TWI584389B - Semiconductor device manufacturing method and manufacturing device - Google Patents
Semiconductor device manufacturing method and manufacturing device Download PDFInfo
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- TWI584389B TWI584389B TW104123088A TW104123088A TWI584389B TW I584389 B TWI584389 B TW I584389B TW 104123088 A TW104123088 A TW 104123088A TW 104123088 A TW104123088 A TW 104123088A TW I584389 B TWI584389 B TW I584389B
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Description
本發明有關把光學玻璃或是透鏡等的光學零件安裝到固態攝像元件等的半導體元件進而製造半導體裝置的半導體裝置之製造方法及製造裝置。 The present invention relates to a method and a device for manufacturing a semiconductor device in which a semiconductor device such as an optical glass or a lens is mounted on a semiconductor device such as a solid-state image sensor.
最近幾年,隨著以智慧型電話或是平板終端為代表的電子機器的小型化及高性能化的進展,使用在這些終端的裝置的小型化、及高密度化的潮流加速。這類的裝置之中,光學零件與半導體元件之距離,亦即間隙,大大影響到裝置的特性。 In recent years, with the advancement of miniaturization and high performance of electronic devices represented by smart phones or tablet terminals, the use of devices at these terminals has been reduced in size and the trend of high density has been accelerated. Among such devices, the distance between the optical component and the semiconductor component, that is, the gap, greatly affects the characteristics of the device.
作為這類的裝置之其中一例,是有攝像裝置。攝像裝置的封裝方法,係從以往的封裝方法,正在轉移到可以小型化的晶片尺寸封裝。在此,所謂以往的封裝方法,乃是藉由陶瓷等的封裝氣密密封光學玻璃與固態攝像元件之方法。在晶片尺寸封裝方式的攝像裝置方面,是以在固態攝像元件的受光面正上方或是受光部的外周圍部供給接合構件也就是接著樹脂,並在該接著樹脂之上接合光學玻璃的方式,成為密封受光部之構造。 As an example of such a device, there is an imaging device. The packaging method of the image pickup device is shifting from a conventional packaging method to a wafer size package that can be miniaturized. Here, the conventional packaging method is a method of hermetically sealing an optical glass and a solid-state image sensor by a package such as ceramic. In the image-capturing device of the chip-size package type, a bonding member, that is, a resin, is applied directly to the outer peripheral portion of the light-receiving portion or the outer peripheral portion of the light-receiving portion, and the optical glass is bonded to the adhesive resin. It becomes a structure which seals a light-receiving part.
在攝像裝置方面,為了契合焦點距離,光學玻璃與固態攝像元件的距離必須成為一定。在以往方式的攝像裝置中,藉由利用陶瓷多層基板或是玻璃或是樹脂等所製成的中空構造之中繼基板,矯正光學玻璃與固態攝像元件之距離。但是,在晶片尺寸封裝中,因為藉由接著劑進行接合,並無矯正光學玻璃與固態攝像元件的距離之構件。為此,有必要高精度地安裝光學玻璃等的光學零件與固態攝像元件等的半導體元件之間的間隙。 In terms of an imaging device, in order to match the focal length, the distance between the optical glass and the solid-state imaging element must be constant. In the conventional imaging device, the distance between the optical glass and the solid-state imaging element is corrected by using a ceramic multilayer substrate, a relay substrate having a hollow structure made of glass or resin, or the like. However, in the wafer size package, since bonding is performed by an adhesive, there is no member for correcting the distance between the optical glass and the solid-state image sensor. Therefore, it is necessary to mount a gap between an optical component such as an optical glass and a semiconductor element such as a solid-state image sensor with high precision.
作為解決高精度安裝問題的方法,係提案有為了測量光學零件與半導體元件的間隔的長度設有變位感測器,接合光學零件與半導體元件使得光學零件與半導體元件的間隔成為正確的期望的值之半導體接合方法(例如,參閱專利文獻1)。 As a method for solving the problem of high-precision mounting, it is proposed to provide a displacement sensor for measuring the length of the interval between the optical component and the semiconductor element, and to bond the optical component and the semiconductor component so that the interval between the optical component and the semiconductor component becomes a correct expectation. A semiconductor bonding method of values (for example, refer to Patent Document 1).
圖6為在專利文獻1所提案的半導體接合裝置之構成圖。說明有關使用圖6般的半導體接合裝置之半導體裝置製造方法。把光學零件101保持在平臺104,把半導體元件102保持在工具105。之後,使平臺104移動在水平方向使得光學零件101與半導體元件102位在指定的相對位置。接著,使固定半導體元件102的工具105降下的話,半導體元件102與設在光學零件101上的接著劑103接觸。更進一步,工具105降下到指定的位置後,利用紫外光線照射使接著劑103硬化。在此,在平臺104上設有變位感測器106,測定工具105與平臺104之間隙,控制押壓力使得其成為指定的間隙。為此,可以高精度地 安裝構件間間隙。 FIG. 6 is a configuration diagram of a semiconductor bonding apparatus proposed in Patent Document 1. A method of manufacturing a semiconductor device using the semiconductor bonding apparatus of FIG. 6 will be described. The optical component 101 is held on the platform 104 to hold the semiconductor component 102 in the tool 105. Thereafter, the platform 104 is moved in a horizontal orientation such that the optical component 101 and the semiconductor component 102 are positioned at a specified relative position. Next, when the tool 105 for fixing the semiconductor element 102 is lowered, the semiconductor element 102 comes into contact with the adhesive 103 provided on the optical component 101. Further, after the tool 105 is lowered to the designated position, the adhesive 103 is hardened by irradiation with ultraviolet light. Here, a displacement sensor 106 is provided on the platform 104, and the gap between the measuring tool 105 and the platform 104 is controlled to control the pressing force so that it becomes a designated gap. For this reason, it is possible to accurately Install the gap between the components.
圖7為概念性說明利用在專利文獻1所提案的半導體接合方法所製造出的半導體裝置的構造之剖視圖。被搭載在平臺104的光學零件101、與被保持在工具105的半導體元件102,乃是藉由接著劑103被接著了的構造。該構造,係藉由用半導體元件102壓潰擴散被1點塗布在光學零件101的中央部的接著劑103的方式所製作出的。因為一邊控制工具105與平臺104之間的間隙一邊做貼附的緣故,得到半導體元件102與光學零件101之間的間隙為一定的半導體裝置。 FIG. 7 is a cross-sectional view conceptually illustrating a structure of a semiconductor device manufactured by the semiconductor bonding method proposed in Patent Document 1. The optical component 101 mounted on the stage 104 and the semiconductor component 102 held by the tool 105 are connected by the adhesive 103. This structure is produced by crushing and spreading the adhesive 103 applied to the central portion of the optical component 101 at one point by the semiconductor element 102. Since the gap between the semiconductor element 102 and the optical component 101 is constant while the gap between the control tool 105 and the stage 104 is attached, a semiconductor device having a constant gap is obtained.
在此,在利用半導體元件102壓潰接著劑103的製程中,接著劑103從半導體元件102的中央朝向外周圍部浸濕擴展。在接著劑103的塗布量少,且半導體元件102與光學零件101的間隙大的情況下,接著劑103不會浸濕擴展到半導體元件102的平面方向的角隅部附近。 Here, in the process of crushing the adhesive 103 by the semiconductor element 102, the adhesive 103 is wetted and spread from the center of the semiconductor element 102 toward the outer peripheral portion. When the coating amount of the adhesive 103 is small and the gap between the semiconductor element 102 and the optical component 101 is large, the adhesive 103 does not wet and spread to the vicinity of the corner portion of the semiconductor element 102 in the planar direction.
被搭載在智慧型電話或是平板等的行動式機器之攝像裝置,係在使用環境下,被要求有耐落下衝擊性及防潮性等高的可靠性。若是接著劑103沒有浸濕擴展到半導體元件102整個面的話,是無法確保接著強度,會因行動式機器使用時的落下衝擊或是溫度變化而在半導體元件102與接著劑103的界面發生剝離,或是從周圍環境水分浸入等變成接著不良。為此,接著劑103有必要浸濕擴展覆蓋到半導體元件102整個面,從量產現場的製造工程來看,被要求有接著不良的檢查。 The imaging device mounted on a mobile phone such as a smart phone or a tablet is required to have high reliability such as drop impact resistance and moisture resistance in a use environment. If the adhesive 103 is not wetted and spread over the entire surface of the semiconductor element 102, the bonding strength cannot be ensured, and peeling occurs at the interface between the semiconductor element 102 and the adhesive 103 due to a drop impact or a temperature change during use of the mobile device. Or it may become bad after being immersed in the surrounding environment. For this reason, it is necessary for the adhesive 103 to be wet-covered to cover the entire surface of the semiconductor element 102, and from the viewpoint of the manufacturing process at the mass production site, it is required to have a bad inspection.
作為接著不良的檢測方法,提案有:對使用接著劑貼附了光學零件的接著製品,使鐳射光一邊斜斜照射一邊移動,根據反射光量,判定是否接著良好之接著不良部檢測方法(例如,參閱專利文獻2)。圖8為表示在專利文獻2提案的接著不良檢測方法之一實施例的說明圖。如圖8所示,接著製品114中,玻璃等的光學零件113是利用接著劑112與基板111接著。該接著製品114的接著不良檢測裝置115,係在接著製品114的上方之其中一方處設有鐳射振盪器118,另一方處設有接受反射光的功率計120。尚且,鐳射振盪器118及功率計120,係分別被固定在框116,光學零件113與接著劑112的界面124所成的角度θ總是為指定的值。 As a method of detecting a defective defect, it is proposed to move the laser light while obliquely illuminating the adhesive product using an adhesive, and to determine whether or not to follow the defective portion detection method based on the amount of reflected light (for example, See Patent Document 2). FIG. 8 is an explanatory diagram showing an embodiment of the defect detection method proposed in Patent Document 2. As shown in FIG. 8, in the article 114, the optical component 113 such as glass is followed by the substrate 111 by the adhesive 112. The adhesive defect detecting device 115 of the adhesive article 114 is provided with a laser oscillator 118 at one of the upper portions of the article 114, and a power meter 120 for receiving reflected light at the other end. Further, the laser oscillator 118 and the power meter 120 are respectively fixed to the frame 116, and the angle θ formed by the interface 124 between the optical component 113 and the adhesive 112 is always a predetermined value.
說明使用該檢測裝置115之接著不良的檢測方法。首先,接著製品114沿某移動方向移動,使檢查裝置115往復動作在相對於前述移動方向正交的方向,檢查接著劑112。來自鐳射振盪器118的鐳射光117,係以相對於接著劑112為指定的角度θ進行照射,因應接著劑112的折射率一邊折射一邊透過,在光學零件113與接著劑112的界面124反射,以指定的角度θ成為反射光從接著製品114放出。用功率計120接受被放出的反射光。若接著為良好的話,用功率計120所接受到的反射光量的輸出值輸出為閾值以上,接著不良的話,反射角度成為不規則,用功率計120所接受到的反射光量輸出為比閾值還低。經此,可以檢測接著不良。 A method of detecting the failure of the detection device 115 will be described. First, the product 114 is moved in a certain moving direction, and the inspection device 115 is reciprocated in the direction orthogonal to the moving direction to inspect the adhesive 112. The laser light 117 from the laser oscillator 118 is irradiated at a predetermined angle θ with respect to the adhesive 112, and is transmitted while being refracted by the refractive index of the adhesive 112, and is reflected at the interface 124 between the optical component 113 and the adhesive 112. The reflected light is emitted from the subsequent product 114 at a predetermined angle θ. The reflected light that is emitted is received by the power meter 120. If it is good next, the output value of the amount of reflected light received by the power meter 120 is output as a threshold value or more. If the value is not good, the reflection angle becomes irregular, and the amount of reflected light received by the power meter 120 is lower than the threshold. . Through this, it is possible to detect the subsequent failure.
