TWI531164B - Output buffer - Google Patents
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本發明是有關於一種輸出緩衝器,且特別是有關於一種軌對軌的輸出緩衝器。This invention relates to an output buffer, and more particularly to a rail-to-rail output buffer.
隨著光電與半導體元件之進步,平面顯示器諸如液晶顯示器(liquid crystal display,LCD)在近幾年蓬勃地發展。液晶顯示器因具有多項優點,例如低功率消耗、無輻射與高空間利用率,而逐漸地成為市場的主流。源極驅動器為液晶顯示器中相當重要的元件,其能轉換顯示影像之數位資料信號為類比信號,且輸出此類比信號至顯示面板的每個像素。With the advancement of optoelectronic and semiconductor components, flat panel displays such as liquid crystal displays (LCDs) have flourished in recent years. Liquid crystal displays have gradually become the mainstream of the market due to their many advantages, such as low power consumption, no radiation, and high space utilization. The source driver is a relatively important component in the liquid crystal display, which can convert the digital data signal of the display image into an analog signal, and output such a specific signal to each pixel of the display panel.
一般來說,源極驅動器包含多個驅動通道來傳送類比信號至每一資料線上的像素,且其亦包含多個輸出緩衝器來提升信號傳輸強度,來對顯示面板進行充放電的動作。因此,輸出緩衝器大大的影響整顆源極驅動器,並且隨著可攜式電子產品的功能越來越多的趨勢下,輸出緩衝器勢必然朝向低功率消耗與小面積的規格邁進。In general, the source driver includes a plurality of driving channels for transmitting analog signals to pixels on each data line, and it also includes a plurality of output buffers to enhance the signal transmission intensity to charge and discharge the display panel. Therefore, the output buffer greatly affects the entire source driver, and as the function of portable electronic products increases, the output buffer is bound to move toward low power consumption and small area specifications.
本發明提供一種輸出緩衝器,其可在輸入電壓及輸出電壓不同時,快速響應輸入電壓的改變而調整輸出電壓。The present invention provides an output buffer that can quickly adjust an output voltage in response to a change in an input voltage when the input voltage and the output voltage are different.
本發明提出一種輸出緩衝器,包括第一P型電晶體、第一N型電晶體、第一比較單元及第二比較單元。第一P型電晶體具有第一源極、第一閘極及第一汲極,第一源極接收系統電壓,第一汲極輸出一輸出電壓。第一N型電晶體具有第二汲極、第二閘極及第二源極,第二汲極耦接第一汲極,第二源極接收接地電壓。第一比較單元接收一輸入電壓及輸出電壓,比較輸入電壓及輸出電壓,並依據比較結果輸出高電壓或低電壓至第一閘極,以及對應地調整流入第一比較單元的第一尾電流。第二比較單元,接收輸入電壓及輸出電壓,比較輸入電壓及輸出電壓,並依據比較結果輸出高電壓或低電壓至第二閘極,以及對應地調整第二比較單元流出的第二尾電流。The invention provides an output buffer comprising a first P-type transistor, a first N-type transistor, a first comparison unit and a second comparison unit. The first P-type transistor has a first source, a first gate and a first drain, the first source receives the system voltage, and the first drain outputs an output voltage. The first N-type transistor has a second drain, a second gate and a second source, the second drain is coupled to the first drain, and the second source receives the ground voltage. The first comparing unit receives an input voltage and an output voltage, compares the input voltage and the output voltage, and outputs a high voltage or a low voltage to the first gate according to the comparison result, and correspondingly adjusts the first tail current flowing into the first comparing unit. The second comparing unit receives the input voltage and the output voltage, compares the input voltage and the output voltage, and outputs a high voltage or a low voltage to the second gate according to the comparison result, and correspondingly adjusts the second tail current flowing out of the second comparing unit.
在本發明之一實施例中,當輸入電壓大於輸出電壓時,第一比較單元輸出低電壓至第一閘極,第二比較單元輸出低電壓至第二閘極。當輸入電壓小於輸出電壓,第一比較單元輸出高電壓至第一閘極,第二比較單元輸出高電壓至第二閘極。In an embodiment of the invention, when the input voltage is greater than the output voltage, the first comparison unit outputs a low voltage to the first gate, and the second comparison unit outputs a low voltage to the second gate. When the input voltage is less than the output voltage, the first comparison unit outputs a high voltage to the first gate, and the second comparison unit outputs a high voltage to the second gate.
在本發明之一實施例中,當輸入電壓大於輸出電壓,第一比較單元處於關閉狀態以降低第一比較單元自系統電壓接收的第一尾電流,第二比較單元處於開啟狀態以增加第二比較單元輸出至接地電壓的第二尾電流。當輸入電壓小於輸出電壓,第一比較單元處於開啟狀態以增加第一比較單元自系統電壓接收的第一尾電流,第二比較單元處於關閉狀態以降低第二比較單元輸出至接地電壓的第二尾電流。In an embodiment of the invention, when the input voltage is greater than the output voltage, the first comparison unit is in a closed state to reduce a first tail current received by the first comparison unit from the system voltage, and the second comparison unit is in an on state to increase the second The comparison unit outputs a second tail current to the ground voltage. When the input voltage is less than the output voltage, the first comparison unit is in an on state to increase a first tail current received by the first comparison unit from the system voltage, and the second comparison unit is in an off state to reduce a second comparison unit output to a second ground voltage Tail current.
