TWI751807B - Vertical light-emitting diode structure with high current dispersion and high reliability - Google Patents

Abstract

A vertical light-emitting diode structure with high current dispersion and high reliability, which comprises a conductive substrate with a central region and a side region; a light-emitting semiconductor layer is disposed on the central region; an ohmic contact metal The layer is arranged in the center of the light-emitting semiconductor layer; an N-type electrode is arranged in the side region, and the ohmic contact metal layer and the N-type electrode are connected through an N-type electrode bridging structure; accordingly, a working current is It starts to diffuse from the center of the light-emitting semiconductor layer and has high current dispersion, which can solve the heat dissipation problem of local high current caused by the design of the N-type electrode placed on the edge. The design of the side area can avoid the interference of the gold wires of the package caused by the centering of the N-type electrode. At the same time, the light-emitting semiconductor layer is not damaged by stress and is not brittle, and the subsequent process does not involve wire bonding to cause cracks in the light-emitting semiconductor layer. or risk of separation to increase reliability.

Description

Vertical Light Emitting Diode Structure with High Current Dispersion and High Reliability

The present invention relates to light emitting diodes, and more particularly, to a vertical light emitting diode structure with high current dispersion and high reliability.

Vertical light-emitting diodes can emit high-efficiency axial light, which is very suitable for applications requiring high operating current and high illuminance. Products can be used for high-light sterilization (ultraviolet light), vehicle headlights and taillights (blue-yellow-red light), projector light sources (blue-green-red), and infrared security detection (infrared). In addition to high luminosity and luminous density, excellent high-power light-emitting diode (LED) components also need to have good reliability. Take the car headlight module as an example, once the LED fails, it will affect the safety at night. With the high standards of automotive LEDs, even if a small amount of 1ppm fails, it needs to be improved in the automotive industry.

Traditional high-power vertical light-emitting diodes have a chip size of about 1mm x 1mm and an operating current of 1A or higher. The general structural design has the following characteristics: the electrode pads are located above the light-emitting semiconductor layer for wire bonding, usually with Thicker gold wires are more conducive to the passage of large currents. There are auxiliary lines (finger) located above the light-emitting semiconductor layer in a fork shape. The more auxiliary lines are arranged on the light-emitting semiconductor layer, the better the current dispersion is, but the light-shielding area is also increased. AuSn (gold-tin alloy) should be used as the connecting material between the P electrode and the package for good electrical conductivity and heat dissipation. The bottom has high flatness and low porosity to reduce current accumulation and increase heat dissipation.

When the electrode pad is formed in the center of the light-emitting semiconductor layer, it will have the best current dispersion, which can not only improve the luminous efficiency, but also have good heat dissipation and avoid the local heating problem of current concentration. However, after the wire bonding process of the electrode pad, since the thick gold wire used in the package will block light and interfere with light uniformity, the current choice is usually to place the electrode pad to the most side of the light-emitting semiconductor layer. but on the side The electrode pads on the side, when the working current is high, the light and heat will be concentrated on the side, and the good current dispersion effect of the center design cannot be achieved.

At present, the failure modes of vertical light-emitting diodes are roughly as follows: (1) When the electrode pad is biased and designed at high operating current, due to poor diffusion and high edge heat, uneven light emission and electrode burnout are caused. (2) Wire bonding process The electrode pad on the surface of the light-emitting semiconductor layer is wired, which has the problem of damaging the light-emitting semiconductor layer and reduces reliability. (3) When the gold wire on the electrode pad is pulled, the light-emitting semiconductor layer is indirectly pulled to form micro-cracks or film peeling, resulting in failure or instability of the package. (4) If the connection between the P electrode and the package body is uneven or there are too many pores, local hot spots will be formed under high operating current, which will further cause material deterioration and cause component burnout.

