US4677323A - Field-effect transistor current switching circuit - Google Patents
Field-effect transistor current switching circuit Download PDFInfo
- Publication number
- US4677323A US4677323A US06/757,335 US75733585A US4677323A US 4677323 A US4677323 A US 4677323A US 75733585 A US75733585 A US 75733585A US 4677323 A US4677323 A US 4677323A
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- Prior art keywords
- transistor
- conduction channel
- current
- node
- output
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- Expired - Fee Related
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
Definitions
- the current switching arrangement in accordance with the present invention is a current mirror configuration having an input branch and an output branch.
- the current is switched by controlling the conduction path between a supply voltage node and one side of the conduction channel of an output transistor in the output branch. This arrangement reduces both the time constants of the switching nodes in the circuit and the parasitic coupling of switching transients to the output current.
- FIG. 1 of the drawings is a schematic circuit diagram of a current switching circuit in accordance with one example of the present invention.
- FIG. 2 is a schematic circuit diagram of a current switching circuit in accordance with another example of the present invention, in which the circuit of FIG. 1 is modified for higher precision in its output.
- FIG. 3 is a schematic circuit diagram of a current switching circuit in accordance with a third example of the present invention, in which the circuit of FIG. 1 is modified to have additional output branches for digital-to-analog conversion purposes.
- the circuit 10 also has an output current branch 16 which is made up of a switching transistor M2 and an output transistor M4 connected in series, respectively, between the positive supply voltage node V+ and an output current node D.
- the gate electrode of the output transistor M4 is connected to the gate of the input transistor M3 to establish currents in the input and output branches 12, 16 which are proportional to the relative conduction channel width-to-length dimensions of the respective transistors M1,M2, and the respective transistors M3,M4.
- the transistors M1,M2,M3, and M4 may be considered to all be identical.
- the gate electrode of M2 is taken as the control electrode 18 for switching the current I o in the output branch 16 on and off. In most applications of the circuit 10, the current I o at the output current node D would be used to drive a load, which is not shown.
- the circuit 10 is capable of switching current very fast, while permitting very little coupling of switching transients to the output node D.
- the speed capability results from the fact that the nodes B and C are not required to change voltage very much in the course of the switching.
- the node B has a relatively large parasitic capacitance, but does not change its voltage.
- the node C is required to make relatively small voltage level excursions, from that of B minus a threshold voltage of M4 to near the positive supply voltage V+, and the transistor M2 may be made large to provide high switching speed and low resistance for supplying the needed current to the node C at the required speed without the introduction of undesirable side effects. Since the current which is switched by M2 to low impedance node C comes directly from the voltage supply node 16, the time constant of the charging of node C can be readily kept sufficiently low for most purposes by appropriate choice of the size of M2.
- additional circuitry such as cascoded configurations may be provided.
- An example of such an arrangement is the modified circuit 20 shown in FIG. 2. Elements of the circuit 20 of FIG. 2 which correspond to those of the circuit 10 of FIG. 1 are designated by the same reference symbols.
- the circuit 20 is similar to the circuit 10 of FIG. 1, but has added to it the transistors M5 and M6.
- the device M5 is a cascoded input transistor.
- the device M6 is a cascoded output transistor.
- the effect of the additional current mirror stage formed by the cascoded transistors M5 and M6 is to make the voltages at nodes B' and D' substantially equal to each other.
- circuit 22 of FIG. 3 is designed for digital-to-analog conversion functions. Again, elements which correspond to those of the circuit 10 of FIG. 1 are assigned similar reference symbols. It is seen that the circuit 22 is similar to the circuit 10, but has additional output branches 24,26,28 connected in parallel with the branch 16 and with each other to a common output.
- the output branches have respective switching transistors M2 3 , M2 2 , M2 1 , and M2 0 connected between the positive supply voltage node V+ and one side of the conduction channel of the respective output transistors M4 3 , M4 2 , M4 1 , and M4 0 .
- the switching transistors M2 3 , M2 2 , M2 1 , and M2 0 are operated by a train of switching voltages V s .sbsb.3, V s .sbsb.2, V s .sbsb.1, and V s .sbsb.0.
- the respective transistors of the output branches 24,26, and 28 have their conduction channel width-to-length ratios progressively scaled with respect to each other by a scaling factor of 2.
- the summed output current I o at the node D is may be used for analog signal reconstruction. There may be as many output branches as desired for a particular application.
