TWI800831B - 半導體裝置和製造半導體裝置的方法 - Google Patents
半導體裝置和製造半導體裝置的方法 Download PDFInfo
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- TWI800831B TWI800831B TW110117600A TW110117600A TWI800831B TW I800831 B TWI800831 B TW I800831B TW 110117600 A TW110117600 A TW 110117600A TW 110117600 A TW110117600 A TW 110117600A TW I800831 B TWI800831 B TW I800831B
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- 238000004519 manufacturing process Methods 0.000 title 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US202063055045P | 2020-07-22 | 2020-07-22 | |
US63/055,045 | 2020-07-22 | ||
US17/157,330 US11527653B2 (en) | 2020-07-22 | 2021-01-25 | Semiconductor device and method of manufacture |
US17/157,330 | 2021-01-25 |
Publications (2)
Publication Number | Publication Date |
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TW202205435A TW202205435A (zh) | 2022-02-01 |
TWI800831B true TWI800831B (zh) | 2023-05-01 |
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TW110117600A TWI800831B (zh) | 2020-07-22 | 2021-05-14 | 半導體裝置和製造半導體裝置的方法 |
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US (3) | US11527653B2 (zh) |
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US11527653B2 (en) * | 2020-07-22 | 2022-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of manufacture |
US20230187265A1 (en) | 2021-12-15 | 2023-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stress Modulation Using STI Capping Layer for Reducing Fin Bending |
US20230238271A1 (en) | 2022-01-26 | 2023-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor Device and Method |
US20230268426A1 (en) * | 2022-02-21 | 2023-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dummy fin structures and methods of forming same |
CN116799005B (zh) * | 2023-08-22 | 2023-11-28 | 合肥晶合集成电路股份有限公司 | 一种半导体结构及其制备方法 |
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US20230103640A1 (en) | 2023-04-06 |
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TW202205435A (zh) | 2022-02-01 |
DE102021101880A1 (de) | 2022-01-27 |
US11942549B2 (en) | 2024-03-26 |
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