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TWI828749B - edge trimming device - Google Patents

edge trimming device Download PDF

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Publication number
TWI828749B
TWI828749B TW108132675A TW108132675A TWI828749B TW I828749 B TWI828749 B TW I828749B TW 108132675 A TW108132675 A TW 108132675A TW 108132675 A TW108132675 A TW 108132675A TW I828749 B TWI828749 B TW I828749B
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Taiwan
Prior art keywords
bonded wafer
height
cutting
wafer
axis direction
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TW108132675A
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Chinese (zh)
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TW202010599A (en
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牧野香一
野口慎一郎
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/068—Table-like supports for panels, sheets or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/20—Drives or gearings; Equipment therefor relating to feed movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/22—Equipment for exact control of the position of the grinding tool or work at the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

[課題]使切削刀對貼合晶圓的表面的切入深度成為一定。 [解決手段]控制手段生成將吸盤平台(31)的旋轉軸的旋轉角度、與在各旋轉角度被測定到的貼合晶圓(1)中的外周上面的高度建立對應的對應資料，因此可良好地掌握貼合晶圓(1)中的外周上面的高度的不均。此外，根據對應資料，掌握旋轉軸的旋轉角度所對應的貼合晶圓(1)的外周上面的高度，且按照該高度來設定切削刀(63)的高度。藉此，可將切削刀(63)對貼合晶圓(1)的外周上面的切入深度，輕易地形成為大致一定。接著，藉由將切削刀(63)切入深度成為大致一定，可減小切削刀(63)的消耗。[Problem] Make the cutting depth of the cutting blade into the surface of the bonded wafer constant. [Solution] The control means generates correspondence data that associates the rotation angle of the rotation axis of the suction cup stage (31) with the height above the outer circumference of the bonded wafer (1) measured at each rotation angle, so that it can The height unevenness on the outer circumference of the bonded wafer (1) is well understood. In addition, based on the corresponding data, the height above the outer circumference of the bonded wafer (1) corresponding to the rotation angle of the rotation axis is determined, and the height of the cutting blade (63) is set according to this height. Thereby, the cutting depth of the cutting blade (63) on the upper surface of the outer circumference of the bonded wafer (1) can be easily formed to be approximately constant. Then, by making the cutting depth of the cutting blade (63) approximately constant, the consumption of the cutting blade (63) can be reduced.

Description

邊緣修整裝置edge trimming device

本發明係關於邊緣修整裝置。The present invention relates to edge trimming devices.

晶圓係在表面形成元件之後，背面被研削而薄化。在此，有在晶圓的外周形成有由表面至背面的倒角部的情形。此時，因將晶圓薄化，其外周緣的倒角部成為尖銳邊緣。此係造成使晶圓發生裂痕的要因。為防止該情形，有一種方法係在研削前，實施在晶圓的表面側，以預定深度將倒角部以環狀去除的邊緣修整，之後將晶圓的背面以研削砥石研削而薄化(參照專利文獻1及2)。在該方法中，由於未形成有尖銳邊緣，因此抑制裂痕發生。 在該方法中，係在對晶圓的表面實施邊緣修整之後，使晶圓反轉，來研削背面。藉此，由於倒角部被完全去除，因此不需要將邊緣修整的深度形成為均一。 [先前技術文獻] [專利文獻]After components are formed on the surface of the wafer, the back side is ground and thinned. Here, the chamfer portion from the front surface to the back surface may be formed on the outer periphery of the wafer. At this time, since the wafer is thinned, the chamfered portion of the outer peripheral edge becomes a sharp edge. This is the main cause of cracks in the wafer. To prevent this, one method is to trim the edge of the chamfer portion in a ring shape to a predetermined depth on the front side of the wafer before grinding, and then grind the back side of the wafer with a grinding stone to thin it ( Refer to patent documents 1 and 2). In this method, since sharp edges are not formed, the occurrence of cracks is suppressed. In this method, after edge trimming is performed on the surface of the wafer, the wafer is turned over and the back surface is ground. Thereby, since the chamfer portion is completely removed, it is not necessary to make the depth of edge trimming uniform. [Prior technical literature] [Patent Document]

[專利文獻1]日本專利第5991890號公報 [專利文獻2]日本專利第6196776號公報[Patent Document 1] Japanese Patent No. 5991890 [Patent Document 2] Japanese Patent No. 6196776

(發明所欲解決之課題)(The problem that the invention aims to solve)

另一方面，在包含2枚晶圓的貼合晶圓中，各晶圓的表面(設有元件的面)位於貼合面側。因此，為了在研削背面時抑制形成尖銳邊緣，倒角部被完全切除。在貼合晶圓中，例如，形成元件之具有均等面內厚度的其中一方晶圓、與在面內厚度具有不均的另一方晶圓相貼合。若另一方晶圓中的面內厚度不均大，當將其中一方晶圓的表面進行邊緣修整時，難以將切削刀的切入深度形成為一定。 (解決課題之手段)On the other hand, in a bonded wafer including two wafers, the surface of each wafer (the surface on which components are provided) is located on the bonding surface side. Therefore, in order to suppress the formation of sharp edges when grinding the back surface, the chamfered portion is completely cut off. In bonding wafers, for example, one wafer having a uniform in-plane thickness forming a component is bonded to the other wafer having an uneven in-plane thickness. If the in-plane thickness unevenness in the other wafer is large, it will be difficult to make the cutting depth of the cutting blade constant when edge trimming is performed on the surface of one of the wafers. (Means to solve problems)

本發明之邊緣修整裝置係以切削刀切削將在外周緣具有倒角部的晶圓與支持基板以貼合構件相貼合的貼合晶圓的該倒角部的邊緣修整裝置，其係具備：保持手段，其係具有接觸該支持基板且保持該貼合晶圓的保持面；切削手段，其係使在前端裝設有該切削刀的心軸旋轉，且切削被保持在該保持面的該貼合晶圓的該倒角部；Z軸方向移動手段，其係以相對該保持面呈垂直的Z軸方向，使該切削手段移動；上面高度測定手段，其係由被保持在該保持面的該貼合晶圓的上面側，測定該貼合晶圓的外周上面的高度；記憶手段；及控制手段，該保持手段係具備：吸盤平台，其係具有該保持面；旋轉軸，其係以該保持面的中心為軸心且連結於該吸盤平台；馬達，其係使該旋轉軸旋轉；及編碼器，其係檢測該旋轉軸的旋轉角度，該記憶手段係記憶將該旋轉軸旋轉時，藉由該編碼器被檢測到的旋轉角度；及在該旋轉角度中藉由該上面高度測定手段被測定到的外周上面高度建立對應的對應資料，該控制手段係使該旋轉軸旋轉，由該對應資料叫出藉由該編碼器被檢測到的旋轉角度所對應的該外周上面高度，且按照所叫出的該外周上面高度，設定該切削刀的高度。 (發明之效果)The edge trimming device of the present invention is an edge trimming device that uses a cutting blade to cut the chamfered portion of the bonded wafer by bonding the wafer with the chamfered portion on the outer peripheral edge to the support substrate using a bonding member. It is provided with: The holding means has a holding surface that contacts the supporting substrate and holds the bonded wafer; the cutting means rotates a mandrel equipped with the cutting blade at the front end, and cuts the holding surface held on the holding surface. The chamfered portion of the wafer is attached to the wafer; the Z-axis direction moving means moves the cutting means in the Z-axis direction perpendicular to the holding surface; and the upper height measuring means is held on the holding surface. The upper side of the bonded wafer is used to measure the height of the upper surface of the outer circumference of the bonded wafer; a memory means; and a control means, and the holding means is provided with: a suction cup platform having the holding surface; and a rotation axis having the holding surface. With the center of the holding surface as the axis and connected to the suction cup platform; a motor to rotate the rotating shaft; and an encoder to detect the rotation angle of the rotating shaft, and the memory means to remember to rotate the rotating shaft At this time, the rotation angle detected by the encoder; and the corresponding data of the outer circumferential upper surface height measured by the upper surface height measuring means in the rotation angle are established, and the control means causes the rotation shaft to rotate, The outer peripheral upper surface height corresponding to the rotation angle detected by the encoder is called from the corresponding data, and the height of the cutting tool is set according to the outer peripheral upper surface height called. (The effect of the invention)

