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TWI533351B - 高效能非極性第三族氮化物光學裝置之金屬有機化學氣相沈積生長 - Google Patents

高效能非極性第三族氮化物光學裝置之金屬有機化學氣相沈積生長 Download PDF

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TWI533351B
TWI533351B TW096147275A TW96147275A TWI533351B TW I533351 B TWI533351 B TW I533351B TW 096147275 A TW096147275 A TW 096147275A TW 96147275 A TW96147275 A TW 96147275A TW I533351 B TWI533351 B TW I533351B
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iii nitride
polar
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thickness
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史密特 馬修Ｃ
金光中
佐藤均
丹巴爾斯 史帝芬Ｐ
史貝克 詹姆士Ｓ
秀治 中村
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美國加利福尼亞大學董事會
獨立行政法人科學技術振興機構
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Description

高效能非極性第三族氮化物光學裝置之金屬有機化學氣相沈積生長
本發明係關於半導體裝置在非極性第三族氮化物薄膜上之生長，更特定而言係關於LED(發光二極體)、LD(雷射二極體)、VCSEL(垂直空腔表面發射雷射器)、RCLED(諧振腔LED)及MCLED(微空腔LED)。
(注意：本申請案參考如本說明書通篇中所示之多個不同公開案，該等公開案係如括號內之引文所示，亦即[REFx]，其中x為數字。由數字x所識別之該等不同公開案之清單可見於下文標題為"參考案"之部分中。該等公開案中之每一者均以引用之方式併入本文)。
諸如氮化鎵(GaN)LED之習知第三族氮化物光學裝置在纖鋅礦單位晶胞之c方向上生長。由於在薄膜生長方向上之自發及壓電偏振之貢獻而發生淨偏振。所得內建電場引起頻帶結構傾斜，在量子井中最為顯著。其對c平面GaN光學裝置之行為具有巨大影響。傾斜量子井因此減小電洞及電子波函數之空間重疊，轉而降低輻射復合效率。另外，如藉由量子侷限史塔克效應(QCSE)[REF 1]所解釋，發射波長降低(藍移)，同時增加驅動電流。
M平面及a平面GaN被定義為非極性GaN，因為不存在與彼等個別平面正交之淨偏振場。因此，頻帶結構不如c平面一樣傾斜，其意謂該等平面上之量子井結構具有平坦頻帶。輻射效率理論上更高，且無波長位移發生。近期已報 導非極性LED[REF2,3]。然而，輸出功率及效率完全在c平面LED之輸出功率及效率以下。此不良效能之主要原因通常歸因於高位錯密度。
當前非極性GaN光學裝置還未達到使其銷售所必需之效能標準。所報導之最高功率m平面LED在20 mA下為1.79 mW[REF 3]，且尚無在m平面GaN上生長之電泵式LD之報導。在m平面GaN上生長之光學裝置具有發射偏光之益處[REF 4]。此使其良好適於用於顯示器、尤其LCD(液晶顯示器)之背光應用，因為將不需要光偏光器。
