the second impurity regions 5021 to 5023 include the third impurity regions 5028 to 5030 that are not covered with the first conductive layer.
Through the steps above, the impurity regions are formed in the respective island-like semiconductor layers. The third shape conductive layers 5024 to 5027 overlapping the island-like semiconductor layers function as gate electrodes of TFTs.
The impurity elements used to dope the island-like semiconductor layers in order to control the conductivity types are activated. The activation step is carried out by thermal annealing using an annealing furnace. Other activation adoptable methods include laser annealing and rapid thermal annealing (RTA). The thermal annealing is conducted in a nitrogen atmosphere with an oxygen concentration of 1 ppm or less, preferably 0.1 ppm or less, at 400 to 700° C., typically 500 to 600° C. In this embodiment, the substrate is subjected to heat treatment at 500° C. for four hours. However, if the wiring line material used for the third shape conductive layers 5024 to 5027 are weak against heat, the activation is desirably made after an interlayer insulating film (mainly containing silicon) is formed in order to protect the wiring lines and others.
Another heat treatment is conducted in an atmosphere containing 3 to 100% hydrogen at 300 to 450° C. for one to twelve hours, thereby hydrogenating the island-like semiconductor layers. The hydrogenation steps are to terminate dangling bonds in the semiconductor layers using thermally excited hydrogen. Alternatively, plasma hydrogenation (using hydrogen that is excited by plasma) may be employed.
As shown in FIG. 8B , a first interlayer insulating film 5031 is formed next from a silicon oxynitride film with a thickness of 100 to 200 nm. A second interlayer insulating film 5032 is formed thereon from an organic insulating material. Thereafter, contact holes are formed corresponding to the first interlayer insulating film 5031, the second interlayer insulating film 5032, and the gate insulating film 5006. A film made of wiring lines material is formed, whereby connection -wiring lines 5033 to 5036 and a pixel electrode 5037 are formed by patterning.
The second interlayer insulating film 5032 is a film made of an organic resin. Examples of the usable organic resin includes polyimide, polyamide, acrylic resin, and BCB (benzocyclobutene). Since planarization is a significant aspect of the role of the second interlayer insulating film 5032, acrylic resin that can level the surface well is particularly preferable. In this embodiment, the acrylic film is thick enough to eliminate the level differences caused by the TFTs. An appropriate thickness of the film is 1 to 5 μm (preferably 2 to 4 μm).
The contact holes are formed by dry etching or wet etching, and include contact holes reaching the impurity regions 5014 to 5016 having the N-type conductivity, the source signal lines, the gate signal lines (now shown), power supply lines (not shown), and gate electrodes 5024 to 5026 (not shown) respectively.
Further, a lamination film of a three layer structure, in which a 100 nm thick Ti film, a 300 nm thick Al film containing Ti, and a 150 nm thick Ti film are formed in succession by sputtering wirings 5033 to 5036. Of course, other conductive films may be used. As to the pixel electrode 5037, in a case of that the display device is a reflect type, is formed by a material in high reflectivity. On the other hand, in a case of that the display device is a transmission type, the pixel electrode 5037 is formed by using a material like Indium Tin Oxide (ITO) or the like that has transparent conductivity.
An opposing substrate 5038 is prepared next. A light shielding film is formed on the opposing substrate 5038. The light shielding film is formed of a material such as chrome (Cr) into a thickness of 100 to 200 nm.
On the other side, an opposing electrode 5040 is formed in the pixel portion. The opposing electrode is formed by using a transparent conductive material such as ITO. Further, it is preferable that the film thickness of the opposing electrode be from 100 to 120 nm in order to maintain a high transmittivity of visible light.
Orientation films 5041 and 5042 are formed in the active matrix substrate and the opposing substrate. It is preferable that the film thickness of the orientation films 5041 and 5042 be from 30 to 80 nm. Furthermore, materials such as SE7992, for example, manufactured by Nissan Chemical Industries, Ltd., can be used for the orientation films. If an orientation film having a high pre-tilt angle is used, then the generation of disclination can be controlled at the same time as driving the liquid crystal display device by an active matrix method.
The orientation films 5041 and 5042 undergo a rubbing process next. It is preferable that the rubbing direction show a counterclockwise TN (twisted nematic) orientation when the liquid crystal display device is complete.
Although now shown in particular in the figures for Embodiment 2, it is also possible to increase the uniformity of a cell gap by distributing spacers within the pixels or by patterning. A photosensitive resin film is formed and patterned in Embodiment 2, thus fanning spacers having a height of 4.0 μm.
The active matrix substrate and the opposing substrate are then bonded by using a sealant 5043. The thermosetting sealant XN-21S manufactured by Mitsui Chemicals is used as the sealant. A filler is mixed into the sealant. Note that the height of the filler is set to 4.0 μm. After the sealant is hardened, the active matrix substrate and the opposing substrate are sectioned simultaneously into predetermined sizes.
Liquid crystals 5044 are injected next. Considering high speed response characteristics and the like, it is preferable to use a low viscosity liquid crystal material for the liquid crystals. A nematic liquid crystal material having an easily controlled orientation is used in Embodiment 2. High response speed ferroelectric liquid crystals and anti-ferroelectric liquid crystals may of course also be used.
In injection port is sealed by using a UV hardening resin or the like after liquid crystal injection is complete. A polarizing sheet is then attached by a known method. Lastly, a connector (flexible printed circuit: FCP) for connecting the elements formed on the substrate, or terminals pulled out from the circuits with external signal terminals is attached, completing a manufactured product (see FIG. 8C ). This state, one capable of being shipped as a finished product, is referred to as a liquid crystal device within this specification.
Further, the number of photomasks necessary for manufacturing the active matrix substrate can be kept to four (island shape semiconductor layer patter, first wiring pattern (gate wirings, island shape source wirings, capacitor wirings), contact hole pattern, and second wiring pattern (including pixel electrodes and connection electrodes)) in accordance with the processes disclosed in Embodiment 2. As a result, processing can be shortened, and this contributes to a reduction in manufacturing costs and to an increase in yield.
An example of manufacturing a display device which has the circuit as shown in the Embodiment Mode and Embodiment 1 is discussed in Embodiment 3.
A schematic diagram of the display device is shown in FIG. 10A . A pixel portion 1001 is placed in a center portion of a substrate 1000. A source signal line driver circuit 1002 for controlling source signal lines, and gate signal line driver circuits 1007 for controlling gate signal lines are formed in the periphery of the pixel portion 1001. Although the gate signal line driver circuits 1007 are placed symmetrically on both side of the pixel portion 1001, there may be a gate signal driver circuit on only one side thereof.
Signals input from the outside for driving the source signal line driver circuit 1002 and the gate signal line driver circuits 1007 are input through an FPC 1010. The signals input from the FPC 1010 have small voltage amplitudes, and therefore undergo transformation of the voltage amplitudes by level shifters 1006, and then, are input to the source signal line driver circuit 1002 and the gate signal line driver circuits 1007 in Embodiment 3.
A lead-out wiring 1021 is electrically connected to an FPC side wiring 1022 of an FPC 1010 through an anisotropic conductive film 1023. Further, as shown in FIG. 10C , the anisotropic conductive film 1023 has conductive filter 1024. The lead-out wiring 1021 on the substrate 1000 and the FPC side wiring 1022 on the FPC 1010 are electrically connected to each other through the conductive filler 1024 by heat-pressing the substrata 1000 and the FPC 1010.
A source side clock signal (S-CK), a source side clock inverted signal (S-CKb), a source side start pulse (S-SP), analog image signals (Video 1-8) are input to the source signal line driver circuit. Among these signals, the clock signal and the start pulse are input after undergoing amplitude transformation by the level shifters 301 and 302. Note that although the analog image signals divided into 8 divisions are input in Embodiment 3, substantially there is no limitation when the display device is manufactured.
The structure of the shift registers is shown in FIG. 4 . A block denoted by reference numeral 400 in a block diagram of FIG. 4A is a pulse output circuit for outputting one stage portion of sampling pulses. Shift registers of FIG. 4A are structured by n stages (where n is a natural number, 1<n) of pulse output circuits.