〔專利文獻1〕日本特開2005-252008號專利公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-252008
〔專利文獻2〕日本特公平7-113609號專利公報 [Patent Document 2] Japanese Patent Publication No. 7-113609
裝置的小型化及高功能化的進化顯著,光學零件及半導體元件的小型化的潮流更上一層加速中。在確保接著強度、確保高的可靠性方面,被要求有對小的光學零件不會過多或過少地擴展接著劑、以及比以往更高精度地控制接著劑的厚度。 The miniaturization and high functionality of the device have evolved significantly, and the trend toward miniaturization of optical components and semiconductor components has been accelerated. In order to secure the adhesion strength and ensure high reliability, it is required to extend the thickness of the adhesive agent to the small optical component without excessively or excessively expanding the adhesive, and to control the adhesive more accurately than ever.
但是,在專利文獻1所提案的半導體接合方法中,即便控制工具105與平臺104之間的間隙,光學零件或是半導體元件的厚度還是散亂的緣故,是有接著劑厚度散亂的問題。 However, in the semiconductor bonding method proposed in Patent Document 1, even if the gap between the control tool 105 and the stage 104 is small, the thickness of the optical component or the semiconductor element is scattered, which is a problem in that the thickness of the adhesive is scattered.
而且,利用專利文獻1所提案的半導體接合方法製作出的半導體裝置,係與接著劑103的浸濕擴展狀態無關,有被紫外線硬化,在後製程流出不合格品的問題。 In addition, the semiconductor device produced by the semiconductor bonding method proposed in Patent Document 1 has a problem that it is cured by ultraviolet rays regardless of the state of wet deposition of the adhesive 103, and the defective product flows out in the subsequent process.
但是,在藉由專利文獻2所提案的接著不良檢測方法做了檢查的情況下,在光學零件的外周圍部或是角隅部附近,光亂反射而透過光的光量下降,是有即便是 接著合格品也會被判定成接著不良的問題。而且,在專利文獻2所提案的接著不良檢測裝置,係與專利文獻1所提案的半導體裝置的製造裝置為各自獨立的機構的緣故,變成有必要個別準備半導體製造裝置與接著不良檢測裝置,生產現場上設備導入成本變高,同時從檢知有接著不良到反映給半導體製造條件為止需要時間,在這期間會有持續流出接著不合格品的問題。 However, when the inspection is performed by the defect detection method proposed in Patent Document 2, the amount of light transmitted by the light is reduced in the outer peripheral portion or the corner portion of the optical component, and even if it is Then the quality product is also judged to be a problem that is bad. In addition, in the case of the defect detection device proposed in the patent document 2, the manufacturing device of the semiconductor device proposed in Patent Document 1 is an independent mechanism, and it is necessary to separately prepare the semiconductor manufacturing device and the subsequent defect detecting device. The cost of introducing the equipment on the site becomes high, and it takes time from the detection of the defective defect to the reflection of the semiconductor manufacturing conditions, and there is a problem that the defective product continues to flow out during the period.
本發明有鑑於上述課題,其目的在於提供一種半導體裝置之製造方法及製造裝置,係在半導體元件的安裝製程內可以高精度地確保光學零件與半導體元件等的基板之間隙,更進一步可以檢知到接著構件的擴展不良後防止接著不合格品朝後製程流出。 In view of the above, an object of the present invention is to provide a method and a device for manufacturing a semiconductor device, which are capable of accurately detecting a gap between an optical component and a substrate such as a semiconductor element in a semiconductor device mounting process, and further detecting After the expansion of the component is poor, the defective product is prevented from flowing out to the subsequent process.
為了達成上述目的,本發明係構成如下。 In order to achieve the above object, the present invention is constituted as follows.
根據本發明之1個態樣,提供一種半導體裝置之製造方法,乃是在介隔著接合構件安裝矩形的安裝構件到基板之半導體裝置之製造方法;其特徵為具備:吸附固定製程,係把前述接合構件,供給到前述安裝構件或是前述基板之其中任何一個後,使吸附工具移動在上下方向並把前述安裝構件吸附固定到前述吸附工具;位置資訊取得製程,係在前述吸附固定製程後,利用位置資訊取得裝置,測定用前述吸附工具所吸附的前述安裝構件之與前述上下方向交叉的橫方向的位置,取得位置 資訊;對位製程,係在前述位置資訊取得製程後,根據以前述位置資訊取得製程取得的前述位置資訊,用控制裝置控制前述吸附工具的前述橫方向的移動使得前述安裝構件與前述基板對向,對合前述橫方向的位置;接近製程,係在前述對位製程後,經由照射檢測光透過前述安裝構件及前述接合構件之中的方式,利用距離測定裝置測定前述安裝構件與前述基板之間的前述上下方向的距離,利用前述控制裝置控制前述吸附工具的驅動,使前述吸附工具移動到用前述距離測定裝置測定出的測定值成為指定的距離之位置為止,使前述安裝構件與前述基板接近;接著狀態檢查製程,係在前述接近製程後,照射了透過前述安裝構件的前述檢測光後,利用接著狀態檢查裝置檢查前述接合構件的接著狀態;以及硬化製程,係在前述接近製程後,利用硬化裝置硬化前述接合構件;前述接合構件的接著狀態檢查製程中,把前述檢測光,沿前述上下方向照射到前述安裝構件之至少1個角隅部附近,利用該反射光的光量用前述接著狀態檢查裝置檢查接著狀態是否良好。 According to one aspect of the present invention, there is provided a method of manufacturing a semiconductor device, which is a method of manufacturing a semiconductor device in which a rectangular mounting member is mounted to a substrate via a bonding member, and is characterized in that: an adsorption fixing process is provided After the bonding member is supplied to any one of the mounting member or the substrate, the adsorption tool is moved in the vertical direction and the mounting member is adsorbed and fixed to the adsorption tool; and the position information acquisition process is performed after the adsorption fixing process The position information acquisition device measures the position in the lateral direction of the mounting member that is sucked by the suction tool and intersects the vertical direction, and acquires the position. The information processing process is configured to control the lateral movement of the adsorption tool by the control device according to the position information obtained by the position information acquisition process after the position information acquisition process, so that the mounting member faces the substrate The position in the horizontal direction is the same as the position in the lateral direction, and the distance between the mounting member and the substrate is measured by the distance measuring device after the alignment detecting process passes through the mounting member and the bonding member. The distance in the vertical direction is controlled by the control device to control the driving of the adsorption tool, and the adsorption tool is moved until the measurement value measured by the distance measuring device reaches a predetermined distance, and the mounting member is close to the substrate. And the state inspection process, after the proximity process, irradiating the detection light transmitted through the mounting member, and then inspecting the bonding state of the bonding member by the state inspection device; and the curing process is performed after the proximity process Hardening device before hardening In the bonding state inspection process of the bonding member, the detection light is irradiated to the vicinity of at least one corner portion of the mounting member in the vertical direction, and the amount of the reflected light is checked by the subsequent state inspection device. The status is good.
根據本發明之別一態樣,提供一種半導體裝置之製造裝置,具備:吸附工具,係把接合構件,供給到矩形的安裝構件或是基板之其中任何一個後,移動在上下 方向,吸附固定前述安裝構件;位置資訊取得裝置,係測定用前述吸附工具所吸附的前述安裝構件之與前述上下方向交叉的橫方向的位置,取得位置資訊;控制裝置,係根據以前述位置資訊取得裝置取得的前述位置資訊,控制前述吸附工具的前述橫方向的移動使得前述安裝構件與前述基板對向,對合前述橫方向的位置;距離測定裝置,係在對合了前述橫方向的位置之狀態下,經由照射檢測光透過前述安裝構件及前述接合構件之中的方式,測定前述安裝構件與前述基板之間的前述上下方向的距離;接著狀態檢查裝置,係利用前述控制裝置控制前述吸附工具的驅動,使前述吸附工具移動到用前述距離測定裝置測定出的測定值成為指定的距離之位置為止,使前述安裝構件與前述基板接近後,照射透過前述安裝構件的前述檢測光檢查前述接合構件的接著狀態;以及硬化裝置,係硬化前述接合構件;前述接著狀態檢查裝置,係把前述檢測光,沿前述上下方向照射到前述安裝構件之至少1個角隅部附近,利用該反射光的波形檢查接著狀態是否良好。 According to another aspect of the present invention, a semiconductor device manufacturing apparatus includes: an adsorption tool that feeds a bonding member to a rectangular mounting member or a substrate, and moves up and down Positioning and fixing the mounting member; the position information acquiring device measures the position in the lateral direction of the mounting member that is attracted by the suction tool and intersects with the vertical direction, and acquires position information; and the control device is based on the position information Acquiring the position information acquired by the device, controlling the movement of the suction tool in the lateral direction such that the mounting member faces the substrate, and aligning the position in the lateral direction; and the distance measuring device is in the position of the horizontal direction In a state where the irradiation detecting light passes through the mounting member and the bonding member, the distance between the mounting member and the substrate in the vertical direction is measured. Next, the state inspection device controls the adsorption by the control device. The driving of the tool moves the adsorption tool to a position where the measured value measured by the distance measuring device is a predetermined distance, and the mounting member is brought close to the substrate, and then the detection light is transmitted through the mounting member to inspect the bonding. Follow-up of the member And a curing device that cures the bonding member, and the bonding state inspection device irradiates the detection light to the vicinity of at least one corner portion of the mounting member in the vertical direction, and checks the state of the state by the waveform of the reflected light. Is it good?
根據本發明之前述態樣,在對安裝構件的基板之安裝製程內,可以高精度確保安裝構件與基板之間的 間隙,同時判別接著不良後可以防止接著不合格品之朝後製程的流出。 According to the foregoing aspect of the invention, it is possible to ensure high precision between the mounting member and the substrate in the mounting process of the substrate of the mounting member. The gap, while discriminating the subsequent failure, can prevent the outflow of the subsequent process of the defective product.
