JP2008288552A - Light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To elevate a light output efficiency of a light emitting device by reflecting light emitting from an edge of a semiconductor light emitting element efficiently. <P>SOLUTION: The light emitting device includes semiconductor light emitting elements where a first conductive type first semiconductor layer and second conductive type second semiconductor layer are located on a transparent substrate in order and a first electrode is located on the exposed portion of the first semiconductor layer and a second electrode is located on the second semiconductor layer respectively; and a supporting substrate 9 on which the semiconductor light emitting element are mounted. The light emitting element 100 is rectangular in plane view and has at least a first side and a second side different from the first side. The light emitted from the first side is stronger than the light emitted from the second side. Two or more semiconductor light emitting elements are mounted on the supporting substrate like a flip chip in line so that the first sides are faced approximately in parallel each other. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a light emitting device using a semiconductor light emitting element, and particularly to a light emitting device in which a plurality of semiconductor light emitting elements are mounted.

The semiconductor light emitting device is mounted on a support substrate, a package, or the like by various methods. A semiconductor light emitting device having positive and negative electrodes provided on the same surface side can take out light from the substrate side of the device by bonding the positive and negative electrodes side to a support substrate or the like for flip chip mounting. As a method of flip-chip mounting the semiconductor light emitting device, for example, first, bumps are formed on the conductor wiring provided on the main surface of the support substrate on which the semiconductor light emitting device can be placed, and then a pair of positive and negative is formed on the same surface side. The electrode surface of the semiconductor light emitting element provided with the electrode is opposed to the bump, both the positive and negative electrodes of the semiconductor element are brought into contact with the bump, and the conductor wiring and the electrode of the semiconductor light emitting element are joined. In this way, the conductor wiring of the support substrate and the positive and negative electrodes of the semiconductor light emitting element are joined via the bumps, and electrical conduction between them is achieved.

A plurality of semiconductor light emitting elements can be mounted on one light emitting device (for example, Patent Documents 1 to 4). An example is shown in FIG. In the light emitting device shown in FIG. 20, a circuit pattern 52 containing W, Ni and Au is formed on the surface of an Al ₂ O ₃ substrate 51 containing glass, and a total of 9 GaN in a 3 × 3 array. A system LED element 53 is flip-chip mounted on the circuit pattern 52 via Au bumps. Further, although the electrode structure of the GaN-based LED element 53 is omitted, it is provided corresponding to the circuit pattern 52.

In the light-emitting device in which the light-emitting element is flip-chip mounted in this way, most of the light generated in the light-emitting element is emitted from the substrate-side surface or side surface of the element. The light emitted from the end surface of the element side surface is normally reflected by a reflecting plate or the like provided in the light emitting device and extracted to the light emission observation surface side.

WO2004 / 082036 JP 2005-85548 A JP 2005-109434 A JP 2006-66700 A

  However, a part of the light emitted from the end face of the element is absorbed by the support substrate or the sealing resin before being reflected by the reflecting plate. For this reason, in the conventional light emitting device, the light from the element end face is attenuated before being extracted as the light of the light emitting device, and does not sufficiently contribute to the light emission of the entire light emitting device.

  Therefore, the present inventor has found that when mounting a plurality of semiconductor light emitting elements, the light from the element end face can be efficiently extracted by mounting the semiconductor light emitting elements in a row as a specific electrode structure. Has been reached.

  In order to solve the above-described problem, a light-emitting device of the present invention includes a first conductive type first semiconductor layer and a second conductive type second semiconductor layer provided in order on a light-transmitting substrate. A light-emitting device comprising: a semiconductor light-emitting element in which a first electrode is provided on an exposed portion of one semiconductor layer; a second electrode on a second semiconductor layer; and a support substrate on which the semiconductor light-emitting element is placed. The light emitting element is rectangular in plan view, has at least a first side and a second side different from the first side, and the light emitted from the element end surface on the first side is the first side. Two or more semiconductor light emitting elements are stronger than the light emitted from the element end face on the two sides, and the support substrate is flip-chip mounted in a row so that the first sides face each other substantially parallel to each other. The

In addition to the above-described configuration, the light-emitting device of the present invention can be combined with the following configurations.
(1) The first side of each semiconductor light emitting element faces the exposed portion and the opposite side of the first semiconductor layer on the first side side in the direction of the opposite side of the side, and the second side of the region. The area of the electrode is R ₁ , the length of the first side is L _1, and the second side is opposed to the exposed portion of the first semiconductor layer on the second side and the opposite side when viewed in the direction of the opposite side of the side. and opposite the sides, the area of the second electrode of the region _{R 2,} when the length of the second side was _{L 2,} the ratio _R 1 / _{L 1} of _{R 1} and _{L 1} is, _{R 2} and L less than ₂ ratio _R 2 / _{L 2.}
(2) The opposite side of the first side faces the exposed portion of the first semiconductor layer and the first side on the opposite side when viewed in the direction of the first side, and the area of the second electrode in that region the _{R 1',} when the length of the first side and the _{L 1',} the ratio _{R 1'/ L} 1'of _{R 1'and L 1'is} substantially equal to R 1 / _{L 1.}
(3) The second side is a side adjacent to the first side.
(4) The second electrode of each semiconductor light emitting element extends to the inside of the element from the first area, the first area between the first edge and the exposed area, and the inner area than the area. A first extension portion, and the first narrow portion is longer than the first extension portion in the length direction of the first side.
(5) The second electrode has a second extension on the second side, and the second extension constitutes the second electrode on the second side.
(6) The second electrode includes, on the second side, a second sandwiched area, and a second extension that extends to the inside of the element from the second sandwiched section. The ratio A ₁ / L ₁ between the length A ₁ of the first narrow area in the length direction and the length L ₁ of the _first side is the length of the second narrow area in the length direction of the second side. The ratio A ₂ / L ₂ between A ₂ and the length L ₂ of the second side is substantially equal to or larger than that.
(7) In the length direction of the second side, the second narrow area is shorter than the second extension.
(8) In plan view, the ratio S / L of the area S of the region sandwiched between one side of the semiconductor light emitting element, the opposite side of the side and the second semiconductor layer, and the length L of the side is , S ₁ / L ₁ of the first side is substantially equal to S ₂ / L ₂ of the second side.
(9) The ratio S / L between the area S of the region sandwiched between one side of the semiconductor light emitting element, the opposite side of the side, and the second semiconductor layer and the length L of the side in plan view is , S ₁ / L ₁ of the first side is smaller than S ₂ / L ₂ of the second side.
(10) The second side is a side different from the opposite side of the first side, and the first side and the opposite side of the first side have substantially the same S / L, and the second side and The opposite side of the second side also has substantially the same S / L.
(11) The second electrode is provided closer to the first side than the first electrode.
(12) The semiconductor light emitting element has a light emitting layer between the first semiconductor layer and the second semiconductor layer, and is between the exposed portion of the first semiconductor layer and the second semiconductor layer provided with the second electrode. The end face of the light emitting layer is exposed, the support substrate has a wiring electrode to which the first and second electrodes of the semiconductor light emitting element are connected, and the wiring electrode is at least the end face exposed portion of the light emitting layer in plan view. Is provided below.

  According to the light emitting device of the present invention, the light emitted from the end surface of each element can be efficiently reflected at the facing end surfaces of the plurality of semiconductor light emitting elements, and the light extraction efficiency of the light emitting device can be improved.

Embodiment 1
1, 2A, and 2B are schematic top views showing the semiconductor light emitting element 100 and the light emitting device 101 according to the present embodiment.

  In the semiconductor light emitting device 100 shown in FIG. 1, a first conductive type first semiconductor layer and a second conductive type second semiconductor layer are formed in this order on a translucent substrate, and a part of the first semiconductor layer is formed. Is exposed from the second semiconductor layer, and has a light emitting region 1 including a stacked structure of the second semiconductor layer and the first semiconductor layer in a plan view, and an exposed portion 2 that is an exposed region where the first semiconductor layer is exposed. . A second electrode 3 is provided on the surface of the second semiconductor layer in the light emitting region 1, and a first electrode 4 is provided on the surface of the first semiconductor layer in the exposed region 2, so that light can be emitted from the end face on each side. is there. The light emitted from the end surface on the first side 11 side of the semiconductor light emitting element 100 is stronger than the light emitted from the end surface on the second side 12 side.

  As shown in FIG. 2A, the semiconductor light emitting device 100 shown in FIG. 1 is flip-chip mounted on a support substrate 9 with first sides 11 arranged in a row so as to be substantially parallel to and opposite to each other. In the light emitting device 101 of FIG. 2, two light emitting elements 100 having the same structure are mounted side by side, and each element is connected to the conductor wirings 10a to 10c on the surface of the support substrate 9 through conductive members such as bumps. At this time, as shown in FIG. 2A, the external connection region 15 of the second electrode and the external connection region 16 of the first electrode of one element are connected to different conductor wirings.

With such a light emitting device 101, the light emitted from the end faces of the two light emitting elements can be efficiently reflected at the opposing end faces of the two light emitting elements, and light loss due to absorption into the support substrate is reduced. Therefore, the light extraction efficiency can be improved. That is, as shown in a conceptual diagram in FIG. 4, when a plurality of semiconductor light emitting elements are flip-chip mounted adjacent to each other so that the end faces of the elements face substantially parallel, light emitted from one end face of the light emitting element is reflected to the other. The light can be reflected from the end face of the element, and thus can be taken out to the light emission observation surface side, typically the translucent substrate side. In the light emitting device 101 of this embodiment, since the two elements are arranged so that the first side 11 having a stronger light emitted from the end face than the second side 12 faces each other, it is reflected by the facing element end faces. Thus, the light extracted to the emission observation surface side can be made stronger than the case where the second sides 12 face each other.