因此，此項技術中存在對製造高效能非極性第三族氮化物光學裝置之改良方法之需要。本發明滿足該需要。
本發明描述為獲得高效能非極性第三族氮化物光電子裝置且更特定而言非極性GaN LED及LD所必需之材料及生長條件。本發明包括若干關鍵概念，當一起利用時，其產生特殊裝置效能。
裝置在低缺陷密度基板上生長。該基板可為藉由氫化物氣相磊晶法(HVPE)生長之塊體m平面GaN基板或藉由MOCVD或HVPE生長之m平面側壁橫向磊晶過度生長(SLEO)模板。重要的為自作用區域消除缺陷及疊差以降低非輻射復合中心之數量且改良載流子傳輸性質。
作用區域之多量子井(MQW)結構中之量子井在大約845℃至890℃之範圍內變化之溫度下生長至大約8至12奈米(nm)厚度，其比典型c平面LED(約2.5 nm)大得多。MQW 結構中之量子障壁在大約915℃至940℃之範圍內變化之溫度下生長至大約10至18奈米厚度。
p型GaN係在相對低的溫度下，即量子障壁生長溫度下生長。
透明導電氧化物電極沈積於用以增強光提取之裝置上。該等氧化物包括(但不限於)氧化銦錫(ITO)及氧化鋅(ZnO)以及在所關注之波長下為透明之其他氧化物及材料。
在較佳實施例之以下描述中，對隨附圖式進行參考，該等隨附圖式形成本文之一部分且在該等隨附圖式中以說明方式展示其中可實施本發明之特定實施例。應瞭解，可利用其他實施例且可在不脫離本發明之範疇之情況下進行結構改變。
概述
本發明描述如何使當前技術水平之m平面GaN光學裝置生長。本文中所述之技術已用以達成改良之m平面GaN LED效能。該等m平面GaN LED具有與當前存在之最佳品質c平面GaN LED相當之輸出功率。該等結果表示光電子裝置中之主要突破。
技術描述
本發明之高效能m平面GaN LED生長於超低缺陷密度基板或模板上。該等基板或模板可為(但不限於)塊體m平面GaN基板或m平面SLEO模板。SLEO模板可生長於包括(但不限於)m－SiC、LiAI Ox 及尖晶石之許多基板上。此外，在 適當錯切基板上之生長可改良表面形態穩定性。在塊體GaN基板上獲得當前結果，且以下描述特定針對該狀況而言。
圖1為根據本發明之較佳實施例之生長原樣m平面GaN LED 10的圖解。m平面GaN LED 10包括低缺陷基板或模板12、具有大約10微米厚度之為緩衝層之n型GaN(n-GaN)層14、包括用於高輸出功率效能之具有厚量子井之多量子井(MQW)結構的作用區域16、具有大約10微米厚度之AlGaN電子阻斷層18及具有大約160nm厚度之3級或3部分p型GaN(p-GaN)層20，其中底部部分22在大約890℃下生長，其具有高Mg摻雜及大約40nm之厚度；中心部分24在大約955℃下生長，其具有輕微Mg摻雜及大約90nm之厚度；且頂部部分26在大約955℃下生長，其具有高Mg摻雜及大約30nm之厚度。
該LED裝置10在MOCVD反應器中於小塊塊體GaN上"再生長"，其中m軸垂直於生長方向。必需使另外稱為厚GaN緩衝層之極厚之初始GaN層14生長，以與所使用之特定塊體GaN基板達成聚結且獲得裝置品質表面。大約8至15微米之生長對實現該目的而言通常為必要的。薄膜聚結亦可藉由使用適當表面處理來達成。該初始GaN層14經Si摻雜以獲得n摻雜型裝置層14。然而，在切換至n摻雜型生長之前，對於任意厚度而言該層14亦可經無意地摻雜(UID)。
在n摻雜型GaN層14之後生長作用區域16。作用區域16中之MQW結構包含80Å井及180Å障壁之6x堆疊，然而亦可 使用更多或更少之井及障壁。量子井係由InGaN製得，其可視所要之發射波長而具有廣泛範圍之In分率。量子障壁係由GaN製得，但亦可生長為具有比量子井少之In分率之InGaN層。
