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US20090279064A1 - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method Download PDF

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Publication number
US20090279064A1
US20090279064A1 US12/506,643 US50664309A US2009279064A1 US 20090279064 A1 US20090279064 A1 US 20090279064A1 US 50664309 A US50664309 A US 50664309A US 2009279064 A1 US2009279064 A1 US 2009279064A1
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United States
Prior art keywords
confinement structure
substrate
liquid confinement
closing member
liquid
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Abandoned
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US12/506,643
Inventor
Sjoerd Nicolaas Lambertus Donders
Patrick Johannes Cornelus Hendrik Smulders
Peter Smits
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ASML Netherlands BV
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ASML Netherlands BV
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Priority to US12/506,643 priority Critical patent/US20090279064A1/en
Assigned to ASML NETHERLANDS B.V. reassignment ASML NETHERLANDS B.V. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DONDERS, SJOERD NICOLAAS LAMBERTUS, SMITS, PETER, SMULDERS, PATRICK JOHANNES CORNELUS HENDRIK
Publication of US20090279064A1 publication Critical patent/US20090279064A1/en
Abandoned legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages

Definitions

  • the present invention relates to a lithographic apparatus and a device manufacturing method.
  • a lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning device which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC.
  • This pattern can be transferred onto a target portion (e.g. comprising part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate.
  • resist radiation-sensitive material
  • a single substrate will contain a network of adjacent target portions that are successively patterned.
  • lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
  • liquid supply system to provide liquid on only a localized area of the substrate and in between the final element of the projection system and the substrate (the substrate generally has a larger surface area than the final element of the projection system).
  • the substrate generally has a larger surface area than the final element of the projection system.
  • liquid is supplied by at least one inlet IN onto the substrate, preferably along the direction of movement of the substrate relative to the final element, and is removed by at least one outlet OUT after having passed under the projection system. That is, as the substrate is scanned beneath the element in a ⁇ X direction, liquid is supplied at the +X side of the element and taken up at the ⁇ X side.
  • FIG. 2 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
  • the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case.
  • FIG. 3 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
  • the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case.
  • FIG. 3 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
  • a closing plate is used to during the execution of the substrate swap.
  • the closing plate is kept on the substrate table in its own receptacle.
  • the closing plate has a depth about equal to the depth of the receptacle ill the substrate table.
  • the closing plate works by replacing the substrate below a liquid confinement structure.
  • the liquid confinement structure is transferred from being positioned adjacent to the substrate to being adjacent the closing plate.
  • the liquid confinement structure then moves downward to meet the closing plate and/or the substrate table, including the closing plate in its receptacle, moves up to meet the liquid confinement structure.
  • the closing plate then may be attached to the liquid confinement structure by, for example, vacuum or magnetic force.
  • the closing plate may be removed from the liquid confinement structure by reversing the above steps.
  • Loading and unloading the closing plate in this manner may result in a large force applied between the liquid confinement structure and the closing plate because of the respective velocity of the liquid confinement structure and/or the closing plate and the large mass of the substrate table.
  • a collision with this sort of force may disturb the frame holding the liquid confinement structure (and so may disturb the accuracy of one or more measurement devices attached to or using the frame) and may cause mechanical damage.
  • throughput of substrates through the apparatus may be influenced by a slow velocity of the substrate table and/or the liquid confinement structure which may need to be employed in order to reduce the force of an impact between the liquid confinement structure and the substrate table holding the closing plate.
  • closing plate loading and unloading system may mean that the closing plate receptacles on different substrate tables must be able to accommodate more than one size of closing plate.
  • a closing plate that has a depth that matches the depth of one receptacle may not be exactly the right depth for another receptacle. If a closing plate does not fit in the receptacle properly so that its upper surface is substantially level with the upper surface of the substrate table, the risk of a damaging collision may be increased.
  • a lithographic apparatus comprising:
  • a substrate table constructed to hold a substrate
  • a projection system configured to project a patterned radiation beam onto a target portion of the substrate
  • a receptacle in the substrate table configured to have a closing plate
  • a displacement mechanism provided in the substrate table arranged to move a closing plate from or toward the receptacle.
  • a lithographic apparatus comprising:
  • a substrate table constructed to hold a substrate
  • a projection system configured to project a patterned radiation beam onto a target portion of the substrate
  • a receptacle in the substrate table configured to contain a closing plate and having a depth
  • an adjustment plate arranged to vary the depth of the receptacle.
  • a device manufacturing method comprising:
  • a substrate table for a lithographic apparatus comprising:
  • a support surface configured to hold a substrate
  • a receptacle configured to contain a closing plate
  • a displacement mechanism provided in the substrate table arranged to move a closing plate from or toward the receptacle.
  • a lithographic apparatus comprising:
  • a substrate table constructed to hold a substrate
  • a projection system configured to project a patterned radiation beam onto a target portion of the substrate
  • liquid supply system configured to at least partly fill a space between the projection system and the substrate with a liquid
  • the liquid supply system comprising a liquid confinement structure configured to at least partly confide the liquid within the space
  • a closing plate configured to close off the liquid confinement structure so as to retain a fluid in the liquid confinement structure when the substrate or the substrate table is no longer adjacent the liquid confinement structure
  • a displacement mechanism provided in the substrate table arranged to move the closing plate from or toward the liquid confinement structure.
  • FIG. 1 depicts a lithographic apparatus according to an embodiment of the invention
  • FIGS. 2 and 3 depict a liquid supply system for use in a lithographic projection apparatus
  • FIG. 4 depicts another liquid supply system for use in a lithographic projection apparatus
  • FIG. 5 depicts a further liquid supply system for use in a lithographic projection apparatus
  • FIG. 6 a depicts a plan view of two substrate tables, one of which is under the projection system of a lithographic projection apparatus;
  • FIG. 6 b depicts a side view of the first substrate table WT 1 of FIG. 6 a;
  • FIG. 7 a depicts a plan view of the two substrate tables shown in FIG. 6 a with the projection system above the closing plate of the second substrate table WT 2 ;
  • FIG. 7 b depicts a side view of the second substrate table WT 2 of FIG. 7 a;
  • FIG. 8 depicts a closing plate with a displacement mechanism according to a first embodiment of the present invention
  • FIG. 9 depicts a closing plate with a displacement mechanism according to a second embodiment of the present invention.
  • FIG. 10 depicts a closing plate and an adjustment plate in a closing plate receptacle.
  • FIG. 1 schematically depicts a lithographic apparatus according to one embodiment of the invention.
  • the apparatus comprises:
  • the illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • optical components such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • the support structure holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment.
  • the support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device.
  • the support structure may be a frame or a table, for example, which may be fixed or movable as required.
  • the support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”
  • patterning device used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
  • the patterning device may be transmissive or reflective.
  • Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels.
  • Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
  • An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
  • projection system used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
  • the apparatus is of a transmissive type (e.g. employing a transmissive mask).
  • the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above, or employing a reflective mask).
  • the lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
  • the illuminator IL receives a radiation beam from a radiation source SO.
  • the source and the lithographic apparatus maybe separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD comprising, for example, suitable directing mirrors and/or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp.
  • the source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
  • the illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam.
  • an adjuster AD for adjusting the angular intensity distribution of the radiation beam.
  • the illuminator IL may comprise various other components, such as an integrator IN and a condenser CO.
  • the illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
  • the radiation beam PB is incident on the patterning device (e.g., mask MA), which is held on the support structure (e.g., mask table MT), and is patterned by the patterning device. Having traversed the mask MA, the radiation beam PB passes through the projection system PL, which focuses the beam onto a target portion C of the substrate W.
  • the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam PB.
  • the first positioner PM and another position sensor (which is not explicitly depicted in FIG.
  • the mask table MT can be used to accurately position the mask MA with respect to the path of the radiation beam PB, e.g. after mechanical retrieval from a mask library, or during a scan.
  • movement of the mask table MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM.
  • movement of the substrate table WT maybe realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW.
  • the mask table MT may be connected to a short-stroke actuator only, or may be fixed.
  • Mask MA and substrate W may be aligned using mask alignment marks M 1 , M 2 and substrate alignment marks P 1 , P 2 .
