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TWI753032B - Photomask, method of manufacturing a photomask for proximity exposure, and method of manufacturing a display device - Google Patents

Photomask, method of manufacturing a photomask for proximity exposure, and method of manufacturing a display device Download PDF

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Publication number
TWI753032B
TWI753032B TW106135837A TW106135837A TWI753032B TW I753032 B TWI753032 B TW I753032B TW 106135837 A TW106135837 A TW 106135837A TW 106135837 A TW106135837 A TW 106135837A TW I753032 B TWI753032 B TW I753032B
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TW
Taiwan
Prior art keywords
pattern
photomask
transmission control
film
control film
Prior art date
Application number
TW106135837A
Other languages
Chinese (zh)
Other versions
TW201833659A (en
Inventor
小林周平
Original Assignee
日商Ｈｏｙａ股份有限公司
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Publication date
Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW201833659A publication Critical patent/TW201833659A/en
Application granted granted Critical
Publication of TWI753032B publication Critical patent/TWI753032B/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

To inhibit rounding of a corner portion of a transferred image, which tends to occur when a transfer pattern of a photomask is miniaturized and increased in density. A photomask for proximity exposure according to this invention has a transfer pattern formed on a transparent substrate and adapted to be transferred onto an object. The transfer pattern includes a main pattern and an auxiliary pattern disposed near a corner portion of the main pattern and spaced from the main pattern. The main pattern is made of a first transmission control film formed on the transparent substrate. The auxiliary pattern is made of a second transmission control film formed on the transparent substrate and has a size which is not resolved on the object by exposure.

Description

光罩、近接曝光用光罩之製造方法及顯示裝置之製造方法Photomask, method for producing photomask for proximity exposure, and method for producing display device

本發明係關於一種用以製造電子元件之光罩，尤其係關於一種用於平板顯示器(FPD，flat panel display)之製造之較佳之光罩、近接曝光用光罩之製造方法及顯示裝置之製造方法。The present invention relates to a photomask for manufacturing electronic components, and more particularly, to a preferable photomask for the manufacture of flat panel displays (FPD, flat panel display), a method for manufacturing a photomask for proximity exposure, and the manufacture of a display device method.

於專利文獻1中，記載有將構成液晶顯示裝置(以下，亦稱為「LCD(Liquid Crystal Display)」)之彩色濾光片之圖案藉由使用有光罩之近接曝光而曝光時，與光罩之遮光部之角部對應之圖案角部不帶弧度之光罩。即，於專利文獻1中，記載有於使用負型光阻且藉由近接曝光而形成構成彩色濾光片之圖案時所使用之光罩中，使多角形之修正遮光圖案與上述光罩之遮光部之角部之頂點相接而設置。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2008-76724號公報In Patent Document 1, it is described that when a pattern of a color filter constituting a liquid crystal display device (hereinafter, also referred to as "LCD (Liquid Crystal Display)") is exposed by proximity exposure using a mask, it is different from light. The corners of the pattern corresponding to the corners of the shading portion of the mask shall not have a curved mask. That is, in Patent Document 1, in a photomask used when a negative photoresist is used and a pattern constituting a color filter is formed by proximity exposure, it is described that a polygonal correction light-shielding pattern and the above-described photomask are formed. The vertices of the corners of the light shielding portion are arranged to be in contact with each other. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2008-76724

[發明所欲解決之問題] 近年來，於包含液晶顯示裝置或有機EL顯示器之顯示器業界，以移動終端為源頭之顯示元件之高精細化正在急速發展。又，為使顯示器之畫質或顯示性能提昇，LCD之像素數、或像素密度之增加傾向顯著。 圖1係表示既有之彩色濾光片(以下，亦稱為「CF(Color Filter)」)之圖案之一例之模式圖。於此處所示之圖案中，於1個像素1中排列有彼此呈相同形狀之3個子像素2。3個子像素2分別對應於R(紅)、G(綠)、B(藍)之濾色器。子像素2以固定之間距規律地排列。各子像素2形成為長方形。又，各子像素2藉由複數個較細之黑矩陣(以下，亦稱為「BM(Black Matrix)」)3而劃分。複數個黑矩陣3相互交叉而形成為格子狀。又，藉由將具有上述3色量之子像素2之1個像素1以固定之間距規律地排列而形成重複圖案。 用以製造此種CF之具備轉印用圖案之光罩為響應市場之需求而使CF之設計微細化，必須使圖案微細化。然而，若僅單純地縮小光罩所具備之轉印用圖案之尺寸，會產生以下之不良。 於CF之製造中，常採用將光罩所具有之轉印用圖案藉由近接曝光方式之曝光裝置而於負型感光材料上曝光之方法。 此處，將用以製造圖1所示之既有之CF中使用之BM3之光罩圖案4例示於圖2(a)。而且，將為了製造更加高精細之BM3而使上述圖案4微細化後之圖案5示於圖2(b)。此種圖案之微細化例如於將300 ppi(pixel-per-inch，每英吋像素數)左右之CF改變為超過400 ppi之更加微細之規格之狀況下成為必要。 於使用具備圖2(b)之圖案5之光罩將BM圖案轉印而製造CF之情形時，較為理想的是獲得圖3(a)所示之CF之圖案6。然而，實際上，難以轉印此種圖案之情形並不少。即，若藉由實際轉印之BM而製造CF，則產生如下課題：如圖3(b)之圖案7般，子像素之各個角部帶弧度等圖案形狀變化之傾向變得顯著，並且BM之寬度無法充分地微細化。其原因在於，於近接曝光時，藉由光罩與被轉印體之間隙(即近接間隙)中產生之繞射光而形成複雜之光強度分佈，形成於被轉印體上之轉印像不會成為如實地再現遮罩圖案者。 於該情形時，尤其應注意之點為，子像素(此處為長方形)之角部帶弧度等形狀劣化(參照圖3(b)之A部)，BM之寬度亦無法充分地微細化(參照圖3(a)之B部與圖3(b)之C部)，故認為有子像素之開口面積變小，CF之開口率減少之傾向。該傾向之結果會導致LCD等之畫面之亮度降低、或使功耗增大之不良。 另一方面，為了控制成為上述問題之原因之近接間隙之繞射光，考慮使近接間隙充分地狹窄、或根本性地變更光學條件(曝光光源波長等)。然而，若考慮CF製造之生產效率、成本效率，則設為某程度之大型光罩(一邊之大小為300 mm以上，較佳為400 mm以上之四邊形)為有利的。而且，為了保持該程度之尺寸之光罩以用於近接曝光，作為近接間隙，於穩定生產方面，確保30 μm以上、較佳為40 μm較為理想。又，與投影曝光方式相比較，近接曝光方式之較大優點為生產成本低，但有光學條件等裝置構成之變更會損及該優點之顧慮。 根據以上所述，本發明者關注到，為了消除為獲得高精細之顯示功能而僅單純地縮小光罩之圖案從而如上所述使轉印像劣化之上述問題，有益的是，提出能夠抑制角部之弧度，且能夠維持或增加CF之開口面積之光罩之轉印用圖案。 又，本發明者確認後之結果為，即便採用上述專利文獻1中記載之使修正遮光圖案與遮光部之角部相接而設置之圖案，亦無法獲得充分之效果。 本發明之目的在於提供一種可抑制使光罩之轉印用圖案微細化、高密度化時易產生之轉印像之角部之變圓的光罩、近接曝光用光罩之製造方法及顯示裝置之製造方法。 [解決問題之技術手段] (第1態樣) 本發明之第1態樣係一種光罩，其特徵在於： 其係於透明基板上具備用以轉印至被轉印體上之轉印用圖案之近接曝光用光罩， 上述轉印用圖案包含： 複數個主圖案，其等規律地排列；及 輔助圖案，其於上述主圖案各自所具有之角部之附近，與上述主圖案相離而配置；且 上述主圖案於上述透明基板上形成第1透過控制膜， 上述輔助圖案於上述透明基板上形成第2透過控制膜，並且具有不會藉由曝光而於上述被轉印體上解像之尺寸。 (第2態樣) 本發明之第2態樣係一種光罩，其特徵在於： 其係於透明基板上具備用以轉印至被轉印體上之轉印用圖案之近接曝光用光罩， 上述轉印用圖案包含將單位圖案規律地重複排列之重複圖案， 上述單位圖案包含： 主圖案； 輔助圖案，其於上述主圖案所具有之角部之附近，與上述主圖案相離而配置；及 狹縫部，其包圍上述主圖案及上述輔助圖案；且 上述主圖案於上述透明基板上形成第1透過控制膜， 上述輔助圖案於上述透明基板上形成第2透過控制膜，並且具有不會藉由曝光而於上述被轉印體上解像之尺寸。 (第3態樣) 本發明之第3態樣如上述第1或2態樣之光罩，其中 上述輔助圖案具有點形狀或線形狀，且針對每1個上述主圖案而配置複數個。 (第4態樣) 本發明之第4態樣如上述第1至3態樣中任一態樣之光罩，其中 上述主圖案具有被相互平行之一對直線夾著之帶狀之區域。 (第5態樣) 本發明之第5態樣如上述第2至4態樣中任一態樣之光罩，其中 上述狹縫部具有帶狀之第1狹縫部，其有寬度S1(μm)，並於一方向延伸；及 第2狹縫部，其具有寬度S2(μm)，並與上述第1狹縫部交叉；且 於上述第1狹縫部與上述第2狹縫部交叉之區域，於將以直線連結4個上述主圖案之相對向之4個角部之頂點而形成之四邊形設為交叉區域時， 以使上述輔助圖案之重心位於上述交叉區域內之方式而配置上述輔助圖案。 (第6態樣) 本發明之第6態樣如上述第2至4態樣中任一態樣之光罩，其中 上述狹縫部具有：帶狀之第1狹縫部，其具有寬度S1(μm)，並於一方向延伸；及第2狹縫部，其具有寬度S2(μm)，並與上述第1狹縫部交叉；且 於上述第1狹縫部與上述第2狹縫部交叉之區域，於將以直線連結4個上述主圖案之相對向之4個角部之頂點而形成之四邊形設為交叉區域時， 以使上述輔助圖案包含於上述交叉區域內之方式而配置上述輔助圖案。 (第7態樣) 本發明之第7態樣如上述第1至6態樣中任一態樣之光罩，其中 上述第1透過控制膜係對用於上述光罩之曝光之曝光之光實質上進行遮光之遮光膜。 (第8態樣) 本發明之第8態樣如上述第1至7態樣中任一態樣之光罩，其中 上述第1透過控制膜係包含與上述第2透過控制膜相同之材料之膜。 (第9態樣) 本發明之第9態樣如上述第1至7態樣中任一態樣之光罩，其中 上述第2透過控制膜相對於用於上述光罩之曝光之曝光之光之代表波長光具有透過率T2(%)，0≦T2≦60。 (第10態樣) 本發明之第10態樣如上述第1至9態樣中任一態樣之光罩，其中 上述第1透過控制膜係於上述第2透過控制膜上積層有第3透過控制膜者。 (第11態樣) 本發明之第11態樣係一種近接曝光用光罩之製造方法，該近接曝光用光罩係於透明基板上具備用以轉印至被轉印體上之轉印用圖案， 上述轉印用圖案包含： 複數個主圖案，其等規律地排列； 輔助圖案，其係於上述主圖案各自之附近，與上述主圖案相離而配置者，並且具有不會藉由曝光而於上述被轉印體上解像之尺寸；及 狹縫部，其包圍上述主圖案及上述輔助圖案；該近接曝光用光罩之製造方法包含以下步驟： 準備於上述透明基板上形成有第2透過控制膜、第3透過控制膜、及抗蝕膜之光罩基底； 對上述抗蝕膜進行繪圖與顯影，形成具有複數種類之殘膜厚度之抗蝕圖案； 將上述抗蝕圖案作為遮罩，對上述第3透過控制膜及第2透過控制膜依序進行蝕刻； 將上述抗蝕圖案減膜特定之厚度量；及 將減膜後之抗蝕圖案作為遮罩，對新露出之上述第3透過控制膜進行蝕刻。 (第12態樣) 本發明之第12態樣係一種近接曝光用光罩之製造方法，該近接曝光用光罩係於透明基板上具備用以轉印至被轉印體上之轉印用圖案， 上述轉印用圖案包含： 主圖案； 輔助圖案，其係於上述主圖案之附近，與上述主圖案相離而配置者，並且具有不會藉由曝光而於上述被轉印體上解像之尺寸；及 狹縫部，其包圍上述主圖案及上述輔助圖案；該近接曝光用光罩之製造方法包含以下步驟： 準備於上述透明基板上形成有第2透過控制膜、蝕刻阻止膜、第3透過控制膜、及抗蝕膜之光罩基底； 對上述抗蝕膜進行繪圖與顯影，形成具有複數種類之殘膜厚度之抗蝕圖案； 將上述抗蝕圖案作為遮罩，對上述第3透過控制膜、上述蝕刻阻止膜、及上述第2透過控制膜依序進行蝕刻； 將上述抗蝕圖案減膜特定之厚度量；及 將減膜後之抗蝕圖案作為遮罩，對新露出之上述第3透過控制膜進行蝕刻。 (第13態樣) 本發明之第13態樣係一種顯示裝置之製造方法，其包含以下步驟： 準備如上述第1至10態樣中任一態樣之光罩；及 使用近接曝光方式之曝光裝置，將上述轉印用圖案進行曝光，且轉印至被轉印體上。 [發明之效果] 根據本發明，可抑制於使光罩之轉印用圖案微細化、高密度化時易產生之轉印像之角部之變圓。又，若使用本發明之光罩而製造液晶顯示裝置，則可獲得畫面之亮度、或功耗之節減之優點。[Problems to be Solved by the Invention] In recent years, in the display industry including liquid crystal display devices and organic EL displays, high-definition display elements originating from mobile terminals are rapidly advancing. In addition, in order to improve the image quality or display performance of the display, the number of pixels or the pixel density of the LCD tends to increase remarkably. FIG. 1 is a schematic diagram showing an example of a pattern of a conventional color filter (hereinafter, also referred to as "CF (Color Filter)"). In the pattern shown here, three sub-pixels 2 having the same shape as each other are arranged in one pixel 1. The three sub-pixels 2 correspond to the filters of R (red), G (green), and B (blue), respectively. shader. The sub-pixels 2 are regularly arranged with a fixed pitch. Each sub-pixel 2 is formed in a rectangular shape. In addition, each sub-pixel 2 is divided by a plurality of thin black matrices (hereinafter, also referred to as “BM (Black Matrix)”) 3 . A plurality of black matrices 3 intersect each other and are formed in a lattice shape. In addition, a repeating pattern is formed by regularly arranging one pixel 1 of the sub-pixels 2 having the above-mentioned three color quantities at a constant pitch. In order to miniaturize the design of the CF in response to market demands, the photomask with a pattern for transfer used to manufacture such a CF must be miniaturized. However, simply reducing the size of the transfer pattern included in the photomask will cause the following defects. In the manufacture of CF, a method of exposing the transfer pattern of the photomask to the negative-type photosensitive material by the exposure device of the proximity exposure method is often used. Here, the mask pattern 4 for producing the BM3 used in the existing CF shown in FIG. 1 is illustrated in FIG. 2( a ). In addition, the pattern 5 obtained by making the above-mentioned pattern 4 finer in order to manufacture a higher-definition BM3 is shown in FIG. 2( b ). The miniaturization of such a pattern becomes necessary when, for example, the CF of about 300 ppi (pixel-per-inch, the number of pixels per inch) is changed to a finer specification exceeding 400 ppi. When the BM pattern is transferred using the photomask having the pattern 5 of FIG. 2( b ) to manufacture CF, it is desirable to obtain the pattern 6 of the CF shown in FIG. 3( a ). In practice, however, there are not many cases where it is difficult to transfer such a pattern. That is, if the CF is produced by actually transferring the BM, the following problems arise: the tendency of the pattern shape to change, such as the curvature of the corners of the sub-pixels, becomes conspicuous, as in the pattern 7 in FIG. 3(b), and the BM The width cannot be sufficiently miniaturized. The reason for this is that, during close exposure, a complex light intensity distribution is formed by diffracted light generated in the gap between the photomask and the transfer object (ie, the proximity gap), and the transfer image formed on the transfer object is not You will be the one who faithfully reproduces the mask pattern. In this case, it should be noted that the shape of the corners of the sub-pixels (here, rectangles) is degraded (refer to part A of FIG. 3(b)), and the width of the BM cannot be sufficiently fine Referring to part B of FIG. 3( a ) and part C of FIG. 3( b ), it is considered that the aperture area of the sub-pixel becomes smaller and the aperture ratio of the CF tends to decrease. As a result of this tendency, the brightness of an LCD screen or the like is lowered, or the power consumption is increased. On the other hand, in order to control the diffracted light in the proximity gap, which is the cause of the above-mentioned problems, it is considered that the proximity gap is sufficiently narrowed or the optical conditions (exposure light source wavelength, etc.) are fundamentally changed. However, in consideration of the production efficiency and cost efficiency of CF manufacturing, it is advantageous to use a certain large-sized mask (a quadrilateral with a size of one side of 300 mm or more, preferably 400 mm or more). Furthermore, in order to maintain a photomask of such a size for close exposure, it is desirable to ensure that the proximity gap is 30 μm or more, preferably 40 μm, in terms of stable production. In addition, compared with the projection exposure method, the proximity exposure method has a great advantage of low production cost, but there is a concern that the change of the device configuration such as optical conditions will damage this advantage. In view of the above, the inventors of the present invention have noticed that in order to eliminate the above-mentioned problem of deteriorating the transfer image by simply reducing the pattern of the photomask to obtain a high-definition display function, it is advantageous to propose that the angle of The radian of the part, and can maintain or increase the opening area of the CF mask for the transfer pattern. In addition, as a result of confirmation by the present inventors, even if the correction light-shielding pattern described in the above-mentioned Patent Document 1 is used and provided in contact with the corners of the light-shielding portion, sufficient effects cannot be obtained. An object of the present invention is to provide a photomask capable of suppressing rounding of the corners of a transfer image that is likely to occur at the time of miniaturization of a photomask transfer pattern and densification, a method for producing a photomask for proximity exposure, and a display Method of manufacturing the device. [Technical Means for Solving the Problems] (First Aspect) A first aspect of the present invention is a photomask, characterized in that: it is provided on a transparent substrate with a transfer for transferring onto a transfer target body A photomask for proximity exposure of a pattern, wherein the pattern for transfer includes: a plurality of main patterns, which are regularly arranged; and auxiliary patterns, which are separated from the main pattern in the vicinity of the corners each of the main patterns has. The main pattern is formed on the transparent substrate with a first transmission control film, and the auxiliary pattern is formed on the transparent substrate with a second transmission control film so as not to be decomposed on the transfer target body by exposure. image size. (Second Aspect) A second aspect of the present invention is a photomask, characterized in that it is a photomask for proximity exposure provided on a transparent substrate with a pattern for transfer to be transferred onto a body to be transferred , the pattern for transfer includes a repeating pattern in which the unit patterns are regularly and repeatedly arranged, and the unit pattern includes: a main pattern; an auxiliary pattern, which is arranged in the vicinity of the corners of the main pattern and separated from the main pattern and a slit portion, which surrounds the main pattern and the auxiliary pattern; and the main pattern forms a first transmission control film on the transparent substrate, the auxiliary pattern forms a second transmission control film on the transparent substrate, and has a The size to be resolved on the above-mentioned transferred body by exposure. (Third aspect) A third aspect of the present invention is the photomask of the first or second aspect, wherein the auxiliary pattern has a dot shape or a line shape, and a plurality of the auxiliary patterns are arranged for every one of the main patterns. (Fourth Aspect) A fourth aspect of the present invention is the photomask of any one of the first to third aspects, wherein the main pattern has a band-shaped region sandwiched by a pair of straight lines parallel to each other. (Fifth aspect) A fifth aspect of the present invention is the photomask of any one of the above-mentioned second to fourth aspects, wherein the slit portion has a strip-shaped first slit portion having a width S1 (μm) , and extend in one direction; and a second slit portion, which has a width S2 (μm), and intersects with the first slit portion; and in the area where the first slit portion and the second slit portion intersect, will be When a quadrilateral formed by connecting the vertices of the four opposing corners of the four main patterns with a straight line is used as an intersection area, the auxiliary patterns are arranged so that the center of gravity of the auxiliary patterns is located in the intersection area. (Sixth Aspect) A sixth aspect of the present invention is the photomask of any one of the above-mentioned second to fourth aspects, wherein the slit portion has: a strip-shaped first slit portion having a width S1 (μm ), and extend in one direction; and a second slit portion, which has a width S2 (μm), and intersects with the first slit portion; and in the area where the first slit portion and the second slit portion intersect, in the When a quadrilateral formed by connecting the vertices of the four opposing corners of the four main patterns with a straight line is used as an intersection area, the auxiliary patterns are arranged so that the auxiliary patterns are included in the intersection area. (Seventh Aspect) A seventh aspect of the present invention is the photomask of any one of the first to sixth aspects, wherein the first transmission control film is an exposure light used for exposing the photomask. A light-shielding film that substantially shields light. (Eighth aspect) An eighth aspect of the present invention is the photomask of any one of the first to seventh aspects, wherein the first transmission control film is made of the same material as the second transmission control film. membrane. (Ninth Aspect) A ninth aspect of the present invention is the photomask according to any one of the first to seventh aspects, wherein the second transmission control film corresponds to the exposure light used for the exposure of the photomask. The representative wavelength light has a transmittance T2 (%), 0≦T2≦60. (Tenth Aspect) A tenth aspect of the present invention is the photomask of any one of the first to ninth aspects, wherein the first transmission control film is laminated on the second transmission control film and has a third through the control membrane. (Eleventh Aspect) An eleventh aspect of the present invention is a method for producing a photomask for proximity exposure, which is provided with a photomask for transferring on a transparent substrate for transferring onto a body to be transferred. pattern, the above-mentioned pattern for transfer includes: a plurality of main patterns, which are regularly arranged; auxiliary patterns, which are located in the vicinity of each of the above-mentioned main patterns, are arranged apart from the above-mentioned main patterns, and have and the size of the image to be resolved on the transfer object; and a slit portion that surrounds the main pattern and the auxiliary pattern; the manufacturing method of the photomask for proximity exposure includes the following steps: preparing to form a second transparent substrate on the transparent substrate The photomask base of the transmission control film, the third transmission control film, and the resist film; Drawing and developing the above-mentioned resist film to form a resist pattern with a plurality of types of residual film thicknesses; Using the above-mentioned resist pattern as a mask , the above-mentioned third transmission control film and the second transmission control film are sequentially etched; the above-mentioned resist pattern is reduced by a specific thickness of the film; and the resist pattern after the film reduction is used as a mask, and the newly exposed 3 Etching through the control film. (Twelfth Aspect) A twelfth aspect of the present invention is a method for producing a photomask for proximity exposure, the photomask for proximity exposure including, on a transparent substrate, a transfer mask for transferring onto a transfer target body A pattern, and the above-mentioned pattern for transfer includes: a main pattern; an auxiliary pattern, which is arranged in the vicinity of the main pattern, is arranged away from the main pattern, and has a function that does not dissolve on the transfer object by exposure to light. the size of the image; and the slit portion surrounding the main pattern and the auxiliary pattern; the method of manufacturing the photomask for proximity exposure includes the following steps: preparing to form on the transparent substrate a second transmission control film, an etching stopper film, a 3. Passing through the control film and the photomask substrate of the resist film; Drawing and developing the resist film to form a resist pattern with a plurality of types of residual film thicknesses; Using the resist pattern as a mask, the third The transmission control film, the etching stopper film, and the second transmission control film are sequentially etched; the resist pattern is reduced by a specified thickness; The above-mentioned third transmission control film is etched. (Thirteenth Aspect) A thirteenth aspect of the present invention is a method for manufacturing a display device, comprising the steps of: preparing a photomask as in any one of the above-mentioned aspects 1 to 10; and using a proximity exposure method The exposure device exposes the above-mentioned pattern for transfer and transfers it to a transfer target body. [Effects of the Invention] According to the present invention, it is possible to suppress rounding of the corners of the transfer image that is likely to occur when the pattern for transfer of a photomask is made finer and denser. In addition, if a liquid crystal display device is manufactured using the photomask of the present invention, the advantages of the brightness of the screen or the reduction of power consumption can be obtained.

