TWI689380B - Polishing pad and manufacturing method of polishing pad - Google Patents
Polishing pad and manufacturing method of polishing pad Download PDFInfo
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- TWI689380B TWI689380B TW105114249A TW105114249A TWI689380B TW I689380 B TWI689380 B TW I689380B TW 105114249 A TW105114249 A TW 105114249A TW 105114249 A TW105114249 A TW 105114249A TW I689380 B TWI689380 B TW I689380B
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
- B24D7/08—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental with reinforcing means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D9/00—Wheels or drums supporting in exchangeable arrangement a layer of flexible abrasive material, e.g. sandpaper
- B24D9/08—Circular back-plates for carrying flexible material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
本發明的研磨墊包括基材膜;以及研磨層,積層於該基材膜的表面側且含有研磨粒及其黏合劑,研磨層具有沿著其研磨方向被劃分而成的、平均高度不同的多種區域,當將與每個區域的自研磨層整體的重心的距離對應的多個分割部分中的研磨層的最大高度的平均值設為該區域的基準高度時,鄰接的一對區域的基準高度的差為5μm以上且小於100μm。多種區域包含基準區域、與研磨層的平均高度小於該基準區域的低高度區域,且可沿著研磨方向交替地配設。研磨層可具有以大致相等的密度配設的、在俯視下呈一定形狀的多個研磨部。 The polishing pad of the present invention includes a base film; and a polishing layer, which is laminated on the surface side of the base film and contains abrasive particles and a binder, the polishing layer has different average heights divided along the polishing direction A variety of areas, when the average value of the maximum height of the polishing layer in the divided portions corresponding to the distance from the center of gravity of the entire polishing layer of each area is set as the reference height of the area, the reference of the adjacent pair of areas The difference in height is 5 μm or more and less than 100 μm. The various regions include a reference region and a low-height region whose average height with the polishing layer is smaller than the reference region, and can be alternately arranged along the polishing direction. The polishing layer may have a plurality of polishing portions arranged in a substantially equal density and having a certain shape in plan view.
Description
本發明是有關於一種研磨墊(polishing pad)及研磨墊的製造方法。 The invention relates to a polishing pad and a manufacturing method of the polishing pad.
近年來,硬碟(hard disk)等電子機器的精密化不斷發展。作為此種電子機器的基板材料,考慮到可應對小型化或薄型化的剛性、耐衝擊性及耐熱性,而大多使用玻璃。該玻璃基板為脆性材料,且因表面的傷痕而顯著損及機械強度。因此,此種基板(被削體)的研磨中,要求加工效率以及傷痕少的平坦化精度。 In recent years, the precision of electronic devices such as hard disks has continued to develop. As substrate materials for such electronic devices, glass is often used in consideration of rigidity, impact resistance, and heat resistance that can cope with miniaturization or thinning. The glass substrate is a brittle material, and is significantly damaged and mechanically damaged due to surface scratches. Therefore, in the polishing of such a substrate (object to be cut), processing efficiency and flattening accuracy with few scratches are required.
通常若欲提高精加工的平坦化精度,則有加工時間變長的傾向,加工效率與平坦化精度成為取捨(trade-off)的關係。因此難以兼顧加工效率與平坦化精度。相對於此,為了兼顧加工效率與平坦化精度,提出有如下研磨墊,該研磨墊具有含有黏合劑及研磨粒的研磨層,且該研磨層具有研磨部(參照日本專利特表2002-542057號公報)。 Generally, if the flattening accuracy of finishing is to be improved, the processing time tends to become longer, and the processing efficiency and the flattening accuracy have a trade-off relationship. Therefore, it is difficult to balance processing efficiency and flattening accuracy. On the other hand, in order to balance processing efficiency and flattening accuracy, there has been proposed a polishing pad having a polishing layer containing a binder and abrasive grains, and the polishing layer having a polishing portion (refer to Japanese Patent No. 2002-542057 Bulletin).
但是,此種現有的研磨墊若實施一定時間的研磨,則因研磨粒的磨耗(dulling)或研磨層表面的堵塞(clogging)而研磨速率降低。為了使該降低的研磨速率再生,將研磨墊的表面削落而使新的面於表面露出,需要進行所謂的修整(dressing)。在該 修整前後,亦需要清掃研磨墊,該修整是需要時間的作業。由於在修整之間,玻璃基板的研磨被中斷,故而現有的研磨墊因進行修整而導致研磨效率大幅度地降低。 However, when such a conventional polishing pad is polished for a certain period of time, the polishing rate is reduced due to the wearing of abrasive grains or clogging of the surface of the polishing layer. In order to regenerate this reduced polishing rate, the surface of the polishing pad is shaved to expose a new surface to the surface, and so-called dressing is required. In that Before and after dressing, the polishing pad also needs to be cleaned. This dressing is a time-consuming operation. Since the polishing of the glass substrate is interrupted between the dressings, the polishing efficiency of the conventional polishing pad is greatly reduced due to the dressing.
[專利文獻1]日本專利特表2002-542057號公報 [Patent Document 1] Japanese Patent Special Publication No. 2002-542057
本發明是鑒於此種不良狀況而成,其目的在於提供一種具有高的平坦化精度,且在比較長的期間內研磨速率不易降低的研磨墊。 The present invention is made in view of such an inconvenience, and its object is to provide a polishing pad having high flattening accuracy and having a relatively low polishing rate over a relatively long period.
為了解決所述課題而成的發明為一種研磨墊,其包括基材膜;以及研磨層,積層於該基材膜的表面側且含有研磨粒及其黏合劑,所述研磨層具有沿著其研磨方向被劃分而成的、平均高度不同的多種區域,當將與每個所述區域的自研磨層整體的重心的距離對應的多個分割部分中的研磨層的最大高度的平均值設為該區域的基準高度時,鄰接的一對所述區域的基準高度的差為5μm以上且小於100μm。 The invention made in order to solve the above problem is a polishing pad including a base film; and an abrasive layer laminated on the surface side of the base film and containing abrasive grains and its binder, the abrasive layer having A plurality of regions with different average heights divided by the polishing direction, when the average value of the maximum height of the polishing layer in the plurality of divided portions corresponding to the distance from the center of gravity of the entire polishing layer of each of the regions is defined as In the reference height of this area, the difference between the reference heights of a pair of adjacent areas is 5 μm or more and less than 100 μm.
該研磨墊由於研磨層具有沿著研磨方向被劃分而成的、平均高度不同的多種區域,故而在研磨時,被削體一面自高度小的區域向大的區域或向其相反方向移動一面被研磨。藉由將 該高度差設為所述範圍內,利用其運轉阻力而該研磨墊的夾持(grip)力得到提高,另外,於高度大的區域中,表面壓力(surface pressure)得到提高。由此,該研磨墊可更有效地活用研磨時的表面壓力,因此具有高的平坦化精度,且在比較長的期間內研磨速率不易降低。因此,該研磨墊不需頻繁地進行修整,故而可實現運轉成本(running cost)的減少或步驟管理的簡易化。 The polishing pad has a plurality of regions with different average heights divided along the polishing direction. Therefore, during polishing, the workpiece is moved from a small height region to a large region or in the opposite direction. Grind. By putting The height difference is set within the above range, and the gripping force of the polishing pad is increased by its running resistance, and the surface pressure is increased in a region with a large height. Thus, the polishing pad can more effectively utilize the surface pressure during polishing, so it has high flattening accuracy, and the polishing rate is not likely to decrease over a relatively long period of time. Therefore, the polishing pad does not need to be trimmed frequently, so that the running cost can be reduced or the step management can be simplified.