Circuit operation is explained in detail here with reference to the timing chart shown in FIG. 14 . In the k-th stage pulse output circuit, the output pulse from the (k−1)-th stage pulse output circuit is input to the gate electrodes of the TFTs 401 and 404 to become H level (a start pulses is input if k=1, namely for the initial stage), and the TFTs 401 turn on (refer to FIG. 14 , reference number 1401). The electric potential of a gate electrode of the TFT 405 is pulled up to the VDD side (FIG. 14 , reference numeral 1402), and the TFT 401 turns off to the gate electrode of the TFT 405 placed in a floating state when the electric potential becomes VDD−VthN. The voltage between a gate and a source of the TFT 405 is greater than the threshold value at this point, and the TFT 405 turns on. On the other hand, pulses are not input to the gate electrodes of the TFTs 402 and 403 to remain at L level and the TFTs 402 and 403 are therefore in an off state. The electric potential of a gate electrode of the TFT 406 is therefore L level to be turned off. The electric potential of an output terminal (SR out) of the pulse output circuit is thus pulled up to the VDD side in accordance with the clock signal becoming H level (S-CK or S-CKb) input to an input electrode of the TFT 405 (FIG. 14 , reference numeral 1403). In this state, however, the electric potential of the output terminal (SR out) of the pulse output circuit drops further by the threshold value with respect to the electric potential (VDD−VthN) of the gate electrode of the TFT 405, and only an increase to [VDD−2(VthN)] is obtained.
The capacitor 407 is formed between the gate electrode and the output electrode of the TFT 405 here, and in addition, the gate electrode of the TFT 405 is in a floating state. The electric potential of the gate electrode of the TFT 405 is therefore further pulled up from (VDDΔVthN) by the capacitor 407 in accordance with the rise in the electric potential of the output terminal (SR out) of the pulse output circuit, namely the rise in the electric potential of the output electrode of the TFT 405. In accordance with this operation, the final electric potential of the gate electrode of the TFT 405 becomes higher than (VDD+VthN) (FIG. 14 , reference number 1402). The electric potential of the output terminal (SR out) of the pulse output circuit is not influenced by the threshold value of the TFT 405, and increases normally to VDD (FIG. 14 , reference numeral 1403).
Similarly a pulse is output from the (k+1)-th stage pulse output circuit (FIG. 14 , reference numeral 1404). The output pulse of the (k+1)-th stage is returned to the k-th stage and is input to the gate electrodes of the TFTs 402 and 403. The electric potentials of the gate electrodes of the TFTs 402 and 403 become H level, and the TFTs 402 and 403 turn on. The electric potential of the gate electrode of the TFT 405 is pulled down to the VSS side, and the TFT 405 turns off. Simultaneously, the electric potential of the gate electrode of the TFT 406 becomes H level, and the TFT 406 turns on. The electric potential of the output terminal (SR out) of the k-stage pulse output circuit becomes L level.
Pulses with amplitude between VDD−VSS are then output one after another by similar operations up through the final stage. Circuit operation is also similar for reverse direction scanning.
In the final stage, a pulse is not returned from the next stage, and therefore the clock signal continues to be output through the TFT 405 (FIG. 14 , reference numeral 1407). The output pulses from the pulse output circuit of the final stage therefore cannot be used as sampling pulses. Similarly, the output pulses from the initial stage are final output pulses in the case of the reverse direction scanning, and therefore cannot be used as sampling pulses. In the circuit shown in Embodiment 3, the shift register is therefore structured by pulse output circuits with two more stages than the necessary number of stages. The pulse output circuits at both ends are handled as dummy stages. Even so, it is necessary to stop the final output by some method before the next horizontal period begins, and therefore the final output is stopped at the point where the start pulse for the next horizontal period is input by using the start pulse as the input for the initial stage and the period input for the final stage period.
The circuit structure of the initial stage unit (Buf Unit 1) is shown in FIG. 5B . Signals are input to gate electrodes of TFTs 552, 554 and 556. A gate electrode of a TFT 551 is connected to an input electrode. When H level is input to the gate electrodes of the TFTs 552, 554 and 556 to become in an on state, then the electric potential of gate electrodes of TFTs 553 and 555 become L level, and as a result, an output terminal (out) becomes L level. When L level is input to the gate electrodes of the TFTs 552, 554 and 556, the TFTs 552, 554 and 556 turn off. Since the gate electrode and an input electrode of the TFT 551 are connected and the TFT 551 is normally on, the electric potential of the gate electrodes of the TFT 553 and 555 increase. Similarly to the case of the above-stated shift register, there is capacitive coupling due to a capacitor 557, and the output therefore becomes H level. When the signals input from an input terminal (In) change from H level to L level, the capacitor 558 is used to reduce the electric potential of the output electrode of the TFT 553 once, as described in the Embodiment Mode.
Note the relationship between the TFT 551 and the TFT 552 is as follows: the gate electrode and the input electrode of the TFT 551 are connected, and therefore both the TFT 551 and the TFT 552 are in an on state when the TFT 552 turns on. It is necessary for the electric potential of the gate electrodes of the TFT 553 and 555 to become L level in this state, and therefore it is necessary to design the channel width of the TFT 551 to be smaller than that of the TFT 552. It is sufficient to have the capability for changing the gate electrodes of the TFT 553 and 555, and therefore the channel width of the TFT 551 may be set to a minimum value. Furthermore, it is possible to obtain no increase in electric current consumption in a period during which the TFT 552 is on, due to the penetration path among power supply VDD, the TFT 551, the TFT 552, and power supply VSS, by making the TFT 551 smaller.
Regarding the clock signal level shifter, the initial stage is one input, one output type, while the second and the subsequent stages are two input, one output types. The mutual inputs are also used as inverted inputs.
The start pulse level shifter has a similar structure to that of the aforementioned buffer.
The circuit structure of the unit used for the initial stage of the level shifter is shown in FIG. 6C , while the circuit structure the unit used for the second and the subsequent stages is shown in FIG. 6D . The circuit structure and operation are similar to those shown in FIGS. 5B and 5C , respectively. The only difference is that the amplitude of the signal input to the initial stage is VDDLO−VSS.
The TFT 652, 654, 656 turn on when the H level signal is input from an input terminal (IN) (in the case in which the absolute value |VDDLO−VSS| of the amplitude of the input signal is certainly greater than the absolute value |VthN| of the threshold value of the TFT 652, 654, 656). The electric potential of gate electrodes of TFTs 653 and 654 is pulled down to the VSS side, and therefore L level appears at an output terminal (out). On the other hand, when the signal input to the gate electrode of the TFT 652 is L level, then the TFTs 652, 654, and 656 turn off, and the electric potential of the gate electrodes of the TFT 653 and 655 is pulled up to the VDD side, through the TFT 651. Subsequent operations are similar to those of the aforementioned buffer.
This level shifter with the above structure has a characteristic that the input signal is not directly input to the gate electrode for controlling the TFT 651 connected to the high electric potential side (VDD side). Consequently, the electric potential of the gate electrodes of the TFTs 653 and 655 can be pulled up, no matter what the threshold value of the TFT 651 is, even if the amplitude of the input signal is small. A high amplitude transformation gain is therefore obtained.
A gate side clock signal (G-CK), a gate side clock inverted signal (G-CKb), and a gate side start pulse (G-SP) are input to the gate signal line driver circuit. The input signals are input after undergoing amplitude transformation by level shifters 1501 and 1502.
Note that the shift register 1503, the buffer 1504, the start pulse level shifter 1501, and the clock signal level shifter 1502 are similar to those used in the source signal line driver circuit, and therefore an explanation of their structure and operation is omitted here.
The display device manufactured by using the driver circuit introduced here and pixels shown in Embodiment 2 is structured by only single polarity TFTs, and therefore a portion of a doping process during manufacturing can be eliminated. In addition, it becomes possible to reduce the number of photomasks. It is also possible to resolve the problem of an increase in current consumption due to an expanded signal amplitude by using circuits that apply the bootstrap method, as discussed above.
Although an example of a case in which the pixels and the driver circuits in the periphery are structured by using n-channel TFTs is explained in Embodiment 2, it is also possible to implement the present invention by using p-channel TFTs.
In the case of n-channel TFTs, impurity regions referred to a overlap regions are formed to overlap gate electrodes in order to control hot carrier degradation and the like. In contrast, there is little influence due to hot carrier degradation in the case of p-channel TFTs, and therefore it is not particularly necessary to form overlap regions. It is therefore possible to perform manufacturing by simpler process steps.
A base film 6002 is formed on an insulating substrate 6001 1 such as glass, island-shaped semiconductor layers 6003 to 6005, a gate insulating film 6006, and conductive layers 6007 and 6008 are then formed as shown in FIG. 16A in accordance with Embodiment 2. Although The conductive layers 6007 and 6008 are shown here as a laminate structure, a single layer structure may also be used without any particular problems.
Next, as shown in FIG. 16B , a mask 6009 is formed from resist, and a first etching process is performed. Anisotropic etching is performed in Embodiment 2 by utilizing selectivity due to the materials of the conductive layers with the laminate structure. However, it is not particularly necessary to form regions that become overlap regions here, and therefore normal etching may be performed. A region that becomes thinner by an amount on the order of 20 to 50 nm due to etching at this point is formed in the gate insulating film 6006.
