JP5770041B2 - Photomask and exposure apparatus - Google Patents

Description

  The present invention relates to a photomask in which a mask pattern is formed on a mask substrate, and particularly relates to a photomask and an exposure apparatus which are intended to prevent exposure of a pattern different from a target.

  This type of conventional photomask is provided with a plurality of types of pattern areas having different mask patterns arranged on the same mask substrate. When different types of patterns are exposed on the substrate, a plurality of types of photomasks are opened and closed by opening and closing the shutter. The pattern area of the pattern to be exposed is selected and exposed from the pattern area (see, for example, Patent Document 1).

JP 2008-310217 A

  However, such a conventional photomask selects a pattern area of a pattern to be exposed from the plurality of types of pattern areas by opening and closing operations of a shutter controlled based on a program of a control unit provided in the exposure apparatus. No means for confirming whether or not the pattern area was correctly selected was provided. Therefore, if the selection information of the above-mentioned multiple types of pattern area is entered and set by mistake due to human error, or if a photomask different from the photomask to be exposed is set, the above mistake will be made. There was a possibility that a pattern different from the regular pattern could be exposed because it could not be detected.

  SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a photomask and an exposure apparatus that address such problems and prevent exposure of a pattern different from the target.

In order to achieve the above object, a photomask according to a first aspect of the present invention is a photomask having a pattern region formed by arranging a plurality of mask patterns in at least one column on a mask substrate, wherein the plurality of mask patterns are arranged. An elongated opening provided in a direction intersecting the direction at a certain distance from the central axis of the pattern region so that the longitudinal central axis is parallel to the central axis, and the opening in the opening, In order to distinguish the mask pattern from another type of mask pattern formed on another mask substrate, the length of the opening is a pitch that is an integral multiple of the arrangement pitch of the mask pattern arranged along the central axis of the pattern region. and a identification mark comprising a plurality of slits provided by intersecting the central axis, wherein on the longitudinal central axis of the opening of the identification mark, the other The other identifying marks provided on the disk substrate but on the relatively different positions.

With such a configuration, the arrangement pitch of the mask pattern arranged along the central axis of the pattern region in the elongated opening provided at a certain distance from the central axis of the pattern region on which the mask pattern is formed Another mask in which an identification mark is provided at a position relatively different from the identification mark by the position of the identification mark composed of a plurality of slits provided at a pitch that is an integral multiple of identifying a board.

The photomask according to the second invention is a photomask in which a plurality of types of pattern regions having different mask patterns are arranged on the same mask substrate so that their central axes are parallel to each other. A plurality of elongated openings provided so that the longitudinal central axis is parallel to the central axis at a position spaced apart from each central axis in a direction intersecting the central axis. In order to identify the different mask patterns in the openings, the lengths of the openings are set at a pitch that is an integral multiple of the arrangement pitch of the mask patterns arranged along the center axis of the pattern areas. It includes an identification mark comprising a plurality of slits provided by intersecting the central axis, and the husband each identification mark in each of the openings' s, the relatively different on each longitudinal central axis of each opening But on the that position.

With such a configuration, the longitudinal central axis is provided in parallel with the central axis at positions spaced apart from the central axis of a plurality of types of pattern regions provided on the same mask substrate and having different mask patterns. the resulting elongate plurality of the opening, respectively, by intersecting each longitudinal central axis of the respective openings at a pitch of an integral multiple of the arrangement pitch of the mask pattern arranged along the central axis of each pattern region The mask pattern of each pattern region is identified by the positions of identification marks that are formed by a plurality of slits and are provided at relatively different positions .

  The slits in the openings have different widths in the longitudinal central axis direction. Thereby, the mask pattern of each pattern area is identified from the difference in the width of the slit in each opening in the longitudinal central axis direction.