Therefore, such as US Patent No. US 8,319,250 B2, which discloses a multi-conductive pillar technology, in order to make the N electrode as the bottom electrode and extend a plurality of vertical conductive pillars with sidewall insulation through the P-type semiconductor layer, the quantum well layer, and Enter the N-type semiconductor layer, so that the working current is evenly dispersed into the N-type semiconductor layer, and the P electrode is provided with a side for the wire bonding of the packaging process. This design can obtain the best dispersion of the operating current through the multiple conductive pillars, and the wire bonding in the packaging process will not impact the light-emitting semiconductor layer, thus improving the failure mode of the vertical light-emitting diode (1)( 2)(3). However, this structure includes a large number of precise conductive pillars, the diameter of which is usually 20-30 μm, the inner cylindrical wall is plated with a very thin insulating material, and the central layer of the cylinder is deposited with highly conductive metal. The structure is fine but fragile, the process is complicated, the cost is high, the process conditions are narrow, and the failed products are not easy to detect. Conductive pillars can micro-crack, forming micro-conducting channels, causing immediate component failure or long-term reliability issues.

Therefore, the main purpose of the present invention is to disclose a vertical light emitting diode structure with high current dispersion and high reliability, so as to meet the application requirements of high axiality, high brightness and high reliability.

The present invention is a vertical light-emitting diode structure with high current dispersion and high reliability, which comprises a P-type electrode, a conductive substrate, a light-emitting semiconductor layer, an ohmic contact metal layer, and an N-type electrode bridged The structure and an N-type electrode; wherein one side of the conductive substrate is provided with the P-type electrode, and the other side of the conductive substrate has a central area and a side area, and the side area is adjacent to the central area. The light-emitting semiconductor layer is disposed on the central region of the conductive substrate, and the light-emitting semiconductor layer includes a P-type semiconductor layer, a quantum well layer (MQW) and an N-type semiconductor layer, and the P-type semiconductor layer is disposed on the conductive substrate On the substrate, the quantum well layer (MQW) is arranged on the P-type semiconductor layer, and the N-type semiconductor layer is arranged on the quantum well layer. The ohmic contact metal layer is disposed at the center of the N-type semiconductor layer and ohmically contacts the N-type semiconductor layer. The N-type electrode bridging structure has a bridging insulating layer and a bridging conductive layer, the bridging insulating layer is disposed across the N-type semiconductor layer and the side region of the conductive substrate, and the bridging insulating layer The layer is adjacent to the ohmic contact metal layer, and the bridge conductive layer is disposed on the bridge insulation layer, and one end of the bridge conductive layer is connected to the ohmic contact metal layer, and the other end of the bridge conductive layer extends to the conductive substrate. the side area. The N-type electrode is used for the wire bonding process, and the N-type electrode is disposed on the bridge conductive layer and located above the side region.

Accordingly, the advantages of the present invention compared with the prior art are that the structure design of the vertical light emitting diode is adopted, which has high axial light characteristics; Leading to the center of the N-type semiconductor layer is the starting point for diffusion, with high current dispersion, which can avoid the interference of the gold wires of the package caused by the centering of the N-type electrode and the placement of the N-type electrode at the edge of the design. The resulting local high current problem; in addition, the light-emitting semiconductor layer is not disposed under the N-type electrode, and the light-emitting semiconductor layer is not damaged by stress during the wire bonding process. There is no risk of cracking or separation of the light-emitting semiconductor layer caused by wire bonding in the subsequent process, thereby increasing reliability.

I: working current

P1, P2, P3: Current density contours

L: Excitation light

10: P-type electrode

101: P-type sub-electrode

11: Insulation isolation road

12: P-type conductive line

20: Conductive substrate

21: Central District

22: Side Zone

23: Buffer layer

24: Bonding layer

25: Alternative substrates

30: Light-emitting semiconductor layer

31: P-type semiconductor layer

32: Quantum Well Layer

33: N-type semiconductor layer

40: Ohmic contact metal layer

42: Auxiliary conductive line

421: Auxiliary Ohmic Contact Metal Layer

50: N-type electrode jumper structure

51: Jumper insulation

52: Jumper conductive layer

60: N-type electrode

70: Auxiliary P-type electrode

80: Conductive metal light reflection layer

81: Electrode reflection layer

82: Bridge the reflective layer

90: Auxiliary N-type electrode

901: Auxiliary Ohmic Contact Metal Layer

91: N-type electrode conductive line

92: Line insulation

Figure 1 is a schematic cross-sectional view of the structure of the present invention.

