TWI730821B - Multiple patterning method - Google Patents

Abstract

A multiple patterning method including the following steps is provided. A sacrificial layer is formed on a material layer. The sacrificial layer includes a plurality of sacrificial patterns and a plurality of first gaps that are alternately arranged. A plurality of first liner structures is formed in the plurality of the first gaps. Each first liner structure includes a plurality of first liner layers and at least one second liner layer that are alternately arranged. Two of the first liner layers in the first liner structure are respectively located at sidewalls of two adjacent sacrificial patterns. The sacrificial patterns are removed to form a plurality of second gaps. A plurality of second liner structures is formed in the second gaps. Each second liner structure includes a plurality of the second liner layers and at least one of the first liner layer that are alternately arranged. Two of the second liner layers in the second liner structure are respectively located at sidewalls of two adjacent first liner structures.

Description

Multiple patterning methods

The present invention relates to a semiconductor manufacturing process, and particularly relates to a multiple patterning method.

As semiconductor components are developing towards miniaturization with the goal of higher integration, the size of semiconductor components must be reduced to increase their integration. In order to reduce the size of semiconductor devices, reducing line width, reducing line spacing, and improving the accuracy of pattern transfer are issues that must be resolved.

The self-aligned multiple patterning (SAxP) process is a means to solve the above-mentioned problems, such as the self-aligned double patterning (SADP) process and the self-aligned quadruple patterning ( Self-aligned quadruple patterning (SAQP) process or self-aligned octuple patterning (SAOP) process, etc.

However, the traditional self-aligned multiple patterning process is difficult to flexibly adjust the number and width of the target pattern, which makes the process lacking flexibility.

The present invention provides a multiple patterning method, which can make the manufacturing process more flexible.

The present invention provides a multiple patterning method, including the following steps. Provide material layer. A sacrificial layer is formed on the material layer. The sacrificial layer includes a plurality of sacrificial patterns and a plurality of first gaps alternately arranged. A plurality of first liner structures are formed in the plurality of first gaps. Each first liner structure includes a plurality of first liner layers and at least one second liner layer alternately arranged. The two first lining layers in the first lining layer structure are respectively located on the sidewalls of two adjacent sacrificial patterns. The plurality of sacrificial patterns are removed to form a plurality of second gaps. A plurality of second liner structures are formed in the plurality of second gaps. Each second lining layer structure includes a plurality of second lining layers and at least one first lining layer alternately arranged. The two second lining layers in the second lining layer structure are respectively located on the sidewalls of two adjacent first lining layer structures. The first lining layer structure and the second lining layer structure form alternately arranged first lining layer and second lining layer.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, the method for forming the first liner structure may include alternately forming the first liner layer and the second liner layer in the first gap in order to fill up First gap.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, the method of forming the first liner layer and the second liner layer in the first gap may include the following steps. A first liner material layer is conformally formed in the first gap. An etch-back process is performed on the first liner material layer to form the first liner layer. A second liner material layer is conformally formed in the first gap. An etch-back process is performed on the second liner material layer to form a second liner layer.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, the method for forming the second liner structure may include alternately forming the second liner layer and the first liner layer in the second gap to fill the The second gap.

According to an embodiment of the present invention, in the above multiple patterning method, the method of forming the second liner layer and the first liner layer in the second gap may include the following steps. A second liner material layer is conformally formed in the second gap. An etch-back process is performed on the second liner material layer to form a second liner layer. A first liner material layer is conformally formed in the second gap. An etch-back process is performed on the first liner material layer to form the first liner layer.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, the material of the material layer, the material of the sacrificial pattern, the material of the first liner layer and the material of the second liner layer may be different in the same etch-back process. Etching rate.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, the material of the material layer, the material of the sacrificial pattern, the material of the first liner layer and the material of the second liner layer may not generate a chemical reaction.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, before removing the sacrificial pattern, a plurality of first liner structures can respectively fill a plurality of first gaps.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, after the sacrificial pattern is removed, the plurality of first liner structures fill the plurality of first gaps respectively.

According to an embodiment of the present invention, the above-mentioned multiple patterning method may further include the following steps. After the second liner structure is formed, the first liner is removed. Using the second liner layer as a mask, the material layer is patterned to form multiple target patterns.