該研磨墊為圓盤狀者,且可以大致相等的角度間隔配設有所述多種區域。玻璃基板等的研磨通常是藉由一面旋轉研磨墊一面抵接於被削體而進行。因此,使用圓盤狀者且以大致相等的角度間隔配設多種區域,由此被削體於區域間週期性地移動,故而進一步可獲得高的平坦化精度與研磨速率的降低的抑制效果。 The polishing pad is disk-shaped, and the plurality of regions can be arranged at substantially equal angular intervals. Polishing of glass substrates and the like is usually performed by rotating the polishing pad while contacting the workpiece. Therefore, by using a disc-shaped one and arranging a plurality of regions at substantially equal angular intervals, the shaved body periodically moves between the regions, so that a higher flattening accuracy and a reduction effect of a reduction in the polishing rate can be further obtained.
所述多種區域包含基準區域、與研磨層的平均高度小於該基準區域的低高度區域,且可沿著研磨方向交替地配設。如此交替地配設平均高度不同的兩種區域,由此可維持高的平坦化精度與研磨速率的降低的抑制效果,並且抑制研磨墊的製造成本的增加。 The various regions include a reference region and a low-height region whose average height with the polishing layer is smaller than the reference region, and can be alternately arranged along the polishing direction. By alternately arranging two types of regions with different average heights in this manner, it is possible to maintain high flattening accuracy and a suppression effect of a reduction in polishing rate, and suppress an increase in the manufacturing cost of the polishing pad.
所述研磨層可具有以大致相等的密度配設的、在俯視下呈一定形狀的多個研磨部。如此以大致相等的密度配設一定形狀的研磨部,且規則地進行研磨部的配置,由此可容易控制對進行研磨的被削體的表面壓力或研磨作用點數,因此平坦化精度進一步提高。 The polishing layer may have a plurality of polishing portions arranged in a substantially equal density and having a certain shape in plan view. In this way, the polishing portions of a certain shape are arranged at a substantially equal density, and the polishing portions are regularly arranged, so that the surface pressure or the number of polishing action points on the workpiece to be polished can be easily controlled, so the flattening accuracy is further improved .
因此,該研磨墊可較佳地用於以玻璃基板為代表的平面 基板的研磨。 Therefore, the polishing pad can be preferably used for a plane represented by a glass substrate Polishing of substrates.
為了解決所述課題而成的另一發明為一種研磨墊的製造方法,其是如下研磨墊的製造方法,所述研磨墊包括基材膜;以及研磨層,積層於該基材膜的表面側且含有研磨粒及其黏合劑,所述研磨墊的製造方法包括將含有研磨粒及其黏合劑材料的研磨層用組成物印刷於所述基材膜的表面側沿著其研磨方向被劃分而成的多種區域的每一個的步驟,當將與每個所述區域的自研磨層整體的重心的距離對應的多個分割部分中的研磨層的最大高度的平均值設為該區域的基準高度時,藉由使所述印刷步驟中的印刷次數或研磨層用組成物的組成不同,而將鄰接的一對所述區域的基準高度的差調整為5μm以上且小於100μm。 Another invention made to solve the above problem is a method of manufacturing a polishing pad, which is a method of manufacturing a polishing pad including a substrate film; and a polishing layer stacked on the surface side of the substrate film And contains abrasive grains and their binders, and the method of manufacturing the polishing pad includes printing the composition for the polishing layer containing the abrasive grains and their binder materials on the surface side of the base film along the direction of polishing For each of the various regions into which the average height of the polishing layer in the multiple divided parts corresponding to the distance from the center of gravity of the entire polishing layer of each of the regions is set as the reference height of the region In this case, the difference between the reference heights of the adjacent pair of regions is adjusted to 5 μm or more and less than 100 μm by changing the number of prints in the printing step or the composition of the polishing layer composition.
關於該研磨墊的製造方法,藉由使印刷步驟中的與各區域對應的印刷次數或研磨層用組成物的組成不同,可容易且可靠地製造具有平均高度不同的多種區域且鄰接的一對所述區域的基準高度的差為所述範圍內的研磨墊。 With regard to the manufacturing method of this polishing pad, by making the number of printings corresponding to each area in the printing step or the composition of the composition for the polishing layer different, it is possible to easily and reliably manufacture a pair of adjacent areas having multiple areas with different average heights The difference in the reference height of the area is the polishing pad within the range.
此處,所謂「研磨層的平均高度」,是指例如使用雷射位移計(基恩士(KEYENCE)股份有限公司的「LJV7020」)所測定的自基材膜平均界面的研磨層的高度的平均值。所謂「平均高度不同的多種區域」,是指將相對於平均高度的偏差為3%以內的區域設為一個區域,而該平均高度不同的多個區域。另外,所謂「自研磨層整體的重心的距離對應的多個分割部分」,是指當將自研磨層整體的重心至該區域的最短距離設為X[mm]、將最長距離 設為Y[mm]時,自研磨層整體的重心的距離被分割為X[mm]以上且小於(X+1/n(Y-X))[mm]、(X+1/n(Y-X))[mm]以上且小於(X+2/n(Y-X))[mm]、…(X+(n-1)/n(Y-X))[mm]以上且Y[mm]以下的n個部分。此處n為2以上的整數,例如可為n=3。 Here, the "average height of the polishing layer" refers to, for example, the height of the polishing layer from the average interface of the base film measured using a laser displacement meter ("LJV7020" of KEYENCE). average value. The so-called "multiple areas with different average heights" refer to areas with a deviation of less than 3% from the average height as one area, and multiple areas with different average heights. In addition, the "multiple divided portions corresponding to the distance from the center of gravity of the entire polishing layer" means that when the shortest distance from the center of gravity of the entire polishing layer to the region is X [mm], the longest distance When set to Y[mm], the distance from the center of gravity of the entire polishing layer is divided into X[mm] or more and less than (X+1/n(YX))[mm], (X+1/n(YX)) [mm] or more and less than (X+2/n(YX))[mm], ... (X+(n-1)/n(YX)) [mm] or more and n parts below Y[mm]. Here, n is an integer of 2 or more, for example, n=3.
所謂「區域大致相等的角度」,是指連結圓盤的中心與各區域的中心的放射線形成的角的最小值與最大值的差為10°以下,所謂「研磨部大致相等的密度」,是指多個研磨部的間隔的偏差與面積的偏差分別相對於平均值而為10%以內。另外,所謂「研磨方向」,是研磨墊在研磨時移動的方向,例如若為圓盤狀的研磨墊則是指圓周方向。 The so-called "area with approximately equal angles" means that the difference between the minimum and maximum angles formed by the radiation connecting the center of the disc and the centers of each area is 10° or less. The so-called "approximately equal density of the polished portion" is It means that the deviation of the interval between the plurality of polishing sections and the deviation of the area are within 10% of the average value, respectively. In addition, the "polishing direction" refers to the direction in which the polishing pad moves during polishing. For example, if it is a disc-shaped polishing pad, it refers to the circumferential direction.
如以上說明般,本發明的研磨墊具有高的平坦化精度,且在比較長的期間內研磨速率不易降低。因此,該研磨墊不需頻繁地進行修整,故而可實現運轉成本的減少或步驟管理的簡易化。 As described above, the polishing pad of the present invention has high planarization accuracy, and the polishing rate is not likely to decrease over a relatively long period of time. Therefore, the polishing pad does not need to be trimmed frequently, so that the running cost can be reduced or the step management can be simplified.
1、2:研磨墊 1, 2: grinding pad
10、11:基材膜 10, 11: substrate film
20:研磨層 20: Grinding layer
21:研磨粒 21: abrasive grain
22:黏合劑 22: Adhesive
23:槽 23: slot
24:研磨部 24: Grinding Department
30:接著層 30: then layer
40:支持體 40: Support
41:支持體接著層 41: Support layer
X1、X2、X3、X4:區域 X1, X2, X3, X4: area
圖1A是表示本發明的實施方式的研磨墊的示意性平面圖。 FIG. 1A is a schematic plan view showing a polishing pad according to an embodiment of the present invention.