Specifically, the semiconductor light emitting element 100, as shown in FIG. 2B, the area R ₁ in the region indicated by downward-sloping diagonal lines is smaller than the area R ₂ in a region indicated by oblique lines rising to the right. The first side 11 of the semiconductor light emitting device 100 faces the exposed portion 2 and the opposite side 13 of the first semiconductor layer on the first side 11 side in the direction of the opposite side 13 of the side, and The second electrode 3 is indicated by a slanting line on the left side in FIG. 2B. The second side 12 faces the exposed portion 2 and the opposing side 14 of the first semiconductor layer on the second side 13 side in the direction of the opposing side 14 of the side, and the second electrode in the region. 3 is indicated by a diagonal line rising to the right in the element on the right side in FIG. 2B. Here, in the device for flip-chip mounting, typically the second electrode is provided over substantially the entire surface of the light emitting region, the shape and area of the second electrode emitting region becomes substantially equal, R ₁ described above , R ₂ , description of the second electrode and the light emitting region, such as a narrow portion and an extended portion, which will be described later, can be adopted for either the second electrode or the light emitting region.

As in the semiconductor light emitting device 100 shown in FIG. 2B, the area R ₁ in the region indicated by downward-sloping diagonal lines is smaller light emitting element than the area R ₂ in a region indicated by oblique lines rising to the right, small attenuation, as described below Light can be emitted from the end face on the first side 11 side, and the light reflected and extracted by the end face on the first side 11 side of each element can be strengthened. In the semiconductor light emitting device 100, the light emitting region 1 provided with the second electrode 3 emits light. Therefore, by reducing the area R ₁ in the region indicated by downward-sloping diagonal lines in FIG. 2B, the light emitted from the end face of the first side 11 is comprehensively reduce the distance that propagate in the device Can do. As a result, as shown in a conceptual diagram in FIG. 4, the amount of light absorbed in the element before being emitted from the end face on the first side 11 side is reduced, and the light emitted from the first side 11 side is reduced. Attenuation can be suppressed. On the other hand, since the light emitted from the end surface on the second side 12 side has a total propagation distance larger than the light emitted from the end surface on the first side 11 side, the second side 12 The light is easily absorbed in the element before being emitted from the side end face, and the attenuation tends to increase. Accordingly, as shown in FIG. 2B, in the area R ₁ in the region indicated by downward-sloping diagonal lines is smaller element than the area R ₂ in a region indicated by oblique lines rising to the right, from the end face of the first side 11 Attenuation of emitted light can be relatively suppressed, and a light-emitting device with improved light extraction efficiency can be obtained by arranging a plurality of light-emitting elements so that the end faces face each other.

In addition, the second electrode 3 of the semiconductor light emitting device 100 includes a first region 11 and sandwiched regions 6a and 6b sandwiched between the exposed portion 2 and an extended portion extending more inside the device than the sandwiched regions 6a and 6b. And 5. In other words, the light emitting region 1 of the semiconductor light emitting device 100 includes the linear independent portions 6a and 6b and the independent portions 6a and 6b arranged on the first side 11 side of the semiconductor light emitting device 100 in a planar view. And a connecting portion 5 to be connected. The length of the first side 11 in the side direction is the sum of the length A _a of the narrow area 6 _a and the length A _b of the narrow area 6 _b is longer than the length B of the extension 5. . In addition, the surface of each of the narrow areas 6 a and 6 b and the extension 5 is covered with the second electrode 3. On the other hand, on the side of the second side 12 adjacent to the first side, the light emitting region 1 is constituted by the extension portion 7.

  As in the semiconductor light emitting device 100 shown in FIG. 1, when the light emitting device is provided with the narrow portions 6a and 6b longer than the extending portion 5 on the first side 11 side facing the other devices, as described later, Small light can be emitted from the end face on the first side 11 side, and the light reflected and extracted by the end face on the first side 11 side of each element can be strengthened. The semiconductor light emitting element 100 shown in FIG. 1 emits light in the light emitting region 1 in which the second electrode 3 is provided. For this reason, by providing the narrow areas 6a and 6b of the second electrode 3 at a position close to the first side 11, the light absorbed in the element until it is emitted from the end surface on the first side 11 side. The attenuation of light emitted from the first side 11 side can be suppressed. On the other hand, the extension part 5 extends inside the element more than the narrow areas 6a and 6b, and the light generated in the extension part 5 is absorbed in the element before being emitted from the first side 11 side. The attenuation tends to be large. Therefore, as shown in FIG. 1, by making the lengths of the narrow areas 6 a and 6 b on the first side 11 side longer than the extension part 5, the light emitted from the end face on the first side 11 side Attenuation can be relatively suppressed, and a light emitting device with improved light extraction efficiency can be obtained by arranging a plurality of light emitting elements so that the end faces face each other.

The intensity of the light emitted from the end face is preferably larger on the first side than on the second side, which is different from the first side. That is, the planar view shape of the light emitting region and the distance to each side are The first side and the second side are preferably different. Hereinafter, the light emitting area on each side will be described in detail.

[Light emitting element and its light emitting area]
As described in Embodiment 1, the light-emitting element of the present invention has a specific structure in which a plurality of elements arranged adjacent to each other on a support substrate are arranged on opposite sides, that is, the second electrode on the first side. In particular, when the second side is a side that is not adjacent between the elements, the second side and the first side have a specific structure, so that a light emitting device with excellent light emission output is obtained. Is. The main configuration, the following first to third configurations, will be described below.

  The first configuration includes the first and second configurations described later depending on the structure of the element, that is, the first side and the light emitting region or the first side in the opposing direction of the first side. The size of the region facing the far end of the two electrodes, specifically, the light emitting region on the first side or the end facing the end on the first side of the second electrode, such as the first By designing the size of the area of the region sandwiched between the end on the opposite side of the side and the first side to have a specific structure, light having a light emission intensity suitable for the element adjacent to the first side The light can be emitted from the side. In addition, by combining the first configuration and a third configuration described later, a region S between a first side and a light emitting region end on the first side in a third configuration described later, The specific region in which the partial region of the second electrode on the first side is designed as desired by the difference between the first side in the configuration and the region of the second electrode end facing the first side end Depending on the structure, the above preferred light-emitting device can also be obtained. In addition, when comparing two or more sides, the area of each region is evaluated by standardizing the length of each side.

  In the second configuration, in the first side adjacent between the elements, the second electrode or the light emitting region has a specific structure, that is, a structure having a narrowed portion and an extension portion, which will be described later, particularly the first side. By designing the proportion of the light to the element, light having a light emission intensity suitable for adjacent to the element can be emitted from the first side.

  In the third configuration, the distance between the first side and the second electrode or the light emitting region is reduced, specifically, the end of the second electrode or the light emitting region on the first side (the first side). The distance between the first edge and the first edge can be made smaller than that of the second edge, and light having a light emission intensity suitable for adjoining the element can be emitted from the first edge.

  In the first configuration, as shown in FIG. 4, when viewed from the first side, the long-distance end is opposed to the light emitting region end (the short-distance end) on the first side. The rear side end, that is, the end (back side end) of the light emitting region on the side opposite to the first side end in the first side light emitting region is close to the end surface on the first side. Placed at a distance. However, the internal reflection surface of the light emitting region is arranged near the first side, so that the light from there can be increased. Further, as shown in FIG. 4, since there is internal light absorption due to repeated reflection inside the light emitting region on the first side, this can be suppressed by reducing the propagation distance inside the light emitting region. it can. That is, in the light emitting region on the first side, the distance from the back side end is reduced, the width of the light emitting region, and the distance between the end (first side side end and back side end). It is preferable to reduce the distance and the partial region of the light emitting region, and it is more preferable to satisfy all of them. Specifically, the first side facing the adjacent element, the side facing the outside of the adjacent element without facing the adjacent element, for example, the side facing the window part or the reflecting part of the light emitting device, for example, the second side In comparison with the side, the width, the distance, and the area of the adjacent side of the adjacent element (first side) are made smaller than those of the non-opposite side.

  Separately from the first configuration, as the third configuration described above, the distance from the light emitting region end on the first side, that is, the area of the region sandwiched between the first side and the light emitting region end is determined. By making it smaller, the light emitting region end serving as the light emitting end face can be arranged near the element end, and as shown in FIG. Light suitable for reflection can be emitted. Further, by using in combination with the first configuration, it is possible to obtain light emission with a suitable light emission output and reflection by an adjacent element, and as a result, a light emitting device excellent in light output can be obtained. In addition, the light intensity of each side is evaluated by the area of the entire side obtained by integrating the sandwiched area and other parts, the distance from the back end, for example, areas S and R described later. The same applies to the third configuration and the distance and area between the light emitting region and each side.

  As the structure for realizing the first configuration, the third configuration, and the respective modes related thereto, the above-described first embodiment and other embodiments, or a narrowing portion and an extension portion described later are provided on the first side. There is a structure provided in the light emitting region, whereby there is the second configuration. Specifically, the narrow area has a width / area of the light emitting area according to the first configuration and a distance between the rear side end and the first side as compared with other parts, for example, an extension. In the light emitting region on the first side, which is small, the sandwiched portion becomes a portion that emits strong light as compared with other portions, for example, the extended portion, and a light emitting element structure using this suitably, for example, The size, shape, distance to the first side, and the like are suitably designed. Hereinafter, the structure which concerns on the form of said each structure is demonstrated. Note that the first side facing the adjacent element or the second side that is different or non-opposing is described, but the present invention can also be applied to other sides of the element. Further, when three or more elements are arranged, and there are two or more adjacent elements, it is preferable that each opposing side is the first side.

(Light emitting area)
In addition to the length of the sandwiched area and the extension, the area of the light emitting area on each side according to the first configuration is different between the first side and the second side, so that from the end face The intensity of the emitted light can be changed. Specifically, in plan view, the area R of the region sandwiched between the end of the second electrode closest to one side of the element and the end of the second electrode closest to the end, The ratio R / L with the side length L is set so that R ₁ / L ₁ of the first side is smaller than R ₂ / L ₂ of the second side. As a result, in the entire light emitting region, the distance that the light generated in the light emitting region passes through the device before being emitted from the device end surface can be shorter on the first side than on the second side. It can be set as the element with the strong light radiate | emitted from the side.