According to an embodiment of the present invention, the above-mentioned multiple patterning method may further include the following steps. After the second liner structure is formed, the second liner is removed. Using the first liner layer as a mask, the material layer is patterned to form multiple target patterns.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, the width of the first gap and the width of the second gap may be the same.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, the width of the first gap and the width of the second gap may be different.

According to an embodiment of the present invention, in the above multiple patterning method, the width of the first liner layer and the width of the second liner layer may be the same.

According to an embodiment of the present invention, in the above multiple patterning method, the width of the first liner layer and the width of the second liner layer may be different.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, the widths of the plurality of first liner layers may be the same.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, the widths of the plurality of first liner layers may be different.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, the widths of the plurality of second liner layers may be the same.

According to an embodiment of the present invention, in the above-mentioned multiple patterning method, the widths of the plurality of second liner layers may be different.

Based on the above, in the multiple patterning method proposed by the present invention, a first liner structure including alternately arranged first liner layers and second liner layers is formed in the first gap, and then the first liner structure is formed in the second gap. The second liner structure of the alternately arranged second liner layer and the first liner layer. In this way, the width of the first gap and the second gap, the number and width of the first liner and the second liner formed in the first gap, and the first gap formed in the second gap can be flexibly adjusted according to requirements. The number and width of the second lining layer and the first lining layer, etc. Therefore, when using the first liner or the second liner as a mask to pattern the material layer, the number and number of target patterns can be flexibly adjusted by designing the pattern of the first liner or the second liner. Width, which makes the process more flexible. In addition, the first lining layer or the second lining layer can be selected as the mask according to requirements, thereby further improving the flexibility of the manufacturing process.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

1A to 1N are cross-sectional views of a patterning process according to an embodiment of the invention.

1A, a material layer 102 is provided. For example, the material layer 102 can be provided on the substrate 100. The substrate 100 may be a semiconductor substrate, such as a silicon substrate. The material layer 102 can be used as a film layer to be patterned. The material of the material layer 102 is, for example, silicon nitride, silicon dioxide (silica), silicon oxynitride, silicon carbon, or silicon carbon nitride. The formation method of the material layer 102 is, for example, a chemical vapor deposition method, a physical vapor deposition method (PVD) or a spin-on coating method. In other embodiments, the substrate 100 can be used as a material layer to be patterned, and whether to omit the material layer 102 can be determined according to requirements.

Next, a sacrificial layer 104 is formed on the material layer 102. The sacrificial layer 104 includes a plurality of sacrificial patterns 106 and a plurality of first gaps G1 alternately arranged. The material of the sacrificial pattern 106 is, for example, carbon, silicon, silicon nitride, silicon dioxide, germanium, silicon germanium (SiGe), polysilicon (polysilicon), silicon oxynitride (SiON), or silicon carbide (SiC). The method for forming the sacrificial layer 104 is, for example, first forming a sacrificial material layer (not shown), and then patterning the sacrificial material layer by a photolithography process. The method for forming the sacrificial material layer is, for example, a chemical vapor deposition method, a physical vapor deposition method, or a spin coating method.

1B to 1F, a plurality of first liner structures LS1 are formed in a plurality of first gaps G1. 1F, each first liner structure LS1 includes a plurality of first liner layers 108a and at least one second liner layer 110a alternately arranged. The two first liner layers 108a in the first liner structure LS1 are respectively located on the sidewalls of two adjacent sacrificial patterns 106. The two first liner layers 108 a in the first liner structure LS1 may be located at two opposite ends of the first liner structure LS1 and adjacent to two adjacent sacrificial patterns 106. The method for forming the first liner structure LS1 may include alternately forming the first liner 108a and the second liner 110a in the first gap G1 in order to fill the first gap G1, as illustrated below.