在本發明之邊緣修整裝置中，由於記憶有將旋轉軸的旋轉角度、與在各旋轉角度被測定到的貼合晶圓的外周上面的高度建立對應的對應資料，因此可根據該對應資料，良好地掌握貼合晶圓中的外周上面的高度的不均。In the edge trimming device of the present invention, correspondence data is stored that associates the rotation angle of the rotation axis with the height above the outer circumference of the bonded wafer measured at each rotation angle. Therefore, based on the correspondence data, The height unevenness on the outer periphery of the bonded wafer is well understood.

此外，由於可按照貼合晶圓的外周上面的高度來設定切削刀的高度，因此可將切削刀對外周上面的切入深度，輕易地形成為大致一定。藉此，可減小切削刀的消耗。In addition, since the height of the cutting blade can be set according to the height of the upper surface of the outer circumference of the bonded wafer, the cutting depth of the cutting blade on the upper surface of the outer circumference can be easily made almost constant. Thereby, the consumption of the cutting tool can be reduced.

首先，簡單說明本實施形態之邊緣修整裝置(以下設為本邊緣修整裝置)的被加工物亦即貼合晶圓1。如圖1所示，貼合晶圓1係形成為例如圓板狀。First, the bonded wafer 1 which is a workpiece of the edge trimming device of this embodiment (hereinafter referred to as this edge trimming device) will be briefly explained. As shown in FIG. 1 , the bonded wafer 1 is formed in a disc shape, for example.

如圖1及圖2所示，貼合晶圓1係包含：晶圓2、及用以支持晶圓2的支持基板3。As shown in FIGS. 1 and 2 , the bonded wafer 1 includes a wafer 2 and a support substrate 3 for supporting the wafer 2 .

晶圓2係形成為圓板狀，在外周緣7，由表面2a至背面2b，以圓弧狀形成有倒角部4。晶圓2係在其表面2a具有元件D。The wafer 2 is formed into a disc shape, and an arc-shaped chamfer 4 is formed on the outer peripheral edge 7 from the front surface 2a to the back surface 2b. Wafer 2 has element D on its surface 2a.

支持基板3係例如以矽為母材，具有相對較高的剛性。支持基板3係形成為與晶圓2為大致同形的圓板狀。此外，在貼合晶圓1中，支持基板3的中心與晶圓2的中心大致相一致。 其中，支持基板3的母材亦可為藍寶石或玻璃等。The support substrate 3 is made of, for example, silicon as a base material and has relatively high rigidity. The support substrate 3 is formed in a disc shape substantially the same shape as the wafer 2 . In addition, in the bonded wafer 1 , the center of the support substrate 3 substantially coincides with the center of the wafer 2 . Among them, the base material of the supporting substrate 3 can also be sapphire or glass.

晶圓2與支持基板3係將晶圓2的表面2a與支持基板3的表面3a形成為相貼面，透過接著構件J而彼此相貼合。藉此，晶圓2的背面2b及支持基板3的背面3b成為貼合晶圓1的露出面。接著構件J係由例如紫外線硬化樹脂製的接著劑所成，具有20～50μm的厚度。接著構件J係相當於貼合構件之一例。 本邊緣修整裝置係將如上所示之貼合晶圓1中的晶圓2的倒角部4去除。以下說明本邊緣修整裝置的構成。The surface 2 a of the wafer 2 and the surface 3 a of the supporting substrate 3 are bonded to each other through the adhesive member J. Thereby, the back surface 2b of the wafer 2 and the back surface 3b of the support substrate 3 become the exposed surface of the bonded wafer 1. The subsequent member J is made of, for example, an adhesive made of ultraviolet curable resin, and has a thickness of 20 to 50 μm. Next, member J is equivalent to an example of a bonding member. This edge trimming device removes the chamfered portion 4 of the wafer 2 in the bonded wafer 1 as shown above. The structure of this edge trimming device will be described below.

在圖3所示之本邊緣修整裝置中，對被保持在保持手段30中的吸盤平台31的貼合晶圓1，使用切削手段6所配備的切削刀63來施行切削加工的裝置。藉由該切削加工，晶圓2的倒角部4被切削。 此外，在本邊緣修整裝置中，為了進行藉由切削手段6所為之切削加工，藉由上面高度測定手段20，測定貼合晶圓1的外周上面高度。In this edge trimming device shown in FIG. 3 , the bonded wafer 1 held by the suction cup stage 31 in the holding device 30 is cut using the cutting blade 63 provided with the cutting device 6 . By this cutting process, the chamfer portion 4 of the wafer 2 is cut. In addition, in this edge trimming device, in order to perform cutting processing by the cutting means 6, the upper surface height measuring means 20 measures the outer circumferential upper surface height of the bonded wafer 1.

如圖3所示，本邊緣修整裝置係具備：基台10、立設在基台10的門型支柱14、及控制本邊緣修整裝置的各構件的控制手段70。As shown in FIG. 3 , the edge trimming device includes a base 10 , a door-shaped support 14 erected on the base 10 , and a control means 70 for controlling each component of the edge trimming device.

在基台10上係配設有切削進給機構11。切削進給機構11係使包含吸盤平台31的保持手段30，沿著切削進給方向(X軸方向)移動。切削進給機構11係包含：以X軸方向延伸的一對導軌111、被載置於導軌111的X軸平台113、與導軌111呈平行延伸的滾珠螺桿110、及使滾珠螺桿110旋轉的馬達112。A cutting feed mechanism 11 is provided on the base 10 . The cutting feed mechanism 11 moves the holding means 30 including the suction cup platform 31 along the cutting feed direction (X-axis direction). The cutting feed mechanism 11 includes: a pair of guide rails 111 extending in the X-axis direction, an X-axis platform 113 placed on the guide rails 111, a ball screw 110 extending in parallel with the guide rails 111, and a motor that rotates the ball screw 110. 112.

一對導軌111係與X軸方向呈平行地被配置在基台10的上面。X軸平台113係可沿著該等導軌111滑動地被設置在一對導軌111上。在X軸平台113上係載置有保持手段30。A pair of guide rails 111 are arranged on the upper surface of the base 10 parallel to the X-axis direction. The X-axis platform 113 is disposed on a pair of guide rails 111 so as to be slidable along the guide rails 111 . The holding means 30 is mounted on the X-axis platform 113.

