TWM552187U - Lead frame structure with lines - Google Patents
Lead frame structure with lines Download PDFInfo
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- TWM552187U TWM552187U TW106207111U TW106207111U TWM552187U TW M552187 U TWM552187 U TW M552187U TW 106207111 U TW106207111 U TW 106207111U TW 106207111 U TW106207111 U TW 106207111U TW M552187 U TWM552187 U TW M552187U
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Description
本創作係有關一種導線架,尤指一種四方平面無引腳封裝(Quad Flat No leads,QFN),係用以固接晶片且具有雙面線路導通的導線架(Chip-on-Lead)製作方法。 The present invention relates to a lead frame, in particular to a quad flat no-lead (QFN), which is a chip-on-lead manufacturing method for fixing a wafer and having double-sided line conduction. .
已知,目前的IC半導體晶片或發光二極體的發光晶片在封裝時,都是先將晶片固晶導線架後,再進行打金線使晶片與內腳線路電性連結,在打完金線後於利用樹脂於該晶片及該導線架上形成一封裝體,再進行裁切成為一顆顆的半導體元件。 It is known that the current IC semiconductor wafer or the light-emitting diode of the LED is packaged after the wafer is fixed to the lead frame, and then the gold wire is electrically connected to electrically connect the wafer to the inner leg line. After the wire is formed on the wafer and the lead frame by using a resin, a package is formed and then cut into individual semiconductor elements.
而上述的半導體元件的製作成本及良率,與該導線架的製作有很大的關連,以往傳統的導線架200(如圖1)在製作時,將一金屬板100透過沖壓或蝕刻技術而成,在製作完成的導線架200具有一邊框201,該邊框201上連結有複數個聯結桿(Tie bar)202,該些聯結桿202連接一個金屬晶片座203,且在該些聯結桿202之間及該金屬晶片座203的四邊上具以邊框201相連結的引腳204,再將沖壓或蝕刻完成的導線架200進行電鍍處理,在該導線線200電鍍後,再進行粗化處理,使後製的晶片及塑膠與該導線架200的結合性高,以提供後續的固晶、打線、封膠的方便性。 The fabrication cost and yield of the above-mentioned semiconductor components are greatly related to the fabrication of the lead frame. In the prior art, the conventional lead frame 200 (see FIG. 1) is fabricated by punching or etching a metal plate 100. The lead frame 200 has a frame 201. The frame 201 is connected with a plurality of tie bars 202 connected to a metal wafer holder 203, and the link bars 202 are connected thereto. And a lead 204 connected to the frame 201 on the four sides of the metal wafer holder 203, and then the stamped or etched lead frame 200 is plated, and after the wire 200 is plated, the roughening process is performed. The post-production wafer and plastic have high bonding with the lead frame 200 to provide subsequent convenience of solid crystal bonding, wire bonding and sealing.
由於上述的該導線架200是透過模具進行沖壓技術製作時,製作造流程長,難度高,良率不佳,引腳204之間的間距受到限制無法縮小。 Since the lead frame 200 described above is manufactured by stamping technology through a die, the manufacturing process is long, the difficulty is high, the yield is not good, and the spacing between the pins 204 is limited and cannot be reduced.
因此,本創作之主要目的,在於解決傳統缺失,本創作提供一新技術,不需要開製設計引腳的模具,使導線架設計彈性大,且引腳的線路可以隨時做設計變更,讓引腳之間的間距縮小,使製作成本大幅降低,製作良率提昇。 Therefore, the main purpose of this creation is to solve the traditional lack. This creation provides a new technology. It does not need to open the mold for designing the lead, so that the design of the lead frame is flexible, and the line of the lead can be changed at any time. The spacing between the feet is reduced, the production cost is greatly reduced, and the production yield is improved.
為達上述之目的,本創作提供一種具線路之導線架結構,包括有:一導線架、一平台及一線路。該導線架具有一邊框、複數聯結桿、一金屬晶片座及一貫穿區域,該些聯結桿與該邊框及該金屬晶片座連結。該平台設於該貫穿區域上,該平台上具有一正面及一背面,該平台的該正面上具有複數個溝槽,該些溝槽上各具有一貫穿孔,該些貫穿孔貫穿該平台的該正面及該背面。該線路設於該些溝槽及該些貫穿孔中,以貫穿該平台的該正面及該背面。 For the above purposes, the present invention provides a lead frame structure having a line, comprising: a lead frame, a platform and a line. The lead frame has a frame, a plurality of connecting rods, a metal wafer holder and a through region, and the connecting rods are coupled to the frame and the metal wafer holder. The platform is disposed on the through area, the platform has a front surface and a back surface, the front surface of the platform has a plurality of grooves, each of the grooves has a consistent perforation, and the through holes penetrate the platform Front and back. The circuit is disposed in the trenches and the through holes to penetrate the front surface and the back surface of the platform.