在本發明之一實施例中,第一比較單元包括第二P型電晶體、P型差動電路及第一電流源。第二P型電晶體具有第三源極、第三閘極及第三汲極,第三源極接收系統電壓以接收第一尾電流。P型差動電路具有第一輸入端、第二輸入端、第一輸出端、第一電源端及第二電源端,第一輸入端接收輸出電壓,第二輸入端接收輸入電壓,第一輸出端耦接第一閘極,第一電源端耦接第三汲極,第二電源端耦接第三閘極。第一電流源耦接於第二電源端與接地電壓之間。In an embodiment of the invention, the first comparison unit includes a second P-type transistor, a P-type differential circuit, and a first current source. The second P-type transistor has a third source, a third gate, and a third drain, and the third source receives the system voltage to receive the first tail current. The P-type differential circuit has a first input end, a second input end, a first output end, a first power supply end and a second power supply end, the first input end receives the output voltage, the second input end receives the input voltage, and the first output The end is coupled to the first gate, the first power terminal is coupled to the third drain, and the second power terminal is coupled to the third gate. The first current source is coupled between the second power terminal and the ground voltage.
在本發明之一實施例中,P型差動電路包括第三P型電晶體及第四P型電晶體。第三P型電晶體具有第四源極、第四閘極及第四汲極,第四源極耦接第一電源端,第四汲極耦接第二電源端,第四閘極耦接第一輸入端。第四P型電晶體具有第五源極、第五閘極及第五汲極,第五源極耦接第一電源端,第五汲極耦接第一輸出端,第五閘極耦接第二輸入端。In an embodiment of the invention, the P-type differential circuit includes a third P-type transistor and a fourth P-type transistor. The third P-type transistor has a fourth source, a fourth gate and a fourth drain, the fourth source is coupled to the first power terminal, the fourth drain is coupled to the second power terminal, and the fourth gate is coupled The first input. The fourth P-type transistor has a fifth source, a fifth gate and a fifth drain, the fifth source is coupled to the first power terminal, the fifth drain is coupled to the first output terminal, and the fifth gate is coupled The second input.
在本發明之一實施例中,第二比較單元包括第二N型電晶體及N型差動電路及第二電流源。第二N型電晶體具有第六汲極、第六閘極及第六源極,第六源極接收接地電壓以輸出第二尾電流。N型差動電路具有第三輸入端、第四輸入端、第二輸出端、第三電源端及第四電源端,第三輸入端接收輸出電壓,第四輸入端接收輸入電壓,第二輸出端耦接第二閘極,第三電源端耦接第六閘極,第四電源端耦接第六汲極。第二電流源耦接於系統電壓與第三電源端之間。In an embodiment of the invention, the second comparison unit includes a second N-type transistor and an N-type differential circuit and a second current source. The second N-type transistor has a sixth drain, a sixth gate, and a sixth source, and the sixth source receives the ground voltage to output a second tail current. The N-type differential circuit has a third input end, a fourth input end, a second output end, a third power supply end and a fourth power supply end, the third input end receives the output voltage, the fourth input end receives the input voltage, and the second output The terminal is coupled to the second gate, the third power terminal is coupled to the sixth gate, and the fourth power terminal is coupled to the sixth drain. The second current source is coupled between the system voltage and the third power terminal.
在本發明之一實施例中,N型差動電路包括第三N型電晶體、第四N型電晶體。第三N型電晶體具有第七汲極、第七閘極及第七源極,第七汲極耦接第三電源端,第七源極耦接第四電源端,第七閘極耦接第三輸入端。第四N型電晶體具有第八汲極、第八閘極及第八源極,第八汲極耦接第二輸出端,第八源極耦接第四電源端,第八閘極耦接第四輸入端。In an embodiment of the invention, the N-type differential circuit includes a third N-type transistor and a fourth N-type transistor. The third N-type transistor has a seventh drain, a seventh gate and a seventh source, the seventh drain is coupled to the third power terminal, the seventh source is coupled to the fourth power terminal, and the seventh gate is coupled The third input. The fourth N-type transistor has an eighth drain, an eighth gate and an eighth source, the eighth drain is coupled to the second output end, the eighth source is coupled to the fourth power terminal, and the eighth gate is coupled The fourth input.
在本發明之一實施例中,輸出緩衝器更包括偏壓單元,耦接第一閘極及第二閘極,用以提供一偏壓。In an embodiment of the invention, the output buffer further includes a biasing unit coupled to the first gate and the second gate for providing a bias voltage.
在本發明之一實施例中,偏壓單元包括第五P型電晶體、第五N型電晶體。第五P型電晶體具有第九源極、第九閘極及第九汲極,第九源極耦接第一閘極,第九汲極耦接第二閘極,第九閘極接收第一參考電壓。第五N型電晶體具有第十汲極、第十閘極及第十源極,第十汲極耦接第一閘極,第十源極耦接第二閘極,第十閘極接收第二參考電壓。In an embodiment of the invention, the biasing unit includes a fifth P-type transistor and a fifth N-type transistor. The fifth P-type transistor has a ninth source, a ninth gate and a ninth drain, the ninth source is coupled to the first gate, the ninth drain is coupled to the second gate, and the ninth gate is received A reference voltage. The fifth N-type transistor has a tenth drain, a tenth gate and a tenth source, the tenth drain is coupled to the first gate, the tenth source is coupled to the second gate, and the tenth gate receives the first Two reference voltages.