＜光罩之構成＞ 本發明之光罩之特徵在於： 其係於透明基板上具備用以轉印至被轉印體上之轉印用圖案之近接曝光用光罩， 上述轉印用圖案包含： 複數個主圖案，其等規律地排列；及 輔助圖案，其於上述主圖案各自所具有之角部之附近，與上述主圖案相離而配置；且 上述主圖案於上述透明基板上形成第1透過控制膜， 上述輔助圖案於上述透明基板上形成第2透過控制膜，並且具有不會藉由曝光而於上述被轉印體上解像之尺寸。 上述本發明之較佳之一例為一種光罩，其特徵在於： 其係於透明基板上具備用以轉印至被轉印體上之轉印用圖案之近接曝光用光罩， 上述轉印用圖案包含將單位圖案規律地重複排列之重複圖案， 上述單位圖案包含： 主圖案； 輔助圖案，其於上述主圖案所具有之角部之附近，與上述主圖案相離而配置；及 狹縫部，其包圍上述主圖案及上述輔助圖案；且 上述主圖案於上述透明基板上形成第1透過控制膜， 上述輔助圖案於上述透明基板上形成第2透過控制膜，並且具有不會藉由曝光而於上述被轉印體上解像之尺寸。 此處所謂「曝光」係指將光罩所具備之轉印用圖案藉由曝光裝置進行曝光，可藉由該曝光而於被轉印體(CF基板等)上形成光學像，且可藉由顯影而於被轉印體上之抗蝕膜上形成圖案。 圖4係表示本發明之實施形態之光罩所具備之轉印用圖案之一例之俯視圖。 本發明之實施形態之光罩係近接曝光用光罩，其於構成光罩之透明基板上形成轉印用圖案。 轉印用圖案係藉由近接曝光而用以轉印至被轉印體之圖案，且包含主圖案11、輔助圖案12、及狹縫部13。此處例示之轉印用圖案係CF之BM形成用之圖案。但是，圖式為模式圖，各部分之尺寸比等並不限於與實際之圖案設計相同。 構成光罩之透明基板可將使用石英玻璃等透明材料者精密地研磨而使用。透明基板之大小或厚度並無限制，但作為用於顯示裝置之製造之光罩用之透明基板，較佳為具有一邊為300 mm～1800 mm之四邊形之主面、且厚度為5～16 mm左右者。再者，下述光罩之各部分之透光率表示將透明基板之透光率設為100%時之值。 轉印用圖案較佳為包含將單位圖案規律地重複排列之重複圖案。於該情形時，重複之數量為2以上。較佳為，單位圖案之規律的重複排列係以固定之間距排列者。於圖4中，例示有以特定之間距將單位圖案規律地重複排列之重複圖案。 圖4中例示之轉印用圖案係於X方向以P1(μm)之間距、於Y方向以P2(μm)之間距排列有複數個單位圖案14。各個單位圖案14係與CF之各子像素對應者。於以下之說明中，將子像素單位之單位圖案14亦稱為「SP單位圖案14」。SP單位圖案14之X方向之間距P1可設為15～30 μm，Y方向之間距P2可設為40～100 μm。 又，圖4所示之轉印用圖案之設計亦成為將像素單位之單位圖案(以下，亦稱為「P單位圖案」)15規律地排列而成之重複圖案。P單位圖案15較SP單位圖案14之圖案區域大，1個P單位圖案15中包含3個SP單位圖案14。於以下之說明中，將「SP單位圖案14」僅記述為「單位圖案14」進行說明。 於單位圖案14中，包含主圖案11、輔助圖案12、及包圍該等之狹縫部13。主圖案11及輔助圖案12之外緣分別與狹縫部13相接。狹縫部13具有沿Y方向之第1狹縫部13a、及沿X方向之第2狹縫部13b，該等狹縫部13a、13b包圍主圖案11與輔助圖案12。此處轉印用圖案若為CF之BM形成用之圖案，則主圖案11成為與CF之開口部分對應者，且狹縫部13成為與BM對應者。 主圖案11係遮蔽曝光之光之至少一部分者，且於透明基板上形成第1透過控制膜(以下敍述)。第1透過控制膜係相對於用於光罩之曝光之曝光之光之代表波長光具有透過率T1(%)之膜。第1透過控制膜之透過率T1(%)較佳為0≦T1≦10。 此處所謂「曝光之光」係由搭載於作為LCD用、或FPD(平板顯示器)用而為人所知之曝光裝置上之光源所產生者，可設為包含i線、h線、g線之任一者或包含該等之全部之寬帶光。又，於本發明中，將寬帶光中包含之任一者(例如i線)之波長光設為代表波長光而表現透過率等光學物性。 尤其第1透過控制膜較佳為遮光膜(亦即T1≒0)。於該情形時，第1透過控制膜較佳為例如相對於曝光之光之光學濃度(OD)為3以上之膜，且為實質上不使曝光之光透過之膜。又，該遮光膜較佳為於其表面側(遠離透明基板之側)具備抗反射層。抗反射層發揮使繪圖光或曝光之光之反射降低之功能。 主圖案11較佳為具有被相互平行之一對直線夾著之帶狀之區域，更佳為具有被相互平行之二對直線夾著之帶狀之區域。例如，主圖案11可設為長方形、或平行四邊形、或將該等結合而成之形狀。又，主圖案較佳為按照單位圖案規律地排列而相互平行地排列複數個。 主圖案11具有至少1個角部。該角部較佳為凸形狀之角部。圖4所示之長方形之主圖案11於其四個角落分別具有直角之角部11a。但是，根據主圖案之形狀亦可未必為直角之角部。例如於平行四邊形等具有直角以外之角部之主圖案中，可設為60～120度之凸形之角部。 主圖案11具有於以近接曝光方式進行曝光時能夠於被轉印體上解像之尺寸。例如，作為主圖案11之尺寸，可使用帶狀之部分之寬度(或短邊之長度)M1為10～20 μm、且長邊之長度M2為30～70 μm左右者。具有此種主圖案11之轉印用圖案可較佳地用作CF用之BM圖案。藉由將該主圖案11曝光且轉印而可於被轉印體上形成寬度(或短邊之長度)為12～20(μm)、長邊之長度為30～70(μm)左右之主圖案像。再者，該等圖案設計亦與下述之關於狹縫部之尺寸及曝光偏置之應用之部分相關。 進而，單位圖案14包含配置於主圖案11所具有之角部之附近之輔助圖案12。該輔助圖案12並未與主圖案11連接，而是以與主圖案11相離而配置之所謂「島」之狀態形成。 輔助圖案12於透明基板上形成第2透過控制膜(以下敍述)。該第2透過控制膜相對於曝光之光之代表波長光具有透過率T2(%)。第2透過控制膜亦可為相對於曝光之光之代表波長光之透過率T2(%)較佳為0＜T2≦60、更佳為10≦T2≦50、進而佳為20≦T2≦50之半透光膜。或第2透過控制膜亦可為實質上不使曝光之光透過之遮光膜(T2≒0)。 上述之第1透過控制膜與第2透過控制膜可為包含彼此相同之材料之膜，亦可為包含彼此不同之材料之膜。例如，於將第1透過控制膜與第2透過控制膜均設為遮光膜之情形時，可使該等為包含相同之材料之膜。又，亦可將第1透過控制膜設為遮光膜，且將第2透過控制膜設為具有上述透過率T2(%)之半透光膜。 又，第1透過控制膜與第2透過控制膜可分別為單層構成，亦可分別為積層構成。例如，亦可將第2透過控制膜設為具有特定之透過率T2(T2＞0)之單一膜，且第1透過控制膜可於上述第2透過控制膜之上積層其他膜(例如第3透過控制膜)而形成。於該情形時，第3透過控制膜亦可為遮光膜，或作為具有積層構成之第1透過控制膜，曝光之光之透過率實質上亦可成為零。 再者，於使第1透過控制膜與第2透過控制膜中之至少任一方之膜具有積層構成之情形時，除上下之膜直接積層之情形外，亦可將上下之膜間接地積層。即，亦可為，上下之膜非接觸，於其間介置其他膜。其他膜可設為例如蝕刻阻止膜、電荷控制膜等功能膜。 又，於第1透過控制膜與第2透過控制膜分別以特定之透過率使曝光之光透過之情形時，相對於曝光之光之代表波長光，第1透過控制膜及/或第2透過控制膜之相位偏移量較佳為±90度之範圍內，更佳為±60度之範圍內。 輔助圖案12之形狀並無特別限制。輔助圖案12較佳為具有點形狀或線形狀。作為點形狀，可舉出正方形等正多角形、或圓形等360/n度(n≧4)之旋轉對稱之形狀。又，作為線形狀，可舉出長方形、平行四邊形等具有長邊與短邊之四邊形。關於輔助圖案12之尺寸、或配置輔助圖案12之位置將於以下敍述。 於圖4所例示之轉印用圖案中，主圖案與輔助圖案之任一者均於X方向以相同之間距(P1)而排列，但主圖案與輔助圖案之位置每隔1/2間距相互偏移而配置。此種配置於取得本發明之效果方面較為有用。 狹縫部13係於轉印用圖案中使曝光之光之至少一部分透過之部分。狹縫部13係相對於曝光之光之代表波長光之透過率較主圖案11或輔助圖案12高之部分。狹縫部13較佳為透明基板之表面露出而成之透光部。 圖5及圖6係表示輔助圖案之配置例之俯視圖。 如圖5及圖6中部分所示，狹縫部13包圍主圖案11及輔助圖案12，並且以特定之間距排列於X方向及Y方向。構成狹縫部13之第1狹縫部13a與第2狹縫部13b藉由於轉印用圖案內以格子狀排列而相互交叉。狹縫部13未必限於縱橫交叉成直角者(圖5)，亦可為縱橫所成之角度較佳為於90度±45度之範圍、更佳為於90度±30度之範圍傾斜者(圖6)。 即，狹縫部13具有：帶狀之第1狹縫部13a，其具有寬度S1(μm)，並於一方向(圖5中Y方向)延伸；及帶狀之第2狹縫部13b，其具有寬度S2(μm)，並於另一方向(圖3(a)中X方向)延伸。第1狹縫部13a與第2狹縫部13b相互交叉(圖5之例中垂直地交叉)。 例如，沿主圖案之長邊之第1狹縫部13a之寬度S1(μm)可設為5～20 μm，沿主圖案之短邊之第2狹縫部13b之寬度S2(μm)可設為10～30 μm。藉由包含具有此種寬度之第1狹縫部13a及第2狹縫部13b之轉印用圖案，可將劃分X方向上寬度3～20 μm、Y方向上寬度10～30 μm等CF開口之BM像形成於被轉印體上。第1狹縫部13a之寬度S1與第2狹縫部13b之寬度S2之關係較佳為S1≦S2。於圖5中，第2狹縫部13b之寬度S2較第1狹縫部13a之寬度S1大。於第2狹縫部(粗狹縫部)13b，在排列於Y方向之主圖案11之間，於Y方向排列有2個輔助圖案12，另一方面，於第1狹縫部(細狹縫部)13a，在排列於X方向之主圖案11之間，於X方向配置有1個輔助圖案12。 尤其關於細寬度之第1狹縫部，可應用0＜Δ≦5左右之曝光偏置Δ(μm)進行遮罩圖案之設計。此處所謂「曝光偏置Δ」係用於曝光之光罩之圖案尺寸、與對應於此而於被轉印體上形成之圖案尺寸之差(前者－後者)。隨著圖案成為細寬度，使上述曝光偏置Δ為正值而進行圖案設計較為有用。此時，可考慮由曝光條件引起之解像性之制約或遮罩圖案加工之難度等而進行。 此處，於第1狹縫部13a與第2狹縫部13b交叉之區域，與其接近之4個主圖案11之4個角部對向，將以直線連結該等4個角部之頂點而形成之四邊形之區域設為交叉區域16。對於該交叉區域16，較佳為以使輔助圖案12之重心G位於交叉區域16內之方式而配置輔助圖案12。更佳為，以使輔助圖案12包含於交叉區域16內之方式(換言之，以不使輔助圖案12自交叉區域16露出之方式)配置輔助圖案12為宜。 於圖5之配置例中，表示主圖案11為長方形，且1個主圖案11於外周具有4個角部之情形。1個主圖案11具有之4個角部全部成為直角之角部。第1狹縫部13a與第2狹縫部13b交叉之交叉區域16成為以直線連結4個主圖案11之相對向之4個角部之頂點而形成之四邊形之交叉區域16。該交叉區域16係於Y方向(縱)具有S2之尺寸、且於X方向(橫)具有S1之尺寸之長方形之區域。輔助圖案12與主圖案11相離而配置。如上所述，輔助圖案12較佳為以使輔助圖案12之重心G位於交叉區域16內之方式而配置，更佳為以使輔助圖案12包含於交叉區域16內之方式而配置為宜。 又，於圖5之配置例中，於1個交叉區域16配置有2個輔助圖案12。各個輔助圖案12形成為長方形。又，2個輔助圖案12於1個交叉區域16內彼此相離而配置。而且，輔助圖案12各自與最接近之2個主圖案11之角部之頂點隔開相等之距離而配置。即，輔助圖案12所具有之重心G於X方向上配置於自與該輔助圖案12接近之2個主圖案11之角部(於該例中為直角之角部)之頂點起之等距離之位置。此處，主圖案11於X方向上隔以S1之寬度而排列，故將該主圖案11之排列方向設為X方向。 另一方面，於圖6之配置例中，表示主圖案11為平行四邊形，且1個主圖案11於外周具有4個角部之情形。1個主圖案11具有之4個角部中之2個角部成為銳角，其他2個角部成為鈍角。於該情形時，第1狹縫部13a與第2狹縫部13b交叉之交叉區域16亦成為以直線連結4個主圖案11之相對向之4個角部之頂點而形成之四邊形之交叉區域16。於該例中，交叉區域16亦為於Y方向(縱)具有S2之尺寸、且於X方向(橫)具有S1之尺寸之長方形之區域。而且，於該例中，輔助圖案12亦與主圖案11相離而配置。又，輔助圖案12較佳為以使輔助圖案12之重心G位於交叉區域16內之方式而配置，更佳為以使輔助圖案12包含於交叉區域16內之方式而配置為宜。再者，交叉區域16未必為長方形，亦可為平行四邊形。 又，於圖6之配置例中，於1個交叉區域16內彼此相離地配置有2個長方形之輔助圖案12。此處，2個輔助圖案12各自於X方向上並未配置於自最接近之2個主圖案11之角部之頂點起之等距離之位置。即，輔助圖案12之重心G朝較於X方向上連結與該輔助圖案12接近之2個主圖案11之角部(銳角之角部與鈍角之角部)之直線之中心位置朝具有銳角之角部之側略微偏移而配置。該偏移量於X方向上向銳角之角部側成為U(μm)。藉此，輔助圖案12相較對與其接近之2個主圖案11之角部中之具有鈍角之角部之主圖案11，更對具有銳角之角部之主圖案11自更近之距離帶來光學影響。 但是，於使輔助圖案12之位置偏移之情形時，較佳亦為使輔助圖案12之重心G處於交叉區域16內(更佳為，使輔助圖案12處於交叉區域16內)，且較佳亦為於該範圍使輔助圖案12於X方向上朝銳角之角部側偏移。 再者，如上所述以使輔助圖案12之重心G位於交叉區域16內之方式將輔助圖案12配置於交叉區域16之情形時，配置於1個交叉區域16之輔助圖案12之個數並無特別限制，但較佳為1～4個為宜。又，配置於1個交叉區域16之輔助圖案12之個數較佳為偶數，設為2個或4個為宜。更佳為2個。此情形如圖4所示，每1個單位圖案(此處為SP單位圖案)14之輔助圖案12之個數、或每1個主圖案11之輔助圖案12之個數一致。此處，可表現為每1個單位圖案14具有2個輔助圖案12之圖案設計。或亦可謂對於X方向上相鄰之2個主圖案11之角部配置1個輔助圖案12。又，換言之，對劃定圖5之交叉區域16之4個角部配置2個輔助圖案12，且對該角部之轉印帶來影響。但是，並不限於此，亦可於1個角部配置1個輔助圖案12。 又，如圖5及圖6所示，輔助圖案12於X方向上具有H1(μm)之尺寸，且於Y方向上具有H2(μm)之尺寸。輔助圖案12之尺寸H1(μm)、H2(μm)較佳為1≦H1≦S1、1≦H2＜0.5×S2。H1(μm)、H2(μm)之較佳之範圍例如為1≦H1≦6、1≦H2≦3。 又，輔助圖案12與主圖案11之Y方向之相離距離V(μm)較佳為0≦V＜0.5×S2－H2，更佳為0.5≦V＜0.5×S2－H2，進而佳為0.5≦V＜0.25×S2－0.5×H2。 再者，於上述之圖4、圖5及圖6中，將複數個輔助圖案12設為全部相同之形狀而例示，但複數個輔助圖案12亦可未必為相同之形狀。例如，於1個單位圖案14中包含複數個輔助圖案12之情形時，該等複數個輔助圖案12可為形狀彼此不同者，亦可為尺寸彼此不同者。 又，輔助圖案12於將光罩之轉印用圖案藉由近接曝光而轉印至被轉印體上之情形時，不會於被轉印體上解像。即，輔助圖案12於近接曝光時，不形成獨立之轉印像。其原因在於，輔助圖案12具有較小的尺寸，該尺寸未滿對於輔助圖案12所具有之透光率能夠解像之尺寸。又，輔助圖案12參與上述近接曝光時於近接間隙中產生之曝光之光之繞射。而且，於先前之光罩中，於主圖案之轉印像(光學像)中，發現有其角部因光之繞射而帶弧度、使有效面積率減少之傾向，但輔助圖案12會抑制該傾向。於本發明者之模擬中，亦發現於使用不具有輔助圖案12之轉印用圖案之情形時，光學像中之主圖案之角部尖端缺損，或該主圖案之外緣朝內側偏移(BM寬度變大)之傾向，但於使用具有輔助圖案12之轉印用圖案之情形時，該等傾向得以抑制。該結果為，與不具有輔助圖案12之情形相比，於具有輔助圖案12之情形時，將轉印用圖案之光學像形成於被轉印體上時之轉印像(光學像)中之主圖案之有效面積率變高。該有效面積率係指與1個單位圖案對應之轉印像(光學像)中之主圖案之有效面積率。 此處，所謂有效面積率係於將轉印用圖案於被轉印體上曝光而形成之轉印像(光學像)中，形成與用於CF之開口形成之光強度閾值對應之等高線的閉曲線內之面積率。由此，提高上述有效面積率會令CF開口率增加。 例如，於轉印至被轉印體之轉印像中，1個單位圖案14中之主圖案11之有效面積率為47%以上，較佳為50%以上，更佳為52%以上。此係指於使用本發明之實施形態之光罩而製造之LCD中，會對開口率較高、更明亮之圖像、或功耗更小之性能有所貢獻。 再者，根據上述說明而明確，本發明中之「轉印用圖案」係指包含於被轉印體上不獨立地解像之輔助圖案在內的、受到用於轉印之曝光之光之照射而形成被轉印體上之光強度分佈之光罩的圖案。 該轉印用圖案較佳為，能夠藉由轉印至形成於被轉印體(例如CF基板)上之負型感光材料而形成立體構成物(例如BM)。又，除此以外，轉印用圖案亦能夠形成對BM附加有其他功能(例如感光性間隔件等)之複雜之立體形狀。 本發明之光罩藉由近接曝光方式之曝光裝置(近接式曝光裝置)而曝光。該曝光裝置中，可將準直角(度)設為0.5～2.5，更佳為1.0～2.0左右。近接曝光中之近接間隙係根據光罩之尺寸而設定。本發明中，於將該近接間隙設為例如30～200 μm、較佳為40～100 μm左右之間隙時，效果顯著。又，作為曝光之光，較佳為使用處於300～450 nm之波長域之光，可使用單一波長之光、或具有寬波長域之光。又，作為曝光用之光源，亦可較佳地使用i線、h線、g線之任一者、或包含該等全部之光源。 本發明之光罩所應用之第1至第3透過控制膜之材料可應用公知者。 例如，於任一透過控制膜為實質上不使曝光之光透過之遮光膜之情形時，可設為含有Cr、Ta、Zr、Si、Mo等之膜，可自該等單體或化合物(氧化物、氮化物、碳化物、氧氮化物、碳氮化物、碳氧氮化物等)中選擇適當者。尤其可較佳地使用Cr或Cr之化合物。 又，作為透過控制膜之材料，可使用過渡金屬矽化物(MoSi等)、或其化合物。作為過渡金屬矽化物之化合物，可舉出氧化物、氮化物、氧氮化物、碳氧氮化物等，較佳為例示MoSi之氧化物、氮化物、氧氮化物、碳氧氮化物等。 又，例如，於將第1透過控制膜與第2透過控制膜設為包含相同材料之膜，且將各個透過控制膜設為遮光膜之情形時，將自上述所選擇之膜材料應用於該等即可。 又，於將第1至第3透過控制膜之任一者設為使曝光之光之一部分透過之膜(半透光膜)之情形時，該膜材料可設為例如含有Cr、Ta、Zr、Si、Mo等之膜，且可自該等化合物(氧化物、氮化物、碳化物、氧氮化物、碳氮化物、碳氧氮化物等)中選擇適當者。尤其可較佳地使用Cr之化合物。 作為其他半透光膜材料，可使用Si之化合物(SiON等)、或過渡金屬矽化物(MoSi等)、或其化合物。作為過渡金屬矽化物之化合物，可舉出氧化物、氮化物、氧氮化物、碳氧氮化物等，較佳為例示MoSi之氧化物、氮化物、氧氮化物、碳氧氮化物等。 又，例如，於將第1透過控制膜設為遮光膜、且將第2透過控制膜設為半透光膜之情形時，可選擇對彼此之蝕刻劑具有耐受性之材料。例如，對於第1透過控制膜可使用含有Cr之材料，對於第2透過控制膜可使用含有Si之材料。 又，將第1至第3透過控制膜中之複數個透過控制膜之膜材料設為能夠藉由共通之蝕刻劑而蝕刻之材料(例如含有Cr之膜)，且視需要亦可使用與該材料之間具有蝕刻選擇性之蝕刻阻止膜。詳情將於以下敍述。 又，聯繫以上所述，用以獲得本發明之光罩之光罩基底可設為以下(1)～(3)中之任一構成。 (1)於透明基板上成膜有遮光膜之光罩基底。 (2)於透明基板上依序積層有半透光膜、及與其具有蝕刻選擇性之遮光膜之光罩基底。 (3)於透明基板上，積層有半透光膜、及能夠以與其共通之蝕刻劑進行蝕刻之遮光膜，且於其中間(半透光膜與遮光膜之間)設置有與其等具有蝕刻選擇性之蝕刻阻止膜之光罩基底。 又，本發明之光罩於不妨礙本發明之效果之範圍，亦可進而具有其他光學膜(例如，控制曝光之光透過率或反射率、相位特性之膜)、或功能膜(例如，進行電荷之控制、蝕刻性之控制等之膜)、或由該等而得之膜圖案。 ＜光罩之製造方法＞ 繼而，對本發明之實施形態之光罩之製造方法進行說明。 上述構成之光罩可藉由以下敍述之方法而製造。 (光罩基底準備步驟) 首先，準備圖7(a)所示之光罩基底20。該光罩基底20係於透明基板21上依序積層第2透過控制膜22與第3透過控制膜23而形成，進而於第3透過控制膜23之上積層抗蝕膜24而形成者。 透明基板21可使用石英玻璃等透明材料而構成。透明基板21之大小或厚度並無限制。光罩基底20只要為用於顯示裝置之製造者，則可使用一邊之長度為300～1800 mm、厚度為5～16 mm左右之具有四邊形之主面之透明基板21。 第2透過控制膜22較佳為包含Si之膜，可自Si化合物(SiON等)或MSi(M為Mo、Ta、Ti等金屬)或其化合物(氧化物、氮化物、氧氮化物、碳氧氮化物等)中選擇適當之膜材料。此處作為一例，將第2透過控制膜22設為半透光膜。又，第2透過控制膜22相對於曝光之光之代表波長光之透過率T2例如設為40%。 第3透過控制膜23設為以Cr為主成分之膜(Cr或其氧化物、氮化物、碳化物、氧氮化物、碳氧氮化物等化合物)。即，第2透過控制膜22與第3透過控制膜23設為對彼此之蝕刻劑具有耐受性之所謂彼此具有蝕刻選擇性之膜。此處作為一例，將第3透過控制膜23設為遮光膜。 抗蝕膜24能夠使用EB(electron beam，電子束)抗蝕劑、光阻等而形成。此處作為一例設為使用光阻。抗蝕膜24可藉由於第3透過控制膜23上塗佈光阻而形成。光阻可為正型、負型之任一者，但此處設為使用正型光阻。 (繪圖步驟) 其次，如圖7(b)所示，使用繪圖裝置對抗蝕膜24繪製所需之圖案。用於繪圖之能量線可使用電子束或雷射光束等。此處作為一例，使用雷射繪圖機之雷射光束(波長410～420 nm)進行繪圖。於該繪圖處理中，以不對與上述主圖案11對應之區域24a賦予劑量(Dose)、對與上述輔助圖案12及狹縫部13對應之區域24b、24c賦予劑量之方式進行繪圖。又，與輔助圖案12對應之區域24b之繪圖係以相對較低之劑量之照射進行，與狹縫部13對應之區域24c之繪圖係以相對較高之劑量、即較輔助圖案12高之劑量之照射進行。藉此，與主圖案11對應之區域24a之劑量實質上成為零。又，與輔助圖案12對應之區域24b之劑量較與狹縫部13對應之區域24c之劑量少。 (顯影步驟) 其次，如圖7(c)所示，對完成上述繪圖步驟之光罩基底20之抗蝕膜24進行顯影。藉此，於第3透過控制膜23上，形成與上述劑量之不同相應地具有複數種類之殘膜厚之抗蝕圖案24p。即，於抗蝕圖案24p中，與輔助圖案12對應之區域24b之抗蝕殘膜厚較與主圖案11對應之區域24a之抗蝕殘膜厚小。又，於與狹縫部13對應之區域24c，未殘留抗蝕劑，第3透過控制膜23之表面露出。 (第1蝕刻步驟) 其次，如圖8(d)所示，將抗蝕圖案24p作為遮罩進行濕式蝕刻。於該濕式蝕刻中，藉由對第3透過控制膜23與第2透過控制膜22依序蝕刻而去除，從而使透明基板21之表面露出於與狹縫部13對應之區域24c。此處，第3透過控制膜23與第2透過控制膜22成為彼此具有蝕刻選擇性之膜，故濕式蝕刻劑對照各自之膜材料而依序應用適當者。 (抗蝕減膜步驟) 其次，如圖8(e)所示，藉由將抗蝕圖案24p減膜特定之厚度量而使第3透過控制膜23之新的表面露出於與輔助圖案12對應之區域24b。抗蝕圖案24p之減膜係藉由將抗蝕圖案24p之表面氧化、使其膜厚均勻地減少之處理而進行。於該處理中，可應用電漿灰化、或臭氧水處理等。 (第2蝕刻步驟) 其次，如圖8(f)所示，將於上述抗蝕減膜步驟中減膜後之抗蝕圖案24p作為遮罩，對上述新露出之第3透過控制膜23進行蝕刻。藉此，於與輔助圖案12對應之區域24b，第2透過控制膜22之表面露出。 (抗蝕剝離步驟) 其次，如圖8(g)所示，剝離抗蝕圖案24p。藉此，於透明基板21上，形成包含於第2透過控制膜22上積層有第3透過控制膜23之構成之積層膜之主圖案11，並且形成包含第2透過控制膜22之單一膜之輔助圖案12。再者，於第2透過控制膜22上積層有第3透過控制膜23之構成之積層膜相當於第1透過控制膜。 藉由以上之製造方法而完成本發明之光罩。 根據該製造方法，經過將第3透過控制膜23與第2透過控制膜22該2個光學膜依序蝕刻之步驟而形成包含主圖案11與輔助圖案12之轉印用圖案。該轉印用圖案藉由僅1次繪圖步驟之應用而獲得。藉此，無需複數次繪圖步驟，故可縮短繪圖裝置之佔有時間，可提高生產效率。進而，於該製造方法中，不會產生伴隨複數次繪圖之對準偏移、即第3透過控制膜23與第2透過控制膜22相互之對準偏移(例如0.2～0.5 μm左右)。因此，可獲得轉印用圖案之各部分之尺寸、即CD(Critical Dimension，臨界尺寸)精度較高之光罩。尤其於本發明之光罩中，主圖案11與輔助圖案12之位置精度較為重要，故將上述製造方法應用於該光罩之製造於可獲得優異之CD精度之方面為有利的。 繼而，對使用於第2透過控制膜與第3透過控制膜之間具有蝕刻阻止膜之光罩基底而製造本發明之光罩之方法進行說明。 (光罩基底準備步驟) 首先，準備圖9(a)所示之光罩基底20。該光罩基底20係於透明基板21上依序積層第2透過控制膜22、蝕刻阻止膜25及第3透過控制膜23而形成，進而於第3透過控制膜23之上積層正型之抗蝕膜24而形成者。 透明基板21可使用石英玻璃等透明材料而構成。透明基板21之大小或厚度並無限制。光罩基底20只要為可用於顯示裝置之製造者，則可使用一邊之長度為300～1800 mm、厚度為5～16 mm左右之具有四邊形之主面之透明基板21。 第2透過控制膜22係包含Cr之化合物(選自氧化物、氮化物、碳化物、氧氮化物、碳氧氮化物等之材料)之膜，設為相對於曝光之光之代表波長光之透過率T2為40%之半透光膜。 蝕刻阻止膜25可設為包含Si之膜，可自Si化合物(SiON等)或MSi(M為Mo、Ta、Ti等金屬)或其化合物(氧化物、氮化物、氧氮化物、碳氧氮化物等)中選擇適當之膜材料。 第3透過控制膜23係包含Cr之化合物(氧化物、氮化物、碳化物、氧氮化物、碳氧氮化物等)之膜，設為遮光膜。即，第2透過控制膜22與第3透過控制膜23包含能夠藉由彼此相同之蝕刻劑進行蝕刻之膜材料。相對於此，蝕刻阻止膜25包含與第2透過控制膜22及第3透過控制膜23具有蝕刻選擇性之材料。 (繪圖步驟) 其次，如圖9(b)所示，使用雷射繪圖機對抗蝕膜24進行繪圖。此時，以不對與主圖案11對應之區域24a賦予劑量、而對與輔助圖案12及狹縫部13對應之區域24b、24c賦予劑量之方式進行繪圖。又，與輔助圖案12對應之區域24b之繪圖以相對較低之劑量之照射進行，與狹縫部13對應之區域24c之繪圖以相對較高之劑量、即較輔助圖案12高之劑量之照射進行。藉此，與主圖案11對應之區域24a之劑量實質上成為零。又，與輔助圖案12對應之區域24b之劑量較與狹縫部13對應之區域24c之劑量少。 (顯影步驟) 其次，如圖9(c)所示，對完成上述繪圖步驟之光罩基底20之抗蝕膜24進行顯影。藉此，於第3透過控制膜23上，形成與上述劑量之不同相應地具有複數種類之殘膜厚之抗蝕圖案24p。即，於抗蝕圖案24p中，與輔助圖案12對應之區域24b之抗蝕殘膜厚較與主圖案11對應之區域24a之抗蝕殘膜厚小。又，於與狹縫部13對應之區域24c，未殘留抗蝕劑，第3透過控制膜23之表面露出。 (第1蝕刻步驟) 其次，如圖10(d)所示，將抗蝕圖案24p作為遮罩進行濕式蝕刻。於該濕式蝕刻中，藉由對第3透過控制膜23、蝕刻阻止膜25及第2透過控制膜22依序蝕刻而去除，從而使透明基板21之表面露出於與狹縫部13對應之區域24c。此處，第3透過控制膜23與蝕刻阻止膜25成為彼此具有蝕刻選擇性之膜，又，第2透過控制膜22與蝕刻阻止膜25亦成為彼此具有蝕刻選擇性之膜。因此，濕式蝕刻劑對照各自之膜材料而依序應用適當者。 (抗蝕減膜步驟) 其次，如圖10(e)所示，藉由將抗蝕圖案24p減膜特定之厚度量而使第3透過控制膜23之新的表面露出於與輔助圖案12對應之區域24b。抗蝕圖案24p之減膜係藉由將抗蝕圖案24p之表面氧化、且使其膜厚均勻地減少之處理而進行。於該處理中，可應用電漿灰化、或臭氧水處理等。 (第2蝕刻步驟) 其次，圖10(f)所示，將於上述抗蝕減膜步驟中減膜後之抗蝕圖案24p作為遮罩，對上述新露出之第3透過控制膜23進行蝕刻，繼而，對蝕刻阻止膜25進行蝕刻。藉此，於與輔助圖案12對應之區域24b，第2透過控制膜22之表面露出。 再者，必須進行膜所具有之光學特性之調整，但亦可不去除蝕刻阻止膜25而使其殘存，藉由蝕刻阻止膜25與第2透過控制膜22之積層而用作上述「第2透過控制膜」。 (抗蝕剝離步驟) 其次，如圖10(g)所示，剝離抗蝕圖案24p。藉此，於透明基板21上，形成包含於第2透過控制膜22上積層有蝕刻阻止膜25與第3透過控制膜23之構成之積層膜之主圖案11，並且形成包含第2透過控制膜22之單一膜之輔助圖案12。再者，於第2透過控制膜22上積層有蝕刻阻止膜25與第3透過控制膜23之構成之積層膜相當於第1透過控制膜。 藉由以上之製造方法而完成本發明之光罩。 根據該製造方法，可獲得與上述之製造方法相同之優點。即，經過將第3透過控制膜23與第2透過控制膜22該2個光學膜與蝕刻阻止膜25一同依序蝕刻之步驟而形成包含主圖案11與輔助圖案12之轉印用圖案。該轉印用圖案藉由僅1次繪圖步驟之應用而獲得。藉此，無需複數次繪圖步驟，故可縮短繪圖裝置之佔有時間，可提高生產效率。進而，於該製造方法中，不會產生伴隨複數次繪圖之對準偏移、即第3透過控制膜23與第2透過控制膜22相互之對準偏移(例如0.2～0.5 μm左右)。因此，可獲得轉印用圖案之各部分之尺寸、即CD精度較高之光罩。尤其於本發明之光罩中，主圖案11與輔助圖案12之位置精度較為重要，故將上述製造方法應用於該光罩之製造於可獲得優異之CD精度之方面為有利的。 再者，本發明亦可作為顯示裝置之製造方法而實現。於該情形時，顯示裝置之製造方法成為包含以下步驟之方法，即，準備上述構成之光罩；及使用近接曝光方式之曝光裝置將上述轉印用圖案曝光且轉印至被轉印體上。 又，於本發明之實施形態之光罩或其製造方法中，主圖案11與輔助圖案12可為包含彼此相同之材料之膜，亦可為包含彼此不同之材料之膜。又，於主圖案11與輔助圖案12為包含彼此不同之材料之膜之情形時，本發明之光罩之製造方法中亦可將繪圖步驟僅設為1次。於該情形時，能夠精細地控制製造過程中之主圖案11與輔助圖案12之對準。而且，如上所述可使自2個主圖案11各自之角部至輔助圖案12之重心G為止之直線距離(未圖示，例如設為K1與K2)準確地相等。例如，可使K1－K2＜0.1 μm。 又，根據液晶顯示裝置等之設計，BM之交叉並不限於垂直(90度)，有以45～135度左右之角度傾斜之格子狀之情形，像素之形狀亦並不限於長方形，有平行四邊形或將其複數個連結而成之形狀之情形。又，亦可有於1個像素所包含之R、G、B各子像素之任一者為與其他不同之形狀或尺寸之情形，對於此種圖案設計，本發明亦會有效地發揮效果。 ＜實施例＞ 以下，將對使用本發明之光罩於被轉印體上形成之轉印像藉由模擬而產生之評價結果作為實施例且與參考例一併顯示。 (參考例) 於模擬中，首先將圖11所示之參考圖案設為主圖案11，取得將其曝光時之光學像。該主圖案11為平行四邊形，其角部中，銳角側具有75度之角度，鈍角側具有105度之角度。參考例設為僅主圖案11之態樣，實施例設為於主圖案11中添加有輔助圖案12之態樣。繼而，將參考例與實施例加以比較。 又，關於圖案尺寸，根據作為市場動向之希望於BM之一部分具有4.5～6 μm之細線寬度之CF之現狀而如下所述。再者，下述之寬度S1、S2、間距P1、P2如圖4～圖6中所說明。 第1狹縫部之寬度S1＝5 μm 第2狹縫部之寬度S2＝18 μm X方向之間距P1＝18 μm Y方向之間距P2＝54 μm 該尺寸之圖案例如係相當於470 ppi之液晶顯示裝置之微細圖案。 模擬條件如下。 使用近接式曝光裝置(準直角1.5度)使近接間隙(Gap)於50～100 μm之範圍變化時，取得被轉印體上所形成之轉印像。曝光之光之波長設為365 nm(i線)。 圖12～圖14表示根據參考例(圖11)之參考圖案而形成於被轉印體上之光學像。圖12(a)為Gap＝50 μm之情形，圖12(b)為Gap＝60 μm之情形，圖13(a)為Gap＝70 μm之情形，圖13(b)為Gap＝80 μm之情形，圖14(a)為Gap＝90 μm之情形，圖14(b)為Gap＝100 μm之情形。圖中之光學像中呈現之等高線、與其間之色之濃淡係指光學像之光強度之分佈。光學像之光強度之種類如圖11中所記載。於參考例之模擬結果中，可知即便較小之Gap(50 μm)，亦可見角部之變圓、或角部尖端之缺損傾向，且隨著Gap變大，該傾向變得更加強烈。 (實施例1) 於實施例1中，將與上述參考例相同之參考圖案設為主圖案11，且於該主圖案11中添加有如圖15之輔助圖案12。該輔助圖案12係長邊為X＝2.5 μm、短邊為Y＝1.5 μm之長方形，且與主圖案11於Y方向上相離V＝2.0 μm而配置。又，輔助圖案12之重心G設為自連結相鄰之主圖案11之角部之直線之中心位置朝銳角之角部側偏移U＝0.5 μm之位置。又，輔助圖案12藉由實質上不使曝光之光透過之遮光膜而形成。 將導入上述圖15所示之輔助圖案12時之光學像示於圖16～圖18。圖16(a)為Gap＝50 μm之情形，圖16(b)為Gap＝60 μm之情形，圖17(a)為Gap＝70 μm之情形，圖17(b)為Gap＝80 μm之情形，圖18(a)為Gap＝90 μm之情形，圖18(b)為Gap＝100 μm之情形。根據該結果，於實施例1中，與參考例(圖11)之情形相比較，確認到主圖案11之角部之形狀劣化得以抑制，甚至於角部之角落主圖案形狀之劣化亦較少。尤其確認到，表示光學像之光強度50%以上之區域(於圖16～圖18所示之各光學像中，自較淡之色起之第3個等高線內)之面積為較圖12～圖14所示之參考例相對較大之區域。因此，根據實施例1，藉由選擇適當之曝光之光強度而能夠使CF之實效開口較參考例大。 (實施例2) 於實施例2中，將與上述參考例相同之參考圖案設為主圖案11，且於該主圖案11中添加有如圖19之輔助圖案12。該輔助圖案12係長邊為X＝5.5 μm、短邊為Y＝2.0 μm之長方形，且與主圖案11於Y方向上相離V＝1.0 μm而配置。又，輔助圖案12之重心G設為自連結相鄰之主圖案11之角部之直線之中心位置朝銳角之角部側偏移U＝0.5 μm之位置。又，輔助圖案12藉由對曝光之光(i線)之透過率T為40%之半透光膜而形成。 將導入上述圖19所示之輔助圖案12時之光學像示於圖20～圖22。圖20(a)為Gap＝50 μm之情形，圖20(b)為Gap＝60 μm之情形，圖21(a)為Gap＝70 μm之情形，圖21(b)為Gap＝80 μm之情形，圖22(a)為Gap＝90 μm之情形，圖22(b)為Gap＝100 μm之情形。根據該結果，於實施例2中，與上述實施例1同樣地確認到主圖案11之角部之形狀劣化得以抑制。又，與上述實施例1相比較，可知於實施例2之情形時，主圖案11之角部附近之等高線變得更「密」。此係指相對於曝光量之變動的圖案CD之容限更大。進而，可知於實施例2之情形時，於在曝光時所應用之光強度更廣之範圍，可獲得改善後之角部形狀，故可確保穩定之轉印性，亦可取得良率之提昇。 再者，於實施例1及實施例2中，均未將輔助圖案12本身作為解像圖案而轉印。此係指輔助圖案12根據其透過率(包含實質上為零之情形)而具有不會藉由曝光而於被轉印體上解像之尺寸。 又，於實施例1、2中，如上述圖15及圖19所示，使用長方形圖案作為輔助圖案12。另一方面，作為輔助圖案12，於與上述主圖案11同樣地使用具有銳角與鈍角之角部之平行四邊形圖案之情形時，所獲得之光學像之改良傾向與使用長方形圖案之情形時大致相同。 (光學像之有效面積率之比較) 基於上述模擬結果，求出將參考例、實施例1、實施例2之光學像形成於CF基板上時的、與所獲得之子像素之開口率對應之光學像之有效面積率。 此處，如圖23所示，所謂有效面積率係將光罩之轉印用圖案中之SP單位圖案面積(P1×P2)作為分母，將圖12～圖14、圖16～圖18、圖20～圖22所示之由各等高線包圍之面積作為分子而計算所得者。再者，於產生有等高線之一部分與鄰接之子像素之等高線相連之現象(此現象與BM之斷線對應)之情形時，將該子像素除外而計算。 圖24係對近接間隙設為70 μm時之光學像中之光強度與有效面積率之關係進行繪製之圖。根據該圖24可知，若將光強度設為50%以上，則實施例1(由遮光膜形成之輔助圖案)表現出較參考例(無輔助圖案)高之有效面積率，為有利上的。進而明確，若採用實施例2(由半透光膜形成之輔助圖案)，則於光強度為40～60%之廣泛之範圍，有效面積率超過參考例。再者，該計算係將近接間隙設為70 μm時之計算，但即便使近接間隙變化亦可見大致同樣之傾向。 又，參考例、實施例1、實施例2各自之子像素有效面積率之平均值(除產生有BM之斷線之子像素外)如圖23之表所示，實施例2為最高且有利之值。其係被光學像之光強度為60%以下之等高線所包圍之部分之面積、且於近接間隙為50～100 μm之所有情形時獲得之有效面積率之平均值。 再者，於與轉印像對應之光強度較大之情形時(例如60%以上)，若近接間隙變大(例如90 μm以上)，則斷線之危險逐漸上升。然而，於採用有輔助圖案之實施例1、2中，未見此種危險較參考例增加之傾向。 根據以上可明確，本發明之光罩之特徵在於，藉由近接式曝光裝置之曝光而將上述轉印用圖案之光學像形成於被轉印體上時，上述光學像中之上述主圖案之有效面積率大於使用不具有上述輔助圖案之轉印用圖案且藉由相同曝光條件而形成之光學像中之上述主圖案之有效面積率。 然，半透光性之輔助圖案之導入雖帶來如上所述之優異效果，但為此而延長光罩之生產步驟並不佳。一般而言，於CF基板之生產步驟之前半段必需進行BM製作，於短時期內進行該過程為有利的。該點對於應用本發明之上述製造方法之意義亦較大。 <Configuration of a photomask> The photomask of the present invention is characterized in that it is a photomask for proximity exposure provided on a transparent substrate with a pattern for transfer to be transferred onto a body to be transferred, wherein the pattern for transfer includes : a plurality of main patterns, which are regularly arranged; and auxiliary patterns, which are arranged at a distance from the main pattern in the vicinity of the corners each of the main patterns has; and the main pattern is formed on the transparent substrate. 