FIG. 2 is a schematic top view of the structure of the present invention.

FIG. 3 is a schematic top view of the structure of another embodiment of the present invention.

FIG. 4 is a schematic diagram of the circuit path of the present invention using medium and small currents.

FIG. 5 is a schematic diagram of a circuit path of the present invention using a large current.

FIG. 6 is a schematic diagram of the current density contour line of the present invention.

FIG. 7 is a schematic diagram of the reflection path of excitation light in the present invention.

FIG. 8 is a schematic diagram of a reflection path of excitation light according to another embodiment of the present invention.

FIG. 9 is a schematic diagram of a reflection path of excitation light according to another embodiment of the present invention.

FIG. 10 is a schematic top view of the structure of an N electrode of a large-sized wafer according to the present invention.

FIG. 11 is a schematic bottom view of the structure of the large-size wafer P electrode of the present invention.

In order to enable your members to have a more in-depth understanding and recognition of the features, purposes and effects of the present invention, a preferred embodiment is listed and described in conjunction with the drawings as follows: please refer to FIG. 1 and FIG. 2, the present invention is as follows: A vertical light-emitting diode structure with high current dispersion and high reliability, which includes a P-type electrode 10, a conductive substrate 20, a light-emitting semiconductor layer 30, an ohmic contact metal layer 40, and an N-type electrode across the The connecting structure 50 and an N-type electrode 60 are connected. One side of the conductive substrate 20 is provided with the P-type electrode 10 , and the other side of the conductive substrate 20 has a central area 21 and a side area 22 , and the side area 22 is adjacent to the central area 21 .

The light-emitting semiconductor layer 30 is disposed on the central region 21 of the conductive substrate 20 , and the light-emitting semiconductor layer 30 includes a P-type semiconductor layer 31 , a quantum well layer 32 (MQW) and an N-type semiconductor layer 33 . The type semiconductor layer 31 is disposed on the conductive substrate 20 , the quantum well layer 32 (MQW) is disposed on the P-type semiconductor layer 31 , and the N-type semiconductor layer 33 is disposed on the quantum well layer 32 .

The ohmic contact metal layer 40 is disposed at the center of the N-type semiconductor layer 33 and ohmically contacts the N-type semiconductor layer 33 . The N-type electrode jumper structure 50 has a jumper insulating layer 51 and a jumper conductive layer 52 , and the jumper insulating layer 51 is disposed across the N-type semiconductor layer 33 and the side region 22 of the conductive substrate 20 . and the jumper insulating layer 51 is adjacent to the ohmic contact metal layer 40, and the jumper conductive layer 52 is disposed on the jumper insulating layer 51, and one end of the jumper conductive layer 52 is connected to the ohmic contact metal layer 40, The other end of the bridge conductive layer 52 extends to the side region 22 of the conductive substrate 20 . The N-type electrode 60 is used for the wire bonding process, and the N-type electrode 60 is disposed on the bridge conductive layer 52 and located above the side region 22 .

In a preferred embodiment, the conductive substrate 20 may include a buffer layer 23, a bonding layer 24 and a substitute substrate 25, the bridge insulating layer 51 and the light emitting semiconductor layer 30 are disposed on the buffer layer 23, the The P-type electrode 10 is disposed on the substitute substrate 25 , and the bonding layer 24 bonds and fixes the buffer layer 23 and the substitute substrate 25 .

In addition, the present invention may further include an auxiliary P-type electrode 70 disposed on the side region 22 of the conductive substrate 20 . The side region 22 surrounds the central region 21 , and the auxiliary P-type electrode 70 and the N-type electrode 60 are located on the side region 22 on different sides of the central region 21 , as shown in FIG. 2 .

In another embodiment, the side region 22 also surrounds the central region 21 , and the auxiliary P-type electrode 70 and the N-type electrode 60 are located on the side region 22 on the same side of the central region 21 , as shown in FIG. 3 shown.