An exposure apparatus according to a third aspect of the present invention is provided so as to face an object to be exposed, and provided with a plurality of pattern regions having different mask patterns on the same mask substrate so that their central axes are parallel to each other. In the direction intersecting with the central axis of each pattern region, a plurality of elongated openings whose longitudinal central axis is parallel to the central axis are formed at positions spaced apart from each central axis, In order to identify the different mask patterns in the openings, each of the openings has a pitch that is an integral multiple of the arrangement pitch of the mask patterns of the pattern areas arranged along the central axis of the pattern areas. the identification mark comprising a plurality of slits provided by intersecting the longitudinal central axis to retain a photomask provided in relatively different positions on the respective longitudinal central axis, said plurality of kinds of patterns A mask stage movable in the direction in which the regions are arranged, and one selected pattern region of the plurality of pattern regions of the photomask is irradiated with light source light, and the mask pattern of the selected pattern region is applied to the mask pattern. an exposure optical system for transferring onto the exposure member, arranged said selected one pattern region made to match the longitudinal central axis of the elongated receiving portions in the longitudinal central axis of said opening corresponding, of the identification mark A detection unit for detecting a position and a movement of the mask stage are controlled based on mask pattern selection information input by operating the input unit to select one pattern region from the plurality of types of pattern regions. together, and a control means for storing an exposure recipe, and the control means, the position of the identification mark which is calculated based on the recorded design value to the exposure recipe Compares the distribution, and position 置情 report of the identification mark detected by the detecting means in response to the selected pattern area, it is to determine the correctness of the selected pattern regions.

With such a configuration, a plurality of pattern regions having different mask patterns are arranged on the same mask substrate side by side so that the central axes thereof are parallel to each other by the mask stage provided facing the object to be exposed. In the direction intersecting with the central axis of the pattern region, a plurality of elongated openings whose longitudinal central axes are parallel to the central axis are formed at positions spaced apart from the central axes by a certain distance. In order to identify the different mask patterns , respectively , intersect with the longitudinal central axis of each opening at a pitch that is an integral multiple of the mask pattern arrangement pitch of each pattern area arranged along the central axis of each pattern area. the identification mark comprising a plurality of slits provided by holding a photomask provided in relatively different positions on each longitudinal central axis, the input by operating the input means by the control means Has been to control the movement of the mask stage based on the selection information of the mask pattern by moving the photomask arrangement direction of the plurality of kinds of pattern regions, selects one pattern area from the plurality several pattern areas, The selected pattern area is irradiated with light source light from an exposure optical system to transfer the mask pattern in the pattern area onto the object to be exposed. At this time, the identification corresponding to the selected pattern region is performed by the detecting means arranged so that the longitudinal central axis of the elongated light receiving portion is aligned with the longitudinal central axis of the opening corresponding to one selected pattern region. detecting the position on the longitudinal central axis of the mark, the control means, the position information of the identification mark recorded in the exposure recipe, position of the detected identification mark by the detecting means in correspondence with the selected pattern regions comparing the 置情 report determines correctness of the selected pattern regions.

According to the first aspect of the present invention, it is possible to discriminate from other mask substrates and determine whether the pattern area used for exposure is correct or not from the position of an identification mark made up of a plurality of slits provided in the opening. it can. Thereby, it is possible to prevent different patterns from being aimed and exposed by setting different photomasks due to human error.

According to the invention of claim 2 or 4 , whether the selected pattern area is correct or not is determined from the position of each identification mark made up of a plurality of slits in the openings provided corresponding to the plurality of types of pattern areas. Can be determined. Therefore, even if the selection information of the above-mentioned multiple types of pattern area is input and set by mistake due to human error, or a photomask different from the photomask to be exposed is set, that artificial It is possible to prevent a pattern different from the target from being exposed by detecting a mistake.

Furthermore, according to the third aspect of the present invention, it is possible to determine whether the pattern area selected based on the slit position, the slit interval, and the slit width is correct. This makes it possible to more reliably determine whether the pattern area is correct.

It is a front view which shows schematic structure of embodiment of the exposure apparatus by this invention. It is a top view which expands and shows the principal part of the exposure apparatus by this invention. It is a top view which shows one structural example of the photomask by this invention. It is a top view which shows one structural example of the slit provided in the opening part of the said photomask. It is a top view which shows another structural example of the said slit. It is a block diagram which shows the structure of the control means used for the exposure apparatus of this invention. It is a flowchart explaining operation | movement of the exposure apparatus of this invention. It is a flowchart explaining another operation | movement of the exposure apparatus of this invention.

  Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a front view showing a schematic configuration of an embodiment of an exposure apparatus according to the present invention. This exposure apparatus uses a photomask in which a plurality of types of pattern regions having different mask patterns are arranged on the same mask substrate, and the mask pattern of the pattern region selected from the plurality of types of pattern regions is placed on the object to be exposed. And is provided with a conveying means 1, a mask stage 2, an exposure optical system 3, a detecting means 4, an illuminating means 5, and a control means 6 (see FIG. 6). Yes. In the following description, the case where the object to be exposed is, for example, the liquid crystal display substrate 7 will be described.

  The transport means 1 is configured to transport both ends of the liquid crystal display substrate 7 coated with a photosensitive material in the direction of arrow A shown in FIG. 1 by a transport mechanism (not shown). For example, the liquid crystal display substrate A plurality of air outlets and air suction ports on the upper surface of the plurality of stages 8 arranged at regular intervals in the transport direction (hereinafter referred to as “X direction”), and ejected from the air outlets and air suction ports; The liquid crystal display substrate 7 is transported in a state of being floated by a certain amount on the stage 8 by balancing the pressure of the sucked air, and the moving distance of the liquid crystal display substrate 7 is measured. A labor-saving position sensor and a speed sensor (not shown) for detecting the conveyance speed of the liquid crystal display substrate 7 are provided.

  A mask stage 2 is provided opposite to the upper surface of the transfer means 1. The mask stage 2 sucks and holds the edge portion of the photomask 9 and moves stepwise in the X direction by a stage moving mechanism (not shown). A first mask stage 2A and a second mask stage 2B as shown in FIG. 2 that hold a plurality of photomasks 9 in a substantially orthogonal direction (hereinafter referred to as “Y direction”) are separated by a certain distance in the X direction. It has a configuration with. The first and second mask stages 2A and 2B are provided such that the plurality of held photomasks 9 are alternately arranged at a constant arrangement pitch in the Y direction. Further, the first and second mask stages 2A and 2B individually move the held photomasks 9 in the X and Y directions and rotate them in the XY plane so that each photomask 9 is predetermined. A mask alignment mechanism (not shown) for positioning at a predetermined position is also provided.

Here, as shown in FIG. 3, the photomask 9 has a plurality of types (for example, four types) of pattern regions 11 having different mask patterns on the same mask substrate 10 so that their longitudinal central axes are parallel to each other. It is provided side by side . In FIG. 3, the mask pattern is not shown in order to avoid making the figure complicated, but in each pattern region 11, a plurality of mask patterns are arranged in at least one line in the major axis direction. Is formed. Further, the photomask 9 is an elongated shape in which the longitudinal center axis is parallel to the longitudinal central axis of the pattern region at a position away from each longitudinal central axis in a direction intersecting the longitudinal central axis of each pattern region 11. a plurality of forming the opening 12 of the respective opening 12, respectively, for identifying a mask pattern, at least one elongated pattern (hereinafter "slit" hereinafter) 13 the intersecting the longitudinal center axis that it is provided at relatively different positions on the longitudinal central axis. And it is hold | maintained at the said mask stage 2 so that the arrangement direction of the said multiple types of pattern area | region 11 may correspond with a X direction. In addition, the photomask 9 is set in advance in the exposure optical system 3 to be described later at a position equidistant from the central axis parallel to the X direction of the photomask 9 on the longitudinal central axis with the pattern regions 11 therebetween. Mask alignment marks 14 are provided for positioning so as to have a certain positional relationship with respect to the reference position. Note that the mask alignment mark 14 is photographed in the gap between adjacent stages 8 of the conveying means 1 facing the mask alignment mark 14 in the pattern area 11 positioned in the irradiation area IA of the exposure optical system 3. A pair of two-dimensional cameras not shown is provided.

