TWI578581B - Light emitting device - Google Patents

Description

Light-emitting element

The present invention relates to a semiconductor component, and more particularly to a light emitting component.

Generally, the light-emitting chip is composed of a substrate, an epitaxial structure, an N-type electrode, and a P-type electrode, wherein the N-type electrode and the P-type electrode respectively contact the N-type semiconductor layer and the P-type semiconductor layer. In order to increase the application of the illuminating wafer, the illuminating element is usually disposed on a carrier, and the illuminating wafer is encapsulated by the encapsulant to form a illuminating element. The carrier is, for example, a printed circuit board or a ceramic substrate, and the carrier has a pad corresponding to the N-type electrode and the P-type electrode of the light-emitting chip. At this time, the area of the carrier is larger than the orthographic projection area of the illuminating wafer on the carrier, that is, the edge of the carrier is larger than the edge of the luminescent wafer. Moreover, since the encapsulant is formed on the illuminating wafer by, for example, dispensing, the encapsulant exhibits an arc-like shape (such as a semicircular or semi-elliptical shape) on the carrier when the illuminating wafer is packaged. In this way, the formed light-emitting element has a larger width (ie, the width of the carrier) and a larger height (ie, an arc-shaped encapsulant), that is, the light-emitting element has a larger volume and cannot conform to The need for thinner and smaller components today.

The present invention provides a light-emitting element having a small volume.

The light-emitting device of the present invention comprises a substrate, an electrode connection layer, an epitaxial structure and a plurality of pads. The substrate has an upper surface and a lower surface opposite to each other and a plurality of conductive vias penetrating the substrate and connecting the upper surface and the lower surface. The electrode connection layer is disposed on the upper surface of the substrate and is connected to the conductive via. Wherein the edge of the electrode connection layer is aligned with the edge of the substrate. The epitaxial structure is disposed on the electrode connection layer and electrically connected to the electrode connection layer. The pad is disposed on the lower surface of the substrate and is connected to the conductive via.

In an embodiment of the invention, the electrode connection layer has at least one first electrode, at least one second electrode, and a connection layer disposed between the substrate and the first electrode and between the substrate and the second electrode. Wherein the edge of the connection layer is aligned with the edge of the substrate.

In an embodiment of the invention, the light-emitting element further includes an insulating layer disposed on the electrode connection layer and insulating the first electrode and the second electrode.

In an embodiment of the invention, the epitaxial structure includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer. The first type semiconductor layer is disposed on the insulating layer, wherein the first electrode is electrically connected to the first type semiconductor layer through the insulating layer. The light emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the light emitting layer, wherein the second electrode is electrically connected to the second type semiconductor layer through the insulating layer, the first type semiconductor layer, and the light emitting layer.

In an embodiment of the invention, the light emitting device further includes an ohmic contact layer disposed between the first type semiconductor layer and the insulating layer.

In an embodiment of the invention, the ohmic contact layer is a patterned structure.

In an embodiment of the invention, the light-emitting element further includes a reflective layer disposed between the ohmic contact layer and the insulating layer.

In an embodiment of the invention, the light-emitting element further includes an insulating protective layer disposed on an edge of the first-type semiconductor layer, an edge of the light-emitting layer, and an edge of the second-type semiconductor layer, wherein the edge of the insulating protective layer is insulated The edges of the layers are aligned.

In an embodiment of the invention, the light-emitting element further includes a one-piece wavelength conversion layer disposed on the epitaxial structure, wherein an edge of the sheet-like wavelength conversion layer is aligned with an edge of the substrate.

In an embodiment of the invention, the epitaxial structure has a rough surface, and the rough surface and the sheet-like wavelength conversion layer have micron-sized voids.

In an embodiment of the invention, the light-emitting element further includes a light coupling layer disposed between the sheet-like wavelength conversion layer and the epitaxial structure.

In an embodiment of the invention, the light coupling layer has a rough surface, and the rough surface has a micron-sized void between the sheet-like wavelength conversion layer or the epitaxial structure.

In an embodiment of the invention, the sheet-like wavelength conversion layer includes at least two sheet-like wavelength conversion unit layers, and a main emission wavelength of the sheet-like wavelength conversion unit layers is gradually decreased toward a direction away from the epitaxial structure.

In an embodiment of the invention, the thicknesses of the chip-like wavelength conversion unit layers are different.

In an embodiment of the invention, the thickness of the sheet-like wavelength conversion unit layers is gradually increased toward a direction away from the epitaxial structure.

In an embodiment of the invention, the light-emitting element further includes a color mixing layer disposed on the sheet-like wavelength conversion layer, wherein an edge of the color mixing layer is aligned with an edge of the sheet-like wavelength conversion layer.

In an embodiment of the invention, the thickness of the sheet-like wavelength conversion layer is between 1.5 and 25 times the thickness of the epitaxial structure.

In an embodiment of the invention, the orthographic structure of the epitaxial structure on the substrate is between 0.8 and 1 times the area of the upper surface of the substrate.

In an embodiment of the invention, the epitaxial structure has a thickness between 3 microns and 15 microns.

In an embodiment of the invention, each of the conductive vias and the electrode connection layer has at least one space.

