TWI643242B - Manufacturing method of semiconductor device - Google Patents

Abstract

The method for manufacturing a semiconductor device according to the embodiment of the present invention is to reduce the damage to the semiconductor wafer when the thinned semiconductor wafer is peeled from the supporting substrate. The manufacturing method of the semiconductor device according to the embodiment is at the wire stripping end position E2. The front end of the claw 6A is inserted between the supporting substrate 1 and the bonding layer 2 to provide a peeling surface H1 on the supporting substrate 1. E1, by inserting the front end of the claw 6B between the supporting substrate 1 and the bonding layer 2 to provide a peeling surface H2 on the supporting substrate 1 so that the peeling line LH moves in the peeling direction DH, and the supporting substrate 1 is removed from the semiconductor wafer W Peel off.

Description

Manufacturing method of semiconductor device

An embodiment of the present invention relates to a method for manufacturing a semiconductor device.

In the manufacturing process of a semiconductor device, a semiconductor wafer may be attached to a support substrate before the semiconductor wafer is thinned. After the semiconductor wafer attached to the support substrate is thinned, the semiconductor wafer is peeled from the support substrate.

An embodiment of the present invention provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device can reduce damage to a semiconductor wafer when peeling a thin-filmed semiconductor wafer from a supporting substrate. A method of manufacturing a semiconductor device according to an embodiment is to form a peeling surface on at least a part of the outer periphery of a support substrate that has been bonded to a wafer, the semiconductor element is formed on the surface of the wafer, and the surface is directed toward the support substrate side; From the perspective of the peeling surface, the wafer is separated from the supporting substrate through the geometric center of gravity of the supporting substrate toward the peeling surface.