在本創作之一實施例中,該貫穿區域包含有一第一貫穿區域、一第二貫穿區域及一第三貫穿區域,該第一貫穿區域位於該金屬晶片座的四邊,該第二貫穿區域位於該金屬晶片座上,該第三貫穿區域位於該邊框上。 In an embodiment of the present invention, the through region includes a first through region, a second through region, and a third through region, the first through region is located on four sides of the metal wafer holder, and the second through region is located The third through region is located on the metal wafer holder.
在本創作之一實施例中,該些溝槽位於該第一貫穿區域的平台的正面上,該些溝槽的底面及壁面為粗糙表面。 In an embodiment of the present invention, the grooves are located on a front surface of the platform of the first through region, and the bottom surface and the wall surface of the grooves are rough surfaces.
在本創作之一實施例中,該平台為塑膠。 In one embodiment of the present creation, the platform is plastic.
在本創作之一實施例中,該塑膠為環氧樹脂封裝材料。 In one embodiment of the present invention, the plastic is an epoxy encapsulating material.
在本創作之一實施例中,該線路具有複數條的導電線及複數個導電部,該些導電線設於該些溝槽中,該些導電部設於該些貫穿孔中。 In one embodiment of the present invention, the circuit has a plurality of conductive lines and a plurality of conductive portions, and the conductive lines are disposed in the plurality of trenches, and the conductive portions are disposed in the through holes.
在本創作之一實施例中,更包含複數導電端子,該些導電端子係電性固接於在貫穿至該平台背面的該些導電部上。 In an embodiment of the present invention, a plurality of conductive terminals are further included, and the conductive terminals are electrically fixed to the conductive portions penetrating to the back surface of the platform.
習知 Conventional knowledge
100‧‧‧金屬板 100‧‧‧Metal plates
200‧‧‧導線架 200‧‧‧ lead frame
201‧‧‧邊框 201‧‧‧Border
202‧‧‧聯結桿 202‧‧‧Links
203‧‧‧金屬晶片座 203‧‧‧metal wafer holder
204‧‧‧引腳 204‧‧‧ pin
本創作 This creation
S100-S110‧‧‧步驟 S100-S110‧‧‧Steps
10‧‧‧金屬板 10‧‧‧Metal plates
1‧‧‧導線架 1‧‧‧ lead frame
11‧‧‧邊框 11‧‧‧Border
12‧‧‧聯結桿 12‧‧‧Links
13‧‧‧金屬晶片座 13‧‧‧Metal wafer holder
14‧‧‧貫穿區域 14‧‧‧through areas
141‧‧‧第一貫穿區域 141‧‧‧First penetration area
142‧‧‧第二貫穿區域 142‧‧‧Second penetration area
143‧‧‧第三貫穿區域 143‧‧‧ third penetration area
2‧‧‧平台 2‧‧‧ platform
21‧‧‧溝槽 21‧‧‧ trench
211‧‧‧粗糙表面 211‧‧‧Rough surface
22‧‧‧貫穿孔 22‧‧‧through holes
3‧‧‧線路 3‧‧‧ lines
31‧‧‧導電線 31‧‧‧Flexible wire
32‧‧‧導電部 32‧‧‧Electrical Department
4‧‧‧導電端子 4‧‧‧Electrical terminals
圖1,係傳統的導線架外觀示意圖;圖2,係本創作之具線路之導線架製作流程示意圖;圖3,係本創作之具線路之導線架的金屬框架外觀示意圖;圖4,係圖3的背面示意圖;圖5,係圖3的導線架上形成平台的正面示意圖;圖6,係圖5的背面示意圖;圖7,係圖5在平台正面上製作溝槽及貫穿孔示意圖;圖8,係圖7的溝槽局部放大示意圖;圖9,係圖3的背面示意圖;圖10A,係圖7在平台上的溝槽及貫穿孔製作線路及導電部示意圖;圖10B,係圖10A的局部放大示意圖;圖11,係圖10A的背面示意圖;圖12,係圖10A的側視示意圖。 FIG. 1 is a schematic view showing the appearance of a conventional lead frame; FIG. 2 is a schematic view showing the manufacturing process of the lead frame of the present invention; FIG. 3 is a schematic view showing the appearance of a metal frame of the lead frame of the present invention; FIG. 3 is a schematic view of the back side; FIG. 5 is a front view of the platform formed on the lead frame of FIG. 3; FIG. 6 is a schematic view of the back side of FIG. 5; FIG. 7 is a schematic view of the groove and the through hole formed on the front surface of the platform; 8, a partial enlarged view of the groove of FIG. 7; FIG. 9 is a schematic view of the back of FIG. 3; FIG. 10A is a schematic view of the groove and through-hole fabrication line and conductive portion of the platform; FIG. 10B, FIG. 10A FIG. 11 is a schematic side view of FIG. 10A; FIG. 12 is a side view of FIG. 10A.