In an embodiment of the invention, the at least one first electrode is a plurality of first electrodes, and the at least one second electrode is a plurality of second electrodes, and each of the first electrodes has a point-like profile in a plan view, and each of the first electrodes The top view of the two electrodes is a combination of a dot and a line.

Based on the above, according to the light-emitting element of the present invention, the edge of the electrode connection layer is substantially aligned with the edge of the substrate, and the power supply to the pad through the external circuit can be used. Compared with the conventional light-emitting element, the light-emitting element is electrically connected to the pad of a larger carrier, and the light-emitting element of the present invention can be used in comparison to the power supply of the external circuit through the pad. volume of.

In order to make the above features and advantages of the present invention more apparent, the following is a special The embodiments are described in detail below in conjunction with the drawings.

100a, 100b1, 100b2, 100c1, 100c2, 100c3, 100d, 100e, 100f, 100g, 100h, 100i1, 100i2, 100j, 100k‧ ‧ light-emitting elements

110a, 110g‧‧‧ substrate

111‧‧‧ edge

112‧‧‧ upper surface

114‧‧‧ lower surface

116a, 116g‧‧‧ conductive through holes

117‧‧‧ space

120a, 120h‧‧‧electrode connection layer

121‧‧‧ edge

122a, 122h‧‧‧ first electrode

124a, 124h‧‧‧ second electrode

126a‧‧‧Connection layer

130‧‧‧Insulation

140‧‧‧First type semiconductor layer

150‧‧‧Lighting layer

160‧‧‧Second type semiconductor layer

170‧‧‧ pads

180a, 180e, 180f‧‧‧ chip wavelength conversion layer

181‧‧‧ edge

182e, 182f‧‧‧ first chip wavelength conversion unit layer

184e, 184f‧‧‧ second chip wavelength conversion unit layer

186e, 186f‧‧‧ third chip wavelength conversion unit layer

190c1, 190c3, 190d‧‧‧ optical coupling layer

191‧‧‧Rough surface

210a, 210b‧‧‧ ohmic contact layer

220‧‧‧reflective layer

230‧‧‧Insulation protective layer

231‧‧‧ edge

240‧‧‧Color mixing layer

B‧‧‧ gap

E‧‧‧ epitaxial structure

E1‧‧‧Rough surface

S1, S2‧‧‧ flat surface

1 is a cross-sectional view of a light emitting device according to an embodiment of the invention.

2A and 2B are schematic cross-sectional views showing a light emitting device according to another embodiment of the present invention.

3A, 3B, and 3C are schematic cross-sectional views showing a light-emitting element according to another embodiment of the present invention.

4 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention.

6 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention.

FIG. 8 is a schematic top plan view showing an electrode connection layer of a light-emitting element according to another embodiment of the present invention.

9A and 9B are schematic cross-sectional views showing a light-emitting element according to another embodiment of the present invention.

FIG. 10 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention.

FIG. 11 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention.

1 is a cross-sectional view of a light emitting device according to an embodiment of the invention. Referring to FIG. 1 , in the embodiment, the light emitting device 100 a includes a substrate 110 a , an electrode connection layer 120 a , an epitaxial structure E , and a plurality of pads 170 . In detail, the substrate 110a has an upper surface 112 and a lower surface 114 opposed to each other and a plurality of conductive vias 116a penetrating the substrate 110a and connecting the upper surface 112 and the lower surface 114. The electrode connection layer 120a is disposed on the upper surface 112 of the substrate 110a and is connected to the conductive via 116a. The edge 121 of the electrode connection layer 120a is substantially aligned with the edge 111 of the substrate 110a. The electrode connection layer 120a includes at least one first electrode 122a, at least one second electrode 124a, and a substrate 110a and a first electrode 122a and a substrate. A connection layer 126a between the 110a and the second electrode 124a. The epitaxial structure E is disposed on the electrode connection layer 120a and electrically connected to the electrode connection layer 120a. The pad 170 is disposed on the lower surface 114 of the substrate 110a and is connected to the conductive via 116a.

In detail, the light-emitting element 100a of the present embodiment further includes an insulating layer 130 disposed on the electrode connection layer 120a and insulating the first electrode 122a and the second electrode 124a. As shown in FIG. 1 , the epitaxial structure E of the present embodiment includes a first type semiconductor layer 140 , a light emitting layer 150 , and a second type semiconductor layer 160 . First type semiconductor layer The first electrode 122 a is electrically connected to the first type semiconductor layer 140 through the insulating layer 130 . The light emitting layer 150 is disposed on the first type semiconductor layer 140. The second type semiconductor layer 160 is disposed on the light emitting layer 150 , wherein the second electrode 124 a is electrically connected to the second type semiconductor layer 160 through the insulating layer 130 , the first type semiconductor layer 140 , and the light emitting layer 150 .