對最佳裝置效能而言，量子井為大約8至12nm厚，而量子障壁為大約10至18nm厚。在不脫離本發明之範疇之情況下，可使用量子井之其他厚度以及量子障壁之其他厚度。舉例而言且並非以限制方式，量子障壁可為更薄的，諸如大約10nm之量子障壁厚度，其可最佳化裝置之效能。
作用區域16在通常(但不限於)在845℃至890℃之範圍內變化之溫度下生長。對量子井及障壁生長而言，保持TEG、NH3及N2流動處於相同值。除非使用利用InGaN量子障壁之作用區域16，否則在量子井生長期間，僅使TMI流動。在後者之狀況下，量子障壁之可藉由降低TMI流動同時保持反應器溫度相同，或保持TMI流動恆定同時增加溫度來控制InGaN組合物。通常，前者用以避免溫度斜線上升時間。另外，該InGaN/InGaN MQW結構常常僅用於雷射二極體中。
由量子井層之In分率對裝置10之發射波長進行控制。藉由使反應器之溫度變化而使In分率受到最好控制。通常，在給定TMI流動下，在較低溫度下之生長將產生比在較高溫度下生長要高之In分率。
通常，對量子井及障壁層而言，m平面LED在恆溫下生 長。然而，亦可利用"2溫度"作用區域16。在該作用區域16中，量子障壁在高於量子井之溫度下生長。
舉例而言，量子井在大約845℃至890℃之範圍內變化之溫度下生長至大約8至12奈米厚度。2至5nm之薄GaN蓋在量子井生長後立即生長。該蓋係在量子井生長溫度下生長，且本質上為量子障壁之第一部分。一旦該蓋生長，反應器就斜線上升至大約915℃至940℃之範圍內之溫度，此時量子障壁之其餘部分生長至大約10至18奈米厚度。溫度斜線下降返回至量子井生長溫度且重複該過程直至已生長所要數量之量子井及量子障壁。
在MQW結構16之最後量子障壁後生長AlGaN阻斷層18。該層18之Al組成可在大約12%至20%之間。AlGaN阻斷層18在量子障壁生長溫度下或至少在類似於作用區域16生長溫度之溫度下予以生長。
在AlGaN阻斷層18後生長低溫Mg摻雜p型GaN層20。該層20之細節描述於美國實用專利申請案第11/840,057號及美國臨時專利申請案第60/822,600號中，其交互引用於上文且以引用之方式併入本文。通常，該層20在相對低之溫度(即量子障壁生長溫度，例如大約超過量子井生長溫度150℃以內)下予以生長，且如上所述具有160nm之厚度，但可如裝置設計所需，以其他溫度及其他厚度予以生長。另外，在不脫離本發明之範疇之情況下，可使用其他技術來生長層20。
圖2為包括p觸點28及n觸點30之LED 10之圖解。在本實 施例中，p觸點28及n觸點30均可包含ITO層。ITO層之厚度為250 nm且經由電子束(e－beam)予以沈積。ITO層範圍之大約厚度可為150 nm至300 nm。ITO沈積亦可使用諸如濺鍍或化學氣相沈積(CVD)之其他技術來執行。使ITO層在600℃下在N2 /O2 中退火大約5分鐘以使ITO層透明。在600℃下在N2 中執行後續退火10分鐘以改良ITO層之薄層電導。
所得ITO層對所發射之光而言幾乎為透明的。因此，比用習知方法加工之LED更多之光自裝置10的頂部逸出。當然，封裝方法決定何種光將被提取。該ITO層連同下文討論之ZnO之存在僅僅降低發生在裝置10內部之吸收之量。
圖3亦為包括p觸點32及n觸點34之LED之圖解。然而在本實施例中，p觸點32及n觸點34均可包含ZnO層。ZnO層可經由MOCVD、濺鍍、電子束或任何其他CVD技術予以沈積。此外，ZnO層可為未摻雜的或經(但不限於)Al或Ga摻雜。
