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US11635555B2 - Colour film sheet and fabricating method therefor, colour film substrate, and display apparatus - Google Patents

Colour film sheet and fabricating method therefor, colour film substrate, and display apparatus Download PDF

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US11635555B2
US11635555B2 US16/641,757 US201816641757A US11635555B2 US 11635555 B2 US11635555 B2 US 11635555B2 US 201816641757 A US201816641757 A US 201816641757A US 11635555 B2 US11635555 B2 US 11635555B2
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light
wavelength
color filter
light emitting
emitting layer
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US20200393600A1 (en
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Jing Yu
Gang Yu
Yu Ju Chen
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/206—Filters comprising particles embedded in a solid matrix
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01791—Quantum boxes or quantum dots
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/02—Frequency-changing of light, e.g. by quantum counters
    • H01L33/50—
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials
    • H01L33/507—

Definitions

  • Embodiments of the present disclosure relate to a color filter, a method for manufacturing a color filter, a color filter substrate, and a display device.
  • a liquid crystal display device may include a backlight module, an array substrate, a color filter substrate, and a liquid crystal layer located between the array substrate and the color filter substrate.
  • the white light emitted by the backlight module passes through the color filter on the color filter substrate to display various colors.
  • the common color filter is to disperse the dye into the negative photoresist and absorb light of other wave bands to display pure color light (e.g., red light, green light, or blue light).
  • the color filter that implements displaying the pure color light by absorbing the light of other wave bands greatly reduces the utilization of the backlight.
  • Quantum dots are a type of nanoparticles composed of elements of group II-VI or group III-V.
  • the particle size of the quantum dot is generally between 1 nm to 20 nm. Because domains of electrons and holes are limited by quanta, the continuous energy band structure becomes a discrete energy level structure with molecular characteristics, and can emit fluorescence when stimulated.
  • the emission spectrum of the quantum dot can be controlled by changing the size of the quantum dot.
  • the emission spectrum of the quantum dot can cover the entire visible light region. Therefore, the quantum dot color filter can be manufactured by utilizing the light emitting characteristics of the quantum dot.
  • the color filter includes a first quantum dot light emitting layer, having a light incident surface, and a first reflective layer, on a side of the first quantum dot light emitting layer away from the light incident surface.
  • the first quantum dot light emitting layer includes a plurality of first quantum dots, the first quantum dots are configured to be stimulated by light of a first wavelength from the light incident surface to emit light of a second wavelength, and the first reflective layer is configured to transmit the light of the second wavelength and reflect the light of the first wavelength.
  • the color filter provided by an embodiment of the present disclosure further includes: a second quantum dot light emitting layer between the first quantum dot light emitting layer and the first reflective layer.
  • the second quantum dot light emitting layer includes a plurality of second quantum dots and a plurality of light absorbing materials, the second quantum dots are configured to be stimulated by light of the first wavelength from the light incident surface to emit light of the second wavelength, and the light absorbing materials are configured to absorb the light of the first wavelength.
  • the color filter provided by an embodiment of the present disclosure further includes: a second reflective layer on a side, where the light incident surface is, of the first quantum dot light emitting layer, and the second reflective layer is configured to transmit the light of the first wavelength and reflect the light of the second wavelength.
  • the light of the first wavelength is blue light
  • the light of the second wavelength is red light or green light
  • the first reflective layer includes a plurality of first sub-reflective layers in a sequential arrangement, each of the first sub-reflective layers includes a first refractive index layer and a second refractive index layer which are sequentially arranged in a direction from the light incident surface to the first reflective layer, and a refractive index of the first refractive index layer is greater than a refractive index of the second refractive index layer.
  • the first quantum dot light emitting layer is in contact with the second quantum dot light emitting layer.
  • the second reflective layer includes a plurality of second sub-reflective layers in a sequential arrangement, each of the second sub-reflective layers includes a third refractive index layer and a fourth refractive index layer which are sequentially arranged in a direction from the light incident surface to the first reflective layer, and a refractive index of the third refractive index layer is less than a refractive index of the fourth refractive index layer.