- the control voltage V c to which the gate of the input branch current-limiting transistor M1 is connected may be any reference voltage node suitable for putting the transistor M1 into the triode mode for its function.
- a reference voltage is understood to be a voltage which is substantially constant in relation to the signal in the circuit.
- the current source 14 would generally be used to determine the current in the input branch 12.
- the switching voltage node 18 may switch between various voltages which are effective to turn the transistor M2 ON and OFF, but it is preferable that the switching voltages be the control voltage V c and the positive supply voltage V+ in order to minimize the introduction of other effects in the circuit 10 which are likely to degrade its performance somewhat.
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- Analogue/Digital Conversion (AREA)
- Electronic Switches (AREA)
Abstract
An MOS current steering circuit (10) includes a current mirror arrangement with an input branch (12) and an output branch (16). In the input branch, the conduction channels of a current-limiting transistor (M1) and a current mirror input transistor (M3) are connected in series with each other between a first power supply voltage node V+ and one side of a current source (14). The other side of the current source and the gate of the current-limiting transistor are connected to another supply voltage node (V-). In the output branch, a current mirror output transistor (M4) has one side of its conduction channel connected as a current output node (D). The gates of the input and output transistors are connected together and to the common node (A) of the input transistor and the current source. A control transistor (M2) has its conduction channel connected between the other side of the output transistor and the first voltage supply node. The control transistor switches the output transistor by controlling the output transistor's gate-to-source voltage. Also disclosed are modified versions which include a circuit (20) designed for greater accuracy in the output and a circuit (22) designed for digital-to-analog conversion functions.
Description
The present invention relates generally to electronic switching circuits and more particularly to current switching integrated circuits which selectively enable current flow in response to a signal voltage.
Current switching circuits selectively enable current flow in response to a control signal voltage. Some circuits, for example digital-to-analog converters and voltage controlled oscillators, require highly accurate current switching circuits for their input. A number of different current switching circuits are known, both for field-effect and for bipolar transistor implementations. Those which are designed for field-effect transistor implementation typically have their switching speed limited by the time constants of various internal nodes due to the required charging time for parasitic capacitances. Moreover, these time constants are likely to change significantly with process variations from one wafer to the next in manufacture, thus making it difficult to control the operating parameters of the circuit. Another problem with field-effect transistor circuits is the coupling of switching transients to the output through parasitic capacitances of the transistors. Efforts to avoid these shortcomings usually involve the provision of additional devices in a cascode configuration to provide some isolation from the undesired effects. However, such measures make the resulting circuits more complex and costly.
The current switching arrangement in accordance with the present invention is a current mirror configuration having an input branch and an output branch. The current is switched by controlling the conduction path between a supply voltage node and one side of the conduction channel of an output transistor in the output branch. This arrangement reduces both the time constants of the switching nodes in the circuit and the parasitic coupling of switching transients to the output current.
FIG. 1 of the drawings is a schematic circuit diagram of a current switching circuit in accordance with one example of the present invention.
FIG. 2 is a schematic circuit diagram of a current switching circuit in accordance with another example of the present invention, in which the circuit of FIG. 1 is modified for higher precision in its output.
FIG. 3 is a schematic circuit diagram of a current switching circuit in accordance with a third example of the present invention, in which the circuit of FIG. 1 is modified to have additional output branches for digital-to-analog conversion purposes.
The current switching circuit 10 of FIG. 1 is one example of an implementation of the invention. All the transistors in the circuit are three-terminal P-type conduction channel field-effect devices of the enhancement mode type with their bulk connected to a suitable positive voltage, such as a supply voltage node. In the interest of minimizing the complexity of the drawing, the bulk connections, which would be readily apparent to those skilled in the art, are not shown. The circuit 10 has an input current branch 12 made up of a triode-connected current-limiting transistor M1, an input transistor M3, and a current source 14 connected in series, respectively, between a positive supply voltage node V+ and a negative supply voltage node V-. The gate electrode of the current-limiting transistor M1 is connected to a suitable control voltage node Vc. The input transistor M3 has its gate electrode connected to its drain.