More specifically, the substrate 110a of the present embodiment may be a substrate having a better heat dissipation effect and a heat transfer coefficient greater than 10 W/mK. The substrate 110a may also have a resistivity greater than 10 ¹⁰ Ω. m insulating substrate. Here, the substrate 110a is, for example, a ceramic substrate or a sapphire substrate. Preferably, the substrate 110a is a ceramic substrate having both heat dissipation and insulation effects. The thickness of the substrate 110a is, for example, between 100 micrometers and 700 micrometers, preferably between 100 micrometers and 300 micrometers. As shown in FIG. 1, the conductive via 116a of the present embodiment is formed by filling a conductive material in the through hole of the substrate 110a, for example, a metal material such as copper or gold. The opposite ends of the conductive via 116a of the substrate 110a are directly connected to the electrode connection layer 120a and the pad 170, respectively, wherein the cross-sectional profile of the conductive via 116a may have different shapes depending on the manner in which it is fabricated. For example, if the mechanical drilling method is used, the profile of the conductive via hole is rectangular (not shown); if the laser drilling method is used, the profile of the conductive via 116a presented is Trapezoidal, as shown in Figure 1. If the laser drilling method is used, the direction of the laser ablation will also affect the cross-sectional profile of the conductive via. For example, if the laser beam is irradiated by the upper surface 112 of the substrate 110a, the cross-sectional profile of the conductive via will be an inverted trapezoid (not shown) which is narrower and wider than the upper surface; if the lower surface 114 of the substrate 110a is used to illuminate the laser When the light is emitted, the cross-sectional profile of the conductive via 116a will be a narrow trapezoidal width, as shown in FIG. The cross-sectional profile of the conductive vias described above is within the scope of the present invention and is not limited by the cross-sectional profile of the conductive vias 116a.

The first electrode 122a of the electrode connection layer 120a of the present embodiment is, for example, a P-type electrode, and the second electrode 124a is, for example, an N-type electrode, but is not limited thereto. The material of the first electrode 122a and the second electrode 124a may be selected from the group consisting of chromium, platinum, gold, an alloy of the above materials, and a combination of the above materials. The connection layer 126a is disposed between the substrate 110a and the first electrode 122a and between the substrate 110a and the second electrode 124a. The partial connection layer 126a is connected to the first electrode 122a and the partial connection layer 126a is connected to the second electrode 124. The material of the connection layer 126a may be selected from the group consisting of titanium, gold, indium, tin, chromium, platinum, alloys of the above materials, and combinations of the foregoing. It should be noted that the first electrode 122a, the second electrode 124a, and the connecting layer 126a may be the same material or different materials, may be integrally formed, or may be separately manufactured, and are not limited thereto. As shown in FIG. 1, the front projection area of the partial connection layer 126a connected to the second electrode 124a of the present embodiment on the substrate 110a is larger than the orthographic projection area of the partial connection layer 126a connected to the first electrode 122a on the substrate 110a. That is, in the present embodiment, the area of the partial connection layer 126a connected to the second electrode 124a is larger than the area of the partial connection layer 126a connected to the first electrode 122a. In particular, the first electrode 122a and the second electrode 124a of the present embodiment are located on the same side, that is, on one side of the first type semiconductor layer 140. In addition, the first type semiconductor layer 140 of the epitaxial structure E of the present embodiment is, for example, a P type semiconductor layer, and the second type semiconductor layer 160 is, for example, an N type semiconductor layer, but is not limited thereto. The edge of the epitaxial structure E may be less than or equal to the substrate 110a Preferably, the surface area of the epitaxial structure E on the substrate 110a is between 0.8 times and 1 times the area of the upper surface 112 of the substrate 110a, and the fabrication on the subsequent protection process does not affect the overall volume. And does not reduce the excessive light-emitting area. Whereas, the thickness of the epitaxial structure E is between 3 micrometers and 15 micrometers, preferably between 4 micrometers and 8 micrometers, compared to the thickness of the epitaxial structure of the conventional light-emitting element, the present invention The epitaxial structure E has a thin thickness and can have a small overall thickness. In addition, since the pads 170 of the present embodiment are located on the lower surface 114 of the substrate 110a, the light-emitting elements 100a can be electrically connected to external circuits (not shown) through the pads 170, and can pass through the pads 170. The heat generated by the light-emitting element 100a is quickly transmitted to the outside. In particular, the edge of the pad 170 can be aligned with the edge of the substrate 110a. That is, the electrode connection layer 120a, the substrate 110a and the edge of the pad 170 are on the same side.

Due to the light-emitting element 100a of the present embodiment, the edge 121 of the electrode connection layer 120a is substantially aligned with the edge 111 of the substrate 110a. Therefore, compared with the conventional light-emitting element, the electrode of the light-emitting chip is connected to the pad of a larger carrier, and then the power supply through the external circuit is used on the pad, and the light-emitting element 100a of the embodiment is used. The overall width is small and can have a small volume.