在本發明之一實施例中,上述高電壓為系統電壓。In an embodiment of the invention, the high voltage is a system voltage.
在本發明之一實施例中,上述低電壓為接地電壓。In an embodiment of the invention, the low voltage is a ground voltage.
基於上述,本發明實施例的輸出緩衝器,其第一比較單元及第二比較單元比較輸入電壓及輸出電壓,並據此控制P型電晶體及N型電晶體為導通或截止,以及同步調整第一比較單元及第二比較單元的第一尾電流及第二尾電流,藉此達到對輸入電壓及輸出電壓的壓差快速暫態響應的能力。Based on the above, in the output buffer of the embodiment of the present invention, the first comparison unit and the second comparison unit compare the input voltage and the output voltage, and accordingly control the P-type transistor and the N-type transistor to be turned on or off, and synchronously adjust. The first tail current and the second tail current of the first comparison unit and the second comparison unit, thereby achieving the ability to quickly respond to the voltage difference of the input voltage and the output voltage.
為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
以下的敘述將伴隨著實施例的圖示,來詳細對本發明所提出之實施例進行說明。在各圖示中所使用相同或相似的參考標號,是用來敘述相同或相似的部份。The embodiments described below will be described in detail with reference to the drawings of the embodiments. The same or similar reference numerals are used in the drawings to describe the same or similar parts.
圖1為依據本發明一實施例的輸出緩衝器的系統示意圖。請參照圖1,在本實施例中,輸出緩衝器100包括第一P型電晶體PM1、第一N型電晶體NM1、第一比較單元110、第二比較單元120及偏壓單元130。第一P型電晶體PM1、第一N型電晶體NM1可視為輸出緩衝器100的輸出級。第一P型電晶體PM1,具有第一源極S1、第一閘極G1及第一汲極D1。第一源極S1接收系統電壓VDDA,第一汲極D1輸出一輸出電壓Vout。第一N型電晶體NM1具有第二汲極D2、第二閘極G2及第二源極S2。第二汲極D2耦接第一汲極D1,第二源極S2接收接地電壓GND。1 is a system diagram of an output buffer in accordance with an embodiment of the present invention. Referring to FIG. 1 , in the embodiment, the output buffer 100 includes a first P-type transistor PM1 , a first N-type transistor NM1 , a first comparison unit 110 , a second comparison unit 120 , and a bias unit 130 . The first P-type transistor PM1 and the first N-type transistor NM1 can be regarded as an output stage of the output buffer 100. The first P-type transistor PM1 has a first source S1, a first gate G1, and a first drain D1. The first source S1 receives the system voltage VDDA, and the first drain D1 outputs an output voltage Vout. The first N-type transistor NM1 has a second drain D2, a second gate G2, and a second source S2. The second drain D2 is coupled to the first drain D1, and the second source S2 receives the ground voltage GND.
偏壓單元130耦接第一閘極G1及第二閘極G2,用以提供偏壓VGG至第一閘極G1及第二閘極G2。第一比較單元110接收輸入電壓Vin及輸出電壓Vout,依據比較輸入電壓Vin及輸出電壓Vout,並依據比較結果輸出高電壓VH或低電壓VL至第一閘極G1,以及對應地調整自系統電壓VDDA流入第一比較單元110的第一尾電流it1。第二比較單元120接收輸入電壓Vin及輸出電壓Vout,依據比較輸入電壓Vin及輸出電壓Vout,並依據比較結果輸出高電壓VH或低電壓VL至第二閘極G2,以及調整第二比較單元120流出至接地電壓GND的第二尾電流it2。The biasing unit 130 is coupled to the first gate G1 and the second gate G2 for providing a bias voltage VGG to the first gate G1 and the second gate G2. The first comparison unit 110 receives the input voltage Vin and the output voltage Vout according to the comparison input voltage Vin and the output voltage Vout, and outputs a high voltage VH or a low voltage VL to the first gate G1 according to the comparison result, and correspondingly adjusts the self-system voltage. VDDA flows into the first tail current i t1 of the first comparison unit 110. The second comparison unit 120 receives the input voltage Vin and the output voltage Vout according to the comparison input voltage Vin and the output voltage Vout, and outputs a high voltage VH or a low voltage VL to the second gate G2 according to the comparison result, and adjusts the second comparison unit 120. The second tail current i t2 flowing out to the ground voltage GND.
當輸入電壓Vin大於輸出電壓Vout時,第一比較單元110輸出低電壓VL至第一閘極G1以導通第一P型電晶體PM1,藉由系統電壓VDDA對輸出端(即對應輸出電壓Vout的端點)充電,並且第二比較單元輸出低電壓VL至第二閘極以截止第一N型電晶體NM1,藉此避免輸出端透過第一N型電晶體NM1進行放電。此時,第一比較單元110會處於關閉狀態以降低第一比較單元110自系統電壓VDDA接收的第一尾電流it1,並且第二比較單元處於開啟狀態以增加第二比較單元120輸出至接地電壓GND的第二尾電流it2。When the input voltage Vin is greater than the output voltage Vout, the first comparison unit 110 outputs the low voltage VL to the first gate G1 to turn on the first P-type transistor PM1, by the system voltage VDDA to the output terminal (ie, corresponding to the output voltage Vout) The terminal is charged, and the second comparison unit outputs a low voltage VL to the second gate to turn off the first N-type transistor NM1, thereby preventing the output from being discharged through the first N-type transistor NM1. At this time, the first comparison unit 110 is in a off state to reduce the first tail current i t1 received by the first comparison unit 110 from the system voltage VDDA, and the second comparison unit is in an on state to increase the output of the second comparison unit 120 to the ground. The second tail current i t2 of the voltage GND.