  • a thickness of the first reflective layer is in a range of 400 nm to 600 nm.
  • a particle size of each of the first quantum dots is in a range of 7 nm to 10 nm.
  • At least an embodiment of the present disclosure further provides a color filter substrate, including the color filter provided by any one of the embodiments of the present disclosure.
  • the color filter substrate provided by an embodiment of the present disclosure further includes: a blue filter region, and the blue filter region is configured to transmit blue light.
  • At least an embodiment of the present disclosure further provides a display device, including the color filter provided by any one of the embodiments of the present disclosure.
  • At least an embodiment of the present disclosure further provides a method for manufacturing a color filter, and the method includes: mixing a plurality of first quantum dots into a first organic solvent to form a first light emitting layer material; using the first light emitting layer material to form a first quantum dot light emitting layer, where the first quantum dot light emitting layer has a light incident surface, and the first quantum dots are configured to be stimulated by light of a first wavelength to emit light of a second wavelength; and forming a first reflective layer on a side of the first quantum dot light emitting layer away from the light incident surface, where the first reflective layer is configured to transmit the light of the second wavelength and reflect the light of the first wavelength.
  • the method for manufacturing the color filter further includes: mixing a plurality of second quantum dots and a plurality of light absorbing materials into a second organic solvent to form a second light emitting layer material, where the second quantum dots are configured to be stimulated by light of the first wavelength to emit light of the second wavelength, and the light absorbing materials are configured to absorb the light of the first wavelength; and using the second light emitting layer material to form a second quantum dot light emitting layer between the first quantum dot light emitting layer and the first reflective layer.
  • a ratio of a mass percentage of the second quantum dots to a mass percentage of the light absorbing materials in the second light emitting layer material is in a range of 1 to 2.
  • the method for manufacturing the color filter provided by an embodiment of the present disclosure further includes: forming a second reflective layer on a side, where the light incident surface is, of the first quantum dot light emitting layer, and the second reflective layer is configured to transmit the light of the first wavelength and reflect the light of the second wavelength.
  • the first light emitting layer material further includes a resin, a photoinitiator, and an additive, and a total mass percentage of the first quantum dots, the resin, the photoinitiator, and the additive in the first light emitting layer material is in a range of 15% to 30%.
  • a mass percentage of the first quantum dots in the first light emitting layer material is in a range of 5% to 10%, and a mass percentage of the resin in the first light emitting layer material is in a range of 5% to 25%.
  • FIG. 1 is a schematic structural diagram of a color filter
  • FIG. 2 is a schematic structural diagram of a color filter provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of another color filter provided by an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of further still another color filter provided by an embodiment of the present disclosure.
  • FIG. 5 is a schematic structural diagram of further still another color filter provided by an embodiment of the present disclosure.
  • FIG. 6 is a schematic structural diagram of further still another color filter provided by an embodiment of the present disclosure.
  • FIG. 7 is a schematic planar diagram of a color filter substrate provided by an embodiment of the present disclosure.
  • FIG. 8 is a flowchart of a method for manufacturing a color filter provided by an embodiment of the present disclosure.
  • quantum dots can be added to photoresist instead of dyes because of characteristics such as photoluminescence and narrow half-peak width.
  • the solvent system of photoresist is generally propylene glycol monomethyl ether acetate (PGMEA).
  • PGMEA propylene glycol monomethyl ether acetate
  • the PGMEA is an organic solvent with a strong polarity, and the ligands of general quantum dot materials are mostly non-polar ligands such as oleic acid. Therefore, in that kind of quantum dot photoresist, the ligand of the quantum dot needs to be replaced by a polar ligand.
  • the chain length of the general polar ligand is relatively short, and there may be problems such as quantum dot aggregation and low quantum dot doping concentration.