  • the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks).
  • the mask alignment marks may be located between the dies.
  • the depicted apparatus could be used in at least one of the following modes:
  • step mode the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e. a single static exposure).
  • the substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed.
  • step mode the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
  • the mask table MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure).
  • the velocity and direction of the substrate table WT relative to the mask table MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PL.
  • the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
  • the mask table MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C.
  • a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan.
  • This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
  • FIG. 4 A further immersion lithography solution with a localized liquid supply system is shown in FIG. 4 .
  • Liquid is supplied by two groove inlets IN on either side of the projection system PL and is removed by a plurality of discrete outlets OUT arranged radially outwardly of the inlets TN.
  • the inlets IN and OUT can be arranged in a plate with a hole in its center and through which the projection beam is projected.
  • Liquid is supplied by one groove inlet IN on one side of the projection system PL and removed by a plurality of discrete outlets OUT on the other side of the projection system PL, causing a flow of a thin film of liquid between the projection system PL and the substrate W.
  • the choice of which combination of inlet IN and outlets OUT to use can depend on the direction of movement of the substrate W (the other combination of inlet IN and outlets OUT being inactive).
  • FIG. 5 Another immersion lithography solution with a localized liquid supply system solution which has been proposed is to provide the liquid supply system with a liquid confinement structure which extends along at least a part of a boundary of the space between the final element of the projection system and the substrate table.
  • the liquid confinement structure is substantially stationary relative to the projection system in the XY plane though there may be some relative movement in the Z direction (in the direction of the optical axis).
  • a seal is formed between the liquid confinement structure and the surface of the substrate.
  • the seal is a contactless seal such as a gas seal.
  • Such a system with a gas seal is disclosed in U.S. patent application Ser. No. 10/705,783, hereby incorporated in its entirety by reference.
  • FIG. 5 depicts an arrangement of a reservoir 10 , which forms a contactless seal to the substrate around the image field of the projection system so that liquid is confined to fill a space between the substrate surface and the final element of the projection system.
  • a liquid confinement structure 12 positioned below and surrounding the final element of the projection system PL forms the reservoir. Liquid is brought into the space below the projection system and within the liquid confinement structure 12 .
  • the liquid confinement structure 12 extends a little above the final element of the projection system and the liquid level rises above the final element so that a buffer of liquid is provided.
  • the liquid confinement structure 12 has an inner periphery that at the upper end preferably closely conforms to the shape of the projection system or the final element thereof and may, e.g., be round. At the bottom, the inner periphery closely conforms to the shape of the image field, e.g., rectangular though this need not be the case.
  • the liquid may be confined in the reservoir by, for example, a gas seal 16 between the bottom of the liquid confinement structure 12 and the surface of the substrate W.
  • the gas seal is formed by gas, e.g. air, synthetic air, N 2 or an inert gas, provided under pressure via inlet 15 to the gap between liquid confinement structure 12 and substrate and extracted via first outlet 14 .
  • gas e.g. air, synthetic air, N 2 or an inert gas
  • the overpressure on the gas inlet 15 , vacuum level on the first outlet 14 and geometry of the gap are arranged so that there is a high-velocity gas flow inwards that confines the liquid. It will be understood by the person skilled in the art that other types of seal could be used to contain the liquid.
  • the gas seal may form between the liquid confinement structure and the substrate table.
  • the gas seal is relied upon as little as possible since the more it is used, the greater the risk of dry spots on the final element of the projection system or gas bubbles in the liquid. As little exposure as possible to external gases is desired to prevent dry spots on the projection system.
  • Alternative methods of confining the liquid may be used such as a mechanical method.
  • FIGS. 6 a and 6 b show a first substrate table WT 1 in a position at which substrate W may be exposed.
  • the projection system PL is positioned above the substrate W on the first substrate table WT 1 .
  • This first substrate table WT 1 also contains a closing plate 30 in a receptacle 40 on the substrate table.
  • the second substrate table WT 2 has an empty closing plate receptacle 40 .
  • FIGS. 7 a and 7 b show the substrate tables WT 1 , WT 2 during a substrate swap process.
  • the closing plate 30 has replaced the substrate W in its position below the liquid confinement structure 12 adjacent the projection system PL. Where the substrate was positioned below the projection system PL, the closing plate is now coupled with the liquid confinement structure 12 .
  • the second substrate table WT 2 is moved to be positioned adjacent to the projection system PL and to the liquid confinement structure 12 coupled with the closing plate 30 . Once the second substrate table WT 2 is properly positioned, the closing plate 30 may be put into the receptacle 40 on the second substrate table WT 2 by movement of the liquid confinement structure 12 and/or the second substrate table WT 2 .
  • the second substrate table WT 2 may be moved under the projection system PL in order expose the substrate W 2 .
  • the gas seal or some other liquid containment mechanism confines the liquid for a short time.
  • the projection system and liquid confinement structure coupled with the closing plate 30 above receptacle 40 of substrate table WT 2 is given as reference numeral 42 .
  • a displacement mechanism may be used to move the closing plate 30 towards and/or away from the liquid confinement structure 12 separately from the substrate table.
  • the closing plate may be made of metal or glass.
  • the mass of a closing plate may be about 10 grams, much less than the mass of a substrate table which may be of the order of tens of kilograms.
  • the force between a rising closing plate and a liquid confinement structure 12 (which optionally may be descending toward the closing plate) will be much lower than if a heavier substrate table were raised to meet the liquid confinement structure. If the mass of the moving component is reduced, its force is reduced and so the result of a collision between the closing plate and the liquid confinement structure will be much less damaging than a collision between a heavier substrate table and the liquid confinement structure.
  • a displacement mechanism for an object with a lower mass is typically easier to manufacture and run than a displacement mechanism for an object with a greater mass.
  • the actuation strength is what determines the acceleration of the object (e.g., the closing plate or the substrate table).
  • the actuation of the closing plate (rather than, for example, the substrate table) may thus reduce the chance of a damaging collision with the liquid confinement structure.
  • actuation of the closing plate may mean that a weaker displacement mechanism, that may be cheaper and easier to manufacture, may be used rather than a stronger displacement mechanism for moving, for example, the entire substrate table.
  • the closing plate may be coupled with the liquid confinement structure 12 more quickly because the risk of a damaging collision may be lower (i.e. the force of the closing plate may still be reduced if its mass is reduced more than its acceleration is increased).
  • the speed of a substrate swap may be increased and throughput time reduced.
  • a closing plate holder may be lifted as well as the closing plate.
  • the closing plate holder may be, for example, a 1.5 mm thick vacuum table for a pin type displacement mechanism as discussed with reference to FIG. 8 below.
  • An advantage of a closing plate holder is that the closing plate may be protected from damage, which might be caused by a displacement mechanism acting directly on the closing plate.
  • FIG. 8 illustrates a pin type of displacement mechanism.
  • the substrate table WT comprises a vacuum table part 70 made of a material having substantially zero thermal coefficient of expansion such as Zerodur, atop of which is a so-called pimple- or burl-plate 72 .
  • a vacuum table part 70 made of a material having substantially zero thermal coefficient of expansion such as Zerodur, atop of which is a so-called pimple- or burl-plate 72 .
  • a plurality of through-holes 74 in an embodiment shown in FIG. 8 , three holes are provided of which two are shown in FIG. 8 ) which allow one or more pins, described below, and that are part of the displacement mechanism, to come into engagement with a lower surface of the closing plate during movement of the closing plate.
  • the upper major surface of the plate 72 has a recessed surface which defines, together with the lower major face of the closing plate, a laminar underpressure chamber.
  • this chamber is evacuated by means of a pump (not shown) and passageways (also not shown) through the table part 70 and plate 72 .
  • the holes 74 are arranged symmetrically, at the vertices of an equilateral triangle centered on a vertical axis Z of the substrate table WT and of the closing plate 30 .
  • the axis Z coincides with the center of gravity of the closing plate 30 .
  • the upper extremities of the pins coincide in a horizontal plane, which is substantially parallel to the lower face of the closing plate 30 .
  • the pins may be driven upwardly, e.g. by moving the carrier plate 78 upwardly from the FIG. 8 position, to lift the closing plate from the plate 72 .