滾珠螺桿110係螺合於被設在X軸平台113的下面側的螺帽部(未圖示)。馬達112係連結於滾珠螺桿110的一端部，旋轉驅動滾珠螺桿110。藉由滾珠螺桿110被旋轉驅動，X軸平台113及保持手段30沿著導軌111，沿著切削進給方向亦即X軸方向移動。The ball screw 110 is screwed into a nut portion (not shown) provided on the lower surface side of the X-axis stage 113 . The motor 112 is connected to one end of the ball screw 110 and drives the ball screw 110 to rotate. As the ball screw 110 is rotationally driven, the X-axis stage 113 and the holding means 30 move along the guide rail 111 along the cutting feed direction, that is, in the X-axis direction.

如圖1及圖4所示，保持手段30係具有：大致圓板狀的吸盤平台31、及大致圓柱形狀的平台基座32。吸盤平台31係吸附保持圖1所示之貼合晶圓1。平台基座32係在支持吸盤平台31的狀態下，被固定在X軸平台113上。As shown in FIGS. 1 and 4 , the holding means 30 has a substantially disk-shaped suction cup platform 31 and a substantially cylindrical platform base 32 . The suction cup platform 31 adsorbs and holds the bonded wafer 1 shown in FIG. 1 . The platform base 32 is fixed to the X-axis platform 113 while supporting the suction cup platform 31 .

如圖4所示，吸盤平台31係具備：包含多孔材的吸附部312、及支持吸附部312的框體314。As shown in FIG. 4 , the suction cup platform 31 includes an adsorption part 312 made of a porous material, and a frame 314 that supports the adsorption part 312 .

吸附部312係與未圖示之吸引源相連通，具有作為露出面的保持面313。保持面313係比貼合晶圓1為稍小的圓形，形成為與框體314的上面為相同一面。吸附部312係藉由該保持面313，吸引保持貼合晶圓1。The adsorption part 312 is connected to a suction source (not shown) and has a holding surface 313 as an exposed surface. The holding surface 313 has a slightly smaller circular shape than the bonded wafer 1 and is formed to be the same surface as the upper surface of the frame 314 . The adsorption part 312 attracts and holds the bonded wafer 1 through the holding surface 313 .

吸盤平台31係被支持在配設於吸盤平台31的底面側的平台基座32。在平台基座32內係具備：吸盤平台31的旋轉軸315、使旋轉軸315旋轉的馬達317、及檢測旋轉軸315的旋轉角度的編碼器319。旋轉軸315的旋轉角度係例如以旋轉軸315的預定的角度位置為原點來作檢測。The suction cup platform 31 is supported by the platform base 32 provided on the bottom surface side of the suction cup platform 31 . The platform base 32 is provided with a rotation shaft 315 of the suction cup stage 31 , a motor 317 that rotates the rotation shaft 315 , and an encoder 319 that detects the rotation angle of the rotation shaft 315 . The rotation angle of the rotation axis 315 is detected, for example, with a predetermined angular position of the rotation axis 315 as the origin.

在基台10上的-X方向側，係以跨越切削進給機構11的方式立設有門型支柱14。 在門型支柱14的側面的+Y側係設有使切削手段6移動的切削手段移動機構13。切削手段移動機構13係將切削手段6以Y軸方向進行分度進給，並且以Z軸方向進行切入進給。切削手段移動機構13係具備：使切削手段6以Y軸方向移動的第1Y軸方向移動手段12、及使切削手段6以Z軸方向移動的第1Z軸方向移動手段16。On the −X direction side of the base 10 , a gate-shaped support 14 is erected across the cutting feed mechanism 11 . A cutting means moving mechanism 13 for moving the cutting means 6 is provided on the +Y side of the side surface of the portal support 14 . The cutting means moving mechanism 13 performs indexing feed of the cutting means 6 in the Y-axis direction and performs cutting feed in the Z-axis direction. The cutting means moving mechanism 13 includes a first Y-axis direction moving means 12 for moving the cutting means 6 in the Y-axis direction, and a first Z-axis direction moving means 16 for moving the cutting means 6 in the Z-axis direction.

第1Y軸方向移動手段12係配設在門型支柱14的側面。第1Y軸方向移動手段12係以Y軸方向使第1Z軸方向移動手段16及切削手段6往返移動。Y軸方向係相對X軸方向，與保持面方向(水平方向)呈正交的方向。 第1Y軸方向移動手段12係包含：以Y軸方向延伸的一對導軌121、被載置在導軌121的第1Y軸平台123、與導軌121呈平行延伸的第1滾珠螺桿120、及使第1滾珠螺桿120旋轉的馬達(未圖示)。The first Y-axis direction moving means 12 is arranged on the side of the portal support 14 . The first Y-axis direction moving means 12 reciprocates the first Z-axis direction moving means 16 and the cutting means 6 in the Y-axis direction. The Y-axis direction is relative to the X-axis direction and orthogonal to the holding surface direction (horizontal direction). The first Y-axis direction moving means 12 includes: a pair of guide rails 121 extending in the Y-axis direction, a first Y-axis platform 123 mounted on the guide rails 121, a first ball screw 120 extending in parallel with the guide rails 121, and a first ball screw 120 extending in parallel with the guide rails 121. 1. A motor (not shown) that rotates the ball screw 120.

一對導軌121係與Y軸方向呈平行地配置在門型支柱14的側面。第1Y軸平台123係可沿著該等導軌121滑動地被設置在一對導軌121上。在第1Y軸平台123上係載置有第1Z軸方向移動手段16及切削手段6。The pair of guide rails 121 are arranged on the side surfaces of the portal support 14 parallel to the Y-axis direction. The first Y-axis platform 123 is disposed on a pair of guide rails 121 so as to be slidable along the guide rails 121 . The first Z-axis direction moving means 16 and the cutting means 6 are mounted on the first Y-axis stage 123.

第1滾珠螺桿120係螺合在被設在第1Y軸平台123的背面側的螺帽部(未圖示)。第1Y軸方向移動手段12的馬達係連結於第1滾珠螺桿120的+Y側的端部，旋轉驅動第1滾珠螺桿120。藉由第1滾珠螺桿120被旋轉驅動，第1Y軸平台123、第1Z軸方向移動手段16、及切削手段6沿著導軌121，以作為分度進給方向的Y軸方向移動。The first ball screw 120 is screwed into a nut portion (not shown) provided on the back side of the first Y-axis stage 123 . The motor of the first Y-axis direction moving means 12 is connected to the +Y side end of the first ball screw 120 and drives the first ball screw 120 to rotate. As the first ball screw 120 is rotationally driven, the first Y-axis stage 123, the first Z-axis direction moving means 16, and the cutting means 6 move along the guide rail 121 in the Y-axis direction which is the indexing feed direction.

第1Z軸方向移動手段16係使切削手段6以Z軸方向(鉛直方向)往返移動。Z軸方向係與X軸方向及Y軸方向呈正交，並且相對吸盤平台31的保持面313呈正交的方向。The first Z-axis direction moving means 16 reciprocates the cutting means 6 in the Z-axis direction (vertical direction). The Z-axis direction is orthogonal to the X-axis direction and the Y-axis direction, and is orthogonal to the holding surface 313 of the suction cup platform 31 .