1. A transmission control film, wherein the auxiliary pattern forms a second transmission control film on the transparent substrate, and has a size that is not resolved on the transfer target body by exposure. A preferred example of the present invention described above is a photomask, characterized in that: a photomask for proximity exposure is provided on a transparent substrate with a pattern for transfer to be transferred onto a body to be transferred, and the pattern for transfer is It includes a repeating pattern in which unit patterns are regularly and repeatedly arranged, and the unit pattern includes: a main pattern; an auxiliary pattern, which is arranged in the vicinity of the corner portion of the main pattern and is separated from the main pattern; and a slit portion, which Surrounding the main pattern and the auxiliary pattern; and forming a first transmission control film on the transparent substrate for the main pattern, and forming a second transmission control film for the auxiliary pattern on the transparent substrate, and having The size of the resolution on the transferred body. The term "exposure" here refers to exposing the transfer pattern included in the photomask by an exposure device, and by this exposure, an optical image can be formed on a transfer target body (CF substrate, etc.), and an optical image can be formed by the exposure. It develops to form a pattern on the resist film on the transfer object. FIG. 4 is a plan view showing an example of the pattern for transfer included in the photomask according to the embodiment of the present invention. The photomask of the embodiment of the present invention is a photomask for proximity exposure, and a pattern for transfer is formed on a transparent substrate constituting the photomask. The pattern for transfer is a pattern for transferring to a transfer target body by proximity exposure, and includes a main pattern 11 , an auxiliary pattern 12 , and a slit portion 13 . The pattern for transfer illustrated here is a pattern for BM formation of CF. However, the drawings are schematic diagrams, and the dimensional ratios and the like of each part are not limited to be the same as the actual pattern design. The transparent substrate constituting the photomask can be used by precisely grinding a transparent material such as quartz glass. The size or thickness of the transparent substrate is not limited, but as a transparent substrate for a photomask used in the manufacture of a display device, it is preferable to have a quadrangular main surface with one side of 300 mm to 1800 mm, and a thickness of 5 to 16 mm left and right. In addition, the light transmittance of each part of the photomask described below shows the value when the light transmittance of the transparent substrate is set to 100%. The pattern for transfer preferably includes a repeating pattern in which unit patterns are regularly and repeatedly arranged. In this case, the number of repetitions is 2 or more. Preferably, the regular repeating arrangement of the unit patterns is arranged at a fixed pitch. In FIG. 4 , a repeating pattern in which the unit patterns are regularly and repeatedly arranged at a specific pitch is illustrated. In the pattern for transfer illustrated in FIG. 4 , a plurality of unit patterns 14 are arranged with a pitch of P1 (µm) in the X direction and a pitch of P2 (µm) in the Y direction. Each unit pattern 14 corresponds to each sub-pixel of CF. In the following description, the unit pattern 14 of the sub-pixel unit is also referred to as "SP unit pattern 14". The spacing P1 of the SP unit pattern 14 in the X direction can be set to 15 to 30 μm, and the spacing P2 of the Y direction can be set to 40 to 100 μm. In addition, the design of the pattern for transfer shown in FIG. 4 is also a repeating pattern in which the unit patterns (hereinafter, also referred to as “P unit patterns”) 15 of pixel units are regularly arranged. The P unit pattern 15 has a larger pattern area than the SP unit pattern 14 , and one P unit pattern 15 includes three SP unit patterns 14 . In the following description, "SP unit pattern 14" will be described only as "unit pattern 14". In the unit pattern 14, the main pattern 11, the auxiliary pattern 12, and the slit part 13 surrounding these are included. The outer edges of the main pattern 11 and the auxiliary pattern 12 are respectively in contact with the slit portions 13 . The slit portion 13 has a first slit portion 13 a along the Y direction and a second slit portion 13 b along the X direction, and the slit portions 13 a and 13 b surround the main pattern 11 and the auxiliary pattern 12 . Here, if the transfer pattern is a pattern for BM formation of CF, the main pattern 11 corresponds to the opening portion of CF, and the slit portion 13 corresponds to BM. The main pattern 11 shields at least a part of the exposure light, and forms a first transmission control film (described below) on the transparent substrate. The first transmission control film is a film having transmittance T1 (%) with respect to light of a representative wavelength of light used for exposure of the mask. The transmittance T1 (%) of the first permeation control film is preferably 0≦T1≦10. The so-called "exposure light" here is generated by a light source mounted on an exposure device known as an LCD or FPD (Flat Panel Display), and may include i-line, h-line, and g-line Any one or broadband light including all of them. Moreover, in this invention, the wavelength light of any one (for example, i-line) contained in broadband light is used as a representative wavelength light, and optical properties, such as transmittance, are expressed. In particular, the first transmission control film is preferably a light-shielding film (that is, T1≒0). In this case, it is preferable that the 1st transmission control film is a film which optical density (OD) with respect to the exposure light is 3 or more, and does not transmit the exposure light substantially, for example. Moreover, it is preferable that this light-shielding film is provided with the antireflection layer on the surface side (side away from the transparent substrate). The antireflection layer functions to reduce reflection of drawing light or exposure light. The main pattern 11 preferably has a band-shaped region sandwiched by a pair of straight lines parallel to each other, and more preferably has a band-shaped region sandwiched by two pairs of straight lines parallel to each other. For example, the main pattern 11 may be a rectangle, a parallelogram, or a combination of these. Moreover, it is preferable that a plurality of main patterns are regularly arranged in accordance with the unit pattern, and are arranged in parallel with each other. The main pattern 11 has at least one corner. The corners are preferably convex corners. The rectangular main pattern 11 shown in FIG. 4 has right-angled corners 11a at its four corners, respectively. However, depending on the shape of the main pattern, it may not necessarily be a right-angled corner. For example, in a main pattern having corners other than right angles, such as a parallelogram, the corners of a convex shape of 60 to 120 degrees can be used. The main pattern 11 has a size that can be resolved on a transfer object when exposed by a proximity exposure method. For example, as the size of the main pattern 11, the width (or the length of the short side) M1 of the strip-shaped portion is 10 to 20 μm, and the length M2 of the long side is about 30 to 70 μm. A pattern for transfer having such a main pattern 11 can be preferably used as a BM pattern for CF. By exposing and transferring the main pattern 11, a main pattern having a width (or length of short side) of 12 to 20 (μm) and a length of long side of about 30 to 70 (μm) can be formed on the transfer object. pattern like. Furthermore, these pattern designs are also related to the section below regarding the size of the slit portion and the application of exposure bias. Furthermore, the unit pattern 14 includes auxiliary patterns 12 arranged in the vicinity of the corners of the main pattern 11 . The auxiliary pattern 12 is not connected to the main pattern 11 , but is formed in the state of a so-called "island" arranged away from the main pattern 11 . The auxiliary pattern 12 forms a second transmission control film (described below) on the transparent substrate. The second transmission control film has a transmittance T2 (%) with respect to light of a representative wavelength of exposure light. The second transmission control film may have a transmittance T2 (%) relative to the representative wavelength light of the exposure light, preferably 0<T2≦60, more preferably 10≦T2≦50, and still more preferably 20≦T2≦50 The semi-transparent film. Or the 2nd transmission control film may be a light-shielding film (T2≒0) which does not transmit the light of exposure substantially. The above-mentioned first permeation control film and second permeation control film may be made of the same material or may be made of different materials. For example, when both the 1st transmission control film and the 2nd transmission control film are made into a light-shielding film, these can be made into the film containing the same material. Moreover, the 1st transmission control film may be made into a light-shielding film, and the 2nd transmission control film may be made into the semi-transparent film which has the said transmittance|permeability T2 (%). In addition, the 1st permeation control film and the 2nd permeation control film may have a single-layer structure, respectively, or may each be a laminated structure. For example, the second permeation control film may be a single film having a specific transmittance T2 (T2>0), and the first permeation control film may be laminated with another film (for example, a third permeation control film) on top of the second permeation control film. through the control membrane). In this case, the 3rd transmission control film may be a light-shielding film, or as a 1st transmission control film which has a laminated structure, the transmittance|permeability of the light of exposure may become substantially zero. Furthermore, when at least one of the first permeation control film and the second permeation control film has a laminated structure, the upper and lower films may be indirectly laminated in addition to the case where the upper and lower films are directly laminated. That is, the upper and lower films may be non-contact, and other films may be interposed therebetween. Other films can be used as functional films such as an etching stopper film and a charge control film. In addition, when the first transmission control film and the second transmission control film transmit the exposure light with specific transmittances, respectively, the first transmission control film and/or the second transmission control film and/or the second transmission control film transmits light with a representative wavelength of the exposure light. The phase shift amount of the control film is preferably within the range of ±90 degrees, more preferably within the range of ±60 degrees. The shape of the auxiliary pattern 12 is not particularly limited. The auxiliary pattern 12 preferably has a dot shape or a line shape. As the dot shape, a regular polygon such as a square, or a rotationally symmetric shape of 360/n degrees (n≧4) such as a circle can be mentioned. Moreover, as a linear shape, the quadrilateral which has a long side and a short side, such as a rectangle and a parallelogram, is mentioned. The size of the auxiliary pattern 12 or the position where the auxiliary pattern 12 is arranged will be described below. In the pattern for transfer illustrated in FIG. 4 , any one of the main pattern and the auxiliary pattern is arranged with the same pitch (P1) in the X direction, but the positions of the main pattern and the auxiliary pattern are mutually separated by 1/2 pitch. Offset configured. Such an arrangement is useful in obtaining the effects of the present invention. The slit portion 13 is a portion that transmits at least a part of the exposure light in the transfer pattern. The slit portion 13 is a portion having a higher transmittance than the main pattern 11 or the auxiliary pattern 12 with respect to the representative wavelength light of the exposure light. The slit portion 13 is preferably a light-transmitting portion formed by exposing the surface of the transparent substrate. 5 and 6 are plan views showing an example of arrangement of auxiliary patterns. As shown in part in FIGS. 5 and 6 , the slit portions 13 surround the main pattern 11 and the auxiliary pattern 12 and are arranged in the X direction and the Y direction with a certain pitch. The 1st slit part 13a and the 2nd slit part 13b which comprise the slit part 13 cross each other by arranging in a lattice shape in the pattern for transfer. The slit portion 13 is not necessarily limited to the vertical and horizontal intersecting at right angles (FIG. 5), and the vertical and horizontal angles are preferably in the range of 90 degrees ± 45 degrees, more preferably in the range of 90 degrees ± 30 degrees inclined (FIG. 5). 6). That is, the slit portion 13 has: a band-shaped first slit portion 13a having a width S1 (μm) and extending in one direction (Y direction in FIG. 5 ); and a band-shaped second slit portion 13b having a width S2 (μm), and extends in the other direction (X direction in Fig. 3(a)). The first slit portion 13a and the second slit portion 13b intersect with each other (in the example of FIG. 5 , they intersect vertically). For example, the width S1 (μm) of the first slit portion 13a along the long side of the main pattern can be set to 5 to 20 μm, and the width S2 (μm) of the second slit portion 13b along the short side of the main pattern can be set to 10 μm ~30 μm. By the transfer pattern including the first slit portion 13a and the second slit portion 13b having such widths, the BM that divides the CF openings, such as the width in the X direction of 3 to 20 μm and the width in the Y direction of 10 to 30 μm, can be divided. The image is formed on the body to be transferred. The relationship between the width S1 of the first slit portion 13a and the width S2 of the second slit portion 13b is preferably S1≦S2. In FIG. 5, the width S2 of the 2nd slit part 13b is larger than the width S1 of the 1st slit part 13a. In the second slit portion (coarse slit portion) 13b, two auxiliary patterns 12 are arranged in the Y direction between the main patterns 11 arranged in the Y direction, and on the other hand, in the first slit portion (thin slit portion) 13a , one auxiliary pattern 12 is arranged in the X direction between the main patterns 11 arranged in the X direction. In particular, with regard to the first slit portion having a narrow width, an exposure offset Δ(μm) of about 0<Δ≦5 can be applied to design the mask pattern. The "exposure offset Δ" referred to here is the difference between the pattern size of the mask used for exposure and the pattern size formed on the transfer object corresponding to this (the former - the latter). As the pattern becomes narrower, it is useful to design the pattern with the above-mentioned exposure offset Δ being a positive value. In this case, it can be performed in consideration of the restriction of the resolution due to the exposure conditions, the difficulty of processing the mask pattern, and the like. Here, in the region where the first slit portion 13a and the second slit portion 13b intersect, the four corners of the four main patterns 11 adjacent to it face the four corners, and the vertices of the four corners are connected with a straight line to form The area of the quadrilateral is designated as the intersection area 16 . For the intersection area 16 , it is preferable to arrange the auxiliary patterns 12 so that the center of gravity G of the auxiliary patterns 12 is located in the intersection area 16 . More preferably, the auxiliary patterns 12 are preferably arranged such that the auxiliary patterns 12 are included in the intersection regions 16 (in other words, the auxiliary patterns 12 are not exposed from the intersection regions 16 ). In the arrangement example of FIG. 5 , the main pattern 11 is a rectangle, and one main pattern 11 has four corners on the outer periphery. All of the four corners included in one main pattern 11 are right-angled corners. The intersection area 16 where the first slit portion 13a and the second slit portion 13b intersect becomes a quadrangular intersection area 16 formed by connecting the vertices of the four opposite corners of the four main patterns 11 with a straight line. The intersection area 16 is a rectangular area having a size of S2 in the Y direction (vertical) and a size of S1 in the X direction (horizontal). The auxiliary pattern 12 is arranged apart from the main pattern 11 . As described above, the auxiliary patterns 12 are preferably arranged so that the center of gravity G of the auxiliary patterns 12 is located in the intersection area 16 , and more preferably, the auxiliary patterns 12 are arranged in the intersection area 16 . In addition, in the arrangement example of FIG. 5 , two auxiliary patterns 12 are arranged in one intersection area 16 . Each of the auxiliary patterns 12 is formed in a rectangular shape. In addition, the two auxiliary patterns 12 are arranged so as to be separated from each other in one intersection area 16 . Furthermore, each of the auxiliary patterns 12 is arranged at an equal distance from the vertexes of the corners of the two closest main patterns 11 . That is, the center of gravity G of the auxiliary pattern 12 is arranged in the X direction at an equal distance from the apex of the corners of the two main patterns 11 adjacent to the auxiliary pattern 12 (right-angled corners in this example). Location. Here, since the main patterns 11 are arranged with the width of S1 in the X direction, the arrangement direction of the main patterns 11 is set to the X direction. On the other hand, in the arrangement example of FIG. 6 , the main pattern 11 is a parallelogram, and one main pattern 11 has four corners on the outer periphery. Two of the four corners of one main pattern 11 are acute angles, and the other two corners are obtuse angles. In this case, the intersecting region 16 where the first slit portion 13a and the second slit portion 13b intersect also becomes the quadrangular intersecting region 16 formed by connecting the vertices of the four opposite corners of the four main patterns 11 with a straight line. In this example, the intersection area 16 is also a rectangular area having a size of S2 in the Y direction (vertical) and a size of S1 in the X direction (horizontal). Moreover, in this example, the auxiliary pattern 12 is also arranged apart from the main pattern 11 . Further, the auxiliary patterns 12 are preferably arranged so that the center of gravity G of the auxiliary patterns 12 is located in the intersection area 16 , and more preferably, the auxiliary patterns 12 are arranged in the intersection area 16 . Furthermore, the intersection area 16 is not necessarily a rectangle, but may also be a parallelogram. In addition, in the arrangement example of FIG. 6 , two rectangular auxiliary patterns 12 are arranged so as to be spaced apart from each other in one intersecting region 16 . Here, the two auxiliary patterns 12 are not arranged at positions equidistant from the vertexes of the corners of the two closest main patterns 11 in the X direction, respectively. That is, the center of gravity G of the auxiliary pattern 12 is oriented toward the center position of the straight line connecting the corners (acute-angled corners and obtuse-angled corners) of the two main patterns 11 adjacent to the auxiliary pattern 12 in the X direction toward the center of the line having an acute angle. The side of the corner is slightly offset and arranged. The offset amount is U (μm) toward the corner of the acute angle in the X direction. Thereby, the auxiliary pattern 12 brings the main pattern 11 with the acute-angled corner from a closer distance than the main pattern 11 with the obtuse-angled corner among the corners of the two main patterns 11 close to it. optical effects. However, in the case of shifting the position of the auxiliary pattern 12, it is also preferable that the center of gravity G of the auxiliary pattern 12 is located in the intersection area 16 (more preferably, the auxiliary pattern 12 is located in the intersection area 16), and preferably Also in this range, the auxiliary pattern 12 is shifted toward the corner of the acute angle in the X direction. Furthermore, when the auxiliary patterns 12 are arranged in the intersection region 16 so that the center of gravity G of the auxiliary patterns 12 is located in the intersection region 16 as described above, the number of auxiliary patterns 12 arranged in one intersection region 16 is not equal. It is particularly limited, but preferably 1 to 4 pieces are suitable. In