  • the pins may be driven upwardly to meet a closing plate 30 coupled, for example, to the liquid confinement structure in order to put the closing plate 30 in the receptacle 40 .
  • a linear actuator 80 of the pin group 76 may be used to cause the pins to project through their respective holes and contact against the underside of the closing plate, to lift the closing plate 30 clear of the plate 72 or to place the closing plate 30 onto the plate 72 .
  • the actuator 80 may be a linear electric motor e.g. of the well-known voice-coil type.
  • each of the pins may be individually movable by an actuator.
  • one pin may be used.
  • the holes 74 may not extend through the plate 72 and instead act against the plate 72 so that movement of the plate 72 causes movement of the closing plate 30 lying on top of the plate 72 . As discussed above, this type of closing plate holder may avoid direct operation of the displacement mechanism against the closing plate 30 .
  • FIG. 9 illustrates a displacement mechanism comprising one or more pre-stressed leaf springs actuated by one or more electromagnets.
  • a separate magnet may be provided for each of a plurality of leaf springs or a single magnet may be provided for all of a plurality of leaf springs, or any other combination maybe provided.
  • the one or more leaf springs are made of steel.
  • FIG. 9 shows substrate table WT with a closing plate receptacle 40 containing a closing plate 30 .
  • Three stressed leaf springs 60 are held in their stressed state by electromagnets 64 .
  • the stressed leaf springs 60 return to their unstressed shape which is depicted by reference numeral 62 , thereby lifting the closing plate 30 .
  • the velocity with which the closing plate 30 is lifted is determined by the unstressing returned force of the leaf springs, and the number of leaf springs used.
  • the unstressed leaf spring(s) 60 may be positioned in contact with a closing plate 30 , for example, coupled to the liquid confinement structure and then the electromagnet(s) may be engaged to stress the leaf spring(s) 60 to put the closing plate 30 into the receptacle.
  • the closing pate 30 may simply just lie on top of the substrate table WT in a designated receptacle 40 where the displacement mechanism is provided. In such a case, a gap between the liquid confinement structure 12 and the substrate W and/or substrate table WT should remain sufficiently large to avoid collision of the liquid confinement structure 12 with the closing plate 30 .
  • FIG. 10 shows a section of a substrate table WT with a closing plate receptacle 40 containing a closing plate 30 .
  • the closing plate 30 is not the same depth as the recessed receptacle 40 because, for instance, it has the correct size for a closing plate receptacle 40 on a different substrate table.
  • an adjustment plate 50 may be used to raise the top surface of the closing plate 30 so that it is at substantially the same height as the top surface of the substrate table WT. In this way, it is possible to use a single closing plate 30 for two or more substrate tables. This is because an adjustment plate 50 enables a closing plate 30 always to fit in a closing plate receptacle 40 of any substrate table.
  • the combination of the adjustment plate 50 and the closing plate 30 may be moved together using the displacement mechanisms described herein.
  • the depth of a recessed closing plate receptacle 40 is about of 50 to 200 microns.
  • the liquid confinement structure and closing plate must meet with certain tolerances in order not to undergo a damaging collision.
  • the required tolerance for a closing plate's height (depth) relative to the surface of the substrate table in which it is contained should be about 5 microns.
  • An adjustment plate compensates for this range in recessed closing plate receptacle depth by making up for the difference in the recessed receptacle depth and the depth of the closing plate.
  • lithographic apparatus in the manufacture of ICs
  • the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc.
  • LCDs liquid-crystal displays
  • any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively.
  • the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
  • a topography in a patterning device defines the pattern created on a substrate.
  • the topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof.
  • the patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
  • radiation and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (V) radiation (e.g. having a wavelength of or about 365, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
  • V ultraviolet
  • EUV extreme ultra-violet
  • lens may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
  • the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g. semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
  • a data storage medium e.g. semiconductor memory, magnetic or optical disk
  • a liquid supply system is any mechanism that provides a liquid to a space between the projection system and the substrate and/or substrate table. It may comprise any combination of one or more structures, one or more liquid inlets, one or more gas inlets, one or more gas outlets, and/or one or more liquid outlets, the combination providing and confining the liquid to the space.
  • a surface of the space may be limited to a portion of the substrate and/or substrate table, a surface of the space may completely cover a surface of the substrate and/or substrate table, or the space may envelop the substrate and/or substrate table.

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Abstract

In an immersion lithographic apparatus, a closing plate is used to contain liquid in a liquid confinement structure while, for example, substrates are swapped on a substrate table. A closing plate displacement mechanism using, for example, a combination of one or more leaf springs and one or more electromagnets or a combination of one or more linear actuators and one more pins, is used to move the closing plate toward or from the liquid confinement structure. In an embodiment, an adjustment plate is used to compensate for closing plates of varying thickness in closing plate receptacles of varying depth on different substrate tables.

Description

    FIELD
  • The present invention relates to a lithographic apparatus and a device manufacturing method.
  • BACKGROUND
  • A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. comprising part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
  • It has been proposed to immerse the substrate in the lithographic projection apparatus in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. The point of this is to enable imaging of smaller features since the exposure radiation will have a shorter wavelength in the liquid. (The effect of the liquid may also be regarded as increasing the effective NA of the system and also increasing the depth of focus.) Other immersion liquids have been proposed, including water with solid particles (e.g. quartz) suspended therein.
  • However, submersing the substrate or substrate and substrate table in a bath of liquid (see, for example, United States patent U.S. Pat. No. 4,509,852, hereby incorporated in its entirety by reference) means that there is a large body of liquid that must be accelerated during a scanning exposure. This requires additional or more powerful motors and turbulence in the liquid may lead to undesirable and unpredictable effects.
  • One of the solutions proposed is for a liquid supply system to provide liquid on only a localized area of the substrate and in between the final element of the projection system and the substrate (the substrate generally has a larger surface area than the final element of the projection system). One way which has been proposed to arrange for this is disclosed in PCT patent application WO 99/49504, hereby incorporated in its entirety by reference. As illustrated in FIGS. 2 and 3, liquid is supplied by at least one inlet IN onto the substrate, preferably along the direction of movement of the substrate relative to the final element, and is removed by at least one outlet OUT after having passed under the projection system. That is, as the substrate is scanned beneath the element in a −X direction, liquid is supplied at the +X side of the element and taken up at the −X side. FIG. 2 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source. In the illustration of FIG. 2 the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case. Various orientations and numbers of in- and out-lets positioned around the final element are possible, one example is illustrated in FIG. 3 in which four sets of an inlet with an outlet on either side are provided in a regular pattern around the final element.
  • Once a substrate has been exposed, it is necessary to remove it and swap it with the next substrate to be exposed. In an immersion lithography apparatus, it is typically undesirable to empty the system of the immersion liquid in order to remove the substrate and then refill it when the next substrate is in place. This is because drying of and rewetting the projection system (typically the last optical element thereof closest to the substrate) may take a long time and so possibly reduce throughput of substrates through the apparatus. Additionally or alternatively, emptying and refilling may increase the probability of dry spots or gas bubbles forming on the projection system and disturbing the projection beam as it passes through the projection system into the liquid.
  • SUMMARY
  • Accordingly, it would be advantageous, for example, to keep the projection system wet during, for instance, substrate swap (i.e., removal of a substrate and replacement with a new substrate).
  • According to an embodiment of the invention, in order to keep the last optical element of the projection system wet, a closing plate is used to during the execution of the substrate swap. During the exposure of a substrate, the closing plate is kept on the substrate table in its own receptacle. The closing plate has a depth about equal to the depth of the receptacle ill the substrate table. The closing plate works by replacing the substrate below a liquid confinement structure. To do this, the liquid confinement structure is transferred from being positioned adjacent to the substrate to being adjacent the closing plate. In an implementation, the liquid confinement structure then moves downward to meet the closing plate and/or the substrate table, including the closing plate in its receptacle, moves up to meet the liquid confinement structure. The closing plate then may be attached to the liquid confinement structure by, for example, vacuum or magnetic force. The closing plate may be removed from the liquid confinement structure by reversing the above steps.