  • the quantum dots may further react with the photoinitiator or other additives in the photoresist, and it is easy to cause the aggregation and quenching of the quantum dots where the quantum dot concentration is high. Therefore, the quantum dot concentration in the photoresist cannot be too high. However, it is easy to cause a small leakage of excitation light where the quantum dot concentration is low, thereby affecting the color purity.
  • FIG. 1 is a schematic structural diagram of a color filter.
  • the color filter includes a base substrate 101 , a quantum dot light emitting layer 110 on the base substrate 101 , and a cover layer 190 on a side, away from the base substrate 101 , of the quantum dot light emitting layer 110 .
  • the quantum dot light emitting layer 110 has a light incident surface 111 on a side close to the cover layer 190 .
  • the quantum dot light emitting layer 110 includes a plurality of quantum dots 115 .
  • the quantum dots 115 can be stimulated by blue light emitted from the light incident surface 111 and emit red light or green light.
  • the quantum dot concentration in the quantum dot light emitting layer 110 cannot be too high, and the blue light cannot be completely converted into the red light or green light, so that part of the blue light leaks, and the color purity of the color filter is affected.
  • the embodiments of the present disclosure provide a color filter, a method for manufacturing a color filter, a color filter substrate, and a display device.
  • the color filter includes a first quantum dot light emitting layer and a first reflective layer.
  • the first quantum dot light emitting layer has a light incident surface, and the first reflective layer is located on a side of the first quantum dot light emitting layer away from the light incident surface.
  • the first quantum dot light emitting layer includes a plurality of first quantum dots, the first quantum dots are configured to be stimulated by light of a first wavelength from the light incident surface to emit light of a second wavelength, and the first reflective layer is configured to transmit the light of the second wavelength and reflect the light of the first wavelength.
  • the light of the first wavelength emitted from the light incident surface can stimulate the first quantum dots in the first quantum dot light emitting layer to emit the light of the second wavelength, the light of the second wavelength is emitted through the first reflective layer, and the light of the first wavelength which is not converted by the first quantum dots in the first quantum dot light emitting layer is reflected by the first reflective layer and cannot be emitted through the first reflective layer, so that the color purity of the light emitted by the color filter is high.
  • FIG. 2 is a schematic structural diagram of a color filter according to the embodiment.
  • the color filter 100 includes a first quantum dot light emitting layer 110 and a first reflective layer 130 .
  • the first quantum dot light emitting layer 110 has a light incident surface 111 .
  • the first quantum dot light emitting layer 110 includes a plurality of first quantum dots 115 , and the first quantum dots 115 can be stimulated by light (as indicated by the solid line in FIG. 2 ) of a first wavelength from the light incident surface 111 to emit light (as indicated by the dotted line in FIG. 2 ) of a second wavelength, thereby allowing the color filter to emit the light of the second wavelength.
  • the first reflective layer 130 is located on a side of the first quantum dot light emitting layer 110 away from the light incident surface 111 , and can transmit the light of the second wavelength and reflect the light of the first wavelength.
  • the first wavelength and second wavelength described above may not only represent a specific wavelength value, but also may represent a wavelength range.
  • the light of the first wavelength may be blue light
  • the light of the second wavelength may be red light or green light.
  • the light of the first wavelength includes, but is not limited to, the blue light
  • the light of the second wavelength includes, and is not limited to, the red light.
  • the light of the first wavelength can be provided by a backlight source.
  • the first reflective layer 130 located on the side, away from the light incident surface 111 , of the first quantum dot light emitting layer 110 can transmit the light of the second wavelength and reflect the light of the first wavelength. Therefore, the first reflective layer 130 can prevent light of the first wavelength which is not converted by the first quantum dots 115 from being emitted through the first reflective layer 130 , thereby improving the color purity of the emitting light of the color filter. For example, where the light of the first wavelength is blue light and the light of the second wavelength is red light, as illustrated in FIG.