如同ITO層一樣，ZnO層對所發射之光而言為極透明的。因此，比用習知方法加工之LED更多之光自裝置10的頂部逸出。
實驗結果
圖4為根據本發明之較佳實施例之m平面LED的輸出功率及外部量子效率(EQE)的圖表。如所表明，在20 mA下之功率為25.4 mW，發射波長處於403 nm，且外部量子效率在20 mA下為41.4%。EQE曲線之性質不同於c平面GaN LED中所觀察到的彼性質。注意，EQE在20 mA下繼續上升。
圖5為輸出功率對量子井厚度之圖表，其展示厚井(8－12 nm)對m平面LED而言為最佳的。該圖式展示輸出功率對量子井厚度之依賴性。峰值輸出功率位於8 nm與16 nm井寬度之間的某處。另一方面，典型c平面LED通常在約2.5 nm井寬度下具有峰值輸出功率。
方法步驟
圖6為說明根據本發明之較佳實施例執行之方法步驟的流程圖。
方塊36表示n型GaN層生長於非極性第三族氮化物基板或模板上。
方塊38表示包括量子井結構之作用區域生長於n－GaN層上。
方塊40表示AlGaN電子阻斷層生長於作用區域上。
方塊42表示p型GaN層生長於AlGaN電子阻斷層之頂部。
方塊44表示電極沈積於裝置上。
可能之修改及變化
本發明之可能修改及變化包括可藉由採用三(3)色作用區域來實現偏振紅－綠－藍(RGB)光源。該作用區域具有至少3個將發射紅色、綠色及藍色之明顯頻帶邊緣。明顯頻帶邊緣可藉由操縱氣體流及溫度以控制量子井中之(Al,In,Ga)N組合物來產生。
另外，作用區域可為(Ga,Al,In,B)N之任何組合物。舉例 而言，可生長AlGaN/GaN或AlGaN/AlGaN作用區域以產生在紫外(UV)頻譜中發射之裝置。
最後，先前所述之方法亦可應用於GaN之a平面及任何半極性平面。
優點及改良
本文中所述之方法說明如何在m平面GaN上獲得高輸出光學裝置。已藉由使用先前所述之MOCVD生長方法及ITO電極來獲得極高輸出功率及高效率。在超低缺陷密度基板上之裝置生長降低非輻射復合中心之數量，其改良裝置之輸出功率效率。進一步藉由使用比典型c平面GaN量子井更厚之量子井來增加輸出功率。此外，藉由使用透明氧化物電極(ITO)來增強光提取。最終結果為具有世界紀錄效能之m平面GaN LED。
本文中之磊晶創新亦可應用於雷射二極體於m平面GaN基板或模板上之生長。透明導電氧化物可用於製造m平面GaN雷射二極體。另外，本文中所述之方法亦可應用於GaN之a平面及任何半極性平面。在該等狀況下，低缺陷基板或模板必須具有個別平面定向。
參考案
以下參考案以引用之方式併入本文：1.Jpn.J.Appl.Phys.第36卷(1997),L382－L385。
2.Jpn.J.Appl.Phys.第44卷(2005),L173－L175。
3.Jpn.J.Appl.Phys.第45卷(2006),L1197－L1199。
4.Jpn.J.Appl.Phys.第43卷(2005),L1329－L1332。
結論
本文中所述之方法能使高功率光學裝置在m平面GaN上實現。用該等技術製造之於m平面GaN上之LED在20 mA下具有與當前c平面LED相當之輸出功率。該方法第一次使m平面光學裝置與市場相關。具有該高輸出功率之m平面LED可用作液晶顯示器(LCD)及其中需要光偏振之其他該等應用中之偏光源。可設想，隨著進一步之裝置最佳化，m平面LED將最終在輸出功率及效率上勝過c平面LED。對在m平面GaN上之雷射二極體而言可同樣如此。
另外，本發明之方法亦可有益於其他電子、光電子或光學裝置，諸如太陽電池、垂直空腔表面發射雷射器(VCSEL)、諧振腔發光二極體(RCLED)、微空腔發光二極體(MCLED)、高電子遷移率電晶體(HEMT)、電晶體、二極體及駐留於類似基板上或需要類似半導體材料或加工步驟之其他電子裝置。