圖1B是圖1A的A-A線的示意性剖面圖。 FIG. 1B is a schematic cross-sectional view taken along line A-A of FIG. 1A.
圖2是表示與圖1B不同的實施方式的研磨墊的示意性剖面圖。 2 is a schematic cross-sectional view showing a polishing pad of an embodiment different from FIG. 1B.
[第1實施方式] [First embodiment]
以下,一面適當參照圖式一面對本發明的第1實施方式進行詳細說明。 Hereinafter, the first embodiment of the present invention will be described in detail with appropriate reference to the drawings.
<研磨墊> <grinding pad>
圖1A及圖1B所示的該研磨墊1為圓盤狀,且主要包括基材膜10、以及積層於其表面側的研磨層20。另外,該研磨墊1包括積層於基材膜10的背面側的接著層30。
The
(基材膜) (Substrate film)
所述基材膜10是用以支持研磨層20的板狀構件。
The
作為所述基材膜10的材質並無特別限定,可列舉:聚對苯二甲酸乙二酯(Polyethylene Terephthalate,PET)、聚丙烯(Polypropylene,PP)、聚乙烯(Polyethylene,PE)、聚醯亞胺(Polyimide,PI)、聚萘二甲酸乙二酯(Polyethylene Naphthalate,PEN)、芳香族聚醯胺(aramid)、鋁、銅等。其中,較佳為與研磨層20的接著性良好的PET及PI。另外,亦可對基材膜10的表面進行化學處理、電暈處理(corona treatment)、底塗處理(primer treatment)等提高接著性的處理。
The material of the
作為所述基材膜10的大小並無特別限制,例如可設為外徑為270mm以上且320mm以下及內徑為80mm以上且130mm以下的圓環狀。
The size of the
作為所述基材膜10的平均厚度並無特別限制,例如可製成75μm以上且1mm以下。在所述基材膜10的平均厚度小於所述下限的情況下,有該研磨墊1的強度或平坦性不足之虞。另
一方面,在所述基材膜10的平均厚度超過所述上限的情況下,有該研磨墊1不必要地變厚而難以操作之虞。
The average thickness of the
(研磨層) (Grinding layer)
研磨層20含有研磨粒21及其黏合劑22。所述研磨層20沿著其研磨方向被劃分為多個區域X1、區域X2、區域X3及區域X4,且具有平均高度不同的兩種區域X1及區域X3與區域X2及區域X4。另外,所述研磨層20在表面具有多個槽23。
The
所述研磨層20的平均厚度(去除槽23的平均厚度)並無特別限制,作為所述研磨層20的平均厚度的下限較佳為25μm,更佳為30μm。另外,作為所述研磨層20的平均厚度的上限較佳為1000μm,更佳為800μm。在所述研磨層20的平均厚度小於所述下限的情況下,有研磨層20的耐久性不足之虞。另一方面,在所述研磨層20的平均厚度超過所述上限的情況下,有該研磨墊1不必要地變厚而難以操作之虞。
The average thickness of the polishing layer 20 (the average thickness of the removal groove 23) is not particularly limited, and the lower limit of the average thickness of the
(研磨粒) (Grinding grain)
作為所述研磨粒21可列舉金剛石、氧化鋁、氧化矽等粒子。其中,較佳為可獲得高研磨效率的金剛石研磨粒。
Examples of the
作為所述研磨粒21的平均粒徑的下限較佳為3μm,更佳為10μm。另外,作為所述研磨粒21的平均粒徑的上限較佳為15μm,更佳為14μm。在所述研磨粒21的平均粒徑小於所述下限的情況下,有研磨速率變得不充分之虞。另一方面,在所述研磨粒21的平均粒徑超過所述上限的情況下,有被削體受到損傷之
虞。
The lower limit of the average particle diameter of the
作為所述研磨粒21相對於研磨層20的含量的下限較佳為35體積%,更佳為40體積%。另外,作為所述研磨粒21相對於研磨層20的含量的上限較佳為70體積%,更佳為65體積%。在所述研磨粒21相對於研磨層20的含量小於所述下限的情況下,有研磨層20的研磨力不足之虞。另一方面,在所述研磨粒21相對於研磨層20的含量超過所述上限的情況下,有被削體受到損傷之虞。
The lower limit of the content of the polishing
(黏合劑) (Binder)
作為構成所述黏合劑22的組成物並無特別限定,可以熱硬化性樹脂作為主成分。熱硬化性樹脂可列舉:聚胺基甲酸酯、多酚、環氧、聚酯、纖維素、乙烯共聚物、聚乙烯縮醛、聚丙烯酸、丙烯酸酯、聚乙烯醇、聚氯乙烯、聚乙酸乙烯酯、聚醯胺等。該些之中,較佳為熱硬化性環氧。熱硬化性環氧在構成黏合劑22時容易確保研磨粒21的良好的分散性及與基材膜10的良好的密接性。此處所謂「主成分」,是指含量最多的成分,例如是指含量為50質量%以上的成分。
The composition constituting the adhesive 22 is not particularly limited, and a thermosetting resin can be used as a main component. Examples of thermosetting resins include polyurethane, polyphenol, epoxy, polyester, cellulose, ethylene copolymer, polyvinyl acetal, polyacrylic acid, acrylate, polyvinyl alcohol, polyvinyl chloride, poly Vinyl acetate, polyamide, etc. Among these, thermosetting epoxy is preferred. When the thermosetting epoxy constitutes the adhesive 22, it is easy to ensure good dispersibility of the
可使用無機物作為所述黏合劑22的主成分。作為此種無機物可列舉:矽酸鹽、磷酸鹽、多價金屬醇鹽等。其中,較佳為研磨層20的研磨粒子保持力高的矽酸鹽。
An inorganic substance can be used as the main component of the adhesive 22. Examples of such an inorganic substance include silicate, phosphate, and polyvalent metal alkoxide. Among them, silicate having a high abrasive particle holding power of the
亦可根據目的使所述黏合劑22中適當含有分散劑、偶合劑(coupling agent)、界面活性劑、潤滑劑、消泡劑、著色劑等 各種助劑及添加劑等。另外,所述黏合劑22的樹脂亦可至少一部分進行交聯。 The adhesive 22 may also contain a dispersant, a coupling agent, a surfactant, a lubricant, a defoaming agent, a coloring agent, etc. as appropriate according to the purpose Various additives and additives. In addition, at least a part of the resin of the adhesive 22 may be cross-linked.