It is to be noted that the following embodiments use the same reference numerals and parts of the above-mentioned embodiments, and the same reference numerals are used to refer to the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

2A is a cross-sectional view of a light emitting device according to another embodiment of the present invention. Schematic diagram. Referring to FIG. 1 and FIG. 2A simultaneously, the light-emitting element 100b1 of the present embodiment is similar to the light-emitting element 100a of FIG. 1, but the main difference is that the light-emitting element 100b1 of the present embodiment further includes a one-piece wavelength conversion layer. 180a, wherein the sheet-like wavelength conversion layer 180a is disposed on the epitaxial structure E, and the edge 181 of the sheet-like wavelength conversion layer 180a is aligned with the edge 111 of the substrate 110a, and the extension direction of the sheet-like wavelength conversion layer 180a and the extension of the substrate 110a The same direction. As shown in FIG. 2A, the sheet-like wavelength conversion layer 180a of the present embodiment and the substrate 110a both extend laterally, and here the sheet-like wavelength conversion layer 180a has two flat surfaces S1, S2 opposed to each other. That is, the sheet-like wavelength conversion layer 180a of the present embodiment is substantially a planar structure. Furthermore, the thickness of the sheet-like wavelength conversion layer 180a of the present embodiment is, for example, between 1.5 and 25 times the thickness of the epitaxial structure E, and the thickness of the sheet-like wavelength conversion layer 180a is less than 1.5 of the thickness of the epitaxial structure E. If the thickness of the epitaxial structure E is easily penetrated directly through the sheet-like wavelength conversion layer 180a, the conversion efficiency is poor. If the thickness of the sheet-like wavelength conversion layer 180a is greater than 25 times the thickness of the epitaxial structure E, the deflection is hindered. The exit of the crystal structure E. In the present embodiment, the preferred thickness of the sheet-like wavelength conversion layer 180a is between 20 micrometers and 80 micrometers. Specifically, the thickness of the sheet-like wavelength conversion layer 180a plus the thickness of the epitaxial structure E is preferably. Ground, less than 90 microns, allows the light-emitting element 100a to have a small volume.

Since the sheet-like wavelength conversion layer 180a of the present embodiment has a planar structure, the edge 181 of the sheet-like wavelength conversion layer 180a is substantially aligned with the edge 111 of the substrate 110a. Therefore, the light-emitting element of the present embodiment is compared to a conventional light-emitting element that encapsulates a light-emitting wafer through an encapsulant to form an encapsulant having an arc-shaped outer shape. 100b1 can have a smaller volume. Furthermore, in order to improve the luminous efficiency of the overall light-emitting element 100b1, it is also possible to transmit the scattering and reflection of the light through the diffusion of the diffusing particles or the reflective particles in the sheet-like wavelength conversion layer 180a, which is still to be protected by the present invention. The scope. In addition, since the sheet-like wavelength conversion layer 180a of the present embodiment has a planar structure, the illumination angle of the entire light-emitting element 100b1 is, for example, less than 140 degrees, which can have better light source collimation, and can be applied to subsequent optical design. It has better elasticity.

2B is a cross-sectional view showing a light emitting device according to another embodiment of the present invention. Referring to FIG. 2A and FIG. 2B simultaneously, the light-emitting element 100b2 of the present embodiment is similar to the light-emitting element 100b1 of FIG. 2A, but the main difference between the two is that the epitaxial structure E of the light-emitting element 100b2 of the present embodiment has a roughness. The surface E1 has a micron-sized void between the rough surface E1 and the sheet-like wavelength conversion layer 180a. That is, the surface of the epitaxial structure E that is in contact with the sheet-like wavelength conversion layer 180a is not a flat surface, and the light emitted by the epitaxial structure E transmits a micron-sized cavity to cause a scattering effect, which causes the light to enter the sheet wavelength more uniformly. The conversion layer 180a is thus designed to make the light generated by the epitaxial structure E produce a better scattering effect, and the light uniformity of the overall light-emitting element 100b2 can be effectively improved.

In addition, the micron-sized void between the epitaxial structure E and the sheet-like wavelength conversion layer 180a can also serve as a buffer space between the two different element layers and increase the bonding ability between the two, thereby improving the reliability of the light-emitting element 100b2. It is more worth mentioning that if the cavity between the epitaxial structure E and the sheet-like wavelength conversion layer 180a is smaller than a micron level, such as less than 0.1 micrometer, the void is too small, and the scattering effect is not good, if it is larger than the micron level, such as If it is larger than 10 μm, the void is too large, and the bonding area of the epitaxial structure E and the sheet-like wavelength conversion layer 180a is too small, and the bonding effect is not good.

3A is a cross-sectional view of a light emitting device according to another embodiment of the present invention. Referring to FIG. 2A and FIG. 3A, the light-emitting element 100c1 of the present embodiment is similar to the light-emitting element 100b1 of FIG. 2A, but the main difference is that the light-emitting element 100c1 of the present embodiment further includes an optical coupling layer 190c1. The optical coupling layer 190c1 is disposed between the chip-shaped wavelength conversion layer 180a and the second-type semiconductor layer 160 of the epitaxial structure E for increasing the light-emitting efficiency of the light-emitting element 100c1 and increasing the epitaxial structure E and the chip-like wavelength conversion layer 180a. The joint between. Here, the thickness of the light coupling layer 190c1 is less than 10 micrometers, and can be used as a buffer between the epitaxial structure E and the sheet-like wavelength conversion layer 180a, and the epitaxial structure E and the sheet-like wavelength conversion layer 180a can be compared. Good bonding effect. Here, the edge of the light coupling layer 190c1 is aligned with the edge of the second type semiconductor layer 160 of the epitaxial structure E.