A first doping process for adding an impurity element that imparts p-type conductivity to the island shape semiconductor layers is performed next. Conductive layers 6010 to 6013 are used as masks against the impurity element, and the impurity regions 6014 to 6016 are formed in a self-aligning manner. Boron (B) and the like are typically used as the impurity element that imparts p-type conductivity. The impurity regions 6014 to 6016 are formed by an ion doping using diborane (B2H6) here, and the impurity concentration within the semiconductor layers is set from 2×1020 to 2×1021 atoms/cm3.
The resist mask is then removed, and the state of FIG. 16C is obtained. Manufacturing then continues in accordance with the steps from FIG. 8B onward in Embodiment 2.
Although a circuit shown in FIG. 18A has a similar structure to that of the inverter circuit sown in FIGS. 1A and 1B , electric potential applied to a gate electrode of a TFT 1801 is VDDLO(<VDD), and the amplitude of an input signal is from VDDLO to VSS.
Operation is now explained. The electric potential of gate electrodes of TFTs 1803 and 1807 becomes H level to turn the TFTs 1803 and 1807 on when the H level is input to a first signal input portion (In). At the same time, L level is input to a second signal input portion (Inb). VDDLO is input to the gate electrode of the TFT 1801 to turn the TFT 1801 on, and therefore the electric potential of gate electrodes of TFTs 1802 and 1806 becomes the L level to turn the TFTs 1802 and 1806 off. Thus, L level appears in a signal output portion (Out).
On the other hand, the electric potential of the gate electrode of the TFTs 1803 and 1807 becomes the L level to turn the TFTs 1803 and 1807 off when the L level is input to the first signal input portion (In).
Operation at the instant that the signal input to the first signal input portion (In) switches from the H level to the L level is explained here. The electric potential of the signal input to the first signal input portion (In) begins to fall from the H level, and the voltage between a gate and a source of the TFT 1803 and the voltage between a gate and a source of the TFT 1807 soon fall below the threshold value of the TFTs 1803 and 1807 to turn them off. At this time, output terminals of the TFTs 1803 and 1807 are placed in a floating state. In addition, the electric potential of the gate electrodes of the TFTs 1803 and 1807 continues to drop, and the electric potential of the output terminal of the TFT 1803 also drops as shown by ΔVf′ in (ii) of FIG. 18B due to capacitive coupling by a capacitor 1805 between the gate electrode and the output terminal of the TFT 1803.
On the other hand, the signal input to the second signal input portion (Inb) switches from the L level to the H level. The electric potential of the gate electrodes of the TFTs 1802 and 1806 therefore rises, and reaches (VDDLO−VthN) to be placed in a floating state.
The voltage between a gate and a source of the TFT 1802 and the voltage between a gate and a source of the TFT 1806 at this point become large than VthN to turn the TFTs 1802 and 1806 on. The electric potential of output terminals of the TFTs 1802 and 1806 therefore rises.
Accompanying the increase in the electric potential of the output terminal of the TFT 1802 due to the capacitive coupling by the capacitor 1804 between the gate electrode and the output terminal of the TFT 1802, the electric potential of the gate electrode of the TFT 1802 in the floating state rises again to (VDDLO−VthN+ΔVf).
The electric potential of the gate electrode of the TFT 1806 therefore also rises to (VDDLO−VthN+ΔVf) at the same time, and the H level at the signal output portion (Out) rises normally to VDD.
The circuit shown in FIG. 18A obtains output with an amplitude from VDD to VSS for input of a signal with an amplitude between VDDLO and VSS, and therefore can be used as a level shifter.
A method of manufacturing a light emitting device using light emitting elements such as EL elements in a pixel portion is explained in Embodiment 6.
In accordance with the manufacturing processes disclosed in Embodiment 2, films up through a first interlayer insulating film and a second interlayer insulating film are formed as shown in FIGS. 8A and 8B .
Contact holes are then opened as shown in FIG. 19A . The contact holes are formed by using dry etching or wet etching in order to reach n-type impurity regions, source signal lines, gate signal lines, electric current supply lines, and gate electrodes, respectively.
Next, a transparent conductive film, typically ITO, is formed and patterned into a predetermined shape as an EL element anode 7001. A laminate film made from Ti, Al containing Ti, and Ti is formed, and patterned into a predetermined shape to form wiring electrodes 7002 to 7005 and a pixel electrode 7006. The film thickness of each of the laminate film may be set similarly to those of Embodiment 2. The pixel electrode 7006 is formed so as to overlap with the anode 7001 already formed and exhibit contact.
An insulating film containing silicon (typically a silicon oxide film) is formed next, an opening portion is formed in a location which is corresponding to the anode 7001 of the EL. element, and a third interlayer insulating film 7007 is formed. A sidewall with a tapered shape can easily be formed here by using wet etching in forming the opening portion. Note that EL layer deterioration, cut step, and the like, which are caused by steps, become conspicuous problems in the case in which the sidewalls do not have a sufficiently smooth tapered shape, and it is therefore necessary to exert caution.
After an EL layer 7008 is formed next, an EL element cathode 7009 is formed from cesium (Cs) with a thickness equal to or less than 2 nm and silver (Ag) with a thickness equal to or less than 10 nm. Light generated in the EL layer is transmitted through the cathode 7009 to be emitted by making the film thickness of the cathode 7009 of the EL element extremely thin.
A protective film 7010 is formed next in order to protect the EL element. After work for attaching an FPC and the like is then performed, the light emitting device is complete.
The detailed structure of the EL element is the light emitting device shown in FIG. 19A is shown in FIG. 19B in Embodiment 6. The anode 7101 of the EL element is made from a transparent conductive film, typically ITO. Reference numeral 7102 denotes an EL layer containing a light emitting layer. The cathode of the EL element is made from a Cs film 7103 and an Ag film 7104 each having an extremely thin thickness. Reference numeral 7105 denotes a protective film.
Light generated in an EL layer 7102 is emitted in an upward direction after transmitting through the Cs film 7103 and the Ag film 7104 constituting the cathode by forming the cathode of the EL element with an extremely thin film thickness. That is, the surface area of the light emitting area is not overwhelmed by a region where TFTs are formed, and therefore an aperture ratio of nearly 100% can be achieved.
A manufacturing process of a light emitting device by a method that differs from Embodiment 6 is explained in Embodiment 7.
In accordance with the manufacturing process disclosed in Embodiment 2, films up thorough a first interlayer insulating film and a second interlayer insulating film are formed as shown in FIGS. 8A and 8B .
Contact holes are then opened as shown in FIG. 20A . The contact holes are formed by using dry etching or wet etching in order to reach n-type impurity regions, source signal lines, gate signal lines, electric current supply lines, and gate electrodes, respectively.
Wirings 7201 to 7204 are then formed, and a pixel electrode 7205 which serves as an anode of an EL element is formed as a laminate film made from Ti, Al containing Ti, Ti, and, a transparent conductive film.
An insulating film containing silicon (typically a silicon oxide film) is formed next, an opening portion is formed in a location which is corresponding to the anode of the EL element, and a third interlayer insulating film 7206 is formed. A sidewall with a tapered shape can easily be formed here by using wet etching in forming the opening portion. Note that EL layer deterioration, cut step, and the like caused by steps become conspicuous problems in the case in which the sidewalls do not have a sufficiently smooth tapered shape, and it is therefore necessary to exert caution.
After an EL layer 7207 is formed next, an EL element cathode 7208 is formed from cesium (Cs) with a thickness equal to or less than 2 nm, and silver (Ag) with a thickness equal to or less than 10 nm. Light generated in the EL layer is transmitted through the cathode 7208 to be emitted by making the film thickness of the cathode 7208 the EL element extremely thin.
A protective film 7209 is formed next in order to protect the EL element. After work for attaching an FPC and the like is then performed, the light emitting device is complete.
The detailed structure of the EL element in the light emitting device shown in FIG. 20A is shown in FIG. 20B . The anode of the EL element is made from a metallic film 7301 which is a laminate film of Ti, Al containing Ti, and Ti, and a transparent conductive film 7302, typically ITO. Reference numeral 7303 denotes an EL layer containing a light emitting layer. The cathode of the EL element is made from a Cs film 7304 and an Ag film 7305 each having an extremely thin thickness. Reference numeral 7306 denotes a protective film.
The light emitting device manufactured in accordance with Embodiment 7 has an advantage that an aperture ratio of nearly 100% can be achieved, similar to the display device disclosed in Embodiment 6. In addition, it is possible to perform patterning of the metallic film made from a laminate of Ti, Al containing Ti, Ti, and the transparent conductive film by using a common photomask in forming the wirings and the pixel electrode. It therefore becomes possible to reduce the number of photomasks and to simplify processing.