  • part of the blue light enters the first quantum dot light emitting layer 110 from the light incident surface 111 of the first quantum dot light emitting layer 110 and stimulates the first quantum dots 115 to emit red light, and part of the red light is emitted through the first reflective layer 130 . Because the concentration of the first quantum dots 115 in the first quantum dot light emitting layer 110 is not too high, etc., part of the blue light is not converted by the first quantum dots 115 , and the blue light that is not converted by the first quantum dots 115 is reflected by the first reflective layer 130 and cannot be emitted through the first reflective layer 130 , thereby improving the color purity of red light of the color filter.
  • the thickness of the first reflective layer is 400 nm to 600 nm. Where the thickness of the first reflective layer is in a range of 400 nm to 600 nm, the first reflective layer has both a higher reflectivity for the light of the first wavelength and a higher transmittance for the light of the second wavelength.
  • the color filter 100 further includes a base substrate 101 on a side, away from the light incident surface 111 , of the first reflective layer 130 to support the first quantum dot light emitting layer 110 and the first reflective layer 130 .
  • the base substrate 101 may be a glass substrate.
  • the color filter 100 further includes a cover layer 190 on a side, where the light incident surface 111 is, of the first quantum dot light emitting layer 110 to protect the first quantum dot light emitting layer 110 described above.
  • the material of the first quantum dots can be selected from II-VI group materials such as CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, etc., III-V group materials such as GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, AlSb, etc., and other materials.
  • II-VI group materials such as CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, etc.
  • III-V group materials such as GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, AlSb, etc., and other materials.
  • the light emitting wavelength or wave band of the quantum dots can be controlled by controlling the particle size of the first quantum dots.
  • the first quantum dots can emit red light where the size of the first quantum dots is mainly 9 nm to 10 nm, and the first quantum dots can emit green light where the size of the first quantum dots is mainly 7 nm.
  • FIG. 3 is a schematic structural diagram of another color filter.
  • the color filter further includes a second quantum dot light emitting layer 120 located between the first quantum dot light emitting layer 110 and the first reflective layer 130 .
  • the second quantum dot light emitting layer 120 includes a plurality of second quantum dots 125 and a plurality of light absorbing materials 127 .
  • the second quantum dots 125 can be stimulated by light (as indicated by the solid line in FIG. 3 ) of the first wavelength from the light incident surface 111 to emit light (as indicated by the dotted line in FIG. 3 ) of the second wavelength, and the light absorbing materials 127 can absorb the light of the first wavelength.
  • the color filter can allow light of the first wavelength, which is not converted by the first quantum dots 115 in the first quantum dot light emitting layer 110 , to be converted into light of the second wavelength by the second quantum dots 125 in the second quantum dot light emitting layer 120 additionally provided, thereby further improving the utilization efficiency of the light of the first wavelength from the light incident surface 111 and reducing the light of the first wavelength through the first reflective layer 130 ; in another aspect, the color filter can absorb the light of the first wavelength, which is not converted by the first quantum dots 115 in the first quantum dot light emitting layer 110 , through the light absorbing materials 127 in the second quantum dot light emitting layer 120 additionally provided, thereby further reducing the light of the first wavelength through the first reflective layer 130 . Therefore, the color filter further improves the color purity of the emitting light, and improves the utilization efficiency of the light of the first wavelength from the light incident surface.
  • the size of the light absorbing materials and the size of the second quantum dots are on an order of magnitude, thereby facilitating a more even distribution of the light absorbing materials and the second quantum dots and preventing aggregation and the like.
  • the light absorbing materials may be a dye that can absorb light of the first wavelength.
  • the present disclosure includes but is not limited to this.
  • the material of the second quantum dots can be selected from II-VI group materials such as CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, etc., III-V group materials such as GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, AlSb, etc., and other materials. It should be noted that the material of the second quantum dots may be the same as that of the first quantum dots.
  • the light emitting wavelength or wave band of the quantum dots can be controlled by controlling the particle size of the second quantum dots.
  • the second quantum dots can emit red light where the size of the second quantum dots is mainly 9 nm to 10 nm, and the second quantum dots can emit green light where the size of the second quantum dots is mainly 7 nm.
  • FIG. 4 is a schematic structural diagram of further still another color filter.