儘管本文中關於橫向裝置進行描述，但是本發明允許製造塊體基板，其亦將允許製造於許多基板材料上之垂直裝置，例如成品裝置之n觸點可在根據本發明製造之裝置之導電基板的底部上。本發明不限於垂直裝置，而是僅呈現垂直裝置以用於說明且不意欲限制本發明。
儘管本發明描述m平面GaN，但是其他纖鋅礦結晶結構以及其他第三族氮化物材料亦可在本發明之範疇內使用。另外，纖鋅礦結構內之其他平面以及第三族氮化物及其他材料之半極性及非極性結構亦可在本發明之範疇內使用。 儘管關於LED進行描述，但是本發明之m平面生長技術亦可適用於其他裝置，諸如雷射二極體及其他裝置。
在此對本發明之較佳實施例之描述進行總結。已呈現本發明之一或多個實施例之上述描述以用於說明及描述目的。其並不意欲為徹底的或將本發明限制於所揭示之精確形式。根據上述教示，許多修改及變化為可能的。
10‧‧‧m平面GaN LED
12‧‧‧低缺陷基板或模板
14‧‧‧n型GaN層
16‧‧‧作用區域
18‧‧‧AlGaN電子阻斷層
20‧‧‧p型GaN層
22‧‧‧底部部分
24‧‧‧中心部分
26‧‧‧頂部部分
28、32‧‧‧p觸點
30、34‧‧‧n觸點
圖1為利用厚GaN緩衝層、厚量子井層及三步p－GaN生長之生長原樣(as－grown)m平面GaN LED之圖解。
圖2為使用退火ITO p觸點之經加工m平面LED之圖解。
圖3為使用ZnO作為p觸點之經加工m平面LED之圖解。
圖4為世界紀錄m平面LED之輸出功率及外部量子效率(EQE)之圖表。
圖5為輸出功率對量子井厚度之圖表，其展示厚井(8－12 nm)對m平面LED而言為最佳的。
圖6為說明根據本發明之較佳實施例執行之方法步驟的流程圖。
10‧‧‧m平面GaN LED
12‧‧‧低缺陷基板或模板
14‧‧‧n型GaN層
16‧‧‧作用區域
18‧‧‧AlGaN電子阻斷層
20‧‧‧p型GaN層
22‧‧‧底部部分
24‧‧‧中心部分
26‧‧‧頂部部分

Claims (54)

  1. 一種製造一第三族氮化物光電子裝置之方法，其包含：(a)在一第三族氮化物基板或模板之一非極性或半極性平面上或上方生長一第三族氮化物發光二極體(LED)或雷射二極體(LD)結構，其中：該LED或LD結構包含一或多個p型第三族氮化物層、一n型第三族氮化物層及在該等p型第三族氮化物層與該n型第三族氮化物層之間的一非極性或半極性第三族氮化物作用區域，生長該作用區域包括生長一或多個非極性或半極性第三族氮化物量子井及用於該等量子井之量子井障壁，該等量子井具有一或多個井厚度，且在一或多個井生長溫度下生長，該等量子井障壁具有一或多個障壁厚度，且在一或多個障壁生長溫度下生長，及該等p型第三族氮化物層具有在一或多個溫度下生長之一或多個厚度，且以一或多個p型摻雜劑摻雜；及(b)製造至該LED或LD結構之觸點；其中包括步驟(a)至(b)之該製造製造具有至少35%之一外部量子效率(EQE)之該裝置。
  2. 如請求項1之方法，其中該第三族氮化物基板或模板為藉由一氨熱方法或藉由氫化物氣相磊晶法(HVPE)生長之一塊體第三族氮化物基板或模板。
  3. 如請求項1之方法，其中該第三族氮化物基板或模板為藉由金屬有機化學氣相沈積(MOCVD)或藉由氫化物氣相磊晶法(HVPE)生長之一非極性側壁橫向磊晶過度生長(SLEO)基板或模板。
  4. 如請求項1之方法，其中該等量子井生長至大約8至12奈米厚度。
  5. 如請求項1之方法，其中該等井生長溫度係在大約845℃至890℃之一範圍內。