As shown in FIG. 4, one configuration example of the slit 13 in each opening 12 is the same pitch as the arrangement pitches P1 and P2 of the mask patterns arranged along the longitudinal central axis of each pattern region 11, respectively. For example, identification marks made up of three slits 13 are formed at relatively different positions on the longitudinal center axis of each opening 12 . Alternatively, as shown in FIG. 5, the plurality of slits 13 are displaced by a certain dimension in the longitudinal central axis direction of each opening 12 at a pitch twice the arrangement pitch P1, P2 of each mask pattern. It may be provided throughout. The slits 13 in the openings 12 may have different widths in the longitudinal central axis direction. The position information of the slits 13 in each opening 12 includes the pattern information of the mask patterns in the pattern areas 11a to 11d, for example, a 40-inch panel color filter mask pattern (pattern area 11a), and a 40-inch panel TFT. It includes mask pattern information such as a mask pattern (pattern region 11b), a 50-inch panel color filter mask pattern (pattern region 11c), or a 50-inch panel TFT mask pattern (pattern region 11d). In this case, the positional information of the slit 13 that is set in advance and stored in the memory 24 described later is, for example, as shown in FIG. 4, the second slit 13 from the left of the plurality of slits 13 and the X of the photomask 9. Distances Ya, Yb, Yc, and Yd with respect to the central axis Mc parallel to the direction are design values.

  An exposure optical system 3 is provided above the mask stage 2. The exposure optical system 3 irradiates one pattern region 11 selected from a plurality of types of pattern regions 11 of each photomask 9 held on the mask stage 2 by irradiating light source light to the selected pattern region 11. The mask pattern is transferred onto the liquid crystal display substrate 7. The light source 15 that emits light source light including ultraviolet rays and the light source light are guided to the photomask 9, and the luminance distribution of the light source light is made uniform to be parallel light. A plurality of unit exposure optical systems provided corresponding to the respective photomasks 9 and including a coupling optical system 16 that irradiates the photomask 9 and a shutter 17 that opens and closes the optical path of the light source light. Consists of.

  Above the mask stage 2, the detecting means 4 is disposed so that the longitudinal center axis of the elongated light receiving portion coincides with the longitudinal center axis of the opening 12 corresponding to the selected one pattern region 11. Yes. The detection means 4 is a line camera having a plurality of light receiving elements arranged in a straight line in the Y direction, and photographs pixels of the liquid crystal display substrate 7 passing through the opening 12 and under the photomask 9. At the same time, the plurality of slits 13 provided in the opening 12 are photographed.

  An illuminating unit 5 is provided in the gap between the adjacent stages 8 of the conveying unit 1 so as to face the imaging region of the detecting unit 4. The illumination means 5 illuminates the imaging region of the detection means 4 from below the liquid crystal display substrate 7 through the substrate, and is, for example, a halogen lamp that emits visible light. An ultraviolet cut filter is provided on the light emission side of the lamp to prevent the photosensitive material of the liquid crystal display substrate 7 from being exposed to ultraviolet rays contained in the illumination light.

Control means 6 is provided in electrical connection with the transport means 1, mask stage 2, light source 15, shutter 17, and detection means 4. The control means 6 controls the movement of the mask stage 2 to select one pattern area 11 from a plurality of types of pattern areas 11, and mask pattern information read from an exposure recipe that is set and stored in advance. (For example, pattern number) and mask pattern information (for example, pattern number) stored in advance corresponding to the position of each slit 13, corresponding to the position of the slit 13 detected by the detection means 4 The mask pattern information is compared to determine whether the selected pattern area 11 is correct or not. As shown in FIG. 6, the transport unit drive controller 18, the mask stage drive controller 19, the light source drive controller 20, the shutter drive controller 21, the image processing unit 22, the calculation unit 23, the memory 24, A data input unit 25 and a control unit 26 are provided.