1、21‧‧‧安裝頭 1, 21‧‧‧ mounting head
1A、21a‧‧‧側壁 1A, 21a‧‧‧ side wall
1b‧‧‧本體 1b‧‧‧ Ontology
2、22‧‧‧透明吸附板 2, 22‧‧‧ transparent adsorption board
2a、22a‧‧‧吸附孔 2a, 22a‧‧‧Adsorption holes
3、23‧‧‧真空室 3, 23‧‧‧ vacuum chamber
4、24‧‧‧非接觸距離測定機構 4, 24‧‧‧ Non-contact distance measuring mechanism
5‧‧‧真空泵 5‧‧‧Vacuum pump
6、26‧‧‧鐳射光 6, 26‧‧‧Laser light
7、27‧‧‧平臺 7, 27‧‧‧ platform
8、28‧‧‧透明板 8, 28‧‧ ‧ transparent board
11、31、41‧‧‧安裝構件 11, 31, 41‧‧‧ Installation components
11a、11c‧‧‧角隅部 11a, 11c‧‧‧ corner
11b‧‧‧對角線 11b‧‧‧ diagonal
12、32、42‧‧‧基板 12, 32, 42‧‧‧ substrates
13、33、43‧‧‧接合構件 13, 33, 43‧‧‧ joint components
14‧‧‧辨識攝影機 14‧‧‧ID camera
24a‧‧‧非接觸距離測定部 24a‧‧‧Non-contact distance measurement department
31a、31c‧‧‧角隅部 31a, 31c‧‧‧ 隅 隅
31b‧‧‧對角線 31b‧‧‧ diagonal
41a‧‧‧中心位置 41a‧‧‧central location
41b、41c、41d、41e‧‧‧角隅部 41b, 41c, 41d, 41e‧‧‧ corner
44‧‧‧演算部 44‧‧‧ Calculation Department
90‧‧‧安裝頭部驅動機構 90‧‧‧Installing the head drive mechanism
91‧‧‧測定機構驅動機構 91‧‧‧Measurement mechanism drive mechanism
92‧‧‧位置資訊取得裝置 92‧‧‧Location information acquisition device
95‧‧‧驅動鏡片驅動機構 95‧‧‧Drive lens drive mechanism
97‧‧‧半導體裝置 97‧‧‧Semiconductor device
98‧‧‧硬化裝置 98‧‧‧ Hardening device
100‧‧‧控制裝置 100‧‧‧Control device
〔圖1A〕為表示本發明的第1實施方式中的半導體裝置的製造裝置的構成之概略剖視圖。 FIG. 1A is a schematic cross-sectional view showing a configuration of a manufacturing apparatus of a semiconductor device according to a first embodiment of the present invention.
〔圖1B〕為表示本發明的第1實施方式中的半導體裝置的製造裝置的構成之半導體裝置的俯視圖。 FIG. 1B is a plan view showing a semiconductor device having a configuration of a manufacturing apparatus of a semiconductor device according to the first embodiment of the present invention.
〔圖2A〕為依序表示本發明的第1實施方式中的半導體裝置的製造方法之概略剖視圖。 FIG. 2A is a schematic cross-sectional view showing a method of manufacturing the semiconductor device according to the first embodiment of the present invention.
〔圖2B〕為依序表示本發明的第1實施方式中的半導體裝置的製造方法之概略剖視圖。 FIG. 2B is a schematic cross-sectional view showing a method of manufacturing the semiconductor device according to the first embodiment of the present invention.
〔圖2C〕為依序表示本發明的第1實施方式中的半導體裝置的製造方法之概略剖視圖。 FIG. 2C is a schematic cross-sectional view showing a method of manufacturing the semiconductor device according to the first embodiment of the present invention.
〔圖2D〕為依序表示本發明的第1實施方式中的半導體裝置的製造方法之概略剖視圖。 FIG. 2D is a schematic cross-sectional view showing a method of manufacturing the semiconductor device according to the first embodiment of the present invention.
〔圖2E〕為依序表示本發明的第1實施方式中的半導體裝置的製造方法之概略剖視圖。 FIG. 2E is a schematic cross-sectional view showing a method of manufacturing the semiconductor device according to the first embodiment of the present invention.
〔圖2F〕為依序表示本發明的第1實施方式中的半導體裝置的製造方法之概略剖視圖。 FIG. 2F is a schematic cross-sectional view showing a method of manufacturing the semiconductor device according to the first embodiment of the present invention.
〔圖3A〕為說明本發明的第1實施方式中的光學零件與半導體元件之間的間隙的推移之相關圖。 (Fig. 3A) is a correlation diagram for explaining the transition of the gap between the optical component and the semiconductor element in the first embodiment of the present invention.
〔圖3B〕為說明本發明的第1實施方式中的光學零 件與半導體元件之間的間隙的推移之相關圖。 FIG. 3B is an illustration of optical zero in the first embodiment of the present invention. Correlation of the transition of the gap between the component and the semiconductor component.
〔圖4A〕為依序表示本發明的第2實施方式中的半導體裝置的製造方法之概略剖視圖。 FIG. 4A is a schematic cross-sectional view showing a method of manufacturing the semiconductor device according to the second embodiment of the present invention.
〔圖4B〕為在圖4A的狀態下的半導體裝置的俯視圖。 FIG. 4B is a plan view of the semiconductor device in the state of FIG. 4A.
〔圖4C〕為依序表示本發明的第2實施方式中的半導體裝置的製造方法之概略剖視圖。 FIG. 4C is a schematic cross-sectional view showing a method of manufacturing the semiconductor device according to the second embodiment of the present invention.
〔圖4D〕為在圖4C的狀態下的半導體裝置的俯視圖。 FIG. 4D is a plan view of the semiconductor device in the state of FIG. 4C.
〔圖4E〕為依序表示本發明的第2實施方式中的半導體裝置的製造方法之概略剖視圖。 FIG. 4E is a schematic cross-sectional view showing a method of manufacturing the semiconductor device according to the second embodiment of the present invention.
〔圖4F〕為在圖4E的狀態下的半導體裝置的俯視圖。 FIG. 4F is a plan view of the semiconductor device in the state of FIG. 4E.
〔圖5A〕為表示本發明的第3實施方式中的半導體裝置的製造裝置的構成之概略剖視圖。 FIG. 5A is a schematic cross-sectional view showing a configuration of a manufacturing apparatus of a semiconductor device according to a third embodiment of the present invention.
〔圖5B〕為表示本發明的第3實施方式中的半導體裝置的製造裝置的構成之概略剖視圖。 FIG. 5B is a schematic cross-sectional view showing a configuration of a manufacturing apparatus of a semiconductor device according to a third embodiment of the present invention.
〔圖5C〕為本發明的第3實施方式中的半導體裝置之俯視圖。 FIG. 5C is a plan view of the semiconductor device according to the third embodiment of the present invention.
〔圖6〕為表示以往的半導體裝置的安裝方法之概略剖視圖。 FIG. 6 is a schematic cross-sectional view showing a method of mounting a conventional semiconductor device.
〔圖7〕為表示利用以往的半導體裝置的安裝方法所得到的半導體裝置的構造之概略剖視圖。 FIG. 7 is a schematic cross-sectional view showing a structure of a semiconductor device obtained by a mounting method of a conventional semiconductor device.
〔圖8〕為表示以往的接著不良檢測方法之概略剖視 圖。 FIG. 8 is a schematic cross-sectional view showing a conventional method for detecting defective defects. Figure.
以下、有關本發明之實施的型態,一邊參閱圖面一邊說明之。 Hereinafter, the form of the embodiment of the present invention will be described with reference to the drawings.
圖1A及圖1B為表示本發明的第1實施方式中的半導體裝置97的製造裝置的構成之概略剖視圖及半導體裝置97的俯視圖。 1A and 1B are a schematic cross-sectional view showing a configuration of a manufacturing apparatus of a semiconductor device 97 according to a first embodiment of the present invention, and a plan view of the semiconductor device 97.
圖1A所表示的第1實施方式的半導體裝置的製造裝置,具備:平臺7、作為吸附工具之其中一例而發揮功能之安裝頭1、安裝頭部驅動機構90、作為距離測定裝置之其中一例及接著狀態檢查裝置之其中一例而發揮功能之非接觸距離測定機構4、測定機構驅動機構91、位置資訊取得裝置92、以及控制裝置100。 The manufacturing apparatus of the semiconductor device of the first embodiment shown in FIG. 1A includes a stage 7, a mounting head 1 that functions as an example of an adsorption tool, a mounting head driving mechanism 90, and an example of the distance measuring device. Next, the non-contact distance measuring mechanism 4, the measuring mechanism drive mechanism 91, the position information acquisition device 92, and the control device 100 function as one of the state inspection devices.
平臺7固定形成了接合構件13之基板12。 The platform 7 is fixed to form the substrate 12 of the joint member 13.
安裝頭1具備長方體的箱狀形狀的本體1b、透明吸附板2、透明板8、以及真空室3。本體1b在內部形成內部空間。透明吸附板2,係構成本體1b的下端面(底部)且在中央部貫通形成有可以吸附安裝構件11的吸附孔2a。透明板8係於本體1b的內部空間的中間部被固定成與透明吸附板2平行。真空室3係於本體1b的內部空間的下部被透明吸附板2與透明板8與側壁1a圍繞 而形成。真空室3與真空泵5連接,真空室3真空的話,就可以透過吸附孔2a把安裝構件11吸附在透明吸附板2的下表面。 The mounting head 1 includes a box-shaped body 1b having a rectangular parallelepiped shape, a transparent adsorption plate 2, a transparent plate 8, and a vacuum chamber 3. The body 1b forms an internal space inside. The transparent adsorption plate 2 constitutes a lower end surface (bottom portion) of the main body 1b, and an adsorption hole 2a through which the attachment member 11 can be adsorbed is formed in the center portion. The transparent plate 8 is fixed in parallel with the transparent adsorption plate 2 at the intermediate portion of the inner space of the body 1b. The vacuum chamber 3 is attached to the lower portion of the inner space of the body 1b by the transparent adsorption plate 2 and the transparent plate 8 and the side wall 1a. And formed. The vacuum chamber 3 is connected to the vacuum pump 5, and when the vacuum chamber 3 is vacuumed, the mounting member 11 can be adsorbed to the lower surface of the transparent suction plate 2 through the adsorption holes 2a.
安裝頭部驅動機構90,係讓安裝頭1可移動在與托盤9及平臺7的表面(上表面)相對之垂直方向(在圖1A為上下方向)及與垂直方向正交的橫方向(在圖1A為左右方向)。 The head driving mechanism 90 is mounted such that the mounting head 1 can be moved in a vertical direction (upward and downward direction in FIG. 1A) opposite to the surface (upper surface) of the tray 9 and the stage 7, and in a lateral direction orthogonal to the vertical direction (in Fig. 1A is the left and right direction).
安裝構件11,例如利用光學玻璃所構成,例如其折射率為1.63,透光率為96%,尺寸係一邊為0.95~1.05mm之正方形,厚度為380~420μm。而且,基板12乃是例如固態攝像元件等的半導體元件,尺寸係一邊為1.2~1.6mm的正方形,厚度為230~270μm。更進一步,接合構件13乃是例如紫外線硬化接著劑,例如其折射率為1.49,透光率為90%。作為其中一例,如在圖1B以俯視圖所表示,在長方形或是正方形的基板12之上,配置有比基板12小的長方形或是正方形的接合構件13。在接合構件13上,配置有比接合構件13小的長方形或是正方形的安裝構件11。 The mounting member 11 is made of, for example, optical glass, and has, for example, a refractive index of 1.63, a light transmittance of 96%, a square of 0.95 to 1.05 mm on one side, and a thickness of 380 to 420 μm. Further, the substrate 12 is a semiconductor element such as a solid-state image sensor, and has a square shape of 1.2 to 1.6 mm on one side and a thickness of 230 to 270 μm. Further, the joining member 13 is, for example, an ultraviolet curing adhesive, for example, having a refractive index of 1.49 and a light transmittance of 90%. As an example, as shown in a plan view of FIG. 1B, a rectangular or square joint member 13 smaller than the substrate 12 is disposed on the rectangular or square substrate 12. A rectangular or square mounting member 11 that is smaller than the joining member 13 is disposed on the joining member 13.