茲有關本創作之技術內容及詳細說明,現在配合圖式說明如下:請參閱圖2,係本創作之具線路之導線架製作方法流程示意圖,同時一併參閱圖3-12。如圖所示:本創作之具線路之導線架製作方法,係將一金屬板10先沖壓成型一導線架1,再於該導線架1上內利用膠體射出一平台2,於該平台2上製作有一導線架1的線路3,使該導線架1設計彈 性大,讓該線路3可以隨時做設計變更及線路3之間的線間距可以縮的更小,而且也取消引腳的製作,使製作更加簡單,也使製作成本大幅降低,製作良率提昇。 The technical content and detailed description of this creation are described below with reference to the following drawings: Please refer to Figure 2, which is a schematic flow chart of the method for manufacturing the lead frame of the present invention, and also refers to Figure 3-12. As shown in the figure, the method for manufacturing the lead frame of the present invention is to first stamp a metal plate 10 into a lead frame 1, and then use the colloid to project a platform 2 on the lead frame 1 on the platform 2. Making a line 3 with a lead frame 1 so that the lead frame 1 is designed to project It is very large, so that the line 3 can be changed at any time and the line spacing between the lines 3 can be reduced smaller, and the production of the pins is also eliminated, which makes the production more simple, and the production cost is greatly reduced, and the production yield is improved. .
首先,如步驟S100,備有一金屬板10。在本圖式中,該金屬板10為銅金屬材質。 First, as in step S100, a metal plate 10 is provided. In the present drawing, the metal plate 10 is made of a copper metal material.
步驟S102,導線架製作,透過沖壓技術將該金屬板10進行沖壓,在該金屬板10沖壓後形成有至少一個導線架1,於每一個該導線架1具有一邊框11、複數聯結桿(Tie bar)12、一金屬晶片座13及貫穿區域14,該些聯結桿12與該邊框11及該金屬晶片座13連結,該貫穿區域14包含有一第一貫穿區域141、一第二貫穿區域142及一第三貫穿區域143。該第一貫穿區域141位於該金屬晶片座13的四邊,該第二貫穿區域142位於該金屬晶片座13上,該第三貫穿區域143位於該邊框11上。 Step S102, the lead frame is fabricated, and the metal plate 10 is punched by a stamping technique. After the metal plate 10 is stamped, at least one lead frame 1 is formed. Each of the lead frames 1 has a frame 11 and a plurality of connecting rods (Tie a metal wafer holder 13 and a through region 14 , the connecting rod 12 is coupled to the frame 11 and the metal wafer holder 13 , the through region 14 includes a first through region 141 , a second through region 142 , and A third through region 143. The first through region 141 is located on four sides of the metal wafer holder 13 , and the second through region 142 is located on the metal wafer holder 13 , and the third through region 143 is located on the frame 11 .
步驟S104,平台製作,將上述沖壓完成的導線架1上利用射出或熱壓技術將塑膠成型於該貫穿區域14的第一貫穿區域141、該第二貫穿區域142及該第三貫穿區域143中形成有一平台2。在本圖式中,該塑膠為環氧樹脂封裝材料(Epoxy Molding Compound,EMC)。 Step S104, the platform is formed, and the plastic is molded into the first through region 141, the second through region 142 and the third through region 143 of the through region 14 by using an injection or hot pressing technique. Formed with a platform 2. In this figure, the plastic is an epoxy resin encapsulating material (EMC).