當輸入電壓Vin小於輸出電壓Vout時,第一比較單元110輸出高電壓VH至第一閘極G1以截止第一P型電晶體PM1,藉以避免輸出端透過第一P型電晶體PM1進行充電,並且第二比較單元120輸出高電壓VH至第二閘極G2以導通第一N型電晶體NM1,藉由接地電壓GND對輸出端放電。此時,第一比較單元110會處於開啟狀態以增加第一比較單元110自系統電壓VDDA接收的第一尾電流it1,並且第二比較單元處於關閉狀態以降低第二比較單元120輸出至接地電壓GND的第二尾電流it2。When the input voltage Vin is smaller than the output voltage Vout, the first comparison unit 110 outputs the high voltage VH to the first gate G1 to turn off the first P-type transistor PM1, so as to prevent the output terminal from being charged through the first P-type transistor PM1. And the second comparison unit 120 outputs the high voltage VH to the second gate G2 to turn on the first N-type transistor NM1, and discharges the output terminal by the ground voltage GND. At this time, the first comparison unit 110 is in an on state to increase the first tail current i t1 received by the first comparison unit 110 from the system voltage VDDA, and the second comparison unit is in the off state to lower the output of the second comparison unit 120 to the ground. The second tail current i t2 of the voltage GND.
依據上述,當輸入電壓Vin的電壓範圍為系統電壓VDDA至接地電壓GND時,則輸出電壓Vout電壓範圍同樣為系統電壓VDDA至接地電壓GND。因此,本發明實施例中,輸出緩衝器100可以為軌對軌輸出緩衝器。此外,由於第一比較單元110會依據輸入電壓Vin及輸出電壓Vout的比較結果調整自系統電壓VDDA流入第一比較單元110的第一尾電流it1,並且第二比較單元120會依據比較輸入電壓Vin及輸出電壓Vout的比較結果調整第二比較單元120流出至接地電壓GND的第二尾電流it2,因此輸出緩衝器100可加快對輸入電壓Vin及輸出電壓Vout的壓差的反應,亦即可降低輸出電壓Vout的暫態時間。According to the above, when the voltage range of the input voltage Vin is the system voltage VDDA to the ground voltage GND, the output voltage Vout voltage range is also the system voltage VDDA to the ground voltage GND. Therefore, in the embodiment of the present invention, the output buffer 100 may be a rail-to-rail output buffer. In addition, the first comparison unit 110 adjusts the first tail current i t1 flowing from the system voltage VDDA to the first comparison unit 110 according to the comparison result of the input voltage Vin and the output voltage Vout, and the second comparison unit 120 compares the input voltage according to the comparison. The comparison result of Vin and the output voltage Vout adjusts the second tail current i t2 of the second comparison unit 120 flowing to the ground voltage GND, so that the output buffer 100 can accelerate the reaction of the voltage difference between the input voltage Vin and the output voltage Vout, that is, The transient time of the output voltage Vout can be reduced.
圖2為依據本發明一實施例的輸出緩衝器的電路示意圖。請參照圖1及圖2,在本實施例中,輸出緩衝器100’中的第一比較單元110’包括第二P型電晶體PM2、P型差動電路111、第一電流源CS1。第二P型電晶體PM2具有第三源極S3、第三閘極G3及第三汲極D3。第三源極S3接收系統電壓VDDA以接收第一尾電流it1。P型差動電路111具有第一輸入端IP1、第二輸入端IP2、第一輸出端OP1、第一電源端PT1及第二電源端PT2。第一輸入端IP1接收輸出電壓Vout,第二輸入端IP2接收輸入電壓Vin,第一輸出端OP1耦接第一閘極G1,第一電源端PT1耦接第三汲極D3,第二電源端PT2耦接第三閘極G3。第一電流源CS1耦接於第二電源端PT2與接地電壓GND之間。2 is a circuit diagram of an output buffer in accordance with an embodiment of the present invention. Referring to FIG. 1 and FIG. 2, in the present embodiment, the first comparison unit 110' in the output buffer 100' includes a second P-type transistor PM2, a P-type differential circuit 111, and a first current source CS1. The second P-type transistor PM2 has a third source S3, a third gate G3, and a third drain D3. The third source S3 receives the system voltage VDDA to receive the first tail current i t1 . The P-type differential circuit 111 has a first input terminal IP1, a second input terminal IP2, a first output terminal OP1, a first power terminal PT1, and a second power terminal PT2. The first input terminal IP1 receives the output voltage Vout, the second input terminal IP2 receives the input voltage Vin, the first output terminal OP1 is coupled to the first gate G1, the first power terminal PT1 is coupled to the third drain D3, and the second power terminal The PT2 is coupled to the third gate G3. The first current source CS1 is coupled between the second power terminal PT2 and the ground voltage GND.
