TWI707746B - Abrasive material - Google Patents
Abrasive material Download PDFInfo
- Publication number
- TWI707746B TWI707746B TW106100221A TW106100221A TWI707746B TW I707746 B TWI707746 B TW I707746B TW 106100221 A TW106100221 A TW 106100221A TW 106100221 A TW106100221 A TW 106100221A TW I707746 B TWI707746 B TW I707746B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- area
- abrasive
- layer
- substrate
- Prior art date
Links
- 239000003082 abrasive agent Substances 0.000 title claims abstract description 32
- 238000005498 polishing Methods 0.000 claims abstract description 364
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000006061 abrasive grain Substances 0.000 claims abstract description 59
- 239000011230 binding agent Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 81
- 239000000853 adhesive Substances 0.000 claims description 36
- 230000001070 adhesive effect Effects 0.000 claims description 36
- 239000000945 filler Substances 0.000 claims description 32
- 229910003460 diamond Inorganic materials 0.000 claims description 14
- 239000010432 diamond Substances 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 104
- 239000002245 particle Substances 0.000 description 31
- 239000012790 adhesive layer Substances 0.000 description 23
- 238000000227 grinding Methods 0.000 description 18
- 230000007423 decrease Effects 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 230000001965 increasing effect Effects 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 238000007639 printing Methods 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000012423 maintenance Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- -1 polyethylene terephthalate Polymers 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241000531908 Aramides Species 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004823 Reactive adhesive Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/04—Zonally-graded surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
本發明在於提供一種研磨效率不易降低、且研磨成本相對較低的研磨材。研磨材具備基材、及積層於基材的表面側且含有研磨粒及其黏合劑的研磨層,並且研磨層於表面具備藉由槽所劃分的多個研磨部,且沿著研磨方向具有多個研磨部的佔有面積率不同的多種區域,沿著研磨方向而鄰接的一對區域的多個研磨部的佔有面積率之差為3%以上且21%以下。各區域可具有可包含在俯視下直徑為5 cm的圓的大小。沿著研磨方向而鄰接的一對區域中,一個區域中的多個研磨部的佔有面積率較佳為4.5%以上且9%以下,另一區域中的多個研磨部的佔有面積率較佳為9%以上且16%以下。The present invention is to provide an abrasive material whose polishing efficiency is not easily reduced and the polishing cost is relatively low. The abrasive includes a substrate and a polishing layer that is laminated on the surface of the substrate and contains abrasive grains and a binder. The polishing layer has a plurality of polishing portions divided by grooves on the surface, and has multiple polishing portions along the polishing direction. In the multiple types of regions with different occupied area ratios of the polishing portions, the difference in the occupied area ratios of the plurality of polishing portions in a pair of regions adjacent to each other along the polishing direction is 3% or more and 21% or less. Each area may have a size that can include a circle with a diameter of 5 cm when viewed from above. Among a pair of regions adjacent to each other along the polishing direction, the occupied area ratio of the plurality of polishing portions in one region is preferably 4.5% or more and 9% or less, and the occupied area ratio of the plurality of polishing portions in the other region is more preferable It is 9% or more and 16% or less.
Description
本發明是有關於一種研磨材。 The present invention relates to an abrasive material.
近年來,硬碟(hard disk)等電子設備的精密化進步。作為此種電子設備的基板材料,考慮到可應對小型化或薄型化的剛性、耐衝擊性及耐熱性,大多使用玻璃。該玻璃基板為脆性材料,因表面的損傷而機械強度明顯受損。因此,關於此種基板的研磨,要求研磨速率並且損傷少的平坦化精度。 In recent years, electronic devices such as hard disks have become more sophisticated. As a substrate material for such electronic devices, in consideration of rigidity, impact resistance, and heat resistance that can cope with miniaturization or thinning, glass is often used. The glass substrate is a brittle material, and its mechanical strength is obviously damaged due to surface damage. Therefore, the polishing of such a substrate requires a polishing rate and flattening accuracy with less damage.
通常若欲提高精加工的平坦化精度,則存在加工時間延長的傾向,研磨速率與平坦化精度處於取捨(trade-off)的關係。因此,難以兼具研磨速率與平坦化精度。相對於此,提出有為了兼具研磨速率與平坦化精度而具有分散有研磨粒及填充劑的研磨部的研磨材(參照日本專利特表2002-542057號公報)。 Generally, if it is desired to increase the flattening accuracy of finishing machining, the processing time tends to be prolonged, and the polishing rate and flattening accuracy are in a trade-off relationship. Therefore, it is difficult to achieve both polishing rate and flattening accuracy. In contrast to this, there has been proposed an abrasive having a polishing portion in which abrasive grains and fillers are dispersed in order to have both polishing rate and flattening accuracy (see Japanese Patent Application Publication No. 2002-542057).
然而,此種先前的研磨材若實施一定時間的研磨,則因研磨粒的鈍化或研磨層表面的堵塞而研磨速率降低。為了使該已降低的研磨速率重現,必須進行將研磨材的表面磨去而於表面出現新的面的所謂修整(dress)。於該修整前後亦需要研磨材的清掃,該修整為需要時間的操作。修整期間,作為被研磨體的玻璃基板的研磨被中斷,故對於先前的研磨材而言,由進行修整所致的研磨效率的降低大。 However, if such a conventional polishing material is polished for a certain period of time, the polishing rate decreases due to passivation of abrasive grains or clogging of the surface of the polishing layer. In order to reproduce the reduced polishing rate, it is necessary to perform a so-called dress in which the surface of the abrasive material is polished off and a new surface appears on the surface. Before and after the dressing, the polishing material is also required to be cleaned, and the dressing is an operation that takes time. During the dressing, the polishing of the glass substrate as the object to be polished is interrupted. Therefore, the previous polishing material has a large reduction in polishing efficiency due to the dressing.
另外,近年來於發光二極體(Light Emitting Diode,LED)或功率元件(power device)用方面,對於藍寶石或碳化矽等具有硬脆性且化學穩定性而難以加工的基板的需要不斷增加。對於此種難加工基板,相較於已確立的矽基板的研磨而需要效率更高的研磨方法。進而,此種基板由於化學穩定,故於研磨的最終步驟中進行的化學機械研磨(Chemical Mechanical Polishing,CMP)的加工中需要時間。因此,需要於作為其前步驟的研磨中儘可能減少基板表面的粗糙度或損傷,縮短CMP的加工時間。因此,於CMP的前步驟的研磨中需要高的研磨精度。 In addition, in recent years, for light-emitting diodes (LEDs) or power devices, there is an increasing demand for hard and brittle, chemically stable substrates such as sapphire or silicon carbide. For such difficult-to-process substrates, a more efficient polishing method is required compared to the established polishing of silicon substrates. Furthermore, since such a substrate is chemically stable, it takes time for chemical mechanical polishing (CMP) processing in the final step of polishing. Therefore, it is necessary to reduce the roughness or damage of the substrate surface as much as possible in the polishing as the previous step, and shorten the processing time of CMP. Therefore, high polishing accuracy is required for polishing in the previous step of CMP.
關於對該難加工基板進行研磨的方法,例如已提出有使用金剛石漿料及研磨材的游離研磨粒研磨(參照日本專利特開2014-100766號公報)、或使游離研磨粒保持於研磨材表面的孔中而進行研磨的半固定研磨粒研磨(參照日本專利特開2002-86350號公報)。 Regarding the method of polishing the difficult-to-process substrate, for example, free abrasive grain polishing using diamond slurry and abrasive material has been proposed (refer to Japanese Patent Laid-Open No. 2014-100766), or keeping free abrasive grains on the surface of the abrasive material. The semi-fixed abrasive grain is polished in the hole of the hole (refer to Japanese Patent Laid-Open No. 2002-86350).
該先前的游離研磨粒研磨及半固定研磨粒研磨藉由將金剛石用於研磨粒而實現效率高的研磨。然而,該先前的游離研磨粒研磨及半固定研磨粒研磨必須將研磨粒不斷地供給於研磨材,研磨成本高。 The conventional free abrasive grain polishing and semi-fixed abrasive grain polishing realize efficient polishing by using diamond for the abrasive grains. However, in the prior free abrasive grain polishing and semi-fixed abrasive grain polishing, the abrasive grains must be continuously supplied to the abrasive, and the polishing cost is high.
[專利文獻1]日本專利特表2002-542057號公報 [Patent Document 1] Japanese Patent Publication No. 2002-542057
[專利文獻2]日本專利特開2014-100766號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2014-100766
[專利文獻3]日本專利特開2002-86350號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2002-86350
本發明是鑒於此種不良狀況而成,其目的在於提供一種具有高研磨精度並且研磨效率不易降低、且研磨成本相對較低的研磨材。 The present invention is made in view of such disadvantages, and its object is to provide a polishing material with high polishing accuracy, low polishing efficiency, and relatively low polishing cost.