The circuit 10 also has an output current branch 16 which is made up of a switching transistor M2 and an output transistor M4 connected in series, respectively, between the positive supply voltage node V+ and an output current node D. The gate electrode of the output transistor M4 is connected to the gate of the input transistor M3 to establish currents in the input and output branches 12, 16 which are proportional to the relative conduction channel width-to-length dimensions of the respective transistors M1,M2, and the respective transistors M3,M4. For the present example, the transistors M1,M2,M3, and M4 may be considered to all be identical. The gate electrode of M2 is taken as the control electrode 18 for switching the current Io in the output branch 16 on and off. In most applications of the circuit 10, the current Io at the output current node D would be used to drive a load, which is not shown.
In considering the operation of the circuit 10, it is useful to begin with the assumption that the control voltage Vc, which is a reference voltage chosen to put the transistor M1 into a triode mode of operation, is for convenience taken as the same voltage as the negative supply voltage V-. It is also assumed that the voltage Vs applied to the gate electrode of M2 is equal to Vc. This is the current ON condition. The nodes A and C are at the same voltage. The current Ii in the input branch 12 is determined by the current source 14. The current Io in the output branch 16 is proportional to that in the input branch 12 in accordance with the dimensional proportionalities of the respective transistors M1,M2; M3,M4 of the input and output branches 12,16. Since the proportionality is unity in this particular example, Ii =Io. If Vs is now made equal to the positive supply voltage V+, then the current-limiting transistor M2 is turned OFF and the output current Io drops to zero. This leaves the node C at a voltage equal to the voltage of node B minus a threshold voltage of the output transistor M4. When Vs is again switched to the V- voltage, M2 is turned on and begins to conduct current. This occurs because node C is pulled positive to turn M4 on.
The circuit 10 is capable of switching current very fast, while permitting very little coupling of switching transients to the output node D. The speed capability results from the fact that the nodes B and C are not required to change voltage very much in the course of the switching. The node B has a relatively large parasitic capacitance, but does not change its voltage. The node C is required to make relatively small voltage level excursions, from that of B minus a threshold voltage of M4 to near the positive supply voltage V+, and the transistor M2 may be made large to provide high switching speed and low resistance for supplying the needed current to the node C at the required speed without the introduction of undesirable side effects. Since the current which is switched by M2 to low impedance node C comes directly from the voltage supply node 16, the time constant of the charging of node C can be readily kept sufficiently low for most purposes by appropriate choice of the size of M2.
There is very little coupling of switching transients of the circuit 10 to the output node D, since the coupling of the transients from the control electrode of M2 is primarily to the low impedance node C, from which very little can find its way to the high impedance output node D. Moreover, coupling to the output node D can be further reduced as desired by additional circuitry as will be discussed below.
For implementations where it is important that the voltages at nodes B and D are equal, which would be desirable for a particularly precise current mirror, additional circuitry such as cascoded configurations may be provided. An example of such an arrangement is the modified circuit 20 shown in FIG. 2. Elements of the circuit 20 of FIG. 2 which correspond to those of the circuit 10 of FIG. 1 are designated by the same reference symbols. The circuit 20 is similar to the circuit 10 of FIG. 1, but has added to it the transistors M5 and M6. The device M5 is a cascoded input transistor. The device M6 is a cascoded output transistor. The effect of the additional current mirror stage formed by the cascoded transistors M5 and M6 is to make the voltages at nodes B' and D' substantially equal to each other. This improves the precision of the output current Io by insuring that the drain-to-source voltages of M5 and M6 are equal and by further reducing the coupling of any transients which might appear in the current at the common node of M6 and M2 from appearing in the output current Io at node D.
Another example of an implementation of the invention is the circuit 22 of FIG. 3, which is designed for digital-to-analog conversion functions. Again, elements which correspond to those of the circuit 10 of FIG. 1 are assigned similar reference symbols. It is seen that the circuit 22 is similar to the circuit 10, but has additional output branches 24,26,28 connected in parallel with the branch 16 and with each other to a common output. The output branches have respective switching transistors M23, M22, M21, and M20 connected between the positive supply voltage node V+ and one side of the conduction channel of the respective output transistors M43, M42, M41, and M40. The switching transistors M23, M22, M21, and M20 are operated by a train of switching voltages Vs.sbsb.3, Vs.sbsb.2, Vs.sbsb.1, and Vs.sbsb.0. The respective transistors of the output branches 24,26, and 28 have their conduction channel width-to-length ratios progressively scaled with respect to each other by a scaling factor of 2. Thus, the width-to-length ratios W/L of the switching transistors are given as M23 =8, M22 =4, M21 =2, and M20 =1. and those of the output transistors are given as M43 =8, M42 =4, M41 =2, M40 =1. The summed output current Io at the node D is may be used for analog signal reconstruction. There may be as many output branches as desired for a particular application.