更進一步,非接觸距離測定機構4,就是安裝頭1的上部,被配置在真空室3的外部且相對於透明板8在上下方向上僅離一定距離之上方的位置,而且,設成在橫方向上可移動。測定機構驅動機構91被配置在安裝頭1,使非接觸距離測定機構4在安裝頭1上移動於相對於托盤9及平臺7而與上下方向正交的橫方向。非接觸距離 測定機構4,係利用測定機構驅動機構91,可以移動在安裝構件11之至少中央部與1個角隅部11a附近位置之間。非接觸距離測定機構4乃是例如光譜干涉(spectral interference)方式鐳射位移計(laser displacement meter),係以發出鐳射光6,透過透明的安裝構件11與接合構件13後,檢測在基板12的表面所反射的光,來進行分析的方式,可以測定安裝構件11與基板12之間的距離G。光譜干涉方式鐳射位移計係以對在鐳射光6所行進的物質的各界面之反射光的干涉光進行光譜分析的方式換算成距離的緣故,可以用至少1台的光譜干涉方式鐳射位移計測定距離G。在非接觸距離測定機構4的測定結果被輸出到控制裝置100,以控制裝置100判定接合狀態是否良好。 Further, the non-contact distance measuring mechanism 4 is an upper portion of the mounting head 1 and is disposed outside the vacuum chamber 3 and at a position separated from the transparent plate 8 by a predetermined distance in the vertical direction, and is disposed in the horizontal direction. It can be moved in the direction. The measurement mechanism drive mechanism 91 is disposed in the mounting head 1 and moves the non-contact distance measuring mechanism 4 on the mounting head 1 in a lateral direction orthogonal to the vertical direction with respect to the tray 9 and the stage 7. Non-contact distance The measuring mechanism 4 is movable between at least a central portion of the mounting member 11 and a position near one corner portion 11a by the measuring mechanism driving mechanism 91. The non-contact distance measuring mechanism 4 is, for example, a spectral interference type laser displacement meter that emits laser light 6 and transmits the transparent mounting member 11 and the bonding member 13 to detect the surface of the substrate 12. The distance G between the mounting member 11 and the substrate 12 can be measured by the reflected light. The spectral interference type laser displacement meter can be converted into a distance by performing spectral analysis on the interference light of the reflected light at each interface of the substance traveling by the laser light 6, and can be measured by at least one spectral interference type laser displacement meter. Distance G. The measurement result of the non-contact distance measuring means 4 is output to the control device 100, and the control device 100 determines whether or not the engaged state is good.
位置資訊取得裝置92係以測定裝置、以及演算由測定裝置所測定出的資料之演算部44所構成。作為測定裝置之其中一例的辨識攝影機14,係相對地被配置在安裝構件11的下方。所謂相對地被配置在安裝構件11的下方,例如,係意味著可以利用安裝頭部驅動機構90使安裝頭1移動在橫方向,一直移動到辨識攝影機14的上方的位置為止,或是,可以先使安裝頭1靜止,再使辨識攝影機14移動在橫方向一直到安裝頭1的下方的位置為止。利用辨識攝影機14辨識被吸附在安裝頭1的安裝構件11,根據辨識結果,用演算部44算出與安裝頭1相對之安裝構件11的位置偏移。把算出的位置偏移的資 訊,作為位置資訊輸出到控制裝置100。控制裝置100,係根據位置資訊,驅動控制安裝頭部驅動機構90,可以進行被吸附在安裝頭1的安裝構件11與基板12之對位。 The position information acquisition device 92 is composed of a measurement device and an arithmetic unit 44 that calculates data measured by the measurement device. The identification camera 14 as an example of the measuring device is disposed opposite to the mounting member 11 in the opposite direction. The arrangement is relatively disposed below the mounting member 11, for example, it means that the mounting head 1 can be moved in the lateral direction by the mounting head driving mechanism 90, and moved to the position above the identification camera 14, or First, the mounting head 1 is stopped, and the identification camera 14 is moved in the lateral direction up to the position below the mounting head 1. The identification member 14 that has been attached to the mounting head 1 is recognized by the identification camera 14, and based on the identification result, the calculation unit 44 calculates the positional deviation of the mounting member 11 facing the mounting head 1. Offset the calculated position The message is output to the control device 100 as location information. The control device 100 drives and controls the mounting head driving mechanism 90 based on the position information, and can position the mounting member 11 adsorbed on the mounting head 1 and the substrate 12.
控制裝置100輸入有:以位置資訊取得裝置92所取得的位置資訊、以及以非接觸距離測定機構4所測定出的測定值。接著,根據被輸入的資訊與預先記憶的製造工程的資訊,分別獨立控制安裝頭部驅動機構90的驅動、測定機構驅動機構91的驅動、位置資訊取得裝置92的驅動、非接觸距離測定機構4的驅動、真空泵5的驅動(或是設在真空泵5與真空室3之間的控制閥的開閉動作)之各個的動作。尚且,控制裝置100與各裝置等之連接關係,係在一部分的圖面,因圖面的簡樸化的緣故,省略圖示。 The control device 100 inputs the position information acquired by the position information acquisition device 92 and the measurement value measured by the non-contact distance measuring unit 4. Then, based on the input information and the information of the manufacturing engineering stored in advance, the driving of the mounting head driving mechanism 90, the driving of the measuring mechanism driving mechanism 91, the driving of the position information acquiring device 92, and the non-contact distance measuring mechanism 4 are independently controlled. The drive and the operation of the vacuum pump 5 (or the opening and closing operation of the control valve provided between the vacuum pump 5 and the vacuum chamber 3). In addition, the connection relationship between the control device 100 and each device is a part of the drawing, and the illustration is omitted because of the simplicity of the drawing.
圖2A~圖2F為依序表示本發明的第1實施方式中的半導體裝置的製造方法之概略剖視圖。以下的製造方法的製程,係全部在控制裝置100的控制下進行。 2A to 2F are schematic cross-sectional views showing a method of manufacturing the semiconductor device according to the first embodiment of the present invention. The processes of the following manufacturing methods are all performed under the control of the control device 100.
首先,在控制裝置100的控制下,如圖2A所表示,利用安裝頭部驅動機構90移動安裝頭1到與被搭載在托盤9上的安裝構件11相對向的位置之上方後,利用安裝頭部驅動機構90使安裝頭1下降接近到安裝構件11。 First, under the control of the control device 100, as shown in FIG. 2A, after the mounting head 1 is moved by the mounting head driving mechanism 90 to a position opposed to the mounting member 11 mounted on the tray 9, the mounting head is used. The portion drive mechanism 90 lowers the mounting head 1 to the mounting member 11.
接著,在控制裝置100的控制下,如圖2B所表示,安裝構件11經由因真空泵5的驅動所致之真空吸附動作,被吸附固定到安裝頭1的透明吸附板2。尚且, 在進行真空吸附動作之際,在安裝構件11與透明吸附板2之間有空隙的情況下,藉由負壓被吸引浮在空中的安裝構件11,因周圍的氣流的流動或是安裝構件11之在空中的傾斜角度導致搖晃,在吸附孔2a的中心座標與安裝構件11的中心座標之間產生位置偏離。 Next, under the control of the control device 100, as shown in FIG. 2B, the mounting member 11 is suction-fixed to the transparent suction plate 2 of the mounting head 1 via a vacuum suction operation by the driving of the vacuum pump 5. Still, When a vacuum suction operation is performed, when there is a gap between the mounting member 11 and the transparent suction plate 2, the mounting member 11 that is floated in the air is sucked by the negative pressure, or the surrounding air flow or the mounting member 11 The inclination angle in the air causes shaking, and a positional deviation occurs between the center coordinates of the adsorption hole 2a and the center coordinates of the mounting member 11.
接著,在控制裝置100的控制下,用安裝頭1真空吸附住安裝構件11後,利用安裝頭部驅動機構90使安裝頭1移動到上方後,把辨識攝影機14相對地配置在安裝構件11的下方。例如,利用安裝頭部驅動機構90把安裝頭1移動在橫方向,使其一直移動到辨識攝影機14的上方的位置為止。或是,先使安裝頭1靜止,使辨識攝影機14移動在橫方向一直到安裝頭1的下方的位置為止。 Next, under the control of the control device 100, after the mounting member 11 is vacuum-adsorbed by the mounting head 1, the mounting head 1 is moved upward by the mounting head driving mechanism 90, and the identification camera 14 is disposed opposite to the mounting member 11 Below. For example, the mounting head 1 is moved in the lateral direction by the mounting head driving mechanism 90 so as to move until the position above the recognition camera 14 is moved. Alternatively, the mounting head 1 is first brought to a standstill so that the identification camera 14 is moved in the lateral direction up to the position below the mounting head 1.
接下來,在控制裝置100的控制下,利用辨識攝影機14,測定安裝構件11的平面方向的位置(安裝構件11之與上下方向正交的平面內的位置),用演算部44算出與透明吸附板2的吸附孔2a的中心相對之安裝構件11的中心座標的相對座標,亦即位置偏離量。例如,經由在基於辨識攝影機14的辨識及辨識結果之演算部44的演算從吸附孔2a的外周圍部3點的座標求出中心座標後,用辨識攝影機14測定出與安裝構件11的中心相對具有點對稱的2頂點的位置,用演算部44求出安裝構件11的中心座標,以演算部44把從安裝構件11的中心座標減掉吸附孔2a的中心座標後的座標作為相對座標者為佳。 用演算部44算出的相對座標,係作為位置資訊,從演算部44被輸出到控制裝置100。 Next, under the control of the control device 100, the position of the mounting member 11 in the planar direction (the position in the plane perpendicular to the vertical direction of the mounting member 11) is measured by the identification camera 14, and is calculated by the calculation unit 44 and transparently adsorbed. The relative coordinates of the center of the adsorption hole 2a of the plate 2 with respect to the center coordinate of the mounting member 11, that is, the positional deviation amount. For example, the center coordinates are obtained from the coordinates of three points on the outer peripheral portion of the adsorption hole 2a by the calculation of the calculation unit 44 based on the identification and identification result of the identification camera 14, and then the identification camera 14 measures the center of the mounting member 11. The position of the two vertices having the point symmetry is obtained by the calculation unit 44, and the coordinate unit 44 subtracts the coordinates of the center coordinates of the adsorption hole 2a from the center coordinates of the attachment member 11 as the relative coordinates. good. The relative coordinates calculated by the calculation unit 44 are output from the calculation unit 44 to the control device 100 as position information.