(槽) (groove)
所述研磨層20的表面具有經槽23劃分的多個研磨部24。劃分所述研磨部24的槽23的底面由基材膜10的表面構成。另外,所述槽23是在研磨層20的區域X1、區域X2、區域X3及區域X4的表面上呈等間隔的格子狀而配設。即,研磨部24在俯視下為一定形狀,且以大致相等的密度而配設。如此以大致相等的密度配設一定形狀的研磨部24,由此可容易控制對進行研磨的被削體的表面壓力或研磨作用點數,從而平坦化精度進一步提高。
The surface of the
作為所述槽23的平均寬度的下限較佳為0.3mm,更佳為0.5mm。另外,作為所述槽23的平均寬度的上限較佳為10mm,更佳為8mm。在所述槽23的平均寬度小於所述下限的情況下,有因研磨而產生的研磨粉堵塞槽23之虞。另一方面,在所述槽23的平均寬度超過所述上限的情況下,有在研磨時對被削體產生損傷之虞。
The lower limit of the average width of the
作為所述研磨部24的各個的平均面積的下限較佳為1mm2,更佳為2mm2。另外,作為所述研磨部24的平均面積的上限較佳為150mm2,更佳為130mm2。在所述研磨部24的平均面積小於所述下限的情況下,有研磨部24自基材膜10剝離之虞。另一方面,在所述研磨部24的平均面積超過所述上限的情況下,有在研磨時研磨層20對被削體的接觸面積增大而研磨效率降低之
虞。
The lower limit of each average area of the polishing
作為所述多個研磨部24相對於所述研磨層20整體的面積佔有率的下限較佳為20%,更佳為30%。另外,作為所述多個研磨部24相對於所述研磨層20整體的面積佔有率的上限較佳為60%,更佳為55%。在所述多個研磨部24相對於所述研磨層20整體的面積佔有率小於所述下限的情況下,有由於對進行研磨的被削體的表面壓力或研磨作用點數的控制變得不充分,故而無法獲得充分的平坦化精度之虞。另一方面,在所述多個研磨部24相對於所述研磨層20整體的面積佔有率超過所述上限的情況下,有研磨層20的研磨時的摩擦阻力變高而被削體受到損傷之虞。此外,在研磨層具有槽的情況下,「研磨層整體的面積」為亦包括該槽的面積的概念。
The lower limit of the area occupancy of the plurality of polishing
(研磨層的區域) (Abrasive layer area)
兩種區域X1及區域X3與區域X2及區域X4包含基準區域X1及區域X3、與研磨層20的平均高度小於該基準區域X1及區域X3的低高度區域X2及區域X4,且沿著研磨方向交替地配設。另外,各區域藉由通過研磨層20的圓環的中心且正交的兩條直線而分割。即,所述區域X1、區域X2、區域X3及區域X4以大致相等的角度間隔而配設。如此以大致相等的角度間隔配設兩種區域,由此被削體於區域間週期性地移動,因此進一步可獲得高的平坦化精度與研磨速率的降低的抑制效果。
The two types of regions X1 and X3 and X2 and X4 include the reference region X1 and X3, and the average height of the
另外,槽23的其中一個可以與分割區域的邊界一致的
方式配設。藉由使槽23的其中一個與邊界一致,而區域間的階差夾著槽23而相向,因此槽23成為緩衝區域(area)而可抑制被削體的缺邊或破裂的產生。
In addition, one of the
作為所述區域的與鄰接的區域的基準高度的差(例如X1與X2的基準高度的差)的下限為5μm,更佳為20μm,進而更佳為40μm。另外,作為所述區域的基準高度的差小於100μm,更佳為小於90μm,進而更佳為小於80μm。在所述區域的基準高度的差小於所述下限的情況下,由於運轉阻力減少,故而有由運轉阻力引起的夾持力提高效果不足之虞。相反,在所述區域的基準高度的差為所述上限以上的情況下,由於運轉阻力過大,故而有產生被削體的缺邊或破裂之虞。 The lower limit of the difference in the reference height between the region and the adjacent region (for example, the difference in reference height between X1 and X2) is 5 μm, more preferably 20 μm, and still more preferably 40 μm. In addition, the difference in the reference heights of the regions is less than 100 μm, more preferably less than 90 μm, and even more preferably less than 80 μm. When the difference in the reference height of the area is less than the lower limit, since the running resistance is reduced, the effect of improving the gripping force due to the running resistance may be insufficient. Conversely, when the difference in the reference height of the area is equal to or greater than the upper limit, the running resistance is too large, so there is a risk of chipping or cracking of the workpiece.
(接著層) (Next layer)
接著層30是將該研磨墊1固定於支持體上的層,所述支持體是用以支持該研磨墊1並將其安裝於研磨裝置。
Next, the
作為該接著層30中所使用的接著劑並無特別限定,例如可列舉:反應型接著劑、瞬間接著劑、熱熔接著劑、黏著劑等。
The adhesive used in the
作為該接著層30中所使用的接著劑較佳為黏著劑。藉由使用黏著劑作為接著層30中所使用的接著劑,可將該研磨墊1自支持體剝離並重新貼合,因此容易將該研磨墊1及支持體再利用。作為此種黏著劑並無特別限定,例如可列舉:丙烯酸系黏著劑、丙烯酸-橡膠系黏著劑、天然橡膠系黏著劑、丁基橡膠系等合成橡膠系黏著劑、矽酮系黏著劑、聚胺基甲酸酯系黏著劑等。
The adhesive used as the
作為接著層30的平均厚度的下限較佳為0.05mm,更佳為0.1mm。另外,作為接著層30的平均厚度的上限較佳為0.3mm,更佳為0.2mm。在接著層30的平均厚度小於所述下限的情況下,有接著力不足而研磨墊1自支持體剝離之虞。另一方面,在接著層30的平均厚度超過所述上限的情況下,例如有因接著層30的厚度而在將該研磨墊1切成所期望的形狀時帶來障礙等作業性下降之虞。
The lower limit of the average thickness of the
研磨層20的第五次研磨時的研磨速率相對於第一次研磨中的研磨速率的比的下限較佳為90%,更佳為95%,進而更佳為99%。在所述研磨速率的比小於所述下限的情況下,有因研磨速率的降低而研磨效率降低之虞。此處,所謂「研磨速率」,是指在研磨壓力150g/cm2、上壓盤轉數60rpm、下壓盤轉數90rpm及太陽齒輪轉數30rpm的條件下對直徑6.25cm、比重2.4的鈉鈣玻璃反覆進行15分鐘研磨時的每一次的研磨速率。具體而言,研磨速率是藉由研磨前後的玻璃基板的重量變化(g)除以基板的表面積(μm2)、基板的比重(g/μm3)及研磨時間(分鐘)而算出。
The lower limit of the ratio of the polishing rate of the
<研磨墊的製造方法> <Manufacturing method of polishing pad>
該研磨墊1可藉由以下步驟而製造:準備研磨層用組成物的步驟;將研磨層用組成物印刷於基材膜10的表面側的步驟;以及貼附接著層30的步驟。關於該研磨墊1,藉由使所述印刷步驟中的印刷次數或研磨層用組成物的組成不同,而將鄰接的一對所述區域的基準高度的差調整為規定範圍內。以下,對所述兩種方法
進行說明。
The
[根據印刷次數的方法] [Method according to printing times]
首先,對藉由使印刷次數不同,而將鄰接的一對所述區域的基準高度的差調整為規定範圍內的該研磨墊1的製造方法進行說明。
First, a method of manufacturing the
(研磨層用組成物準備步驟) (Preparation step of composition for polishing layer)
首先,在研磨層用組成物準備步驟中,準備使含有研磨粒21及其黏合劑22的研磨層用組成物分散於溶劑中而成的溶液作為塗敷液。所述溶劑只要可將黏合劑22的形成材料溶解,則並無特別限定。具體而言,可使用甲基乙基酮(Methyl Ethyl Ketone,MEK)、異佛爾酮、松脂醇、N-甲基吡咯啶酮、環己酮、碳酸丙烯酯(propylene carbonate)等。為了控制塗敷液的黏度或流動性,亦可添加水、醇、酮、乙酸酯、芳香族化合物等稀釋劑等。
First, in the preparation step for the polishing layer composition, a solution obtained by dispersing the polishing layer composition containing the
(印刷步驟) (Printing steps)
其次,在印刷步驟中,使用所述研磨層用組成物準備步驟中所準備的塗敷液,將所述研磨層用組成物印刷於基材膜10的表面側沿著其研磨方向被劃分而成的兩種區域上。具體而言,以兩種區域沿著其研磨方向交替地配設的方式劃分所述基材膜10的表面。即,準備與該兩種區域對應的遮罩,經由該遮罩來印刷所述研磨層用組成物。此外,為了形成槽23,所述遮罩具有與槽23的形狀對應的形狀。