In the present invention, capacitor means formed in order to perform boot strap operations may utilize a capacitance between a gate and a source of a TFT, and the capacitor means may also be formed by a pair of electrodes of two materials selected from a wiring, a gate electrode, an active layer, and the like, and an insulating layer sandwiched between the pair of electrodes.
An example of a mask layout, in the case of manufacturing an actual circuit as the structure shown in FIG. 21 , is shown in FIG. 22A . It is noted that electric power sources, signals input from respective input terminals, signals output from respective output terminals, reference numerals for TFTs, and the like all correspond to the circuit diagram shown in FIG. 21 .
The present invention can be applied to fabrication of a display device used for various electronic devices. Such electronic devices include a portable information terminal (electronic notebook, mobile computer, cellular phone, etc.), a video camera, a digital camera, a personal computer, a television, cellular phone, and the like. FIG. 17 shows examples of those.
Note that, the examples set forth above are merely examples, and the present invention is not limited to these applications.
With the present invention, it becomes possible to construct a semiconductor device and a pixel portion by using single polarity TFTs.
Further, operational reliability can be increased and the surface area occupied by circuits can be reduced, by making the load driving ability very high as a buffer circuit used in a driver circuit.
In addition, when a display device is manufactured by using single polarity TFTs, it becomes possible to omit a portion of processing steps for adding impurities and to contribute to reducing the costs for manufacturing the display device.
Claims (32)
1. A semiconductor device comprising:
first and second transistors each comprising an input terminal electrically connected to a first electric power source;
third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
a first capacitor between a gate electrode of the first transistor and an output terminal of the first transistor; and
a second capacitor between a gate electrode of the third transistor and an output terminal of the third transistor;
wherein each of the first through the fifth transistors have the same conductivity type,
wherein an output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected.
2. A semiconductor device according to claim 1 , wherein one of the first and second capacitor means capacitors is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
3. A semiconductor device according to claim 1 ,
wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and
wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
4. A semiconductor device according to claim 1 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
5. A semiconductor device according to claim 1 , wherein the semiconductor device is incorporated into a display device comprising a liquid crystal element or an light emitting element.
6. A semiconductor device according to claim 1 , wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
7. A semiconductor device comprising:
first and second transistors each comprising an input terminal one of source and drain electrically connected to a first electric power source each other;
a third and fourth transistors eachtransistor comprising an input terminalone of source and drain electrically connected to a secondfirst electric power source;
a fifth fourth transistor comprising an input terminal electrically connected to the first electric power source or to a third electric power source a gate electrically connected to a first input portion and an output terminal one of source and drain electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
a sixth fifth transistor comprising an input terminal electrically connected to the second electric power source a gate electrically connected to a second input portion and a gate of the third transistor and an output terminal one of source and drain electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor;
a first capacitor provided between the gate of the first transistor and the other one of source and drain of the first transistor; and
a second capacitor provided between the gate of the third transistor and the other one of source and drain of the third transistor,
wherein each of the first through the sixth fifth transistors have the same conductivity type,
wherein the output terminal other one of source and drain of the first transistor and an output terminal the other one of source and drain of the third transistor are electrically connected to each other, and
wherein an output terminal the other one of source and drain of the second transistor and an output terminal of the fourth transistor are is electrically connected to an output portion.
8. A semiconductor device according to claim 7 , further comprising a capacitor between the gate electrode and an output terminal of the first transistor.
9. A semiconductor device according to claim 8 , wherein the capacitor is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
10. A semiconductor device according to claim 7 , further comprising a first capacitor between the gate electrode and an output terminal of the first transistor; and a second capacitor between a gate electrode and an output terminal of the third transistor.
11. A semiconductor device according to claim 10 7, wherein one of the first and second capacitor means capacitors is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
12. A semiconductor device according to claim 7 , farther comprising a first signal input portion for inputting a first signal to a gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
a second signal input portion for inputting a second signal to a gate electrode of the fifth transistor; and
a signal output portion for outputting a third signal from an output terminal of the second transistor and an output terminal of the fourth transistor.
13. A semiconductor device according to claim 7 ,
wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and
wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
14. A semiconductor device according to claim 7 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
15. A semiconductor device according to claim 7 , wherein the semiconductor device is incorporated into a display device comprising a liquid crystal element or an light emitting element.
16. A semiconductor device according to claim 7 , wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
17. A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
first and second transistors each comprising an input terminal electrically connected to a first electric power source;
third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
a first capacitor between a gate electrode of the first transistor and an output terminal of the first transistor; and
a second capacitor between a gate electrode of the third transistor and an output terminal of the third transistor;
wherein each of the first through the fifth transistors have the same conductivity type,
wherein an output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected.
18. A semiconductor device according to claim 17 , wherein one of the first and second capacitor means capacitors is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
19. A semiconductor device according to claim 17 ,
wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and
wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
20. A semiconductor device according to claim 17 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
21. A semiconductor device according to claim 17 , wherein the semiconductor device is a display device comprising a liquid crystal element or an light emitting element.
22. A semiconductor device according to claim 17 , wherein the semiconductor device is an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
23. A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
first and second transistors each comprising an input terminal one of source and drain electrically connected to a first electric power source each other;
a third and fourth transistors eachtransistor comprising an input terminalone of source and drain electrically connected to a secondfirst electric power source;
a fifth fourth transistor comprising an input terminal electrically connected to the first electric power source or to a third electric power source a gate electrically connected to a first input portion and an output terminal one of source and drain electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
a sixth fifth transistor comprising an input terminal electrically connected to the second electric power source a gate electrically connected to a second input portion and a gate of the third transistor and an output terminal one of source and drain electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor;
a first capacitor provided between the gate of the first transistor and the other one of source and drain of the first transistor; and
a second capacitor provided between the gate of the third transistor and the other one of source and drain of the third transistor,
wherein each of the first through the sixth fifth transistors have the same conductivity type,
wherein the output terminal other one of source and drain of the first transistor and an output terminal the other one of source and drain of the third transistor are electrically connected to each other, and
wherein an output terminal the other one of source and drain of the second transistor and an output terminal of the fourth transistor are is electrically connected to an output portion.
24. A semiconductor device according to claim 23 , further comprising a capacitor between the gate electrode and an output terminal of the first transistor.
25. A semiconductor device according to claim 24 , wherein the capacitor is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
26. A semiconductor device according to claim 23 , further comprising a first capacitor between the gate electrode and an output terminal of the first transistor; and a second capacitor between a gate electrode and an output terminal of the third transistor.
27. A semiconductor device according to claim 26 23, wherein one of the first and second capacitor means capacitors is formed by:
two electrodes selected from the group consisting of an active layer, a gate electrode, and a wiring; and
an insulating material between the two electrodes.
28. A semiconductor device according to claim 23 , further comprising a first signal input portion for inputting a first signal to a gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor,
a second signal input portion for inputting a second signal to a gate electrode of the fifth transistor; and
a signal output portion for outputting a third signal from an output terminal of the second transistor and an output terminal of the fourth transistor.
29. A semiconductor device according to claim 23 ,
wherein electric potential of the second electric power source is less than electric potential of the first electric power source when the conductivity type is n-channel, and
wherein the electric potential of the second electric power source is more than the electric potential of the first electric power source when the conductivity type is p-channel.
30. A semiconductor device according to claim 23 , wherein the semiconductor device comprises at least one selected from the group consisting of an inverter, a buffer, a level shifter, and an amplifier.
31. A semiconductor device according to claim 23 , wherein the semiconductor device is a display device comprising a liquid crystal element or an light emitting element.