更進一步,在控制裝置100的控制下,如圖2C所表示,在平臺7上搭載基板12後,利用未圖示辨識攝影機測定設在基板12的辨識標記(未圖示)的平面方向的座標,以該座標為基準利用接合構件供給裝置(未圖示)供給接合構件13到基板12上的指定的位置。作為利用接合構件供給裝置達成之接合構件13的供給方法,例如,利用分配器、網印記、或是轉寫而被供給。之後,在控制裝置100的控制下,根據被輸入到控制裝置100的位置資訊,利用安裝頭部驅動機構90,使安裝頭1移動在平面方向,使得基板12之指定的位置亦即被設在基板12之2處的辨識標記(未圖示)的中心座標、與安裝構件11的中心座標一致。之後,在控制裝置100的控制下,根據從演算部44作為位置資訊被輸入到控制裝置100的相對座標,利用安裝頭部驅動機構90,讓吸附了安裝構件11的安裝頭1接近到基板12。亦即,如圖2D所表示,在控制裝置100的控制下,利用安裝頭部驅動機構90,使安裝構件11接近到基板12,使得接合構件13與安裝構件11緊接。在該接近狀態下,在控制裝置100的控制下,利用非接觸距離測定機構4,測定安裝構件11與基板12之間的距離G。利用非接觸距離測定機構4測定出的測定值,係輸出到控制裝置100,被使用在距離G的控制及接合狀態之是否良好的判定。亦即,例如,以安 裝構件11的中心部測定安裝構件11與基板12之間的距離G,以測定值為基準,控制裝置100,係透過安裝頭部驅動機構90控制安裝頭1的下降量。亦即,在控制裝置100的控制下,利用安裝頭部驅動機構90,使安裝頭1接近到基板12,使得由非接觸距離測定機構4測定出的測定值成為期望的值。安裝頭1接近到基板12的同時,接合構件13係在安裝構件11與基板12之間被壓潰,朝向安裝構件11的周緣沿著安裝構件11的表面浸濕擴展。在此,非接觸距離測定機構4,係難以受到安裝構件11的基板12的斜率的影響,利用測定機構驅動機構91使非接觸距離測定機構4移動,使得以被配置到吸附孔2a或是安裝構件11的中心位置是最理想的。從非接觸距離測定機構4發出的鐳射光6,係透過透明的安裝構件11與接合構件13後,檢測在基板12的表面所反射的光,來進行分析的方式,可以直接測定安裝構件11與基板12之間的距離。尚且,在使用環境下為了防止在安裝構件11與接合構件13之間的剝離及破壞的發生,安裝構件11與接合構件13之間的界面,係有必要確保充分的接著強度。為此,接合構件13,係理想上浸濕擴展成與安裝構件11的下表面整個面緊接,如圖1B所表示,接合構件13溢出到比安裝構件11的緣更外側的話,尚且可以。 Further, under the control of the control device 100, as shown in FIG. 2C, after the substrate 12 is mounted on the stage 7, the coordinates in the plane direction of the identification mark (not shown) provided on the substrate 12 are measured by an identification camera (not shown). The bonding member supply device (not shown) supplies the bonding member 13 to a predetermined position on the substrate 12 with reference to the coordinates. The supply method of the joint member 13 by the joint member supply means is supplied, for example, by a dispenser, a screen mark, or a transfer. Thereafter, under the control of the control device 100, the mounting head 1 is moved in the planar direction by the mounting head driving mechanism 90 based on the position information input to the control device 100, so that the designated position of the substrate 12 is set. The center coordinates of the identification marks (not shown) at the two points of the substrate 12 coincide with the center coordinates of the mounting member 11. Thereafter, under the control of the control device 100, the mounting head 1 to which the mounting member 11 is attracted is brought close to the substrate 12 by the mounting head driving mechanism 90 based on the relative coordinates input from the calculating unit 44 as position information to the control device 100. . That is, as shown in FIG. 2D, under the control of the control device 100, the mounting member 11 is brought close to the substrate 12 by the mounting head driving mechanism 90 so that the engaging member 13 is in close contact with the mounting member 11. In this approach state, the distance G between the mounting member 11 and the substrate 12 is measured by the non-contact distance measuring mechanism 4 under the control of the control device 100. The measured value measured by the non-contact distance measuring means 4 is output to the control device 100, and is used to determine whether the distance G is controlled or not. That is, for example, The center portion of the mounting member 11 measures the distance G between the mounting member 11 and the substrate 12, and the control device 100 controls the amount of lowering of the mounting head 1 through the mounting head driving mechanism 90 based on the measured value. That is, under the control of the control device 100, the mounting head 1 is brought close to the substrate 12 by the mounting head driving mechanism 90, so that the measured value measured by the non-contact distance measuring means 4 becomes a desired value. While the mounting head 1 is approaching the substrate 12, the joint member 13 is crushed between the mounting member 11 and the substrate 12, and is wetted and spread toward the periphery of the mounting member 11 along the surface of the mounting member 11. Here, the non-contact distance measuring mechanism 4 is less likely to be affected by the slope of the substrate 12 of the mounting member 11, and the non-contact distance measuring mechanism 4 is moved by the measuring mechanism drive mechanism 91 so as to be placed in the adsorption hole 2a or mounted. The center position of the member 11 is optimal. The laser light 6 emitted from the non-contact distance measuring means 4 passes through the transparent mounting member 11 and the bonding member 13, detects the light reflected on the surface of the substrate 12, and analyzes the mounting member 11 and directly. The distance between the substrates 12. Further, in order to prevent the occurrence of peeling and breakage between the mounting member 11 and the joining member 13 in the use environment, it is necessary to secure a sufficient bonding strength at the interface between the mounting member 11 and the joining member 13. For this reason, the joint member 13 is desirably wetted so as to be in close contact with the entire lower surface of the mounting member 11, as shown in Fig. 1B, and the joint member 13 may overflow beyond the edge of the mounting member 11, and may be.
接著,在控制裝置100的控制下,如圖2E所表示,保持指定的間隙,利用安裝頭部驅動機構90使非接觸距離測定機構4從安裝構件11的中心位置移動到角 隅部11a附近位置。接著,對角隅部11a附近位置發出鐳射光6,檢查在角隅部11a附近位置的接著狀態,把檢查結果從非接觸距離測定機構4輸出到控制裝置100,用控制裝置100判定接著狀態是否良好。接合構件13,係於安裝構件11接觸在中心部後從中心部擴展在同心圓上的緣故,如圖1B所表示,至少對位在矩形的安裝構件11之2個交叉的對角線11b上之角隅部11a附近位置做1點測定者為佳。 Next, under the control of the control device 100, as shown in FIG. 2E, the designated gap is maintained, and the non-contact distance measuring mechanism 4 is moved from the center position of the mounting member 11 to the corner by the mounting head driving mechanism 90. The position near the crotch 11a. Then, the laser light 6 is emitted at a position near the corner portion 11a, and the state in the vicinity of the corner portion 11a is inspected, and the inspection result is output from the non-contact distance measuring unit 4 to the control device 100, and the control device 100 determines whether or not the state is next. good. The engaging member 13 is attached to the concentric circle from the central portion after the mounting member 11 contacts the center portion, as shown in Fig. 1B, at least aligned on the two intersecting diagonals 11b of the rectangular mounting member 11. It is preferable that the position near the corner portion 11a is one point measurement.
而且,在接著狀態為合格品的情況下,保持該指定的間隙,從紫外線照射裝置之類的硬化裝置98照射出紫外線,使接合構件13硬化。尚且,硬化製程在接著檢查製程的前後皆可。 Further, when the subsequent state is a good product, the predetermined gap is maintained, and ultraviolet rays are irradiated from the curing device 98 such as an ultraviolet irradiation device to cure the bonding member 13. Also, the hardening process can be performed before and after the inspection process.
最後,在控制裝置100的控制下,如圖2F所表示,停止真空吸附動作,讓安裝頭1從安裝構件11離開,完成半導體裝置97。 Finally, under the control of the control device 100, as shown in FIG. 2F, the vacuum suction operation is stopped, and the mounting head 1 is separated from the mounting member 11 to complete the semiconductor device 97.
接著,說明有關使用了非接觸距離測定機構4的接著狀態的檢查方法。圖3A及圖3B為說明本發明的第1實施方式中的光學零件與半導體元件之間的間隙(距離)G的推移之相關圖。如圖3A所表示,於使用光譜干涉方式鐳射位移計在非接觸距離測定機構4的情況下,以間隙G與光量之關係可以輸出檢測波形到控制裝置100。在毫無間隙地填充接合構件13到被照射鐳射光6的位置的情況下,光穿透過物質中的光路徑長度,係成為把折射率乘上空氣中的光路徑長度之長度的緣故,分別對安裝構 件11的厚度及接合構件13乘上各個的折射率的值是作為間隙G被輸出到控制裝置100。 Next, an inspection method using the following state of the non-contact distance measuring mechanism 4 will be described. 3A and 3B are diagrams for explaining the transition of the gap (distance) G between the optical component and the semiconductor element in the first embodiment of the present invention. As shown in FIG. 3A, in the case of using the spectral interference type laser displacement meter in the non-contact distance measuring mechanism 4, the detection waveform can be output to the control device 100 in accordance with the relationship between the gap G and the amount of light. When the bonding member 13 is filled to the position where the laser light 6 is irradiated without any gap, the length of the light path that the light penetrates through the material is caused by multiplying the refractive index by the length of the optical path length in the air, respectively. Installation structure The thickness of the member 11 and the value of the refractive index of the bonding member 13 multiplied by each are output to the control device 100 as the gap G.
如圖3A所表示,安裝構件11的厚度g1,係作為具有光量波峰p1的波形而被輸出。另一方面,安裝構件11與基板12接近,安裝構件11與接合構件13緊接時之安裝構件11與基板12之間的間隙G,亦即接合構件13的厚度g20,係作為具有光量波峰p2的波形從非接觸距離測定機構4被輸出。之後,安裝構件11與基板12更進一步接近,隨著接合構件13被壓潰在安裝構件11與基板12之間,具有光量波峰p2的波形的間隙的值往減少方向移動,直至期望的間隙g21。在此,光量波峰係隨著光所透過的構件的透過率增減。例如,在透光率依空氣、安裝構件11、接合構件13的順序為大的情況下,光量波峰也依該順序變大。而且,在接合構件13沒有被填充到安裝構件11與基板12的間隙而存在有空氣的情況下,期望的間隙g21中的波形的峰值,係作為比被填充有接合構件的情況下的光量波峰p2大的值的光量波峰p22而被輸出。 As shown in FIG. 3A, the thickness g1 of the mounting member 11 is output as a waveform having a light amount peak p1. On the other hand, the mounting member 11 is close to the substrate 12, and the gap G between the mounting member 11 and the substrate 12 when the mounting member 11 and the bonding member 13 are in close contact with each other, that is, the thickness g20 of the bonding member 13 is taken as having a light amount peak p2 The waveform is output from the non-contact distance measuring mechanism 4. Thereafter, the mounting member 11 is further brought closer to the substrate 12, and as the bonding member 13 is crushed between the mounting member 11 and the substrate 12, the value of the gap having the waveform of the light amount peak p2 is moved in the decreasing direction until the desired gap g21 . Here, the light amount peak is increased or decreased as the transmittance of the member through which the light passes. For example, when the light transmittance is large depending on the order of the air, the attachment member 11, and the joint member 13, the light amount peaks also become larger in this order. Further, in the case where the joint member 13 is not filled with the gap between the mounting member 11 and the substrate 12 and air is present, the peak value of the waveform in the desired gap g21 is the peak of the light amount in the case where the joint member is filled. The light amount peak p22 of p2 large value is output.