進一步來說,P型差動電路111包括第三P型電晶體PM3及第四P型電晶體PM4。第三P型電晶體PM3具有第四源極S4、第四閘極G4及第四汲極D4。第四源極S4耦接第一電源端PT1,第四汲極D4耦接第二電源端PT2,第四閘極G4耦接第一輸入端IP1。第四P型電晶體PM4具有第五源極S5、第五閘極G5及第五汲極D5。第五源極S5耦接第一電源端PT1,第五汲極D5耦接第一輸出端OP1,第五閘極G5耦接第二輸入端IP2。Further, the P-type differential circuit 111 includes a third P-type transistor PM3 and a fourth P-type transistor PM4. The third P-type transistor PM3 has a fourth source S4, a fourth gate G4, and a fourth drain D4. The fourth source S4 is coupled to the first power terminal PT1, the fourth gate D4 is coupled to the second power terminal PT2, and the fourth gate G4 is coupled to the first input terminal IP1. The fourth P-type transistor PM4 has a fifth source S5, a fifth gate G5, and a fifth drain D5. The fifth source S5 is coupled to the first power terminal PT1, the fifth gate D5 is coupled to the first output terminal OP1, and the fifth gate G5 is coupled to the second input terminal IP2.
在本實例中,輸出緩衝器100’中的第二比較單元120’包括第二N型電晶體NM2、N型差動電路121及第二電流源CS2。第二N型電晶體NM2具有第六汲極D6、第六閘極G6及第六源極S6。第六源極S6接收接地電壓GND以輸出第二尾電流it2。N型差動電路121具有第三輸入端IP3、第四輸入端IP4、第二輸出端OP2、第三電源端PT3及第四電源端PT4。第三輸入端IP3接收輸出電壓Vout,第四輸入端IP4接收輸入電壓Vin,第二輸出端OP2耦接第二閘極G2,第三電源端PT3耦接第六閘極G6,第四電源端PT4耦接第六汲極D6。第二電流源CS2耦接於系統電壓VDDA與第三電源端PT3之間。In the present example, the second comparison unit 120' in the output buffer 100' includes a second N-type transistor NM2, an N-type differential circuit 121, and a second current source CS2. The second N-type transistor NM2 has a sixth drain D6, a sixth gate G6, and a sixth source S6. The sixth source S6 receives the ground voltage GND to output a second tail current i t2 . The N-type differential circuit 121 has a third input terminal IP3, a fourth input terminal IP4, a second output terminal OP2, a third power terminal PT3, and a fourth power terminal PT4. The third input terminal IP3 receives the output voltage Vout, the fourth input terminal IP4 receives the input voltage Vin, the second output terminal OP2 is coupled to the second gate G2, and the third power terminal PT3 is coupled to the sixth gate G6, and the fourth power terminal The PT4 is coupled to the sixth drain D6. The second current source CS2 is coupled between the system voltage VDDA and the third power terminal PT3.
進一步來說,N型差動電路121包括第三N型電晶體NM3及第四N型電晶體NM4。第三N型電晶體NM3具有第七汲極D7、第七閘極G7及第七源極S7。第七汲極D7耦接第三電源端PT3,第七源極S7耦接第四電源端PT4,第七閘極G7耦接第三輸入端IP3。第四N型電晶體NM4具有第八汲極D8、第八閘極G8及第八源極S8。第八汲極D8耦接第二輸出端OP2,第八源極S8耦接第四電源端PT4,第八閘極G8耦接第四輸入端IP4。Further, the N-type differential circuit 121 includes a third N-type transistor NM3 and a fourth N-type transistor NM4. The third N-type transistor NM3 has a seventh drain D7, a seventh gate G7, and a seventh source S7. The seventh drain D7 is coupled to the third power terminal PT3, the seventh source S7 is coupled to the fourth power terminal PT4, and the seventh gate G7 is coupled to the third input terminal IP3. The fourth N-type transistor NM4 has an eighth drain D8, an eighth gate G8, and an eighth source S8. The eighth drain D8 is coupled to the second output terminal OP2, the eighth source S8 is coupled to the fourth power terminal PT4, and the eighth gate G8 is coupled to the fourth input terminal IP4.
在本實例中,偏壓單元130’包括第五P型電晶體PM5及第五N型電晶體NM5。第五P型電晶體PM5具有第九源極S9、第九閘極G9及第九汲極D9。第九源極S9耦接第一閘極G1,第九汲極D9耦接第二閘極G2,第九閘極G9接收第一參考電壓VR1,其中第五P型電晶體PM5受控於第一參考電壓VR1而導通或截止。第五N型電晶體NM5具有第十汲極D10、第十閘極G10及第十源極S10。第十汲極D10耦接第一閘極G1,第九源極S9耦接第二閘極G2,第十閘極G10接收第二參考電壓VR2,其中第五N型電晶體NM5受控於第二參考電壓VR2而導通或截止。In the present example, the bias unit 130' includes a fifth P-type transistor PM5 and a fifth N-type transistor NM5. The fifth P-type transistor PM5 has a ninth source S9, a ninth gate G9, and a ninth drain D9. The ninth source S9 is coupled to the first gate G1, the ninth gate D9 is coupled to the second gate G2, and the ninth gate G9 receives the first reference voltage VR1, wherein the fifth P-type transistor PM5 is controlled by the first A reference voltage VR1 is turned on or off. The fifth N-type transistor NM5 has a tenth drain D10, a tenth gate G10, and a tenth source S10. The tenth drain D10 is coupled to the first gate G1, the ninth source S9 is coupled to the second gate G2, and the tenth gate G10 receives the second reference voltage VR2, wherein the fifth N-type transistor NM5 is controlled by the first The second reference voltage VR2 is turned on or off.
