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TWI624914B - Resin sheet for electronic component sealing, resin sealed semiconductor device, and method for manufacturing resin sealed semiconductor device - Google Patents

Resin sheet for electronic component sealing, resin sealed semiconductor device, and method for manufacturing resin sealed semiconductor device Download PDF

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Publication number
TWI624914B
TWI624914B TW103104995A TW103104995A TWI624914B TW I624914 B TWI624914 B TW I624914B TW 103104995 A TW103104995 A TW 103104995A TW 103104995 A TW103104995 A TW 103104995A TW I624914 B TWI624914 B TW I624914B
Authority
TW
Taiwan
Prior art keywords
resin
electronic component
sealing
resin sheet
semiconductor device
Prior art date
Application number
TW103104995A
Other languages
English (en)
Other versions
TW201442166A (zh
Inventor
Eiji Toyoda
Hiroyuki Mori
yusaku Shimizu
Original Assignee
Nitto Denko Corp
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Filing date
Publication date
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Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW201442166A publication Critical patent/TW201442166A/zh
Application granted granted Critical
Publication of TWI624914B publication Critical patent/TWI624914B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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Abstract

一種電子零件密封用樹脂片材，其係用於製造樹脂密封型半導體裝置者，且相對於電子零件密封用樹脂片材整體而含有70~93重量%之無機填充劑，且厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下。

Description

電子零件密封用樹脂片材、樹脂密封型半導體裝置及樹脂密封型半導體裝置之製造方法
本發明係關於一種電子零件密封用樹脂片材、樹脂密封型半導體裝置及樹脂密封型半導體裝置之製造方法。
先前，於半導體裝置之製造中，係於導線架或電路基板等各種基板上搭載半導體晶片後，以覆蓋半導體晶片等電子零件之方式進行樹脂密封。於以上述方式製造之樹脂密封型半導體裝置中，存在若密封樹脂之吸水性較高，則可靠性降低之問題。因此，先前藉由使用吸水性較低之密封樹脂，實現樹脂密封型半導體裝置之可靠性之提高。
另一方面，先前已知有具有耐透濕性之聚丙烯系樹脂片材(例如，參照專利文獻1)。專利文獻1中所記載之聚丙烯系樹脂片材可用於各種包裝或容器。
[先前技術文獻] [專利文獻]
【特許文献1】日本專利特開平07-148853號公報
然而，於樹脂密封型半導體裝置之製造中，存在即便使用吸水性較低之密封樹脂，亦存在可靠性未提高之情形之問題。