(Distance between each side and light emitting area)
Moreover, as a form according to the third configuration, the amount of light reaching the other element end face adjacent to the light from the light emitting region can be increased by reducing the distance from the first side to the light emitting region. It is preferable that the distance to the light emitting region is substantially equal between the first side and the second side, or closer to the first side. Specifically, in plan view, one side is used as a reference. It is preferable that the area between the light-emitting area facing it is small. For example, the ratio S / L between the area S of the region sandwiched between the reference side and the light-emitting region arranged closer to or closer to the opposite side of the reference side and the length L of the side, it is preferably a _S 1 / _{L 1} of the first side substantially equal in the _S 2 / _{L 2} of the second side, or a small first sides towards _S 1 / _{L 1} of. Thereby, attenuation of the light emitted from the end face on the first side can be made substantially equal to or smaller than that on the second side to increase the amount of light.

  For example, the S / L of the first set composed of the first side and the opposite sides of the first side is smaller than the S / L of the second set of opposite sides different from the first set, and each set The sides inside can be S / L identical. That is, when the second side is a side different from the opposite side of the first side, the S / L in the opposite side of the first side and the first side is substantially the same, and the second side and the second side The elements having S / L substantially the same on the opposite sides of the first side can also be made, and the S / L of the first side can be made smaller than the S / L of the second side. At this time, the sides of each set have substantially the same S / L, and the element having such two sets of sides is preferably rectangular in plan view. Thus, by providing the distance to the light emitting region so that the first side and the opposite side are closer to each other than the different set, the light is emitted from the first side and the end surface on the opposite side. The degree of light attenuation can be made smaller than that of the different sets of sides, and the light emitted from the end face can be strengthened.

For example, in the element of FIG. 1, S / L is substantially equal between the first side 11 and the opposite side 13, and is substantially equal between the side 12 adjacent to the first side 11 and the opposite side 14. In FIG. 1, a region between the side 12 and the light emitting region opposed thereto, specifically, the side 12, and the light emitting region 1 disposed closer to the side 12 than the side 14 or the side 14 opposite to the side, The area sandwiched by is indicated by diagonal lines. On the first side 11 side and the opposite side 13 side, the end of the light emitting region 1 and each side coincide with each other, there is no region between the first side 11 and the light emitting region 1, and S / L is Since it is 0, in this example, the S / L of the first set is smaller than the S / L of the first set and the second set.

On the other hand, the S / L of the first set and the second set can be made substantially equal. As a result, the light emitting region is provided at an approximately equal distance from each side, and thus the element can be configured such that the intensity of light emitted from the end face on each side tends to depend on the shape of the light emitting region in plan view. Further, when S ₁ / L ₁ on the first side is an element smaller than S ₂ / L ₂ on the _second side, the first sides of the respective elements face each other as compared with the case where they are substantially equal. That is, the effect of increasing the light emission output as compared with the case where the second sides face each other can be increased.

Hereinafter, the structure which has the narrow area part and / or extension part which concern on the said 1st structure, and the structure which concerns on the form of each said structure are demonstrated.
(Length of the sandwiched area and extension)
In the structure according to the second configuration, the first side of the first region facing the adjacent element has the first electrode of the narrow region that emits relatively stronger light than the other part of the second electrode or the light emitting region. By increasing the proportion of the side, strong light can be emitted at the end of the element, and light suitable for reflection at the opposite side of the adjacent element, that is, at the end of the adjacent element, can be emitted. Specifically, as in the first embodiment, the ratio of the sandwiching area occupying the second electrode or the light emitting region in the first side is the width of the light emitting region according to the first configuration, and the back end portion. The distance and the area of each region are set to be larger than those of other portions having a small area, for example, an extension portion. Preferably, the proportion of the narrow area is not less than half of the length of the side, more preferably not less than 2/3. Here, the ratio of each part occupying each side is the ratio of the length of each part in the direction of the side (the narrowed area A and the extended part B) to the length L of each side, that is, the ratio occupied by the narrowed area [ A / L], a ratio [B / L] occupied by the extension part, and a ratio [(LA) / L] occupied by the other part (non-clamping part).

Further, in the comparison with the second side, the second side is specifically a side that does not face the adjacent element, and therefore, the sandwiched portion on the side different from the first side facing the first side and the first side Compare with the narrow area. The light emitting region on the second side has an extension and has a narrowed portion that is shorter in the length direction of the side than the extension, or the light emitting region on the second side in the extension is Consists of. Here, the ratio A / L between the length A of the narrow portion of the light emitting region and the length L of the side is such that A ₁ / L ₁ of the first side is greater than A ₂ / L ₂ of the second side. Larger is preferred. Thereby, the degree of attenuation of the light emitted from the second side is larger than that of the light emitted from the first side, and the intensity of the light emitted from the end surface is large on the first side. can do. Here, as in the device shown in FIG. 1, when the light-emitting region of the second side is formed by a extension, the length A ₂ of the narrow region part of the second side is zero. Further, the ratio A / B between the length A of the narrowed portion and the length B of the extended portion is such that A ₁ / B ₁ on the first side is larger than A ₂ / B ₂ on the _second side x. It is preferable.

On the other hand, the ratio A / L between the length A of the sandwiched area and the length L of the side is set so that A ₁ / L ₁ of the first side and A ₂ / L ₂ of the second side are substantially equal. It can also be formed. In this case, by making the width of the narrow area on the first side smaller than the width of the narrow area on the second side, the distance that the light generated in the narrow area passes through the element is relatively And the degree of attenuation of light emitted from the first side can be reduced. Here, in addition to the width of the second electrode or the light emitting region, the distance between the rear side end and each side, that is, the area R of the region sandwiched between the two, compares the first side with the second side. It can also be set as the structure made small.

(Opposite side of the first side)
Preferably, the opposite side of the first side is configured as follows. The opposing side of the first side faces the exposed portion of the first semiconductor layer and the first side on the side of the opposing side when viewed in the direction of the first side, and the area of the second electrode in that region is R _{1. ′} , _Where the length of the first side is L _{1 ′} , the ratio R _{1 ′} / L _{1 ′} between R _{1 ′} and L _{1 ′} is substantially equal to the above-mentioned R ₁ / L ₁ . Further, the second electrode on the opposite side of the first side has a narrowed portion and an extended portion like the first side, and the length of the narrowed portion in the opposite side is longer than the extended portion. Is also formed to be long. With these configurations, attenuation of light can be suppressed even at the end face on the opposite side, and strong light can be emitted, which is particularly preferable when other elements are also arranged on the opposite side. Further, as in the element shown in FIG. 1, if the shape of the light emitting region in plan view is the same on the first side and the opposite side, the intensity of light emitted from the end surface on the opposite side is set to the first side. It can be the same as the side.

(Second electrode on each side or each part and its arrangement)
The sandwiched area of the second electrode is a portion separated from the inside of the element or the second electrode on the opposite side by an exposed part that is an exposed area of the first semiconductor layer on each side, that is, depending on the exposed area or the like. The light emitting region is sandwiched between the separation part and each side, and the second electrode is also provided on the opposite side of the separation part. The narrow area on the first side is preferably arranged closer to the first side than the first electrode provided in the exposed area. As a result, as shown in FIG. 4, the narrow area portion can be provided close to the first side, and the light from the end face of the light emitting region is not blocked by the first electrode, and the first side. Can be taken out from. In order to extract light from the end face without being blocked by the electrode, it is preferable that the semiconductor layer end face on the first side or each side has at least a part of an exposed face from which light can be emitted. It is preferable that almost the entire surface is the light exit surface. Specifically, a structure exposed from a light-shielding metal, for example, a structure exposed from a reflective film or an electrode, or a structure covered with a light-transmitting protective film is preferable. When the light emitting layer is provided between the second semiconductor layer and the first semiconductor layer, it is preferable that at least the end face of the light emitting layer is exposed.

  The light emitting element is provided with an exposed portion of the first semiconductor layer having a first electrode region in which a first electrode is provided, and a light emitting region is provided in the remaining region. The exposed portion is a non-light emitting area. For this reason, as described above, the narrow portion and / or the extended portion are arranged on the first side or other side, and the suitable light emission is performed using the above-described first to third configurations and forms. An element structure is formed. On the first side, as described above, the light from the end face can be made suitable by having the narrowed portion, but at this time, the extended portion may not be provided. However, as described in the first and third configurations, when the distance from the first side or the area of the first side is reduced, the light emitting area becomes a narrow area or a small area. The region for external connection provided on the second electrode becomes small, or formation of the region becomes difficult. Therefore, the problem is solved by providing the extension part in combination with the narrow area part. That is, a region for external connection can be provided in the light emitting region inside the element connected by the extension, or the light emitting region disposed on the opposite side of each side across the exposed region and the first electrode region. . Thereby, it can be set as the structure which made high the ratio which occupies the suitable area | region part by the said 1st, 3 structure in the side by the said 2nd structure by the desired edge | side side, for example, the 1st edge side. In addition, by extending the light emitting region on the inner side of the element or on the opposite side through the extension, the ratio of the light emitting area in the element can be increased, and the current diffusibility, uniformity, and thereby the light emission uniformity, In order to improve efficiency, it is preferable to have an extension.

  A part of the narrow area is made wider than the other part, and a part of the area (S, R) of each area is increased to make the part a region for external connection. be able to. As described above, the sandwiched area may have a wiring region that is not externally connected and has a current diffusion or wiring structure and an external connection region that is externally connected. It is preferable to have at least a wiring region on the first side, and depending on the element dimensions and the like, the non-light emitting / light emitting region, the first electrode region and the exposed region in the region, the sandwiched region, and the respective regions and the extension Or other parts are formed. Here, the external connection region can have the function of the wiring region, and can also be provided in the extension. At this time, the external connection region can also constitute a narrowed portion of an adjacent side adjacent to the side of the extension portion. The non-light emitting region mainly includes an exposed region in which the first conductive type first semiconductor layer on the lower layer side is exposed, and a first electrode region provided in a part thereof. A substrate exposed region where the layer is exposed, a non-current injection portion such as a region where the second electrode is not formed on the second semiconductor layer of the second conductivity type, and a current blocking portion may also be included.