  6. 如請求項1之方法，其中該一或多個障壁厚度係在大約10至18奈米之一範圍內。
  7. 如請求項1之方法，其中該一或多個障壁生長溫度係在大約915℃至940℃之一範圍內。
  8. 如請求項1之方法，其中該等p型第三族氮化物層在該等障壁生長溫度下生長。
  9. 如請求項1之方法，其中製造該等觸點包括將透明電極沈積於具有一或多個厚度之該裝置上。
  10. 如請求項9之方法，其中該等電極中之一或多者包含氧化銦錫(ITO)。
  11. 如請求項1之方法，其中該作用區域具有至少8奈米之一厚度。
  12. 如請求項1之方法，其中該作用區域具有在大於22.5奈米至198奈米之一範圍內之一厚度。
  13. 如請求項1之方法，其中該井厚度係在大於2.5奈米至12奈米之一範圍內。
  14. 如請求項1之方法，其中該裝置係一LED，及該EQE係在35%至41.4%之一範圍內。
  15. 如請求項1之方法，其中包括步驟(a)至(b)之該製造製造具有至少25毫瓦特(mW)之一輸出功率之該裝置。
  16. 如請求項1之方法，其進一步包含：使用金屬有機化學氣相沈積生長該LED結構，其中：該非極性平面係一氮化鎵(GaN)基板之一m平面，該n型第三族氮化物層包含GaN，該一或多個量子井包含InGaN，且具有在8至12奈米(nm)之一範圍內之該等井厚度，該等量子井障壁包含鎵及氮，且具有在10至18奈米之一範圍內之該等障壁厚度，及該等p型第三族氮化物層包含使用多重溫度級而生長且具有不同厚度之p型GaN層，其中該等溫度超過該一或多個井生長溫度150℃以內；在該量子井障壁上生長一AlGaN電子阻斷層，其中該AlGaN電子阻斷層中之一Al組成係在12%至20%之一範圍內；沈積該等觸點包含至該等p型GaN層中之一或多者之一觸點，及至n型GaN之一觸點，其中該等觸點包含氧化銦錫(ITO)及/或氧化鋅；及退火該等觸點。
  17. 如請求項16之方法，其中該等觸點具有在150至350奈米之一範圍內之一厚度。
  18. 如請求項16之方法，其中該等多重溫度級包括：一第一級，其中一第一p型GaN層在一第一溫度下生長至一第一厚度，且以一第一鎂摻雜程度摻雜；一第二級，其中一第二p型GaN層在高於該第一溫度之一第二溫度下於該第一p型GaN層上生長至較該第一厚度厚之一第二厚度，且以低於該第一鎂摻雜程度之一第二鎂摻雜程度摻雜；及一第三級，其中一第三p型GaN層在高於該第一溫度之一第三溫度下於該第二p型GaN層上生長至較該第二厚度薄之一第三厚度，且以高於該第二鎂摻雜程度之一第三鎂摻雜程度摻雜。
  19. 如請求項1之方法，其進一步包含在該等量子井之生長期間控制該等井生長溫度及/或TMI流動以在該等量子井中獲得一銦組成，其中該裝置在一紫外波長範圍中以一峰值發射來發射。
  20. 如請求項9之方法，其中該等觸點中之一或多者包括氧化鋅。
  21. 如請求項9之方法，其中該等透明電極包括在該n型第三族氮化物層上之一第一透明導電氧化電極，及在該p型第三族氮化物層上之一第二透明導電氧化電極。
  22. 如請求項1之方法，其進一步包含：在該n型第三族氮化物層及該p型第三族氮化物層之每一者上準備及沈積包含一透明導電氧化電極之該等觸點，該等透明導電氧化電極中之每一者具有一厚度、透 明度及電導，其中該光電子裝置發射具有至少35%之一外部量子效率(EQE)的光；及生長具有在大於22.5奈米至198奈米之一範圍內之一厚度之量子井結構，其包含具有在大於2.5奈米至12奈米之一範圍內之一或多個厚度之一或多個量子井。
  23. 如請求項1之方法，其中該等p型第三族氮化物層在超過量子井生長溫度150℃以內之該一或多個溫度下生長。