為此,經由先預先測定接合構件13被填充到安裝構件11與基板12的間隙之情況(合格品的情況)的光量波峰p2的方式,若在指定的間隙的光量超過p2的話,則可以用控制裝置100判定為接合構件13沒有被填充到安裝構件11與基板12的間隙的狀態,亦即接合不良。 Therefore, the amount of light peak p2 of the case where the bonding member 13 is filled in the gap between the mounting member 11 and the substrate 12 (in the case of a good product) is measured in advance, and if the amount of light in the specified gap exceeds p2, it is possible to use The control device 100 determines that the joint member 13 is not filled in the gap between the mounting member 11 and the substrate 12, that is, the joint failure.
尚且,所輸出的安裝構件11的厚度g1,乃是對實際的安裝構件11的厚度乘上安裝構件11的折射率之值,接合構件13的厚度g20、g21為對實際的接合構件13的厚度乘上接合構件13的折射率之值。 Further, the thickness g1 of the mounted mounting member 11 is a value obtained by multiplying the thickness of the actual mounting member 11 by the refractive index of the mounting member 11, and the thicknesses g20, g21 of the joining member 13 are the thicknesses of the actual joining member 13. The value of the refractive index of the joint member 13 is multiplied.
使用圖3B,說明有關接合狀態是否良好檢查的製程。首先,時間t0中,安裝構件11與接合構件13相接觸,間隙被檢測作為g20。隨安裝構件11接近到接合構件13間隙變小,時間t1中到了期望的間隙g21後,一直保持到時間t2為止。在該時間t1與時間t2之間,把非接觸距離測定機構4移動到安裝構件11的角隅部11a附近位置,照射鐳射光6到角隅部11a附近位置,測定在角隅部11a附近位置的光量及間隙。經由該檢查製程,在用控制裝置100判定出角隅部11a附近位置中接合構件13被填充到安裝構件11與基板12的間隙之情況下,照射紫外線或是熱能量使接合構件13硬化,但在用控制裝置100判定出沒有填充之情況下,作為不合格品進行分類。經由該製程,可以抑制後製程不良流出,可以高精度地確保安裝構件11與基板12之間隙。 A process for checking whether the joint state is good or not will be described using FIG. 3B. First, at time t0, the mounting member 11 is in contact with the joint member 13, and the gap is detected as g20. As the mounting member 11 approaches the gap of the engaging member 13, the gap becomes small, and after the desired gap g21 is reached in time t1, it is maintained until time t2. Between the time t1 and the time t2, the non-contact distance measuring mechanism 4 is moved to a position near the corner portion 11a of the mounting member 11, and the laser light 6 is irradiated to a position near the corner portion 11a, and the position near the corner portion 11a is measured. The amount of light and the gap. Through the inspection process, when the control device 100 determines that the bonding member 13 is filled in the gap between the mounting member 11 and the substrate 12 in the vicinity of the corner portion 11a, the bonding member 13 is cured by irradiation of ultraviolet rays or heat energy, but When it is determined by the control device 100 that there is no filling, the classification is performed as a defective product. Through this process, it is possible to suppress the poor outflow of the post process, and it is possible to ensure the gap between the mounting member 11 and the substrate 12 with high precision.
經由第1實施方式中的製造方法,使用上述的構件製作半導體裝置。安裝構件11與基板12之間的間隙設定成15μm,亦即g21=22.4μm,使用上述的方法進行製作。接合構件13的檢查,係位在安裝構件11的對角線11b上,利用直徑50μm的鐳射光6測定分別離垂直交叉的2個邊150μm遠的位置之1點。在安裝構件11的吸附 孔2a的直徑為500μm,且最大吸附位置偏離量為±200μm的情況下,確認了即便接合構件13相對於吸附孔2a的中心有位置偏移的話,也可以用控制裝置100檢查接合狀態判定是否良好。而且,安裝構件11與基板12之間的接合間隙G為15±2μm。 According to the manufacturing method of the first embodiment, a semiconductor device is fabricated using the above-described members. The gap between the mounting member 11 and the substrate 12 was set to 15 μm, that is, g21 = 22.4 μm, and was produced by the above method. The inspection of the joining member 13 was carried out on the diagonal 11b of the mounting member 11, and the laser light 6 having a diameter of 50 μm was used to measure one point apart from the two sides perpendicular to each other by 150 μm. Adsorption in the mounting member 11 When the diameter of the hole 2a is 500 μm and the maximum adsorption position deviation amount is ±200 μm, it is confirmed that even if the joint member 13 is displaced from the center of the adsorption hole 2a, the control device 100 can check whether the joint state is determined or not. good. Moreover, the joint gap G between the mounting member 11 and the substrate 12 is 15 ± 2 μm.
以上,根據第1實施方式,在安裝構件11的貼附製程內,可以抑制朝後製程的不良流出,可以高精度確保安裝構件11與基板12之間隙。 As described above, according to the first embodiment, in the attaching process of the mounting member 11, it is possible to suppress the poor outflow of the backward process, and it is possible to ensure the gap between the mounting member 11 and the substrate 12 with high precision.
本發明之第2實施方式,係使用比第1實施方式的安裝構件11還小的安裝構件31,固定作為距離測定裝置之其中一例及作為接著狀態檢查裝置之其中一例而發揮功能的非接觸距離測定機構24的非接觸距離測定部24a且移動鏡片這一點、以及檢查製程中的鐳射光26的測定處有2點這一點,與第1實施方式相異。 In the second embodiment of the present invention, the mounting member 31 that is smaller than the mounting member 11 of the first embodiment is used, and a non-contact distance that functions as an example of the distance measuring device and one of the following state detecting devices is fixed. The non-contact distance measuring unit 24a of the measuring mechanism 24 is different from the first embodiment in that the lens is moved and the measurement of the laser light 26 in the inspection process is two.
圖4A~圖4F,係分別為依序表示本發明的第2實施方式中的半導體裝置的製造方法之概略剖視圖及半導體裝置之俯視圖。 4A to 4F are a schematic cross-sectional view showing a method of manufacturing a semiconductor device according to a second embodiment of the present invention, and a plan view of the semiconductor device, respectively.
說明在圖4A及圖4B所表示之有關第2實施方式的半導體裝置的製造裝置的構成。第2實施方式的半導體裝置的製造裝置,具備:平臺27、作為吸附工具之其中一例而發揮功能的安裝頭21、安裝頭部驅動機構90、作為距離測定裝置之其中一例而發揮功能的非接觸距 離測定機構24、測定機構驅動機構91、位置資訊取得裝置92、以及控制裝置100。 The configuration of the manufacturing apparatus of the semiconductor device according to the second embodiment shown in FIGS. 4A and 4B will be described. The manufacturing apparatus of the semiconductor device of the second embodiment includes a stage 27, a mounting head 21 that functions as an example of an adsorption tool, a mounting head driving mechanism 90, and a non-contact function that functions as an example of the distance measuring device. distance The measurement mechanism 24, the measurement mechanism drive mechanism 91, the position information acquisition device 92, and the control device 100 are provided.
尚且,有關第2實施方式中,與第1實施方式相同的構成,係賦與相同的元件符號,省略說明。 In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
平臺27,係與第1實施方式的平臺7對應,固定形成有接合構件33的基板32。 The stage 27 corresponds to the stage 7 of the first embodiment, and the substrate 32 on which the joint member 33 is formed is fixed.
安裝頭21對應到第1實施方式的安裝頭1,但形狀及構成相異。亦即,安裝頭21具備:具有可以吸附安裝構件31的吸附孔22a之透明吸附板22、透明板28、側壁21a、以及真空室3。透明吸附板22構成矩形筒形形狀的側壁21a的下端面(底部)且在中央部貫通形成有可以吸附安裝構件11的吸附孔2a。透明板8係於側壁21a的上端被固定成與透明吸附板22平行。藉此,真空室23係被透明吸附板22與透明板28與側壁21a圍繞而形成。真空室23與真空泵5連接,真空室3真空的話,就可以透過吸附孔22a把安裝構件31吸附在透明吸附板22的下表面。 The mounting head 21 corresponds to the mounting head 1 of the first embodiment, but has a different shape and configuration. That is, the mounting head 21 includes a transparent suction plate 22 having a suction hole 22a capable of adsorbing the attachment member 31, a transparent plate 28, a side wall 21a, and a vacuum chamber 3. The transparent adsorption plate 22 constitutes a lower end surface (bottom portion) of the side wall 21a of the rectangular cylindrical shape, and an adsorption hole 2a through which the attachment member 11 can be adsorbed is formed in the center portion. The transparent plate 8 is fixed to the upper end of the side wall 21a so as to be parallel to the transparent adsorption plate 22. Thereby, the vacuum chamber 23 is formed by the transparent adsorption plate 22 and the transparent plate 28 and the side wall 21a. The vacuum chamber 23 is connected to the vacuum pump 5, and when the vacuum chamber 3 is vacuumed, the mounting member 31 can be attracted to the lower surface of the transparent suction plate 22 through the adsorption hole 22a.
安裝頭部驅動機構90,係與第1實施方式同樣,讓安裝頭21可移動在與平臺27的平面相對之垂直方向(在圖4A為上下方向)及與垂直方向正交的橫方向(在圖4A為左右方向)。 The head driving mechanism 90 is attached, and the mounting head 21 can be moved in a vertical direction (upward and downward direction in FIG. 4A) and a horizontal direction orthogonal to the vertical direction (in the vertical direction in FIG. 4A) as in the first embodiment. Fig. 4A is the left and right direction).
安裝構件31,例如利用光學玻璃所構成,例如其折射率為1.51,透光率為98%,尺寸係一邊為0.45~0.55mm之正方形,厚度為380~420μm。而且,基板 32乃是例如固態攝像元件等的半導體元件,尺寸為0.7mm×1.0mm、厚度280~320μm。更進一步,接合構件33乃是例如紫外線硬化接著劑,例如其折射率為1.49,透光率為90%。 The mounting member 31 is made of, for example, optical glass, and has a refractive index of 1.51, a light transmittance of 98%, a square of 0.45 to 0.55 mm on one side, and a thickness of 380 to 420 μm. Moreover, the substrate 32 is a semiconductor element such as a solid-state image sensor, and has a size of 0.7 mm × 1.0 mm and a thickness of 280 to 320 μm. Further, the bonding member 33 is, for example, an ultraviolet curing adhesive, for example, having a refractive index of 1.49 and a light transmittance of 90%.
更進一步,非接觸距離測定機構24係構成如下。固定非接觸距離測定部24a成鄰接到真空室23的外部之其中一側面21c。在從該非接觸距離測定部24a朝上下方向的下方輸出的鐳射光26的光軸上,設置相對於非接觸距離測定部24a具有45°的斜率之固定鏡片34a。而且,在與固定鏡片34a為相同的高度且相對於透明板28在上下方向隔一定的距離的位置,設有反射角45°的驅動鏡片34b。驅動鏡片34b,係利用驅動鏡片驅動機構95,在來自固定鏡片34a的橫方向的光軸上可以移動於橫方向。非接觸距離測定部24a乃是例如光譜干涉方式鐳射位移計,利用透過固定鏡片34a與驅動鏡片34b而反射的鐳射光26,可以測定安裝構件31與基板32之間的距離G。 Further, the non-contact distance measuring mechanism 24 is configured as follows. The fixed non-contact distance measuring portion 24a is adjacent to one of the side faces 21c of the outside of the vacuum chamber 23. A fixed lens 34a having a slope of 45° with respect to the non-contact distance measuring unit 24a is provided on the optical axis of the laser light 26 outputted downward from the non-contact distance measuring unit 24a in the vertical direction. Further, a drive lens 34b having a reflection angle of 45 is provided at a position equal to the height of the fixed lens 34a and at a constant distance from the transparent plate 28 in the vertical direction. The driving lens 34b is movable in the lateral direction by the driving lens driving mechanism 95 on the optical axis in the lateral direction from the fixed lens 34a. The non-contact distance measuring unit 24a is, for example, a spectral interference type laser displacement meter, and the distance G between the mounting member 31 and the substrate 32 can be measured by the laser light 26 reflected by the fixed lens 34a and the driving lens 34b.