More specifically, the material of the light coupling layer 190c1 of the present embodiment is a nitride material, such as gallium nitride; or the material of the light coupling layer 190c1 is substantially the same as the material of the second type semiconductor layer 160, and It has a better bonding effect, but is not limited thereto. In addition, in order to improve the luminous efficiency of the overall light-emitting element 100c1, the light-coupling layer 190c1 may be made of a material having a refractive index close to that of the second-type semiconductor layer 160, and may be diffused, reflected, or scattered in the light-coupling layer 190c1. At least two of the above, the light generated by the epitaxial structure E can be scattered, reflected and diffused, and the refractive index of the optical coupling layer 190c1 can be changed to make the refractive index of the optical coupling layer 190c1 smaller than that of the second semiconductor. Layer 160 The refractive index is greater than the refractive index of the sheet-like wavelength conversion layer 180a to increase the light extraction efficiency, which is still within the scope of the present invention.

3B is a cross-sectional view of a light emitting device according to another embodiment of the present invention. 3A and FIG. 3B, the light-emitting element 100c2 of the present embodiment is similar to the light-emitting element 100c1 of FIG. 3A, but the main difference is that the epitaxial structure layer E of the light-emitting element 100c2 of the present embodiment has a The rough surface E1 has a micron-sized void between the rough surface E1 and the light coupling layer 190c1. That is, the surface of the epitaxial structure E and the light coupling layer 190c1 is not a flat surface, and the light emitted by the epitaxial structure E transmits a micron-sized cavity to cause a scattering effect, which causes the light to enter the light coupling layer 190c1 more uniformly. Therefore, through the structural design, the light generated by the epitaxial structure E can produce a better scattering effect, and the light uniformity of the overall light-emitting element 100c2 can be effectively improved. In addition, a micron-sized cavity between the epitaxial structure E and the light coupling layer 190c1 can also serve as a buffer between the two element layers, so that a better bonding effect between the epitaxial structure E and the light coupling layer 190c1 is achieved. It is worth mentioning that if the cavity between the epitaxial structure E and the light coupling layer 190c1 is less than a micron level, such as less than 0.1 micrometer, the cavity is too small, and the scattering effect is not good. If it is larger than the micron level, such as greater than 10 micrometers, The void is too large, and the bonding area of the epitaxial structure E and the light coupling layer 190c1 is too small, and the bonding effect is rather poor.

3C is a cross-sectional view showing a light emitting device according to another embodiment of the present invention. Referring to FIG. 3C and FIG. 3A simultaneously, the light-emitting element 100c3 of the present embodiment is similar to the light-emitting element 100c1 of FIG. 3A, but the main difference is that the light-coupling layer 190c3 of the light-emitting element 100c3 of the present embodiment has a roughness. Surface 191, And there is a micron-order void between the rough surface 191 and the sheet-like wavelength conversion layer 180a. That is, the surface of the optical coupling layer 190c3 and the sheet-like wavelength conversion layer 180a is not a flat surface. The structure design can make the light generated by the epitaxial structure E produce a better scattering effect, and the overall light-emitting element 100c3 can be effectively improved. The uniformity of light output. It should be noted that the pore size of the cavity needs to be larger than 0.1 micrometer, especially larger than the light-emitting wavelength of the light-emitting element 100c3, so that the scattering effect is better, but the pore diameter needs to be less than 10 micrometers to avoid the total reflection effect, thereby affecting The amount of light emitted. In addition, the micron-scale void between the light coupling layer 190c3 and the sheet-like wavelength conversion layer 180a can also serve as a buffer space between the two different element layers, and can have a relationship between the light coupling layer 190c3 and the sheet-like wavelength conversion layer 180a. A preferred bonding effect is to improve the reliability of the light-emitting element 100c3. Of course, in other embodiments not shown, a micron-sized cavity between the rough surface and the epitaxial structure may also be included, which is still within the scope of the present invention. In particular, the optical coupling layer 190c3 may have two rough surfaces, that is, a micron-sized cavity (not shown) between the chip-wavelength conversion layer 180a and the epitaxial structure E, which may cause optical coupling. The layer 190c3 and the epitaxial structure E of the sheet-like wavelength conversion layer 180a and the light-coupling layer 190c3 have a better bonding effect to improve the reliability of the light-emitting element 100c3, which is not limited thereto.

4 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention. Referring to FIG. 4 and FIG. 2A, the light-emitting element 100d of the present embodiment is similar to the light-emitting element 100b1 of FIG. 2A, but the main difference is that the light-emitting element 100d of the present embodiment further includes an optical coupling layer 190d. The light coupling layer 190d is disposed between the sheet-like wavelength conversion layer 180a and the epitaxial structure E and has a patterned coarse The rough surface 191, the light coupling layer 190d and the sheet-like wavelength conversion layer 180a have at least one gap B therebetween. As shown in FIG. 4, the optical coupling layer 190d of the present embodiment has a structure in which a cross-sectional pattern is a periodic triangular pattern, and a gap B exists between two adjacent triangular patterns; of course, other not shown In the embodiment, the cross-sectional pattern of the optical coupling layer may also be other patterns and may also be a non-periodic arrangement, which still falls within the scope of the present invention. Since the light coupling layer 190d of the present embodiment and the sheet-like wavelength conversion layer 180a are non-flat contact, the structure design can make the light generated by the epitaxial structure E have a scattering effect, and the light emission of the entire light-emitting element 100d can be effectively improved. Uniformity. In addition, the gap between the optical coupling layer 190d and the sheet-like wavelength conversion layer 180a can also serve as a buffer space between the two different element layers, and can better between the epitaxial structure E and the sheet-like wavelength conversion layer 180a. The bonding effect is to improve the reliability of the light emitting element 100d.