  24. 如請求項1之方法，其中在該量子井結構中之量子井具有一非極性m平面定向，且在具有很低的包括疊差密度之缺陷密度之非極性m平面氮化鎵基板或模板上生長，以獲得至少35%之EQE及至少5mW之一輸出功率。
  25. 如請求項1之方法，其中該非極性第三族氮化物基板或模板係一氮化鎵基板或模板。
  26. 如請求項1之方法，其中該量子井結構包含發射紅色、綠色及藍色光之一三色作用區域。
  27. 如請求項1之方法，其進一步包含：生長包含具有至少8奈米之一厚度之一或多個量子井之量子井結構，其中該光電子裝置係在20毫安培之一驅動電流下具有至少41%之外部量子效率(EQE)及至少25mW之一輸出功率之一發光二極體(LED)。
  28. 如請求項1之方法，其中該製造係使該裝置可發射具有25mW之一輸出功率之光。
  29. 一種使用如請求項1之方法製造之光電子裝置。
  30. 一種第三族氮化物光電子裝置，其包含： 在一第三族氮化物基板或模板上或上方之一第三族氮化物發光二極體(LED)或雷射二極體(LD)結構，其中：該LED或LD結構包含一非極性或半極性第三族氮化物作用區域，該非極性或半極性第三族氮化物作用區域包括具有一或多個厚度之一或多個非極性或半極性第三族氮化物量子井；及至該LED或LD結構之觸點，其中該裝置具有至少35%之一外部量子效率(EQE)。
  31. 如請求項30之裝置，其中該第三族氮化物基板或模板為藉由氫化物氣相磊晶法(HVPE)或一氨熱方法生長之一塊體第三族氮化物基板或模板。
  32. 如請求項30之裝置，其中該第三族氮化物基板或模板為一藉由金屬有機化學氣相沈積(MOCVD)或氫化物氣相磊晶法(HVPE)生長之非極性側壁橫向磊晶過度生長(SLEO)模板。
  33. 如請求項30之裝置，其中該等量子井中之一或多者生長至大約8至12奈米厚度。
  34. 如請求項30之裝置，其中該等量子井在大約845℃至890℃之範圍內變化之溫度下生長。
  35. 如請求項33之裝置，其中用於該等量子井之量子障壁生長至大約10至18奈米厚度。
  36. 如請求項30之裝置，其中用於該等量子井之量子障壁在大約915℃至940℃之範圍內變化之溫度下生長。
  37. 如請求項30之裝置，其中該LED或LD結構包括在用以生 長用於該等量子井之量子障壁之一生長溫度下生長之一p型第三族氮化物層。
  38. 如請求項30之裝置，其中該等觸點包括沈積於該裝置上之透明導電電極。
  39. 如請求項38之裝置，其中該等觸點包括包含氧化銦錫(ITO)及/或氧化鋅(ZnO)之透明電極。
  40. 如請求項30之裝置，其中該第三族氮化物基板或模板係具有很低的包括疊差密度之一缺陷密度之一塊體第三族氮化物基板或模板，以獲得至少35%之外部量子效率(EQE)及至少5毫瓦特(mW)之一輸出功率。
  41. 如請求項30之裝置，其中該裝置係一LED、該EQE係在35%至41.4%之一範圍內且該裝置具有至少5毫瓦特之一輸出功率。
  42. 如請求項30之裝置，其中量子井結構中之一或多個量子井具有至少8奈米之一厚度。
  43. 如請求項30之裝置，其中：該LED或LD結構包括在一n型第三族氮化物層與一p型第三族氮化物層之間的該作用區域，該等觸點包括沈積在該n型第三族氮化物層上之一透明導電電極，及在該p型第三族氮化物層上之一透明導電氧化電極，及該作用區域具有在大於22.5奈米至198奈米之一範圍內之一厚度，及該一或多個量子井具有在大於2.5奈米至12奈米之一範圍內之一或多個厚度。