圖3為依據本發明一實施例的圖2的輸入電壓上升時的驅動波形示意圖。請參照圖2及圖3,在本實施例中,當輸入電壓Vin上升時(如圖3所示輸入電壓Vin的上升緣),輸入電壓Vin會大於輸出電壓Vout,代表輸出緩衝器100’對輸出端(未繪示)充電以抬升輸出電壓Vout。此時,當輸入電壓Vin上升時,第四P型電晶體PM4的通道會變小,因此流至第三P型電晶體PM3的電流增加,進而第二電源端PT2的電壓VPT2會上升。當第二電源端PT2的電壓VPT2上升時,第二P型電晶體PM2的通道會變小,以致於第一尾電流it1會變小,進而第一電源端PT1的電壓VPT1會下降。當第一電源端PT1的電壓VPT1下降時,第四P型電晶體PM4的通道的關閉速度會加快。藉此,第一比較單元110’處於關閉狀態,以致於第一比較單元110’對第一閘極G1及第二閘極G2的充電能力會大幅減弱,甚至消失(亦即無充電能力)。FIG. 3 is a schematic diagram of driving waveforms when the input voltage of FIG. 2 rises according to an embodiment of the invention. Referring to FIG. 2 and FIG. 3, in the embodiment, when the input voltage Vin rises (as shown in the rising edge of the input voltage Vin as shown in FIG. 3), the input voltage Vin will be greater than the output voltage Vout, representing the output buffer 100'. The output (not shown) is charged to raise the output voltage Vout. At this time, when the input voltage Vin rises, the channel of the fourth P-type transistor PM4 becomes smaller, so the current flowing to the third P-type transistor PM3 increases, and the voltage V PT2 of the second power supply terminal PT2 rises. When the voltage V PT2 of the second power terminal PT2 rises, the channel of the second P-type transistor PM2 becomes smaller, so that the first tail current i t1 becomes smaller, and the voltage V PT1 of the first power terminal PT1 decreases. . When the voltage V PT1 of the first power terminal PT1 falls, the closing speed of the channel of the fourth P-type transistor PM4 is increased. Thereby, the first comparison unit 110' is in a closed state, so that the charging ability of the first comparison unit 110' to the first gate G1 and the second gate G2 is greatly weakened or even disappeared (ie, no charging capability).
當輸入電壓Vin上升時,第四N型電晶體NM4的通道會變大,並且第三N型電晶體NM3流至第二N型電晶體NM2的電流減少,進而第三電源端PT3的電壓VPT3會上升。當第三電源端PT3的電壓VPT3上升時,第二N型電晶體NM2的通道會變大,以致於第二尾電流it2會變大,進而第四電源端PT4的電壓VPT4會下降。當第四電源端PT4的電壓VPT4下降時,第四N型電晶體NM4的通道的開啟速度會加快。藉此,第二比較單元120’處於開啟狀態,以致於第二比較單元120’對第一閘極G1及第二閘極G2的放電能力會大幅增加。When the input voltage Vin rises, the channel of the fourth N-type transistor NM4 becomes larger, and the current of the third N-type transistor NM3 flowing to the second N-type transistor NM2 decreases, and thus the voltage V of the third power terminal PT3 PT3 will rise. When the voltage V PT3 of the third power terminal PT3 rises, the channel of the second N-type transistor NM2 becomes larger, so that the second tail current i t2 becomes larger, and the voltage V PT4 of the fourth power terminal PT4 decreases. . When the voltage V PT4 of the fourth power terminal PT4 falls, the opening speed of the channel of the fourth N-type transistor NM4 is accelerated. Thereby, the second comparison unit 120' is in an on state, so that the discharge capability of the second comparison unit 120' to the first gate G1 and the second gate G2 is greatly increased.
依據上述,當輸入電壓Vin上升時,第一比較單元110’處於關閉狀態而使其充電能力減弱或消失,第二比較單元120’處於開啟狀態而使其放電能力增加。此時,第一閘極G1及第二閘極G2的電壓VG1及VG2會快速下降至接近或等於接地電壓GND,亦即第一比較單元110’及第二比較單元120’輸出的低電壓VL會接近或等於接地電壓GND,以致於第一P型電晶體PM1的通道會快速開啟以提升其充電能力,並且第一N型電晶體NM1的通道會快速關閉以降低其放電能力。在第一P型電晶體PM1的通道會快速開啟且第一N型電晶體NM1的通道會快速關閉的情況下,輸出端的充電速度會加快,亦即輸出電壓Vout的上升速度會增加,因此可大幅地降低輸出電壓Vout上升的暫態時間。According to the above, when the input voltage Vin rises, the first comparison unit 110' is in the off state to make its charging ability weak or disappear, and the second comparison unit 120' is in the on state to increase its discharge capacity. At this time, the voltages V G1 and V G2 of the first gate G1 and the second gate G2 rapidly drop to be close to or equal to the ground voltage GND, that is, the output of the first comparison unit 110' and the second comparison unit 120' is low. The voltage VL is close to or equal to the ground voltage GND, so that the channel of the first P-type transistor PM1 is quickly turned on to increase its charging capability, and the channel of the first N-type transistor NM1 is quickly turned off to lower its discharge capability. When the channel of the first P-type transistor PM1 is quickly turned on and the channel of the first N-type transistor NM1 is quickly turned off, the charging speed of the output terminal is accelerated, that is, the rising speed of the output voltage Vout is increased, so The transient time at which the output voltage Vout rises is drastically reduced.