Next, in the printing step, using the coating liquid prepared in the polishing layer composition preparation step, the polishing layer composition is printed on the surface side of the
作為該印刷方式例如可使用網版印刷、金屬遮罩印刷
等。印刷後,使塗敷液加熱脫水及加熱硬化,由此形成研磨層20。具體而言,例如使塗敷液於室溫(25℃)下乾燥,利用70℃以上且90℃以下的熱進行加熱脫水後,利用100℃以上且160℃以下的熱進行硬化,形成黏合劑22。
As this printing method, for example, screen printing or metal mask printing can be used
Wait. After printing, the coating liquid is dehydrated by heating and hardened by heating, thereby forming the
在所述印刷步驟中,分別進行如下印刷:僅對基準區域進行印刷的使用遮罩的研磨層用組成物的印刷;以及僅對低高度區域進行印刷的使用遮罩的研磨層用組成物的印刷。此時,藉由增加基準區域的印刷次數,可增大研磨層20的平均高度。如此藉由使印刷次數不同,而將鄰接的一對所述區域的基準高度的差調整為規定範圍內。
In the printing step, the following printings are respectively performed: printing of the composition for the polishing layer using the mask for printing only on the reference area; print. At this time, by increasing the number of printing in the reference area, the average height of the
(接著層貼附步驟) (Then attach the layer step)
最後,在接著層貼附步驟中,將接著層30貼附於所述基材膜10的背面,從而可獲得該研磨墊1。
Finally, in the adhesive layer attaching step, the
[根據研磨層用組成物的組成的方法] [The method according to the composition of the polishing layer composition]
首先,對藉由使研磨層用組成物的組成不同,而將鄰接的一對所述區域的基準高度的差調整為規定範圍內的該研磨墊1的製造方法進行說明。
First, a method of manufacturing the
(研磨層用組成物準備步驟) (Preparation step of composition for polishing layer)
在研磨層用組成物準備步驟中,準備使含有研磨粒21及其黏合劑22的研磨層用組成物分散於溶劑中而成的溶液作為塗敷液。作為所述溶劑可與根據印刷次數的方法中所說明的溶劑相同。
In the preparation step for the polishing layer composition, a solution obtained by dispersing the polishing layer composition containing the
本方法中,準備配方不同的兩種研磨層用組成物。即,
改變使用於平均高度不同的兩種區域(區域X1及區域X3與區域X2及區域X4)的研磨層用組成物的配方。具體而言,準備固體成分濃度高的研磨層用組成物作為平均高度大的兩個區域的印刷中所使用的研磨層用組成物,且準備固體成分濃度低的研磨層用組成物作為平均高度小的兩個區域的印刷中所使用的研磨層用組成物。如此與進行印刷的區域對應地改變研磨層用組成物,由此可針對每個區域改變利用相同的印刷次數所形成的研磨層20的平均高度。
In this method, two compositions for abrasive layers with different formulations are prepared. which is,
The formulation of the polishing layer composition used in two regions (region X1 and region X3 and region X2 and region X4) with different average heights was changed. Specifically, a composition for a polishing layer with a high solid content concentration is prepared as a composition for a polishing layer used in printing of two regions with a large average height, and a composition for a polishing layer with a low solid content concentration is prepared as an average height A composition for an abrasive layer used for printing in two small areas. In this way, by changing the composition for the polishing layer corresponding to the area where printing is performed, the average height of the
(印刷步驟) (Printing steps)
其次,在印刷步驟中,使用所述研磨層用組成物準備步驟中所準備的塗敷液,針對基材膜10的表面側沿著其研磨方向被劃分而成的兩種區域印刷所述研磨層用組成物。關於使用的遮罩及印刷方式,可與根據印刷次數的方法相同。
Next, in the printing step, the coating liquid prepared in the polishing layer composition preparation step is used to print the polishing for two types of areas divided along the polishing direction on the surface side of the
在所述印刷步驟中,分別進行如下印刷:僅對基準區域進行印刷的使用遮罩的固體成分濃度高的研磨層用組成物的印刷;以及僅對低高度區域進行印刷的使用遮罩的固體成分濃度低的研磨層用組成物的印刷。此時,由於基準區域的印刷中所使用的研磨層用組成物的固體成分濃度高,故而可增大基準區域的研磨層20的平均高度。該情況下,基準區域的印刷次數可與低高度區域的印刷次數為相同次數。如此藉由使研磨層用組成物的組成不同,而將鄰接的一對所述區域的基準高度的差調整為規定範圍內。
In the printing step, the following printings are respectively performed: printing of a composition for a polishing layer with a high solid content concentration using a mask for printing only on a reference area; and solid using a mask for printing only in a low-height area Printing of the composition for the polishing layer with a low component concentration. At this time, since the solid content concentration of the polishing layer composition used in the printing of the reference area is high, the average height of the
(接著層貼附步驟) (Then attach the layer step)
最後,在接著層貼附步驟中,將接著層30貼附於所述基材膜10的背面,從而可獲得該研磨墊1。
Finally, in the adhesive layer attaching step, the
<優點> <Advantages>
該研磨墊1由於研磨層20具有沿著研磨方向被劃分而成的、平均高度不同的多種區域,故而在研磨時,被削體一面自高度小的區域向大的區域或向其相反方向移動一面被研磨。藉由將該高度差設為所述範圍內,利用其運轉阻力而該研磨墊1的夾持力得到提高,另外,在高度大的區域中,表面壓力得到提高。由此,該研磨墊1可更有效地活用研磨時的表面壓力,因此具有高的平坦化精度,且在比較長的期間內研磨速率不易降低。因此,該研磨墊1不需頻繁地進行修整,故而可實現運轉成本的減少或步驟管理的簡易化。
Since the
因此,該研磨墊1可較佳地用於以玻璃基板為代表的平面基板的單面或兩面研磨。
Therefore, the
另外,關於該研磨墊1的製造方法,藉由使印刷步驟中的與各區域對應的印刷次數或研磨層用組成物的組成不同,可容易且可靠地製造具有平均高度不同的多種區域且鄰接的一對所述區域的基準高度的差為所述範圍內的研磨墊1。
In addition, the manufacturing method of the
[第2實施方式] [Second Embodiment]
以下,一面適當參照圖式一面對本發明的第2實施方式進行詳細說明。 Hereinafter, the second embodiment of the present invention will be described in detail with appropriate reference to the drawings.