addition, the number of the auxiliary patterns 12 arranged in one intersection area 16 is preferably an even number, and preferably two or four. More preferably, it is 2 pieces. In this case, as shown in FIG. 4 , the number of auxiliary patterns 12 per unit pattern (here, SP unit pattern) 14 or the number of auxiliary patterns 12 per main pattern 11 is the same. Here, it can be expressed as a pattern design in which each unit pattern 14 has two auxiliary patterns 12 . Alternatively, one auxiliary pattern 12 is arranged at the corner of the two adjacent main patterns 11 in the X direction. In other words, the two auxiliary patterns 12 are arranged on the four corners defining the intersecting region 16 in FIG. 5 , and this affects the transfer of the corners. However, it is not limited to this, and one auxiliary pattern 12 may be arranged in one corner. Moreover, as shown in FIGS. 5 and 6 , the auxiliary pattern 12 has a size of H1 (μm) in the X direction and a size of H2 (μm) in the Y direction. The dimensions H1 (μm) and H2 (μm) of the auxiliary pattern 12 are preferably 1≦H1≦S1, 1≦H2<0.5×S2. The preferable ranges of H1 (μm) and H2 (μm) are, for example, 1≦H1≦6, 1≦H2≦3. In addition, the distance V (μm) between the auxiliary pattern 12 and the main pattern 11 in the Y direction is preferably 0≦V<0.5×S2-H2, more preferably 0.5≦V<0.5×S2-H2, and more preferably 0.5 ≦V＜0.25×S2－0.5×H2. In addition, in the above-mentioned FIG. 4 , FIG. 5 and FIG. 6 , the plurality of auxiliary patterns 12 are all illustrated as having the same shape, but the plurality of auxiliary patterns 12 may not necessarily have the same shape. For example, when one unit pattern 14 includes a plurality of auxiliary patterns 12, the plurality of auxiliary patterns 12 may be different in shape or size. In addition, when the pattern for transfer of the photomask is transferred onto the transfer target body by proximity exposure, the auxiliary pattern 12 is not resolved on the transfer target body. That is, the auxiliary pattern 12 does not form an independent transfer image during the proximity exposure. The reason for this is that the auxiliary pattern 12 has a small size, which is smaller than the size that can be resolved for the light transmittance of the auxiliary pattern 12 . In addition, the auxiliary pattern 12 participates in the diffraction of the exposure light generated in the proximity gap during the above-mentioned proximity exposure. In addition, in the conventional photomask, in the transfer image (optical image) of the main pattern, it was found that the corners were curved due to the diffraction of light, and the effective area ratio tended to decrease, but the auxiliary pattern 12 suppressed this. tendency. In the simulation of the present inventors, it was also found that when the transfer pattern without the auxiliary pattern 12 was used, the corner tips of the main pattern in the optical image were missing, or the outer edge of the main pattern shifted to the inside ( BM width becomes larger) tendencies, but these tendencies are suppressed when the pattern for transfer having the auxiliary pattern 12 is used. As a result, in the case of having the auxiliary pattern 12, compared with the case of not having the auxiliary pattern 12, among the transfer images (optical images) when the optical image of the pattern for transfer is formed on the object to be transferred The effective area ratio of the main pattern becomes high. The effective area ratio refers to the effective area ratio of the main pattern in the transfer image (optical image) corresponding to one unit pattern. Here, the effective area ratio is a closed curve of a contour line corresponding to a threshold value of light intensity for opening formation of CF in a transfer image (optical image) formed by exposing a transfer pattern to a transfer object. area ratio inside. Therefore, increasing the above-mentioned effective area ratio increases the CF aperture ratio. For example, in the transfer image transferred to the transfer target body, the effective area ratio of the main pattern 11 in one unit pattern 14 is 47% or more, preferably 50% or more, and more preferably 52% or more. This means that in the LCD manufactured using the photomask of the embodiment of the present invention, it will contribute to the performance of higher aperture ratio, brighter image, or lower power consumption. Furthermore, as is clear from the above description, the "pattern for transfer" in the present invention refers to a pattern that is subjected to exposure light for transfer, including an auxiliary pattern that is not independently resolved on the object to be transferred. Irradiate to form the pattern of the mask of the light intensity distribution on the transferred body. It is preferable that the pattern for transfer can form a three-dimensional structure (for example, BM) by being transferred to a negative photosensitive material formed on a to-be-transferred body (for example, a CF substrate). Moreover, in addition to this, the pattern for transcription|transfer can also form the complicated three-dimensional shape which adds another function (for example, a photosensitive spacer etc.) to BM. The photomask of the present invention is exposed by an exposure apparatus (proximity exposure apparatus) of a proximity exposure method. In this exposure apparatus, the collimation angle (degree) can be set to about 0.5 to 2.5, more preferably about 1.0 to 2.0. The proximity gap in proximity exposure is set according to the size of the reticle. In the present invention, when the proximity gap is set to, for example, a gap of about 30 to 200 μm, preferably about 40 to 100 μm, the effect is remarkable. Moreover, it is preferable to use the light in the wavelength range of 300-450 nm as exposure light, and the light of a single wavelength, or the light which has a wide wavelength range can be used. In addition, as a light source for exposure, any one of i-line, h-line, and g-line, or a light source including all of them can be preferably used. As the materials of the first to third transmission control films to which the photomask of the present invention is applied, known materials can be used. For example, when any of the transmission control films is a light-shielding film that does not substantially transmit exposure light, it can be a film containing Cr, Ta, Zr, Si, Mo, etc., and can be obtained from these monomers or compounds ( An appropriate one is selected from among oxides, nitrides, carbides, oxynitrides, carbonitrides, carbon oxynitrides, etc.). In particular, Cr or a compound of Cr can be preferably used. Moreover, as a material of a transmission control film, a transition metal silicide (MoSi etc.), or its compound can be used. Examples of the transition metal silicide compound include oxides, nitrides, oxynitrides, carbon oxynitrides, and the like, and preferred examples thereof include MoSi oxides, nitrides, oxynitrides, carbon oxynitrides, and the like. Also, for example, when the first transmission control film and the second transmission control film are made of the same material, and each transmission control film is made of a light-shielding film, the film material selected from the above is applied to the film. Just wait. Moreover, when any one of the 1st to 3rd transmission control films is used as a film (semi-transparent film) that transmits a part of the exposure light, the film material can be made to contain, for example, Cr, Ta, Zr , Si, Mo, etc., and suitable ones can be selected from these compounds (oxides, nitrides, carbides, oxynitrides, carbonitrides, carbon oxynitrides, etc.). In particular, compounds of Cr can be preferably used. As other semi-transparent film materials, Si compounds (SiON, etc.), transition metal silicides (MoSi, etc.), or compounds thereof can be used. Examples of the transition metal silicide compound include oxides, nitrides, oxynitrides, carbon oxynitrides, and the like, and preferred examples thereof include MoSi oxides, nitrides, oxynitrides, carbon oxynitrides, and the like. Moreover, when making a 1st transmission control film into a light-shielding film, and making a 2nd transmission control film into a semi-transparent film, for example, the material which has resistance to the mutual etchant can be selected. For example, a material containing Cr can be used for the first permeation control film, and a material containing Si can be used for the second permeation control film. In addition, the film materials of the plurality of transmission control films in the first to third transmission control films are set as materials that can be etched by a common etchant (for example, a film containing Cr), and the same material as the film can also be used as needed. An etch stop film with etch selectivity between materials. Details will be described below. In addition, in connection with the above, the photomask substrate for obtaining the photomask of the present invention can be set to any one of the following configurations (1) to (3). (1) A photomask base with a light-shielding film is formed on a transparent substrate. (2) A photomask base having a semi-transparent film and a light-shielding film with etching selectivity thereon are sequentially laminated on the transparent substrate. (3) On the transparent substrate, a semi-transparent film and a light-shielding film that can be etched with a common etchant are laminated, and an etching film with the same etchant is provided in the middle (between the semi-transparent film and the light-shielding film). Photomask substrate for selective etch stop film. In addition, the photomask of the present invention may further include other optical films (for example, films for controlling light transmittance, reflectivity, and phase characteristics of exposure), or functional films (for example, for film for charge control, etching control, etc.), or a film pattern obtained from these. <The manufacturing method of a photomask> Next, the manufacturing method of the photomask which concerns on embodiment of this invention is demonstrated. The photomask of the above-mentioned constitution can be manufactured by the method described below. (Preparation step of mask substrate) First, the mask substrate 20 shown in FIG. 7( a ) is prepared. The mask base 20 is formed by sequentially laminating a second transmission control film 22 and a third transmission control film 23 on a transparent substrate 21 , and further laminating a resist film 24 on the third transmission control film 23 . The transparent substrate 21 can be formed using a transparent material such as quartz glass. The size or thickness of the transparent substrate 21 is not limited. As long as the mask base 20 is used for a manufacturer of a display device, a transparent substrate 21 having a quadrangular main surface with a length of one side of 300 to 1800 mm and a thickness of about 5 to 16 mm can be used. The second transmission control film 22 is preferably a film containing Si, and can be selected from Si compounds (SiON, etc.) or MSi (M is a metal such as Mo, Ta, Ti, etc.) or compounds (oxide, nitride, oxynitride, carbon, etc.) oxynitride, etc.) to select the appropriate film material. Here, as an example, the second transmission control film 22 is a semi-transparent film. Moreover, the transmittance T2 of the 2nd transmission control film 22 with respect to the light of the representative wavelength of exposure light is made into 40%, for example. The third transmission control film 23 is a film mainly composed of Cr (Cr or compounds such as oxides, nitrides, carbides, oxynitrides, carbon oxynitrides, and the like). That is, the 2nd transmission control film 22 and the 3rd transmission control film 23 are made into the film|membrane which has mutual etching selectivity which is resistant to each other. Here, as an example, the third transmission control film 23 is a light-shielding film. The resist film 24 can be formed using an EB (electron beam) resist, a photoresist, or the like. Here, a photoresist is used as an example. The resist film 24 can be formed by coating a photoresist on the third transmission control film 23 . The photoresist can be either positive type or negative type, but it is assumed that a positive type photoresist is used here. (Drawing Step) Next, as shown in FIG. 7( b ), a desired pattern is drawn on the resist film 24 using a drawing device. An electron beam, a laser beam, or the like can be used as the energy line for drawing. Here, as an example, drawing is performed using a laser beam (wavelength: 410 to 420 nm) of a laser plotter. In this drawing process, drawing is performed so that a dose (Dose) is not applied to the area 24a corresponding to the main pattern 11, and a dose is applied to the areas 24b and 24c corresponding to the auxiliary pattern 12 and the slit portion 13. In addition, the drawing of the region 24b corresponding to the auxiliary pattern 12 is performed with a relatively low dose of irradiation, and the drawing of the region 24c corresponding to the slit portion 13 is performed with a relatively high dose, that is, a higher dose than the auxiliary pattern 12. Irradiation proceeds. Thereby, the dose of the region 24a corresponding to the main pattern 11 becomes substantially zero. In addition, the dose of the region 24b corresponding to the auxiliary pattern 12 is smaller than the dose of the region 24c corresponding to the slit portion 13 . (Development Step) Next, as shown in FIG. 7( c ), the resist film 24 of the photomask substrate 20 after the above-described drawing step is developed is developed. Thereby, on the third transmission control film 23, a resist pattern 24p having a plurality of types of residual film thicknesses according to the above-mentioned difference in dose is formed. That is, in the resist pattern 24p, the resist residual film thickness of the region 24b corresponding to the auxiliary pattern 12 is smaller than the resist residual film thickness of the region 24a corresponding to the main pattern 11. In addition, in the region 24c corresponding to the slit portion 13, no resist remains, and the surface of the third transmission control film 23 is exposed. (1st etching process) Next, as shown in FIG.8(d), wet etching is performed using the resist pattern 24p as a mask. In this wet etching, the third transmission control film 23 and the second transmission control film 22 are sequentially etched and removed, thereby exposing the surface of the transparent substrate 21 in the region 24c corresponding to the slit portion 13 . Here, since the third transmission control film 23 and the second transmission control film 22 are films having etching selectivity to each other, an appropriate wet etchant is sequentially applied according to the respective film materials. (Resist film reduction step) Next, as shown in FIG. 8( e ), the new surface of the third transmission control film 23 is exposed on the surface corresponding to the auxiliary pattern 12 by reducing the resist pattern 24p by a specific thickness. area 24b. The film reduction of the resist pattern 24p is performed by the process of oxidizing the surface of the resist pattern 24p, and reducing the film thickness uniformly. For this treatment, plasma ashing, ozone water treatment, or the like can be applied. (Second etching step) Next, as shown in FIG. 8( f ), using the resist pattern 24p after the film reduction in the above-mentioned resist film reduction step as a mask, the above-mentioned newly exposed third transmission control film 23 is subjected to etching. Thereby, the surface of the second transmission control film 22 is exposed in the region 24b corresponding to the auxiliary pattern 12 . (Resist stripping step) Next, as shown in FIG. 8(g), the resist pattern 24p is stripped. Thereby, on the transparent substrate 21 , the main pattern 11 including the laminated film having the third transmission control film 23 laminated on the second transmission control film 22 is formed, and the single film including the second transmission control film 22 is formed. Auxiliary pattern 12. In addition, the laminated|multilayer film of the structure which laminated|stacked the 3rd permeation control film 23 on the 2nd permeation control film 22 corresponds to a 1st permeation control film. The photomask of the present invention is completed by the above manufacturing method. According to this manufacturing method, a pattern for transfer including the main pattern 11 and the auxiliary pattern 12 is formed by sequentially etching the two optical films of the third transmission control film 23 and the second transmission control film 22 . The pattern for transfer is obtained by applying only one drawing step. Thereby, multiple drawing steps are not required, so the occupation time of the drawing device can be shortened, and the production efficiency can be improved. Furthermore, in this manufacturing method, there is no misalignment of the third transmission control film 23 and the second transmission control film 22 (for example, about 0.2 to 0.5 μm), which is caused by a plurality of times of drawing. Therefore, the size of each part of the pattern for transfer, that is, a photomask with a high precision CD (Critical Dimension, critical dimension) can be obtained. Especially in the photomask of the present invention, the positional accuracy of the main pattern 11 and the auxiliary pattern 12 is important, so it is advantageous to apply the above-mentioned manufacturing method to the manufacture of the photomask in order to obtain excellent CD accuracy. Next, the method of manufacturing the photomask of this invention using the photomask base which has an etching stopper film between a 2nd transmission control film and a 3rd transmission control film is demonstrated. (Preparation Step of Mask Base) First, the mask base 20 shown in FIG. 9( a ) is prepared. The mask base 20 is formed by sequentially laminating a second transmission control film 22 , an etching stopper film 25 and a third transmission control film 23 on a transparent substrate 21 , and then a positive type resist is laminated on the third transmission control film 23 formed by etching the film 24 . The transparent substrate 21 can be formed using a transparent material such as quartz glass. The size or thickness of the transparent substrate 21 is not limited. As long as the mask substrate 20 can be used for a manufacturer of a display device, a transparent substrate 21 having a quadrangular main surface with a length of one side of 300 to 1800 mm and a thickness of about 5 to 16 mm can be used. The second transmission control film 22 is a film containing a compound of Cr (a material selected from oxides, nitrides, carbides, oxynitrides, carbon oxynitrides, etc.), and is set to be relative