  The light emitting region of each side and each part thereof may be arranged through the semiconductor layer exposed region where no electrode is formed. As shown in the first embodiment, the end surface of each side is the end surface of the semiconductor layer of the light emitting region. Therefore, the distance between the element end surface and the light emitting region end surface, that is, the region (area S described later) can be set to 0, which is preferable. Since the exposed region of the outer peripheral portion of the element is formed by separation at the outer peripheral portion as shown in each embodiment described later, it is possible to prevent the element from leaking. In the case where the light emitting region is an element end face, the light emitting region is formed by separating the element in the light emitting region.

  In addition, in the exposed region where the first electrode is formed in the non-light emitting region such as the exposed region of the semiconductor layer, if the light emitting region is formed so as to surround the outer periphery thereof, the light emitting region constituting the outer peripheral portion is efficiently formed. Current can be injected or light can be emitted. In particular, when the second semiconductor layer is a p-type layer and the first semiconductor layer is an n-type layer, the current from the second electrode can be efficiently extracted from the entire periphery of the first electrode, which is preferable.

Hereinafter, each embodiment according to another example of the light emitting region in the present invention will be described with reference to FIGS. 5 to 11, the same members as those in FIGS. 1 to 3 are denoted by the same reference numerals. In either example, two elements having the same structure are flip-chip mounted on the support substrate so that the first sides face each other. Further, although the conductor wiring of the support substrate is omitted, it can be provided corresponding to each electrode of the element.

[Embodiment 2]
The light-emitting element shown in FIG. 5A used in the light-emitting device of Embodiment 2 has a structure having a light-emitting region inside the element and a light-emitting region outside the element. Compared to Embodiment 1, most of the light emitting region outside the element is provided on the first side and the opposite side, respectively, and the first side and the adjacent side of the first side The extension part of the opposite side is arrange | positioned at the both ends of the 1st side, the one part comprises an extension part, and it is further extended and the clamping part is provided. In addition, the light-emitting element shown in FIG. 5A has a line-symmetric structure, and its center line is parallel to the first side where the second electrode occupying more than half of the side length is provided or its adjacent side. The second electrode is provided with an external connection region on the adjacent side, a wiring region extending from the outer side to the inside of the device and having a narrower width than that, and a light emitting region on the first side and the opposite side. And the same separating portion on the adjacent side. The second electrode has an extension portion on the inner side from the end portion of the first side and is connected to the inner light emitting region, and an external connection region is provided in the extension portion or the sandwiching portion at both end portions. With the above structure, that is, by having a wide, large-area light emitting region, the light extracted to the axial front perpendicular to the surface of the semiconductor layer can be increased. Further, by having an outer light emitting region that is narrower and smaller in area than the inner light emitting region, end surface light emission suitable for element adjacent arrangement is realized.

In the light emitting device shown in FIG. 5A, the second electrode 3 of each semiconductor light emitting element also has sandwiched portions 8a and 8b and extended portions 7a and 7b on the second side 12 side adjacent to the first side 11. In the side direction of the second side 12, the sum of the length A _8a of the narrow area _8a and the length A _8b of the narrow area _8b is the length B _7a of the extension _7a and the length B _{7b of the} extension _7b. Is approximately equal to the sum of The lengths of the narrow areas 6a and 6b on the first side 11 side are longer than the lengths of the narrow areas 8a and 8b on the second side 12 side. Here, since the light-emitting element shown in FIG. 5A is substantially square, the ratio between the length A ₁ of the narrow areas 6 a and 6 b on the first side 11 side and the length L ₁ of the first side 11. A ₁ / L ₁ is larger than the ratio A ₂ / L ₂ of the length A ₂ of the narrow areas 8 a and 8 b on the second side 12 side and the length L ₂ of the second side 12. Further, the first side 11 and the second side 12 face the first semiconductor layer exposed portion 2 and each opposing side on each side in the direction of the opposing side of each side, and the second side of the region. The areas R ₁ and R ₂ of the electrode 3 are shown in FIG. 5B, respectively. Area R ₁ in the region indicated by downward-sloping diagonal lines in the element on the left _side, an area of a region indicated by oblique lines rising to the right in the right element is R _2, respectively R _1, R ₂ are about the area of the entire element 21%, about 49%. Here, since the element shown in FIG. 5B is substantially square in plan view, R ₁ / L ₁ is smaller than R ₂ / L ₂ . Thereby, the intensity | strength of the light radiate | emitted from the end surface of the 1st edge | side side can be made larger than the 2nd edge | side side. The term “substantially square” may be a square so long as the effects of the present invention can be obtained. Further, the opposite side of the second side 12 has the same shape as the second side 12 side.

[Embodiment 3]
The light-emitting element shown in FIG. 6A used in the light-emitting device of Embodiment 3 has an inner second electrode that is wider and has a larger area than the second embodiment. The width of the narrow area, which is a portion, and the area of each of the above areas are reduced. Thereby, the external connection region of the first electrode is provided in the extended portion of the first side connected to each part of the adjacent side and both ends of the opposite side, and the first side and the sandwiched area inside the opposite side And the extension is a wiring area. Thereby, the brightness | luminance of end surface emitted light can be raised in an outer side light emission area | region, and front brightness can be raised in an inner side light emission area | region.

The light emitting device shown in FIG. 6A is different from the light emitting device shown in FIG. 5A in the shapes of the second electrode 3 and the light emitting region 1 on the second side 12 side of each semiconductor light emitting element. In the semiconductor light emitting device of FIG. 6A, the lengths of the narrow areas 8a and 8b on the second side 12 side are longer than the extended parts 7a and 7b, and the narrow areas 6a and 6b on the first side 11 side. the length _{a 1} is approximately equal to the length _{a 2} of the second side 12 side narrow region part 8a and 8b, i.e., _{a 2} of _a 1 / _{L 1} of the first side 11 second side 12 / L is approximately equal to ₂ . However, on the first side 11 side and the second side 12 side, the width of the narrow portion on each side is different, and the width of the narrow portions 6a and 6b on the first side 11 side is the second side. It is smaller than the 12-side narrow areas 8a and 8b. Further, the first side 11 and the second side 12 face the first semiconductor layer exposed portion 2 and each opposing side on each side in the direction of the opposing side of each side, and the second side of the region. The areas R ₁ and R ₂ of the electrode 3 are shown in FIG. 6B. Area R ₁ in the region indicated by downward-sloping diagonal lines in the element on the left _side, an area of a region indicated by oblique lines rising to the right in the right element is R _2, respectively R _1, R ₂ are about the area of the entire element It accounts for 20% and about 33%. Here, since the element shown in FIG. 6B is substantially square in a plan view, R ₁ / L ₁ is smaller than R ₂ / L ₂ . For these reasons, the light emitted from the end face can be an element that is stronger on the first side than on the second side.

[Embodiment 4]
The light-emitting element shown in FIG. 7A used in the light-emitting device of Embodiment 4 has a light-emitting region structure in which each side has a sandwiched portion and an extended portion. The region is provided as an extension that connects adjacent sides to each other, and the extension is different in width in the opposing direction, and the wide light-emitting region is provided on the two adjacent sides facing each other. In addition, the first electrode is separated in the opposing direction of the adjacent sides in the second and third embodiments and arranged on each adjacent side. In the fourth embodiment, the first electrode is separated in the opposing direction of the first side. It has become. In addition, on the first side and the opposite side, the sandwiched area has a structure with different widths in the side direction, an external connection area is provided on the wide end, and the extension is Unlike forms 2 and 3, the inner one is lost and only the extension on the end side is provided. In this light emitting element, a narrowed portion is provided on the adjacent side, and the first electrode is separated from the side through the narrowed portion, so that the end surface light emission from the side is less than in the second and third embodiments. The structure becomes stronger, and the difference in emission intensity distribution between the adjacent side, the first side and the opposite side is small.

The light emitting device shown in FIG. 7A is provided so that the light emitting region of each semiconductor light emitting element surrounds the exposed region 2 and the first electrode 4 on the surface thereof. Further, the first side 11 and the second side 12 face the first semiconductor layer exposed portion 2 and each opposing side on each side in the direction of the opposing side of each side, and the second side of the region. The areas R ₁ and R ₂ of the electrode 3 are shown in FIG. 7B. In the left element, the area of the region indicated by the slanting right slant is R ₁ , and in the right element, the area of the region indicated by the slanting right slant is R ₂ , and R ₁ and R ₂ are each about the total area of the element. 22%, accounting for about 35%. Here, since the element shown in FIG. 7B is substantially square in a plan view, R ₁ / L ₁ is smaller than R ₂ / L ₂ . Thereby, the degree of attenuation of the light emitted from the first side can be made smaller than that of the second side when viewed in the entire light emitting region. Further, the R / L of the opposing sides of the first side 11 and the second side 12 is substantially equal to the R / L of the first side 11 and the second side 12, respectively.

[Embodiment 5]
The light emitting element shown in FIG. 8A used in the light emitting device according to the fifth embodiment has an external connection region of the second electrode provided in the inner light emitting region as compared with the fourth embodiment, and the first side and its opposite side. The outer second electrode on the side is narrowed to be a wiring region, a uniform width sandwiching area and extension are arranged, and on the adjacent side, the inner second electrode constitutes the extension. It has become. Further, the entire element has a structure in which a second electrode on the outer peripheral portion having the same width and a second electrode on the inner side are provided. Due to the uniform width of the narrow area portion, highly uniform end surface light emission is performed on the first side and the second side side, and on the other side, since the extension portion has the same width in the opposite direction, the end surface light emission is As compared with the fourth embodiment, the light emission difference between the first side and the opposite side and the adjacent side becomes larger, but the device is more uniform than the second and third embodiments.