本發明係鑒於上述問題方面而完成者，其目的在於提供一種可 提高樹脂密封型半導體裝置之可靠性之電子零件密封用樹脂片材及可靠性較高之樹脂密封型半導體裝置。
本申請案發明者等人為了解決上述先前之問題方面而進行研究，結果發現樹脂密封型半導體裝置中，密封樹脂之透濕度與可靠性相關，從而完成本發明。
即，本發明之電子零件密封用樹脂片材之特徵在於：其係用於製造樹脂密封型半導體裝置者，且相對於電子零件密封用樹脂片材整體，含有70~93重量%之無機填充劑，厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下。
先前，一般認為樹脂密封型半導體裝置之可靠性依賴於密封樹脂之吸水性，並未對透濕度進行研究。因此，發生雖然密封樹脂之吸水性較低，但仍無法確保樹脂密封型半導體裝置之可靠性之情況。本發明者等人進行銳意研究，結果查明，若密封樹脂之透濕度較低，則樹脂密封型半導體裝置之可靠性提高。作為其理由，本發明者等人推測係由於若密封樹脂之透濕度較低，則水難以自外部到達至電子零件。即，推測於使用即便吸水性較低但透濕度較高之密封樹脂之情形時，由於水最終到達至電子零件，因此樹脂密封型半導體裝置之可靠性降低。
藉由上述構成，相對於電子零件密封用樹脂片材整體而含有70~93重量%之無機填充劑，厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下，因此水不易自外部到達至電子零件。其結果，可提高樹脂密封型半導體裝置之可靠性。再者，將透濕度之評價條件設為溫度85℃、濕度85%、168小時之原因在於，符合半導體封裝之耐焊錫可靠性試驗 (MSL(moisture sensitivity level，濕敏度)試驗)中最嚴格之吸濕條件即Level 1條件。
再者，於厚度並非250μm之情形時，藉由下述式1進行換算，使其成為溫度85℃、濕度85%、168小時之條件下之厚度設為250μm時之透濕度。
(式1)A-(250-D)×0.101
(A：透濕度，D：樣品厚度(μm))
上述構成中，厚度設為250μm時之熱硬化後之透濕度較佳為於溫度60℃、濕度90%、168小時之條件下為100g/m2‧24小時以下。若厚度設為250μm時之熱硬化後之透濕度於溫度60℃、濕度90%、168小時之條件下為100g/m2‧24小時以下，則可進一步提高樹脂密封型半導體裝置之可靠性。再者，將透濕度之評價條件設為溫度60℃、濕度90%、168小時之原因在於，本條件係半導體封裝之高溫高濕放置試驗中最嚴格之條件之一。
再者，於厚度並非250μm之情形時，藉由下述式2進行換算，使其成為溫度60℃、濕度90%、168小時之條件下之厚度設為250μm時之透濕度。
(式2)A-(250-D)×0.010
(A：透濕度，D：樣品厚度(μm))
上述構成中，較佳為藉由混練擠壓而製造。本發明之電子零件密封用樹脂片材由於相對於電子零件密封用樹脂片材整體而含有70~93重量%之無機填充劑，因此難以成型為片狀。因此，藉由混練擠壓進行製造，藉此可製成孔隙(氣泡)等較少之均勻之片材。其結果，可進而實現低透濕性。
又，本發明之樹脂密封型半導體裝置之特徵在於具備被黏著體、覆晶連接於上述被黏著體之半導體晶片、及密封上述半導體晶片 之電子零件密封用樹脂片材，上述電子零件密封用樹脂片材相對於電子零件密封用樹脂片材整體而含有70~93重量%之無機填充劑，厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下，於上述被黏著體與上述半導體晶片之間形成有空隙。
加速度感測器、壓力感測器、陀螺儀感測器等MEMS(Micro Electro Mechanical Systems，微機電系統)或表面聲波濾波器(surface acoustic wave filter，SAW濾波器)中，存在結構上必需於被黏著體與半導體晶片之間形成空隙者。然而，一旦水自外部滲入此種空隙中，則難以排除，由該水導致樹脂密封型半導體裝置之可靠性降低。
根據上述構成，由於電子零件密封用樹脂片材相對於電子零件密封用樹脂片材整體而含有70~93重量%之無機填充劑，厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下，因此水難以自外部滲入被黏著體與半導體晶片之間之空隙中。其結果，可提高樹脂密封型半導體裝置之可靠性。
又，本發明之樹脂密封型半導體裝置之特徵在於含有上述所記載之電子零件密封用樹脂片材。