to the representative wavelength of the exposure light. The translucent film with transmittance T2 of 40%. The etching stopper film 25 can be a film containing Si, and can be made from Si compounds (SiON, etc.) or MSi (M is a metal such as Mo, Ta, Ti, etc.) or its compounds (oxide, nitride, oxynitride, carbon oxynitride, etc.) Select the appropriate film material from the compound, etc.). The third transmission control film 23 is a film containing Cr compounds (oxides, nitrides, carbides, oxynitrides, carbon oxynitrides, etc.), and serves as a light shielding film. That is, the 2nd transmission control film 22 and the 3rd transmission control film 23 contain the film material which can be etched with the mutually same etchant. On the other hand, the etching stopper film 25 includes a material having etching selectivity with respect to the second transmission control film 22 and the third transmission control film 23 . (Drawing Step) Next, as shown in FIG. 9( b ), the resist film 24 is drawn using a laser plotter. At this time, drawing is performed so that the dose is not applied to the region 24a corresponding to the main pattern 11, but is applied to the regions 24b and 24c corresponding to the auxiliary pattern 12 and the slit portion 13. In addition, the drawing of the region 24b corresponding to the auxiliary pattern 12 is performed with a relatively low dose of irradiation, and the drawing of the region 24c corresponding to the slit portion 13 is performed with a relatively high dose, that is, the irradiation of a higher dose than the auxiliary pattern 12. . Thereby, the dose of the region 24a corresponding to the main pattern 11 becomes substantially zero. In addition, the dose of the region 24b corresponding to the auxiliary pattern 12 is smaller than the dose of the region 24c corresponding to the slit portion 13 . (Development Step) Next, as shown in FIG. 9( c ), the resist film 24 of the photomask substrate 20 after the above-mentioned drawing step has been completed is developed. Thereby, on the third transmission control film 23, a resist pattern 24p having a plurality of types of residual film thicknesses according to the above-mentioned difference in dose is formed. That is, in the resist pattern 24p, the resist residual film thickness of the region 24b corresponding to the auxiliary pattern 12 is smaller than the resist residual film thickness of the region 24a corresponding to the main pattern 11. In addition, in the region 24c corresponding to the slit portion 13, no resist remains, and the surface of the third transmission control film 23 is exposed. (1st etching process) Next, as shown in FIG.10(d), wet etching is performed using the resist pattern 24p as a mask. In this wet etching, the third transmission control film 23 , the etching stopper film 25 , and the second transmission control film 22 are sequentially etched and removed, thereby exposing the surface of the transparent substrate 21 in the region corresponding to the slit portion 13 . 24c. Here, the third transmission control film 23 and the etching stopper film 25 are films having etching selectivity with each other, and the second transmission control film 22 and etching stopper film 25 are also films having etching selectivity with each other. Therefore, the wet etchant is applied in sequence with respect to the respective film materials as appropriate. (Resist film reduction step) Next, as shown in FIG. 10( e ), the new surface of the third transmission control film 23 is exposed on the surface corresponding to the auxiliary pattern 12 by reducing the resist pattern 24p by a specific thickness. area 24b. The film reduction of the resist pattern 24p is performed by a process of oxidizing the surface of the resist pattern 24p and uniformly reducing the film thickness. For this treatment, plasma ashing, ozone water treatment, or the like can be applied. (Second Etching Step) Next, as shown in FIG. 10(f), the above-mentioned newly exposed third transmission control film 23 is etched using the resist pattern 24p after the film reduction in the above-mentioned resist film reduction step as a mask , and then, the etching stopper film 25 is etched. Thereby, the surface of the second transmission control film 22 is exposed in the region 24b corresponding to the auxiliary pattern 12 . Furthermore, it is necessary to adjust the optical properties of the film, but the etching stopper film 25 may be left without removing it, and the etching stopper film 25 and the second transmission control film 22 may be laminated to be used as the above-mentioned "second transmission". Control Membrane". (Resist stripping step) Next, as shown in FIG. 10( g ), the resist pattern 24p is stripped. Thereby, on the transparent substrate 21, the main pattern 11 including the laminated film composed of the etching stopper film 25 and the third transmission control film 23 laminated on the second transmission control film 22 is formed, and the second transmission control film is formed. Auxiliary pattern 12 of a single film of 22. In addition, the laminated|multilayer film which laminated|stacked the etching stopper film 25 and the 3rd transmission control film 23 on the 2nd transmission control film 22 corresponds to a 1st transmission control film. The photomask of the present invention is completed by the above manufacturing method. According to this manufacturing method, the same advantages as those of the above-mentioned manufacturing method can be obtained. That is, a transfer pattern including the main pattern 11 and the auxiliary pattern 12 is formed by sequentially etching the third transmission control film 23 and the second transmission control film 22, the two optical films together with the etching stopper film 25. The pattern for transfer is obtained by applying only one drawing step. Thereby, multiple drawing steps are not required, so the occupation time of the drawing device can be shortened, and the production efficiency can be improved. Furthermore, in this manufacturing method, there is no misalignment of the third transmission control film 23 and the second transmission control film 22 (for example, about 0.2 to 0.5 μm), which is caused by a plurality of times of drawing. Therefore, the size of each part of the pattern for transfer, that is, a photomask with high CD accuracy can be obtained. Especially in the photomask of the present invention, the positional accuracy of the main pattern 11 and the auxiliary pattern 12 is important, so it is advantageous to apply the above-mentioned manufacturing method to the manufacture of the photomask in order to obtain excellent CD accuracy. Furthermore, the present invention can also be implemented as a method of manufacturing a display device. In this case, the manufacturing method of a display device is a method including the steps of preparing a photomask having the above-mentioned structure; . Moreover, in the photomask or its manufacturing method of the embodiment of the present invention, the main pattern 11 and the auxiliary pattern 12 may be films made of the same material or films made of different materials. Moreover, in the case where the main pattern 11 and the auxiliary pattern 12 are films made of different materials from each other, in the method of manufacturing the photomask of the present invention, the drawing step may be performed only once. In this case, the alignment of the main pattern 11 and the auxiliary pattern 12 in the manufacturing process can be finely controlled. Furthermore, as described above, the linear distances (not shown, for example, set to K1 and K2 ) from the corners of the two main patterns 11 to the center of gravity G of the auxiliary patterns 12 can be exactly equal. For example, K1-K2 can be set to <0.1 μm. In addition, according to the design of the liquid crystal display device, etc., the intersection of BM is not limited to vertical (90 degrees), and there is a lattice shape inclined at an angle of about 45 to 135 degrees, and the shape of the pixel is not limited to a rectangle, and there are parallelograms. Or the case of a shape formed by connecting a plurality of them. In addition, there may be cases where any one of the R, G, and B sub-pixels included in one pixel has a shape or size different from that of the others, and the present invention can also effectively exert effects for such a pattern design. <Example> Hereinafter, the evaluation result by which the transfer image formed on the to-be-transferred body using the photomask of this invention by simulation is shown as an Example, and is shown together with a reference example. (Reference example) In the simulation, first, the reference pattern shown in FIG. 11 was set as the main pattern 11, and the optical image at the time of exposing it was acquired. The main pattern 11 is a parallelogram, and among its corners, the acute angle side has an angle of 75 degrees, and the obtuse angle side has an angle of 105 degrees. In the reference example, only the main pattern 11 is used, and in the embodiment, the auxiliary pattern 12 is added to the main pattern 11 . Next, the reference example is compared with the example. In addition, the pattern size is as follows according to the current situation of CF having a thin line width of 4.5 to 6 μm in a part of BM, which is expected as a market trend. Furthermore, the following widths S1, S2, and pitches P1, P2 are described with reference to FIGS. 4 to 6 . The width of the first slit portion S1 = 5 μm The width of the second slit portion S2 = 18 μm The distance in the X direction P1 = 18 μm The distance in the Y direction P2 = 54 μm The pattern of this size is, for example, a liquid crystal display device equivalent to 470 ppi of fine patterns. The simulation conditions are as follows. When a proximity exposure device (collimation angle of 1.5 degrees) was used to change the proximity gap (Gap) in the range of 50 to 100 μm, the transfer image formed on the transfer object was obtained. The wavelength of the exposure light was set to 365 nm (i-line). 12 to 14 show the optical images formed on the transfer object according to the reference pattern of the reference example ( FIG. 11 ). Fig. 12(a) is the case of Gap=50 μm, Fig. 12(b) is the case of Gap=60 μm, Fig. 13(a) is the case of Gap=70 μm, Fig. 13(b) is the case of Gap=80 μm 14(a) is the case of Gap=90 μm, and FIG. 14(b) is the case of Gap=100 μm. The contour lines and the shades of colors in the optical image in the figure refer to the distribution of light intensity in the optical image. The types of light intensity of the optical image are described in FIG. 11 . In the simulation results of the reference example, it can be seen that even with a small gap (50 μm), the corners tend to be rounded or the corner tips are chipped, and as the gap increases, the tendencies become more intense. (Example 1) In Example 1, the same reference pattern as the above-mentioned reference example was set as the main pattern 11, and the auxiliary pattern 12 shown in FIG. 15 was added to the main pattern 11. The auxiliary pattern 12 is a rectangle with a long side of X=2.5 μm and a short side of Y=1.5 μm, and is arranged at a distance of V=2.0 μm from the main pattern 11 in the Y direction. In addition, the center of gravity G of the auxiliary pattern 12 is set to a position shifted by U=0.5 μm toward the corner of the acute angle from the center position of the straight line connecting the corners of the adjacent main patterns 11 . Moreover, the auxiliary pattern 12 is formed by the light-shielding film which does not transmit the exposure light substantially. The optical images when the auxiliary pattern 12 shown in the above-mentioned FIG. 15 is introduced are shown in FIGS. 16 to 18 . Fig. 16(a) is the case of Gap=50 μm, Fig. 16(b) is the case of Gap=60 μm, Fig. 17(a) is the case of Gap=70 μm, Fig. 17(b) is the case of Gap=80 μm 18(a) is the case of Gap=90 μm, and FIG. 18(b) is the case of Gap=100 μm. From this result, in Example 1, compared with the case of the reference example ( FIG. 11 ), it was confirmed that the shape deterioration of the corners of the main pattern 11 was suppressed, and even the corners of the corners had less deterioration of the shape of the main pattern. . In particular, it was confirmed that the area of the area representing 50% or more of the light intensity of the optical image (in each of the optical images shown in Fig. 16 to Fig. 18, within the third contour line from the lighter color) was larger than that in Figs. The reference example shown in FIG. 14 has a relatively large area. Therefore, according to Example 1, the effective opening of the CF can be made larger than that of the reference example by selecting an appropriate light intensity for exposure. (Example 2) In Example 2, the same reference pattern as the above-mentioned reference example was set as the main pattern 11, and the auxiliary pattern 12 shown in FIG. 19 was added to the main pattern 11. The auxiliary pattern 12 is a rectangle whose long side is X=5.5 μm and the short side is Y=2.0 μm, and is arranged at a distance of V=1.0 μm from the main pattern 11 in the Y direction. In addition, the center of gravity G of the auxiliary pattern 12 is set to a position shifted by U=0.5 μm toward the corner of the acute angle from the center position of the straight line connecting the corners of the adjacent main patterns 11 . In addition, the auxiliary pattern 12 is formed by a semi-transparent film whose transmittance T to exposure light (i-line) is 40%. The optical images when the auxiliary pattern 12 shown in the above-mentioned FIG. 19 is introduced are shown in FIGS. 20 to 22 . Fig. 20(a) is the case of Gap=50 μm, Fig. 20(b) is the case of Gap=60 μm, Fig. 21(a) is the case of Gap=70 μm, Fig. 21(b) is the case of Gap=80 μm 22(a) is the case of Gap=90 μm, and FIG. 22(b) is the case of Gap=100 μm. From this result, in Example 2, it was confirmed that the shape deterioration of the corner part of the main pattern 11 was suppressed similarly to the said Example 1. Moreover, compared with the said Example 1, in the case of Example 2, it turns out that the contour line in the vicinity of the corner part of the main pattern 11 becomes "dense". This means that the tolerance of the pattern CD with respect to the variation of the exposure amount is larger. Furthermore, it can be seen that in the case of Example 2, the improved corner shape can be obtained by applying a wider range of light intensity during exposure, so that stable transferability can be ensured, and yield can also be improved. . In addition, in Example 1 and Example 2, the auxiliary pattern 12 itself was not transcribe|transferred as a resolution pattern. This means that the auxiliary pattern 12 has a size that is not resolved on the transferred body by exposure according to its transmittance (including the case where it is substantially zero). In addition, in Examples 1 and 2, as shown in the above-mentioned FIGS. 15 and 19 , a rectangular pattern was used as the auxiliary pattern 12 . On the other hand, when a parallelogram pattern having acute and obtuse corners is used as the auxiliary pattern 12 as in the above-described main pattern 11, the improvement tendency of the obtained optical image is approximately the same as when a rectangular pattern is used. . (Comparison of Effective Area Ratios of Optical Images) Based on the above simulation results, optical images corresponding to the aperture ratios of the obtained sub-pixels were obtained when the optical images of Reference Example, Example 1, and Example 2 were formed on the CF substrate. Like the effective area ratio. Here, as shown in FIG. 23 , the effective area ratio refers to the SP unit pattern area (P1×P2) in the pattern for transfer of the mask as the denominator, and FIGS. 12 to 14 , 16 to 18 , and The area surrounded by the contour lines shown in 20 to 22 is calculated as the numerator. Furthermore, when there is a phenomenon that a part of the contour line is connected to the contour line of an adjacent sub-pixel (this phenomenon corresponds to the broken line of the BM), the sub-pixel is excluded from the calculation. FIG. 24 is a graph plotting the relationship between the light intensity in the optical image and the effective area ratio when the proximity gap is set to 70 μm. 24 , when the light intensity is set to 50% or more, Example 1 (the auxiliary pattern formed by the light shielding film) exhibits a higher effective area ratio than the Reference Example (without the auxiliary pattern), which is advantageous. Furthermore, it became clear that when Example 2 (the auxiliary pattern formed by the semi-transparent film) was used, the effective area ratio was higher than that of the reference example in a wide range of light intensity of 40 to 60%. It should be noted that this calculation is performed when the proximity gap is set to 70 μm, but almost the same tendency is seen even when the proximity gap is changed. Also, the average values of the effective area ratios of the sub-pixels in Reference Example, Example 1, and Example 2 (except for the sub-pixels with BM-disconnected lines) are shown in the table in FIG. 23, and Example 2 is the highest and most favorable value. . It is the average value of the effective area ratio obtained in all cases where the light intensity of the optical image is surrounded by contour lines with a light intensity of 60% or less, and in all cases where the proximity gap is 50 to 100 μm. Furthermore, when the light intensity corresponding to the transfer image is high (for example, 60% or more), and the proximity gap becomes large (for example, 90 μm or more), the risk of disconnection gradually increases. However, in Examples 1 and 2 using the auxiliary pattern, there is no tendency to increase the risk compared with the reference example. As is clear from the above, the mask of the present invention is characterized in that, when the optical image of the pattern for transfer is formed on the object to be transferred by exposure by a proximity exposure device, the main pattern in the optical image is The effective area ratio is larger than the effective area ratio of the main pattern in the optical image formed by the same exposure conditions using the pattern for transfer without the auxiliary pattern. However, although the introduction of the semi-transparent auxiliary pattern brings about the above-mentioned excellent effects, it is not good to prolong the production steps of the mask for this purpose. Generally, BM fabrication must be performed in the first half of the production step of the CF substrate, and it is advantageous to perform this process in a short period of time. This point is also significant for the above-mentioned manufacturing method to which the present invention is applied.