Hereinafter, a method for manufacturing a semiconductor device according to an embodiment will be described in detail with reference to the accompanying drawings. The present invention is not limited by these embodiments. (First Embodiment) FIGS. 1 (a) to 1 (d) and FIGS. 2 (a) to 2 (b) are cross-sectional views showing a method for manufacturing a semiconductor device according to a first embodiment, and FIGS. 3 (a) to Fig. 3 (c) is a plan view showing a method for manufacturing a semiconductor device according to the first embodiment. In FIG. 1 (a), a device layer DV is formed on the front side of the semiconductor wafer W. At this time, the thickness of the semiconductor wafer W can be set in such a manner that the semiconductor wafer W alone can be stably operated. For example, the thickness of the semiconductor wafer W can be set to 100 μm or more. As a material of the semiconductor wafer W, for example, Si, Ge, SiGe, GaAs, GaAlAs, InP, GaP, GaN, SiC, or InGaAsP can be used. The device layer DV may include an active region formed on the semiconductor wafer W, a wiring layer formed on the semiconductor wafer W, and the like. A channel region, a source layer, and a drain layer can be set in the active region. Gate electrodes and wiring can be provided on the wiring layer. The device formed on the device layer DV may be a memory element or a transistor element. It can also form integrated circuits such as logic circuits, processors, or NAND (Not AND) flash memories. Then, the front surface side of the semiconductor wafer W is fixed to the support substrate 1 by the interposing adhesive layer 2. The shape of the support substrate 1 may correspond to the shape of the semiconductor wafer W. At this time, the shape of the support substrate 1 may be larger than the semiconductor wafer W. The material of the support substrate 1 may be Si or glass. As the material of the subsequent layer 2, a material that can be peeled off by heating or the like and has no adhesiveness after peeling can be used. For example, a thermosetting resin can be used as the material of the second layer. Next, as shown in FIG. 1 (b), the semiconductor wafer W is thinned by polishing the rear surface side of the semiconductor wafer W by a method such as CMP (Chemical Mechanical Polishing). At this time, the thickness of the semiconductor wafer W can be set to 50 μm or less. Furthermore, after the semiconductor wafer W is formed into a thin film, a step of forming a through electrode on the semiconductor wafer W or a step of forming a back electrode on the semiconductor wafer W may be included. Then, as shown in FIG. 1 (c), the back surface side of the semiconductor wafer W is attached to the support tape 3. At this time, the support band 3 can be supported by the ring 4. As the material of the support tape 3, an adhesive resin film or the like can be used. In this case, a dicing tape may be used as the support tape 3. The material of the ring 4 can be, for example, stainless steel. Here, by attaching the semiconductor wafer W to the support tape 3, the semiconductor wafer W can be prevented from being broken even when the support substrate 1 is peeled from the semiconductor wafer W after the semiconductor wafer W is thinned. Then, as shown in FIG. 1 (d), the support tape 3 to which the semiconductor wafer W is attached is fixed to the stage 5. At this time, the support band 3 can be fixed to the table 5 by inserting the ring 4 of the support band 3 into the table 5. In order to improve the stability of the support band 3, a porous suction cup or the like may be used for the table 5. Then, as shown in FIG. 2 (a) and FIG. 3 (a), at the end of the wire stripping position E2, the front end of the claw 6A is inserted between the support substrate 1 and the bonding layer 2 to provide a peeling surface on the support substrate 1. H1. Next, as shown in FIG. 2 (b) and FIG. 3 (b), at the line peeling start position E1, the front end of the claw 6B is inserted between the supporting substrate 1 and the bonding layer 2 to provide a peeling surface on the supporting substrate 1. H2. At this time, the line peeling end position E2 may be provided on the outer periphery of the support substrate 1 on the side opposite to the line peeling start position E1 via the center (geometric center of gravity) of the support substrate 1. Each of the claws 6A and 6B can be sharpened so that the tip can be inserted between the support substrate 1 and the bonding layer 2. Each of the claws 6A and 6B may be shovel-shaped or wedge-shaped. Further, the claws 6A and 6B may be provided individually corresponding to the line peeling end position E2 and the line peeling start position E1, respectively, and one claw may be shared at the line peeling end position E2 and the line peeling start position E1. At this time, it can be comprised so that a claw can be moved to the position of the thread peeling end position E2, and the thread peeling start position E1. Next, as shown in FIG. 3 (c), the support substrate 1 is separated from the semiconductor wafer W by moving the separation line LH in the separation direction DH. The peeling direction DH can be set from the wire peeling start position E1 to the wire peeling end position E2. At this time, in order to move the peeling line LH in the peeling direction DH, the supporting substrate 1 may be adsorbed on the line peeling start position E1 side than the peeling line LH, and the supporting substrate 1 may be positioned closer to the wire peeling end position E2 side than the peeling line LH. 1 Pressurize. Then, by moving the peeling line LH in the peeling direction DH until reaching the peeling surface H1, the support substrate 1 can be peeled from the semiconductor wafer W. The peeling line LH may be provided in a straight line at the boundary between the adhesion surface and the peeling surface of the support substrate 1 and the semiconductor wafer W. The line peeling means that the support substrate 1 is peeled from the semiconductor wafer W by moving the peeling line LH in the peeling direction DH. Here, if the wire peeling advances, the contact surface between the support substrate 1 and the semiconductor wafer W becomes smaller. At this time, if the peeling surface H1 does not exist at the line peeling end position E2, it is difficult to ensure the area of the close contact surface that resists the rigidity of the support substrate 1 as much as possible. Therefore, in the final stage of peeling, it is possible that the rigidity of the supporting substrate 1 cannot be overcome and the remaining close contact surfaces are suddenly peeled off (surface peeling), which may damage the device layer DV. In contrast, by forming the peeling surface H1 at the linear peeling end position E2 before the start of the linear peeling, it is possible to reach the peeling surface H1 while maintaining the linear peeling. Therefore, it is possible to prevent the close contact surface remaining in the final stage of the peeling from peeling off at once, and to reduce the load applied to the device layer DV. (Second Embodiment) Figs. 4 (a) to 4 (c) are plan views showing a method for manufacturing a semiconductor device according to a second embodiment. At the peeling start position E1 on the line in FIG. 4 (a), a peeling surface H1 is provided on the support substrate 1 by inserting the front end of the claw 6A between the support substrate 1 and the adhesive layer 2. Next, as shown in FIG. 4 (b), in a state where the front end of the claw 6A is inserted between the support substrate 1 and the bonding layer 2, the claw 6A is rotated along the outer periphery of the support substrate 1 for one cycle, thereby spreading A peeling surface H3 is provided on the entire periphery of the support substrate 1. Then, as shown in FIG. 4 (c), the support substrate 1 is separated from the semiconductor wafer W by moving the separation line LH in the separation direction DH. The peeling direction DH can be set from the wire peeling start position E1 to the wire peeling end position E2. Here, by setting the peeling surface H3 over the entire periphery of the support substrate 1 and performing line peeling, the length of the peeling line LH can be shortened, the rigidity of the support substrate 1 when the peeling line is reduced, and the final stage of peeling can be prevented. The remaining tight contact surfaces are peeled off at once, thereby reducing the load applied to the device layer DV. A number of embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments and variations are included in the scope or gist of the invention, and are included in the invention described in the scope of patent application and its equivalent scope. [Related Applications] This application claims the priority of Japanese Patent Application No. 2016-46605 (application date: March 10, 2016). The entire contents of the case are incorporated herein by reference.