  Here, the transport unit drive controller 18 controls the moving mechanism of the transport unit 1 to move the liquid crystal display substrate 7 in the direction of arrow A at a predetermined speed. In addition, the mask stage drive controller 19 controls the drive of the stage moving mechanism to move the photomask 9 by a predetermined amount in the X direction, thereby selecting one pattern region 11 selected from a plurality of types of pattern regions 11 of the photomask 9. Is positioned within the irradiation area IA (see FIG. 2) of the exposure optical system 3, and the driving of an alignment mechanism (not shown) provided on the mask stage 2 is controlled to rotate the photomask 9 in the X and Y directions and rotation (θ). The photomask 9 is finely moved in the direction so as to be aligned with the reference position Hs of the exposure optical system 3 so as to have a fixed positional relationship. Further, the light source drive controller 20 controls turning on and off of the light source 15. Furthermore, the shutter drive controller 21 controls the opening and closing of the shutter 17. The image processing unit 22 receives and processes the images of the three slits 13 acquired by the detection means 4 and detects the position of each slit 13 in the Y direction from the luminance change in the Y direction. is there. Further, the calculation unit 23 determines the arrangement pitch of the slits 13 based on the positions of the three slits 13 detected by the image processing unit 22, for example, between the second slit 13 from the left and the center position Cc of the detection means 4. And a distance between the slit 13 and a reference position set in advance on the liquid crystal display substrate 7 is calculated, and a deviation amount between the distance and the preset target value is calculated. Is. Further, the memory 24 temporarily stores the calculation result in the calculation unit 23 and also stores data input by the data input unit 25 described later, and includes a recording medium on which an exposure recipe is recorded. Furthermore, the data input unit 25 selects selection information for selecting one mask pattern (pattern region 11) from a plurality of types of mask patterns (pattern region 11) of the photomask 9, for example, the position of the pattern region 11 in the X direction. For inputting information, for example, a keyboard or a numeric keypad. And the control part 26 is integrated and controlled so that each said component may drive appropriately.

Next, the operation of the exposure apparatus configured as described above will be described with reference to the flowchart of FIG. Here, as shown in FIG. 4, a case where three slits 13 having relatively different positions in the Y direction are provided in each opening 12 will be described.
First, in step S1, the photomask 9 is placed on the first and second mask stages 2A and 2B so that the opening 12 is on the near side in the substrate transport direction indicated by the arrow A with respect to the pattern region 11 corresponding thereto. Furthermore, the exposure recipe is recorded on the memory 24 of the control means 6, for example, a recording medium such as an HDD, and at the same time, for example, four patterns of the photomask 9 set on the first and second mask stages 2A and 2B. The selection information of the pattern area 11 selected from the area 11, for example, the position information xa, xb, xc, xd in the X direction is input by operating the data input unit 25 and stored in the memory 24 to prepare for the start of exposure. Is called.

  The exposure recipe includes panel information such as the size and cell size of the liquid crystal display substrate 7, the transport speed of the liquid crystal display substrate 7 during exposure, exposure start position information, exposure end position information, and exposure information such as exposure energy. The mask pattern information includes the arrangement pitch P1 or P2 of the mask pattern to be used in the Y direction and the position information of the slit 13 corresponding to the mask pattern. In this case, the slit position information as mask pattern information recorded in the exposure recipe is, for example, the distance between the center Cc of the detecting means 4 shown in FIG. Distance Ya, Yb, Yc or Yd between the center Mc in the Y direction and the second slit 13, distance My between the reference position Hs preset in the exposure optical system 3 and the center Mc of the photomask 9 , Calculated in advance based on the design value of the distance Cy between the reference position Hs and the center Cc of the detection means 4 and stored in the memory 24. In the following description, the case where the pattern region 11 to be selected is, for example, the pattern region 11b will be described.

  In step S2, after the liquid crystal display substrate 7 is positioned and placed on the stage 8 of the transport means 1, when an exposure start switch (not shown) is pressed, the mask pattern to be used that is set by input is set. The photomask 9 is stepped in the X direction according to the position information xb corresponding to the pattern area 11b, and the pattern area 11b is positioned in the irradiation area IA of the exposure optical system 3.