FIG. 8A shows an example in which the above S / L is substantially equal on all sides. In the light emitting device of FIG. 8A, each semiconductor light emitting element is provided with an exposed portion 2 on the outer periphery and inside of the element, and the first electrode 4 is formed on the exposed portion 2 inside the element. In FIG. 8A, a region (its area S ₁ ) sandwiched between the first side 11 and the light-emitting region 1 disposed near the side 11 or the side opposite to the side is shown as a right-hand element. A region (its area S ₂ ) sandwiched between the second side 12 and the light emitting region 1 arranged nearer to the side 12 than the opposite side is indicated by a slanting line on the right side. Is shown by a diagonal line rising to the right. The element shown in FIG. 8A is substantially square, and S ₁ / L ₁ on the first side 11 is substantially equal to S ₂ / L _{2 on} the first side 12 as shown in FIG. 8A. In addition, since the first side 11 and the second side 12 have substantially the same S / L as the opposing sides, the S / L of all the sides is substantially the same. Thereby, it is easy to obtain an effect due to the shape of the light emitting region being different on each side. Further, the first side 11 and the second side 12 face the first semiconductor layer exposed portion 2 and each opposing side on each side in the direction of the opposing side of each side, and the second side of the region. The areas R ₁ and R ₂ of the electrode 3 are shown in FIG. 8B, respectively. Area R ₁ in the region indicated by downward-sloping diagonal lines in the element on the left _side, an area of a region indicated by oblique lines rising to the right in the right element is R _2, respectively R _1, R ₂ are about the area of the entire element 20%, about 45%. Here, since the element shown in FIG. 8B is substantially square in a plan view, R ₁ / L ₁ is smaller than R ₂ / L ₂ .

[Embodiment 6]
The light-emitting element shown in FIG. 9 used in the light-emitting device of Embodiment 6 has an asymmetric structure on the adjacent sides as compared with Embodiments 1 to 5, and the second electrode on one first side 11 side. The first electrode is disposed on the opposite side 13 side, and the first electrode has a wiring region at both ends and an external connection region on the inside. As in the second to fifth embodiments, the narrow portion and the extension portion are arranged on the adjacent side, and the extension portions are connected to each other and arranged on one end side of each adjacent side. Each part is configured. In this element, since the first side and the opposite side thereof are different from those of the first to fifth embodiments, the light emission difference is large. On the other hand, the first side and the adjacent sides at both ends thereof have a narrow portion and The difference in the proportion of the extended portion in each side is small. Similarly, the difference in the values (S / L, R / L) in the respective sides of the areas S and R of the respective regions is small, and the adjacent element is placed on each side. Even if arranged, a light emitting device with a small output difference can be obtained.

FIG. 9 shows an example in which there are three types of S / L values. Each semiconductor light emitting element of the light emitting device shown in FIG. 9 is substantially square in plan view. In FIG. 9, a region sandwiched between the opposite side 13 of the first side 11 and the light emitting region 1 disposed closer to the side 13 than the first side 11 or the side 11 is a slanting line with a lower right side in the left element. A region sandwiched between the second side 12 and the light-emitting region 1 disposed on the opposite side of the side or closer to the side 12 than the opposite side is indicated by a right-upward oblique line in the element on the right side. Such a region does not exist on the first side 11 side, and S / L is the smallest on the first side 11, then the second side 12 and its opposite side, and the opposite side of the first side 13 is the largest. As shown in FIG. 9, such an element is arranged so that the first sides 11 having the smallest S / L face each other. Further, the narrow area on the side 12 side can be made longer than the extended part so that the sides 12 face each other. Such a structure is particularly preferable when three or more elements are arranged.

[Embodiment 7]
In the example of FIG. 10A, the light-emitting element used in the light-emitting device of Embodiment 7 has a longer shape than those of Embodiments 1 to 6, and is opposed to adjacent sides in the element longitudinal direction as in Embodiments 2 and 3. The first electrode separated in the direction is arranged on each adjacent side, and the inner second electrode constitutes an extension of the first side and its opposite side, and becomes a common extension as in the fifth embodiment. Yes. In addition, as in the first embodiment, the narrow area portion is provided on the first side and the opposite side, and can be an element that emits more end face light than the adjacent side. The example of FIG. 11A is the same as the embodiment of FIG. 10A in the example of FIG. 10A described above. The difference is an asymmetrical direction, a longitudinal shape in the opposite direction of the adjacent side, and different structures on the adjacent side. As in the fourth aspect, in the side direction of the first side and the opposite side, a narrow area portion having a different width is provided, and an external connection area is provided in the wide narrow area portion. With the first side forming the long side, the side facing the adjacent element can be widened, and suitable light reflection by the adjacent element can be realized.

Further, as shown in FIGS. 10A and 11A, when a semiconductor light emitting element that is rectangular in plan view is used, if the first side facing the other element is made longer than the second side, stronger light is emitted from the first side. It is possible to emit light from the side of the element, and the area of the end face facing the adjacent element can be increased, so that stronger light can be reflected and taken out from the opposite end face, which is preferable. In addition, as shown in FIG. 11A, when the narrow area 6 on the first side 11 side is asymmetrical with the vertical bisector of the side 11 as an axis, one element is rotated 180 degrees. The end surfaces with weak emission intensity and the strong end surfaces can face each other, and the uneven distribution of light emission can be reduced.

In the elements of FIGS. 10A and 11A, the first side 11 and the second side 12 are respectively the first semiconductor layer exposed portion 2 and the opposite sides on the sides when viewed in the direction of the opposite sides of the sides. The areas R ₁ and R ₂ of the second electrode 3 in the region are shown in FIGS. 10B and 11B, respectively. In the left element, the area of the region indicated by the right-down oblique line is R ₁ , and in the right element, the area of the region indicated by the right-up oblique line is R ₂ . In FIG. 11, R ₁ is about 51% and R ₂ is about 63%. In FIG. 11B, R ₁ is about 51% and R ₂ is about 58%. Here, the ratio of the length of the first side 11 to the length of the second side 12 is equal between the element of FIG. 10B and the element of FIG. 11B, which is approximately 2: 1. Therefore, the element of FIG. R ₁ / L ₁ is about 26, R ₂ / L ₂ is about 63, and the element of FIG. 11B has R ₁ / L ₁ of about 26 and R ₂ / L ₂ of about 58, both of which R ₁ / L ₁ is It is smaller than R ₂ / L ₂ .

[Other Configurations and Forms of the Present Invention]
Hereinafter, the present invention and each configuration in each of the above embodiments will be described in detail.

(Second semiconductor layer, first semiconductor layer)
Examples of the first and first semiconductor layers include those using GaN and other semiconductors. When the semiconductor light emitting device is covered with a fluorescent material, a nitride semiconductor (In _X Al _Y Ga _1- XYN, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferable. Examples of the structure of the semiconductor layer include a homostructure having a MIS junction, a PIN junction, a pn junction, etc., a heterostructure, or a double hetero configuration. Various emission wavelengths can be selected depending on the semiconductor layer material and the mixed crystal ratio. In addition, a structure having a single quantum well structure or a multiple quantum well structure in which a semiconductor active layer is formed in a thin film that generates a quantum effect between the second semiconductor layer and the first semiconductor layer in the light emitting region can be used. . In the case of using a nitride semiconductor, a material such as sapphire, spinel, SiC, Si, ZnO or the like is preferably used for the growth substrate of the semiconductor layer, and in order to form a nitride semiconductor with good crystallinity with high productivity. It is preferable to use a sapphire substrate.

The first conductivity type semiconductor layer is exposed by removing a part of the second conductivity type semiconductor layer, and a region where the first conductivity type semiconductor layer that does not contribute to light emission of the light emitting element is exposed. By reducing and relatively increasing the region of the second conductivity type semiconductor layer, the light extraction efficiency of the light emitting element can be improved. Moreover, when the light emitting layer provided between the semiconductor layers of the first and first conductivity type layers is exposed on the first side, attenuation of light emitted from the first side can be suppressed, which is preferable. .

(Second electrode, first electrode)
The second electrode is typically provided as a current diffusion electrode for spreading the current input to the light emitting element over the entire surface of the second conductivity type semiconductor layer in the second conductivity type semiconductor layer. The second electrode is preferably provided on substantially the entire surface of the second conductivity type semiconductor layer. In particular, when the second conductivity type semiconductor layer is a p-type layer, it is preferable to have such a structure because the current hardly spreads in the in-plane direction. A pedestal electrode on the second conductivity type layer side connected to a conductive member such as a bump can be provided on the second electrode. The first electrode is provided on the surface of the first conductivity type semiconductor layer as a pedestal electrode connected to a conductive member such as a bump.

  The second electrode and the first electrode are formed by an evaporation method or a sputtering method after exposing the first conductive type semiconductor layer by a method such as etching. In the present embodiment, the second electrode is preferably made of a material that reflects light from the light emitting element toward the light transmissive substrate of the light emitting element. For example, Ag, Al, Rh, Rh / Ir can be mentioned. In addition, an oxide conductive film such as ITO (complex oxide of indium (In) and tin (Sn)), ZnO, or a metal thin film such as Ni / Au is formed as a translucent electrode on the entire surface of the p-type semiconductor layer. Can be made. In addition, the second electrode is formed with a thickness that allows the element to emit light even in a narrow portion such as a narrow portion, and a film thickness of, for example, about 100 nm to 1 μm is selected.

(Semiconductor light emitting device)
The semiconductor light-emitting element of the present invention has a first side that is disposed at least in the light-emitting device and faces each other between elements that are adjacent to each other. However, it is preferably a polygon, more preferably two sides of the first side and its opposite side, further three sides of the first side and its adjacent side, More preferably, they are polygons having these four sides, and further quadrilaterals, for example, parallelograms and trapezoids. As a preferable quadrilateral, specifically, a rectangular shape such as a square or a rectangle in plan view is used. The first side facing the other element is preferably a side (square) or a long side (rectangular) having the same length as compared to the other side, particularly the adjacent side. The end face capable of reflecting light can be enlarged, and the effects of the present invention can be easily obtained. In addition, it is possible to adopt a form in which the lengths of the first sides are different between adjacent elements, a form in which only a part of the sides is opposed, or the like. Thus, it is preferable that it is a form facing directly, so that suitable reflection by an adjacent element is made. In addition, the first sides of the adjacent elements can be inclined to face each other in an intersecting direction, but light emission in the inclined direction may increase the light emission and may deteriorate the directivity. Preferably, they are substantially parallel to each other.