1B, a first liner material layer 108 is conformally formed in the first gap G1. The material of the first liner material layer 108 is, for example, tungsten (W), titanium nitride (TiN), titanium oxide (TiO), silicon nitride, silicon dioxide, silicon oxynitride, silicon carbonitride, amorphous silicon (amorphous silicon). silicon) or polysilicon. The formation method of the first liner material layer 108 is, for example, atomic layer deposition (ALD), such as plasma enhanced atomic layer deposition (PEALD) or thermal ALD. 1C, the first liner material layer 108 is etched back to form the first liner layer 108a. The etch-back process is, for example, a dry etching process. 1D, a second liner material layer 110 is conformally formed in the first gap G1. The material of the second liner material layer 110 is, for example, titanium nitride, tungsten, titanium oxide, silicon nitride, silicon dioxide, silicon oxynitride, silicon carbonitride, amorphous silicon or polysilicon. The method for forming the second liner material layer 110 is, for example, an atomic layer deposition method, such as a plasma enhanced atomic layer deposition method or a heated atomic layer deposition method. 1E, the second liner material layer 110 is etched back to form the second liner layer 110a. The etch-back process is, for example, a dry etching process. Then, the steps in FIGS. 1B to 1C can be performed again to obtain the first liner structure LS1 filling the first gap G1 as shown in FIG. 1F, but the present invention is not limited to this.

In other embodiments, when the first gap G1 has a smaller width, the steps in FIGS. 1B to 1C may not be repeated, and the first liner 108a and the second liner 110a are filled with two first liner layers 108a and one second liner layer 110a. A gap G1, that is, the first liner structure LS1 may only include two first liner layers 108a and one second liner layer 110a. In other embodiments, when the first gap G1 has a larger width, the steps of FIGS. 1B to 1E can be repeated to alternately form a plurality of first liner layers 108a and a plurality of second liner layers in sequence. 110a to fill the first gap G1, that is, the first liner structure LS1 may include a plurality of first liner layers 108a and a plurality of second liner layers 110a. In other words, the number of the first liner layer 108a and the number of the second liner layer 110a in the first liner structure LS1 are not limited to those in FIG. 1F, as long as the first liner structure LS1 includes a plurality of alternately arranged second liner layers. One liner 108a and at least one second liner 110a belong to the scope of the present invention.

In the above-mentioned manufacturing process of the first liner structure LS1, the same etch-back process may have different etching rates for the material of the material layer 102, the material of the sacrificial pattern 106, the material of the first liner 108a, and the material of the second liner 110a. Therefore, the first liner layer can be formed by a high etching selection ratio between the material of the material layer 102, the material of the sacrificial pattern 106, the material of the first liner layer 108a and the material of the second liner layer 110a by the etch-back process Structure LS1. In addition, the material of the material layer 102, the material of the sacrificial pattern 106, the material of the first liner layer 108a, and the material of the second liner layer 110a may not chemically react with each other to form the first liner structure LS1 with good quality.

1G, the plurality of sacrificial patterns 106 are removed to form a plurality of second gaps G2. The method of removing the sacrificial pattern 106 is, for example, an ashing method, a dry etching method, or a wet etching method. In this embodiment, the width W1 of the first gap G1 and the width W2 of the second gap G2 are the same as an example, but the present invention is not limited to this. In other embodiments, the width W1 of the first gap G1 and the width W2 of the second gap G2 may be different.

1H to 1L, a plurality of second liner structures LS2 are formed in a plurality of second gaps G2. 1L, each second liner structure LS2 includes a plurality of second liner layers 110a and at least one first liner layer 108a alternately arranged. The two second liner layers 110a in the second liner structure LS2 are respectively located on the sidewalls of two adjacent first liner structures LS1. The two second liner layers 110a in the second liner structure LS2 may be located at two opposite ends of the second liner structure LS2 and are adjacent to two adjacent first liner structures LS1. In addition, the first liner structure LS1 and the second liner structure LS2 form a first liner layer 108a and a second liner layer 110a that are alternately arranged. The method for forming the second liner structure LS2 may include alternately forming the second liner layer 110a and the first liner layer 108a in the second gap G2 to fill the second gap G2, for example, as follows.

1H, a second liner material layer 110 is conformally formed in the second gap G2. The material of the second liner material layer 110 is, for example, titanium nitride, tungsten, titanium oxide, silicon nitride, silicon dioxide, silicon oxynitride, silicon carbonitride, amorphous silicon or polysilicon. The method for forming the second liner material layer 110 is, for example, an atomic layer deposition method, such as a plasma enhanced atomic layer deposition method or a heated atomic layer deposition method. Referring to FIG. 1I, an etch-back process is performed on the second liner material layer 110 to form a second liner layer 110a. The etch-back process is, for example, a dry etching process. 1J, a first liner material layer 108 is conformally formed in the second gap G2. The material of the first liner material layer 108 is, for example, tungsten, titanium nitride, titanium oxide, silicon nitride, silicon dioxide, silicon oxynitride, silicon carbonitride, amorphous silicon or polysilicon. The formation method of the first liner material layer 108 is, for example, an atomic layer deposition method, such as a plasma enhanced atomic layer deposition method or a heated atomic layer deposition method. 1K, the first liner material layer 108 is etched back to form the first liner layer 108a. The etch-back process is, for example, a dry etching process. Then, the steps in FIG. 1H to FIG. 1I can be performed again to obtain the second liner structure LS2 filling the second gap G2 as shown in FIG. 1L, but the present invention is not limited to this.