1‧‧‧像素2‧‧‧子像素3‧‧‧黑矩陣4‧‧‧光罩圖案5‧‧‧圖案6‧‧‧圖案7‧‧‧圖案11‧‧‧主圖案11a‧‧‧角部12‧‧‧輔助圖案13‧‧‧狹縫部13a‧‧‧第1狹縫部13b‧‧‧第2狹縫部14‧‧‧SP單位圖案15‧‧‧P單位圖案16‧‧‧交叉區域20‧‧‧光罩基底21‧‧‧透明基板22‧‧‧第2透過控制膜23‧‧‧第3透過控制膜24‧‧‧抗蝕膜24a‧‧‧區域24b‧‧‧區域24c‧‧‧區域24p‧‧‧抗蝕圖案25‧‧‧蝕刻阻止膜G‧‧‧重心H1‧‧‧X方向之尺寸H2‧‧‧Y方向之尺寸M1‧‧‧寬度M2‧‧‧長度P1‧‧‧X方向之間距P2‧‧‧Y方向之間距S1‧‧‧寬度S2‧‧‧寬度U‧‧‧偏移量V‧‧‧距離X‧‧‧長邊長度Y‧‧‧短邊長度1‧‧‧Pixel 2‧‧‧Sub-pixel 3‧‧‧Black matrix 4‧‧‧Mask pattern 5‧‧‧Pattern 6‧‧‧Pattern 7‧‧‧Pattern 11‧‧‧Main pattern 11a‧‧‧corner Part 12‧‧‧Auxiliary pattern 13‧‧‧Slit part 13a‧‧‧First slit part 13b‧‧‧Second slit part 14‧‧‧SP unit pattern 15‧‧‧P unit pattern 16‧‧‧Intersection area 20 ‧‧‧Resistant film 21‧‧‧Transparent substrate 22‧‧‧Second transmission control film 23‧‧‧Third transmission control film 24‧‧‧Resist film 24a‧‧‧Region 24b‧‧‧Region 24c‧‧ ‧Region 24p‧‧‧Resist pattern 25‧‧‧Etch stop film G‧‧‧Centre of gravity H1‧‧‧Dimension H2 in X direction‧‧‧Dimension in Y direction M1‧‧‧Width M2‧‧‧Length P1‧‧ ‧Spacing in X direction P2‧‧‧ Spacing in Y direction S1‧‧‧Width S2‧‧‧Width U‧‧‧Offset V‧‧‧Distance X‧‧‧Length of long side Y‧‧‧Length of short side