1‧‧‧ support substrate

2‧‧‧ Adjacent layer

3‧‧‧ support belt

4‧‧‧circle

5th floor

6A, 6B‧‧‧Jaw

DH

DV‧‧‧device layer

E1‧‧‧line stripping start position

E2‧‧‧ line stripping end position

H1‧‧‧ peeling surface

H2‧‧‧ peeling surface

H3‧‧‧ peeling surface

LH‧‧‧ Stripping Line

W‧‧‧Semiconductor wafer

1 (a) to 1 (d) are sectional views showing a method for manufacturing a semiconductor device according to the first embodiment. 2 (a) to 2 (b) are cross-sectional views showing a method for manufacturing a semiconductor device according to the first embodiment. 3 (a) to 3 (c) are plan views showing a method for manufacturing a semiconductor device according to the first embodiment. 4 (a) to 4 (c) are plan views showing a method for manufacturing a semiconductor device according to a second embodiment.

Claims (5)

A method for manufacturing a semiconductor device, in which a wafer having a semiconductor element formed on the surface thereof is directed to a support substrate side, and a first peeling surface is formed on at least a part of an outer periphery of the support substrate; and The second peeling surface is formed on the outer periphery of the supporting substrate on the opposite side across the geometric center of gravity of the supporting substrate, and the wafer and the supporting substrate are aligned from the second peeling surface toward the first peeling surface. Peel off. The method for manufacturing a semiconductor device according to claim 1, wherein the first peeling surface is formed at a line peeling end position. The method for manufacturing a semiconductor device according to claim 1, wherein the first and second peeling surfaces are formed by inserting a claw between the support substrate and the wafer. A method for manufacturing a semiconductor device is to insert a claw between the support substrate and the wafer by placing a claw between the support substrate and the wafer on a wafer having a semiconductor element Forming a peeling surface; and rotating the support substrate relative to the claw, expanding the peeling surface to the entire circumference of the support substrate, and extending from a part of the peeling surface to the entire periphery, facing away from the part from the above point The peeling surface facing the geometric center of gravity of the supporting substrate is in a direction of another part on the opposite side, and the wafer is peeled from the supporting substrate. The method for manufacturing a semiconductor device according to any one of claims 1 or 4, wherein the support substrate is adsorbed on a line peeling start position side where the wafer is peeled from the support substrate, and the support substrate is pressurized on a line peel end position side .