  • the color filter further includes a second reflective layer 140 on a side, where the light incident surface 111 is, of the first quantum dot light emitting layer 110 .
  • the second reflective layer 140 can transmit light (as indicated by the solid line in FIG. 4 ) of the first wavelength and reflect light (as indicated by the dotted line in FIG. 4 ) of the second wavelength.
  • FIG. 4 illustrates a schematic structural diagram of further still another color filter.
  • the color filter further includes a second reflective layer 140 on a side, where the light incident surface 111 is, of the first quantum dot light emitting layer 110 .
  • the second reflective layer 140 can transmit light (as indicated by the solid line in FIG. 4 ) of the first wavelength and reflect light (as indicated by the dotted line in FIG. 4 ) of the second wavelength.
  • the first quantum dots or the second quantum dots after the first quantum dots or the second quantum dots are stimulated by the light of the first wavelength, the first quantum dots or the second quantum dots emit the light of the second wavelength all around, and the second reflective layer 140 on the side, where the light incident surface 111 is, of the first quantum dot light emitting layer 110 allows the light emitted to the second reflective layer 140 to be reflected in a direction away from the light incident surface 111 and finally emit through the first reflective layer 130 , thereby reducing the loss of the light of the second wavelength and greatly improving the conversion efficiency of the color filter to the light of the first wavelength.
  • the second reflective layer can also be implemented by using the principle of the antireflection film, thereby improving the transmittance of the light of the first wavelength.
  • first reflective layer and the second reflective layer in the embodiment may be implemented by a structure including a high refractive index layer and a low refractive index layer.
  • FIG. 5 is a schematic structural diagram of further still another color filter.
  • the first reflective layer 130 includes a plurality of first sub-reflective layers 1300 in a sequential arrangement, each of the first sub-reflective layers 1300 includes a first refractive index layer 131 and a second refractive index layer 132 which are sequentially arranged in a direction from the light incident surface 111 to the first reflective layer 130 , and a refractive index of the first refractive index layer 131 is greater than a refractive index of the second refractive index layer 132 .
  • the first sub-reflective layer 1300 light of the first wavelength and light of the second wavelength transmit from the first refractive index layer 131 with a relatively large refractive index to the second refractive index layer 132 with a relatively small refractive index, so that the optical thicknesses of the first refractive index layer and the second refractive index layer can be set according to the principle of Braggs reflection, so as to transmit the light of the second wavelength and reflect the light of the first wavelength.
  • FIG. 6 is a schematic structural diagram of further still another color filter.
  • the second reflective layer 140 includes a plurality of second sub-reflective layers 1400 in a sequential arrangement, each of the second sub-reflective layers 1400 includes a third refractive index layer 141 and a fourth refractive index layer 142 which are sequentially arranged in a direction from the light incident surface 111 to the first reflective layer 130 , and a refractive index of the third refractive index layer 141 is less than a refractive index of the fourth refractive index layer 142 .
  • light of the first wavelength transmits from the third refractive index layer 141 with a relatively small refractive index to the fourth refractive index layer 142 with a relatively large refractive index
  • light of the second wavelength transmits from the fourth refractive index layer 142 with a relatively large refractive index to the third refractive index layer 141 with a relatively small refractive index
  • the optical thicknesses of the third refractive index layer and the fourth refractive index layer can be set according to the principle of the antireflection film to implement the transmission of the light of the first wavelength, thereby increasing the transmittance of the light of the first wavelength, and the optical thicknesses of the third refractive index layer and the fourth refractive index layer can also be set according to the principle of Braggs reflection to implement the reflection of the light of the second wavelength. It should be noted that computer simulation can be used to set reasonable optical thicknesses of the third refractive index layer and the fourth refractive index layer, so as to simultaneously transmit the light of the first wavelength and reflect the light of the second wavelength.
  • the specific optical thicknesses of the first refractive index layer, the second refractive index layer, the third refractive index layer, and the fourth refractive index layer can be obtained through calculation and simulation.