步驟S106,溝槽及貫穿孔製作,利用雷射光雕機(圖中未示)於該平台2的一側面上進行光蝕刻,在光蝕刻後於該平台2的一側面上形成有複數溝槽21及該些溝槽21上各具有一貫穿孔22。該些貫穿孔22以貫穿該平台2的正面及背面,該些溝槽21在光蝕刻時,使該些溝槽21的底面及壁面形成粗糙表面211,該粗糙表面211在與金屬形成線路3時,該粗糙表面211可以與該線路3穩固結合在一起。 Step S106, the groove and the through hole are formed, and a photolithography is performed on one side of the platform 2 by a laser engraving machine (not shown), and a plurality of grooves are formed on one side of the platform 2 after photolithography. The groove 21 and the grooves 21 each have a uniform perforation 22 . The through holes 22 extend through the front and back surfaces of the platform 2, and the grooves 21 form a rough surface 211 on the bottom surface and the wall surface of the trenches 21 during photolithography, and the rough surface 211 forms a line 3 with the metal. The rough surface 211 can be firmly bonded to the line 3.
步驟S108,線路製作,在上述該平台2的該些溝槽21及該些貫穿孔22製作完成後,於該些溝槽21及該些貫穿孔22中進行薄膜沉積技術,在薄膜沉積過程中使金屬材料沉積在該些溝槽21及該些貫穿孔22裡形成一線路3,該線路3包含有複數條導電線31及複數個與該些導電線31電性連結的導電部32,該些導電部32由該平台2正面貫穿至該平台2的背面。 In step S108, after the trenches 21 and the through holes 22 of the platform 2 are completed, a thin film deposition technique is performed on the trenches 21 and the through holes 22 during the film deposition process. Depositing a metal material in the trenches 21 and the through holes 22 to form a line 3, the circuit 3 includes a plurality of conductive lines 31 and a plurality of conductive portions 32 electrically connected to the conductive lines 31. The conductive portions 32 are penetrated from the front surface of the platform 2 to the back surface of the platform 2.
步驟S110,導電端子製作,在上述的該線路3製作完成後,透過加工技術將錫材料製作在該些貫穿至該平台2背面的導電部32的表面上,以形成有一導電端子4。在本圖式中,該導電端子4為錫球、錫墊。 In step S110, the conductive terminals are formed. After the circuit 3 is fabricated, the tin material is formed on the surface of the conductive portion 32 penetrating the back surface of the platform 2 by a processing technique to form a conductive terminal 4. In the figure, the conductive terminal 4 is a solder ball or a tin pad.
在上述個步驟製作完成後,即可進行半導體封裝技術中的在該金屬晶片座13固晶後,再將晶片進行打線與該線路3電性連結等加工製作。 After the above-described steps are completed, the semiconductor package technology can be processed after the metal wafer holder 13 is crystallized, and then the wafer is wired and electrically connected to the line 3.
請參閱圖3-12,係本創作之具線路之導線架結構的各部製作結構示意圖。如圖所示:本創作之具線路之導線架結構包括有:一導線架1、一平台2、一線路3及數個導電端子4。 Please refer to FIG. 3-12, which is a schematic diagram of the fabrication structure of each part of the lead frame structure of the present invention. As shown in the figure, the lead frame structure of the present invention includes: a lead frame 1, a platform 2, a line 3 and a plurality of conductive terminals 4.
該導線架1,具有一邊框11、複數聯結桿(Tie bar)12、一金屬晶片座13及貫穿區域14,該些聯結桿12與該邊框11及該金屬晶片座13連結,該貫穿區域14包含有一第一貫穿區域141、一第二貫穿區域142及一第三貫穿區域143。該第一貫穿區域141位於該金屬晶片座13的四邊,該第二貫穿區域142位於該金屬晶片座13上,該第三貫穿區域143位於該邊框11上。 The lead frame 1 has a frame 11 , a plurality of tie bars 12 , a metal wafer holder 13 , and a through region 14 . The tie bars 12 are coupled to the frame 11 and the metal wafer holder 13 . The first through region 141, the second through region 142 and a third through region 143 are included. The first through region 141 is located on four sides of the metal wafer holder 13 , and the second through region 142 is located on the metal wafer holder 13 , and the third through region 143 is located on the frame 11 .