第1Z軸方向移動手段16係包含：以Z軸方向延伸的一對導軌161、被載置於導軌161的第1支持構件163、與導軌161呈平行延伸的滾珠螺桿160、及使滾珠螺桿160旋轉的馬達162。The first Z-axis direction moving means 16 includes: a pair of guide rails 161 extending in the Z-axis direction, a first supporting member 163 placed on the guide rails 161, a ball screw 160 extending in parallel with the guide rail 161, and the ball screw 160 Rotating motor 162.

一對導軌161係與Z軸方向呈平行地配置在第1Y軸平台123。第1支持構件163係可沿著該等導軌161滑動地被設置在一對導軌161上。在第1支持構件163的下端部係安裝有切削手段6。The pair of guide rails 161 are arranged on the first Y-axis platform 123 parallel to the Z-axis direction. The first support member 163 is provided on the pair of guide rails 161 so as to be slidable along the guide rails 161 . The cutting means 6 is attached to the lower end of the first support member 163 .

滾珠螺桿160係螺合在被設在第1支持構件163的背面側的螺帽部(未圖示)。馬達162係連結於滾珠螺桿160的一端部，旋轉驅動滾珠螺桿160。藉由滾珠螺桿160被旋轉驅動，第1支持構件163及切削手段6沿著導軌161，以作為切入進給方向的Z軸方向移動。The ball screw 160 is screwed into a nut portion (not shown) provided on the back side of the first support member 163 . The motor 162 is connected to one end of the ball screw 160 and drives the ball screw 160 to rotate. When the ball screw 160 is rotationally driven, the first support member 163 and the cutting means 6 move along the guide rail 161 in the Z-axis direction which is the cutting feed direction.

切削手段6係具備被設在第1支持構件163的下端的殼體61。切削手段6係如圖3中將局部放大顯示般，另外具備：以Y軸方向延伸的心軸60、被裝設在心軸60的前端的切削刀63、及旋轉驅動心軸60的馬達(未圖示)。 心軸60係可旋轉地藉由殼體61予以支持。藉由馬達旋轉驅動心軸60，切削刀63亦高速旋轉。The cutting means 6 includes a housing 61 provided at the lower end of the first support member 163 . The cutting means 6 is partially enlarged as shown in FIG. 3 and further includes a spindle 60 extending in the Y-axis direction, a cutting blade 63 installed at the front end of the spindle 60, and a motor (not shown) for rotationally driving the spindle 60. icon). The spindle 60 is rotatably supported by the housing 61 . As the motor rotates and drives the spindle 60, the cutting blade 63 also rotates at high speed.

在門型支柱14的側面的-Y側係設有使上面高度測定手段20移動的上面高度測定手段移動機構18。上面高度測定手段移動機構18係將上面高度測定手段20，以Y軸方向進行分度進給，並且以Z軸方向進行切入進給。上面高度測定手段移動機構18係具備：使上面高度測定手段20以Y軸方向移動的第2Y軸方向移動手段15、及使上面高度測定手段20以Z軸方向移動的第2Z軸方向移動手段17。An upper surface height measuring means moving mechanism 18 for moving the upper surface height measuring means 20 is provided on the -Y side of the side surface of the gate-shaped support 14. The upper surface height measuring means moving mechanism 18 performs indexing feed of the upper surface height measuring means 20 in the Y-axis direction and performs cutting feed in the Z-axis direction. The upper surface height measuring means moving mechanism 18 is provided with: a second Y-axis direction moving means 15 for moving the upper surface height measuring means 20 in the Y-axis direction, and a second Z-axis direction moving means 17 for moving the upper surface height measuring means 20 in the Z-axis direction. .

第2Y軸方向移動手段15係具有與第1Y軸方向移動手段12同樣的構成，被配設在門型支柱14的側面。第2Y軸方向移動手段15係以Y軸方向，使第2Z軸方向移動手段17及上面高度測定手段20往返移動。The second Y-axis direction moving means 15 has the same structure as the first Y-axis direction moving means 12 and is arranged on the side surface of the gate-shaped support 14 . The second Y-axis direction moving means 15 reciprocates the second Z-axis direction moving means 17 and the upper surface height measuring means 20 in the Y-axis direction.

第2Y軸方向移動手段15係包含：一對導軌121、被載置於導軌121的第2Y軸平台153、與導軌121呈平行延伸的第2滾珠螺桿150、及使第2滾珠螺桿150旋轉的馬達152。The second Y-axis direction moving means 15 includes a pair of guide rails 121, a second Y-axis stage 153 mounted on the guide rails 121, a second ball screw 150 extending parallel to the guide rails 121, and a device for rotating the second ball screw 150. Motor 152.

第2Y軸方向移動手段15係與第1Y軸方向移動手段12兼用一對導軌121。第2Y軸平台153係可沿著該等導軌121滑動地被設置在一對導軌121上。在第2Y軸平台153上係載置有第2Z軸方向移動手段17及上面高度測定手段20。The second Y-axis direction moving means 15 shares a pair of guide rails 121 with the first Y-axis direction moving means 12 . The second Y-axis platform 153 is disposed on a pair of guide rails 121 so as to be slidable along the guide rails 121 . The second Z-axis direction moving means 17 and the upper surface height measuring means 20 are mounted on the second Y-axis stage 153.

第2滾珠螺桿150係被螺合在被設在第2Y軸平台153的背面側的螺帽部(未圖示)。馬達152係連結於第2滾珠螺桿150的一端部，旋轉驅動第2滾珠螺桿150。藉由第2滾珠螺桿150被旋轉驅動，第2Y軸平台153、第2Z軸方向移動手段17、及上面高度測定手段20沿著導軌121以Y軸方向移動。The second ball screw 150 is screwed into a nut portion (not shown) provided on the back side of the second Y-axis stage 153 . The motor 152 is connected to one end of the second ball screw 150 and drives the second ball screw 150 to rotate. As the second ball screw 150 is rotationally driven, the second Y-axis stage 153, the second Z-axis direction moving means 17, and the upper surface height measuring means 20 move in the Y-axis direction along the guide rail 121.

第2Z軸方向移動手段17係具有與第1Z軸方向移動手段16同樣的構成，使上面高度測定手段20以Z軸方向往返移動。 第2Z軸方向移動手段17係包含：以Z軸方向延伸的一對導軌171、被載置於導軌171的第2支持構件173、與導軌171呈平行延伸的滾珠螺桿170、及使滾珠螺桿170旋轉的馬達172。The second Z-axis direction moving means 17 has the same structure as the first Z-axis direction moving means 16, and causes the upper surface height measuring means 20 to reciprocate in the Z-axis direction. The second Z-axis direction moving means 17 includes a pair of guide rails 171 extending in the Z-axis direction, a second support member 173 placed on the guide rails 171, a ball screw 170 extending in parallel with the guide rail 171, and a ball screw 170 that extends in the Z-axis direction. Rotating motor 172.

一對導軌171係與Z軸方向呈平行地被配置在第2Y軸平台153。第2支持構件173係可沿著該等導軌171滑動地被設置在一對導軌171上。在第2支持構件173的下端部係安裝有上面高度測定手段20。The pair of guide rails 171 are arranged on the second Y-axis stage 153 parallel to the Z-axis direction. The second support member 173 is provided on the pair of guide rails 171 so as to be slidable along the guide rails 171 . The upper surface height measuring means 20 is attached to the lower end of the second support member 173 .