圖1係表示既有之彩色濾光片之圖案之一例之模式圖。 圖2(a)、(b)係例示用以製造既有之彩色濾光片中使用之黑矩陣之光罩圖案之模式圖，(a)表示微細化前，(b)表示微細化後。 圖3(a)係表示理想的彩色濾光片之圖案之模式圖，(b)係表示實際獲得之彩色濾光片之圖案之模式圖。 圖4係表示本發明之實施形態之光罩所具備之轉印用圖案之一例之俯視圖。 圖5係表示輔助圖案之配置例之俯視圖(其1)。 圖6係表示輔助圖案之配置例之俯視圖(其2)。 圖7(a)～(c)係說明本發明之實施形態之光罩之製造方法之一例之步驟圖(其1)。 圖8(d)～(g)係說明本發明之實施形態之光罩之製造方法之一例之步驟圖(其2)。 圖9(a)～(c)係說明本發明之實施形態之光罩之製造方法之另一例之步驟圖(其1)。 圖10(d)～(g)係說明本發明之實施形態之光罩之製造方法之另一例之步驟圖(其2)。 圖11係說明參考例之主圖案之圖。 圖12(a)、(b)係表示參考例之轉印像(光學像)之模擬結果之圖(其1)。 圖13(a)、(b)係表示參考例之轉印像(光學像)之模擬結果之圖(其2)。 圖14(a)、(b)係表示參考例之轉印像(光學像)之模擬結果之圖(其3)。 圖15係說明本發明之實施例1之主圖案與輔助圖案之圖。 圖16(a)、(b)係表示本發明之實施例1之轉印像(光學像)之模擬結果之圖(其1)。 圖17(a)、(b)係表示本發明之實施例1之轉印像(光學像)之模擬結果之圖(其2)。 圖18(a)、(b)係表示本發明之實施例1之轉印像(光學像)之模擬結果之圖(其3)。 圖19係說明本發明之實施例2之主圖案與輔助圖案之圖。 圖20(a)、(b)係表示本發明之實施例2之轉印像(光學像)之模擬結果之圖(其1)。 圖21(a)、(b)係表示本發明之實施例2之轉印像(光學像)之模擬結果之圖(其2)。 圖22(a)、(b)係表示本發明之實施例2之轉印像(光學像)之模擬結果之圖(其3)。 圖23係表示光學像之有效面積率之算出方法與算出結果之圖。 圖24係對近接間隙設為70 μm時之光學像中之光強度與有效面積率之關係進行繪製之圖。FIG. 1 is a schematic diagram showing an example of the pattern of a conventional color filter. 2(a) and (b) are schematic diagrams illustrating a mask pattern for producing a black matrix used in an existing color filter, (a) shows before miniaturization, and (b) shows after miniaturization. Fig. 3(a) is a schematic diagram showing an ideal color filter pattern, and (b) is a schematic diagram showing an actually obtained color filter pattern. FIG. 4 is a plan view showing an example of the pattern for transfer included in the photomask according to the embodiment of the present invention. FIG. 5 is a plan view (No. 1) showing an example of arrangement of auxiliary patterns. FIG. 6 is a plan view (No. 2 ) showing an example of arrangement of auxiliary patterns. FIGS. 7( a ) to ( c ) are step diagrams (Part 1) illustrating an example of a method for manufacturing a photomask according to an embodiment of the present invention. FIGS. 8(d) to (g) are step diagrams (Part 2) for explaining an example of the method of manufacturing the photomask according to the embodiment of the present invention. FIGS. 9( a ) to ( c ) are step diagrams (Part 1 ) for explaining another example of the method for manufacturing the photomask according to the embodiment of the present invention. FIGS. 10(d) to (g) are step diagrams (Part 2) illustrating another example of the method for manufacturing the photomask according to the embodiment of the present invention. FIG. 11 is a diagram illustrating a main pattern of a reference example. FIGS. 12( a ) and ( b ) are graphs (Part 1) showing the simulation results of the transfer image (optical image) of the reference example. FIGS. 13( a ) and ( b ) are graphs (No. 2 ) showing the simulation results of the transfer image (optical image) of the reference example. FIGS. 14( a ) and ( b ) are graphs (Part 3) showing the simulation results of the transfer image (optical image) of the reference example. FIG. 15 is a diagram illustrating the main pattern and the auxiliary pattern in Embodiment 1 of the present invention. FIGS. 16( a ) and ( b ) are graphs (Part 1) showing the simulation results of the transfer image (optical image) in Example 1 of the present invention. FIGS. 17( a ) and ( b ) are graphs (Part 2 ) showing the simulation results of the transfer image (optical image) in Example 1 of the present invention. FIGS. 18( a ) and ( b ) are graphs (Part 3 ) showing the simulation results of the transfer image (optical image) of Example 1 of the present invention. FIG. 19 is a diagram illustrating the main pattern and the auxiliary pattern in Embodiment 2 of the present invention. FIGS. 20( a ) and ( b ) are graphs (Part 1 ) showing the simulation results of the transfer image (optical image) of Example 2 of the present invention. FIGS. 21( a ) and ( b ) are graphs (Part 2) showing the simulation results of the transfer image (optical image) in Example 2 of the present invention. 22(a) and (b) are diagrams (Part 3) showing the simulation results of the transfer image (optical image) of Example 2 of the present invention. FIG. 23 is a diagram showing a calculation method and calculation result of the effective area ratio of an optical image. FIG. 24 is a graph plotting the relationship between the light intensity in the optical image and the effective area ratio when the proximity gap is set to 70 μm.