為了解決所述課題而成的發明是一種研磨材,其具備基材、及積層於該基材的表面側且含有研磨粒及其黏合劑的研磨層,並且所述研磨材的特徵在於:所述研磨層於其表面具備藉由槽所劃分的多個研磨部,且沿著研磨方向具有所述多個研磨部的佔有面積率不同的多種區域,沿著研磨方向而鄰接的一對所述區域的多個研磨部的佔有面積率之差為3%以上且21%以下。 The invention made in order to solve the above-mentioned problems is an abrasive including a substrate and an abrasive layer laminated on the surface side of the substrate and containing abrasive grains and a binder, and the abrasive is characterized by: The polishing layer is provided with a plurality of polishing portions divided by grooves on the surface thereof, and has a plurality of types of regions with different occupation area ratios of the plurality of polishing portions along the polishing direction, and a pair of adjacent ones along the polishing direction The difference in the occupied area ratio of the plurality of polishing parts in the region is 3% or more and 21% or less.
對於該研磨材而言,沿著研磨方向而鄰接的一對所述區域的多個研磨部的佔有面積率之差為所述範圍內。因此,該研磨材中,佔有面積率小的區域於研磨中所受的研磨壓力適度大。因該研磨壓力差而佔有面積率小的區域先磨損,故該研磨材於鄰接的區域間產生適度的階差。因此,於研磨時一面使被研磨體自高度小的區域向高度大的區域移動、或向其相反方向移動,一面進行研磨。因於該區域間移動時的跨越阻力而該研磨材的抓握(grip)力增大,且於高度大、即佔有面積率大的區域中面壓進一步提高。藉此,該研磨材可更有效地應用研磨時的面壓,故具有高的研磨 速率及平坦化精度,且因抓握力而於相對較長的期間內研磨速率不易降低。因此,該研磨材無需頻繁修整,故可實現運轉(running)成本的降低或步驟管理的簡化,且研磨精度及研磨效率優異。進而,無須於研磨時新供給研磨粒,故使用該研磨材的研磨與使用游離研磨粒的研磨相比,研磨成本更低。 For this polishing material, the difference in the occupied area ratio of the plurality of polishing portions of a pair of the regions adjacent to the polishing direction is within the above range. Therefore, in the polishing material, the area with a small occupied area is subjected to a moderately large polishing pressure during polishing. Due to the difference in the polishing pressure, the area with a small occupied area is worn first, so the polishing material produces a moderate step difference between adjacent areas. Therefore, during polishing, polishing is performed while moving the object to be polished from a region with a small height to a region with a large height, or in the opposite direction. The grip force of the abrasive material increases due to the spanning resistance when moving between the regions, and the surface pressure is further increased in the regions where the height is large, that is, the occupied area ratio is large. Thereby, the polishing material can more effectively apply the surface pressure during polishing, so it has high polishing Speed and flattening accuracy, and the grinding rate is not easy to decrease in a relatively long period of time due to the gripping force. Therefore, the polishing material does not need to be frequently trimmed, so that the running cost can be reduced or the step management can be simplified, and the polishing accuracy and polishing efficiency are excellent. Furthermore, there is no need to newly supply abrasive grains during polishing, so polishing using this abrasive material has lower polishing costs than polishing using free abrasive grains.
所述各區域可具有可包含在俯視下直徑為5cm的圓的大小。藉由如此般將所述各區域設為可包含在俯視下直徑為5cm的圓的大小,而更可靠地獲得由跨越阻力所得的抓握力增大效果。 Each of the regions may have a size that may include a circle with a diameter of 5 cm in a plan view. In this way, by setting the respective regions to a size that can include a circle with a diameter of 5 cm in a plan view, the gripping force increase effect due to the span resistance can be obtained more reliably.
沿著研磨方向而鄰接的一對區域中,一個區域中的多個研磨部的佔有面積率較佳為4.5%以上且9%以下。另外,另一區域中的多個研磨部的佔有面積率較佳為9%以上且16%以下。藉由如此般將沿著研磨方向而鄰接的一對區域的佔有面積率設為所述範圍內,可使研磨層難以磨損,並且可於鄰接的區域間產生適度的階差。因此,維持研磨層的耐久性,並且更可靠地獲得由跨越阻力所得的抓握力增大效果。 In a pair of regions adjacent to each other in the polishing direction, the occupied area ratio of the plurality of polishing portions in one region is preferably 4.5% or more and 9% or less. In addition, the occupied area ratio of the plurality of polishing portions in the other region is preferably 9% or more and 16% or less. By setting the occupied area ratio of the pair of regions adjacent to each other in the polishing direction within the above-mentioned range, the polishing layer can be hardly worn, and a moderate step difference can be generated between the adjacent regions. Therefore, the durability of the polishing layer is maintained, and the gripping force increase effect due to the span resistance can be obtained more reliably.
所述研磨粒可為金剛石研磨粒。藉由如此般將所述研磨粒設為金剛石研磨粒,可提高研磨力,故可更有效地應用研磨時的面壓,並且更可靠地獲得由跨越阻力所得的抓握力增大效果。 The abrasive particles may be diamond abrasive particles. By setting the abrasive grains as diamond abrasive grains in this way, the polishing force can be increased, so the surface pressure during polishing can be applied more effectively, and the gripping force increase effect due to the span resistance can be obtained more reliably.
所述黏合劑的主成分可為無機物。藉由如此般將所述黏合劑的主成分設為無機物,可提高研磨粒的保持力,抑制研磨粒的脫落。因此,研磨速率更不易降低。 The main component of the adhesive may be an inorganic substance. By setting the main component of the binder as an inorganic substance in this way, the retention of abrasive grains can be improved, and the abrasive grains can be prevented from falling off. Therefore, the polishing rate is less likely to decrease.
所述黏合劑可含有以氧化物作為主成分的填充劑。藉由 如此般使所述黏合劑中含有以氧化物作為主成分的填充劑,可提高所述黏合劑的彈性係數,故容易控制研磨層的磨損。因此,於研磨時於該研磨材的鄰接的區域間容易產生適度的階差,故更可靠地獲得由跨越阻力所得的抓握力增大效果。 The adhesive may contain a filler mainly composed of oxides. By In this way, the filler containing oxides as the main component in the adhesive can increase the elastic coefficient of the adhesive, so it is easy to control the wear of the abrasive layer. Therefore, a moderate step difference is likely to occur between adjacent regions of the polishing material during polishing, so that the effect of increasing the gripping force by the span resistance can be obtained more reliably.
因此,該研磨材可較佳地用於以玻璃基板為代表的基板的平面研磨。 Therefore, the polishing material can be preferably used for flat polishing of substrates typified by glass substrates.
此處所謂研磨層所具有的「區域」,是指各研磨部的面積的偏差及槽的寬度的偏差成為3%以內的區域。再者,所謂「槽的寬度」是指鄰接的一對研磨部之間的最短距離。 Here, the "area" of the polishing layer refers to the area where the deviation of the area of each polishing portion and the deviation of the groove width are within 3%. In addition, the "width of the groove" refers to the shortest distance between a pair of adjacent polishing portions.
另外,所謂「主成分」,是指含量最多的成分,例如是指含量為50質量%以上的成分。 In addition, the term "main component" refers to a component with the largest content, for example, a component with a content of 50% by mass or more.
如以上所說明,本發明的研磨材的研磨精度優異並且研磨效率不易降低,且研磨成本低。因此,該研磨材可較佳地用於電子設備等中所用的玻璃基板、或者藍寶石或碳化矽等難加工基板的研磨。 As explained above, the polishing material of the present invention has excellent polishing accuracy, is not easy to decrease in polishing efficiency, and has low polishing cost. Therefore, the abrasive can be preferably used for the polishing of glass substrates used in electronic devices, or difficult-to-process substrates such as sapphire or silicon carbide.
1、2:研磨材 1, 2: Abrasive material
10、11:基材 10, 11: substrate
20:研磨層 20: Grinding layer
21:研磨粒 21: Abrasive grain
22:黏合劑 22: Adhesive
23:槽 23: Slot
24:研磨部 24: Grinding Department
30:接著層 30: Next layer
40:支持體 40: Support
41:支持體接著層 41: Adhesive layer of support
X1:第1區域 X1: Zone 1
X2:第2區域
X2:
X3:第3區域 X3: Zone 3
X4:第4區域 X4: Area 4
圖1A為表示本發明的實施形態的研磨材的示意性平面圖。 Fig. 1A is a schematic plan view showing an abrasive material according to an embodiment of the present invention.
圖1B為圖1A的研磨材的A-A線處的示意性剖面圖。 Fig. 1B is a schematic cross-sectional view taken along the line A-A of the abrasive material of Fig. 1A.
圖2為表示與圖1B不同的實施形態的研磨材的示意性剖面圖。 Fig. 2 is a schematic cross-sectional view showing an abrasive material of an embodiment different from Fig. 1B.
以下,一面適當參照圖式一面對本發明的第1實施形態加以詳述。 Hereinafter, the first embodiment of the present invention will be described in detail while appropriately referring to the drawings.