  In step S3, alignment of the photomask 9 is performed. A specific procedure of the alignment is as follows. First, a pair of mask alignment marks 14 shown in FIG. 3 corresponding to the pattern area 11b positioned in the irradiation area IA of the exposure optical system 3 is used with a pair of two-dimensional cameras not shown. For example, the photomask 9 is aligned by driving the mask alignment mechanism so that the center of each mask alignment mark 14 matches the center of the field of view of each two-dimensional camera. As a result, the center Mc of the photomask 9 is positioned at a position away from the reference position Hs preset in the exposure optical system 3 by a certain distance My as shown in FIG.

  In step S4, the three slits 13 corresponding to the selected pattern region 11b are photographed by the detection means 4, and this is image-processed by the image processing unit 22 to detect the position of each slit 13 in the Y direction. The calculation unit 23 calculates the interval P1 between the adjacent slits 13. Further, the distance yb between the slit 3 and the center Cc of the detecting means 4 is calculated based on, for example, the position of the second slit 13 from the left of the three slits 13, and this is acquired as slit position information.

  In step S5, the calculated pitch P1 of the slit 13 is compared with the mask pitch P1 of the exposure recipe stored in the memory 24 in the control unit 26, and it is determined whether or not they match. Furthermore, the slit position information (Yb + My−Cy) calculated based on the design value recorded in the exposure recipe and stored in the memory 24 is compared with the slit position information yb acquired by photographing by the detection unit 4. It is determined whether or not both match. Thereby, it is determined whether or not the selected mask pattern (pattern region 11) is correct as a mask pattern used for exposure. Here, when both the slit interval and the slit position information acquired by the detection means 4 coincide with the arrangement pitch and the slit position information of the mask pattern stored in the memory 24, the determination in step S5 is “YES”. In step S6, exposure is performed while moving the liquid crystal display substrate 7.

  On the other hand, if any one of the slit interval and the slit position information does not match the arrangement pitch and the slit position information of the mask pattern stored in the memory 24, the determination in step S5 is “NO” and the process proceeds to step S7. Proceeding, an error is notified by lighting of a warning light, an alarm sound, etc., and exposure is stopped.

  Thereby, it is possible to prevent different patterns from being exposed due to an artificial setting error. For example, when a 40-inch panel TFT pattern corresponding to the exposure area 10b is to be exposed, xa is erroneously input where xb should be input as the position information of the exposure area 10b due to an operation error of the data input unit 25. If so, a 40-inch panel color filter pattern corresponding to the exposure region 10a is selected. In this case, since the arrangement pitch P1 of each of the 40-inch panel TFT pattern and the color filter pattern is the same, the correctness of the selected exposure region 10 cannot be determined only by the slit interval of the three slits 13.

  However, according to the present invention, the selected exposure region 10 is correct only when both the slit interval and slit position information match the arrangement pitch and slit position information of the mask pattern stored in the memory 24. In this case, the slit position information acquired by the detection unit 4 is ya as shown in FIG. 4, and the slit position information (Yb + My−Cy) calculated based on the design value of the exposure recipe is used. ) And the selected mask pattern (pattern region 11a) is determined to be incorrect. Thus, according to the present invention, it is possible to prevent different patterns from being exposed due to human error, and it is possible to prevent the occurrence of a large number of defects.

  FIG. 8 is a flowchart for explaining another mask pattern selection operation of the exposure apparatus according to the present invention. In the mask pattern selection operation shown in FIG. 8, the photomask is moved stepwise in the X direction, the slit interval is calculated and the slit position information is acquired each time, and the arrangement pitch and slits of the mask pattern stored in the memory 24 are obtained. The mask pattern to be used is searched while determining whether or not the selected mask pattern (pattern region 11) is correct by comparing with the position information.

  First, in step S11, preparation for starting exposure is performed in the same manner as in step S1.

  In step S12, after the first exposure area 10a is positioned in the irradiation area IA of the exposure optical system 3, mask alignment is performed using the mask alignment mark 14 corresponding to the exposure area 10a as in step S2. Run.