11‧‧‧主圖案 11‧‧‧Main Pattern

11a‧‧‧角部 11a‧‧‧Corner

12‧‧‧輔助圖案 12‧‧‧Auxiliary pattern

13‧‧‧狹縫部 13‧‧‧Slit

13a‧‧‧第1狹縫部 13a‧‧‧First slit

13b‧‧‧第2狹縫部 13b‧‧‧Second slit

14‧‧‧SP單位圖案 14‧‧‧SP unit pattern

15‧‧‧P單位圖案 15‧‧‧P unit pattern

M1‧‧‧寬度 M1‧‧‧Width

M2‧‧‧長度 M2‧‧‧Length

P1‧‧‧X方向之間距 Distance between P1‧‧‧X direction

P2‧‧‧Y方向之間距 P2‧‧‧Spacing in Y direction

S1‧‧‧寬度 S1‧‧‧Width

S2‧‧‧寬度 S2‧‧‧Width

X‧‧‧長邊長度 X‧‧‧Length of long side

Y‧‧‧短邊長度 Y‧‧‧Short side length

Claims (12)

一種光罩，其特徵在於：其係於透明基板上具備用以轉印至被轉印體上之轉印用圖案之近接曝光用光罩，上述轉印用圖案包含：主圖案；及輔助圖案，其於上述主圖案所具有之角部之附近，與上述主圖案相離而配置；且上述主圖案係於上述透明基板上形成第1透過控制膜，上述輔助圖案係於上述透明基板上形成第2透過控制膜，並且具有不會藉由曝光而於上述被轉印體上解像之尺寸，上述第1透過控制膜包含遮光膜，上述第2透過控制膜包含令曝光之光之一部份透過之半透光膜。 A photomask is characterized in that: it is provided with a photomask for proximity exposure on a transparent substrate with a transfer pattern used for transferring to a transfer object, the transfer pattern comprising: a main pattern; and an auxiliary pattern , which is arranged at a distance from the main pattern in the vicinity of the corners of the main pattern; and the main pattern is formed on the transparent substrate to form a first transmission control film, and the auxiliary pattern is formed on the transparent substrate. The second transmission control film has a size that does not resolve on the transfer target body by exposure, the first transmission control film includes a light shielding film, and the second transmission control film includes a portion of light for exposure Partial translucent film. 如請求項1之光罩，其中上述轉印用圖案包含將單位圖案規律地重複排列之重複圖案。 The photomask of claim 1, wherein the pattern for transfer includes a repeating pattern in which unit patterns are regularly and repeatedly arranged. 如請求項1或2之光罩，其中上述輔助圖案具有點形狀或線形狀，且針對每1個上述主圖案而配置複數個。 The photomask according to claim 1 or 2, wherein the auxiliary pattern has a dot shape or a line shape, and a plurality of the auxiliary patterns are arranged for every one of the main patterns. 如請求項1或2之光罩，其中上述主圖案具有被相互平行之一對直線夾著之帶狀之區域。 The photomask of claim 1 or 2, wherein the main pattern has a band-shaped region sandwiched by a pair of straight lines parallel to each other. 如請求項1或2之光罩，其中上述轉印用圖案包含包圍上述主圖案及上述輔助圖案之狹縫部，上述狹縫部具有：帶狀之第1狹縫部，其具有寬度S1(μm)，並於一方向延伸；及第2狹縫部，其具有寬度S2(μm)，並與上述第1狹縫部交叉；且於上述第1狹縫部與上述第2狹縫部交叉之區域，於將以直線連結4個上述主圖案之相對向之4個角部之頂點而形成之四邊形設為交叉區域時，以使上述輔助圖案之重心位於上述交叉區域內之方式而配置上述輔助圖案。 The photomask of claim 1 or 2, wherein the pattern for transfer includes a slit portion surrounding the main pattern and the auxiliary pattern, and the slit portion has: a strip-shaped first slit portion having a width S1 (μm), and extend in one direction; and a second slit portion, which has a width S2 (μm), and intersects with the first slit portion; and in the area where the first slit portion and the second slit portion intersect, a straight line When the quadrilateral formed by connecting the vertices of the four opposing corners of the four main patterns is defined as an intersection area, the auxiliary patterns are arranged so that the center of gravity of the auxiliary patterns is located in the intersection area. 如請求項1或2之光罩，其中上述轉印用圖案包含包圍上述主圖案及上述輔助圖案之狹縫部，上述狹縫部具有：帶狀之第1狹縫部，其具有寬度S1(μm)，並於一方向延伸；及第2狹縫部，其具有寬度S2(μm)，並與上述第1狹縫部交叉；且於上述第1狹縫部與上述第2狹縫部交叉之區域，於將以直線連結4個上述主圖案之相對向之4個角部之頂點而形成之四邊形設為交叉區域時，以使上述輔助圖案包含於上述交叉區域內之方式而配置上述輔助圖案。 The photomask of claim 1 or 2, wherein the pattern for transfer includes a slit portion surrounding the main pattern and the auxiliary pattern, and the slit portion has: a strip-shaped first slit portion having a width S1 (μm), and extend in one direction; and a second slit portion, which has a width S2 (μm), and intersects with the first slit portion; and in the area where the first slit portion and the second slit portion intersect, a straight line When the quadrilateral formed by connecting the vertices of the four opposing corners of the four main patterns is set as an intersection area, the auxiliary patterns are arranged so that the auxiliary patterns are included in the intersection area. 如請求項1或2之光罩，其中上述第1透過控制膜及上述第2透過控制膜包含對彼此之蝕刻劑具有耐受性之材料。 The photomask of claim 1 or 2, wherein the first transmission control film and the second transmission control film include materials having resistance to each other's etchants. 如請求項1或2之光罩，其中上述第2透過控制膜相對於上述光罩之曝光所用之曝光之光之代表波長光具有透過率T2(%)，且滿足0<T2≦60。 The photomask of claim 1 or 2, wherein the second transmission control film has a transmittance T2 (%) with respect to the representative wavelength light of the exposure light used for the exposure of the photomask, and satisfies 0<T2≦60. 如請求項1或2之光罩，其中上述第1透過控制膜係於上述第2透過控制膜上積層有第3透過控制膜者。 The photomask of claim 1 or 2, wherein the first transmission control film is formed by laminating a third transmission control film on the second transmission control film. 一種近接曝光用光罩之製造方法，該近接曝光用光罩係於透明基板上具備用以轉印至被轉印體上之轉印用圖案，上述轉印用圖案包含：複數個主圖案，其等規律地排列；輔助圖案，其係於上述主圖案各自之附近，與上述主圖案相離而配置者，並且具有不會藉由曝光而於上述被轉印體上解像之尺寸；及狹縫部，其包圍上述主圖案及上述輔助圖案；該近接曝光用光罩之製造方法包含以下步驟：準備於上述透明基板上形成有第2透過控制膜、第3透過控制膜、及抗蝕膜之光罩基底；對上述抗蝕膜進行繪圖與顯影，形成具有複數種類之殘膜厚度之抗蝕圖案；將上述抗蝕圖案作為遮罩，對上述第3透過控制膜及第2透過控制膜依序進行蝕刻；將上述抗蝕圖案減膜特定之厚度量；及將減膜後之抗蝕圖案作為遮罩，對新露出之上述第3透過控制膜進行蝕刻。 A method for manufacturing a photomask for proximity exposure, wherein the photomask for proximity exposure is provided on a transparent substrate with a pattern for transfer to be transferred onto a body to be transferred, and the pattern for transfer comprises: a plurality of main patterns, They are regularly arranged; auxiliary patterns, which are located in the vicinity of each of the above-mentioned main patterns, are arranged apart from the above-mentioned main patterns, and have a size that will not be resolved on the above-mentioned transferred body by exposure; and a slit portion that surrounds the main pattern and the auxiliary pattern; the manufacturing method of the photomask for proximity exposure includes the steps of preparing a second transmission control film, a third transmission control film, and a resist film on the transparent substrate the photomask substrate; the above-mentioned resist film is drawn and developed to form a resist pattern with a plurality of residual film thicknesses; the above-mentioned resist pattern is used as a mask, and the above-mentioned third transmission control film and second transmission control film Etching is performed in sequence; the resist pattern is reduced by a specified thickness; and the newly exposed third transmission control film is etched using the reduced resist pattern as a mask. 一種近接曝光用光罩之製造方法，該近接曝光用光罩係於透明基板上具備用以轉印至被轉印體上之轉印用圖案，上述轉印用圖案包含：主圖案；輔助圖案，其係於上述主圖案之附近，與上述主圖案相離而配置者，並且具有不會藉由曝光而於上述被轉印體上解像之尺寸；及狹縫部，其包圍上述主圖案及上述輔助圖案；該近接曝光用光罩之製造方法包含以下步驟：準備於上述透明基板上形成有第2透過控制膜、蝕刻阻止膜、第3透過控制膜、及抗蝕膜之光罩基底；對上述抗蝕膜進行繪圖與顯影，形成具有複數種類之殘膜厚度之抗蝕圖案；將上述抗蝕圖案作為遮罩，對上述第3透過控制膜、上述蝕刻阻止膜、及上述第2透過控制膜依序進行蝕刻；將上述抗蝕圖案減膜特定之厚度量；及將減膜後之抗蝕圖案作為遮罩，對新露出之上述第3透過控制膜進行蝕刻。 A method for manufacturing a photomask for proximity exposure, wherein the photomask for proximity exposure is provided on a transparent substrate with a pattern for transfer to be transferred onto a body to be transferred, and the pattern for transfer comprises: a main pattern; an auxiliary pattern , which is located in the vicinity of the above-mentioned main pattern, is arranged away from the above-mentioned main pattern, and has a size that cannot be resolved on the above-mentioned transfer object by exposure; and a slit portion which surrounds the above-mentioned main pattern and The above-mentioned auxiliary pattern; the manufacturing method of the photomask for proximity exposure comprises the following steps: preparing a photomask base on which a second transmission control film, an etching stopper film, a third transmission control film, and a resist film are formed on the above-mentioned transparent substrate; Drawing and developing the above-mentioned resist film to form a resist pattern with a plurality of types of residual film thicknesses; using the above-mentioned resist pattern as a mask, the above-mentioned third transmission control film, the above-mentioned etching stopper film, and the above-mentioned second transmission film The control film is sequentially etched; the resist pattern is reduced by a specified thickness; and the newly exposed third transmission control film is etched using the reduced resist pattern as a mask. 一種顯示裝置之製造方法，其包含以下步驟：準備如請求項1至9中任一項之光罩；及使用近接曝光方式之曝光裝置，將上述轉印用圖案進行曝光，且轉印至被轉印體上。 A method of manufacturing a display device, comprising the steps of: preparing a photomask according to any one of claims 1 to 9; and using an exposure device of a proximity exposure method, exposing the above-mentioned pattern for transfer, and transferring it to a on the transfer body.
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