TWI799936B - 半導體裝置及形成半導體裝置之方法 - Google Patents
半導體裝置及形成半導體裝置之方法 Download PDFInfo
- Publication number
- TWI799936B TWI799936B TW110128990A TW110128990A TWI799936B TW I799936 B TWI799936 B TW I799936B TW 110128990 A TW110128990 A TW 110128990A TW 110128990 A TW110128990 A TW 110128990A TW I799936 B TWI799936 B TW I799936B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- forming
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
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- H01L29/66484—
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- H01L29/78645—
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- H01L29/66969—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L29/0657—
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- H01L29/4238—
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- H01L29/42384—
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- H01L29/4908—
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- H01L29/685—
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- H01L29/7606—
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- H01L29/778—
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- H01L29/7831—
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- H01L29/78648—
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- H01L29/78681—
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- H01L29/78696—
-
- H01L29/788—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L29/0692—
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- H01L29/24—
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- H01L29/40111—
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- H01L29/40114—
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- H01L29/7869—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063118141P | 2020-11-25 | 2020-11-25 | |
US63/118,141 | 2020-11-25 | ||
US202163134256P | 2021-01-06 | 2021-01-06 | |
US63/134,256 | 2021-01-06 | ||
US17/324,893 | 2021-05-19 | ||
US17/324,893 US11670720B2 (en) | 2020-11-25 | 2021-05-19 | Semiconductor device and method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202221794A TW202221794A (zh) | 2022-06-01 |
TWI799936B true TWI799936B (zh) | 2023-04-21 |
Family
ID=80601384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110128990A TWI799936B (zh) | 2020-11-25 | 2021-08-05 | 半導體裝置及形成半導體裝置之方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US11670720B2 (zh) |
KR (1) | KR102597962B1 (zh) |
CN (1) | CN114188224A (zh) |
DE (1) | DE102021113520A1 (zh) |
TW (1) | TWI799936B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023219570A1 (en) * | 2022-05-12 | 2023-11-16 | Nanyang Technological University | Transistor and method of forming the same |
CN115483095A (zh) * | 2022-10-17 | 2022-12-16 | 珠海创飞芯科技有限公司 | 一种半导体器件及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150062475A1 (en) * | 2013-09-05 | 2015-03-05 | Samsung Electronics Co., Ltd. | Thin film transistor and method of driving same |
US20180114839A1 (en) * | 2016-10-25 | 2018-04-26 | National Taiwan University | Field effect transistor using transition metal dichalcogenide and a method for manufacturing the same |
US20190019894A1 (en) * | 2012-04-06 | 2019-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, method for manufacturing semiconductor device, and semiconductor device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7026713B2 (en) | 2003-12-17 | 2006-04-11 | Hewlett-Packard Development Company, L.P. | Transistor device having a delafossite material |
US7642573B2 (en) | 2004-03-12 | 2010-01-05 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
KR101403409B1 (ko) | 2010-04-28 | 2014-06-03 | 한국전자통신연구원 | 반도체 장치 및 그 제조 방법 |
KR20170041433A (ko) | 2015-10-07 | 2017-04-17 | 경희대학교 산학협력단 | 듀얼 게이트 박막 트랜지스터 및 그의 제조 방법 |
US10134915B2 (en) | 2016-12-15 | 2018-11-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | 2-D material transistor with vertical structure |
KR102418493B1 (ko) | 2017-10-24 | 2022-07-06 | 엘지디스플레이 주식회사 | 이차원 반도체를 포함하는 박막 트랜지스터 및 이를 포함하는 표시장치 |
JP2019161182A (ja) | 2018-03-16 | 2019-09-19 | 株式会社リコー | 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム |
JP7508374B2 (ja) * | 2018-12-28 | 2024-07-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US20220149192A1 (en) * | 2020-11-09 | 2022-05-12 | Intel Corporation | Thin film transistors having electrostatic double gates |
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2021
- 2021-05-19 US US17/324,893 patent/US11670720B2/en active Active
- 2021-05-26 DE DE102021113520.6A patent/DE102021113520A1/de active Pending
- 2021-07-14 KR KR1020210092215A patent/KR102597962B1/ko active IP Right Grant
- 2021-08-05 TW TW110128990A patent/TWI799936B/zh active
- 2021-09-28 CN CN202111145868.7A patent/CN114188224A/zh active Pending
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2023
- 2023-04-20 US US18/303,924 patent/US12027628B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190019894A1 (en) * | 2012-04-06 | 2019-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, method for manufacturing semiconductor device, and semiconductor device |
US20150062475A1 (en) * | 2013-09-05 | 2015-03-05 | Samsung Electronics Co., Ltd. | Thin film transistor and method of driving same |
US20180114839A1 (en) * | 2016-10-25 | 2018-04-26 | National Taiwan University | Field effect transistor using transition metal dichalcogenide and a method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
DE102021113520A1 (de) | 2022-05-25 |
US20230253503A1 (en) | 2023-08-10 |
US12027628B2 (en) | 2024-07-02 |
KR102597962B1 (ko) | 2023-11-02 |
KR20220072720A (ko) | 2022-06-02 |
US11670720B2 (en) | 2023-06-06 |
TW202221794A (zh) | 2022-06-01 |
CN114188224A (zh) | 2022-03-15 |
US20220165871A1 (en) | 2022-05-26 |
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