Please refer to FIG. 4 , when the light-emitting semiconductor layer 30 is to be driven to emit light, a working current I needs to be generated in the light-emitting semiconductor layer 30 . For the structure shown in FIG. 1 , when the working current I only needs a small and medium current ( When using at low brightness), any one of the P-type electrode 10 and the auxiliary P-type electrode 70 can be selected as a first electrode (the P-type electrode 10 is selected as shown in FIG. 4 ), and the N-type electrode 60 can be used as the first electrode. A second electrode is provided, and a working voltage (not shown) is supplied between the first electrode and the second electrode, so that the working current I can be generated, and enter the light emitting semiconductor layer 30 from the ohmic contact metal layer 40 .

Please refer to FIG. 5 again, when the working current I requires high brightness, both the P-type electrode 10 and the auxiliary P-type electrode 70 can be used as a first electrode, and the N-type electrode 60 can be used as a The second pole, and supply the working voltage with a large voltage between the first pole and the second pole to generate the working current I with a large current, but since the working current I with a large current has two paths, so It will be dispersed to reduce the current density of the working current I, and avoid the problem of premature aging or even burnout of components caused by local high temperature.

Please refer to FIG. 2 or FIG. 3 again, in order to further disperse the current and pass the light-emitting semiconductor layer 30 more dispersedly and uniformly, the present invention may further include at least one auxiliary conductive line 42 , and the at least one auxiliary conductive line 42 is arranged The N-type semiconductor layer 33 is connected to the ohmic contact metal layer 40 (as shown in FIG. 1 ), and the at least one auxiliary conductive line 42 is connected to the N-type semiconductor layer 33 through an auxiliary ohmic contact metal layer 421 respectively. In one embodiment, the at least one auxiliary conductive line 42 is plural and diverges toward the periphery. As shown in FIG. 6 , in order to draw the current density contour lines P1 and P2, the current density contour line P1 is greater than the current density contour line P2, that is, the current density is the highest at the center of the N-type semiconductor layer 33, and gradually decreases toward the periphery.

Please also refer to FIG. 7 , FIG. 8 and FIG. 9 . In addition, in order to increase the brightness, the conductive substrate 20 can be provided with a conductive metal light in ohmic contact with the P-type semiconductor 31 in the region adjacent to the light-emitting semiconductor layer 30 . The reflective layer 80, and the contact between the ohmic contact metal layer 40 and the N-type semiconductor layer 33 An electrode reflection layer 81 protruding toward the N-type semiconductor layer 33 can be disposed on the surface, and the electrode reflection layer 81 is formed such that the ohmic contact metal layer 40 is a highly reflective metal and the underlying N-type semiconductor layer 33 is formed as an outer surface. Convex reflector. The shape of the electrode reflection layer 81 is any one selected from a single convex reflection mirror (as shown in FIG. 7 ), a continuous convex reflection mirror (as shown in FIG. 8 ) and a multiple micro-slanted reflection mirror (as shown in FIG. 9 ). . Through the configuration of the conductive metal light reflection layer 80 and the electrode reflection layer 81, when the light emitting semiconductor layer 30 generates an excitation light L, the excitation light L originally shielded by the ohmic contact metal layer 40 can pass through the conductive metal layer 40. The metal light reflective layer 80 and the electrode reflective layer 81 are reflected multiple times to be emitted from a light emitting surface of the light emitting semiconductor layer 30 , which can increase the light extraction rate of the excitation light L, thereby enhancing the luminous brightness. Similarly, the N-type electrode bridging structure 50 can also reduce the shading by this method. The contact surface of the bridging conductive layer 52 and the bridging insulating layer 51 can be provided with a bridging reflective layer protruding toward the bridging insulating layer 51 82. The detailed method is to use a metal with high reflectivity as the cross-connection conductive layer 52, and at the same time use a highly transparent insulating material (such as SiO2, SiN) as the cross-connection insulating layer 51, and the cross-connection insulating layer 51 (transparent insulating material) Layer) above the plane in contact with the jumping conductive layer 52 is made into a downward convex structure (eg etching method), with the jumping conductive layer 52 above it as a highly reflective metal, that is, the N-type electrode jumping structure 50 is formed The shape of the reflector can be any one selected from a single convex cylindrical reflector, a continuous convex reflector, and a multiple micro-slope reflector, so as to utilize the multiple reflections of the conductive metal light reflector layer 80 and the bridge reflector layer 82, The light extraction rate of the excitation light L is increased.

