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TWI799936B - 半導體裝置及形成半導體裝置之方法 - Google Patents

半導體裝置及形成半導體裝置之方法 Download PDF

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Publication number
TWI799936B
TWI799936B TW110128990A TW110128990A TWI799936B TW I799936 B TWI799936 B TW I799936B TW 110128990 A TW110128990 A TW 110128990A TW 110128990 A TW110128990 A TW 110128990A TW I799936 B TWI799936 B TW I799936B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
forming
semiconductor
Prior art date
Application number
TW110128990A
Other languages
English (en)
Other versions
TW202221794A (zh
Inventor
鍾昀晏
鄭兆欽
簡昭欣
Original Assignee
台灣積體電路製造股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202221794A publication Critical patent/TW202221794A/zh
Application granted granted Critical
Publication of TWI799936B publication Critical patent/TWI799936B/zh

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Classifications

    • H01L29/66484
    • H01L29/78645
    • H01L29/66969
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H01L29/0657
    • H01L29/4238
    • H01L29/42384
    • H01L29/4908
    • H01L29/685
    • H01L29/7606
    • H01L29/778
    • H01L29/7831
    • H01L29/78648
    • H01L29/78681
    • H01L29/78696
    • H01L29/788
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02568Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • H01L29/0692
    • H01L29/24
    • H01L29/40111
    • H01L29/40114
    • H01L29/7869

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
TW110128990A 2020-11-25 2021-08-05 半導體裝置及形成半導體裝置之方法 TWI799936B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US202063118141P 2020-11-25 2020-11-25
US63/118,141 2020-11-25
US202163134256P 2021-01-06 2021-01-06
US63/134,256 2021-01-06
US17/324,893 2021-05-19
US17/324,893 US11670720B2 (en) 2020-11-25 2021-05-19 Semiconductor device and method

Publications (2)

Publication Number Publication Date
TW202221794A TW202221794A (zh) 2022-06-01
TWI799936B true TWI799936B (zh) 2023-04-21

Family

ID=80601384

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110128990A TWI799936B (zh) 2020-11-25 2021-08-05 半導體裝置及形成半導體裝置之方法

Country Status (5)

Country Link
US (2) US11670720B2 (zh)
KR (1) KR102597962B1 (zh)
CN (1) CN114188224A (zh)
DE (1) DE102021113520A1 (zh)
TW (1) TWI799936B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023219570A1 (en) * 2022-05-12 2023-11-16 Nanyang Technological University Transistor and method of forming the same
CN115483095A (zh) * 2022-10-17 2022-12-16 珠海创飞芯科技有限公司 一种半导体器件及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150062475A1 (en) * 2013-09-05 2015-03-05 Samsung Electronics Co., Ltd. Thin film transistor and method of driving same
US20180114839A1 (en) * 2016-10-25 2018-04-26 National Taiwan University Field effect transistor using transition metal dichalcogenide and a method for manufacturing the same
US20190019894A1 (en) * 2012-04-06 2019-01-17 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026713B2 (en) 2003-12-17 2006-04-11 Hewlett-Packard Development Company, L.P. Transistor device having a delafossite material
US7642573B2 (en) 2004-03-12 2010-01-05 Hewlett-Packard Development Company, L.P. Semiconductor device
KR101403409B1 (ko) 2010-04-28 2014-06-03 한국전자통신연구원 반도체 장치 및 그 제조 방법
KR20170041433A (ko) 2015-10-07 2017-04-17 경희대학교 산학협력단 듀얼 게이트 박막 트랜지스터 및 그의 제조 방법
US10134915B2 (en) 2016-12-15 2018-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. 2-D material transistor with vertical structure
KR102418493B1 (ko) 2017-10-24 2022-07-06 엘지디스플레이 주식회사 이차원 반도체를 포함하는 박막 트랜지스터 및 이를 포함하는 표시장치
JP2019161182A (ja) 2018-03-16 2019-09-19 株式会社リコー 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム
JP7508374B2 (ja) * 2018-12-28 2024-07-01 株式会社半導体エネルギー研究所 半導体装置
US20220149192A1 (en) * 2020-11-09 2022-05-12 Intel Corporation Thin film transistors having electrostatic double gates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190019894A1 (en) * 2012-04-06 2019-01-17 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US20150062475A1 (en) * 2013-09-05 2015-03-05 Samsung Electronics Co., Ltd. Thin film transistor and method of driving same
US20180114839A1 (en) * 2016-10-25 2018-04-26 National Taiwan University Field effect transistor using transition metal dichalcogenide and a method for manufacturing the same

Also Published As

Publication number Publication date
DE102021113520A1 (de) 2022-05-25
US20230253503A1 (en) 2023-08-10
US12027628B2 (en) 2024-07-02
KR102597962B1 (ko) 2023-11-02
KR20220072720A (ko) 2022-06-02
US11670720B2 (en) 2023-06-06
TW202221794A (zh) 2022-06-01
CN114188224A (zh) 2022-03-15
US20220165871A1 (en) 2022-05-26

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