  • Loading and unloading the closing plate in this manner may result in a large force applied between the liquid confinement structure and the closing plate because of the respective velocity of the liquid confinement structure and/or the closing plate and the large mass of the substrate table. A collision with this sort of force may disturb the frame holding the liquid confinement structure (and so may disturb the accuracy of one or more measurement devices attached to or using the frame) and may cause mechanical damage. Furthermore, throughput of substrates through the apparatus may be influenced by a slow velocity of the substrate table and/or the liquid confinement structure which may need to be employed in order to reduce the force of an impact between the liquid confinement structure and the substrate table holding the closing plate.
  • Further, use of a closing plate loading and unloading system may mean that the closing plate receptacles on different substrate tables must be able to accommodate more than one size of closing plate. A closing plate that has a depth that matches the depth of one receptacle may not be exactly the right depth for another receptacle. If a closing plate does not fit in the receptacle properly so that its upper surface is substantially level with the upper surface of the substrate table, the risk of a damaging collision may be increased.
  • Accordingly, it would be advantageous, for example, to have a closing plate mechanism which reduces the risk of a damaging collision between the liquid confinement structure of a projection apparatus and a closing plate on a substrate table.
  • According to an aspect of the invention, there is provided a lithographic apparatus, comprising:
  • a substrate table constructed to hold a substrate;
  • a projection system configured to project a patterned radiation beam onto a target portion of the substrate;
  • a receptacle in the substrate table configured to have a closing plate; and
  • a displacement mechanism provided in the substrate table arranged to move a closing plate from or toward the receptacle.
  • According to another aspect of the invention, there is provided a lithographic apparatus, comprising:
  • a substrate table constructed to hold a substrate;
  • a projection system configured to project a patterned radiation beam onto a target portion of the substrate;
  • a receptacle in the substrate table configured to contain a closing plate and having a depth; and
  • an adjustment plate arranged to vary the depth of the receptacle.
  • According to another aspect of the invention, there is provided a device manufacturing method, comprising:
  • projecting a patterned beam of radiation through a liquid, which is contained by a liquid confinement structure, onto a substrate held by a substrate table; and
  • after projecting the patterned beam, moving the substrate table to a position such that a closing plate on the substrate table is positioned under the liquid confinement structure, and
  • while the substrate table is held stationary relative to the liquid confinement structure, moving the closing plate to close a portion of the liquid confinement structure.
  • According to an aspect of the invention, there is provided a substrate table for a lithographic apparatus, the substrate table comprising:
  • a support surface configured to hold a substrate;
  • a receptacle configured to contain a closing plate; and
  • a displacement mechanism provided in the substrate table arranged to move a closing plate from or toward the receptacle.
  • According to an aspect of the invention, there is provided a lithographic apparatus, comprising:
  • a substrate table constructed to hold a substrate;
  • a projection system configured to project a patterned radiation beam onto a target portion of the substrate;
  • a liquid supply system configured to at least partly fill a space between the projection system and the substrate with a liquid, the liquid supply system comprising a liquid confinement structure configured to at least partly confide the liquid within the space;
  • a closing plate configured to close off the liquid confinement structure so as to retain a fluid in the liquid confinement structure when the substrate or the substrate table is no longer adjacent the liquid confinement structure; and
  • a displacement mechanism provided in the substrate table arranged to move the closing plate from or toward the liquid confinement structure.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
  • FIG. 1 depicts a lithographic apparatus according to an embodiment of the invention;
  • FIGS. 2 and 3 depict a liquid supply system for use in a lithographic projection apparatus;
  • FIG. 4 depicts another liquid supply system for use in a lithographic projection apparatus;
  • FIG. 5 depicts a further liquid supply system for use in a lithographic projection apparatus;
  • FIG. 6 a depicts a plan view of two substrate tables, one of which is under the projection system of a lithographic projection apparatus;
  • FIG. 6 b depicts a side view of the first substrate table WT1 of FIG. 6 a;
  • FIG. 7 a depicts a plan view of the two substrate tables shown in FIG. 6 a with the projection system above the closing plate of the second substrate table WT2;
  • FIG. 7 b depicts a side view of the second substrate table WT2 of FIG. 7 a;
  • FIG. 8 depicts a closing plate with a displacement mechanism according to a first embodiment of the present invention;
  • FIG. 9 depicts a closing plate with a displacement mechanism according to a second embodiment of the present invention; and
  • FIG. 10 depicts a closing plate and an adjustment plate in a closing plate receptacle.
  • DETAILED DESCRIPTION
  • FIG. 1 schematically depicts a lithographic apparatus according to one embodiment of the invention. The apparatus comprises:
    • an illumination system (illuminator) IL configured to condition a radiation beam PB (e.g. UV radiation or DUV radiation).
    • a support structure (e.g. a mask table) MT constructed to hold a patterning device (e.g. a mask) MA and connected to a first positioner PM configured to accurately position the patterning device in accordance with certain parameters;
    • a substrate table (e.g. a wafer table) WT constructed to hold a substrate (e.g. a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters; and
    • a projection system (e.g. a refractive projection lens system) PL configured to project a pattern imparted to the radiation beam PB by patterning device MA onto a target portion C (e.g. comprising one or more dies) of the substrate W.
  • The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • The support structure holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”
  • The term “patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
  • The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
  • The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
  • As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above, or employing a reflective mask).
  • The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
  • Referring to FIG. 1, the illuminator IL receives a radiation beam from a radiation source SO. The source and the lithographic apparatus maybe separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD comprising, for example, suitable directing mirrors and/or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
  • The illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may comprise various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
  • The radiation beam PB is incident on the patterning device (e.g., mask MA), which is held on the support structure (e.g., mask table MT), and is patterned by the patterning device. Having traversed the mask MA, the radiation beam PB passes through the projection system PL, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF (e.g. an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam PB. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in FIG. 1) can be used to accurately position the mask MA with respect to the path of the radiation beam PB, e.g. after mechanical retrieval from a mask library, or during a scan. In general, movement of the mask table MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WT maybe realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the mask table MT may be connected to a short-stroke actuator only, or may be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one die is provided on the mask MA, the mask alignment marks may be located between the dies.
  • The depicted apparatus could be used in at least one of the following modes:
  • 1. In step mode, the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
  • 2. In scan mode, the mask table MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the mask table MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PL. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
  • 3. In another mode, the mask table MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
  • Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
  • A further immersion lithography solution with a localized liquid supply system is shown in FIG. 4. Liquid is supplied by two groove inlets IN on either side of the projection system PL and is removed by a plurality of discrete outlets OUT arranged radially outwardly of the inlets TN. The inlets IN and OUT can be arranged in a plate with a hole in its center and through which the projection beam is projected. Liquid is supplied by one groove inlet IN on one side of the projection system PL and removed by a plurality of discrete outlets OUT on the other side of the projection system PL, causing a flow of a thin film of liquid between the projection system PL and the substrate W. The choice of which combination of inlet IN and outlets OUT to use can depend on the direction of movement of the substrate W (the other combination of inlet IN and outlets OUT being inactive).
  • Another immersion lithography solution with a localized liquid supply system solution which has been proposed is to provide the liquid supply system with a liquid confinement structure which extends along at least a part of a boundary of the space between the final element of the projection system and the substrate table. Such a system is shown in FIG. 5. The liquid confinement structure is substantially stationary relative to the projection system in the XY plane though there may be some relative movement in the Z direction (in the direction of the optical axis). A seal is formed between the liquid confinement structure and the surface of the substrate. In an embodiment, the seal is a contactless seal such as a gas seal. Such a system with a gas seal is disclosed in U.S. patent application Ser. No. 10/705,783, hereby incorporated in its entirety by reference.
  • FIG. 5 depicts an arrangement of a reservoir 10, which forms a contactless seal to the substrate around the image field of the projection system so that liquid is confined to fill a space between the substrate surface and the final element of the projection system. A liquid confinement structure 12 positioned below and surrounding the final element of the projection system PL forms the reservoir. Liquid is brought into the space below the projection system and within the liquid confinement structure 12. The liquid confinement structure 12 extends a little above the final element of the projection system and the liquid level rises above the final element so that a buffer of liquid is provided. The liquid confinement structure 12 has an inner periphery that at the upper end preferably closely conforms to the shape of the projection system or the final element thereof and may, e.g., be round. At the bottom, the inner periphery closely conforms to the shape of the image field, e.g., rectangular though this need not be the case.