32. A semiconductor device according to claim 23 , wherein the semiconductor device is an electronic device selected from the group consisting of a computer, a video camera, and a digital camera.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/369,914 USRE43401E1 (en) | 2001-07-30 | 2009-02-12 | Semiconductor device |
US13/471,870 USRE44657E1 (en) | 2001-07-30 | 2012-05-15 | Semiconductor device |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-229054 | 2001-07-30 | ||
JP2001229054 | 2001-07-30 | ||
US10/202,861 US6788108B2 (en) | 2001-07-30 | 2002-07-26 | Semiconductor device |
US10/901,127 US7091749B2 (en) | 2001-07-30 | 2004-07-29 | Semiconductor device |
US11/463,356 US7362139B2 (en) | 2001-07-30 | 2006-08-09 | Semiconductor device |
US12/369,914 USRE43401E1 (en) | 2001-07-30 | 2009-02-12 | Semiconductor device |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/901,127 Continuation US7091749B2 (en) | 2001-07-30 | 2004-07-29 | Semiconductor device |
US11/463,356 Reissue US7362139B2 (en) | 2001-07-30 | 2006-08-09 | Semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/463,356 Division US7362139B2 (en) | 2001-07-30 | 2006-08-09 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
USRE43401E1 true USRE43401E1 (en) | 2012-05-22 |
Family
ID=19061457
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/202,861 Ceased US6788108B2 (en) | 2001-07-30 | 2002-07-26 | Semiconductor device |
US10/901,127 Expired - Lifetime US7091749B2 (en) | 2001-07-30 | 2004-07-29 | Semiconductor device |
US11/484,030 Expired - Lifetime USRE41215E1 (en) | 2001-07-30 | 2006-07-11 | Semiconductor device |
US11/463,356 Ceased US7362139B2 (en) | 2001-07-30 | 2006-08-09 | Semiconductor device |
US12/369,914 Expired - Lifetime USRE43401E1 (en) | 2001-07-30 | 2009-02-12 | Semiconductor device |
US13/471,870 Expired - Lifetime USRE44657E1 (en) | 2001-07-30 | 2012-05-15 | Semiconductor device |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/202,861 Ceased US6788108B2 (en) | 2001-07-30 | 2002-07-26 | Semiconductor device |
US10/901,127 Expired - Lifetime US7091749B2 (en) | 2001-07-30 | 2004-07-29 | Semiconductor device |
US11/484,030 Expired - Lifetime USRE41215E1 (en) | 2001-07-30 | 2006-07-11 | Semiconductor device |
US11/463,356 Ceased US7362139B2 (en) | 2001-07-30 | 2006-08-09 | Semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/471,870 Expired - Lifetime USRE44657E1 (en) | 2001-07-30 | 2012-05-15 | Semiconductor device |
Country Status (2)
Country | Link |
---|---|
US (6) | US6788108B2 (en) |
JP (1) | JP3590398B2 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100245219A1 (en) * | 2005-09-16 | 2010-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of display device |
US20110187694A1 (en) * | 2006-08-31 | 2011-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US20120169681A1 (en) * | 2009-09-30 | 2012-07-05 | Sharp Kabushiki Kaisha | Electronic apparatus and display panel |
US9058889B2 (en) | 2012-07-20 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, display device, and electronic device |
US9432016B2 (en) | 2011-09-30 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20160322014A1 (en) * | 2005-12-28 | 2016-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device, Display Device And Electronic Device |
US9583513B2 (en) | 2006-09-29 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US11276711B2 (en) | 2016-11-29 | 2022-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
US12040795B2 (en) | 2018-12-20 | 2024-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit formed using unipolar transistor, and semiconductor device |
US12148761B2 (en) | 2006-09-29 | 2024-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4785271B2 (en) * | 2001-04-27 | 2011-10-05 | 株式会社半導体エネルギー研究所 | Liquid crystal display device, electronic equipment |
JP4439761B2 (en) | 2001-05-11 | 2010-03-24 | 株式会社半導体エネルギー研究所 | Liquid crystal display device, electronic equipment |
TW582005B (en) * | 2001-05-29 | 2004-04-01 | Semiconductor Energy Lab | Pulse output circuit, shift register, and display device |
SG148032A1 (en) * | 2001-07-16 | 2008-12-31 | Semiconductor Energy Lab | Light emitting device |
US6788108B2 (en) | 2001-07-30 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP4831895B2 (en) * | 2001-08-03 | 2011-12-07 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US7218349B2 (en) * | 2001-08-09 | 2007-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP4397555B2 (en) * | 2001-11-30 | 2010-01-13 | 株式会社半導体エネルギー研究所 | Semiconductor devices, electronic equipment |
KR100532082B1 (en) * | 2001-12-28 | 2005-11-30 | 엘지.필립스 엘시디 주식회사 | An poly-crystalline thin film transistor and a method of fabricating thereof |
JP4032816B2 (en) * | 2002-05-08 | 2008-01-16 | 株式会社日立製作所 | Storage network topology management system |
JP4339103B2 (en) * | 2002-12-25 | 2009-10-07 | 株式会社半導体エネルギー研究所 | Semiconductor device and display device |
JP4425547B2 (en) | 2003-01-17 | 2010-03-03 | 株式会社半導体エネルギー研究所 | Pulse output circuit, shift register, and electronic device |
JP4666963B2 (en) * | 2003-07-10 | 2011-04-06 | 株式会社半導体エネルギー研究所 | Driving method for aging display device |
JP4480968B2 (en) * | 2003-07-18 | 2010-06-16 | 株式会社半導体エネルギー研究所 | Display device |
GB0318611D0 (en) * | 2003-08-08 | 2003-09-10 | Koninkl Philips Electronics Nv | Circuit for signal amplification and use of the same in active matrix devices |
US7405713B2 (en) * | 2003-12-25 | 2008-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic equipment using the same |
JP5142455B2 (en) * | 2003-12-25 | 2013-02-13 | 株式会社半導体エネルギー研究所 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE USING THE SAME |
JP3962953B2 (en) * | 2003-12-26 | 2007-08-22 | カシオ計算機株式会社 | Level shift circuit and signal output circuit including the level shift circuit |
KR100602361B1 (en) * | 2004-09-22 | 2006-07-19 | 삼성에스디아이 주식회사 | Demultiplexer and Driving Method of Light Emitting Display Using the same |
JP4826213B2 (en) * | 2005-03-02 | 2011-11-30 | ソニー株式会社 | Level shift circuit, shift register and display device |
KR100704017B1 (en) * | 2005-03-02 | 2007-04-04 | 재단법인서울대학교산학협력재단 | Level shifter |
TW200703224A (en) * | 2005-03-22 | 2007-01-16 | Koninkl Philips Electronics Nv | A shift register circuit |
US7483013B2 (en) * | 2005-05-20 | 2009-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, display device, and electronic appliance therewith |
JP4866623B2 (en) * | 2005-06-03 | 2012-02-01 | 株式会社 日立ディスプレイズ | Display device and control method thereof |
US7437582B1 (en) * | 2005-08-10 | 2008-10-14 | Xilinx, Inc. | Power control in a data flow processing architecture |
US9153341B2 (en) | 2005-10-18 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Shift register, semiconductor device, display device, and electronic device |
KR101437086B1 (en) | 2006-01-07 | 2014-09-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device, and display device and electronic device having the same |
JP5122748B2 (en) * | 2006-02-03 | 2013-01-16 | 株式会社ジャパンディスプレイイースト | Liquid crystal display |
KR101197058B1 (en) | 2006-02-20 | 2012-11-06 | 삼성디스플레이 주식회사 | Driving apparatus of display device |
TWI354976B (en) * | 2006-04-19 | 2011-12-21 | Au Optronics Corp | Voltage level shifter |
KR20070111774A (en) * | 2006-05-19 | 2007-11-22 | 삼성전자주식회사 | Level shifter |
US7443202B2 (en) * | 2006-06-02 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic apparatus having the same |
TWI427602B (en) | 2006-10-17 | 2014-02-21 | Semiconductor Energy Lab | Pulse output circuit, shift register, and display device |
JP2008203656A (en) * | 2007-02-21 | 2008-09-04 | Sony Corp | Display device and electronic equipment |
JP5057828B2 (en) * | 2007-04-16 | 2012-10-24 | 株式会社ジャパンディスプレイイースト | Display device |
CN101359511B (en) * | 2007-08-03 | 2011-04-27 | 群康科技(深圳)有限公司 | Shift register and liquid crystal display using the shift register |
JP4779165B2 (en) * | 2007-12-19 | 2011-09-28 | 奇美電子股▲ふん▼有限公司 | Gate driver |
JP5141363B2 (en) | 2008-05-03 | 2013-02-13 | ソニー株式会社 | Semiconductor device, display panel and electronic equipment |
JP5136198B2 (en) * | 2008-05-14 | 2013-02-06 | ソニー株式会社 | Semiconductor device, display panel and electronic equipment |
KR101539667B1 (en) * | 2008-06-18 | 2015-07-28 | 삼성전자주식회사 | Inverter device and method of operating the same |
JP4582216B2 (en) * | 2008-07-12 | 2010-11-17 | ソニー株式会社 | Semiconductor device, display panel and electronic equipment |