該平台2,係設於該導線架1的該貫穿區域14上,該平台2上具有複數個溝槽21,該些溝槽21位於該第一貫穿區域141的平台2的正面上,該些 溝槽21的底面及壁面形成有一粗糙表面211,該粗糙表面211在與金屬形成線路3時,該粗糙表面211可以與該線路3穩固結合在一起。該些溝槽21上各具有一貫穿孔22,該些貫穿孔22貫穿該平台2的正面及背面。在本圖式中,該平台2該塑膠,該塑膠為環氧樹脂封裝材料(Epoxy Molding Compound,EMC)。 The platform 2 is disposed on the through-area 14 of the lead frame 1. The platform 2 has a plurality of grooves 21 on the front surface of the platform 2 of the first through-region 141. The bottom surface and the wall surface of the groove 21 are formed with a rough surface 211 which can be firmly bonded to the line 3 when the line 3 is formed with the metal. The grooves 21 each have a uniform through hole 22 penetrating the front and back sides of the platform 2 . In the figure, the platform 2 is a plastic, and the plastic is an epoxy resin encapsulating material (EMC).
該線路3,係具有複數條的導電線31及複數個導電部32。該些導電線31設於該些溝槽21中,該些導電部32設於該些貫穿孔22中。 The line 3 has a plurality of conductive lines 31 and a plurality of conductive portions 32. The conductive lines 31 are disposed in the plurality of trenches 21 , and the conductive portions 32 are disposed in the through holes 22 .
該些導電端子4,係電性固接於在貫穿至該平台2背面的該些導電部32的表面上。該些導電端子4以提供與電路板(圖中未示)電性固接。在本圖式中,該些導電端子4為錫球或錫墊。 The conductive terminals 4 are electrically fixed to the surfaces of the conductive portions 32 that penetrate the back surface of the platform 2. The conductive terminals 4 are provided to be electrically fixed to a circuit board (not shown). In the figure, the conductive terminals 4 are solder balls or tin pads.
藉由,上述的平台2上製作線路3,使該導線架1設計彈性大,讓該線路3可以隨時做設計變更及線路3之間的線間距可以縮的更小,而且也取消引腳的製作,使製作更加簡單,也使製作成本大幅降低,製作良率提昇。 By making the line 3 on the above-mentioned platform 2, the design of the lead frame 1 is flexible, so that the line 3 can be changed at any time and the line spacing between the lines 3 can be reduced smaller, and the pin is also eliminated. Production makes the production easier, and the production cost is greatly reduced, and the production yield is improved.
惟以上所述僅為本創作之較佳實施例,非意欲侷限本創作的專利保護範圍,故舉凡運用本創作說明書或圖式內容所為的等效變化,均同理皆包含於本創作的權利保護範圍內,合予陳明。 However, the above description is only a preferred embodiment of the present invention, and it is not intended to limit the scope of patent protection of the present creation. Therefore, the equivalent changes made by using the present specification or the content of the schema are all included in the right of the creation. Within the scope of protection, it is given to Chen Ming.
10‧‧‧金屬板 10‧‧‧Metal plates
1‧‧‧導線架 1‧‧‧ lead frame
11‧‧‧邊框 11‧‧‧Border
12‧‧‧聯結桿 12‧‧‧Links
13‧‧‧金屬晶片座 13‧‧‧Metal wafer holder
14‧‧‧貫穿區域 14‧‧‧through areas
141‧‧‧第一貫穿區域 141‧‧‧First penetration area
142‧‧‧第二貫穿區域 142‧‧‧Second penetration area
143‧‧‧第三貫穿區域 143‧‧‧ third penetration area
2‧‧‧平台 2‧‧‧ platform
21‧‧‧溝槽 21‧‧‧ trench
3‧‧‧線路 3‧‧‧ lines
32‧‧‧導電部 32‧‧‧Electrical Department
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106207111U TWM552187U (en) | 2017-05-18 | 2017-05-18 | Lead frame structure with lines |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106207111U TWM552187U (en) | 2017-05-18 | 2017-05-18 | Lead frame structure with lines |
Publications (1)
Publication Number | Publication Date |
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TWM552187U true TWM552187U (en) | 2017-11-21 |
Family
ID=61014872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW106207111U TWM552187U (en) | 2017-05-18 | 2017-05-18 | Lead frame structure with lines |
Country Status (1)
Country | Link |
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TW (1) | TWM552187U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110391204A (en) * | 2018-04-16 | 2019-10-29 | 复盛精密工业股份有限公司 | Lead frame structure with chip holder |
-
2017
- 2017-05-18 TW TW106207111U patent/TWM552187U/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110391204A (en) * | 2018-04-16 | 2019-10-29 | 复盛精密工业股份有限公司 | Lead frame structure with chip holder |
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