  • The liquid may be confined in the reservoir by, for example, a gas seal 16 between the bottom of the liquid confinement structure 12 and the surface of the substrate W. The gas seal is formed by gas, e.g. air, synthetic air, N2 or an inert gas, provided under pressure via inlet 15 to the gap between liquid confinement structure 12 and substrate and extracted via first outlet 14. The overpressure on the gas inlet 15, vacuum level on the first outlet 14 and geometry of the gap are arranged so that there is a high-velocity gas flow inwards that confines the liquid. It will be understood by the person skilled in the art that other types of seal could be used to contain the liquid.
  • When the substrate W is removed, the gas seal may form between the liquid confinement structure and the substrate table. In an embodiment, the gas seal is relied upon as little as possible since the more it is used, the greater the risk of dry spots on the final element of the projection system or gas bubbles in the liquid. As little exposure as possible to external gases is desired to prevent dry spots on the projection system. Alternative methods of confining the liquid may be used such as a mechanical method.
  • FIGS. 6 a and 6 b show a first substrate table WT1 in a position at which substrate W may be exposed. The projection system PL is positioned above the substrate W on the first substrate table WT1. This first substrate table WT1 also contains a closing plate 30 in a receptacle 40 on the substrate table. The second substrate table WT2 has an empty closing plate receptacle 40.
  • FIGS. 7 a and 7 b show the substrate tables WT1, WT2 during a substrate swap process. The closing plate 30 has replaced the substrate W in its position below the liquid confinement structure 12 adjacent the projection system PL. Where the substrate was positioned below the projection system PL, the closing plate is now coupled with the liquid confinement structure 12. The second substrate table WT2 is moved to be positioned adjacent to the projection system PL and to the liquid confinement structure 12 coupled with the closing plate 30. Once the second substrate table WT2 is properly positioned, the closing plate 30 may be put into the receptacle 40 on the second substrate table WT2 by movement of the liquid confinement structure 12 and/or the second substrate table WT2. Once the closing plate 30 is put into the receptacle 40 on the second substrate table WT2, the second substrate table WT2 may be moved under the projection system PL in order expose the substrate W2. Between the closing plate being coupled with the liquid confinement structure 12 and the substrate W being positioned below the liquid confinement structure 12, the gas seal or some other liquid containment mechanism confines the liquid for a short time. In FIG. 7 a, the projection system and liquid confinement structure coupled with the closing plate 30 above receptacle 40 of substrate table WT2 is given as reference numeral 42.
  • Rather than moving a substrate table WT, WT2 and/or the liquid confinement structure 12 in order to couple the closing plate 30 with the liquid confinement structure 12 or to decouple the closing plate 30 from the liquid confinement structure 12, a displacement mechanism, examples of which are shown in FIGS. 8 and 9, may be used to move the closing plate 30 towards and/or away from the liquid confinement structure 12 separately from the substrate table. In an embodiment, the closing plate may be made of metal or glass.
  • The mass of a closing plate may be about 10 grams, much less than the mass of a substrate table which may be of the order of tens of kilograms. Thus, for example, the force between a rising closing plate and a liquid confinement structure 12 (which optionally may be descending toward the closing plate) will be much lower than if a heavier substrate table were raised to meet the liquid confinement structure. If the mass of the moving component is reduced, its force is reduced and so the result of a collision between the closing plate and the liquid confinement structure will be much less damaging than a collision between a heavier substrate table and the liquid confinement structure.
  • Furthermore, a displacement mechanism for an object with a lower mass is typically easier to manufacture and run than a displacement mechanism for an object with a greater mass. In other words, for example, it is usually easier to make a weak actuator with a low mass than a weak actuator with a large mass; and the actuation strength is what determines the acceleration of the object (e.g., the closing plate or the substrate table). The actuation of the closing plate (rather than, for example, the substrate table) may thus reduce the chance of a damaging collision with the liquid confinement structure. Additionally or alternatively, actuation of the closing plate may mean that a weaker displacement mechanism, that may be cheaper and easier to manufacture, may be used rather than a stronger displacement mechanism for moving, for example, the entire substrate table.
  • Furthermore, the closing plate may be coupled with the liquid confinement structure 12 more quickly because the risk of a damaging collision may be lower (i.e. the force of the closing plate may still be reduced if its mass is reduced more than its acceleration is increased). Thus, the speed of a substrate swap may be increased and throughput time reduced.
  • In an embodiment, a closing plate holder may be lifted as well as the closing plate. The closing plate holder may be, for example, a 1.5 mm thick vacuum table for a pin type displacement mechanism as discussed with reference to FIG. 8 below. An advantage of a closing plate holder is that the closing plate may be protected from damage, which might be caused by a displacement mechanism acting directly on the closing plate.
  • FIG. 8 illustrates a pin type of displacement mechanism. The substrate table WT comprises a vacuum table part 70 made of a material having substantially zero thermal coefficient of expansion such as Zerodur, atop of which is a so-called pimple- or burl-plate 72. Defined vertically through the table part 70 and the plate 72 are a plurality of through-holes 74 (in an embodiment shown in FIG. 8, three holes are provided of which two are shown in FIG. 8) which allow one or more pins, described below, and that are part of the displacement mechanism, to come into engagement with a lower surface of the closing plate during movement of the closing plate.
  • The upper major surface of the plate 72 has a recessed surface which defines, together with the lower major face of the closing plate, a laminar underpressure chamber. When the closing plate 30 is to be held against the plate 72, this chamber is evacuated by means of a pump (not shown) and passageways (also not shown) through the table part 70 and plate 72.
  • In an embodiment the holes 74 are arranged symmetrically, at the vertices of an equilateral triangle centered on a vertical axis Z of the substrate table WT and of the closing plate 30. The axis Z coincides with the center of gravity of the closing plate 30. Coaxially within the holes 74, and consequently similarly symmetrically arranged, are three pins 76 which are of equal length and held by a rigid carrier plate 78 below and substantially parallel to the plate 72 and table part 70. The upper extremities of the pins coincide in a horizontal plane, which is substantially parallel to the lower face of the closing plate 30.
  • Once the pressure in the underpressure chamber has been increased, the pins may be driven upwardly, e.g. by moving the carrier plate 78 upwardly from the FIG. 8 position, to lift the closing plate from the plate 72. Similarly, the pins may be driven upwardly to meet a closing plate 30 coupled, for example, to the liquid confinement structure in order to put the closing plate 30 in the receptacle 40. A linear actuator 80 of the pin group 76 may be used to cause the pins to project through their respective holes and contact against the underside of the closing plate, to lift the closing plate 30 clear of the plate 72 or to place the closing plate 30 onto the plate 72. The actuator 80 may be a linear electric motor e.g. of the well-known voice-coil type. Instead of a carrier plate 78, each of the pins may be individually movable by an actuator.
  • In an embodiment, one pin may be used. Further, in an embodiment, the holes 74 may not extend through the plate 72 and instead act against the plate 72 so that movement of the plate 72 causes movement of the closing plate 30 lying on top of the plate 72. As discussed above, this type of closing plate holder may avoid direct operation of the displacement mechanism against the closing plate 30.
  • FIG. 9 illustrates a displacement mechanism comprising one or more pre-stressed leaf springs actuated by one or more electromagnets. A separate magnet may be provided for each of a plurality of leaf springs or a single magnet may be provided for all of a plurality of leaf springs, or any other combination maybe provided. In an embodiment, the one or more leaf springs are made of steel.
  • FIG. 9 shows substrate table WT with a closing plate receptacle 40 containing a closing plate 30. Three stressed leaf springs 60 are held in their stressed state by electromagnets 64. When the electromagnets are switched off, the stressed leaf springs 60 return to their unstressed shape which is depicted by reference numeral 62, thereby lifting the closing plate 30. The velocity with which the closing plate 30 is lifted is determined by the unstressing returned force of the leaf springs, and the number of leaf springs used. To return a closing plate 30 to the receptacle 40, the unstressed leaf spring(s) 60 may be positioned in contact with a closing plate 30, for example, coupled to the liquid confinement structure and then the electromagnet(s) may be engaged to stress the leaf spring(s) 60 to put the closing plate 30 into the receptacle.