  As the dimensions of the light emitting element of the present invention, since the desired second electrode and the light emitting region having the above-mentioned respective regions or the sandwiched portion, the extended portion, or the like are provided on the first side, the area of the structure portion is required. Specifically, the thickness is 300 μm or more. In addition, the first side and the opposite side or adjacent side also have a desired second electrode and light emitting region structure, for example, the extension portion, the narrow portion, the first electrode region, the outer side and the inner side of the element. An even larger area is required to provide the second electrode. Specifically, the thickness is preferably 600 μm or more, and the upper limit is usually selected to be about several mm. By reducing the distance between the plurality of semiconductor light emitting elements, it can be efficiently reflected between the end faces facing each other. Specifically, it is preferably about 200 μm or less. Moreover, it is also possible to make it the length of the first side or less, or 20% or less of the length of the first side. The lower limit is determined by the mounting accuracy of the element, and can be, for example, several tens of μm or more.

  By using a light-transmitting substrate such as sapphire as the growth substrate, light can be extracted from the growth substrate, and the growth substrate is thinned by polishing, etc. Light can be easily extracted from the surface. At this time, since the thickness of the semiconductor layer laminated on the growth substrate is usually as thin as about several μm, it is preferable to leave the growth substrate at least as thick as the semiconductor layer, for example, about 10 μm to 500 μm, and further 50 μm. It can be set to a range of about ~ 200 μm.

(Support substrate)
As the support substrate in the present embodiment, a member for fixing and supporting a flip-chip mounted light-emitting element having a conductor wiring on a surface facing the electrode of the light-emitting element can be used. Furthermore, when the support substrate is electrically connected to the lead electrode, the conductor wiring is provided by the conductive member from the surface facing the light emitting element to the surface facing the lead electrode. The material of the support substrate is preferably the same as that of the light-emitting element, for example, aluminum nitride for nitride semiconductor light-emitting elements, and thereby the influence of the thermal stress generated between the support substrate and the light-emitting element is reduced. Can be relaxed. Alternatively, silicon that can be provided with the function of an electrostatic protection element and is inexpensive can be used. In addition, a printed circuit board provided with a circuit to which a plurality of elements are connected, a mounting substrate in a window portion, a recess portion, or the like of the light emitting device may be used.

(Conductor wiring)
As the metal used as the material of the conductor wiring, Au, silver which is a white metal, or the like is used. A silver-white metal having a high reflectance is preferable because light from the light-emitting element is reflected in a direction opposite to the support substrate and the light extraction efficiency of the light-emitting device is improved. Here, the metal used as the material of the conductor wiring is preferably selected in consideration of good adhesion between the metals, so-called wettability. For example, when an electrode of an LED chip containing Au is bonded by ultrasonic die bonding via an Au bump, the conductor wiring is made of Au or an alloy containing Au.

FIG. 3 shows patterns of conductor wirings 10a to 10c according to the light emitting device of FIG. 2A. In the support substrate 9 shown in FIGS. 2A and 3, the first conductor wiring 10 a is provided at a position facing the second electrode 3 of one light emitting element. Similarly, the second conductor wiring 10 b is It is provided in a region facing the second electrode 4 of the other light emitting element. Furthermore, a third conductor wiring 10c is provided that electrically connects the first electrode 4 of one light emitting element and the second electrode 3 of the other light emitting element, and connects both elements in series. Here, each element has an end portion of the semiconductor layer exposed from a light-shielding member such as an electrode so that light can be emitted, and the surface of the support substrate facing the end portion is provided with the first electrode 4 of each element. A part of the second conductor wiring 10b and the third conductor wiring 10c to be joined is extended and provided. As a result, as shown in FIG. 4, light leaking from the first and second electrodes can be reflected by the conductor wiring in the first and second electrodes in a plan view. In particular, as shown in FIG. The light flux of the light emitting device can be further increased by the extending wiring portion. In particular, when a material that easily absorbs light from a light emitting element such as aluminum nitride is used as the material of the support substrate, a high effect can be obtained. The conductor wiring is preferably provided so as to cover between the two elements.

  In addition, as shown in FIG. 2A, the pattern of the conductor wiring connected to the first electrode 4 is provided so as to coincide with the pattern of the second electrode 3, specifically, the first pattern mainly inside the element in a plan view. In the second electrode adjacent to one electrode, it is preferable that the second electrode overlaps with the conductor wiring and the respective end portions substantially coincide with each other. Further, when using an element in which the end face of the light emitting layer is exposed between the exposed portion of the first semiconductor layer and the second semiconductor layer provided with the second electrode, the wiring electrode is at least in plan view. It is preferable to be provided under the end face exposed portion of the light emitting layer. Accordingly, as shown in FIG. 4, the conductor wiring that connects the light leaking from between the second electrode 3 and the first electrode 4 to the first electrode 4 by the wiring portion extending from the end portion of the first electrode. And the area of the conductor wiring connected to the second electrode 3 can be increased. At this time, it is preferable that the conductor wiring is provided extending in the second electrode direction outside adjacent to the first electrode end portion in plan view.

In FIG. 2A, the conductor wiring provided corresponding to the exposed portion of the semiconductor layer of each element is a conductor wiring connected to the first electrode, but may be a conductor wiring connected to the second electrode. When the area of the first electrode is smaller than that of the second electrode as in the element shown in FIG. 1, if the conductor wiring connected to the second electrode is extended to a position corresponding to the exposed portion of the semiconductor layer, the first electrode The area of the conductor wiring to be connected is reduced, and a higher accuracy is required for the connection between the electrode and the conductor wiring. Also, as shown in FIG. In order to reach this light, a pattern as shown in FIG. 2A is preferable.

(Light emitting device)
In the light-emitting device of this embodiment, a plurality of semiconductor light-emitting elements are mounted on a support substrate, and each element is disposed so that the first sides face each other substantially in parallel. Thereby, it can reflect efficiently between the end surfaces which a some element faces, and the light extraction efficiency of a light-emitting device can be improved. In the light emitting device shown in FIG. 2A, two light emitting elements are connected in series, but may be connected in parallel. When parallel connection is used, conductor wiring is simplified and heat dissipation can be improved as compared to the case of serial connection. In the light-emitting device of the present invention, each element can be face-up mounted or flip-chip mounted with the electrode forming surface side as the light emitting surface side and the opposite surface side as the mounting surface side. It is particularly preferable to use flip chip mounting, and by using flip chip mounting that extracts light from the growth substrate side, light reflected by light emission from the upper surface of the light emitting region in face-up mounting is emitted from the end surfaces of the substrate and the element. This is because the ratio of the above is larger than that of face-up mounting, and reflection by the adjacent element can be preferably used.

In each of the above-described examples, a case where a plurality of semiconductor light-emitting elements having the same light-emitting region shape is arranged is shown. As a result, portions having the same intensity of emitted light can face each other, and since the lengths of the first sides are the same, the light can be efficiently reflected between the facing end surfaces. On the other hand, light emitting elements having different second electrode shapes, element sizes, and the like can be arranged side by side. Similarly, in this case, the elements are arranged in a row so that the first sides of the elements face each other substantially in parallel. .

  In the present embodiment, a metal material called a bump can be used as the conductive member that joins the electrode of the semiconductor light emitting element and the conductor wiring of the support substrate. A gap generated between the mounted light-emitting elements can be sealed with a light-transmitting resin layer. Examples of the material for the resin layer include silicon resin and epoxy resin. Moreover, it is preferable that the resin layer which seals between elements is optically connected continuously so that between elements may be constructed. If the interface between the resin layer and another member is between the elements, the light emitted from the end face of one element will be refracted or reflected at the interface of the resin layer, making it difficult to reach the other end face of the adjacent element. is there. Moreover, a phosphor can be contained in a resin layer that seals between elements and the upper surface of the element to form a wavelength conversion member. The wavelength conversion member contains a phosphor that absorbs at least a part of light from the light emitting element and emits light having a different wavelength.

The light emitting device according to this example is shown in FIG. 12A. The light-emitting device 201 in this embodiment is formed by flip-chip mounting two semiconductor light-emitting elements having the same structure on the same support substrate 29 by bumps. Each element is connected to the conductor wirings 210a to 210c on the surface of the support substrate 29 so that the first sides 211 face each other substantially in parallel. At this time, as shown in FIG. 12A, the external connection region 215 of the second electrode and the external connection region 216 of the first electrode of one element are connected to different conductor wirings.

The light-emitting element in this example is an element that is substantially square in a plan view with each side of about 1 mm, and an n-type semiconductor layer and a p-type semiconductor layer are formed on a translucent substrate 220 for semiconductor layer growth. A light emitting region 21 including a stacked structure is provided, and a p electrode 23 is provided as a second electrode on the surface of the p type semiconductor layer, and n is provided as a first electrode on the surface of the exposed region 22 including the n type semiconductor layer exposed from the p type semiconductor layer. Electrodes 24 are provided respectively. The p-electrode 23 has narrow portions 26a and 26b and an extension 25 on the first side 211 side of the element, and the length of the first side 211 in the side direction is the narrow portions 26a and 26b. Is about 330 μm in total and about 660 μm in total, and the extension portion 25 is about 244 μm, and the lengths of the sandwiched portions 26 a and 26 b are longer than the extension portion 25. Further, as shown in FIG. 12B, in the right element, R ₂ indicated by a diagonal line rising to the right is equal to the entire area of the light emitting region, and therefore, R ₁ indicated by a diagonal line falling right in the left element is more than R ₂ . Is also small. Specifically, the R / L at the first side 211 and the opposite side 213 is about 0.29 mm ² / mm, respectively, and the R / L at the second side 212 and the opposite side 214 is about 0. 41 mm ² / mm.