Please refer to FIG. 10 again, when the light-emitting semiconductor layer 30 is a larger-sized chip (eg, 3mm×3mm), the circuit can be configured using the concept of module expansion. More specifically, the present invention can further include a plurality of auxiliary N-type electrodes 90. The plurality of auxiliary N-type electrodes 90 are centered on the ohmic contact metal layer 40 and are disposed on the N-type semiconductor layer 33 in a scattered manner, and the plurality of auxiliary N-type electrodes 90 are respectively disposed on the N-type semiconductor layer through a The N-type electrode conductive line 91 on 33 is connected to the ohmic contact metal layer 40, and for the sake of clarity, the ohmic contact metal layer 40 and the N-type electrode conductive line 91 are shown For the connection relationship, the bridge conductive layer 52 above the ohmic contact metal layer 40 is omitted and not drawn. And the plurality of auxiliary N-type electrodes 90 are respectively connected to the N-type semiconductor layer 33 through an auxiliary ohmic contact metal layer 901 . And in order to make the working current (not shown in FIG. 10 ) more dispersed, the contact surfaces of the plurality of N-type electrode conductive lines 91 and the N-type semiconductor layer 33 may respectively have a line insulating layer 92, that is to say, the working current is only It can enter the N-type semiconductor layer 33 from the ohmic contact metal layer 40 and the plurality of auxiliary N-type electrodes 90. It can be seen from the current density contour line P3 of the operating current that part of the operating current can be guided to the N-type semiconductor layer. The surrounding area of 33, that is, where the plurality of auxiliary N-type electrodes 90 are located, can improve the uniformity of light emission.

Please refer to FIG. 11 again. In the application of large-sized wafers, as shown in FIG. 1 , the auxiliary P-type electrode 70 may also be included. The auxiliary P-type electrode 70 is disposed on the side region 22 of the conductive substrate 20 . superior. And in order to further disperse the current, the P-type electrode 10 and the conductive substrate 20 (not drawn in FIG. 11 ) can be divided by a plurality of insulating spacers 11 , and the plurality of insulating spacers 11 can be insulated by forming a gap by a semiconductor etching process. As a result, the plurality of insulating isolation channels 11 can divide the P-type electrode 10 to form a plurality of P-type sub-electrodes 101, and the positions of the plurality of P-type sub-electrodes 101 correspond to the plurality of auxiliary N-type electrodes 90 respectively, and one of the P-type sub-electrodes 101 The P-type sub-electrode 101 is connected to the auxiliary P-type electrode 70 and the P-type sub-electrode 101 of the auxiliary P-type electrode 70, and is selectively connected to the P-type sub-electrode 101 through a plurality of P-type conductive lines 12 disposed on the plurality of insulating isolation channels 11. For the plurality of P-type sub-electrodes 101, the plurality of P-type sub-electrodes 101 connected to the auxiliary P-type electrodes 70 are arranged at intervals. That is to say, only a part of the plurality of P-type sub-electrodes 101 are electrically connected to the auxiliary P-type electrode 70, so when higher current operation and more forced P-side current distribution are required, the current can be specified to pass only through the P-type electrodes. The electrode 10 or the auxiliary P-type electrode 70 is used with the ohmic contact metal layer 40 to generate a working current, which can further disperse the current forcibly, improve the degree of heat source dispersion, and increase the heat dissipation effect.

As mentioned above, the features of the present invention include at least:

1. The structure design of vertical light-emitting diodes is adopted, which has high axial light characteristics.

2. Using the arrangement of the N-type electrode bridging structure, the N-type electrode can be arranged above the side region, and the operating current can be guided to the center of the N-type semiconductor layer as the starting point for diffusion. High current dispersion can avoid the interference of gold wires in the package caused by the placement of the N-type electrode in the center and the local high current problem caused by the placement of the N-type electrode on the edge design, which can not only improve the luminous efficiency, but also increase the reliability of components Spend.