滾珠螺桿170係被螺合在設在第2支持構件173的背面側的螺帽部(未圖示)。馬達172係連結於滾珠螺桿170的一端部，旋轉驅動滾珠螺桿170。藉由滾珠螺桿170被旋轉驅動，第2支持構件173及上面高度測定手段20沿著導軌171以Z軸方向移動。The ball screw 170 is screwed into a nut portion (not shown) provided on the back side of the second support member 173 . The motor 172 is connected to one end of the ball screw 170 and drives the ball screw 170 to rotate. When the ball screw 170 is rotationally driven, the second support member 173 and the upper surface height measuring means 20 move in the Z-axis direction along the guide rail 171 .

上面高度測定手段20係如圖5及圖6所示，由被保持在吸盤平台31的保持面313的貼合晶圓1的上面亦即晶圓2的背面2b側，測定貼合晶圓1的外周上面的高度。 貼合晶圓1的外周上面係晶圓2的外周部分的上面，例如晶圓2的背面2b中具有由外周緣7至以預定長度進入至內側的部分的範圍，亦即沿著外周緣7的預定寬幅的圓形帶狀的部分。貼合晶圓1的外周上面係包含晶圓2被切削的倒角部4(參照圖2)。As shown in FIGS. 5 and 6 , the upper surface height measuring means 20 measures the upper surface of the bonded wafer 1 held on the holding surface 313 of the suction cup stage 31 , that is, the back surface 2 b side of the wafer 2 . The height above the outer circumference. The upper surface of the outer periphery of the bonded wafer 1 is the upper surface of the outer peripheral part of the wafer 2. For example, the back surface 2b of the wafer 2 has a range from the outer peripheral edge 7 to a part that enters the inside by a predetermined length, that is, along the outer peripheral edge 7 A circular strip of predetermined width. The outer peripheral upper surface of the bonded wafer 1 includes the chamfered portion 4 where the wafer 2 is cut (see FIG. 2 ).

此外，貼合晶圓1的外周上面的高度係指例如由吸盤平台31的保持面313至貼合晶圓1的外周上面之沿著Z軸方向(參照圖5)的距離。In addition, the height above the outer circumference of the bonded wafer 1 means, for example, the distance from the holding surface 313 of the suction cup stage 31 to the upper surface of the outer circumference of the bonded wafer 1 along the Z-axis direction (see FIG. 5 ).

如圖5及圖6所示，上面高度測定手段20係具備：投出測定光的投光部21、將反射光聚光的聚光透鏡23、及接受反射光的受光感測器25。 由投光部21被投光的測定光係具有沿著貼合晶圓1的徑方向的預定寬幅。亦即，測定光係如圖6所示，被投光在以貼合晶圓1的徑方向延伸的測定範圍R。該測定範圍R係包含貼合晶圓1的外周上面。As shown in FIGS. 5 and 6 , the upper surface height measuring means 20 includes a light projecting unit 21 that projects measurement light, a condenser lens 23 that condenses reflected light, and a light-receiving sensor 25 that receives reflected light. The measurement light system emitted by the light emitting unit 21 has a predetermined width along the radial direction of the bonded wafer 1 . That is, as shown in FIG. 6 , the measurement light system is emitted in the measurement range R extending in the radial direction of the bonded wafer 1 . This measurement range R includes the upper surface of the outer circumference of the bonded wafer 1 .

聚光透鏡23係將來自貼合晶圓1的外周上面的反射光聚光。受光感測器25係以朝晶圓2的徑方向長形延伸的方式作配置。受光感測器25係將藉由聚光透鏡23所被聚光的反射光進行受光。The condenser lens 23 condenses the reflected light from the outer periphery of the bonded wafer 1 . The light-receiving sensor 25 is arranged to elongate in the radial direction of the wafer 2 . The light-receiving sensor 25 receives the reflected light condensed by the condenser lens 23 .

在本測定裝置中，根據藉由受光感測器25所受光到的反射光，求出上面高度測定手段20與測定範圍R內的外周上面之間的Z軸方向的距離亦即第1距離。接著，由上面高度測定手段20與保持面313之間的Z軸方向的距離亦即預定的第2距離，扣除第1距離，藉此測定外周上面的高度，亦即，由吸盤平台31的保持面313至外周上面的Z軸方向的距離。In this measuring device, the distance in the Z-axis direction between the upper surface height measuring means 20 and the upper surface of the outer circumference within the measurement range R is determined based on the reflected light received by the light receiving sensor 25, that is, the first distance. Next, the height of the upper surface of the outer circumference is measured by subtracting the first distance from the distance in the Z-axis direction between the upper surface height measuring means 20 and the holding surface 313 , that is, the predetermined second distance, that is, the height of the upper surface held by the suction cup platform 31 The distance in the Z-axis direction from the surface 313 to the upper surface of the outer circumference.

其中，以藉由受光感測器25所為之高度測定方法而言，係可適用關於測距反射形光電感測器之周知的測定方法。Among them, as a method of measuring the height by the light-receiving sensor 25, a well-known measuring method of a distance-measuring reflective photoelectric sensor can be applied.

圖3所示之控制手段70係具備記憶各種資料及程式的記憶手段71。控制手段70係執行各種處理，總括控制本邊緣修整裝置的各構成要素。The control means 70 shown in Figure 3 is equipped with a memory means 71 for storing various data and programs. The control means 70 executes various processes and collectively controls each component of the edge trimming device.

例如，在控制手段70係被輸入來自各種檢測器(未圖示)的檢測結果。此外，控制手段70係控制切削進給機構11、上面高度測定手段移動機構18、及保持手段30，決定上面高度測定手段20的測定範圍R，且實施外周上面高度的測定。For example, detection results from various detectors (not shown) are input to the control means 70 . In addition, the control means 70 controls the cutting feed mechanism 11, the upper surface height measuring means moving mechanism 18, and the holding means 30, determines the measurement range R of the upper surface height measuring means 20, and measures the outer peripheral upper surface height.

此外，控制手段70係控制切削進給機構11、切削手段移動機構13、保持手段30、及切削手段6，實施對貼合晶圓1之藉由切削刀63所為之切削加工(邊緣修整)。此時，控制手段70係控制第1Z軸方向移動手段16，來設定切削刀63的高度。In addition, the control means 70 controls the cutting feed mechanism 11 , the cutting means moving mechanism 13 , the holding means 30 , and the cutting means 6 to perform cutting processing (edge trimming) of the bonded wafer 1 with the cutting blade 63 . At this time, the control means 70 controls the first Z-axis direction moving means 16 to set the height of the cutting blade 63 .

接著，說明本邊緣修整裝置的動作。 (1)外周上面的高度的測定工程 在該工程中，首先，如圖7所示，藉由使用者，以貼合晶圓1的支持基板3與吸盤平台31的保持面313相接的方式，貼合晶圓1被載置於保持面313。之後，藉由來自未圖示的吸引源的吸引力，在保持面313產生負壓。保持面313係藉由該負壓，來吸引保持支持基板3的背面3b。藉此，貼合晶圓1在將晶圓2的背面2b朝上露出的狀態下，被吸附保持在保持面313。Next, the operation of this edge trimming device will be described. (1) Measurement process of the height above the outer circumference In this process, first, as shown in FIG. 7 , the user places the bonded wafer 1 on the holding surface 313 of the suction cup platform 31 in such a manner that the supporting substrate 3 of the bonded wafer 1 is in contact. Maintain surface 313. Thereafter, negative pressure is generated on the holding surface 313 by the attraction force from an attraction source (not shown). The holding surface 313 attracts and holds the back surface 3b of the support substrate 3 by this negative pressure. Thereby, the bonded wafer 1 is adsorbed and held on the holding surface 313 in a state where the back surface 2 b of the wafer 2 is exposed upward.