On the other hand, only the extension 27 is disposed on the second side 212 adjacent to the first side 211. Further, the ratio of the area S of the region sandwiched between one side and the light-emitting region disposed closer to the one side or the opposite side of the one side and the length L of the side S / L is about 0.12 mm ² / mm first side 211 and the opposing side 213, respectively, and about 0.24 mm ² / mm second side 212 and the opposing side 214, respectively, a first side 211 and the opposite side 213 are smaller than the second side 212 and the opposite side 214, that is, in the light emitting region 21, the first side 211 is closer to the second side 212. . The planar view shape of each semiconductor layer and electrode in this example is 180-degree rotationally symmetric with respect to the square center of the element, and is a line with the center line parallel to the first side or the second side as the axis of symmetry. Symmetric. The distance between the two elements is about 100 μm.

The light emitting element in this example uses a nitride semiconductor light emitting element having an In _0.3 Ga _0.7 N semiconductor as an active layer and a dominant wavelength of 455 nm. The light-emitting element can be formed by forming a nitride semiconductor on the sapphire substrate by MOCVD, and an n-type nitride semiconductor layer doped with Si on the sapphire substrate via a buffer layer, An active layer having a multiple quantum well structure in which a plurality of GaN layers as a barrier layer and a set of InGaN layers as a well layer are stacked, and a p-type nitride semiconductor layer doped with Mg are sequentially stacked.

  In the light emitting device of this example, the p-type nitride semiconductor layer, the active layer, and a part of the n-type nitride semiconductor layer are removed by etching to expose the surface of the n-type nitride semiconductor layer. Each surface of the p-type nitride semiconductor layer and the n-type nitride semiconductor layer is exposed on the same surface side of the semiconductor. Further, in the outer peripheral portion of the element, each semiconductor layer is removed to expose the surface of the translucent substrate. A p-electrode 23 made of Ni, Ag, Ti, or Pt is provided on almost the entire surface of the p-type nitride semiconductor layer. By setting it as such an electrode, the electric current which flows through the p electrode 23 spreads over the wide range of a p-type contact layer, and the luminous efficiency of a semiconductor light-emitting device can be improved. Also, by making the p electrode a reflective electrode, the light from the light emitting element can be reflected by the p electrode 23 and emitted from the sapphire substrate side, improving the light extraction efficiency from the flip chip mounted light emitting element. Can be made. Further, a p-side pedestal electrode made of Au, Rh, Pt, and Ni is provided on the surface of the p electrode 23, and Al—Si—Cu is formed on the surface of the n-type nitride semiconductor layer layer 22. An n-electrode 24 made of an alloy, W, Pt, Au, or Ni is provided. Here, the number of steps for forming the electrode can be reduced by forming the p-side pedestal electrode and the n-electrode at the same time and forming them at the same time. Furthermore, an insulating protective film made of silicon oxide is formed so as to cover the surface of each electrode and the semiconductor layer. The protective film has an opening at the bump bonding position of the p electrode and the n electrode.

  As shown in FIG. 12A, the support substrate 29 used in the present embodiment is provided with conductor wirings 210a to 210c made of Au on an aluminum nitride plate, and the p-electrode 23 of the light-emitting element and Au via Au bumps. The n electrode 24 side is joined. Furthermore, the area of the conductor wiring in the region facing the p-electrode 23 of the light-emitting element is larger than the area of the region facing the n-electrode 24. In addition, the light emitting element in this example is one in which two elements are connected in series. Of the conductor wiring, the area of the region facing the positive electrode of the light emitting element is larger than the region facing the negative electrode of the light emitting element, and the number of bumps to be mounted is also increased. The conductor wiring shown in FIG. 12A includes a first conductor wiring 210a corresponding to the p-electrode 23 of one light-emitting element, a second conductor wiring 210b corresponding to the n-electrode 24 of the other light-emitting element, There is provided a third conductor wiring 210c that electrically connects the n-electrode 24 and the p-electrode 23 of the other element and connects both elements in series. Further, a silicon resin containing a YAG phosphor is screen-printed as a wavelength conversion member so as to cover the light emitting element. The wavelength conversion member covers the upper surface and the side surface of the light emitting element, and is filled between the two elements. The support substrate can be mounted on a package and connected to an external electrode through a conductive wire to form a light emitting device.

  Here, as Comparative Example 1, as shown in FIG. 13, a light emitting device similar to that of Example 1 is manufactured except that the second sides 212 of the semiconductor light emitting elements are arranged to face each other. The luminous fluxes of the light emitting devices according to Example 1 and Comparative Example 1 are each about 700 mA current, 228.2 lm in Example 1, 220.7 lm in Comparative Example 1, and the luminous flux of the light emitting device of Example 1 is obtained. Is improved by about 3.4%. Regarding the light emission intensity distribution, the light emission intensity between the end faces facing each other of the light emitting elements is stronger in Example 1 than in Comparative Example 1, and the light emitted from the element end faces is adjacent to the light emitting device of this example. The light can be efficiently reflected between the elements, and the luminous flux of the light emitting device can be improved.

FIG. 14 is a schematic top view showing a semiconductor light emitting element according to Example 2, and FIG. 15A is a top view schematically showing an upper surface appearance of the light emitting device according to Example 2. In the light emitting device 301 in this embodiment, two semiconductor light emitting elements having the same structure are flip-chip mounted in a row on the conductor wirings 310a to 310c of the same support substrate 39, and the light emitting device in Embodiment 1 is mounted. The shape of the light emitting region of the semiconductor light emitting element is different. Further, the portion of the conductor wirings 310a to 310c that is connected to the negative electrode is provided to extend to a position facing the end of the light emitting layer between the positive and negative electrodes of the light emitting element. 33 substantially coincides with the end portion on the n-electrode 34 side. Further, as shown in FIG. 15A, the external connection region 315 of the second electrode and the external connection region 316 of the first electrode of one element are connected to different conductor wirings.

The light-emitting element of this example shown in FIG. 14 is an element that is substantially square in a plan view with each side of about 1 mm. An n-type semiconductor layer and a p-type are formed on a translucent substrate 320 for semiconductor layer growth. It has a light emitting region 31 including a stacked structure with a semiconductor layer, a p electrode 33 as a second electrode on the surface of the p type semiconductor layer, and a first electrode on the surface of the exposed region 32 including the n type semiconductor layer exposed from the p type semiconductor layer. An n-electrode 34 is provided as one electrode. The p-electrode 33 has a narrowed portion 36 and extensions 35a and 35b on the first side 311 side of the element. The length of the first side 311 in the side direction is approximately equal to that of the narrowed portion 36. 704 μm and the extension portions 35 a and 35 b are about 111 μm each, which is about 222 μm in total, and the length of the narrow area portion 36 is longer than the extension portions 35 a and 35 b. The light emitting region 31 has an opening, and an n-electrode 34 is provided on the surface of the exposed region 32 exposed in the opening.

On the other hand, on the side of the second side 312 adjacent to the first side 311, in addition to the extension portions 37 a to 37 d, sandwiching portions 38 a to 38 c are arranged. In the side direction of the second side 312, the lengths of the extensions 37 a and 37 d are about 80 μm, the lengths of the extensions 37 b and 37 c are 228 μm, and the lengths of the narrow areas 38 a and 38 c are about 58 μm, respectively. The length of the region 38b is about 194 μm. Therefore, the total length of the narrow portions 38a to 38c is about 310 μm, which is smaller than the total length of about 616 μm of the extension portions 37a to 37d. Further, as shown in FIG. 15B, in the right element, R ₂ indicated by a diagonal line rising to the right is equal to the entire area of the light emitting region, and therefore R ₁ indicated by a diagonal line falling right in the left element is more than R ₂ . Is also small. Specifically, the R / L at the first side 311 and the opposite side 313 is about 0.26 mm ² / mm, respectively, and the R / L at the second side 312 and the opposite side 314 is about 0.1. 43 mm ² / mm. Moreover, S / L is about 0.082 mm < ² > / mm in any side, and is substantially equal.

  As Comparative Example 2, as shown in FIG. 16, a light emitting device similar to that of Example 2 is manufactured except that the semiconductor light emitting elements are arranged so that the second sides 312 face each other. The luminous fluxes of the light emitting devices according to Example 2 and Comparative Example 2 are 240.4 lm in Example 2 and 235.6 lm in Comparative Example 2 at a current of about 700 mA, respectively. The luminous flux is improved by about 2%. Thus, by using the light emitting device of this embodiment, the luminous flux of the light emitting device can be improved.

FIG. 17 is a schematic top view showing a semiconductor light emitting element according to Example 3, and FIG. 18A is a top view schematically showing an upper surface appearance of the light emitting device according to Example 3. The light emitting device 401 in this embodiment is formed by flip-chip mounting two semiconductor light emitting elements having the same structure on the conductor wirings 410a to 410c of the same support substrate 49 in a row. The shape of the light emitting region of the semiconductor light emitting element to be mounted is different. Similarly to Example 2, the portions of the conductor wirings 410a to 410c that are connected to the negative electrodes are provided to extend to positions facing the light emitting layer end portions between the positive and negative electrodes of the light emitting elements. The portion substantially coincides with the end portion of the p-electrode 43 on the n-electrode 44 side. Further, as shown in FIG. 18A, the external connection region 415 of the second electrode and the external connection region 416 of the first electrode of one element are connected to different conductor wirings.

The light-emitting element of this example shown in FIG. 17 is an element that is substantially square in a plan view with sides of about 1 mm, and an n-type semiconductor layer and a p-type are formed on a translucent substrate 420 for semiconductor layer growth. A light emitting region 41 having a stacked structure with a semiconductor layer is provided. A p electrode 43 is formed as a second electrode on the surface of the p type semiconductor layer, and a surface of the exposed region 42 including the n type semiconductor layer exposed from the p type semiconductor layer is formed. An n-electrode 44 is provided as one electrode. The p-electrode 43 has narrow portions 46a to 46c and extended portions 45a to 45d on the first side 411 side of the element, and the length of the first side 411 in the side direction is the narrow portion 46a. The total of .about.46c is about 552 .mu.m, and the total of the extension portions 45a to 45d is about 372 .mu.m, and the length of the narrow zone portions 46a to 46c is longer than the extension portions 45a to 45d. The light emitting region 41 has an opening, and an n-electrode 44 is provided on the surface of the exposed region 42 exposed in the opening.