<研磨材> <Abrasive material>
圖1A及圖1B所示的該研磨材1為圓盤狀,主要具備基材10、及積層於該基材10的表面側的研磨層20。另外,該研磨材1具備積層於基材10的背面側的接著層30。對於該研磨材1而言,將其配設於公知的研磨裝置的研磨壓盤上,藉由研磨裝置使其與被研磨體接觸同時旋轉,由此進行研磨。即,該研磨材1的研磨方向為基材10的圓周方向。
The polishing material 1 shown in FIGS. 1A and 1B has a disc shape and mainly includes a
(基材) (Substrate)
所述基材10為用以支持研磨層20的板狀的構件。
The
所述基材10的材質並無特別限定,可列舉:聚對苯二甲酸乙二酯(Polyethylene terephthalate,PET)、聚丙烯(Polypropylene,PP)、聚乙烯(Polyethylene,PE)、聚醯亞胺(Polyimide,PI)、聚萘二甲酸乙二酯(Polyethylene naphthalate,PEN)、芳族聚醯胺(aramide)、鋁、銅等。其中,較佳為與研磨層20的接著性良好的鋁。另外,亦可對基材10的表面進行化學處理、電暈處理、底漆處理等提高接著性的處理。
The material of the
另外,基材10可具有可撓性或延展性。藉由如此般基材10具有可撓性或延展性,該研磨材1追隨於被研磨體的表面形
狀,研磨面與被研磨體的接觸面積增大,故研磨速率進一步提高。此種具有可撓性的基材10的材質例如可列舉PET或PI等。另外,具有延展性的基材10的材質可列舉鋁或銅等。
In addition, the
另外,所述基材10的大小並無特別限制,例如可設為外徑200mm以上且2022mm以下及內徑100mm以上且658mm以下。
In addition, the size of the
所述基材10的平均厚度並無特別限制,例如可設為75μm以上且1mm以下。於所述基材10的平均厚度小於所述下限的情形時,有該研磨材1的強度或平坦性不足之虞。另一方面,於所述基材10的平均厚度超過所述上限的情形時,有該研磨材1不需要地變厚而處理變困難之虞。
The average thickness of the
(研磨層) (Grinding layer)
研磨層20含有研磨粒21及其黏合劑22。另外,所述研磨層20於其表面具備藉由槽23所劃分的多個研磨部24。
The
另外,所述研磨層20沿著其研磨方向、即基材10的圓周方向而依序連續具有第1區域X1、第2區域X2、第3區域X3及第4區域X4這四個區域。
In addition, the
所述研磨層20的平均厚度(研磨部24的平均厚度)並無特別限制,較佳為25μm,更佳為30μm,進而佳為200μm。另一方面,所述研磨層20的平均厚度的上限較佳為4000μm,更佳為3000μm,進而佳為2500μm。於所述研磨層20的平均厚度小於所述下限的情形時,研磨層20的磨滅變快,故有該研磨材1
的耐久性不足之虞。另一方面,於所述研磨層20的平均厚度超過所述上限的情形時,有該研磨材1不需要地變厚而處理變困難之虞。
The average thickness of the polishing layer 20 (the average thickness of the polishing portion 24) is not particularly limited, and is preferably 25 μm, more preferably 30 μm, and even more preferably 200 μm. On the other hand, the upper limit of the average thickness of the
(研磨粒) (Abrasive grain)
所述研磨粒21可列舉金剛石、氧化鋁、二氧化矽等的粒子。其中,較佳為可獲得高研磨力的金剛石研磨粒。藉由如此般將所述研磨粒21設為金剛石研磨粒,可提高研磨力,故可更有效地應用研磨時的面壓,並且更可靠地獲得由跨越阻力所得的抓握力增大效果。
Examples of the
所述研磨粒21的平均粒徑的下限較佳為2μm,更佳為10μm。另外,所述研磨粒21的平均粒徑的上限較佳為50μm,更佳為45μm。於所述研磨粒21的平均粒徑小於所述下限的情形時,有研磨速率變得不充分之虞。另一方面,於所述研磨粒21的平均粒徑超過所述上限的情形時,有被研磨體受到損傷之虞。此處所謂「平均粒徑」,是指藉由雷射繞射法等所測定的體積基準的累計粒度分佈曲線的50%值(50%粒徑、D50)。
The lower limit of the average particle diameter of the
所述研磨粒21相對於研磨層20的含量的下限較佳為3vol%(體積百分比),更佳為5vol%。另外,所述研磨粒21相對於研磨層20的含量的上限較佳為55vol%,更佳為45vol%,進而佳為35vol%。於所述研磨粒21相對於研磨層20的含量小於所述下限的情形時,有研磨層20的研磨力不足之虞。另一方面,於所述研磨粒21相對於研磨層20的含量超過所述上限的情形時,有
研磨層20的研磨粒21的保持力不足之虞。
The lower limit of the content of the
(黏合劑) (Adhesive)
所述黏合劑22的主成分可列舉樹脂或無機物。所述樹脂例如可列舉:丙烯酸系樹脂、胺基甲酸酯樹脂、環氧樹脂、纖維素樹脂、乙烯系樹脂、苯氧基樹脂、酚樹脂、聚酯等。另外,所述無機物可列舉:矽酸鹽、磷酸鹽、多價金屬烷醇鹽等。 The main component of the adhesive 22 may be resin or inorganic substance. Examples of the resin include acrylic resins, urethane resins, epoxy resins, cellulose resins, vinyl resins, phenoxy resins, phenol resins, polyesters, and the like. In addition, examples of the inorganic substance include silicates, phosphates, and polyvalent metal alkoxides.
所述黏合劑22的主成分較佳為無機物。藉由如此般將所述黏合劑22的主成分設為無機物,可提高研磨層20的研磨粒21的保持力,抑制研磨粒21的脫落。因此,研磨速率更不易降低。無機物中,亦較佳為研磨層20的研磨粒21的保持力高的矽酸鹽。
The main component of the adhesive 22 is preferably an inorganic substance. By setting the main component of the
另外,於所述黏合劑22的主成分為無機物的情形時,所述黏合劑22可含有以氧化物作為主成分的填充劑。藉由如此般使所述黏合劑22中含有以氧化物作為主成分的填充劑,可增大所述黏合劑22的彈性係數,故容易控制研磨層20的磨損。因此,於研磨時於該研磨材1的鄰接的區域間容易產生適度的階差,故更可靠地獲得由跨越阻力所得的抓握力增大效果。
In addition, when the main component of the adhesive 22 is an inorganic substance, the adhesive 22 may contain a filler having an oxide as the main component. By making the adhesive 22 contain a filler mainly composed of oxides in this way, the coefficient of elasticity of the adhesive 22 can be increased, so that the wear of the
所述填充劑例如可列舉:氧化鋁、二氧化矽、氧化鈰、氧化鎂、氧化鋯、氧化鈦等氧化物及二氧化矽-氧化鋁、二氧化矽-氧化鋯、二氧化矽-氧化鎂等複合氧化物。該些填充劑可單獨使用或視需要組合使用兩種以上。其中,較佳為可獲得高研磨力的氧化鋁。 Examples of the filler include: alumina, silica, cerium oxide, magnesia, zirconia, titania and other oxides, and silica-alumina, silica-zirconia, silica-magnesia And other composite oxides. These fillers can be used alone or in combination of two or more as necessary. Among them, alumina capable of obtaining high grinding power is preferred.