  • While in the embodiments described above a recessed receptacle 40 has been described, it may not be necessary to provide a receptacle 40 that is recessed. For example, the closing pate 30 may simply just lie on top of the substrate table WT in a designated receptacle 40 where the displacement mechanism is provided. In such a case, a gap between the liquid confinement structure 12 and the substrate W and/or substrate table WT should remain sufficiently large to avoid collision of the liquid confinement structure 12 with the closing plate 30.
  • FIG. 10 shows a section of a substrate table WT with a closing plate receptacle 40 containing a closing plate 30. The closing plate 30 is not the same depth as the recessed receptacle 40 because, for instance, it has the correct size for a closing plate receptacle 40 on a different substrate table. In order to compensate for this difference in closing plate depth, an adjustment plate 50 may be used to raise the top surface of the closing plate 30 so that it is at substantially the same height as the top surface of the substrate table WT. In this way, it is possible to use a single closing plate 30 for two or more substrate tables. This is because an adjustment plate 50 enables a closing plate 30 always to fit in a closing plate receptacle 40 of any substrate table. The combination of the adjustment plate 50 and the closing plate 30 may be moved together using the displacement mechanisms described herein.
  • Under normal conditions, the depth of a recessed closing plate receptacle 40 is about of 50 to 200 microns. The liquid confinement structure and closing plate must meet with certain tolerances in order not to undergo a damaging collision. In particular, the required tolerance for a closing plate's height (depth) relative to the surface of the substrate table in which it is contained should be about 5 microns. An adjustment plate compensates for this range in recessed closing plate receptacle depth by making up for the difference in the recessed receptacle depth and the depth of the closing plate.
  • In European Patent Application No. 03257072.3, the idea of a twin or dual stage immersion lithography apparatus is disclosed. Such an apparatus is provided with two tables for supporting a substrate. Leveling measurements are carried out with a table at a first position, without immersion liquid, and exposure is carried out with a table at a second position, where immersion liquid is present. Alternatively, the apparatus has only one table
  • Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
  • Although specific reference may have been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows, is not limited to optical lithography. In imprint lithography, a topography in a patterning device defines the pattern created on a substrate. The topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
  • The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (V) radiation (e.g. having a wavelength of or about 365, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
  • The term “lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
  • While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g. semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
  • One or more embodiments of the present invention may be applied to any immersion lithography apparatus, in particular, but not exclusively, to those types mentioned above. A liquid supply system is any mechanism that provides a liquid to a space between the projection system and the substrate and/or substrate table. It may comprise any combination of one or more structures, one or more liquid inlets, one or more gas inlets, one or more gas outlets, and/or one or more liquid outlets, the combination providing and confining the liquid to the space. In an embodiment, a surface of the space may be limited to a portion of the substrate and/or substrate table, a surface of the space may completely cover a surface of the substrate and/or substrate table, or the space may envelop the substrate and/or substrate table.
  • The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.

Claims (21)

1.-33. (canceled)
34. A lithographic apparatus comprising:
at least two tables, of which at least one is constructed to hold a substrate, each of at least two of the tables comprising a receptacle constructed and arranged to receive a closing member;
a projection system configured to project a patterned radiation beam onto a target portion of the substrate; and
a liquid confinement structure configured to provide a liquid between a final element of the projection system and the substrate during projection.
35. The lithographic apparatus of claim 34, wherein the liquid confinement structure is constructed and arranged to couple with the closing member.
36. The lithographic apparatus of claim 34, further comprising a displacement mechanism configured to displace the closing member from at least one of the tables.
37. The lithographic apparatus of claim 34, wherein each of the receptacles further contains an adjustment plate configured to raise the closing member.
38. The lithographic apparatus of claim 34, further comprising a controller configured to cause transfer of a closing member between at least two tables.
39. A device manufacturing method of exposing, using a projection system, a substrate supported by a first table; the exposure occurring by the projection of a patterned beam through a liquid which is contained by a liquid confinement structure onto the substrate, the method comprising:
after completion of exposures on the substrate, moving the first table to a position such that a closing member of the first table is positioned under the liquid confinement structure;
while the first table is under the liquid confinement structure, coupling the closing member to the liquid confinement structure;
moving a second table to a position under the liquid confinement structure and the closing member coupled to the liquid confinement structure; and
while the second table is under the liquid confinement structure and the closing member, transferring the closing member from the liquid confinement structure to the second table.
40. The method of claim 39, wherein the second table comprises a receptacle and transferring the closing member from the liquid confinement structure to the second table comprises transferring the closing member to the receptacle.
41. A lithographic apparatus comprising:
a first table constructed to hold a substrate;
a second table;
a projection system configured to project a patterned radiation beam onto a target portion of the substrate;
a liquid confinement structure configured to provide a liquid between a final element of the projection system and the substrate during projection; and
a closing member configured to be coupled to the liquid confinement structure,
wherein the apparatus is configured to transfer the closing member between the first and second tables via the liquid confinement structure.
42. The lithographic apparatus of claim 41, wherein each of the first and second tables has a receptacle configured to receive the closing member.
43. The lithographic apparatus of claim 41, wherein the liquid confinement structure is configured to couple with the closing member.
44. The lithographic apparatus of claim 41, further comprising a displacement mechanism configured to move the closing member from at least one of the tables.
45. A lithographic apparatus comprising:
a first table constructed to hold a substrate;
a second table;
a projection system configured to project a patterned radiation beam onto a target portion of the substrate;
a liquid confinement structure configured to provide a liquid between a final element of the projection system and the substrate during projection; and
a controller configured to cause the first table to move to a position underneath the projection system for exposure and cause transfer of a closing member from the first table to the liquid confinement structure after exposure, and configured to cause the second table to move to a position underneath the projection system and cause transfer of the closing member from the liquid confinement structure to the second table.
46. The lithographic apparatus of claim 45, constructed and arranged to expose a substrate on the second table.
47. A device manufacturing method of exposing, using a projection system, a substrate supported by a first table; the exposure occurring by the projection of a patterned beam through a liquid which is contained by a liquid confinement structure onto the substrate, the method comprising:
moving the first table;
moving a second table with respect to the first table; and
transferring a closing member between the first table and the second table via the liquid confinement structure.
48. The method of claim 47, comprising moving the first table or the second table to a position such that a closing member is positioned under the liquid confinement structure and then coupling the closing member to the liquid confinement structure.
49. The method of claim 47, comprising moving the first table or the second table to a position under the liquid confinement structure and the closing member coupled to the liquid confinement structure and then transferring the closing member from the liquid confinement structure to the first or second table positioned under the liquid confinement structure.
50. A lithographic apparatus for exposing a substrate via a projection system and a liquid, the apparatus comprising:
a first table constructed to hold a substrate;
a second table; and
a closing member arranged to be transferred to and from the first and second tables.
51. The lithographic apparatus of claim 50, further comprising a liquid confinement structure configured to keep liquid between the projection system and the substrate and/or the closing member.
52. The lithographic apparatus of claim 51, wherein the closing member is arranged to be transferred to and from the liquid confinement structure.
53. The lithographic apparatus of claim 51, configured to provide a gas seal between the liquid confinement structure and the substrate and/or the closing member to confine the liquid.
