TWI569696B - Method of manufacturing circuit board and chip package and circuit board manufactured by using the method - Google Patents
Method of manufacturing circuit board and chip package and circuit board manufactured by using the method Download PDFInfo
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- TWI569696B TWI569696B TW102124493A TW102124493A TWI569696B TW I569696 B TWI569696 B TW I569696B TW 102124493 A TW102124493 A TW 102124493A TW 102124493 A TW102124493 A TW 102124493A TW I569696 B TWI569696 B TW I569696B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
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Description
本發明係有關於包含有空腔及晶片封裝之電路板的製造方法及裝置連同其實施例,及藉由所述製造方法製成之電路板。 The present invention relates to a method and apparatus for fabricating a circuit board including a cavity and a chip package, together with embodiments thereof, and a circuit board produced by the manufacturing method.
本申請案在此聲明以2012年10月19日提出申請之韓國專利申請第10-2012-0116744號案及2013年2月26日提出申請之韓國專利申請第10-2013-0020670號案主張優先權,該等申請之全部內容已合併於本說明中作為參考。 The Korean Patent Application No. 10-2012-0116744 filed on October 19, 2012, and the Korean Patent Application No. 10-2013-0020670 filed on Feb. 26, 2013, is hereby incorporated by reference. The entire contents of these applications have been incorporated herein by reference.
由於電子裝置的零件及尺寸近年來不斷的縮小,而使用者又偏號具有多功能的產品,導致電子裝置的零件數量增加。由是,引起對能以高密度安裝大量電子零件之電路板製造技術之需求。 As the parts and dimensions of electronic devices have been shrinking in recent years, and users have versatile products, the number of electronic devices has increased. As a result, there is a demand for circuit board manufacturing technology capable of mounting a large number of electronic components at high density.
多層電路板為電子裝置中的一種元件,其係堆積多數的基板所形成的多層體,各層上裝有電子零件。由於多層電路板較單側邊的電路板或雙側邊的電路板可具有 電氣上更複雜的功能,而且可高密度安裝電子零件,多層電路板係廣泛應用於各種電子裝置。 A multi-layer circuit board is an element in an electronic device, which is a multi-layered body formed by stacking a plurality of substrates, and electronic components are mounted on each layer. Since the multilayer circuit board has a single side circuit board or a double side circuit board, Electrically more complex functions, and high-density mounting of electronic components, multilayer circuit boards are widely used in a variety of electronic devices.
特別是近年來有一種系統整合技術的需求,藉以製成輕、薄、短、小的電子產品,更有一種製造空腔印刷電路板(PCB)技術的系統整合技術,引人注目。在空腔型PCB中,由於其零件並非完全埋入PCB,而係埋入形成於晶片安裝方向的空腔內,如此,更換零件或點檢零件時埋入於空腔者遠較埋入PCB內者更為方便有效。 In particular, in recent years, there has been a need for system integration technology to make light, thin, short, and small electronic products, and a system integration technology for manufacturing cavity printed circuit board (PCB) technology, which is attracting attention. In a cavity type PCB, since the parts are not completely buried in the PCB, they are buried in the cavity formed in the direction in which the wafer is mounted, so that when the parts are replaced or the parts are inspected, the holes are buried in the cavity far more than the buried PCB. The insider is more convenient and effective.
然而,多層技術卻很少應用於空腔型PCB。此係由於想要精準的形成空腔有所困難,而在電鍍或蝕刻PCB的過程中可能損及空腔內的電路所致。 However, multilayer technology is rarely used in cavity-type PCBs. This is due to the difficulty of accurately forming the cavity, which may damage the circuit in the cavity during the process of plating or etching the PCB.
特別是,在藉由於堆積有已完成零件的PCB上實施雷射鑽孔時,由於調整深度有其困難,內部電路圖形與內部絕緣層可能常常受損。同時藉由使用起槽機形成空腔時,由於其過程上的精準度有很大的差異,空腔需要個別形成,於大量生產的場合產品可靠度可能降低,而且由於生產性低落,以致不易大量生產。同時,藉由鑽孔器欲精準地在成品的空腔內鑽孔將不能避免地對空腔外壁造成傷害。對空腔外壁造成傷害的結果,將造成濕氣的吸收而引起積層的崩潰及對空腔底面的傷害。由於鑽孔治具的製造成本使整體的製造成本增加,而空腔的設計寬度卻很小。當空腔形成且絕緣層積層前已堆積零件時,由於熱硬 化性樹脂的流動不易控制,致容易產生黏污,並須額外進行去污工作。同時由於完全清除黏污有所困難,因此基板的可靠性降低而大量生產能力亦降低。 In particular, when laser drilling is performed on a PCB on which a completed part is stacked, the internal circuit pattern and the internal insulating layer may often be damaged due to difficulty in adjusting the depth. At the same time, when the cavity is formed by using the slotting machine, the cavity needs to be formed separately due to the great precision in the process, and the product reliability may be lowered in the case of mass production, and it is difficult to be productive due to low productivity. Mass production. At the same time, the borehole is inevitably damaged by the borehole in the cavity of the finished product. As a result of damage to the outer wall of the cavity, it will cause absorption of moisture and cause collapse of the laminate and damage to the underside of the cavity. Due to the manufacturing cost of the drilling jig, the overall manufacturing cost is increased, and the design width of the cavity is small. When the cavity is formed and the parts are stacked before the insulation layer is laminated, due to the hard heat The flow of the resin is not easy to control, resulting in easy sticking and additional decontamination work. At the same time, since it is difficult to completely remove the stain, the reliability of the substrate is lowered and the mass production capacity is also lowered.
茲有一或數實施例提供以低成本簡單製造電路板及晶片封裝的方法,及藉由此方法製造電路板。 One or more embodiments provide a method of simply manufacturing a circuit board and a chip package at low cost, and fabricating the circuit board by this method.