根據上述構成，由於電子零件密封用樹脂片材相對於電子零件密封用樹脂片材整體而含有70~93重量%之無機填充劑，厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下，因此水不易自外部到達至電子零件。其結果，可提高樹脂密封型半導體裝置之可靠性。
又，本發明之樹脂密封型半導體裝置之製造方法之特徵在於具備以覆蓋覆晶連接於被黏著體上之半導體晶片之方式，自半導體晶片側積層電子零件密封用樹脂片材之步驟，上述電子零件密封用樹脂片 材相對於電子零件密封用樹脂片材整體而含有70~93重量%之無機填充劑，厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下。
根據上述構成，由於上述電子零件密封用樹脂片材相對於電子零件密封用樹脂片材整體而含有70~93重量%之無機填充劑，厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下，因此所製造之樹脂密封型半導體裝置中水不易自外部到達至電子零件。其結果，可提高樹脂密封型半導體裝置之可靠性。
2‧‧‧電子零件密封用樹脂片材
3‧‧‧切割保護膠帶
31‧‧‧基材
32‧‧‧黏著劑層
4‧‧‧半導體晶圓
5‧‧‧半導體晶片
51‧‧‧形成於半導體晶片5之電路面側之凸塊
52‧‧‧空隙
6‧‧‧被黏著體
61‧‧‧由被黏著體6之連接墊覆著之接合用導電材料
圖1係表示本實施形態之電子零件密封用樹脂片材之一例之剖面模式圖。
圖2係用以說明本實施形態之樹脂密封型半導體裝置之製造方法之剖面模式圖。
圖3係用以說明本實施形態之樹脂密封型半導體裝置之製造方法之剖面模式圖。
圖4係用以說明本實施形態之樹脂密封型半導體裝置之製造方法之剖面模式圖。
圖5係用以說明本實施形態之樹脂密封型半導體裝置之製造方法之剖面模式圖。
圖6係用以說明本實施形態之樹脂密封型半導體裝置之製造方法之剖面模式圖。
一面參照圖式一面對本發明之實施形態進行說明，但本發明並不限定於該等例。圖1係表示本實施形態之電子零件密封用樹脂片材之一例之剖面模式圖。再者，本說明書中，圖中省略無需說明之部 分，又，存在為容易進行說明而放大或縮小等進行圖示之部分。
(電子零件密封用樹脂片材)
如圖1所示，電子零件密封用樹脂片材2具有片狀之形態。電子零件密封用樹脂片材2係用於製造樹脂密封型半導體裝置(例如，如圖6所示之樹脂密封型半導體裝置50)。
電子零件密封用樹脂片材2之厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下，較佳為200g/m2‧24小時以下，更佳為100g/m2‧24小時以下。又，雖然上述透濕度越小越佳，但例如係1g/m2‧24小時以上。由於厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下，因此水不易自外部到達至電子零件。其結果，可提高含有電子零件密封用樹脂片材2之樹脂密封型半導體裝置之可靠性。
又，電子零件密封用樹脂片材2之厚度設為250μm時之熱硬化後之透濕度較佳為於溫度60℃、濕度90%、168小時之條件下為100g/m2‧24小時以下，更佳為50g/m2‧24小時以下，進而較佳為20g/m2‧24小時以下。又，雖然上述透濕度越小越佳，但例如係0.5g/m2‧24小時以上。若厚度設為250μm時之熱硬化後之透濕度於溫度60℃、濕度90%、168小時之條件下為100g/m2‧24小時以下，則可進一步提高含有電子零件密封用樹脂片材2之樹脂密封型半導體裝置之可靠性。
形成電子零件密封用樹脂片材2之樹脂組合物只要為可用於電子零件(例如，半導體晶片5)之密封者，則並無特別限定，例如可列舉含有以下之A成分至E成分之樹脂組合物作為較佳者。
A成分：環氧樹脂
B成分：酚系樹脂
C成分：彈性體
D成分：無機填充劑
E成分：硬化促進劑
(A成分)
作為環氧樹脂(A成分)，並無特別限定。例如，可使用三苯甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、改性雙酚A型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、改性雙酚F型環氧樹脂、二環戊二烯型環氧樹脂、酚系酚醛清漆型環氧樹脂、苯氧樹脂等各種環氧樹脂。該等環氧樹脂可單獨使用，亦可併用2種以上。
就確保環氧樹脂之硬化後之韌性及環氧樹脂之反應性之觀點而言，較佳為環氧當量150~250、軟化點或熔點為50~130℃之常溫下為固體者，其中，就可靠性之觀點而言，較佳為三苯甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂。