3. Through the setting of the electrode reflection layer and the bridge reflection layer, and the conductive metal light reflection layer, the originally shielded light is reflected multiple times and emitted from the light exit surface to increase the light extraction rate of the excitation light .

4. The light-emitting semiconductor layer is not provided under the N-type electrode, and the light-emitting semiconductor layer is not damaged by stress during the wire bonding process and becomes brittle, which can prevent the N-type semiconductor layer from being damaged by wire bonding, and can make the wire bonding strength safe. The increase is beneficial to the good bonding of wire bonding, which can greatly reduce the long-term reliability risk.

5. When the encapsulant of the subsequent encapsulation process is under stress, there is no risk of cracking or separation of the light-emitting semiconductor layer caused by wire bonding.

6. Using the double-electrode design of the P-type electrode and the auxiliary P-type electrode can effectively disperse the working current, which is conducive to higher current operation, and can effectively improve the unevenness or existence of the connection between the P-type electrode and the auxiliary P-type electrode and the package body. When there are too many pores, the risk of local high heat and component failure is caused.

7. When the light-emitting semiconductor layer is a larger size chip (eg 3mm x 3mm), the concept of module expansion can be used, through the arrangement of the plurality of auxiliary N-type electrodes, the plurality of N-type electrode conductive lines and the plurality of line insulating layers , disperse and guide the working current into the N-type semiconductor layer from the ohmic contact metal layer and the plurality of auxiliary N-type electrodes, and effectively disperse the working current to improve the uniformity of light emission.

8. Compared with US Patent No. US8319250, the present invention has a relatively simple manufacturing process, low cost, better structural strength, and greater resistance to physical external force damage; it also increases the current dispersion effect of the P-type electrode.

10: P-type electrode

20: Conductive substrate

21: Central District

22: Side Zone

23: Buffer layer

24: Bonding layer

25: Alternative substrates

30: Light-emitting semiconductor layer

31: P-type semiconductor layer

32: Quantum Well Layer

33: N-type semiconductor layer

40: Ohmic contact metal layer

50: N-type electrode jumper structure

51: Jumper insulation

52: Jumper conductive layer

60: N-type electrode

70: Auxiliary P-type electrode

80: Conductive metal light reflection layer

81: Electrode reflection layer

82: Bridge the reflective layer

Claims (17)