  • the thickness of the second reflective index layer is 400 nm to 600 nm. Where the thickness of the second reflective index layer is in a range of 400 nm to 600 nm, the second reflective index layer has both a higher transmittance for light of the first wavelength and a higher reflectivity for light of the second wavelength.
  • the materials of the first refractive index layer and the second refractive index layer may be titanium oxide and silicon oxide (TiO 2 /SiO 2 ), or zirconia and magnesium fluoride (ZrO 2 /MgF 2 ).
  • TiO 2 /SiO 2 titanium oxide and silicon oxide
  • ZrO 2 /MgF 2 zirconia and magnesium fluoride
  • the present disclosure includes, but is not limited to this, and the first refractive index layer and the second refractive index layer may also use other materials.
  • the materials of the third refractive index layer and the fourth refractive index layer may be silicon oxide and titanium oxide (SiO 2 /TiO 2 ), or magnesium fluoride and zirconia (MgF 2 /ZrO 2 ).
  • the present disclosure includes, but is not limited to this, and the third refractive index layer and the fourth refractive index layer may also use other materials.
  • the light of the first wavelength is blue light
  • the light of the second wavelength is red light or green light
  • the light of the first wavelength may also be other light, such as violet light, ultraviolet light, etc.
  • the light of the second wavelength may also be yellow light, etc.
  • the present disclosure includes but is not limited to this.
  • a micro-lens structure 109 may be provided on a side, away from the first quantum dot light emitting layer 110 , of the base substrate 101 , so as to control a light emitting range of the light of the second wavelength that is emitted.
  • the micro-lens structure described above may be formed by performing surface processing on the surface of the side, away from the first quantum dot light emitting layer, of the base substrate.
  • FIG. 7 is a schematic planar diagram of a color filter substrate.
  • the color filter substrate includes the color filter described in any one of the above examples. Therefore, the color filter substrate has a high light emitting color purity and can improve the color gamut of the display device using the color filter substrate, thereby allowing the display device using the color filter substrate to have a better image quality.
  • the color filter 100 may include a red color filter 1101 and a green color filter 1102 .
  • the red color filter 1101 can be used as a red filter
  • the green color filter 1102 can be used as a green filter.
  • the first quantum dots and the second quantum dots can be stimulated to emit red light
  • the first quantum dots and the second quantum dots can be stimulated to emit green light.
  • the color filter substrate further includes a blue filter region, and the blue filter region can transmit blue light.
  • the color filter substrate described above can be used in a display device with a blue backlight. It should be noted that where the backlight is blue light, the region, corresponding to the blue filter, of the color filter substrate, that is, the blue filter region, can be set to be transparent, and no quantum dot light emitting layer is provided as the blue filter.
  • the color filter substrate further includes a black matrix 200 around the color filter 100 .
  • An embodiment of the present disclosure further provides a display panel, and the display panel includes the color filter substrate described in any one of the above examples. Therefore, each sub-pixel in the display panel has a higher color purity, thereby improving the color gamut of the display device and allowing the display panel to have a better image quality.
  • the display panel further includes an array substrate opposite to the color filter substrate, and a liquid crystal layer disposed between the array substrate and the color filter substrate.
  • An embodiment of the present disclosure further provides a display device, and the display device includes the color filter described in any one of the above examples. Therefore, each sub-pixel in the display device has a higher color purity, thereby improving the color gamut of the display device and allowing the display device to have a better image quality.
  • the display device may be any electronic product with a display function, such as a mobile phone, a computer, a television, a notebook computer, a navigator, a wearable display device, etc.
  • the display device may be a liquid crystal display device or an organic light emitting diode display device, and the present disclosure is not limited in this aspect.
  • FIG. 8 is a flowchart of a method for manufacturing a color filter. As illustrated in FIG. 8 , the method for manufacturing the color filter includes steps S 401 to S 403 .
  • Step S 401 mixing a plurality of first quantum dots into a first organic solvent to form a first light emitting layer material.
  • the organic solvent may be propylene glycol monomethyl ether acetate (PGMEA).