US8330702B2 (en) * | 2009-02-12 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, display device, and electronic device |
US8422622B2 (en) | 2009-06-15 | 2013-04-16 | Sharp Kabushiki Kaisha | Shift register and display device |
EP2264900B1 (en) * | 2009-06-17 | 2014-07-30 | Epcos AG | Low-current inverter circuit |
EP2264899B1 (en) * | 2009-06-17 | 2014-07-30 | Epcos AG | Low-current logic-gate circuit |
TWI671724B (en) | 2009-09-10 | 2019-09-11 | 日商半導體能源研究所股份有限公司 | Semiconductor device and display device |
CN102024410B (en) | 2009-09-16 | 2014-10-22 | 株式会社半导体能源研究所 | Semiconductor device and electronic appliance |
WO2011070929A1 (en) | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US8154322B2 (en) * | 2009-12-21 | 2012-04-10 | Analog Devices, Inc. | Apparatus and method for HDMI transmission |
JP5678730B2 (en) * | 2010-03-30 | 2015-03-04 | ソニー株式会社 | Inverter circuit and display device |
KR101674690B1 (en) * | 2010-03-30 | 2016-11-09 | 가부시키가이샤 제이올레드 | Inverter circuit and display |
JP5488817B2 (en) * | 2010-04-01 | 2014-05-14 | ソニー株式会社 | Inverter circuit and display device |
CN102859605A (en) * | 2010-04-28 | 2013-01-02 | 夏普株式会社 | Shift register and display device |
JP5581263B2 (en) | 2010-05-13 | 2014-08-27 | 株式会社半導体エネルギー研究所 | Buffer circuit |
KR101870605B1 (en) | 2010-05-21 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Pulse output circuit, shift register, and display device |
JP2012022168A (en) * | 2010-07-15 | 2012-02-02 | Sony Corp | Organic el display device, manufacturing method of organic el display device and electronic device |
JP5846789B2 (en) | 2010-07-29 | 2016-01-20 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US8941112B2 (en) | 2010-12-28 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5969216B2 (en) * | 2011-02-11 | 2016-08-17 | 株式会社半導体エネルギー研究所 | Light emitting element, display device, lighting device, and manufacturing method thereof |
US9466618B2 (en) | 2011-05-13 | 2016-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including two thin film transistors and method of manufacturing the same |
JP6099372B2 (en) * | 2011-12-05 | 2017-03-22 | 株式会社半導体エネルギー研究所 | Semiconductor device and electronic equipment |
JP2013130802A (en) | 2011-12-22 | 2013-07-04 | Semiconductor Energy Lab Co Ltd | Semiconductor device, image display device, storage device, and electronic apparatus |
US9036766B2 (en) | 2012-02-29 | 2015-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8994439B2 (en) | 2012-04-19 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, image display device, storage device, and electronic device |
US9742378B2 (en) | 2012-06-29 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit and semiconductor device |
US9171842B2 (en) | 2012-07-30 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Sequential circuit and semiconductor device |
JP2014179723A (en) * | 2013-03-14 | 2014-09-25 | Seiko Epson Corp | Level shift circuit, electro-optical device and electronic apparatus |
US9715940B2 (en) * | 2013-03-21 | 2017-07-25 | Sharp Kabushiki Kaisha | Shift register |
JP6475424B2 (en) | 2013-06-05 | 2019-02-27 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US9214475B2 (en) | 2013-07-09 | 2015-12-15 | Pixtronix, Inc. | All N-type transistor inverter circuit |
US20160240159A1 (en) * | 2013-10-08 | 2016-08-18 | Sharp Kabushiki Kaisha | Shift register and display device |
JP6053065B2 (en) * | 2015-04-03 | 2016-12-27 | 株式会社半導体エネルギー研究所 | Semiconductor device, display device, display module, and electronic apparatus |
CN206758439U (en) * | 2017-04-14 | 2017-12-15 | 京东方科技集团股份有限公司 | Display panel and display device |
JP6397964B2 (en) * | 2017-06-14 | 2018-09-26 | 株式会社半導体エネルギー研究所 | Shift register and semiconductor device |
JP6540868B2 (en) * | 2017-11-20 | 2019-07-10 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
CN108206002B (en) * | 2018-01-03 | 2022-01-11 | 京东方科技集团股份有限公司 | Grid driving circuit compensation device and method, grid driving circuit and display device |
US11626875B2 (en) * | 2018-04-20 | 2023-04-11 | Texas Instruments Incorporated | Stress reduction on stacked transistor circuits |
CN108538244B (en) * | 2018-04-20 | 2020-04-24 | 上海天马有机发光显示技术有限公司 | Shift register and driving method thereof, emission driving circuit and display device |
CN108877658B (en) * | 2018-07-27 | 2020-06-02 | 京东方科技集团股份有限公司 | Grid driving circuit and manufacturing method and driving method thereof |
JP7564092B2 (en) | 2019-03-29 | 2024-10-08 | 株式会社半導体エネルギー研究所 | Semiconductor Device |
Citations (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3506851A (en) | 1966-12-14 | 1970-04-14 | North American Rockwell | Field effect transistor driver using capacitor feedback |
US3774055A (en) | 1972-01-24 | 1973-11-20 | Nat Semiconductor Corp | Clocked bootstrap inverter circuit |
US3898479A (en) | 1973-03-01 | 1975-08-05 | Mostek Corp | Low power, high speed, high output voltage fet delay-inverter stage |
US4090096A (en) | 1976-03-31 | 1978-05-16 | Nippon Electric Co., Ltd. | Timing signal generator circuit |
JPS55156427A (en) | 1979-05-23 | 1980-12-05 | Sharp Corp | Bootstrap buffer circuit |
JPS5693431A (en) | 1979-12-27 | 1981-07-29 | Hitachi Ltd | Bootstrap output circuit |
EP0055136A2 (en) | 1980-12-24 | 1982-06-30 | Fujitsu Limited | A semiconductor buffer circuit |
JPS57132191A (en) | 1981-02-10 | 1982-08-16 | Suwa Seikosha Kk | Active matrix substrate |
US4390803A (en) | 1979-12-27 | 1983-06-28 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor driver circuit |
US4412139A (en) | 1980-07-16 | 1983-10-25 | Siemens Aktiengesellschaft | Integrated MOS driver stage with a large output signal ratio |
JPS5916424A (en) | 1982-07-19 | 1984-01-27 | Toshiba Corp | Semiconductor circuit |
JPS60140924A (en) | 1983-12-27 | 1985-07-25 | Nec Corp | Semiconductor circuit |
US4582395A (en) | 1980-07-31 | 1986-04-15 | Kabushiki Kaisha Suwa Seikosha | Active matrix assembly for a liquid crystal display device including an insulated-gate-transistor |
JPS63204815A (en) | 1987-02-20 | 1988-08-24 | Hitachi Ltd | Semiconductor logic circuit |
US4804870A (en) | 1987-08-07 | 1989-02-14 | Signetics Corporation | Non-inverting, low power, high speed bootstrapped buffer |
US4959697A (en) | 1988-07-20 | 1990-09-25 | Vtc Incorporated | Short channel junction field effect transistor |
JPH03165171A (en) | 1989-11-24 | 1991-07-17 | Ricoh Co Ltd | Close contact type image sensor |
JPH0698081A (en) | 1992-09-14 | 1994-04-08 | Hitachi Ltd | Solid-state image pickup element |
US5467038A (en) | 1994-02-15 | 1995-11-14 | Hewlett-Packard Company | Quick resolving latch |
JPH0851219A (en) | 1995-08-07 | 1996-02-20 | Seiko Epson Corp | Liquid crystal display and its manufacture |
US5548143A (en) | 1993-04-29 | 1996-08-20 | Samsung Electronics Co., Ltd. | Metal oxide semiconductor transistor and a method for manufacturing the same |
JPH0946216A (en) | 1995-07-28 | 1997-02-14 | Casio Comput Co Ltd | Semiconductor device |
US5643826A (en) | 1993-10-29 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
JPH09186312A (en) | 1996-01-08 | 1997-07-15 | Sharp Corp | Device for display and image pickup |
JPH09246936A (en) | 1995-03-27 | 1997-09-19 | Casio Comput Co Ltd | Semiconductor device and display driving device using the same |
US5694061A (en) | 1995-03-27 | 1997-12-02 | Casio Computer Co., Ltd. | Semiconductor device having same conductive type MIS transistors, a simple circuit design, and a high productivity |
US5870071A (en) | 1995-09-07 | 1999-02-09 | Frontec Incorporated | LCD gate line drive circuit |
US5889291A (en) | 1994-04-22 | 1999-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit |
US5949271A (en) | 1996-10-07 | 1999-09-07 | Nec Corporation | Bootstrap circuit suitable for buffer circuit or shift register circuit |
US5949398A (en) | 1996-04-12 | 1999-09-07 | Thomson Multimedia S.A. | Select line driver for a display matrix with toggling backplane |
US5952991A (en) | 1996-11-14 | 1999-09-14 | Kabushiki Kaisha Toshiba | Liquid crystal display |
US6049228A (en) | 1996-12-14 | 2000-04-11 | Samsung Electronics, Co., Ltd. | Level shifter for a liquid crystal display |
JP2000106617A (en) | 1998-09-29 | 2000-04-11 | Canon Inc | Reader and reading system |
US6091393A (en) | 1997-01-08 | 2000-07-18 | Lg Electronics Inc. | Scan driver IC for a liquid crystal display |