依據典型實施例,所提供之電路板的製造方法包含:準備一基板,該基板包含一芯層及形成於芯層至少一表面上並含有一內部電路圖形的第一導電層;形成一組合材料用以覆蓋第一導電層;在組合材料內至少形成一空腔,經此空腔曝露芯層及第一導電層;藉由固化其中至少有一空腔的該組合材料形成一疊片體;及形成具有一外部電路圖形之第二導電層於該疊片體之一外表面上。 According to an exemplary embodiment, a method of manufacturing a circuit board provided includes: preparing a substrate comprising a core layer and a first conductive layer formed on at least one surface of the core layer and containing an internal circuit pattern; forming a composite material Covering the first conductive layer; forming at least one cavity in the composite material, exposing the core layer and the first conductive layer through the cavity; forming a stack of sheets by curing the composite material having at least one cavity therein; and forming A second conductive layer having an external circuit pattern is on one of the outer surfaces of the laminate.
組合材料可包含一矩陣,其中的結構體係經浸漬,而矩陣則包含有B級的熱硬化性樹脂。 The composite material may comprise a matrix in which the structural system is impregnated and the matrix comprises a grade B thermosetting resin.
形成疊片體時可包含施加熱以完成B級之熱硬化性樹脂的交連,並獲得C級之熱硬化性樹脂。 The formation of the laminated body may include applying heat to complete the crosslinking of the B-grade thermosetting resin, and obtaining a C-grade thermosetting resin.
B級之熱硬化性樹脂的重量可以小於C級之熱硬化性樹脂的重量。 The weight of the B-grade thermosetting resin may be less than the weight of the C-grade thermosetting resin.
在形成組合材料的製造過程溫度可能低於固化組合材料製造過程中的溫度。 The temperature during the manufacturing process in which the composite material is formed may be lower than the temperature during the manufacture of the cured composite material.
至少一空腔的的形成可包含使用濕式蝕刻,以 去除組合材料曝露於一藉由使用一種溶液以形成至少一空腔時的部份。 The formation of the at least one cavity may comprise using a wet etch to The removal composition is exposed to a portion that is formed by using a solution to form at least one cavity.
該溶液可包含一玻璃蝕刻劑。 The solution can comprise a glass etchant.
芯層可用與形成疊片體相同的材料來形成。 The core layer can be formed of the same material as the laminated body.
組合材料可包含形成於而面對基板之組合材料外表面上金屬層。 The composite material can comprise a metal layer formed on an outer surface of the composite material facing the substrate.
在形成至少一個空腔前,前述製造方法可更包含去除金屬層的一部份,其中形成至少一個空腔。 The foregoing method of manufacturing may further include removing a portion of the metal layer, wherein at least one cavity is formed, prior to forming the at least one cavity.
依照另一實施例的形態,其中提供一使用上述方法製造的電路板。 According to another embodiment, there is provided a circuit board manufactured using the above method.
依照另一實施例的形態,其中提供一種晶片封裝的製造方法,該方法包含:準備一基板,其包含一芯層及第一導電層形成於芯層的至少一表面上,且包含一內部電路圖型;形成一組合材料,用以覆蓋第一導電層;於組合材料內形成至少一個空腔,經該空腔曝露該芯層與該第一導電層;藉由固化其中具有至少一個空腔的組合材料而形成一疊片體;形成第二導電層,其包含一外部電路圖形於疊片體的一外表面上;並安裝一半導體晶片於該至少一個空腔內,同時將該半導體晶片與第一及第二導電層中之至少一個做電氣性連接。 According to another embodiment, there is provided a method of fabricating a wafer package, the method comprising: preparing a substrate comprising a core layer and a first conductive layer formed on at least one surface of the core layer and including an internal circuit diagram Forming a composite material to cover the first conductive layer; forming at least one cavity in the composite material, exposing the core layer and the first conductive layer through the cavity; by curing at least one cavity therein Combining materials to form a stack of sheets; forming a second conductive layer comprising an external circuit pattern on an outer surface of the laminated body; and mounting a semiconductor wafer in the at least one cavity while the semiconductor wafer is At least one of the first and second conductive layers is electrically connected.
組合材料可包含一矩陣,其中的結構體係經浸漬,而矩陣則包含B級的熱硬化性樹脂。 The composite material may comprise a matrix in which the structural system is impregnated and the matrix comprises a grade B thermosetting resin.
形成疊片體時可包含施加熱以完成B級中熱硬化性樹脂的交連,並獲得C級的熱硬化性樹脂。 The formation of the laminated body may include applying heat to complete the crosslinking of the thermosetting resin in the B-stage, and obtaining a C-grade thermosetting resin.
在B級的熱硬化性樹脂重量可以小於在C級的熱硬化性樹脂重量。 The weight of the thermosetting resin in the B grade may be less than the weight of the thermosetting resin in the C grade.
至少一個空腔之形成可包含使用濕式蝕刻,以去除組合材料曝露的部份,該部份藉由使用一種溶液以形成至少一個空腔。 The forming of the at least one cavity may comprise using a wet etch to remove exposed portions of the composite material by using a solution to form at least one cavity.
100‧‧‧基板 100‧‧‧Substrate
115‧‧‧芯層 115‧‧‧ core layer
120‧‧‧導電層 120‧‧‧ Conductive layer
121‧‧‧內部電路圖型 121‧‧‧Internal circuit pattern
200‧‧‧電路板 200‧‧‧ boards
210‧‧‧組合材料 210‧‧‧Combined materials
211‧‧‧矩陣 211‧‧‧Matrix
212‧‧‧結構體 212‧‧‧ Structure
214‧‧‧玻璃纖維 214‧‧‧glass fiber
215‧‧‧疊片體 215‧‧‧ laminated body
216‧‧‧矽基填充料 216‧‧‧矽 base filler
220‧‧‧金屬層 220‧‧‧metal layer
221‧‧‧外部電路圖型 221‧‧‧External circuit pattern
223‧‧‧部份 223‧‧‧Parts
30、31、32‧‧‧半導體晶片 30, 31, 32‧‧‧ semiconductor wafers
35‧‧‧連接線 35‧‧‧Connecting line
300、300a‧‧‧晶片封裝 300, 300a‧‧‧ chip package
CV‧‧‧中空腔 CV‧‧‧ hollow cavity
上述及其他實施態樣將可藉由各例示具體實施例之詳細說明與附加圖示而更加清楚明白,其中:第1、2、5、6、7及9圖為依照本發明各實施例之說明電路板製造方法的斷面圖;第3圖為本發明一實施例中第2圖之組合材料的詳細說明圖;第4圖為本發明一實施例中說明熱硬性樹脂依照溫度模塑的曲線圖;第8圖為本發明一實施例中說明電路板製造方法每週期的溫度過程曲線圖;及第10圖及第11圖為本發明各實施例中說明利用晶片封裝製造方法所製造之晶片封裝的斷面圖。 The above and other embodiments will be more apparent from the detailed description of the exemplary embodiments and the accompanying drawings, wherein: Figures 1, 2, 5, 6, 7, and 9 are in accordance with embodiments of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 3 is a detailed explanatory view of a composite material of FIG. 2 in an embodiment of the present invention; and FIG. 4 is a view showing molding of a thermosetting resin according to temperature in an embodiment of the present invention. FIG. 8 is a graph showing a temperature history of a circuit board manufacturing method per cycle according to an embodiment of the present invention; and FIG. 10 and FIG. 11 are diagrams illustrating a method of manufacturing a wafer package according to an embodiment of the present invention; A cross-sectional view of the wafer package.