又，就低應力性之觀點而言，較佳為具有縮醛基或聚氧伸烷基等柔軟性骨架之改性雙酚A型環氧樹脂，由於具有縮醛基之改性雙酚A型環氧樹脂為液體狀，操作良好，因此可尤佳地使用。
環氧樹脂(A成分)之含量較佳為相對於電子零件密封用樹脂片材整體為1~10重量%，更佳為2~5重量%。
(B成分)
酚系樹脂(B成分)只要與環氧樹脂(A成分)之間發生硬化反應，則並無特別限定。例如，可使用酚系酚醛清漆樹脂、苯酚芳烷基樹脂、聯苯芳烷基樹脂、二環戊二烯型酚系樹脂、甲酚酚醛清漆樹脂、可溶酚醛樹脂等。該等酚系樹脂可單獨使用，亦可併用2種以上。
作為酚系樹脂，就與環氧樹脂(A成分)之反應性之觀點而言，較佳為使用羥基當量為70~250、軟化點為50~110℃者，其中就硬化反 應性較高之觀點而言，可較佳地使用酚系酚醛清漆樹脂。又，就可靠性之觀點而言，亦可較佳地使用如苯酚芳烷基樹脂或聯苯芳烷基樹脂之低吸濕性者。
就硬化反應性之觀點而言，環氧樹脂(A成分)與酚系樹脂(B成分)之調配比率較佳為以相對於環氧樹脂(A成分)中之環氧基1當量，酚系樹脂(B成分)中之羥基之合計達到0.7~1.5當量之方式進行調配，更佳為0.9~1.2當量。
(C成分)
與環氧樹脂(A成分)及酚系樹脂(B成分)一併使用之彈性體(C成分)係對樹脂組合物賦予將電子零件密封用樹脂片材製成片狀之情形時之半導體晶片5之密封所需之可撓性者，只要為發揮此種作用者，則其結構並無特別限定。例如，可使用聚丙烯酸酯等各種丙烯酸系共聚物、苯乙烯丙烯酸酯系共聚物、丁二烯橡膠、苯乙烯-丁二烯橡膠(SBR)、乙烯-乙酸乙烯酯共聚物(EVA)、異戊二烯橡膠、丙烯腈橡膠等橡膠質聚合物。其中，就易於分散於環氧樹脂(A成分)中，且與環氧樹脂(A成分)之反應性亦較高，因此可進一步提高所得之電子零件密封用樹脂片材之耐熱性或強度之觀點而言，較佳為使用丙烯酸系共聚物。該等可單獨使用，亦可併用2種以上。
再者，丙烯酸系共聚物可藉由例如按照慣例使設為特定之混合比之丙烯酸系單體混合物進行自由基聚合而合成。作為自由基聚合之方法，可使用以有機溶劑為溶劑而進行之溶液聚合法、或者一面使原料單體分散於水中一面進行聚合之懸浮聚合法。作為此時所使用之聚合起始劑，例如，可使用2,2'-偶氮雙異丁腈、2,2'-偶氮雙-(2,4-二甲基戊腈)、2,2'-偶氮雙-4-甲氧基-2,4-二甲基戊腈、其他偶氮系或重氮系聚合起始劑，過氧化苯甲醯及甲基乙基酮過氧化物等過氧化物系聚合起始劑等。再者，於懸浮聚合之情形時，較理想為添加如例如聚丙烯 醯胺、聚乙烯醇之分散劑。
彈性體(C成分)之含量較佳為相對於電子零件密封用樹脂片材整體為1~10重量%，更佳為2~5重量%。藉由將彈性體(C成分)之含量設為1重量%以上，可對片材賦予可撓性、韌性。又，藉由將彈性體(C成分)之含量設為10重量%以下，可呈現作為封裝所需之成型物強度。
又，彈性體(C成分)相對於環氧樹脂(A成分)之重量比率(C成分之重量/A成分之重量)較佳為設為0.3~2，更佳為設為0.7~1.5。藉由將上述重量比率設為0.3以上，可對片材賦予韌性及可撓性。另一方面，藉由將上述重量比率設為2以下，可維持硬化後之封裝之可靠性。
(D成分)
無機質填充劑(D成分)並無特別限定，可使用先前公知之各種填充劑，例如，可列舉石英玻璃、滑石、二氧化矽(熔融二氧化矽或結晶性二氧化矽等)、氧化鋁、氮化鋁、氮化矽等粉末。該等可單獨使用，亦可併用2種以上。
其中，就透濕性較低之方面而言，較佳為使用二氧化矽粉末，更佳為使用二氧化矽粉末中之熔融二氧化矽粉末。作為熔融二氧化矽粉末，可列舉球狀熔融二氧化矽粉末、破碎熔融二氧化矽粉末，就流動性之觀點而言，尤佳為使用球狀熔融二氧化矽粉末。其中，較佳為使用平均粒徑為0.1~50μm之範圍者，尤佳為使用為0.3~25μm之範圍者。
再者，平均粒徑例如可藉由使用任意取自母群之試樣，利用雷射繞射散射式粒度分佈測定裝置進行測定而導出。
無機質填充劑(D成分)之含量較佳為相對於電子零件密封用樹脂片材整體為70~93重量%，更佳為75~90重量%，進而較佳為80~88 重量%。無機填充劑由於透濕性較低，故藉由將含量設為70重量%以上，可降低電子零件密封用樹脂片材2之透濕度。另一方面，藉由將無機填充劑之含量設為93重量%以下，可容易地將電子零件密封用樹脂片材2製成片狀。
(E成分)
硬化促進劑(E成分)只要為進行環氧樹脂與酚系樹脂之硬化者，則並無特別限定，就硬化性與保存性之觀點而言，可較佳地使用三苯基膦或四苯基硼酸四苯基鏻等有機磷系化合物、或咪唑系化合物。該等硬化促進劑可單獨使用，亦可與其他硬化促進劑併用。
硬化促進劑(E成分)之含量較佳為相對於環氧樹脂(A成分)及酚系樹脂(B成分)之合計100重量份為0.1~5重量份。