In some other embodiments, when the second gap G2 has a smaller width, the steps of FIGS. 1H to 1I may not be repeated, and the second liner 110a and the first liner 108a are filled with two second liner layers 110a and one first liner layer 108a. The two gaps G2, that is, the second liner structure LS2 may only include two second liner layers 110a and one first liner layer 108a. In other embodiments, when the second gap G2 has a larger width, the steps of FIGS. 1H to 1K can be repeated to alternately form a plurality of second liner layers 110a and a plurality of first liner layers in sequence. 108a to fill the second gap G2, that is, the second liner structure LS2 may include a plurality of second liner layers 110a and a plurality of first liner layers 108a. In other words, the number of the second liner layer 110a and the number of the first liner layer 108a in the second liner structure LS2 are not limited to the number in FIG. 1L, as long as the second liner structure LS2 includes a plurality of alternately arranged second liner layers. The second liner 110a and the at least one first liner 108a belong to the scope of the present invention.

In the process of the second liner structure LS2 described above, the same etch-back process can have different etching rates for the material of the material layer 102, the material of the first liner 108a, and the material of the second liner 110a. The etching process has a high etching selection ratio between the material of the material layer 102, the material of the first liner layer 108a, and the material of the second liner layer 110a to form the second liner structure LS2. In addition, the material of the material layer 102, the material of the first liner layer 108a, and the material of the second liner layer 110a may not have a chemical reaction with each other, so as to form the second liner structure LS2 with good quality.

In this embodiment, the width of the first liner layer 108a and the width of the second liner layer 110a are the same as an example, but the present invention is not limited to this. In other embodiments, the width of the first liner 108a and the width of the second liner 110a may be different. In this embodiment, the widths of the plurality of first liner layers 108a may be the same, but the present invention is not limited to this. In other embodiments, the widths of the plurality of first liner layers 108a may be different. In this embodiment, the width of the plurality of second liner layers 110a may be the same, but the present invention is not limited to this. In other embodiments, the widths of the plurality of second liner layers 110a may be different. In addition, the top profile of the first liner structure LS1 and the top profile of the second liner structure LS2 are not limited to the shapes in FIG. 1L. The top profile of the first liner structure LS1 and the top profile of the second liner structure LS2 may be changed due to different etching process parameters.

1M, after forming the second liner structure LS2, the first liner 108a may be removed. The method for removing the first liner layer 108a is, for example, a wet etching method or a dry etching method.

Next, using the second liner layer 110a as a mask, the material layer 102 is patterned to form a plurality of target patterns 102a. The method of patterning the material layer 102 is, for example, a dry etching method.

1N, after the target pattern 102a is formed, the second liner 110a may be removed. The method for removing the second liner layer 110a is, for example, a wet etching method or a dry etching method.

Based on the above embodiment, in the above multiple patterning method, the first liner structure LS1 including the first liner 108a and the second liner 110a alternately arranged is first formed in the first gap G1, and then the first liner structure LS1 is formed in the second gap G1. A second liner structure LS2 including alternately arranged second liner layers 110a and first liner layers 108a is formed in G2. In this way, the widths of the first gap G1 and the second gap G2, the number and width of the first liner 108a and the second liner 110a formed in the first gap G1, and the width of the first liner 108a and the second liner 110a formed in the first gap G1 can be flexibly adjusted according to requirements. The number and width of the second liner layer 110a and the first liner layer 108a in the second gap G2 are the same. Therefore, when the material layer 102 is patterned by using the first liner layer 108a or the second liner layer 110a as a mask, the pattern design of the first liner layer 108a or the second liner layer 110a can be flexibly adjusted The number and width of the target patterns 102a make the manufacturing process more flexible.