  • PGMEA propylene glycol monomethyl ether acetate
  • Step S 402 using a first light emitting layer material to form a first quantum dot light emitting layer.
  • the first quantum dot light emitting layer has a light incident surface, and the first quantum dots are configured to be stimulated by light of a first wavelength from the light incident surface to emit light of a second wavelength.
  • a film layer of the first quantum dot material may be formed first, and then a first quantum dot light emitting layer is formed by a photolithography process.
  • the formation step of the first quantum dot layer is simple and the cost is low.
  • the present disclosure includes but is not limited to this, and the first light emitting layer material may also be used to form the first quantum dot light emitting layer by an inkjet printing process. It should be noted that when the inkjet printing process is used, the thickness of the film layer can be adjusted by adjusting the number of prints, the number of print drops, and the drop size.
  • Step S 403 forming a first reflective layer on a side of the first quantum dot light emitting layer away from the light incident surface.
  • the first reflective layer is configured to transmit the light of the second wavelength and reflect the light of the first wavelength.
  • the reflective layer can be formed by coating methods such as sputtering, vacuum evaporation, and ALD.
  • the first reflective layer located on the side of the first quantum dot light emitting layer away from the light incident surface can transmit the light of the second wavelength and reflect the light of the first wavelength. Therefore, the first reflective layer can prevent light of the first wavelength that is not converted by the first quantum dots from being emitted through the first reflective layer, thereby improving the color purity of the emitting light of the color filter.
  • the method for manufacturing the color filter further includes: mixing a plurality of second quantum dots and a plurality of light absorbing materials into a second organic solvent to form a second light emitting layer material, where the second quantum dots are configured to be stimulated by light of the first wavelength from the light incident surface to emit light of the second wavelength, and the light absorbing materials are configured to absorb the light of the first wavelength; and using the second light emitting layer material to form a second quantum dot light emitting layer between the first quantum dot light emitting layer and the first reflective layer.
  • the light of the first wavelength that is not converted by the first quantum dots in the first quantum dot light emitting layer can be converted into the light of the second wavelength by the second quantum dots in the second quantum dot light emitting layer additionally provided, thereby further improving the utilization efficiency of the light of the first wavelength from the light incident surface and reducing the light of the first wavelength emitted through the first reflective layer; and in another aspect, the light of the first wavelength that is not converted by the first quantum dots in the first quantum dot light emitting layer can also be absorbed by the light absorbing materials in the second quantum dot light emitting layer additionally provided, thereby further reducing the light of the first wavelength emitted through the first reflective layer. Therefore, the method for manufacturing the color filter further improves the color purity of the emitting light, and improves the utilization efficiency of the light of the first wavelength from the light incident surface.
  • the first organic solvent is immiscible with the second organic solvent, thereby preventing the second organic solvent from dissolving the first quantum dot light emitting layer when the second quantum dot photoresist is formed.
  • a plurality of film layers may be spin-coated to implement increasing the thickness of the first quantum dot light emitting layer or the second quantum dot light emitting layer.
  • the range of the thickness of the first quantum dot light emitting layer may be 1 ⁇ m to 3 ⁇ m, and the range of the thickness of the second quantum dot light emitting layer may be 1 ⁇ m to 3 ⁇ m.
  • the ratio of the mass percentage of the second quantum dots to the mass percentage of the light absorbing materials in the second light emitting layer material is in a range of 1 to 2, thereby efficiently absorbing or converting the light of the first wavelength to prevent the leakage of the light of the first wavelength.
  • the ratio of the mass percentage of the second quantum dots to the mass percentage of the light absorbing materials in the second light emitting layer material is 3:2, thereby maximally absorbing or converting the light of the first wavelength to prevent the leakage of the light of the first wavelength.
  • the method for manufacturing the color filter further includes: forming a second reflective layer on a side, where the light incident surface is, of the first quantum dot light emitting layer.
  • the second reflective layer can transmit the light of the first wavelength and reflect the light of the second wavelength.