EP1063630A2 (en) | 1999-06-23 | 2000-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix EL display device |
JP2001109394A (en) | 1999-07-23 | 2001-04-20 | Semiconductor Energy Lab Co Ltd | Display device integrated with image recognition device |
JP2001133431A (en) | 1999-10-29 | 2001-05-18 | Ngk Spark Plug Co Ltd | Gas sensor |
US20010002703A1 (en) | 1999-11-30 | 2001-06-07 | Jun Koyama | Electric device |
EP1139326A2 (en) | 2000-03-28 | 2001-10-04 | SANYO ELECTRIC Co., Ltd. | Active matrix electroluminescent display device |
US20010045565A1 (en) | 2000-05-05 | 2001-11-29 | Shunpei Yamazaki | Light emitting device |
US20020044208A1 (en) | 2000-08-10 | 2002-04-18 | Shunpei Yamazaki | Area sensor and display apparatus provided with an area sensor |
US6384804B1 (en) | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
JP2002176162A (en) | 2000-08-10 | 2002-06-21 | Semiconductor Energy Lab Co Ltd | Area sensor and display device provided with area sensor |
US20020089496A1 (en) | 2001-01-10 | 2002-07-11 | Takaji Numao | Display device |
US20020097212A1 (en) | 2000-11-22 | 2002-07-25 | Toshio Miyazawa | Display device having an improved voltage level converter circuit |
JP2002251164A (en) | 2000-09-14 | 2002-09-06 | Semiconductor Energy Lab Co Ltd | Area sensor and display device |
US20020158666A1 (en) | 2001-04-27 | 2002-10-31 | Munehiro Azami | Semiconductor device |
US20020167026A1 (en) | 2001-05-11 | 2002-11-14 | Munehiro Azami | Pulse output circuit, shift register and display device |
US20020190326A1 (en) | 2001-05-29 | 2002-12-19 | Shou Nagao | Pulse output circuit, shift register, and display device |
US6501098B2 (en) | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
US20030011584A1 (en) | 2001-07-16 | 2003-01-16 | Munehiro Azami | Light emitting device |
US20030020520A1 (en) | 2001-07-30 | 2003-01-30 | Hiroyuki Miyake | Semiconductor device |
US6522323B1 (en) | 1999-03-30 | 2003-02-18 | Sharp Kabushiki Kaisha | Level shift circuit and image display device |
US20030034806A1 (en) | 2001-08-03 | 2003-02-20 | Munehiro Azami | Semiconductor device and display device |
US20030052324A1 (en) | 2001-08-09 | 2003-03-20 | Hajime Kimura | Semiconductor device |
US6542138B1 (en) | 1999-09-11 | 2003-04-01 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display device |
US20030111677A1 (en) | 2001-11-30 | 2003-06-19 | Hiroyuki Miyake | Semiconductor device |
US6813332B2 (en) | 2003-01-17 | 2004-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, shift register and electronic equipment |
US20040252111A1 (en) | 2003-06-10 | 2004-12-16 | Man-Bok Cheon | Image data compensation device and method and display system employing the same |
US20040257353A1 (en) | 2003-05-19 | 2004-12-23 | Seiko Epson Corporation | Electro-optical device and driving device thereof |
US7307463B2 (en) | 2003-04-09 | 2007-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Source follower, voltage follower, and semiconductor device |
US7847593B2 (en) * | 2005-12-28 | 2010-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3291274B2 (en) | 1999-09-10 | 2002-06-10 | 株式会社半導体エネルギー研究所 | Carbon coating method |
JP2001106617A (en) | 1999-10-04 | 2001-04-17 | Kansai Koso Kk | Skin protecting cosmetic |
-
2002
- 2002-07-26 US US10/202,861 patent/US6788108B2/en not_active Ceased
- 2002-07-30 JP JP2002221125A patent/JP3590398B2/en not_active Expired - Lifetime
-
2004
- 2004-07-29 US US10/901,127 patent/US7091749B2/en not_active Expired - Lifetime
-
2006
- 2006-07-11 US US11/484,030 patent/USRE41215E1/en not_active Expired - Lifetime
- 2006-08-09 US US11/463,356 patent/US7362139B2/en not_active Ceased
-
2009
- 2009-02-12 US US12/369,914 patent/USRE43401E1/en not_active Expired - Lifetime
-
2012
- 2012-05-15 US US13/471,870 patent/USRE44657E1/en not_active Expired - Lifetime
Patent Citations (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3506851A (en) | 1966-12-14 | 1970-04-14 | North American Rockwell | Field effect transistor driver using capacitor feedback |
US3774055A (en) | 1972-01-24 | 1973-11-20 | Nat Semiconductor Corp | Clocked bootstrap inverter circuit |
US3898479A (en) | 1973-03-01 | 1975-08-05 | Mostek Corp | Low power, high speed, high output voltage fet delay-inverter stage |
US4090096A (en) | 1976-03-31 | 1978-05-16 | Nippon Electric Co., Ltd. | Timing signal generator circuit |
JPS55156427A (en) | 1979-05-23 | 1980-12-05 | Sharp Corp | Bootstrap buffer circuit |
US4390803A (en) | 1979-12-27 | 1983-06-28 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor driver circuit |
JPS5693431A (en) | 1979-12-27 | 1981-07-29 | Hitachi Ltd | Bootstrap output circuit |
US4412139A (en) | 1980-07-16 | 1983-10-25 | Siemens Aktiengesellschaft | Integrated MOS driver stage with a large output signal ratio |
US4582395A (en) | 1980-07-31 | 1986-04-15 | Kabushiki Kaisha Suwa Seikosha | Active matrix assembly for a liquid crystal display device including an insulated-gate-transistor |
US4443714A (en) | 1980-12-24 | 1984-04-17 | Fujitsu Limited | Semiconductor buffer circuit having compensation for power source fluctuation |
JPS57106228A (en) | 1980-12-24 | 1982-07-02 | Fujitsu Ltd | Semiconductor circuit |
EP0055136A2 (en) | 1980-12-24 | 1982-06-30 | Fujitsu Limited | A semiconductor buffer circuit |
JPS57132191A (en) | 1981-02-10 | 1982-08-16 | Suwa Seikosha Kk | Active matrix substrate |
JPS5916424A (en) | 1982-07-19 | 1984-01-27 | Toshiba Corp | Semiconductor circuit |
JPS60140924A (en) | 1983-12-27 | 1985-07-25 | Nec Corp | Semiconductor circuit |
US4633105A (en) | 1983-12-27 | 1986-12-30 | Nec Corporation | Bootstrap type output circuit |
JPS63204815A (en) | 1987-02-20 | 1988-08-24 | Hitachi Ltd | Semiconductor logic circuit |
US4804870A (en) | 1987-08-07 | 1989-02-14 | Signetics Corporation | Non-inverting, low power, high speed bootstrapped buffer |
US4959697A (en) | 1988-07-20 | 1990-09-25 | Vtc Incorporated | Short channel junction field effect transistor |
JPH03165171A (en) | 1989-11-24 | 1991-07-17 | Ricoh Co Ltd | Close contact type image sensor |
JPH0698081A (en) | 1992-09-14 | 1994-04-08 | Hitachi Ltd | Solid-state image pickup element |
US5548143A (en) | 1993-04-29 | 1996-08-20 | Samsung Electronics Co., Ltd. | Metal oxide semiconductor transistor and a method for manufacturing the same |
US5643826A (en) | 1993-10-29 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
US5467038A (en) | 1994-02-15 | 1995-11-14 | Hewlett-Packard Company | Quick resolving latch |
US5889291A (en) | 1994-04-22 | 1999-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit |
JPH09246936A (en) | 1995-03-27 | 1997-09-19 | Casio Comput Co Ltd | Semiconductor device and display driving device using the same |
US5694061A (en) | 1995-03-27 | 1997-12-02 | Casio Computer Co., Ltd. | Semiconductor device having same conductive type MIS transistors, a simple circuit design, and a high productivity |
JPH0946216A (en) | 1995-07-28 | 1997-02-14 | Casio Comput Co Ltd | Semiconductor device |
JPH0851219A (en) | 1995-08-07 | 1996-02-20 | Seiko Epson Corp | Liquid crystal display and its manufacture |
US5870071A (en) | 1995-09-07 | 1999-02-09 | Frontec Incorporated | LCD gate line drive circuit |
JPH09186312A (en) | 1996-01-08 | 1997-07-15 | Sharp Corp | Device for display and image pickup |
US6040810A (en) | 1996-01-08 | 2000-03-21 | Sharp Kabushiki Kaisha | Display device having display and imaging pixels sandwiched between same substrates |
US5949398A (en) | 1996-04-12 | 1999-09-07 | Thomson Multimedia S.A. | Select line driver for a display matrix with toggling backplane |
US5949271A (en) | 1996-10-07 | 1999-09-07 | Nec Corporation | Bootstrap circuit suitable for buffer circuit or shift register circuit |
US5952991A (en) | 1996-11-14 | 1999-09-14 | Kabushiki Kaisha Toshiba | Liquid crystal display |
US6049228A (en) | 1996-12-14 | 2000-04-11 | Samsung Electronics, Co., Ltd. | Level shifter for a liquid crystal display |
US6091393A (en) | 1997-01-08 | 2000-07-18 | Lg Electronics Inc. | Scan driver IC for a liquid crystal display |
JP2000106617A (en) | 1998-09-29 | 2000-04-11 | Canon Inc | Reader and reading system |
US6384804B1 (en) | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
US6501098B2 (en) | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
US6522323B1 (en) | 1999-03-30 | 2003-02-18 | Sharp Kabushiki Kaisha | Level shift circuit and image display device |