由於本發明觀念上容許變化多端的多種實施 形態,茲就特定典型實施例以文字說明圖面並提供詳細的敘述。但是如此並非意圖限制發明概念於特定的使用範圍,而係表示凡不脫離本發明概念的精神與技術範圍之所有變更,設備及代用品,均包含於本發明中。在此之實施例的說明,其屬於傳統相關技術之詳細說明而可能非必要性導致對本發明概念之精義產生模糊者,均予以省略。 Because the present invention conceptually allows for a variety of implementations In the form of a specific exemplary embodiment, the drawings are illustrated and detailed descriptions are provided. However, it is not intended to limit the scope of the invention to the specific scope of the invention, and all modifications, devices and substitutes are included in the present invention without departing from the spirit and scope of the invention. The description of the embodiments herein is a detailed description of the related art and may not be necessary to cause a ambiguity in the meaning of the present invention.
於此所使用之專有名詞係僅以說明特定實施例為目的而使用,並非意圖限制本發明概念者。本文中所用單數格式〝一個〞與〝該〞乃意圖包含複數格式,但文意中有明白指定者除外。應進一步明瞭者,用詞〝包含〞及/或〝含有〞,乃特指所敘述之特徵、整體、步驟、操作、構件、成份、及/或群體,但並不排除一或多個其他特徵、整體、步驟、操作、構件、成份、及/或群體的存在或加入。 The singular terms used herein are used for the purpose of describing particular embodiments, and are not intended to limit the inventive concept. The singular forms used herein are intended to include the plural and the singular and It should be further understood that the term "including" and / or "including" includes the features, integers, steps, operations, components, components, and/or groups described, but does not exclude one or more other features. The existence or addition of the whole, steps, operations, components, ingredients, and/or groups.
本文中使用之措詞〝及/或〞包含任何及所有一或多個聯合列舉項目的組合。如先行於諸元件列舉有〝至少一個〞之表示,即為指稱所有列舉的元件,而非限於列舉的個別元件。 The phrase 〝 and/or 使用 used herein includes any and all combinations of one or more of the associated listed items. To the extent that the elements are recited in the singular, at least
茲參照所附圖式進一步詳細說明本發明之實施形態。為圖式之清晰度,各種積層的厚度及範圍經予放大以便使圖面更加清楚。部份積層的厚度及範圍特別予以放大以便於圖面之說明。 Embodiments of the present invention will be described in further detail with reference to the accompanying drawings. For the clarity of the drawings, the thickness and extent of the various layers are enlarged to make the surface clearer. The thickness and extent of some of the laminates are specifically enlarged to facilitate the description of the drawings.
第1、2、5、6、7及9圖為依照本發明各實施例 說明電路板製造方法的斷面圖。第3圖為第2圖之組合材料210的詳細說明圖。第4圖為依照本發明一實施例說明熱硬化性樹脂是否可依照溫度模塑的曲線圖。第8圖為依照本發明一實施例說明電路板製造方法每週期的製造過程溫度曲線圖。 1, 2, 5, 6, 7, and 9 are diagrams in accordance with various embodiments of the present invention A cross-sectional view illustrating a method of manufacturing a circuit board. Fig. 3 is a detailed explanatory view of the composite material 210 of Fig. 2. Fig. 4 is a graph showing whether a thermosetting resin can be molded in accordance with temperature according to an embodiment of the present invention. Figure 8 is a graph showing the temperature of the manufacturing process per cycle of the method of manufacturing a circuit board in accordance with an embodiment of the present invention.
參照第1圖,茲準備一基板100。 Referring to Fig. 1, a substrate 100 is prepared.
基板100為電路板的一部份,其中形成一用於傳達電氣信號之內部電路圖形121。基板100包含一含有形成於芯層115雙表面各面的內部電路圖形121之導電層120。 The substrate 100 is part of a circuit board in which an internal circuit pattern 121 for communicating electrical signals is formed. The substrate 100 includes a conductive layer 120 including internal circuit patterns 121 formed on the surfaces of both surfaces of the core layer 115.
芯層115係由與疊片體215(參照第7圖)相同的材料所形成,將在下文中說明。詳言之,芯層115即如疊片體215,包含一完全固化之熱硬化性樹脂。 The core layer 115 is formed of the same material as the laminated body 215 (refer to Fig. 7), which will be described later. In particular, the core layer 115, such as the laminate 215, comprises a fully cured thermosetting resin.
導電層120可包含一導電性材料如銅(Cu)或銀(Ag),但本實施形態並不限定如此。導電層120可藉由篩網印花或滾壓塗佈方式形成於芯層115的雙表面各面。 The conductive layer 120 may include a conductive material such as copper (Cu) or silver (Ag), but the embodiment is not limited thereto. The conductive layer 120 may be formed on each of the double surfaces of the core layer 115 by screen printing or roll coating.