  • the first quantum dots or the second quantum dots After the first quantum dots or the second quantum dots are stimulated by the light of the first wavelength, the first quantum dots or the second quantum dots emit the light of the second wavelength all around, and the second reflective layer on the side, where the light incident surface is, of the first quantum dot light emitting layer allows the light emitted to the second reflective layer to be reflected in a direction away from the light incident surface and finally emit through the first reflective layer, thereby reducing the loss of the light of the second wavelength and greatly improving the conversion efficiency of the color filter to the light of the first wavelength.
  • the second reflective layer can also be implemented by using the principle of the antireflection film, thereby improving the transmittance of the light of the first wavelength.
  • the first light emitting layer material further includes a resin, a photoinitiator, and an additive.
  • the first light emitting layer material can be suitable for the photolithography process, thereby simplifying the method for manufacturing the color filter.
  • the first light emitting layer material provided by the example can be compatible with methods such as photolithography, inkjet printing, etc.
  • the optical density value of the photolithography process can be in a range of 1.5 to 2.5.
  • the optical density value of the photolithography process can be 2.
  • the second light emitting layer material may also include a resin, a photoinitiator, and an additive.
  • the total mass percentage of the second quantum dots, the light absorbing materials, the resin, the photoinitiator, and the additive can be controlled in a range of 15% to 30%, thereby allowing the second light emitting layer material to be suitable for the photolithography process and simplifying the method for manufacturing the color filter.
  • additives described above are materials generally used in the photoresist for adjusting the viscosity and surface tension of the photoresist.
  • the total mass percentage of the first quantum dots, the resin, the photoinitiator, and additive can be controlled at 20%. Therefore, the first light emitting layer material is suitable for the photolithography process, and the method for manufacturing the color filter can be simplified.
  • the mass percentage of the first quantum dots can be adjusted to 5% to 10%, and the mass percentage of the resin can be adjusted to 5% to 25%. Therefore, in one aspect, the phenomenon such as the aggregation of the first quantum dots can be prevented, and in another aspect, a higher conversion efficiency of the light of the first wavelength can be obtained.
  • the first light emitting layer material can further be suitable for the photolithography process, thereby simplifying the method for manufacturing the color filter.
  • the mass percentage of the first quantum dots can be adjusted to 5%, and the mass percentage of the resin can be adjusted to 10%. Therefore, in one aspect, the phenomenon such as the aggregation of the first quantum dots can be prevented, and in another aspect, a higher conversion efficiency of the light of the first wavelength can be obtained.
  • the first light emitting layer material can further be suitable for the photolithography process, thereby simplifying the method for manufacturing the color filter.
  • the method for manufacturing the color filter further includes exposing and developing the first quantum dot light emitting layer and the second quantum dot light emitting layer, respectively, so as to obtain a patterned first quantum dot light emitting layer and a patterned second quantum dot light emitting layer.
  • the baking temperature in the photolithography process needs to be controlled below 150° C. to prevent high temperature quenching of the quantum dots.
  • the method for manufacturing the color filter further includes: providing a base substrate.
  • the steps of the method for manufacturing the color filter may include: firstly forming the first reflective layer on the base substrate, then forming the second quantum dot light emitting layer on the side, away from the base substrate, of the first reflective layer and exposing and developing the second quantum dot light emitting layer to obtain a patterned second quantum dot light emitting layer, then forming the first quantum dot light emitting layer on the side, away from the base substrate, of the second quantum dot light emitting layer and exposing and developing the first quantum dot light emitting layer to obtain a patterned first quantum dot light emitting layer, and finally manufacturing the second reflective layer and the cover layer (leveling layer).
  • the steps of the method for manufacturing the color filter includes, but is not limited to this, and the present disclosure is not limited in this aspect.
  • the method for manufacturing the color filter further includes: performing surface processing on the surface of the side, away from the first quantum dot light emitting layer, of the base substrate to form a micro-lens structure, thereby controlling the light emitting range of the light of the second wavelength.

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