US12/506,643 2004-11-12 2009-07-21 Lithographic apparatus and device manufacturing method Abandoned US20090279064A1 (en)

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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG2012031209A (en) 2003-04-11 2015-07-30 Nippon Kogaku Kk Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
KR101148811B1 (en) 2003-06-19 2012-05-24 가부시키가이샤 니콘 Exposure device and device producing method
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
TWI649790B (en) 2004-11-18 2019-02-01 日商尼康股份有限公司 Position measurement method, position control method, measurement method, loading method, exposure method and exposure device, and element manufacturing method
US7403261B2 (en) * 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
CN101258581B (en) * 2005-09-09 2011-05-11 株式会社尼康 Exposure apparatus, exposure method, and device production method
US7755742B2 (en) * 2005-10-11 2010-07-13 Asml Netherlands B.V. Lithographic apparatus with mounted sensor
US7420194B2 (en) 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
JP5089143B2 (en) * 2006-11-20 2012-12-05 キヤノン株式会社 Immersion exposure equipment
US8040490B2 (en) * 2006-12-01 2011-10-18 Nikon Corporation Liquid immersion exposure apparatus, exposure method, and method for producing device
US8013975B2 (en) * 2006-12-01 2011-09-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20080138631A1 (en) * 2006-12-06 2008-06-12 International Business Machines Corporation Method to reduce mechanical wear of immersion lithography apparatus
US7728952B2 (en) * 2007-01-25 2010-06-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for closing plate take-over in immersion lithography
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
NL1036033A1 (en) * 2007-10-10 2009-04-15 Asml Netherlands Bv Method of transferring a substrate, transfer system and lithographic projection apparatus.
US8149387B2 (en) * 2007-10-10 2012-04-03 Asml Netherlands B.V. Method of placing a substrate, method of transferring a substrate, support system and lithographic projection apparatus
NL1036025A1 (en) * 2007-10-10 2009-04-15 Asml Netherlands Bv Method of transferring a substrate, transfer system and lithographic projection apparatus.
US8154709B2 (en) * 2007-10-10 2012-04-10 Asml Netherlands B.V. Method of placing a substrate, method of transferring a substrate, support system and lithographic projection apparatus
US8451425B2 (en) * 2007-12-28 2013-05-28 Nikon Corporation Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method
EP2128703A1 (en) 2008-05-28 2009-12-02 ASML Netherlands BV Lithographic Apparatus and a Method of Operating the Apparatus
US8715518B2 (en) 2011-10-12 2014-05-06 Intermolecular, Inc. Gas barrier with vent ring for protecting a surface region from liquid
US9016289B2 (en) 2011-11-28 2015-04-28 Intermolecular, Inc. System and method for reducing particles and marks on wafer surface following reactor processing
US8883607B2 (en) 2011-12-27 2014-11-11 Intermolecular, Inc. Full wafer processing by multiple passes through a combinatorial reactor
CN105739245B (en) * 2014-12-12 2018-12-14 上海微电子装备(集团)股份有限公司 A kind of immersion lithographic machine submergence unit collision prevention device and method

Citations (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573975A (en) * 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
US3648587A (en) * 1967-10-20 1972-03-14 Eastman Kodak Co Focus control for optical instruments
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4390273A (en) * 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
US4396705A (en) * 1980-09-19 1983-08-02 Hitachi, Ltd. Pattern forming method and pattern forming apparatus using exposures in a liquid
US4480910A (en) * 1981-03-18 1984-11-06 Hitachi, Ltd. Pattern forming apparatus
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4861162A (en) * 1985-05-16 1989-08-29 Canon Kabushiki Kaisha Alignment of an object
US5040020A (en) * 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
US5537186A (en) * 1993-08-03 1996-07-16 Canon Kabushiki Kaisha Movable stage mechanism and exposure apparatus using the same
US5553994A (en) * 1993-07-16 1996-09-10 Semiconductor Systems, Inc. Thermal process module for substrate coat/develop system
US5610683A (en) * 1992-11-27 1997-03-11 Canon Kabushiki Kaisha Immersion type projection exposure apparatus
US5715039A (en) * 1995-05-19 1998-02-03 Hitachi, Ltd. Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US5923408A (en) * 1996-01-31 1999-07-13 Canon Kabushiki Kaisha Substrate holding system and exposure apparatus using the same
US6040675A (en) * 1996-06-07 2000-03-21 Nikon Corporation Supporting apparatus using magnetic power
US6236634B1 (en) * 1996-08-26 2001-05-22 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US6305677B1 (en) * 1999-03-30 2001-10-23 Lam Research Corporation Perimeter wafer lifting
US20020020821A1 (en) * 2000-08-08 2002-02-21 Koninklijke Philips Electronics N.V. Method of manufacturing an optically scannable information carrier
US6400445B2 (en) * 1994-02-22 2002-06-04 Nikon Corporation Method and apparatus for positioning substrate
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
US6496350B2 (en) * 2000-06-20 2002-12-17 Nikon Corporation Electrostatic wafer chucks and charged-particle-beam exposure apparatus comprising same
US6560032B2 (en) * 2000-03-27 2003-05-06 Olympus Optical Co., Ltd. Liquid immersion lens system and optical apparatus using the same
US20030123040A1 (en) * 2001-11-07 2003-07-03 Gilad Almogy Optical spot grid array printer
US6593995B1 (en) * 2002-04-12 2003-07-15 Xerox Corporation Dual mode document scanner with variable platen level transition
US6600547B2 (en) * 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
US6603130B1 (en) * 1999-04-19 2003-08-05 Asml Netherlands B.V. Gas bearings for use with vacuum chambers and their application in lithographic projection apparatuses
US20030174408A1 (en) * 2002-03-08 2003-09-18 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6633365B2 (en) * 2000-12-11 2003-10-14 Nikon Corporation Projection optical system and exposure apparatus having the projection optical system
US20040000627A1 (en) * 2002-06-28 2004-01-01 Carl Zeiss Semiconductor Manufacturing Technologies Ag Method for focus detection and an imaging system with a focus-detection system
US20040046952A1 (en) * 2000-02-18 2004-03-11 Canon Kabushiki Kaisha Supporting system in exposure apparatus
US20040075895A1 (en) * 2002-10-22 2004-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US20040109237A1 (en) * 2002-12-09 2004-06-10 Carl Zeiss Smt Ag Projection objective, especially for microlithography, and method for adjusting a projection objective
US20040114117A1 (en) * 2002-11-18 2004-06-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040119954A1 (en) * 2002-12-10 2004-06-24 Miyoko Kawashima Exposure apparatus and method
US20040125351A1 (en) * 2002-12-30 2004-07-01 Krautschik Christof Gabriel Immersion lithography
US20040135099A1 (en) * 2002-11-29 2004-07-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040136494A1 (en) * 2002-11-12 2004-07-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040160582A1 (en) * 2002-11-12 2004-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040165159A1 (en) * 2002-11-12 2004-08-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040207824A1 (en) * 2002-11-12 2004-10-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040211920A1 (en) * 2002-11-12 2004-10-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040263809A1 (en) * 2003-06-27 2004-12-30 Canon Kabushiki Kaisha Immersion exposure technique
US20050132914A1 (en) * 2003-12-23 2005-06-23 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US20060023186A1 (en) * 2003-04-11 2006-02-02 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US7057702B2 (en) * 2004-06-23 2006-06-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7075618B2 (en) * 2001-10-17 2006-07-11 Canon Kabushiki Kaisha Apparatus control system, apparatus control method, semiconductor exposure apparatus, semiconductor exposure apparatus control method and semiconductor device manufacturing method
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119876B2 (en) * 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7545481B2 (en) * 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221563C (en)
DE206607C (en)
DE242880C (en)
DE224448C (en)
EP0023231B1 (en) 1979-07-27 1982-08-11 Tabarelli, Werner, Dr. Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
FR2474708B1 (en) 1980-01-24 1987-02-20 Dme HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS
JPS58202448A (en) 1982-05-21 1983-11-25 Hitachi Ltd Exposing device
JPS6265326A (en) 1985-09-18 1987-03-24 Hitachi Ltd Exposure device
JPS62121417A (en) 1985-11-22 1987-06-02 Hitachi Ltd Liquid-immersion objective lens device
JPS63157419A (en) 1986-12-22 1988-06-30 Toshiba Corp Fine pattern transfer apparatus
JPH0831513B2 (en) * 1988-02-22 1996-03-27 株式会社ニコン Substrate suction device