(其他成分)
又，於樹脂組合物中除A成分至E成分以外，亦可添加阻燃劑成分。作為阻燃劑成分，例如可使用磷腈等有機磷系阻燃劑，氫氧化鋁、氫氧化鎂、氫氧化鐵、氫氧化鈣、氫氧化錫、複合化金屬氫氧化物等各種金屬氫氧化物等。就於樹脂組合物中之分散性之觀點而言，較佳為有機磷系阻燃劑，但視情況而言，就可以相對較少之添加量發揮阻燃性之觀點、或成本上之觀點而言，亦存在使用氫氧化鋁或氫氧化鎂之情況。該等可單獨使用，亦可組合使用。
再者，樹脂組合物除上述各成分以外，亦可視需要而適當調配以碳黑為主之顏料等其他添加劑。
(電子零件密封用樹脂片材之製作方法)
關於電子零件密封用樹脂片材2之製作方法，以下對電子零件密封用樹脂片材2為片狀熱硬化型樹脂層之情形時之順序進行說明。
首先，藉由混合上述各成分而製備樹脂組合物。混合方法只要為將各成分均勻地分散混合之方法，則並無特別限定。其後，例如， 塗佈將各成分溶解或分散於有機溶劑等中而成之清漆，形成為片狀。或者亦可藉由利用捏合機等直接將各調配成分混練而製備混練物，擠壓以上述方式獲得之混練物而形成為片狀。
作為使用清漆之具體製作順序，係根據常法將上述A~E成分及視需要之其他添加劑適當混合，使其均勻溶解或分散於有機溶劑中，製備清漆。繼而，將上述清漆塗佈於聚酯等支持體上並使其乾燥，藉此可獲得電子零件密封用樹脂片材2。然後視需要，為保護電子零件密封用樹脂片材之表面，亦可貼合聚酯膜等剝離片材。剝離片材於密封時剝離。
作為上述有機溶劑，並無特別限定，可使用先前公知之各種有機溶劑，例如甲基乙基酮、丙酮、環己酮、二烷、二乙基酮、甲苯、乙酸乙酯等。該等可單獨使用，亦可併用2種以上。此外，通常較佳為以清漆之固形物成分濃度達到30~60重量%之範圍之方式使用有機溶劑。
有機溶劑乾燥後之片材之厚度並無特別限制，就厚度之均勻性與殘留溶劑量之觀點而言，通常較佳為設定為5~100μm，更佳為20~70μm。
另一方面，於使用混練之情形時，藉由利用攪拌機等公知之方法混合上述A~E成分及視需要之其他添加劑之各成分，其後進行熔融混練而製備混練物。作為熔融混練之方法，並無特別限定，例如，可列舉藉由混練輥、加壓式捏合機、擠壓機等公知之混練機進行熔融混練之方法等。作為混練條件，溫度只要為上述各成分之軟化點以上，則並無特別限制，例如為30~150℃，若考慮環氧樹脂之熱硬化性，則較佳為40~140℃，進而較佳為60~120℃，時間例如為1~30分鐘，較佳為5~15分鐘。藉此可製備混練物。
藉由利用擠壓成形使獲得之混練物成形，可獲得電子零件密封 用樹脂片材2。具體而言，不冷卻熔融混練後之混練物而直接於高溫狀態下進行擠壓成形，藉此可形成電子零件密封用樹脂片材2。作為此種擠壓方法，並無特別限制，可列舉T模擠壓法、輥軋法、輥式混練法、共擠壓法、壓延成形法等。作為擠壓溫度，只要為上述各成分之軟化點以上，則並無特別限制，若考慮環氧樹脂之熱硬化性及成形性，則例如為40~150℃，較佳為50~140℃，進而較佳為70~120℃。藉由以上方式，可形成電子零件密封用樹脂片材2。
其中，由於相對於電子零件密封用樹脂片材2整體而含有70~93重量%之無機填充劑，因此就成為片狀之成型性之觀點而言，較佳為利用混練擠壓而製造。藉由利用混練擠壓而製造，可製成孔隙(氣泡)等較少之均勻之片材。其結果，進而可實現低透濕性。
以上述方式獲得之電子零件密封用樹脂片材2亦可視需要而以成為所需之厚度之方式積層而使用。即，片狀樹脂組合物可以單層結構使用，亦可用作積層為2層以上之多層結構而成之積層體。
(樹脂密封型半導體裝置之製造方法)
繼而，以下一面參照圖2~圖6一面對本實施形態之樹脂密封型半導體裝置之製造方法進行說明。圖2~圖6係用以說明本實施形態之樹脂密封型半導體裝置之製造方法之剖面模式圖。
上述半導體裝置之製造方法至少具備以覆蓋覆晶連接於被黏著體上之半導體晶片之方式自半導體晶片側積層電子零件密封用樹脂片材之步驟。
[安裝步驟]
首先，如圖2所示，於黏著劑層32積層於基材31上而成之切割保護膠帶3之黏著劑層32上貼合半導體晶圓4，使其接著保持並固定(安裝步驟)。將黏著劑層32貼合於半導體晶圓4之背面。所謂半導體晶圓4之背面，係指與電路面為相反側之面(亦稱為非電路面、非電極形成 面等)。貼合方法並無特別限定，較佳為利用壓合之方法。壓合通常係藉由壓合輥等擠壓方法一面擠壓一面進行。再者，作為切割保護膠帶3，可使用先前公知者。