控制裝置100,係被輸入有以位置資訊取得裝置92所取得的位置資訊、以及以非接觸距離測定機構24所測定的測定值,根據已被輸入的資訊,分別獨立控制安裝頭部驅動機構90的驅動、測定機構驅動機構91的驅動、位置資訊取得裝置92的驅動、驅動鏡片驅動機構95的驅動、真空泵5的驅動(或是設在真空泵5與真空室23之間的控制閥的開閉動作)之各個的動作。 The control device 100 is input with the position information acquired by the position information acquiring device 92 and the measured value measured by the non-contact distance measuring unit 24, and independently controls the mounting head driving mechanism 90 based on the input information. Driving, driving of the measuring mechanism drive mechanism 91, driving of the position information acquiring device 92, driving of the driving lens driving mechanism 95, driving of the vacuum pump 5 (or opening and closing of a control valve provided between the vacuum pump 5 and the vacuum chamber 23) ) the action of each.
接著,敘述有關第2實施方式中的半導體裝 置之製造方法。以下的製造方法的製程,亦全部在控制裝置100的控制下進行。 Next, the semiconductor package in the second embodiment will be described. The manufacturing method. The processes of the following manufacturing methods are also all performed under the control of the control device 100.
首先,在控制裝置100的控制下,與第1實施方式同樣,利用安裝頭部驅動機構90移動控制安裝頭21,利用真空吸附用安裝頭21吸附固定被搭載在未圖示托盤上的安裝構件31。 First, in the same manner as the first embodiment, the mounting head 21 is moved by the mounting head driving mechanism 90, and the vacuum suction mounting head 21 is used to attach and attach the mounting member mounted on the tray (not shown). 31.
之後,在控制裝置100的控制下,利用辨識攝影機14(參閱第1實施方式)測定安裝構件31的平面方向(安裝頭21之與上下方向正交的平面內的位置)的吸附位置,用演算部44算出與透明吸附板22的吸附孔22a的中心相對之安裝構件31的中心座標的相對座標,亦即位置偏離量。 After that, under the control of the control device 100, the identification position of the mounting member 31 (the position in the plane perpendicular to the vertical direction of the mounting head 21) is measured by the identification camera 14 (see the first embodiment), and the calculation is performed. The portion 44 calculates the relative coordinates of the center coordinates of the mounting member 31 opposed to the center of the adsorption hole 22a of the transparent adsorption plate 22, that is, the positional deviation amount.
接著,在控制裝置100的控制下,利用安裝頭部驅動機構90,平面移動安裝頭21使得被固定在安裝頭21的安裝構件31與基板32對向後,使安裝頭21下降使得以接近到基板32。如圖4A及圖4B所表示,接合構件33與安裝構件31緊接時,在控制裝置100的控制下,利用非接觸距離測定機構24,測定安裝構件31與基板32之間的距離G。以非接觸距離測定機構24所測定出的測定值,係從非接觸距離測定機構24輸出到控制裝置100,被使用在距離G的控制。亦即,例如,以安裝構件31的中心部測定安裝構件31與基板32之間的距離G,以測定值為基準,控制裝置100,係透過安裝頭部驅動機構90控制安裝頭21的下降量。亦即,在控制裝置100的控 制下,利用安裝頭部驅動機構90,使安裝頭21接近到基板32,使得由非接觸距離測定機構24測定出的測定值成為期望的值。這麼一來,接合構件33被壓潰在安裝構件31與基板32之間,朝向安裝構件31的周緣沿著安裝構件31的表面浸濕廣展。在此,從非接觸距離測定部24a發出的鐳射光26,係在固定鏡片34a以及位置在中央部的驅動鏡片34b反射後,依序透過透明板28與吸附孔22a與安裝構件31,在基板32的表面反射,以與其相反的順序返回到非接觸距離測定部24a,而可以直接測定安裝構件31與基板32之間的距離G。尚且,驅動鏡片34b的橫方向的位置,可以在鐳射光26通過吸附孔22a的內側之中央部的位置。鐳射光26在碰到吸附孔22a的外周圍部的情況、或是於吸附時產生位置偏移而碰到安裝構件31的周緣部的情況下,因為亂反射,距離G的測定精密度下降。 Next, under the control of the control device 100, the mounting head 21 is moved by the mounting head driving mechanism 90 so that the mounting member 31 fixed to the mounting head 21 faces the substrate 32, and the mounting head 21 is lowered to approach the substrate. 32. As shown in FIG. 4A and FIG. 4B, when the joining member 33 is in contact with the mounting member 31, the distance G between the mounting member 31 and the substrate 32 is measured by the non-contact distance measuring mechanism 24 under the control of the control device 100. The measured value measured by the non-contact distance measuring means 24 is output from the non-contact distance measuring means 24 to the control device 100, and is used for the control of the distance G. That is, for example, the distance G between the mounting member 31 and the substrate 32 is measured at the center of the mounting member 31, and the control device 100 controls the amount of lowering of the mounting head 21 by the mounting head driving mechanism 90 based on the measured value. . That is, the control of the control device 100 By the mounting head driving mechanism 90, the mounting head 21 is brought close to the substrate 32, so that the measured value measured by the non-contact distance measuring means 24 becomes a desired value. As a result, the joint member 33 is crushed between the mounting member 31 and the substrate 32, and is wetted toward the periphery of the mounting member 31 along the surface of the mounting member 31. Here, the laser light 26 emitted from the non-contact distance measuring unit 24a is reflected by the fixed lens 34a and the driving lens 34b at the center, and then sequentially passes through the transparent plate 28 and the adsorption hole 22a and the mounting member 31 on the substrate. The surface reflection of 32 is returned to the non-contact distance measuring portion 24a in the reverse order, and the distance G between the mounting member 31 and the substrate 32 can be directly measured. Further, the position of the driving lens 34b in the lateral direction may be at a position where the laser light 26 passes through the central portion of the inner side of the adsorption hole 22a. When the laser light 26 hits the outer peripheral portion of the adsorption hole 22a or the positional displacement occurs at the time of adsorption and hits the peripheral edge portion of the attachment member 31, the measurement precision of the distance G is lowered due to the disordered reflection.
接著,在控制裝置100的控制下,如圖4C及圖4D所表示,保持指定的間隙G,利用驅動鏡片驅動機構95,使驅動鏡片34b,從中央部的位置移動到安裝構件31之1個角隅部31a的近旁附近。接著,從非接觸距離測定部24a發出鐳射光26,檢查在角隅部31a的接著狀態,把檢查結果從非接觸距離測定部24a輸出到控制裝置100,用控制裝置100判定接著狀態是否良好。 Next, under the control of the control device 100, as shown in FIG. 4C and FIG. 4D, the designated gap G is held, and the driving lens driving mechanism 95 is used to move the driving lens 34b from the central portion to the mounting member 31. Near the corner portion 31a. Then, the laser light 26 is emitted from the non-contact distance measuring unit 24a, and the state of the inspection in the corner portion 31a is checked, and the inspection result is output from the non-contact distance measuring unit 24a to the control device 100, and the control device 100 determines whether or not the subsequent state is good.
在此,第2實施方式的安裝構件31,乃是第1實施方式的安裝構件11的一半左右小的構件,小的安 裝構件31與基板32之短邊方向的尺寸差小的緣故,為了不讓接合構件33超出基板32,一定得要微量供給接合構件33的塗布量。但是,在接合構件33為微量的情況下,受到供給方向的影響,塗布形狀不會變成點對稱的情況多,是希望能檢查安裝構件31的對角線31b上的角隅部31a、31c的附近部之至少2處。 Here, the attachment member 31 of the second embodiment is a member of about half of the attachment member 11 of the first embodiment, and is small. The difference in size between the mounting member 31 and the substrate 32 in the short-side direction is small, and in order to prevent the bonding member 33 from exceeding the substrate 32, the amount of application of the bonding member 33 must be supplied in a small amount. However, when the joint member 33 is in a small amount, it is often affected by the supply direction, and the coating shape does not become point-symmetric. It is desirable to inspect the corner portions 31a and 31c on the diagonal 31b of the mounting member 31. At least 2 places in the vicinity.
更進一步,如圖4E及圖4F所表示,保持指定的間隙G,把驅動鏡片34b,移動到安裝構件31的角隅部31a的近旁附近與點對稱之另1個角隅部31c的近旁附近,發出鐳射光26在各個角隅部31a、31c檢查接著狀態,用控制裝置100判定接著狀態是否良好。在以控制裝置100判定該2次的檢查之兩方為合格品的情況下,以控制裝置100判定為合格品。 Further, as shown in FIG. 4E and FIG. 4F, the predetermined gap G is held, and the driving lens 34b is moved to the vicinity of the vicinity of the corner portion 31a of the mounting member 31 and the vicinity of the other corner portion 31c which is point-symmetric. The laser light 26 is emitted to the respective corner portions 31a and 31c to check the next state, and the control device 100 determines whether or not the subsequent state is good. When the control device 100 determines that both of the two inspections are qualified products, the control device 100 determines that it is a good product.
經由第2實施方式中的製造方法,使用上述的構件製作半導體裝置。安裝構件31與基板32之間的間隙設定成20μm,亦即g21=22.4μm,使用上述的方法進行製作。接合構件33的檢查,係位在安裝構件31的對角線31b上,利用直徑50μm的鐳射光26測定分別離垂直交叉的2個邊100μm遠且點對稱的位置之2點31a、31c。在安裝構件31的吸附孔22a的直徑為300μm,且最大吸附位置偏離量為±100μm的情況下,確認了即便接合構件33相對於吸附孔22a的中心有位置偏移的話,也可以檢查接合狀態。而且,安裝構件31與基板32之間的接合間隙G為20±1μm。而且,與安裝構件31的短邊相交之2個角隅 部31a、31c的附近中,可以用控制裝置100判定尚未填充接合構件33的半導體裝置為不良。 According to the manufacturing method of the second embodiment, the semiconductor device is fabricated using the above-described members. The gap between the mounting member 31 and the substrate 32 was set to 20 μm, that is, g21 = 22.4 μm, and was produced by the above method. The inspection of the joint member 33 is carried out on the diagonal line 31b of the attachment member 31, and the laser light 26 having a diameter of 50 μm is used to measure two points 31a and 31c which are respectively 100 μm away from the two sides which are perpendicularly intersected and are point-symmetric. In the case where the diameter of the adsorption hole 22a of the attachment member 31 is 300 μm and the maximum adsorption position deviation amount is ±100 μm, it is confirmed that the engagement state can be checked even if the engagement member 33 is displaced from the center of the adsorption hole 22a. . Moreover, the joint gap G between the mounting member 31 and the substrate 32 is 20 ± 1 μm. Moreover, two corners intersecting the short sides of the mounting member 31 In the vicinity of the portions 31a and 31c, the control device 100 can determine that the semiconductor device that has not been filled with the bonding member 33 is defective.