內部電路圖形121可藉由多種圖形印製法形成,例如一種包含遮覆法之減損方法及一平板/模型法,也可採用一種加厚法包含半加(SAP)法,修正半加(MSAP)法,高級修正半加(AMSAP)法,及全加(FAP)法等。簡言之,減損方法係選擇性地從導電層120去除導電體以外之不必要部份,以便形成電路板,而加厚法乃選擇性地利用於芯層115上電鍍以澱積導電物質,以便形成一電路圖形,均為眾 所周知者,因此本文中並不做詳細描述。第1圖表示藉由遮覆法形成內部電路圖形121所得的結果。 The internal circuit pattern 121 can be formed by various graphic printing methods, such as a method including a masking method and a flat/model method, or a thickening method including a half-add (SAP) method, and a modified half-add (MSAP) method. Law, Advanced Amendment Half Addition (AMSAP) method, and Full Addition (FAP) method. In short, the subtractive method selectively removes unnecessary portions other than the electrical conductor from the conductive layer 120 to form a circuit board, and the thickening method selectively utilizes plating on the core layer 115 to deposit a conductive material. In order to form a circuit pattern, all are public Well known, so it is not described in detail in this article. Fig. 1 shows the results obtained by forming the internal circuit pattern 121 by the masking method.
在基板100內可形成貫通孔或穿孔以經由形成於芯層115上方與下方的內部電路圖形121供應電氣。雖然第1圖說明了2個內表面施有電鍍的貫通孔,但貫通孔之數量與形狀並非僅如此限定。基板100的厚度、材質、形狀及結構並不限定於以上所描述者,並可根據需要變更。 Through holes or perforations may be formed in the substrate 100 to supply electrical via the internal circuit patterns 121 formed above and below the core layer 115. Although FIG. 1 illustrates the through holes through which the two inner surfaces are plated, the number and shape of the through holes are not limited as such. The thickness, material, shape, and structure of the substrate 100 are not limited to those described above, and may be changed as needed.
參照第2圖,組合材料210形成於基板100上。 Referring to FIG. 2, a composite material 210 is formed on the substrate 100.
當製造多層電路板時,組合材料210將導電層 120自金屬層220絕緣(參照第9圖)。組合材料210包含一結構體212(參照第3圖)及一矩陣211(參照第3圖),其中結構體212係經過浸漬。 When manufacturing a multilayer circuit board, the composite material 210 will have a conductive layer 120 is insulated from the metal layer 220 (refer to Fig. 9). The composite material 210 includes a structure 212 (see FIG. 3) and a matrix 211 (see FIG. 3), wherein the structure 212 is impregnated.
第3圖為說明第2圖所示組合材料210的詳細圖。 Fig. 3 is a detailed view for explaining the composite material 210 shown in Fig. 2.
結構體212係為加強組合材料210或疊片體215之機械與化學強度及耐久性而加入之材料(參照第7圖)。例如,結構體212包含以玻璃為基礎的材料。詳言之,結構體212可包含玻璃纖維214及矽基填充料216。玻璃纖維材料214屬線狀物質,係編織於組合材料210或疊片體215中用以支持組合材料210或疊片體215的整個構造(參照第7圖),並具有例如鋼筋混凝土中鋼筋之作用。矽基填充料216為粒子狀物質係分布於疊片體215(參照第7圖)或組合材料210內 以利增加強度與耐久性,並作為例如鋼筋混凝土中礫石之作用。 The structure 212 is a material added to reinforce the mechanical and chemical strength and durability of the composite material 210 or the laminated body 215 (refer to Fig. 7). For example, structure 212 comprises a glass based material. In particular, the structure 212 can include glass fibers 214 and a ruthenium based filler 216. The glass fiber material 214 is a linear material that is woven in the composite material 210 or the laminate body 215 to support the entire structure of the composite material 210 or the laminated body 215 (refer to Fig. 7), and has, for example, a reinforcing bar in reinforced concrete. effect. The ruthenium-based filler 216 is distributed as a particulate material in the laminate 215 (refer to FIG. 7) or the composite material 210. Eli increases strength and durability and acts as, for example, gravel in reinforced concrete.
矩陣211相當於具有經浸漬的結構體212之材料,用以使不同的導電層120互相絕緣,並自金屬層220絕緣導電層120。矩陣211包含一熱硬化性樹脂,例如環氧樹脂。依照一實施例,包含於組合材料210中的矩陣211為熱硬化性樹脂。至於B級之熱硬化性樹脂的特性將詳加說明。 The matrix 211 corresponds to a material having the impregnated structure 212 for insulating the different conductive layers 120 from each other and insulating the conductive layer 120 from the metal layer 220. The matrix 211 comprises a thermosetting resin such as an epoxy resin. According to an embodiment, the matrix 211 included in the composite material 210 is a thermosetting resin. The characteristics of the B-grade thermosetting resin will be described in detail.
第4圖為說明熱硬化性樹脂級與溫度間關係的曲線圖。 Fig. 4 is a graph showing the relationship between the thermosetting resin grade and the temperature.
參照第4圖,X軸代表溫度,Y軸代表依照溫度的熱硬化性樹脂模塑特性。換言之,溫度從低溫至高溫沿X軸增加,而熱硬化性樹脂的可動性沿Y軸增加。 Referring to Fig. 4, the X axis represents temperature and the Y axis represents thermosetting resin molding characteristics according to temperature. In other words, the temperature increases from the low temperature to the high temperature along the X axis, and the mobility of the thermosetting resin increases along the Y axis.
熱硬化性樹脂至少包含B級與C級。 The thermosetting resin contains at least a B grade and a C grade.
B級係指完全固化前熱硬化性樹脂部份固化並固化反應在中級的狀態。B級的熱硬化性樹脂包含未經加熱交連的聚合物。因此,當加熱於B級的熱硬化性樹脂時,聚合物的動能增加至具有可動性及軟性。當接觸某種熔液時,溶液中的分子穿透聚合物間而使熱硬化性樹脂膨脹。 The grade B refers to a state in which the thermosetting resin is partially cured and the curing reaction is in an intermediate state before the complete curing. The B-grade thermosetting resin contains a polymer which is not crosslinked by heating. Therefore, when heated to the B-stage thermosetting resin, the kinetic energy of the polymer is increased to have mobility and softness. When contacting a certain melt, molecules in the solution penetrate the polymer to expand the thermosetting resin.