所述填充劑的平均粒徑亦依存於研磨粒21的平均粒
徑,但所述填充劑的平均粒徑的下限較佳為0.01μm,更佳為2μm。另一方面,所述填充劑的平均粒徑的上限較佳為20μm,更佳為15μm。於所述填充劑的平均粒徑小於所述下限的情形時,有因由所述填充劑所得的黏合劑22的彈性係數增大效果不足而研磨層20的磨損的控制變得不充分之虞。另一方面,於所述填充劑的平均粒徑超過所述上限的情形時,有填充劑妨礙研磨粒21的研磨力之虞。
The average particle size of the filler also depends on the average particle size of the abrasive 21
However, the lower limit of the average particle diameter of the filler is preferably 0.01 μm, more preferably 2 μm. On the other hand, the upper limit of the average particle diameter of the filler is preferably 20 μm, more preferably 15 μm. When the average particle diameter of the filler is smaller than the lower limit, the effect of increasing the coefficient of elasticity of the adhesive 22 obtained from the filler may be insufficient, and the control of the wear of the
另外,所述填充劑的平均粒徑可小於研磨粒21的平均粒徑。所述填充劑的平均粒徑相對於研磨粒21的平均粒徑之比的下限較佳為0.1,更佳為0.2。另一方面,所述填充劑的平均粒徑相對於研磨粒21的平均粒徑之比的上限較佳為0.8,更佳為0.6。於所述填充劑的平均粒徑相對於研磨粒21的平均粒徑之比小於所述下限的情形時,有因由所述填充劑所得的黏合劑22的彈性係數增大效果不足而研磨層20的磨損的控制變得不充分之虞。反之,於所述填充劑的平均粒徑相對於研磨粒21的平均粒徑之比超過所述上限的情形時,有填充劑妨礙研磨粒21的研磨力之虞。
In addition, the average particle size of the filler may be smaller than the average particle size of the
所述填充劑相對於研磨層20的含量亦依存於研磨粒21的含量,但所述填充劑相對於研磨層20的含量的下限較佳為15vol%,更佳為30vol%。另一方面,所述填充劑相對於研磨層20的含量的上限較佳為75vol%,更佳為72vol%。於所述填充劑相對於研磨層20的含量小於所述下限的情形時,有因由所述填充劑所得的黏合劑22的彈性係數增大效果不足而研磨層20的磨損的
控制變得不充分之虞。反之,於所述填充劑相對於研磨層20的含量超過所述上限的情形時,有填充劑妨礙研磨粒21的研磨力之虞。
The content of the filler relative to the
所述黏合劑22中,亦可根據目的而適當含有分散劑、偶合劑、界面活性劑、潤滑劑、消泡劑、著色劑等各種助劑及添加劑等。另外,所述黏合劑22的樹脂亦可至少一部分交聯。
The
(槽) (groove)
所述槽23是於研磨層20的表面側以等間隔的格子狀而構成。另外,所述槽23的底面是由基材10的表面所構成。
The
各區域內的槽23的寬度為大致等寬。即,多個研磨部24於一個區域內於在俯視下為相同的正方形狀,是以大致等密度而配設。另外,關於所述槽23的寬度,後述第1區域X1及第3區域X3的槽23的寬度小於第2區域X2及第4區域X4。另外,第1區域X1的槽23的寬度與第3區域X3的槽23的寬度大致相同,第2區域X2的槽23的寬度與第4區域X4的槽23的寬度大致相同。
The width of the
另外,可於將鄰接的區域分割的邊界上配設有槽23。藉由如此般於邊界上配設槽23,因研磨而於區域間產生的階差隔著槽23而相對向,故槽23成為緩衝區域而可抑制被研磨體的邊緣缺損或破裂的產生。
In addition,
槽23的寬度及間隔是以鄰接的區域(第1區域X1及第2區域X2、第2區域X2及第3區域X3、第3區域X3及第4區域X4、以及第4區域X4及第1區域X1)的研磨部24的佔有面
積率之差成為既定範圍內的方式適當設定。
The width and interval of the
具體而言,所述槽23的寬度的下限較佳為0.3mm,更佳為0.5mm。另外,所述槽23的寬度的上限較佳為15mm,更佳為10mm。於所述槽23的寬度小於所述下限的情形時,有因研磨而產生的研磨粉堵塞槽23之虞。另一方面,於所述槽23的寬度超過所述上限的情形時,被研磨體容易落入至槽23中,故有於研磨時被研磨體產生損傷之虞。
Specifically, the lower limit of the width of the
槽23的間隔的下限較佳為2mm,更佳為3mm。另一方面,槽23的間隔的上限較佳為20mm,更佳為10mm。於槽23的間隔小於所述下限的情形時,為了將研磨部24的佔有面積率設為所需的範圍,必須減小研磨部24的面積,有研磨部24自基材10剝離之虞。反之,於槽23的間隔超過所述上限的情形時,為了將研磨部24的佔有面積率設為所需的範圍,必須增大槽23的寬度,有於研磨時被研磨體落入至槽23中,被研磨體產生損傷之虞。此處所謂「槽的間隔」,是指格子間隔、即構成縱向或橫向格子的平行的槽的間距。
The lower limit of the interval of the
各研磨部24的面積的下限較佳為0.5mm2,更佳為1mm2。另一方面,所述研磨部24的面積的上限較佳為13mm2,更佳為7mm2。於所述研磨部24的面積小於所述下限的情形時,研磨層20的磨損變快,故有該研磨材1的耐久性不足之虞。另外,有研磨部24自基材10剝離之虞。反之,於所述研磨部24的面積超過所述上限的情形時,有研磨層20難以磨損而難以產生適度的
階差之虞。因此,有於研磨時研磨部24對被研磨體的接觸面積變得過大,由摩擦阻力導致研磨速率降低之虞。
The lower limit of the area of each polishing
(研磨層的區域) (Area of polishing layer)
所述研磨層20具有藉由通過基材10表面的中心的正交的兩條直線分割而成的第1區域X1、第2區域X2、第3區域X3及第4區域X4。即,所述第1區域X1、第2區域X2、第3區域X3及第4區域X4是以大致等角度間隔配設。另外,由於如上述般構成槽,故第1區域X1及第3區域X3的佔有面積率大致相同,第2區域X2及第4區域X4的佔有面積率大致相同。另外,第1區域X1及第3區域X3的研磨部24的佔有面積率大於第2區域X2及第4區域X4的研磨部24的佔有面積率。因此,所述研磨層20以大致等角度間隔而交替具有研磨部24的佔有面積率不同的兩種區域。藉由如此般研磨層20以大致等角度間隔而交替具有研磨部24的佔有面積率不同的兩種區域,被研磨體於區域間週期性地移動,故可獲得更高的平坦化精度與抑制研磨速率降低的效果。
The
研磨部24的佔有面積率大的第1區域X1及第3區域X3的佔有面積率的下限較佳為9%,更佳為11%。另一方面,所述第1區域X1及第3區域X3的佔有面積率的上限較佳為16%,更佳為13%。於所述第1區域X1及第3區域X3的佔有面積率小於所述下限的情形時,為了將與佔有面積率小的第2區域X2及第4區域X4的佔有面積率之差設為既定範圍內,必須相對減小第2區域X2及第4區域X4的佔有面積率。因此,第2區域X2及第4
區域X4的研磨層20的磨損變快,故有該研磨材1的耐久性不足之虞。反之,於所述第1區域X1及第3區域X3的佔有面積率超過所述上限的情形時,於研磨時第1區域X1及第3區域X3難以磨損,與第2區域X2及第4區域X4之間的階差變大。由此跨越阻力變得過大,故有產生被研磨體的邊緣缺損或破裂之虞。
The lower limit of the occupied area ratio of the first region X1 and the third region X3 where the occupied area ratio of the polishing
研磨部24的佔有面積率小的第2區域X2及第4區域X4的佔有面積率的下限較佳為4.5%,更佳為6%。另一方面,所述第2區域X2及第4區域X4的佔有面積率的上限較佳為9%,更佳為8%。於所述第2區域X2及第4區域X4的佔有面積率小於所述下限的情形時,研磨層20的磨損變快,故有該研磨材1的耐久性不足之虞。反之,於所述第2區域X2及第4區域X4的佔有面積率超過所述上限的情形時,於研磨時第2區域X2及第4區域X4難以磨損,而有難以於第1區域X1及第3區域X3與第2區域X2及第4區域X4之間產生適度的階差之虞。因此,有容易產生研磨速率的降低之虞。
The lower limit of the occupied area ratio of the second region X2 and the fourth region X4 with a small occupied area ratio of the polishing
研磨部24的佔有面積率大的第1區域X1及第3區域X3的佔有面積率、與研磨部24的佔有面積率小的第2區域X2及第4區域X4的佔有面積率之差的下限為3%,更佳為4%。另一方面,所述佔有面積率之差的上限為21%,更佳為12%。於所述佔有面積率之差小於所述下限的情形時,有於研磨時難以於第1區域X1及第3區域X3、與第2區域X2及第4區域X4之間產生適度的階差之虞。因此,有容易產生研磨速率的降低之虞。反之,
於所述佔有面積率之差超過所述上限的情形時,於研磨時於第1區域X1及第3區域X3與第2區域X2及第4區域X4之間產生的階差變大。由此跨越阻力變得過大,故有產生被研磨體的邊緣缺損或破裂之虞。
The lower limit of the difference between the occupied area ratio of the first area X1 and the third area X3 where the area ratio of the polishing
各區域的面積是由區域的分割數及基材10的大小而決定,各區域的面積的下限較佳為2000mm2,更佳為3000mm2。另一方面,各區域的面積的上限較佳為20000mm2,更佳為15000mm2。於各區域的面積小於所述下限的情形時,於被研磨體的前邊緣於區域內移動時,被研磨體的後邊緣位於其他的鄰接區域中,跨越阻力變得不充分,故有抓握力增大效果不足之虞。反之,於各區域的面積超過所述上限的情形時,有於研磨時自被研磨體整體進入至同一區域中起至被研磨體的前邊緣於區域間移動為止的距離變長,由跨越阻力所得的抓握力增大效果變得不充分之虞。
The area of each region is determined by the number of divisions of the region and the size of the
另外,各區域的大小較佳為大於作為被研磨體的基板的大小,具體而言,所述各區域較佳為具有可包含在俯視下直徑為5cm的圓的大小。於各區域的大小為作為被研磨體的基板的大小以下的情形時,於被研磨體的前邊緣於區域內移動時,被研磨體的後邊緣位於其他的鄰接區域中,跨越阻力變得不充分,故有抓握力增大效果不足之虞。 In addition, the size of each area is preferably larger than the size of the substrate as the object to be polished. Specifically, each area preferably has a size that can include a circle with a diameter of 5 cm in a plan view. When the size of each area is less than or equal to the size of the substrate as the object to be polished, when the front edge of the object to be polished moves within the area, the rear edge of the object to be polished is located in other adjacent areas, and the crossover resistance is reduced. Sufficient, so there is a risk of insufficient grip increasing effect.