<研磨墊> <grinding pad>
圖2所示的該研磨墊2為圓盤狀,且包括基材膜11、以及積層於其表面側的研磨層20。另外,該研磨墊2包括積層於基材膜11的背面側的接著層30。進而,該研磨墊2包括經由接著層30而積層的支持體40及積層於該支持體40的背面側的支持體接著層41。此外,對與第1實施方式相同的構成要素賦予相同的符號,且省略說明。
The
(基材膜) (Substrate film)
所述基材膜11是用以支持研磨層20的板狀構件。基材膜11沿著其研磨方向被分斷為區域X1、區域X2、區域X3及區域X4。
The base film 11 is a plate-shaped member for supporting the
基材膜11的材質、大小及平均厚度可與第1實施方式的基材膜10相同。
The material, size, and average thickness of the base film 11 may be the same as the
(支持體) (Support)
支持體40是用以支持基材膜11且將該研磨墊2固定於研磨裝置的板狀構件。
The
作為所述支持體40的材質可列舉:聚丙烯、聚乙烯、聚四氟乙烯、聚氯乙烯等具有熱塑性的樹脂或聚碳酸酯、聚醯胺、聚對苯二甲酸乙二酯等工程塑膠(engineering plastic)。藉由在所述支持體40中使用此種材質,所述支持體40具有可撓性,該研磨墊2追隨於被削體的表面形狀,研磨面與被削體變得容易接觸,因此研磨效率提高。
Examples of the material of the
作為所述支持體40的平均厚度例如可設為0.5mm以上
且2mm以下。在所述支持體40的平均厚度小於所述下限的情況下,有支持體40的強度不足之虞。另一方面,在所述支持體40的平均厚度超過所述上限的情況下,有難以將所述支持體40安裝於研磨裝置之虞或所述支持體40的可撓性不足之虞。
The average thickness of the
(支持體接著層) (Support layer)
支持體接著層41是用以將支持體40安裝於研磨裝置的層。
The
支持體接著層41的接著劑的種類及平均厚度可與接著層30相同。
The type and average thickness of the adhesive of the
<研磨墊的製造方法> <Manufacturing method of polishing pad>
該研磨墊2可藉由以下步驟而製造:準備研磨層用組成物的步驟;將研磨層用組成物印刷於基材膜11的表面側的步驟;將所述基材膜11固定於支持體40的步驟以及貼附支持體接著層41的步驟。
The
(研磨層用組成物準備步驟) (Preparation step of composition for polishing layer)
研磨層用組成物準備步驟與第1實施方式中的研磨層用組成物準備步驟相同,因此省略說明。 The procedure for preparing the composition for the polishing layer is the same as the procedure for preparing the composition for the polishing layer in the first embodiment, so the description is omitted.
(印刷步驟) (Printing steps)
其次,在印刷步驟中,使用所述研磨層用組成物準備步驟中所準備的塗敷液,將所述研磨層用組成物印刷於兩種區域。 Next, in the printing step, using the coating liquid prepared in the polishing layer composition preparation step, the polishing layer composition is printed on two types of regions.
具體而言,準備用於各區域的兩片基材膜11。準備與該基材膜11對應的遮罩,並經由該遮罩來印刷所述研磨層用組成物。此外,為了形成槽23,所述遮罩具有與槽23的形狀對應的形
狀。印刷方法可與第1實施方式相同。另外,在進行所述印刷時,藉由與第1實施方式同樣地使印刷次數或研磨層用組成物的組成不同,而將在兩片基材膜上所形成的研磨層20的基準高度的差以成為規定範圍內的方式調整。
Specifically, two base film 11 for each area are prepared. A mask corresponding to the base film 11 is prepared, and the composition for the polishing layer is printed through the mask. In addition, in order to form the
(基材膜貼附步驟) (Steps for attaching substrate film)
其次,在基材膜貼附步驟中,以與各區域的形狀吻合的方式將形成有研磨層20的所述基材膜11切斷,並分別經由接著層30而接著於支持體40。
Next, in the base film attaching step, the base film 11 on which the
(支持體接著層貼附步驟) (Procedure for attaching the support layer)
最後,在支持體接著層貼附步驟中,將支持體接著層41貼附於所述支持體40的背面,從而可獲得該研磨墊2。
Finally, in the step of attaching the support layer, the
<優點> <Advantages>
藉由該研磨墊2包括支持體40,該研磨墊2的操作變得容易。
Since the
[其他實施方式] [Other embodiments]
本發明並不限定於所述實施方式,除了所述實施方式以外,亦可以實施各種變更、改良而成的實施方式而實施。 The present invention is not limited to the above-mentioned embodiment, and in addition to the above-mentioned embodiment, various modifications and improvements can be implemented in the embodiment.
所述實施方式中,對研磨墊為圓盤狀的情況進行了說明,但研磨墊的形狀並不限定於圓盤狀。例如可將研磨墊製成方形狀。作為將研磨墊製成方形狀的情況下的大小並無特別限定,例如可製成一邊為140mm以上且160mm以下的正方形形狀。 In the above embodiment, the case where the polishing pad is in the shape of a disk has been described, but the shape of the polishing pad is not limited to the shape of a disk. For example, the polishing pad can be made into a square shape. The size of the polishing pad in a square shape is not particularly limited, and for example, a square shape having a side of 140 mm or more and 160 mm or less can be used.
所述實施方式中,以等間隔的格子狀來構成研磨部,但格子的間隔亦可不為等間隔,例如可於縱向與橫向上改變間隔。 然而,在研磨部的間隔不同的情況下,有研磨時產生各向異性之虞,因此較佳為等間隔。另外,研磨部的平面形狀亦可不為格子狀,例如亦可為四邊形以外的多邊形重覆的形狀、圓形形狀、具有多條平行線的形狀等。該些形狀可不規則地配設。 In the above-described embodiment, the polishing portions are formed in a grid pattern at equal intervals. However, the intervals between the grids may not be equal intervals. For example, the intervals may be changed in the longitudinal direction and the lateral direction. However, when the interval between the polishing sections is different, there is a possibility that anisotropy may occur during polishing, and therefore the interval is preferably equal. In addition, the planar shape of the polishing portion may not be a lattice shape, and may be, for example, a polygonal shape other than a quadrangular shape, a circular shape, or a shape having multiple parallel lines. These shapes can be arranged irregularly.
另外,在所述實施方式中,設為所述多個槽部的底面為基材膜的表面的構成,亦可槽部的深度小於研磨層的平均厚度而槽部並未到達基材的表面。該情況下,槽部的深度可為研磨層的平均厚度的50%以上。在槽部的深度小於所述下限的情況下,有因磨耗而使槽部消失之虞,且有研磨墊的耐久性差的情況。 In addition, in the above embodiment, the bottom surfaces of the plurality of grooves are configured as the surface of the base film, or the depth of the grooves may be smaller than the average thickness of the polishing layer and the grooves do not reach the surface of the base . In this case, the depth of the groove portion may be 50% or more of the average thickness of the polishing layer. When the depth of the groove is less than the lower limit, the groove may disappear due to wear, and the durability of the polishing pad may be poor.
所述研磨層可不具有槽。另外,所述研磨層可設為僅於區域間具有槽的構成。 The abrasive layer may not have grooves. In addition, the polishing layer may be configured to have grooves only between regions.
所述實施方式中,對包含由基準區域與低高度區域構成的兩種區域的研磨墊進行了說明,但平均高度不同的區域的數量並不限定於兩種,平均高度不同的區域的數量可為三種以上。 In the above embodiment, the polishing pad including two types of areas including the reference area and the low-height area has been described, but the number of areas with different average heights is not limited to two, and the number of areas with different average heights may be For more than three types.
另外,所述實施方式中,對沿著研磨方向交替地配設有多種區域的情況進行了說明,所述多種區域亦可不沿著研磨方向配設。另外,該配設亦可不為交替。 In addition, in the above embodiment, the case where a plurality of types of regions are alternately arranged along the polishing direction has been described, and the plurality of types of regions may not be arranged along the polishing direction. In addition, the arrangement may not be alternate.
所述實施方式中,對以區域的形式將研磨層進行4分割的情況進行了說明,但分割數量並不限定於4分割,亦可為2分割、3分割或5分割以上。 In the above-described embodiment, the case where the polishing layer is divided into four regions is described. However, the number of divisions is not limited to four divisions, and may be two divisions, three divisions, or more than five divisions.
另外,結果為多個區域以大致相等的角度間隔而配設的情況並非必需的構成要件,多個區域以不規則的間隔而配設的研 磨墊亦為本發明的目的。 In addition, as a result, it is not a necessary configuration element that a plurality of regions are arranged at substantially equal angular intervals, and a study of a plurality of regions arranged at irregular intervals The sanding pad is also the object of the present invention.