While the above circuits use P channel devices of the enhancement mode type, it would be readily apparent to those skilled in the art to implement the invention with either N channel or P channel devices.
The control voltage Vc to which the gate of the input branch current-limiting transistor M1 is connected may be any reference voltage node suitable for putting the transistor M1 into the triode mode for its function. A reference voltage is understood to be a voltage which is substantially constant in relation to the signal in the circuit. The current source 14 would generally be used to determine the current in the input branch 12.
The switching voltage node 18 may switch between various voltages which are effective to turn the transistor M2 ON and OFF, but it is preferable that the switching voltages be the control voltage Vc and the positive supply voltage V+ in order to minimize the introduction of other effects in the circuit 10 which are likely to degrade its performance somewhat.
Claims (4)
1. A current switching circuit, comprising:
a first field-effect transistor having one side of its conduction channel connected to a first voltage supply node and its control electrode connected to a control voltage node;
a second field-effect transistor having one side of its conduction channel connected to said first voltage supply node and its control electrode connected to a switching voltage node;
a third field-effect transistor having one side of its conduction channel connected to the other side of the conduction channel of said first transistor;
a fourth field-effect transistor having one side of its conduction channel connected to the other side of the conduction channel of said second transistor, the control electrodes of said third and fourth transistors being connected together and to the other side of the conduction channel of said third transistor, the other side of the conduction channel of said fourth transistor forming a current output node, and
current source means for establishing a predetermined current in the conduction channels of said first and third transistors,
said first and third transistors and said current source means forming an input current branch and said second and fourth transistors forming an output current branch.
2. The circuit as defined in claim 1, wherein said current source means comprises a current source having one side connected to the other side of said third transistor and having its other side connected to a second supply voltage node and to the control electrode of said first transistor.
3. A current switching circuit, comprising:
a first field-effect transistor having one side of its conduction channel connected to a first voltage supply node and its control electrode connected to a control voltage node;
a second field-effect transistor having one side of its conduction channel connected to said first voltage supply node and its control electrode connected to a switching voltage node;
a third field-effect transistor having one side of its conduction channel connected to the other side of the conduction channel of said first transistor;
a fourth field-effect transistor having one side of its conduction channel connected to the other side of the conduction channel of said second transistor, the control electrodes of said third and fourth transistors being connected together and to the other side of the conduction channel of said third transistor,
a fifth field-effect transistor having one side of its conduction channel connected to the other side of the conduction channel of said third transistor;
a sixth field-effect transistor having one side of its conduction channel connected to the other side of the conduction channel of said fourth transistor, the control electrode of said sixth transistor being connected to the control electrode and the other side of the conduction channel of said fifth transistor, the other side of the conduction channel of said sixth transistor forming a current output node and
a current source means for establishing a predetermined current in the conduction channels of said first, third, and fifth transistors.
4. A current switching circuit, comprising:
a first field-effect transistor having one side of its conduction channel connected to a first voltage supply node and its control electrode connected to a control voltage node;
a second field-effect transistor having one side of its conduction channel connected to said first voltage supply node and its control electrode connected to a switching voltage node;
a third field-effect transistor having one side of its conduction channel connected to the other side of the conduction channel of said first transistor;