(接著層) (Next layer)
接著層30為將該研磨材1固定於用以支持該研磨材1並安裝於研磨裝置的支持體的層。
The
該接著層30中所用的接著劑並無特別限定,例如可列舉:反應型接著劑、瞬間接著劑、熱熔接著劑、黏著劑等。
The adhesive used in the
該接著層30中所用的接著劑較佳為黏著劑。藉由使用黏著劑作為接著層30中所用的接著劑,可自支持體剝離該研磨材1並重新貼,故容易再利用該研磨材1及支持體。此種黏著劑並無特別限定,例如可列舉:丙烯酸系黏著劑、丙烯酸-橡膠系黏著劑、天然橡膠系黏著劑、丁基橡膠系等合成橡膠系黏著劑、矽酮系黏著劑、聚胺基甲酸酯系黏著劑等。
The adhesive used in the
接著層30的平均厚度的下限較佳為0.05mm,更佳為0.1mm。另外,接著層30的平均厚度的上限較佳為0.3mm,更佳為0.2mm。於接著層30的平均厚度小於所述下限的情形時,有接著力不足,研磨材1自支持體剝離之虞。另一方面,於接著層30的平均厚度超過所述上限的情形時,有於將該研磨材1切割成所需形狀時造成障礙等而操作性降低之虞。
The lower limit of the average thickness of the
<平面基板的研磨> <Grinding of flat substrates>
該研磨材1可較佳地用於以玻璃基板為代表的平面基板的單面或雙面研磨。 The polishing material 1 can be preferably used for single-sided or double-sided polishing of flat substrates represented by glass substrates.
該研磨材1的第5次研磨時的研磨速率相對於第1次研磨的研磨速率之比例(研磨速率維持率)的下限較佳為60%,更佳為75%,進而佳為90%。於所述研磨速率維持率小於所述下限的情形時,有因研磨速率降低而研磨效率降低之虞。另一方面,所述研磨速率維持率的上限並無特別限定,越大越佳。此處所謂 研磨速率,是指對直徑5.08cm、比重3.97、c面的藍寶石基板於研磨壓力200g/cm2、上壓盤轉速-25rpm、下壓盤轉速50rpm及太陽齒輪(SUN gear)轉速8rpm的條件下反覆進行10分鐘研磨時的每1次的研磨速率。具體而言,研磨速率可藉由將研磨前後的藍寶石基板的重量變化(g)除以基板的表面積(μm2)、基板的比重(g/μm3)及研磨時間(分鐘)而算出。 The lower limit of the ratio of the polishing rate in the fifth polishing of the polishing material 1 to the polishing rate in the first polishing (polishing rate maintenance) is preferably 60%, more preferably 75%, and still more preferably 90%. In the case where the polishing rate maintenance ratio is less than the lower limit, the polishing efficiency may decrease due to the decrease in the polishing rate. On the other hand, the upper limit of the polishing rate maintenance ratio is not particularly limited, and the larger the better. The so-called polishing rate here refers to a sapphire substrate with a diameter of 5.08 cm, a specific gravity of 3.97, and a c-plane at a polishing pressure of 200 g/cm 2 , upper platen speed -25 rpm, lower platen speed 50 rpm, and sun gear speed 8 rpm The polishing rate per one shot when the polishing is repeated for 10 minutes under the conditions. Specifically, the polishing rate can be calculated by dividing the weight change (g) of the sapphire substrate before and after polishing by the surface area (μm 2 ) of the substrate, the specific gravity of the substrate (g/μm 3 ), and the polishing time (minutes).
該研磨材1的第1次研磨的研磨速率的下限較佳為10μm/min,更佳為12μm/min,進而佳為15μm/min。於所述研磨速率小於所述下限的情形時,有研磨效率降低之虞。另一方面,所述研磨速率的上限並無特別限定。 The lower limit of the polishing rate of the first polishing of the polishing material 1 is preferably 10 μm/min, more preferably 12 μm/min, and still more preferably 15 μm/min. When the polishing rate is less than the lower limit, the polishing efficiency may decrease. On the other hand, the upper limit of the polishing rate is not particularly limited.
<研磨材的製造方法> <Method of manufacturing abrasive materials>
該研磨材1可藉由準備研磨層用組成物的步驟、將研磨層用組成物印刷至基材10的表面側的步驟、及貼附接著層30的步驟而製造。
The polishing material 1 can be manufactured by a step of preparing a composition for a polishing layer, a step of printing the composition for a polishing layer on the surface side of the
(研磨層用組成物準備步驟) (Preparation steps of composition for polishing layer)
首先,於研磨層用組成物準備步驟中,以塗敷液的形式準備含有以無機物作為主成分的黏合劑22的形成材料、填充劑及研磨粒21的研磨層用組成物。另外,為了控制塗敷液的黏度或流動性,添加水、醇等稀釋劑等。
First, in the polishing layer composition preparation step, a polishing layer composition containing a forming material of a
繼而,於研磨層形成步驟中,使用所述研磨層用組成物準備步驟中所準備的塗敷液,於基材10的表面藉由印刷法而形成由經槽23所劃分的多個研磨部24所構成的研磨層20。該研磨層
20具有各為兩個的研磨部24的佔有面積率不同的兩種區域。具體而言,對於藉由通過基材10表面的中心的正交的兩條直線進行分割而成的4個區域,沿著研磨方向而交替地配設該兩種區域。另外,研磨層20的形成是藉由準備與該兩種區域相對應的遮罩,並介隔該遮罩印刷所述研磨層用組成物而進行。為了形成槽23,所述遮罩具有與各區域的槽23的形狀相對應的形狀。該印刷方式例如可使用網版印刷、金屬遮罩印刷等。
Then, in the polishing layer forming step, the coating liquid prepared in the polishing layer composition preparation step is used to form a plurality of polishing portions divided by
印刷後,使塗敷液加熱脫水及加熱硬化,由此形成研磨層20。具體而言,例如使塗敷液於室溫(25℃)下乾燥,於70℃以上且90℃以下的溫度下加熱脫水後,藉由140℃以上且310℃以下的熱以2小時以上且4小時以下的範圍進行硬化,由此形成黏合劑22。
After printing, the coating liquid is heated to dehydrate and heat to harden, thereby forming the
(接著層貼附步驟) (Next layer attaching step)
最後,可於接著層貼附步驟中,於所述基材10的背面貼附接著層30,獲得該研磨材1。
Finally, in the step of attaching the adhesive layer, the
<優點> <Advantages>
對於該研磨材1而言,沿著研磨方向而鄰接的一對所述區域的多個研磨部24的佔有面積率之差為所述範圍內。因此,該研磨材1中,佔有面積率小的區域於研磨中所受的研磨壓力適度大。因該研磨壓力差而佔有面積率小的區域先磨損,故該研磨材1於鄰接的區域間產生適度的階差。因此,於研磨時一面使被研磨體自高度小的區域向高度大的區域移動、或向相反方向移動,一面
進行研磨。因於該區域間移動時的跨越阻力而該研磨材1的抓握力增大,且高度大、即佔有面積率大的區域中面壓進一步提高。藉此,該研磨材1可更有效地應用研磨時的面壓,故具有高的研磨速率及平坦化精度,且因抓握力而於相對較長的期間內研磨速率不易降低。因此,該研磨材1無須頻繁進行修整,故可實現運轉成本的降低或步驟管理的簡化,且研磨精度及研磨效率優異。進而,無須於研磨時新供給研磨粒,故使用該研磨材1的研磨與使用游離研磨粒的研磨相比,研磨成本更低。
In this polishing material 1, the difference in the occupied area ratio of the plurality of polishing
以下,一面適當參照圖式一面對本發明的第2實施形態加以詳述。 Hereinafter, the second embodiment of the present invention will be described in detail while appropriately referring to the drawings.
圖2所示的該研磨材2為圓盤狀,主要具備基材11、及積層於該基材11的表面側的研磨層20。另外,該研磨材2具備積層於基材11的背面側的接著層30。進而,該研磨材2具備經由接著層30而積層的支持體40及積層於該支持體40的背面側的支持體接著層41。再者,關於與第1實施形態相同的構成要素,標註相同的符號而省略說明。
The polishing
(基材) (Substrate)
所述基材11為用以支持研磨層20的板狀的構件。基材11是沿著其研磨方向而被分斷成第1區域X1、第2區域X2、第3區域X3及第4區域X4。即,位於鄰接區域的邊界的槽的底面是由支持體40的表面所構成。藉由將基材11分斷成各區域,可藉由
分別貼合形成有研磨部24的佔有面積率不同的研磨層20的多個基材11而構成該研磨材2,故與於一個基材上形成研磨部24的佔有面積率不同的區域的情形相比,容易製造該研磨材2。
The
基材11的材質、大小及平均厚度可與第1實施形態的基材10相同。
The material, size, and average thickness of the
(支持體) (Support)
支持體40為用以支持基材11,另外將該研磨材2固定於研磨裝置的板狀的構件。
The
所述支持體40的材質可列舉:聚丙烯、聚乙烯、聚四氟乙烯、聚氯乙烯等具有熱塑性的樹脂或聚碳酸酯、聚醯胺、聚對苯二甲酸乙二酯等工程塑膠等。藉由在所述支持體40中使用此種材質,所述支持體40具有可撓性,該研磨材2追隨於被研磨體的表面形狀,研磨面與被研磨體容易接觸,故研磨效率提高。
The material of the
所述支持體40的平均厚度例如可設為0.5mm以上且3mm以下。於所述支持體40的平均厚度小於所述下限的情形時,有支持體40的強度不足之虞。另一方面,於所述支持體40的平均厚度超過所述上限的情形時,有難以將所述支持體40安裝於研磨裝置之虞或所述支持體40的可撓性不足之虞。
The average thickness of the
(支持體接著層) (Support Adhesion Layer)
支持體接著層41為用以將支持體40安裝於研磨裝置的層。
The
支持體接著層41的接著劑的種類及平均厚度可與接著層30相同。
The type and average thickness of the adhesive of the
<研磨材的製造方法> <Method of manufacturing abrasive materials>
該研磨材2可藉由準備研磨層用組成物的步驟、將研磨層用組成物印刷至基材11的表面側的步驟、將所述基材11固定於支持體40的步驟及貼附支持體接著層41的步驟而製造。
The polishing
(研磨層用組成物準備步驟) (Preparation steps of composition for polishing layer)
研磨層用組成物準備步驟與第1實施形態中的研磨層用組成物準備步驟相同,故省略說明。 The preparation step of the polishing layer composition is the same as the preparation step of the polishing layer composition in the first embodiment, so the description is omitted.