2A to 2B are cross-sectional views of a patterning process according to another embodiment of the invention. 2A to 2B are cross-sectional views of the manufacturing process following the steps of FIG. 1L.

Referring to FIG. 2A, after the structure of FIG. 1L is formed, the second liner 110a may be removed. The method for removing the second liner layer 110a is, for example, a wet etching method or a dry etching method.

Next, using the first liner layer 108a as a mask, the material layer 102 is patterned to form a plurality of target patterns 102b. The method of patterning the material layer 102 is, for example, a dry etching method.

2B, after the target pattern 102a is formed, the first liner 108a may be removed. The method for removing the first liner layer 108a is, for example, a wet etching method or a dry etching method.

Based on the above embodiment, it can be seen that in the above multiple patterning method, the first liner layer 108a or the second liner layer 110a can be selected as the mask according to requirements, thereby further improving the process flexibility.

In the above embodiment, before removing the plurality of sacrificial patterns 106, the plurality of first liner structures LS1 can respectively fill the plurality of first gaps G1, but the present invention is not limited to this. In other embodiments, after the plurality of sacrificial patterns 106 are removed, the plurality of first liner structures LS1 respectively fill the plurality of first gaps G1, as illustrated below.

3A to 3C are cross-sectional views of a patterning process according to another embodiment of the invention. 3A to 3C are cross-sectional views of the manufacturing process following the steps of FIG. 1A.

Referring to FIG. 3A, after the sacrificial layer 104 in FIG. 1A is formed, a first liner layer 108a and a second liner layer 110a may be alternately formed in the first gap G1, but the first liner layer 108a and the second liner layer 110a does not fill the first gap G1. The width of the first gap G1 in FIG. 3A may be greater than the width of the first gap G1 in FIG. 1A. The method of alternately forming the first liner layer 108a and the second liner layer 110a in sequence can refer to the content of the above-mentioned embodiment, which will not be described here. In addition, the same components in FIG. 3A and FIG. 1A are denoted by the same symbols and their description is omitted.

Referring to FIG. 3B, the plurality of sacrificial patterns 106 are removed to form a plurality of second gaps G2. The method for removing the sacrificial pattern 106 is, for example, an ashing method, a dry etching method, or a wet etching method. In this embodiment, the width W1 of the first gap G1 may be greater than the width W2 of the second gap G2, but the invention is not limited to this. In other embodiments, the width W1 of the first gap G1 may be smaller than the width W2 of the second gap G2. In other embodiments, the width W1 of the first gap G1 and the width W2 of the second gap G2 may be the same.

Referring to FIG. 3C, the second liner layer 110a and the first liner layer 108a may be alternately formed in the second gap G2 to form a second liner structure LS2 filling the second gap G2. In addition, in the process of forming the second liner structure LS2, the first liner structure LS1 filling the first gap G1 may be formed. In addition, the first liner structure LS1 and the second liner structure LS2 form a first liner layer 108a and a second liner layer 110a that are alternately arranged. The method for alternately forming the second liner layer 110a and the first liner layer 108a in sequence can refer to the content of the above-mentioned embodiment, which will not be described here.

Based on the above embodiment, it can be seen that in the above multiple patterning method, before or after removing the sacrificial pattern 106, the first liner structure LS1 that fills the first gap G1 can be formed according to requirements, thereby further improving the manufacturing process. elasticity.

In summary, in the multiple patterning method of the above embodiment, the width of the first gap and the second gap, the number of the first liner layer and the second liner layer formed in the first gap can be flexibly adjusted according to requirements And width, and the number and width of the second liner layer and the first liner layer formed in the second gap. Therefore, when using the first liner or the second liner as a mask to pattern the material layer, the number and number of target patterns can be flexibly adjusted by designing the pattern of the first liner or the second liner. Width, which makes the process more flexible. In addition, the first lining layer or the second lining layer can be selected as the mask according to requirements, thereby further improving the flexibility of the manufacturing process.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be subject to those defined by the attached patent application scope.