JPH03209479A (en) 1989-09-06 1991-09-12 Sanee Giken Kk Exposure method
JPH04305915A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH04305917A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH06124873A (en) 1992-10-09 1994-05-06 Canon Inc Liquid-soaking type projection exposure apparatus
JP2520833B2 (en) 1992-12-21 1996-07-31 東京エレクトロン株式会社 Immersion type liquid treatment device
JPH07220990A (en) 1994-01-28 1995-08-18 Hitachi Ltd Pattern forming method and exposure apparatus therefor
JPH10107119A (en) * 1996-09-30 1998-04-24 Canon Inc Inline processing system and production method of device
JP3612920B2 (en) 1997-02-14 2005-01-26 ソニー株式会社 Exposure apparatus for producing an optical recording medium master
JPH10255319A (en) 1997-03-12 1998-09-25 Hitachi Maxell Ltd Master disk exposure device and method therefor
JPH10270535A (en) * 1997-03-25 1998-10-09 Nikon Corp Moving stage device and circuit-device manufacture using the same
JP3747566B2 (en) 1997-04-23 2006-02-22 株式会社ニコン Immersion exposure equipment
JP3817836B2 (en) 1997-06-10 2006-09-06 株式会社ニコン EXPOSURE APPARATUS, ITS MANUFACTURING METHOD, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
JPH11176727A (en) 1997-12-11 1999-07-02 Nikon Corp Projection aligner
EP1039511A4 (en) 1997-12-12 2005-03-02 Nikon Corp Projection exposure method and projection aligner
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (en) 1998-08-11 2000-02-25 Nikon Corp Projection aligner and exposure method
JP4504479B2 (en) 1999-09-21 2010-07-14 オリンパス株式会社 Immersion objective lens for microscope
CN100462844C (en) 2002-08-23 2009-02-18 株式会社尼康 Projection optical system and method for photolithography and exposure apparatus and method using same
EP1571701A4 (en) 2002-12-10 2008-04-09 Nikon Corp Exposure apparatus and method for manufacturing device
SG165169A1 (en) 2002-12-10 2010-10-28 Nikon Corp Liquid immersion exposure apparatus
WO2004053956A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
KR20050085235A (en) 2002-12-10 2005-08-29 가부시키가이샤 니콘 Exposure system and device producing method
JP4232449B2 (en) 2002-12-10 2009-03-04 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method
AU2003289272A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
WO2004053952A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
EP1571700A4 (en) 2002-12-10 2007-09-12 Nikon Corp Optical device and projection exposure apparatus using such optical device
JP4352874B2 (en) 2002-12-10 2009-10-28 株式会社ニコン Exposure apparatus and device manufacturing method
SG158745A1 (en) 2002-12-10 2010-02-26 Nikon Corp Exposure apparatus and method for producing device
DE10257766A1 (en) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Method for setting a desired optical property of a projection lens and microlithographic projection exposure system
WO2004053951A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
KR100967835B1 (en) 2002-12-13 2010-07-05 코닌클리케 필립스 일렉트로닉스 엔.브이. Liquid removal in a method and device for irradiating spots on a layer
EP1584089B1 (en) 2002-12-19 2006-08-02 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
JP4604452B2 (en) * 2003-02-26 2011-01-05 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
JP4444743B2 (en) 2004-07-07 2010-03-31 キヤノン株式会社 Exposure apparatus and device manufacturing method
JP4747545B2 (en) 2004-09-30 2011-08-17 株式会社ニコン Stage apparatus, exposure apparatus, and device manufacturing method

Patent Citations (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648587A (en) * 1967-10-20 1972-03-14 Eastman Kodak Co Focus control for optical instruments
US3573975A (en) * 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
US4396705A (en) * 1980-09-19 1983-08-02 Hitachi, Ltd. Pattern forming method and pattern forming apparatus using exposures in a liquid
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4390273A (en) * 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
US4480910A (en) * 1981-03-18 1984-11-06 Hitachi, Ltd. Pattern forming apparatus
US4861162A (en) * 1985-05-16 1989-08-29 Canon Kabushiki Kaisha Alignment of an object
US5040020A (en) * 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
US5610683A (en) * 1992-11-27 1997-03-11 Canon Kabushiki Kaisha Immersion type projection exposure apparatus
US5553994A (en) * 1993-07-16 1996-09-10 Semiconductor Systems, Inc. Thermal process module for substrate coat/develop system
US5537186A (en) * 1993-08-03 1996-07-16 Canon Kabushiki Kaisha Movable stage mechanism and exposure apparatus using the same
US6400445B2 (en) * 1994-02-22 2002-06-04 Nikon Corporation Method and apparatus for positioning substrate
US5715039A (en) * 1995-05-19 1998-02-03 Hitachi, Ltd. Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns
US5923408A (en) * 1996-01-31 1999-07-13 Canon Kabushiki Kaisha Substrate holding system and exposure apparatus using the same
US6040675A (en) * 1996-06-07 2000-03-21 Nikon Corporation Supporting apparatus using magnetic power
US6236634B1 (en) * 1996-08-26 2001-05-22 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
US6191429B1 (en) * 1996-10-07 2001-02-20 Nikon Precision Inc. Projection exposure apparatus and method with workpiece area detection
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6305677B1 (en) * 1999-03-30 2001-10-23 Lam Research Corporation Perimeter wafer lifting
US6603130B1 (en) * 1999-04-19 2003-08-05 Asml Netherlands B.V. Gas bearings for use with vacuum chambers and their application in lithographic projection apparatuses
US20040046952A1 (en) * 2000-02-18 2004-03-11 Canon Kabushiki Kaisha Supporting system in exposure apparatus
US6560032B2 (en) * 2000-03-27 2003-05-06 Olympus Optical Co., Ltd. Liquid immersion lens system and optical apparatus using the same
US6496350B2 (en) * 2000-06-20 2002-12-17 Nikon Corporation Electrostatic wafer chucks and charged-particle-beam exposure apparatus comprising same
US20020020821A1 (en) * 2000-08-08 2002-02-21 Koninklijke Philips Electronics N.V. Method of manufacturing an optically scannable information carrier
US20040021844A1 (en) * 2000-12-11 2004-02-05 Nikon Corporation Projection optical system and exposure apparatus having the projection optical system
US6633365B2 (en) * 2000-12-11 2003-10-14 Nikon Corporation Projection optical system and exposure apparatus having the projection optical system
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
US6600547B2 (en) * 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
US7075618B2 (en) * 2001-10-17 2006-07-11 Canon Kabushiki Kaisha Apparatus control system, apparatus control method, semiconductor exposure apparatus, semiconductor exposure apparatus control method and semiconductor device manufacturing method
US20030123040A1 (en) * 2001-11-07 2003-07-03 Gilad Almogy Optical spot grid array printer
US20030174408A1 (en) * 2002-03-08 2003-09-18 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6593995B1 (en) * 2002-04-12 2003-07-15 Xerox Corporation Dual mode document scanner with variable platen level transition
US20040000627A1 (en) * 2002-06-28 2004-01-01 Carl Zeiss Semiconductor Manufacturing Technologies Ag Method for focus detection and an imaging system with a focus-detection system
US20040075895A1 (en) * 2002-10-22 2004-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US20040165159A1 (en) * 2002-11-12 2004-08-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040211920A1 (en) * 2002-11-12 2004-10-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040207824A1 (en) * 2002-11-12 2004-10-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040136494A1 (en) * 2002-11-12 2004-07-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040160582A1 (en) * 2002-11-12 2004-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040114117A1 (en) * 2002-11-18 2004-06-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040135099A1 (en) * 2002-11-29 2004-07-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040109237A1 (en) * 2002-12-09 2004-06-10 Carl Zeiss Smt Ag Projection objective, especially for microlithography, and method for adjusting a projection objective
US20040119954A1 (en) * 2002-12-10 2004-06-24 Miyoko Kawashima Exposure apparatus and method
US20040125351A1 (en) * 2002-12-30 2004-07-01 Krautschik Christof Gabriel Immersion lithography
US20060033894A1 (en) * 2003-04-11 2006-02-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20060023186A1 (en) * 2003-04-11 2006-02-02 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20040263809A1 (en) * 2003-06-27 2004-12-30 Canon Kabushiki Kaisha Immersion exposure technique
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7545481B2 (en) * 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050132914A1 (en) * 2003-12-23 2005-06-23 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7057702B2 (en) * 2004-06-23 2006-06-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119876B2 (en) * 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

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