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TWI729167B - 基板加熱裝置、基板加熱方法以及紅外線加熱器 - Google Patents

基板加熱裝置、基板加熱方法以及紅外線加熱器 Download PDF

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Publication number
TWI729167B
TWI729167B TW106123574A TW106123574A TWI729167B TW I729167 B TWI729167 B TW I729167B TW 106123574 A TW106123574 A TW 106123574A TW 106123574 A TW106123574 A TW 106123574A TW I729167 B TWI729167 B TW I729167B
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TW
Taiwan
Prior art keywords
substrate
infrared heater
heating
infrared
cover
Prior art date
Application number
TW106123574A
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English (en)
Chinese (zh)
Other versions
TW201807756A (zh
Inventor
加藤茂
佐保田勉
山谷謙一
升芳明
Original Assignee
日商東京應化工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 日商東京應化工業股份有限公司 filed Critical 日商東京應化工業股份有限公司
Publication of TW201807756A publication Critical patent/TW201807756A/zh
Application granted granted Critical
Publication of TWI729167B publication Critical patent/TWI729167B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Drying Of Solid Materials (AREA)
  • Furnace Details (AREA)
TW106123574A 2016-08-30 2017-07-14 基板加熱裝置、基板加熱方法以及紅外線加熱器 TWI729167B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016167793A JP6757629B2 (ja) 2016-08-30 2016-08-30 基板加熱装置、基板加熱方法及び赤外線ヒータ
JP2016-167793 2016-08-30

Publications (2)

Publication Number Publication Date
TW201807756A TW201807756A (zh) 2018-03-01
TWI729167B true TWI729167B (zh) 2021-06-01

Family

ID=61437446

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106123574A TWI729167B (zh) 2016-08-30 2017-07-14 基板加熱裝置、基板加熱方法以及紅外線加熱器
TW110100792A TWI762146B (zh) 2016-08-30 2017-07-14 基板加熱裝置、基板加熱方法以及紅外線加熱器

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW110100792A TWI762146B (zh) 2016-08-30 2017-07-14 基板加熱裝置、基板加熱方法以及紅外線加熱器

Country Status (4)

Country Link
JP (1) JP6757629B2 (ko)
KR (3) KR102336748B1 (ko)
CN (1) CN107785240B (ko)
TW (2) TWI729167B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111383944A (zh) * 2018-12-29 2020-07-07 东京应化工业株式会社 基板加热装置、基板处理系统以及基板加热方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3060633U (ja) * 1998-12-28 1999-09-07 アイリスオーヤマ株式会社 組立式チェスト
US7241633B2 (en) * 2003-06-16 2007-07-10 Tokyo Electron Limited Heat treatment apparatus and heat treatment method
CN101962759A (zh) * 2009-07-21 2011-02-02 深圳市宇光高科新能源技术有限公司 一种带有内加热器的pecvd系统

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3060663B2 (ja) * 1991-11-15 2000-07-10 井関農機株式会社 トラクタの伝動ケース接続構造
JP3060663U (ja) * 1998-12-29 1999-09-07 クリーン・テクノロジー株式会社 加熱装置
EP1229510B1 (en) * 1999-12-27 2012-04-25 Toshiba Mobile Display Co., Ltd Liquid crystal display apparatus and method for driving the same by performing a transition from an initial state to a display state
JP2001210632A (ja) 2000-01-28 2001-08-03 Sharp Corp ポリイミド膜の形成方法
JP3798674B2 (ja) * 2001-10-29 2006-07-19 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP4380236B2 (ja) * 2003-06-23 2009-12-09 東京エレクトロン株式会社 載置台及び熱処理装置
JP2006170524A (ja) 2004-12-15 2006-06-29 Tdk Corp 焼成炉
US8573836B2 (en) * 2006-10-26 2013-11-05 Tokyo Electron Limited Apparatus and method for evaluating a substrate mounting device
CN102089858B (zh) 2008-02-20 2013-03-13 夏普株式会社 柔性半导体基板的制造方法
JP5428811B2 (ja) * 2009-12-04 2014-02-26 凸版印刷株式会社 基板乾燥方法、基板乾燥装置、基板の製造方法、及びフラットパネルディスプレイ
JP2012250230A (ja) * 2011-06-02 2012-12-20 Tokyo Ohka Kogyo Co Ltd 加熱装置、塗布装置及び加熱方法
JP5622701B2 (ja) * 2011-10-13 2014-11-12 東京エレクトロン株式会社 減圧乾燥装置
JP2015133444A (ja) * 2014-01-15 2015-07-23 株式会社東芝 半導体製造装置および半導体装置の製造方法
JP2015141965A (ja) * 2014-01-28 2015-08-03 東京応化工業株式会社 回収装置及び基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3060633U (ja) * 1998-12-28 1999-09-07 アイリスオーヤマ株式会社 組立式チェスト
US7241633B2 (en) * 2003-06-16 2007-07-10 Tokyo Electron Limited Heat treatment apparatus and heat treatment method
CN101962759A (zh) * 2009-07-21 2011-02-02 深圳市宇光高科新能源技术有限公司 一种带有内加热器的pecvd系统

Also Published As

Publication number Publication date
JP6757629B2 (ja) 2020-09-23
CN107785240A (zh) 2018-03-09
TW201807756A (zh) 2018-03-01
KR20210100054A (ko) 2021-08-13
CN107785240B (zh) 2023-06-20
TW202129767A (zh) 2021-08-01
KR20180025177A (ko) 2018-03-08
JP2018037191A (ja) 2018-03-08
KR102336748B1 (ko) 2021-12-07
TWI762146B (zh) 2022-04-21
KR20220109367A (ko) 2022-08-04

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