如上所述,包含於組合材料210中的矩陣211係屬於B級的熱硬化性樹脂。因此,當加熱於組合材料210時,可獲得可動性,於是模塑工作得以完成。參照第4圖,當加熱於B級的熱硬化性樹脂時,熱硬化性樹脂並不固化,但軟 化成足以模塑。因此,當加熱堆積於基板100上的組合材料210時,B級的熱硬化性樹脂其係包含於組合材料210中可加以模塑。因此,當疊片工作藉由加壓完成時,熱硬化性樹脂即填充於內部電路圖形121內。加熱模塑熱硬化性樹脂的溫度乃為熱硬化性樹脂進入C級前之溫度。加熱模塑之溫度,例如環氧樹脂的場合,可以在大約120℃至大約180℃。正如將參照第6圖詳加說明者,由於包含於組合材料210中的矩陣211係屬於B級的熱硬化性樹脂,矩陣211乃具低化學性抵抗因此,由於矩陣211可利用溶液蝕刻,空腔CV可藉由濕式蝕刻形成。 As described above, the matrix 211 included in the composite material 210 is a class B thermosetting resin. Therefore, when heated to the composite material 210, mobility can be obtained, and the molding work is completed. Referring to Fig. 4, when heated to a grade B thermosetting resin, the thermosetting resin is not cured, but is soft. It is enough to mold. Therefore, when the composite material 210 deposited on the substrate 100 is heated, the B-grade thermosetting resin is contained in the composite material 210 and can be molded. Therefore, when the lamination operation is completed by pressurization, the thermosetting resin is filled in the internal circuit pattern 121. The temperature at which the thermosetting resin is heat-molded is the temperature before the thermosetting resin enters the C-stage. The temperature of the heat molding, such as an epoxy resin, may range from about 120 ° C to about 180 ° C. As will be explained in detail with reference to Fig. 6, since the matrix 211 contained in the composite material 210 belongs to the class B thermosetting resin, the matrix 211 has low chemical resistance, and therefore, since the matrix 211 can be etched by solution, The cavity CV can be formed by wet etching.
其次,C級係指熱硬化性樹脂完全固化的狀態。換言之,C級係指施加能量以完成交連,於是熱硬化性樹脂成穩定交連的狀態。因此,由於經由交連而聚合物型體增大,C級的熱硬化性樹脂重量乃大於B級的熱硬化性樹脂重量。由於不可能以加熱方式模塑C級熱硬化性樹脂,C級熱硬化性樹脂即不能溶解及熔解於某些溶液中。如將參照第7圖詳加說明者,包含於疊片體215(參照第7圖)內的矩陣211係經由包含於組合材料210內的B級熱硬化性樹脂完全固化所得的C級熱硬化性樹脂。因此,疊片體215可不被模塑,而增加化學性抵抗,強度及耐久性。 Next, the C grade means a state in which the thermosetting resin is completely cured. In other words, the C grade means that energy is applied to complete the crosslinking, and the thermosetting resin is in a state of being stably crosslinked. Therefore, the weight of the C-grade thermosetting resin is larger than the weight of the B-grade thermosetting resin because the polymer form is increased by crosslinking. Since it is impossible to mold the C-grade thermosetting resin by heating, the C-grade thermosetting resin cannot be dissolved and melted in some solutions. As will be described in detail with reference to Fig. 7, the matrix 211 included in the laminated body 215 (refer to Fig. 7) is a C-stage thermal hardening obtained by completely curing the B-stage thermosetting resin contained in the composite material 210. Resin. Therefore, the laminated body 215 can be molded without increasing chemical resistance, strength and durability.
如第2圖所示,組合材料210包含有形成於組合材料210外表面上,而面對著基板100的金屬層220。金屬層 220可由銅或銀形成。 As shown in FIG. 2, the composite material 210 includes a metal layer 220 formed on the outer surface of the composite material 210 while facing the substrate 100. Metal layer 220 may be formed of copper or silver.
然而,本實施例並非限定於第2圖所示者,而可將不具金屬層220的組合材料210被塗佈於基板100上,而後將金屬層220利用篩網印花或滾壓塗佈方式形成於組合材料210的外表面上。 However, the present embodiment is not limited to the one shown in FIG. 2, and the composite material 210 having no metal layer 220 may be coated on the substrate 100, and then the metal layer 220 may be formed by screen printing or roll coating. On the outer surface of the composite material 210.
參照第5圖,一部份其內將形成空腔CV之金屬層220被去除。 Referring to Fig. 5, a portion of the metal layer 220 in which the cavity CV is formed is removed.
詳言之,第5圖的過程可認為屬於窗口形成過程。依照一實施例,組合材料210中的空腔CV係藉由濕式蝕刻所形成。因此,當組合材料210上形成金屬層220時,形成窗口之過程即已完成。 In particular, the process of Figure 5 can be considered to belong to the window forming process. According to an embodiment, the cavity CV in the composite material 210 is formed by wet etching. Therefore, when the metal layer 220 is formed on the composite material 210, the process of forming the window is completed.
雖未顯示,但一乾式膜阻(DRF)被塗佈,完成曝光及顯像,而一圖形形成於用以形成空腔CV而預留的部份223。其次,對應於預留用以形成空腔CV的部份223之部份金屬層220藉由DFR法去除,而其上形成一圖形作為光罩之用。其次,將DFR剝離。窗口形成過程可利用任合眾所周知的方法施行之。 Although not shown, a dry film barrier (DRF) is applied to complete exposure and development, and a pattern is formed in the portion 223 reserved for forming the cavity CV. Next, a portion of the metal layer 220 corresponding to the portion 223 reserved for forming the cavity CV is removed by the DFR method, and a pattern is formed thereon as a mask. Second, the DFR is stripped. The window formation process can be performed using any well-known method.
參照第6圖,至少一空腔CV集中形成於組合材料210內。雖然第6圖中僅顯示一個空腔CV,依照產品設計亦可形成複數個空腔CV。 Referring to FIG. 6, at least one cavity CV is concentratedly formed in the composite material 210. Although only one cavity CV is shown in Fig. 6, a plurality of cavities CV may be formed according to the product design.