所述第1實施方式中,對研磨墊具有接著層的情況進行了說明,但接著層並非必需的構成要件,可省略。例如接著層可位於支持體側,另外,可使用螺絲緊固等其他固定手段而固定於支持體。 In the first embodiment described above, the case where the polishing pad has an adhesive layer has been described. However, the adhesive layer is not an essential component and may be omitted. For example, the adhesive layer may be located on the side of the support, and may be fixed to the support using other fixing means such as screw fastening.
另外,該研磨墊的用途並不限定於玻璃基板的研磨,例如亦可用於和玻璃基板同樣地要求高的平坦化精度與研磨速率不易降低的加工效率的難研磨材的研磨。此種難研磨材可列舉:藍寶石基板、GaN、SiC等化合物半導體基板等。 In addition, the use of the polishing pad is not limited to the polishing of a glass substrate. For example, it can also be used for polishing of difficult-to-grind materials that require high planarization accuracy and processing efficiency that does not easily reduce the polishing rate, as with glass substrates. Examples of such hard-to-grind materials include compound semiconductor substrates such as sapphire substrates, GaN, and SiC.
[實施例] [Example]
以下,列舉實施例及比較例更詳細地說明本發明,但本發明並不限定於以下實施例。 Hereinafter, the present invention will be described in more detail with examples and comparative examples, but the present invention is not limited to the following examples.
<玻璃基板的研削> <Grinding of glass substrates>
[比較例1] [Comparative Example 1]
在環氧樹脂(三菱化學股份有限公司的「JER1001」)中添加稀釋溶劑(異佛爾酮)、硬化劑(新日本理化股份有限公司的「Rikacid MH700」)、適量的硬化觸媒、及金剛石研磨粒(瀾德斯(Lands)公司的「LS系列」,平均粒徑14μm)進行混合,以金剛石研磨粒相對於研磨層的含量成為50質量%的方式進行製備而獲得塗敷液。 Adding diluent solvent (isophorone), hardener (``Rikacid MH700'' of Nippon Chemical & Chemical Co., Ltd.), appropriate amount of hardening catalyst, and diamond to epoxy resin (``JER1001'' of Mitsubishi Chemical Corporation) The abrasive grains (Lands' "LS series", average particle diameter 14 μm) were mixed, and were prepared so that the content of diamond abrasive grains with respect to the polishing layer became 50% by mass to obtain a coating liquid.
準備平均厚度75μm的PET膜(帝人杜邦薄膜(Teijin Dupont Films)股份有限公司的「Melinex S」)作為基材膜。該基 材膜為圓環狀,且外徑為290mm及內徑為103mm。 As a base film, a PET film with an average thickness of 75 μm (Teijin Dupont Films Co., Ltd. “Melinex S”) was prepared. The base The material film is ring-shaped and has an outer diameter of 290 mm and an inner diameter of 103 mm.
藉由印刷法而在所述基材膜的表面形成研磨層圖案。此外,藉由使用與研磨部對應的遮罩作為印刷的圖案,在研磨層形成由槽隔開的研磨部。研磨部是設為在俯視下一邊為1.5mm的正方形形狀,將槽部設為1.0mm的寬度,由此將研磨部相對於研磨層整體的面積佔有率設為36%。 An abrasive layer pattern is formed on the surface of the base film by a printing method. In addition, by using a mask corresponding to the polishing portion as a printed pattern, a polishing portion separated by grooves is formed in the polishing layer. The polishing portion has a square shape with a side of 1.5 mm in a plan view, and the groove portion has a width of 1.0 mm, thereby setting the area occupation ratio of the polishing portion to the entire polishing layer to 36%.
於溫度120℃下使所述印刷步驟後的研磨層圖案乾燥3分鐘以上,然後,於溫度120℃下使其硬化16小時以上且20小時以下。 The polishing layer pattern after the printing step is dried at a temperature of 120°C for 3 minutes or more, and then cured at a temperature of 120°C for 16 hours or more and 20 hours or less.
另外,使用平均厚度1mm的、俯視下呈圓形形狀的硬質氯乙烯樹脂板(他喜龍(Takiron)股份有限公司的「SP770」)作為固定於研磨裝置的支持體,利用平均厚度130μm的黏著材將所述基材膜的背面與所述支持體的表面貼合。作為所述黏著材是使用雙面膠帶(two-sided tape)(積水化學股份有限公司的「#5605HGD」)。以所述方式獲得比較例1的研磨墊。 In addition, a rigid vinyl chloride resin plate ("SP770" of Takiron Co., Ltd.) with an average thickness of 1 mm and a circular shape in plan view is used as a support fixed to the polishing device, and an adhesive material with an average thickness of 130 μm is used The back surface of the base film is bonded to the surface of the support. As the adhesive material, two-sided tape (Sekisui Chemical Co., Ltd. "#5605HGD") was used. The polishing pad of Comparative Example 1 was obtained in the manner described.
(實施例1) (Example 1)
首先,與比較例1同樣地準備形成有研磨層的第1基材膜。其次,使用塗敷液與比較例1同樣地準備形成有研磨層的第2基材膜,所述塗敷液是使用增加稀釋溶劑(異佛爾酮)的添加量且以金剛石研磨粒的相對於研磨層的含量成為42質量%的方式製備而成。由於對塗敷液進行了稀釋,故而該第2基材膜的研磨層的區域的平均高度亦小於第1基材膜的研磨層的平均高度。 First, in the same manner as in Comparative Example 1, the first base film on which the polishing layer is formed is prepared. Next, the second substrate film on which the polishing layer was formed was prepared in the same manner as in Comparative Example 1 by using a coating liquid that increased the amount of addition of the dilution solvent (isophorone) and used the relative amount of diamond abrasive grains. It was prepared so that the content of the polishing layer became 42% by mass. Since the coating liquid is diluted, the average height of the region of the polishing layer of the second base film is also smaller than the average height of the polishing layer of the first base film.
最後,將支持體劃分為藉由通過支持體的中心且正交的兩條直線而分割的4個區域,相對於所述4區域而沿著圓周方向(研磨方向)將兩種基材膜以與所述區域吻合的方式切斷,並交替貼合,由此獲得實施例1的研磨墊。實施例1的研磨墊的基準高度的差如表1所示般。 Finally, the support is divided into 4 areas divided by two straight lines passing through the center of the support and being orthogonal, with respect to the 4 areas, the two kinds of base film are divided in the circumferential direction (grinding direction) The polishing pad of Example 1 was obtained by cutting in such a manner as to match the area and alternately bonding. The difference in the reference height of the polishing pad of Example 1 is as shown in Table 1.
(實施例2、實施例3及比較例2) (Example 2, Example 3 and Comparative Example 2)
首先,與實施例1同樣地準備第1基材膜。其次,使用與實施例1的第1基材膜相同的塗敷液作為塗敷液,並較實施例1減少研磨層的印刷次數而準備第2基材膜。此外,關於第2基材膜的印刷次數,以實施例1為基準,實施例2為-2次,實施例3為-3次,及比較例2為-4次。 First, the first base film was prepared in the same manner as in Example 1. Next, the same coating liquid as the first base film of Example 1 was used as the coating liquid, and the number of printing of the polishing layer was reduced compared to Example 1 to prepare a second base film. In addition, regarding the printing frequency of the second base film, based on Example 1, Example 2 is -2 times, Example 3 is -3 times, and Comparative Example 2 is -4 times.
使用所準備的第1基材膜及第2基材膜,與實施例1同樣地獲得實施例2、實施例3及比較例2的研磨墊。實施例2、實施例3及比較例2的研磨墊的基準高度的差如表1所示般。 Using the prepared first base film and second base film, the polishing pads of Example 2, Example 3, and Comparative Example 2 were obtained in the same manner as Example 1. The difference in the reference height of the polishing pads in Example 2, Example 3, and Comparative Example 2 is as shown in Table 1.