作為基材31，例如，亦可使用：低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴，乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯，聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳香族聚醯胺(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、聚矽氧樹脂、金屬(箔)、紙等。
作為用於形成黏著劑層32之黏著劑，例如，可使用丙烯酸系黏著劑、橡膠系黏著劑等通常之感壓性黏著劑。又，黏著劑層32可藉由紫外線硬化型黏著劑而形成。紫外線硬化型黏著劑可藉由紫外線之照射增大交聯度，容易地降低其黏著力，切割步驟後藉由紫外線照射可使拾取變得容易。
[切割步驟]
繼而，如圖3所示，進行半導體晶圓4之切割。藉此，將半導體晶圓4切斷為特定尺寸而單片化(小片化)，製造半導體晶片5。切割例如可根據慣例自半導體晶圓4之電路面側進行。本步驟所使用之切割裝置並無特別限定，可使用先前公知者。
再者，於進行切割保護膠帶3之延伸之情形時，該延伸可使用先前公知之延伸裝置進行。延伸裝置具有可介隔切晶環將切割保護膠帶3向下方按壓之環狀之外環、及直徑小於外環並支持切割保護膠帶3之 內環。藉由該延伸步驟，於後文敍述之拾取步驟中，可防止相鄰之半導體晶片彼此接觸而破損。
[拾取步驟]
為了回收接著固定於切割保護膠帶3上之半導體晶片5，如圖4所示，進行半導體晶片5之拾取，將半導體晶片5自切割保護膠帶3剝離。拾取之方法並無特別限定，可採用先前公知之各種方法。例如，可列舉利用針將各個半導體晶片5自基材31側頂出，藉由拾取裝置拾取被頂出之半導體晶片5之方法等。
[覆晶連接步驟]
如圖5所示，藉由覆晶接合方式(覆晶安裝方式)將拾取之半導體晶片5固定於基板等被黏著體。具體而言，根據慣例，以半導體晶片5之電路面(亦稱為表面、電路圖案形成面、電極形成面等)與被黏著體6對向之形態，將半導體晶片5固定於被黏著體6。例如，使形成於半導體晶片5之電路面側之凸塊51與由被黏著體6之連接墊覆著之接合用導電材料(焊錫等)61接觸，一面擠壓一面使導電材料熔融，藉此確保半導體晶片5與被黏著體6之電性導通，可使半導體晶片5固定於被黏著體6上(覆晶接合步驟)。此時，於半導體晶片5與被黏著體6之間形成有空隙，該空隙間之距離通常為15μm~300μm左右。再者，將半導體晶片5覆晶接合(覆晶連接)於被黏著體6上後，亦可對半導體晶片5與被黏著體6之對向面或間隙進行清洗。又，該空隙可根據半導體裝置之用途而填充密封材(密封樹脂等)將其密封，亦可以空隙之形式予以保留。其中，於加速度感測器、壓力感測器、陀螺儀感測器等MEMS或表面聲波濾波器(SAW濾波器)中，由於在結構上必需於被黏著體與半導體晶片之間形成空隙，因此於此種用途中，以空隙之形式予以保留。
作為被黏著體6，可使用導線架或電路基板(配線電路基板等)等 各種基板。此種基板之材質並無特別限定，可列舉陶瓷基板、或塑膠基板。作為塑膠基板，例如，可列舉環氧基板、雙馬來醯亞胺三基板、聚醯亞胺基板等。
於覆晶接合步驟中，凸塊或導電材料之材質並無特別限定，例如，可列舉錫-鉛系金屬材、錫-銀系金屬材、錫-銀-銅系金屬材、錫-鋅系金屬材、錫-鋅-鉍系金屬材等焊錫類(合金)，或金系金屬材、銅系金屬材等。
再者，於覆晶接合步驟中，使導電材料熔融而將半導體晶片5之電路面側之凸塊、與被黏著體6之表面之導電材料連接，作為該導電材料之熔融時之溫度，通常為260℃左右(例如，250℃~300℃)。
繼而，視需要而進行用以密封經覆晶接合之半導體晶片5與被黏著體6之間之間隙的密封步驟。密封步驟係使用底填充用密封樹脂進行。此時之密封條件並無特別限定，通常可藉由於175℃下加熱60秒~90秒而進行密封樹脂之熱硬化，但本發明並不限定於此，例如可於165℃~185℃下進行數分鐘固化。
作為上述底填充用密封樹脂，只要為具有絕緣性之樹脂(絕緣樹脂)，則並無特別限制，可自公知之密封樹脂等密封材中適當選擇而使用，更佳為具有彈性之絕緣樹脂。作為底填充用密封樹脂，例如，可列舉含有環氧樹脂之樹脂組合物等。作為環氧樹脂，可列舉上述所例示之環氧樹脂等。又，作為由含有環氧樹脂之樹脂組合物形成之底填充用密封樹脂，作為樹脂成分，除環氧樹脂以外，亦可含有環氧樹脂以外之熱硬化性樹脂(酚系樹脂等)、或熱塑性樹脂等。再者，作為酚系樹脂，亦可用作環氧樹脂之硬化劑，作為此種酚系樹脂，可列舉上述所例示之酚系樹脂等。
[電子零件密封用樹脂片材之積層步驟]
於電子零件密封用樹脂片材之積層步驟中，以覆蓋半導體晶片5 之方式自半導體晶片5側將電子零件密封用樹脂片材2積層於被黏著體6上(參照圖6)。該電子零件密封用樹脂片材2係作為用以保護半導體晶片5及其附帶之要素免受外部環境干擾之密封樹脂而發揮功能。