藉由去除組合材料210,形成一空腔CV以安裝半導體晶片。空腔CV為一開口,透過此開口配置於組合材 料210下方之芯層115及包含內部電路圖形121的導電層120得以曝露。空腔CV不同於穿孔,透過穿孔只有配置於組合材料210下方之導電層120可曝露。由於空腔CV為一預留將來安裝半導體晶片之空間,空腔CV的功能不同於穿孔的功能,穿孔的內表面施有電鍍,而做為電氣連接的構件。同時,空腔CV與穿孔不同之處在於空腔CV具有足夠寬度用以安裝一半導體晶片。 By removing the composite material 210, a cavity CV is formed to mount the semiconductor wafer. The cavity CV is an opening through which the composite material is disposed The core layer 115 under the material 210 and the conductive layer 120 including the internal circuit pattern 121 are exposed. The cavity CV is different from the perforation, and only the conductive layer 120 disposed under the composite material 210 can be exposed through the perforations. Since the cavity CV is a space in which a semiconductor wafer is to be mounted in the future, the function of the cavity CV is different from that of the perforation, and the inner surface of the perforation is plated as a member for electrical connection. At the same time, the cavity CV differs from the perforation in that the cavity CV has a sufficient width for mounting a semiconductor wafer.
詳言之,空腔CV係以濕式蝕刻方式所形成。空腔CV係去除曝露於部份223之組合材料210而形成者。而蝕刻時係使用金屬層220作為自動對準的光罩。如第3圖所述,組合材料210包含有矩陣211及結構體212。因此,所使用於濕式蝕刻的溶液應能同時去除矩陣211及結構體212。所用溶液包含蝕刻玻璃用劑,用以去除含有玻璃成份的結構體212。 In detail, the cavity CV is formed by wet etching. The cavity CV is formed by removing the composite material 210 exposed to the portion 223. The metal layer 220 is used as an automatically aligned mask during etching. As shown in FIG. 3, the composite material 210 includes a matrix 211 and a structure 212. Therefore, the solution used for wet etching should be capable of simultaneously removing the matrix 211 and the structure 212. The solution used contains an etch glass agent for removing the structure 212 containing the glass component.
去除組合材料210的方法可只經一個過程或複數個反覆的過程。例如,形成空腔CV的組合材料210之部份223所包含的矩陣211可利用第一溶液於第一過程中去除,而同樣包含於預留形成空腔CV的組合材料210之部份223內之結構體212可利用第二溶液於第二過程中去除。必要時,第一過程可在經第二過程後再重覆實行,亦可先完成第二過程後再施行第一過程。 The method of removing the composite material 210 may be through only one process or a plurality of repeated processes. For example, the matrix 211 included in the portion 223 of the composite material 210 forming the cavity CV can be removed in the first process using the first solution, and also included in the portion 223 of the composite material 210 that is reserved to form the cavity CV. The structure 212 can be removed in the second process using the second solution. If necessary, the first process may be repeated after the second process, or the first process may be performed after the second process is completed.
第一溶液可以是鹼性溶液,例如高錳酸鈉或氫 氧化鈉,有機溶液,例如丙酮或其他酸性溶液。第二溶液可以是酸性溶液,例如氫氟酸(HF)或已知的蝕刻玻璃用劑。於第一過程去除矩陣211之前,凡可使熱硬化性樹脂膨脹之任何酸性、鹼性,或中性蝕刻補助劑均可使用。 The first solution may be an alkaline solution such as sodium permanganate or hydrogen Sodium oxide, an organic solution such as acetone or other acidic solution. The second solution may be an acidic solution such as hydrofluoric acid (HF) or a known etch glass agent. Any acidic, basic, or neutral etching aid that can swell the thermosetting resin can be used before the matrix 211 is removed in the first process.
依照一實施例,空腔CV係利用濕式蝕刻法以形成組合材料210的狀態所形成。 According to an embodiment, the cavity CV is formed by wet etching to form the composite material 210.
如上述情形,由於組合材料210包含有B級熱硬化性樹脂,故空腔CV可藉由濕式蝕刻來形成。當組合材料210形成於基板100之兩表面上且直接固化時,由於B級熱硬化性樹脂經完全固化變成具有高度化學抵抗性的C級熱硬化性樹脂,故不可能以濕式蝕刻法形成空腔CV。然而依照本實施例,由於形成了組合材料210,而空腔CV已先於組合材料210被固化成為疊片體215而形成(參照第7圖),故可進行濕式蝕刻。 As described above, since the composite material 210 contains the B-stage thermosetting resin, the cavity CV can be formed by wet etching. When the composite material 210 is formed on both surfaces of the substrate 100 and directly cured, since the B-stage thermosetting resin is completely cured to become a highly chemically resistant C-grade thermosetting resin, it is impossible to form by wet etching. Cavity CV. However, according to the present embodiment, since the composite material 210 is formed and the cavity CV is formed before the composite material 210 is cured into the laminated body 215 (refer to Fig. 7), wet etching can be performed.
參照第1圖之說明,芯層115如疊片體215包含C級熱硬化性樹脂(參照第7圖)。因此,雖然形成空腔CV之過程中芯層115曝露於蝕刻液,芯層115也不致為蝕刻液所傷害。亦即芯層115與組合材料210包含有不同級之熱硬化性樹脂,故有既定之蝕刻選擇性。同時,由於組合材料210與導電層120之材料互不相同,導電層120不致於與去除組合材料210所用蝕刻液相反應。 Referring to the description of Fig. 1, the core layer 115 such as the laminated body 215 contains a C-stage thermosetting resin (refer to Fig. 7). Therefore, although the core layer 115 is exposed to the etching liquid during the formation of the cavity CV, the core layer 115 is not damaged by the etching liquid. That is, the core layer 115 and the composite material 210 contain different grades of thermosetting resin, so that there is a predetermined etching selectivity. Meanwhile, since the materials of the composite material 210 and the conductive layer 120 are different from each other, the conductive layer 120 does not react with the etching liquid phase used for removing the composite material 210.