  In step S13, the three slits 13 corresponding to the selected pattern region 11a are photographed by the detection means 4, and this is image-processed by the image processing unit 22 to detect the position of each slit 13 in the Y direction. An interval between adjacent slits 13 is calculated by the calculation unit 23. Further, the distance between the slit 3 and the center Cc of the detecting means 4 is calculated based on the position of the second slit 13 of the three slits 13 from the left, for example, and obtained as slit position information.

  In step S14, the calculated interval between the slits 13 is compared in the control unit 26 with the arrangement pitch of the mask pattern stored in the memory 24, and it is determined whether or not they match. Further, the slit position information stored in the memory 24 is compared with the slit position information acquired by the detecting means 4 to determine whether or not they match. Thereby, it is determined whether or not the selected mask pattern (pattern region 11) is correct as a mask pattern used for exposure. Here, when both the slit interval and the slit position information acquired by the detection means 4 coincide with the arrangement pitch and the slit position information of the mask pattern stored in the memory 24, the determination in step S14 is “YES”. In step S15, exposure is performed while the liquid crystal display substrate 7 is moved.

  On the other hand, if any one of the slit interval and the slit position information does not match the arrangement pitch and the slit position information of the mask pattern stored in the memory 24, step S14 is “NO” determination and step S16 follows. move on.

  In step S16, it is determined whether or not the movement of the photomask 9 has reached the movement limit. Here, when the movement of the photomask 9 is still within the movement limit, the determination in step S16 is “NO” and the process proceeds to step S17.

  In step S17, the photomask 9 is moved stepwise to select the next pattern region 11b. Then, after returning to step S12 and performing mask alignment using the mask alignment mark 14 corresponding to the next selected pattern region 11b, the interval of the slit 13 corresponding to the next pattern region 11b is set in step S13. While calculating, the positional information of the slit 13 is acquired. In this way, Steps S12 to S17 are repeatedly executed until “YES” is determined in Step S16.

  In this case, even if the steps S12 to S17 are repeatedly executed, if the determination in step S14 is not “YES” and the movement of the photomask reaches the limit in step S16, a different photomask is set due to human error. In step S16, the determination is “YES”, and the process proceeds to step S18, where an error is notified by lighting of a warning lamp, an alarm sound, or the like, and the exposure is stopped.

  Here, the exposure is performed based on the exposure information recorded in the exposure recipe. For example, the liquid crystal display substrate 7 is transported at a high speed until the liquid crystal display substrate 7 reaches the exposure start position. When the liquid crystal display substrate 7 reaches the exposure start position and the head area of the exposure area reaches the exposure position of the exposure optical system 3, the substrate transport speed changes to a speed set appropriately for exposure. At the same time, the shutter 17 is opened to irradiate the selected pattern region 11 of the photomask 9 with the light source light, and the mask pattern of the pattern region 11 is transferred to the exposure region of the liquid crystal display substrate 7. In this way, exposure of the exposure area is performed while the liquid crystal display substrate 7 is conveyed at a constant speed.

  When the liquid crystal display substrate 7 reaches the exposure end position and the trailing area of the exposure region reaches the exposure position of the exposure optical system 3, the substrate 17 is closed and the substrate transport speed is increased at the same time as the shutter 17 is closed. The substrate 7 is unloaded.

  During the exposure operation, a reference position preset in a pattern formed on the liquid crystal display substrate 7 through the opening 12 of the photomask 9 by the detection means 4 (for example, a center parallel to the X direction of the TFT substrate). And the distance between the reference position and the center Cc of the detection means 4 is preset and matches the target value stored in the memory 24. The mask alignment mechanism of the mask stage 2 is driven to finely move the photomask 9 in the Y direction, thereby aligning the photomask 9 with the moving liquid crystal display substrate 7. Thereby, the photomask 9 can be made to follow the liquid crystal display substrate 7 being conveyed while swinging in the Y direction, and the exposure position accuracy can be improved.