圖4為依據本發明一實施例的圖2的輸入電壓下降時的驅動波形示意圖。請參照圖2及圖4,在本實施例中,當輸入電壓Vin下降時(如圖4所示輸入電壓Vin的下降緣),輸入電壓Vin會小於輸出電壓Vout,代表輸出緩衝器100’對輸出端(未繪示)放電以降低輸出電壓Vout。此時,當輸入電壓Vin下降時,第四P型電晶體PM4的通道會變大,因此流至第三P型電晶體PM3的電流減少,進而第二電源端PT2的電壓VPT2會下降。當第二電源端PT2的電壓VPT2下降時,第二P型電晶體PM2的通道會變大,以致於第一尾電流it1會變大,進而第一電源端PT1的電壓VPT1會上升。當第一電源端PT1的電壓VPT1上升時,第四P型電晶體PM4的通道的開啟速度會加快。藉此,第一比較單元110’處於開啟狀態,以致於第一比較單元110’對第一閘極G1及第二閘極G2的充電能力會大幅增加。4 is a schematic diagram of driving waveforms when the input voltage of FIG. 2 is decreased, in accordance with an embodiment of the present invention. Referring to FIG. 2 and FIG. 4, in the embodiment, when the input voltage Vin falls (as shown in FIG. 4, the falling edge of the input voltage Vin), the input voltage Vin will be smaller than the output voltage Vout, representing the output buffer 100'. The output (not shown) discharges to reduce the output voltage Vout. At this time, when the input voltage Vin decreases, the channel of the fourth P-type transistor PM4 becomes large, so the current flowing to the third P-type transistor PM3 decreases, and the voltage V PT2 of the second power supply terminal PT2 decreases. When the voltage V PT2 of the second power terminal PT2 falls, the channel of the second P-type transistor PM2 becomes larger, so that the first tail current i t1 becomes larger, and the voltage V PT1 of the first power terminal PT1 rises. . When the voltage V PT1 of the first power terminal PT1 rises, the opening speed of the channel of the fourth P-type transistor PM4 is increased. Thereby, the first comparison unit 110' is in an on state, so that the charging ability of the first comparison unit 110' to the first gate G1 and the second gate G2 is greatly increased.
當輸入電壓Vin下降時,第四N型電晶體NM4的通道會變小,並且第三N型電晶體NM3流至第二N型電晶體NM2的電流增加,進而第三電源端PT3的電壓VPT3會下降。當第三電源端PT3的電壓VPT3下降時,第二N型電晶體NM2的通道會變小,以致於第二尾電流it2會變小,進而第四電源端PT4的電壓VPT4會上升。當第四電源端PT4的電壓VPT4上升時,第四N型電晶體NM4的通道的關閉速度會加快。藉此,第二比較單元120’處於關閉狀態,以致於第二比較單元120’對第一閘極G1及第二閘極G2的放電能力會大幅減少,甚或消失(亦即無放電能力)。When the input voltage Vin decreases, the channel of the fourth N-type transistor NM4 becomes smaller, and the current of the third N-type transistor NM3 flowing to the second N-type transistor NM2 increases, and thus the voltage V of the third power terminal PT3 PT3 will drop. When the voltage V PT3 of the third power terminal PT3 falls, the channel of the second N-type transistor NM2 becomes smaller, so that the second tail current i t2 becomes smaller, and the voltage V PT4 of the fourth power terminal PT4 rises. . When the voltage V PT4 of the fourth power supply terminal PT4 rises, the closing speed of the channel of the fourth N-type transistor NM4 is increased. Thereby, the second comparison unit 120' is in a closed state, so that the discharge capability of the second comparison unit 120' to the first gate G1 and the second gate G2 is greatly reduced or even disappeared (ie, no discharge capability).
依據上述,當輸入電壓Vin下降時,第一比較單元110’處於開啟狀態而使其充電能力增加,第二比較單元120’處於開啟狀態而使其放電能力減弱或消失。此時,第一閘極G1及第二閘極G2的電壓VG1及VG2會快速上升至接近或等於系統電壓VDDA,亦即第一比較單元110’及第二比較單元120’輸出的高電壓VH會接近或等於系統電壓VDDA,以致於第一P型電晶體PM1的通道會快速關閉以降低其充電能力,並且第一N型電晶體NM1的通道會快速開啟以增加其放電能力。在第一P型電晶體PM1的通道會快速關閉且第一N型電晶體NM1的通道會快速開啟的情況下,輸出端的放電速度會加快,亦即輸出電壓Vout的下降速度會增加,因此可大幅地降低輸出電壓Vout下降的暫態時間。According to the above, when the input voltage Vin falls, the first comparison unit 110' is in an on state to increase its charging ability, and the second comparison unit 120' is in an on state to make its discharge capability weak or disappear. At this time, the voltages V G1 and V G2 of the first gate G1 and the second gate G2 rapidly rise to be close to or equal to the system voltage VDDA, that is, the output of the first comparison unit 110' and the second comparison unit 120'. The voltage VH will be close to or equal to the system voltage VDDA, so that the channel of the first P-type transistor PM1 will be quickly turned off to lower its charging capability, and the channel of the first N-type transistor NM1 will be quickly turned on to increase its discharge capability. When the channel of the first P-type transistor PM1 is quickly turned off and the channel of the first N-type transistor NM1 is quickly turned on, the discharge speed of the output terminal is accelerated, that is, the falling speed of the output voltage Vout is increased, so The transient time at which the output voltage Vout drops is drastically reduced.