100: base 102: Material layer 102a, 102b: target pattern 104: Sacrifice Layer 106: Sacrifice Pattern 108: The first lining material layer 108a: the first liner 110: The second lining material layer 110a: second liner G1: first gap G2: second gap LS1: The first liner structure LS2: The second liner structure W1, W2: width

1A to 1N are cross-sectional views of a patterning process according to an embodiment of the invention. 2A to 2B are cross-sectional views of a patterning process according to another embodiment of the invention. 3A to 3C are cross-sectional views of a patterning process according to another embodiment of the invention.

100: base

102: Material layer

108a: the first liner

110a: second liner

G1: first gap

G2: second gap

LS1: The first liner structure

Claims (19)

A multiple patterning method, including: Provide material layer; Forming a sacrificial layer on the material layer, wherein the sacrificial layer includes a plurality of sacrificial patterns and a plurality of first gaps alternately arranged; A plurality of first liner structures are formed in the plurality of first gaps, and each of the first liner structures includes a plurality of first liner layers and at least one second liner layer alternately arranged, wherein the first liner The two first liner layers in the layer structure are respectively located on the sidewalls of two adjacent sacrificial patterns; Removing a plurality of the sacrificial patterns to form a plurality of second gaps; and A plurality of second liner structures are formed in the plurality of second gaps, and each of the second liner structures includes a plurality of the second liner layers and at least one of the first liner layers arranged alternately, wherein The two second lining layers in the second lining layer structure are respectively located on the sidewalls of two adjacent first lining layer structures, and are composed of a plurality of the first lining layer structures and a plurality of the first lining layer structures. The structure of the two lining layers forms a plurality of the first lining layers and a plurality of the second lining layers alternately arranged. The multiple patterning method according to claim 1, wherein the forming method of the first liner structure includes: The first liner layer and the second liner layer are alternately formed in the first gap in order to fill the first gap. The multiple patterning method according to claim 1, wherein the method of forming the first liner layer and the second liner layer in the first gap includes: Forming a first liner material layer conformally in the first gap; Performing an etch-back process on the first liner material layer to form the first liner layer; Forming a second liner material layer conformally in the first gap; and An etch-back process is performed on the second liner material layer to form the second liner layer. The multiple patterning method according to claim 1, wherein the method for forming the second liner structure includes: The second liner layer and the first liner layer are alternately formed in the second gap in order to fill the second gap. The multiple patterning method according to claim 1, wherein the method of forming the second liner layer and the first liner layer in the second gap includes: Forming a second liner material layer conformally in the second gap; Performing an etch-back process on the second liner material layer to form the second liner layer; Forming a first liner material layer conformally in the second gap; and An etch-back process is performed on the first liner material layer to form the first liner layer. The multiple patterning method according to claim 1, wherein the material of the material layer, the material of the sacrificial pattern, the material of the first liner layer and the material of the second liner layer are affected by the same etch-back process. With different etching rates. The multiple patterning method according to claim 1, wherein no chemical reaction occurs between the material of the material layer, the material of the sacrificial pattern, the material of the first liner and the material of the second liner . The multiple patterning method according to claim 1, wherein before removing a plurality of the sacrificial patterns, a plurality of the first liner structures respectively fill a plurality of the first gaps. The multiple patterning method according to claim 1, wherein after removing the plurality of sacrificial patterns, the plurality of first liner structures respectively fill the plurality of first gaps. The multiple patterning method as described in claim 1, further including: After forming a plurality of the second lining layer structures, removing a plurality of the first lining layers; and A plurality of the second liner layers are used as a mask, and the material layer is patterned to form a plurality of target patterns. The multiple patterning method as described in claim 1, further including: After forming a plurality of the second lining layer structures, removing a plurality of the second lining layers; and A plurality of the first liner layers are used as a mask, and the material layer is patterned to form a plurality of target patterns. The multiple patterning method according to claim 1, wherein the width of the first gap is the same as the width of the second gap. The multiple patterning method according to claim 1, wherein the width of the first gap is different from the width of the second gap. The multiple patterning method according to claim 1, wherein the width of the first underlayer is the same as the width of the second underlayer. The multiple patterning method according to claim 1, wherein the width of the first liner is different from the width of the second liner. The multiple patterning method according to claim 1, wherein a plurality of the first liner layers have the same width. The multiple patterning method according to claim 1, wherein a plurality of the first liner layers have different widths. The multiple patterning method according to claim 1, wherein a plurality of the second liner layers have the same width. The multiple patterning method according to claim 1, wherein the widths of the plurality of second underlayers are different.

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