On the other hand, on the second side 412 side, extension portions 47a to 47c and sandwiching portions 48a and 48b are arranged. In the side direction of the second side 412, the total length of the sandwiched areas 48 a and 48 b is about 408 μm, which is smaller than the total length of about 516 μm of the extension parts 47 a to 47 c. Further, as shown in FIG. 18B, in the right element, R ₂ indicated by a diagonal line rising to the right is equal to the entire area of the light emitting region, and therefore, R ₁ indicated by a diagonal line falling right in the left element is more than R ₂ . Is also small. Specifically, the R / L at the first side 411 and its opposite side 413 is about 0.42 mm ² / mm, respectively, and the R / L at the second side 412 and its opposite side 413 is about 0.00. 51 mm ² / mm. Moreover, S / L is about 0.071 mm < ² > / mm in any side, and is substantially equal. When two such light emitting devices according to Example 3 were arranged side by side, that is, when the four light emitting elements were arranged in a line, the luminous flux was about 476.8 lm at a current of about 650 mA.

  As Comparative Example 3, as shown in FIG. 19, a light emitting device similar to that of Example 3 is manufactured except that the semiconductor light emitting elements are arranged so that the second sides 412 face each other. When the light flux is compared between the light emitting devices of Example 3 and Comparative Example 3, the light flux is higher in Example 3.

FIG. 1 is a schematic plan view showing a semiconductor light emitting device according to an embodiment of the present invention. FIG. 2A is a plan view schematically showing an upper surface appearance of the light emitting device according to the embodiment of the present invention. FIG. 2B is a plan view schematically showing a region (its areas R ₁ and R ₂ ) of the light emitting device according to the embodiment of the present invention. FIG. 3 is a schematic plan view showing the support substrate according to the embodiment of the present invention. FIG. 4 is a conceptual diagram for explaining the present invention. FIG. 5A is a schematic plan view showing a light emitting device according to an embodiment of the present invention. FIG. 5B is a plan view schematically showing a region (its areas R ₁ and R ₂ ) of the light emitting element according to the embodiment of the present invention. FIG. 6A is a schematic plan view showing the light emitting device according to the embodiment of the present invention. FIG. 6B is a plan view schematically showing a region (its areas R ₁ and R ₂ ) of the light emitting element according to the embodiment of the present invention. FIG. 7A is a schematic plan view showing the light emitting device according to the embodiment of the present invention. FIG. 7B is a plan view schematically showing a region (its areas R ₁ and R ₂ ) of the light emitting element according to the embodiment of the present invention. FIG. 8A is a schematic plan view showing the light emitting device according to the embodiment of the present invention. FIG. 8B is a plan view schematically showing a region (its areas R ₁ and R ₂ ) of the light emitting device according to the embodiment of the present invention. FIG. 9 is a schematic plan view showing a light emitting device according to an embodiment of the present invention. FIG. 10A is a schematic plan view showing the light emitting device according to the embodiment of the present invention. FIG. 10B is a plan view schematically showing a region (its areas R ₁ and R ₂ ) of the light emitting element according to the embodiment of the present invention. FIG. 11A is a schematic plan view showing a light emitting device according to an embodiment of the present invention. FIG. 11B is a plan view schematically showing a region (its areas R ₁ and R ₂ ) of the light emitting device according to the embodiment of the present invention. FIG. 12A is a plan view schematically showing the upper surface appearance of the light emitting device according to Example 1 of the invention. FIG. 12B is a plan view schematically showing a region (its areas R ₁ and R ₂ ) of the light emitting element according to the embodiment of the present invention. FIG. 13 is a plan view schematically showing the upper surface appearance of the light emitting device according to Comparative Example 1 of the present invention. FIG. 14 is a schematic plan view showing a semiconductor light emitting element according to Example 2 of the present invention. FIG. 15A is a plan view schematically showing the upper surface appearance of the light emitting device according to Example 2 of the invention. FIG. 15B is a plan view schematically showing a region (its areas R ₁ and R ₂ ) of the light emitting element according to the embodiment of the present invention. FIG. 16 is a plan view schematically showing the upper surface appearance of the light emitting device according to Comparative Example 2 of the present invention. FIG. 17 is a schematic plan view showing a semiconductor light emitting element according to Example 3 of the invention. FIG. 18A is a plan view schematically showing the upper surface appearance of the light emitting device according to Example 3 of the invention. FIG. 18B is a plan view schematically showing a region (its areas R ₁ and R ₂ ) of the light emitting device according to the embodiment of the present invention. FIG. 19 is a plan view schematically showing the upper surface appearance of the light emitting device according to Comparative Example 3 of the present invention. FIG. 20 is a plan view schematically showing the upper surface appearance of a conventional light emitting device.

Explanation of symbols

1, 2, 31, 41 Light-emitting region 2, 22, 32, 42 Exposed part 3 Second electrode 4 First electrode 5, 5a, 5b, 25, 35a, 35b, 45a to 45d Extension part 6, 6a, 6b, 6c , 6d, 26a, 26b, 36, 46a to 46c Narrow part 7, 7a, 7b, 7c, 27, 37a to 37d, 47a to 47c Second side extension parts 8, 8a, 8b, 8c, 38a to 38c, 481, 48b Second side-side sandwiched areas 9, 29, 39, 49 Support substrates 10a-10c, 210a-210c, 310a-310c, 410a-410c Conductor wiring 11, 211, 311, 411 First Sides 12, 212, 312, 412 Second side 13, 213, 313, 413 First side opposing sides 14, 214, 314, 414 Second side opposing sides 15, 215, 315, 415 Second electrode of Part connection region 16, 216, 316, 416 First electrode external connection region 100 Semiconductor light emitting device 101, 201, 301, 401 Light emitting device 23, 33, 43 P electrode 24, 34, 44 N electrode 220, 320, 420 Transparent Optical substrate 51 Al ₂ O ₃ substrate 52 Circuit pattern 53 GaN-based LED element

Claims (13)

A first conductive type first semiconductor layer and a second conductive type second semiconductor layer are provided in this order on a translucent substrate, and a first electrode is formed on the exposed portion of the first semiconductor layer, and a second semiconductor layer is formed on the second semiconductor layer. A light-emitting device comprising: a semiconductor light-emitting element provided with a second electrode; and a support substrate on which the semiconductor light-emitting element is placed,
The semiconductor light emitting element is rectangular in a plan view, and has at least a first side and a second side different from the first side,
The light emitted from the element end face on the first side is stronger than the light emitted from the element end face on the second side,
A light-emitting device that is flip-chip mounted in rows on the support substrate such that two or more semiconductor light-emitting elements and the first sides face each other substantially in parallel. The first side of each semiconductor light emitting element faces the exposed portion of the first semiconductor layer and the opposing side on the first side side in the direction of the opposing side of the side, and the area of the second electrode and R _1, the length of the first side and L _1,
The second side faces the exposed portion of the first semiconductor layer on the second side and the opposing side when viewed in the direction of the opposing side of the side, and the area of the second electrode in the region Is R ₂ and the length of the second side is L ₂ ,
_2. The light emitting device according to claim _{1, wherein} a ratio R ₁ / L ₁ of R ₁ and L ₁ is smaller than a ratio R ₂ / L ₂ of R ₂ and L ₂ . The opposite side of the first side faces the exposed portion of the first semiconductor layer and the first side on the opposite side when viewed in the direction of the first side, and the second side of the region is the second side. When the area of the electrode is R _{1 ′} and the length of the first side is L _{1 ′} ,
The light emitting device according to claim 2, wherein a ratio R _{1 ′} / L _{1 ′} between R _{1 ′} and L _{1 ′} is substantially equal to the R ₁ / L ₁ .   The light emitting device according to claim 1, wherein the second side is a side adjacent to the first side. The second electrode of each of the semiconductor light emitting elements is on the first side, on a first sandwiched portion sandwiched between the first side and the exposed portion, and on the inner side of the device than the sandwiched portion. An extended first extension,
5. The light-emitting device according to claim 1, wherein in the length direction of the first side, the first narrow portion is longer than the first extension portion.   The light emitting device according to claim 5, wherein the second electrode has a second extension portion on the second side, and the second electrode on the second side is configured by the second extension portion. . The second electrode has, on the second side, a second sandwich portion, and a second extension portion that extends to the inside of the element from the second sandwich portion,
The ratio A ₁ / L ₁ between the length A ₁ of the first narrow portion and the length L ₁ of the _first side in the length direction of the first side is the length direction of the second side The light-emitting device according to claim 5, wherein a ratio A ₂ / L ₂ of a length A ₂ of the second sandwiched area and a length L ₂ of the second side is substantially equal to or larger than the ratio A ₂ / L ₂ .   The light-emitting device according to claim 7, wherein the second narrow portion is shorter than the second extension portion in the length direction of the second side. In a plan view, the ratio S / L of the area S of the region sandwiched between one side of the semiconductor light emitting element, the opposite side of the side and the second semiconductor layer, and the length L of the side is:
The light emitting device according to claim 1, wherein S ₁ / L ₁ of the _first side is substantially equal to S ₂ / L ₂ of the second side. In a plan view, the ratio S / L of the area S of the region sandwiched between one side of the semiconductor light emitting element, the opposite side of the side and the second semiconductor layer, and the length L of the side is:
The light emitting device according to claim 1, wherein S ₁ / L ₁ of the _first side is smaller than S ₂ / L ₂ of the second side. The second side is a side different from the opposite side of the first side,
The opposite sides of the first side and the first side have substantially the same S / L, and the opposite sides of the second side and the second side also have the same S / L. The light emitting device according to claim 9 or 10. The light emitting device according to claim 1, wherein the second electrode is provided closer to the first side than the first electrode. The semiconductor light emitting device includes a light emitting layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer provided with the exposed portion of the first semiconductor layer and the second electrode; Between, the end face of the light emitting layer is exposed,
The support substrate has a wiring electrode to which the first and second electrodes of the semiconductor light emitting element are connected;
The light emitting device according to any one of claims 1 to 12, wherein the wiring electrode is provided at least under an end surface exposed portion of the light emitting layer in a plan view.

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