(印刷步驟) (Printing steps)
繼而,於印刷步驟中,使用所述研磨層用組成物準備步驟中準備的塗敷液,於基材11上印刷所述研磨層用組成物。
Then, in the printing step, the coating liquid prepared in the polishing layer composition preparation step is used to print the polishing layer composition on the
具體而言,分別準備兩片基材11以用於該研磨材2的研磨部24的佔有面積率不同的兩種區域。準備與該基材11相對應的遮罩,介隔該遮罩而印刷所述研磨層用組成物。再者,為了形成槽23,所述遮罩具有與各區域的槽23的形狀相對應的形狀。印刷方法可與第1實施形態相同。
Specifically, two
(基材貼附步驟) (Substrate attachment step)
繼而,於基材貼附步驟中,將形成有研磨層20的所述基材11以與該研磨材2的各區域的形狀一致的方式切斷,經由接著層30而分別接著於支持體40。
Then, in the substrate attaching step, the
(支持體接著層貼附步驟) (Steps to attach the support to the layer)
最後,可於支持體接著層貼附步驟中,於所述支持體40的背面貼附支持體接著層41,獲得該研磨材2。
Finally, in the support adhesive layer attaching step, the
<優點> <Advantages>
該研磨材2具備支持體40,由此該研磨材2的處理變容易。
The polishing
本發明不限定於所述實施形態,除了所述態樣以外,能以實施了各種變更、改良的態樣而實施。 The present invention is not limited to the above-mentioned embodiment, and can be implemented with various changes and improvements other than the above-mentioned aspects.
所述實施形態中,對研磨材為圓盤狀的情形進行了說明,但研磨材的形狀不限定於圓盤狀。例如研磨材可設為正方形狀。將研磨材設為正方形狀的情形的大小並無特別限定,例如可設為一邊為140mm以上且160mm以下的正方形狀。 In the above-mentioned embodiment, the case where the abrasive material is a disc shape has been described, but the shape of the abrasive material is not limited to the disc shape. For example, the abrasive may be square. The size of the case where the abrasive is a square shape is not particularly limited, and for example, it can be a square shape with a side of 140 mm or more and 160 mm or less.
所述實施形態中,將槽設為格子狀,即,將研磨部的平面形狀設為正方形狀,但研磨部的平面形狀亦可不為正方形狀,例如可為將四邊形以外的多邊形重覆的形狀、圓形狀等。 In the above-mentioned embodiment, the grooves are grid-shaped, that is, the planar shape of the polishing portion is square, but the planar shape of the polishing portion may not be square, for example, a shape that overlaps polygons other than quadrilateral , Round shape, etc.
另外,所述實施形態中,設為所述多個槽部的底面為基材的表面的構成,但槽部的深度亦可小於研磨層的平均厚度,槽部未到達基材的表面。於該情形時,槽部的深度可設為研磨層的平均厚度的50%以上。於槽部的深度小於所述下限的情形時,有因磨損而槽部消失之虞,有時研磨材的耐久性差。 In addition, in the above-described embodiment, the bottom surface of the plurality of grooves is the surface of the substrate, but the depth of the grooves may be smaller than the average thickness of the polishing layer, and the grooves may not reach the surface of the substrate. In this case, the depth of the groove can be set to 50% or more of the average thickness of the polishing layer. When the depth of the groove is smaller than the lower limit, the groove may disappear due to wear, and the durability of the abrasive may be poor.
所述實施形態中,對兩種區域的佔有面積率因槽的寬度而不同的情形進行了說明,但亦可藉由其他參數、例如槽的形狀(研磨部的形狀)或槽的間隔或個數等而改變佔有面積率。 In the above-mentioned embodiment, the case where the occupied area ratio of the two regions differs depending on the width of the groove has been described, but other parameters, such as the shape of the groove (the shape of the polishing portion) or the interval or the number of grooves may also be used. The occupied area ratio is changed according to the number.
所述實施形態中,對包含佔有面積率不同的兩種區域的研磨材進行了說明,但佔有面積率不同的區域數不限定於兩種, 佔有面積率不同的區域數亦可為三種以上。 In the above embodiment, the polishing material including two types of regions with different occupied area ratios has been described, but the number of regions with different occupied area ratios is not limited to two types. The number of regions with different occupied area ratios may be three or more.
另外,所述實施形態中,對沿著研磨方向而交替配設有多種區域的情形進行了說明,但所述多種區域的配設亦可不交替。 In addition, in the above-mentioned embodiment, the case where multiple types of areas are alternately arranged along the polishing direction has been described, but the multiple types of areas may not be alternately arranged.
所述實施形態中,示出了將基材一分為四作為各區域的情形,但該分割數不限定於4,亦可一分為二、一分為三或一分為五以上。再者,所述分割數的下限較佳為4。於所述分割數小於所述下限的情形時,被研磨體於研磨時在佔有面積率不同的區域間跨越的每單位時間的次數減少,故有由跨越阻力所得的抓握力增大效果變得不充分之虞。 In the above-mentioned embodiment, the case where the base material is divided into four is shown as each area, but the number of divisions is not limited to four, and it may be divided into two, three, or five or more. Furthermore, the lower limit of the number of divisions is preferably 4. When the number of divisions is less than the lower limit, the number of times per unit time that the object to be polished spans between regions with different occupied area ratios during polishing decreases, so the gripping force increase effect due to span resistance becomes Insufficiency.
所述第1實施形態中,對研磨材具有接著層的情形進行了說明,但接著層並非必需的構成要件,可省略。例如接著層亦可位於支持體側,另外亦可使用螺絲固定等其他固定方法而固定於支持體。 In the first embodiment described above, the case where the abrasive has an adhesive layer has been described, but the adhesive layer is not an essential constituent element and may be omitted. For example, the adhesive layer may be located on the side of the support, and other fixing methods such as screw fixing may also be used to fix it to the support.
所述實施形態中,對槽為空間的情形進行了說明,但研磨材亦可具備填充至所述槽中的填充部。所述填充部較佳為以樹脂或無機物作為主成分,且實質上不含研磨粒。再者,所謂「實質上不含研磨粒的填充部」,是指研磨粒的含量小於0.001vol%,較佳為小於0.0001vol%。 In the above-mentioned embodiment, the case where the groove is a space has been described, but the abrasive material may be provided with a filling portion filled in the groove. The filling part preferably contains resin or an inorganic substance as a main component, and does not substantially contain abrasive grains. In addition, the term "filled portion substantially free of abrasive grains" means that the content of abrasive grains is less than 0.001 vol%, preferably less than 0.0001 vol%.
於研磨材具備填充部的情形時,所述填充部的平均厚度相對於研磨層的平均厚度之比的下限較佳為0.1,更佳為0.5,進而佳為0.8,尤佳為0.95。另一方面,所述填充部的平均厚度相對於研磨層的平均厚度之比的上限較佳為1,更佳為0.98。於所述填 充部的平均厚度相對於研磨層的平均厚度之比小於所述下限的情形時,有於研磨時抑制被研磨體落入至槽中的效果變得不充分之虞。反之,於所述填充部的平均厚度相對於研磨層的平均厚度之比超過所述上限的情形時,有於研磨開始時研磨層未充分與被研磨體接觸之虞、或研磨壓力亦分散至填充層而施加於研磨層的研磨壓力變得不充分之虞。此處所謂「填充部的平均厚度」,是指基材的表面與填充部的表面的距離的平均值。 When the polishing material has a filled portion, the lower limit of the ratio of the average thickness of the filled portion to the average thickness of the polishing layer is preferably 0.1, more preferably 0.5, still more preferably 0.8, and particularly preferably 0.95. On the other hand, the upper limit of the ratio of the average thickness of the filled portion to the average thickness of the polishing layer is preferably 1, and more preferably 0.98. Fill in When the ratio of the average thickness of the filling portion to the average thickness of the polishing layer is less than the lower limit, the effect of preventing the object to be polished from falling into the groove during polishing may become insufficient. Conversely, when the ratio of the average thickness of the filling portion to the average thickness of the polishing layer exceeds the upper limit, the polishing layer may not sufficiently contact the object to be polished at the start of polishing, or the polishing pressure may be dispersed to The polishing pressure applied to the polishing layer by filling the layer may become insufficient. The "average thickness of the filled portion" herein refers to the average value of the distance between the surface of the base material and the surface of the filled portion.