FIG. 5 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention. Referring to FIG. 5 and FIG. 2A simultaneously, the light-emitting element 100e of the present embodiment is similar to the light-emitting element 100b1 of FIG. 2A, but the main difference is that the sheet-like wavelength conversion layer 180e of the light-emitting element 100e of the present embodiment includes At least two chip-shaped wavelength conversion unit layers, the main light-emitting wavelengths of the chip-like wavelength conversion unit layers are gradually decreased in a direction away from the epitaxial structure E. In this embodiment, the at least two chip wavelength conversion unit layers are three chip wavelength conversion unit layers, and the chip wavelength conversion units include a first chip wavelength conversion unit layer 182e and a second film sequentially stacked. The wavelength conversion unit layer 184e and a third sheet-like wavelength conversion unit layer 186e. Wherein, the main illuminating wavelength of the first flaky wavelength conversion unit layer 182e is greater than the second flaky wavelength conversion The main emission wavelength of the unit layer 184e, and the main emission wavelength of the second sheet-like wavelength conversion unit layer 184e is larger than the main emission wavelength of the third sheet-like wavelength conversion unit layer 186e. Such an arrangement allows light converted by the first sheet-like wavelength conversion layer 182e having a longer main emission wavelength to be not affected by the second and third sheet-like wavelength conversion layers 184e, 186e having a shorter main emission wavelength. Absorbed, and so on. For example, when the epitaxial structure E emits blue light, the first sheet-like wavelength conversion unit layer 182e may be, for example, a red sheet-like wavelength conversion unit layer, and the second sheet-like wavelength conversion unit layer 184e may be, for example, a yellow sheet. The wavelength conversion unit layer, and the third sheet-like wavelength conversion unit layer 186e can be, for example, a green sheet-like wavelength conversion unit layer, which can effectively improve the uniformity and color rendering of the overall light-emitting element 100e. Of course, in other embodiments, the first chiplet wavelength conversion unit layer 182e, the second chip wavelength conversion unit layer 184e, and the third chip wavelength conversion unit layer 186e may also be other color chip wavelength conversion unit layers. This does not limit its color. In particular, the extending directions of the first sheet-like wavelength conversion unit layer 182e, the second sheet-like wavelength conversion unit layer 184e, and the third sheet-like wavelength conversion unit layer 186e are the same as the extending direction of the substrate 110a, here, the first sheet shape The wavelength conversion unit layer 182e, the second sheet-like wavelength conversion unit layer 184e, and the third sheet-like wavelength conversion unit layer 186e are the same as the extending direction of the substrate 110a, and both are laterally extending planar structures, so that the overall light-emitting element 100e can be made Small size. Preferably, each of the sheet-like wavelength conversion unit layers has a thickness of between 5 micrometers and 30 micrometers.

6 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention. Please refer to FIG. 6 and FIG. 5 simultaneously, the light-emitting element 100f and the diagram of the embodiment. The light-emitting elements 100e of 5 are similar, but the main difference between them is that the thickness of the first sheet-like wavelength conversion unit layer 182f of the sheet-like wavelength conversion layer 180f of the present embodiment, and the thickness of the second sheet-like wavelength conversion unit layer 184f The thickness and the thickness of the third sheet-like wavelength conversion unit layer 186f are all different. Preferably, the thickness of the sheet-like wavelength conversion unit layers is gradually increased in a direction away from the epitaxial structure E. Such an arrangement can be such that the light converted by the first sheet-like wavelength conversion layer 182f having a longer main emission wavelength is not affected by the second and third sheet-like wavelength conversion layers 184f, 186f having a shorter main emission wavelength. It is absorbed, so it is not necessary to have the same thickness for each layer to obtain high color rendering and uniform light output. For example, when the first sheet-like wavelength conversion unit layer 182e is a red sheet-like wavelength conversion unit layer, and the second sheet-like wavelength conversion unit layer 184e is a green sheet-like wavelength conversion unit layer, wherein the first sheet-like wavelength The thickness of the conversion unit layer 182f may be 0.2 to 0.4 times the thickness of the second sheet-like wavelength conversion unit layer 184f, so that the cost of the red phosphor powder can be reduced, and the manufacturing cost of the overall light-emitting element 100f can be effectively reduced.

FIG. 7 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention. Referring to FIG. 7 and FIG. 2A simultaneously, the light-emitting element 100g of the present embodiment is similar to the light-emitting element 100b1 of FIG. 2A, but the main difference is that each conductive via 116g and the electrode of the substrate 110g of the present embodiment There is at least one space 117 between the connection layers 120a, wherein the space 117 can be used between the conductive vias 116g and the electrode connection layer 120a having different thermal expansion coefficients and between the conductive vias 116g and the pads 170 at different temperatures. The buffer space increases the reliability of the light-emitting element 100g. Here, the space 117 in FIG. 7 can be close to or connected to the upper surface 112 of the substrate 110g. Or the lower surface 114, but not limited thereto.