EP1063630A2 (en) | 1999-06-23 | 2000-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix EL display device |
JP2001005426A (en) | 1999-06-23 | 2001-01-12 | Semiconductor Energy Lab Co Ltd | El display device and electronic device |
JP2001109394A (en) | 1999-07-23 | 2001-04-20 | Semiconductor Energy Lab Co Ltd | Display device integrated with image recognition device |
US6542138B1 (en) | 1999-09-11 | 2003-04-01 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display device |
JP2001133431A (en) | 1999-10-29 | 2001-05-18 | Ngk Spark Plug Co Ltd | Gas sensor |
US20010002703A1 (en) | 1999-11-30 | 2001-06-07 | Jun Koyama | Electric device |
US20020011973A1 (en) | 2000-03-28 | 2002-01-31 | Naoaki Komiya | Display device |
EP1139326A2 (en) | 2000-03-28 | 2001-10-04 | SANYO ELECTRIC Co., Ltd. | Active matrix electroluminescent display device |
US20010045565A1 (en) | 2000-05-05 | 2001-11-29 | Shunpei Yamazaki | Light emitting device |
JP2002176162A (en) | 2000-08-10 | 2002-06-21 | Semiconductor Energy Lab Co Ltd | Area sensor and display device provided with area sensor |
US20020044208A1 (en) | 2000-08-10 | 2002-04-18 | Shunpei Yamazaki | Area sensor and display apparatus provided with an area sensor |
JP2002251164A (en) | 2000-09-14 | 2002-09-06 | Semiconductor Energy Lab Co Ltd | Area sensor and display device |
US20020097212A1 (en) | 2000-11-22 | 2002-07-25 | Toshio Miyazawa | Display device having an improved voltage level converter circuit |
US6686899B2 (en) | 2000-11-22 | 2004-02-03 | Hitachi, Ltd. | Display device having an improved voltage level converter circuit |
US20020089496A1 (en) | 2001-01-10 | 2002-07-11 | Takaji Numao | Display device |
US20020158666A1 (en) | 2001-04-27 | 2002-10-31 | Munehiro Azami | Semiconductor device |
US20020167026A1 (en) | 2001-05-11 | 2002-11-14 | Munehiro Azami | Pulse output circuit, shift register and display device |
US20020190326A1 (en) | 2001-05-29 | 2002-12-19 | Shou Nagao | Pulse output circuit, shift register, and display device |
US20030011584A1 (en) | 2001-07-16 | 2003-01-16 | Munehiro Azami | Light emitting device |
US20030020520A1 (en) | 2001-07-30 | 2003-01-30 | Hiroyuki Miyake | Semiconductor device |
USRE41215E1 (en) * | 2001-07-30 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7091749B2 (en) | 2001-07-30 | 2006-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6788108B2 (en) | 2001-07-30 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20030034806A1 (en) | 2001-08-03 | 2003-02-20 | Munehiro Azami | Semiconductor device and display device |
US20030052324A1 (en) | 2001-08-09 | 2003-03-20 | Hajime Kimura | Semiconductor device |
US20030111677A1 (en) | 2001-11-30 | 2003-06-19 | Hiroyuki Miyake | Semiconductor device |
US6813332B2 (en) | 2003-01-17 | 2004-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, shift register and electronic equipment |
US7307463B2 (en) | 2003-04-09 | 2007-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Source follower, voltage follower, and semiconductor device |
US20040257353A1 (en) | 2003-05-19 | 2004-12-23 | Seiko Epson Corporation | Electro-optical device and driving device thereof |
US20040252111A1 (en) | 2003-06-10 | 2004-12-16 | Man-Bok Cheon | Image data compensation device and method and display system employing the same |
US7847593B2 (en) * | 2005-12-28 | 2010-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
Non-Patent Citations (4)
Title |
---|
Foreign Communication in Singapore Application No. 200202969-2 dated Jun. 25, 2004 along with Australian Search Report dated Apr. 27, 2004 (8 pages). |
Japan Office Action (Application No. 2002-221125) mailed Jun. 8, 2004 and full English language translation, 6 pages. |
Munehiro Azami et al.; U.S. Appl. No. 10/127,600; Office Action dated Oct. 22, 2004. |
US 6,646,476, Nov. 2003, Nagao (withdrawn). |
Cited By (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8743030B2 (en) | 2005-09-16 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of display device |
US20100245219A1 (en) * | 2005-09-16 | 2010-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of display device |
US9984640B2 (en) * | 2005-12-28 | 2018-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic device |
US20160322014A1 (en) * | 2005-12-28 | 2016-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device, Display Device And Electronic Device |
US10088725B2 (en) | 2006-08-31 | 2018-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US20110187694A1 (en) * | 2006-08-31 | 2011-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US11971638B2 (en) | 2006-08-31 | 2024-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US8462100B2 (en) | 2006-08-31 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US11194203B2 (en) | 2006-08-31 | 2021-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US9184183B2 (en) | 2006-08-31 | 2015-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US9335599B2 (en) | 2006-08-31 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US10606140B2 (en) | 2006-08-31 | 2020-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US8456396B2 (en) | 2006-08-31 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US10401699B2 (en) | 2006-08-31 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US9684215B2 (en) | 2006-08-31 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US8643586B2 (en) | 2006-08-31 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US10134775B2 (en) | 2006-09-29 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US10685987B2 (en) | 2006-09-29 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US12148761B2 (en) | 2006-09-29 | 2024-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US10978497B2 (en) | 2006-09-29 | 2021-04-13 | Seminconductor Energy Laboratory Co., Ltd. | Display device |
US10062716B2 (en) | 2006-09-29 | 2018-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9583513B2 (en) | 2006-09-29 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US10553618B2 (en) | 2006-09-29 | 2020-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US8743095B2 (en) * | 2009-09-30 | 2014-06-03 | Sharp Kabushiki Kaisha | Electronic apparatus and display panel |
US20120169681A1 (en) * | 2009-09-30 | 2012-07-05 | Sharp Kabushiki Kaisha | Electronic apparatus and display panel |
US11257853B2 (en) | 2011-09-30 | 2022-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10916571B2 (en) | 2011-09-30 | 2021-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9806107B2 (en) | 2011-09-30 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10497723B2 (en) | 2011-09-30 | 2019-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11557613B2 (en) | 2011-09-30 | 2023-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11901377B2 (en) | 2011-09-30 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10304872B2 (en) | 2011-09-30 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9432016B2 (en) | 2011-09-30 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9058889B2 (en) | 2012-07-20 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, display device, and electronic device |
US11276711B2 (en) | 2016-11-29 | 2022-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
US12040795B2 (en) | 2018-12-20 | 2024-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit formed using unipolar transistor, and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
USRE41215E1 (en) | 2010-04-13 |
US7091749B2 (en) | 2006-08-15 |
US20060290380A1 (en) | 2006-12-28 |
US7362139B2 (en) | 2008-04-22 |
US20030020520A1 (en) | 2003-01-30 |
US20050051802A1 (en) | 2005-03-10 |
JP2003179479A (en) | 2003-06-27 |
JP3590398B2 (en) | 2004-11-17 |
US6788108B2 (en) | 2004-09-07 |
USRE44657E1 (en) | 2013-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
USRE43401E1 (en) | Semiconductor device | |
US7068076B2 (en) | Semiconductor device and display device | |
US9893094B2 (en) | Semiconductor device | |
US6756816B2 (en) | Semiconductor device | |
US6731273B2 (en) | Level shifter | |
JP4083493B2 (en) | Display device and electronic apparatus including the display device | |
JP2004064528A6 (en) | Semiconductor device | |
JP5864071B2 (en) | Semiconductor device and display device | |
JP2013229902A (en) | Semiconductor device | |
JP2014222892A (en) | Semiconductor device, display device, and electronic apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
CC | Certificate of correction | ||
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 12 |