接著，根據使用者的指示，控制手段70(參照圖3)控制切削進給機構11、及上面高度測定手段移動機構18，設定相對於被保持在保持面313的貼合晶圓1的上面高度測定手段20的位置，亦即上面高度測定手段20的測定範圍R。Next, based on the user's instructions, the control means 70 (see FIG. 3 ) controls the cutting feed mechanism 11 and the upper surface height measuring means moving mechanism 18 to set the upper surface height of the bonded wafer 1 held on the holding surface 313 The position of the measuring means 20 is the measuring range R of the upper surface height measuring means 20 .

之後，控制手段70控制保持手段30的馬達317，使旋轉軸315以例如圖7所示之箭號C方向旋轉。藉此，保持貼合晶圓1的吸盤平台31(保持面313)連同旋轉軸315一起旋轉，貼合晶圓1相對上面高度測定手段20作旋轉。Thereafter, the control means 70 controls the motor 317 of the holding means 30 to rotate the rotation shaft 315 in, for example, the arrow C direction shown in FIG. 7 . Thereby, the suction cup stage 31 (holding surface 313) holding the bonded wafer 1 rotates together with the rotation axis 315, and the bonded wafer 1 rotates relative to the upper surface height measuring means 20.

若旋轉軸315旋轉，編碼器319逐次地檢測旋轉軸315的旋轉角度而傳達至控制手段70。其中，被載置於吸盤平台31的保持面313的貼合晶圓1亦連同旋轉軸315一起旋轉，因此旋轉軸315的旋轉角度亦為貼合晶圓1的旋轉角度。When the rotating shaft 315 rotates, the encoder 319 successively detects the rotation angle of the rotating shaft 315 and transmits it to the control means 70 . Among them, the bonded wafer 1 placed on the holding surface 313 of the suction cup platform 31 also rotates together with the rotation axis 315 , so the rotation angle of the rotation axis 315 is also the rotation angle of the bonded wafer 1 .

在外周上面的高度測定中，控制手段70係控制上面高度測定手段20的投光部21(參照圖5)，使測定光投光至圖7所示之測定範圍R。測定光係藉由測定範圍R中的晶圓2的外周上面而被反射。反射光係透過聚光透鏡23而被受光感測器25所受光。 控制手段70係根據被受光感測器25所受光的反射光，求出測定範圍R內的外周上面的高度。In measuring the height of the outer peripheral upper surface, the control means 70 controls the light emitting part 21 (see FIG. 5 ) of the upper surface height measuring means 20 to emit the measurement light to the measurement range R shown in FIG. 7 . The measurement light is reflected by the upper surface of the outer circumference of the wafer 2 in the measurement range R. The reflected light passes through the condenser lens 23 and is received by the light receiving sensor 25 . The control means 70 determines the height of the upper surface of the outer circumference within the measurement range R based on the reflected light received by the light-receiving sensor 25 .

其中，所被測定的貼合晶圓1的外周上面的高度係依貼合晶圓1的旋轉角度的變化(測定範圍R的變化)而變動。亦即，在構成貼合晶圓1的支持基板3的面內厚度係有不均。因此，晶圓2的背面2b及支持基板3的背面3b係具有按照面內厚度的不同的凹凸。因此，所被測定的貼合晶圓1的外周上面的高度係基於該凹凸，依測定範圍R的變化而變動。However, the measured height of the upper surface of the outer circumference of the bonded wafer 1 fluctuates according to changes in the rotation angle of the bonded wafer 1 (changes in the measurement range R). That is, the in-plane thickness of the support substrate 3 constituting the bonded wafer 1 is uneven. Therefore, the back surface 2b of the wafer 2 and the back surface 3b of the support substrate 3 have different unevenness depending on the in-plane thickness. Therefore, the measured height of the outer peripheral surface of the bonded wafer 1 fluctuates according to changes in the measurement range R based on the unevenness.

控制手段70係實施藉由上面高度測定手段20所為之外周上面的高度測定，至貼合晶圓1作一旋轉為止。接著，控制手段70係生成將藉由編碼器319所被檢測到的旋轉軸315的旋轉角度、與在各旋轉角度被測定到的外周上面的高度建立對應的對應資料，且記憶在記憶手段71。The control means 70 performs the height measurement of the upper surface of the outer circumference by the upper surface height measuring means 20 until the bonded wafer 1 makes one rotation. Next, the control means 70 generates correspondence data that associates the rotation angle of the rotation shaft 315 detected by the encoder 319 with the height above the outer circumference measured at each rotation angle, and stores it in the memory means 71 .

(2)邊緣修整工程 在該工程中，控制手段70係一邊調整切削刀63的高度，一邊切削貼合晶圓1的外周上面，藉此將晶圓2的倒角部4(參照圖2)去除。(2)Edge trimming project In this process, the control means 70 cuts the outer peripheral upper surface of the bonded wafer 1 while adjusting the height of the cutting blade 63, thereby removing the chamfered portion 4 (see FIG. 2) of the wafer 2.

關於該工程，控制手段70係事前控制第1Z軸方向移動手段16等，使切削刀63的下端接觸吸盤平台31的保持面313。此外，控制手段70係將此時的切削刀63的高度(沿著Z方向的位置)，設定為切削刀63的高度的原點。亦即，在本實施形態中，切削刀63的高度係切削刀63與切削刀63的保持面313之間之沿著Z方向的距離。Regarding this process, the control means 70 controls the first Z-axis direction moving means 16 and the like in advance so that the lower end of the cutting blade 63 contacts the holding surface 313 of the suction cup platform 31 . In addition, the control means 70 sets the height of the cutting blade 63 at this time (the position along the Z direction) as the origin of the height of the cutting blade 63 . That is, in this embodiment, the height of the cutting blade 63 is the distance along the Z direction between the cutting blade 63 and the holding surface 313 of the cutting blade 63 .

在邊緣修整工程中，首先，控制手段70係控制切削進給機構11及第1Y軸方向移動手段12(參照圖3)，如圖6及圖7所示，將相對於被保持在保持面313的貼合晶圓1的切削刀63的位置(在XY面內的位置)，以切削刀63配設在貼合晶圓1的外周上面上的方式進行設定。此外，控制手段70係控制切削手段6的馬達，透過心軸60而使切削刀63旋轉。In the edge trimming process, first, the control means 70 controls the cutting feed mechanism 11 and the first Y-axis direction moving means 12 (refer to FIG. 3 ). As shown in FIGS. 6 and 7 , the control means 70 controls the cutting feed mechanism 11 and the first Y-axis direction moving means 12 , as shown in FIGS. 6 and 7 . The position of the cutting blade 63 of the bonded wafer 1 (the position in the XY plane) is set so that the cutting blade 63 is disposed on the outer peripheral surface of the bonded wafer 1 . In addition, the control means 70 controls the motor of the cutting means 6 to rotate the cutting blade 63 through the spindle 60 .