a fourth field-effect transistor having one side of its conduction channel connected to the other side of the conduction channel of said second transistor, the control electrodes of said third and fourth transistors being connected together and to the second side of the conduction channel of said third transistor, the other side of the conduction channel of said fourth transistor forming a current output node;
at least one pair of additional transistors connected in series with each other between the one side of the conduction channel of said second transistor and the other side of the conduction channel of said fourth transistor to form an additional output branch, the control electrode of one transistor of said additional pair being connected to the control electrode of said fourth transistor, and the control electrode of the other transistor of said additional pair forming an additional control voltage node, and
current source means for establishing a predetermined current in the conduction channels of said first and third transistors,
said first and third transistors and said current source forming an input current branch, said second and fourth transistors forming a output current branch, and said additional pair of transistors forming a second output current branch.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/757,335 US4677323A (en) | 1985-07-22 | 1985-07-22 | Field-effect transistor current switching circuit |
EP86305375A EP0212833A1 (en) | 1985-07-22 | 1986-07-14 | Field-effect transistor current switching circuit |
CA000514274A CA1238692A (en) | 1985-07-22 | 1986-07-21 | Field-effect transistor current switching circuit |
JP61170950A JPS6225510A (en) | 1985-07-22 | 1986-07-22 | Current switching circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/757,335 US4677323A (en) | 1985-07-22 | 1985-07-22 | Field-effect transistor current switching circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
US4677323A true US4677323A (en) | 1987-06-30 |
Family
ID=25047406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US06/757,335 Expired - Fee Related US4677323A (en) | 1985-07-22 | 1985-07-22 | Field-effect transistor current switching circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US4677323A (en) |
EP (1) | EP0212833A1 (en) |
JP (1) | JPS6225510A (en) |
CA (1) | CA1238692A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3913446A1 (en) * | 1988-09-02 | 1990-03-15 | Siemens Ag | POWER MIRROR |
DE4201155C1 (en) * | 1992-01-17 | 1993-01-28 | Texas Instruments Deutschland Gmbh, 8050 Freising, De | |
US5396133A (en) * | 1993-10-01 | 1995-03-07 | Cirrus Logic, Inc. | High speed CMOS current switching circuits |
WO1995020266A1 (en) * | 1994-01-24 | 1995-07-27 | Arithmos, Inc. | High voltage electronic amplifiers |
US5491531A (en) * | 1993-04-28 | 1996-02-13 | Allen-Bradley Company, Inc. | Media access controller with a shared class message delivery capability |
US5495155A (en) * | 1991-06-28 | 1996-02-27 | United Technologies Corporation | Device in a power delivery circuit |
US5646520A (en) * | 1994-06-28 | 1997-07-08 | National Semiconductor Corporation | Methods and apparatus for sensing currents |
US5767736A (en) * | 1995-11-27 | 1998-06-16 | Lucent Technologies Inc. | Charge pump having high switching speed and low switching noise |
US5939908A (en) * | 1996-06-27 | 1999-08-17 | Kelsey-Hayes Company | Dual FET driver circuit |
US6509855B1 (en) * | 2000-06-28 | 2003-01-21 | Intel Corporation | Digital-to-analog cell having reduced power consumption and method therefor |
US20030197535A1 (en) * | 2002-04-23 | 2003-10-23 | Yung-Chow Peng | Method and apparatus for change pump circuit |
US20040108883A1 (en) * | 2002-12-09 | 2004-06-10 | Marsh Douglas G. | High speed integrated circuit current switch |
US20080297132A1 (en) * | 2007-05-28 | 2008-12-04 | Hideyuki Aota | Reference voltage generator and voltage regulator incorporating same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4885597A (en) * | 1988-12-27 | 1989-12-05 | Eastman Kodak Company | Non-impact printer apparatus with improved current mirror driver and method of printing |
JPH05225042A (en) * | 1992-02-14 | 1993-09-03 | Fujitsu Ltd | Address conversion control circuit |
DE4216712A1 (en) * | 1992-05-20 | 1993-11-25 | Siemens Ag | Switchable current source circuit and use of such in a phase detector arrangement |
JPH0744455A (en) * | 1993-07-26 | 1995-02-14 | Nec Corp | Address decoder |
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US3878482A (en) * | 1973-10-04 | 1975-04-15 | Gen Electric | Wide-band, voltage controlled oscillator utilizing complimentary metal oxide semiconductor integrated circuits and a constant current MOS-FET field effect transistor |