In the above embodiment, the case where exposure is performed using the photomask 9 in which a plurality of types of pattern regions 11 are formed on the same mask substrate 10 has been described. However, the present invention is not limited to this, and the photomask 9 May be one in which one pattern region 11 is formed. In this case, it can be distinguished from another type of photomask 9 from the difference in the relative formation positions of the slits 13.

  Moreover, in the said embodiment, although the to-be-exposed body demonstrated the case where it was the liquid crystal display substrate 7, this invention is not restricted to this, A to-be-exposed body is a plasma display display substrate or an organic EL display substrate. Any substrate may be used.

DESCRIPTION OF SYMBOLS 2 ... Mask stage 3 ... Exposure optical system 4 ... Detection means 6 ... Control means 7 ... Substrate for liquid crystal display (exposed body)
DESCRIPTION OF SYMBOLS 9 ... Photomask 10 ... Mask substrate 11, 11a-11d ... Pattern area | region 12 ... Opening part 13 ... Slit
25. Data input part (input means)

Claims (4)

A photomask having a pattern region formed by arranging a plurality of mask patterns in at least one row on a mask substrate,
An elongated opening provided in a direction intersecting with the arrangement direction of the plurality of mask patterns at a position away from the central axis of the pattern region so that the longitudinal central axis is parallel to the central axis; ,
In the opening, in order to distinguish the mask pattern from another type of mask pattern formed on another mask substrate, the pitch is an integer multiple of the arrangement pitch of the mask pattern arranged along the central axis of the pattern region. An identification mark comprising a plurality of slits provided to intersect the longitudinal central axis of the opening ,
Wherein on the longitudinal center axis of the identification mark the opening, a photomask, characterized in that said other identification mark provided in the other of the mask substrate is provided in relatively different positions. A photomask in which a plurality of types of pattern regions having different mask patterns are arranged on the same mask substrate so that their central axes are parallel to each other,
A plurality of elongated openings provided in the direction intersecting with the central axis of each pattern region at positions spaced apart from each central axis so that the longitudinal central axis is parallel to the central axis. When,
In order to identify the different mask patterns in the openings, respectively, the openings are arranged at a pitch that is an integral multiple of the arrangement pitch of the mask patterns arranged along the central axis of the pattern areas. An identification mark comprising a plurality of slits provided to intersect with each longitudinal central axis,
A photomask, wherein each identification mark in each opening is provided at a relatively different position on each longitudinal central axis of each opening. 3. The photomask according to claim 2 , wherein the slits in the openings have different widths in the longitudinal central axis direction. A plurality of types of pattern regions, which are provided facing the object to be exposed and have different mask patterns on the same mask substrate, are arranged side by side so that their central axes are parallel to each other, and intersect the central axis of each pattern region. A plurality of elongated openings whose longitudinal central axes are parallel to the central axis are formed at positions spaced apart from the central axes in the direction, and different mask patterns are respectively formed in the openings. In order to identify, provided at a pitch that is an integral multiple of the arrangement pitch of the mask pattern of each pattern region arranged along the central axis of each pattern region, and provided to intersect with each longitudinal central axis of each opening. the identification mark comprising a plurality of slits to hold a photomask provided in relatively different positions on the respective longitudinal central axis, movable in the direction of arrangement of said plurality of kinds of pattern regions trout And the stage,
An exposure optical system that irradiates a selected one of the pattern areas of the photomask with light source light and transfers the mask pattern of the selected pattern area onto the object to be exposed;
A detecting means for detecting the position of the identification mark , which is arranged so that the longitudinal central axis of the elongated light-receiving portion coincides with the longitudinal central axis of the opening corresponding to the selected one pattern region;
Control means for controlling the movement of the mask stage based on mask pattern selection information inputted by operating an input means to select one pattern area from the plurality of types of pattern areas and storing an exposure recipe ; ,
With
The control means, the position information of the identification mark which is calculated based on the recorded design value in the exposure recipe, position of the identification mark detected by the detecting means in response to the selected pattern regions compares the information, exposure apparatus and judging the correctness of the selected pattern regions.