此外，控制手段70係控制保持手段30的馬達317，使旋轉軸315以例如圖7所示之箭號C方向旋轉。藉此，保持貼合晶圓1的保持面313連同旋轉軸315一起旋轉，貼合晶圓1相對切削刀63作旋轉。 若旋轉軸315被旋轉，編碼器319逐次地檢測旋轉軸315的旋轉角度而傳達至控制手段70。In addition, the control means 70 controls the motor 317 of the holding means 30 to rotate the rotation shaft 315 in, for example, the arrow C direction shown in FIG. 7 . Thereby, the holding surface 313 holding the bonded wafer 1 rotates together with the rotation axis 315 , and the bonded wafer 1 rotates relative to the cutting blade 63 . When the rotating shaft 315 is rotated, the encoder 319 successively detects the rotation angle of the rotating shaft 315 and transmits it to the control means 70 .

控制手段70係由被記憶在記憶手段71的對應資料，叫出藉由編碼器319被檢測到的旋轉角度所對應的貼合晶圓1的外周上面高度。接著，控制手段70係藉由控制第1Z軸方向移動手段16而使切削刀63上下動，以切削刀63對貼合晶圓1的外周上面的切入深度成為大致一定的方式，將切削刀63的高度設定為按照所叫出的貼合晶圓1的外周上面高度的高度。The control means 70 calls the outer peripheral upper surface height of the bonded wafer 1 corresponding to the rotation angle detected by the encoder 319 from the corresponding data stored in the memory means 71 . Next, the control means 70 controls the first Z-axis direction moving means 16 to move the cutting blade 63 up and down, so that the cutting depth of the cutting blade 63 on the outer peripheral surface of the bonded wafer 1 becomes substantially constant. The height of is set to a height corresponding to the called upper surface height of the outer circumference of the bonded wafer 1 .

如上所示，控制手段70係以切削刀63對貼合晶圓1的外周上面的切入深度成為大致一定的方式，一邊調整切削刀63的高度，一邊切削貼合晶圓1的外周上面。接著，控制手段70係最終如圖8所示，將切削刀63的高度下降至接著構件J被稍微切削的程度的位置為止。藉此，晶圓2的倒角部4即被切除。As described above, the control means 70 cuts the outer peripheral upper surface of the bonded wafer 1 while adjusting the height of the cutting blade 63 so that the cutting depth of the cutting blade 63 into the outer peripheral upper surface of the bonded wafer 1 becomes substantially constant. Next, the control means 70 finally lowers the height of the cutting blade 63 to a position where the member J is slightly cut, as shown in FIG. 8 . Thereby, the chamfered portion 4 of the wafer 2 is cut off.

如以上所示，在本邊緣修整裝置中，控制手段70生成將藉由編碼器319被檢測到的旋轉軸315的旋轉角度、與在各旋轉角度被測定到的貼合晶圓1中的外周上面的高度建立對應的對應資料，且記憶在記憶手段71。藉此，控制手段70係可良好地掌握貼合晶圓1中的外周上面的高度的不均。As described above, in this edge trimming device, the control means 70 generates a combination of the rotation angle of the rotation shaft 315 detected by the encoder 319 and the outer circumference of the bonded wafer 1 measured at each rotation angle. The above height establishes corresponding corresponding information, and is memorized in the memory means 71. Thereby, the control means 70 can well grasp the height unevenness on the upper surface of the outer periphery of the bonded wafer 1 .

此外，在本邊緣修整裝置中，控制手段70係可根據對應資料，來掌握旋轉軸315的旋轉角度所對應的貼合晶圓1的外周上面的高度。接著，控制手段70係可按照所掌握到的外周上面的高度，來設定切削刀63的高度。亦即，控制手段70係可藉由使切削刀63相對貼合晶圓1的外周上面進行上下動，來調整切削刀63的高度。 藉此，在本邊緣修整裝置中，可將切削刀63對貼合晶圓1的外周上面的切入深度，輕易地形成為大致一定。接著，藉由將切削刀63切入深度形成為大致一定，可減小切削刀63的消耗。In addition, in this edge trimming device, the control means 70 can grasp the height above the outer circumference of the bonded wafer 1 corresponding to the rotation angle of the rotation axis 315 based on the corresponding data. Then, the control means 70 can set the height of the cutting blade 63 according to the obtained height above the outer circumference. That is, the control means 70 can adjust the height of the cutting blade 63 by moving the cutting blade 63 up and down relative to the outer peripheral surface of the bonded wafer 1 . Thereby, in this edge trimming device, the cutting depth of the cutting blade 63 on the outer peripheral surface of the bonded wafer 1 can be easily formed to be substantially constant. Next, by making the cutting depth of the cutting blade 63 substantially constant, consumption of the cutting blade 63 can be reduced.

此外，在本實施形態中，在邊緣修整工程中，切削刀63的高度下降至接著構件J被稍微切削的程度的位置為止。因此，可抑制支持基板3被切削的情形，因此可再利用支持基板3。 此外，切削刀63係被下降至接著構件J被稍微切削的位置，因此不會有接著構件J附著在切削刀63而使切削不良發生的情形。In addition, in this embodiment, during the edge trimming process, the height of the cutting blade 63 is lowered to a position where the member J is slightly cut. Therefore, the support substrate 3 can be suppressed from being cut, so the support substrate 3 can be reused. In addition, since the cutting blade 63 is lowered to a position where the bonding member J is slightly cut, there is no possibility that the bonding member J will adhere to the cutting blade 63 and cause cutting failure.

其中，在本實施形態中，外周上面的高度的測定工程係藉由控制手段70的控制來實施。但是，外周上面的高度的測定工程亦可藉由利用其他外部的控制裝置或使用者所為之控制來實施。 此外，在邊緣修整工程的切削開始時的旋轉軸315的旋轉角度(位置)亦可為由旋轉角度的原點旋轉任意角度的位置。In this embodiment, the measurement process of the height of the upper surface of the outer circumference is carried out under the control of the control means 70 . However, the measurement process of the height above the outer periphery can also be implemented by using other external control devices or controlling it by the user. In addition, the rotation angle (position) of the rotation axis 315 at the start of cutting in the edge dressing process may be a position rotated by any angle from the origin of the rotation angle.

此外，在本實施形態中，係使用接著構件J，來作為用以將晶圓2與支持基板3相貼合的貼合構件。亦可取代此，使用具有3μm左右的厚度的氧化膜，作為貼合構件。 此外，在邊緣修整工程中，亦可藉由切削刀63，來切除支持基板3的外周部，亦即，支持基板3中的晶圓2的倒角部4所對應的部分。In addition, in this embodiment, the bonding member J is used as a bonding member for bonding the wafer 2 and the support substrate 3 . Instead of this, an oxide film having a thickness of about 3 μm may be used as the bonding member. In addition, during the edge trimming process, the cutting blade 63 can also be used to cut off the outer peripheral portion of the supporting substrate 3 , that is, the portion of the supporting substrate 3 corresponding to the chamfered portion 4 of the wafer 2 .