(實施例4) (Example 4)
藉由通過支持體的中心的直線將支持體劃分為相等面積的8個區域。相對於所述8區域而沿著圓周方向將兩種基材膜以與所述區域吻合的方式切斷,並交替貼合,除此以外,與實施例3同樣地獲得實施例4的研磨墊。實施例4的研磨墊的基準高度的差如表1所示般。 The support is divided into 8 areas of equal area by a straight line passing through the center of the support. The polishing pad of Example 4 was obtained in the same manner as in Example 3 except that the two types of base films were cut along the circumferential direction with respect to the 8 area so as to match the area and alternately bonded. . The difference in the reference height of the polishing pad of Example 4 is as shown in Table 1.
[研磨條件] [Grinding conditions]
使用所述實施例1~實施例4及比較例1、比較例2中所獲得 的研磨墊,進行玻璃基板的研磨。所述玻璃基板是使用直徑6.25cm、比重2.4的鈉鈣玻璃(平岡特殊硝子製作股份有限公司製造)。所述研磨是使用市售的雙面研磨機(日本英格斯(Engis Japan)股份有限公司的「EJD-5B-3W」)。雙面研磨機的載體(carrier)是厚度0.6mm的環氧玻璃。研磨是將研磨壓力設為150g/cm2,在上壓盤轉數60rpm、下壓盤轉數90rpm及太陽齒輪轉數30rpm的條件下以15分鐘進行6次。此時,作為冷卻劑(coolant)是將莫萊斯柯(Moresco)股份有限公司的「Toolmate GR-20」每分鐘供給120cc。 Using the polishing pads obtained in Examples 1 to 4 and Comparative Examples 1 and 2, the glass substrate was polished. As the glass substrate, soda lime glass (Hiraoka Special Glass Manufacturing Co., Ltd.) having a diameter of 6.25 cm and a specific gravity of 2.4 was used. For the grinding, a commercially available double-sided grinding machine ("EJD-5B-3W" of Engis Japan Co., Ltd.) was used. The carrier of the double-sided grinding machine is epoxy glass with a thickness of 0.6 mm. The polishing was performed by setting the polishing pressure to 150 g/cm 2 and performing 6 times in 15 minutes under the conditions of 60 rpm of the upper platen rotation, 90 rpm of the lower platen rotation, and 30 rpm of the sun gear rotation. At this time, as a coolant, Moresco Co., Ltd.'s "Toolmate GR-20" was supplied at 120 cc per minute.
[評價方法] [Evaluation method]
對使用實施例1~實施例4及比較例1、比較例2的研磨墊進行了研磨的玻璃基板,求出研磨速率與研磨後的被削體的精加工粗糙度。將結果示於表1。 For the glass substrates polished using the polishing pads of Examples 1 to 4 and Comparative Example 1 and Comparative Example 2, the polishing rate and the finishing roughness of the workpiece after polishing were determined. The results are shown in Table 1.
(研磨速率) (Grinding rate)
關於研磨速率,將每次研磨中研磨前後的基板的重量變化(g)除以基板的表面積(μm2)、基板的比重(g/μm3)及研磨時間(分鐘)而算出。 The polishing rate was calculated by dividing the weight change (g) of the substrate before and after polishing in each polishing by the surface area of the substrate (μm 2 ), the specific gravity of the substrate (g/μm 3 ), and the polishing time (minutes).
(精加工粗糙度) (Finishing roughness)
關於實施例1~實施例4及比較例1、比較例2的精加工粗糙度,使用接觸式表面粗糙度計(三豐(Mitutoyo)股份有限公司的「S-3000」),對表面及背面分別任意的3個部位進行測定,求出合計6個部位的平均值。 For the finishing roughness of Examples 1 to 4 and Comparative Example 1 and Comparative Example 2, a contact surface roughness meter ("S-3000" of Mitutoyo Co., Ltd.) was used to measure the surface and back The measurement was performed at three arbitrary positions, and the average value of the six positions was calculated.
於表1中,基準高度的差「-」是指由於只有一個區域,故而不定義。另外,根據比較例2的研磨中,產生基板的缺邊及破裂的不良,且無法進行研磨速率的測定。 In Table 1, the difference of the reference height "-" means that there is only one area, so it is not defined. In addition, according to the polishing of Comparative Example 2, defects such as chipping and cracking of the substrate occurred, and the polishing rate could not be measured.
根據表1,實施例1~實施例4的研磨墊與比較例1、比較例2的研磨墊相比,在玻璃基板的研磨中,精加工粗糙度低且研磨速率的降低小。相對於此,認為比較例1的研磨墊由於不存在平均高度不同的區域,故而於第4次以後的研磨中產生研磨速率的降低。另外,認為比較例2的研磨墊由於基準高度的差為100μm以上的105μm,且運轉阻力過大,故而產生了玻璃基板的缺邊或破裂。 According to Table 1, compared to the polishing pads of Comparative Examples 1 and 2, the polishing pads of Examples 1 to 4 have a low finish roughness and a small decrease in polishing rate during polishing of the glass substrate. In contrast to this, it is considered that the polishing pad of Comparative Example 1 does not have regions having different average heights, and therefore, the polishing rate decreases during the fourth and subsequent polishings. In addition, it is considered that the polishing pad of Comparative Example 2 has a difference in reference height of 100 μm or more and 105 μm, and the running resistance is excessively large, so that the glass substrate is chipped or broken.
根據以上的玻璃基板的研磨的結果,具有研磨層的平均高度不同的多種區域,且鄰接的一對所述區域的基準高度的差為規定範圍內的實施例1~實施例4的研磨墊具有高的平坦化精 度,且在比較長的期間內研磨速率不易降低。 According to the results of the above-mentioned polishing of the glass substrate, there are various regions having different average heights of the polishing layer, and the difference between the reference heights of the adjacent pair of the regions is within a predetermined range. The polishing pads of Examples 1 to 4 have High leveling Degree, and the polishing rate is not easy to decrease in a relatively long period.
[產業上之可利用性] [Industry availability]
本發明的研磨墊具有高的平坦化精度,且在比較長的期間內研磨速率不易降低。因此,該研磨墊可較佳地用於以玻璃基板為代表的平面基板的單面或兩面研磨。 The polishing pad of the present invention has high planarization accuracy, and the polishing rate is not likely to decrease over a relatively long period of time. Therefore, the polishing pad can be preferably used for polishing one or both sides of a planar substrate represented by a glass substrate.
1:研磨墊 1: Grinding pad
10:基材膜 10: substrate film
20:研磨層 20: Grinding layer
21:研磨粒 21: abrasive grain
22:黏合劑 22: Adhesive
23:槽 23: slot
24:研磨部 24: Grinding Department
30:接著層 30: then layer
X1、X2:區域 X1, X2: area
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- 2016-04-14 KR KR1020177035077A patent/KR102045370B1/en active IP Right Grant
- 2016-04-14 WO PCT/JP2016/062015 patent/WO2016181751A1/en active Application Filing
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CN102601747A (en) * | 2011-01-20 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | Grinding pad as well as producing method and using method therefor |
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KR102045370B1 (en) | 2019-11-15 |
TW201639664A (en) | 2016-11-16 |
KR20180004765A (en) | 2018-01-12 |
CN107614202A (en) | 2018-01-19 |
CN107614202B (en) | 2019-12-03 |
WO2016181751A1 (en) | 2016-11-17 |
JPWO2016181751A1 (en) | 2017-05-25 |
JP6046865B1 (en) | 2016-12-21 |
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