US4284958A (en) * | 1979-11-13 | 1981-08-18 | Rca Corporation | Folded-cascode amplifier arrangement with current mirror amplifier |
GB2140639A (en) * | 1983-05-18 | 1984-11-28 | Mitsubishi Electric Corp | An integrated circuit |
US4544878A (en) * | 1983-10-04 | 1985-10-01 | At&T Bell Laboratories | Switched current mirror |
US4550284A (en) * | 1984-05-16 | 1985-10-29 | At&T Bell Laboratories | MOS Cascode current mirror |
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US4064506A (en) * | 1976-04-08 | 1977-12-20 | Rca Corporation | Current mirror amplifiers with programmable current gains |
DE2914108C2 (en) * | 1979-04-07 | 1984-03-08 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithically integrated circuit arrangement for a digital-to-analog converter |
US4384274A (en) * | 1979-06-22 | 1983-05-17 | American Microsystems, Inc. | Current mirror digital to analog converter |
FR2496360A1 (en) * | 1980-12-12 | 1982-06-18 | Efcis | Ratiometric digital position encoder of potentiometer cursor - uses MOS integrated circuit current sources and counter synchronised to supply waveform |
US4477782A (en) * | 1983-05-13 | 1984-10-16 | At&T Bell Laboratories | Compound current mirror |
-
1985
- 1985-07-22 US US06/757,335 patent/US4677323A/en not_active Expired - Fee Related
-
1986
- 1986-07-14 EP EP86305375A patent/EP0212833A1/en not_active Withdrawn
- 1986-07-21 CA CA000514274A patent/CA1238692A/en not_active Expired
- 1986-07-22 JP JP61170950A patent/JPS6225510A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US3878482A (en) * | 1973-10-04 | 1975-04-15 | Gen Electric | Wide-band, voltage controlled oscillator utilizing complimentary metal oxide semiconductor integrated circuits and a constant current MOS-FET field effect transistor |
US4284958A (en) * | 1979-11-13 | 1981-08-18 | Rca Corporation | Folded-cascode amplifier arrangement with current mirror amplifier |
GB2140639A (en) * | 1983-05-18 | 1984-11-28 | Mitsubishi Electric Corp | An integrated circuit |
US4544878A (en) * | 1983-10-04 | 1985-10-01 | At&T Bell Laboratories | Switched current mirror |
US4550284A (en) * | 1984-05-16 | 1985-10-29 | At&T Bell Laboratories | MOS Cascode current mirror |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3913446A1 (en) * | 1988-09-02 | 1990-03-15 | Siemens Ag | POWER MIRROR |
US5495155A (en) * | 1991-06-28 | 1996-02-27 | United Technologies Corporation | Device in a power delivery circuit |
DE4201155C1 (en) * | 1992-01-17 | 1993-01-28 | Texas Instruments Deutschland Gmbh, 8050 Freising, De | |
US5491531A (en) * | 1993-04-28 | 1996-02-13 | Allen-Bradley Company, Inc. | Media access controller with a shared class message delivery capability |
US5396133A (en) * | 1993-10-01 | 1995-03-07 | Cirrus Logic, Inc. | High speed CMOS current switching circuits |
WO1995020266A1 (en) * | 1994-01-24 | 1995-07-27 | Arithmos, Inc. | High voltage electronic amplifiers |
US5696459A (en) * | 1994-01-24 | 1997-12-09 | Arithmos, Inc. | High voltage electronic amplifiers |
US5917319A (en) * | 1994-06-28 | 1999-06-29 | National Semiconductor Corporation | Methods and apparatus for sensing currents |
US5646520A (en) * | 1994-06-28 | 1997-07-08 | National Semiconductor Corporation | Methods and apparatus for sensing currents |
US5767736A (en) * | 1995-11-27 | 1998-06-16 | Lucent Technologies Inc. | Charge pump having high switching speed and low switching noise |
US5939908A (en) * | 1996-06-27 | 1999-08-17 | Kelsey-Hayes Company | Dual FET driver circuit |
US6509855B1 (en) * | 2000-06-28 | 2003-01-21 | Intel Corporation | Digital-to-analog cell having reduced power consumption and method therefor |
US20030197535A1 (en) * | 2002-04-23 | 2003-10-23 | Yung-Chow Peng | Method and apparatus for change pump circuit |
US6888386B2 (en) | 2002-04-23 | 2005-05-03 | Winbond Electronics Corporation | Method and apparatus for change pump circuit |
US20040108883A1 (en) * | 2002-12-09 | 2004-06-10 | Marsh Douglas G. | High speed integrated circuit current switch |
US6831498B2 (en) | 2002-12-09 | 2004-12-14 | Douglas G Marsh | High speed integrated circuit current switch |
US20080297132A1 (en) * | 2007-05-28 | 2008-12-04 | Hideyuki Aota | Reference voltage generator and voltage regulator incorporating same |
US7795856B2 (en) * | 2007-05-28 | 2010-09-14 | Ricoh Company, Ltd. | Reference voltage generator and voltage regulator incorporating same |
Also Published As
Publication number | Publication date |
---|---|
CA1238692A (en) | 1988-06-28 |
JPS6225510A (en) | 1987-02-03 |
EP0212833A1 (en) | 1987-03-04 |
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