以上,根據第2實施方式,即便是小的安裝構件31,在安裝構件31的貼附製程內,可以抑制朝後製程的不良流出,可以高精度確保安裝構件31與基板32之間隙。 As described above, according to the second embodiment, even in the small attachment member 31, in the attachment process of the attachment member 31, it is possible to suppress the poor flow out of the backward process, and it is possible to ensure the gap between the attachment member 31 and the substrate 32 with high precision.
本發明之第3實施方式,是與第1實施方式中的半導體裝置的製造裝置的構成相同,但使用翹曲大的安裝構件41這一點、以及檢查製程中的鐳射光6的測定處為4點這一點,是與第1實施方式及第2實施方式相異。尚且,有關第3實施方式中,與第1實施方式相同的構成,係賦與相同的元件符號,省略說明。 The third embodiment of the present invention is the same as the configuration of the manufacturing apparatus of the semiconductor device according to the first embodiment, but the mounting member 41 having a large warpage and the measurement position of the laser light 6 in the inspection process are 4 This point is different from the first embodiment and the second embodiment. In the third embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
說明第3實施方式中的半導體裝置的檢查製程。圖5A~圖5C,係分別為依序表示本發明的第3實施方式中的半導體裝置的製造方法之概略剖視圖及半導體裝置之俯視圖。以下的製造方法的製程,亦全部在控制裝置100的控制下進行。 The inspection process of the semiconductor device in the third embodiment will be described. 5A to 5C are a schematic cross-sectional view showing a method of manufacturing a semiconductor device according to a third embodiment of the present invention, and a plan view of the semiconductor device, respectively. The processes of the following manufacturing methods are also all performed under the control of the control device 100.
首先,在控制裝置100的控制下,如圖5A,利用安裝頭部驅動機構90,用安裝頭1吸附朝下凸出竅曲的安裝構件41後接近到基板42的話,安裝構件41緊接到接合構件43。接著,在控制裝置100的控制下,一邊利用非接觸距離測定機構4測定安裝構件41與基板42 之間的間隙G,為了達成期望的間隙,用安裝頭部驅動機構90下降控制安裝頭1。安裝構件41係朝下凸出翹曲的緣故,在接合構件43的量為較少的情況下,在翹曲最大的安裝構件41的角隅部附近,與基板42的間隙因為平面成為最大,最容易發生接合構件43的填充不良。但是,安裝構件41的翹曲為最大的角隅部,對每個安裝構件來說是不一致的。為此,最好是在4個角隅部41b、41c、41d、41e的附近位置,檢查各個接著狀態。 First, under the control of the control device 100, as shown in FIG. 5A, the mounting head 41 is attached to the substrate 42 by the mounting head driving mechanism 90, and the mounting member 41 is attracted downwardly to the lower side, and the mounting member 41 is in close contact with the mounting member 41. The joint member 43. Next, the mounting member 41 and the substrate 42 are measured by the non-contact distance measuring mechanism 4 under the control of the control device 100. In order to achieve a desired gap between the gaps G, the mounting head 1 is lowered by the mounting head driving mechanism 90. The mounting member 41 is warped downward, and when the amount of the joining member 43 is small, the gap with the substrate 42 is maximized in the vicinity of the corner portion of the mounting member 41 having the largest warpage. The filling failure of the joint member 43 is most likely to occur. However, the warp of the mounting member 41 is the largest corner portion, which is inconsistent for each mounting member. For this reason, it is preferable to check each of the following states at positions near the four corner portions 41b, 41c, 41d, and 41e.
在此,如圖5B,保持一定的間隙,用測定機構驅動機構91使非接觸距離測定機構4依序移動到各個角隅部41b、41c、41d、41e的附近位置,照射鐳射光6測定安裝構件41與基板42之間的間隙G,分別檢查接著狀態。 Here, as shown in FIG. 5B, the constant distance measuring means 4 is sequentially moved to the vicinity of each of the corner portions 41b, 41c, 41d, and 41e by the measuring mechanism drive mechanism 91, and the laser light 6 is measured and mounted. The gap G between the member 41 and the substrate 42 is checked for the next state.
使用圖5C所示的俯視圖,說明鐳射光6的測定位置。首先,在吸附孔2a的中心位置41a照射鐳射光6測定間隙,檢查接著狀態。之後,個別照射鐳射光6在各個第1角隅部41b附近位置、第2角隅部41c附近位置、第3角隅部41d附近位置、以及第4角隅部41e附近位置,檢查在各個的測定位置的接著狀態。各檢查結果,係從非接觸距離測定機構4輸出到控制裝置100,用控制裝置100判定接著狀態是否良好。全部的測定位置在用控制裝置100判定為填充著接合構件43的情況下,成為接合狀態的合格品。 The measurement position of the laser light 6 will be described using a plan view shown in FIG. 5C. First, the laser beam 6 is irradiated to the center position 41a of the adsorption hole 2a to measure the gap, and the subsequent state is checked. Then, the position of the individual irradiation laser light 6 in the vicinity of each of the first corner portions 41b, the position near the second corner portion 41c, the position near the third corner portion 41d, and the position near the fourth corner portion 41e are examined. The subsequent state of the position is determined. The result of each inspection is output from the non-contact distance measuring means 4 to the control device 100, and the control device 100 determines whether or not the subsequent state is good. When all the measurement positions are determined by the control device 100 to be filled with the joint member 43, the measurement position is a good product in the joined state.
例如,安裝構件41,例如利用光學玻璃所構 成,例如其折射率為1.63,透光率為96%,尺寸係一邊為2.0~2.1mm之正方形,厚度為180~200μm,翹曲量為10μm。而且,基板42乃是例如固態攝像元件等的半導體元件,尺寸為2.8mm×3.5mm、厚度180~200μm。更進一步,接合構件43是利用例如兼用紫外線硬化及熱硬化的接著劑所製成,例如其折射率為1.49,透光率為92%。 For example, the mounting member 41 is constructed, for example, using optical glass. For example, the refractive index is 1.63, the light transmittance is 96%, the size is a square of 2.0 to 2.1 mm on one side, the thickness is 180 to 200 μm, and the warpage amount is 10 μm. Further, the substrate 42 is a semiconductor element such as a solid-state image sensor, and has a size of 2.8 mm × 3.5 mm and a thickness of 180 to 200 μm. Further, the joining member 43 is made of, for example, an adhesive which is also used for both ultraviolet curing and heat curing, and has, for example, a refractive index of 1.49 and a light transmittance of 92%.
經由第3實施方式中的半導體裝置的製造方法,製作半導體裝置。控制成間隙G=50μm的結果,可以把安裝構件41的中央部的翹曲抑制在50±5μm。而且,可以把在至少1處的角隅部附近位置未填充接合構件13的半導體裝置作為不合格品予以排除,可以一邊確保在貼附製程內高精度地確保間隙,一邊抑制朝後製程的不良流出。 A semiconductor device is produced by the method of manufacturing a semiconductor device according to the third embodiment. As a result of controlling the gap G = 50 μm, the warpage of the central portion of the mounting member 41 can be suppressed to 50 ± 5 μm. In addition, the semiconductor device in which the bonding member 13 is not filled in the vicinity of the corner portion of at least one portion can be excluded as a defective product, and it is possible to ensure a high-precision securing of the gap in the attaching process while suppressing the defect in the backward process. Flow out.
以上,根據第3實施方式,即便是翹曲大的安裝構件11,在安裝構件11的貼附製程內,可以抑制朝後製程的不良流出,可以高精度確保安裝構件11與基板12之間隙。 As described above, according to the third embodiment, even in the attaching member 11 having a large warpage, in the attaching process of the mounting member 11, it is possible to suppress the poor flow out of the backward process, and it is possible to ensure the gap between the mounting member 11 and the substrate 12 with high precision.
尚且,在從第1實施方式到第3實施方式中,是說明了安裝頭1位置在比吸附基板12的平臺7更上方的事例,但不限於此。也可以做成把吸附基板12的平臺7配置在上方、吸附安裝構件11的安裝頭配置在下方,安裝頭上升之構成。 In the first embodiment to the third embodiment, the position of the mounting head 1 is higher than the platform 7 of the adsorption substrate 12, but the present invention is not limited thereto. Alternatively, the stage 7 on which the adsorption substrate 12 is placed may be disposed above, and the mounting head of the adsorption mounting member 11 may be disposed below, and the mounting head may be raised.
尚且,經由適宜組合上述各式各樣的實施方式或是變形例中的任意的實施方式或是變形例,是可以發 揮各自所具有的效果。而且,可以實施方式彼此的組合或是實施例彼此的組合或是實施方式與實施例的組合,同時也可以是相異的實施方式或是實施例的中的特徵彼此的組合。 Furthermore, it is possible to combine any of the above-described various embodiments or modifications in any of the above embodiments or modifications. Wave each with its own effects. Furthermore, combinations of the embodiments or combinations of the embodiments or combinations of the embodiments and the embodiments may be used, and also different embodiments or combinations of the features in the embodiments.
有關本發明的半導體裝置之製造方法及製造裝置,係具有高精度地確保安裝構件與基板的間隙之效果、以及判別接著不良後防止接著不合格品朝後製程的流出之效果,在安裝小型的光學玻璃、透鏡、或是稜鏡等之半導體安裝方面是特別是有用。 The manufacturing method and the manufacturing apparatus of the semiconductor device according to the present invention have an effect of ensuring a gap between the mounting member and the substrate with high precision, and an effect of preventing the subsequent discharge of the defective product to the subsequent process after the failure is determined, and the mounting is small. It is particularly useful for semiconductor mounting of optical glass, lenses, or germanium.
1‧‧‧安裝頭 1‧‧‧Installation head
1a‧‧‧側壁 1a‧‧‧ side wall
1b‧‧‧本體 1b‧‧‧ Ontology
2‧‧‧透明吸附板 2‧‧‧Transparent adsorption plate
2a‧‧‧吸附孔 2a‧‧‧Adsorption holes
3‧‧‧真空室 3‧‧‧vacuum room
4‧‧‧非接觸距離測定機構 4‧‧‧ Non-contact distance measuring mechanism
5‧‧‧真空泵 5‧‧‧Vacuum pump
6‧‧‧鐳射光 6‧‧‧Laser light
7‧‧‧平臺 7‧‧‧ platform
8‧‧‧透明板 8‧‧‧Transparent board
11‧‧‧安裝構件 11‧‧‧Installation components
12‧‧‧基板 12‧‧‧Substrate
13‧‧‧接合構件 13‧‧‧Joining members
90‧‧‧安裝頭部驅動機構 90‧‧‧Installing the head drive mechanism
91‧‧‧測定機構驅動機構 91‧‧‧Measurement mechanism drive mechanism
97‧‧‧半導體裝置 97‧‧‧Semiconductor device
100‧‧‧控制裝置 100‧‧‧Control device
G‧‧‧距離 G‧‧‧Distance
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CN105551930A (en) | 2016-05-04 |
JP2016086039A (en) | 2016-05-19 |
JP6128337B2 (en) | 2017-05-17 |
TW201622027A (en) | 2016-06-16 |
CN105551930B (en) | 2018-02-16 |
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