依照本實施例,由於空腔CV係利用濕式蝕刻法 所形成,是故擬在其上堆積已完成零件的PCB內之空腔形成方法的問題得以解決,而諸空腔也可集中形成。同時,由於在完成產品中的空腔位置上精確鑽孔的方法上造成對外壁的傷害可避免,也不須使用鑽孔治具,可以低成本設計各種形狀的空腔。此外,可以避免產生黏污,生產成本及生產過程時間得以減少。 According to this embodiment, since the cavity CV is wet etching The problem is that the cavity forming method in the PCB on which the completed part is to be stacked is solved, and the cavities can also be formed collectively. At the same time, since the damage to the outer wall caused by the precise drilling of the cavity position in the product can be avoided, and the drilling jig is not required, the cavity of various shapes can be designed at low cost. In addition, contamination can be avoided, and production costs and production process time can be reduced.
參照第7圖,疊片體215係將形成有空腔CV在其內的組合材料210完全固化而形成。 Referring to Fig. 7, the laminated body 215 is formed by completely curing the composite material 210 in which the cavity CV is formed.
詳言之,疊片體215如組合材料210包含有矩陣211(參照第3圖)及結構體212(參照第3圖),但疊片體215所包含之矩陣211係為C級熱硬化性樹脂。形成疊片體215的步驟乃為加熱於組合材料210所包含的B級熱硬化性樹脂以得到C級熱硬化性樹脂。亦即施加熱能以完成交連,於是熱硬化性樹脂被穩固地交連。因此,疊片體215的化學性抵抗,強度及耐久性皆被改善。 In detail, the laminated body 215 such as the composite material 210 includes a matrix 211 (refer to FIG. 3) and a structure 212 (refer to FIG. 3), but the matrix 211 included in the laminated body 215 is C-stage thermosetting. Resin. The step of forming the laminated body 215 is to heat the Class B thermosetting resin contained in the composite material 210 to obtain a Class C thermosetting resin. That is, thermal energy is applied to complete the cross-linking, and the thermosetting resin is firmly crosslinked. Therefore, the chemical resistance, strength and durability of the laminated body 215 are improved.
完成固化組合材料210的溫度可高於模塑第2圖所示組合材料210之溫度。例如,固化須以等於或高於大約200℃之溫度施行數分鐘。 The temperature at which the cured composite material 210 is completed may be higher than the temperature at which the composite material 210 shown in FIG. 2 is molded. For example, the curing must be carried out for several minutes at a temperature equal to or higher than about 200 °C.
第8圖為本發明一實施例中說明電路板製造方法每週期的溫度過程曲線圖。 Figure 8 is a graph showing the temperature history of the circuit board manufacturing method per cycle in an embodiment of the present invention.
第8圖的方法包含自組合材料210間歇性地形成疊片體215。亦即,在溫度T1下形成模塑組合材料210的 步驟係施行於t1期間。藉由固化組合材料210形成疊片體215的步驟係間歇性的施行於t3期間。形成空腔CV的步驟係施行於介於t3期間及t1期間中之t2期間。於空腔CV蝕刻完成後,在溫度T2下於t3期間固化組合材料210以形成疊片體215。 The method of FIG. 8 includes intermittently forming a laminate 215 from the composite material 210. That is, the molded composite material 210 is formed at a temperature T1. The steps are performed during t1. The step of forming the laminated body 215 by curing the composite material 210 is intermittently performed during t3. The step of forming the cavity CV is performed during t2 during the period t3 and during the period t1. After the cavity CV etch is completed, the composite material 210 is cured during t3 at a temperature T2 to form a lamination body 215.
用以形成組合材料210及模塑組合材料210以穿透內部電路圖形121所需在t1期間的過程溫度係低於形成疊片體215所需在t3期間的過程溫度。此乃由於使聚合物交連所需熱能係高於增加聚合物可動性所需熱能所致。 The process temperature required to form the composite material 210 and the molding composition 210 to penetrate the internal circuit pattern 121 during t1 is lower than the process temperature required to form the lamination body 215 during t3. This is due to the fact that the thermal energy required to crosslink the polymer is higher than the thermal energy required to increase the mobility of the polymer.
依照本實施例,包含具有所需強度及耐久性的聚合物之最終電路板的疊片體215具有適合於封裝用的物理性能,而空腔CV可集中利用間歇性過程及濕式蝕刻過程形成。因此,依照本實施例之電路板的製造方法可以於短時間,以較少之投資及設備成本製造出具有能滿足使用者需求的物理性能之電路板。 According to the present embodiment, the laminated body 215 comprising the final circuit board of the polymer having the required strength and durability has physical properties suitable for packaging, and the cavity CV can be concentrated by using an intermittent process and a wet etching process. . Therefore, the manufacturing method of the circuit board according to the present embodiment can manufacture a circuit board having physical properties satisfying the user's demand in a short time with less investment and equipment cost.
參照第9圖,茲有一外部電路圖形221形成於設立在疊片體215外表面上的金屬層220上。形成外部電路圖形221的方法與形成內部電路圖形121的方法相同。雖然並未顯示於第9圖,一電路板可藉由穿設專孔及施行其他表面處理以印製保護層製成。 Referring to Fig. 9, an external circuit pattern 221 is formed on the metal layer 220 which is formed on the outer surface of the laminated body 215. The method of forming the external circuit pattern 221 is the same as the method of forming the internal circuit pattern 121. Although not shown in Fig. 9, a circuit board can be made by printing a protective layer by piercing a dedicated hole and performing other surface treatments.
第10圖及第11圖為本發明各實施例中利用製造晶片封裝300及300a的方法所製造之晶片封裝300及300a 的斷面圖。 10 and 11 are wafer packages 300 and 300a manufactured by the method of manufacturing wafer packages 300 and 300a in accordance with various embodiments of the present invention. Sectional view.
第10圖及第11圖所示各晶片封裝300及300a包含一半導體晶片安裝於第9圖所示電路板200上。 Each of the chip packages 300 and 300a shown in Figs. 10 and 11 includes a semiconductor wafer mounted on the circuit board 200 shown in Fig. 9.