  44. 如請求項30之裝置，其中該等量子井包含InGaN量子井，該光電子裝置係在20毫安培之一驅動電流下具有在35%至41%之一範圍內之EQE及至少25mW之輸出功率之一LED。
  45. 如請求項30之裝置，其中：該光電子裝置係一LED，該作用區域包含用於該等量子井之量子井障壁，該等量子井障壁具有一或多個厚度，及該LED結構包括在一n型第三族氮化物層與具有一或多個厚度及摻雜程度之一或多個p型第三族氮化物層之間的該作用區域，使得該LED在20毫安培之一驅動電流下具有至少35%之外部量子效率(EQE)及至少25mW之輸出功率。
  46. 如請求項30之裝置，其中該等非極性量子井係非極性m平面量子井、該基板係塊體氮化鎵及非極性平面係m平面。
  47. 如請求項30之裝置，其中該第三族氮化物基板或模板係一氮化鎵基板或模板。
  48. 如請求項30之裝置，其中該第三族氮化物基板或模板係一非極性側壁橫向磊晶過度生長(SLEO)模板，且包含一發光二極體之該裝置使用包含下列步驟之方法而被製造：(a)在一氮化鎵基板或模板之一m平面上或上方生長一n型第三族氮化物層； (b)在該n型第三族氮化物層上或上方生長該非極性m平面作用區域，其中該等量子井在一或多個量子井溫度下生長，及用於該等量子井之障壁在一或多個量子井障壁溫度下生長；(c)在該作用區域上生長一AlGaN電子阻斷層，其中該AlGaN電子阻斷層中之一鋁(Al)組成係在12%至20%之一範圍內；(d)在該AlGaN電子阻斷層上生長非極性m平面p型GaN層，其中該等非極性p型GaN層在超過該一或多個井生長溫度150℃以內之溫度下以多級生長，包括：一第一級，其中一第一p型GaN層在一第一溫度下生長至一第一厚度，且以一第一鎂摻雜程度摻雜，一第二級，其中一第二p型GaN層在高於該第一溫度之一第二溫度下於該第一p型GaN層上生長至較該第一厚度厚之一第二厚度，且以低於該第一鎂摻雜程度之一第二鎂摻雜程度摻雜，及一第三級，其中一第三p型GaN層在高於該第一溫度之一第三溫度下於該第二p型GaN層上生長至較該第二厚度薄之一第三厚度，且以高於該第二鎂摻雜程度之一第三鎂摻雜程度摻雜；(e)製造至該n型第三族氮化物層及p型第三族氮化物層之該等觸點，其中該等觸點包括氧化鋅之一厚度；及(f)退火該等觸點；及其中(a)至(d)之生長係使用金屬有機化學氣相沈積。
  49. 如請求項30之裝置，其中該作用區域具有一組成，其中光在一紫外波長範圍中具有一峰值強度。
  50. 如請求項30之裝置，其中該作用區域包含發射紅色、綠色及藍色光之一三色作用區域。
  51. 如請求項30之裝置，其中該等觸點中之一或多者包括氧化鋅。
  52. 如請求項30之裝置，其中該裝置發射具有至少20mW之一輸出功率之光。
  53. 一種第三族氮化物光電子裝置結構，其包含：在一第三族氮化物基板或模板上或上方之一第三族氮化物發光二極體(LED)或雷射二極體(LD)結構，其中該LED或LD結構包含一非極性或半極性第三族氮化物作用區域；及至該LED或LD結構之觸點；其中該裝置結構具有至少35%之一外部量子效率(EQE)，且可發射具有25毫瓦特(mW)之一輸出功率之光。
  54. 一種製造一第三族氮化物光電子裝置結構之方法，其包含：在一第三族氮化物基板或模板上或上方生長一第三族氮化物發光二極體(LED)或雷射二極體(LD)結構，其中該LED或LD結構包含一非極性或半極性第三族氮化物作用區域；及製造至該LED或LD結構之觸點； 其中該裝置結構具有至少35%之一外部量子效率(EQE)，且可發射具有25毫瓦特(mW)之一輸出功率之光。
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