以下,列舉實施例及比較例對本發明加以更詳細說明,但該發明不限定於以下的實施例。 Hereinafter, the present invention will be described in more detail with examples and comparative examples, but the present invention is not limited to the following examples.
準備金剛石研磨粒,使用日機裝股份有限公司的「麥克奇(Microtrac)MT3300EXII」測量平均粒徑。該金剛石研磨粒的平均粒徑為44μm。再者,該研磨粒的金剛石的種類為經55質量%鎳塗佈的處理金剛石。 Prepare diamond abrasive grains, and measure the average particle size using Nikkiso Co., Ltd. "Microtrac MT3300EXII". The average particle diameter of the diamond abrasive grains was 44 μm. In addition, the type of diamond of the abrasive grains was treated diamond coated with 55% by mass nickel.
將作為黏合劑的矽酸鈉(3號矽酸鈉)、所述金剛石研磨粒、及作為填充劑的氧化鋁(Al2O3,平均粒徑12μm)混合,以金剛石研磨粒相對於研磨層的含量成為5vol%及填充劑相對於研磨層的含量成為71vol%的方式製備,獲得塗敷液。 Sodium silicate (No. 3 sodium silicate) as a binder, the diamond abrasive grains, and alumina (Al 2 O 3 , average particle size 12 μm) as a filler are mixed, and the diamond abrasive grains are opposed to the polishing layer It was prepared so that the content of the powder became 5 vol% and the content of the filler relative to the polishing layer became 71 vol% to obtain a coating liquid.
準備平均厚度300μm、外徑386mm、內徑148mm的圓盤狀的鋁板作為基材。藉由通過該基材表面的中心、且與鄰接的直線成45度的角度的4條直線分割成8個區域,以沿著圓周方 向而交替配設有佔有面積率不同的兩種區域的方式形成研磨層。 具體而言,於佔有面積率小的區域中形成研磨部的俯視形狀為一邊1.5mm的正方形狀、且槽的寬度為3.5mm的研磨層,於佔有面積率大的區域中形成研磨部的俯視形狀為直徑1.2mm的圓形狀、且槽的寬度為3.8mm的研磨層。再者,使用與槽相對應的遮罩作為印刷的圖案,由此於研磨層中形成槽。另外,所述研磨部是設為規則性地排列的方塊圖案狀。兩種區域的佔有面積率及其差如表1所示。再者,所述區域具有可包含在俯視下直徑為8.5cm的圓的大小。 A disc-shaped aluminum plate with an average thickness of 300 μm, an outer diameter of 386 mm, and an inner diameter of 148 mm was prepared as a base material. The 4 straight lines passing through the center of the substrate surface and forming an angle of 45 degrees with the adjacent straight line are divided into 8 areas, so as to extend along the circumference The polishing layer is formed by alternately arranging two types of regions with different occupied area ratios. Specifically, a polishing layer with a square shape of 1.5 mm on one side and a groove width of 3.5 mm is formed in a region where the occupied area ratio is small, and a top view of the polishing region is formed in a region where the occupied area ratio is large. The shape is a circular shape with a diameter of 1.2 mm, and a polishing layer with a groove width of 3.8 mm. Furthermore, a mask corresponding to the groove is used as a printed pattern, thereby forming a groove in the polishing layer. In addition, the polishing portion has a square pattern that is arranged regularly. The occupied area ratios of the two types of areas and their differences are shown in Table 1. Furthermore, the area has a size that can include a circle with a diameter of 8.5 cm in a plan view.
使所述塗敷液於室溫(25℃)下乾燥,於60℃以上且100℃以下的溫度下加熱脫水後,於300℃下以2小時以上且4小時以下的時間硬化。 The coating liquid is dried at room temperature (25°C), heated and dehydrated at a temperature of 60°C or more and 100°C or less, and then cured at 300°C for 2 hours or more and 4 hours or less.
另外,使用平均厚度1mm的硬質氯乙烯樹脂板作為支持基材並固定於研磨裝置的支持體,利用平均厚度130μm的黏著劑將所述基材的背面與所述支持體的表面貼合。使用雙面膠帶作為所述黏著劑。如此而獲得實施例1的研磨材。 In addition, a rigid vinyl chloride resin plate with an average thickness of 1 mm was used as a support substrate and fixed to a support of the polishing apparatus, and the back surface of the substrate was bonded to the surface of the support with an adhesive with an average thickness of 130 μm. Use double-sided tape as the adhesive. In this way, the abrasive material of Example 1 was obtained.
於佔有面積率小的區域中形成研磨部的俯視形狀為一邊1.5mm的正方形狀、且槽的寬度為3.5mm的研磨層,於佔有面積率大的區域中形成研磨部的俯視形狀為直徑1.5mm的正方形狀、且槽的寬度為2.346mm的研磨層。除了所述以外,與實施例1同樣地操作而獲得實施例2的研磨材。 A polishing layer with a square shape of 1.5 mm on one side and a groove width of 3.5 mm is formed in a region with a small occupied area, and a polishing layer with a diameter of 1.5 in a plan view of a large occupied area. A polishing layer with a square shape of mm and a groove width of 2.346 mm. Except for the above, the polishing material of Example 2 was obtained in the same manner as in Example 1.
將區域設為一邊5mm的正方形狀,於佔有面積率小的區域中形成研磨部的俯視形狀為直徑1.69mm的正方形狀、且槽的寬度為3.31mm的研磨層,於佔有面積率大的區域中形成研磨部的俯視形狀為直徑1.2mm的正方形狀、且槽的寬度為3.8mm的研磨層。除了所述以外,與實施例1同樣地操作而獲得實施例3的研磨材。 The area is a square shape with a side of 5mm, and the polishing layer is formed in the area with a small area ratio. The planar shape of the polishing part is a square shape with a diameter of 1.69mm and the groove width is 3.31mm. The planar shape of the polishing portion formed therein is a polishing layer having a square shape with a diameter of 1.2 mm and a groove width of 3.8 mm. Except for the above, the abrasive material of Example 3 was obtained in the same manner as in Example 1.
除了將區域設為一邊25mm的正方形狀以外,與實施例3同樣地操作而獲得實施例4的研磨材。 The polishing material of Example 4 was obtained in the same manner as Example 3 except that the area was a square shape of 25 mm on one side.
研磨層不具有佔有面積率不同的區域,於作為基材的鋁板的表面整個面上形成研磨部的俯視形狀為直徑1.5mm的正方形狀、且槽的寬度為3.5mm的研磨層,除此以外,與實施例1同樣地操作而獲得比較例1的研磨材。 The polishing layer does not have regions with different occupied area ratios, and the polishing layer is formed on the entire surface of the aluminum plate as the substrate. The polishing part has a square shape with a diameter of 1.5 mm in plan view and a groove width of 3.5 mm. , The polishing material of Comparative Example 1 was obtained in the same manner as in Example 1.
除了形成研磨部的俯視形狀為直徑1.5mm的正方形狀、且槽的寬度為3.8mm的研磨層以外,與比較例1同樣地操作而獲得比較例2的研磨材。 Except that the planar shape of the polishing portion was a square shape with a diameter of 1.5 mm, and the width of the groove was a polishing layer of 3.8 mm, a polishing material of Comparative Example 2 was obtained in the same manner as in Comparative Example 1.
除了形成研磨部的俯視形狀為直徑1.5mm的正方形狀、且槽的寬度為2.346mm的研磨層以外,與比較例1同樣地操作而獲得 比較例3的研磨材。 It was obtained in the same manner as in Comparative Example 1, except that the polishing portion was formed in a square shape with a diameter of 1.5 mm in plan view and a groove width of 2.346 mm. The abrasive of Comparative Example 3.
使用所述實施例1~實施例4及比較例1~比較例3中所得的研磨材,進行藍寶石基板的研磨。對於所述藍寶石基板,使用直徑5.08cm、比重3.97、c面的藍寶石基板(僅經磨削(as-lap)處理)。所述研磨中,使用市售的雙面研磨機。雙面研磨機的載體為厚度0.4mm的環氧玻璃。關於研磨,將研磨壓力設為200g/cm2,使用上壓盤轉速-25rpm、下壓盤轉速50rpm及太陽齒輪轉速8rpm的條件以10分鐘為單位進行5次研磨。此時,作為冷卻劑(coolant),每分鐘供給30cc的出光興產股份有限公司的「達夫尼卡特(Daphne Cut)GS50K」。 The polishing materials obtained in the aforementioned Examples 1 to 4 and Comparative Examples 1 to 3 were used to polish the sapphire substrate. For the sapphire substrate, a sapphire substrate with a diameter of 5.08 cm, a specific gravity of 3.97, and a c-plane (only as-lap processing) was used. In the polishing, a commercially available double-sided polishing machine was used. The carrier of the double-sided grinder is epoxy glass with a thickness of 0.4 mm. Regarding the grinding, the grinding pressure was set to 200 g/cm 2 , and the upper platen rotation speed was -25 rpm, the lower platen rotation speed was 50 rpm, and the sun gear rotation speed was 8 rpm, and the grinding was performed 5 times in units of 10 minutes. At this time, as a coolant, 30 cc of Idemitsu Kosan Co., Ltd. "Daphne Cut GS50K" is supplied every minute.