參照第10圖及第11圖,一半導體晶片係備安裝於第9圖所示電路板200上。如第10圖所示。一半導體晶片30可安裝於電路板200上。然而本實施例並非限定如此,如第11圖所示,複數的半導體晶片31及32可安裝於電路板200上。雖然於第11圖中顯示安裝有2個半導體晶片30及31,但本實施例並非僅限定如此,尚可有3個或更多半導體晶片安裝於電路板200上。 Referring to Figures 10 and 11, a semiconductor wafer system is mounted on the circuit board 200 shown in Figure 9. As shown in Figure 10. A semiconductor wafer 30 can be mounted on the circuit board 200. However, the present embodiment is not limited thereto. As shown in FIG. 11, a plurality of semiconductor wafers 31 and 32 may be mounted on the circuit board 200. Although two semiconductor wafers 30 and 31 are mounted in FIG. 11, the present embodiment is not limited thereto, and three or more semiconductor wafers may be mounted on the circuit board 200.
至少有一半導體晶片30、31或32係備安裝於空腔CV內。在第11圖中,半導體晶片31可安裝於空腔CV內,而半導體晶片32可安裝於空腔CV外。各半導體晶片30、31及32可使用連接線35電氣上連接於其上形成有外部電路圖形221的金屬層220之曝露部份,或連接於其上形成有內部電路圖形121的導電層120之曝露部份。因此,晶片封裝300或300a,亦即其上安裝有半導體晶片30、31及32之電路板200得以製成。 At least one semiconductor wafer 30, 31 or 32 is mounted within the cavity CV. In Fig. 11, the semiconductor wafer 31 can be mounted in the cavity CV, and the semiconductor wafer 32 can be mounted outside the cavity CV. Each of the semiconductor wafers 30, 31, and 32 may be electrically connected to an exposed portion of the metal layer 220 on which the external circuit pattern 221 is formed, or to the conductive layer 120 on which the internal circuit pattern 121 is formed, using the connection line 35. Exposure part. Therefore, the chip package 300 or 300a, that is, the circuit board 200 on which the semiconductor wafers 30, 31, and 32 are mounted, can be fabricated.
依照本實施例,由於空腔CV係形成於電路板200內,如第10圖所示,藉由安裝半導體晶片30於空腔CV內,晶片封裝300的厚度可進一步減小。由於安裝於空腔CV內的半導體晶片厚度可以減小,由是減少半導體晶片30的 背部研磨成為可能,晶片產量可以增多。同時,如第11圖所示,由於半導體晶片31係安裝於空腔CV內,較之未具空腔的電路板之晶片封裝,可安裝更多的半導體晶片。 According to the present embodiment, since the cavity CV is formed in the circuit board 200, as shown in FIG. 10, the thickness of the wafer package 300 can be further reduced by mounting the semiconductor wafer 30 in the cavity CV. Since the thickness of the semiconductor wafer mounted in the cavity CV can be reduced, the semiconductor wafer 30 is reduced. Back grinding is possible and wafer throughput can be increased. Meanwhile, as shown in Fig. 11, since the semiconductor wafer 31 is mounted in the cavity CV, more semiconductor wafers can be mounted than the chip package of the circuit board without the cavity.
雖未圖示,惟可更進一步形成一電氣連接件,例如焊球於金屬層220上。金屬層220係配置於電路板200表面相對之表面上,而電路板200內形成有空腔CV。同時,晶片封裝300或300a可利用模塑樹脂,例如一種環氧模塑複合物,來密封一部份或全部半導體晶片30、31及32,連接線35,及電路板200,以完成產品。 Although not shown, an electrical connector, such as a solder ball, may be formed on the metal layer 220. The metal layer 220 is disposed on the opposite surface of the surface of the circuit board 200, and a cavity CV is formed in the circuit board 200. Meanwhile, the wafer package 300 or 300a may seal a part or all of the semiconductor wafers 30, 31 and 32, the connection wires 35, and the circuit board 200 with a molding resin such as an epoxy molding compound to complete the product.
雖然本實施例中係例舉一包含導電層120及金屬層220共計4個的多層電路板,惟本發明之概念並非限定如此而已。本發明之製造方法可推及各種其他多層電路板(例如6層電路板或8層電路板等)。 Although a multilayer circuit board including a total of four conductive layers 120 and metal layers 220 is exemplified in the present embodiment, the concept of the present invention is not limited thereto. The manufacturing method of the present invention can be applied to various other multilayer circuit boards (for example, a 6-layer circuit board or an 8-layer circuit board, etc.).
同時,雖然為便於說明,本實施例中例舉了預定穿孔、電鍍貫通孔(PTH)、及預定之電路圖型等,惟本發明之概念並非僅限定如此。所須明瞭者,凡任何不同形狀、不同數目、或不同圖形者,均包含於本發明概念中。 Meanwhile, for convenience of explanation, the present embodiment exemplifies a predetermined through hole, a plated through hole (PTH), a predetermined circuit pattern, and the like, but the concept of the present invention is not limited thereto. It is to be understood that any different shapes, numbers, or different figures are included in the inventive concept.
如上揭敘述,依照本實施例,電路板之製造過程得以簡化,製造成本得以減少,並成本之競爭力得以增進。 As described above, according to the present embodiment, the manufacturing process of the circuit board is simplified, the manufacturing cost is reduced, and the cost competitiveness is enhanced.
綜上所述,本發明之發明概念,業已特予說明於本發明之實施例中。凡熟習於此方面技藝人士,可能對 本發明進行各種形式與內容的變更,但仍不能脫離以下所附本發明申請專利事項之範圍與精神。 In summary, the inventive concept of the present invention has been specifically described in the embodiments of the present invention. Those skilled in the art who are familiar with this aspect may The present invention has been changed in various forms and contents without departing from the scope and spirit of the appended claims.
300‧‧‧晶片封裝 300‧‧‧ chip package
100‧‧‧基板 100‧‧‧Substrate
30‧‧‧半導體晶片 30‧‧‧Semiconductor wafer
35‧‧‧連接線 35‧‧‧Connecting line
120‧‧‧導電層 120‧‧‧ Conductive layer
121‧‧‧內部電路圖形 121‧‧‧Internal circuit graphics
215‧‧‧疊片體 215‧‧‧ laminated body
220‧‧‧金屬層 220‧‧‧metal layer
221‧‧‧外部電路圖形 221‧‧‧External circuit graphics
CV‧‧‧空腔 CV‧‧‧ cavity
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