FIG. 8 is a schematic top plan view of an electrode connection layer of a light-emitting element according to an embodiment of the invention. Referring to FIG. 8, the electrode connection layer 120h of the light-emitting element 100h of the present embodiment has a plurality of first electrodes 122h and a plurality of second electrodes 124h, wherein each of the first electrodes 122h has a dot-like profile. However, the top profile of each of the second electrodes 124h is, for example, a combination of a dot shape and a line shape. That is to say, the second electrode 124h of the present embodiment has both a dot-shaped electrode and a line-shaped electrode, wherein as shown in FIG. 8, these electrode patterns are in a state of being separated from each other. Since the second electrode 124h in the light-emitting element 100h of the present embodiment has an electrode pattern having a dot shape and a line profile, the current distribution can be made more uniform and the forward voltage can be effectively reduced.

FIG. 9A is a cross-sectional view showing a light emitting device according to another embodiment of the present invention. Referring to FIG. 9A and FIG. 3A, the light-emitting element 100i1 of the present embodiment is similar to the light-emitting element 100c1 of FIG. 3A, but the main difference is that the light-emitting element 100i1 of the present embodiment further includes an ohmic contact layer 210a. The first semiconductor layer 140 is disposed between the first semiconductor layer 140 and the insulating layer 130. In addition, the light emitting device 100i1 of the present embodiment may further include a reflective layer 220 disposed between the ohmic contact layer 210a and the insulating layer 130. Here, the arrangement of the ohmic contact layer 210a can effectively improve the electrical connection between the first type semiconductor layer 140 and the first electrode 122a, wherein the material of the ohmic contact layer 210a is, for example, nickel or nickel oxide. On the other hand, the material of the reflective layer 220 is, for example, silver, which can reflect the light emission of the light-emitting layer 150, so that the light-emitting efficiency is better. In addition, the thickness of the ohmic contact layer 210a of the present embodiment and the thickness of the reflective layer 220 are, for example, 1000 angstroms to Between 7000 angstroms, preferably between 1000 angstroms and 3,500 angstroms.

FIG. 9B is a cross-sectional view of a light emitting device according to another embodiment of the present invention. Referring to FIG. 9B and FIG. 9A simultaneously, the light-emitting element 100i2 of the present embodiment is similar to the light-emitting element 100i1 of FIG. 9A, but the main difference is that the ohmic contact layer 210b is a patterned structure, as shown in FIG. 9B. The light-emitting element 100i2, the ohmic contact layer 210b cross-sectional pattern is embodied by a periodic pattern of island patterns, so that the first type semiconductor layer 140 has a large contact with the first electrode 122a and the reflective layer 220. The surface area is such that electrical connection and bonding between the ohmic contact layer 210b, the first type semiconductor layer 140, and the first electrode 122a and the reflective layer 220 can be increased. However, the cross-sectional pattern of the ohmic contact layer 210b may also be formed by other periodic or non-periodic patterns, and is not limited thereto.

FIG. 10 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention. Referring to FIG. 10 and FIG. 9A, the light-emitting element 100j of the present embodiment is similar to the light-emitting element 100i1 of FIG. 9A, but the main difference is that the light-emitting element 100j of the embodiment further includes an insulating protective layer 230. The edge of the first type semiconductor layer 140, the edge of the light emitting layer 150, and the edge of the second type semiconductor layer 160 are covered, wherein the edge 231 of the insulating protective layer 230 is aligned with the edge of the insulating layer 130. Here, the material of the insulating protective layer may be ceria, bismuth nitride, and a combination thereof. The insulating protective layer 230 is disposed to effectively protect the edge of the epitaxial structure E to avoid moisture and oxygen attack, and can effectively improve the product reliability of the overall light emitting device 100j. In particular, the insulating protective layer 230 in the present embodiment further covers the edges of the ohmic contact layer 210a and the reflective layer 220, so that the light-emitting element 100j can be reliably Better.

FIG. 11 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention. Referring to FIG. 11 and FIG. 10, the light-emitting element 100k of the present embodiment is similar to the light-emitting element 100j of FIG. 11, but the main difference is that the light-emitting element 100k of the present embodiment further includes a color mixing layer 240. It is disposed on the sheet-like wavelength conversion layer 180a. In the present embodiment, the color mixing layer 240 is composed of a transparent material such as glass, sapphire, epoxy or germanium, and the color mixing layer 240 has a thickness greater than 100 micrometers. That is, the thickness of the color mixture layer 240 is larger than the thickness of the epitaxial structure E plus the thickness of the sheet-like wavelength conversion layer 180a. Here, the arrangement of the thicker color mixing layer 240 can be regarded as a light guiding layer, and the light emitted by the epitaxial structure E and the light converted by the wavelength conversion layer 180a can be uniformly mixed, thereby effectively improving the uniformity of light emission of the entire light emitting element 100k. .