<研磨速率> <grinding rate>
於算出研磨速率時,使用進行了10分鐘第1次研磨的藍寶石基板。研磨速率是將研磨前後的基板的重量變化(g)除以基板的表面積(cm2)、基板的比重(g/cm3)及研磨時間(分鐘)而算出。 將結果示於表2中。 When calculating the polishing rate, a sapphire substrate subjected to the first polishing for 10 minutes was used. The polishing rate is calculated by dividing the weight change (g) of the substrate before and after polishing by the surface area (cm 2 ) of the substrate, the specific gravity of the substrate (g/cm 3 ), and the polishing time (minutes). The results are shown in Table 2.
<維持率> <Maintenance rate>
研磨速率的維持率是將第5次研磨時的研磨速率除以第1次研磨時的研磨速率而算出。將結果示於表2中。 The maintenance rate of the polishing rate is calculated by dividing the polishing rate in the fifth polishing by the polishing rate in the first polishing. The results are shown in Table 2.
根據表2,實施例1~實施例4的研磨材與比較例1~比較例3的研磨材相比,研磨速率同等,且研磨速率不易降低。相對於此,關於比較例1~比較例3的研磨材,由於不具有佔有面積率不同的區域,故可認為無法獲得由跨越阻力所得的抓握力增大效果,研磨速率的維持率降低。由此得知,實施例1~實施例4的研磨材由於具有研磨部的佔有面積率不同的兩種區域,故研磨速率及研磨速率維持性優異。 According to Table 2, the polishing materials of Examples 1 to 4 have the same polishing rate as the polishing materials of Comparative Examples 1 to 3, and the polishing rate is less likely to decrease. In contrast, since the polishing materials of Comparative Examples 1 to 3 do not have regions with different occupied area ratios, it is considered that the gripping force increase effect due to the span resistance cannot be obtained, and the maintenance rate of the polishing rate decreases. From this, it can be seen that the polishing materials of Examples 1 to 4 have two types of regions with different occupied area ratios of the polishing portions, and therefore have excellent polishing rate and polishing rate maintenance.
另外,若將實施例1~實施例2與實施例3~實施例4相比較,則實施例1~實施例2中研磨速率不易降低。由此得知,藉由區域具有可包含在俯視下直徑為5cm的圓的大小,研磨速率維持性更優異。 In addition, if Examples 1 to 2 are compared with Examples 3 to 4, the polishing rate in Examples 1 to 2 is not easily reduced. From this, it can be seen that since the area has a size that can include a circle with a diameter of 5 cm in a plan view, the polishing rate maintenance is more excellent.
本發明的研磨材的研磨精度優異並且研磨效率不易降低,且研磨成本低。因此,該研磨材可較佳地用於電子設備等中所用的玻璃基板、或者藍寶石或碳化矽等難加工基板的研磨。 The polishing material of the present invention has excellent polishing accuracy, low polishing efficiency and low polishing cost. Therefore, the abrasive can be preferably used for the polishing of glass substrates used in electronic devices, or difficult-to-process substrates such as sapphire or silicon carbide.
1‧‧‧研磨材 1‧‧‧Grinding material
10‧‧‧基材 10‧‧‧Substrate
20‧‧‧研磨層 20‧‧‧Grinding layer
21‧‧‧研磨粒 21‧‧‧Grit
22‧‧‧黏合劑 22‧‧‧Binder
23‧‧‧槽 23‧‧‧Slot
24‧‧‧研磨部 24‧‧‧Grinding Department
X1‧‧‧第1區域 X1‧‧‧Region 1
X2‧‧‧第2區域
X2‧‧‧
X3‧‧‧第3區域 X3‧‧‧Region 3
X4‧‧‧第4區域 X4‧‧‧Region 4
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016003037 | 2016-01-08 | ||
JP2016-003037 | 2016-01-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201736047A TW201736047A (en) | 2017-10-16 |
TWI707746B true TWI707746B (en) | 2020-10-21 |
Family
ID=59274199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106100221A TWI707746B (en) | 2016-01-08 | 2017-01-05 | Abrasive material |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6316460B2 (en) |
KR (1) | KR102040144B1 (en) |
CN (1) | CN108472789B (en) |
TW (1) | TWI707746B (en) |
WO (1) | WO2017119339A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109202696A (en) * | 2018-09-10 | 2019-01-15 | 台山市远鹏研磨科技有限公司 | A kind of thinned pad of Diamond Ceramics |
JP3224896U (en) * | 2019-11-13 | 2020-01-30 | バンドー化学株式会社 | Polishing pad |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1551303A (en) * | 1999-03-30 | 2004-12-01 | ������������ʽ���� | Polishing disk, polishing machine and method for manufacturing semiconductor |
WO2015194278A1 (en) * | 2014-06-17 | 2015-12-23 | バンドー化学株式会社 | Polishing pad and method for producing polishing pad |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3009565B2 (en) * | 1993-08-18 | 2000-02-14 | 洋 橋本 | Grinding tool |
JP3069831B2 (en) * | 1994-12-16 | 2000-07-24 | 株式会社利根 | Casting cutter |
IT1288922B1 (en) * | 1996-06-13 | 1998-09-25 | Danieli Off Mecc | IN-LINE GRINDING DEVICE FOR LAMINATION CYLINDERS AND / OR DRIVE ROLLS |
US6458018B1 (en) | 1999-04-23 | 2002-10-01 | 3M Innovative Properties Company | Abrasive article suitable for abrading glass and glass ceramic workpieces |
JP2002086350A (en) | 2000-09-08 | 2002-03-26 | Noritake Diamond Ind Co Ltd | Polishing fluid for electrophoretic polishing and polishing method |
US6632129B2 (en) * | 2001-02-15 | 2003-10-14 | 3M Innovative Properties Company | Fixed abrasive article for use in modifying a semiconductor wafer |
JP3664706B2 (en) * | 2002-11-07 | 2005-06-29 | 株式会社ノリタケスーパーアブレーシブ | Grinding wheel |
JP4601317B2 (en) * | 2004-04-15 | 2010-12-22 | 株式会社リコー | Polishing tool and manufacturing method thereof |
US7491251B2 (en) * | 2005-10-05 | 2009-02-17 | 3M Innovative Properties Company | Method of making a structured abrasive article |
JP4610575B2 (en) * | 2007-03-29 | 2011-01-12 | 株式会社ノリタケスーパーアブレーシブ | Electrodeposition wheel |
JP2011031361A (en) * | 2009-08-05 | 2011-02-17 | Nihon Micro Coating Co Ltd | Polishing tool, polishing method, and method for manufacturing polishing tool |
TWM446063U (en) * | 2012-08-08 | 2013-02-01 | Ritedia Corp | Chemical mechanical polishing pad dresser |
JP2014100766A (en) | 2012-11-20 | 2014-06-05 | Sharp Corp | Sapphire substrate |
JP6155384B2 (en) * | 2013-03-29 | 2017-06-28 | サンーゴバン アブレイシブズ,インコーポレイティド | Abrasive particles having a particular shape and method for forming such particles |
KR102304574B1 (en) * | 2014-03-21 | 2021-09-27 | 엔테그리스, 아이엔씨. | Chemical mechanical planarization pad conditioner with elongated cutting edges |
-
2016
- 2016-12-26 CN CN201680077666.4A patent/CN108472789B/en active Active
- 2016-12-26 KR KR1020187017975A patent/KR102040144B1/en active IP Right Grant
- 2016-12-26 WO PCT/JP2016/088702 patent/WO2017119339A1/en active Application Filing
- 2016-12-26 JP JP2016575710A patent/JP6316460B2/en active Active
-
2017
- 2017-01-05 TW TW106100221A patent/TWI707746B/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1551303A (en) * | 1999-03-30 | 2004-12-01 | ������������ʽ���� | Polishing disk, polishing machine and method for manufacturing semiconductor |
WO2015194278A1 (en) * | 2014-06-17 | 2015-12-23 | バンドー化学株式会社 | Polishing pad and method for producing polishing pad |
Also Published As
Publication number | Publication date |
---|---|
CN108472789B (en) | 2020-06-05 |
WO2017119339A1 (en) | 2017-07-13 |
JPWO2017119339A1 (en) | 2018-01-18 |
CN108472789A (en) | 2018-08-31 |
JP6316460B2 (en) | 2018-04-25 |
KR102040144B1 (en) | 2019-11-04 |
KR20180087350A (en) | 2018-08-01 |
TW201736047A (en) | 2017-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6091704B2 (en) | Abrasive material and method for producing abrasive material | |
JP6836532B2 (en) | Abrasive | |
TWI707743B (en) | Abrasive material | |
TWI689380B (en) | Polishing pad and manufacturing method of polishing pad | |
TWI707746B (en) | Abrasive material | |
JP6085723B1 (en) | Abrasive material and method for producing abrasive material | |
TWI719210B (en) | Abrasive material | |
JPWO2019123921A1 (en) | Abrasive | |
TW201620670A (en) | Polishing pad and method for producing polishing pad | |
JP2022098876A (en) | Polishing pad | |
JP3224896U (en) | Polishing pad | |
JP2019115966A (en) | Method for production of polishing agent, and the polishing agent | |
TW201801857A (en) | Abrasive material | |
TW202222498A (en) | Polishing pad which can maintain high planarization accuracy and increase the polishing rate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |