TWI422484B - Printed wiring board with copper foil - Google Patents
Printed wiring board with copper foil Download PDFInfo
- Publication number
- TWI422484B TWI422484B TW099121184A TW99121184A TWI422484B TW I422484 B TWI422484 B TW I422484B TW 099121184 A TW099121184 A TW 099121184A TW 99121184 A TW99121184 A TW 99121184A TW I422484 B TWI422484 B TW I422484B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper foil
- atomic concentration
- printed wiring
- wiring board
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/088—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyamides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Laminated Bodies (AREA)
Description
本發明係關於一種印刷配線板用銅箔,特別是關於一種可撓性印刷配線板用銅箔。The present invention relates to a copper foil for a printed wiring board, and more particularly to a copper foil for a flexible printed wiring board.
印刷配線板於這半個世紀以來發展快速,如今幾乎所有電子設備中均有使用。隨著近年來電子設備之小型化、高性能化需求之增大,搭載零件之高密度構裝化及訊號之高頻化不斷發展,對於印刷配線板亦要求導體圖案之微細化(細間距化)及高頻對應等。Printed wiring boards have developed rapidly over the past half century and are used today in almost all electronic devices. In recent years, the demand for miniaturization and high performance of electronic devices has increased, and the high-density mounting of components and the high-frequency of signals have been increasing. The printed wiring boards are also required to be fine-grained (fine pitch). ) and high frequency correspondence.
印刷配線板通常係經過如下步驟來製造:將絕緣基板接著於銅箔,製成覆銅積層板後,藉由蝕刻將導體圖案形成於銅箔面。因此,對於印刷配線板用銅箔,係要求與絕緣基板之接著性及蝕刻性。The printed wiring board is usually manufactured by adhering an insulating substrate to a copper foil to form a copper clad laminate, and then forming a conductor pattern on the copper foil surface by etching. Therefore, the copper foil for printed wiring boards is required to have adhesion to an insulating substrate and etching property.
提高與絕緣基板之接著性的技術,通常係實施稱為粗化處理之於銅箔表面形成凹凸的表面處理。例如具有下述方法:於電解銅箔之M面(粗面),使用硫酸銅酸性鍍浴,電沉積複數個呈樹枝狀或小球狀之銅而形成微細之凹凸,並利用定準效應來改善接著性。於粗化處理後,為了進一步提高接著特性,通常進行鉻酸處理或利用矽烷偶合劑之處理等。A technique for improving the adhesion to an insulating substrate is usually performed by a surface treatment called roughening treatment to form irregularities on the surface of the copper foil. For example, the method has the following methods: using a copper sulfate acid plating bath on the M surface (rough surface) of the electrolytic copper foil, and electrodepositing a plurality of dendritic or small spherical copper to form fine irregularities, and using a quenching effect Improve adhesion. After the roughening treatment, in order to further improve the subsequent characteristics, chromic acid treatment or treatment with a decane coupling agent or the like is usually performed.
又,亦已知有於未實施粗化處理之平滑的銅箔表面形成錫、鉻、銅、鐵、鈷、鋅、鎳等之金屬層或合金層的方法。Further, a method of forming a metal layer or an alloy layer of tin, chromium, copper, iron, cobalt, zinc, nickel or the like on the surface of a smooth copper foil which has not been subjected to the roughening treatment is also known.
接著於銅箔之絕緣基板大多係使用聚醯亞胺,因此通常使用將與聚醯亞胺之接著強度較高之鉻被覆於銅箔表面的方法。Since many polyimide substrates are used for the copper foil, a method of coating the surface of the copper foil with chromium having a high bonding strength with polyimine is generally used.
又,研究、開發有如下技術:作為對平滑之銅箔表面的表面處理,形成防止Cu原子向聚醯亞胺層擴散之第1金屬層,並於該第1金屬層上,以蝕刻性良好之程度較薄地形成與絕緣基板之接著性良好的Cr層來作為第2金屬層,藉此同時獲得與絕緣基板之良好接著性及良好蝕刻性。其原因在於,若Cu原子或Cu氧化物向聚醯亞胺側擴散,則接著界面附近之聚醯亞胺層會變得脆弱,而成為剝離之起點。Further, research and development have been made as follows: as a surface treatment for the surface of a smooth copper foil, a first metal layer for preventing diffusion of Cu atoms into the polyimide layer is formed, and the etching property is good on the first metal layer. As a second metal layer, a Cr layer having good adhesion to an insulating substrate is formed to a small extent, and good adhesion to the insulating substrate and good etching property are simultaneously obtained. This is because if the Cu atom or the Cu oxide diffuses toward the polyimine side, the polyimide layer in the vicinity of the interface becomes weak and becomes the starting point of the peeling.
於銅箔表面被覆鉻層之方法,具有濕式處理方法及乾式處理方法等。其中,以濕式處理將鉻層被覆於表面之方法,具有:於銅箔表面形成Zn層或Zn合金層,並且於該層上形成鉻酸鹽層之方法;以及於銅箔表面形成不含Zn之層,然後於該層上不形成鉻酸鹽層之方法。前者之例揭示於專利文獻1,後者之例則揭示於專利文獻2。於Zn層或Zn合金層上形成鉻酸鹽層時,在Zn層或Zn合金層中之Zn與溶液中之Cr6+ 之間會發生取代反應,而析出Cr之氫氧化物。該方法中,Cr係以氫氧化物之狀態析出。因此,析出之Cr之價數並非為0價,而是與聚醯亞胺之接著性優異之3價。The method of coating the surface of the copper foil with a chromium layer has a wet processing method, a dry processing method, and the like. Wherein the method of coating the chromium layer on the surface by wet treatment comprises: forming a Zn layer or a Zn alloy layer on the surface of the copper foil, and forming a chromate layer on the layer; and forming a surface on the copper foil A layer of Zn followed by no formation of a chromate layer on the layer. An example of the former is disclosed in Patent Document 1, and an example of the latter is disclosed in Patent Document 2. When a chromate layer is formed on the Zn layer or the Zn alloy layer, a substitution reaction occurs between Zn in the Zn layer or the Zn alloy layer and Cr 6+ in the solution, and a hydroxide of Cr is precipitated. In this method, Cr is precipitated in the form of a hydroxide. Therefore, the valence of the precipitated Cr is not zero, but is a trivalent excellent in adhesion to polyimine.
又,使用乾式處理之方法揭示於專利文獻3。於專利文獻3記載有:於銅箔之表面形成Ni-Cr合金層,然後於該合金層之表面形成特定厚度之氧化物層,藉此即使於銅箔表面平滑且定準效應較低之狀態下,亦可大幅提升與樹脂基材之接著性。又,揭示有如下之印刷配線基板用銅箔:係於表面蒸鍍形成1~100nm之Ni-Cr合金層,然後於該合金層之表面形成厚度0.5~6nm之Cr氧化物層,且最表面之平均表面粗糙度Rz JIS為2.0μm以下。Further, a method using dry processing is disclosed in Patent Document 3. Patent Document 3 discloses that a Ni—Cr alloy layer is formed on the surface of a copper foil, and then an oxide layer having a specific thickness is formed on the surface of the alloy layer, thereby smoothing the surface of the copper foil and having a low leveling effect. The adhesion to the resin substrate can also be greatly improved. Further, a copper foil for a printed wiring board in which a Ni-Cr alloy layer of 1 to 100 nm is formed by vapor deposition on the surface, and a Cr oxide layer having a thickness of 0.5 to 6 nm is formed on the surface of the alloy layer, and the surface is formed. The average surface roughness Rz JIS is 2.0 μm or less.
[專利文獻1]日本特開2005-344174號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-344174
[專利文獻2]日本特開2007-007937號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2007-007937
[專利文獻3]日本特開2007-207812號公報[Patent Document 3] Japanese Patent Laid-Open Publication No. 2007-207812
上述各種先前技術中,就形成細間距之電路之觀點而言,利用粗化處理提高接著性之方法並不佳。即,若由於細間距化而使得導體間隔變窄時,則會有粗化處理部於利用蝕刻形成電路後殘留在絕緣基板上,引起絕緣劣化之虞。若為了防止該情形而欲蝕刻整個粗化表面時,則需要較長之蝕刻時間,且無法維持特定之配線寬度。In the above various prior arts, the method of improving the adhesion by the roughening treatment is not preferable from the viewpoint of forming a fine pitch circuit. In other words, when the conductor spacing is narrowed by the fine pitch, the roughening treatment portion remains on the insulating substrate after the circuit is formed by etching, and the insulation is deteriorated. If the entire roughened surface is to be etched in order to prevent this, a long etching time is required and a specific wiring width cannot be maintained.
就接著強度之觀點而言,與於粗化處理面積層聚醯亞胺之方法相較之下,於平滑之銅箔表面積層聚醯亞胺之方法較為不佳。其原因在於,粗化處理面由於定準效應而獲得接著強度,相對於此,當不進行粗化處理時,則不會獲得定準效應,並且,由於Cu原子會擴散於聚醯亞胺中,導致界面附近之聚醯亞胺層變得脆弱,而使得該部分成為剝離之起點。From the viewpoint of strength, the method of polyimine on the surface area of the smooth copper foil is inferior to the method of roughening the area of the polyimide layer. The reason for this is that the roughening treatment surface obtains the bonding strength due to the quenching effect. On the other hand, when the roughening treatment is not performed, the registration effect is not obtained, and since the Cu atoms are diffused in the polyimide. This causes the polyimine layer near the interface to become weak, making this part the starting point for the peeling.
又,於乾式處理,例如設置Ni層或Ni-Cr合金層之方法,與絕緣基板之接著性的基本特性具有大幅的改善空間。前者係由於與聚醯亞胺等之接著性良好之Cr3+ 不存在的緣故,而後者則是由於被膜中因與Ni共存,故Cr3+ 之存在比例較低的緣故。Further, in the dry treatment, for example, a method of providing a Ni layer or a Ni-Cr alloy layer has a large space for improvement in the basic characteristics of the adhesion to the insulating substrate. The former is due to the absence of Cr 3+ which is excellent in adhesion to polyimine or the like, and the latter is due to coexistence with Ni in the film, so the existence ratio of Cr 3+ is low.
又,於以乾式處理設置Cr層之方法中,雖於室溫下可獲得較高之接著強度,但於該積層體受到熱加工之情形時,若層厚度較薄,則源自銅箔之Cu原子會於Cr層中擴散而侵入聚醯亞胺層內,使接著強度劣化。另一方面,若Cr層厚至足夠防止Cu原子擴散之程度,則表面處理層之蝕刻性較差。此係為了形成電路圖案而進行蝕刻處理後,Cr殘存於絕緣基板上之被稱為「蝕刻殘留」之現象。Further, in the method of providing the Cr layer by dry treatment, although a high bonding strength can be obtained at room temperature, when the laminated body is subjected to hot working, if the layer thickness is thin, it is derived from copper foil. The Cu atoms diffuse into the Cr layer and intrude into the polyimide layer to deteriorate the adhesion strength. On the other hand, if the Cr layer is thick enough to prevent the diffusion of Cu atoms, the surface treatment layer is inferior in etching property. This is a phenomenon in which Cr is left on the insulating substrate after etching treatment to form a circuit pattern, which is called "etching residue".
又,專利文獻1及2所記載之表面處理層,係以電鍍所形成。此時,銅箔本身係作用為電化學反應之電極。銅箔之表面具有油坑(oil pit)等凹凸,並且於表面附近存在數百nm之夾雜物,因此該部分,電子之流動受到阻礙,而不易以均勻之厚度形成極薄之表面處理層,難以同時實現與聚醯亞胺之接著性及蝕刻性。Further, the surface treatment layers described in Patent Documents 1 and 2 are formed by plating. At this time, the copper foil itself acts as an electrode for electrochemical reaction. The surface of the copper foil has irregularities such as oil pits, and there are inclusions of several hundred nm in the vicinity of the surface, so that the flow of electrons is hindered in this portion, and it is not easy to form a very thin surface treatment layer with a uniform thickness. It is difficult to achieve the adhesion to the polyimide and the etching property at the same time.
並且,本發明人等發現,為了使對與聚醯亞胺之接著性有效之Cr附著於銅箔表面,必須於Zn層或Zn合金層上形成鉻酸鹽層,但如專利文獻1所記載般,於在Ni-Zn合金層上形成有鉻酸鹽層之情形時,接著界面附近之鉻氧化物濃度變低,無法獲得高接著強度。又,於如專利文獻2所記載般,當不於Zn層或Zn合金層上形成鉻酸鹽層之情形時,由於無法利用Zn與Cr6+ 之間的取代反應,故Cr之附著量存在極限。In addition, the inventors of the present invention have found that it is necessary to form a chromate layer on the Zn layer or the Zn alloy layer in order to adhere Cr to the surface of the copper foil, which is effective for adhesion to polyimine, but is described in Patent Document 1. In the case where a chromate layer is formed on the Ni-Zn alloy layer, the concentration of chromium oxide in the vicinity of the interface becomes low, and high bonding strength cannot be obtained. Further, as described in Patent Document 2, when a chromate layer is not formed on the Zn layer or the Zn alloy layer, since the substitution reaction between Zn and Cr 6+ cannot be utilized, the adhesion amount of Cr exists. limit.
因此,本發明之課題,在於提供一種與絕緣基板之接著性及蝕刻性兩者皆優異、且適合於細間距化之印刷配線板用銅箔。Therefore, an object of the present invention is to provide a copper foil for a printed wiring board which is excellent in both adhesiveness and etching property with an insulating substrate and which is suitable for fine pitch.
先前通常認為若使被覆層變薄,則會使接著強度下降。然而,本發明人等經過潛心研究之結果,當以奈米級之極薄之厚度均勻地設置Cr層時,與濕式鍍敷相較之下,可提高接著界面附近之Cr氧化物之濃度,可獲得優異之與絕緣基板之密合性。藉由使厚度為極薄,而削減蝕刻性低之Cr之使用量,且被覆層均勻,因此對蝕刻性有利。又,藉由將防止Cu原子擴散之層設置於上述Cr正下方,可提供一種能夠耐於苛刻之使用環境之銅箔積層基板。It has been conventionally thought that if the coating layer is made thinner, the strength of the bonding is lowered. However, as a result of intensive research by the present inventors, when the Cr layer is uniformly provided with a very thin thickness of the nanometer level, the concentration of Cr oxide in the vicinity of the interface can be increased as compared with the wet plating. Excellent adhesion to an insulating substrate can be obtained. By making the thickness extremely thin, the amount of Cr having low etching property is reduced, and the coating layer is uniform, which is advantageous for etching property. Further, by providing a layer for preventing diffusion of Cu atoms directly under the Cr, it is possible to provide a copper foil laminated substrate which can withstand a severe use environment.
以上述見解為基礎所完成之本發明之一態樣,係一種印刷配線板用銅箔,其具備有銅箔基材、與被覆該銅箔基材表面之至少一部分之被覆層,被覆層係由自銅箔基材表面依序積層之由金屬之單體或合金構成的中間層及Cr層所構成,被覆層中,Cr以18~180μg/dm2 之被覆量存在,若將根據利用XPS之自表面起之深度方向分析所得的深度方向(x:單位nm)之金屬鉻之原子濃度(%)設為f1 (x),將氧化物鉻之原子濃度(%)設為f2 (x),將全體鉻之原子濃度(%)設為f(x)(f(x)=f1 (x)+f2 (x)),將鎳之原子濃度(%)設為g(x),將銅之原子濃度(%)設為h(x),將氧之原子濃度(%)設為i(x),將碳之原子濃度(%)設為j(x),將其他金屬之原子濃度之總和設為k(x),則於區間[0,1.0]內,∫h(x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為10%以下,∫f2 (x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為20%以上,於區間[1.0,2.5]內,滿足0.1≦∫f1 (x)dx/∫f2 (x)dx≦1.0。According to one aspect of the present invention, which is based on the above findings, a copper foil for a printed wiring board comprising a copper foil substrate and a coating layer covering at least a part of a surface of the copper foil substrate, the coating layer The intermediate layer and the Cr layer composed of a single metal or alloy laminated from the surface of the copper foil substrate, and Cr is present in an amount of 18 to 180 μg/dm 2 in the coating layer, and the XPS will be used according to the use of XPS. The atomic concentration (%) of the metal chromium in the depth direction (x: unit nm) obtained from the depth direction analysis from the surface is f 1 (x), and the atomic concentration (%) of the oxide chromium is set to f 2 ( x), the atomic concentration (%) of the entire chromium is set to f(x)(f(x)=f 1 (x)+f 2 (x)), and the atomic concentration (%) of nickel is set to g(x) ), the atomic concentration (%) of copper is h (x), the atomic concentration (%) of oxygen is i (x), and the atomic concentration (%) of carbon is set to j (x), and other metals are used. The sum of the atomic concentrations is set to k(x), then within the interval [0,1.0], ∫h(x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i (x) dx+∫j(x)dx+∫k(x)dx) is 10% or less, ∫f 2 (x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫ i(x)dx+∫j(x)dx+∫k(x)dx) More than 20%, in the interval [1.0, 2.5], the satisfying 0.1 ≦ ∫f 1 (x) dx / ∫f 2 (x) dx ≦ 1.0.
本發明之印刷配線板用銅箔之一實施形態中,Cr以30~145μg/dm2 之被覆量存在。In one embodiment of the copper foil for a printed wiring board of the present invention, Cr is present in an amount of 30 to 145 μg/dm 2 .
本發明之印刷配線板用銅箔之另一實施形態中,Cr以36~90μg/dm2 之被覆量存在。In another embodiment of the copper foil for a printed wiring board of the present invention, Cr is present in an amount of 36 to 90 μg/dm 2 .
本發明之印刷配線板用銅箔之再另一實施形態中,Cr以36~75μg/dm2 之被覆量存在。In still another embodiment of the copper foil for a printed wiring board of the present invention, Cr is present in an amount of 36 to 75 μg/dm 2 .
本發明之印刷配線板用銅箔之再另一實施形態中,中間層含有Ni、Mo、Ti、Zn、Co、V、Sn、Mn及Cr之至少任一種。In still another embodiment of the copper foil for a printed wiring board of the present invention, the intermediate layer contains at least one of Ni, Mo, Ti, Zn, Co, V, Sn, Mn, and Cr.
本發明之印刷配線板用銅箔之再另一實施形態中,被覆層係由自銅箔基材表面依序積層之由Ni、Mo、Ti、Zn及Co之任一種構成的中間層及Cr層所構成,於該中間層,Ni、Mo、Ti、Zn及Co之任一種以15~1030μg/dm2 之被覆量存在。In still another embodiment of the copper foil for a printed wiring board of the present invention, the coating layer is an intermediate layer composed of any one of Ni, Mo, Ti, Zn, and Co laminated on the surface of the copper foil substrate. In the intermediate layer, any of Ni, Mo, Ti, Zn, and Co is present in an amount of 15 to 1030 μg/dm 2 .
本發明之印刷配線板用銅箔之再另一實施形態中,於中間層,Ni以15~440μg/dm2 之被覆量存在,Mo以25~1030μg/dm2 之被覆量存在,Ti以15~140μg/dm2 之被覆量存在,Zn以15~750μg/dm2 之被覆量存在,或者Co以25~1030μg/dm2 之被覆量存在。In still another embodiment of the copper foil for a printed wiring board of the present invention, Ni is present in an amount of 15 to 440 μg/dm 2 in the intermediate layer, and Mo is present in an amount of 25 to 1030 μg/dm 2 , and Ti is 15 in the coating layer. ~ 140μg / dm 2 amount of coating present, Zn to 15 ~ 750μg / dm 2 amount of coating is present, or an amount of Co in the coating 25 ~ 1030μg / dm 2 of the present.
本發明之印刷配線板用銅箔之再另一實施形態中,被覆層係由自銅箔基材表面依序積層之由Ni、Zn、V、Sn、Mn、Cr及Cu之至少任兩種之合金構成的中間層及Cr層所構成,於該中間層,Ni、Zn、V、Sn、Mn及Cr之任兩種以20~1700μg/dm2 之被覆量存在。In still another embodiment of the copper foil for a printed wiring board of the present invention, the coating layer is composed of at least two of Ni, Zn, V, Sn, Mn, Cr, and Cu which are sequentially laminated from the surface of the copper foil substrate. The intermediate layer and the Cr layer are composed of an alloy, and in the intermediate layer, any two of Ni, Zn, V, Sn, Mn, and Cr are present in an amount of 20 to 1700 μg/dm 2 .
本發明之印刷配線板用銅箔之再另一實施形態中,中間層係以由Ni與Zn、V、Sn、Mn及Cr之任一種構成之Ni合金所構成。In still another embodiment of the copper foil for a printed wiring board of the present invention, the intermediate layer is made of a Ni alloy composed of Ni, Zn, V, Sn, Mn, and Cr.
本發明之印刷配線板用銅箔之再另一實施形態中,中間層係以由被覆量為15~1000μg/dm2 之Ni及5~750μg/dm2 之Zn構成的Ni-Zn合金、由合計被覆量為20~600μg/dm2 之Ni及V構成之Ni-V合金、由合計被覆量為18~450μg/dm2 之Ni及Sn構成之Ni-Sn合金、由被覆量為15~450μg/dm2 之Ni及5~200μg/dm2 之Mn構成的Ni-Mn合金、由被覆量為20~440μg/dm2 之Ni及5~110μg/dm2 之Cr構成的Ni-Cr合金所構成。A printed wiring board according to the present invention and then a copper foil with a further embodiment, the intermediate layer is Ni-Zn-based in a coating amount of 15 ~ 1000μg / dm Ni 2 and of 5 ~ 750μg / dm Zn 2 composed of an alloy of, by the A Ni-V alloy composed of Ni and V having a total coating amount of 20 to 600 μg/dm 2 and a Ni-Sn alloy composed of Ni and Sn having a total coating amount of 18 to 450 μg/dm 2 and having a coating amount of 15 to 450 μg. / dm Ni 2 of and the Ni-Mn alloy 5 ~ 200μg / dm Mn 2 constitutes of a coating amount of 20 ~ 440μg / Ni-Cr alloy dm Ni 2's and 5 ~ 110μg / dm Cr 2 constitutes constituted .
本發明之印刷配線板用銅箔之再另一實施形態中,中間層係以由Cu與Zn及Ni之任一種或兩種構成之Cu合金所構成。In still another embodiment of the copper foil for a printed wiring board of the present invention, the intermediate layer is made of a Cu alloy composed of any one or two of Cu, Zn, and Ni.
本發明之印刷配線板用銅箔之再另一實施形態中,中間層係以Zn之被覆量為15~750μg/dm2 之Cu-Zn合金、Ni被覆量為15~440μg/dm2 之Cu-Ni合金、或者Ni被覆量為15~1000μg/dm2 且Zn被覆量為5~750μg/dm2 之Cu-Ni-Zn合金所構成。A printed wiring board according to the present invention and then a copper foil with a further embodiment, the intermediate coating layer system in an amount of Zn is 15 ~ 750μg / dm Cu-Zn alloy of 2, Ni-coated in an amount of 15 ~ 440μg / dm Cu 2 of -Ni alloy, or Ni coating in an amount of 15 ~ 1000μg / dm 2 and Zn coating amount of 5 ~ 750μg / dm Cu-Ni -Zn alloy composed of 2.
本發明之印刷配線板用銅箔之再另一實施形態中,若利用穿透式電子顯微鏡觀察被覆層之剖面時,則最大厚度為0.5~12nm,最小厚度為最大厚度之80%以上。In still another embodiment of the copper foil for a printed wiring board of the present invention, when the cross section of the coating layer is observed by a transmission electron microscope, the maximum thickness is 0.5 to 12 nm, and the minimum thickness is 80% or more of the maximum thickness.
本發明之印刷配線板用銅箔之再另一實施形態中,當進行完相當聚醯亞胺硬化之熱處理時,若將根據利用XPS之自表面起之深度方向分析所得的深度方向(x:單位nm)之金屬鉻之原子濃度(%)設為f1 (x),將氧化物鉻之原子濃度(%)設為f2 (x),將全體鉻之原子濃度(%)設為f(x)(f(x)=f1 (x)+f2 (x)),將鎳之原子濃度(%)設為g(x),將銅之原子濃度(%)設為h(x),將氧之原子濃度(%)設為i(x),將碳之原子濃度(%)設為j(x),將其他金屬之原子濃度之總和設為k(x),則於區間[0,1.0]內,∫h(x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為10%以下,∫f2 (x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為20%以上,於區間[1.0,2.5]內,滿足0.1≦∫f1 (x)dx/∫f2 (x)dx≦1.0。In still another embodiment of the copper foil for a printed wiring board of the present invention, when the heat treatment for hardening of the polyimine is performed, the depth direction (x: according to the depth direction analysis from the surface by XPS is used. The atomic concentration (%) of the metal chromium per unit nm is f 1 (x), the atomic concentration (%) of the oxide chromium is f 2 (x), and the atomic concentration (%) of the entire chromium is set to f. (x) (f(x)=f 1 (x)+f 2 (x)), the atomic concentration (%) of nickel is set to g(x), and the atomic concentration (%) of copper is set to h(x) In the case where the atomic concentration (%) of oxygen is i(x), the atomic concentration (%) of carbon is j(x), and the sum of the atomic concentrations of other metals is k(x), Within [0,1.0], ∫h(x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x) Dx) is 10% or less, ∫f 2 (x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x ) dx) is 20% or more, and within the interval [1.0, 2.5], 0.1 ≦∫ f 1 (x) dx / ∫ f 2 (x) dx ≦ 1.0 is satisfied.
本發明之印刷配線板用銅箔之再另一實施形態中,該印刷配線板用銅箔係經進行相當聚醯亞胺硬化之熱處理之印刷配線板用銅箔,若將根據利用XPS之自表面起之深度方向分析所得的深度方向(x:單位nm)之金屬鉻之原子濃度(%)設為f1 (x),將氧化物鉻之原子濃度(%)設為f2 (x),將全體鉻之原子濃度(%)設為f(x)(f(x)=f1 (x)+f2 (x)),將鎳之原子濃度(%)設為g(x),將銅之原子濃度(%)設為h(x),將氧之原子濃度(%)設為i(x),將碳之原子濃度(%)設為j(x),將其他金屬之原子濃度之總和設為k(x),則於區間[0,1.0]內,∫h(x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為10%以下,∫f2 (x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為20%以上,於區間[1.0,2.5]內,滿足0.1≦∫f1 (x)dx/∫f2 (x)dx≦1.0。In still another embodiment of the copper foil for a printed wiring board according to the present invention, the copper foil for a printed wiring board is a copper foil for a printed wiring board which is subjected to a heat treatment for hardening the polyimide, and is based on the use of XPS. The atomic concentration (%) of the metal chromium in the depth direction (x: unit nm) obtained by the depth direction analysis of the surface is f 1 (x), and the atomic concentration (%) of the oxide chromium is set to f 2 (x) The atomic concentration (%) of the entire chromium is set to f(x)(f(x)=f 1 (x)+f 2 (x)), and the atomic concentration (%) of nickel is set to g(x). The atomic concentration (%) of copper is h(x), the atomic concentration (%) of oxygen is i(x), and the atomic concentration (%) of carbon is set to j(x), and atoms of other metals are used. The sum of the concentrations is set to k(x), then within the interval [0,1.0], ∫h(x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x ) dx+∫j(x)dx+∫k(x)dx) is 10% or less, ∫f 2 (x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i( x)dx+∫j(x)dx+∫k(x)dx) is 20% or more, within the interval [1.0, 2.5], satisfying 0.1≦∫f 1 (x)dx/∫f 2 (x)dx≦1.0 .
本發明之印刷配線板用銅箔之再另一實施形態中,當對於經由被覆層而形成有絕緣基板之印刷配線板用銅箔,分析將絕緣基板自被覆層剝離後之被覆層的表面時,若將根據利用XPS之自表面起之深度方向分析所得的深度方向(x:單位nm)之金屬鉻之原子濃度(%)設為f1 (x),將氧化物鉻之原子濃度(%)設為f2 (x),將全體鉻之原子濃度(%)設為f(x)(f(x)=f1 (x)+f2 (x)),將鎳之原子濃度(%)設為g(x),將銅之原子濃度(%)設為h(x),將氧之原子濃度(%)設為i(x),將碳之原子濃度(%)設為j(x),將其他金屬之原子濃度之總和設為k(x),將金屬鉻之濃度為最大之自表層起的距離設為F,則於區間[0,F]內,滿足0.1≦∫f1 (x)dx/∫f2 (x)dx≦1.0,且∫h(x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為10%以下。In still another embodiment of the copper foil for a printed wiring board of the present invention, when the surface of the coating layer after the insulating substrate is peeled off from the coating layer is analyzed for the copper foil for a printed wiring board having the insulating substrate formed through the coating layer If the atomic concentration (%) of the metal chromium in the depth direction (x: unit nm) obtained by analyzing the depth direction from the surface by XPS is f 1 (x), the atomic concentration of the oxide chromium (%) ) is f 2 (x), and the atomic concentration (%) of the entire chromium is f(x) (f(x)=f 1 (x)+f 2 (x)), and the atomic concentration of nickel (%) ) is set to g(x), the atomic concentration (%) of copper is h(x), the atomic concentration (%) of oxygen is i(x), and the atomic concentration (%) of carbon is set to j ( x), the sum of the atomic concentrations of other metals is k(x), and the distance from the surface layer where the concentration of metallic chromium is the largest is F, which satisfies 0.1≦∫f in the interval [0, F] 1 (x)dx/∫f 2 (x)dx≦1.0, and ∫h(x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫ j(x)dx+∫k(x)dx) is 10% or less.
本發明之印刷配線板用銅箔之再另一實施形態中,銅箔基材為壓延銅箔。In still another embodiment of the copper foil for a printed wiring board of the present invention, the copper foil substrate is a rolled copper foil.
本發明之印刷配線板用銅箔之再另一實施形態中,印刷配線板為可撓性印刷配線板。In still another embodiment of the copper foil for a printed wiring board of the present invention, the printed wiring board is a flexible printed wiring board.
本發明之另一態樣,係一種具備有本發明之銅箔的覆銅積層板。Another aspect of the present invention is a copper clad laminate provided with the copper foil of the present invention.
本發明之覆銅積層板之一實施形態中,具有銅箔接著於聚醯亞胺之結構。In one embodiment of the copper clad laminate of the present invention, the copper foil is followed by the polyimine.
本發明之再另一態樣,係一種將本發明之覆銅積層板作為材料的印刷配線板。Still another aspect of the present invention is a printed wiring board using the copper clad laminate of the present invention as a material.
根據本發明,可獲得與絕緣基板之接著性及蝕刻性兩者皆優異、且適合於細間距化之印刷配線板用銅箔。又,本發明亦可應用於電磁屏蔽、高頻屏蔽、及為了絕緣而向金屬條積層聚醯亞胺或聚醯胺等樹脂之技術。According to the present invention, it is possible to obtain a copper foil for a printed wiring board which is excellent in both adhesiveness and etching property with an insulating substrate and which is suitable for fine pitch. Further, the present invention is also applicable to electromagnetic shielding, high-frequency shielding, and a technique of laminating a resin such as polyimide or polyamide to a metal strip for insulation.
(銅箔基材)(copper foil substrate)
可用於本發明之銅箔基材之形態並無特別限制,典型的是能夠以壓延銅箔或電解銅箔之形態加以使用。通常,電解銅箔係將銅自硫酸銅鍍浴電解沈積至鈦或不鏽鋼之滾筒上而製造,壓延銅箔則是重複進行利用壓延輥之塑性加工與熱處理而製造。於要求彎曲性之用途,大多使用壓延銅箔。The form of the copper foil substrate which can be used in the present invention is not particularly limited, and it can be typically used in the form of a rolled copper foil or an electrolytic copper foil. Usually, an electrolytic copper foil is produced by electrolytically depositing copper from a copper sulfate plating bath onto a titanium or stainless steel drum, and the rolled copper foil is repeatedly produced by plastic working and heat treatment using a calender roll. Rolled copper foil is often used for applications requiring flexibility.
銅箔基材之材料,除通常使用作為印刷配線板之導體圖案之精銅或無氧銅等高純度之銅以外,例如亦可使用如摻雜Sn之銅、摻雜Ag之銅,添加有Cr、Zr或Mg等之銅合金、添加有Ni及Si等之卡遜系銅合金之類的銅合金。再者,本說明書中,單獨使用術語「銅箔」時,亦包括銅合金箔。As the material of the copper foil substrate, in addition to high-purity copper such as copper or oxygen-free copper which is usually used as a conductor pattern of a printed wiring board, for example, copper doped with Sn or copper doped with Ag may be used. A copper alloy such as Cr, Zr or Mg, or a copper alloy such as a Cason copper alloy such as Ni or Si. Further, in the present specification, when the term "copper foil" is used alone, a copper alloy foil is also included.
可用於本發明之銅箔基材之厚度亦並無特別限制,只要適當調節為適合於印刷配線板用之厚度即可。例如可為5~100μm左右。其中,於以形成精細圖案為目的之情形時,為30μm以下,較佳為20μm以下,典型的是5~20μm左右。The thickness of the copper foil substrate which can be used in the present invention is also not particularly limited as long as it is appropriately adjusted to a thickness suitable for a printed wiring board. For example, it can be about 5 to 100 μm. In the case of forming a fine pattern, it is 30 μm or less, preferably 20 μm or less, and typically about 5 to 20 μm.
對於用於本發明之銅箔基材,以不進行粗化處理較佳。先前,通常為如下情況:利用特殊鍍敷於表面附上微米級之凹凸實施表面粗化處理,利用物理性之定準效應而使其具有與樹脂之接著性。然而,另一方面,就細間距及高頻電特性而言,平滑之箔為良好,而粗化箔則會朝不利之方向發展。又,因省略粗化處理步驟,故亦具有提高經濟性、生產性之效果。因此,本發明中所使用之箔係不特別進行粗化處理之箔。It is preferable that the copper foil substrate used in the present invention is not subjected to roughening treatment. In the past, it has been generally the case that the surface roughening treatment is performed by attaching a special plating to the surface to the micron-sized unevenness, and the physical property is applied to make it have adhesion to the resin. On the other hand, however, in terms of fine pitch and high-frequency electrical characteristics, a smooth foil is good, and a roughened foil develops in an unfavorable direction. Moreover, since the roughening process step is omitted, the effect of improving economy and productivity is also obtained. Therefore, the foil used in the present invention is a foil which is not particularly subjected to roughening treatment.
(被覆層)(covering layer)
於銅箔基材之表面之至少一部分形成有被覆層。被覆之部位並無特別限制,通常為預定與絕緣基板接著之部位。藉由被覆層之存在,以提升與絕緣基板之接著性。被覆層係由自銅箔基材表面依序積層之中間層及Cr層所構成。中間層較佳為含有Ni、Mo、Ti、Zn、Co、V、Sn、Mn及Cr之至少任一種。中間層亦可由金屬之單體所構成,例如較佳為由Ni、Mo、Ti、Zn及Co之任一種所構成。中間層亦可由合金所構成,例如較佳為由Ni、Zn、V、Sn、Mn、Cr及Cu之至少任兩種之合金所構成。又,中間層亦可以由Ni與Zn、V、Sn、Mn及Cr之任一種構成之Ni合金所構成,或亦可以由Cu、與Zn及Ni之任一種或兩種構成之Cu合金所構成。通常,銅箔與絕緣基板之間之接著力,若置於高溫環境下,則有下降之傾向,認為其係由銅熱擴散至表面,與絕緣基板反應所引起。本發明中,藉由預先將可有效防止銅擴散的上述中間層設置於銅箔基材上,而可防止銅之熱擴散。此處,於為了防止銅擴散所設置之各種中間層中,雖然於Cu合金層含有不欲使其擴散於表面之銅,但因將銅加以合金化,故沒有擴散於表面,具有良好之接著性,且亦不會對蝕刻性造成不良影響。A coating layer is formed on at least a portion of the surface of the copper foil substrate. The portion to be coated is not particularly limited, and is usually a portion to be placed next to the insulating substrate. By the presence of the coating layer, the adhesion to the insulating substrate is improved. The coating layer is composed of an intermediate layer and a Cr layer which are sequentially laminated from the surface of the copper foil substrate. The intermediate layer preferably contains at least one of Ni, Mo, Ti, Zn, Co, V, Sn, Mn, and Cr. The intermediate layer may also be composed of a single metal, and is preferably composed of, for example, Ni, Mo, Ti, Zn, and Co. The intermediate layer may be composed of an alloy, and is preferably made of, for example, an alloy of at least two of Ni, Zn, V, Sn, Mn, Cr, and Cu. Further, the intermediate layer may be composed of a Ni alloy composed of Ni and any of Zn, V, Sn, Mn, and Cr, or may be composed of Cu, a Cu alloy composed of either or both of Zn and Ni. . Generally, the adhesion between the copper foil and the insulating substrate tends to decrease if placed under a high temperature environment, and it is considered to be caused by the thermal diffusion of copper to the surface and reaction with the insulating substrate. In the present invention, by disposing the intermediate layer which can effectively prevent copper from diffusing on the copper foil substrate in advance, heat diffusion of copper can be prevented. Here, in the various intermediate layers provided to prevent copper diffusion, although the Cu alloy layer contains copper which is not intended to be diffused on the surface, since copper is alloyed, it does not diffuse to the surface, and has a good adhesion. Sex, and will not adversely affect the etchability.
又,藉由將與絕緣基板之接著性較上述中間層更優異之Cr層設置於該中間層上,可進一步提高與絕緣基板之接著性。因存在中間層,故Cr層之厚度可較薄,因此可減少對蝕刻性之不良影響。再者,本發明中所謂接著性,除指常態下之接著性以外,亦指置於高溫下之後的接著性(耐熱性)及置於高濕度下之後的接著性(耐濕性)。Further, by providing a Cr layer which is more excellent in adhesion to the insulating substrate than the intermediate layer on the intermediate layer, the adhesion to the insulating substrate can be further improved. Since the intermediate layer is present, the thickness of the Cr layer can be made thin, so that the adverse effect on the etching property can be reduced. In addition, in the present invention, the adhesive property refers to the adhesiveness (heat resistance) after being placed at a high temperature and the adhesiveness (moisture resistance) after being placed under high humidity, in addition to the adhesiveness in the normal state.
於本發明之印刷配線板用銅箔中,被覆層極薄且厚度均勻。藉由為此種構成,而可提升與絕緣基板之接著性的原因雖然不明確,但推測原因係由於在中間層上形成與樹脂之接著性非常優異之Cr單層被膜作為最表面,故於醯亞胺化時之高溫熱處理後(約350℃下30分鐘~數小時左右)亦保持具有高接著性之單層被膜結構。又,認為藉由使被覆層為極薄且以中間層與Cr之雙層結構來減少Cr之使用量,使蝕刻性獲得提升。In the copper foil for a printed wiring board of the present invention, the coating layer is extremely thin and uniform in thickness. The reason why the adhesion to the insulating substrate can be improved by such a configuration is not clear, but it is presumed that the Cr single-layer film which is excellent in adhesion to the resin on the intermediate layer is the outermost surface, so After the high-temperature heat treatment in the imidization (about 30 minutes to several hours at about 350 ° C), a single-layered film structure having high adhesion is also maintained. Further, it is considered that the etching property is improved by making the coating layer extremely thin and reducing the amount of Cr used by the two-layer structure of the intermediate layer and Cr.
具體而言,本發明之中間層具有以下構成。Specifically, the intermediate layer of the present invention has the following constitution.
(1)被覆層之鑑定(1) Identification of the coating
本發明中,銅箔素材之表面之至少一部分係以中間層及Cr層之順序加以被覆。該等被覆層之鑑定,係利用XPS或AES等表面分析裝置,自表層進行氬濺鍍,進行深度方向之化學分析,由於存在不同之檢測波峰而可鑑定中間層及Cr層。又,根據各檢測波峰之位置,可確認被覆之順序。In the present invention, at least a part of the surface of the copper foil material is coated in the order of the intermediate layer and the Cr layer. The coating layer is identified by a surface analysis device such as XPS or AES, and argon sputtering is performed from the surface layer to perform chemical analysis in the depth direction, and the intermediate layer and the Cr layer can be identified due to the presence of different detection peaks. Further, the order of the coating can be confirmed based on the position of each detection peak.
(2)附著量(2) Adhesion amount
另一方面,該等中間層及Cr層由於非常薄,因此利用XPS、AES不易進行準確之厚度之評估。因此,本發明中,中間層及Cr層之厚度,係以每單位面積之被覆金屬的重量來加以評估。於本發明之被覆層,Cr以18~180μg/dm2 之被覆量存在。若Cr未達18μg/dm2 ,則無法獲得充分之剝離強度,若Cr超過180μg/dm2 ,則會有蝕刻性明顯下降之傾向。Cr之被覆量較佳為30~145μg/dm2 ,更佳為36~90μg/dm2 ,再更佳為36~75μg/dm2 。On the other hand, since these intermediate layers and Cr layers are very thin, it is difficult to perform accurate thickness evaluation using XPS or AES. Therefore, in the present invention, the thicknesses of the intermediate layer and the Cr layer are evaluated by the weight of the coated metal per unit area. In the coating layer of the present invention, Cr is present in an amount of 18 to 180 μg/dm 2 . If Cr less than 18μg / dm 2, it can not obtain a sufficient peel strength, when Cr exceeds 180μg / dm 2, the etching tends to have significantly decreased the. The coating amount of Cr is preferably 30 ~ 145μg / dm 2, more preferably 36 ~ 90μg / dm 2, and still more preferably 36 ~ 75μg / dm 2.
又,當中間層由Ni、Mo、Ti、Zn及Co之任一種所構成時,較佳為在該中間層,Ni、Mo、Ti、Zn及Co之任一種以15~1030μg/dm2 之被覆量存在。此時,若被覆量未達15μg/dm2 ,則無法獲得充分之剝離強度,若超過1030μg/dm2 ,則會有蝕刻性明顯下降之傾向。Further, when the intermediate layer is composed of any one of Ni, Mo, Ti, Zn and Co, it is preferred that in the intermediate layer, any of Ni, Mo, Ti, Zn and Co is 15 to 1030 μg/dm 2 The amount of coverage exists. At this time, if the coating amount is less than 15 μg/dm 2 , sufficient peel strength cannot be obtained, and when it exceeds 1030 μg/dm 2 , the etching property tends to be remarkably lowered.
並且,此時,較佳為在中間層,Ni以15~440μg/dm2 之被覆量存在,Mo以25~1030μg/dm2 之被覆量存在,Ti以15~140μg/dm2 之被覆量存在,Zn以15~750μg/dm2 之被覆量存在、或者Co以25~1030μg/dm2 之被覆量存在。Further, in this case, it is preferable that Ni is present in an amount of 15 to 440 μg/dm 2 in the intermediate layer, Mo is present in a coating amount of 25 to 1030 μg/dm 2 , and Ti is present in an amount of 15 to 140 μg/dm 2 . , Zn to 15 ~ 750μg / dm 2 amount of coating is present, or an amount of Co in the coating 25 ~ 1030μg / dm 2 of the present.
又,當中間層由Ni、Zn、V、Sn、Mn、Cr及Cu之至少任兩種之合金所構成時,較佳為在該中間層,Ni、Zn、V、Sn、Mn、Cr之至少任兩種以20~1700μg/dm2 之被覆量存在。此時,若被覆量未達20μg/dm2 ,則無法獲得充分之剝離強度,若超過1700μg/dm2 ,則會有蝕刻性明顯下降之傾向。Further, when the intermediate layer is composed of an alloy of at least two of Ni, Zn, V, Sn, Mn, Cr, and Cu, it is preferable that Ni, Zn, V, Sn, Mn, and Cr are in the intermediate layer. At least two of them are present in an amount of 20 to 1700 μg/dm 2 . At this time, if the coating amount is less than 20 μg/dm 2 , sufficient peel strength cannot be obtained, and when it exceeds 1700 μg/dm 2 , the etching property tends to be remarkably lowered.
又,當中間層以由Ni與Zn、V、Sn、Mn及Cr之任一種構成之Ni合金所構成時,較佳為該中間層以由被覆量為15~1000μg/dm2 之Ni及5~750μg/dm2 之Zn構成的Ni-Zn合金、由合計被覆量為20~600μg/dm2 之Ni及V構成之Ni-V合金、由合計被覆量為18~450μg/dm2 之Ni及Sn構成之Ni-Sn合金、由被覆量為15~450μg/dm2 之Ni及5~200μg/dm2 之Mn構成的Ni-Mn合金、由被覆量為20~440μg/dm2 之Ni及5~110μg/dm2 之Cr構成的Ni-Cr合金所構成。Further, when the intermediate layer is composed of a Ni alloy composed of Ni and any of Zn, V, Sn, Mn, and Cr, it is preferable that the intermediate layer is Ni and 5 having a coating amount of 15 to 1000 μg/dm 2 ~ Ni-Zn alloy 750μg / dm Zn 2 constitutes of the total coating amount of 20 ~ 600μg / dm Ni 2's and Ni-V alloy V composed of, the total coating amount of 18 ~ 450μg / dm Ni 2 of and Ni-Sn alloy of Sn, the coating amount of Ni-Mn alloy 15 ~ 450μg / dm Ni 2's and 5 ~ 200μg / dm Mn 2 constitutes of a coating amount of 20 ~ 440μg / dm 2 of Ni and 5 It is composed of a Ni-Cr alloy composed of Cr of 110 μg/dm 2 .
又,當中間層以由Cu、與Zn及Ni之任一種或兩種構成之Cu合金所構成時,較佳為該中間層由Zn之被覆量為15~750μg/dm2 之Cu-Zn合金、Ni被覆量為15~440μg/dm2 之Cu-Ni合金、或者Ni被覆量為15~1000μg/dm2 且Zn被覆量為5~750μg/dm2 之Cu-Ni-Zn合金所構成。Further, when the intermediate layer consisting of Cu, Zn and Ni, when any one of the one or Cu alloy composed of two kinds of configuration, the intermediate layer is preferred that the coating amount of Zn is 15 ~ 750μg / dm 2 of the Cu-Zn alloy , Ni coating amount of 15 ~ 440μg / dm Cu-Ni alloy of 2 or Ni coating amount of 15 ~ 1000μg / dm 2 and Zn coating amount of 5 ~ 750μg / dm Cu-Ni -Zn alloy composed of 2.
(3)利用穿透式電子顯微鏡(TEM)之觀察(3) Observation using a transmission electron microscope (TEM)
當利用穿透式電子顯微鏡觀察本發明之被覆層之剖面時,為如下被覆層:最大厚度為0.5nm~12nm,較佳為1.0~2.5nm,最小厚度為最大厚度之80%以上,較佳為85%以上,且參差不齊非常少。其原因在於,若被覆層厚度未達0.5nm,則於耐熱測試、耐濕測試中,剝離強度之劣化大,若厚度超過12nm,則蝕刻性會下降。於厚度之最小值為最大值之80%以上之情形時,該被覆層之厚度非常穩定,於耐熱測試後亦幾乎不發生變化。利用TEM進行觀察時,不易發現被覆層中之中間層及Cr層之明確的邊界,看起來為單層(參照圖1)。根據本發明人之研究結果,認為於TEM觀察中所發現之被覆層係以Cr為主體之層,亦認為中間層存在於該銅箔基材側。因此,本發明中,將TEM觀察時之被覆層的厚度定義為看起來為單層之被覆層的厚度。然而,根據觀察部位之不同,亦存在被覆層之邊界不明確之處,將此種部位自厚度之測定部位中排除。When the cross section of the coating layer of the present invention is observed by a transmission electron microscope, it is a coating layer having a maximum thickness of 0.5 nm to 12 nm, preferably 1.0 to 2.5 nm, and a minimum thickness of 80% or more of the maximum thickness. It is more than 85%, and there are very few differences. The reason for this is that if the thickness of the coating layer is less than 0.5 nm, the deterioration of the peel strength is large in the heat resistance test and the moisture resistance test, and when the thickness exceeds 12 nm, the etching property is lowered. When the minimum thickness is 80% or more of the maximum value, the thickness of the coating layer is very stable, and hardly changes after the heat resistance test. When observed by TEM, it is difficult to find a clear boundary between the intermediate layer and the Cr layer in the coating layer, and it appears as a single layer (see Fig. 1). According to the findings of the present inventors, it is considered that the coating layer found in the TEM observation is a layer mainly composed of Cr, and the intermediate layer is also considered to exist on the side of the copper foil substrate. Therefore, in the present invention, the thickness of the coating layer at the time of TEM observation is defined as the thickness of the coating layer which appears to be a single layer. However, depending on the observation site, there is also a ambiguity in the boundary of the coating layer, and such a portion is excluded from the measurement portion of the thickness.
認為根據本發明之構成,由於可抑制Cu擴散,因此具有穩定之厚度。本發明之銅箔係與聚醯亞胺膜接著,經過耐熱測試(於溫度150℃且空氣環境氣氛下之高溫環境下放置168小時)後剝離樹脂之後,被覆層之厚度亦幾乎不發生變化,最大厚度為0.5~12nm,最小厚度亦可維持最大厚度之80%。It is considered that the constitution according to the present invention has a stable thickness since it can suppress the diffusion of Cu. The copper foil of the present invention and the polyimide film are then subjected to a heat resistance test (after standing at a temperature of 150 ° C and a high temperature environment under an air atmosphere for 168 hours), and then the thickness of the coating layer hardly changes after the resin is peeled off. The maximum thickness is 0.5 to 12 nm, and the minimum thickness can also maintain 80% of the maximum thickness.
(4)被覆層表面之氧化狀態(4) Oxidation state of the surface of the coating layer
首先,就提高接著強度而言,理想的是內部之銅未擴散至被覆層最表面(自表面起0~1.0nm之範圍)。因此,本發明之印刷配線板用銅箔中,較佳為若將根據利用XPS之自表面起之深度方向分析所得的深度方向(x:單位nm)之金屬鉻之原子濃度(%)設為f1 (x),將氧化物鉻之原子濃度(%)設為f2 (x),將全體鉻之原子濃度(%)設為f(x)(f(x)=f1 (x)+f2 (x)),將鎳之原子濃度(%)設為g(x),將銅之原子濃度(%)設為h(x),將氧之原子濃度(%)設為i(x),將碳之原子濃度(%)設為j(x),將其他金屬之原子濃度之總和設為k(x),則於區間[0,1.0]內,∫h(x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為10%以下。First, in terms of improving the adhesion strength, it is desirable that the internal copper does not diffuse to the outermost surface of the coating layer (from 0 to 1.0 nm from the surface). Therefore, in the copper foil for a printed wiring board of the present invention, it is preferable to set the atomic concentration (%) of the metal chromium in the depth direction (x: unit nm) obtained by the depth direction analysis from the surface by XPS. f 1 (x), the atomic concentration (%) of the oxide chromium is set to f 2 (x), and the atomic concentration (%) of the entire chromium is set to f(x)(f(x)=f 1 (x) +f 2 (x)), the atomic concentration (%) of nickel is set to g(x), the atomic concentration (%) of copper is h(x), and the atomic concentration (%) of oxygen is set to i ( x), if the atomic concentration (%) of carbon is set to j(x) and the sum of the atomic concentrations of other metals is k(x), then within the interval [0, 1.0], ∫h(x)dx/ (∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx) is 10% or less.
又,較佳為當進行完相當聚醯亞胺硬化之熱處理時,若將根據利用XPS之自表面起之深度方向分析所得的深度方向(x:單位nm)之金屬鉻之原子濃度(%)設為f1 (x),將氧化物鉻之原子濃度(%)設為f2 (x),將全體鉻之原子濃度(%)設為f(x)(f(x)=f1 (x)+f2 (x)),將鎳之原子濃度(%)設為g(x),將銅之原子濃度(%)設為h(x),將氧之原子濃度(%)設為i(x),將碳之原子濃度(%)設為j(x),將其他金屬之原子濃度之總和設為k(x),則於區間[0,1.0]內,∫h(x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為10%以下。Further, it is preferable that the atomic concentration (%) of the metal chromium in the depth direction (x: unit nm) obtained by analyzing the depth direction from the surface by XPS is performed when the heat treatment for the hardening of the polyimine is performed. Let f 1 (x), set the atomic concentration (%) of the oxide chromium to f 2 (x), and set the atomic concentration (%) of the entire chromium to f(x)(f(x)=f 1 ( x)+f 2 (x)), the atomic concentration (%) of nickel is set to g(x), the atomic concentration (%) of copper is h(x), and the atomic concentration (%) of oxygen is set to x. i(x), where the atomic concentration (%) of carbon is set to j(x), and the sum of the atomic concentrations of other metals is k(x), then within the interval [0, 1.0], ∫h(x) Dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx) is 10% or less.
又,理想的是,當對於經由被覆層而形成絕緣基板之印刷配線板用銅箔,分析將絕緣基板自被覆層剝離後之被覆層的表面時,若將根據利用XPS之自表面起之深度方向分析所得的深度方向(x:單位nm)之金屬鉻之原子濃度(%)設為f1 (x),將氧化物鉻之原子濃度(%)設為f2 (x),將全體鉻之原子濃度(%)設為f(x)(f(x)=f1 (x)+f2 (x)),將鎳之原子濃度(%)設為g(x),將銅之原子濃度(%)設為h(x),將氧之原子濃度(%)設為i(x),將碳之原子濃度(%)設為j(x),將其他金屬之原子濃度之總和設為k(x),將金屬鉻之濃度最大之自表層起之距離設為F,則於區間[0,F]內,∫h(x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為10%以下。Further, when the surface of the coating layer from which the insulating substrate is peeled off from the coating layer is analyzed for the copper foil for a printed wiring board in which the insulating substrate is formed through the coating layer, the depth from the surface by the XPS is preferably used. The atomic concentration (%) of the metal chromium in the depth direction (x: unit nm) obtained by the direction analysis is f 1 (x), and the atomic concentration (%) of the oxide chromium is set to f 2 (x), and the entire chromium is obtained. The atomic concentration (%) is f(x)(f(x)=f 1 (x)+f 2 (x)), and the atomic concentration (%) of nickel is set to g(x), and the atom of copper is used. The concentration (%) is set to h(x), the atomic concentration (%) of oxygen is set to i(x), the atomic concentration (%) of carbon is set to j(x), and the sum of the atomic concentrations of other metals is set. For k(x), the distance from the surface layer with the largest concentration of metal chromium is set to F, then within the interval [0, F], ∫h(x)dx/(∫f(x)dx+∫g(x Dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx) is 10% or less.
又,於被覆層最表面,鉻存在金屬鉻與鉻氧化物兩者,就防止內部之銅之擴散,且確保接著力之觀點而言,雖然較佳為金屬鉻,但就獲得良好之蝕刻性而言,較佳則為鉻氧化物。因此,就同時實現蝕刻性與接著力而言,較佳為若將根據利用XPS之自表面起之深度方向分析所得的深度方向(x:單位nm)之金屬鉻之原子濃度(%)設為f1 (x),將氧化物鉻之原子濃度(%)設為f2 (x),將全體鉻之原子濃度(%)設為f(x)(f(x)=f1 (x)+f2 (x)),將鎳之原子濃度(%)設為g(x),將銅之原子濃度(%)設為h(x),將氧之原子濃度(%)設為i(x),將碳之原子濃度(%)設為j(x),將其他金屬之原子濃度之總和設為k(x),則於區間[0,1.0]內,∫f2 (x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為20%以上,於區間[1.0,2.5]內,滿足0.1≦∫f1 (x)dx/∫f2 (x)dx≦1.0。Further, on the outermost surface of the coating layer, chromium is present in both the metal chromium and the chromium oxide, thereby preventing the diffusion of copper inside, and from the viewpoint of ensuring the adhesion, although it is preferably metallic chromium, good etching property is obtained. In terms of, it is preferably chromium oxide. Therefore, in order to achieve both the etching property and the adhesion force, it is preferable to set the atomic concentration (%) of the metal chromium in the depth direction (x: unit nm) obtained by the depth direction analysis from the surface by XPS. f 1 (x), the atomic concentration (%) of the oxide chromium is set to f 2 (x), and the atomic concentration (%) of the entire chromium is set to f(x)(f(x)=f 1 (x) +f 2 (x)), the atomic concentration (%) of nickel is set to g(x), the atomic concentration (%) of copper is h(x), and the atomic concentration (%) of oxygen is set to i ( x), if the atomic concentration (%) of carbon is set to j(x) and the sum of the atomic concentrations of other metals is k(x), then within the interval [0, 1.0], ∫f 2 (x)dx /(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx) is 20% or more in the interval [1.0, 2.5 Within the range, 0.1≦∫f 1 (x)dx/∫f 2 (x)dx≦1.0 is satisfied.
又,較佳為,當進行完相當聚醯亞胺硬化之熱處理時,若將根據利用XPS之自表面起之深度方向分析所得的深度方向(x:單位nm)之金屬鉻之原子濃度(%)設為f1 (x),將氧化物鉻之原子濃度(%)設為f2 (x),將全體鉻之原子濃度(%)設為f(x)(f(x)=f1 (x)+f2 (x)),將鎳之原子濃度(%)設為g(x),將銅之原子濃度(%)設為h(x),將氧之原子濃度(%)設為i(x),將碳之原子濃度(%)設為j(x),將其他金屬之原子濃度之總和設為k(x),則於區間[0,1.0]內,∫f2 (x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為20%以上,於區間[1.0,2.5]內,滿足0.1≦∫f1 (x)dx/∫f2 (x)dx≦1.0。Further, it is preferable that when the heat treatment for hardening of the polyimine is performed, the atomic concentration of the metal chromium in the depth direction (x: unit nm) obtained by analyzing the depth direction from the surface by XPS (%) ) is f 1 (x), the atomic concentration (%) of the oxide chromium is f 2 (x), and the atomic concentration (%) of the entire chromium is f(x) (f(x)=f 1 (x)+f 2 (x)), the atomic concentration (%) of nickel is set to g(x), the atomic concentration (%) of copper is h(x), and the atomic concentration (%) of oxygen is set. For i(x), the atomic concentration (%) of carbon is set to j(x), and the sum of the atomic concentrations of other metals is k(x), then within the interval [0, 1.0], ∫f 2 ( x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx) is 20% or more in the interval [ Within 1.0, 2.5], 0.1≦∫f 1 (x)dx/∫f 2 (x)dx≦1.0 is satisfied.
又,理想的是,若為經進行相當聚醯亞胺硬化之熱處理之印刷配線板用銅箔,且將根據利用XPS之自表面起之深度方向分析所得的深度方向(x:單位nm)之金屬鉻之原子濃度(%)設為f1 (x),將氧化物鉻之原子濃度(%)設為f2 (x),將全體鉻之原子濃度(%)設為f(x)(f(x)=f1 (x)+f2 (x)),將鎳之原子濃度(%)設為g(x),將銅之原子濃度(%)設為h(x),將氧之原子濃度(%)設為i(x),將碳之原子濃度(%)設為j(x),將其他金屬之原子濃度之總和設為k(x),則於區間[0,1.0]內,∫f2 (x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx)為20%以上,於區間[1.0,2.5]內,滿足0.1≦∫f1 (x)dx/∫f2 (x)dx≦1.0。Further, it is preferably a copper foil for a printed wiring board which is subjected to a heat treatment in which the polyimide is hardened, and a depth direction (x: unit nm) obtained by analysis in the depth direction from the surface by XPS is used. The atomic concentration (%) of the metal chromium is set to f 1 (x), the atomic concentration (%) of the chromium oxide is f 2 (x), and the atomic concentration (%) of the entire chromium is set to f(x) ( f(x)=f 1 (x)+f 2 (x)), the atomic concentration (%) of nickel is set to g(x), and the atomic concentration (%) of copper is h(x), and oxygen is used. The atomic concentration (%) is i(x), the atomic concentration (%) of carbon is set to j(x), and the sum of the atomic concentrations of other metals is k(x), and the interval is [0, 1.0). ], ∫f 2 (x)dx/(∫f(x)dx+∫g(x)dx+∫h(x)dx+∫i(x)dx+∫j(x)dx+∫k(x)dx) is 20% or more, within the interval [1.0, 2.5], 0.1≦∫f 1 (x)dx/∫f 2 (x)dx≦1.0 is satisfied.
鉻濃度及氧濃度分別係根據由利用XPS之自表面起之深度方向分析所得的Cr2p軌道及O1s軌道之波峰強度所算出。又,深度方向(x:單位nm)之距離係根據SiO2 換算之濺鍍速率所算出之距離。鉻濃度為氧化物鉻濃度與金屬鉻濃度之合計值,可分離為氧化物鉻濃度與金屬鉻濃度而加以分析。The chromium concentration and the oxygen concentration were respectively calculated from the peak intensities of the Cr2p orbitals and the O1s orbits obtained by analyzing the depth direction from the surface by XPS. Further, the distance in the depth direction (x: unit nm) is the distance calculated from the sputtering rate in terms of SiO 2 . The chromium concentration is the sum of the oxide chromium concentration and the metal chromium concentration, and can be separated into an oxide chromium concentration and a metal chromium concentration for analysis.
(本發明之銅箔之製法)(Preparation method of copper foil of the present invention)
本發明之印刷配線板用銅箔,可藉由濺鍍法來形成。即,可藉由濺鍍法,以厚度為0.25~5.0nm(較佳為0.3~4.0nm,更佳為0.5~3.0nm之中間層)及厚度為0.25~2.5nm(較佳為0.4~2.0nm,更佳為0.5~1.0nm)之Cr層依序被覆銅箔基材表面之至少一部分,藉此來加以製造。若以電鍍積層此種極薄之被膜,則厚度將會產生不均,於耐熱、耐濕測試後剝離強度易下降。The copper foil for a printed wiring board of the present invention can be formed by a sputtering method. That is, the thickness can be 0.25 to 5.0 nm (preferably 0.3 to 4.0 nm, more preferably 0.5 to 3.0 nm in the intermediate layer) and the thickness is 0.25 to 2.5 nm (preferably 0.4 to 2.0) by sputtering. The Cr layer of nm, more preferably 0.5 to 1.0 nm, is sequentially coated with at least a part of the surface of the copper foil substrate, thereby producing. If such an extremely thin film is laminated by plating, the thickness will be uneven, and the peel strength will be easily lowered after the heat resistance and moisture resistance test.
此處所謂厚度,並非上述藉由XPS或TEM所決定之厚度,而係根據濺鍍之成膜速度所導出之厚度。某種濺鍍條件下之成膜速度係進行0.1μm(100nm)以上之濺鍍,可根據濺鍍時間與濺鍍厚度之關係進行計測。計測完該濺鍍條件下之成膜速度,則根據所期望之厚度來設定濺鍍時間。再者,濺鍍亦可連續或分批次進行,且能夠以本發明規定之厚度均勻積層被覆層。濺鍍法,可列舉直流磁控濺鍍法。The thickness herein is not the thickness determined by XPS or TEM described above, but is the thickness derived from the film formation rate of sputtering. The film formation rate under certain sputtering conditions is 0.1 μm (100 nm) or more, which can be measured according to the relationship between the sputtering time and the sputtering thickness. When the film formation speed under the sputtering condition is measured, the sputtering time is set according to the desired thickness. Further, the sputtering can be carried out continuously or in batches, and the coating layer can be uniformly laminated with the thickness specified in the present invention. The sputtering method can be exemplified by a DC magnetron sputtering method.
(印刷配線板之製造)(Manufacture of printed wiring board)
可使用本發明之銅箔,依據常用方法製造印刷配線板(PWB)。以下,表示印刷配線板之製造例。A printed wiring board (PWB) can be manufactured according to a usual method using the copper foil of the present invention. Hereinafter, a manufacturing example of a printed wiring board will be described.
首先,貼合銅箔與絕緣基板來製造覆銅積層板。積層有銅箔之絕緣基板,只要具有可適用於印刷配線板之特性者,則並無特別限制,例如用於剛性PWB時,可使用紙基材酚樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布-紙複合基材環氧樹脂、玻璃布-玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂等,用於FPC時,可使用聚酯膜或聚醯亞胺膜等。First, a copper clad laminate is produced by laminating a copper foil and an insulating substrate. The insulating substrate in which the copper foil is laminated is not particularly limited as long as it has characteristics suitable for the printed wiring board. For example, when used for a rigid PWB, a paper substrate phenol resin, a paper substrate epoxy resin, or a synthetic fiber can be used. Cloth substrate epoxy resin, glass cloth-paper composite substrate epoxy resin, glass cloth-glass non-woven composite substrate epoxy resin and glass cloth substrate epoxy resin, etc., when used in FPC, polyester film or Polyimine film and the like.
關於貼合之方法,於剛性PWB用之情形時,準備於玻璃布等基材中含浸有樹脂,且使樹脂硬化至半硬化狀態為止之預浸料。可藉由將預浸料與銅箔之具有被覆層之面疊合進行加熱加壓來進行。In the case of the rigid PWB, the bonding method is prepared by impregnating a substrate such as a glass cloth with a resin and curing the resin to a semi-hardened state. This can be carried out by heating and pressurizing the prepreg and the surface of the copper foil having the coating layer.
於可撓性印刷配線板(FPC)用之情形時,可使用環氧系或丙烯酸系之接著劑,將聚醯亞胺膜或聚酯膜與銅箔之具有被覆層之面接著(3層結構)。又,不使用接著劑之方法(2層結構),可列舉:藉由將作為聚醯亞胺之前驅物之聚醯亞胺清漆(聚醯胺酸清漆)塗佈於銅箔之具有被覆層之面,並進行加熱而醯亞胺化的澆鑄法;或於聚醯亞胺膜上塗佈熱塑性之聚醯亞胺,於其上疊合銅箔之具有被覆層之面,並進行加熱加壓的層壓法。澆鑄法中,於塗佈聚醯亞胺清漆之前預先塗佈熱塑性聚醯亞胺等增黏塗材亦有效。In the case of a flexible printed wiring board (FPC), an epoxy-based or acrylic-based adhesive may be used to bond the polyimide film or the polyester film to the surface of the copper foil having the coating layer (3 layers). structure). Moreover, the method (two-layer structure) which does not use an adhesive agent is the coating layer which apply|coated on the copper foil by the poly-imine varnish (poly amide varnish) which is a precursor of a polyimine. a surface, and a heating method to iodize the casting method; or coating a thermoplastic polyimide on the polyimide film, superimposing the surface of the copper foil with the coating layer, and heating Pressure lamination method. In the casting method, it is also effective to apply a tackifying coating material such as a thermoplastic polyimide after precoating the polyimide varnish.
本發明之銅箔之效果,會在採用澆鑄法製造FPC時顯著表現出來。即,當欲不使用接著劑來貼合銅箔與樹脂時,特別要求銅箔與樹脂之接著性,本發明之銅箔之與樹脂、特別是聚醯亞胺之接著性優異,因此可以說適合於利用澆鑄法之覆銅積層板之製造。The effect of the copper foil of the present invention is remarkably exhibited when the FPC is produced by a casting method. In other words, when the copper foil and the resin are to be bonded together without using an adhesive, the adhesion between the copper foil and the resin is particularly required, and the copper foil of the present invention is excellent in adhesion to the resin, particularly polyimine, so that it can be said that It is suitable for the manufacture of copper-clad laminates using the casting method.
本發明之覆銅積層板可用於各種之印刷配線板(PWB),並無特別限制,例如就導體圖案之層數之觀點而言,可適用於單面PWB、兩面PWB、多層PWB(3層以上),就絕緣基板材料之種類之觀點而言,可適用於剛性PWB、可撓性PWB(FPC)、剛性-可撓性PWB。The copper clad laminate of the present invention can be used for various printed wiring boards (PWB), and is not particularly limited. For example, from the viewpoint of the number of layers of the conductor pattern, it can be applied to one-sided PWB, two-sided PWB, and multi-layer PWB (three layers). The above) is applicable to rigid PWB, flexible PWB (FPC), and rigid-flexible PWB from the viewpoint of the type of the insulating substrate material.
由覆銅積層板製造印刷配線板之步驟採用從業者所周知之方法即可,例如可將蝕刻阻劑僅塗佈於覆銅積層板之銅箔面之作為導體圖案的必要部分,將蝕刻液噴射於銅箔面,藉此除去多餘銅箔而形成導體圖案,然後剝離、除去蝕刻阻劑而露出導體圖案。The step of manufacturing the printed wiring board from the copper-clad laminate may be carried out by a method known to a person skilled in the art. For example, the etching resist may be applied only to the copper foil surface of the copper-clad laminate as a necessary part of the conductor pattern, and the etching liquid may be used. The copper foil surface is sprayed, whereby the excess copper foil is removed to form a conductor pattern, and then the etching resist is removed and removed to expose the conductor pattern.
[實施例][Examples]
以下,表示本發明之實施例,但該等實施例係為了更好地理解本發明所提供者,並非刻意限定本發明。The embodiments of the present invention are shown below, but are not intended to limit the present invention in order to better understand the present invention.
(例1:實施例1~44)(Example 1: Examples 1 to 44)
作為實施例1~6及8~44之銅箔基材,準備厚度18μm之壓延銅箔(日礦金屬製C1100)。壓延銅箔之表面粗糙度(Rz)為0.7μm。又,作為實施例7之銅箔基材,準備厚度18μm之無粗化處理之電解銅箔。電解銅箔之表面粗糙度(Rz)為1.5μm。As the copper foil substrates of Examples 1 to 6 and 8 to 44, a rolled copper foil (C1100 manufactured by Nippon Mining Co., Ltd.) having a thickness of 18 μm was prepared. The surface roughness (Rz) of the rolled copper foil was 0.7 μm. Further, as the copper foil substrate of Example 7, an electrolytic copper foil having a thickness of 18 μm without roughening treatment was prepared. The surface roughness (Rz) of the electrolytic copper foil was 1.5 μm.
用於濺鍍之各種單體(a~e)使用純度為3N者。又,以下述順序製作各種合金(f~l)。首先,於電解銅或鎳中分別添加表1(濺鍍靶材之合金成分[質量%])所示之組成之元素,於高頻熔解爐中鑄造錠,以600~900℃對其實施熱壓延。進而,以500~850℃均質化退火3小時後,除去表層之氧化層,使用作為濺鍍用之靶材。The various monomers (a to e) used for sputtering have a purity of 3N. Further, various alloys (f to 1) were produced in the following order. First, an element of the composition shown in Table 1 (alloy component [% by mass] of the sputtering target) is added to electrolytic copper or nickel, and the ingot is cast in a high-frequency melting furnace, and heat is applied at 600 to 900 ° C. Calendering. Further, after homogenization annealing at 500 to 850 ° C for 3 hours, the oxide layer of the surface layer was removed, and a target for sputtering was used.
對於該銅箔之單面,以下述條件利用逆向濺鍍,預先除去附著於銅箔基材表面之較薄之氧化膜,藉由對a~l及Cr單層之靶材進行濺鍍,而依序形成中間層及Cr層。被覆層之厚度係藉由調整成膜時間而改變。On one side of the copper foil, reverse sputtering is used to remove a thin oxide film adhering to the surface of the copper foil substrate in advance, and the targets of the a-l and Cr single-layer are sputtered. The intermediate layer and the Cr layer are sequentially formed. The thickness of the coating layer is changed by adjusting the film formation time.
‧ 裝置:批次式濺鍍裝置(ULVAC公司,型號MNS-6000)‧ Device: Batch Sputter (ULVAC, Model MNS-6000)
‧ 極限真空度:1.0×10-5 Pa‧ Ultimate vacuum: 1.0×10 -5 Pa
‧ 濺鍍壓:0.2Pa‧ Sputtering pressure: 0.2Pa
‧ 逆向濺鍍功率:100W‧ Reverse sputtering power: 100W
‧ 靶材:‧ Target:
中間層=a~lMiddle layer = a ~ l
Cr層用=Cr(純度3N)Cr layer = Cr (purity 3N)
‧ 濺鍍功率:50W‧ Sputtering power: 50W
‧ 成膜速度:對於各靶材,以固定時間成膜約0.2μm,利用三維測定器測定厚度,算出單位時間之濺鍍速率。‧ Film formation rate: For each target, a film was formed at a fixed time of about 0.2 μm, and the thickness was measured by a three-dimensional measuring device to calculate the sputtering rate per unit time.
對於設置有被覆層之銅箔,根據以下順序接著聚醯亞胺膜。For the copper foil provided with the coating layer, the polyimide film was attached in the following order.
(1)對於7cm×7cm之銅箔,使用敷料器,以乾燥體為25μm之方式塗佈宇部興產製UVarnish-A(聚醯亞胺清漆)。(1) For a copper foil of 7 cm × 7 cm, an applicator was used, and a UVarnish-A (polyimine varnish) manufactured by Ube Industries was applied in a dry body of 25 μm.
(2)於空氣下利用乾燥機以130℃將(1)中所得之附有樹脂之銅箔乾燥30分鐘。(2) The resin-attached copper foil obtained in (1) was dried at 130 ° C for 30 minutes under air using a dryer.
(3)於氮氣流量設定為10L/min之高溫加熱爐中,以350℃之溫度醯亞胺化30分鐘。(3) The mixture was imidized at a temperature of 350 ° C for 30 minutes in a high-temperature heating furnace in which a nitrogen gas flow rate was set to 10 L/min.
又,與上述聚醯亞胺膜之接著測試不同地,作為「耐熱測試」,不於設有被覆層之銅箔上接著聚醯亞胺膜,而直接於氮氣環境下以350℃之溫度加熱2小時。Moreover, unlike the subsequent test of the above polyimide film, as the "heat resistance test", the polyimide film was not coated with the polyimide film, and the polyimide film was heated at a temperature of 350 ° C directly under a nitrogen atmosphere. 2 hours.
<附著量之測定><Measurement of adhesion amount>
將50mm×50mm之銅箔表面之被膜溶解於混合有HNO3 (2重量%)與HCl(5重量%)之溶液中,利用ICP發光分光分析裝置(SII NanoTechnology股份有限公司製,SFC-3100),對該溶液中之金屬濃度進行定量,算出每單位面積之金屬量(μg/dm2 )。再者,本發明中,將Cu合金作為靶材時之Cu與其他金屬之附著量、及將Cr合金作為靶材時之Cr與其他金屬之附著量係使用於相同條件下於Ti箔上成膜時之分析值。A film of a 50 mm × 50 mm copper foil surface was dissolved in a solution in which HNO 3 (2% by weight) and HCl (5% by weight) were mixed, and an ICP emission spectroscopic analyzer (SFC-3100, manufactured by SII NanoTechnology Co., Ltd.) was used. The metal concentration in the solution was quantified, and the amount of metal per unit area (μg/dm 2 ) was calculated. Further, in the present invention, the adhesion amount of Cu to other metals when the Cu alloy is used as a target, and the adhesion amount of Cr to other metals when the Cr alloy is used as a target are used under the same conditions on the Ti foil. Analytical value of the membrane.
<利用XPS之測定><Measurement by XPS>
將製作被覆層之縱深分析圖時之XPS之運轉條件示於以下。The operating conditions of the XPS when the depth analysis map of the coating layer is produced are shown below.
‧ 裝置:XPS測定裝置(ULVAC-PHI公司,型號5600MC)‧ Device: XPS measuring device (ULVAC-PHI, model 5600MC)
‧ 極限真空度:3.8×10-7 Pa‧ Ultimate vacuum: 3.8×10 -7 Pa
‧ X射線:單色AlKα或非單色MgKα,X射線功率為300W,檢測面積為800μmΦ ,試料與檢測器所成之角度為45°‧ X-ray: Monochromatic AlKα or non-monochromatic MgKα, X-ray power is 300W, detection area is 800μm Φ , and the angle between the sample and the detector is 45°
‧ 離子束:離子種類為Ar+ ,加速電壓為3kV,掃描面積為3mm×3mm,濺鍍速率為2.0nm/min(SiO2 換算)‧ Ion beam: ion type is Ar + , accelerating voltage is 3kV, scanning area is 3mm × 3mm, sputtering rate is 2.0nm/min (SiO 2 conversion)
‧ 於XPS之測定結果中,氧化物鉻與金屬鉻之分離係使用ULVAC公司製分析軟體Multi Pak V7.3.1來進行。‧ In the measurement results of XPS, the separation of oxide chromium and metal chromium was carried out using the analysis software Multi Pak V7.3.1 manufactured by ULVAC.
‧ 測定係對如下被膜進行分析,即,於利用濺鍍成膜後,實施較測定接著強度時之聚醯亞胺硬化條件(350℃×30分鐘)更苛刻之條件之熱處理(350℃×120分),在此狀態下繼而剝離絕緣基板後之被膜。‧ The measurement system analyzes the film, which is a heat treatment (350 ° C × 120) which is more severe than the polyethylenimine hardening condition (350 ° C × 30 minutes) when the film is formed by sputtering. In this state, the film after the insulating substrate is peeled off.
<利用TEM之測定><Measurement by TEM>
將利用TEM觀察被覆層時之TEM之測定條件示於以下。後述表中所示之厚度係對於觀察視野中所拍攝之被覆層整體之厚度,針對1個視野測定50nm間之厚度之最大值、最小值,求出任意選擇之3個視野之最大值與最小值,以百分率求出最大值及最小值相對於最大值之比例。又,表中,「耐熱測試後」之TEM觀察結果係根據上述順序,於測試片之被覆層上接著聚醯亞胺膜之後,將測試片置於下述高溫環境下,依照90°剝離法(JIS C 6471 8.1),自所得之測試片剝離聚醯亞胺膜後的TEM像。圖1中,例示地表示實施例17之利用TEM之成膜後之觀察照片。根據圖1無法確認中間層。其原因在於,該部分為銅合金層而無法與母材之銅箔加以區別。圖1中所確認者推測為Cr層。本發明中,測量僅與母材之邊界明確之層的厚度。The measurement conditions of the TEM when the coating layer was observed by TEM are shown below. The thickness shown in the table below is the maximum and minimum values of the thickness between 50 nm for one field of view for the thickness of the entire coating layer captured in the observation field, and the maximum and minimum values of the arbitrarily selected three fields of view are obtained. The value is calculated as a percentage of the maximum and minimum values relative to the maximum value. In addition, in the table, the TEM observation result after "heat-resistance test" is based on the above procedure, and after the polyimide film is coated on the coating layer of the test piece, the test piece is placed in the following high-temperature environment, according to the 90° peeling method. (JIS C 6471 8.1), a TEM image after peeling off the polyimide film from the obtained test piece. In Fig. 1, an observation photograph of the film of Example 17 after film formation by TEM is exemplarily shown. The intermediate layer could not be confirmed according to Fig. 1. The reason is that this portion is a copper alloy layer and cannot be distinguished from the copper foil of the base material. The person confirmed in Fig. 1 is presumed to be a Cr layer. In the present invention, the thickness of the layer which is only defined by the boundary of the base material is measured.
‧ 裝置:TEM(日立製作所公司,型號H9000NAR)‧ Device: TEM (Hitachi Manufacturing Co., model H9000NAR)
‧ 加速電壓:300kV‧ Accelerating voltage: 300kV
‧ 倍率:300000倍‧ Magnification: 300,000 times
‧ 觀察視野:60nm×60nm‧ Observation field of view: 60nm × 60nm
<接著性評估><Continuity evaluation>
對於以上述方式積層有聚醯亞胺之銅箔,於剛積層後(常態)、於溫度150℃之空氣環境下之高溫環境下放置168小時後(耐熱性)、及於溫度40℃且相對濕度95%之空氣環境下之高濕環境下放置96小時後(耐濕性)3種條件下測定剝離強度。剝離強度係依據90°剝離法(JIS C 6471 8.1)而測定。The copper foil laminated with the polyimide in the above manner is placed in a high-temperature environment immediately after laminating (normal) in an air atmosphere at a temperature of 150 ° C for 168 hours (heat resistance), and at a temperature of 40 ° C and relative The peel strength was measured under the conditions of 96 hours (moisture resistance) in a high-humidity environment under an air atmosphere of 95% humidity. The peel strength was measured in accordance with a 90° peeling method (JIS C 6471 8.1).
<蝕刻性評估><etchability evaluation>
於以上述方式製作之銅箔之該被覆層上貼附白膠帶,浸漬於蝕刻液(氯化銅二水合物、氯化銨、氨水、液溫50℃)中7分鐘。其後,利用ICP發光分光分析裝置,對附著於膠帶上之蝕刻殘渣之金屬成分進行定量,以下述基準進行評估。A white tape was attached to the coating layer of the copper foil produced as described above, and immersed in an etching liquid (copper chloride dihydrate, ammonium chloride, ammonia water, liquid temperature: 50 ° C) for 7 minutes. Thereafter, the metal component of the etching residue adhering to the tape was quantified by an ICP emission spectroscopic analyzer, and evaluated based on the following criteria.
×:蝕刻殘渣為140μg/dm2 以上×: The etching residue is 140 μg/dm 2 or more
△:蝕刻殘渣為70μg/dm2 以上、未達140μg/dm2 △: etching residue is 70μg / dm 2 or more, less than 140μg / dm 2
○:蝕刻殘渣未達70μg/dm2 ○: The etching residue is less than 70 μg/dm 2
(例2:比較例1~28)(Example 2: Comparative Examples 1 to 28)
於例1中使用之壓延銅箔基材之單面,改變濺鍍時間而形成後述表之厚度之被膜。對於設置有被覆層之銅箔,根據與例1相同之順序接著聚醯亞胺膜。On the single side of the rolled copper foil substrate used in Example 1, the thickness of the film described later was changed by changing the sputtering time. For the copper foil provided with the coating layer, the polyimide film was bonded in the same order as in Example 1.
(例3:比較例29)(Example 3: Comparative Example 29)
對例1中使用之壓延銅箔基材之單面,分別於以下條件下實施日本特開2005-344174號公報中所揭示之鍍Ni-Zn處理、鉻酸處理及矽烷偶合劑處理。For the one surface of the rolled copper foil substrate used in Example 1, the Ni-Zn treatment, the chromic acid treatment, and the decane coupling agent treatment disclosed in JP-A-2005-344174 were carried out under the following conditions.
[鍍Ni-Zn處理][Ni-Zn plating]
‧ 硫酸鎳 1.5g/l(Ni換算)‧ Nickel sulfate 1.5g/l (in terms of Ni)
‧ 焦磷酸鋅 0.5g/l(Zn換算)‧ zinc pyrophosphate 0.5g/l (converted in Zn)
‧ 焦磷酸鉀 200g/l‧ Potassium pyrophosphate 200g/l
‧ pH值 9‧ pH 9
‧ 浴溫 40℃‧ Bath temperature 40 ° C
‧ 電流密度 5A/dm2 ‧ Current density 5A/dm 2
[鉻酸處理][chromic acid treatment]
‧ CrO3 1g/l‧ CrO 3 1g/l
‧ 浴溫 35℃‧ Bath temperature 35 ° C
‧ 電流密度 8A/dm2 ‧ Current density 8A/dm 2
[矽烷偶合劑處理][矽 偶 coupling agent treatment]
‧ γ-胺基丙基三乙氧基矽烷 塗佈5g/l之溶液‧ γ-aminopropyl triethoxy decane coated with 5g / l solution
(例4:比較例30)(Example 4: Comparative Example 30)
對例1中所使用之壓延銅箔基材之單面,分別於以下條件下實施日本特開2007-007937號公報所揭示之鍍Ni處理、鉻酸處理及矽烷偶合劑處理。On one side of the rolled copper foil substrate used in Example 1, the Ni plating treatment, the chromic acid treatment, and the decane coupling agent treatment disclosed in JP-A-2007-007937 were carried out under the following conditions.
[鍍Ni處理][Ni plating treatment]
‧ NiSO4 /7H2 O 300g/l(以Ni2+ 計)‧ NiSO 4 /7H 2 O 300g/l (based on Ni 2+ )
‧ H3 BO3 40g/l‧ H 3 BO 3 40g/l
‧ 浴溫 25℃‧ Bath temperature 25 ° C
‧ 電流密度 1.0A/dm2 ‧ Current density 1.0A/dm 2
[鉻酸處理][chromic acid treatment]
‧ CrO3 1g/l‧ CrO 3 1g/l
‧ 浴溫 25℃‧ Bath temperature 25 ° C
‧ 電流密度 2.0A/dm2 ‧ Current density 2.0A/dm 2
[矽烷偶合劑處理][矽 偶 coupling agent treatment]
‧ 3-胺基丙基三乙氧基矽烷 塗佈0.3%之溶液‧ 3-Aminopropyltriethoxydecane coated with 0.3% solution
將例1~4之各測定結果示於表2~7。The measurement results of Examples 1 to 4 are shown in Tables 2 to 7.
實施例1~3、6~44均具有良好之剝離強度及蝕刻性。又,實施例4及5雖蝕刻性較上述實施例稍差,但剝離強度良好。Each of Examples 1 to 3 and 6 to 44 had good peel strength and etching property. Further, in Examples 4 and 5, although the etching property was slightly inferior to that of the above examples, the peeling strength was good.
又,圖2中,表示實施例17之銅箔(聚醯亞胺清漆硬化相當之熱處理後)之利用XPS所得的縱深分析圖。於Cr層內,於表層存在氧化物Cr層,於其正下方存在金屬Cr層。因氧化物Cr及金屬Cr之濃度最大之自表層起之距離彼此不同,因此可以說兩者分離為2層。於自表層起1nm之範圍內,與電鍍之情形不同,氧化物Cr之原子濃度比超過20%。於其他實施例中,於表層附近,氧化物Cr之原子濃度比亦超過20%。又,於任一實施例中,均未確認Cu原子擴散至表層。推測其係於Cr層之正下方設置有用以防止Cu原子之擴散之中間層的效果。Further, Fig. 2 shows a depth analysis chart obtained by XPS of the copper foil of Example 17 (after heat treatment in which the polyimide varnish is cured). In the Cr layer, an oxide Cr layer is present on the surface layer, and a metal Cr layer is present directly under the layer. Since the concentrations of the oxide Cr and the metal Cr are the largest from the surface layer, it can be said that the two are separated into two layers. In the range of 1 nm from the surface layer, unlike the case of electroplating, the atomic concentration ratio of the oxide Cr exceeds 20%. In other embodiments, the atomic concentration ratio of oxide Cr is also more than 20% in the vicinity of the surface layer. Further, in any of the examples, it was not confirmed that Cu atoms diffused to the surface layer. It is presumed that the effect is to provide an intermediate layer for preventing diffusion of Cu atoms directly under the Cr layer.
比較例1,係Cr之被覆量小於18μg/dm2 ,剝離強度不良。In Comparative Example 1, the coating amount of Cr was less than 18 μg/dm 2 , and the peel strength was poor.
比較例2,係Cr之被覆量超過180μg/dm2 ,蝕刻性不良。In Comparative Example 2, the coating amount of Cr was more than 180 μg/dm 2 , and the etching property was poor.
比較例3~28,係Cr之被覆量雖處於18~180μg/dm2 之範圍內,但由於用於中間層之各種元素之被覆量,導致各種剝離強度或蝕刻性不良。In Comparative Examples 3 to 28, the coating amount of Cr was in the range of 18 to 180 μg/dm 2 , but various coating strengths and etching properties were caused by the coating amount of various elements used for the intermediate layer.
比較例29及30各自中,耐熱、耐濕剝離強度不良。根據圖3及4所示之比較例20及30之銅箔之利用XPS所得的縱深分析圖,推測其原因在於自表層起0~1nm之範圍內之3價之Cr量較少。In each of Comparative Examples 29 and 30, heat resistance and wet peeling strength were poor. According to the depth analysis chart obtained by XPS of the copper foils of Comparative Examples 20 and 30 shown in Figs. 3 and 4, it is presumed that the reason is that the amount of trivalent Cr in the range of 0 to 1 nm from the surface layer is small.
圖1,係實施例1之銅箔(成膜後)之TEM照片(剖面)。Fig. 1 is a TEM photograph (cross section) of a copper foil (after film formation) of Example 1.
圖2,係實施例17之銅箔(相當聚醯亞胺清漆硬化之熱處理後)之利用XPS所得的縱深分析圖。Fig. 2 is a depth analysis chart obtained by XPS of the copper foil of Example 17 (after heat treatment of the polyimine varnish hardening).
圖3,係比較例29之銅箔(電鍍後)之利用XPS所得的縱深分析圖。Fig. 3 is a depth analysis chart obtained by XPS of the copper foil of Comparative Example 29 (after plating).
圖4,係比較例30之銅箔(電鍍後)之利用XPS所得的縱深分析圖。Fig. 4 is a depth analysis chart obtained by XPS of the copper foil of Comparative Example 30 (after plating).
Claims (21)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009156121 | 2009-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201114588A TW201114588A (en) | 2011-05-01 |
TWI422484B true TWI422484B (en) | 2014-01-11 |
Family
ID=43410646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099121184A TWI422484B (en) | 2009-06-30 | 2010-06-29 | Printed wiring board with copper foil |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4682271B2 (en) |
KR (1) | KR101203436B1 (en) |
CN (1) | CN102124823B (en) |
TW (1) | TWI422484B (en) |
WO (1) | WO2011001552A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI701361B (en) * | 2018-04-27 | 2020-08-11 | 日商Jx金屬股份有限公司 | Surface treatment copper foil, copper clad laminate and printed wiring board |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5672764B2 (en) * | 2010-05-13 | 2015-02-18 | 大日本印刷株式会社 | Wiring circuit laminate, suspension substrate using the same, and manufacturing method thereof |
JP5808114B2 (en) * | 2011-02-16 | 2015-11-10 | Jx日鉱日石金属株式会社 | Copper foil for printed wiring board, laminate and printed wiring board |
JP5346054B2 (en) * | 2011-03-18 | 2013-11-20 | Jx日鉱日石金属株式会社 | Copper foil for printed wiring board and laminated board using the same |
JP6111017B2 (en) * | 2012-02-03 | 2017-04-05 | Jx金属株式会社 | Copper foil for printed wiring board, laminate using the same, printed wiring board, and electronic component |
JP5854872B2 (en) * | 2012-02-15 | 2016-02-09 | Jx日鉱日石金属株式会社 | Copper foil with carrier, method for producing copper foil with carrier, laminate and method for producing printed wiring board |
JP5228130B1 (en) * | 2012-08-08 | 2013-07-03 | Jx日鉱日石金属株式会社 | Copper foil with carrier |
JP5364838B1 (en) * | 2012-11-30 | 2013-12-11 | Jx日鉱日石金属株式会社 | Copper foil with carrier |
JP5997080B2 (en) * | 2013-03-05 | 2016-09-21 | Jx金属株式会社 | Copper foil with carrier, method for producing copper foil with carrier, printed wiring board, printed circuit board, copper-clad laminate, and method for producing printed wiring board |
JP6357336B2 (en) * | 2014-03-31 | 2018-07-11 | 三井金属鉱業株式会社 | Electrolytic copper foil, electrolytic copper foil with carrier foil and printed wiring board |
JP6854114B2 (en) * | 2016-01-04 | 2021-04-07 | Jx金属株式会社 | Surface-treated copper foil |
JP6135815B1 (en) * | 2016-09-29 | 2017-05-31 | 東洋インキScホールディングス株式会社 | Printed wiring boards and electronic devices |
CN114481245B (en) * | 2022-02-24 | 2022-09-16 | 广东盈华电子科技有限公司 | Surface treatment process of reverse electrolytic copper foil for flexible copper clad laminate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006508837A (en) * | 2002-12-05 | 2006-03-16 | オリン コーポレイション | Improved peel strength of copper laminate |
JP2007007937A (en) * | 2005-06-29 | 2007-01-18 | Furukawa Circuit Foil Kk | Very thin copper foil with carrier, flexible copper-clad polyimide laminate, and flexible printed wiring polyimide board |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005344174A (en) * | 2004-06-03 | 2005-12-15 | Mitsui Mining & Smelting Co Ltd | Surface-treated copper foil, flexible copper-clad laminate manufactured using the same, and film carrier tape |
JP4683640B2 (en) * | 2006-01-31 | 2011-05-18 | Jx日鉱日石金属株式会社 | Copper foil for printed wiring board and printed wiring board using the same |
JP4683646B2 (en) * | 2006-03-31 | 2011-05-18 | Jx日鉱日石金属株式会社 | Copper or copper alloy foil for printed circuit boards |
JP4677381B2 (en) * | 2006-08-08 | 2011-04-27 | Jx日鉱日石金属株式会社 | Metal materials for printed wiring boards |
-
2009
- 2009-11-26 JP JP2010526092A patent/JP4682271B2/en active Active
- 2009-11-26 WO PCT/JP2009/069959 patent/WO2011001552A1/en active Application Filing
- 2009-11-26 CN CN2009801320292A patent/CN102124823B/en not_active Expired - Fee Related
- 2009-11-26 KR KR1020117007492A patent/KR101203436B1/en not_active IP Right Cessation
-
2010
- 2010-06-29 TW TW099121184A patent/TWI422484B/en active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006508837A (en) * | 2002-12-05 | 2006-03-16 | オリン コーポレイション | Improved peel strength of copper laminate |
JP2007007937A (en) * | 2005-06-29 | 2007-01-18 | Furukawa Circuit Foil Kk | Very thin copper foil with carrier, flexible copper-clad polyimide laminate, and flexible printed wiring polyimide board |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI701361B (en) * | 2018-04-27 | 2020-08-11 | 日商Jx金屬股份有限公司 | Surface treatment copper foil, copper clad laminate and printed wiring board |
US11337315B2 (en) | 2018-04-27 | 2022-05-17 | Jx Nippon Mining & Metals Corporation | Surface treated copper foil, copper clad laminate, and printed circuit board |
US11337314B2 (en) | 2018-04-27 | 2022-05-17 | Jx Nippon Mining & Metals Corporation | Surface treated copper foil, copper clad laminate, and printed circuit board |
US11375624B2 (en) | 2018-04-27 | 2022-06-28 | Jx Nippon Mining & Metals Corporation | Surface treated copper foil, copper clad laminate, and printed circuit board |
US11382217B2 (en) | 2018-04-27 | 2022-07-05 | Jx Nippon Mining & Metals Corporation | Surface treated copper foil, copper clad laminate, and printed circuit board |
TWI776049B (en) * | 2018-04-27 | 2022-09-01 | 日商Jx金屬股份有限公司 | Surface treated copper foil, copper clad laminate and printed wiring board |
Also Published As
Publication number | Publication date |
---|---|
WO2011001552A1 (en) | 2011-01-06 |
JPWO2011001552A1 (en) | 2012-12-10 |
KR20110063804A (en) | 2011-06-14 |
TW201114588A (en) | 2011-05-01 |
KR101203436B1 (en) | 2012-11-21 |
CN102124823A (en) | 2011-07-13 |
JP4682271B2 (en) | 2011-05-11 |
CN102124823B (en) | 2013-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI422484B (en) | Printed wiring board with copper foil | |
TWI386136B (en) | Copper foil for printed wiring board | |
JP5367613B2 (en) | Copper foil for printed wiring boards | |
TWI414215B (en) | A copper foil for printed wiring board and a method for manufacturing the same, a copper clad sheet having the copper foil, and a printed wiring board | |
JP5997080B2 (en) | Copper foil with carrier, method for producing copper foil with carrier, printed wiring board, printed circuit board, copper-clad laminate, and method for producing printed wiring board | |
JP2011210994A (en) | Copper foil for printed wiring board, and laminate using the same | |
JP2010239095A (en) | Copper foil for printed wiring board | |
JP2011014647A (en) | Copper foil for printed wiring board | |
JP5345924B2 (en) | Copper foil for printed wiring boards | |
JP5506368B2 (en) | Copper foil for environmentally friendly printed wiring boards | |
JP2011014651A (en) | Copper foil for printed wiring board | |
JP2010258398A (en) | Copper foil for printed circuit board | |
JP4799710B1 (en) | Copper foil for printed wiring boards | |
JP5373453B2 (en) | Copper foil for printed wiring boards | |
JP2011009453A (en) | Copper foil for printed wiring board | |
JP2010258399A (en) | Copper foil for printed circuit board | |
TWI408049B (en) | Copper foil for printed wiring board | |
JP2011012297A (en) | Copper foil for printed circuit board | |
JP2011014653A (en) | Copper foil for printed wiring board | |
JP2011014654A (en) | Copper foil for printed wiring board | |
JP2011014642A (en) | Copper foil for printed circuit board | |
JP2011014633A (en) | Copper foil for printed wiring board |