電子零件密封用樹脂片材2之積層方法並無特別限定，可列舉如下方法：將用以形成電子零件密封用樹脂片材之樹脂組合物之熔融混練物擠壓成形，將擠壓成形物自半導體晶片5側載置於被黏著體6上並進行壓製，藉此一次性進行電子零件密封用樹脂片材之形成與積層；將用以形成電子零件密封用樹脂片材之樹脂組合物自半導體晶片5側塗佈於被黏著體6上，其後進行乾燥；將該樹脂組合物塗佈於脫模處理片材上，將塗佈膜乾燥而形成電子零件密封用樹脂片材2後，將該電子零件密封用樹脂片材2自半導體晶片5側轉印至被黏著體6上；等。
由於電子零件密封用樹脂片材2為片狀，因此於被覆半導體晶片5時，僅自半導體晶片5側貼附於被黏著體6上即可埋入半導體晶片5，可提高半導體裝置之生產效率。於該情形時，可藉由熱壓或貼合機等公知之方法將電子零件密封用樹脂片材2積層於被黏著體6上。作為熱壓條件，溫度例如為40~120℃，較佳為50~100℃，壓力例如為50~2500kPa，較佳為100~2000kPa，時間例如為0.3~10分鐘，較佳為0.5~5分鐘。又，若考慮電子零件密封用樹脂片材2對半導體晶片5之密接性及追隨性之提高，較佳為於減壓條件下(例如10~2000Pa)下進行壓製。
以上述方式自半導體晶片5側將電子零件密封用樹脂片材2積層於被黏著體6上後，使電子零件密封用樹脂片材2硬化。電子零件密封用樹脂片材2之硬化係於120℃至190℃之溫度範圍、1分鐘至60分鐘之加熱時間、0.1MPa至10MPa之壓力下進行。藉由以上，可獲得樹脂密封型半導體裝置50。尤其是於被黏著體6與半導體晶片5之間未使用 底填充用密封樹脂之情形時，可製造於被黏著體6與半導體晶片5之間形成有空隙52之樹脂密封型半導體裝置50。
上述實施形態中已對將電子零件密封用樹脂片材用於製造覆晶型半導體裝置之情形進行說明。然而，本發明之電子零件密封用樹脂片材並不限定於該例，亦可用於製造半導體晶片之背面貼附於被黏著體之半導體裝置。
上述實施形態中已對於半導體晶片之背面未貼附任何物品之情形進行說明，但本發明並不限定於該例，可於半導體晶片之背面貼附覆晶型半導體背面用膜。覆晶型半導體背面用膜係於藉由覆晶接合將半導體晶片安裝於基板上時，用以保護半導體晶片之背面(露出之背面)者，可採用先前公知者。
上述實施形態中已對以覆蓋覆晶連接於被黏著體上之半導體晶片之方式自半導體晶片側積層電子零件密封用樹脂片材之情形進行說明，但本發明之電子零件密封用樹脂片材並不限於半導體晶片，亦可以覆蓋其他電子零件(例如，電容器、電阻等)之方式進行積層。即，本發明之電子零件密封用樹脂片材並不限定於半導體晶片之埋入，亦可用於其他電子零件之埋入。
[實施例]
以下，關於本發明，利用實施例進行詳細說明，但本發明只要不超出其主旨，則並不限定於以下之實施例。又，各例中，只要無特別說明，份均為重量基準。
<電子零件密封用樹脂片材之混練物之製作>
(實施例1)
藉由雙軸混練機，於120℃下將以下成分混練5分鐘，製備混練物。
A成分(環氧樹脂)：雙酚F型環氧樹脂(東都化成股份有限公司製 造，YSLV-80XY) 3.38份
B成分(酚系樹脂)：具有聯苯芳烷基骨架之酚系樹脂(明和化成公司製造，MEH7851SS) 3.58份
C成分(彈性體)：熱塑性彈性體(Kaneka股份有限公司製造，製品名：SIBSTER 072T) 3.04份
D成分(無機填充劑)：球狀二氧化矽(電氣化學工業公司製造，製品名FB-9454FC，平均粒徑20μm) 88份
E成分(硬化促進劑)：作為硬化觸媒之咪唑系觸媒(四國化成工業股份有限公司製造之2PHZ-PW) 0.119份
其他成分1：碳黑(三菱化學公司製造，#3030B) 0.3份
其他成分2：阻燃劑(苯氧基磷腈低聚物，製品名：FP-100，伏見製藥所製造) 1.58份
繼而，將上述混練物擠壓成形，藉由真空壓製使擠壓成形物成為一定之厚度(本實施例1中為250μm)。真空壓製係使加熱為90度之腔室內成為真空狀態，於5分鐘壓製(壓製壓：2MPa)之條件下進行。 藉此，獲得實施例1之電子零件密封用樹脂片材。其後，於150℃下加熱1小時，使其硬化。
(實施例2~6及比較例1)
除將調配量變更為如表1所示以外，以與實施例1相同之方式獲得實施例2~6及比較例1之電子零件密封用樹脂片材。其後，於150℃下加熱1小時，使其硬化。
(實施例7)
將以下成分溶解於400重量份之甲基乙基酮中，利用均質機以變得均勻之方式進行調配。
A成分1(環氧樹脂1)：(DIC公司製造，EXA-4850-150)3.62份
A成分2(環氧樹脂2)：酚醛清漆型環氧樹脂(大日本油墨公司製造，EPPN501HY) 1.53份