依據上述,在本實施例中,輸出緩衝器100’可透過簡單的電路來實施,因此輸出緩衝器100’可在極低的靜態電流下工作。並且,相對於傳統軌對軌輸出緩衝器,本實施例的輸出緩衝器100’的電晶體個數較少,因此可以大幅降低源極驅動器之晶片面積。In accordance with the above, in the present embodiment, the output buffer 100' can be implemented by a simple circuit, so that the output buffer 100' can operate at an extremely low quiescent current. Moreover, the output buffer 100' of the present embodiment has a smaller number of transistors than the conventional rail-to-rail output buffer, so that the wafer area of the source driver can be greatly reduced.
綜上所述,本發明實施例的輸出緩衝器,其第一比較單元及第二比較單元依據輸入電壓及輸出電壓的比較結果控制P型電晶體及N型電晶體為導通或截止,並且同步調整第一比較單元及第二比較單元的第一尾電流及第二尾電流,藉此達到對輸入電壓及輸出電壓的壓差快速暫態響應的能力。並且,輸出緩衝器可透過簡單的電路來實施,因此輸出緩衝器可工作於極低的靜態電流下,並且可大幅降低源極驅動器之晶片面積。In summary, in the output buffer of the embodiment of the present invention, the first comparing unit and the second comparing unit control the P-type transistor and the N-type transistor to be turned on or off according to the comparison result of the input voltage and the output voltage, and are synchronized. The first tail current and the second tail current of the first comparison unit and the second comparison unit are adjusted, thereby achieving the ability to quickly respond to the differential pressure of the input voltage and the output voltage. Moreover, the output buffer can be implemented through a simple circuit, so the output buffer can operate at very low quiescent current and can greatly reduce the wafer area of the source driver.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
100、100’...輸出緩衝器100, 100’. . . Output buffer
110、110’...第一比較單元110, 110’. . . First comparison unit
111...P型差動電路111. . . P type differential circuit
120、120’...第二比較單元120, 120’. . . Second comparison unit
121...N型差動電路121. . . N type differential circuit
130、130’...偏壓單元130, 130’. . . Bias unit
CS1、CS2...電流源CS1, CS2. . . Battery
D1~D10...汲極D1~D10. . . Bungee
G1~G10‧‧‧閘極 G1~G10‧‧‧ gate
GND‧‧‧接地電壓 GND‧‧‧ Grounding voltage
IP1~IP4‧‧‧輸入端 IP1~IP4‧‧‧ input
it1、it2‧‧‧尾電流 i t1 , i t2 ‧‧‧ tail current
NM1~NM5‧‧‧N型電晶體 NM1~NM5‧‧‧N type transistor
OP1、OP2‧‧‧輸出端 OP1, OP2‧‧‧ output
PM1~PM5‧‧‧P型電晶體 PM1~PM5‧‧‧P type transistor
PT1~PT4‧‧‧電源端 PT1~PT4‧‧‧ power terminal
S1~S10‧‧‧源極 S1~S10‧‧‧ source
VDDA‧‧‧系統電壓 VDDA‧‧‧ system voltage
VGG‧‧‧偏壓 VGG‧‧‧ bias
VH‧‧‧高電壓 VH‧‧‧High voltage
Vin‧‧‧輸入電壓 Vin‧‧‧Input voltage
VL‧‧‧低電壓 VL‧‧‧low voltage
Vout‧‧‧輸出電壓 Vout‧‧‧ output voltage
VPT1~VPT4、VG1、VG2‧‧‧電壓 V PT1 ~V PT4 , V G1 , V G2 ‧‧‧ voltage
VR1、VR2‧‧‧參考電壓VR1, VR2‧‧‧ reference voltage
圖1為依據本發明一實施例的輸出緩衝器的系統示意圖。1 is a system diagram of an output buffer in accordance with an embodiment of the present invention.
圖2為依據本發明一實施例的輸出緩衝器的電路示意圖。2 is a circuit diagram of an output buffer in accordance with an embodiment of the present invention.
圖3為依據本發明一實施例的圖2的輸入電壓上升時的驅動波形示意圖。FIG. 3 is a schematic diagram of driving waveforms when the input voltage of FIG. 2 rises according to an embodiment of the invention.
圖4為依據本發明一實施例的圖2的輸入電壓下降時的驅動波形示意圖。4 is a schematic diagram of driving waveforms when the input voltage of FIG. 2 is decreased, in accordance with an embodiment of the present invention.
100...輸出緩衝器100. . . Output buffer
110...第一比較單元110. . . First comparison unit
120...第二比較單元120. . . Second comparison unit
130...偏壓單元130. . . Bias unit
D1、D2...汲極D1, D2. . . Bungee
G1、G2...閘極G1, G2. . . Gate
GND...接地電壓GND. . . Ground voltage
it1、it2...尾電流i t1 , i t2 . . . Tail current
NM1...N型電晶體NM1. . . N type transistor
PM1...P型電晶體PM1. . . P-type transistor
S1、S2...源極S1, S2. . . Source
VDDA...系統電壓VDDA. . . System voltage
VH...高電壓VH. . . high voltage
Vin...輸入電壓Vin. . . Input voltage
VL...低電壓VL. . . low voltage
Vout...輸出電壓Vout. . . The output voltage
Claims (10)
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