A vertical light-emitting diode structure with high current dispersion and high reliability, comprising: a P-type electrode; a conductive substrate, one side of the conductive substrate is provided with the P-type electrode, and the other side of the conductive substrate The side has a central area and a side area adjacent to the central area; a light-emitting semiconductor layer, the light-emitting semiconductor layer is disposed on the central area of the conductive substrate, and the light-emitting semiconductor layer includes a light-emitting semiconductor layer disposed on the conductive substrate A P-type semiconductor layer, a quantum well layer disposed on the P-type semiconductor layer, and an N-type semiconductor layer disposed on the quantum well layer; an ohmic contact metal layer, the ohmic contact metal layer disposed on the N-type The center of the semiconductor layer is in ohmic contact with the N-type semiconductor layer; an N-type electrode bridging structure, the N-type electrode bridging structure has a bridging insulating layer and a bridging conductive layer, and the bridging insulating layer is arranged across the On the N-type semiconductor layer and the side region of the conductive substrate, and the jumper insulating layer is adjacent to the ohmic contact metal layer, the jumper conductive layer is disposed on the jumper insulating layer, and the jumper is conductive One end of the layer is connected to the ohmic contact metal layer, and the other end of the bridging conductive layer extends to the side region of the conductive substrate; and an N-type electrode is arranged on the bridging conductive layer and is located on the side above the area. The vertical light-emitting diode structure as claimed in claim 1, further comprising an auxiliary P-type electrode disposed on the side region of the conductive substrate. The vertical light emitting diode structure of claim 2, wherein the side region surrounds the central region, and the auxiliary P-type electrode and the N-type electrode are located on the side region on the same side of the central region. The vertical light emitting diode structure of claim 2, wherein the side region surrounds the central region, and the auxiliary P-type electrode and the N-type electrode are located on the side region on different sides of the central region. The vertical light-emitting diode structure of claim 2, wherein any one of the P-type electrode and the auxiliary P-type electrode is selected as a first electrode, and the N-type electrode is used as a second electrode, and the A working voltage is supplied between the first pole and the second pole. The vertical light-emitting diode structure of claim 2, wherein the P-type electrode and the auxiliary P-type electrode are both used as a first electrode, the N-type electrode is used as a second electrode, and the A working voltage is supplied between one pole and the second pole. The vertical light-emitting diode structure of claim 1, further comprising at least one auxiliary conductive circuit, the at least one auxiliary conductive circuit is disposed on the N-type semiconductor layer and connected to the ohmic contact metal layer, and the at least one auxiliary conductive circuit is connected to the ohmic contact metal layer. The auxiliary conductive lines are respectively connected to the N-type semiconductor layer through an auxiliary ohmic contact metal layer. The vertical light-emitting diode structure according to claim 7, wherein the at least one auxiliary conductive line is plural and diverges toward the surrounding. The vertical light emitting diode structure of claim 1, wherein a conductive metal light reflection layer is disposed on the conductive substrate adjacent to the light emitting semiconductor layer. The vertical light emitting diode structure as claimed in claim 9, wherein a contact surface between the ohmic contact metal layer and the N-type semiconductor layer is provided with an electrode reflection layer protruding toward the N-type semiconductor layer. The vertical light-emitting diode structure according to claim 10, wherein the shape of the electrode reflection layer is any one selected from a single convex mirror, a continuous convex mirror and a multiple micro-inclined mirror. The vertical light emitting diode structure as claimed in claim 9, wherein a bridge reflective layer protruding toward the bridge insulating layer is disposed on the contact surface of the bridge conductive layer and the bridge insulating layer. The vertical light-emitting diode structure according to claim 12, wherein the shape of the bridging reflective layer is any one selected from the group consisting of a single convex reflector, a continuous convex reflector, and a multiple micro-slope reflector. The vertical light-emitting diode structure as claimed in claim 1, further comprising a plurality of auxiliary N-type electrodes, the plurality of auxiliary N-type electrodes centering on the ohmic contact metal layer and scattered on the N-type semiconductor layer, And the plurality of auxiliary N-type electrodes are respectively connected to the ohmic contact metal layer by an N-type electrode conductive circuit disposed on the N-type semiconductor layer, and the contact surfaces of the plurality of N-type electrode conductive circuits and the N-type semiconductor layer are respectively A circuit insulating layer is provided, and the plurality of auxiliary N-type electrodes are respectively connected to the N-type semiconductor layer through an auxiliary ohmic contact metal layer. The vertical light-emitting diode structure as claimed in claim 14, further comprising an auxiliary P-type electrode disposed on the side region of the conductive substrate. The vertical light-emitting diode structure as claimed in claim 15, wherein the P-type electrode and the conductive substrate are divided by a plurality of insulating spacers, so that the P-type electrode is divided into a plurality of P-type sub-electrodes, and the plurality of P-type sub-electrodes are formed. The positions of the sub-electrodes respectively correspond to the plurality of auxiliary N-type electrodes, and at the same time, one of the P-type sub-electrodes is connected to the auxiliary P-type electrode, and is also connected to the P-type sub-electrodes of the auxiliary P-type electrode. The P-type conductive lines of the isolation channel are selectively connected to the plurality of P-type sub-electrodes, so that the plurality of P-type sub-electrodes connected to the auxiliary P-type electrodes are arranged at intervals. The vertical light-emitting diode structure of claim 1, wherein the conductive substrate comprises a buffer layer, a bonding layer and a substitute substrate, the bridging insulating layer and the light-emitting semiconductor layer are disposed on the buffer layer, the The P-type electrode is disposed on the substitute substrate, and the bonding layer bonds and fixes the buffer layer and the substitute substrate.

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