1:貼合晶圓 2:晶圓 2a:表面 2b:背面 3:支持基板 3a:表面 3b:背面 4:倒角部 6:切削手段 7:外周緣 10:基台 11:切削進給機構 12:第1Y軸方向移動手段 13:切削手段移動機構 14:門型支柱 15:第2Y軸方向移動手段 16:第1Z軸方向移動手段 17:第2Z軸方向移動手段 18:上面高度測定手段移動機構 20:上面高度測定手段 21:投光部 23:聚光透鏡 25:受光感測器 30:保持手段 31:吸盤平台 32:平台基座 60:心軸 61:殼體 63:切削刀 70:控制手段 71:記憶手段 110:滾珠螺桿 111:導軌 112:馬達 113:X軸平台 120:第1滾珠螺桿 121:導軌 123:第1Y軸平台 160:滾珠螺桿 161:導軌 162:馬達 163:第1支持構件 170:滾珠螺桿 171:導軌 172:馬達 173:第2支持構件 312:吸附部 313:保持面 314:框體 315:旋轉軸 317:馬達 319:編碼器 D:元件 J:接著構件 R:測定範圍1:Lay the wafer 2:wafer 2a: Surface 2b: Back 3:Support substrate 3a: Surface 3b: Back 4: chamfer part 6: Cutting means 7: Outer periphery 10:Abutment 11: Cutting feed mechanism 12: 1st Y-axis direction movement means 13: Cutting means moving mechanism 14: Door type pillar 15: The second Y-axis direction movement method 16: 1st Z-axis direction movement means 17: 2nd Z-axis direction movement means 18:Moving mechanism of upper height measurement means 20:Measurement of height above 21:Light projection department 23: condenser lens 25:Light sensor 30:Keep your means 31: Suction cup platform 32:Platform base 60: mandrel 61: Shell 63:Cutter 70:Control means 71: Memory means 110: Ball screw 111: Guide rail 112: Motor 113:X-axis platform 120: 1st ball screw 121: Guide rail 123: 1st Y-axis platform 160: Ball screw 161: Guide rail 162: Motor 163: 1st support member 170: Ball screw 171: Guide rail 172:Motor 173: Second support member 312: Adsorption part 313:Keep the surface 314:frame 315:Rotation axis 317: Motor 319:Encoder D: component J: Then the component R: measuring range

圖1係本發明之一實施形態之邊緣修整裝置(本邊緣修整裝置)的測定對象亦即貼合晶圓的斜視圖。 圖2係貼合晶圓的剖面圖。 圖3係顯示本邊緣修整裝置的構成的斜視圖。 圖4係具有保持貼合晶圓的保持面的保持手段的剖面圖。 圖5係顯示本邊緣修整裝置的上面高度測定手段及吸盤平台的說明圖。 圖6係顯示本邊緣修整裝置的上面高度測定手段及其測定範圍的說明圖。 圖7係顯示本邊緣修整裝置中的外周上面的高度測定的說明圖。 圖8係顯示本邊緣修整裝置中的邊緣修整的說明圖。FIG. 1 is a perspective view of a bonded wafer that is a measurement target of an edge trimming device (this edge trimming device) according to an embodiment of the present invention. Figure 2 is a cross-sectional view of the bonded wafer. Figure 3 is a perspective view showing the structure of this edge trimming device. FIG. 4 is a cross-sectional view of a holding means having a holding surface holding a bonded wafer. Figure 5 is an explanatory diagram showing the upper height measuring means and the suction cup platform of the edge trimming device. FIG. 6 is an explanatory diagram showing the upper surface height measuring means and its measuring range of the edge trimming device. FIG. 7 is an explanatory diagram showing the height measurement above the outer circumference of the edge trimming device. FIG. 8 is an explanatory diagram showing edge trimming in this edge trimming device.

1:貼合晶圓 1:Lay the wafer

2:晶圓 2:wafer

3:支持基板 3:Support substrate

6:切削手段 6: Cutting means

12:第1Y軸方向移動手段 12: 1st Y-axis direction movement means

13:切削手段移動機構 13: Cutting means moving mechanism

16:第1Z軸方向移動手段 16: 1st Z-axis direction movement means

31:吸盤平台 31: Suction cup platform

60:心軸 60: mandrel

61:殼體 61: Shell

63:切削刀 63:Cutter

312:吸附部 312: Adsorption part

313:保持面 313:Keep the surface

314:框體 314:Frame

J:接著構件 J: Then the component

Claims (1)

一種邊緣修整裝置，其係以切削刀切削將在外周緣具有倒角部的晶圓與支持基板以貼合構件相貼合的貼合晶圓的該倒角部的邊緣修整裝置，其係具備：保持手段，其係具有接觸該支持基板且以該貼合晶圓的該晶圓成為上面側的方式保持該貼合晶圓的保持面；切削手段，其係使在前端裝設有該切削刀的心軸旋轉，且切削被保持在該保持面的該貼合晶圓的該晶圓的該倒角部；Z軸方向移動手段，其係以相對該保持面呈垂直的Z軸方向，使該切削手段移動；上面高度測定手段，其係由被保持在該保持面的該貼合晶圓的上面側，測定該貼合晶圓的該晶圓的外周上面的高度；記憶手段；及控制手段，該保持手段係具備：吸盤平台，其係具有該保持面；旋轉軸，其係以該保持面的中心為軸心且連結於該吸盤平台；馬達，其係使該旋轉軸旋轉；及編碼器，其係檢測該旋轉軸的旋轉角度，該記憶手段係記憶將該旋轉軸旋轉時，藉由該編碼器 被檢測到的旋轉角度；及在該旋轉角度中藉由該上面高度測定手段被測定到的外周上面高度建立對應的對應資料，該控制手段係使該旋轉軸旋轉，由該對應資料叫出藉由該編碼器被檢測到的旋轉角度所對應的該外周上面高度，且按照所叫出的該外周上面高度，以切削刀對該外周上面的切入深度成為大致一定的方式設定該切削刀的高度來切削該外周上面，藉此將該貼合晶圓的該晶圓的該倒角部切除。 An edge trimming device is an edge trimming device that uses a cutting blade to cut the chamfered portion of a bonded wafer by bonding a wafer with a chamfered portion on its outer peripheral edge to a support substrate using a bonding member, and is provided with: a holding means that has a holding surface that contacts the support substrate and holds the bonded wafer so that the wafer becomes the upper side; and a cutting means that has the cutting blade installed at the front end The mandrel rotates and cuts the chamfered portion of the bonded wafer held on the holding surface; the Z-axis direction moving means is in a Z-axis direction perpendicular to the holding surface so that The cutting means moves; the upper surface height measuring means measures the height of the upper surface of the outer circumference of the bonded wafer from the upper surface side of the bonded wafer held on the holding surface; the memory means; and control Means, the holding means is provided with: a suction cup platform having the holding surface; a rotating shaft having the center of the holding surface as an axis and connected to the suction cup platform; a motor rotating the rotating shaft; and An encoder is used to detect the rotation angle of the rotating shaft, and the memory means is used to remember the rotation angle of the rotating shaft through the encoder. The detected rotation angle; and in the rotation angle, the upper surface height of the outer circumference measured by the upper surface height measuring means establishes corresponding corresponding data. The control means rotates the rotation axis, and the corresponding data is called The height of the upper surface of the outer circumference corresponds to the rotation angle detected by the encoder, and the height of the cutting blade is set so that the cutting depth of the upper surface of the outer circumference becomes approximately constant. The outer peripheral surface is cut to remove the chamfered portion of the bonded wafer.
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