It should be noted that, in other embodiments not shown, the optical coupling layers 190c1, 190c2, 190c3, 190d, the chip-like wavelength conversion layers 180a, 180e, 180f, and the substrate may be selected as mentioned in the foregoing embodiments. 110g, the electrode connection layer 120h, the ohmic contact layer 210b, the reflective layer 220, the insulating protective layer 230, and the color mixing layer 240. Those skilled in the art can refer to the description of the foregoing embodiments, and select the foregoing components according to actual needs. Achieve the desired technical effect.

In summary, due to the light-emitting element of the present invention, the edge of the electrode connection layer is substantially aligned with the edge of the substrate. Therefore, the light-emitting element of the present invention can have a small volume as compared with the conventional light-emitting element in that the electrode of the light-emitting element is electrically connected to the pad of a larger carrier.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100a‧‧‧Lighting elements

110a‧‧‧Substrate

111‧‧‧ edge

112‧‧‧ upper surface

114‧‧‧ lower surface

116a‧‧‧ conductive vias

120a‧‧‧electrode connection layer

121‧‧‧ edge

122a‧‧‧first electrode

124a‧‧‧second electrode

126a‧‧‧Connection layer

130‧‧‧Insulation

140‧‧‧First type semiconductor layer

150‧‧‧Lighting layer

160‧‧‧Second type semiconductor layer

170‧‧‧ pads

E‧‧‧ epitaxial structure

Claims (20)

A light-emitting element comprising: a substrate having an upper surface and a lower surface opposite to each other; and a plurality of conductive vias penetrating the substrate and connecting the upper surface and the lower surface; an electrode connection layer disposed on the substrate Connecting the conductive vias on the upper surface, wherein the edge of the electrode connection layer is aligned with the edge of the substrate, and at least one space between each of the conductive vias and the electrode connection layer; an epitaxial structure And electrically connected to the electrode connection layer; and a plurality of pads disposed on the lower surface of the substrate and connecting the conductive vias. The illuminating device of claim 1, wherein the electrode connecting layer has at least one first electrode, at least one second electrode, and one disposed between the substrate and the first electrode and the substrate and the second a tie layer between the electrodes, wherein the edge of the tie layer is aligned with the edge of the substrate. The light-emitting device of claim 2, further comprising: an insulating layer disposed on the electrode connection layer and insulating the first electrode and the second electrode. The illuminating device of claim 3, wherein the epitaxial structure comprises: a first type semiconductor layer disposed on the insulating layer, wherein the first electrode passes through the insulating layer and the first type The semiconductor layer is electrically connected; a light emitting layer is disposed on the first type semiconductor layer; A second type semiconductor layer is disposed on the light emitting layer, wherein the second electrode is electrically connected to the second type semiconductor layer through the insulating layer, the first type semiconductor layer and the light emitting layer. The illuminating element of claim 4, further comprising: an ohmic contact layer disposed between the first type semiconductor layer and the insulating layer. The illuminating element of claim 5, wherein the ohmic contact layer is a patterned structure. The light-emitting element of claim 5, further comprising: a reflective layer disposed between the ohmic contact layer and the insulating layer. The illuminating element of claim 4, further comprising: an insulating protective layer disposed at an edge of the first type semiconductor layer, an edge of the luminescent layer, and an edge of the second type semiconductor layer, wherein the insulating The edge of the protective layer is aligned with the edge of the insulating layer. The light-emitting element of claim 1, further comprising: a piece of wavelength conversion layer disposed on the epitaxial structure, wherein an edge of the sheet-like wavelength conversion layer is aligned with an edge of the substrate. The light-emitting element of claim 9, wherein the epitaxial structure has a rough surface, and the rough surface has a micron-sized void between the sheet-like wavelength conversion layer. The light-emitting element according to claim 9, further comprising: an optical coupling layer disposed between the sheet-like wavelength conversion layer and the epitaxial structure. The light-emitting element of claim 11, wherein the light coupling The layer has a rough surface and has a micron-sized void between the rough surface and the sheet-like wavelength conversion layer or the epitaxial structure. The light-emitting element of claim 9, wherein the sheet-like wavelength conversion layer comprises at least two chip-shaped wavelength conversion unit layers, and a main light-emitting wavelength of the chip-shaped wavelength conversion unit layers is away from the epitaxial structure The direction is decreasing. The light-emitting element of claim 13, wherein the thickness of the sheet-like wavelength conversion unit layers are different. The light-emitting element according to claim 14, wherein the thickness of the sheet-like wavelength conversion unit layers is gradually increased in a direction away from the epitaxial structure. The light-emitting element of claim 9, further comprising: a color mixing layer disposed on the sheet-like wavelength conversion layer, wherein an edge of the color mixing layer is aligned with an edge of the sheet-like wavelength conversion layer. The light-emitting element according to claim 9, wherein the thickness of the sheet-like wavelength conversion layer is between 1.5 and 25 times the thickness of the epitaxial structure. The light-emitting element according to claim 1, wherein an orthographic structure of the epitaxial structure on the substrate is between 0.8 and 1 times an area of the upper surface of the substrate. The light-emitting element of claim 1, wherein the epitaxial structure has a thickness of between 3 micrometers and 15 micrometers. The illuminating device of claim 2, wherein the at least one first electrode is a plurality of first electrodes, the at least one second electrode is a plurality of second electrodes, and each of the first electrodes has a top view profile Shape, and each of the second electrodes has a top profile A combination of point and line.