B成分(酚系樹脂)：(群榮化學製造，GS-200) 1.84份
C成分(彈性體)：包含丙烯酸丁酯86份、丙烯腈7份、甲基丙烯酸縮水甘油酯7份之重量平均分子量75萬之丙烯酸系共聚物17.02份
D成分(無機填充劑)：球狀二氧化矽(Admatechs公司製造，SO-E2，平均粒徑0.5μm) 75份
E成分(硬化促進劑)：作為硬化觸媒之咪唑系觸媒(四國化成工業股份有限公司製造之2PHZ-PW) 0.25份
其他成分：碳黑(三菱化學公司製造，#20) 0.74份
繼而，使用缺角輪塗佈機塗佈上述調配物，藉由溶劑乾燥獲得厚度為50μm之樹脂片材。其後，利用加熱至70℃之滾筒貼合機積層5片上述樹脂片材，藉此獲得厚度250μm之實施例7之電子零件密封用樹脂片材。其後，為用於透濕度測定而於150℃下加熱1小時，使其硬化。
(比較例2及比較例3)
除將調配量變更為如表2所示以外，以與實施例7相同之方式獲得比較例2及比較例3之電子零件密封用樹脂片材。其後，於150℃下加熱1小時，使其硬化。
<透濕度測定>
依據JIS Z 0208(杯突法)之規定，測定實施例、比較例所製作之電子零件密封用樹脂片材(熱硬化後)之透濕度。測定條件如下所述。將結果示於表1及表2。
(測定條件1)
溫度85℃、濕度85%、168小時、電子零件密封用樹脂片材之厚 度：250μm
(測定條件2)
溫度60℃、濕度90%、168小時、電子零件密封用樹脂片材之厚度：250μm
<可靠性評價結果>
準備25個1mm×1mm×0.2mmt尺寸之Si晶片(5行×5行，晶片間隔設為0.5mm)藉由金凸塊而超音波連接於厚度0.5mm之氧化鋁基板上而成者(晶片下表面與基板之間隙：20μm)。
繼而，使用實施例及比較例所製作之電子零件密封用樹脂片材，藉由真空壓製進行上述Si晶片之密封(密封條件：50℃、1MPa、1分鐘、真空度1000Pa)，於150℃下硬化1小時。藉此獲得各晶片之下部形成有空隙之狀態之硬化物。其後，藉由切割分割成個別封裝。利用依據JEDEC(Joint Electron Device Engineering Council，美國電子工程設計發展聯合協會)之MSL1(Moisture Sensitivity Level)試驗之方法，於85℃、85%、168小時之條件下使其吸濕。其後，利用IR回焊(infrared reflow，紅外線回焊)裝置進行260℃×3次之吸濕回焊試驗。利用超音波顯微鏡觀察試驗後之封裝，將基板、樹脂間觀察到剝離者設為×，將未觀察到者設為○。將結果示於表1及表2。

Claims (6)

  1. 一種電子零件密封用樹脂片材，其特徵在於：其係用於製造樹脂密封型半導體裝置者，且相對於電子零件密封用樹脂片材整體而含有70~93重量%之無機填充劑，且進而含有選自酚系酚醛清漆樹脂、苯酚芳烷基樹脂及聯苯芳烷基樹脂之群中之1種或2種以上之酚系樹脂，厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下。
  2. 如請求項1之電子零件密封用樹脂片材，其厚度設為250μm時之熱硬化後之透濕度於溫度60℃、濕度90%、168小時之條件下為100g/m2‧24小時以下。
  3. 如請求項1或2之電子零件密封用樹脂片材，其係藉由混練擠壓而製造。
  4. 一種樹脂密封型半導體裝置，其特徵在於：其具備被黏著體、覆晶連接於上述被黏著體之半導體晶片、及密封上述半導體晶片之電子零件密封用樹脂片材，且上述電子零件密封用樹脂片材係相對於電子零件密封用樹脂片材整體而含有70~93重量%之無機填充劑，且進而含有選自酚系酚醛清漆樹脂、苯酚芳烷基樹脂及聯苯芳烷基樹脂之群中之1種或2種以上之酚系樹脂，厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下，於上述被黏著體與上述半導體晶片之間形成有空隙。
  5. 一種樹脂密封型半導體裝置，其含有如請求項1至3中任一項之 電子零件密封用樹脂片材。
  6. 一種樹脂密封型半導體裝置之製造方法，其特徵在於：其包括以覆蓋覆晶連接於被黏著體上之半導體晶片之方式自半導體晶片側積層電子零件密封用樹脂片材之步驟，且上述電子零件密封用樹脂片材係相對於電子零件密封用樹脂片材整體而含有70~93重量%之無機填充劑，且進而含有選自酚系酚醛清漆樹脂、苯酚芳烷基樹脂及聯苯芳烷基樹脂之群中之1種或2種以上之酚系樹脂，厚度設為250μm時之熱硬化後之透濕度於溫度85℃、濕度85%、168小時之條件下為300g/m2‧24小時以下。
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